Enhancing ferroelectric photovoltaic effect by polar order engineering

Switchable Photovoltaic Effect and Robust Nonlinear Optical Response in a High-Temperature Molecular Ferroelectric [C8N2H22][PbI4]

Hybrid organic-inorganic molecular ferroelectrics (HOIMFs) have garnered significant attention for their potential applications in nonvolatile memory and spintronic devices. However, few efforts have been devoted to the photoelectric properties of lead halide molecular ferroelectrics, despite the fact that robust ferroelectricity and flexibility are desirable for thin-film photoelectric devices. Herein, we present a novel lead halide molecular ferroelectric [C8N2H22][PbI4] (1) synthesized hydrothermally. A polar monoclinic structure of 1 was solved by single-crystal X-ray diffraction and second-harmonic generation (SHG) tests. A direct band gap of 2.36 eV was confirmed by UV-vis spectrum and theoretical calculation. Hysteresis measurements demonstrated inherent room-temperature (RT) ferroelectricity in 1 with a spontaneous polarization (Ps) of 3.2 μC/cm2. The 1-based photoelectric device shows a notable photovoltaic (PV) effect with Voc ∼ 0.27 V, Jsc ∼ 38 nA/cm2 under AM 1.5 G illumination, and a rapid response time of ∼1.5 ms. A considerable enhancement in PV performance has been achieved by adjusting the ferroelectric polarization, resulting in a maximum Voc ∼ 0.75 V, Jsc ∼ 2.28 μA/cm2. Notably, 1 exhibits a rather large SHG signal, which is approximately 2.61-fold higher than that of KH2PO4 (KDP) upon a 1064 nm laser radiation. This study offers a bright avenue for lead halide molecular ferroelectrics as promising optoelectronic devices and SHG materials.

Bulk Photovoltaic Effect in High-Temperature Lead-Halide Molecular Ferroelectric [C4N2H14][PbI4]

Hybrid organic-inorganic molecular ferroelectrics (HOIMFs) have garnered significant attention owing to their potential applications in optoelectronic and spintronic devices. However, HOIMFs with high Curie temperature (Tc), narrow bandgap (Eg), excellent stability, and high breakdown voltage are still very rare. Herein, we present a novel lead-halide molecular ferroelectric, (1,4-butanediammonium)PbI4 (1), synthesized hydrothermally. 1 exhibits a ferroelectric-to-paraelectric phase transition with a high Curie temperature of 485 K, a room temperature ferroelectric hysteresis loop with a robust saturation polarization of 3.9 μC/cm2 and strong coercivity of 33 kV/cm, and a typical semiconductor behavior with a direct bandgap of 2.28 eV. Switchable photovoltaic effect was observed in 1-based device with a fast response time of ∼2 ms and high breakdown electric field of 80 kV/cm. Dramatically enhanced photovoltaic performance has been achieved by manipulating the ferroelectric polarization, resulting in a maximum photovoltage of Voc ∼ 0.84 V and a photocurrent of Jsc ∼ 33.31 nA/cm2 under standard AM 1.5 G illumination. This study offers a bright avenue for advancing high-Tc lead-halide molecular ferroelectrics with promising potentials in photodetectors, data storage, and logical switching devices.

Enhancement of the Piezocatalytic Response of La-Doped BiFeO3 Nanoparticles by Defects Synergy

Because of their intrinsic polarization and related properties, ferroelectrics attract significant attention to address energy transformation and environmental protection. Here, by using trivalent-ion-lanthanum doping of BiFeO3 nanoparticles (NPs), it is shown that defects and piezoelectric potential are synergized to achieve a high piezocatalytic effect for decomposing the model Rhodamine B (RhB) pollutant, reaching a record-high piezocatalytic rate of 21 360 L mol-1 min-1 (i.e., 100% RhB degradation within 20 min) that exceeds most state-of-the art ferroelectrics. The piezocatalytic Bi0.99La0.01FeO3 NPs are also demonstrated to be versatile toward various pharmaceutical pollutants with over 90% removal efficiency, making them extremely efficient piezocatalysts for water purification. It is also shown that 1% La-doping introduces oxygen vacancies and Fe2+ defects. It is thus suggested that oxygen vacancies act as both active sites and charge providers, permitting more surface adsorption sites for the piezocatalysis process, and additional charges and better energy transfer between the NPs and surrounding molecules. Furthermore, the oxygen vacancies are proposed to couple to Fe2+ to form defect dipoles, which in turn introduces an internal field, resulting in more efficient charge de-trapping and separation when added to the piezopotential. This synergistic mechanism is believed to provide a new perspective for designing future piezocatalysts with high performance.

Producing Freestanding Single-Crystal BaTiO3 Films through Full-Solution Deposition

Strontium aluminate, with suitable lattice parameters and environmentally friendly water solubility, has been strongly sought for use as a sacrificial layer in the preparation of freestanding perovskite oxide thin films in recent years. However, due to this material's inherent water solubility, the methods used for the preparation of epitaxial films have mainly been limited to high-vacuum techniques, which greatly limits these films' development. In this study, we prepared freestanding single-crystal perovskite oxide thin films on strontium aluminate using a simple, easy-to-develop, and low-cost chemical full-solution deposition technique. We demonstrate that a reasonable choice of solvent molecules can effectively reduce the damage to the strontium aluminate layer, allowing successful epitaxy of perovskite oxide thin films, such as 2-methoxyethanol and acetic acid. Molecular dynamics simulations further demonstrated that this is because of their stronger adsorption capacity on the strontium aluminate surface, which enables them to form an effective protective layer to inhibit the hydration reaction of strontium aluminate. Moreover, the freestanding film can still maintain stable ferroelectricity after release from the substrate, which provides an idea for the development of single-crystal perovskite oxide films and creates an opportunity for their development in the field of flexible electronic devices.

