Role of strain-dependent surface energies in Ge/Si(100) island formation

Observation of negative surface and interface energies of quantum dots

Surface energy is a fundamental property of materials and is particularly important in describing nanomaterials where atoms or molecules at the surface constitute a large fraction of the material. Traditionally, surface energy is considered to be a positive quantity, where atoms or molecules at the surface are less thermodynamically stable than their counterparts in the interior of the material because they have fewer bonds or interactions at the surface. Using calorimetric methods, we show that the surface energy is negative in some prototypical colloidal semiconductor nanocrystals, or quantum dots with organic ligand coatings. This implies that the surface atoms are more thermodynamically stable than those on the interior due to the strong bonds between these atoms and surfactant molecules, or ligands, that coat their surface. In addition, we extend this work to core/shell indium phosphide/zinc sulfide nanocrystals and show that the interfacial energy between these materials is highly thermodynamically favorable in spite of their large lattice mismatch. This work challenges many of the assumptions that have guided thinking about colloidal nanomaterial thermodynamics, investigates the fundamental stability of many technologically relevant colloidal nanomaterials, and paves the way for future experimental and theoretical work on nanocrystal thermodynamics.

Imaging 3D chemistry at 1 nm resolution with fused multi-modal electron tomography

Measuring the three-dimensional (3D) distribution of chemistry in nanoscale matter is a longstanding challenge for metrological science. The inelastic scattering events required for 3D chemical imaging are too rare, requiring high beam exposure that destroys the specimen before an experiment is completed. Even larger doses are required to achieve high resolution. Thus, chemical mapping in 3D has been unachievable except at lower resolution with the most radiation-hard materials. Here, high-resolution 3D chemical imaging is achieved near or below one-nanometer resolution in an Au-Fe3O4 metamaterial within an organic ligand matrix, Co3O4-Mn3O4 core-shell nanocrystals, and ZnS-Cu0.64S0.36 nanomaterial using fused multi-modal electron tomography. Multi-modal data fusion enables high-resolution chemical tomography often with 99% less dose by linking information encoded within both elastic (HAADF) and inelastic (EDX/EELS) signals. We thus demonstrate that sub-nanometer 3D resolution of chemistry is measurable for a broad class of geometrically and compositionally complex materials.

Controlled formation of three-dimensional cavities during lateral epitaxial growth

Epitaxial growth is a fundamental step required to create devices for the semiconductor industry, enabling different materials to be combined in layers with precise control of strain and defect structure. Patterning the growth substrate with a mask before performing epitaxial growth offers additional degrees of freedom to engineer the structure and hence function of the semiconductor device. Here, we demonstrate that conditions exist where such epitaxial lateral overgrowth can produce complex, three-dimensional structures that incorporate cavities of deterministic size. We grow germanium on silicon substrates patterned with a dielectric mask and show that fully-enclosed cavities can be created through an unexpected self-assembly process that is controlled by surface diffusion and surface energy minimization. The result is confined cavities enclosed by single crystalline Ge, with size and position tunable through the initial mask pattern. We present a model to account for the observed cavity symmetry, pinch-off and subsequent evolution, reflecting the dominant role of surface energy. Since dielectric mask patterning and epitaxial growth are compatible with conventional device processing steps, we suggest that this mechanism provides a strategy for developing electronic and photonic functionalities.

