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Zhang C, Ding S, Tian Y, Wang J, Chen Y, Zhao T, Hu F, Hu W, Shen B. The In Situ Optimization of Spinterface in Polymer Spin Valve by Electronic Phase Separated Oxides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303375. [PMID: 37264712 DOI: 10.1002/smll.202303375] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Revised: 05/23/2023] [Indexed: 06/03/2023]
Abstract
Tailoring the interface between organic semiconductor (OSC) and ferromagnetic (FM) electrodes, that is, the spinterface, offers a promising way to manipulate and optimize the magnetoresistance (MR) ratio of the organic spin valve (OSV) devices. However, the non-destructive in situ regulation method of spinterface is seldom reported, limiting its theoretical research and further application in organic spintronics. (La2/3 Pr1/3 )5/8 Ca3/8 MnO3 (LPCMO), a recently developed FM material, exhibits a strong electronic phase separation (EPS) property, and can be employed as an effective in situ spinterface adjuster. Herein, we fabricated a LPCMO-based polymer spin valve with a vertical configuration of LPCMO/poly(3-hexylthiophene-2,5-diyl) (P3HT)/Co, and emphasized the important role of LPCMO/P3HT spinterface in MR regulation. A unique competitive spin-scattering mechanism generated by the EPS characteristics of LPCMO inside the polymer spin valve was discovered by abstracting the anomalous non-monotonic MR value as a function of pre-set magnetic field (Bpre ) and temperature (T). Particularly, a record-high MR ratio of 93% was achieved in polymer spin valves under optimal conditions. These findings highlight the importance of interdisciplinary research between organic spintronics and EPS oxides and offer a novel scenario for multi-level storage via spinterface manipulation.
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Affiliation(s)
- Cheng Zhang
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shuaishuai Ding
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
| | - Yuan Tian
- School of Physics & Electronics, Hunan University, Hunan, 410082, China
| | - Jing Wang
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yunzhong Chen
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tongyun Zhao
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fengxia Hu
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
| | - Baogen Shen
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou, Jiangxi, 341000, China
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2
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Luo Z, Song X, Liu X, Lu X, Yao Y, Zeng J, Li Y, He D, Zhao H, Gao L, Yu Z, Niu W, Sun H, Xu Y, Liu S, Qin W, Zhao Q. Revealing the key role of molecular packing on interface spin polarization at two-dimensional limit in spintronic devices. SCIENCE ADVANCES 2023; 9:eade9126. [PMID: 37018394 PMCID: PMC10075958 DOI: 10.1126/sciadv.ade9126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 03/03/2023] [Indexed: 06/19/2023]
Abstract
Understanding spinterfaces between magnetic metals and organic semiconductors is essential to unlock the great potentials that organic materials host for spintronic applications. Although plenty of efforts have been devoted to studying organic spintronic devices, exploring the role of metal/molecule spinterfaces at two-dimensional limit remains challenging because of excessive disorders and traps at the interfaces. Here, we demonstrate atomically smooth metal/molecule interfaces through nondestructively transferring magnetic electrodes on epitaxial grown single-crystalline layered organic films. Using such high-quality interfaces, we investigate spin injection of spin-valve devices based on organic films of different layers, in which molecules are packed in different manners. We find that the measured magnetoresistance and the estimated spin polarization increase markedly for bilayer devices compared with their monolayer counterparts. These observations reveal the key role of molecular packing on spin polarization, which is supported by density functional theory calculations. Our findings provide promising routes toward designing spinterfaces for organic spintronic devices.
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Affiliation(s)
- Zhongzhong Luo
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiangxiang Song
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China
| | - Xiaolong Liu
- School of New Energy, North China Electric Power University, Beijing 102206, China
| | - Xiangqian Lu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yu Yao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Junpeng Zeng
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yating Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Daowei He
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Huijuan Zhao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Li Gao
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhihao Yu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Wei Niu
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Huabin Sun
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yong Xu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
| | - Shujuan Liu
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Wei Qin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Qiang Zhao
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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3
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Zhu Y, Jiang Q, Zhang J, Ma Y. Recent Progress of Organic Semiconductor Materials in Spintronics. Chem Asian J 2023; 18:e202201125. [PMID: 36510771 DOI: 10.1002/asia.202201125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2022] [Revised: 12/12/2022] [Accepted: 12/12/2022] [Indexed: 12/15/2022]
Abstract
Spintronics, a new discipline focusing on the spin-dependent transport process of electrons, has been developing rapidly. Spin valves are the most significant carriers of spintronics utilizing the spin freedom of electrons. It is expected to pierce "Moore's Law" and become the core component in processors of the next generation. Organic semiconductors advance in their adjustable band gap, weak spin-orbit coupling and hyperfine interaction, excellent film-forming property, having enormous promise for spin valves. Here, the principle of spin valves is introduced, and the history and progress in organic spin injection and transport materials are summarized. Then we analyze the influence of spinterface on device performance and introduce reliable methods of constructing organic spin valves. Finally, the challenges for spin valves are discussed, and the future is proposed. We aim to draw the attention of researchers to organic spin valves and promote further research in spintronics through this paper.
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Affiliation(s)
- Yanuo Zhu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, 381 Wushan Road, Guangzhou, Guangdong, 510640, P. R. China
| | - Qinglin Jiang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, 381 Wushan Road, Guangzhou, Guangdong, 510640, P. R. China
| | - Jiang Zhang
- Department of Physics, South China University of Technology 381 Wushan Road, Guangzhou, Guangdong, 510640, P. R. China
| | - Yuguang Ma
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, 381 Wushan Road, Guangzhou, Guangdong, 510640, P. R. China
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4
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Naskar S, Saghatchi A, Mujica V, Herrmann C. Common Trends of Chiral Induced Spin Selectivity and Optical Dichroism with Varying Helix Pitch: A First‐Principles Study. Isr J Chem 2022. [DOI: 10.1002/ijch.202200053] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Sumit Naskar
- Department of Chemistry University of Hamburg, Harbor Bldg. 610 Luruper Chaussee 149 22761 Hamburg Germany
- The Hamburg Centre for Ultrafast Imaging Luruper Chaussee 149 Hamburg 22761 Germany
| | - Aida Saghatchi
- Department of Chemistry University of Hamburg, Harbor Bldg. 610 Luruper Chaussee 149 22761 Hamburg Germany
| | - Vladimiro Mujica
- School for Molecular Science Arizona State University Arizona, U.S.A
- Kimika Fakultatea Euskal Herriko Unibertsitatea UPV/EHU Manuel de Lardizabal Pasealekua 3 20018 Donostia, Euskadi Spain
| | - Carmen Herrmann
- Department of Chemistry University of Hamburg, Harbor Bldg. 610 Luruper Chaussee 149 22761 Hamburg Germany
- The Hamburg Centre for Ultrafast Imaging Luruper Chaussee 149 Hamburg 22761 Germany
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5
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Martin P, Dlubak B, Mattana R, Seneor P, Martin MB, Henner T, Godel F, Sander A, Collin S, Chen L, Suffit S, Mallet F, Lafarge P, Della Rocca ML, Droghetti A, Barraud C. Combined spin filtering actions in hybrid magnetic junctions based on organic chains covalently attached to graphene. NANOSCALE 2022; 14:12692-12702. [PMID: 35993375 DOI: 10.1039/d2nr01917e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We present a bias-controlled spin-filtering mechanism in spin-valves including a hybrid organic chain/graphene interface. Wet growth conditions of oligomeric molecular chains would usually lead, during standard CMOS-compatible fabrication processes, to the quenching of spintronics properties of metallic spin sources due to oxidation. We demonstrate by X-ray photoelectron spectroscopy that the use of a protective graphene layer fully preserves the metallic character of the ferromagnetic surface and thus its capability to deliver spin polarized currents. We focus here on a small aromatic chain of controllable lengths, formed by nitrobenzene monomers and derived from the commercial 4-nitrobenzene diazonium tetrafluoroborate, covalently attached to the graphene passivated spin sources thanks to electroreduction. A unique bias dependent switch of the spin signal is then observed in complete spin valve devices, from minority to majority spin carriers filtering. First-principles calculations are used to highlight the key role played by the spin-dependent hybridization of electronic states present at the different interfaces. Our work is a first step towards the exploration of spin transport using different functional molecular chains. It opens the perspective of atomic tailoring of magnetic junction devices towards spin and quantum transport control, thanks to the flexibility of ambient electrochemical surface functionalization processes.
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Affiliation(s)
- Pascal Martin
- Université Paris Cité, Laboratoire ITODYS, CNRS, UMR 7086, 75013 Paris, France
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France.
| | - Richard Mattana
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France.
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France.
| | - Marie-Blandine Martin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France.
| | - Théo Henner
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, UMR 7162, 75013 Paris, France.
| | - Florian Godel
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France.
| | - Anke Sander
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France.
| | - Sophie Collin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France.
| | - Linsai Chen
- Université Paris Cité, Laboratoire ITODYS, CNRS, UMR 7086, 75013 Paris, France
| | - Stéphan Suffit
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, UMR 7162, 75013 Paris, France.
| | - François Mallet
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, UMR 7162, 75013 Paris, France.
| | - Philippe Lafarge
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, UMR 7162, 75013 Paris, France.
| | - Maria Luisa Della Rocca
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, UMR 7162, 75013 Paris, France.
| | | | - Clément Barraud
- Université Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, UMR 7162, 75013 Paris, France.