Colossal Ferroelectric Photovoltaic Effect in Inequivalent Double-Perovskite Bi2FeMnO6 Thin Films

Double perovskite films have been extensively studied for ferroelectric order, ferromagnetic order, and photovoltaic effects. The customized ion combinations and ordered ionic arrangements provide unique opportunities for bandgap engineering. Here, a synergistic strategy to induce chemical strain and charge compensation through inequivalent element substitution is proposed. A-site substitution of the barium ion is used to modify the chemical valence and defect density of the two B-site elements in Bi2FeMnO6 double perovskite epitaxial thin films. We dramatically increased the ferroelectric photovoltaic effect to ∼135.67 μA/cm2 from 30.62 μA/cm2, which is the highest in ferroelectric thin films with a thickness of less than 100 nm under white-light LED irradiation. More importantly, the ferroelectric polarization can effectively improve the photovoltaic efficiency of more than 5 times. High-resolution HAADF-STEM, synchrotron-based X-ray diffraction and absorption spectroscopy, and DFT calculations collectively demonstrate that inequivalent ion plays a dual role of chemical strain (+1.92 and -1.04 GPa) and charge balance, thereby introducing lattice distortion effects. The reduction of the oxygen vacancy density and the competing Jahn-Teller distortion of the oxygen octahedron are the main phenomena of the change in electron-orbital hybridization, which also leads to enhanced ferroelectric polarization values and optical absorption. The inequivalent strategy can be extended to other double perovskite systems and applied to other functional materials, such as photocatalysis for efficient defect control.

X-ray-Induced Pyroelectric Effect in a Perovskite Ferroelectric Drives Low Detection Limit Self-Powered Responses

The light-induced pyroelectric effect (LPE) has shown a great promise in the application of optoelectronic devices, especially for self-powered detection and imaging. However, it is quite challenging and scarce to achieve LPE in the X-ray region. For the first time, we report X-ray LPE in a single-phase ferroelectric of (NPA)2(EA)2Pb3Br10 (1, NPA = neopentylamine, EA = ethylamine), adopting a two-dimensional trilayered perovskite motif, which has a large spontaneous polarization of ∼3.7 μC/cm2. Its ferroelectricity allows for significant LPE in the wavelength range of ordinary visible light. Strikingly, the X-ray LPE is observed in 1, which endows remarkable self-powered X-ray responses at 0 bias, including sensitivity up to 225 μC Gy-1 cm-2 and a low detection limit of ∼83.4 nGy s-1, being almost 66 times lower than the requirement for medical diagnostics (∼5.5 μGy s-1). This work not only develops a new mode for X-ray detection but also provides valuable insights for future photoelectric device application.

Polarity Conversion of the Ag2S/AgInS2 Heterojunction by Radical-Induced Positive Feedback Polydopamine Adhesion for Signal-Switchable Photoelectrochemical Biosensing

Efficient tuning of the polarity of photoactive nanomaterials is of great importance in improving the performance of photoelectrochemical (PEC) sensing platforms. Herein, polarity of the Ag2S/AgInS2 heterojunction is converted by radical-induced positive feedback polydopamine (PDA) adhesion, which is further employed to develop a signal-switchable PEC biosensor. In the nanocomposites, Ag2S and AgInS2 achieve electron-hole separation, exhibiting a strong anodic PEC response. Under the irradiation of light, the Ag2S/AgInS2 heterojunction is able to produce superoxide radical and hydroxyl radical intermediate species, leading to the polymerization of dopamine (DA) and the subsequent adhesion of PDA onto the Ag2S/AgInS2 heterojunction (Ag2S/AgInS2@PDA). By constructing a new electron-transfer pathway with PDA, the polarity of the Ag2S/AgInS2 heterojunction is converted, and the PEC response changes from anodic to cathodic photocurrents. In addition, since the photoreduction activity of PDA is stronger than that of the Ag2S/AgInS2 heterojunction, more superoxide radical can be produced by Ag2S/AgInS2@PDA once PDA is generated, thereby promoting the generation of PDA. Consequently, a positive feedback mechanism is established to enhance the polarity conversion of the Ag2S/AgInS2 heterojunction and amplify the responding to DA. As a result, the bioanalytical method is capable of sensitively quantifying DA in 10 orders of magnitude with an ultralow limit of detection. Moreover, the applicability of this biosensor in real samples is identified by measuring DA in fetal bovine serum and compared with a commercial ELISA method. Overall, this work offers an alternative perspective for adjusting photogenerated carriers of nanomaterials and designing high-performance PEC biosensors.

Mixing cage cations in 2D metal-halide ferroelectrics enhances the ferro-pyro-phototronic effect for self-driven photopyroelectric detection

The ferro-pyro-phototronic (FPP) effect, coupling photoexcited pyroelectricity and photovoltaics, paves an effective way to modulate charge-carrier behavior of optoelectronic devices. However, reports of promising FPP-active systems remain quite scarce due to a lack of knowledge on the coupling mechanism. Here, we have successfully enhanced the FPP effect in a series of ferroelectrics, BA2Cs1-xMAxPb2Br7 (BA = butylammonium, MA = methylammonium, 0 ≤ x ≤ 0.34), rationally assembled by mixing cage cations into 2D metal-halide perovskites. Strikingly, chemical alloying of Cs+/MA+ cations leads to the reduction of exciton binding energy, as verified by the x = 0.34 component; this facilitates exciton dissociation into free charge-carriers and boosts photo-activities. The crystal detector thus displays enhanced FPP current at zero bias, almost more than 10 times higher than that of the x = 0 prototype. As an innovative study on the FPP effect, this work affords new insight into the fundamental principle of ferroelectrics and creates a new strategy for self-driven photodetection.

Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2

In future solar cell technologies, the thermodynamic Shockley-Queisser limit for solar-to-current conversion in traditional p-n junctions could potentially be overcome with a bulk photovoltaic effect by creating an inversion broken symmetry in piezoelectric or ferroelectric materials. Here, we unveiled mechanical distortion-induced bulk photovoltaic behavior in a two-dimensional (2D) material, MoTe2, caused by the phase transition and broken inversion symmetry in MoTe2. The phase transition from single-crystalline semiconducting 2H-MoTe2 to semimetallic 1T'-MoTe2 was confirmed using X-ray photoelectron spectroscopy (XPS). We used a micrometer-scale system to measure the absorption of energy, which reduced from 800 to 63 meV during phase transformation from hexagonal to distorted octahedral and revealed a smaller bandgap semimetallic behavior. Experimentally, a large bulk photovoltaic response is anticipated with the maximum photovoltage VOC = 16 mV and a positive signal of the ISC = 60 μA (400 nm, 90.4 Wcm-2) in the absence of an external electric field. The maximum values of both R and EQE were found to be 98 mAW-1 and 30%, respectively. Our findings are distinctive features of the photocurrent responses caused by in-plane polarity and its potential from a wide pool of established TMD-based nanomaterials and a cutting-edge approach to optimize the efficiency in converting photons-to-electricity for power harvesting optoelectronics devices.