Design and synthesis of multigrain nanocrystals via geometric misfit strain

The impact of topological defects associated with grain boundaries (GB defects) on the electrical, optical, magnetic, mechanical and chemical properties of nanocrystalline materials^1,2 is well known. However, elucidating this influence experimentally is difficult because grains typically exhibit a large range of sizes, shapes and random relative orientations^3-5. Here we demonstrate that precise control of the heteroepitaxy of colloidal polyhedral nanocrystals enables ordered grain growth and can thereby produce material samples with uniform GB defects. We illustrate our approach with a multigrain nanocrystal comprising a Co₃O₄ nanocube core that carries a Mn₃O₄ shell on each facet. The individual shells are symmetry-related interconnected grains⁶, and the large geometric misfit between adjacent tetragonal Mn₃O₄ grains results in tilt boundaries at the sharp edges of the Co₃O₄ nanocube core that join via disclinations. We identify four design principles that govern the production of these highly ordered multigrain nanostructures. First, the shape of the substrate nanocrystal must guide the crystallographic orientation of the overgrowth phase⁷. Second, the size of the substrate must be smaller than the characteristic distance between the dislocations. Third, the incompatible symmetry between the overgrowth phase and the substrate increases the geometric misfit strain between the grains. Fourth, for GB formation under near-equilibrium conditions, the surface energy of the shell needs to be balanced by the increasing elastic energy through ligand passivation^8-10. With these principles, we can produce a range of multigrain nanocrystals containing distinct GB defects.

Capillary-driven elastic attraction between quantum dots

We present a novel self-assembly route to align SiGe quantum dots. By a combination of theoretical analyses and experimental investigation, we show that epitaxial SiGe quantum dots can cluster in ordered closely packed assemblies, revealing an attractive phenomenon. We compute nucleation energy barriers, accounting for elastic effects between quantum dots through both elastic energy and strain-dependent surface energy. If the former is mostly repulsive, we show that the decrease in the surface energy close to an existing island reduces the nucleation barrier. It subsequently increases the probability of nucleation close to an existing island, and turns out to be equivalent to an effective attraction between dots. We show by Monte-Carlo simulations that this effect describes well the experimental results, revealing a new mechanism ruling self-organisation of quantum dots. Such a generic process could be observed in various heterogeneous systems and could pave the way for a wide range of applications.

Li-Rich Li[Li1/6 Fe1/6 Ni1/6 Mn1/2 ]O2 (LFNMO) Cathodes: Atomic Scale Insight on the Mechanisms of Cycling Decay and of the Improvement due to Cobalt Phosphate Surface Modification

Lithium-rich Li[Li_1/6 Fe_1/6 Ni_1/6 Mn_1/2 ]O₂ (0.4Li₂ MnO₃ -0.6LiFe_1/3 Ni_1/3 Mn_1/3 O₂ , LFNMO) is a new member of the xLi₂ MnO₃ ·(1 - x)LiMO₂ family of high capacity-high voltage lithium-ion battery (LIB) cathodes. Unfortunately, it suffers from the severe degradation during cycling both in terms of reversible capacity and operating voltage. Here, the corresponding degradation occurring in LFNMO at an atomic scale has been documented for the first time, using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), as well as tracing the elemental crossover to the Li metal anode using X-ray photoelectron spectroscopy (XPS). It is also demonstrated that a cobalt phosphate surface treatment significantly boosts LFNMO cycling stability and rate capability. Due to cycling, the unmodified LFNMO undergoes extensive elemental dissolution (especially Mn) and O loss, forming Kirkendall-type voids. The associated structural degradation is from the as-synthesized R-3m layered structure to a disordered rock-salt phase. Prior to cycling, the cobalt phosphate coating is epitaxial, sharing the crystallography of the parent material. During cycling, a 2-3 nm thick disordered Co-rich rock-salt structure is formed as the outer shell, while the bulk material retains R-3m crystallography. These combined cathode-anode findings significantly advance the microstructural design principles for next-generation Li-rich cathode materials and coatings.

The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

The development of efficient green light-emitting diodes (LEDs) is of paramount importance for the realization of colour-mixing white LEDs with a high luminous efficiency. While the insertion of an InGaN/GaN superlattice (SL) with a lower In content before the growth of InGaN/GaN multiple quantum wells (MQWs) is known to increase the efficiency of LEDs, the actual mechanism is still debated. We therefore conduct a systematic study and investigate the different mechanisms for this system. Through cathodoluminescence and Raman measurements, we clearly demonstrate that the potential barrier formed by the V-pit during the low-temperature growth of an InGaN/GaN SL dramatically increases the internal quantum efficiency (IQE) of InGaN quantum wells (QWs) by suppressing non-radiative recombination at threading dislocations (TDs). We find that the V-pit potential barrier height depends on the V-pit diameter, which plays an important role in determining the quantum efficiency, forward voltage and efficiency droop of green LEDs. Furthermore, our study reveals that the low-temperature GaN can act as an alternative to an InGaN/GaN SL structure for promoting the formation of V-pits. Our findings suggest the potential of implementing optimized V-pits embedded in an InGaN/GaN SL or low-temperature GaN structure as a beneficial underlying layer for the realization of highly efficient green LEDs.

