Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb_{2}Te_{4}

Tunable Magnetism in Atomically Thin Itinerant Antiferromagnet with Room-Temperature Ferromagnetic Order

Addressing the need for modulated spin configurations is crucial, as they serve as the foundational building blocks for next-generation spintronics, particularly in atomically thin structures and at room temperature. In this work, we realize intrinsic ferromagnetism in monolayer flakes and tunable ferro-/antiferromagnetism in (Fe0.56Co0.44)5GeTe2 antiferromagnets. Remarkably, the ferromagnetic ordering (≥1 L) and antiferromagnetic ordering (≥4 L) remain discernible up to room temperature. The TC (∼310 K) of the monolayer flakes sets a record high for known exfoliated monolayer van der Waals magnets. Within the framework of A-type antiferromagnetism, a notable odd-even layer-number effect at elevated temperatures (T = 150 K) is observed. Of particular interest is the strong ferromagnetic order in even-layer flakes at low temperatures. The intricate interplay among magnetic field strength, layer number, and temperature gives rise to a diverse array of phenomena, holding promise not only for new physics but also for practical applications.

Tunable Magnetic Domains in Ferrimagnetic MnSb2Te4

Highly tunable properties make Mn(Bi,Sb)2Te4 a rich playground for exploring the interplay between band topology and magnetism: On one end, MnBi2Te4 is an antiferromagnetic topological insulator, while the magnetic structure of MnSb2Te4 (MST) can be tuned between antiferromagnetic and ferrimagnetic. Motivated to control electronic properties through real-space magnetic textures, we use magnetic force microscopy (MFM) to image the domains of ferrimagnetic MST. We find that magnetic field tunes between stripe and bubble domain morphologies, raising the possibility of topological spin textures. Moreover, we combine in situ transport with domain manipulation and imaging to both write MST device properties and directly measure the scaling of the Hall response with the domain area. This work demonstrates measurement of the local anomalous Hall response using MFM and opens the door to reconfigurable domain-based devices in the M(B,S)T family.

Layer-Number-Dependent Magnetism in the Co-Doped van der Waals Ferromagnet Fe3GaTe2

Recently, van der Waals (vdW) antiferromagnets have been proposed to be crucial for spintronics due to their favorable properties compared to ferromagnets, including robustness against magnetic perturbation and high frequencies of spin dynamics. High-performance and energy-efficient spin functionalities often depend on the current-driven manipulation and detection of spin states, highlighting the significance of two-dimensional metallic antiferromagnets, which have not been much explored due to the lack of suitable materials. Here, we report a new metallic vdW antiferromagnet obtained from the ferromagnet Fe3GaTe2 by cobalt (Co) doping. Through the layer-number-dependent Hall resistance and magnetoresistance measurements, an evident odd-even layer-number effect has been observed in its few-layered flakes, suggesting that it could host an A-type antiferromagnetic structure. This peculiar layer-number-dependent magnetism in Co-doped Fe3GaTe2 helps unravel the complex magnetic structures in such doped vdW magnets, and our finding will enrich material candidates and spin functionalities for spintronic applications.

Antisite-Defects Control of Magnetic Properties in MnSb2Te4

The intrinsic magnetic topological materials Mn(Sb/Bi)2n+2Te3n+4 have attracted extensive attention due to their topological quantum properties. Although, the Mn-Sb/Bi antisite defects have been frequently reported to exert significant influences on both magnetism and band topology, their formation mechanism and the methods to manipulate their distribution and concentration remain elusive. Here, we present MnSb2Te4 as a typical example and demonstrate that Mn-Sb antisite defects and magnetism can be tuned by controlling the crystal growth conditions. The cooling rate is identified as the primary key parameter. Magnetization and chemical analysis demonstrate that a slower cooling rate would lead to a higher Mn concentration, a higher magnetic transition temperature, and a higher saturation moment. Further analysis indicates that the Mn content at the original Mn site (MnMn, 3a site) varies more significantly with the cooling rate than the Mn content at the Sb site (MnSb, 6c site). Based on experimental observations, magnetic phase diagrams regarding MnMn and MnSb concentrations are constructed. With the assistance of first-principles calculations, it is demonstrated that the Mn-Sb mixing states primarily result from the mixing entropy and the growth kinetics. The present findings offer valuable insights into defects engineering for preparation of two-dimensional quantum materials.

