1
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Guo D, Fu Q, Zhang G, Cui Y, Liu K, Zhang X, Yu Y, Zhao W, Zheng T, Long H, Zeng P, Han X, Zhou J, Xin K, Gu T, Wang W, Zhang Q, Hu Z, Zhang J, Chen Q, Wei Z, Zhao B, Lu J, Ni Z. Composition Modulation-Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400060. [PMID: 39126132 DOI: 10.1002/adma.202400060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 07/22/2024] [Indexed: 08/12/2024]
Abstract
Band alignment engineering is crucial for facilitating charge separation and transfer in optoelectronic devices, which ultimately dictates the behavior of Van der Waals heterostructures (vdWH)-based photodetectors and light emitting diode (LEDs). However, the impact of the band offset in vdWHs on important figures of merit in optoelectronic devices has not yet been systematically analyzed. Herein, the regulation of band alignment in WSe2/Bi2Te3- xSex vdWHs (0 ≤ x ≤ 3) is demonstrated through the implementation of chemical vapor deposition (CVD). A combination of experimental and theoretical results proved that the synthesized vdWHs can be gradually tuned from Type I (WSe2/Bi2Te3) to Type III (WSe2/Bi2Se3). As the band alignment changes from Type I to Type III, a remarkable responsivity of 58.12 A W-1 and detectivity of 2.91×1012 Jones (in Type I) decrease in the vdWHs-based photodetector, and the ultrafast photoresponse time is 3.2 µs (in Type III). Additionally, Type III vdWH-based LEDs exhibit the highest luminance and electroluminescence (EL) external quantum efficiencies (EQE) among p-n diodes based on Transition Metal Dichalcogenides (TMDs) at room temperature, which is attributed to band alignment-induced distinct interfacial charge injection. This work serves as a valuable reference for the application and expansion of fundamental band alignment principles in the design and fabrication of future optoelectronic devices.
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Affiliation(s)
- Dingli Guo
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
- Institute of Semiconductors and State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qiang Fu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Guitao Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Yueying Cui
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Kaiyang Liu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Xinlei Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Yali Yu
- Institute of Semiconductors and State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, 100083, China
| | - Weiwei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Ting Zheng
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Haoran Long
- Institute of Semiconductors and State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, 100083, China
| | - Peiyu Zeng
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Xu Han
- Advanced Research Institute for Multidisciplinary Sciences, Beijing Institute of Technology, Beijing, 100081, China
| | - Jun Zhou
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Kaiyao Xin
- Institute of Semiconductors and State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, 100083, China
| | - Tiancheng Gu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Wenhui Wang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Qi Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Zhenliang Hu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Jialin Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Qian Chen
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Zhongming Wei
- Institute of Semiconductors and State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, 100083, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Junpeng Lu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
- School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Zhenhua Ni
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
- School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
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2
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Wu Z, Chen M, Liu X, Peng J, Yao J, Xue J, Zheng Z, Dong H, Li J. Sandwiched WS 2/MoTe 2/WS 2 Heterostructure with a Completely Depleted Interlayer for a Photodetector with Outstanding Detectivity. ACS APPLIED MATERIALS & INTERFACES 2024; 16:36609-36619. [PMID: 38949990 DOI: 10.1021/acsami.4c06712] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/03/2024]
Abstract
Photodetectors based on two-dimensional van der Waals (2D vdW) heterostructures with high detectivity and rapid response have emerged as promising candidates for next-generation imaging applications. However, the practical application of currently studied 2D vdW heterostructures faces challenges related to insufficient light absorption and inadequate separation of photocarriers. To address these challenges, we present a sandwiched WS2/MoTe2/WS2 heterostructure with a completely depleted interlayer, integrated on a mirror electrode, for a highly efficient photodetector. This well-designed structure enhances light-matter interactions while facilitating effective separation and rapid collection of photocarriers. The resulting photodetector exhibits a broadband photoresponse spanning from deep ultraviolet to near-infrared wavelengths. When operated in self-powered mode, the device demonstrates an exceptional response speed of 22/34 μs, along with an impressive detectivity of 8.27 × 1010 Jones under 635 nm illumination. Additionally, by applying a bias voltage of -1 V, the detectivity can be further increased to 1.49 × 1012 Jones, while still maintaining a rapid response speed of 180/190 μs. Leveraging these outstanding performance metrics, high-resolution visible-near-infrared light imaging has been successfully demonstrated using this device. Our findings provide valuable insights into the optimization of device architecture for diverse photoelectric applications.