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf0.5Zr0.5O2 Thin Films

The emergence of complementary metal-oxide semiconductor (CMOS)-compatible HfO2-based ferroelectric materials provides a promising way to achieve ferroelectric field-effect transistors (FeFETs) with a steep subthreshold swing (SS) reduced to below the Boltzmann thermodynamics limit (∼60 mV/dec at room temperature), which has important implications for lowering power consumption. In this work, a metal-oxide-semiconductor field-effect transistor (MOSFET) is connected with Hf0.5Zr0.5O2 (HZO)-based ferroelectric capacitors with different capacitances. By adjusting the capacitance of ferroelectric capacitors, an ultralow SS of ∼0.34 mV/dec in HfO2-based FeFETs can be achieved. More interestingly, by designing the sweeping voltage sequences, the SS can be adjusted to be 0 mV/dec with the drain current ranging over six orders of magnitude, and the threshold voltage for turning on the MOSFET can be further reduced. The manipulated SS could be attributed to the evolution of ferroelectric switching. Our work contributes to understanding the origin of ultralow SS in ferroelectric MOSFETs and the realization of low-power devices.

Two-dimensional (n = 1) ferroelectric film solar cells

Molecular ferroelectrics that have excellent ferroelectric properties, a low processing temperature, narrow bandgap, and which are lightweight, have shown great potential in the photovoltaic field. However, two-dimensional (2D) perovskite solar cells with high tunability, excellent photo-physical properties and superior long-term stability are limited by poor out-of-plane conductivity from intrinsic multi-quantum-well electronic structures. This work uses 2D molecular ferroelectric film as the absorbing layer to break the limit of multiple quantum wells. Our 2D ferroelectric solar cells achieve the highest open-circuit voltage (1.29 V) and the best efficiency (3.71%) among the 2D (n = 1) Ruddlesden-Popper perovskite solar cells due to the enhanced out-of-plane charge transport induced by molecular ferroelectrics with a strong saturation polarization, high Curie temperature and multiaxial characteristics. This work aims to break the inefficient out-of-plane charge transport caused by the limit of the multi-quantum-well electronic structure and improve the efficiency of 2D ferroelectric solar cells.

Revisiting the Ferroelectric Photovoltaic Properties of Vertical BiFeO3 Capacitors: A Comprehensive Study

The ferroelectric photovoltaic effect has been extensively studied for possible applications in energy conversion and photo-electrics. The reversible spontaneous polarization gives rise to a switchable photovoltaic behavior. However, despite its long history, the origin of the ferroelectric photovoltaic effect still lacks a full understanding since multiple mechanisms such as bulk and Schottky-barrier-related interface effects are involved. Herein, we report a comprehensive study on the photovoltaic response of BiFeO₃-based vertical heterostructures, using multiple strategies to clarify its origin. We found that, under white light illumination, polarization-modulated Schottky barrier at the interface is the dominating mechanism. By varying the top metal contacts, only the photovoltaic effect of the polarization downward state is strongly modulated, suggesting selective interface contribution in different polarization states. A Schottky-barrier-free device shows negligible photovoltaic effect, suggesting the lack of bulk photovoltaic effect in vertical heterostructures under white light illumination.

Theoretical study on ferroelectric nitrides with super-wurtzite structures for solar energy conversion applications

Polarized structured nitride semiconductors are attractive due to their unique and environment-friendly electronic properties. The stability, ferroelectricity and photocatalytic and photovoltaic properties of super-wurtzite Mg₂XN₃ (X = Bi, Mo, Nb, Sb, Ta, Tc and W) were determined based on first principles calculations in this study. The calculated results indicate that Mg₂XN₃ (X = Sb, Ta, Bi and Nb) are stable polar nitrides by phonon frequencies, elastic coefficients and ferroelectric analysis. Mg₂XN₃ (X = Sb, Ta and Nb) with large ferroelectric polarization strength could absorb ultraviolet light to promote photocatalytic water splitting for hydrogen production. Mg₂BiN₃ is a new excellent photovoltaic candidate due to its ideal energy band, high electron mobility, high absorption coefficient and large ferroelectric polarization strength.

Laser Processed Hybrid Lead-Free Thin Films for SAW Sensors

In this study we report the specific interaction of various gases on the modified surface of acoustic wave devices for gas sensor applications, using the piezoelectric ceramic material BaSrTiO₃ (BST), with different concentrations of Sr. For enhancing the sensitivity of the sensor, the conductive polymer polyethylenimine (PEI) was deposited on top of BST thin films. Thin films of BST were deposited by pulsed laser deposition (PLD) technique and integrated into a test heterostructure with PEI thin films deposited by matrix assisted pulsed laser evaporation (MAPLE) and interdigital Au electrodes (IDT). Further on, the layered heterostructures were incorporated into surface acoustic wave (SAW) devices, in order to measure the frequency response to various gases (N₂, CO₂ and O₂). The frequency responses of the sensors based on thin films of the piezoelectric material deposited at different pressures were compared with layered structures of PEI/BST, in order to observe differences in the frequency shifts between sensors. The SAW tests performed at room temperature revealed different results based on deposition condition (pressure of oxygen and the percent of strontium in BatiO₃ structure). Frequency shift responses were obtained for all the tested sensors in the case of a concentration of Sr x = 0.75, for all the analysed gases. The best frequency shifts among all sensors studied was obtained in the case of BST50 polymer sensor for CO₂ detection.

