1
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Wang D, Cui J, Feng Y, Guo Y, Zhang J, Bao Y, Deng H, Chen R, Kang X, Zhang B, Song L, Huang W. A Universal Approach Toward Intrinsically Flexible All-Inorganic Perovskite-Gel Composites with Full-Color Luminescence. RESEARCH (WASHINGTON, D.C.) 2024; 7:0412. [PMID: 38979517 PMCID: PMC11227898 DOI: 10.34133/research.0412] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Accepted: 05/27/2024] [Indexed: 07/10/2024]
Abstract
The combination of all-inorganic perovskites (PVSKs) and polymers allows for free-standing flexible optoelectronic devices. However, solubility difference of the PVSK precursors and concerns over the compatibility between polymer carriers and PVSKs imply a great challenge to incorporate different kinds of PVSKs into polymer matrices by the same manufacturing process. In this work, PVSK precursors are introduced into poly(2-hydroxyethyl acrylate) (PHEA) hydrogels in sequence, in which the PVSK-gel composites are achieved with full-color emissions by simply varying the precursor species. Moreover, it is found that CsBr has a higher interaction energy with the (111) plane of CsPbBr3 than the (110) plane; thus, the CsPbBr3 crystals with a shape of truncated cube and tetragon are observed during the CsPbBr3-Cs4PbBr6 phase transition over time. The PVSK-gel composites feature excellent bendability, elasticity, and stretchable deformation (tensile strain > 500%), which allows for 3D printing emissive customized stereoscopic architectures with shape-memory features.
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Affiliation(s)
- Dourong Wang
- Frontiers Science Center for Flexible Electronics (FSCFE),
Institute of Flexible Electronics (IFE), Ningbo Institute of Northwestern Polytechnical University, Northwestern Polytechnical University, Xi’an 710072, China
| | - Jingjing Cui
- Frontiers Science Center for Flexible Electronics (FSCFE),
Institute of Flexible Electronics (IFE), Ningbo Institute of Northwestern Polytechnical University, Northwestern Polytechnical University, Xi’an 710072, China
| | - Yang Feng
- Frontiers Science Center for Flexible Electronics (FSCFE),
Institute of Flexible Electronics (IFE), Ningbo Institute of Northwestern Polytechnical University, Northwestern Polytechnical University, Xi’an 710072, China
| | - Yunlong Guo
- Frontiers Science Center for Flexible Electronics (FSCFE),
Institute of Flexible Electronics (IFE), Ningbo Institute of Northwestern Polytechnical University, Northwestern Polytechnical University, Xi’an 710072, China
| | - Jie Zhang
- Frontiers Science Center for Flexible Electronics (FSCFE),
Institute of Flexible Electronics (IFE), Ningbo Institute of Northwestern Polytechnical University, Northwestern Polytechnical University, Xi’an 710072, China
| | - Yaqi Bao
- Frontiers Science Center for Flexible Electronics (FSCFE),
Institute of Flexible Electronics (IFE), Ningbo Institute of Northwestern Polytechnical University, Northwestern Polytechnical University, Xi’an 710072, China
| | - Haoran Deng
- Frontiers Science Center for Flexible Electronics (FSCFE),
Institute of Flexible Electronics (IFE), Ningbo Institute of Northwestern Polytechnical University, Northwestern Polytechnical University, Xi’an 710072, China
| | - Ruiqian Chen
- Frontiers Science Center for Flexible Electronics (FSCFE),
Institute of Flexible Electronics (IFE), Ningbo Institute of Northwestern Polytechnical University, Northwestern Polytechnical University, Xi’an 710072, China
| | - Xinxin Kang
- Frontiers Science Center for Flexible Electronics (FSCFE),
Institute of Flexible Electronics (IFE), Ningbo Institute of Northwestern Polytechnical University, Northwestern Polytechnical University, Xi’an 710072, China
| | - Biao Zhang
- Frontiers Science Center for Flexible Electronics (FSCFE),
Institute of Flexible Electronics (IFE), Ningbo Institute of Northwestern Polytechnical University, Northwestern Polytechnical University, Xi’an 710072, China
| | - Lin Song
- Frontiers Science Center for Flexible Electronics (FSCFE),
Institute of Flexible Electronics (IFE), Ningbo Institute of Northwestern Polytechnical University, Northwestern Polytechnical University, Xi’an 710072, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE),
Institute of Flexible Electronics (IFE), Ningbo Institute of Northwestern Polytechnical University, Northwestern Polytechnical University, Xi’an 710072, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM),
Nanjing Tech University (NanjingTech), Nanjing 211816, China
- Key Laboratory for Organic Electronics & Information Displays (KLOEID) and Institute of Advanced Materials (IAM),
Nanjing University of Posts & Telecommunications, Nanjing 210023, China
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2
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Yin H, Pang J, Zhao S, Wu H, Song Z, Li X, Zheng Z, Xu L, Tang J, Niu G. Retinomorphic X-ray detection using perovskite with hydrion-conductive organic cations. Innovation (N Y) 2024; 5:100654. [PMID: 39021527 PMCID: PMC11253655 DOI: 10.1016/j.xinn.2024.100654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Accepted: 06/03/2024] [Indexed: 07/20/2024] Open
Abstract
X-ray detection is crucial across various sectors, but traditional techniques face challenges such as inefficient data transmission, redundant sensing, high power consumption, and complexity. The innovative idea of a retinomorphic X-ray detector shows great potential. However, its implementation has been hindered by the absence of active layers capable of both detecting X-rays and serving as memory storage. In response to this critical gap, our study integrates hybrid perovskite with hydrion-conductive organic cations to develop a groundbreaking retinomorphic X-ray detector. This novel device stands at the nexus of technological innovation, utilizing X-ray detection, memory, and preprocessing capabilities within a single hardware platform. The core mechanism underlying this innovation lies in the transport of electrons and holes within the metal halide octahedral frameworks, enabling precise X-ray detection. Concurrently, the hydrion movement through organic cations endows the device with short-term resistive memory, facilitating rapid data processing and retrieval. Notably, our retinomorphic X-ray detector boasts an array of formidable features, including reconfigurable short-term memory, a linear response curve, and an extended retention time. In practical terms, this translates into the efficient capture of motion projections with minimal redundant data, achieving a compression ratio of 18.06% and an impressive recognition accuracy of up to 98.6%. In essence, our prototype represents a paradigm shift in X-ray detection technology. With its transformative capabilities, this retinomorphic hardware is poised to revolutionize the existing X-ray detection landscape.
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Affiliation(s)
- Hang Yin
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jincong Pang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Shan Zhao
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Haodi Wu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zihao Song
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xing Li
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
| | - Zhiping Zheng
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Optical Valley Laboratory, Wuhan 430074, China
| | - Ling Xu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Optical Valley Laboratory, Wuhan 430074, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Optical Valley Laboratory, Wuhan 430074, China
| | - Guangda Niu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Optical Valley Laboratory, Wuhan 430074, China
- Research Institute of Huazhong University of science and technology in Shenzhen, Shenzhen 518057, China
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3
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Chen H, Zhu Z, Zhao B, Huang W, Qu G, Xu Z, Yu X, Xiao Q, Yang S, Li Y. Vertically Oriented Quasi-2D Perovskite Grown In-Situ by Carbonyl Array-Synergized Crystallization for Direct X-Ray Detectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2309185. [PMID: 38741387 PMCID: PMC11267269 DOI: 10.1002/advs.202309185] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Revised: 03/12/2024] [Indexed: 05/16/2024]
Abstract
Quasi-2D perovskite quantum wells are increasingly recognized as promising candidates for direct-conversion X-ray detection. However, the fabrication of oriented and uniformly thick quasi-2D perovskite films, crucial for effective high-energy X-ray detection, is hindered by the inherent challenges of preferential crystallization at the gas-liquid interface, resulting in poor film quality. In addressing this limitation, a carbonyl array-synergized crystallization (CSC) strategy is employed for the fabrication of thick films of a quasi-2D Ruddlesden-Popper (RP) phase perovskite, specifically PEA2MA4Pb5I16. The CSC strategy involves incorporating two forms of carbonyls in the perovskite precursor, generating large and dense intermediates. This design reduces the nucleation rate at the gas-liquid interface, enhances the binding energies of Pb2+ at (202) and (111) planes, and passivates ion vacancy defects. Consequently, the construction of high-quality thick films of PEA2MA4Pb5I16 RP perovskite quantum wells is achieved and characterized by vertical orientation and a pure well-width distribution. The corresponding PEA2MA4Pb5I16 RP perovskite X-ray detectors exhibit multi-dimensional advantages in performance compared to previous approaches and commercially available a-Se detectors. This CSC strategy promotes 2D perovskites as a candidate for next-generation large-area flat-panel X-ray detection systems.