Recent Progress in Two-Dimensional Material Exfoliation Technology and Enlightenment for Geological Sciences

Mechanical exfoliation technology is vital for the development of two-dimensional (2D) materials. This technology has also facilitated the verification of the performance of electronic and optical devices made from 2D materials. In this Perspective, we provide an overview of exfoliation techniques and highlight key physical properties. Additionally, we explored the chemical instability of certain 2D materials and proposed practical solutions to enhance their stability. Furthermore, we discuss the advantages of suspended 2D materials, which demonstrate improved compatibility and properties compared to nonsuspended materials. A particularly intriguing aspect of this Perspective is the exploration of the similarities between the Earth's crust and 2D materials, offering insights into the formation mechanisms of geological phenomena. In this context, 2D materials may serve as simulators for studying geological processes. We hope that this Perspective stimulates further research into exfoliation technology and the physical/chemical properties of 2D materials while providing new inspiration for earth science investigations.

2D Ferroic Materials for Nonvolatile Memory Applications

The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.

High Curie temperature ferromagnetic structures of (Sb2Te3)1-x(MnSb2Te4)x with x = 0.7-0.8

Magnetic topological materials are promising for realizing novel quantum physical phenomena. Among these, bulk Mn-rich MnSb₂Te₄ is ferromagnetic due to Mn_Sb antisites and has relatively high Curie temperatures (T_C), which is attractive for technological applications. We have previously reported the growth of materials with the formula (Sb₂Te₃)_1-x(MnSb₂Te₄)_x, where x varies between 0 and 1. Here we report on their magnetic and transport properties. We show that the samples are divided into three groups based on the value of x (or the percent septuple layers within the crystals) and their corresponding T_C values. Samples that contain x < 0.7 or x > 0.9 have a single T_C value of 15-20 K and 20-30 K, respectively, while samples with 0.7 < x < 0.8 exhibit two T_C values, one (T_C1) at ~ 25 K and the second (T_C2) reaching values above 80 K, almost twice as high as any reported value to date for these types of materials. Structural analysis shows that samples with 0.7 < x < 0.8 have large regions of only SLs, while other regions have isolated QLs embedded within the SL lattice. We propose that the SL regions give rise to a T_C1 of ~ 20 to 30 K, and regions with isolated QLs are responsible for the higher T_C2 values. Our results have important implications for the design of magnetic topological materials having enhanced properties.

Room-Temperature Intrinsic Ferromagnetic Chromium Tellurium Compounds with Thickness-Tunable Magnetic Texture

2D ferromagnetic chromium tellurides exhibit intriguing spin configurations and high-temperature intrinsic ferromagnetism, providing unprecedented opportunities to explore the fundamental spin physics and build spintronic devices. Here, a generic van der Waals epitaxial approach is developed to synthesize the 2D ternary chromium tellurium compounds with thicknesses down to mono-, bi-, tri-, and few-unit cells (UC). The Mn_0.14 Cr_0.86 Te evolves from intrinsic ferromagnetic behavior in bi-UC, tri-UC, and few-UC to temperature-induced ferrimagnetic behavior as the thickness increases, resulting in a sign reversal of the anomalous Hall resistance. Temperature- and thickness-tunable labyrinthine-domain ferromagnetic behaviors are derived from the dipolar interactions in Fe_0.26 Cr_0.74 Te and Co_0.40 Cr_0.60 Te. Furthermore, the dipolar-interaction-induced stripe domain and field-induced domain wall (DW) motion velocity are studied, and multibit data storage is realized through an abundant DW state. The magnetic storage can function in neuromorphic computing tasks, and the pattern recognition accuracy can reach up to 97.93%, which is similar to the recognition accuracy of ideal software-based training (98.28%). Room-temperature ferromagnetic chromium tellurium compounds with intriguing spin configurations can significantly promote the exploration of the processing, sensing, and storage based on 2D magnetic systems.

Heteroepitaxy of 2D CuCr2 Te4 with Robust Room-temperature Ferromagnetism

Magnetic materials in 2D have attracted widespread attention for their intriguing magnetic properties. 2D magnetic heterostructures can provide unprecedented opportunities for exploring fundamental physics and novel spintronic devices. Here, the heteroepitaxial growth of ferromagnetic CuCr₂ Te₄ nanosheets is reported on Cr₂ Te₃ and mica by chemical vapor deposition. Magneto-optical Kerr effect measurements reveal the thickness-dependent ferromagnetism of CuCr₂ Te₄ nanosheets on mica, where a decrease of Curie temperature (T_C ) from 320 to 260 K and an enhancement of perpendicular magnetic anisotropy with reducing thickness are observed. Moreover, lattice-matched heteroepitaxial ultrathin CuCr₂ Te₄ on Cr₂ Te₃ exhibits an enhanced robust ferromagnetism with T_C up to 340 K due to the interfacial charge transfer. Stripe-type magnetic domains and single magnetic domain are discovered in this heterostructure with different thicknesses. The work provides a way to construct robust room-temperature 2D magnetic heterostructures for functional spintronic devices.

