Unusual behavior of the ferroelectric polarization in PbTiO3/SrTiO3 superlattices

Antiferroelectric Heterostructures Memristors with Unique Resistive Switching Mechanisms and Properties

A novel antiferroelectric material, PbSnO3 (PSO), was introduced into a resistive random access memory (RRAM) to reveal its resistive switching (RS) properties. It exhibits outstanding electrical performance with a large memory window (>104), narrow switching voltage distribution (±2 V), and low power consumption. Using high-resolution transmission electron microscopy, we observed the antiferroelectric properties and remanent polarization of the PSO thin films. The in-plane shear strains in the monoclinic PSO layer are attributed to oxygen octahedral tilts, resulting in misfit dislocations and grain boundaries at the PSO/SRO interface. Furthermore, the incoherent grain boundaries between the orthorhombic and monoclinic phases are assumed to be the primary paths of Ag+ filaments. Therefore, the RS behavior is primarily dominated by antiferroelectric polarization and defect mechanisms for the PSO structures. The RS behavior of antiferroelectric heterostructures controlled by switching spontaneous polarization and strain, defects, and surface chemistry reactions can facilitate the development of new antiferroelectric device systems.

Liquid-Crystal-Like Dynamic Transition in Ferroelectric-Dielectric Superlattices

Nanostructured ferroelectrics display exotic multidomain configurations resulting from the electrostatic and elastic boundary conditions they are subject to. While the ferroelectric domains appear frozen in experimental images, atomistic second-principles studies suggest that they may become spontaneously mobile upon heating, with the polar order melting in a liquidlike fashion. Here, we run molecular dynamics simulations of model systems (PbTiO_{3}/SrTiO_{3} superlattices) to study the unique features of this transformation. Most notably, we find that the multidomain state loses its translational and orientational orders at different temperatures, resembling the behavior of liquid crystals and yielding an intermediate hexaticlike phase. Our simulations reveal the mechanism responsible for the melting and allow us to characterize the stochastic dynamics in the hexaticlike phase: we find evidence that it is thermally activated, with domain reorientation rates that grow from tens of gigahertzs to terahertzs in a narrow temperature window.

Novel Route for Enhancing Piezoelectricity of Ferroelectric Films: Controlling Nontrivial Polarization States in Pb(Zr, Ti)O3 Monodomain Superlattice Structure

Artificial superlattice films made of Pb(Zr0.4Ti0.6)O3 and Pb(Zr0.6Ti0.4)O3 were investigated for their polarization states and piezoelectric properties theoretically and experimentally in this study. The developed theory predicts nontrivial polarization along neither [001] nor [111] directions in (111)-epitaxial monodomain superlattice films with uniform compressive strain. Such films were achieved via pulsed laser deposition. When the layer thickness is reduced to 3 nm, d33 becomes 128 ± 3.8 pm/V at 100 kV/cm and 71.3 ± 2.83 pm/V at 600 kV/cm, comparable to that of (111)-oriented Pb(Zr0.4Ti0.6)O3 or Pb(Zr0.6Ti0.4)O3 bulks and clearly exceeding that of the typical clamped films. The measurement agrees with the theoretical analysis, which reveals that the enhanced piezoelectricity is due to rotation of the nontrivial polarization. Furthermore, the theoretical study predicts an even larger d33 exceeding 300 pm/V for specific parameters in superlattice films with uniform tensile strain, which is promising for applications of microelectromechanical systems.

Interlayer Coupling Controlled Ordering and Phases in Polar Vortex Superlattices

The recent discovery of polar topological structures has opened the door for exciting physics and emergent properties. There is, however, little methodology to engineer stability and ordering in these systems, properties of interest for engineering emergent functionalities. Notably, when the surface area is extended to arbitrary thicknesses, the topological polar texture becomes unstable. Here we show that this instability of the phase is due to electrical coupling between successive layers. We demonstrate that this electrical coupling is indicative of an effective screening length in the dielectric, similar to the conductor-ferroelectric interface. Controlling the electrostatics of the superlattice interfaces, the system can be tuned between a pure topological vortex state and a mixed classical-topological phase. This coupling also enables engineering coherency among the vortices, not only tuning the bulk phase diagram but also enabling the emergence of a 3D lattice of polar textures.

Non-volatile electric-field control of inversion symmetry

Competition between ground states at phase boundaries can lead to significant changes in properties under stimuli, particularly when these ground states have different crystal symmetries. A key challenge is to stabilize and control the coexistence of symmetry-distinct phases. Using BiFeO₃ layers confined between layers of dielectric TbScO₃ as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BiFeO₃ phases at room temperature with antipolar, insulating and polar semiconducting behaviour, respectively. Application of orthogonal in-plane electric (polar) fields results in reversible non-volatile interconversion between the two phases, hence removing and introducing centrosymmetry. Counterintuitively, we find that an electric field 'erases' polarization, resulting from the anisotropy in octahedral tilts introduced by the interweaving TbScO₃ layers. Consequently, this interconversion between centrosymmetric and non-centrosymmetric phases generates changes in the non-linear optical response of over three orders of magnitude, resistivity of over five orders of magnitude and control of microscopic polar order. Our work establishes a platform for cross-functional devices that take advantage of changes in optical, electrical and ferroic responses, and demonstrates octahedral tilts as an important order parameter in materials interface design.

Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO₃. By confining thin layers of BiFeO₃ in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.

Signatures of enhanced out-of-plane polarization in asymmetric BaTiO3 superlattices integrated on silicon

In order to bring the diverse functionalities of transition metal oxides into modern electronics, it is imperative to integrate oxide films with controllable properties onto the silicon platform. Here, we present asymmetric LaMnO₃/BaTiO₃/SrTiO₃ superlattices fabricated on silicon with layer thickness control at the unit-cell level. By harnessing the coherent strain between the constituent layers, we overcome the biaxial thermal tension from silicon and stabilize c-axis oriented BaTiO₃ layers with substantially enhanced tetragonality, as revealed by atomically resolved scanning transmission electron microscopy. Optical second harmonic generation measurements signify a predominant out-of-plane polarized state with strongly enhanced net polarization in the tricolor superlattices, as compared to the BaTiO₃ single film and conventional BaTiO₃/SrTiO₃ superlattice grown on silicon. Meanwhile, this coherent strain in turn suppresses the magnetism of LaMnO₃ as the thickness of BaTiO₃ increases. Our study raises the prospect of designing artificial oxide superlattices on silicon with tailored functionalities.

Integrating multifunctional oxides on silicon is highly desirable. Here, the authors present asymmetric BaTiO3 superlattices on silicon exhibiting enhanced out-of-plane polarization by harnessing the interfacial strain and broken inversion symmetry.

Ferroelectricity and Ferromagnetism Achieved via Adjusting Dimensionality in BiFeO3/BiMnO3 Superlattices

Integrating characteristics of materials through constructing artificial superlattices (SLs) has raised extensive attention in multifunctional materials. Here, we report the synthesis of BiFeO₃/BiMnO₃ SLs with considerable ferroelectric polarizations and tunable magnetic moments. The polarization of BiFeO₃/BiMnO₃ SLs presents a decent value of 12 μC/cm², even as the dimensionality of BiFeO₃ layers per period is reduced to about five-unit cells when keeping the BiMnO₃ layers same. Moreover, it is found that the tunable magnetic moments of SLs are linked intimately to the dimensionality of BiFeO₃ layers. Our simulations demonstrate that the superexchange interaction of Fe-O-Mn tends to be antiferromagnetic (AFM) with a lower magnetic domain formation energy rather than ferromagnetic (FM). Therefore, as the dimensionality of BiFeO₃ per period is reduced, the AFM superexchange interaction between BiFeO₃ and BiMnO₃ in the SLs becomes weak, promoting a robust magnetization. This interlayer modulation effect in SLs presents an alluring way to accurately control the multiple order parameters in a multiferroic oxide system.

Strain-driven autonomous control of cation distribution for artificial ferroelectrics

In past few decades, there have been substantial advances in theoretical material design and experimental synthesis, which play a key role in the steep ascent of developing functional materials with unprecedented properties useful for next-generation technologies. However, the ultimate goal of synthesis science, i.e., how to locate atoms in a specific position of matter, has not been achieved. Here, we demonstrate a unique way to inject elements in a specific crystallographic position in a composite material by strain engineering. While the use of strain so far has been limited for only mechanical deformation of structures or creation of elemental defects, we show another powerful way of using strain to autonomously control the atomic position for the synthesis of new materials and structures. We believe that our synthesis methodology can be applied to wide ranges of systems, thereby providing a new route to functional materials.

Rich antiferroelectric phase diagram of antiferroelectric-ferroelectric superlattices: internal electric field- and interface induced phase transitions

We propose a thermodynamic model to the study the antiferroelectric (AFE) phase transitions in antiferroelectric-ferroelectric (AFE-FE) superlattices in which the coupling at the interface between two layers is mediated by local polarizations. Phase diagram of the AFE layer in term of the degree of interfacial effectλand temperatureTinvolving ferrielectric (FI) and ferroelectric (FE) phases is investigated. These two phases are stabilized by the interfacial effect and internal electric field. AFE thicknessLAFEversusTphase diagram is also constructed. Intermediate regions of two-phase coexistence (IM) emerge in theλ-TandLAFE-Tphase diagrams, if certain interface propertiesλand layer thicknessLAFEcriteria are met. These IM regions are metastable states, which exist as a transition state between two phases. A tricritical point locates at the boundaries across the FI, IM and FE phases is found in theLAFE-Tphase diagram. Competition among the internal electric field due to the electrostatic coupling, the FE ordering arises from the interfacial effect and the antiferroelectric ordering within the AFE layer giving rises to the rich AFE phase diagram.

Role of ferroelectric polarization during growth of highly strained ferroelectric materials

In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure. Here we show that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. This is studied by focusing on the properties of BaTiO₃ thin films grown on very thin layers of PbTiO₃ using x-ray diffraction, piezoforce microscopy, electrical characterization and rapid in-situ x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. This motivates the concept of polarization engineering as a complementary approach to strain engineering.

Ferroelectric (FE) materials are used in a wide range of applications, which often requires sizable FE polarization. Here, the authors report a growth procedure to enhance the FE polarization by exploiting the polarization of a FE substrate during growth to obtain higher strains and polarizations in the final material.