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Affiliation(s)
- Ziqiao Wu
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Meifei Chen
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong 510006, P. R. China
| | - Xinyue Liu
- Guangdong Provincial Key Laboratory of Nanophotonic Manipulation, Institute of Nanophotonics, Jinan University, Guangzhou 511443, P. R. China
| | - Junhao Peng
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275, P. R. China
| | - Jiancai Xue
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong 510006, P. R. China
| | - Huafeng Dong
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, P. R. China
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3
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Zhang H, Fu J, Carvalho A, Poh ET, Chung JY, Feng M, Chen Y, Wang B, Shang Q, Yang H, Zhang Z, Lim SX, Gao W, Gradečak S, Qiu CW, Lu J, He C, Sum TC, Sow CH. Programmable Interfacial Band Configuration in WS 2/Bi 2O 2Se Heterojunctions. ACS NANO 2024; 18:16832-16841. [PMID: 38888500 DOI: 10.1021/acsnano.4c02496] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
van der Waals heterojunctions based on transition-metal dichalcogenides (TMDs) offer advanced strategies for manipulating light-emitting and light-harvesting behaviors. A crucial factor determining the light-material interaction is in the band alignment at the heterojunction interface, particularly the distinctions between type-I and type-II alignments. However, altering the band alignment from one type to another without changing the constituent materials is exceptionally difficult. Here, utilizing Bi2O2Se with a thickness-dependent band gap as a bottom layer, we present an innovative strategy for engineering interfacial band configurations in WS2/Bi2O2Se heterojunctions. In particular, we achieve tuning of the band alignment from type-I (Bi2O2Se straddling WS2) to type-II and finally to type-I (WS2 straddling Bi2O2Se) by increasing the thickness of the Bi2O2Se bottom layer from monolayer to multilayer. We verified this band architecture conversion using steady-state and transient spectroscopy as well as density functional theory calculations. Using this material combination, we further design a sophisticated band architecture incorporating both type-I (WS2 straddles Bi2O2Se, fluorescence-quenched) and type-I (Bi2SeO5 straddles WS2, fluorescence-recovered) alignments in one sample through focused laser beam (FLB). By programming the FLB trajectory, we achieve a predesigned localized fluorescence micropattern on WS2 without changing its intrinsic atomic structure. This effective band architecture design strategy represents a significant leap forward in harnessing the potential of TMD heterojunctions for multifunctional photonic applications.
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Affiliation(s)
- Hanwen Zhang
- Joint School of the National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Jianhui Fu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Alexandra Carvalho
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore
| | - Eng Tuan Poh
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Jing-Yang Chung
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- Applied Materials─NUS Advanced Materials Corporate Lab, Singapore 117608, Singapore
| | - Minjun Feng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Yinzhu Chen
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Bo Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Qiuyu Shang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Hengxing Yang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Zheng Zhang
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, 2 Fusionopolis Way, Innovis, Singapore 138634, Singapore
| | - Sharon Xiaodai Lim
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Silvija Gradečak
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- Applied Materials─NUS Advanced Materials Corporate Lab, Singapore 117608, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Junpeng Lu
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Chunnian He
- Joint School of the National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Tianjin University, Tianjin 300350, People's Republic of China
| | - Tze Chien Sum
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Chorng Haur Sow
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
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4
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Wu Y, Wang Y, Bao D, Deng X, Zhang S, Yu-Chun L, Ke S, Liu J, Liu Y, Wang Z, Ham P, Hanna A, Pan J, Hu X, Li Z, Zhou J, Wang C. Emerging probing perspective of two-dimensional materials physics: terahertz emission spectroscopy. LIGHT, SCIENCE & APPLICATIONS 2024; 13:146. [PMID: 38951490 PMCID: PMC11217405 DOI: 10.1038/s41377-024-01486-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2023] [Revised: 04/09/2024] [Accepted: 05/15/2024] [Indexed: 07/03/2024]
Abstract
Terahertz (THz) emission spectroscopy (TES) has emerged as a highly effective and versatile technique for investigating the photoelectric properties of diverse materials and nonlinear physical processes in the past few decades. Concurrently, research on two-dimensional (2D) materials has experienced substantial growth due to their atomically thin structures, exceptional mechanical and optoelectronic properties, and the potential for applications in flexible electronics, sensing, and nanoelectronics. Specifically, these materials offer advantages such as tunable bandgap, high carrier mobility, wideband optical absorption, and relatively short carrier lifetime. By applying TES to investigate the 2D materials, their interfaces and heterostructures, rich information about the interplay among photons, charges, phonons and spins can be unfolded, which provides fundamental understanding for future applications. Thus it is timely to review the nonlinear processes underlying THz emission in 2D materials including optical rectification, photon-drag, high-order harmonic generation and spin-to-charge conversion, showcasing the rich diversity of the TES employed to unravel the complex nature of these materials. Typical applications based on THz emissions, such as THz lasers, ultrafast imaging and biosensors, are also discussed. Step further, we analyzed the unique advantages of spintronic terahertz emitters and the future technological advancements in the development of new THz generation mechanisms leading to advanced THz sources characterized by wide bandwidth, high power and integration, suitable for industrial and commercial applications. The continuous advancement and integration of TES with the study of 2D materials and heterostructures promise to revolutionize research in different areas, including basic materials physics, novel optoelectronic devices, and chips for post-Moore's era.
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Affiliation(s)
- Yifei Wu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Yuqi Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Di Bao
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xiaonan Deng
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Simian Zhang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Lin Yu-Chun
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Shengxian Ke
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Jianing Liu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Yingjie Liu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zeli Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Pingren Ham
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Andrew Hanna
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Jiaming Pan
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xinyue Hu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zhengcao Li
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Ji Zhou
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Chen Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China.
- Beijing Advanced Innovation Center for Integrated Circuits, 100084, Beijing, China.
