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Lyu P, Wang Z, Guo N, Su J, Li J, Qi D, Xi S, Lin H, Zhang Q, Pennycook SJ, Chen J, Zhao X, Zhang C, Loh KP, Lu J. Air-Stable Wafer-Scale Ferromagnetic Metallo-Carbon Nitride Monolayer. J Am Chem Soc 2024. [PMID: 39021150 DOI: 10.1021/jacs.4c02160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/20/2024]
Abstract
The pursuit of robust, long-range magnetic ordering in two-dimensional (2D) materials holds immense promise for driving technological advances. However, achieving this goal remains a grand challenge due to enhanced quantum and thermal fluctuations as well as chemical instability in the 2D limit. While magnetic ordering has been realized in atomically thin flakes of transition metal chalcogenides and metal halides, these materials often suffer from air instability. In contrast, 2D carbon-based materials are stable enough, yet the challenge lies in creating a high density of local magnetic moments and controlling their long-range magnetic ordering. Here, we report a novel wafer-scale synthesis of an air-stable metallo-carbon nitride monolayer (MCN, denoted as MN4/CNx), featuring ultradense single magnetic atoms and exhibiting robust room-temperature ferromagnetism. Under low-pressure chemical vapor deposition conditions, thermal dehydrogenation and polymerization of metal phthalocyanine (MPc) on copper foil at elevated temperature generate a substantial number of nitrogen coordination sites for anchoring magnetic single atoms in monolayer MN4/CNx (where M = Fe, Co, and Ni). The incorporation of densely populating MN4 sites into monolayer MCN networks leads to robust ferromagnetism up to room temperature, enabling the observation of anomalous Hall effects with excellent chemical stability. Detailed electronic structure calculations indicate that the presence of high-density metal sites results in the emergence of spin-split d-bands near the Fermi level, causing a favorable long-range ferromagnetic exchange coupling through direct exchange interactions. Our work demonstrates a novel synthesis approach for wafer-scale MCN monolayers with robust room-temperature ferromagnetism and may shed light on practical electronic and spintronic applications.
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Affiliation(s)
- Pin Lyu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- State Key Laboratory of Mechanics and Control of Mechanical Structures and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Ziying Wang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Na Guo
- Chongqing Research Institute, National University of Singapore, Chongqing 401123, China
- Department of Physics, Department of Physics and Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Jie Su
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Jing Li
- Key Laboratory of Bio-inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University, Beijing 100191, China
| | - Dongchen Qi
- Centre for Materials Science, School of Chemistry and Physics, Queensland University of Technology, Brisbane, Queensland 4001, Australia
| | - Shibo Xi
- Institute of Chemical and Engineering Sciences, Singapore, 627833, Singapore
| | - Huihui Lin
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Qihan Zhang
- Department of Materials Science & Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Stephen J Pennycook
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
- Department of Materials Science & Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Jingsheng Chen
- Department of Materials Science & Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Chun Zhang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Chongqing Research Institute, National University of Singapore, Chongqing 401123, China
- Department of Physics, Department of Physics and Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Jiong Lu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
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Shi T, Yao Y, Hong Y, Li Y, Lu S, Qin W, Wu X. Scrolling reduced graphene oxides to induce room temperature magnetism via spatial coupling of defects. MATERIALS HORIZONS 2023; 10:4344-4353. [PMID: 37439252 DOI: 10.1039/d3mh00734k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/14/2023]
Abstract
Due to its intriguing features and numerous applications, graphene has garnered a lot of interest in recent years. However, it is still very difficult to create graphene-based room-temperature magnets without transition metals or rare earth elements since pristine graphene is inherently diamagnetic due to the delocalized π bonding network. Herein, room-temperature ferromagnetism with a saturation magnetization of 0.93 emu g-1 (300 K) is achieved in defect-rich-reduced graphene oxide (DR-rGO) nanoscrolls by creating a spatial coupling of defects. The experiments and DFT calculations verify that spatial coupling of defects could enhance Rudermann-Kittel-Kasuya-Yosida interactions to induce magnetism in graphene. It displays high-efficiency electromagnetic wave absorption performance with a minimal reflection loss of -62.1 dB and an effective absorption bandwidth of 7.8 GHz (3.0 mm) thanks to greatly improved magnetism. This breakthrough serves as a building block for the creation of room-temperature magnetic carbon materials and expands their applications in many pertinent domains.
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Affiliation(s)
- Ting Shi
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China.
| | - Yuan Yao
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China.
| | - Yang Hong
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China.
| | - Yang Li
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China.
| | - Songtao Lu
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China.
| | - Wei Qin
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China
| | - Xiaohong Wu
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China.