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Negative capacitance (NC) effects in ferroelectric/paraelectric (FE/PE) stacks have been recently discussed intensively in terms of the steep subthreshold swing (SS) in field-effect transistors (FETs). It is, however, still disputable to stabilize quasi-static-NC effects. In this work, stepwise internal potential jumps in a metal/FE/metal/PE/metal system observed near the coercive voltage of the FE layer are reported through carefully designed DC measurements. The relationship of the internal potential jumps with the steep SS in FETs is also experimentally confirmed by connecting a FE capacitor to a simple metal-oxide-semiconductor FET. On the basis of the experimental results, the observed internal potential jumps are analytically modelled from the viewpoint of bound charge emission associated with each domain flip in a multiple-domain FE layer in a FE/PE stack. This view is different from the original NC concept and should be employed for characterizing FE/PE gate stack FETs.

Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed. Here the authors propose a model distinct from the NC concept, taking into account domain flips in multiple-domain ferroelectric/paraelectric gate stack FETs.

Mix and Match: Organic and Inorganic Ions in the Perovskite Lattice

Materials science evolves to a state where the composition and structure of a crystal can be controlled almost at will. Given that a composition meets basic requirements of stoichiometry, steric demands, and charge neutrality, researchers are now able to investigate a wide range of compounds theoretically and, under various experimental conditions, select the constituting fragments of a crystal. One intriguing playground for such materials design is the perovskite structure. While a game of mixing and matching ions has been played successfully for about 150 years within the limits of inorganic compounds, the recent advances in organic-inorganic hybrid perovskite photovoltaics have triggered the inclusion of organic ions. Organic ions can be incorporated on all sites of the perovskite structure, leading to hybrid (double, triple, etc.) perovskites and inverse (hybrid) perovskites. Examples for each of these cases are known, even with all three sites occupied by organic molecules. While this change from monatomic ions to molecular species is accompanied with increased complexity, it shows that concepts from traditional inorganic perovskites are transferable to the novel hybrid materials. The increased compositional space holds promising new possibilities and applications for the universe of perovskite materials.

Significant enhancement of energy storage density and polarization in self-assembled PbZrO3 : NiO nano-columnar composite films

Self-assembled nanostructures are important for determining the physical properties of epitaxial oxide films. We successfully fabricated perfectly ordered NiO nano-columns embedded in an antiferroelectric (AFE) PbZrO3 (PZO) matrix over large areas. In this system, a giant recoverable energy storage density of Wr = 24.6 J cm-3 and polarization of PS = 91 μC cm-2 were achieved in the structure of PZO : NiO nano-composites. These values are 333% and 253% larger than those of a pure PZO film, respectively. Additionally, the properties could be tuned by gradually changing the volume ratio of the constituents. Hence, we demonstrate a new approach for enhancing the energy storage of AFE materials and exercising control over nano-column-embedded nanocomposites.

Enhanced piezocatalytic, photocatalytic and piezo-/photocatalytic performance of diphasic Ba1−xCaxTiO3 nanowires near a solubility limit

Diphasic Ba_1−xCa_xTiO₃ nanowires near a solubility limit exhibit enhanced piezocatalytic, photocatalytic and piezo-/photocatalytic performance.

Electrostatic Force-Driven Oxide Heteroepitaxy for Interface Control

Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low-temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid-liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering.

Quantum Confinement in Oxide Heterostructures: Room-Temperature Intersubband Absorption in SrTiO3/LaAlO3 Multiple Quantum Wells

The Si-compatibility of perovskite heterostructures offers the intriguing possibility of producing oxide-based quantum well (QW) optoelectronic devices for use in Si photonics. While the SrTiO₃/LaAlO₃ (STO/LAO) system has been studied extensively in the hopes of using the interfacial two-dimensional electron gas in Si-integrated electronics, the potential to exploit its giant 2.4 eV conduction band offset in oxide-based QW optoelectronic devices has so far been largely ignored. Here, we demonstrate room-temperature intersubband absorption in STO/LAO QW heterostructures at energies on the order of hundreds of meV, including at energies approaching the critically important telecom wavelength of 1.55 μm. We demonstrate the ability to control the absorption energy by changing the width of the STO well layers by a single unit cell and present theory showing good agreement with experiment. A detailed structural and chemical analysis of the samples via scanning transmission electron microscopy and electron energy loss spectroscopy is presented. This work represents an important proof-of-concept for the use of transition metal oxide QWs in Si-compatible optoelectronic devices.

Dielectric Properties and Switching Processes of Barium Titanate⁻Barium Zirconate Ferroelectric Superlattices

This article is devoted to the investigation of the dielectric and repolarization properties of barium zirconate and barium titanate BaZrO₃/BaTiO₃ superlattices with a period of 13.322 nm on a monocrystal magnesium oxide (MgO) substrate. Synthesized superlattices demonstrated a ferroelectric phase transition at a temperature of approximately 393 °C, which is far higher than the Curie temperature of BaTiO₃ thin films and bulk samples. The dielectric permittivity of the superlattice reached more than 10⁴ at maximum. As the electric field frequency increased, the dielectric constant of the studied superlattice decreased over the entire study temperature range, but position of the maximum dielectric constant remained the same with changing frequency. The temperature dependence of the inverse dielectric permittivity 1/ε(T) for the studied samples shows that, in the investigated superlattice, both Curie⁻Weiss law and the law of "two" were followed. Additionally, the ε(T) dependences showed practically no temperature hysteresis with heating and cooling. Samples of synthesized superlattices had a relatively small internal bias field, which was directed from the superlattice towards the substrate.

