Nonvolatile programmable silicon photonics using an ultralow-loss Sb2Se3 phase change material

Optical neural networks: progress and challenges

Artificial intelligence has prevailed in all trades and professions due to the assistance of big data resources, advanced algorithms, and high-performance electronic hardware. However, conventional computing hardware is inefficient at implementing complex tasks, in large part because the memory and processor in its computing architecture are separated, performing insufficiently in computing speed and energy consumption. In recent years, optical neural networks (ONNs) have made a range of research progress in optical computing due to advantages such as sub-nanosecond latency, low heat dissipation, and high parallelism. ONNs are in prospect to provide support regarding computing speed and energy consumption for the further development of artificial intelligence with a novel computing paradigm. Herein, we first introduce the design method and principle of ONNs based on various optical elements. Then, we successively review the non-integrated ONNs consisting of volume optical components and the integrated ONNs composed of on-chip components. Finally, we summarize and discuss the computational density, nonlinearity, scalability, and practical applications of ONNs, and comment on the challenges and perspectives of the ONNs in the future development trends.

Thin film ferroelectric photonic-electronic memory

To reduce system complexity and bridge the interface between electronic and photonic circuits, there is a high demand for a non-volatile memory that can be accessed both electrically and optically. However, practical solutions are still lacking when considering the potential for large-scale complementary metal-oxide semiconductor compatible integration. Here, we present an experimental demonstration of a non-volatile photonic-electronic memory based on a 3-dimensional monolithic integrated ferroelectric-silicon ring resonator. We successfully demonstrate programming and erasing the memory using both electrical and optical methods, assisted by optical-to-electrical-to-optical conversion. The memory cell exhibits a high optical extinction ratio of 6.6 dB at a low working voltage of 5 V and an endurance of 4 × 104 cycles. Furthermore, the multi-level storage capability is analyzed in detail, revealing stable performance with a raw bit-error-rate smaller than 5.9 × 10-2. This ground-breaking work could be a key technology enabler for future hybrid electronic-photonic systems, targeting a wide range of applications such as photonic interconnect, high-speed data communication, and neuromorphic computing.

Reversible Laser Imprinting of Phase Change Photonic Structures in Integrated Waveguides

Formation of laser-induced periodic surface structures (LIPSS) is known as a fast and robust method of functionalization of material surfaces. Of particular interest are LIPSS that manifest as periodic modulation of phase state of the material, as it implies reversibility of phase modification that constitute rewritable LIPSS, and recently was demonstrated for chalcogenide phase change materials (PCMs). Due to remarkable properties of chalcogenide PCMs─nonvolatality, prominent optical contrast and ns switching speed─such novel phase change LIPSS hold potential for exciting applications in all-optical tunable photonics. In this work we explore phase change LIPSS formation in thin films of Ge2Sb2Te5 (GST) integrated with planar and rib waveguides. We demonstrate that by fine-tuning laser radiation, the morphology of phase change LIPSS can be controlled, including their period and fill factor, and investigate the limitations of multicycle rewriting of the structures. We also demonstrate the formation of phase change LIPSS on a 1D waveguide, which has potential for use as tunable Bragg filters or structures for on-demand light decoupling into the far-field. The presented concept of applying phase change LIPSS offers a promising approach to enable fast and simple tuning in integrated photonic devices.

Rewritable Photonic Integrated Circuit Canvas Based on Low-Loss Phase Change Material and Nanosecond Pulsed Lasers

Programmable photonic integrated circuits (PICs) are an increasingly important platform in optical science and engineering. However, current programmable PICs are mostly formed through subtractive fabrication techniques, which limits the reconfigurability of the device and makes prototyping costly and time-consuming. A rewritable PIC architecture can circumvent these drawbacks, where PICs are repeatedly written and erased on a single PIC canvas. We demonstrate such a rewritable PIC platform by selective laser writing a layer of wide-band-gap phase change material (PCM) Sb2S3 with a low-cost benchtop setup. We show arbitrary patterning with resolution up to 300 nm and write dielectric assisted waveguides with a low optical loss of 0.0172 dB/μm. We envision that using this inexpensive benchtop platform thousands of PIC designs can be written, tested, and erased on the same chip without the need for lithography/etching tools or a nanofabrication facility, thus reducing manufacturing cost and increasing accessibility.

Real-time channel selection in multi-mode multiplexing optical interconnection implemented by hybrid algorithm and material system

Multi-mode multiplexing optical interconnection (MMOI) has been widely used as a new technology that can significantly expand communication bandwidth. However, the constant-on state of each channel in the existing MMOI systems leads to serious interference for receivers when extracting and processing information, necessitating introducing real-time selective-on function for each channel in MMOI systems. To achieve this goal, combining several practical requirements, we propose a real-time selective mode switch based on phase-change materials, which can individually tune the passing/blocking of different modes in the bus waveguide. We utilize our proposed particle swarm optimization algorithm with embedded neural network surrogate models (NN-in-PSO) to design this mode switch. The proposed NN-in-PSO significantly reduces the optimization cost, enabling multi-dimensional simultaneous optimization. The resulting mode switch offers several advantages, including ultra-compactness, rapid tuning, nonvolatility, and large extinction ratio. Then, we demonstrate the real-time channel selection function by integrating the mode switch into the MMOI system. Finally, we prove the fabricating robustness of the proposed mode switch, which paves the way for its large-scale application.

Beyond the lab: a nanoimprint metalens array-based augmented reality

A see-through augmented reality prototype has been developed based on an ultrathin nanoimprint metalens array, opening up a full-colour, video-rate, and low-cost 3D near-eye display.

Large-scale photonic chiplet Taichi empowers 160-TOPS/W artificial general intelligence

The pursuit of artificial general intelligence (AGI) continuously demands higher computing performance. Despite the superior processing speed and efficiency of integrated photonic circuits, their capacity and scalability are restricted by unavoidable errors, such that only simple tasks and shallow models are realized. To support modern AGIs, we designed Taichi-large-scale photonic chiplets based on an integrated diffractive-interference hybrid design and a general distributed computing architecture that has millions-of-neurons capability with 160-tera-operations per second per watt (TOPS/W) energy efficiency. Taichi experimentally achieved on-chip 1000-category-level classification (testing at 91.89% accuracy in the 1623-category Omniglot dataset) and high-fidelity artificial intelligence-generated content with up to two orders of magnitude of improvement in efficiency. Taichi paves the way for large-scale photonic computing and advanced tasks, further exploiting the flexibility and potential of photonics for modern AGI.