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5
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Zhu Y, Feng B, Su Y, Li G, Liu Y, Hou Y, Zhang J, Li W, Zhong G, Yang C, Chen M. Strong Covalent Coupling in Vertically Layered SnSe 2/PTAA Heterojunctions Enabled High Performance Inorganic-Organic Hybrid Photodetectors. NANO LETTERS 2024; 24:6778-6787. [PMID: 38767965 DOI: 10.1021/acs.nanolett.4c01515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Controllable large-scale integration of two-dimensional (2D) materials with organic semiconductors and the realization of strong coupling between them still remain challenging. Herein, we demonstrate a wafer-scale, vertically layered SnSe2/PTAA heterojunction array with high light-trapping ability via a low-temperature molecular beam epitaxy method and a facile spin-coating process. Conductive probe atomic force microscopy (CP-AFM) measurements reveal strong rectification and photoresponse behavior in the individual SnSe2 nanosheet/PTAA heterojunction. Theoretical analysis demonstrates that vertically layered SnSe2/PTAA heterojunctions exhibit stronger C-Se covalent coupling than that of the conventional tiled type, which could facilitate more efficient charge transfer. Benefiting from these advantages, the SnSe2/PTAA heterojunction photodetectors with an optimized PTAA concentration show high performance, including a responsivity of 41.02 A/W, an external quantum efficiency of 1.31 × 104%, and high uniformity. The proposed approach for constructing large-scale 2D inorganic-organic heterostructures represents an effective route to fabricate high-performance broadband photodetectors for integrated optoelectronic systems.
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Affiliation(s)
- Yuanhao Zhu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Bohan Feng
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Yuhan Su
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Guangyuan Li
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yingming Liu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yuxin Hou
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Jie Zhang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wenjie Li
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Guohua Zhong
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Chunlei Yang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ming Chen
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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6
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Zhou H, Li D, Ren Z, Xu C, Wang LF, Lee C. Surface plasmons-phonons for mid-infrared hyperspectral imaging. SCIENCE ADVANCES 2024; 10:eado3179. [PMID: 38809968 PMCID: PMC11135386 DOI: 10.1126/sciadv.ado3179] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2024] [Accepted: 04/23/2024] [Indexed: 05/31/2024]
Abstract
Surface plasmons have proven their ability to boost the sensitivity of mid-infrared hyperspectral imaging by enhancing light-matter interactions. Surface phonons, a counterpart technology to plasmons, present unclear contributions to hyperspectral imaging. Here, we investigate this by developing a plasmon-phonon hyperspectral imaging system that uses asymmetric cross-shaped nanoantennas composed of stacked plasmon-phonon materials. The phonon modes within this system, controlled by light polarization, capture molecular refractive index intensity and lineshape features, distinct from those observed with plasmons, enabling more precise and sensitive molecule identification. In a deep learning-assisted imaging demonstration of severe acute respiratory syndrome coronavirus (SARS-CoV), phonons exhibit enhanced identification capabilities (230,400 spectra/s), facilitating the de-overlapping and observation of the spatial distribution of two mixed SARS-CoV spike proteins. In addition, the plasmon-phonon system demonstrates increased identification accuracy (93%), heightened sensitivity, and enhanced detection limits (down to molecule monolayers). These findings extend phonon polaritonics to hyperspectral imaging, promising applications in imaging-guided molecule screening and pharmaceutical analysis.
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Affiliation(s)
- Hong Zhou
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117583, Singapore
| | - Dongxiao Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117583, Singapore
| | - Zhihao Ren
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117583, Singapore
| | - Cheng Xu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117583, Singapore
| | - Lin-Fa Wang
- Programme in Emerging Infectious Diseases, Duke-NUS Medical School, Singapore, Singapore
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117583, Singapore
- NUS Suzhou Research Institute (NUSRI), Suzhou, Jiangsu 215123, China
- NUS Graduate School–Integrative Sciences and Engineering Programme (ISEP), National University of Singapore, Singapore 119077, Singapore
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7
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Wang Z, Fu S, Zhang W, Liang B, Liu TJ, Hambsch M, Pöhls JF, Wu Y, Zhang J, Lan T, Li X, Qi H, Polozij M, Mannsfeld SCB, Kaiser U, Bonn M, Weitz RT, Heine T, Parkin SSP, Wang HI, Dong R, Feng X. A Cu 3BHT-Graphene van der Waals Heterostructure with Strong Interlayer Coupling for Highly Efficient Photoinduced Charge Separation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311454. [PMID: 38381920 DOI: 10.1002/adma.202311454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 02/09/2024] [Indexed: 02/23/2024]
Abstract
Two-dimensional van der Waals heterostructures (2D vdWhs) are of significant interest due to their intriguing physical properties critically defined by the constituent monolayers and their interlayer coupling. Synthetic access to 2D vdWhs based on chemically tunable monolayer organic 2D materials remains challenging. Herein, the fabrication of a novel organic-inorganic bilayer vdWh by combining π-conjugated 2D coordination polymer (2DCP, i.e., Cu3BHT, BHT = benzenehexathiol) with graphene is reported. Monolayer Cu3BHT with detectable µm2-scale uniformity and atomic flatness is synthesized using on-water surface chemistry. A combination of diffraction and imaging techniques enables the determination of the crystal structure of monolayer Cu3BHT with atomic precision. Leveraging the strong interlayer coupling, Cu3BHT-graphene vdWh exhibits highly efficient photoinduced interlayer charge separation with a net electron transfer efficiency of up to 34% from Cu3BHT to graphene, superior to those of reported bilayer 2D vdWhs and molecular-graphene vdWhs. This study unveils the potential for developing novel 2DCP-based vdWhs with intriguing physical properties.