On the stabilization of ferroelectric negative capacitance in nanoscale devices

Recently, the proposal to use voltage amplification from ferroelectric negative capacitance (NC) to reduce the power dissipation in nanoelectronic devices has attracted significant attention. Homogeneous Landau theory predicts, that by connecting a ferroelectric in series with a dielectric capacitor, a hysteresis-free NC state can be stabilized in the ferroelectric below a critical film thickness. However, there is a strong discrepancy between experimental results and the current theory. Here, we present a comprehensive revision of the theory of NC stabilization with respect to scaling of material and device dimensions based on multi-domain Ginzburg-Landau theory. It is shown that the use of a metal layer in between the ferroelectric and the dielectric will inherently destabilize NC due to domain formation. However, even without this metal layer, domain formation can reduce the critical ferroelectric thickness considerably, limiting not only the range of NC stabilization, but also the maximum amplification attainable. To overcome these obstacles, the downscaling of lateral device dimensions is proposed as a way to prevent domain formation and to enhance the voltage amplification due to NC. These insights will be crucial for future NC device design and scaling towards nanoscale dimensions.

Density functional theory computational study of ferroelectricity and piezoelectricity in BaTiO3/PbTiO3 (0 1 1) superlattices

The structure, ferroelectricity (FE), and piezoelectricity of epitaxial BaTiO₃/PbTiO₃ (BTO/PTO) (0 1 1) superlattices are studied using density functional theory calculations. Our results show that compressive strain arising from the SrTiO₃ (0 1 1) substrate stabilizes the (BTO) _m /(PTO) _n (0 1 1) superlattices in orthorhombic phase with the FE polarization along [0 1 1] direction. Tuning the BTO contents significantly changes the structural, ferroelectric and piezoelectric properties. The FE polarization of superlattices significantly drops with increasing BTO contents, which can be attributed to depolarization of the PTO layers. The averaged c/a ratio of the whole superlattices exhibits anomalous non-monotonic relation with respect to BTO contents. Interestingly, our results predict the (0 1 1) superlattices can enhance the piezoelectric coefficient e ₃₃ with a maximum value at ~67% BTO concentration. This result suggests a potential avenue to design high performance piezoelectric materials with less Pb contents. In-depth analysis reveals the B-site Ti cation as the origin for the enhanced e ₃₃ value, which implies the potential of B-site cation engineering in perovskite heterostructure designs.

Effect of Nb concentration on the spin-orbit coupling strength in Nb-doped SrTiO3 epitaxial thin films

Several oxide materials have attracted much interest for the application in spintronic devices due to unusual properties originating from the strongly correlated orbital and spin degrees of freedom. One missing part in oxide spintronics is a good spin channel featured by strong spin-orbit coupling (SOC) which enables an efficient control of the electron’s spin. We have systematically investigated the dependence of the SOC strength of Sr(Nb_xTi_1−x)O₃ thin films on Nb concentration (n_Nb = 2~20 at. %) as a deeper exploration of a recent finding of the strong SOC in a heavily Nb-doped SrTiO₃ (Sr(Nb_0.2Ti_0.8)O₃) epitaxial film. Apart from a finding of a proportionality of the SOC to n_Nb, we have observed an intriguing temperature dependence of the SOC strength and the anisotropic magnetoresistance (MR) in the intermediate n_Nb region. These phenomena are associated with the temperature dependence of Landé g-factor and the change of the band structure, which is consistent with the result of density functional theory (DFT) calculation.

Promises, Challenges, and Recent Progress of Inorganic Solid-State Electrolytes for All-Solid-State Lithium Batteries

All-solid-state lithium batteries (ASSLBs) have the potential to revolutionize battery systems for electric vehicles due to their benefits in safety, energy density, packaging, and operable temperature range. As the key component in ASSLBs, inorganic lithium-ion-based solid-state electrolytes (SSEs) have attracted great interest, and advances in SSEs are vital to deliver the promise of ASSLBs. Herein, a survey of emerging SSEs is presented, and ion-transport mechanisms are briefly discussed. Techniques for increasing the ionic conductivity of SSEs, including substitution and mechanical strain treatment, are highlighted. Recent advances in various classes of SSEs enabled by different preparation methods are described. Then, the issues of chemical stabilities, electrochemical compatibility, and the interfaces between electrodes and SSEs are focused on. A variety of research addressing these issues is outlined accordingly. Given their importance for next-generation battery systems and transportation style, a perspective on the current challenges and opportunities is provided, and suggestions for future research directions for SSEs and ASSLBs are suggested.

