1
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Chen S, Chaudhary S, Refael G, Lewandowski C. Enhancing shift current response via virtual multiband transitions. COMMUNICATIONS PHYSICS 2024; 7:250. [PMID: 39070108 PMCID: PMC11271335 DOI: 10.1038/s42005-024-01729-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/07/2024] [Accepted: 07/02/2024] [Indexed: 07/30/2024]
Abstract
Materials exhibiting a significant shift current response could potentially outperform conventional solar cell materials. The myriad of factors governing shift-current response, however, poses significant challenges in finding such strong shift-current materials. Here we propose a general design principle that exploits inter-orbital mixing to excite virtual multiband transitions in materials with multiple flat bands to achieve an enhanced shift current response. We further relate this design principle to maximizing Wannier function spread as expressed through the formalism of quantum geometry. We demonstrate the viability of our design using a 1D stacked Rice-Mele model. Furthermore, we consider a concrete material realization - alternating angle twisted multilayer graphene (TMG) - a natural platform to experimentally realize such an effect. We identify a set of twist angles at which the shift current response is maximized via virtual transitions for each multilayer graphene and highlight the importance of TMG as a promising material to achieve an enhanced shift current response at terahertz frequencies. Our proposed mechanism also applies to other 2D systems and can serve as a guiding principle for designing multiband systems that exhibit an enhanced shift current response.
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Affiliation(s)
- Sihan Chen
- Kadanoff Center for Theoretical Physics, University of Chicago, Chicago, IL 60637 USA
- Department of Physics, California Institute of Technology, Pasadena, CA 91125 USA
| | - Swati Chaudhary
- Department of Physics, The University of Texas at Austin, Austin, TX 78712 USA
- Department of Physics, Northeastern University, Boston, MA 02115 USA
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
| | - Gil Refael
- Department of Physics, California Institute of Technology, Pasadena, CA 91125 USA
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA 91125 USA
| | - Cyprian Lewandowski
- National High Magnetic Field Laboratory, Tallahassee, Florida, FL 32310 USA
- Department of Physics, Florida State University, Tallahassee, FL 32306 USA
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2
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Liao C, Wang M, Zhao YJ. Enormous and Tunable Bulk Charge/Spin Photovoltaic Effect in Piezoelectric Binary Materials T-IV-VI and T-V-V. J Phys Chem Lett 2024; 15:6099-6107. [PMID: 38820592 DOI: 10.1021/acs.jpclett.4c01257] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/02/2024]
Abstract
Understanding the nonlinear response of light and materials is crucial for fundamental physics and next-generation electronic devices. In this work, we have investigated the second-order nonlinear bulk photovoltaic (BPV) and bulk spin photovoltaic (BSPV) effects in the piezoelectric binary materials T-IV-VI and T-V-V (IV = Ge, Sn; VI = S, Se; and V = P, As, Sb, Bi). The independent nonzero conductivity tensors of charge current are derived for these binaries through the symmetry analysis, along with the mechanism for generating pure spin current. These binaries, with their unique folded structure, exhibit significant charge and spin currents under illumination. Furthermore, we find that strain engineering can effectively modulate charge/spin currents by influencing charge density distribution and built-in electric field due to the piezoelectric effect. Our research suggests that the piezoelectric binary materials possess enormous and tunable charge/spin currents, underscoring their potential for applications in nonlinear flexible optoelectronics and spintronics.
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Affiliation(s)
- Chengwei Liao
- Department of Physics, South China University of Technology, Guangzhou 510641, China
| | - Minglong Wang
- Department of Physics, South China University of Technology, Guangzhou 510641, China
| | - Yu-Jun Zhao
- Department of Physics, South China University of Technology, Guangzhou 510641, China
- Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510641, China
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3
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Lee JE, Wang A, Chen S, Kwon M, Hwang J, Cho M, Son KH, Han DS, Choi JW, Kim YD, Mo SK, Petrovic C, Hwang C, Park SY, Jang C, Ryu H. Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe 4. Nat Commun 2024; 15:3971. [PMID: 38729931 PMCID: PMC11087648 DOI: 10.1038/s41467-024-47643-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Accepted: 04/08/2024] [Indexed: 05/12/2024] Open
Abstract
The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.
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Affiliation(s)
- Ji-Eun Lee
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
- Department of Physics, Pusan National University, Busan, 46241, South Korea
- Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang, 37673, South Korea
| | - Aifeng Wang
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, 400044, China
| | - Shuzhang Chen
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York, 11794-3800, USA
| | - Minseong Kwon
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Jinwoong Hwang
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, 24341, South Korea
| | - Minhyun Cho
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Ki-Hoon Son
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Dong-Soo Han
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Jun Woo Choi
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Young Duck Kim
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Cedomir Petrovic
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York, 11794-3800, USA
- Shanghai Advanced Research in Physical Sciences, Shanghai, 201203, China
| | - Choongyu Hwang
- Department of Physics, Pusan National University, Busan, 46241, South Korea.
| | - Se Young Park
- Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul, 06978, South Korea.