Observation of Ultrathin Precursor Film Formation during Ge-Si Liquid-Phase Epitaxy from an Undersaturated Solution

Our in situ X-ray study shows that a silicon substrate in contact with an undersaturated In(Ge) solution is wetted by an approximately 1 nm thin germanium film, which does not grow any thicker. The results can be understood by the use of thickness-dependent correlated interfacial energies. This near-equilibrium heterogeneous interface structure marks the initial stage of crystal growth before the formation of bulk material, which can only form under conditions of supersaturation. This finding uncovers a fundamental aspect of the thermodynamics at solid-liquid interfaces relevant for understanding the transition from equilibrium to supersaturation and is of importance for nanoscale solution growth methods.

Tuning Surface Properties of Low Dimensional Materials via Strain Engineering

The promising and versatile applications of low dimensional materials are largely due to their surface properties, which along with their underlying electronic structures have been well studied. However, these materials may not be directly useful for applications requiring properties other than their natal ones. In recent years, strain has been shown to be an additionally useful handle to tune the physical and chemical properties of materials by changing their geometric and electronic structures. The strategies for producing strain are summarized. Then, the electronic structure of quasi-two dimensional layered non-metallic materials (e.g., graphene, MX2, BP, Ge nanosheets) under strain are discussed. Later, the strain effects on catalytic properties of metal-catalyst loaded with strain are focused on. Both experimental and computational perspectives for dealing with strained systems are covered. Finally, an outlook on engineering surface properties utilizing strain is provided.

Pseudo-Hydrogen Passivation: A Novel Way to Calculate Absolute Surface Energy of Zinc Blende (111)/(͞1 ͞1 ͞1) Surface

Determining accurate absolute surface energies for polar surfaces of semiconductors has been a great challenge in decades. Here, we propose pseudo-hydrogen passivation to calculate them, using density functional theory approaches. By calculating the energy contribution from pseudo-hydrogen using either a pseudo molecule method or a tetrahedral cluster method, we obtained (111)/(111) surfaces energies of Si, GaP, GaAs, and ZnS with high self-consistency. This method quantitatively confirms that surface energy is determined by the number and the energy of dangling bonds of surface atoms. Our findings may greatly enhance the basic understandings of different surfaces and lead to novel strategies in the crystal growth.

Directed self-organization of quantum dots

We devise a nonlinear dynamical model of the growth of strained islands on a pattern. We study the morphological instability of a thin film that develops with a characteristic wavelength in the presence of an external forcing due to an underlying patterned substrate with another wavelength. We find in some conditions that the islands can form in well-organized arrays located on either the peaks or valleys of the pattern depending on the film thickness and ratio of the two characteristic wavelengths. These results are rationalized by a kinetic phase diagram and correlated with the morphology when the islands and the wetting layer grow. We find that the islands may be ordered and homogeneous when their coarsening is significantly slowed down, in agreement with experimental observations reported in the literature.

Interrupted self-organization of SiGe pyramids

We investigate the morphological evolution of SiGe quantum dots deposited on Si(100) during long-time annealing. At low strain, the dots' self-organization begins by an instability and interrupts when (105) pyramids form. This evolution and the resulting island density are quantified by molecular-beam epitaxy. A kinetic model accounting for elasticity, wetting, and anisotropy is shown to reproduce well the experimental findings with appropriate wetting parameters. In this nucleationless regime, a mean-field kinetic analysis explains the existence of nearly stationary states by the vanishing of the coarsening driving force. The island size distribution follows in both experiments and theory the scaling law associated with a single characteristic length scale.