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6
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Zlobin IS, Nelyubina YV, Novikov VV. Molecular Compounds in Spintronic Devices: An Intricate Marriage of Chemistry and Physics. Inorg Chem 2022; 61:12919-12930. [PMID: 35930627 DOI: 10.1021/acs.inorgchem.2c00859] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Spintronics, a flourishing new field of microelectronics, uses the electron spin for reading and writing information in modern computers and other spintronic devices with a low power consumption and high reliability. In a quest to increase the productivity of such devices, the use of molecular materials as a spacer layer allowed them to perform equally well or even better than conventional all-inorganic heterostructures from metals, alloys, or inorganic semiconductors. In this review, we survey various classes of chemical compounds that have already been tested for this purpose─from organic compounds and coordination complexes to organic-inorganic hybrid materials─since the creation of the first molecule-based spintronic device in 2002. Although each class has its advantages, drawbacks, and applications in molecular spintronics, together they allowed nonchemists to gain insights into spin-related effects and to propose new concepts in the design and fabrication of highly efficient spintronic devices. Other molecular compounds that chemistry could offer in great numbers may soon emerge as suitable spacers or even electrodes in flexible magnetic field sensors, nonvolatile memories, and multifunctional spintronic devices.
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Affiliation(s)
- Ivan S Zlobin
- A.N. Nesmeyanov Institute of Organoelement Compounds of Russian Academy of Sciences (INEOS RAS), Vavilova Str. 28, Moscow 119991, Russia.,Moscow Institute of Physics and Technology (National Research University), Institutskiy Per. 9, Dolgoprudny, Moscow Region 141700, Russia
| | - Yulia V Nelyubina
- A.N. Nesmeyanov Institute of Organoelement Compounds of Russian Academy of Sciences (INEOS RAS), Vavilova Str. 28, Moscow 119991, Russia.,Moscow Institute of Physics and Technology (National Research University), Institutskiy Per. 9, Dolgoprudny, Moscow Region 141700, Russia
| | - Valentin V Novikov
- A.N. Nesmeyanov Institute of Organoelement Compounds of Russian Academy of Sciences (INEOS RAS), Vavilova Str. 28, Moscow 119991, Russia.,Moscow Institute of Physics and Technology (National Research University), Institutskiy Per. 9, Dolgoprudny, Moscow Region 141700, Russia
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7
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Shang Z, Liu T, Yang Q, Cui S, Xu K, Zhang Y, Deng J, Zhai T, Wang X. Chiral-Molecule-Based Spintronic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203015. [PMID: 35836101 DOI: 10.1002/smll.202203015] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2022] [Revised: 06/19/2022] [Indexed: 06/15/2023]
Abstract
Spintronics and molecular chemistry have achieved remarkable achievements separately. Their combination can apply the superiority of molecular diversity to intervene or manipulate the spin-related properties. It inevitably brings in a new type of functional devices with a molecular interface, which has become an emerging field in information storage and processing. Normally, spin polarization has to be realized by magnetic materials as manipulated by magnetic fields. Recently, chiral-induced spin selectivity (CISS) was discovered surprisingly that non-magnetic chiral molecules can generate spin polarization through their structural chirality. Here, the recent progress of integrating the strengths of molecular chemistry and spintronics is reviewed by introducing the experimental results, theoretical models, and device performances of the CISS effect. Compared to normal ferromagnetic metals, CISS originating from a chiral structure has great advantages of high spin polarization, excellent interface, simple preparation process, and low cost. It has the potential to obtain high efficiency of spin injection into metals and semiconductors, getting rid of magnetic fields and ferromagnetic electrodes. The physical mechanisms, unique advantages, and device performances of CISS are sequentially clarified, revealing important issues to current scientific research and industrial applications. This mini-review points out a key technology of information storage for future spintronic devices without magnetic components.
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Affiliation(s)
- Zixuan Shang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Tianhan Liu
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Qianqian Yang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Shuainan Cui
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Kailin Xu
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Yu Zhang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Jinxiang Deng
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Tianrui Zhai
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Xiaolei Wang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
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8
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Sarkar S, Maiti SK. Magnetoresistive effect in a quantum heterostructure with helical spacer: interplay between helicity and external electric field. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:305301. [PMID: 35550567 DOI: 10.1088/1361-648x/ac6f3d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2022] [Accepted: 05/12/2022] [Indexed: 06/15/2023]
Abstract
Giant magnetoresistive effect in a multi-layered structure not only depends on the properties of magnetic systems, it also strongly depends on the type of non-magnetic spacer that is clamped between magnetic layers. In this work, we critically investigate the role of a helical spacer in presence of a transverse electric field. Two kinds of helical geometries, possessing short-range (SRH) and long-range hopping (LRH) of electrons, are taken into account mimicking single-stranded DNA and protein molecules respectively. Sandwiching the magnetic-non-magnetic-magnetic quantum heterostructure between source and drain contact electrodes, we investigate the properties of giant magnetoresistance (GMR) following the Green's function formalism within a tight-binding framework. The interplay between SRHs and LRHs of electrons provides several nontrivial signatures in GMR, especially in the presence of transverse electric field, as it makes the system a deterministic disordered one, similar to the well-known Aubry-Andre-Harper from. The famous gapped nature of energy band structure in presence of cosine modulation leads to high degree of magnetoresistance at multiple Fermi energies, compared to the traditional spacers. The magnetoresistive effect can be monitored selectively by adjusting the electric field strength and its direction. Comparing the results between the SRH and LRH cases, we find that the later one is more superior. Finally, to make the system more realistic we include the effect of dephasing. Our analysis may provide some fundamental aspects of designing electronic and spintronic devices based on magnetoresistive effect.
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Affiliation(s)
- Suparna Sarkar
- Physics and Applied Mathematics Unit, Indian Statistical Institute, 203 Barrackpore Trunk Road, Kolkata-700108, India
| | - Santanu K Maiti
- Physics and Applied Mathematics Unit, Indian Statistical Institute, 203 Barrackpore Trunk Road, Kolkata-700108, India
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9
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Ogata K, Nakayama Y, Xiao G, Kaiju H. Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions. Sci Rep 2021; 11:13807. [PMID: 34253744 PMCID: PMC8275788 DOI: 10.1038/s41598-021-93226-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2021] [Accepted: 06/15/2021] [Indexed: 11/09/2022] Open
Abstract
Magnetic tunnel junctions (MTJs) in the field of spintronics have received enormous attention owing to their fascinating spin phenomena for fundamental physics and potential applications. MTJs exhibit a large tunnel magnetoresistance (TMR) at room temperature. However, TMR depends strongly on the bias voltage, which reduces the magnitude of TMR. On the other hand, tunnel magnetocapacitance (TMC), which has also been observed in MTJs, can be increased when subjecting to a biasing voltage, thus exhibiting one of the most interesting spin phenomena. Here we report a large voltage-induced TMC beyond 330% in MgO-based MTJs, which is the largest value ever reported for MTJs. The voltage dependence and frequency characteristics of TMC can be explained by the newly proposed Debye-Fröhlich model using Zhang-sigmoid theory, parabolic barrier approximation, and spin-dependent drift diffusion model. Moreover, we predict that the voltage-induced TMC ratio could reach over 3000% in MTJs. It is a reality now that MTJs can be used as capacitors that are small in size, broadly ranged in frequencies and controllable by a voltage. Our theoretical and experimental findings provide a deeper understanding on the exact mechanism of voltage-induced AC spin transports in spintronic devices. Our research may open new avenues to the development of spintronics applications, such as highly sensitive magnetic sensors, high performance non-volatile memories, multi-functional spin logic devices, voltage controlled electronic components, and energy storage devices.
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Affiliation(s)
- Kentaro Ogata
- Faculty of Science and Technology, Keio University, Yokohama, Kanagawa, 223-8522, Japan
| | - Yusuke Nakayama
- Faculty of Science and Technology, Keio University, Yokohama, Kanagawa, 223-8522, Japan
| | - Gang Xiao
- Department of Physics, Brown University, Providence, RI, 02912, USA
| | - Hideo Kaiju
- Faculty of Science and Technology, Keio University, Yokohama, Kanagawa, 223-8522, Japan. .,Center for Spintronics Research Network, Keio University, Yokohama, Kanagawa, 223-8522, Japan.
