All-optical detection of interfacial spin transparency from spin pumping in β-Ta/CoFeB thin films

Above-Curie-temperature ultrafast terahertz emission and spin current generation in a 2D superlattice (Fe3GeTe2/CrSb)3

The increasing demand for denser information storage and faster data processing has fueled a keen interest in exploring spin currents up to terahertz (THz) frequencies. Emergent 2D intrinsic magnetic materials constitute a novel and highly controllable platform to access such femtosecond spin dynamics at atomic layer thickness. However, the function of 2D van der Waals magnets are limited by their Curie temperatures, which are usually low. Here, in a 2D superlattice (Fe3GeTe2/CrSb)3, we demonstrate ultrafast laser-induced spin current generation and THz radiation at room temperature, overcoming the challenge of the Curie temperature of Fe3GeTe2 being only 206 K. In tandem with time-resolved magneto-optical Kerr effect measurements and first-principles calculations, we further elucidate the origin of the spin currents-a laser-enhanced proximity effect manifested as a laser-induced reduction of interlayer distance and enhanced electron exchange interactions, which causes transient spin polarization in the heterostructure. Our findings present an innovative, magnetic-element-free route for generating ultrafast spin currents within the 2D limit, underscoring the significant potential of laser THz emission spectroscopy in investigating laser-induced extraordinary spin dynamics.

Collinear Spin Current Induced by Artificial Modulation of Interfacial Symmetry

Current induced spin-orbit torque (SOT) manipulation of magnetization is pivotal in spintronic devices. However, its application for perpendicular magnetic anisotropy magnets, crucial for high-density storage and memory devices, remains nondeterministic and inefficient. Here, a highly efficient approach is demonstrated to generate collinear spin currents by artificial modulation of interfacial symmetry, achieving 100% current-induced field-free SOT switching in CoFeB multilayers with perpendicular magnetization on stepped Al2O3 substrates. This field-free switching is primarily driven by the out-of-plane anti-damping SOT generated by the planar spin Hall effect (PSHE), resulting from reduced interface symmetry due to orientation-determined steps. Microscopic theoretical analysis confirms the presence and significance of PSHE in this process. Notably, this method for generating out-of-plane spin polarization along the collinear direction of the spin-current with artificial modulation of interfacial symmetry, overcomes inherent material symmetry constraints. These findings provide a promising avenue for universal control of spin-orbit torque, addressing challenges associated with low crystal symmetry and highlighting its great potential to advance the development of energy-efficient spintronic devices technology.

Colossal anisotropic absorption of spin currents induced by chirality

The chiral induced spin selectivity (CISS) effect, in which the structural chirality of a material determines the preference for the transmission of electrons with one spin orientation over that of the other, is emerging as a design principle for creating next-generation spintronic devices. CISS implies that the spin preference of chiral structures persists upon injection of pure spin currents and can act as a spin analyzer without the need for a ferromagnet. Here, we report an anomalous spin current absorption in chiral metal oxides that manifests a colossal anisotropic nonlocal Gilbert damping with a maximum-to-minimum ratio of up to 1000%. A twofold symmetry of the damping is shown to result from differential spin transmission and backscattering that arise from chirality-induced spin splitting along the chiral axis. These studies reveal the rich interplay of chirality and spin dynamics and identify how chiral materials can be implemented to direct the transport of spin current.

Enhancing Magnetic Damping under GaAs Band-Edge Photoexcitation in a Co2FeAl/n-GaAs Heterojunction

The ultrafast manipulation of spin in ferromagnet-semiconductor (FM/SC) heterojunctions is a key issue for advancing spintronics, where magnetic damping and interfacial spin transport often define device efficiency. Leveraging selective optical excitation in semiconductors offers a unique approach to spin manipulation in FM/SC heterojunctions. Herein, we investigated the magnetic dynamics of a Co2FeAl/n-GaAs heterojunction using the time-resolved magneto-optical Kerr technique and observed the considerably enhanced magnetic damping of Co2FeAl when GaAs is photoexcited near its band edge. This enhancement is attributed to an enhanced spin-pumping effect facilitated by spin-dependent carrier tunneling and capture within the Co2FeAl layer. Moreover, circularly polarized light excites spin-polarized band-edge photocarriers, further impacting the magnetic damping of Co2FeAl through an additional optical spin-transfer torque on the magnetic moment of Co2FeAl. Our results provide a valuable reference for manipulating spin-pumping and interfacial spin transport in FM/SC heterojunctions, showcasing the advantage of optical control of semiconductor photocarriers for the ultrafast manipulation of magnetic dynamics and interfacial spin transfer.