Experimentally realized physical-model-based frugal wave control in metasurface-programmable complex media

Metasurface-programmable radio environments are considered a key ingredient of next-generation wireless networks. Yet, identifying a metasurface configuration that yields a desired wireless functionality in an unknown complex environment was so far only achieved with closed-loop iterative feedback schemes. Here, we introduce open-loop wave control in metasurface-programmable complex media by estimating the parameters of a compact physics-based forward model. Our experiments demonstrate orders-of-magnitude advantages over deep-learning-based digital-twin benchmarks in terms of accuracy, compactness and required calibration examples. Strikingly, our parameter estimation also works without phase information and without providing measurements for all considered scattering coefficients. These unique generalization capabilities of our pure-physics model unlock unforeseen and previously inaccessible frugal wave control protocols that significantly alleviate the measurement complexity. For instance, we achieve coherent wave control (focusing or perfect absorption) and phase-shift-keying backscatter communications in metasurface-programmable complex media with intensity-only measurements. Our approach is also directly relevant to dynamic metasurface antennas, microwave-based signal processors and emerging in situ reconfigurable nanophotonic, optical and room-acoustical systems.

Multi-channel broadband nonvolatile programmable modal switch

Mode-division multiplexing (MDM) in chip-scale photonics is paramount to sustain data capacity growth and reduce power consumption. However, its scalability hinges on developing efficient and dynamic modal switches. Existing active modal switches suffer from substantial static power consumption, large footprints, and narrow bandwidth. Here, we present, for the first time, to the best of our knowledge, a novel multiport, broadband, non-volatile, and programmable modal switch designed for on-chip MDM systems. Our design leverages the unique properties of integrating nanoscale phase-change materials (PCM) within a silicon photonic architecture. This enables independent manipulation of spatial modes, allowing for dynamic, non-volatile, and selective routing to six distinct output ports. Crucially, our switch outperforms current dynamic modal switches by offering non-volatile, energy-efficient multiport functionality and excels in performance metrics. Our switch exhibits exceptional broadband operating bandwidth exceeding 70 nm, with low loss (< 1 dB), and a high extinction ratio (> 10 dB). Our framework provides a step forward in chip-scale MDM, paving the way for future green and scalable data centers and high-performance computers.

Multispectral camouflage and radiative cooling using dynamically tunable metasurface

With the increasing demand for privacy, multispectral camouflage devices that utilize metasurface designs in combination with mature detection technologies have become effective. However, these early designs face challenges in realizing multispectral camouflage with a single metasurface and restricted modes. Therefore, this paper proposes a dynamically tunable metasurface. The metasurface consists of gold (Au), antimony selenide (Sb2Se3), and aluminum (Al), which enables radiative cooling, light detection and ranging (LiDAR) and infrared camouflage. In the amorphous phase of Sb2Se3, the thermal radiation reduction rate in the mid wave infrared range (MWIR) is up to 98.2%. The echo signal reduction rate for the 1064 nm LiDAR can reach 96.3%. In the crystalline phase of Sb2Se3, the highest cooling power is 65.5 Wm-2. Hence the metasurface can reduce the surface temperature and achieve efficient infrared camouflage. This metasurface design provides a new strategy for making devices compatible with multispectral camouflage and radiative cooling.

Reconfigurable optical logic in silicon platform

In this paper, we present a novel, scalable, and reconfigurable optical switch that performs multiple computational logic functions simultaneously. The free-carrier depletion effect is used to perform non-volatile switching operations due to its high speed and low power consumption. We adopt the concept of optical memory using a phase-change material to realize the non-volatile reconfigurability without a constant power supply, in addition to providing a large operating bandwidth required for reconfigurability. The proposed reconfigurable optical logic architecture is realized in a compact microdisk resonator configuration, utilizing both the carrier-depletion-based modulation and phase-change optical memory. This is the first time these two modulation schemes are implemented in the same optical microdisk for the purpose of reconfigurable optical logic.

Optimized wideband and compact multifunctional photonic device based on Sb2S3 phase change material

In this paper, a 1 × 2 photonic switch is designed based on a silicon-on-insulator (SOI) platform combined with the phase change material (PCM), Sb2S3, assisted by the direct binary search (DBS) algorithm. The designed photonic switch exhibits an impressive operating bandwidth ranging from 1450 to 1650 nm. The device has an insertion loss (IL) from 0.44 dB to 0.70 dB (of less than 0.7 dB) and cross talk (CT) from -26 dB to -20 dB (of less than -20 dB) over an operating bandwidth of 200 nm, especially an IL of 0.52 dB and CT of -24 dB at 1550 nm. Notably, the device is highly compact, with footprints of merely 3 × 4 µm2. Furthermore, we have extended the device's functionality for multifunctional operation in the C-band that can serve as both a 1 × 2 photonic switch and a 3 dB photonic power splitter. In the photonic switch mode, the device demonstrates an IL of 0.7 dB and a CT of -13.5 dB. In addition, when operating as a 3 dB photonic power splitter, the IL is less than 0.5 dB.

Single Quasi-1D Chains of Sb2Se3 Encapsulated within Carbon Nanotubes

The realization of stable monolayers from 2D van der Waals (vdW) solids has fueled the search for exfoliable crystals with even lower dimensionalities. To this end, 1D and quasi-1D (q-1D) vdW crystals comprising weakly bound subnanometer-thick chains have been discovered and demonstrated to exhibit nascent physics in the bulk. Although established micromechanical and liquid-phase exfoliation methods have been applied to access single isolated chains from bulk crystals, interchain vdW interactions with nonequivalent strengths have greatly hindered the ability to achieve uniform single isolated chains. Here, we report that encapsulation of the model q-1D vdW crystal, Sb2Se3, within single-walled carbon nanotubes (CNTs) circumvents the relatively stronger c-axis vdW interactions between the chains and allows for the isolation of single chains with structural integrity. High-resolution transmission electron microscopy and selected area electron diffraction studies of the Sb2Se3@CNT heterostructure revealed that the structure of the [Sb4Se6]n chain is preserved, enabling us to systematically probe the size-dependent properties of Sb2Se3 from the bulk down to a single chain. We show that ensembles of the [Sb4Se6]n chains within CNTs display Raman confinement effects and an emergent band-like absorption onset around 600 nm, suggesting a strong blue shift of the near-infrared band gap of Sb2Se3 into the visible range upon encapsulation. First-principles density functional theory calculations further provided qualitative insight into the structures and interactions that could manifest in the Sb2Se3@CNT heterostructure. Spatial visualization of the calculated electron density difference map of the heterostructure indicated a minimal degree of electron donation from the host CNT to the guest [Sb4Se6]n chain. Altogether, this model system demonstrates that 1D and q-1D vdW crystals with strongly anisotropic vdW interactions can be precisely studied by encapsulation within CNTs with suitable diameters, thereby opening opportunities in understanding dimension-dependent properties of a plethora of emergent vdW solids at or approaching the subnanometer regime.