Tuning Interfacial Magnetic Ordering via Polarization Control in Ferroelectric SrTiO3/PbTiO3 Heterostructure

The electromagnetic properties at the interface of heterostructure are sensitive to the interfacial crystal structure and external field. For example, the two-dimensional magnetic states at the interface of LaAlO₃/SrTiO₃ are discovered and can further be controlled by electric field. Here, we study two types of heterostructures, TiO₂/PbTiO₃ and SrTiO₃/PbTiO₃, using first-principle electronic structure calculations. We find that the ferroelectric polarization discontinuity at the interface leads to partially occupied Ti 3d states and the magnetic moments. The magnitude of the magnetic moments and the ground-state magnetic coupling are sensitive to the polarization intensity of PbTiO₃. As the ferroelectric polarization of PbTiO₃ increases, the two heterostructures show different magnetic ordering that strongly depends on the electron occupation of the Ti t_2g orbitals. For the TiO₂/PbTiO₃ interface, the magnetic moments are mostly contributed by degenerated d _yz/d _xz orbitals of interfacial Ti atoms and the neighboring interfacial Ti atoms form ferromagnetic coupling. For SrTiO₃/PbTiO₃ interface, the interfacial magnetic moments are mainly contributed by occupied d _xy orbital because of the increased polarization intensity, and as the electron occupation increases, there exists a transition of the magnetic coupling between neighboring Ti atoms from ferromagnetism to antiferromagnetism via the superexchange interaction. Our study suggests that manipulating the polarization intensity is one effective way to control interfacial magnetic ordering in the perovskite oxide heterostructures.

Domain alignment within ferroelectric/dielectric PbTiO3/SrTiO3 superlattice nanostructures

The ferroelectric domain pattern within lithographically defined PbTiO₃/SrTiO₃ ferroelectric/dielectric heteroepitaxial superlattice nanostructures is strongly influenced by the edges of the structures. Synchrotron X-ray nanobeam diffraction reveals that the spontaneously formed 180° ferroelectric stripe domains exhibited by such superlattices adopt a configuration in rectangular nanostructures in which domain walls are aligned with long patterned edges. The angular distribution of X-ray diffuse scattering intensity from nanodomains indicates that domains are aligned within an angular range of approximately 20° with respect to the edges. Computational studies based on a time-dependent Landau-Ginzburg-Devonshire model show that the preferred direction of the alignment results from lowering of the bulk and electrostrictive contributions to the free energy of the system due to the release of the lateral mechanical constraint. This unexpected alignment appears to be intrinsic and not a result of distortions or defects caused by the patterning process. Our work demonstrates how nanostructuring and patterning of heteroepitaxial superlattices allow for pathways to create and control ferroelectric structures that may appear counterintuitive.

Interface-induced multiferroism by design in complex oxide superlattices

Interfaces between materials present unique opportunities for the discovery of intriguing quantum phenomena. Here, we explore the possibility that, in the case of superlattices, if one of the layers is made ultrathin, unexpected properties can be induced between the two bracketing interfaces. We pursue this objective by combining advanced growth and characterization techniques with theoretical calculations. Using prototype La_2/3Sr_1/3MnO₃ (LSMO)/BaTiO₃ (BTO) superlattices, we observe a structural evolution in the LSMO layers as a function of thickness. Atomic-resolution EM and spectroscopy reveal an unusual polar structure phase in ultrathin LSMO at a critical thickness caused by interfacing with the adjacent BTO layers, which is confirmed by first principles calculations. Most important is the fact that this polar phase is accompanied by reemergent ferromagnetism, making this system a potential candidate for ultrathin ferroelectrics with ferromagnetic ordering. Monte Carlo simulations illustrate the important role of spin-lattice coupling in LSMO. These results open up a conceptually intriguing recipe for developing functional ultrathin materials via interface-induced spin-lattice coupling.

Stability of Polar Vortex Lattice in Ferroelectric Superlattices

A novel mesoscale state comprising of an ordered polar vortex lattice has been demonstrated in ferroelectric superlattices of PbTiO₃/SrTiO₃. Here, we employ phase-field simulations, analytical theory, and experimental observations to evaluate thermodynamic conditions and geometric length scales that are critical for the formation of such exotic vortex states. We show that the stability of these vortex lattices involves an intimate competition between long-range electrostatic, long-range elastic, and short-range polarization gradient-related interactions leading to both an upper and a lower bound to the length scale at which these states can be observed. We found that the critical length is related to the intrinsic domain wall width, which could serve as a simple intuitive design rule for the discovery of novel ultrafine topological structures in ferroic systems.

Interfacial Multiferroics of TiO2/PbTiO3 Heterostructure Driven by Ferroelectric Polarization Discontinuity

Novel phenomena appear when two different oxide materials are combined together to form an interface. For example, at the interface of LaAlO₃/SrTiO₃, two-dimensional conductive states form to avoid the polar discontinuity, and magnetic properties are found at such an interface. In this work, we propose a new type of interface between two nonmagnetic and nonpolar oxides that could host a magnetic state, where it is the ferroelectric polarization discontinuity instead of the polar discontinuity that leads to the charge transfer, forming the interfacial magnetic state. As a concrete example, we investigate by first-principles calculations the heterostructures made of ferroelectric perovskite oxide PbTiO₃ and nonferroelectric polarized oxide TiO₂. We show that charge is transferred to the interfacial layer forming an interfacial ferromagnetic ordering that may persist up to room temperature. Especially, the strong coupling between bulk ferroelectric polarization and interface ferromagnetism represents a new type of magnetoelectric effect, which provides an ideal platform for exploring the intriguing interfacial multiferroics. The findings here are important not only for fundamental science but also for promising applications in nanoscale electronics and spintronics.