Thickness-Dependent Gilbert Damping and Soft Magnetism in Metal/Co-Fe-B/Metal Sandwich Structure

The achievement of the low Gilbert damping parameter in spin dynamic modulation is attractive for spintronic devices with low energy consumption and high speed. Metallic ferromagnetic alloy Co-Fe-B is a possible candidate due to its high compatibility with spintronic technologies. Here, we report thickness-dependent damping and soft magnetism in Co-Fe-B films sandwiched between two non-magnetic layers with Co-Fe-B films up to 50 nm thick. A non-monotonic variation of Co-Fe-B film damping with thickness is observed, which is in contrast to previously reported monotonic trends. The minimum damping and the corresponding Co-Fe-B thickness vary significantly among the different non-magnetic layer series, indicating that the structure selection significantly alters the relative contributions of various damping mechanisms. Thus, we developed a quantitative method to distinguish intrinsic from extrinsic damping via ferromagnetic resonance measurements of thickness-dependent damping rather than the traditional numerical calculation method. By separating extrinsic and intrinsic damping, each mechanism affecting the total damping of Co-Fe-B films in sandwich structures is analyzed in detail. Our findings have revealed that the thickness-dependent damping measurement is an effective tool for quantitatively investigating different damping mechanisms. This investigation provides an understanding of underlying mechanisms and opens up avenues for achieving low damping in Co-Fe-B alloy film, which is beneficial for the applications in spintronic devices design and optimization.

Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications

Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.

Anisotropy of magnetic damping in Ta/CoFeB/MgO heterostructures

Magnetic damping controls the performance and operational speed of many spintronics devices. Being a tensor quantity, the damping in magnetic thin films often shows anisotropic behavior with the magnetization orientation. Here, we have studied the anisotropy of damping in Ta/CoFeB/MgO heterostructures, deposited on thermally oxidized Si substrates, as a function of the orientation of magnetization. By performing ferromagnetic resonance (FMR) measurements based on spin pumping and inverse spin Hall effect (ISHE), we extract the damping parameter in those films and find that the anisotropy of damping contains four-fold and two-fold anisotropy terms. We infer that four-fold anisotropy originates from two-magnon scattering (TMS). By studying reference Ta/CoFeB/MgO films, deposited on LiNbO₃ substrates, we find that the two-fold anisotropy is correlated with in-plane magnetic anisotropy (IMA) of the films, suggesting its origin as the anisotropy in bulk spin-orbit coupling (SOC) of CoFeB film. We conclude that when IMA is very small, it's correlation with two-fold anisotropy cannot be experimentally identified. However, as IMA increases, it starts to show a correlation with two-fold anisotropy in damping. These results will be beneficial for designing future spintronics devices.

Heavy metal deposition temperature tuned spin pumping efficiency control in permalloy/tantalum bilayers

Spin pumping is a key property for spintronic application that can be realized in heavy metal/ferromagnet bilayers. Here we demonstrate the possibility of improving spin pumping in permalloy (Py)/tantalum (Ta) bilayers through control of Ta heavy metal deposition temperature. Through a combination of structural and ferromagnetic resonance based magnetization dynamics study, we reveal the role of Ta deposition temperature in improving spin mixing conductance which is a key parameter for spin pumping across the Py/Ta interface. The results show that by depositing Ta above room temperature, a high spin mixing conductance of 7.7 ×10¹⁸m^-2is obtained withα-Ta layer. The results present an understanding of the correlation between heavy metal deposition temperature and interface structure improvement and consequent control of spin pumping in Py/Ta bilayers.

Spin homojunction with high interfacial transparency for efficient spin-charge conversion

High interfacial transparency is vital to achieve efficient spin-charge conversion for ideal spintronic devices with low energy consumption. However, in traditional ferromagnetic/nonmagnetic heterojunctions, the interfacial Rashba spin-orbit coupling brings about spin memory loss (SML) and two-magnon scattering (TMS), quenching spin current crossing the heterointerfaces. To address the intrinsic deficiency of heterointerface, we design a ferromagnetic FeRh/antiferromagnetic FeRh spin homojunction for efficient spin-charge conversion, verified by a high interfacial transparency of 0.75 and a high spin torque efficiency of 0.34 from spin pumping measurements. First-principles calculations demonstrate that the interfacial electric field of homojunction is two orders of magnitude smaller than that of traditional heterojunction, producing negligible interfacial spin-orbit coupling to drastically reduce SML and TMS. Our spin homojunction exhibits potential and enlightenment for future energy-efficient spintronic devices.