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10
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Li J, Ma J, Ma Z, Zhao E, Du K, Guo J, Ling T. Spin Effect on Oxygen Electrocatalysis. ADVANCED ENERGY AND SUSTAINABILITY RESEARCH 2021. [DOI: 10.1002/aesr.202100034] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Affiliation(s)
- Jisi Li
- Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education Tianjin Key Laboratory of Composite and Functional Materials School of Materials Science and Engineering Tianjin University Tianjin 300072 China
| | - Jingjing Ma
- Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education Tianjin Key Laboratory of Composite and Functional Materials School of Materials Science and Engineering Tianjin University Tianjin 300072 China
| | - Ziang Ma
- Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education Tianjin Key Laboratory of Composite and Functional Materials School of Materials Science and Engineering Tianjin University Tianjin 300072 China
| | - Erling Zhao
- Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education Tianjin Key Laboratory of Composite and Functional Materials School of Materials Science and Engineering Tianjin University Tianjin 300072 China
| | - Kun Du
- Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education Tianjin Key Laboratory of Composite and Functional Materials School of Materials Science and Engineering Tianjin University Tianjin 300072 China
| | - Jiaxin Guo
- Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education Tianjin Key Laboratory of Composite and Functional Materials School of Materials Science and Engineering Tianjin University Tianjin 300072 China
| | - Tao Ling
- Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education Tianjin Key Laboratory of Composite and Functional Materials School of Materials Science and Engineering Tianjin University Tianjin 300072 China
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11
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Chen Y, Huang L, Chen H, Chen Z, Zhang H, Xiao Z, Hong W. Towards Responsive
Single‐Molecule
Device. CHINESE J CHEM 2021. [DOI: 10.1002/cjoc.202000420] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
Affiliation(s)
- Yaorong Chen
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University Xiamen Fujian 361005 China
| | - Longfeng Huang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University Xiamen Fujian 361005 China
| | - Hang Chen
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University Xiamen Fujian 361005 China
| | - Zhixin Chen
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University Xiamen Fujian 361005 China
| | - Hewei Zhang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University Xiamen Fujian 361005 China
| | - Zongyuan Xiao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University Xiamen Fujian 361005 China
| | - Wenjing Hong
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University Xiamen Fujian 361005 China
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12
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Avvisati G, Gargiani P, Mariani C, Betti MG. Tuning the Magnetic Coupling of a Molecular Spin Interface via Electron Doping. NANO LETTERS 2021; 21:666-672. [PMID: 33356332 DOI: 10.1021/acs.nanolett.0c04256] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Mastering the magnetic response of molecular spin interfaces by tuning the occupancy of the molecular orbitals, which carry the spin magnetic moment, can be accomplished by electron doping. We propose a viable route to control the magnetization direction and magnitude of a molecular spin network, in a graphene-mediated architecture, achieved via alkali doping of manganese phthalocyanine (MnPc) molecules assembled on cobalt intercalated under a graphene membrane. The antiparallel magnetic alignment of the MnPc molecules with the underlying Co layer can be switched to a ferromagnetic state by electron doping. Multiplet calculations unveil an enhanced magnetic state of the Mn centers with a 3/2 to 5/2 spin transition induced by alkali doping, as confirmed by the steepening of the hysteresis loops, with higher saturation magnetization values. This new molecular spin configuration can be aligned by an external field, almost independently from the hard-magnet substrate effectively behaving as a free magnetic layer.
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Affiliation(s)
- Giulia Avvisati
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro, 5 00185 Rome, Italy
| | - Pierluigi Gargiani
- ALBA Synchrotron Light Source, Carrer de la Llum, 2-26 08290 Barcelona, Spain
| | - Carlo Mariani
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro, 5 00185 Rome, Italy
| | - Maria Grazia Betti
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro, 5 00185 Rome, Italy
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13
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Manoj T, Kotha S, Paikaray B, Srideep D, Haldar A, Rao KV, Murapaka C. Giant spin pumping at the ferromagnet (permalloy) – organic semiconductor (perylene diimide) interface. RSC Adv 2021; 11:35567-35574. [PMID: 35493144 PMCID: PMC9043263 DOI: 10.1039/d1ra07349d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/02/2021] [Accepted: 10/21/2021] [Indexed: 01/05/2023] Open
Abstract
Pure spin current based devices have attracted great interest in recent days. Spin current injection into non-magnetic materials is essential for the design and development of such pure spin current based devices. In this context, organic semiconductors (OSCs) can be potential non-magnetic materials over widely explored heavy metals. This is due to the relatively low spin–orbit coupling of OSCs, which is essential to host the spin current with a large spin diffusion length and long spin-relaxation time. This research work demonstrates the harvesting of spin currents at the perylene diimide (PDI)/permalloy (Py) based OSC interface. The observed high linewidth broadening of 2.18 mT from the ferromagnetic resonance spectra indicates the presence of giant spin pumping from Py to PDI. The resultant spin-mixing conductance, 1.54 × 1018 m−2 quantifies the amount of spin current injected from Py to PDI, which is in a similar range to ferromagnet/heavy metals. The spin injection from permalloy into an adjacent perylene diimide (PDI) layer is demonstrated via ferromagnetic resonance associated linewidth broadening. The spin mixing conductance is found to be 1.54×1018 m−2 in a similar range to FM/heavy metal.![]()
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Affiliation(s)
- Talluri Manoj
- Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi-502285, Telangana, India
| | - Srinu Kotha
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi-502285, Telangana, India
| | - Bibekananda Paikaray
- Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi-502285, Telangana, India
| | - Dasari Srideep
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi-502285, Telangana, India
| | - Arabinda Haldar
- Department of Physics, Indian Institute of Technology Hyderabad, Kandi-502285, Telangana, India
| | - Kotagiri Venkata Rao
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi-502285, Telangana, India
| | - Chandrasekhar Murapaka
- Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi-502285, Telangana, India
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14
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Zhang L, Wang Y, Chang H. High Positive MR and Energy Band Structure of RuSb 2. MATERIALS 2020; 13:ma13143159. [PMID: 32679843 PMCID: PMC7412452 DOI: 10.3390/ma13143159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/06/2020] [Revised: 07/12/2020] [Accepted: 07/13/2020] [Indexed: 11/16/2022]
Abstract
A high positive magnetoresistance (MR), 78%, is observed at 2 K on the ab plane of the diamagnetic RuSb2+ semiconductor. On the ac plane, MR is 44% at 2 K, and about 7% at 300 K. MR at different temperatures do not follow the Kohler's rule. It suggests that the multiband effect plays a role on the carrier transportation. RuSb2+ is a semiconductor with both positive and negative carriers. The quantum interference effect with the weak localization correction lies behind the high positive MR at low temperature. Judged from the ultraviolet-visible spectra, it has a direct band gap of 1.29 eV. The valence band is 0.39 eV below the Fermi energy. The schematic energy band structure is proposed based on experimental results.
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15
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Zhang X, Tong J, Ruan L, Yao X, Zhou L, Tian F, Qin G. Interface hybridization and spin filter effect in metal-free phthalocyanine spin valves. Phys Chem Chem Phys 2020; 22:11663-11670. [DOI: 10.1039/d0cp00651c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Spin–orbit coupling has been regarded as the core interaction to determine the efficiency of spin conserved transport in semiconductor spintronics. Here, we show the spin filter effect should be responsible for the magnetoresistance of H2Pc device.
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Affiliation(s)
- Xianmin Zhang
- School of Material Science and Engineering
- Northeastern University
- Shenyang 110819
- China
- State Key Laboratory of Rolling and Automation
| | - Junwei Tong
- School of Material Science and Engineering
- Northeastern University
- Shenyang 110819
- China
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education)
| | - Liuxia Ruan
- School of Material Science and Engineering
- Northeastern University
- Shenyang 110819
- China
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education)
| | - Xiannian Yao
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education)
- Northeastern University
- Shenyang 110819
- China
| | - Lianqun Zhou
- Suzhou Institute of Biomedical, Engineering and Technology
- Chinese Academy of Sciences
- Suzhou 215163
- China
| | - Fubo Tian
- State Key Laboratory of Superhard Materials
- College of Physics
- Jilin University
- Changchun 130012
- China
| | - Gaowu Qin
- School of Material Science and Engineering
- Northeastern University
- Shenyang 110819
- China
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education)
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16
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Yang W, Shi Q, Miao T, Li Q, Cai P, Liu H, Lin H, Bai Y, Zhu Y, Yu Y, Deng L, Wang W, Yin L, Sun D, Zhang XG, Shen J. Achieving large and nonvolatile tunable magnetoresistance in organic spin valves using electronic phase separated manganites. Nat Commun 2019; 10:3877. [PMID: 31462635 PMCID: PMC6713754 DOI: 10.1038/s41467-019-11827-0] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/25/2018] [Accepted: 07/31/2019] [Indexed: 11/24/2022] Open
Abstract
Tailoring molecular spinterface between novel magnetic materials and organic semiconductors offers promise to achieve high spin injection efficiency. Yet it has been challenging to achieve simultaneously a high and nonvolatile control of magnetoresistance effect in organic spintronic devices. To date, the largest magnetoresistance (~300% at T = 10 K) has been reached in tris-(8-hydroxyquinoline) aluminum (Alq3)-based organic spin valves (OSVs) using La0.67Sr0.33MnO3 as a magnetic electrode. Here we demonstrate that one type of perovskite manganites, i.e., a (La2/3Pr1/3)5/8Ca3/8MnO3 thin film with pronounced electronic phase separation (EPS), can be used in Alq3-based OSVs to achieve a large magnetoresistance (MR) up to 440% at T = 10 K and a typical electrical Hanle effect as the Hallmark of the spin injection. The contactless magnetic field-controlled EPS enables us to achieve a nonvolatile tunable MR response persisting up to 120 K. Our study suggests a new route to design high performance multifunctional OSV devices using electronic phase separated manganites. Organic materials hold great potential of for spintronic applications. Here the authors show electronic phase dependent magnetoresistance (MR) effect in LPCMO/Alq3/Co junctions with large MR up to 440% at 10 K as well as electrical Hanle effect as the Hallmark of the spin injection.