Multiple Magnetic Topological Phases in the van der Waals Crystal Mn(Bi,Sb)4Se7

Magnetic topological materials have drawn markedly attention recently due to the strong coupling of their novel topological properties and magnetic configurations. In particular, the MnBi₂Te₄/(Bi₂Te₃)_n family highlights the researches of multiple magnetic topological materials. Via first-principles calculations, we predict that Mn(Bi, Sb)₄Se₇, the close relatives of MnBi₂Te₄/(Bi₂Te₃)_n family, are topological nontrivival in both antiferromagnetic and ferromagnetic configurations. In the antiferromagnetic ground state, Mn(Bi, Sb)₄Se₇ are simultaneously topological insulators and axion insulators. Massless Dirac surface states emerge on the surfaces parallel to the z axis. In ferromagnetic phases, they are axion insulators. Particularly, when the magnetization direction is along the x axis, they are also topological crystalline insulators. Mirror-symmetry-protected gapless surface states exist on the mirror-invariant surfaces. Hence, the behaviors of surface states are strongly dependent on the magnetization directions and surface orientations. Our work provides more opportunities for the study of magnetic topological physics.

Thickness-Tunable Growth of Composition-Controllable Two-Dimensional FexGeTe2

Two-dimensional (2D) magnetic materials provide an ideal platform for investigating novel magnetism and spin behavior in low-dimensional systems while being restricted by the deficiency of accurate bottom-up synthesis. To overcome this difficulty, a facile and universal flux-assisted growth (FAG) method is proposed to synthesize the multicomponent Fe_xGeTe₂ (x = 3-5) with different Fe contents and even alloyed with hetero metal atoms. This one-to-one method ensures the stoichiometry consistency from the Fe_xGeTe₂ and M_yFe_5-yGeTe₂ (M = Co, Ni) bulk crystal precursors to the 2D nanosheets, with controllable composition. Tuning the growth temperatures can provide thickness-tunable products. Changeable magnetic properties of Fe_xGeTe₂ and alloyed Co_yFe_5-yGeTe₂ are substantiated by the superconducting quantum interference device and reflective magnetic circular dichroism. This method generates thickness-tunable high-crystallinity Fe_xGeTe₂ samples without phase separation and exhibits a high tolerance to different substrates and a large temperature window, providing a new avenue to synthesize and explore such multicomponent 2D magnets and even the alloyed ones.

Ferromagnetic-antiferromagnetic coexisting ground state and exchange bias effects in MnBi4Te7 and MnBi6Te10

Natural superlattice structures MnBi₂Te₄(Bi₂Te₃)_n (n = 1, 2, ...), in which magnetic MnBi₂Te₄ layers are separated by nonmagnetic Bi₂Te₃ layers, hold band topology, magnetism and reduced interlayer coupling, providing a promising platform for the realization of exotic topological quantum states. However, their magnetism in the two-dimensional limit, which is crucial for further exploration of quantum phenomena, remains elusive. Here, complex ferromagnetic-antiferromagnetic coexisting ground states that persist down to the 2-septuple layers limit are observed and comprehensively investigated in MnBi₄Te₇ (n = 1) and MnBi₆Te₁₀ (n = 2). The ubiquitous Mn-Bi site mixing modifies or even changes the sign of the subtle interlayer magnetic interactions, yielding a spatially inhomogeneous interlayer coupling. Further, a tunable exchange bias effect, arising from the coupling between the ferromagnetic and antiferromagnetic components in the ground state, is observed in MnBi₂Te₄(Bi₂Te₃)_n (n = 1, 2), which provides design principles and material platforms for future spintronic devices. Our work highlights a new approach toward the fine-tuning of magnetism and paves the way for further study of quantum phenomena in MnBi₂Te₄(Bi₂Te₃)_n (n = 1, 2) as well as their magnetic applications.

Relationship between Antisite Defects, Magnetism, and Band Topology in MnSb2Te4 Crystals with TC ≈ 40 K

MnSb₂Te₄ has attracted extensive attention because of its rich and adjustable magnetic properties. Here, using a modified crystal growth method, ferrimagnetic MnSb₂Te₄ crystals with enhanced Curie temperature (T_C) of about 40 K with dominant hole-type carriers and intrinsic anomalous Hall effect is obtained. Time- and angle-resolved photoemission spectroscopy reveals that surface states are absent in both antiferromagnetic and ferrimagnetic MnSb₂Te₄, implying that they have topologically trivial electronic structures. We propose that the enhancement of ferrimagnetism mainly originates from the increase of intralayer magnetic coupling caused by the decrease of Sb content at Mn sites when the decrease of Mn concentration at Sb sites would prefer the nontrival band topology. Moreover, it is known that the initial saturation moment (M_is) is sensitive to the concentrations of Mn/Sb antisite defects; thus, the M_is could be a valuable parameter to evaluate the magnetic and topological properties of MnX_2nTe_3n+1 (X = Bi, Sb) families.