Accelerated Ultrafast Magnetization Dynamics at Graphene/CoGd Interfaces

Atomically thin graphene layers can act as a spin-sink material when adjacent to a nanoscale magnetic surface. The enhancement in the extrinsic spin-orbit coupling (SOC) strength of graphene plays an important role in absorbing the spin angular momentum injected from the magnetic surface after perturbation with an external stimulus. As a result, the dynamics of the excited spin system is modified within the magnetic layer. In this paper, we demonstrate the modulation of ultrafast magnetization dynamics at graphene/ferrimagnet interfaces using the time-resolved magneto-optical Kerr effect (TRMOKE) technique. Magnetically modified interfaces with a systematic increase in the number of graphene layers coupled with the 10 nm-thick Co₇₄Gd₂₆ layer are studied. We find that the variation in the dynamical parameters, i.e., ultrafast demagnetization time, remagnetization times, decay time, effective damping, precessional frequency, etc., observed at different time scales is interconnected. The demagnetization time and decay time for the ferrimagnet become approximately two times faster than the corresponding intrinsic values. We found a possible correlation between the demagnetization time and damping. The effect is more pronounced for the interfaces with monolayer graphene and graphite. The spin-mixing conductance is found to be approximately 0.8 × 10¹⁵ cm^-2. The effect of SOC, pure spin current, the appearance of structural defects, and thermal properties at the graphene/ferrimagnet interface are responsible for the modifications of several dynamical parameters. This work demonstrates some important properties of the graphene/ferrimagnet interface which may unravel the possibilities of designing spintronic devices with elevated performance in the future.

Applications of nanomagnets as dynamical systems: II

In Part I of this topical review, we discussed dynamical phenomena in nanomagnets, focusing primarily on magnetization reversal with an eye to digital applications. In this part, we address mostly wave-like phenomena in nanomagnets, with emphasis on spin waves in myriad nanomagnetic systems and methods of controlling magnetization dynamics in nanomagnet arrays which may have analog applications. We conclude with a discussion of some interesting spintronic phenomena that undergird the rich physics exhibited by nanomagnet assemblies.

Femtosecond laser-induced spin dynamics in single-layer graphene/CoFeB thin films

Graphene/ferromagnet hybrid heterostructures are important building blocks of spintronics due to the unique ability of graphene to transport spin current over unprecedented distances and possible increase in its spin-orbit coupling due to proximity and hybridization. Here, we present magnetization dynamics over a femtosecond to nanosecond timescale by employing an all-optical time-resolved magneto-optical Kerr effect technique in single-layer graphene (SLG)/CoFeB thin films with varying CoFeB thickness and compared them with reference CoFeB thin films without an SLG underlayer. Gilbert damping variation with CoFeB thickness is modelled to extract spin-mixing conductance for the SLG/CoFeB interface and isolate the two-magnon scattering contribution from spin pumping. In SLG/CoFeB, we have established an inverse relationship between ultrafast demagnetization time (τ_m) and the Gilbert damping parameter (α) induced by interfacial spin accumulation and pure spin-current transport via a spin pumping mechanism. This systematic study of ultrafast demagnetization in SLG/CoFeB heterostructures and its connection with magnetic damping can help to design graphene-based ultrahigh-speed spintronic devices.

The 2021 Magnonics Roadmap

Magnonics is a budding research field in nanomagnetism and nanoscience that addresses the use of spin waves (magnons) to transmit, store, and process information. The rapid advancements of this field during last one decade in terms of upsurge in research papers, review articles, citations, proposals of devices as well as introduction of new sub-topics prompted us to present the first roadmap on magnonics. This is a collection of 22 sections written by leading experts in this field who review and discuss the current status besides presenting their vision of future perspectives. Today, the principal challenges in applied magnonics are the excitation of sub-100 nm wavelength magnons, their manipulation on the nanoscale and the creation of sub-micrometre devices using low-Gilbert damping magnetic materials and its interconnections to standard electronics. To this end, magnonics offers lower energy consumption, easier integrability and compatibility with CMOS structure, reprogrammability, shorter wavelength, smaller device features, anisotropic properties, negative group velocity, non-reciprocity and efficient tunability by various external stimuli to name a few. Hence, despite being a young research field, magnonics has come a long way since its early inception. This roadmap asserts a milestone for future emerging research directions in magnonics, and hopefully, it will inspire a series of exciting new articles on the same topic in the coming years.