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Affiliation(s)
- Huiwen Chen
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
- School of Materials Science and EngineeringAnhui University of Science & TechnologyHuainan232001China
| | - Ziyao Zhu
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
| | - Bo Zhao
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
| | - Weixiong Huang
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
| | - Geping Qu
- Department of ChemistrySouthern University of Science and TechnologyShenzhen518055China
| | - Zong‐Xiang Xu
- Department of ChemistrySouthern University of Science and TechnologyShenzhen518055China
| | - Xue‐Feng Yu
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
| | - Quanlan Xiao
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060China
| | - Shihe Yang
- Guangdong Key Lab of Nano‐Micro Material ResearchSchool of Chemical Biology and BiotechnologyShenzhen Graduate SchoolPeking UniversityShenzhen518055China
| | - Yunlong Li
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
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4
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Li Y, Liu H, Ding L, Li L, Wang L, Yang D, Fang Y. Sensitive and Low-Noise Perovskite Nanocrystal-Organic Bulk Heterostructure X-ray Detectors Enabled by Sodium Bromide-Assisted In Situ Reparation. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38700992 DOI: 10.1021/acsami.4c01567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
Perovskite nanocrystals (PNCs) offer unique advantages in large-area and thick-film deposition for X-ray detection applications due to the decoupling of the crystallization of perovskite from film formation, as well as their low-temperature and scalable deposition methods. However, the partial detachment of long-chain ligands in PNCs during the purification process would lead to the exposure of surface defects, making it challenging to ensure efficient charge carrier extraction and stable X-ray detection. In this study, we propose a beneficial strategy that involves the in situ reparation of these exposed defects with sodium bromide (NaBr) during the purification process to construct CsPbBr3 PNC-organic bulk heterostructure X-ray detectors. The NaBr-passivated PNCs exhibit stronger photoluminescence intensity and lower trap density in films compared to those of the control samples, confirming the effective passivation of halide vacancy defects. Furthermore, the NiOx hole transport layer with remarkable electron blocking capability is introduced to further suppress the dark current of the devices. Consequently, the optimal devices exhibit a large sensitivity of 4237 μC Gyair-1 cm-2 and a low dark current density of 10 nA cm-2, as well as improved operational stability, which allows for high-contrast and low-dose X-ray imaging applications.
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Affiliation(s)
- Yuyang Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Hui Liu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Li Ding
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Liqi Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Lixiang Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Deren Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
- Shangyu Institute of Semiconductor Materials, Shaoxing 312300, P. R. China
| | - Yanjun Fang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030024, P. R. China
- Shangyu Institute of Semiconductor Materials, Shaoxing 312300, P. R. China
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5
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Li L, Tao L, Wang L, Li Y, Li J, Ni Z, Fang Y, Yang D. Monolithic integration of perovskite heterojunction on TFT backplanes through vapor deposition for sensitive and stable x-ray imaging. SCIENCE ADVANCES 2024; 10:eadj8659. [PMID: 38669325 PMCID: PMC11051656 DOI: 10.1126/sciadv.adj8659] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 03/27/2024] [Indexed: 04/28/2024]
Abstract
Metal halide perovskites exhibit substantial potential for advancing next-generation x-ray detection. However, fabricating high-performance pixelated imaging arrays remains challenging due to the substantial dark current density and stability issues associated with common organic-inorganic hybrid perovskites. Here, we develop a vapor deposition method to create the first all-inorganic perovskite heterojunction film. The heterojunction introduction effectively reduces the dark current density of detectors to about 0.8 nA·cm-2, satisfying thin-film transistor (TFT) integration standards, while also increases sensitivity to above 2.6 × 104 μC·Gyair-1·cm-2, thus giving rise to a record low detection limit of <1 nGyair·s-1 among all polycrystalline perovskite-based x-ray detectors. The devices also demonstrate remarkable stability across multifarious demanding working conditions. Last, through monolithic integration of the heterojunction film with a 64 × 64 pixelated TFT array, we have achieved high-resolution real-time x-ray imaging, which paves the way for the application of all-inorganic perovskite in low-dose flat-panel x-ray detection.
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Affiliation(s)
- Liqi Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Liting Tao
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Lixiang Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Yuyang Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Jiawen Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Zhenyi Ni
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Yanjun Fang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030024, P. R. China
- Shangyu Institute of Semiconductor Materials, Shaoxing 312366, P. R. China
| | - Deren Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
- Shangyu Institute of Semiconductor Materials, Shaoxing 312366, P. R. China
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6
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Liu X, Cui Q, Li H, Wang S, Zhang Q, Huang W, Liu C, Cai W, Li T, Yang Z, Ma C, Ren L, Liu SF, Zhao K. Biocompatible Metal-Free Perovskite Membranes for Wearable X-ray Detectors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16300-16308. [PMID: 38513050 DOI: 10.1021/acsami.4c01069] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Halide perovskites are emerging as promising materials for X-ray detection owing to their compatibility with flexible fabrication, cost-effective solution processing, and exceptional carrier transport behaviors. However, the challenge of removing lead from high-performing perovskites, crucial for wearable electronics, while retaining their superior performance, persists. Here, we present for the first time a highly sensitive and robust flexible X-ray detector utilizing a biocompatible, metal-free perovskite, MDABCO-NH4I3 (MDABCO = methyl-N'-diazabicyclo[2.2.2]octonium). This wearable X-ray detector, based on a MDABCO-NH4I3 thick membrane, exhibits remarkable properties including a large resistivity of 1.13 × 1011 Ω cm, a high mobility-lifetime product (μ-τ) of 1.64 × 10-4 cm2 V-1, and spin Seebeck effect coefficient of 1.9 nV K-1. We achieve a high sensitivity of 6521.6 ± 700 μC Gyair-1 cm-2 and a low detection limit of 77 nGyair s-1, ranking among the highest for biocompatible X-ray detectors. Additionally, the device exhibits effective X-ray imaging at a low dose rate of 1.87 μGyair s-1, which is approximately one-third of the dose rate used in regular medical diagnostics. Crucially, both the MDABCO-NH4I3 thick membrane and the device showcase excellent mechanical robustness. These attributes render the flexible MDABCO-NH4I3 thick membranes highly competitive for next-generation, high-performance, wearable X-ray detection applications.
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Affiliation(s)
- Xinmei Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Qingyue Cui
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Haojin Li
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Shumei Wang
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Qi Zhang
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Wenliang Huang
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Chou Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Weilun Cai
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Telun Li
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Zhou Yang
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Chuang Ma
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Lixia Ren
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Shengzhong Frank Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
- Dalian National Laboratory for Clean Energy; iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P. R. China
| | - Kui Zhao
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
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7
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Zhu ZK, Zhu T, You S, Yu P, Wu J, Zeng Y, Guan Q, Li Z, Qu C, Zhong H, Li L, Luo J. Chiral-Achiral Cations Intercalation Induced Lead-Free Chiral-Polar Hybrid Perovskites Enable Self-Powered X-Ray and Ultraviolet-Visible-Near-Infrared Photo Detection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307454. [PMID: 37948430 DOI: 10.1002/smll.202307454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 10/28/2023] [Indexed: 11/12/2023]
Abstract
Lead halide hybrid perovskites have made great progress in direct X-ray detection and broadband photodetection, but the existence of toxic Pb and the demand for external operating voltage have severely limited their further applications and operational stability improvements. Therefore, exploring "green" lead-free hybrid perovskite that can both achieve X-ray detection and broadband photodetection without external voltage is of great importance, but remains severely challenging. Herein, using centrosymmetric (BZA)3BiI6 (1, BZA = benzylamine) as a template, a pair of chiral-polar lead-free perovskites, (BZA)2(R/S-PPA)BiI6 (2-R/S, R/S-PPA = (R/S)-1-Phenylpropylamine) are successfully obtained by introducing chiral aryl cations of (R/S)-1-Phenylpropylamine. Compared to 1, chiral-polar 2-R presents a significant irradiation-responsive bulk photovoltaic effect (BPVE) with an open circuit photovoltage of 0.4 V, which enables it with self-powered X-ray, UV-vis-NIR broadband photodetection. Specifically, 2-R device exhibits an ultralow detection limit of 18.5 nGy s-1 and excellent operational stability. Furthermore, 2-R as the first lead-free perovskite achieves significant broad-spectrum (377-940 nm) photodetection via light-induced pyroelectric effect. This work sheds light on the rational crystal reconstruction engineering and design of "green" hybrid perovskite toward high-demanded self-powered radiation detection and broadband photodetection.