- Integrative Institute of Basic Sciences, Soongsil University, Seoul, 06978, South Korea.
| | - Chaun Jang
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
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4
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He R, Xu H, Yang P, Chang K, Wang H, Zhong Z. Ferroelastic Twin-Wall-Mediated Ferroelectriclike Behavior and Bulk Photovoltaic Effect in SrTiO_{3}. PHYSICAL REVIEW LETTERS 2024; 132:176801. [PMID: 38728736 DOI: 10.1103/physrevlett.132.176801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Revised: 02/08/2024] [Accepted: 03/29/2024] [Indexed: 05/12/2024]
Abstract
Ferroelastic twin walls in nonpolar materials can give rise to a spontaneous polarization due to symmetry breaking. Nevertheless, the bistable polarity of twin walls and its reversal have not yet been demonstrated. Here, we report that the polarity of SrTiO_{3} twin walls can be switched by an ultralow strain gradient. Using first-principles-based machine-learning potential, we demonstrate that the twin walls can be deterministically rotated and realigned in specific directions under the strain gradient, which breaks the inversion symmetry of a sequence of walls and leads to a macroscopic polarization. The system can maintain polarity even after the constraint is removed. As a result, the polarization of twin walls can exhibit a ferroelectriclike hysteresis loop upon cyclic bending, namely flexoferroelectricity. Finally, we propose a scheme to experimentally detect the polarity of the twin wall by measuring the bulk photovoltaic responses. Our findings suggest a twin-wall-mediated flexoferroelectricity in SrTiO_{3}, which could be potentially exploited as functional elements in nanoelectronic devices design.
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Affiliation(s)
- Ri He
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Haowei Xu
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Peijun Yang
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Kai Chang
- Center for Quantum Matter, Zhejiang University, Hangzhou 310058, China
- School of Physics, Zhejiang University, Hangzhou 310058, China
| | - Hua Wang
- Center for Quantum Matter, Zhejiang University, Hangzhou 310058, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311215, China
- School of Physics, Zhejiang University, Hangzhou 310058, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China
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5
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Xiang L, Jin H, Wang J. Quantifying the photocurrent fluctuation in quantum materials by shot noise. Nat Commun 2024; 15:2012. [PMID: 38443381 PMCID: PMC10914713 DOI: 10.1038/s41467-024-46264-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 02/21/2024] [Indexed: 03/07/2024] Open
Abstract
The DC photocurrent can detect the topology and geometry of quantum materials without inversion symmetry. Herein, we propose that the DC shot noise (DSN), as the fluctuation of photocurrent operator, can also be a diagnostic of quantum materials. Particularly, we develop the quantum theory for DSNs in gapped systems and identify the shift and injection DSNs by dividing the second-order photocurrent operator into off-diagonal and diagonal contributions, respectively. Remarkably, we find that the DSNs can not be forbidden by inversion symmetry, while the constraint from time-reversal symmetry depends on the polarization of light. Furthermore, we show that the DSNs also encode the geometrical information of Bloch electrons, such as the Berry curvature and the quantum metric. Finally, guided by symmetry, we apply our theory to evaluate the DSNs in monolayer GeS and bilayer MoS2 with and without inversion symmetry and find that the DSNs can be larger in centrosymmetric phase.
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Affiliation(s)
- Longjun Xiang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Hao Jin
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Jian Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China.
- Department of Physics, University of Hong Kong, Hong Kong, China.
- Department of Physics, The University of Science and Technology of China, Hefei, China.
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6
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Shi C, Mao N, Zhang K, Zhang T, Chiu MH, Ashen K, Wang B, Tang X, Guo G, Lei S, Chen L, Cao Y, Qian X, Kong J, Han Y. Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics. Nat Commun 2023; 14:7168. [PMID: 37935672 PMCID: PMC10630342 DOI: 10.1038/s41467-023-42947-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/24/2023] [Accepted: 10/27/2023] [Indexed: 11/09/2023] Open
Abstract
Van der Waals (vdW) ferroelectrics have attracted significant attention for their potential in next-generation nano-electronics. Two-dimensional (2D) group-IV monochalcogenides have emerged as a promising candidate due to their strong room temperature in-plane polarization down to a monolayer limit. However, their polarization is strongly coupled with the lattice strain and stacking orders, which impact their electronic properties. Here, we utilize four-dimensional scanning transmission electron microscopy (4D-STEM) to simultaneously probe the in-plane strain and out-of-plane stacking in vdW SnSe. Specifically, we observe large lattice strain up to 4% with a gradient across ~50 nm to compensate lattice mismatch at domain walls, mitigating defects initiation. Additionally, we discover the unusual ferroelectric-to-antiferroelectric domain walls stabilized by vdW force and may lead to anisotropic nonlinear optical responses. Our findings provide a comprehensive understanding of in-plane and out-of-plane structures affecting domain properties in vdW SnSe, laying the foundation for domain wall engineering in vdW ferroelectrics.