Nanocavity tuning and formation controlled by the phase change of sub-micron-square GST patterns on Si photonic crystals

It has been well established that photonic crystal nanocavities with wavelength sized mode volume enable various integrable photonic devices with extremely small consumption energy and small footprint. In this study, we explore the possibility of non-volatile functionalities employing photonic crystal nanocavities and phase change material, Ge2Sb2Te5 (GST). Recently, non-volatile photonic devices based on GST have attracted significant interest and are expected to enable energy-efficient photonic processing, especially for optical computing. However, the device size and the area of GST in previous studies have been rather large. Here, we propose and fabricate Si photonic crystal nanocavities on which submicron-square GST patterns are selectively loaded. Because of the strong light confinement, extremely small area of GST is sufficient to manipulate the cavity mode. We have succeeded to fabricate 30-nm-thick and several-100nm-square GST blocks patterned at the center of photonic crystal cavity with a high alignment accuracy. We confirmed that the resonant wavelength and Q-factor of cavity modes are controlled by the phase change of GST. Moreover, cavity formation controlled by submicron-sized GST is also demonstrated by GST-loaded photonic-crystal line-defect waveguides. Our approach in which we place sub-micron-sized GST inside a photonic crystal nanocavity is promising for realizing extremely energy-efficient non-volatile integrable photonic devices, such as switches, modulators, memories, and reconfigurable novel devices.

Arbitrary Programming of Racetrack Resonators Using Low-Loss Phase-Change Material Sb2Se3

The programmable photonic integrated circuit (PIC) is an enabling technology behind optical interconnects and quantum information processing. Conventionally, the programmability of PICs is driven by the thermo-optic effect, free carrier dispersion, or mechanical tuning. These effects afford either high speed or a large extinction ratio, but all require constant power or bias to maintain the states, which is undesirable for programmability with infrequent switching. Recent progress in programmable PICs based on nonvolatile phase-change materials (PCMs) offers an attractive solution to a truly "set-and-forget" switch that requires zero static energy. Here, we report an essential building block of large-scale programmable PICs─a racetrack resonator with independent control of coupling and phase. We changed the resonance extinction ratio (ER) without perturbing the resonance wavelength, leveraging a programmable unit based on a directional coupler and a low-loss PCM Sb2Se3. The unit is only 33-μm-long and has an operating bandwidth over 50 nm, a low insertion loss (∼0.36 dB), high ER (∼15 dB), and excellent fabrication yield of over 1000 cycles endurance across nine switches. The work is a crucial step toward future large-scale energy-efficient programmable PICs.

Freeform direct-write and rewritable photonic integrated circuits in phase-change thin films

Photonic integrated circuits (PICs) with rapid prototyping and reprogramming capabilities promise revolutionary impacts on a plethora of photonic technologies. We report direct-write and rewritable photonic circuits on a low-loss phase-change material (PCM) thin film. Complete end-to-end PICs are directly laser-written in one step without additional fabrication processes, and any part of the circuit can be erased and rewritten, facilitating rapid design modification. We demonstrate the versatility of this technique for diverse applications, including an optical interconnect fabric for reconfigurable networking, a photonic crossbar array for optical computing, and a tunable optical filter for optical signal processing. By combining the programmability of the direct laser writing technique with PCM, our technique unlocks opportunities for programmable photonic networking, computing, and signal processing. Moreover, the rewritable photonic circuits enable rapid prototyping and testing in a convenient and cost-efficient manner, eliminate the need for nanofabrication facilities, and thus promote the proliferation of photonics research and education to a broader community.

Roadmap for phase change materials in photonics and beyond

Phase Change Materials (PCMs) have demonstrated tremendous potential as a platform for achieving diverse functionalities in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum, ranging from terahertz to visible frequencies. This comprehensive roadmap reviews the material and device aspects of PCMs, and their diverse applications in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum. It discusses various device configurations and optimization techniques, including deep learning-based metasurface design. The integration of PCMs with Photonic Integrated Circuits and advanced electric-driven PCMs are explored. PCMs hold great promise for multifunctional device development, including applications in non-volatile memory, optical data storage, photonics, energy harvesting, biomedical technology, neuromorphic computing, thermal management, and flexible electronics.

Time-Resolved Temperature Mapping Leveraging the Strong Thermo-Optic Effect in Phase-Change Materials

Optical phase-change materials are highly promising for emerging applications such as tunable metasurfaces, reconfigurable photonic circuits, and non-von Neumann computing. However, these materials typically require both high melting temperatures and fast quenching rates to reversibly switch between their crystalline and amorphous phases: a significant challenge for large-scale integration. In this work, we use temperature-dependent ellipsometry to study the thermo-optic effect in GST and use these results to demonstrate an experimental technique that leverages the thermo-optic effect in GST to enable both spatial and temporal thermal measurements of two common electro-thermal microheater designs currently used by the phase-change community. Our approach shows excellent agreement between experimental results and numerical simulations and provides a noninvasive method for rapid characterization of electrically programmable phase-change devices.

3D Nanostructuring of Phase-Change Materials Using Focused Ion Beam toward Versatile Optoelectronics Applications

In recent years, phase-change materials have gained importance in nanophotonics and optoelectronics. Sizable optical contrast and added degree of freedom from phase switching drive the use of phase-change materials in various optical devices with outstanding results and potential for real-world applications. The local crystallization/amorphization of phase-change materials and the corresponding reflectance tuning by the crystallized/amorphized region size have potential applications, for example, for future dynamic display devices. Although the resolution is much higher than in current display devices, the pixel sizes in those devices are limited by the locally switchable structure size. Here, the spot sizes are further reduced by using ion beams instead of laser beams, dramatically increasing pixel density, demonstrating superior resolution. In addition, the power to sputter away materials can be utilized in creating nanostructures with relative height differences and local contrast. The experiment focuses on one archetypal phase-change material, Sb2 Se3 , prepared by pulsed-laser deposition on a reflective gold substrate. This study demonstrates that structural colors can be produced and reflectance tuning can be achieved by focused ion beam milling/sputtering of phase-change materials at the nanoscale. Furthermore, the local structuring of phase-change materials by focused ion beam can produce high-pixel-density display devices with superior resolutions.