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Yang S, Chen W, Sa B, Guo Z, Zheng J, Pei J, Zhan H. Strain-Dependent Band Splitting and Spin-Flip Dynamics in Monolayer WS 2. NANO LETTERS 2023; 23:3070-3077. [PMID: 36995751 DOI: 10.1021/acs.nanolett.3c00771] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Triggered by the expanding demands of semiconductor devices, strain engineering of two-dimensional transition metal dichalcogenides (TMDs) has garnered considerable research interest. Through steady-state measurements, strain has been proved in terms of its modulation of electronic energy bands and optoelectronic properties in TMDs. However, the influence of strain on the spin-orbit coupling as well as its related valley excitonic dynamics remains elusive. Here, we demonstrate the effect of strain on the excitonic dynamics of monolayer WS2 via steady-state fluorescence and transient absorption spectroscopy. Combined with theoretical calculations, we found that tensile strain can reduce the spin-splitting value of the conduction band and lead to transitions between different exciton states via spin-flip mechanism. Our findings suggest that the spin-flip process is strain-dependent, provides a reference for application of valleytronic devices, where tensile strain is usually existing during their design and fabrication.
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Affiliation(s)
- Shichao Yang
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Wenwei Chen
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Baisheng Sa
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Zhiyong Guo
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Jingying Zheng
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Jiajie Pei
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Hongbing Zhan
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovatation Laboratory for Optoelectronic Information, Fuzhou 350108, Fujian, Peoples Republic of China
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Yang J, Gao B, Liu W, Du J, Xu Q. Supercritical CO 2 -induced New Chemical Bond of C-O-Si in Graphdiyne to Achieve Robust Room-Temperature Ferromagnetism. Chemphyschem 2023; 24:e202200793. [PMID: 36806422 DOI: 10.1002/cphc.202200793] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2022] [Revised: 02/09/2023] [Accepted: 02/13/2023] [Indexed: 02/21/2023]
Abstract
The realization of ferromagnetic ordering of two-dimensional (2D) carbon material graphdiyne (GDY) has attracted great attention due to its promising application in spin semiconductor devices. However, the absence of localized spins makes the pristine GDY intrinsically nonferromagnetic. Herein, we report the realization of robust room-temperature (RT) ferromagnetism (FM) with Curie temperature (TC ) up to 325 K for GDY Nanosheets (GDYNs) by supercritical CO2 (SC CO2 ). Experimental and theoretical calculations reveal that the new chemical bond of C-O-Si can be formed because of the unique effect of SC CO2 , which help to enhance the charge transfer and generates long-range ferromagnetic order. The RT saturation magnetization (MS ) reaches 1.125 emu/g, which is much higher than that of carbon-based materials reported up to now. Meanwhile, by changing the conditions of SC CO2 such as pressure, ferromagnetic responses can be manipulated, which is great for potential spintronics applications of GDY.
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Affiliation(s)
- Jian Yang
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Bo Gao
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Wei Liu
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Jiang Du
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Qun Xu
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450052, P. R. China.,College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
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Liu Y, Guo Y, Wu C, Xie Y. Spin-Dependent Transport at 2D Solids: From Nonmagnetic Layers to Ferromagnetic van der Waals Structures. J Phys Chem Lett 2021; 12:9730-9740. [PMID: 34590853 DOI: 10.1021/acs.jpclett.1c02047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Spintronics is a promising alternative to the conventional silicon transistor-based electronics that are gradually approaching their physical limitations. Ultrathin two-dimensional van der Waals (vdW) materials (2D materials) with controllable spin degrees of freedom are recognized as extremely promising spintronic materials in architectures for the post-Moore era. In this Perspective, we review recent progress on spin-dependent transport behaviors (SDTBs) confined at the 2D scale, which are the mainstream paradigms for spintronic devices. We first present the mechanism and the key factors of SDTBs in 2D nonmagnetic materials-based hybrid devices. Then, some chemical modulation strategies for inducing short-range magnetic order and magneto-electric performance into 2D nonmagnetic materials are discussed. Furthermore, we concentrate on introducing intriguing SDTBs in 2D long-range ferromagnetic materials-based vdW devices. Finally, we highlight the current challenges in the study of spin-dependent transport of 2D modified materials and 2D material-based spintronic devices, in the hope of accelerating their applications.
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Affiliation(s)
- Yang Liu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei 230026, P.R. China
| | - Yuqiao Guo
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei 230026, P.R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230031, P.R. China
| | - Changzheng Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei 230026, P.R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230031, P.R. China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei 230026, P.R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230031, P.R. China
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