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Affiliation(s)
- Chuqiao Shi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Nannan Mao
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kena Zhang
- Departments of Materials Science and Engineering, University of Texas at Arlington, Arlington, TX, USA
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ming-Hui Chiu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kenna Ashen
- Departments of Materials Science and Engineering, Texas A&M University, College Station, TX, USA
| | - Bo Wang
- Materials Research Institute and Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Xiuyu Tang
- Departments of Materials Science and Engineering, Texas A&M University, College Station, TX, USA
| | - Galio Guo
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Shiming Lei
- Department of Physics, Rice University, Houston, TX, 77005, USA
| | - Longqing Chen
- Materials Research Institute and Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Ye Cao
- Departments of Materials Science and Engineering, University of Texas at Arlington, Arlington, TX, USA
| | - Xiaofeng Qian
- Departments of Materials Science and Engineering, Texas A&M University, College Station, TX, USA
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA
- Department of Physics and Astronomy, Texas A&M University, College Station, TX, USA
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
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7
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Ye L, Zhou W, Huang D, Jiang X, Guo Q, Cao X, Yan S, Wang X, Jia D, Jiang D, Wang Y, Wu X, Zhang X, Li Y, Lei H, Gou H, Huang B. Manipulation of nonlinear optical responses in layered ferroelectric niobium oxide dihalides. Nat Commun 2023; 14:5911. [PMID: 37737236 PMCID: PMC10516934 DOI: 10.1038/s41467-023-41383-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2023] [Accepted: 09/04/2023] [Indexed: 09/23/2023] Open
Abstract
Realization of highly tunable second-order nonlinear optical responses, e.g., second-harmonic generation and bulk photovoltaic effect, is critical for developing modern optical and optoelectronic devices. Recently, the van der Waals niobium oxide dihalides are discovered to exhibit unusually large second-harmonic generation. However, the physical origin and possible tunability of nonlinear optical responses in these materials remain to be unclear. In this article, we reveal that the large second-harmonic generation in NbOX2 (X = Cl, Br, and I) may be partially contributed by the large band nesting effect in different Brillouin zone. Interestingly, the NbOCl2 can exhibit dramatically different strain-dependent bulk photovoltaic effect under different polarized light, originating from the light-polarization-dependent orbital transitions. Importantly, we achieve a reversible ferroelectric-to-antiferroelectric phase transition in NbOCl2 and a reversible ferroelectric-to-paraelectric phase transition in NbOI2 under a certain region of external pressure, accompanied by the greatly tunable nonlinear optical responses but with different microscopic mechanisms. Our study establishes the interesting external-field tunability of NbOX2 for nonlinear optical device applications.
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Affiliation(s)
- Liangting Ye
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Wenju Zhou
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China
| | - Dajian Huang
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China
| | - Xiao Jiang
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Qiangbing Guo
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Xinyu Cao
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Shaohua Yan
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing, 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Xinyu Wang
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China
| | - Donghan Jia
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China
| | - Dequan Jiang
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China
| | - Yonggang Wang
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China
| | - Xiaoqiang Wu
- School of Mechanical Engineering, Chengdu University, Chengdu, 610106, China
| | - Xiao Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Yang Li
- Beijing Computational Science Research Center, Beijing, 100193, China.
| | - Hechang Lei
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing, 100872, China
| | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China.
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing, 100193, China.
- Department of Physics, Beijing Normal University, Beijing, 100875, China.
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8
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Shi J, Xu H, Heide C, HuangFu C, Xia C, de Quesada F, Shen H, Zhang T, Yu L, Johnson A, Liu F, Shi E, Jiao L, Heinz T, Ghimire S, Li J, Kong J, Guo Y, Lindenberg AM. Giant room-temperature nonlinearities in a monolayer Janus topological semiconductor. Nat Commun 2023; 14:4953. [PMID: 37587120 PMCID: PMC10432555 DOI: 10.1038/s41467-023-40373-z] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/19/2023] [Accepted: 07/24/2023] [Indexed: 08/18/2023] Open
Abstract
Nonlinear optical materials possess wide applications, ranging from terahertz and mid-infrared detection to energy harvesting. Recently, the correlations between nonlinear optical responses and certain topological properties, such as the Berry curvature and the quantum metric tensor, have attracted considerable interest. Here, we report giant room-temperature nonlinearities in non-centrosymmetric two-dimensional topological materials-the Janus transition metal dichalcogenides in the 1 T' phase, synthesized by an advanced atomic-layer substitution method. High harmonic generation, terahertz emission spectroscopy, and second harmonic generation measurements consistently show orders-of-the-magnitude enhancement in terahertz-frequency nonlinearities in 1 T' MoSSe (e.g., > 50 times higher than 2H MoS2 for 18th order harmonic generation; > 20 times higher than 2H MoS2 for terahertz emission). We link this giant nonlinear optical response to topological band mixing and strong inversion symmetry breaking due to the Janus structure. Our work defines general protocols for designing materials with large nonlinearities and heralds the applications of topological materials in optoelectronics down to the monolayer limit.