Origin of Ferroelectricity in BiFeO3-Based Solid Solutions

We investigate the origin of ferroelectricity in the BiFeO₃-LaFeO₃ system in rhombohedral R3c and tetragonal P4mm symmetries by ab initio density functional theory calculations and compare their electronic features with paraelectric orthorhombic Pnma symmetry. We show that a coherent accommodation of stereo-active lone pair electrons of Bi is the detrimental factor of ferroelectricity. A Bloch function arising from an indirect Bi_6p-Fe_3d hybridization mediated through O_2p is the primary origin of spontaneous polarization (P_s) in the rhombohedral system. In the orthorhombic system, a similar Bloch function was found, whereas a staggered accommodation of stereo-active lone pair electrons of Bi exclusively results in paraelectricity. A giant P_s reported in the tetragonal system originates from an orbital hybridization of Bi_6p and O_2p, where Fe-3d plays a minor role. The P_s in the rhombohedral system decreases with increasing La content, while that in the tetragonal system displays a discontinuous drop at a certain La content. We discuss the electronic factors affecting the P_s evolutions with La content.

Smart Sensing Multifunctionalities Based on Barium Strontium Titanate Thin Films

Sensors that have low power consumption, high scalability and the ability of rapidly detecting multitudinous external stimulus are of great value in cyber-physical interactive applications. Herein, we reported the fabrication of ferroelectric barium strontium titanate ((Ba70Sr30)TiO3, BST) thin films on silicon substrates by magnetron sputtering. The as-grown BST films have a pure perovskite structure and exhibit excellent ferroelectric characteristics, such as a remnant polarization of 2.4 μC/cm2, a ferro-to-paraelectric (tetragonal-to-cubic) phase transition temperature of 31.2 °C, and a broad optical bandgap of 3.58 eV. Capacitor-based sensors made from the BST films have shown an outstanding average sensitivity of 0.10 mV·Pa-1 in the 10-80 kPa regime and work extremely steadily over 1000 cycles. More importantly, utilizing the Pockels effect, optical manipulation in BST can be also realized by a smaller bias and its electro-optic coefficient reff is estimated to be 83.5 pmV-1, which is 2.6 times larger than in the current standard material (LiNbO3) for electro-optical devices. Our work established BST thin film as a powerful design paradigm toward on-chip integrations with diverse electronics into sensors via CMOS-comparable technique.

Achieving circularly polarized luminescence and large piezoelectric response in hybrid rare-earth double perovskite by a chirality induction strategy

Chirality, an intrinsic property of nature, has received increased attention in chemistry, biology, and materials science because it can induce optical rotation, ferroelectricity, nonlinear optical response, and other unique properties. Here, by introducing chirality into hybrid rare-earth double perovskites (HREDPs), we successfully designed and synthesized a pair of enantiomeric three-dimensional (3D) HREDPs, [(R)-N-methyl-3-hydroxylquinuclidinium]₂RbEu(NO₃)₆ (R1) and [(S)-N-methyl-3-hydroxylquinuclidinium]₂RbEu(NO₃)₆ (S1), which possess ferroelasticity, multiaxial ferroelectricity, high quantum yields (84.71% and 83.55%, respectively), and long fluorescence lifetimes (5.404 and 5.256 ms, respectively). Notably, the introduction of chirality induces the coupling of multiaxial ferroelectricity and ferroelasticity, which brings about a satisfactory large piezoelectric response (103 and 101 pC N^-1 for R1 and S1, respectively). Moreover, in combination with the chirality and outstanding photoluminescence properties, circularly polarized luminescence (CPL) was first realized in HREDPs. This work sheds light on the design strategy of molecule-based materials with a large piezoelectric response and excellent CPL activity, and will inspire researchers to further explore the role of chirality in the construction of novel multifunctional materials.

Magneto-Electric-Optical Coupling in Multiferroic BiFeO3 -Based Films

Manipulating ferroic orders and realizing their coupling in multiferroics at room temperature are promising for designing future multifunctional devices. Single external stimulation has been extensively proved to demonstrate the ability of ferroelastic switching in multiferroic oxides, which is crucial to bridge the ferroelectricity and magnetism. However, it is still challenging to directly realize multi-field-driven magnetoelectric coupling in multiferroic oxides as potential multifunctional electrical devices. Here, novel magneto-electric-optical coupling in multiferroic BiFeO₃ -based thin films at room temperature mediated by deterministic ferroelastic switching using piezoresponse/magnetic force microscopy and aberration-corrected transmission electron microscopy are shown. Reversible photoinduced ferroelastic switching exhibiting magnetoelectric responses is confirmed in BiFeO₃ -based films, which works at flexible strain states. This work directly demonstrates room-temperature magneto-electric-optical coupling in multiferroic films, which provides a framework for designing potential multi-field-driven magnetoelectric devices such as energy conservation memories.

Thin-Film Ferroelectrics

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.

Tailoring Interlayered Spacers of Two-Dimensional Cesium-Based Perovskite Ferroelectrics toward Exceptional Ferro-Pyro-Phototronic Effects

Ferro-pyro-phototronic (FPP) effect is a triple coupling of ferroelectricity, light-induced pyroelectricity, and photo-excitation, which holds a bright promise for next-generation modern optoelectronic devices. However, except for few oxides (e.g., BaTiO₃ ), new FPP-active candidates remain extremely scarce due to the knowledge lacking on the underlying role of three coupling components. By tailoring the interlayered spacers, the authors present a series of 2D cesium-based perovskite ferroelectrics, (A')₂ CsPb₂ Br₇ (where A'-site cation is organic spacer), showing remarkable FPP-active properties. As expected, the dynamic ordering and reorientation of spacers along with atomic displacement of Cs⁺ in the perovskite cavity lead to their ferroelectric polarizations. Particularly, exceptional FPP properties are created through this cooperation; the most FPP-active candidate (n-hexylammonium)₂ CsPb₂ Br₇ endows a giant contrast up to 1500% for photopyroelectric current to photovoltaic signal. This figure-of-merit is far beyond most inorganic oxide counterparts, such as ≈110% for BaTiO₃ . Further, the electric switching and controlling of FPP directions confirm a crucial role of ferroelectric polarization to this coupling effect. To the authors' best knowledge, this is the first study on an FPP-active candidate of 2D hybrid perovskites, which affords a new avenue to design ferroelectrics with targeted physical properties and forward their potentials to smart optoelectronic device application.