Tunable Damping in Magnetic Nanowires Induced by Chiral Pumping of Spin Waves

Spin-current and spin-wave-based devices have been considered as promising candidates for next-generation information transport and processing and wave-based computing technologies with low-power consumption. Spin pumping has attracted tremendous attention and has led to interesting phenomena, including the line width broadening, which indicates damping enhancement due to energy dissipation. Recently, chiral spin pumping of spin waves has been experimentally realized and theoretically studied in magnetic nanostructures. Here, we experimentally observe by Brillouin light scattering (BLS) microscopy the line width broadening sensitive to magnetization configuration in a hybrid metal-insulator nanostructure consisting of a Co nanowire grating dipolarly coupled to a planar continuous YIG film, consistent with the results of the measured hysteresis loop. Tunable line width broadening has been confirmed independently by propagating spin-wave spectroscopy, where unidirectional spin waves are detected. Position-dependent BLS measurement unravels an oscillating-like behavior of magnon populations in Co nanowire grating, which might result from the magnon trap effect. These results are thus attractive for reconfigurable nanomagnonics devices.

Structural Phase-Dependent Giant Interfacial Spin Transparency in W/CoFeB Thin-Film Heterostructures

Pure spin current has transformed the research field of conventional spintronics due to its various advantages, including energy efficiency. An efficient mechanism for generation of pure spin current is spin pumping, and high effective spin-mixing conductance (G_eff) and interfacial spin transparency (T) are essential for its higher efficiency. By employing the time-resolved magneto-optical Kerr effect technique, we report here a giant value of T in substrate/W (t)/Co₂₀Fe₆₀B₂₀ (d)/SiO₂ (2 nm) thin-film heterostructures in the beta-tungsten (β-W) phase. We extract the spin diffusion length of W and spin-mixing conductance of the W/CoFeB interface from the variation of damping as a function of W and CoFeB thickness. This leads to a value of T = 0.81 ± 0.03 for the β-W/CoFeB interface. A stark variation of G_eff and T with the thickness of the W layer is obtained in accordance with the structural phase transition and resistivity variation of W with its thickness. Effects such as spin memory loss and two-magnon scattering are found to have minor contributions to damping modulation in comparison to the spin pumping effect which is reconfirmed from the unchanged damping constant with the variation of Cu spacer layer thickness inserted between W and CoFeB. The giant interfacial spin transparency and its strong dependence on crystal structures of W will be important for future spin-orbitronic devices based on pure spin current.

Dynamical behaviour of ultrathin [CoFeB (tCoFeB)/Pd] films with perpendicular magnetic anisotropy

CoFeB-based ultrathin films with perpendicular magnetic anisotropy are promising for different emerging technological applications such as nonvolatile memories with low power consumption and high-speed performance. In this work, the dynamical properties of [CoFeB (t_CoFeB)/Pd (10 Å)]₅ multilayered ultrathin films (1 Å ≤ t_CoFeB ≤ 5 Å) are studied by using two complementary methods: time-resolved magneto-optical Kerr effect and broadband ferromagnetic resonance. The perpendicular magnetization is confirmed for multilayers with t_CoFeB ≤ 4 Å. The effective perpendicular magnetic anisotropy reaches a clear maximum at t_CoFeB = 3 Å. Further increase of CoFeB layer thickness reduces the perpendicular magnetic anisotropy and the magnetization became in-plane oriented for t_CoFeB ≥ 5 Å. This behaviour is explained by considering competing contributions from surface and magnetoelastic anisotropies. It was also found that the effective damping parameter α_eff decreases with CoFeB layer thickness and for t_CoFeB = 4 Å reaches a value of ~ 0.019 that is suitable for microwave applications.

Giant Spin Hall Effect in Cu-Tb Alloy Thin Films

We report the giant spin current generation in CuTb alloys arising from the spin Hall effect. The maximum spin Hall angle from our CuTb-based magnetic heterostructures was found to be -0.35 ± 0.02 for Cu_0.39Tb_0.61. We find that the contribution of skew scattering is larger than the side jump for lower Tb concentrations (<14.9%), while the converse is true for higher Tb concentrations. Additionally, we also studied the Gilbert damping parameter, spin diffusion length, and spin-mixing conductance. Interfacial spin transparency was found to be 0.55 ± 0.03 for the CoFeB/Cu_0.53Tb_0.47 interface. The spin diffusion length and spin-mixing conductance of the Cu_0.53Tb_0.47 alloy are λ_sd = 2.5 ± 0.3 nm and G^↓↑ = (24.2 ± 1.0) × 10¹⁵ cm^-2, respectively. Our results pave a way for rare-earth metals to be used as a spin Hall material in highly efficient SOT devices.