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Affiliation(s)
- Jiaojian Shi
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Haowei Xu
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Christian Heide
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Changan HuangFu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, 100084, Beijing, China
| | - Chenyi Xia
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Felipe de Quesada
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Hongzhi Shen
- School of Engineering, Westlake University, 310024, Hangzhou, China
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Leo Yu
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA, 94305, USA
| | - Amalya Johnson
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Fang Liu
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Chemistry, Stanford University, Stanford, CA, 94305, USA
| | - Enzheng Shi
- School of Engineering, Westlake University, 310024, Hangzhou, China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, 100084, Beijing, China
| | - Tony Heinz
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- E. L. Ginzton Laboratory, Stanford University, Stanford, CA, 94305, USA
| | - Shambhu Ghimire
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Ju Li
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Yunfan Guo
- Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, 310058, Hangzhou, China.
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA.
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.
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9
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Jiang X, Kang L, Wang J, Huang B. Giant Bulk Electrophotovoltaic Effect in Heteronodal-Line Systems. PHYSICAL REVIEW LETTERS 2023; 130:256902. [PMID: 37418709 DOI: 10.1103/physrevlett.130.256902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Revised: 04/27/2023] [Accepted: 05/30/2023] [Indexed: 07/09/2023]
Abstract
The realization of a giant and continuously tunable second-order photocurrent is desired for many nonlinear optical (NLO) and optoelectronic applications, which remains a great challenge. Here, based on a two-band model, we propose a concept of the bulk electrophotovoltaic effect, that is, an out-of-plane external electric field (E_{ext}) that can continuously tune in-plane shift current along with its sign flip in a heteronodal-line (HNL) system. While strong linear optical transition around the nodal loop may potentially generate giant shift current, an E_{ext} can effectively control the radius of the nodal loop, which can continuously modulate the shift-vector components inside and outside the nodal loop holding opposite signs. This concept has been demonstrated in the HNL HSnN/MoS_{2} system using first-principles calculations. The HSnN/MoS_{2} heterobilayer can not only produce a shift-current conductivity with magnitude that is one to two orders larger than other reported systems, but it can also realize a giant bulk electrophotovoltaic effect. Our finding opens new routes to create and manipulate NLO responses in 2D materials.
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Affiliation(s)
- Xiao Jiang
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Lei Kang
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Jianfeng Wang
- School of Physics, Beihang University, Beijing 100191, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing 100193, China
- Beijing Normal University, Beijing 100875, China
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10
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Im J, Kim CH, Jin H. Ferroelectricity-Driven Phonon Berry Curvature and Nonlinear Phonon Hall Transports. NANO LETTERS 2022; 22:8281-8286. [PMID: 36194514 DOI: 10.1021/acs.nanolett.2c03095] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Berry curvature (BC) governs topological phases of matter and generates anomalous transport. When a magnetic field is applied, phonons can acquire BC indirectly through spin-lattice coupling, leading to a linear phonon Hall effect. Here, we show that polar lattice distortion directly couples to a phonon BC dipole, which causes a switchable nonlinear phonon Hall effect. In a SnS monolayer, the in-plane ferroelectricity induces a phonon BC and leads to the phononic version of the nonvolatile BC memory effect. As a new type of ferroelectricity-phonon coupling, the phonon Rashba effect emerges and opens a mass gap in tilted Weyl phonon modes, resulting in a large phonon BC dipole. Furthermore, our ab initio non-equilibrium molecular dynamics simulations reveal that nonlinear phonon Hall transport occurs in a controllable manner via ferroelectric switching. The ferroelectricity-driven phonon BC and corresponding nonlinear phonon transports provide a novel scheme for constructing topological phononic transport/memory devices.