Solid-Ionic Memory in a van der Waals Heterostructure

Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS₂/BiFeO₃/SrTiO₃ van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 10⁶ (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 10⁴ A/W) and photodetectivity (2.12 × 10¹³ Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.

Theoretical study on the ferroelectric and light absorption properties of Li2SbBiO6 for harvesting visible light

Ferroelectric oxides with large bandgaps have restricted applications in photovoltaic and photocatalytic fields. Based on recent experiments with the ferroelectric compound, LiSbO₃, the stability and optoelectronic properties of a new ferroelectric compound, namely Li₂SbBiO₆, are investigated in this study. The calculated results demonstrate that Li₂SbBiO₆ satisfies the stability conditions of the elastic coefficients and phonon dynamics. Li₂SbBiO₆ maintains the ferroelectric polarization strength of LiSbO₃ and significantly reduces the bandgap, and thus has been explored for applications in photovoltaic and photocatalytic fields. Li₂SbBiO₆ is a new potential ferroelectric oxide for harvesting visible light owing to its suitable bandgap and a large hole–electron effective mass ratio.

Li₂SbBiO₆ slightly improves the ferroelectric polarization of LiSbO₃ and significantly reduces the band gap to expand its applications in photovoltaic and photocatalysis under visible light.

Optoelectronic Memory Capacitor Based on Manipulation of Ferroelectric Properties

Here, we report on the fabrication of an optoelectronic memcapacitor (memory capacitor) by manipulation of ferroelectric properties through the ferroelectric-semiconductor interface based on a ZnO/PZT (Pb1.1(Zr0.52Ti0.48)O3) capacitor. A ZnO layer was deposited on PZT by the chemical vapor deposition method to achieve the memcapacitive effect. The capacitance-voltage and time-dependent capacitance characteristics of the Al/ZnO/PZT/Al memcapacitor were used as the main outcome measurement. In an asymmetric PZT structure with a ZnO layer, two stable states in the capacitance were obtained, which can be written by either optical or electrical pulses. In addition, the illuminated capacitive characters of the device showed a photovoltaic effect that is sensitive to wavelengths and can be used for nondestructive readout. Thus, this work proposes a low-cost structure solid-state memcapacitor exhibiting the promising potential for memory and computation applications with the ability to program and readout by electrical or optical signals.

Integrating Band Engineering and the Flexoelectric Effect Induced by a Composition Gradient for High Photocurrent Density in Bismuth Ferrite Films

Photovoltaic energy as one of the important alternatives to traditional fossil fuels has always been a research hot spot in the field of renewable and clean solar energy. Very recently, the anomalous ferroelectric photovoltaic effect in multiferroic bismuth ferrite (BiFeO₃) has attracted much attention due to the above-bandgap photovoltage and switchable photocurrent. However, its photocurrent density mostly in the magnitudes of μA/cm² resulted in a poor power conversion efficiency, which severely hampered its practical application as a photovoltaic device. In this case, a novel approach was designed to improve the photocurrent density of BiFeO₃ through the cooperative effect of the gradient distribution of oxygen vacancies and consequently induced the flexoelectric effect realized in the (La, Co) gradient-doped BiFeO₃ multilayers. Subsequent results and analysis indicated that the photocurrent density of the gradient-doped multilayer BiFeO₃ sample was nearly 3 times as much as that of the conventional doped single-layer sample. Furthermore, a possible mechanism was proposed herein to demonstrate roles of band engineering and the flexoelectric effect on the photovoltaic performance of the gradient-doped BiFeO₃ film.

Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices

Multiferroics are being studied increasingly in applications of photovoltaic devices for the carrier separation driven by polarization and magnetization. In this work, textured black silicon photovoltaic devices are fabricated with Bi6Fe1.6Co0.2Ni0.2Ti3O18/Bi2FeCrO6 (BFCNT/BFCO) multiferroic heterojunction as an absorber and graphene as an anode. The structural and optical analyses showed that the bandgap of Aurivillius-typed BFCNT and double perovskite BFCO are 1.62 ± 0.04 eV and 1.74 ± 0.04 eV respectively, meeting the requirements for the active layer in solar cells. Under the simulated AM 1.5 G illumination, the black silicon photovoltaic devices delivered a photoconversion efficiency (η) of 3.9% with open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) of 0.75 V, 10.8 mA cm-2, and 48.3%, respectively. Analyses of modulation of an applied electric and magnetic field on the photovoltaic properties revealed that both polarization and magnetization of multiferroics play an important role in tuning the built-in electric field and the transport mechanisms of charge carriers, thus providing a new idea for the design of future high-performance multiferroic oxide photovoltaic devices.

Enhancing the bulk photovoltaic effect by tuning domain walls in epitaxial BiFeO3films

In this letter, the role of domain wall (DW) on bulk photovoltaic effect (BPV) effect in BiFeO₃(BFO) films was studied by x-ray reciprocal space mapping and conductive atomic force microscope. It was found that the domain structure and DW can be tuned by controlling the epitaxial orientation of BFO film. Remarkably, under 1 sun AM 1.5 G illumination, the 109° DW enhances the transport of photogenerated carriers and simultaneously improves the conductivity and power conversion efficiency (PCE). The short-circuit current density and PCE can reach 171.15μA cm^-2and 0.1127%, respectively. Therefore, our study reveals the correlation between the DW and the BPV effect in BFO film and provides a new pathway to improve the PCE of BFO-based photovoltaic device.

Flexo-photovoltaic effect in MoS2

The theoretical Shockley-Queisser limit of photon-electricity conversion in a conventional p-n junction could be potentially overcome by the bulk photovoltaic effect that uniquely occurs in non-centrosymmetric materials. Using strain-gradient engineering, the flexo-photovoltaic effect, that is, the strain-gradient-induced bulk photovoltaic effect, can be activated in centrosymmetric semiconductors, considerably expanding material choices for future sensing and energy applications. Here we report an experimental demonstration of the flexo-photovoltaic effect in an archetypal two-dimensional material, MoS₂, by using a strain-gradient engineering approach based on the structural inhomogeneity and phase transition of a hybrid system consisting of MoS₂ and VO₂. The experimental bulk photovoltaic coefficient in MoS₂ is orders of magnitude higher than that in most non-centrosymmetric materials. Our findings unveil the fundamental relation between the flexo-photovoltaic effect and a strain gradient in low-dimensional materials, which could potentially inspire the exploration of new optoelectronic phenomena in strain-gradient-engineered materials.