Integrated Bragg grating filters based on silicon-Sb2Se3 with non-volatile bandgap engineering capability

Integrated optical filters show outstanding capability in integrated reconfigurable photonic applications, including wavelength division multiplexing (WDM), programmable photonic processors, and on-chip quantum photonic networks. Present schemes for reconfigurable filters either have a large footprint or suffer from high static power consumption, hindering the development of reconfigurable photonic integrated systems. Here, a reconfigurable hybrid Bragg grating filter is elaborately designed through a precise, modified coupling mode theory. It is also experimentally presented by integrating non-volatile phase change material (PCM) Sb2Se3 on silicon to realize compact, low-loss, and broadband engineering operations. The fabricated filter holds a compact footprint of 0.5 µm × 43.5 µm and maintains a low insertion loss of < 0.5 dB after multiple levels of engineering to achieve crystallization. The filter is able to switch from a low-loss transmission state to the Bragg reflection state, making it a favorable solution for large-scale reconfigurable photonic circuits. With a switching extinction ratio over 30 dB at 1504.85 nm, this hybrid filter breaks the tradeoff between insertion loss and tuning range. These results reveal its potential as a new candidate for a basic element in large-scale non-volatile reconfigurable systems.

Inverse design of an ultra-compact dual-band wavelength demultiplexing power splitter with detailed analysis of hyperparameters

Inverse design has been widely studied as an efficient method to reduce footprint and improve performance for integrated silicon photonic (SiP) devices. In this study, we have used inverse design to develop a series of ultra-compact dual-band wavelength demultiplexing power splitters (WDPSs) that can simultaneously perform both wavelength demultiplexing and 1:1 optical power splitting. These WDPSs could facilitate the potential coexistence of dual-band passive optical networks (PONs). The design is performed on a standard silicon-on-insulator (SOI) platform using, what we believe to be, a novel two-step direct binary search (TS-DBS) method and the impact of different hyperparameters related to the physical structure and the optimization algorithm is analyzed in detail. Our inverse-designed WDPS with a minimum feature size of 130 nm achieves a 12.77-times reduction in footprint and a slight increase in performance compared with the forward-designed WDPS. We utilize the optimal combination of hyperparameters to design another WDPS with a minimum feature size reduced to 65 nm, which achieves ultra-low insertion losses of 0.36 dB and 0.37 dB and crosstalk values of -19.91 dB and -17.02 dB at wavelength channels of 1310 nm and 1550 nm, respectively. To the best of our knowledge, the hyperparameters of optimization-based inverse design are systematically discussed for the first time. Our work demonstrates that appropriate setting of hyperparameters greatly improves device performance, throwing light on the manipulation of hyperparameters for future inverse design.

A Review of Phase-Change Materials and Their Potential for Reconfigurable Intelligent Surfaces

Phase-change materials (PCMs) and metal-insulator transition (MIT) materials have the unique feature of changing their material phase through external excitations such as conductive heating, optical stimulation, or the application of electric or magnetic fields, which, in turn, results in changes to their electrical and optical properties. This feature can find applications in many fields, particularly in reconfigurable electrical and optical structures. Among these applications, the reconfigurable intelligent surface (RIS) has emerged as a promising platform for both wireless RF applications as well as optical ones. This paper reviews the current, state-of-the-art PCMs within the context of RIS, their material properties, their performance metrics, some applications found in the literature, and how they can impact the future of RIS.

Wavelength-shift-free racetrack resonator hybrided with phase change material for photonic in-memory computing

The photonic in-memory computing architecture based on phase change materials (PCMs) is increasingly attracting widespread attention due to its high computational efficiency and low power consumption. However, PCM-based microring resonator photonic computing devices face challenges in terms of resonant wavelength shift (RWS) for large-scale photonic network. Here, we propose a PCM-slot-based 1 × 2 racetrack resonator with free wavelength shift for in-memory computing. The low-loss PCMs such as Sb₂Se₃ and Sb₂S₃ are utilized to fill the waveguide slot of the resonator for the low insertion (IL) and high extinction ratio (ER). The Sb₂Se₃-slot-based racetrack resonator has an IL of 1.3 (0.1) dB and an ER of 35.5 (8.6) dB at the drop (through) port. The corresponding IL of 0.84 (0.27) dB and ER of 18.6 (10.11) dB are obtained for the Sb₂S₃-slot-based device. The change in optical transmittance of the two devices at the resonant wavelength is more than 80%. No shift of the resonance wavelength can be achieved upon phase change among the multi-level states. Moreover, the device exhibits a high degree of fabrication tolerance. The proposed device demonstrates ultra-low RWS, high transmittance-tuning range, and low IL, which provides a new scheme for realizing an energy-efficient and large-scale in-memory computing network.

Ultracompact programmable inverse-designed nanophotonic devices based on digital subwavelength structures

Inverse design is a powerful approach to achieve ultracompact nanophotonic devices. Here, we propose an ultracompact programmable near-infrared nanophotonic device platform to dynamically implement inverse-designed near-infrared devices with different functions by programming the state of the phase-change material filled in each pixel. By tuning PCM block by block, the subwavelength condition for inverse-designed ultracompact devices is satisfied with large tuning pixel size. Based on the inverse-design device platform with a footprint of 6.4µm×8µm, we design and theoretically demonstrate four power splitters with different split ratios and one mode multiplexer working in the near-infrared band. The average excess losses for the power splitters with ratios of 0:1,1:1, 2:1, and 3:1 are less than 0.82, 0.65, 0.82, and 1.03 dB over a wavelength span of 100 nm, respectively. Meanwhile, the insertion losses of the mode multiplexer are 1.4 and 2.5 dB for T E 0 and T E 1 mode, respectively, and the average crosstalk is less than -20 and -19d B, respectively. The five different devices could be configured online in a nonvolatile way by heating phase change materials with an off-chip laser, which may significantly enhance the flexibility of on-chip optical interconnections.

Inverse Design and Numerical Investigations of an Ultra-Compact Integrated Optical Switch Based on Phase Change Material

The miniaturization of optical switches is a promising prospect with the use of phase-change materials (PCMs), and exploring various strategies to effectively integrate PCMs with integrated optical waveguides represents an intriguing research question. In this study, an ultra-compact integrated optical switch based on PCM is proposed. This device consists of a Ge2Sb2Te5 nano-disk and an inverse-designed pixelated sub-wavelength structure. The pixelated sub-wavelength structure offers customized refractive indices that conventional materials or structures cannot achieve, leading to an improved insertion loss (IL) and extinction ratio (ER) performance of the device. Furthermore, this structure enhances the interaction between the optical field and GST, resulting in a reduction of the device size and the inserted GST footprint. With an ultra-compact device footprint of 0.9 µm × 1.5 µm, the simulation results exhibit a low IL of 0.45 dB, and a high ER of 18.0 dB at 1550 nm. Additionally, relevant studies show that this device is able to perform reliably despite minor variations in the manufacturing process.