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Affiliation(s)
- Jino Im
- Chemical Data-driven Research Center, Korea Research Institute of Chemical Technology, Daejeon34114, Korea
| | - Choong H Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul08826, Korea
| | - Hosub Jin
- Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan44919, Korea
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11
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Strasser A, Wang H, Qian X. Nonlinear Optical and Photocurrent Responses in Janus MoSSe Monolayer and MoS 2-MoSSe van der Waals Heterostructure. NANO LETTERS 2022; 22:4145-4152. [PMID: 35532538 DOI: 10.1021/acs.nanolett.2c00898] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides are promising materials platforms for a variety of optoelectronic device applications. Janus 2D materials are a rising class of 2D materials with low symmetry, which leads to the emergence of out-of-plane electric polarization and piezoelectricity. Using first-principles density functional theory, we show that monolayer and bilayer heterostructure Janus MoSSe moieties exhibit strong nonlinear optical responses that are vanishing in the non-Janus form. The absence of horizontal mirror plane symmetry enables a circular photocurrent as well as a large out-of-plane second harmonic generation (SHG) and shift photocurrent. Through a comparative study of the Janus heterostructure MoS2-MoSSe on five distinct stacking configurations, we find that the magnitude of the out-of-plane SHG in the Janus heterostructure is enhanced due to the interlayer coupling and interference effect compared to that of monolayer MoSSe. Thus, Janus 2D materials offer a unique opportunity for exploring nonlinear optical phenomena and designing configurable layered nonlinear optical materials.
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Affiliation(s)
- Alex Strasser
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Hua Wang
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Xiaofeng Qian
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, United States
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12
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Jeong J, Kim HS, Kwon G, Jeong K, Lee H, Lee JH, Park M, Lee C, Yu S, Kim H, Im S, Yoo K, Lee E, Cho MH. Ferroelastic-Ferroelectric Multiferroicity in van der Waals Rhenium Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108777. [PMID: 35293650 DOI: 10.1002/adma.202108777] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2021] [Revised: 03/11/2022] [Indexed: 06/14/2023]
Abstract
2D multiferroics with combined ferroic orders have gained attention owing to their novel functionality and underlying science. Intrinsic ferroelastic-ferroelectric multiferroicity in single-crystalline van der Waals rhenium dichalcogenides, whose symmetries are broken by the Peierls distortion and layer-stacking order, is demonstrated. Ferroelastic switching of the domain orientation and accompanying anisotropic properties is achieved with 1% uniaxial strain using the polymer encapsulation method. Based on the electron localization function and bond dissociation energy of the Re-Re bonds, the change in bond configuration during the evolution of the domain wall and the preferred switching between the two specific orientation states are explained. Furthermore, the ferroelastic switching of ferroelectric polarization is confirmed using the photovoltaic effect. The study provides insights into the reversible bond-switching process and potential applications based on 2D multiferroicity.
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Affiliation(s)
- Jaehun Jeong
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Hyeon-Sik Kim
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Gihyeon Kwon
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Kwangsik Jeong
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Hyangsook Lee
- Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Ji Hye Lee
- Center for Correlated Electron Systems (CCES), Institute of Basic Science (IBS), Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Myunguk Park
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Changjun Lee
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Sanghyuck Yu
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Heegoo Kim
- Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Seongil Im
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Kyunghwa Yoo
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Eunha Lee
- Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Mann-Ho Cho
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
- Department of System Semiconductor Engineering, Yonsei University, Seoul, 03722, Republic of Korea
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13
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Kaner NT, Wei Y, Ying T, Xu X, Li W, Raza A, Li X, Yang J, Jiang Y, Tian WQ. Giant Shift Photovoltaic Current in Group V‐V Binary Nanosheets. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202100472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
| | - Yadong Wei
- School of Physics Harbin Institute of Technology Harbin 150001 China
| | - Tao Ying
- School of Physics Harbin Institute of Technology Harbin 150001 China
| | - Xiaodong Xu
- School of Physics Harbin Institute of Technology Harbin 150001 China
| | - Weiqi Li
- School of Physics Harbin Institute of Technology Harbin 150001 China
- State Key Laboratory of Intense Pulsed Radiation Simulation and Effect Xi'an 710024 China
| | - Ali Raza
- Department of Physics University of Sialkot (USKT) 1‐Km Main Daska Road Sialkot Punjab 51040 Pakistan
| | - Xingji Li
- School of Material Science and Engineering Harbin Institute of Technology Harbin 150001 China
| | - Jianqun Yang
- School of Material Science and Engineering Harbin Institute of Technology Harbin 150001 China
| | - YongYuan Jiang
- School of Physics Harbin Institute of Technology Harbin 150001 China
- Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 China
- Key Lab of Micro‐Optics and Photonic Technology of Heilongjiang Province Harbin 150001 China
| | - Wei Quan Tian
- Chongqing Key Laboratory of Theoretical and Computational Chemistry School of Chemistry and Chemical Engineering Chongqing University Chongqing 401331 China
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14
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Yang Y, Zong H, Sun J, Ding X. Rippling Ferroic Phase Transition and Domain Switching In 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2103469. [PMID: 34632645 DOI: 10.1002/adma.202103469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2021] [Revised: 09/02/2021] [Indexed: 06/13/2023]
Abstract
Ripples are a class of native structural defects widely existing in 2D materials. They originate from the out-of-plane flexibility of 2D materials introducing spatially evolving electronic structure and friction behavior. However, the effect of ripples on 2D ferroics has not been reported. Here a molecular dynamics study of the effect of ripples on the temperature-induced ferroic phase transition and stress-induced ferroic domain switching in ferroelastic-ferroelectric monolayer GeSe is presented. Ripples stabilize the short-range ferroic orders in the high-temperature phase with stronger ferroicity and longer lifetime, thereby increasing the transition temperature upon cooling. In addition, ripples significantly affect the domain switching upon loading, changing it from a highly correlated process into a ripple-driven localized one where ripples act as source of dynamical random stress. These results reveal the fundamental role of ripples on 2D ferroicity and provide theoretical guidance for ripple engineering of controlled phase transition and domain switching with potential applications in flexible 2D electronics.