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Affiliation(s)
- Zeng-Kui Zhu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- School of Chemistry and Chemical Engineering, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, Jiangxi, 330022, China
| | - Tingting Zhu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Shihai You
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Panpan Yu
- School of Chemistry and Chemical Engineering, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, Jiangxi, 330022, China
| | - Jianbo Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ying Zeng
- School of Chemistry and Chemical Engineering, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, Jiangxi, 330022, China
| | - Qianwen Guan
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhou Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Chang Qu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Haiqing Zhong
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Lina Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- School of Chemistry and Chemical Engineering, Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, Nanchang, Jiangxi, 330022, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, China
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8
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Dudipala KR, Le TH, Nie W, Hoye RLZ. Halide Perovskites and Their Derivatives for Efficient, High-Resolution Direct Radiation Detection: Design Strategies and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304523. [PMID: 37726105 DOI: 10.1002/adma.202304523] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2023] [Revised: 09/03/2023] [Indexed: 09/21/2023]
Abstract
The past decade has witnessed a rapid rise in the performance of optoelectronic devices based on lead-halide perovskites (LHPs). The large mobility-lifetime products and defect tolerance of these materials, essential for optoelectronics, also make them well-suited for radiation detectors, especially given the heavy elements present, which is essential for strong X-ray and γ-ray attenuation. Over the past decade, LHP thick films, wafers, and single crystals have given rise to direct radiation detectors that have outperformed incumbent technologies in terms of sensitivity (reported values up to 3.5 × 106 µC Gyair -1 cm-2 ), limit of detection (directly measured values down to 1.5 nGyair s-1 ), along with competitive energy and imaging resolution at room temperature. At the same time, lead-free perovskite-inspired materials (e.g., methylammonium bismuth iodide), which have underperformed in solar cells, have recently matched and, in some areas (e.g., in polarization stability), surpassed the performance of LHP detectors. These advances open up opportunities to achieve devices for safer medical imaging, as well as more effective non-invasive analysis for security, nuclear safety, or product inspection applications. Herein, the principles behind the rapid rises in performance of LHP and perovskite-inspired material detectors, and how their properties and performance link with critical applications in non-invasive diagnostics are discussed. The key strategies to engineer the performance of these materials, and the important challenges to overcome to commercialize these new technologies are also discussed.
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Affiliation(s)
| | - Thanh-Hai Le
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Wanyi Nie
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Robert L Z Hoye
- Inorganic Chemistry Laboratory, University of Oxford, Oxford, OX1 3QR, UK
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9
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Guo J, Fu Y, Zheng W, Xie M, Huang Y, Miao Z, Han C, Yin W, Zhang J, Yang X, Tian J, Zhang X. Entropy-Driven Strongly Confined Low-Toxicity Pure-Red Perovskite Quantum Dots for Spectrally Stable Light-Emitting Diodes. NANO LETTERS 2024; 24:417-423. [PMID: 38149580 DOI: 10.1021/acs.nanolett.3c04214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Spectrally stable pure-red perovskite quantum dots (QDs) with low lead content are essential for high-definition displays but are difficult to synthesize due to QD self-purification. Here, we make use of entropy-driven quantum-confined pure-red perovskite QDs to fabricate light-emitting diodes (LEDs) that have low toxicity and are efficient and spectrum-stable. Based on experimental data and first-principles calculations, multiple element alloying results in a 60% reduction in lead content while improving QD entropy to promote crystal stability. Entropy-driven QDs exhibit photoluminescence with 100% quantum yields and single-exponential decay lifetimes without alteration of their morphology or crystal structure. The pure-red LEDs utilizing entropy-driven QDs have spectrally stable electroluminescence, achieving a brightness of 4932 cd/m2, a maximum external quantum efficiency of over 20%, and a 15-fold longer operational lifetime than the CsPbI3 QD-based LEDs. These achievements demonstrate that entropy-driven QDs can mitigate local compositional heterogeneity and ion migration.
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Affiliation(s)
- Jie Guo
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Yuhao Fu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Weijia Zheng
- Department of Chemistry, University of Victoria, Victoria, BC V8P 5C2, Canada
| | - Mingyuan Xie
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Yuchao Huang
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Zeyu Miao
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Ce Han
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Wenxu Yin
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Jiaqi Zhang
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, P.R. China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
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10
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Chai Y, Jiang C, Hu X, Han J, Wang Y, Yang W, Li C, Zeng H, Li X. Homogeneous Bridging Induces Compact and Scalable Perovskite Thick Films for X-Ray Flat-Panel Detectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2305357. [PMID: 37635124 DOI: 10.1002/smll.202305357] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2023] [Revised: 08/15/2023] [Indexed: 08/29/2023]
Abstract
Solution-processed organic-inorganic hybrid perovskite polycrystalline thick films have shown great potential in X-ray detection. However, the preparation of compact perovskite thick films with large area is still challenging due to the limitation of feasible ink formulation and pinholes caused by solvent volatilization. Post-treatment and hot-pressing are usually involved to improve the film quality, which is however unsuitable for subsequent integration. In this work, a homogeneous bridging strategy is developed to prepare compact perovskite films directly. A stable perovskite slurry with suitable viscosity consisting of undissolved grains and supersaturated solution is formed by adding a weak coordination solvent to the pre-synthesized microcrystalline powders. Small perovskite grains in situ grow from the saturated solution during the annealing, filling the pinholes and connecting the surrounding original grains. As a result, large-area perovskite thick film with tight grain arrangement and ultralow current drift is blade-coated to achieve X-ray imaging. The optimal device displays an impressive mobility-lifetime product of 2.2 × 10-3 cm2 V-1 and a champion ratio of sensitivity to the dark current density of 2.23 × 1011 µC Gyair -1 A-1 . This work provides a simple and effective route to prepare high-quality perovskite thick films, which is instructive for the development of perovskite-based X-ray flat-panel detectors.
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Affiliation(s)
- Yingjun Chai
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Chaoyan Jiang
- School of Materials Science and Chemical Engineering, Ningbo University, Ningbo, 315211, China
| | - Xudong Hu
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Jiguang Han
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yao Wang
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Wanqiu Yang
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Chongkang Li
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Xiaoming Li
- MIIT Key Laboratory of Advanced Display Material and Devices, School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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11
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Ma M, Zhang X, Chen X, Xiong H, Xu L, Cheng T, Yuan J, Wei F, Shen B. In situ imaging of the atomic phase transition dynamics in metal halide perovskites. Nat Commun 2023; 14:7142. [PMID: 37932253 PMCID: PMC10628210 DOI: 10.1038/s41467-023-42999-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Accepted: 10/27/2023] [Indexed: 11/08/2023] Open
Abstract
Phase transition dynamics are an important concern in the wide applications of metal halide perovskites, which fundamentally determine the optoelectronic properties and stabilities of perovskite materials and devices. However, a more in-depth understanding of such a phase transition process with real atomic resolution is still limited by the immature low-dose electron microscopy and in situ imaging studies to date. Here, we apply an emergent low-dose imaging technique to identify different phase structures (α, β and γ) in CsPbI3 nanocrystals during an in-situ heating process. The rotation angles of PbI6 octahedrons can be measured in these images to quantitatively describe the thermal-induced phase distribution and phase transition. Then, the dynamics of such a phase transition are studied at a macro time scale by continuously imaging the phase distribution in a single nanocrystal. The structural evolution process of CsPbI3 nanocrystals at the particle level, including the changes in morphology and composition, is also visualized with increasing temperature. These results provide atomic insights into the transition dynamics of perovskite phases, indicating a long-time transition process with obvious intermediate states and spatial distribution that should be generally considered in the further study of structure-property relations and device performance.
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Affiliation(s)
- Mengmeng Ma
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 215123, Suzhou, Jiangsu, PR China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 215123, Suzhou, Jiangsu, PR China
| | - Xuliang Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 215123, Suzhou, Jiangsu, PR China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 215123, Suzhou, Jiangsu, PR China
| | - Xiao Chen
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, 100084, Beijing, PR China
| | - Hao Xiong
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, 100084, Beijing, PR China
| | - Liang Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 215123, Suzhou, Jiangsu, PR China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 215123, Suzhou, Jiangsu, PR China
| | - Tao Cheng
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 215123, Suzhou, Jiangsu, PR China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 215123, Suzhou, Jiangsu, PR China
| | - Jianyu Yuan
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 215123, Suzhou, Jiangsu, PR China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 215123, Suzhou, Jiangsu, PR China
| | - Fei Wei
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, 100084, Beijing, PR China
| | - Boyuan Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 215123, Suzhou, Jiangsu, PR China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 215123, Suzhou, Jiangsu, PR China.
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12
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Liu J, Liu P, Shi T, Ke M, Xiong K, Liu Y, Chen L, Zhang L, Liang X, Li H, Lu S, Lan X, Niu G, Zhang J, Fei P, Gao L, Tang J. Flexible and broadband colloidal quantum dots photodiode array for pixel-level X-ray to near-infrared image fusion. Nat Commun 2023; 14:5352. [PMID: 37660051 PMCID: PMC10475073 DOI: 10.1038/s41467-023-40620-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Accepted: 08/02/2023] [Indexed: 09/04/2023] Open
Abstract
Combining information from multispectral images into a fused image is informative and beneficial for human or machine perception. Currently, multiple photodetectors with different response bands are used, which require complicated algorithms and systems to solve the pixel and position mismatch problem. An ideal solution would be pixel-level multispectral image fusion, which involves multispectral image using the same photodetector and circumventing the mismatch problem. Here we presented the potential of pixel-level multispectral image fusion utilizing colloidal quantum dots photodiode array, with a broadband response range from X-ray to near infrared and excellent tolerance for bending and X-ray irradiation. The colloidal quantum dots photodiode array showed a specific detectivity exceeding 1012 Jones in visible and near infrared range and a favorable volume sensitivity of approximately 2 × 105 μC Gy-1 cm-3 for X-ray irradiation. To showcase the advantages of pixel-level multispectral image fusion, we imaged a capsule enfolding an iron wire and soft plastic, successfully revealing internal information through an X-ray to near infrared fused image.