Synthesis of octopus-tentacle-like Cu nanowire-Ag nanocrystals heterostructures and their enhanced electrocatalytic performance for oxygen reduction reaction

In this article, the novel octopus-tentacle-like Cu nanowire-Ag nanocrystals heterostructures have been fabricated in solution phase via heterogeneous nucleation and growth of Ag nanocrystals on presynthesized Cu nanowires. The growth environment and dynamic factors of Ag nanocrystals play an important role for formation of such heterostructures. Combined the physical constants of Cu and Ag with a series of control experiments, the epitaxial growth means of Ag nanocrystals on Cu nanowire is found to abide by "layer-plus-island" (Stranski-Krastanow) mode. Because of the presence of multiple junctions and strong synergistic effect of their constituents, the obtained heterostructures exhibit greatly enhanced electrocatalytic performance toward oxygen reduction reaction compared with that of pure Ag nanocrystals, Cu nanowires, and mechanically mixed dual components as well as recently reported some non-Pt materials, which can be served as an alternative cathodic electrocatalyst to apply in alkaline fuel cells. Moreover, our method can be extended to fabricate octopus-tentacle-like Cu nanowire-Au nanocrystals and Cu nanowire-Pd nanocrystals heterostructures.

Formation of Ge nanoripples on vicinal Si (1110): from Stranski-Krastanow seeds to a perfectly faceted wetting layer

Ge growth on high-indexed Si (1110) is shown to result in the spontaneous formation of a perfectly {105} faceted one-dimensional nanoripple structure. This evolution differs from the usual Stranski-Krastanow growth mode because from initial ripple seeds a faceted Ge layer is formed that extends down to the heterointerface. Ab initio calculations reveal that ripple formation is mainly driven by lowering of surface energy rather than by elastic strain relief and the onset is governed by the edge energy of the ripple facets. Wavelike ripple replication is identified as an effective kinetic pathway for the transformation process.

Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001)

The evolution of the wetting layer (WL) thickness during Ge deposition on Si(001) is analyzed with the help of a rate-equation approach. The combined role of thickness, island volume and shape-dependent chemical potentials is considered. Several experimental observations, such as WL thinning following the pyramid-to-dome transformation, are captured by the model, as directly demonstrated by a close comparison with photoluminescence measurements (PL) on samples grown at three different temperatures. The limitations of the model in describing late stages of growth are critically addressed.

Kinetic Monte Carlo simulation of faceted islands in heteroepitaxy using a multistate lattice model

A solid-on-solid model is generalized to study the formation of Ge pyramid islands bounded by (105) facets on Si(100) substrates in two dimensions. Each atomic column is not only characterized by the local surface height but also by two deformation state variables dictating the local surface tilt and vertical extension. These local deformations phenomenologically model surface reconstructions in (105) facets and enable the formation of islands which better resemble faceted pyramids. We apply the model to study a kinetic limited growth regime. Transitions from stepped mounds into faceted islands under deposition conditions are demonstrated. It is shown that a significantly reduced growth rate after faceting leads to a continuous nucleation of new islands until overcrowding occurs. The island size distribution is now dominated by fluctuations in the initial island size during faceting and the increased diversity in the ages of the islands. This multistate model may find applications in kinetic simulations of other nanostructures or nanoclusters involving arbitrary high-index surfaces.

Global faceting behavior of strained Ge islands on Si

The evolution of crystallographic facets of strained heteroepitaxial Ge islands on Si is investigated. Islands growing on Si(001), (111), (110) and (113) are bound by an equilibrium set of facets that includes only shared stable surfaces between bulk Si and Ge--{105}, {113}, {15 3 23} and {111}. The formation of a stereographic map from these indices facilitates the prediction of Ge faceted-island shapes on any Si substrate at different stages of growth. The analysis presented here can be applied to other heteroepitaxial islanding systems where a finite set of shared equilibrium facets exists for the bulk starting materials.