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Affiliation(s)
- Zhiyong Wang
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
| | - Shuai Fu
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Department of Molecular Spectroscopy, Max Planck Institute for Polymer Research, 55128, Mainz, Germany
| | - Wenjie Zhang
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Baokun Liang
- Central Facility for Electron Microscopy, Electron Microscopy of Materials Science, Ulm University, 89081, Ulm, Germany
| | - Tsai-Jung Liu
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
| | - Mike Hambsch
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universität Dresden, 01069, Dresden, Germany
| | - Jonas F Pöhls
- First Institute of Physics, Georg August University of Göttingen, 37077, Göttingen, Germany
| | - Yufeng Wu
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Jianjun Zhang
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
| | - Tianshu Lan
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Xiaodong Li
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
| | - Haoyuan Qi
- Central Facility for Electron Microscopy, Electron Microscopy of Materials Science, Ulm University, 89081, Ulm, Germany
| | - Miroslav Polozij
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Resource Ecology, 04318, Leipzig, Germany
| | - Stefan C B Mannsfeld
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Electrical and Computer Engineering, Technische Universität Dresden, 01069, Dresden, Germany
| | - Ute Kaiser
- Central Facility for Electron Microscopy, Electron Microscopy of Materials Science, Ulm University, 89081, Ulm, Germany
| | - Mischa Bonn
- Department of Molecular Spectroscopy, Max Planck Institute for Polymer Research, 55128, Mainz, Germany
| | - R Thomas Weitz
- First Institute of Physics, Georg August University of Göttingen, 37077, Göttingen, Germany
| | - Thomas Heine
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Resource Ecology, 04318, Leipzig, Germany
- Department of Chemistry, Yonsei University, 120-749, Seoul, Republic of Korea
| | - Stuart S P Parkin
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Hai I Wang
- Department of Molecular Spectroscopy, Max Planck Institute for Polymer Research, 55128, Mainz, Germany
- Nanophotonics, Debye Institute for Nanomaterials Science, Utrecht University, Utrecht, 3584 CC, the Netherlands
| | - Renhao Dong
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
- Key Laboratory of Colloid and Interface Chemistry of the Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan, 250199, China
| | - Xinliang Feng
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062, Dresden, Germany
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8
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Dang LY, Wei Z, Guo J, Cui TH, Wang Y, Han JC, Wang GG. Efficient Carrier Transport in 2D Bi 2O 2Se/CsBi 3I 10 Perovskite Heterojunction Enables Highly-Sensitive Broadband Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306600. [PMID: 38009782 DOI: 10.1002/smll.202306600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Revised: 10/20/2023] [Indexed: 11/29/2023]
Abstract
2D Bi2O2Se has recently garnered significant attention in the electronics and optoelectronics fields due to its remarkable photosensitivity, broad spectral absorption, and excellent long-term environmental stability. However, the development of integrated Bi2O2Se photodetector with high performance and low-power consumption is limited by material synthesis method and the inherent high carrier concentration of Bi2O2Se. Here, a type-I heterojunction is presented, comprising 2D Bi2O2Se and lead-free bismuth perovskite CsBi3I10, for fast response and broadband detection. Through effective charge transfer and strong coupling effect at the interfaces of Bi2O2Se and CsBi3I10, the response time is accelerated to 4.1 µs, and the detection range is expanded from ultraviolet to near-infrared spectral regions (365-1500 nm). The as-fabricated photodetector exhibits a responsivity of 48.63 AW-1 and a detectivity of 1.22×1012 Jones at 808 nm. Moreover, efficient modulation of the dominant photocurrent generation mechanism from photoconductive to photogating effect leads to sensitive response exceeding 103 AW-1 for heterojunction-based photo field effect transistor (photo-FETs). Utilizing the large-scale growth of both Bi2O2Se and CsBi3I10, the as-fabricated integrated photodetector array demonstrates outstanding homogeneity and stability of photo-response performance. The proposed 2D Bi2O2Se/CsBi3I10 perovskite heterojunction holds promising prospects for the future-generation photodetector arrays and integrated optoelectronic systems.
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Affiliation(s)
- Le-Yang Dang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
| | - Zhan Wei
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
| | - Jing Guo
- Shenzhen International Graduate School and Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen, 518055, China
| | - Tian-Hao Cui
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
| | - Yongjie Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
| | - Jie-Cai Han
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, P. R. China
| | - Gui-Gen Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, P. R. China
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9
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Wang F, Zhu S, Chen W, Han J, Duan R, Wang C, Dai M, Sun F, Jin Y, Wang QJ. Multidimensional detection enabled by twisted black arsenic-phosphorus homojunctions. NATURE NANOTECHNOLOGY 2024; 19:455-462. [PMID: 38225358 DOI: 10.1038/s41565-023-01593-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 12/12/2023] [Indexed: 01/17/2024]
Abstract
A light field carrying multidimensional optical information, including but not limited to polarization, intensity and wavelength, is essential for numerous applications such as environmental monitoring, thermal imaging, medical diagnosis and free-space communications. Simultaneous acquisition of this multidimensional information could provide comprehensive insights for understanding complex environments but remains a challenge. Here we demonstrate a multidimensional optical information detection device based on zero-bias double twisted black arsenic-phosphorus homojunctions, where the photoresponse is dominated by the photothermoelectric effect. By using a bipolar and phase-offset polarization photoresponse, the device operated in the mid-infrared range can simultaneously detect both the polarization angle and incident intensity information through direct measurement of the photocurrents in the double twisted black arsenic-phosphorus homojunctions. The device's responsivity makes it possible to retrieve wavelength information, typically perceived as difficult to obtain. Moreover, the device exhibits an electrically tunable polarization photoresponse, enabling precise distinction of polarization angles under low-intensity light exposure. These demonstrations offer a promising approach for simultaneous detection of multidimensional optical information, indicating potential for diverse photonic applications.