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Affiliation(s)
- Jing Liu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, 225 Chaoyang New Street, 325105, Wenzhou, P. R. China
| | - Peilin Liu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Tailong Shi
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Mo Ke
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Kao Xiong
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Yuxuan Liu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Long Chen
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Linxiang Zhang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Xinyi Liang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Hao Li
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Shuaicheng Lu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, 225 Chaoyang New Street, 325105, Wenzhou, P. R. China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
| | - Guangda Niu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
| | - Jianbing Zhang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, 225 Chaoyang New Street, 325105, Wenzhou, P. R. China
| | - Peng Fei
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China.
- Optical Valley Laboratory, 430074, Wuhan, P. R. China.
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, 225 Chaoyang New Street, 325105, Wenzhou, P. R. China.
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China.
- Optical Valley Laboratory, 430074, Wuhan, P. R. China.
- National Engineering Research Center for Laser Processing, 1037 Luoyu Road, 430074, Wuhan, P. R. China.
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13
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Chu D, Jia B, Liu N, Zhang Y, Li X, Feng J, Pi J, Yang Z, Zhao G, Liu Y, Liu S(F, Park NG. Lattice engineering for stabilized black FAPbI 3 perovskite single crystals for high-resolution x-ray imaging at the lowest dose. SCIENCE ADVANCES 2023; 9:eadh2255. [PMID: 37647409 PMCID: PMC10468129 DOI: 10.1126/sciadv.adh2255] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/17/2023] [Accepted: 07/29/2023] [Indexed: 09/01/2023]
Abstract
Preliminary theoretical analyses indicate that lattice relaxation may be used to release lattice strain in the FAPbI3 perovskite to warrant both high x-ray detection performance and improved stability. Herein, we demonstrate stable black α-phase FAPbI3 single crystals (SCs) realized by lattice engineering via annealing in the ambient atmosphere. The engineered α-FAPbI3 SC detector shows almost all the best figures of merit including a high sensitivity of 4.15 × 105 μC Gyair-1 cm-2, a low detection limit of 1.1 nGyair s-1, a high resolution of 15.9 lp mm-1, and a short response time of 214 μs. We further demonstrate high-definition x-ray imaging at a dose rate below 10 nGyair s-1 on the FAPbI3 SC, indicating a minimal dose-area product of 0.048 mGyair cm2 to the patient for one-time posteroanterior chest diagnosis, which is more than 3000 times lower than the international reference level of 150 mGyair cm2. In addition, the robust long-term stability enables the FAPbI3 SC x-ray detector to work steadily for more than 40 years.
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Affiliation(s)
- Depeng Chu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
| | - Binxia Jia
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
| | - Naiming Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
| | - Yunxia Zhang
- School of Science, Xi’an University of Posts & Telecommunications, Xi’an 710121, China
| | - Xiaotong Li
- Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125, USA
| | - Jiangshan Feng
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
| | - Jiacheng Pi
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
| | - Zhou Yang
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
| | - Guangtao Zhao
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
| | - Yucheng Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
| | - Shengzhong (Frank) Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Nam-Gyu Park
- School of Chemical Engineering, Center for Antibonding Regulated Crystals, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea
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14
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Geng X, Chen Y, Li Y, Ren J, Dun G, Qin K, Lin Z, Peng J, Tian H, Yang Y, Xie D, Ren T. Lead-Free Halide Perovskites for Direct X-Ray Detectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300256. [PMID: 37232232 PMCID: PMC10427383 DOI: 10.1002/advs.202300256] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Revised: 05/06/2023] [Indexed: 05/27/2023]
Abstract
Lead halide perovskites have made remarkable progress in the field of radiation detection owing to the excellent and unique optoelectronic properties. However, the instability and the toxicity of lead-based perovskites have greatly hindered its practical applications. Alternatively, lead-free perovskites with high stability and environmental friendliness thus have fascinated significant research attention for direct X-ray detection. In this review, the current research progress of X-ray detectors based on lead-free halide perovskites is focused. First, the synthesis methods of lead-free perovskites including single crystals and films are discussed. In addition, the properties of these materials and the detectors, which can provide a better understanding and designing satisfactory devices are also presented. Finally, the challenge and outlook for developing high-performance lead-free perovskite X-ray detectors are also provided.
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Affiliation(s)
- Xiangshun Geng
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Yu‐Ang Chen
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Yuan‐Yuan Li
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Jun Ren
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Guan‐Hua Dun
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Ken Qin
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Zhu Lin
- Beijing National Research Center for Information Science and TechnologyTsinghua UniversityBeijing100084P. R. China
| | - Jiali Peng
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - He Tian
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Yi Yang
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Dan Xie
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
| | - Tian‐Ling Ren
- School of Integrated Circuit & Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua UniversityBeijing100084P. R. China
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15
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Wu J, Zhang X, You S, Zhu ZK, Zhu T, Wang Z, Li R, Guan Q, Liang L, Niu X, Luo J. Low Detection Limit Circularly Polarized Light Detection Realized by Constructing Chiral Perovskite/Si Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302443. [PMID: 37156749 DOI: 10.1002/smll.202302443] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2023] [Revised: 04/22/2023] [Indexed: 05/10/2023]
Abstract
Chiral perovskites have been demonstrated as promising candidates for direct circularly polarized light (CPL) detection due to their intrinsic chirality and excellent charge transport ability. However, chiral perovskite-based CPL detectors with both high distinguishability of left- and right-handed optical signals and low detection limit remain unexplored. Here, a heterostructure, (R-MPA)2 MAPb2 I7 /Si (MPA = methylphenethylamine, MA = methylammonium) is constructed, to achieve high-sensitive and low-limit CPL detection. The heterostructures with high crystalline quality and sharp interface exhibit a strong built-in electric field and a suppressed dark current, not only improving the separation and transport of the photogenerated carriers but also laying a foundation for weak CPL signals detection. Consequently, the heterostructure-based CPL detector obtains a high anisotropy factor up to 0.34 with a remarkably low CPL detection limit of 890 nW cm-2 under the self-driven mode. As a pioneering study, this work paves the way for designing high-sensitive CPL detectors that simultaneously have great distinguishing capability and low detection limit of CPL.
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Affiliation(s)
- Jianbo Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Xinyuan Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Shihai You
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Zeng-Kui Zhu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Tingting Zhu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Ziyang Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Ruiqing Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Qianwen Guan
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Lishan Liang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Xinyi Niu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
- Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, Jiangxi, 330022, P. R. China
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16
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Wu H, Wang Q, Zhang A, Niu G, Nikl M, Ming C, Zhu J, Zhou Z, Sun YY, Nan G, Ren G, Wu Y, Tang J. One-dimensional scintillator film with benign grain boundaries for high-resolution and fast x-ray imaging. SCIENCE ADVANCES 2023; 9:eadh1789. [PMID: 37506201 PMCID: PMC10381942 DOI: 10.1126/sciadv.adh1789] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Accepted: 06/27/2023] [Indexed: 07/30/2023]
Abstract
Fast and high-resolution x-ray imaging demands scintillator films with negligible afterglow, high scintillation yield, and minimized cross-talk. However, grain boundaries (GBs) are abundant in polycrystalline scintillator film, and, for current inorganic scintillators, detrimental dangling bonds at GBs inevitably extend radioluminescence lifetime and increase nonradiative recombination loss, deteriorating afterglow and scintillation yield. Here, we demonstrate that scintillators with one-dimensional (1D) crystal structure, Cs5Cu3Cl6I2 explored here, possess benign GBs without dangling bonds, yielding nearly identical afterglow and scintillation yield for single crystals and polycrystalline films. Because of its 1D crystal structure, Cs5Cu3Cl6I2 films with desired columnar morphology are easily obtained via close space sublimation, exhibit negligible afterglow (0.1% at 10 ms) and high scintillation yield (1.2 times of CsI:Tl). We have also demonstrated fast x-ray imaging with 27 line pairs mm-1 resolution and frame rate up to 33 fps, surpassing most existing scintillators. We believe that the 1D scintillators can greatly boost x-ray imaging performance.