Effect of polarization rotation on the optical and photovoltaic properties of BiFeO3thin films

Visible-light-active ferroelectric materials are gaining increasing attention due to the unique ferroelectric photovoltaic effect. To boost the light harvesting capability, vast research is devoted to band gap engineering by chemical substitutions, regardless of the side effect on ferroelectric polarization. Here, we focus on how polar order affects the optical and photovoltaic properties. Using BiFeO₃as the model system, we induce the polarization rotation by A-site La substitution, which results in continuous reduction of optical anisotropy of the samples, as revealed by the concerted optical characterizations. This further causes the decrease of angular dependence of ferroelectric photovoltaic effect on the light polarization. The results demonstrate the inner connection of the ferroelectric polarization and optical anisotropy via the lattice degree of freedom.

Interface-induced transition from Schottky-to-Ohmic contact in Sc2CO2-based multiferroic heterojunctions

In order to achieve a multiferroic heterojunction with a low resistance contact, we investigated a series of Sc2CO2-based van der Waals (vdW) multiferroic heterojunctions in which the ferromagnetics (1T-MnSe2, 1T-VSe2, and 1T-VTe2) were selected as the contact electrodes in terms of first-principles calculations. By reversing the polarization state of Sc2CO2 from Sc-P↑ to Sc-P↓, we found that the heterojunctions converted from Schottky-to-Ohmic contact. Moreover, this conversion, accompanied by an interface charge transfer is intrinsic and is not regulated by the interlayer spacing and biaxial strain. This work provides an avenue for the design of two-dimensional Sc2CO2-based multiferroic electronics in the future.

Linear bulk photovoltaic effect and phenomenological study in multi-phase co-existing ferroelectric system

Ferroelectric systems with multi-phase co-existence are found to exhibit anomalous photovoltaic response. In this work, detailed photovoltaic studies are carried out under 405 nm light illumination on Ba1-x(Bi0.5Li0.5)xTiO3ferroelectric oxides having the co-existence of tetragonal and orthorhombic phases. The linear and sinusoidal photocurrent-dependence as a function of light intensity and polarization-direction, respectively elucidate the experimental evidence for linear bulk-photovoltaic effect. Importantly, the temperature-dependent photovoltaic studies display 2-fold enhancement in photovoltage near the ferroelectric transition temperature (TC). The observed features in photovoltage follow inverse temperature-dependence of the photoconductivity. The linear relationship between the calculated bulk-photovoltaic tensor component and the photocurrent established from the proposed phenomenological model is verified through their composition-dependent studies. These studies provide the desired design parameters to engineer the ferroelectric system for better photovoltaic characteristics suitable for device applications.

Large Switchable Photoconduction within 2D Potential Well of a Layered Ferroelectric Heterostructure

The coexistence of large conductivity and robust ferroelectricity is promising for high-performance ferroelectric devices based on polarization-controllable highly efficient carrier transport. Distinct from traditional perovskite ferroelectrics, Bi₂ WO₆ with a layered structure shows a great potential to preserve its ferroelectricity under substantial electron doping. Herein, by artificial design of photosensitive heterostructures with desired band alignment, three orders of magnitude enhancement of the short-circuit photocurrent is achieved in Bi₂ WO₆ /SrTiO₃ at room temperature. The microscopic mechanism of this large photocurrent originates from separated transport of electrons and holes in [WO₄ ]^-2 and [Bi₂ O₂ ]⁺² layers respectively with a large in-plane conductivity, which is understood by a combination of ab initio calculations and spectroscopic measurements. The layered electronic structure and appropriately designed band alignment in this layered ferroelectric heterostructure provide an opportunity to achieve high-performance and nonvolatile switchable electronic devices.

Physical vapor deposited organic ferroelectric diisopropylammonium bromide film and its self-powered photodetector characteristics

Organic diisopropylammonium bromide (DIPAB) is a promising material with superior ferroelectric characteristics. However, the DIPAB continuous film, which is essential to explore its application potential, is challenging because its crystallization kinetics favors island-like microcrystalline growth. In this work, the continuous and uniform deposition of organic ferroelectric DIPAB film on a single crystalline Si(100) substrate is demonstrated by a thermal evaporation process. Structural and optical studies reveal that the film is c-axis oriented with an optical bandgap of 3.52 eV. The topographic image displays well-connected grain-like surface morphology with ∼2 nm roughness. The ferroelectric domain studies illustrate the in-plane orientation of the domains, which is in accordance with c-axis oriented film where polarization is along the in-plane b-axis. The phase and amplitude responses of the domains display hysteresis and butterfly characteristics, respectively and thereby endorse the ferroelectric nature of the film. Importantly, it is demonstrated that the DIPAB film exhibits remarkable self-powered UV-Vis photodetector characteristics with responsivity of 0.66 mA W^-1 and detectivity of 2.20 × 10⁹ Jones at 11.45 mW cm^-2 light intensity. The fabricated DIPAB film reported in this work can widen its application potential in self-powered photodetector and other optoelectronic devices.

Continuously controllable photoconductance in freestanding BiFeO3 by the macroscopic flexoelectric effect

Flexoelectricity induced by the strain gradient is attracting much attention due to its potential applications in electronic devices. Here, by combining a tunable flexoelectric effect and the ferroelectric photovoltaic effect, we demonstrate the continuous tunability of photoconductance in BiFeO3 films. The BiFeO3 film epitaxially grown on SrTiO3 is transferred to a flexible substrate by dissolving a sacrificing layer. The tunable flexoelectricity is achieved by bending the flexible substrate which induces a nonuniform lattice distortion in BiFeO3 and thus influences the inversion asymmetry of the film. Multilevel conductance is thus realized through the coupling between flexoelectric and ferroelectric photovoltaic effect in freestanding BiFeO3. The strain gradient induced multilevel photoconductance shows very good reproducibility by bending the flexible BiFeO3 device. This control strategy offers an alternative degree of freedom to tailor the physical properties of flexible devices and thus provides a compelling toolbox for flexible materials in a wide range of applications.