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Affiliation(s)
- Fakun Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Song Zhu
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Wenduo Chen
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Jiayue Han
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Chongwu Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Mingjin Dai
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Fangyuan Sun
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Yuhao Jin
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Qi Jie Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
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10
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Zhang Q, Xiong Y, Gao Y, Chen J, Hu W, Yang J. First-Principles High-Throughput Inverse Design of Direct Momentum-Matching Band Alignment van der Waals Heterostructures Utilizing Two-Dimensional Indirect Semiconductors. NANO LETTERS 2024; 24:3710-3718. [PMID: 38484178 DOI: 10.1021/acs.nanolett.4c00042] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted widespread attention in photocatalysis. Herein, we employ a novel strategy utilizing first-principles high-throughput inverse design of 2D Z-scheme heterojunctions for photocatalysis. This approach is anchored in high-throughput screening conditions, which are fundamentally based on the characteristics of carrier mechanisms influenced significantly by Z-scheme heterojunctions. A pivotal element of our screening process is the integration of the indirect-to-direct bandgap transition with momentum-matching band alignment in k-space, guiding us to combine two 2D indirect bandgap monolayers into direct Z-scheme heterojunctions characterized by pronounced interlayer excitons. Various stacking modes introduce extra and distinct degrees of freedom that can be useful for tuning the properties of heterostructures, encompassing factors such as components, stacking patterns, and sequences. We demonstrate that various stacking modes can facilitate the indirect-to-direct bandgap transition and the emergence of interlayer excitons. These findings provide exciting opportunities for designing Z-scheme heterojunctions in photocatalysis.
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Affiliation(s)
- Qian Zhang
- Hefei National Research Center for Physical Sciences at the Microscale, and Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Yuanfan Xiong
- Hefei National Research Center for Physical Sciences at the Microscale, and Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Yunzhi Gao
- Hefei National Research Center for Physical Sciences at the Microscale, and Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jiajia Chen
- Hefei National Research Center for Physical Sciences at the Microscale, and Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Wei Hu
- Hefei National Research Center for Physical Sciences at the Microscale, and Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jinlong Yang
- Key Laboratory of Precision and Intelligent Chemistry, and Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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11
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Kim J, Lee J, Lee JM, Facchetti A, Marks TJ, Park SK. Recent Advances in Low-Dimensional Nanomaterials for Photodetectors. SMALL METHODS 2024; 8:e2300246. [PMID: 37203281 DOI: 10.1002/smtd.202300246] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/21/2023] [Indexed: 05/20/2023]
Abstract
New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.
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Affiliation(s)
- Jaehyun Kim
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Junho Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Jong-Min Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Sung Kyu Park
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
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12
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Liang Z, Wang M, Zhang X, Li Z, Du K, Yang J, Lei SY, Qiao G, Ou JZ, Liu G. A 2D-0D-2D Sandwich Heterostructure toward High-Performance Room-Temperature Gas Sensing. ACS NANO 2024; 18:3669-3680. [PMID: 38241472 DOI: 10.1021/acsnano.3c11475] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
The construction of two-dimensional (2D) van der Waals (vdW) heterostructures over black phosphorus (BP) has been attracting significant attention to better utilize its inherent properties. The sandwich of zero-dimensional (0D) noble metals within BP-based vdW heterostructures can provide efficient catalytic channels, modulating their surface redox potentials and therefore inducing versatile functionalities. Herein, we realize a 2D WS2-Au-BP heterostructure, in which Au nanoparticles are connected between BP and WS2 via ionic bonds. The ultralow conduction band minimum position, the reduced adsorption energies of O2, and the increased dissociation barrier energy of O2- into 2O contribute greatly to improving the long-term stability of BP in the air. The formation of heterostructures can reduce the potential barrier energy in target gas molecules, thus enhancing the absorption energy and charge transfer. Taking the paramagnetic NO2 gas molecules as a representative, a stable response magnitude of 2.11 to 100 ppb NO2 is achieved for 80 days, which is far larger than the initial responses of most BP-based materials. A practical gas sensing system is also developed to demonstrate its real-world implementation. This work provides a promising demonstration of 0D noble metal within 2D BP-based vdW heterostructure for simultaneously improving the long-term stability and room-temperature reversible gas sensing.
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Affiliation(s)
- Zhiping Liang
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Mingyuan Wang
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electrical Science and Engineering, Southeast University, Nanjing 210096, China
| | - Xiangzhao Zhang
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Zhong Li
- Key Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Kaixiang Du
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Jian Yang
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Shuang-Ying Lei
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electrical Science and Engineering, Southeast University, Nanjing 210096, China
| | - Guanjun Qiao
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
| | - Jian Zhen Ou
- Key Laboratory of Advanced Technologies of Materials Ministry of Education School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
- School of Engineering, RMIT University, Melbourne 3000, Australia
| | - Guiwu Liu
- School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
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13
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Wu B, Zhang Z, Chen B, Zheng Z, You C, Liu C, Li X, Wang J, Wang Y, Song E, Cui J, An Z, Huang G, Mei Y. One-step rolling fabrication of VO 2 tubular bolometers with polarization-sensitive and omnidirectional detection. SCIENCE ADVANCES 2023; 9:eadi7805. [PMID: 37851806 PMCID: PMC10584336 DOI: 10.1126/sciadv.adi7805] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2023] [Accepted: 09/15/2023] [Indexed: 10/20/2023]
Abstract
Uncooled infrared detection based on vanadium dioxide (VO2) radiometer is highly demanded in temperature monitoring and security protection. The key to its breakthrough is to fabricate bolometer arrays with great absorbance and excellent thermal insulation using a straightforward procedure. Here, we show a tubular bolometer by one-step rolling VO2 nanomembranes with enhanced infrared detection. The tubular geometry enhances the thermal insulation, light absorption, and temperature sensitivity of freestanding VO2 nanomembranes. This tubular VO2 bolometer exhibits a detectivity of ~2 × 108 cm Hz1/2 W-1 in the ultrabroad infrared spectrum, a response time of ~2.0 ms, and a calculated noise-equivalent temperature difference of 64.5 mK. Furthermore, our device presents a workable structural paradigm for polarization-sensitive and omnidirectional light coupling bolometers. The demonstrated overall characteristics suggest that tubular bolometers have the potential to narrow performance and cost gap between photon detectors and thermal detectors with low cost and broad applications.