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Affiliation(s)
- Haodi Wu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Qian Wang
- Artificial Crystal Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
| | - Ao Zhang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Guangda Niu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
- Optics Valley Laboratory, Hubei, 430074, China
| | - Martin Nikl
- Department of Optical Materials, Institute of Physics of the Czech Academy of Sciences, Cukrovarnicka 10/112, Prague 16200, Czech Republic
| | - Chen Ming
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
| | - Jinsong Zhu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Zhengyang Zhou
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
| | - Yi-Yang Sun
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
| | - Guangjun Nan
- Department of Physics, Zhejiang Normal University, Jinhua 321004, Zhejiang, China
| | - Guohao Ren
- Artificial Crystal Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
| | - Yuntao Wu
- Artificial Crystal Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
- Optics Valley Laboratory, Hubei, 430074, China
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17
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Zhang L, Mei L, Wang K, Lv Y, Zhang S, Lian Y, Liu X, Ma Z, Xiao G, Liu Q, Zhai S, Zhang S, Liu G, Yuan L, Guo B, Chen Z, Wei K, Liu A, Yue S, Niu G, Pan X, Sun J, Hua Y, Wu WQ, Di D, Zhao B, Tian J, Wang Z, Yang Y, Chu L, Yuan M, Zeng H, Yip HL, Yan K, Xu W, Zhu L, Zhang W, Xing G, Gao F, Ding L. Advances in the Application of Perovskite Materials. NANO-MICRO LETTERS 2023; 15:177. [PMID: 37428261 PMCID: PMC10333173 DOI: 10.1007/s40820-023-01140-3] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 05/29/2023] [Indexed: 07/11/2023]
Abstract
Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.
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Affiliation(s)
- Lixiu Zhang
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Luyao Mei
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China
| | - Kaiyang Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, 518055, People's Republic of China
| | - Yinhua Lv
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Shuai Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Yaxiao Lian
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Xiaoke Liu
- Department of Physics, Linköping University, 58183, Linköping, Sweden
| | - Zhiwei Ma
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Guanjun Xiao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Qiang Liu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China
| | - Shuaibo Zhai
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, People's Republic of China
| | - Shengli Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Gengling Liu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Ligang Yuan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Bingbing Guo
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Ziming Chen
- Department of Chemistry, Imperial College London, London, W12 0BZ, UK
| | - Keyu Wei
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Aqiang Liu
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Shizhong Yue
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Guangda Niu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
| | - Xiyan Pan
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Jie Sun
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yong Hua
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Wu-Qiang Wu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Dawei Di
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Baodan Zhao
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Zhijie Wang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Yang Yang
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Liang Chu
- School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China
| | - Mingjian Yuan
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Haibo Zeng
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Hin-Lap Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, People's Republic of China
| | - Keyou Yan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Wentao Xu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China.
| | - Lu Zhu
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China.
| | - Wenhua Zhang
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China.
| | - Guichuan Xing
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, People's Republic of China.
| | - Feng Gao
- Department of Physics, Linköping University, 58183, Linköping, Sweden.
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
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18
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Falsini N, Ubaldini A, Cicconi F, Rizzo A, Vinattieri A, Bruzzi M. Halide Perovskites Films for Ionizing Radiation Detection: An Overview of Novel Solid-State Devices. SENSORS (BASEL, SWITZERLAND) 2023; 23:4930. [PMID: 37430844 DOI: 10.3390/s23104930] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 05/13/2023] [Accepted: 05/17/2023] [Indexed: 07/12/2023]
Abstract
Halide perovskites are a novel class of semiconductors that have attracted great interest in recent decades due to their peculiar properties of interest for optoelectronics. In fact, their use ranges from the field of sensors and light emitters to ionizing radiation detectors. Since 2015, ionizing radiation detectors exploiting perovskite films as active media have been developed. Recently, it has also been demonstrated that such devices can be suitable for medical and diagnostic applications. This review collects most of the recent and innovative publications regarding solid-state devices for the detection of X-rays, neutrons, and protons based on perovskite thin and thick films in order to show that this type of material can be used to design a new generation of devices and sensors. Thin and thick films of halide perovskites are indeed excellent candidates for low-cost and large-area device applications, where the film morphology allows the implementation on flexible devices, which is a cutting-edge topic in the sensor sector.
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Affiliation(s)
- Naomi Falsini
- Nuclear Safety, Security and Sustainability Division, Fusion and Technology for Nuclear Safety and Security Department, Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Via Martiri di Monte Sole 4, 40129 Bologna, Italy
- Dipartimento di Fisica e Astronomia, Università degli Studi di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy
| | - Alberto Ubaldini
- Nuclear Safety, Security and Sustainability Division, Fusion and Technology for Nuclear Safety and Security Department, Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Via Martiri di Monte Sole 4, 40129 Bologna, Italy
| | - Flavio Cicconi
- Nuclear Safety, Security and Sustainability Division, Fusion and Technology for Nuclear Safety and Security Department, Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Via Martiri di Monte Sole 4, 40129 Bologna, Italy
| | - Antonietta Rizzo
- Nuclear Safety, Security and Sustainability Division, Fusion and Technology for Nuclear Safety and Security Department, Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Via Martiri di Monte Sole 4, 40129 Bologna, Italy
| | - Anna Vinattieri
- Dipartimento di Fisica e Astronomia, Università degli Studi di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy
- Istituto Nazionale di Fisica Nucleare-INFN, Sezione di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy
| | - Mara Bruzzi
- Dipartimento di Fisica e Astronomia, Università degli Studi di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy
- Istituto Nazionale di Fisica Nucleare-INFN, Sezione di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy
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19
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Shabbir B, Yu JC, Warnakula T, Ayyubi RAW, Pollock JA, Hossain MM, Kim JE, Macadam N, Ng LWT, Hasan T, Vak D, Kitchen MJ, Jasieniak JJ. Printable Perovskite Diodes for Broad-Spectrum Multienergy X-Ray Detection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210068. [PMID: 36852617 DOI: 10.1002/adma.202210068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 02/13/2023] [Indexed: 05/19/2023]
Abstract
Multienergy X-ray detection is critical to effectively differentiate materials in a variety of diagnostic radiology and nondestructive testing applications. Silicon and selenium X-ray detectors are the most common for multienergy detection; however, these present poor energy discrimination across the broad X-ray spectrum and exhibit limited spatial resolution due to the high thicknesses required for radiation attenuation. Here, an X-ray detector based on solution-processed thin-film metal halide perovskite that overcomes these challenges is introduced. By harnessing an optimized n-i-p diode configuration, operation is achieved across a broad range of soft and hard X-ray energies stemming from 0.1 to 10's of keV. Through detailed experimental and simulation work, it is shown that optimized Cs0.1 FA0.9 PbI3 perovskites effectively attenuate soft and hard X-rays, while also possessing excellent electrical properties to result in X-ray detectors with high sensitivity factors that exceed 5 × 103 µ C G y Vac - 1 cm - 2 $\mu {\rm{C}}\;{{\bf Gy}}_{{\rm{Vac}}}^{ - 1}\;{\rm{c}}{{\rm{m}}^{ - 2}}$ and 6 × 104 µC Gy-1 cm-2 within soft and hard X-ray regimes, respectively. Harnessing the solution-processable nature of the perovskites, roll-to-roll printable X-ray detectors on flexible substrates are also demonstrated.
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Affiliation(s)
- Babar Shabbir
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria, 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria, 3800, Australia
| | - Jae Choul Yu
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria, 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria, 3800, Australia
| | - Tharindu Warnakula
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria, 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria, 3800, Australia
| | - R A W Ayyubi
- Department of Physics, University of Illinois at Chicago, Chicago, IL, 60607, USA
| | - James A Pollock
- School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia
| | - M Mosarof Hossain
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria, 3800, Australia
- Department of Neuroscience, Central Clinical School, Monash University, Melbourne, Victoria, 3004, Australia
| | - Jueng-Eun Kim
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria, 3800, Australia
- CSIRO Manufacturing, Clayton, Victoria, 3168, Australia
| | - Nasiruddin Macadam
- Cambridge Graphene Centre, University of Cambridge, CB3 0FA, Cambridge, UK
| | - Leonard W T Ng
- Cambridge Graphene Centre, University of Cambridge, CB3 0FA, Cambridge, UK
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Tawfique Hasan
- Cambridge Graphene Centre, University of Cambridge, CB3 0FA, Cambridge, UK
| | - Doojin Vak
- CSIRO Manufacturing, Clayton, Victoria, 3168, Australia
| | - Marcus J Kitchen
- School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia
| | - Jacek J Jasieniak
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria, 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria, 3800, Australia
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20
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Realizing nearly-zero dark current and ultrahigh signal-to-noise ratio perovskite X-ray detector and image array by dark-current-shunting strategy. Nat Commun 2023; 14:626. [PMID: 36746946 PMCID: PMC9902443 DOI: 10.1038/s41467-023-36313-6] [Citation(s) in RCA: 22] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2022] [Accepted: 01/26/2023] [Indexed: 02/08/2023] Open
Abstract
Although perovskite X-ray detectors have revealed promising properties, their dark currents are usually hundreds of times larger than the practical requirements. Here, we report a detector architecture with a unique shunting electrode working as a blanking unit to suppress dark current, and it theoretically can be reduced to zero. We experimentally fabricate the dark-current-shunting X-ray detector, which exhibits a record-low dark current of 51.1 fA at 5 V mm-1, a detection limit of 7.84 nGyair s-1, and a sensitivity of 1.3 × 104 μC Gyair-1 cm-2. The signal-to-noise ratio of our polycrystalline perovskite-based detector is even outperforming many previously reported state-of-the-art single crystal-based X-ray detectors by serval orders of magnitude. Finally, the proof-of-concept X-ray imaging of a 64 × 64 pixels dark-current-shunting detector array is successfully demonstrated. This work provides a device strategy to fundamentally reduce dark current and enhance the signal-to-noise ratio of X-ray detectors and photodetectors in general.