Structure, Performance, and Application of BiFeO3 Nanomaterials

Multiferroic nanomaterials have attracted great interest due to simultaneous two or more properties such as ferroelectricity, ferromagnetism, and ferroelasticity, which can promise a broad application in multifunctional, low-power consumption, environmentally friendly devices. Bismuth ferrite (BiFeO3, BFO) exhibits both (anti)ferromagnetic and ferroelectric properties at room temperature. Thus, it has played an increasingly important role in multiferroic system. In this review, we systematically discussed the developments of BFO nanomaterials including morphology, structures, properties, and potential applications in multiferroic devices with novel functions. Even the opportunities and challenges were all analyzed and summarized. We hope this review can act as an updating and encourage more researchers to push on the development of BFO nanomaterials in the future.

Tailoring the photovoltaic effect in (1 1 1) oriented BiFeO3/LaFeO3 superlattices

Ferroelectric and photovoltaic properties of (BiFeO₃)_(1-x)Λ/(LaFeO₃) _xΛ superlattices grown by pulsed laser deposition have been investigated (Λ being the bilayer thickness). For a high concentration of BiFeO₃ a ferroelectric state is observed simultaneously with a switchable photovoltaic response. In contrast for certain concentration of LaFeO₃ a non-switchable photovoltaic effect is evidenced. Such modulation of the PV response in the superlattices is attributed to the ferroelectric to paraelectric phase transition which is controlled with the increase of x. Remarkably, concomitant to this change of PV mechanism, a change of the conduction mechanism also seems to take place from a bulk-limited to an interface-limited transport as x increases.

Improved ferroelectric properties and band-gap tuning in BiFeO3 films via substitution of Mn

Multiferroic BiFe1-x Mn x O3 (x = 0, 0.04, 0.08, 0.12) films have been prepared on Pt/Ti/SiO2/Si and ITO/glass substrates via the solution-gelation technique. The impacts of Mn doping of BFO thin films on the structure, morphology, leakage current, ferroelectric properties and optical band gap have been systematic investigated. From the XRD patterns, all samples match well with the perovskite structure without an impurity phase and the thin films exhibit dense and smooth microstructure. A leakage current density of 1.10 × 10-6 A cm-2 which is about four orders of magnitude lower than that of pure BiFeO3 was observed for the 8% Mn doped BFO thin film at an external electric field <150 kV cm-1. An increase in the remnant polarization with Mn substitution was observed, with a maximum value of ∼19 μC cm-2 for the 8% Mn-substituted film. Moreover, optical absorption spectra indicate that the doping of Mn has an effect on the energy band structure. Compared with pure BiFeO3, Mn doped thin films present an intense red shift as shown in the UV-visible diffuse absorption together with the decreased direct and indirect optical band gaps. In addition, this work gives insight into the relationship between ferroelectric remnant polarization and band-gap and finds that the optical band gap decreases with the increase of residual polarization.

Conjuncted Pyro-Piezoelectric Effect for Self-Powered Simultaneous Temperature and Pressure Sensing

Ferroelectric materials use both the pyroelectric effect and piezoelectric effect for energy conversion. A ferroelectric BaTiO₃ -based pyro-piezoelectric sensor system is demonstrated to detect temperature and pressure simultaneously. The voltage signal of the device is found to enhance with increasing temperature difference with a sensitivity of about 0.048 V °C^-1 and with applied pressure with a sensitivity of about 0.044 V kPa^-1 . Moreover, no interference appears in the output voltage signals when piezoelectricity and pyroelectricity are conjuncted in the device. A novel 4 × 4 array sensor system is developed to sense real-time temperature and pressure variations induced by a finger. This system has potential applications in machine intelligence and man-machine interaction.

GdFe0.8Ni0.2O3: A Multiferroic Material for Low-Power Spintronic Devices with High Storage Capacity

Multiferroic materials are strong candidates for reducing the energy consumption of voltage-controlled spintronic devices because of the coexistence of ferroelectric (FE) and magnetic orders in a single phase. In this article, we present a new multiferroic perovskite, GdNi_xFe_1-xO₃ (GFNO), produced via sputtering on a SrTiO₃ substrate. The proposed GFNO is FE and canted antiferromagnetic (AFM) within a monoclinic framework at room temperature. The FE polarization of the GFNO is up to 37 μC/cm². When capped with a Co layer, the resulting heterostructure exhibits voltage-controlled magnetism (VCM). The heterostructured device exhibits two distinct features. First, its VCM depends on the magnitude as well as the polarity of the applied bias, thereby doubling the number of available magnetic readout states under a fixed voltage. Furthermore, the magnetic order of the device can be controlled very effectively within ±1 V. These two characteristics satisfy the requirements for low-power and high-storage technology. Theoretical analysis and experimental results indicate the importance of Ni dopant in regulating the polarity-dependent multiferroicity of this gadolinium ferrite system.

Manipulation of Oxygen Vacancy for High Photovoltaic Output in Bismuth Ferrite Films

Very recently, the ferroelectric photovoltaic property of bismuth ferrite (BiFeO₃, BFO) has attracted much attention. However, the physical mechanisms for its anomalous photovoltaic effect and switchable photovoltaic effect are still largely unclear. Herein, a novel design was proposed to realize a high photovoltaic output in BiFeO₃ films by manipulating its oxygen vacancy concentration through the alteration of the Bi content. Subsequent results and analysis manifested that the highest photovoltaic output was achieved in Bi_1.05FeO₃ films, differing 1000 times from that of Bi_0.95FeO₃ films. Simultaneously, the origin of photovoltaic effect in all BiFeO₃ films was suggested as the bulk photovoltaic mechanism instead of the Schottky effect. Moreover, oxygen vacancy migration should be the dominant factor determining the switchable photovoltaic effect rather than the ferroelectric polarization. A switchable Schottky-to-Ohmic interfacial contact model was proposed to illustrate the observed switchable photovoltaic or diodelike effect. Therefore, the present work may open a new way to realize the high power output and controllable photovoltaic switching behavior for the photovoltaic applications of BiFeO₃ compounds.