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Affiliation(s)
- Binmin Wu
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Ziyu Zhang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Bingxin Chen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan University, Shanghai 200438, People’s Republic of China
| | - Zhi Zheng
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Chunyu You
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Chang Liu
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Xing Li
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Jinlong Wang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Yunqi Wang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Enming Song
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China
| | - Jizhai Cui
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Zhenghua An
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan University, Shanghai 200438, People’s Republic of China
| | - Gaoshan Huang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
| | - Yongfeng Mei
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200438, People’s Republic of China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, People’s Republic of China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai 200438, People’s Republic of China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China
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14
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Aly MA, Enakerakpor EO, Koch M, Masenda H. Tuning Interlayer Exciton Emission with TMD Alloys in van der Waals Heterobilayers of Mo 0.5W 0.5Se 2 and Its Binary Counterparts. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2769. [PMID: 37887920 PMCID: PMC10609229 DOI: 10.3390/nano13202769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2023] [Revised: 10/12/2023] [Accepted: 10/14/2023] [Indexed: 10/28/2023]
Abstract
Semiconductor heterostructures have been the backbone of developments in electronic and optoelectronic devices. One class of structures of interest is the so-called type II band alignment, in which optically excited electrons and holes relax into different material layers. The unique properties observed in two-dimensional transition metal dichalcogenides and the possibility to engineer van der Waals heterostructures make them candidates for future high-tech devices. In these structures, electronic, optical, and magnetic properties can be tuned through the interlayer coupling, thereby opening avenues for developing new functional materials. We report the possibility of explicitly tuning the emission of interlayer exciton energies in the binary-ternary heterobilayer of Mo0.5W0.5Se2 with MoSe2 and WSe2. The respective interlayer energies of 1.516 eV and 1.490 eV were observed from low-temperature photoluminescence measurements for the MoSe2- and WSe2- based heterostructures, respectively. These interlayer emission energies are above those reported for MoSe2/WSe2 (≃1.30-1.45 eV). Consequently, binary-ternary heterostructure systems offer an extended energy range and tailored emission energies not accessible with the binary counterparts. Moreover, even though Mo0.5W0.5Se2 and MoSe2 have almost similar optical gaps, their band offsets are different, resulting in charge transfer between the monolayers following the optical excitation. Thus, confirming TMDs alloys can be used to tune the band-offsets, which adds another design parameter for application-specific optoelectronic devices.
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Affiliation(s)
- Mohammed Adel Aly
- Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, 35032 Marburg, Germany
- Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566, Egypt
| | | | - Martin Koch
- Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, 35032 Marburg, Germany
| | - Hilary Masenda
- Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, 35032 Marburg, Germany
- School of Physics, University of the Witwatersrand, Johannesburg 2050, South Africa
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15
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Zeng L, Han W, Ren X, Li X, Wu D, Liu S, Wang H, Lau SP, Tsang YH, Shan CX, Jie J. Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe 2 Dirac Semimetal. NANO LETTERS 2023; 23:8241-8248. [PMID: 37594857 DOI: 10.1021/acs.nanolett.3c02396] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/20/2023]
Abstract
Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) photoresponses are compliant with these requirements. However, challenges remain in scalable growth and substrate-dependence for on-chip integration. Here, we demonstrate the inch-level 2D palladium ditelluride (PdTe2) Dirac semimetal using a low-temperature self-stitched epitaxy (SSE) approach. The low formation energy between two precursors facilitates low-temperature multiple-point nucleation (∼300 °C), growing up, and merging, resulting in self-stitching of PdTe2 domains into a continuous film, which is highly compatible with back-end-of-line (BEOL) technology. The uncooled on-chip PdTe2/Si Schottky junction-based photodetector exhibits an ultrabroadband photoresponse of up to 10.6 μm with a large specific detectivity. Furthermore, the highly integrated device array demonstrates high-resolution room-temperature imaging capability, and the device can serve as an optical data receiver for IR optical communication. This study paves the way toward low-temperature growth of 2D semimetals for uncooled MIR sensing.