Non-Volatile Reconfigurable Compact Photonic Logic Gates Based on Phase-Change Materials

Photonic logic gates have important applications in fast data processing and optical communication. This study aims to design a series of ultra-compact non-volatile and reprogrammable photonic logic gates based on the Sb₂Se₃ phase-change material. A direct binary search algorithm was adopted for the design, and four types of photonic logic gates (OR, NOT, AND, and XOR) are created using silicon-on-insulator technology. The proposed structures had very small sizes of 2.4 μm × 2.4 μm. Three-dimensional finite-difference time-domain simulation results show that, in the C-band near 1550 nm, the OR, NOT, AND, and XOR gates exhibit good logical contrast of 7.64, 6.1, 3.3, and 18.92 dB, respectively. This series of photonic logic gates can be applied in optoelectronic fusion chip solutions and 6G communication systems.

Highly efficient and tunable polarization rotator based on lithium niobate on an insulator

The lithium niobate on an insulator (LNOI) platform has greatly advanced the development of integrated photonics recently, where efficient polarization management components are indispensable. In this work, we propose a highly efficient and tunable polarization rotator based on the LNOI platform and the low-loss optical phase change material antimony triselenide (S b ₂ S e ₃). The key polarization rotation region is formed by a LNOI waveguide with a cross section of the double trapezoidal shape and a S b ₂ S e ₃ layer deposited atop the LNOI waveguide in an asymmetrical way, where an isolating layer of silicon dioxide is sandwiched between them to reduce the material absorption loss. Based on such a structure, we have achieved the efficient polarization rotation in a length of only 17.7 µm, where the polarization conversion efficiency and insertion loss are 99.6% (99.2%) and 0.38 dB (0.4 dB) for the trans-electric (TE)-to-trans-magnetic (TM) rotation. If we further change the phase state of the S b ₂ S e ₃ layer, other polarization rotation angles besides 90° can also be obtained for the same device, revealing a tunable function. We believe that the proposed device and design scheme could offer an efficient method for realizing the polarization management on the LNOI platform.

Compact nonvolatile polarization switch using an asymmetric Sb2Se3-loaded silicon waveguide

We propose and simulate a compact (∼29.5 µm-long) nonvolatile polarization switch based on an asymmetric Sb₂Se₃-clad silicon photonic waveguide. The polarization state is switched between TM₀ and TE₀ mode by modifying the phase of nonvolatile Sb₂Se₃ between amorphous and crystalline. When the Sb₂Se₃ is amorphous, two-mode interference happens in the polarization-rotation section resulting in efficient TE₀-TM₀ conversion. On the other hand, when the material is in the crystalline state, there is little polarization conversion because the interference between the two hybridized modes is significantly suppressed, and both TE₀ and TM₀ modes go through the device without any change. The designed polarization switch has a high polarization extinction ratio of > 20 dB and an ultra-low excess loss of < 0.22 dB in the wavelength range of 1520-1585 nm for both TE₀ and TM₀ modes.

Directional Scattering Switching from an All-Dielectric Phase Change Metasurface

All-dielectric metasurfaces are a blooming field with a wide range of new applications spanning from enhanced imaging to structural color, holography, planar sensors, and directionality scattering. These devices are nanopatterned structures of sub-wavelength dimensions whose optical behavior (absorption, reflection, and transmission) is determined by the dielectric composition, dimensions, and environment. However, the functionality of these metasurfaces is fixed at the fabrication step by the geometry and optical properties of the dielectric materials, limiting their potential as active reconfigurable devices. Herein, a reconfigurable all-dielectric metasurface based on two high refractive index (HRI) materials like silicon (Si) and the phase-change chalcogenide antimony triselenide (Sb₂Se₃) for the control of scattered light is proposed. It consists of a 2D array of Si-Sb₂Se₃-Si sandwich disks embedded in a SiO₂ matrix. The tunability of the device is provided through the amorphous-to-crystalline transition of Sb₂Se₃. We demonstrate that in the Sb₂Se₃ amorphous state, all the light can be transmitted, as it is verified using the zero-backward condition, while in the crystalline phase most of the light is reflected due to a resonance whose origin is the contribution of the electric (ED) and magnetic (MD) dipoles and the anapole (AP) of the nanodisks. By this configuration, a contrast in transmission (ΔT) of 0.81 at a wavelength of 980 nm by governing the phase of Sb₂Se₃ can be achieved.

Photonic machine learning with on-chip diffractive optics

Machine learning technologies have been extensively applied in high-performance information-processing fields. However, the computation rate of existing hardware is severely circumscribed by conventional Von Neumann architecture. Photonic approaches have demonstrated extraordinary potential for executing deep learning processes that involve complex calculations. In this work, an on-chip diffractive optical neural network (DONN) based on a silicon-on-insulator platform is proposed to perform machine learning tasks with high integration and low power consumption characteristics. To validate the proposed DONN, we fabricated 1-hidden-layer and 3-hidden-layer on-chip DONNs with footprints of 0.15 mm2 and 0.3 mm2 and experimentally verified their performance on the classification task of the Iris plants dataset, yielding accuracies of 86.7% and 90%, respectively. Furthermore, a 3-hidden-layer on-chip DONN is fabricated to classify the Modified National Institute of Standards and Technology handwritten digit images. The proposed passive on-chip DONN provides a potential solution for accelerating future artificial intelligence hardware with enhanced performance.

Interfacial Engineering of High-Performance, Solution-Processed Sb2S3 Phototransistors

Antimony sulfide, as a binary chalcogenide, has attracted great attention in the field of optoelectronics in recent years, particularly in photovoltaics, because of its striking merits such as earth elements abundance, excellent stability, chemical versatility, and solution processability. With the rapid development of fabrication techniques and device engineering, the device performance of Sb₂S₃ solar cells has experienced an unprecedented success. However, photodetectors based on Sb₂S₃ were barely reported, especially based on the transistor configuration. In this work, we prepared high quality Sb₂S₃ thin films via a sol-gel method, and Sb₂S₃ thin films were deposited on zinc-tin oxide based field-effect transistors. Furthermore, an additional electron transport layer was inserted between the Sb₂S₃ layers and the zinc-tin oxide channels and archived high-performance phototransistors with proper interfacial engineering. The optimized devices exhibited extremely high photosensitivity (10⁶), low dark current (∼10 pA) and noise (∼11 fA Hz^-1/2), high detectivity (1 × 10¹³ Jones), and superior device stability, indicating great potential for next generation solution-processed photodetectors.