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Affiliation(s)
- Wenting Yang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Qian Shi
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Tian Miao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Qiang Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Peng Cai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Hao Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Hanxuan Lin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Yu Bai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Yinyan Zhu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Yang Yu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Lina Deng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Wenbin Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.,Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, 200433, Shanghai, China
| | - Lifeng Yin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.,Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, 200433, Shanghai, China.,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Dali Sun
- Department of Physics, North Carolina State University, Raleigh, NC, 27695, USA.
| | - X-G Zhang
- Department of Physics and the Quantum Theory Project, University of Florida, Gainesville, FL, 32611, USA
| | - Jian Shen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China. .,Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, 200433, Shanghai, China. .,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
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17
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Li D, Wang X, Lin Z, Zheng Y, Jiang Q, Zheng N, Zhang W, Jin KJ, Yu G. Tuning Charge Carrier and Spin Transport Properties via Structural Modification of Polymer Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:30089-30097. [PMID: 31342737 DOI: 10.1021/acsami.9b07863] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Targeted design of organic semiconductors in organic spintronics is relatively limited. Therefore, four conjugated polymers with analogous structures based on isoindigo (IID) units were designed and synthesized to investigate the structure-property relationships in spin and charge carrier transport. Structural design strategies include introduction of pyridinic nitrogen atoms into IID units to change electronic structures and alteration of different branching points of alkyl chains to adjust the aggregation structure. By fabricating polymer field-effect transistors (PFETs) and organic spin valves (OSVs), all of the polymers exhibited good ambipolar field-effect properties (all of the mobilities exceeding 0.3 cm2 V-1 s-1) and relatively high magnetoresistance (MR) values (maximum up to 25%). Most importantly, it is found that the introduction of pyridinic nitrogen into the IID units can improve MR values of OSVs and electron mobilities of PFETs, whereas the extension of alkyl chain branching points can reduce MR values of the conjugated polymers. This work is the first attempt to thoroughly study the structure-property relationship in the OSVs, combined with molecular design of the conjugated polymers, which provides a guideline for molecular engineering, especially for organic spintronics.
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Affiliation(s)
- Dong Li
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry , Chinese Academy of Sciences , Beijing 100190 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Xiang Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
- Songshan Lake Materials Laboratory , Dongguan , Guangdong 523808 , P. R. China
| | - Zuzhang Lin
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry , Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Yuanhui Zheng
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry , Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Qianqing Jiang
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry , Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Naihang Zheng
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry , Chinese Academy of Sciences , Beijing 100190 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Weifeng Zhang
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry , Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
- Songshan Lake Materials Laboratory , Dongguan , Guangdong 523808 , P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry , Chinese Academy of Sciences , Beijing 100190 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
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18
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Guo L, Qin Y, Gu X, Zhu X, Zhou Q, Sun X. Spin Transport in Organic Molecules. Front Chem 2019; 7:428. [PMID: 31275920 PMCID: PMC6591472 DOI: 10.3389/fchem.2019.00428] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2019] [Accepted: 05/27/2019] [Indexed: 11/13/2022] Open
Abstract
Because of the considerable advantages of functional molecules as well as supramolecules, such as the low cost, light weight, flexibility, and large area preparation via the solution method, molecular electronics has grown into an active and rapidly developing research field over the past few decades. Beyond those well-known advantages, a very long spin relaxation time of π-conjugated molecules, due to the weak spin-orbit coupling, facilitates a pioneering but fast-growing research field, known as molecular spintronics. Recently, a series of sustained progresses have been achieved with various π-conjugated molecular matrixes where spin transport is undoubtedly an important point for the spin physical process and multifunctional applications. Currently, most studies on spin transport are carried out with a molecule-based spin valve, which shows a typical geometry with a thin-film molecular layer sandwiched between two ferromagnetic electrodes. In such a device, the spin transport process has been demonstrated to have a close correlation with spin relaxation time and charge carrier mobility of π-conjugated molecules. In this review, the recent advances of spin transport in these two aspects have been systematically summarized. Particularly, spin transport in π-conjugated molecular materials, considered as promising for spintronics development, have also been highlighted, including molecular single crystal, cocrystal, solid solution as well as other highly ordered supramolecular structures.
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Affiliation(s)
- Lidan Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, CAS (Chinese Academy of Sciences) Center for Excellence in Nanoscience, Beijing, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China.,Department of Materials Science and Engineering, College of New Energy and Materials, China University of Petroleum Beijing, Beijing, China
| | - Yang Qin
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, CAS (Chinese Academy of Sciences) Center for Excellence in Nanoscience, Beijing, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Xianrong Gu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, CAS (Chinese Academy of Sciences) Center for Excellence in Nanoscience, Beijing, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Xiangwei Zhu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, CAS (Chinese Academy of Sciences) Center for Excellence in Nanoscience, Beijing, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Qiong Zhou
- Department of Materials Science and Engineering, College of New Energy and Materials, China University of Petroleum Beijing, Beijing, China
| | - Xiangnan Sun
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, CAS (Chinese Academy of Sciences) Center for Excellence in Nanoscience, Beijing, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
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19
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Kaiju H, Misawa T, Nagahama T, Komine T, Kitakami O, Fujioka M, Nishii J, Xiao G. Robustness of Voltage-induced Magnetocapacitance. Sci Rep 2018; 8:14709. [PMID: 30279552 PMCID: PMC6168469 DOI: 10.1038/s41598-018-33065-y] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/27/2018] [Accepted: 09/18/2018] [Indexed: 11/09/2022] Open
Abstract
One of the most important achievements in the field of spintronics is the development of magnetic tunnel junctions (MTJs). MTJs exhibit a large tunneling magnetoresistance (TMR). However, TMR is strongly dependent on biasing voltage, generally, decreasing with applying bias. The rapid decay of TMR was a major deficiency of MTJs. Here we report a new phenomenon at room temperature, in which the tunneling magnetocapacitance (TMC) increases with biasing voltage in an MTJ system based on Co40Fe40B20/MgO/Co40Fe40B20. We have observed a maximum TMC value of 102% under appropriate biasing, which is the largest voltage-induced TMC effect ever reported for MTJs. We have found excellent agreement between theory and experiment for the bipolar biasing regions using Debye-Fröhlich model combined with quartic barrier approximation and spin-dependent drift-diffusion model. Based on our calculation, we predict that the voltage-induced TMC ratio could reach 1100% in MTJs with a corresponding TMR value of 604%. Our work has provided a new understanding on the voltage-induced AC spin-dependent transport in MTJs. The results reported here may open a novel pathway for spintronics applications, e.g., non-volatile memories and spin logic circuits.
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Affiliation(s)
- Hideo Kaiju
- Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido, 001-0020, Japan.
| | - Takahiro Misawa
- Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido, 001-0020, Japan
| | - Taro Nagahama
- Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido, 060-8628, Japan
| | - Takashi Komine
- Graduate School of Science and Engineering, Ibaraki University, Hitachi, Ibaraki, 316-8511, Japan
| | - Osamu Kitakami
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, Miyagi, 980-8577, Japan
| | - Masaya Fujioka
- Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido, 001-0020, Japan
| | - Junji Nishii
- Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido, 001-0020, Japan
| | - Gang Xiao
- Department of Physics, Brown University, Providence, RI, 02912, USA
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20
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Boukari S, Jabbar H, Schleicher F, Gruber M, Avedissian G, Arabski J, Da Costa V, Schmerber G, Rengasamy P, Vileno B, Weber W, Bowen M, Beaurepaire E. Disentangling Magnetic Hardening and Molecular Spin Chain Contributions to Exchange Bias in Ferromagnet/Molecule Bilayers. NANO LETTERS 2018; 18:4659-4663. [PMID: 29991266 DOI: 10.1021/acs.nanolett.8b00570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We performed ferromagnetic resonance and magnetometry experiments to clarify the relationship between two reported magnetic exchange effects arising from interfacial spin-polarized charge transfer in ferromagnetic metal (FM)/molecule bilayers: the magnetic hardening effect and spinterface-stabilized molecular spin chains. To disentangle these effects, we tuned the metal phthalocyanine molecule central site's magnetic moment to enhance or suppress the formation of spin chains in the molecular film. We find that both effects are distinct, and additive. In the process, we extend the list of FM/molecule candidate pairs that are known to generate magnetic exchange effects, experimentally confirm the predicted increase in anisotropy upon molecular adsorption, and show that spin chains within the molecular film can enhance magnetic exchange. Our results confirm, as an echo to progress regarding inorganic spintronic tunnelling, that spintronic tunnelling across structurally ordered organic barriers has been reached through previous magnetotransport experiments.
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Affiliation(s)
- Samy Boukari
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Hashim Jabbar
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Filip Schleicher
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Manuel Gruber
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Garen Avedissian
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Jacek Arabski
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Victor Da Costa
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Guy Schmerber
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Prashanth Rengasamy
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Bertrand Vileno
- Institut de Chimie de Strasbourg, Université de Strasbourg, CNRS UMR7177 , 4 rue Blaise Pascal , F-67081 Strasbourg Cedex , France
- French EPR Federation of Research (REseau NAtional de Rpe interDisciplinaire (RENARD), Fédération IR-RPE CNRS 3443) , 59655 Villeneuve d'Ascq Cedex , France
| | - Wolfgang Weber
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Martin Bowen
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
| | - Eric Beaurepaire
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504 , 23 rue du Loess, BP 43 , F-67034 Strasbourg Cedex 2 , France
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21
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Tang YH, Lin CJ, Chiang KR. Hard-hard coupling assisted anomalous magnetoresistance effect in amine-ended single-molecule magnetic junction. J Chem Phys 2018; 146:224701. [PMID: 29166063 DOI: 10.1063/1.4984821] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
We proposed a single-molecule magnetic junction (SMMJ), composed of a dissociated amine-ended benzene sandwiched between two Co tip-like nanowires. To better simulate the break junction technique for real SMMJs, the first-principles calculation associated with the hard-hard coupling between a amine-linker and Co tip-atom is carried out for SMMJs with mechanical strain and under an external bias. We predict an anomalous magnetoresistance (MR) effect, including strain-induced sign reversal and bias-induced enhancement of the MR value, which is in sharp contrast to the normal MR effect in conventional magnetic tunnel junctions. The underlying mechanism is the interplay between four spin-polarized currents in parallel and anti-parallel magnetic configurations, originated from the pronounced spin-up transmission feature in the parallel case and spiky transmission peaks in other three spin-polarized channels. These intriguing findings may open a new arena in which magnetotransport and hard-hard coupling are closely coupled in SMMJs and can be dually controlled either via mechanical strain or by an external bias.