New modalities of strain-control of ferroelectric thin films

Ferroelectrics, with their spontaneous switchable electric polarization and strong coupling between their electrical, mechanical, thermal, and optical responses, provide functionalities crucial for a diverse range of applications. Over the past decade, there has been significant progress in epitaxial strain engineering of oxide ferroelectric thin films to control and enhance the nature of ferroelectric order, alter ferroelectric susceptibilities, and to create new modes of response which can be harnessed for various applications. This review aims to cover some of the most important discoveries in strain engineering over the past decade and highlight some of the new and emerging approaches for strain control of ferroelectrics. We discuss how these new approaches to strain engineering provide promising routes to control and decouple ferroelectric susceptibilities and create new modes of response not possible in the confines of conventional strain engineering. To conclude, we will provide an overview and prospectus of these new and interesting modalities of strain engineering helping to accelerate their widespread development and implementation in future functional devices.

Enhanced polarization by the coherent heterophase interface between polar and non-polar phases

A piezoelectric composite containing the ferroelectric polar (Bi(Na0.8K0.2)0.5TiO3: f-BNKT) and the non-polar (0.94Bi(Na0.75K0.25)0.5TiO3-0.06BiAlO3: BNKT-BA) phases exhibits synergetic properties which combine the beneficial aspects of each phase, i.e., the high saturated polarization (Ps) of the polar phase and the low coercive field (Ec) of the non-polar phase. To understand the origin of such a fruitful outcome from this type of polar/non-polar heterophase structure, comprehensive studies are conducted, including transmission electron microscopy (TEM) and finite element method (FEM) analyses. The TEM results show that the polar/non-polar composite has a core/shell structure in which the polar phase (core) is surrounded by a non-polar phase (shell). In situ electrical biasing TEM experiments visualize that the ferroelectric domains in the polar core are aligned even under an electric field of ∼1 kV mm(-1), which is much lower than its intrinsic coercive field (∼3 kV mm(-1)). From the FEM analyses, we can find that the enhanced polarization of the polar phase is promoted by an additional internal field at the phase boundary which originates from the preferential polarization of the relaxor-like non-polar phase. From the present study, we conclude that the coherent interface between polar and non-polar phases is a key factor for understanding the enhanced piezoelectric properties of the composite.

In situ X-ray diffraction and the evolution of polarization during the growth of ferroelectric superlattices

In epitaxially strained ferroelectric thin films and superlattices, the ferroelectric transition temperature can lie above the growth temperature. Ferroelectric polarization and domains should then evolve during the growth of a sample, and electrostatic boundary conditions may play an important role. In this work, ferroelectric domains, surface termination, average lattice parameter and bilayer thickness are simultaneously monitored using in situ synchrotron X-ray diffraction during the growth of BaTiO3/SrTiO3 superlattices on SrTiO3 substrates by off-axis radio frequency magnetron sputtering. The technique used allows for scan times substantially faster than the growth of a single layer of material. Effects of electric boundary conditions are investigated by growing the same superlattice alternatively on SrTiO3 substrates and 20 nm SrRuO3 thin films on SrTiO3 substrates. These experiments provide important insights into the formation and evolution of ferroelectric domains when the sample is ferroelectric during the growth process.

Interplay of coupling between strain and rotation in ferroelectric SrZrO3/SrTiO3 superlattices

The combination of oxygen octahedral rotation and epitaxial strain provides a unique opportunity to tune the ferroelectric properties of perovskite superlattices. Here, through first-principles calculations, we demonstrate that the oxygen octahedral rotation predominates the ground state and ferroelectric properties of SrZrO3/SrTiO3 superlattices. The predicted ground state combines the ferroelectric distortion and antiferrodistortive modes simultaneously. The structure-strain phase diagrams of the superlattices are calculated with and without octahedral rotations, which elucidate the interplay of coupling between epitaxial strain and octahedral rotation. It is found that the presence of octahedral rotation not only lowers the energy but also changes the sequence of phase transition from c-r-aa to c-r, in which the coupling of rotation and strain induces an out-of-plane polarization that transforms aa-phase into r-phase.

Understanding ferroelectricity in layered perovskites: new ideas and insights from theory and experiments

Recent theoretical and experimental studies showing how polar structures or ferroelectricity arise in layered perovskites are highlighted.

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

Ultrathin ferroelectric films are of increasing interests these years, owing to the need of device miniaturization and their wide spectrum of appealing properties. Recent advanced deposition methods and characterization techniques have largely broadened the scope of experimental researches of ultrathin ferroelectric films, pushing intensive property study and promising device applications. This review aims to cover state-of-the-art experimental works of ultrathin ferroelectric films, with a comprehensive survey of growth methods, characterization techniques, important phenomena and properties, as well as device applications. The strongest emphasis is on those aspects intimately related to the unique phenomena and physics of ultrathin ferroelectric films. Prospects and challenges of this field also have been highlighted.