On-Chip Reconfigurable and Ultracompact Silicon Waveguide Mode Converters Based on Nonvolatile Optical Phase Change Materials

Reconfigurable mode converters are essential components in efficient higher-order mode sources for on-chip multimode applications. We propose an on-chip reconfigurable silicon waveguide mode conversion scheme based on the nonvolatile and low-loss optical phase change material antimony triselenide (Sb₂Se₃). The key mode conversion region is formed by embedding a tapered Sb₂Se₃ layer into the silicon waveguide along the propagation direction and further cladding with graphene and aluminum oxide layers as the microheater. The proposed device can achieve the TE₀-to-TE₁ mode conversion and reconfigurable conversion (no mode conversion) depending on the phase state of embedded Sb₂Se₃ layer, whereas such function could not be realized according to previous reports. The proposed device length is only 2.3 μm with conversion efficiency (CE) = 97.5%, insertion loss (IL) = 0.2 dB, and mode crosstalk (CT) = -20.5 dB. Furthermore, the proposed device scheme can be extended to achieve other reconfigurable higher-order mode conversions. We believe the proposed reconfigurable mode conversion scheme and related devices could serve as the fundamental building blocks to provide higher-order mode sources for on-chip multimode photonics.

Micro Light Flow Controller on a Programmable Waveguide Engine

A light flow controller that can regulate the three-port optical power in both lossless and lossy modus is realized on a programmable multimode waveguide engine. The microheaters on the waveguide chip mimic the tunable "pixels" that can continuously adjust the local refractive index. Compared to the conventional method where the tuning takes place only on single-mode waveguides, the proposed structure is more compact and requires less electrodes. The local index changes in a multimode waveguide can alter the mode numbers, field distribution, and propagation constants of each individual mode, all of which can alter the multimode interference pattern significantly. However, these changes are mostly complex and not governed by analytical equations as in the single-mode case. Though numerical simulations can be performed to predict the device response, the thermal and electromagnetic computing involved is mostly time-consuming. Here, a multi-level search program is developed based on experiments only. It can reach a target output in real time by adjusting the microheaters collectively and iteratively. It can also jump over local optima and further improve the cost function on a global level. With only a simple waveguide structure and four microheaters, light can be routed freely into any of the three output ports with arbitrary power ratios, with and without extra attenuation. This work may trigger new ideas in developing compact and efficient photonic integrated devices for applications in optical communication and computing.

Chip-Based High-Dimensional Optical Neural Network

Parallel multi-thread processing in advanced intelligent processors is the core to realize high-speed and high-capacity signal processing systems. Optical neural network (ONN) has the native advantages of high parallelization, large bandwidth, and low power consumption to meet the demand of big data. Here, we demonstrate the dual-layer ONN with Mach-Zehnder interferometer (MZI) network and nonlinear layer, while the nonlinear activation function is achieved by optical-electronic signal conversion. Two frequency components from the microcomb source carrying digit datasets are simultaneously imposed and intelligently recognized through the ONN. We successfully achieve the digit classification of different frequency components by demultiplexing the output signal and testing power distribution. Efficient parallelization feasibility with wavelength division multiplexing is demonstrated in our high-dimensional ONN. This work provides a high-performance architecture for future parallel high-capacity optical analog computing.

Sb2Se3-assisted reconfigurable broadband Y-junction

A Y-junction is commonly used in on-chip systems because of its excellent broadband characteristic. However, due to the lack of regulation methods, in most cases Y-junctions are used as passive components. In this work we propose a reconfigurable broadband Y-junction based on phase change material. When Sb₂Se₃ layers on two branches are at different states, the Y-junction is asymmetric and works as a reconfigurable dual-mode (de)multiplexer. When both Sb₂Se₃ layers are amorphous, the Y-junction is symmetric and works as a dual-mode 3-dB power splitter. To achieve quasi-adiabatic evolution for both states in a short device length, we propose a segmented fast quasi-adiabatic method. By dividing the gap region into multiple segments and optimizing the geometry and length of each segment, the proposed device achieves bandwidth > 100 nm (crosstalk < -20 dB) in a compact footprint of 19.3 × 3 µm². The simulation result shows that at center wavelength of 1550 nm, the crosstalk and insertion loss of our device are < -41 dB and <0.12 dB, respectively, under asymmetric mode (de)multiplex state, and the excess loss is within 0.06 dB under symmetric power splitting state. The proposed device may contribute to the realization of a high-bandwidth, flexible mode-division-multiplexing network.

Thermo-optic tuning of silicon nitride microring resonators with low loss non-volatile [Formula: see text] phase change material

A new family of phase change material based on antimony has recently been explored for applications in near-IR tunable photonics due to its wide bandgap, manifested as broadband transparency from visible to NIR wavelengths. Here, we characterize [Formula: see text] optically and demonstrate the integration of this phase change material in a silicon nitride platform using a microring resonator that can be thermally tuned using the amorphous and crystalline states of the phase change material, achieving extinction ratios of up to 18 dB in the C-band. We extract the thermo-optic coefficient of the amorphous and crystalline states of the [Formula: see text] to be 3.4 x [Formula: see text] and 0.1 x 10[Formula: see text], respectively. Additionally, we detail the first observation of bi-directional shifting for permanent trimming of a non-volatile switch using continuous wave (CW) laser exposure ([Formula: see text] to 5.1 dBm) with a modulation in effective refractive index ranging from +5.23 x [Formula: see text] to [Formula: see text] x 10[Formula: see text]. This work experimentally verifies optical phase modifications and permanent trimming of [Formula: see text], enabling potential applications such as optically controlled memories and weights for neuromorphic architecture and high density switch matrix using a multi-layer PECVD based photonic integrated circuit.

Plasmonic hot-electron reconfigurable photodetector based on phase-change material Sb2S3

Hot-carrier based photodetectors and enhanced by surface plasmons (SPs) hot-electron injection into semiconductors, are drawing significant attention. This photodetecting strategy yields to narrowband photoresponse while enabling photodetection at sub-bandgap energies of the semiconductor materials. In this work, we analyze the design of a reconfigurable photodetector based on a metal-semiconductor (MS) configuration with interdigitated dual-comb Au electrodes deposited on the semiconducting Sb₂S₃ phase-change material. The reconfigurability of the device relies on the changes of refractive index between the amorphous and crystalline phases of Sb₂S₃ that entail a modulation of the properties of the SPs generated at the dual-comb Au electrodes. An exhaustive numerical study has been realized on the Au grating parameters formed by the dual-comb electrodes, and on the SP order with the purpose of optimizing the absorption of the device, and thus, the responsivity of the photodetector. The optimized photodetector layout proposed here enables tunable narrowband photodetection from the O telecom band (λ = 1310 nm) to the C telecom band (λ = 1550 nm).

Design of plasmonic enhanced all-optical phase-change memory for secondary storage applications

Phase-change optical device has recently gained tremendous interest due to its ultra-fast transmitting speed, multiplexing and large bandwidth. However, majority of phase-change optical devices are only devoted to on-chip components such as optical tensor core and optical main memory, while developing a secondary storage memory in an optical manner is rarely reported. To address this issue, we propose a novel phase-change optical memory based on plasmonic resonance effects for secondary storage applications. Such design makes use of the plasmonic dimer nanoantenna to generate plasmonic resonance inside the chalcogenide alloy, and thus enables the performance improvements in terms of energy consumption and switching speed. It is found that choosing height, radius, and separation of the plasmonic nanoantenna as 10 nm, 150 nm, and 10 nm, respectively, allows for a write/erase energies of 100 and 240 pJ and a write/erase speed of 10 ns for crystallization and amorphization processes, respectively. Such performance merits encouragingly prevail conventional secondary storage memories and thus pave a route towards the advent of all-optical computer in near future.