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Affiliation(s)
- Y-H Tang
- Department of Physics, National Central University, Jung-Li 32001, Taiwan
| | - C-J Lin
- Department of Physics, National Central University, Jung-Li 32001, Taiwan
| | - K-R Chiang
- Department of Physics, National Central University, Jung-Li 32001, Taiwan
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22
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Yao X, Duan Q, Tong J, Chang Y, Zhou L, Qin G, Zhang X. Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers. MATERIALS (BASEL, SWITZERLAND) 2018; 11:E721. [PMID: 29751514 PMCID: PMC5978098 DOI: 10.3390/ma11050721] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2018] [Revised: 04/27/2018] [Accepted: 04/28/2018] [Indexed: 02/04/2023]
Abstract
Organic spin devices utilizing the properties of both spin and charge inherent in electrons have attracted extensive research interest in the field of future electronic device development. In the last decade, magnetoresistance effects, including giant magetoresistance and tunneling magnetoresistance, have been observed in organic spintronics. Significant progress has been made in understanding spin-dependent transport phenomena, such as spin injection or tunneling, manipulation, and detection in organic spintronics. However, to date, materials that are effective for preparing organic spin devices for commercial applications are still lacking. In this report, we introduce basic knowledge of the fabrication and evaluation of organic spin devices, and review some remarkable applications for organic spin valves using molecular spacers. The current bottlenecks that hinder further enhancement for the performance of organic spin devices is also discussed. This report presents some research ideas for designing organic spin devices operated at room temperature.
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Affiliation(s)
- Xiannian Yao
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Qingqing Duan
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Junwei Tong
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Yufang Chang
- Computer Teaching and Researching Section, Shenyang Conservatory of Music, Shenyang 110818, China.
| | - Lianqun Zhou
- Suzhou Institute of Biomedical, Engineering and Technology, Chinese Academy of Sciences, Suzhou 215163, China.
| | - Gaowu Qin
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
- Northeastern Institute of Metal Materials Co., Ltd., Shenyang 110108, China.
| | - Xianmin Zhang
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
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23
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Gracia J, Sharpe R, Munarriz J. Principles determining the activity of magnetic oxides for electron transfer reactions. J Catal 2018. [DOI: 10.1016/j.jcat.2018.03.012] [Citation(s) in RCA: 60] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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24
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Bergenti I, Borgatti F, Calbucci M, Riminucci A, Cecchini R, Graziosi P, MacLaren DA, Giglia A, Rueff JP, Céolin D, Pasquali L, Dediu V. Oxygen Impurities Link Bistability and Magnetoresistance in Organic Spin Valves. ACS APPLIED MATERIALS & INTERFACES 2018; 10:8132-8140. [PMID: 29411962 DOI: 10.1021/acsami.7b16068] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Vertical crossbar devices based on manganite and cobalt injecting electrodes and a metal-quinoline molecular transport layer are known to manifest both magnetoresistance (MR) and electrical bistability. The two effects are strongly interwoven, inspiring new device applications such as electrical control of the MR and magnetic modulation of bistability. To explain the device functionality, we identify the mechanism responsible for electrical switching by associating the electrical conductivity and the impedance behavior with the chemical states of buried layers obtained by in operando photoelectron spectroscopy. These measurements revealed that a significant fraction of oxygen ions migrate under voltage application, resulting in a modification of the electronic properties of the organic material and of the oxidation state of the interfacial layer with the ferromagnetic contacts. Variable oxygen doping of the organic molecules represents the key element for correlating bistability and MR, and our measurements provide the first experimental evidence in favor of the impurity-driven model describing the spin transport in organic semiconductors in similar devices.
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Affiliation(s)
| | | | - Marco Calbucci
- Institute of Molecular Science (ICMol) , Catedrático José Beltrán Martínez 2 , 46980 Paterna , Spain
| | | | | | | | - Donald A MacLaren
- SUPA, School of Physics and Astronomy , University of Glasgow , Glasgow G12 8QQ , Scotland
| | - Angelo Giglia
- IOM-CNR , s.s. 14, Km. 163.5 in AREA Science Park , Basovizza , 34149 Trieste , Italy
| | - Jean Pascal Rueff
- Synchrotron SOLEIL , Saint-Aubin, BP 48, F-91192 Gif-sur-Yvette Cedex , France
| | - Denis Céolin
- Synchrotron SOLEIL , Saint-Aubin, BP 48, F-91192 Gif-sur-Yvette Cedex , France
| | - Luca Pasquali
- IOM-CNR , s.s. 14, Km. 163.5 in AREA Science Park , Basovizza , 34149 Trieste , Italy
- Dipartimento di Ingegneria E. Ferrari , Via Vivarelli 10 , 41125 Modena , Italy
- Department of Physics , University of Johannesburg , P.O. Box 524, Auckland Park 2006 , South Africa
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25
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Varade V, Markus T, Vankayala K, Friedman N, Sheves M, Waldeck DH, Naaman R. Bacteriorhodopsin based non-magnetic spin filters for biomolecular spintronics. Phys Chem Chem Phys 2018; 20:1091-1097. [DOI: 10.1039/c7cp06771b] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We discuss spin injection and spin valves, which are based on organic and biomolecules, that offer the possibility to overcome some of the limitations of solid-state devices, which are based on ferromagnetic metal electrodes.
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Affiliation(s)
- Vaibhav Varade
- Department of Chemical and Biological Physics
- Weizmann Institute of Science
- Rehovot
- Israel
| | - Tal Markus
- Department of Chemical and Biological Physics
- Weizmann Institute of Science
- Rehovot
- Israel
| | - Kiran Vankayala
- Department of Chemical and Biological Physics
- Weizmann Institute of Science
- Rehovot
- Israel
| | - Noga Friedman
- Department of Organic Chemistry
- Weizmann Institute of Science
- Rehovot
- Israel
| | - Mordechai Sheves
- Department of Organic Chemistry
- Weizmann Institute of Science
- Rehovot
- Israel
| | | | - Ron Naaman
- Department of Chemical and Biological Physics
- Weizmann Institute of Science
- Rehovot
- Israel
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26
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Hu G, Xie S, Wang C, Timm C. Spin-dependent transport and functional design in organic ferromagnetic devices. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2017; 8:1919-1931. [PMID: 29046839 PMCID: PMC5629376 DOI: 10.3762/bjnano.8.192] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/30/2017] [Accepted: 08/18/2017] [Indexed: 06/07/2023]
Abstract
Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su-Schrieffer-Heeger model with the Green's function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron-lattice interaction and spin-spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.
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Affiliation(s)
- Guichao Hu
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
- Institute of Theoretical Physics, Technische Universität Dresden, 01062 Dresden, Germany
| | - Shijie Xie
- School of Physics, Shandong University, Jinan 250100, China
| | - Chuankui Wang
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
| | - Carsten Timm
- Institute of Theoretical Physics, Technische Universität Dresden, 01062 Dresden, Germany
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27
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Dankert A, Pashaei P, Kamalakar MV, Gaur APS, Sahoo S, Rungger I, Narayan A, Dolui K, Hoque MA, Patel RS, de Jong MP, Katiyar RS, Sanvito S, Dash SP. Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide. ACS NANO 2017; 11:6389-6395. [PMID: 28557439 DOI: 10.1021/acsnano.7b02819] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.