Extrinsic and intrinsic charge trapping at the graphene/ferroelectric interface

The interface between graphene and the ferroelectric superlattice PbTiO3/SrTiO3 (PTO/STO) is studied. Tuning the transition temperature through the PTO/STO volume fraction minimizes the adorbates at the graphene/ferroelectric interface, allowing robust ferroelectric hysteresis to be demonstrated. "Intrinsic" charge traps from the ferroelectric surface defects can adversely affect the graphene channel hysteresis and can be controlled by careful sample processing, enabling systematic study of the charge trapping mechanism.

Reversible modulation of orbital occupations via an interface-induced polar state in metallic manganites

The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering in metal oxides. Here, we use ab initio calculations to show that reversibly modulating the orbital populations on Mn atoms can be achieved at ferroelectric/manganite interfaces by the presence of ferroelectric polarization on the nanoscale. The change in orbital occupation can be as large as 10%, greatly exceeding that of bulk manganites. This reversible orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use epitaxial thin film growth and scanning transmission electron microscopy to verify this key interfacial polar distortion and discuss the potential of reversible control of orbital polarization via nanoscale ferroelectrics.

Synthesis of New-structured PbTiO3 Nanowires With Reversible Bending Properties

One-dimensional PbTiO3 nanowires 40–500 nm in diameter and ~400 μm in length were synthesized via a hydrothermal strategy and characterized by X-ray diffraction, electron backscatter diffraction, scanning electron microscopy, and transmission electron microscopy. The results show that the PbTiO3 nanowires exhibit a new acicular crystal structure, which is a tetragonal superstructure composed of a large unit cell of 40 atoms (Pb : Ti : O = 1 : 1 : 3) with a = 12.35 Å, c = 3.83 Å. The PbTiO3 has a feature of unidirectional bending when observed through transmission electron microscopy several times. The bending can be controlled by the electron beam intensity in transmission electron microscopy and the bending process is reversible. Moreover, a possible mechanism for the bending behaviour was also studied, which indicates that macroscopic polarization is in the {110} plane and the direction is not consistent with the electric field, giving the possible driving force for the bending.

Unexpected crystal and domain structures and properties in compositionally graded PbZr(1-x)Ti(x)O3 thin films

Synthesis of compositionally graded versions of PbZr(1-x)Ti(x)O3 thin films results in unprecedented strains (as large as ≈4.5 × 10(5) m(-1)) and correspondingly unexpected crystal structures, ferroelectric domain structures, and properties. This includes the observation of built-in electric fields in films as large as 200 kV/cm. Compositional and strain gradients could represent a new direction of strain-control of materials.

Prospects for Ferroelectrics: 2012–2022

A review is given of more than a dozen subtopics within the general study of ferroelectrics, with emphasis upon controversies, unsolved problems, and prospects for the next decade, including pure science and industrial applications. The review emphasizes work over the past two years, from 2010 to 2012.

Engineering polarization rotation in a ferroelectric superlattice

A key property that drives research in ferroelectric perovskite oxides is their strong piezoelectric response in which an electric field is induced by an applied strain, and vice versa for the converse piezoelectric effect. We have achieved an experimental enhancement of the piezoelectric response and dielectric tunability in artificially layered epitaxial PbTiO(3)/CaTiO(3) superlattices through an engineered rotation of the polarization direction. As the relative layer thicknesses within the superlattice were changed from sample to sample we found evidence for polarization rotation in multiple x-ray diffraction measurements. Associated changes in functional properties were seen in electrical measurements and piezoforce microscopy. The results demonstrate a new approach to inducing polarization rotation under ambient conditions in an artificially layered thin film.

Ferroelectric PbTiO3/SrRuO3 superlattices with broken inversion symmetry

We have fabricated PbTiO3/SrRuO3 superlattices with ultrathin SrRuO3 layers. Because of the superlattice geometry, the samples show a large anisotropy in their electrical resistivity, which can be controlled by changing the thickness of the PbTiO3 layers. Therefore, along the ferroelectric direction, SrRuO3 layers can act as dielectric, rather than metallic, elements. We show that, by reducing the concentration of PbTiO3, an increasingly important effect of polarization asymmetry due to compositional inversion symmetry breaking occurs. The results are significant as they represent a new class of ferroelectric superlattices, with a rich and complex phase diagram. By expanding our set of materials we are able to introduce new behaviors that can only occur when one of the materials is not a perovskite titanate. Here, compositional inversion symmetry breaking in bicolor superlattices, due to the combined variation of A and B site ions within the superlattice, is demonstrated using a combination of experimental measurements and first principles density functional theory.

Electrostatic coupling and local structural distortions at interfaces in ferroelectric/paraelectric superlattices

The performance of ferroelectric devices is intimately entwined with the structure and dynamics of ferroelectric domains. In ultrathin ferroelectrics, ordered nanodomains arise naturally in response to the presence of a depolarizing field and give rise to highly inhomogeneous polarization and structural profiles. Ferroelectric superlattices offer a unique way of engineering the desired nanodomain structure by modifying the strength of the electrostatic interactions between different ferroelectric layers. Through a combination of X-ray diffraction, transmission electron microscopy, and first-principles calculations, the electrostatic coupling between ferroelectric layers is studied, revealing the existence of interfacial layers of reduced tetragonality attributed to inhomogeneous strain and polarization profiles associated with the domain structure.