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21
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He X, Deng Y, Ouyang D, Zhang N, Wang J, Murthy AA, Spanopoulos I, Islam SM, Tu Q, Xing G, Li Y, Dravid VP, Zhai T. Recent Development of Halide Perovskite Materials and Devices for Ionizing Radiation Detection. Chem Rev 2023; 123:1207-1261. [PMID: 36728153 DOI: 10.1021/acs.chemrev.2c00404] [Citation(s) in RCA: 25] [Impact Index Per Article: 25.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Abstract
Ionizing radiation such as X-rays and γ-rays has been extensively studied and used in various fields such as medical imaging, radiographic nondestructive testing, nuclear defense, homeland security, and scientific research. Therefore, the detection of such high-energy radiation with high-sensitivity and low-cost-based materials and devices is highly important and desirable. Halide perovskites have emerged as promising candidates for radiation detection due to the large light absorption coefficient, large resistivity, low leakage current, high mobility, and simplicity in synthesis and processing as compared with commercial silicon (Si) and amorphous selenium (a-Se). In this review, we provide an extensive overview of current progress in terms of materials development and corresponding device architectures for radiation detection. We discuss the properties of a plethora of reported compounds involving organic-inorganic hybrid, all-inorganic, all-organic perovskite and antiperovskite structures, as well as the continuous breakthroughs in device architectures, performance, and environmental stability. We focus on the critical advancements of the field in the past few years and we provide valuable insight for the development of next-generation materials and devices for radiation detection and imaging applications.
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Affiliation(s)
- Xiaoyu He
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Yao Deng
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Na Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Jing Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Akshay A Murthy
- Department of Materials Science and Engineering, Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, International Institute for Nanotechnology (IIN), and Department of Mechanical Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Ioannis Spanopoulos
- Department of Chemistry, University of South Florida, Tampa, Florida33620, United States
| | - Saiful M Islam
- Department of Chemistry, Physics, and Atmospheric Sciences, Jackson State University, Jackson, Mississippi39217, United States
| | - Qing Tu
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas77840, United States
| | - Guichuan Xing
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, SAR999078, People's Republic of China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, International Institute for Nanotechnology (IIN), and Department of Mechanical Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
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22
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Hu J, Wang X, Lin L, Xu J, Liu M, Wang R, Li X, Tao L, Sui Y, Song B. High-Performance Self-Powered Photodetector Based on the Lateral Photovoltaic Effect of All-Inorganic Perovskite CsPbBr 3 Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1505-1512. [PMID: 36548398 DOI: 10.1021/acsami.2c16347] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
CsPbBr3, an inorganic halide perovskite, has attracted great interest in recent years due to its excellent photoelectric properties. In this paper, we report a high-performance position-sensitive detector and laser communication sensor based on a CsPbBr3/4H-SiC heterojunction that effectively exploits the lateral photovoltaic (LPV) effect. The X-ray diffraction, X-ray photoelectron spectra, and photoluminescence data indicate that a high-quality CsPbBr3 film has been successfully obtained using pulsed laser deposition. The thickness of the CsPbBr3 film is shown to play a key role in the open-circuit voltage and linear LPV. A large position sensitivity (up to 827 mV/mm) of the LPV with a fast relaxation time is observed. Moreover, the shortest relaxation time of only 0.34 μs for 532 nm laser irradiation among counterparts is achieved in the detector under consideration. Furthermore, the position sensitivity and relaxation time of the LPV in the CsPbBr3/4H-SiC heterojunction show a weak dependence on the laser wavelength from 266 to 532 nm. The robust characteristics of fast relaxation time and high position sensitivity of the LPV make the CsPbBr3 junction a promising candidate for both laser communication sensors and self-powered high-performance position-sensitive detectors.
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Affiliation(s)
- Junbei Hu
- School of Physics, Harbin Institute of Technology, Harbin150001, China
| | - Xianjie Wang
- School of Physics, Harbin Institute of Technology, Harbin150001, China
| | - Lei Lin
- School of Physics, Harbin Institute of Technology, Harbin150001, China
| | - Jie Xu
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin150001, China
| | - Mengting Liu
- School of Physics, Harbin Institute of Technology, Harbin150001, China
| | - Ran Wang
- School of Physics, Harbin Institute of Technology, Harbin150001, China
| | - Xiaofeng Li
- School of Physics, Harbin Institute of Technology, Harbin150001, China
| | - Lingling Tao
- School of Physics, Harbin Institute of Technology, Harbin150001, China
| | - Yu Sui
- School of Physics, Harbin Institute of Technology, Harbin150001, China
| | - Bo Song
- School of Physics, Harbin Institute of Technology, Harbin150001, China
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin150001, China
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23
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Xiao Y, Xue C, Wang X, Liu Y, Yang Z, Liu S. Bulk Heterostructure BA 2PbI 4/MAPbI 3 Perovskites for Suppressed Ion Migration To Achieve Sensitive X-ray Detection Performance. ACS APPLIED MATERIALS & INTERFACES 2022; 14:54867-54875. [PMID: 36449273 DOI: 10.1021/acsami.2c17715] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Three-dimensional (3D) lead-halide perovskites with outstanding mobility-lifetime products and large attenuation coefficients for X-ray photons have demonstrated highly sensitive X-ray detection. However, there exists severe ion migration, especially under electrical bias, that results in dark-current drift and poorer device stability. Theoretical analyses suggest that 3D perovskites with two-dimensional (2D) perovskites may mitigate ion migration and reduce the dark current to achieve a drastically lower detection limit, which is badly needed for X-ray diagnostics. A bulk 2D/3D perovskite heterostructure is therefore designed and prepared by hot-pressing a mixture of BA2PbI4 and MAPbI3 particles. Compared with the pure MAPbI3 pellet, the bulk 2D/3D heterostructure pellet shows much higher resistivity, hence, significantly reduced ion migration and a much smaller dark-current drift of 4.84 × 10-5 nA cm-1 s-1 V-1, which is much lower than that of the pristine MAPbI3 pellet, thus demonstrating its effectiveness for the suppression of ion migration. The bulk 2D/3D heterostructure pellet attains an X-ray sensitivity of 2.0 × 103 μC Gyair-1 cm-2 as well as a lower detection limit of 111.76 nGy s-1 under 10 V bias. This work provides a successful strategy to prepare X-ray detectors with suppressed ion migration and negligible dark current drift, which will further benefit the development of lead-halide perovskite X-ray detectors.
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Affiliation(s)
- Yingrui Xiao
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an710119, China
| | - Chengzhi Xue
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an710119, China
| | - Xi Wang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an710119, China
| | - Yucheng Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an710119, China
| | - Zhou Yang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an710119, China
| | - Shengzhong Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an710119, China
- Dalian National Laboratory for Clean Energy; Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian116023, China
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24
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Wu Y, Feng J, Yang Z, Liu Y, Liu S(F. Halide Perovskite: A Promising Candidate for Next-Generation X-Ray Detectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 10:e2205536. [PMID: 36453564 PMCID: PMC9811474 DOI: 10.1002/advs.202205536] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/23/2022] [Revised: 10/30/2022] [Indexed: 05/31/2023]
Abstract
In the past decade, metal halide perovskite (HP) has become a superstar semiconductor material due to its great application potential in the photovoltaic and photoelectric fields. In fact, HP initially attracted worldwide attention because of its excellent photovoltaic efficiency. However, HP and its derivatives also show great promise in X-ray detection due to their strong X-ray absorption, high bulk resistivity, suitable optical bandgap, and compatibility with integrated circuits. In this review, the basic working principles and modes of both the direct-type and the indirect-type X-ray detectors are first summarized before discussing the applicability of HP for these two types of detection based on the pros and cons of different perovskites. Furthermore, the authors expand their view to different preparation methods developed for HP including single crystals and polycrystalline materials. Upon systematically analyzing their potential for X-ray detection and photoelectronic characteristics on the basis of different structures and dimensions (0D, 2D, and 3D), recent progress of HPs (mainly polycrystalline) applied to flexible X-ray detection are reviewed, and their practicability and feasibility are discussed. Finally, by reviewing the current research on HP-based X-ray detection, the challenges in this field are identified, and the main directions and prospects of future research are suggested.