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Affiliation(s)
- Yang Yang
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Hongxiang Zong
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jun Sun
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Xiangdong Ding
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
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15
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Yan Y, Deng Q, Li S, Guo T, Li X, Jiang Y, Song X, Huang W, Yang J, Xia C. In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes. NANOSCALE 2021; 13:16122-16130. [PMID: 34533169 DOI: 10.1039/d1nr03807a] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional ferroelectric semiconductors (2DFeSs) have been attracting extensive research attention on account of their unique properties and versatile applications in random-access memory, digital signal processors, and neuromorphic computing. Germanium sulfide (GeS) is predicted as a typical 2DFeS with a large spontaneous polarization of 484 pC m-1. Furthermore, the moderate band gap equivalent to 1.63 eV of GeS provides it with significant potential to create a strong bulk photovoltage in the visible light range. However, the fabrication of chemically stable few-to-monolayer GeS has not been reported so far, owing to the strong interlayer force and high chemical reactivity of the surface. Herein we demonstrate a new method for fabricating high quality, air-stable, ultrathin GeS nanoflakes. The electrical characterization confirms the formation of few-layered GeS with a remarkable in-plane ferroelectric hysteresis, which is forbidden by the inversion symmetry in bulk GeS crystals. After applying a coercive field of about 18.1 kV cm-1, a switchable shift current can also be observed in the polarized GeS nanoflakes under light irradiation. To further enhance the photoresponsivity, few-layered InSe was transferred onto the GeS nanoflakes to form van der Waals ferroelectric diodes. The interfacial perturbation breaking the inversion symmetry results in the enhancement of robust dipoles in the GeS side along the interface, which can be tuned by the in-plane electric field. Overall, this work opens the door for exploring the low-dimensional ferroelectric memory and energy conversion applications based on 2D GeS nanoflakes and provides a deeper understanding of the photovoltaic mechanism with in-plane 2D ferroelectric diodes.
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Affiliation(s)
- Yong Yan
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Qunrui Deng
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Shasha Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Tao Guo
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3Ga, Canada
| | - Xueping Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Yurong Jiang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Xiaohui Song
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Wen Huang
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 2a0023, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Congxin Xia
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
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16
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Shi LK, Zhang D, Chang K, Song JCW. Geometric Photon-Drag Effect and Nonlinear Shift Current in Centrosymmetric Crystals. PHYSICAL REVIEW LETTERS 2021; 126:197402. [PMID: 34047609 DOI: 10.1103/physrevlett.126.197402] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2020] [Accepted: 03/22/2021] [Indexed: 06/12/2023]
Abstract
The nonlinear shift current, also known as the bulk photovoltaic current generated by linearly polarized light, has long been known to be absent in crystals with inversion symmetry. Here we argue that a nonzero shift current in centrosymmetric crystals can be activated by a photon-drag effect. Photon-drag shift current proceeds from a "shift current dipole" (a geometric quantity characterizing interband transitions) and manifests a purely transverse response in centrosymmetric crystals. This transverse nature proceeds directly from the shift-vector's pseudovector nature under mirror operation and underscores its intrinsic geometric origin. Photon-drag shift current can be greatly enhanced by coupling to polaritons and provides a new and sensitive tool to interrogate the subtle interband coherences of materials with inversion symmetry previously thought to be inaccessible via photocurrent probes.
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Affiliation(s)
- Li-Kun Shi
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371, Republic of Singapore
- Max Planck Institute for the Physics of Complex Systems, 01187 Dresden, Germany
| | - Dong Zhang
- SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Kai Chang
- SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Justin C W Song
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371, Republic of Singapore
- Institute of High Performance Computing, Agency for Science, Technology, & Research, Singapore 138632, Republic of Singapore
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17
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Taghizadeh A, Thygesen KS, Pedersen TG. Two-Dimensional Materials with Giant Optical Nonlinearities near the Theoretical Upper Limit. ACS NANO 2021; 15:7155-7167. [PMID: 33724766 DOI: 10.1021/acsnano.1c00344] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Nonlinear optical (NLO) phenomena such as harmonic generation and Kerr and Pockels effects are of great technological importance for lasers, frequency converters, modulators, switches, etc. Recently, two-dimensional (2D) materials have drawn significant attention due to their strong and peculiar NLO properties. Here, we describe an efficient first-principles workflow for calculating the quadratic optical response and apply it to 375 non-centrosymmetric semiconductor monolayers from the Computational 2D Materials Database (C2DB). Sorting the nonresonant nonlinearities with respect to bandgap Eg reveals an upper limit proportional to Eg-4, which is neatly explained by two distinct generic models. We identify multiple promising candidates with giant nonlinearities and bandgaps ranging from 0.4 to 5 eV, some of which approach the theoretical upper limit and greatly outperform known materials. Our comprehensive library of ab initio NLO spectra for all 375 monolayers is freely available via the C2DB Web site.