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Affiliation(s)
- André Dankert
- Department of Microtechnology and Nanoscience, Chalmers University of Technology , SE-41296, Göteborg, Sweden
| | - Parham Pashaei
- Department of Microtechnology and Nanoscience, Chalmers University of Technology , SE-41296, Göteborg, Sweden
| | - M Venkata Kamalakar
- Department of Microtechnology and Nanoscience, Chalmers University of Technology , SE-41296, Göteborg, Sweden
- Department of Physics and Astronomy, Uppsala University , Box 516, 75120, Uppsala, Sweden
| | - Anand P S Gaur
- Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico , San Juan, PR 00931, United States
- Mechanical Engineering Department, Iowa State University , Ames, Iowa 50011, United States
| | - Satyaprakash Sahoo
- Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico , San Juan, PR 00931, United States
- Institute of Physics , Bhubaneswar, Odisha 751005, India
| | - Ivan Rungger
- National Physical Laboratory , Teddington, TW11 0LW, United Kingdom
| | - Awadhesh Narayan
- School of Physics, AMBER and CRANN Institute, Trinity College , Dublin 2, Ireland
- Materials Theory, ETH Zurich , Wolfgang-Pauli-Strasse 27, CH 8093, Zurich, Switzerland
| | - Kapildeb Dolui
- School of Physics, AMBER and CRANN Institute, Trinity College , Dublin 2, Ireland
- Department of Physics and Astronomy, University of Delaware , Newark, Delaware 19716-2570, United States
| | - Md Anamul Hoque
- Department of Microtechnology and Nanoscience, Chalmers University of Technology , SE-41296, Göteborg, Sweden
| | - Ram Shanker Patel
- Department of Physics, Birla Institute of Technology and Science , Pilani - K K Birla Goa Campus, Zuarinagar, 403726, Goa, India
| | - Michel P de Jong
- MESA+ Institute for Nanotechnology University of Twente , 7500 AE Enschede, The Netherlands
| | - Ram S Katiyar
- Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico , San Juan, PR 00931, United States
| | - Stefano Sanvito
- School of Physics, AMBER and CRANN Institute, Trinity College , Dublin 2, Ireland
| | - Saroj P Dash
- Department of Microtechnology and Nanoscience, Chalmers University of Technology , SE-41296, Göteborg, Sweden
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28
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Ding S, Tian Y, Li Y, Mi W, Dong H, Zhang X, Hu W, Zhu D. Inverse Magnetoresistance in Polymer Spin Valves. ACS APPLIED MATERIALS & INTERFACES 2017; 9:15644-15651. [PMID: 28452463 DOI: 10.1021/acsami.7b02804] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In this work, both negative and positive magnetoresistance (MR) in solution-processed regioregular poly(3-hexylthiophene) (RR-P3HT) is observed in organic spin valves (OSVs) with vertical La2/3Sr1/3MnO3 (LSMO)/P3HT/AlOx/Co configuration. The ferromagnetic (FM) LSMO electrode with near-atomic flatness is fabricated by a DC facing-target magnetron sputtering method. This research is focused on the origin of the MR inversion. Two types of devices are investigated in details: One with Co penetration shows a negative MR of 0.2%, while the other well-defined device with a nonlinear behavior has a positive MR of 15.6%. The MR measurements in LSMO/AlOx/Co and LSMO/Co junctions are carried to exclude the interference of insulating layer and two FM electrodes themselves. By examining the Co thicknesses and their corresponding magnetic hysteresis loops, a spin-dependent hybrid-interface-state model by Co penetration is induced to explain the MR sign inversion. These results proven by density functional theory (DFT) calculations may shed light on the controllable interfacial properties in designing novel OSV devices.
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Affiliation(s)
- Shuaishuai Ding
- Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China
| | - Yuan Tian
- Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China
| | - Yang Li
- Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China
| | - Wenbo Mi
- School of Science, Tianjin University , Tianjin 300072, China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China
| | - Xiaotao Zhang
- School of Science, Tianjin University , Tianjin 300072, China
| | - Wenping Hu
- Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China
- School of Science, Tianjin University , Tianjin 300072, China
| | - Daoben Zhu
- Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China
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29
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Cinchetti M, Dediu VA, Hueso LE. Activating the molecular spinterface. NATURE MATERIALS 2017; 16:507-515. [PMID: 28439116 DOI: 10.1038/nmat4902] [Citation(s) in RCA: 140] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2017] [Accepted: 03/23/2017] [Indexed: 05/19/2023]
Abstract
The miniaturization trend in the semiconductor industry has led to the understanding that interfacial properties are crucial for device behaviour. Spintronics has not been alien to this trend, and phenomena such as preferential spin tunnelling, the spin-to-charge conversion due to the Rashba-Edelstein effect and the spin-momentum locking at the surface of topological insulators have arisen mainly from emergent interfacial properties, rather than the bulk of the constituent materials. In this Perspective we explore inorganic/molecular interfaces by looking closely at both sides of the interface. We describe recent developments and discuss the interface as an ideal platform for creating new spin effects. Finally, we outline possible technologies that can be generated thanks to the unique active tunability of molecular spinterfaces.
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Affiliation(s)
- Mirko Cinchetti
- Experimentelle Physik VI, Technische Universität Dortmund, 44221 Dortmund, Germany
| | - V Alek Dediu
- Istituto per lo Studio dei Materiali Nanostrutturati CNRISMN, 40129 Bologna, Italy
| | - Luis E Hueso
- CIC nanoGUNE, 20018 San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Spain
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30
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Michaeli K, Varade V, Naaman R, Waldeck DH. A new approach towards spintronics-spintronics with no magnets. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:103002. [PMID: 28145273 DOI: 10.1088/1361-648x/aa54a4] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
We review a recently discovered phenomenon, the chiral induced spin selectivity (CISS) effect, that can enable a new technology for the injection of spin polarized current without the need for a permanent magnetic layer. The effect occurs in chiral molecules and systems without parity symmetry, i.e. systems that do not have inversion symmetry. The theoretical foundations for the effect are presented first and then followed by several examples of spin-valves that are based on chiral systems. The CISS-based spin valves introduce the possibility to inject spin current without the use of a permanent magnet and to achieve relatively large magnetoresistance at room temperature.
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Affiliation(s)
- Karen Michaeli
- Department of Condensed Matter, Weizmann Institute of Science, Rehovot 76100, Israel
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31
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Jang HJ, Richter CA. Organic Spin-Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1602739. [PMID: 27859663 DOI: 10.1002/adma.201602739] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2016] [Revised: 08/18/2016] [Indexed: 06/06/2023]
Abstract
Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies.
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Affiliation(s)
- Hyuk-Jae Jang
- Engineering Physics Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD, 20899, USA
- Theiss Research, La Jolla, CA, 92037, USA
| | - Curt A Richter
- Engineering Physics Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD, 20899, USA
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32
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Mondal PC, Fontanesi C, Waldeck DH, Naaman R. Spin-Dependent Transport through Chiral Molecules Studied by Spin-Dependent Electrochemistry. Acc Chem Res 2016; 49:2560-2568. [PMID: 27797176 PMCID: PMC5112609 DOI: 10.1021/acs.accounts.6b00446] [Citation(s) in RCA: 81] [Impact Index Per Article: 10.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
Abstract
![]()
Molecular spintronics (spin + electronics), which aims to exploit
both the spin degree of freedom and the electron charge in molecular
devices, has recently received massive attention. Our recent experiments
on molecular spintronics employ chiral molecules which have the unexpected
property of acting as spin filters, by way of an effect we call “chiral-induced spin selectivity” (CISS). In this
Account, we discuss new types of spin-dependent electrochemistry measurements
and their use to probe the spin-dependent charge transport properties
of nonmagnetic chiral conductive polymers and biomolecules, such as
oligopeptides, L/D cysteine, cytochrome c, bacteriorhodopsin
(bR), and oligopeptide-CdSe nanoparticles (NPs) hybrid structures.
Spin-dependent electrochemical measurements were carried out by employing
ferromagnetic electrodes modified with chiral molecules used as the
working electrode. Redox probes were used either in solution or when
directly attached to the ferromagnetic electrodes. During the electrochemical
measurements, the ferromagnetic electrode was magnetized either with
its magnetic moment pointing “UP” or “DOWN”
using a permanent magnet (H = 0.5 T), placed underneath
the chemically modified ferromagnetic electrodes. The spin polarization
of the current was found to be in the range of 5–30%, even
in the case of small chiral molecules. Chiral films of the l- and d-cysteine tethered with a redox-active dye, toludin
blue O, show spin polarizarion that depends on the chirality. Because
the nickel electrodes are susceptible to corrosion, we explored the
effect of coating them with a thin gold overlayer. The effect of the
gold layer on the spin polarization of the electrons ejected from
the electrode was investigated. In addition, the role of the structure
of the protein on the spin selective transport was also studied as
a function of bias voltage and the effect of protein denaturation
was revealed. In addition to “dark” measurements, we
also describe photoelectrochemical measurements in which light is
used to affect the spin selective electron transport through the chiral
molecules. We describe how the excitation of a chromophore (such as
CdSe nanoparticles), which is attached to a chiral working electrode,
can flip the preferred spin orientation of the photocurrent, when
measured under the identical conditions. Thus, chirality-induced spin
polarization, when combined with light and magnetic field effects,
opens new avenues for the study of the spin transport properties of
chiral molecules and biomolecules and for creating new types of spintronic
devices in which light and molecular chirality provide new functions
and properties.
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Affiliation(s)
| | - Claudio Fontanesi
- Department
of Chemical Physics, Weizmann Institute of Science, Rehovot 76100, Israel
- Department
of Engineering, University of Modena and Reggio Emilia, Via Vivarelli
10, 41125 Modena, Italy
| | - David H. Waldeck
- Department
of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Ron Naaman
- Department
of Chemical Physics, Weizmann Institute of Science, Rehovot 76100, Israel
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33
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Li ZD, Li QY, Xu TF, He PB. Breathers and rogue waves excited by all-magnonic spin-transfer torque. Phys Rev E 2016; 94:042220. [PMID: 27841617 DOI: 10.1103/physreve.94.042220] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2016] [Indexed: 11/07/2022]
Abstract
In terms of Darboux transformation we investigate the dynamic process of spin wave passing through a magnetic soliton. It causes nonlinear excitations, such as Akhmediev breathers solution and Kuznetsov-Ma soliton. The former case demonstrates a spatial periodic process of a magnetic soliton forming the petal with four pieces. The spatial separation of adjacent magnetic petals increases rapidly, while one valley splits into two and the amplitude of valley increases gradually with the increasing amplitude of spin wave. The other case shows a localized process of the spin-wave background. In the limit case, we get rogue waves and clarify its formation mechanism.