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Affiliation(s)
- Longhui Zeng
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, United States
| | - Wei Han
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei 430205, P. R. China
| | - Xiaoyan Ren
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education Zhengzhou University, Zhengzhou, Henan 450052, P. R. China
| | - Xue Li
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education Zhengzhou University, Zhengzhou, Henan 450052, P. R. China
| | - Di Wu
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education Zhengzhou University, Zhengzhou, Henan 450052, P. R. China
| | - Shujuan Liu
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei 430205, P. R. China
| | - Hao Wang
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei 430205, P. R. China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom Kowloon, Hong Kong 999077, P. R. China
| | - Yuen Hong Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom Kowloon, Hong Kong 999077, P. R. China
| | - Chong-Xin Shan
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education Zhengzhou University, Zhengzhou, Henan 450052, P. R. China
| | - Jiansheng Jie
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa 999078, Macau, China
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16
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Zhang Y, Zhu T, Zhang N, Li Y, Li X, Yan M, Tang Y, Zhang J, Jiang M, Xu H. Air-Stable Violet Phosphorus/MoS 2 van der Waals Heterostructure for High-Responsivity and Gate-Tunable Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301463. [PMID: 37086108 DOI: 10.1002/smll.202301463] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/17/2023] [Revised: 03/09/2023] [Indexed: 05/03/2023]
Abstract
Violet phosphorus (VP), a newly emerging elemental 2D semiconductor, with attractive properties such as tunable bandgap, high carrier mobility, and unusual structural anisotropy, offers significant opportunities for designing high-performance electronic and optoelectronic devices. However, the study on fundamental property and device application of 2D VP is seriously hindered by its inherent instability in ambient air. Here, a VP/MoS2 van der Waals heterostructure is constructed by vertically staking few-layer VP and MoS2 , aiming to utilize the synergistic effect of the two materials to achieve a high-performance 2D photodetector. The strong optical absorption of VP combining with the type-II band alignment of VP/MoS2 heterostructure make VP play a prominent photogating effect. As a result, the VP/MoS2 heterostructure photodetector achieves an excellent photoresponse performances with ultrahigh responsivity of 3.82 × 105 A W-1 , high specific detectivity of 9.17 × 1013 Jones, large external quantum efficiency of 8.91 × 107 %, and gate tunability, which are much superior to that of individual MoS2 device or VP device. Moreover, the VP/MoS2 heterostructure photodetector indicates superior air stability due to the effective protection of VP by MoS2 encapsulation. This work sheds light on the future study of the fundamental property and optoelectronic device application of VP.
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Affiliation(s)
- Yao Zhang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an, 710069, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Tao Zhu
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an, 710069, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Nannan Zhang
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Yubin Li
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Minglu Yan
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an, 710069, P. R. China
| | - Yue Tang
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Jinying Zhang
- State Key Laboratory of Electrical Insulation and Power Equipment Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Man Jiang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an, 710069, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
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17
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Chen Z, Huang J, Yang M, Liu X, Zheng Z, Huo N, Han L, Luo D, Li J, Gao W. Bi 2O 2Se Nanowire/MoSe 2 Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37335909 DOI: 10.1021/acsami.3c05283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2023]
Abstract
In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area and mechanical flexibility of 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, optical switches, etc. Herein, 1D Bi2O2Se nanowires have been successfully synthesized via chemical vapor deposition. Impressively, the strongest Raman vibration modes can be achieved along the short edge (y-axis) of Bi2O2Se nanowires with high crystalline quality, which originate from Se and Bi vacancies. Moreover, the Bi2O2Se/MoSe2 photodiode designed with type-II band alignment demonstrates a high rectification ratio of 103. Intuitively, the photocurrent peaks are mainly distributed in the overlapped region under the self-powered mode and reverse bias, within the wavelength range of 400-nm. The resulting device exhibits excellent optoelectrical performances, including high responsivities (R) and fast response speed of 656 mA/W and 350/380 μs (zero bias) and 17.17 A/W and 100/110 μs (-1 V) under 635 nm illumination, surpassing the majority of reported mixed-dimensional photodiodes. The most significant feature of our photodiode is its highest photocurrent anisotropic ratio of ∼2.2 (-0.8 V) along the long side (x-axis) of Bi2O2Se nanowires under 635 nm illumination. The above results reveal a robust and distinctive correlation between structural defects and polarized orientation for 1D Bi2O2Se nanowires. Furthermore, 1D Bi2O2Se nanowires appear to be a great potential candidate for high-performance rectifiers, polarization-sensitive photodiodes, and phototransistors based on mixed vdWs heterostructures.
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Affiliation(s)
- Zecheng Chen
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Jianming Huang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Xiao Liu
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Lixiang Han
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Dongxiang Luo
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
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18
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Dong Z, Hua Q, Xi J, Shi Y, Huang T, Dai X, Niu J, Wang B, Wang ZL, Hu W. Ultrafast and Low-Power 2D Bi 2O 2Se Memristors for Neuromorphic Computing Applications. NANO LETTERS 2023; 23:3842-3850. [PMID: 37093653 DOI: 10.1021/acs.nanolett.3c00322] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Memristors that emulate synaptic plasticity are building blocks for opening a new era of energy-efficient neuromorphic computing architecture, which will overcome the limitation of the von Neumann bottleneck. Layered two-dimensional (2D) Bi2O2Se, as an emerging material for next-generation electronics, is of great significance in improving the efficiency and performance of memristive devices. Herein, high-quality Bi2O2Se nanosheets are grown by configuring mica substrates face-down on the Bi2O2Se powder. Then, bipolar Bi2O2Se memristors are fabricated with excellent performance including ultrafast switching speed (<5 ns) and low-power consumption (<3.02 pJ). Moreover, synaptic plasticity, such as long-term potentiation/depression (LTP/LTD), paired-pulse facilitation (PPF), and spike-timing-dependent plasticity (STDP), are demonstrated in the Bi2O2Se memristor. Furthermore, MNIST recognition with simulated artificial neural networks (ANN) based on conductance modification could reach a high accuracy of 91%. Notably, the 2D Bi2O2Se enables the memristor to possess ultrafast and low-power attributes, showing great potential in neuromorphic computing applications.