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Affiliation(s)
- Ya Wu
- College of Chemistry and Chemical EngineeringXi'an Shiyou UniversityXi'an710065China
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119China
| | - Jiangshan Feng
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119China
| | - Zhou Yang
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119China
| | - Yucheng Liu
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119China
| | - Shengzhong (Frank) Liu
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119China
- State Key Laboratory of CatalysisDalian National Laboratory for Clean EnergyDalian Institute of Chemical PhysicsChinese Academy of SciencesDalian116023China
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25
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Zhao S, Du X, Pang J, Wu H, Song Z, Zheng Z, Xu L, Tang J, Niu G. Dark current modeling of thick perovskite X-ray detectors. FRONTIERS OF OPTOELECTRONICS 2022; 15:43. [PMID: 36637550 PMCID: PMC9756221 DOI: 10.1007/s12200-022-00044-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Accepted: 07/17/2022] [Indexed: 06/17/2023]
Abstract
Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as 10-9 A/cm2 for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (JT) and the generation-recombination current (Jg-r). The typical observed failures of p-n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors.
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Affiliation(s)
- Shan Zhao
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xinyuan Du
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jincong Pang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Haodi Wu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zihao Song
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zhiping Zheng
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
- Optical Valley Laboratory, Wuhan, 430074, China
| | - Ling Xu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
- Optical Valley Laboratory, Wuhan, 430074, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
- Optical Valley Laboratory, Wuhan, 430074, China
| | - Guangda Niu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.
- Optical Valley Laboratory, Wuhan, 430074, China.
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26
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Xie H, Pan Q, Wu D, Qin F, Chen S, Sun W, Yang X, Chen S, Wu T, Chi J, Huang Z, Wang H, Zhang Z, Chen B, Carmeliet J, Su M, Song Y. Lateral Heterostructured Vis-NIR Photodetectors with Multimodal Detection for Rapid and Precise Classification of Glioma. ACS NANO 2022; 16:16563-16573. [PMID: 36201316 DOI: 10.1021/acsnano.2c06004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Precise diagnosis of the boundary and grade of tumors is especially important for surgical dissection. Recently, visible and near-infrared (Vis-NIR) absorption differences of tumors are demonstrated for a precise tumor diagnosis. Here, a template-assisted sequential printing strategy is investigated to construct lateral heterostructured Vis-NIR photodetectors, relying on the up-conversion nanoparticles (UCNPs)/perovskite arrays. Under the sequential printing process, the synergistic effect and co-confinement are demonstrated to induce the UCNPs to cover both sides of the perovskite microwire. The side-wrapped lateral heterogeneous UCNPs/perovskite structure exhibits more satisfactory responsiveness to Vis-NIR light than the common fully wrapped structure, due to sufficient visible-light-harvesting ability. The Vis-NIR photodetectors with R reaching 150 mA W-1 at 980 nm and 1084 A W-1 at 450 nm are employed for the rapid classification of glioma. The detection accuracy rate of 99.3% is achieved through a multimodal analysis covering the Vis-NIR light, which provides a reliable basis for glioma grade diagnosis. This work provides a concrete example for the application of photodetectors in tumor detection and surgical diagnosis.
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Affiliation(s)
- Hongfei Xie
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS)Beijing100190, China
- University of Chinese Academy of Sciences, Beijing100049, China
| | - Qi Pan
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS)Beijing100190, China
| | - Dongdong Wu
- Department of Neurosurgery, The First Medical Centre, Chinese PLA General Hospital, Beijing100853, China
- Medical School of Chinese PLA Hospital, Beijing100853, China
| | - Feifei Qin
- Department of Mechanical and Process Engineering, Swiss Federal Institute of Technology in Zürich (ETH Zürich), Zürich8092, Switzerland
| | - Shuoran Chen
- Research Center for Green Printing Nanophotonic Materials, Suzhou University of Science and Technology, Suzhou, 215009, China
| | - Wei Sun
- Institute of Software, Chinese Academy of Sciences, Beijing100049, China
| | - Xu Yang
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS)Beijing100190, China
- University of Chinese Academy of Sciences, Beijing100049, China
| | - Sisi Chen
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS)Beijing100190, China
- University of Chinese Academy of Sciences, Beijing100049, China
| | - Tingqing Wu
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS)Beijing100190, China
- University of Chinese Academy of Sciences, Beijing100049, China
| | - Jimei Chi
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS)Beijing100190, China
- University of Chinese Academy of Sciences, Beijing100049, China
| | - Zengqi Huang
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS)Beijing100190, China
| | - Huadong Wang
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS)Beijing100190, China
- University of Chinese Academy of Sciences, Beijing100049, China
| | - Zeying Zhang
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS)Beijing100190, China
- University of Chinese Academy of Sciences, Beijing100049, China
| | - Bingda Chen
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS)Beijing100190, China
- University of Chinese Academy of Sciences, Beijing100049, China
| | - Jan Carmeliet
- Department of Mechanical and Process Engineering, Swiss Federal Institute of Technology in Zürich (ETH Zürich), Zürich8092, Switzerland
| | - Meng Su
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS)Beijing100190, China
- University of Chinese Academy of Sciences, Beijing100049, China
| | - Yanlin Song
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS)Beijing100190, China
- University of Chinese Academy of Sciences, Beijing100049, China
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27
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Liu X, Li H, Cui Q, Wang S, Ma C, Li N, Bu N, Yang T, Song X, Liu Y, Yang Z, Zhao K, Liu S(F. Molecular Doping of Flexible Lead‐Free Perovskite‐Polymer Thick Membranes for High‐Performance X‐Ray Detection. Angew Chem Int Ed Engl 2022; 61:e202209320. [DOI: 10.1002/anie.202209320] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2022] [Indexed: 11/09/2022]
Affiliation(s)
- Xinmei Liu
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Haojin Li
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Qingyue Cui
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
- Dalian National Laboratory for Clean Energy iChEM Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 P. R. China
- Department of Chemical Physics Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) University of Science and Technology of China (USTC) Hefei 230026 P. R. China
| | - Shumei Wang
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Chuang Ma
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Nan Li
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Nuo Bu
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Tinghuan Yang
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Xin Song
- Solar and Photovoltaic Engineering Research Center (SPERC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Saudi Arabia
| | - Yucheng Liu
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Zhou Yang
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Kui Zhao
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Shengzhong (Frank) Liu
- Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
- Dalian National Laboratory for Clean Energy iChEM Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 P. R. China
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28
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Ni Z, Xu S, Jiao H, Gu H, Fei C, Huang J. High grain boundary recombination velocity in polycrystalline metal halide perovskites. SCIENCE ADVANCES 2022; 8:eabq8345. [PMID: 36070394 PMCID: PMC9451161 DOI: 10.1126/sciadv.abq8345] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Accepted: 07/21/2022] [Indexed: 05/25/2023]
Abstract
Understanding carrier recombination processes in metal halide perovskites is fundamentally important to further improving the efficiency of perovskite solar cells, yet the accurate recombination velocity at grain boundaries (GBs) has not been determined. Here, we report the determination of carrier recombination velocities at GBs (SGB) of polycrystalline perovskites by mapping the transient photoluminescence pattern change induced by the nonradiative recombination of carriers at GBs. Charge recombination at GBs is revealed to be even stronger than at surfaces of unpassivated films, with average SGB reaching 2200 to 3300 cm/s. Regular surface treatments do not passivate GBs because of the absence of contact at GBs. We find a surface treatment using tributyl(methyl)phosphonium dimethyl phosphate that can penetrate into GBs by partially dissolving GBs and converting it into one-dimensional perovskites. It reduces the average SGB by four times, with the lowest SGB of 410 cm/s, which is comparable to surface recombination velocities after passivation.