Pb nanoprecipitates in Al: magic-shape effects due to elastic strain

We present a theory for size-dependent shapes of Pb nanoprecipitates in Al, introducing the concept of "magic shapes," i.e., shapes having near-zero homogeneous elastic strains. Our quantitative atomistic calculations of edge energies show their effect on precipitate shape to be negligible, thus it appears that shapes must be due to the combined effect of strain and interface energies. By employing an algorithm for generating magic shapes, we replicate the experimental observations by selecting magic-shape precipitates with interfacial energies less than a cutoff value.

Crystal-melt interface stresses: atomistic simulation calculations for a Lennard-Jones binary alloy, Stillinger-Weber Si, and embedded atom method Ni

Molecular-dynamics and Monte Carlo simulations have been used to compute the crystal-melt interface stress (f) in a model Lennard-Jones (LJ) binary alloy system, as well as for elemental Si and Ni modeled by many-body Stillinger-Weber and embedded-atom-method (EAM) potentials, respectively. For the LJ alloys the interface stress in the (100) orientation was found to be negative and the f vs composition behavior exhibits a slight negative deviation from linearity. For Stillinger-Weber Si, a positive interface stress was found for both (100) and (111) interfaces: f{100}=(380+/-30)mJ/m{2} and f{111}=(300+/-10)mJ/m{2}. The Si (100) and (111) interface stresses are roughly 80 and 65% of the value of the interfacial free energy (gamma) , respectively. In EAM Ni we obtained f{100}=(22+/-74)mJ/m{2}, which is an order of magnitude lower than gamma. A qualitative explanation for the trends in f is discussed.

Is the elongation of Ge huts in the low-temperature regime governed by kinetics?

Contrary to pyramids and domes, elongated huts on a Si(001) substrate are commonly considered as kinetically limited structures. In this work, however, based on detailed scanning tunneling microscopy observations of Ge huts growing on Si(001) at temperatures below 550 degrees C and finite element analysis, the possibility of an equilibrium-driven elongation is raised, where hut-preceding pits are thought to lift the energetic degeneracy of {105} facets and cause elongation along energetically preferred directions.

Controlling self-assembled perovskite-spinel nanostructures

We report a discovery that self-assembled perovskite-spinel nanostructures can be controlled simply by selecting single-crystal substrates with different orientations. In a model BiFeO(3)-CoFe(2)O(4) system, a (001) substrate results in rectangular-shaped CoFe(2)O(4) nanopillars in a BiFeO(3) matrix; in contrast, a (111) substrate leads to triangular-shaped BiFeO(3) nanopillars in a CoFe(2)O(4) matrix, irrespective of the volume fraction of the two phases. This dramatic reversal is attributed to the surface energy anisotropy as an intrinsic property of a crystal.

Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density

We have studied the epitaxial growth of self-assembled Ge quantum dots when a submonolayer of carbon is deposited on a Ge wetting layer (WL) prior to the growth of the dots. Using atomic-force microscopy combined with optical techniques like Raman and ellipsometry, we performed a systematic study of the role played by thermally activated Si interdiffusion on dot density, composition and morphology, by changing only the growth temperature T(WL) of the WL. Strikingly, we observe that higher dot densities and a narrower size distribution are achieved by increasing the deposition temperature T(WL), i.e. by enhancing Si interdiffusion from the substrate. We suggest a two-stage growth procedure for fine tuning of dot topography (density, shape and size) useful for possible optoelectronic applications.

Orientation dependence of strained-Ge surface energies near (001): role of dimer-vacancy lines and their interactions with steps

Recent experiments and calculations have highlighted the important role of surface-energy (gamma) anisotropy in governing island formation in the Ge/Si(001) system. To further elucidate the factors determining this anisotropy, we perform atomistic and continuum calculations of the orientation dependence of gamma for strained-Ge surfaces near (001), accounting for the presence of dimer-vacancy lines (DVLs). The net effect of DVLs is found to be a substantial reduction in the magnitude of the slope of gamma vs orientation angle, relative to the highly negative value derived for non-DVL, dimer-reconstructed, strained-Ge(001) surfaces. The present results thus point to an important role of DVLs in stabilizing the (001) surface orientation of a strained-Ge wetting layer.