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Affiliation(s)
- Alireza Taghizadeh
- Department of Materials and Production, Aalborg University, 9220 Aalborg Øst, Denmark
- Center for Nanostructured Graphene (CNG), 9220 Aalborg Øst, Denmark
- Computational Atomic-scale Materials Design (CAMD), Department of Physics, Technical University of Denmark (DTU), 2800 Kgs. Lyngby, Denmark
| | - Kristian S Thygesen
- Computational Atomic-scale Materials Design (CAMD), Department of Physics, Technical University of Denmark (DTU), 2800 Kgs. Lyngby, Denmark
- Center for Nanostructured Graphene (CNG), Technical University of Denmark (DTU), 2800 Kgs. Lyngby, Denmark
| | - Thomas G Pedersen
- Department of Materials and Production, Aalborg University, 9220 Aalborg Øst, Denmark
- Center for Nanostructured Graphene (CNG), 9220 Aalborg Øst, Denmark
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18
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Ma XY, Lyu HY, Hao KR, Zhao YM, Qian X, Yan QB, Su G. Large family of two-dimensional ferroelectric metals discovered via machine learning. Sci Bull (Beijing) 2021; 66:233-242. [PMID: 36654328 DOI: 10.1016/j.scib.2020.09.010] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2020] [Revised: 08/03/2020] [Accepted: 09/01/2020] [Indexed: 01/20/2023]
Abstract
Ferroelectricity and metallicity are usually believed not to coexist because conducting electrons would screen out static internal electric fields. In 1965, Anderson and Blount proposed the concept of "ferroelectric metal", however, it is only until recently that very rare ferroelectric metals were reported. Here, by combining high-throughput ab initio calculations and data-driven machine learning method with new electronic orbital based descriptors, we systematically investigated a large family (2964) of two-dimensional (2D) bimetal phosphates, and discovered 60 stable ferroelectrics with out-of-plane polarization, including 16 ferroelectric metals and 44 ferroelectric semiconductors that contain seven multiferroics. The ferroelectricity origins from spontaneous symmetry breaking induced by the opposite displacements of bimetal atoms, and the full-d-orbital coinage metal elements cause larger displacements and polarization than other elements. For 2D ferroelectric metals, the odd electrons per unit cell without spin polarization may lead to a half-filled energy band around Fermi level and is responsible for the metallicity. It is revealed that the conducting electrons mainly move on a single-side surface of the 2D layer, while both the ionic and electric contributions to polarization come from the other side and are vertical to the above layer, thereby causing the coexistence of metallicity and ferroelectricity. Van der Waals heterostructures based on ferroelectric metals may enable the change of Schottky barrier height or the Schottky-Ohmic contact type and induce a dramatic change of their vertical transport properties. Our work greatly expands the family of 2D ferroelectric metals and will spur further exploration of 2D ferroelectric metals.
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Affiliation(s)
- Xing-Yu Ma
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hou-Yi Lyu
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China; Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kuan-Rong Hao
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yi-Ming Zhao
- Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaofeng Qian
- Department of Materials Science and Engineering, College of Engineering and College of Science, Texas A&M University, College Station, TX 77843, USA
| | - Qing-Bo Yan
- Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
| | - Gang Su
- Kavli Institute for Theoretical Sciences, and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.
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19
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Chang K, Küster F, Miller BJ, Ji JR, Zhang JL, Sessi P, Barraza-Lopez S, Parkin SSP. Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature. NANO LETTERS 2020; 20:6590-6597. [PMID: 32809837 PMCID: PMC7498149 DOI: 10.1021/acs.nanolett.0c02357] [Citation(s) in RCA: 57] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical and coplanar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which are difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications.
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Affiliation(s)
- Kai Chang
- Max Planck Institute
of Microstructure Physics, Weinberg 2, Halle 06120, Germany
- (K.C.)
| | - Felix Küster
- Max Planck Institute
of Microstructure Physics, Weinberg 2, Halle 06120, Germany
| | - Brandon J. Miller
- Department
of Physics, University of Arkansas, Fayetteville, Arkansas 72701, United States
| | - Jing-Rong Ji
- Max Planck Institute
of Microstructure Physics, Weinberg 2, Halle 06120, Germany
| | - Jia-Lu Zhang
- Max Planck Institute
of Microstructure Physics, Weinberg 2, Halle 06120, Germany
| | - Paolo Sessi
- Max Planck Institute
of Microstructure Physics, Weinberg 2, Halle 06120, Germany
| | - Salvador Barraza-Lopez
- Department
of Physics, University of Arkansas, Fayetteville, Arkansas 72701, United States
| | - Stuart S. P. Parkin
- Max Planck Institute
of Microstructure Physics, Weinberg 2, Halle 06120, Germany
- (S.S.P.P.)