Interplay of couplings between antiferrodistortive, ferroelectric, and strain degrees of freedom in monodomain PbTiO3/SrTiO3 superlattices

We report first-principles calculations on the coupling between epitaxial strain, polarization, and oxygen octahedra rotations in monodomain (PbTiO(3))(n)/(SrTiO(3))(n) superlattices. We show how the interplay between (i) the epitaxial strain and (ii) the electrostatic conditions can be used to control the orientation of the main axis of the system. The electrostatic constrains at the interface facilitate the polarization rotation and, as a consequence, we predict large piezoelectric responses at epitaxial strains smaller than those required considering only strain effects. In addition, ferroelectric (FE) and antiferrodistortive (AFD) modes are strongly coupled. Usual steric arguments cannot explain this coupling and a covalent model is proposed to account for it. The energy gain due to the FE-AFD coupling decreases with the periodicity of the superlattice, becoming negligible for n ≥ 3.

Nanosecond dynamics of ferroelectric/dielectric superlattices

The nanosecond response of a PbTiO(3)/SrTiO(3) ferroelectric/dielectric superlattice to applied electric fields is closely linked to the dynamics of striped domains of the remnant polarization. The intensity of domain satellite reflections observed with time-resolved x-ray microdiffraction decays in 5-100 ns depending on the magnitude of the electric field. The piezoelectric response of the superlattice within stripe domains is strongly suppressed due to electromechanical clamping between adjacent regions of opposite polarization. Regions of the superlattice that have been switched into a uniform polarization state by the applied electric field, however, exhibit piezoelectricity during the course of the switching process. We propose a switching model different from previous models of the switching of superlattices, based instead on a spatially heterogeneous transformation between striped and uniform polarization states.

Quantification of internal electric fields and local polarization in ferroelectric superlattices

Oxide heterostructure superlattices constitute a new family of materials with tunable ferroelectric properties. While theoretical models predict the presence of nanosized ferroelectric domains in these films, they had not been observed as the magnitude of the response functions challenges the limits of experimental detection. Here, a new protocol in a precise variant of piezoforce microscopy is used to image domains in BaTiO(3)/SrTiO(3) superlattices. Comparison of experimentally determined polarization to predictions of phase-field calculations is in quantitative agreement. Additionally, a combination of theory and experiment is used to determine the magnitude of internal electric field within the thin film, in a procedure that can be generalized to all ferroelectric films.

Atomic-scale compensation phenomena at polar interfaces

The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density-functional theory to show how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by an interfacial charge generated, for example, by oxygen vacancies.

Theory of giant electromechanical response from ferroelectric bilayers with polydomain structures due to interlayer and interdomain coupling

The effect of interdomain ferroelastic coupling in ferroic multilayers is investigated theoretically. Specifically, we use nonlinear thermodynamics to analyze a heteroepitaxial ferroelectric PbZrxTi1-xO3 (PZT) bilayer consisting of (001) tetragonal (T) PZT and (001) rhombohedral (R) PZT films. We predict for certain misfit strain regimes that interlayer and interdomain interactions lead to an adaptive domain structure in both the T and R layers and result in significant enhancements in the piezoelectricity compared to single-layer films. Our results demonstrate that electrostatic, magnetostatic, and elastic interactions in ferroic multilayers can be a generic route to generate ultrahigh susceptibilities.

First-principles density functional study of polarization-strain coupling in bismuth titanate

The influence of uniaxial and biaxial strain (± 3%) on the spontaneous polarization of orthorhombic bismuth titanate (Bi(4)Ti(3)O(12)) is investigated using a first-principles density functional approach. Born effective charges are obtained using linear response theory. In unstrained bismuth titanate the calculated principal component of polarization along the a axis (P(a)) is 0.46 C m(-2), which is close to the experimental measurement of 0.50 C m(-2). Uniaxial strain along this axis is more effective than along the c axis in improving this component of polarization, by up to 17% for a tensile strain of 3%. Compressive strain along the c axis also enhances P(a) but to a lesser degree. Biaxial strain has a more significant effect on P(a) than uniaxial strain. A simultaneous uniform tensile strain of 3% along the a and b axes enhances the principal component of polarization by 39% while a similar strain along the c and b axes produces an enhancement of 8%. These effects are explained in terms of the off-centre displacements of ions and have implications for device applications of bismuth titanate which use epitaxially strained thin-film heterostructures.

Piezoelectricity in the dielectric component of nanoscale dielectric-ferroelectric superlattices

The origin of the functional properties of complex oxide superlattices can be resolved using time-resolved synchrotron x-ray diffraction into contributions from the component layers making up the repeating unit. The CaTiO3 layers of a CaTiO3/BaTiO3 superlattice have a piezoelectric response to an applied electric field, consistent with a large continuous polarization throughout the superlattice. The overall piezoelectric coefficient at large strains, 54  pm/V, agrees with first-principles predictions in which a tetragonal symmetry is imposed on the superlattice by the SrTiO3 substrate.