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Affiliation(s)
- Zilong Dong
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qilin Hua
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Jianguo Xi
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
| | - Yuanhong Shi
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tianci Huang
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinhuan Dai
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianan Niu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bingjun Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Weiguo Hu
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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19
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Dan Z, Yang B, Song Q, Chen J, Li H, Gao W, Huang L, Zhang M, Yang M, Zheng Z, Huo N, Han L, Li J. Type-II Bi 2O 2Se/MoTe 2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18101-18113. [PMID: 36989425 DOI: 10.1021/acsami.3c01807] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
In recent years, two-dimensional (2D) nonlayered Bi2O2Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability to the atmosphere, and moderate narrow band gaps. However, 2D Bi2O2Se-based photodetectors typically present large dark current, relatively slow response speed, and persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors and low-consumption broadband detection. Herein, a Bi2O2Se/2H-MoTe2 van der Waals (vdWs) heterostructure obtained from the chemical vapor deposition (CVD) approach and vertical stacking is reported. The proposed type-II staggered band alignment desirable for suppression of dark current and separation of photoinduced carriers is confirmed by density functional theory (DFT) calculations, accompanied by strong interlayer coupling and efficient built-in potential at the junction. Consequently, a stable visible (405 nm) to near-infrared (1310 nm) response capability, a self-driven prominent responsivity (R) of 1.24 A·W-1, and a high specific detectivity (D*) of 3.73 × 1011 Jones under 405 nm are achieved. In particular, R, D*, fill factor, and photoelectrical conversion efficiency (PCE) can be enhanced to 4.96 A·W-1, 3.84 × 1012 Jones, 0.52, and 7.21% at Vg = -60 V through a large band offset originated from the n+-p junction. It is suggested that the present vdWs heterostructure is a promising candidate for logical integrated circuits, image sensors, and low-power consumption detection.
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Affiliation(s)
- Zhiying Dan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747AG, The Netherlands
| | - Baoxiang Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Qiqi Song
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Jianru Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Hengyi Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Menglong Zhang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Lixiang Han
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Jingbo Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
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20
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Luo Z, Xu H, Gao W, Yang M, He Y, Huang Z, Yao J, Zhang M, Dong H, Zhao Y, Zheng Z, Li J. High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS 2 /Te Tunneling Heterostructure. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207615. [PMID: 36605013 DOI: 10.1002/smll.202207615] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Revised: 12/23/2022] [Indexed: 06/17/2023]
Abstract
Next-generation imaging systems require photodetectors with high sensitivity, polarization sensitivity, miniaturization, and integration. By virtue of their intriguing attributes, emerging 2D materials offer innovative avenues to meet these requirements. However, the current performance of 2D photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, the lack of photoconductive gain, and insufficient photocarrier collection. Here, a tunneling dominant imaging photodetector based on WS2 /Te heterostructure is reported. This device demonstrates competitive performance, including a remarkable responsivity of 402 A W-1 , an outstanding detectivity of 9.28 × 1013 Jones, a fast rise/decay time of 1.7/3.2 ms, and a high photocurrent anisotropic ratio of 2.5. These outstanding performances can be attributed to the type-I band alignment with carrier transmission barriers and photoinduced tunneling mechanism, allowing reduced interfacial trapping effect, effective photoconductive gains, and anisotropic collection of photocarriers. Significantly, the constructed photodetector is successfully integrated into a polarized light imaging system and an ultra-weak light imaging system to illustrate the imaging capability. These results suggest the promising application prospect of the device in future imaging systems.
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Affiliation(s)
- Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Huakai Xu
- College of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong, 525000, P. R. China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Yan He
- College of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong, 525000, P. R. China
| | - Zihao Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Menglong Zhang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Huafeng Dong
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jingbo Li
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, Guangdong, 510631, P. R. China
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21
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Xu Z, Dong X, Wang L, Wu H, Liu Y, Luo J, Hong M, Li L. Precisely Tailoring a FAPbI 3-Derived Ferroelectric for Sensitive Self-Driven Broad-Spectrum Polarized Photodetection. J Am Chem Soc 2023; 145:1524-1529. [PMID: 36629502 DOI: 10.1021/jacs.2c12300] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
Benefiting from superior semiconducting properties and the angle-dependence of the bulk photovoltaic effect (BPVE) on polarized light, the two-dimensional (2D) hybrid perovskite ferroelectrics are developed for sensitive self-powered polarized photodetection. Most of the currently reported ferroelectric-driven polarized photodetection is restricted to the shortwave optical response, and expanding the response range is urgently needed. Here we report the first instance of a FAPbI3-derived (2D) perovskite ferroelectric, (BA)2(FA)Pb2I7 (1, BA is n-butylammonium, FA is formamidinium). It exhibited a notably high thermostability and broad-spectrum adsorption extending to around 650 nm. Significantly, 1 demonstrated ferroelectricity-driven self-powered polarized photodetection under 637 nm with an anisotropic photocurrent ratio of ∼1.96, ultrahigh detectivity of 3.34 × 1012 Jones, and long-term repetition. This research will shed light on the development of new ferroelectrics for potential application in broad-spectrum polarization-based optoelectronics.
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Affiliation(s)
- Zhijin Xu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Xin Dong
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Lei Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Huajie Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Yi Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
| | - Maochun Hong
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
| | - Lina Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China.,University of the Chinese Academy of Sciences, Beijing 100039, China
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