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Affiliation(s)
- Zai-Dong Li
- Department of Applied Physics, Hebei University of Technology, Tianjin 300401, China.,International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Qiu-Yan Li
- Department of Applied Physics, Hebei University of Technology, Tianjin 300401, China
| | - Tian-Fu Xu
- Department of Physics, Yanshan University, Qinhuangdao 066004, China
| | - Peng-Bin He
- School of Physics and Electronics, Hunan University, Changsha 410082, China
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34
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Wang K, Strambini E, Sanderink JGM, Bolhuis T, van der Wiel WG, de Jong MP. Effect of Orbital Hybridization on Spin-Polarized Tunneling across Co/C 60 Interfaces. ACS APPLIED MATERIALS & INTERFACES 2016; 8:28349-28356. [PMID: 27624282 DOI: 10.1021/acsami.6b08313] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an AlOx tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance (TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C60 interface was found to be 43%.
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Affiliation(s)
- Kai Wang
- NanoElectronics (NE) Group, MESA+ Institute for Nanotechnology, University of Twente , P. O. Box 217, Enschede 7500AE, The Netherlands
| | - Elia Strambini
- NanoElectronics (NE) Group, MESA+ Institute for Nanotechnology, University of Twente , P. O. Box 217, Enschede 7500AE, The Netherlands
| | - Johnny G M Sanderink
- NanoElectronics (NE) Group, MESA+ Institute for Nanotechnology, University of Twente , P. O. Box 217, Enschede 7500AE, The Netherlands
| | - Thijs Bolhuis
- NanoElectronics (NE) Group, MESA+ Institute for Nanotechnology, University of Twente , P. O. Box 217, Enschede 7500AE, The Netherlands
| | - Wilfred G van der Wiel
- NanoElectronics (NE) Group, MESA+ Institute for Nanotechnology, University of Twente , P. O. Box 217, Enschede 7500AE, The Netherlands
| | - Michel P de Jong
- NanoElectronics (NE) Group, MESA+ Institute for Nanotechnology, University of Twente , P. O. Box 217, Enschede 7500AE, The Netherlands
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35
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Lv ZP, Luan ZZ, Cai PY, Wang T, Li CH, Wu D, Zuo JL, Sun S. Enhancing magnetoresistance in tetrathiafulvalene carboxylate modified iron oxide nanoparticle assemblies. NANOSCALE 2016; 8:12128-12133. [PMID: 27271347 DOI: 10.1039/c6nr03311c] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report a facile approach to stabilize Fe3O4 nanoparticles (NPs) by using tetrathiafulvalene carboxylate (TTF-COO(-)) and to control electron transport with an enhanced magnetoresistance (MR) effect in TTF-COO-Fe3O4 NP assemblies. This TTF-COO-coating is advantageous over other conventional organic coatings, making it possible to develop stable Fe3O4 NP arrays for sensitive spintronics applications.
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Affiliation(s)
- Zhong-Peng Lv
- State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
| | - Zhong-Zhi Luan
- National Laboratory of Solid State Microstructures, Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Pei-Yu Cai
- State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
| | - Tao Wang
- State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
| | - Cheng-Hui Li
- State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
| | - Di Wu
- National Laboratory of Solid State Microstructures, Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Jing-Lin Zuo
- State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
| | - Shouheng Sun
- Department of Chemistry, Brown University, Providence, Rhode Island 02912, USA.
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Pan H, Shen Y, Duan J, Lu K, Hu B. Spin-dependent deprotonation induced giant magnetocurrent in electrochemical cells. Phys Chem Chem Phys 2016; 18:9897-901. [PMID: 27009519 DOI: 10.1039/c6cp00987e] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A giant magnetocurrent (>100%) is observed in the electrochemical system based on tertiary amines at room temperature. This giant magnetocurrent is ascribed to spin-dependent deprotonation during the oxidation of tertiary amines. This presents a new approach of using spin-dependent deprotonation to generate giant magnetocurrent in electrochemical reactions.
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Affiliation(s)
- Haiping Pan
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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37
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Wang X, Wang H, Pan D, Keiper T, Li L, Yu X, Lu J, Lochner E, von Molnár S, Xiong P, Zhao J. Robust Manipulation of Magnetism in Dilute Magnetic Semiconductor (Ga,Mn)As by Organic Molecules. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:8043-8050. [PMID: 26540329 DOI: 10.1002/adma.201503547] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2015] [Revised: 08/21/2015] [Indexed: 06/05/2023]
Abstract
Surface adsorption of organic molecules provides a new method for the robust manipulation of ferromagnetism in (Ga,Mn)As. Electron acceptor and donor molecules yield significant enhancement and suppression, respectively, of ferromagnetism with modulation of the Curie temperature spanning 36 K. Dip-pen nanolithography is employed to directly pattern monolayers on (Ga,Mn)As, which is presented as a novel pathway toward producing magnetic nanostructures.
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Affiliation(s)
- Xiaolei Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China
| | - Hailong Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China
| | - Timothy Keiper
- Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Lixia Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China
| | - Xuezhe Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China
| | - Jun Lu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China
| | - Eric Lochner
- Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Stephan von Molnár
- Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Peng Xiong
- Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China
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38
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Majumdar S, Grochowska K, Sawczak M, Śliwiński G, Huhtinen H, Dahl J, Tuominen M, Laukkanen P, Majumdar HS. Interfacial Properties of Organic Semiconductor-Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition. ACS APPLIED MATERIALS & INTERFACES 2015; 7:22228-22237. [PMID: 26402298 DOI: 10.1021/acsami.5b04840] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices.
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Affiliation(s)
- Sayani Majumdar
- Department of Applied Physics, Aalto University School of Science , FI-00076 Aalto, Finland
| | - Katarzyna Grochowska
- Photophysics Department, The Szewalski Institute, Polish Academy of Sciences , 80-231 Gdansk, Poland
| | - Miroslaw Sawczak
- Photophysics Department, The Szewalski Institute, Polish Academy of Sciences , 80-231 Gdansk, Poland
| | - Gerard Śliwiński
- Photophysics Department, The Szewalski Institute, Polish Academy of Sciences , 80-231 Gdansk, Poland
| | - Hannu Huhtinen
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku , FI-20014 Turku, Finland
| | - Johnny Dahl
- Materials Research Laboratory, Department of Physics and Astronomy, University of Turku , FI-20014 Turku, Finland
| | - Marjukka Tuominen
- Materials Research Laboratory, Department of Physics and Astronomy, University of Turku , FI-20014 Turku, Finland
| | - Pekka Laukkanen
- Materials Research Laboratory, Department of Physics and Astronomy, University of Turku , FI-20014 Turku, Finland
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39
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Jiang SW, Liu S, Wang P, Luan ZZ, Tao XD, Ding HF, Wu D. Exchange-Dominated Pure Spin Current Transport in Alq3 Molecules. PHYSICAL REVIEW LETTERS 2015; 115:086601. [PMID: 26340196 DOI: 10.1103/physrevlett.115.086601] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2015] [Indexed: 06/05/2023]
Abstract
We address the controversy over the spin transport mechanism in Alq3 utilizing spin pumping in the Y3Fe5O12/Alq3/Pd system. An unusual angular dependence of the inverse spin Hall effect is found. It, however, disappears when the microwave magnetic field is fully in the sample plane, excluding the presence of the Hanle effect. Together with the quantitative temperature-dependent measurements, these results provide compelling evidence that the pure spin current transport in Alq3 is dominated by the exchange-mediated mechanism.
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Affiliation(s)
- S W Jiang
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China
| | - S Liu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China
| | - P Wang
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China
| | - Z Z Luan
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China
| | - X D Tao
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China
| | - H F Ding
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China
| | - D Wu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China
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40
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Zhang Q, Mi W, Wang X, Wang X. Spin Polarization Inversion at Benzene-Absorbed Fe4N Surface. Sci Rep 2015; 5:10602. [PMID: 26012892 PMCID: PMC4445049 DOI: 10.1038/srep10602] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/25/2015] [Accepted: 04/21/2015] [Indexed: 12/02/2022] Open
Abstract
We report a first-principle study on electronic structure and simulation of the spin-polarized scanning tunneling microscopy graphic of a benzene/Fe(4)N interface. Fe(4)N is a compound ferromagnet suitable for many spintronic applications. We found that, depending on the particular termination schemes and interface configurations, the spin polarization on the benzene surface shows a rich variety of properties ranging from cosine-type oscillation to polarization inversion. Spin-polarization inversion above benzene is resulting from the hybridizations between C p(z) and the out-of-plane d orbitals of Fe atom.