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Affiliation(s)
- Zhenyi Ni
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USA
| | - Shuang Xu
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USA
| | - Haoyang Jiao
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USA
| | - Hangyu Gu
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USA
| | - Chengbin Fei
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USA
| | - Jinsong Huang
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USA
- Department of Chemistry, University of North Carolina, Chapel Hill, NC 27599, USA
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29
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Liu X, Li H, Cui Q, Wang S, Ma C, Li N, Bu N, Yang T, Song X, Liu Y, Yang Z, Zhao K, Liu S(F. Molecular Doping of Flexible Lead‐Free Perovskite‐Polymer Thick Membranes for High‐Performance X‐Ray Detection. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202209320] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Xinmei Liu
- Shaanxi Normal University School of Materials Science and Engineering No. 620, West Chang'an Street, Xi'an City, Shaanxi Province CHINA
| | - Haojin Li
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Qingyue Cui
- University of Science and Technology of China School of Chemistry and Materials CHINA
| | - Shumei Wang
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Chuang Ma
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Nan Li
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Nuo Bu
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Tinghuan Yang
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Xin Song
- King Abdullah University of Science and Technology Division of Physical Sciences and Engineering SAUDI ARABIA
| | - Yucheng Liu
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Zhou Yang
- Shaanxi Normal University School of Materials Science and Engineering CHINA
| | - Kui Zhao
- Shaanxi Normal University Materials Science and Engineering No. 620, West Chang'an Avenue, Chang'an District 710000 Xi'an CHINA
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30
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Li Z, Peng G, Chen H, Shi C, Li Z, Jin Z. Metal‐Free PAZE‐NH4X3·H2O Perovskite for Flexible Transparent X‐ray Detection and Imaging. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202207198] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Zhizai Li
- Lanzhou University Structure Design, MoE & National & Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Lanzhou University, Lanzhou 730000, China Lanzhou Tianshui South Road No. 222, Lanzhou, Ganshu Province, China, 730000 730000 Lanzhou CHINA
| | - Guoqiang Peng
- Lanzhou University Structure Design, MoE & National & Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Lanzhou University, Lanzhou 730000, China Lanzhou Tianshui South Road No. 222, Lanzhou, Ganshu Province, China, 730000 730000 Lanzhou CHINA
| | - Huanyu Chen
- Lanzhou University Structure Design, MoE & National & Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Lanzhou University, Lanzhou 730000, China Lanzhou Tianshui South Road No. 222, Lanzhou, Ganshu Province, China, 730000 730000 Lanzhou CHINA
| | - Chang Shi
- Lanzhou University Structure Design, MoE & National & Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Lanzhou University, Lanzhou 730000, China Lanzhou Tianshui South Road No. 222, Lanzhou, Ganshu Province, China, 730000 730000 Lanzhou CHINA
| | - Zhenhua Li
- Lanzhou University Structure Design, MoE & National & Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Lanzhou University, Lanzhou 730000, China Lanzhou Tianshui South Road No. 222, Lanzhou, Ganshu Province, China, 730000 730000 Lanzhou CHINA
| | - Zhiwen Jin
- Lanzhou University School of Physical Science and Technology Lanzhou University, Lanzhou 730000, P. R. China. Lanzhou CHINA
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31
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Li Z, Peng G, Chen H, Shi C, Li Z, Jin Z. Metal-Free PAZE-NH 4 X 3 ⋅H 2 O Perovskite for Flexible Transparent X-ray Detection and Imaging. Angew Chem Int Ed Engl 2022; 61:e202207198. [PMID: 35726524 DOI: 10.1002/anie.202207198] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Indexed: 11/11/2022]
Abstract
Metal-free perovskites are of interest for their chemical diversity and eco-friendly properties, and recently have been used for X-ray detection with superior carrier behavior. However, the size and shape complexity of the organic components results in difficulties in evaluating their stability in high-energy radiation. Herein, we introduce multiple hydrogen-bond metal-free PAZE-NH4 X3 ⋅H2 O perovskite, where H2 O leads to more hydrogen bonds appearing between organic molecules and the perovskite host. As suggested by the theoretical calculations, multiple hydrogen bonds promote stiffness of the lattice, and increase the diffusion barrier to inhibit ionic migration. Then, low trap density, high μτ products and structural flexibility of PAZE-NH4 Br3 ⋅H2 O give a flexible X-ray detector with the highest sensitivity of 3708 μC Gyair -1 cm-2 , ultra-low detection limit of 0.19 μGyair -1 s-1 and superior spatial resolution of 5.0 lp mm-1 .
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Affiliation(s)
- Zhizai Li
- School of Physical Science and Technology & College of Chemistry and Chemical Engineering & Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China
| | - Guoqiang Peng
- School of Physical Science and Technology & College of Chemistry and Chemical Engineering & Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China
| | - Huanyu Chen
- School of Physical Science and Technology & College of Chemistry and Chemical Engineering & Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China
| | - Chang Shi
- School of Physical Science and Technology & College of Chemistry and Chemical Engineering & Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China
| | - ZhenHua Li
- School of Physical Science and Technology & Lanzhou Center for Theoretical Physics & Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, China
| | - Zhiwen Jin
- School of Physical Science and Technology & College of Chemistry and Chemical Engineering & Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China
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Defect Healing of MAPbI3 Perovskite Single Crystal Surface by Benzylamine. Symmetry (Basel) 2022. [DOI: 10.3390/sym14061099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022] Open
Abstract
Controlling the surface traps in metal halide perovskites (MHPs) is essential for device performance, stability, and commercialization. Here, a facile approach is introduced to passivate the methylammonium lead iodide (MAPbI3) perovskite single crystal (PSC) surface defects by benzylamine (BA) ligand treatment, and the natural crystallographic (100) facets surface of PSC is chosen as the research platform to provide a deeper understanding of the passivation process. The confocal photoluminescence (PL) results show that the pristine three-dimensional (3D) MAPbI3 PSC surface with a symmetric emission spectrum is normally converted to a pure two-dimensional (2D) BA2PbI4, and also forms a quasi-2D Ruddlesden–Popper perovskite (RPP) BA2MAn−1PbnI3n+1 (n = 2, 3, 4, … ∞) after BA exchange with cation defects. The blue shift in the PL peak, as well as the extended exciton lifetimes of time-resolved photoluminescence (TRPL), indicate the realization of surface defect passivation. Additionally, changes in surface morphology are also investigated. The reaction starts with the formation of small, layered crystallites over the surface; as time elapses, the layered crystallites spread and merge in contact with each other, eventually resulting in smooth features. Our findings present a simple approach for MAPbI3 PSC surface defect passivation, which aims to advance MHP optimization processes toward practical perovskite device applications.
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Ghosh J, Sellin PJ, Giri PK. Recent advances in lead-free double perovskites for x-ray and photodetection. NANOTECHNOLOGY 2022; 33:312001. [PMID: 35443239 DOI: 10.1088/1361-6528/ac6884] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Accepted: 04/19/2022] [Indexed: 06/14/2023]
Abstract
Over the last decade, lead halide perovskites have attracted significant research attention in the field of photovoltaics, light-emitting devices, photodetection, ionizing radiation detection, etc, owing to their outstanding optoelectrical properties. However, the commercial applications of lead-based perovskite devices are restricted due to the poor ambient stability and toxicity of lead. The encapsulation of lead-based devices can reduce the possible leakage of lead. However, it is hard to ensure safety during large-scale production and long-term storage. Recently, considerable efforts have been made to design lead-free perovskites for different optoelectronic applications. Metal halide double perovskites with the general formula of A2MIMIIIX6or A2MIVX6could be potentially considered as green and stable alternatives for different optoelectronic applications. In this review article, we focus on the recent progress and findings on lead-free halide double perovskites for x-ray and UV-vis photodetection applications. Lead-free halide double perovskite has recently drawn a great deal of attention for superior x-ray detection due to its high absorption coefficient, large carrier mobility-lifetime product, and large bulk resistance. In addition, these materials exhibit good performance in photodetection in the UV-vis region due to high photocarrier generation and efficient carrier separation. In this review, first, we define the characteristics of lead-free double perovskite materials. The fundamental characteristics and beneficial properties of halide perovskites for direct and indirect x-ray detection are then discussed. We comprehensively review recent developments and efforts on lead-free double perovskite for x-ray detection and UV-vis photodetection. We bring out the current challenges and opportunities in the field and finally present the future outlook for developing lead-free double perovskite-based x-ray and UV-vis photodetectors for practical applications.
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Affiliation(s)
- Joydip Ghosh
- Department of Physics, University of Surrey, Guildford, Surrey, United Kingdom
| | - P J Sellin
- Department of Physics, University of Surrey, Guildford, Surrey, United Kingdom
| | - P K Giri
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039, India
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati-781039, India
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Pang J, Zhao S, Du X, Wu H, Niu G, Tang J. Vertical matrix perovskite X-ray detector for effective multi-energy discrimination. LIGHT, SCIENCE & APPLICATIONS 2022; 11:105. [PMID: 35449122 PMCID: PMC9023493 DOI: 10.1038/s41377-022-00791-y] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2021] [Revised: 03/29/2022] [Accepted: 04/05/2022] [Indexed: 05/12/2023]
Abstract
Multi-energy X-ray detection is sought after for a wide range of applications including medical imaging, security checking and industrial flaw inspection. Perovskite X-ray detectors are superior in terms of high sensitivity and low detection limit, which lays a foundation for multi-energy discrimination. However, the extended capability of the perovskite detector for multi-energy X-ray detection is challenging and has never been reported. Herein we report the design of vertical matrix perovskite X-ray detectors for multi-energy detection, based on the attenuation behavior of X-ray within the detector and machine learning algorithm. This platform is independent of the complex X-ray source components that constrain the energy discrimination capability. We show that the incident X-ray spectra could be accurately reconstructed from the conversion matrix and measured photocurrent response. Moreover, the detector could produce a set of images containing the density-graded information under single exposure, and locate the concealed position for all low-, medium- and high-density substances. Our findings suggest a new generation of X-ray detectors with features of multi-energy discrimination, density differentiation, and contrast-enhanced imaging.
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Affiliation(s)
- Jincong Pang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Shan Zhao
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Xinyuan Du
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Haodi Wu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Guangda Niu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China.
- Optical Valley Laboratory, 430074, Wuhan, China.
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
- Optical Valley Laboratory, 430074, Wuhan, China
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Wu MC, Wang QH, Hsiao KC, Chen SH, Ho CM, Jao MH, Chang YH, Su WF. Composition Engineering to Enhance the Photovoltaic Performance and to Prolong the Lifetime for Silver Bismuth Iodide Solar Cell. CHEMICAL ENGINEERING JOURNAL ADVANCES 2022. [DOI: 10.1016/j.ceja.2022.100275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022] Open
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