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20
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Kaner N, Wei Y, Jiang Y, Li W, Xu X, Pang K, Li X, Yang J, Jiang Y, Zhang G, Tian WQ. Enhanced Shift Currents in Monolayer 2D GeS and SnS by Strain-Induced Band Gap Engineering. ACS OMEGA 2020; 5:17207-17214. [PMID: 32715206 PMCID: PMC7376894 DOI: 10.1021/acsomega.0c01319] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2020] [Accepted: 06/22/2020] [Indexed: 06/11/2023]
Abstract
Group IV monochalcogenides exhibit spontaneous polarization and ferroelectricity, which are important in photovoltaic materials. Since strain engineering plays an important role in ferroelectricity, in the present work, the effect of equibiaxial strain on the band structure and shift currents in monolayer two-dimensional (2D) GeS and SnS has systematically been investigated using the first-principles calculations. The conduction bands of those materials are more responsive to strain than the valence bands. Increased equibiaxial compressive strain leads to a drastic reduction in the band gap and finally the occurrence of phase transition from semiconductor to metal at strains of -15 and -14% for GeS and SnS, respectively. On the other hand, tensile equibiaxial strain increases the band gap slightly. Similarly, increased equibiaxial compressive strain leads to a steady almost four times increase in the shift currents at a strain of -12% with direction change occurring at -8% strain. However, at phase transition from semiconductor to metal, the shift currents of the two materials completely vanish. Equibiaxial tensile strain also leads to increased shift currents. For SnS, shift currents do not change direction, just as the case of GeS at low strain; however, at a strain of +8% and beyond, direction reversal of shift currents beyond the band gap in GeS occur.
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Affiliation(s)
| | - Yadong Wei
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Yingjie Jiang
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Weiqi Li
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Xiaodong Xu
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Kaijuan Pang
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Xingji Li
- Materials
Science and Engineering, Harbin Institute
of Technology, Harbin 150001, China
| | - Jianqun Yang
- Materials
Science and Engineering, Harbin Institute
of Technology, Harbin 150001, China
| | - YongYuan Jiang
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Guiling Zhang
- School
of Materials Science and Engineering, Harbin
University of Science and Technology, Harbin 150080, China
| | - Wei Quan Tian
- Chongqing
Key Laboratory of Theoretical and Computational Chemistry, College
of Chemistry and Chemical Engineering, Chongqing
University, Huxi Campus, Chongqing 401331, China
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21
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Wang X, Tan J, Han C, Wang JJ, Lu L, Du H, Jia CL, Deringer VL, Zhou J, Zhang W. Sub-Angstrom Characterization of the Structural Origin for High In-Plane Anisotropy in 2D GeS 2. ACS NANO 2020; 14:4456-4462. [PMID: 32275386 DOI: 10.1021/acsnano.9b10057] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Materials with layered crystal structures and high in-plane anisotropy, such as black phosphorus, present unique properties and thus promise for applications in electronic and photonic devices. Recently, the layered structures of GeS2 and GeSe2 were utilized for high-performance polarization-sensitive photodetection in the short wavelength region due to their high in-plane optical anisotropy and wide band gap. The highly complex, low-symmetric (monoclinic) crystal structures are at the origin of the high in-plane optical anisotropy, but the structural nature of the corresponding nanostructures remains to be fully understood. Here, we present an atomic-scale characterization of monoclinic GeS2 nanostructures and quantify the in-plane structural anisotropy at the sub-angstrom level in real space by Cs-corrected scanning transmission electron microscopy. We elucidate the origin of this high in-plane anisotropy in terms of ordered and disordered arrangement of [GeS4] tetrahedra in GeS2 monolayers, through density functional theory (DFT) calculations and orbital-based bonding analyses. We also demonstrate high in-plane mechanical, electronic, and optical anisotropies in monolayer GeS2 and envision phase transitions under uniaxial strain that could potentially be exploited for nonvolatile memory applications.
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Affiliation(s)
- Xudong Wang
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jieling Tan
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Chengqian Han
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jiang-Jing Wang
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Lu Lu
- The School of Microelectronics, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hongchu Du
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Chun-Lin Jia
- The School of Microelectronics, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Volker L Deringer
- Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, Oxford OX1 3QR, U.K
| | - Jian Zhou
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Wei Zhang
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
- Xi'an Jiaotong University Suzhou Institute, Suzhou 215123, China
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