Compact nonvolatile 2×2 photonic switch based on two-mode interference

On-chip nonvolatile photonic switches enabled by phase change materials (PCMs) are promising building blocks for power-efficient programmable photonic integrated circuits. However, large absorption loss in conventional PCMs (such as Ge₂Sb₂Te₅) interacting with weak evanescent waves in silicon waveguides usually leads to high insertion loss and a large device footprint. In this paper, we propose a 2×2 photonic switch based on two-mode interference in a multimode slot waveguide (MSW) with ultralow loss Sb₂S₃ integrated inside the slot region. The MSW supports two lowest order TE modes, i.e., symmetric TE₀₀ and antisymmetric TE₀₁ modes, and the phase of Sb₂S₃ could actively tune two-mode interference behavior. Owing to the enhanced electric field in the slot, the interaction strength between modal field and Sb₂S₃ could be boosted, and a photonic switch containing a ∼9.4 µm-long Sb₂S₃-MSW hybrid section could effectively alter the light transmission between bar and cross ports upon the phase change of Sb₂S₃ with a cross talk (CT) less than -13.6 dB and an insertion loss (IL) less than 0.26 dB in the telecommunication C-band. Especially at 1550 nm, the CT in the amorphous (crystalline) Sb₂S₃ is -36.1 dB (-31.1 dB) with a corresponding IL of 0.073 dB (0.055 dB). The proposed 2×2 photonic switch is compact in size and compatible with on-chip microheaters, which may find promising applications in reconfigurable photonic devices.

Ultra-low-energy programmable non-volatile silicon photonics based on phase-change materials with graphene heaters

Silicon photonics is evolving from laboratory research to real-world applications with the potential to transform many technologies, including optical neural networks and quantum information processing. A key element for these applications is a reconfigurable switch operating at ultra-low programming energy-a challenging proposition for traditional thermo-optic or free carrier switches. Recent advances in non-volatile programmable silicon photonics based on phase-change materials (PCMs) provide an attractive solution to energy-efficient photonic switches with zero static power, but the programming energy density remains high (hundreds of attojoules per cubic nanometre). Here we demonstrate a non-volatile electrically reconfigurable silicon photonic platform leveraging a monolayer graphene heater with high energy efficiency and endurance. In particular, we show a broadband switch based on the technologically mature PCM Ge₂Sb₂Te₅ and a phase shifter employing the emerging low-loss PCM Sb₂Se₃. The graphene-assisted photonic switches exhibited an endurance of over 1,000 cycles and a programming energy density of 8.7 ± 1.4 aJ nm^-3, that is, within an order of magnitude of the PCM thermodynamic switching energy limit (~1.2 aJ nm^-3) and at least a 20-fold reduction in switching energy compared with the state of the art. Our work shows that graphene is a reliable and energy-efficient heater compatible with dielectric platforms, including Si₃N₄, for technologically relevant non-volatile programmable silicon photonics.

Interlaboratory study on Sb2S3 interplay between structure, dielectric function, and amorphous-to-crystalline phase change for photonics

Antimony sulfide, Sb2S3, is interesting as the phase-change material for applications requiring high transmission from the visible to telecom wavelengths, with its band gap tunable from 2.2 to 1.6 eV, depending on the amorphous and crystalline phase. Here we present results from an interlaboratory study on the interplay between the structural change and resulting optical contrast during the amorphous-to-crystalline transformation triggered both thermally and optically. By statistical analysis of Raman and ellipsometric spectroscopic data, we have identified two regimes of crystallization, namely 250°C ≤ T < 300°C, resulting in Type-I spherulitic crystallization yielding an optical contrast Δn ∼ 0.4, and 300 ≤ T < 350°C, yielding Type-II crystallization bended spherulitic structure with different dielectric function and optical contrast Δn ∼ 0.2 below 1.5 eV. Based on our findings, applications of on-chip reconfigurable nanophotonic phase modulators and of a reconfigurable high-refractive-index core/phase-change shell nanoantenna are designed and proposed.

Tunable Color-Variable Solar Absorber Based on Phase Change Material Sb2Se3

In this paper, a dynamic color-variable solar absorber is designed based on the phase change material Sb2Se3. High absorption is maintained under both amorphous Sb2Se3 (aSb2Se3) and crystalline Sb2Se3 (cSb2Se3). Before and after the phase transition leading to the peak change, the structure shows a clear color contrast. Due to peak displacement, the color change is also evident for different crystalline fractions during the phase transition. Different incident angles irradiate the structure, which can also cause the structure to show rich color variations. The structure is insensitive to the polarization angle because of the high symmetry. At the same time, different geometric parameters enable different color displays, so the structure can have good application prospects.

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

A Photoelectric Spiking Neuron for Visual Depth Perception

The biological visual system encodes optical information into spikes and processes them by the neural network, which enables the perception with high throughput of visual processing with ultralow energy budget. This has inspired a wide spectrum of devices to imitate such neural process, while precise mimicking such procedure is still highly required. Here, a highly bio-realistic photoelectric spiking neuron for visual depth perception is presented. The firing spikes generated by the TaO_X memristive spiking encoders have a biologically similar frequency range of 1-200 Hz and sub-micro watts power. Such spiking encoder is integrated with a photodetector and a network of neuromorphic transistors, for information collection and recognition tasks, respectively. The distance-dependent response and eye fatigue of biological visual systems have been mimicked based on such photoelectric spiking neuron. The simulated depth perception shows a recognition improvement by adapting to sights at different distances. The results can advance the technologies in bioinspired or robotic systems that may be endowed with depth perception and power efficiency at the same time.

Electrically driven reprogrammable phase-change metasurface reaching 80% efficiency

Phase-change materials (PCMs) offer a compelling platform for active metaoptics, owing to their large index contrast and fast yet stable phase transition attributes. Despite recent advances in phase-change metasurfaces, a fully integrable solution that combines pronounced tuning measures, i.e., efficiency, dynamic range, speed, and power consumption, is still elusive. Here, we demonstrate an in situ electrically driven tunable metasurface by harnessing the full potential of a PCM alloy, Ge₂Sb₂Te₅ (GST), to realize non-volatile, reversible, multilevel, fast, and remarkable optical modulation in the near-infrared spectral range. Such a reprogrammable platform presents a record eleven-fold change in the reflectance (absolute reflectance contrast reaching 80%), unprecedented quasi-continuous spectral tuning over 250 nm, and switching speed that can potentially reach a few kHz. Our scalable heterostructure architecture capitalizes on the integration of a robust resistive microheater decoupled from an optically smart metasurface enabling good modal overlap with an ultrathin layer of the largest index contrast PCM to sustain high scattering efficiency even after several reversible phase transitions. We further experimentally demonstrate an electrically reconfigurable phase-change gradient metasurface capable of steering an incident light beam into different diffraction orders. This work represents a critical advance towards the development of fully integrable dynamic metasurfaces and their potential for beamforming applications.