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Affiliation(s)
- Qian Zhang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University, Tianjin 300072, China
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University, Tianjin 300072, China
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Xuhui Wang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
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41
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Caneschi A, Gatteschi D, Totti F. Molecular magnets and surfaces: A promising marriage. A DFT insight. Coord Chem Rev 2015. [DOI: 10.1016/j.ccr.2014.11.016] [Citation(s) in RCA: 46] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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42
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Excellent spin transport in spin valves based on the conjugated polymer with high carrier mobility. Sci Rep 2015; 5:9355. [PMID: 25797862 PMCID: PMC4369752 DOI: 10.1038/srep09355] [Citation(s) in RCA: 42] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2014] [Accepted: 03/02/2015] [Indexed: 11/09/2022] Open
Abstract
Organic semiconductors (OSCs) are characteristic of long spin-relaxation lifetime due to weak spin-orbit interaction and hyperfine interaction. However, short spin diffusion length and weak magnetoresistance (MR) effect at room temperature (RT) was commonly found on spin valves (SVs) using an organic spacer, which should be correlated with low carrier mobility of the OSCs. Here, N-type semiconducting polymer P(NDI2OD-T2) with high carrier mobility is employed as the spacer in the SV devices. Exceedingly high MR ratio of 90.0% at 4.2 K and of 6.8% at RT are achieved, respectively, via improving the interface structure between the polymer interlayer and top cobalt electrode as well as optimal annealing of manganite bottom electrode. Furthermore, we observe spin dependent transport through the polymeric interlayer and a large spin diffusion length with a weak temperature dependence. The results indicate that this polymer material can be used as a good medium for spintronic devices.
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43
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Zhang X, Ma Q, Suzuki K, Sugihara A, Qin G, Miyazaki T, Mizukami S. Magnetoresistance effect in rubrene-based spin valves at room temperature. ACS APPLIED MATERIALS & INTERFACES 2015; 7:4685-4692. [PMID: 25668508 DOI: 10.1021/am508173j] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We fabricate spin-valve devices with an Fe3O4/AlO/rubrene/Co stacking structure. Their magnetoresistance (MR) effects at room temperature and low temperatures are systemically investigated based on the measurement of MR curves, current-voltage response, etc. A large MR ratio of approximately 6% is achieved at room temperature, which is one of the highest MR ratios reported to date in organic spin valves. With decreasing measurement temperatures, we observe that the MR ratios increase because of decrease in spin scattering, and the width of the MR curves becomes larger owing to increase in the coercivity of the electrodes at low temperature. A nonlinear current-voltage dependence is clearly observed in these organic spin valves. From the measurement of MR curve for the spin valves with different rubrene layer thickness, we observe that the MR ratios monotonously decrease with increasing rubrene-layer thickness. We discuss the spin-dependent transport mechanisms in these devices based on our experimental results and the present theoretical analysis. Moreover, we note that the devices exhibit smaller MR ratios after annealing compared to their counterparts without annealing. On the basis of atomic force microscopy analysis of the organic films and device resistances, we deduce that the increase of interface spin scattering induced by large surface roughness after annealing most probably leads to reduction in the MR ratios.
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Affiliation(s)
- Xianmin Zhang
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), Northeastern University , Shenyang 110819, China
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44
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Sun D, Fang M, Xu X, Jiang L, Guo H, Wang Y, Yang W, Yin L, Snijders PC, Ward TZ, Gai Z, Zhang XG, Lee HN, Shen J. Active control of magnetoresistance of organic spin valves using ferroelectricity. Nat Commun 2014; 5:4396. [PMID: 25008155 PMCID: PMC4104453 DOI: 10.1038/ncomms5396] [Citation(s) in RCA: 43] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2013] [Accepted: 06/13/2014] [Indexed: 11/23/2022] Open
Abstract
Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves.
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Affiliation(s)
- Dali Sun
- State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
- These authors contributed equally to this work
- Present address: Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, USA
| | - Mei Fang
- State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China
- These authors contributed equally to this work
| | - Xiaoshan Xu
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Lu Jiang
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Hangwen Guo
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Yanmei Wang
- State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China
| | - Wenting Yang
- State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China
| | - Lifeng Yin
- State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China
| | - Paul C. Snijders
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - T. Z. Ward
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Zheng Gai
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - X.-G. Zhang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
- Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Ho Nyung Lee
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Jian Shen
- State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
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45
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Sun D, Ehrenfreund E, Valy Vardeny Z. The first decade of organic spintronics research. Chem Commun (Camb) 2014; 50:1781-93. [DOI: 10.1039/c3cc47126h] [Citation(s) in RCA: 145] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The significant milestones in organic spintronics achieved during the first decade of research are reviewed.
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Affiliation(s)
- Dali Sun
- Department of Physics and Astronomy
- University of Utah
- Salt Lake City, USA
| | - Eitan Ehrenfreund
- Physics Department
- Technion-Israel Institute of Technology
- Haifa, Israel
| | - Z. Valy Vardeny
- Department of Physics and Astronomy
- University of Utah
- Salt Lake City, USA
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46
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de Oliveira TVAG, Gobbi M, Porro JM, Hueso LE, Bittner AM. Charge and spin transport in PEDOT:PSS nanoscale lateral devices. NANOTECHNOLOGY 2013; 24:475201. [PMID: 24177495 DOI: 10.1088/0957-4484/24/47/475201] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
The electrical transport of the highly conductive poly-(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) is investigated with Ohmic and spin-polarized tunnel contacts at nanoscale lateral dimensions. Temperature-dependent charge transport measurements reveal that electrical conductivity scales non-linearly as a function of electrode spacing, which is attributed to the localization of carriers induced by the disorder introduced by the PSS polyelectrolyte. In addition, we demonstrate the integration of this conducting polymer in nanoscale lateral spin-valve devices by increasing the pH of the PEDOT:PSS solution. We present charge and magnetotransport measurement results of NiFe/AlOx/PEDOT:PSS/AlOx/NiFe lateral structures for various thicknesses of the alumina tunnel barriers. We discuss the absence of magnetoresistance of our spin valves within the framework of Valet-Fert theory, and estimate an upper limit for the spin lifetime of carriers in PEDOT:PSS to τsf ≤ 50 ns.
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47
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48
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Gorjizadeh N, Quek SY. Interface effects on tunneling magnetoresistance in organic spintronics with flexible amine-Au links. NANOTECHNOLOGY 2013; 24:415201. [PMID: 24060599 DOI: 10.1088/0957-4484/24/41/415201] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Organic spintronics is a promising emerging field, but the sign of the tunneling magnetoresistance (TMR) is highly sensitive to interface effects, a crucial hindrance to applications. A key breakthrough in molecular electronics was the discovery of amine-Au link groups that give a reproducible conductance. Using first-principles calculations, we predict that amine-Au links give improved reproducibility in organic spintronics junctions with Au-covered Fe leads. The Au layers allow only states with sp character to tunnel into the molecule, and the flexibility of amine-Au links results in a narrow range of TMR for a fixed number of Au layers. Even as the Au thickness changes, the TMR remains positive as long as the number of Au layers is the same on both sides of the junction. Since the number of Au layers on Fe surfaces or Fe nanoparticles can now be experimentally controlled, amine-Au links provide a route towards robust TMR in organic spintronics.
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Affiliation(s)
- Narjes Gorjizadeh
- Institute of High Performance Computing, Agency for Science, Technology and Research, Singapore
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49
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Direct observation of a highly spin-polarized organic spinterface at room temperature. Sci Rep 2013; 3:1272. [PMID: 23412079 PMCID: PMC3573342 DOI: 10.1038/srep01272] [Citation(s) in RCA: 108] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/11/2013] [Accepted: 01/11/2013] [Indexed: 11/20/2022] Open
Abstract
Organic semiconductors constitute promising candidates toward large-scale electronic circuits that are entirely spintronics-driven. Toward this goal, tunneling magnetoresistance values above 300% at low temperature suggested the presence of highly spin-polarized device interfaces. However, such spinterfaces have not been observed directly, let alone at room temperature. Thanks to experiments and theory on the model spinterface between phthalocyanine molecules and a Co single crystal surface, we clearly evidence a highly efficient spinterface. Spin-polarised direct and inverse photoemission experiments reveal a high degree of spin polarisation at room temperature at this interface. We measured a magnetic moment on the molecule's nitrogen π orbitals, which substantiates an ab-initio theoretical description of highly spin-polarised charge conduction across the interface due to differing spinterface formation mechanisms in each spin channel. We propose, through this example, a recipe to engineer simple organic-inorganic interfaces with remarkable spintronic properties that can endure well above room temperature.
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50
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Pokhodnya K, Bonner M, Prigodin V, Epstein AJ, Miller JS. Carrier transport in the V[TCNE]x (TCNE = tetracyanoethylene; x ~ 2) organic-based magnet. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2013; 25:196001. [PMID: 23604366 DOI: 10.1088/0953-8984/25/19/196001] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
The carrier transport of chemical vapor deposition (CVD) prepared films of the room temperature organic-based magnet V[TCNE]x (TCNE = tetracyanoethylene; x ~ 2) over a broad temperature and magnetic field range is reported. Due to disorder the [TCNE](·-) sites are located in statistically different environments, and their energies vary from site-to-site, which leads to tailing the density of states into the energy gap, creating electronic traps and suppressing the electron mobility. Conversely, these variations have little effect on the valence band derived from the octahedral V(II)3d(t(2g)) levels, and, hence, on the hole mobility. Presuming a Gaussian distribution of the energies of the localized states in the gap, a model that adequately describes the experimental data is proposed. In this model the T(-1) temperature dependent term was added to the Arrhenius activation energy, Ea, which effectively describes its decrease on cooling. The linear increase of positive magnetoresistance with magnetic field, as well as its weak temperature dependence [ is proportional to (1-T/Tc)(-1/2)] is discussed in terms of a small contribution to Ea associated with the change of magnetic energy.
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Affiliation(s)
- Konstantin Pokhodnya
- Center for Nanoscale Science and Engineering, North Dakota State University, Fargo, ND 58102, USA.
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