Perovskites with d-block metals for solar energy applications

Pb2+ halide organic-inorganic perovskites are excellent semiconductors for use in solar energy applications, but at the expense of robustness and environmental compatibility. Tin (Sn), which sits just above lead in the periodic table, forms pure (or mixed with lead) perovskites when at the 2+ or 4+ oxidation state. It can act as a promising alternative; however, there are still some serious concerns regarding its suitability. This presents a major challenge; viable metal cations have to be identified. A good number of elements, originating from a large range of d-block metal ions, with adequate oxidation states, moderate toxicity, and relative abundance, seem ideal for this purpose. In this review, we present the most characteristic perovskites (conventional perovskites, layered, or double perovskites) that can be formed with the help of these metals. We focus on d-block metal ions with stable oxidation states, such as Ag+ or Ti4+, which have exhibited satisfactory photovoltaic properties until now. Further, we highlight the results involving compounds other than halide perovskites, such as oxides, chalcogenides, and nitrides (as well as oxyhalides, oxysulfides, and oxynitrides); a few of them are ferroelectric (based on Ti4+, Zr4+, Fe3+, and Cr3+) and can yield a photovoltage that exceeds the bandgap of the material. Finally, we present the critical challenges that currently limit the efficiency of these systems and propose prospects for future directions.

Tuning Photovoltaic Performance of Perovskite Nickelates Heterostructures by Changing the A-Site Rare-Earth Element

Perovskite rare-earth nickelates (RNiO₃) have attracted much attention because of their exotic physical properties and rich potential applications. Here, we report systematic tuning of the electronic structures of RNiO₃ (R = Nd, Sm, Gd, and Lu) by isovalent A-site substitution. By integrating RNiO₃ thin films with Nb-doped SrTiO₃ (NSTO), p-n heterojunction photovoltaic cells have been prepared and their performance has been investigated. The open-circuit voltage increases monotonically with decreasing A-site cation radius. This change results in a downward shift of the Fermi level and induces an increase in the built-in potential at the RNiO₃/NSTO heterojunction, with LuNiO₃/NSTO showing the largest open-circuit voltage. At the same time, the short-circuit current initially increases upon changing the A-site element from Nd to Sm. However, the larger bandgaps of GdNiO₃ and LuNiO₃ reduce light absorption which in turn induces a decrease in the short-circuit current. A power conversion efficiency of 1.13% has been achieved by inserting an ultrathin insulating SrTiO₃ layer at the SmNiO₃/NSTO interface. Our study illustrates how changing the A-site cation is an effective strategy for tuning photovoltaic performance and sheds light on which A-site element is the best for photovoltaic applications, which can significantly increase the applicability of nickelates in optoelectric devices.

Controllable defect driven symmetry change and domain structure evolution in BiFeO3 with enhanced tetragonality

Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, the accurate control of the concentration of defects remains a big challenge. In this work, ion implantation, which can provide controllable point defects, allows us to produce a controlled defect driven true super-tetragonal (T) phase with a single-domain-state in ferroelectric BiFeO3 thin films. This point-defect engineering is found to drive the phase transition from the as-grown mixed rhombohedral-like (R) and tetragonal-like (MC) phase to true tetragonal (T) symmetry and induce the stripe multi-nanodomains to a single domain state. By further increasing the injected dose of the He ion, we demonstrate an enhanced tetragonality super-tetragonal (super-T) phase with the largest c/a ratio of ∼1.3 that has ever been experimentally achieved in BiFeO3. A combination of the morphology change and domain evolution further confirms that the mixed R/MC phase structure transforms to the single-domain-state true tetragonal phase. Moreover, the re-emergence of the R phase and in-plane nanoscale multi-domains after heat treatment reveal the memory effect and reversible phase transition and domain evolution. Our findings demonstrate the reversible control of R-Mc-T-super T symmetry changes (leading to the creation of true T phase BiFeO3 with enhanced tetragonality) and multidomain-single domain structure evolution through controllable defect engineering. This work also provides a pathway to generate large tetragonality (or c/a ratio) that could be extended to other ferroelectric material systems (such as PbTiO3, BaTiO3 and HfO2) which might lead to strong polarization enhancement.

A Ferroelectric-Photovoltaic Effect in SbSI Nanowires

A ferroelectric-photovoltaic effect in nanowires of antimony sulfoiodide (SbSI) is presented for the first time. Sonochemically prepared SbSI nanowires have been characterized using high-resolution transmission electron microscopy (HRTEM) and optical diffuse reflection spectroscopy (DRS). The temperature dependences of electrical properties of the fabricated SbSI nanowires have been investigated too. The indirect forbidden energy gap E_gIf = 1.862 (1) eV and Curie temperature T_C = 291 (2) K of SbSI nanowires have been determined. Aligned SbSI nanowires have been deposited in an electric field between Pt electrodes on alumina substrate. The photoelectrical response of such a prepared ferroelectric-photovoltaic (FE-PV) device can be switched using a poling electric field and depends on light intensity. The photovoltage, generated under λ = 488 nm illumination of P_opt = 127 mW/cm² optical power density, has reached U_OC = 0.119 (2) V. The presented SbSI FE-PV device is promising for solar energy harvesting as well as for application in non-volatile memories based on the photovoltaic effect.

Designing Morphotropic Phase Composition in BiFeO3

In classical morphotropic piezoelectric materials, rhombohedral and tetragonal phase variants can energetically compete to form a mixed phase regime with improved functional properties. While the discovery of morphotropic-like phases in multiferroic BiFeO₃ films has broadened this definition, accessing these phase spaces is still typically accomplished through isovalent substitution or heteroepitaxial strain which do not allow for continuous modification of phase composition postsynthesis. Here, we show that it is possible to use low-energy helium implantation to tailor morphotropic phases of epitaxial BiFeO₃ films postsynthesis in a continuous and iterative manner. Applying this strain doping approach to morphotropic films creates a new phase space based on internal and external lattice stress that can be seen as an analogue to temperature-composition phase diagrams of classical morphotropic ferroelectric systems.