The authors demonstrate an efficient platform for electrically driven reconfigurable metasurfaces by using Ge₂Sb₂Te₅ to realize non-volatile, reversible, multilevel, and fast optical modulation and wavefront engineering in the near-infrared spectral range.

A Non-Volatile Tunable Ultra-Compact Silicon Photonic Logic Gate

Logic gates, as one of the most important basic units in electronic integrated circuits (EICs), are also equally important in photonic integrated circuits (PICs). In this study, we proposed a non-volatile, ultra-compact all-photonics logic gate. The footprint is only 2 μm × 2 μm. We regulate the phase change of optical phase change materials(O-PCMs) Sb₂Se₃ to switch the function of the logic gate. The Sb₂Se₃ possess a unique non-volatile optical phase change function; therefore, when Sb₂Se₃ is in the crystalline or amorphous state, our device can work as XOR gate or AND gate, and our designed logic ‘1’ and logic ‘0’ contrasts reach 11.8 dB and 5.7 dB at 1550 nm, respectively. Compared with other traditional optical logic gates, our device simultaneously has non-volatile characteristics, tunability, and additionally an ultra-small size. These results could fully meet the needs of fusion between PICs and EICs, and developing truly chip-scale optoelectronic logic solution.

Reconfigurable hybrid silicon waveguide Bragg filter using ultralow-loss phase-change material

Reconfigurable silicon photonic devices attract much research attention, and hybrid integration with tunable phase-change materials (PCMs) exhibiting large refractive index contrast between amorphous (Am) and crystalline (Cr) states is a promising way to achieve this goal. Here, we propose and numerically investigate a Sb₂Se₃-Si hybrid waveguide Bragg filter operating in the telecom C-band on the silicon-on-insulator (SOI) platform. The proposed device consists of a Bragg grating (BG) with a thin top layer of ultralow-loss Sb₂Se₃ PCM interacting with evanescent field of the silicon waveguide mode. By harnessing the ultralow-loss and reversible index change of Sb₂Se₃ film, the spectral response of the hybrid BGs could be dynamically tuned. We also theoretically investigate the reversible phase transitions between Am and Cr states of Sb₂Se₃ film that could be attained by applying voltage pulses on the indium-tin-oxide (ITO) strip heater covered on Sb₂Se₃ film. Thermal simulations show that a 2 V (4.5 V) pulse with a duration of 400 ns (55 ns) applied to electric contacts would produce crystallization (or amorphization). The proposed structure may find great potential for on-chip phase tunable devices on a silicon platform.

Non-Volatile Programmable Ultra-Small Photonic Arbitrary Power Splitters

A series of reconfigurable compact photonic arbitrary power splitters are proposed based on the hybrid structure of silicon and Ge₂Sb₂Se₄Te₁ (GSST), which is a new kind of non-volatile optical phase change material (O-PCM) with low absorption. Our pixelated meta-hybrid has an extremely small photonic integrated circuit (PIC) footprint with a size comparable to that of the most advanced electronic integrated circuits (EICs). The power-split ratio can be reconfigured in a completely digital manner through the amorphous and crystalline switching of the GSST material, which only coated less than one-fifth of the pattern allocation area. The target power–split ratio between the output channels can be arbitrarily reconfigured digitally with high precision and in the valuable C-band (1530–1560 nm) based on the analysis of three-dimensional finite-difference time-domain. The 1 × 2, 1 × 3, and 1 × 4 splitting configurations were all investigated with a variety of power–split ratios for each case, and the corresponding true value tables of GSST distribution are given. These non-volatile hybrid photonic splitters offer the advantages of an extremely small footprint and non-volatile digital programmability, which are favorable to the truly optoelectronic fusion chip.

Ge Ion Implanted Photonic Devices and Annealing for Emerging Applications

Germanium (Ge) ion implantation into silicon waveguides will induce lattice defects in the silicon, which can eventually change the crystal silicon into amorphous silicon and increase the refractive index from 3.48 to 3.96. A subsequent annealing process, either by using an external laser or integrated thermal heaters can partially or completely remove those lattice defects and gradually change the amorphous silicon back into the crystalline form and, therefore, reduce the material’s refractive index. Utilising this change in optical properties, we successfully demonstrated various erasable photonic devices. Those devices can be used to implement a flexible and commercially viable wafer-scale testing method for a silicon photonics fabrication line, which is a key technology to reduce the cost and increase the yield in production. In addition, Ge ion implantation and annealing are also demonstrated to enable post-fabrication trimming of ring resonators and Mach–Zehnder interferometers and to implement nonvolatile programmable photonic circuits.

Reconfigurable label-free shape-sieving of submicron particles in paired chalcogenide waveguides

Up-to-date particle sieving schemes face formidable challenges for sieving label-free submicron molecules with similar sizes and dielectric constants but diverse shapes. Herein, optical sorting of polystyrene particles with various shapes is illustrated in optofluidic nanophotonic paired waveguide (ONPW) composed of chalcogenide semiconductor Sb₂Se₃. The Sb₂Se₃-ONPW creates the coupling length (C_L) between the neighboring hot spots that can be actively modulated via the transition of Sb₂Se₃ between amorphous (AM) and crystalline (CR) phases. Submicron particles interfere with the coupled hotspots, which can exert various optical torques on the particles according to their profiles. In the model system, spherical (diameter of 0.5 μm) and rod-shaped (diameter of 0.5 μm, length of 1.5 μm) polystyrene particles were employed to mimic two types of bacteria, namely, Staphylococcus aureus and rod-shaped Escherichia coli, respectively. For the AM state, the C_L value is ∼7.0 μm, enabling the structure to trap the sphere stably in the hot spots. For the CR state, the C_L value becomes ∼25 μm, leading to stable trapping of the rod-shaped particle. In this work, the working wavelength was fixed at 1.55 μm at which both AM- and CR-Sb₂Se₃ are transparent. Our scheme may offer a paradigm shift in shape-selective sieving of biomolecules and fulfill the requirements of the new-generation lab-on-chip techniques, where the integrated manipulation system must be much more multifunctional and flexible.