Observation of Giant Diffusivity Along Dislocation Cores

The Production of Three-Dimensional Metal Objects Using Oscillatory-Strain-Assisted Fine Wire Shaping and Joining

Material shaping and joining are the two fundamental processes that lie at the core of many forms of metal manufacturing techniques, including additive manufacturing. Current metal additive manufacturing processes such as laser/e-beam powder bed fusion and Directed Energy Deposition predominantly use heat and subsequent melt-fusion and solidification to achieve shaping and joining. The energy efficiency of these processes is severely limited due to energy conversion losses before energy is delivered at the point of melt-fusion for shaping and joining, and due to losses through heat transfer to the surrounding environment. This manuscript demonstrates that by using the physical phenomenon of lowered yield stress of metals and enhanced diffusion in the presence of low amplitude high frequency oscillatory strain, metal shaping and joining can be performed in an energy-efficient way. The two performed simultaneously enable a metal additive manufacturing process, namely Resonance-Assisted Deposition (RAD), that has several unique capabilities, like the ability to print net-shape components from hard-to-weld alloys like Al6061 and the ability to print components with a very high aspect ratio. In this study, we show this process's capabilities by printing solid components using aluminum-based metal alloys.

Insights into structural defect formation in individual InP/ZnSe/ZnS quantum dots under UV oxidation

InP/ZnSe/ZnS quantum dots (QDs) stand as promising candidates for advancing QD-organic light-emitting diodes (QLED), but low emission efficiency due to their susceptibility to oxidation impedes applications. Structural defects play important roles in the emission efficiency degradation of QDs, but the formation mechanism of defects in oxidized QDs has been less investigated. Here, we investigated the impact of diverse structural defects formation on individual QDs and propagation during UV-facilitated oxidation using high-resolution (scanning) transmission electron microscopy. UV-facilitated oxidation of the QDs alters shell morphology by the formation of surface oxides, leaving ZnSe surfaces poorly passivated. Further oxidation leads to the formation of structural defects, such as dislocations, and induces strain at the oxide-QD interfaces, facilitating In diffusion from the QD core. These changes in the QD structures result in emission quenching. This study provides insight into the formation of structural defects through photo-oxidation, and their effects on emission properties of QDs.

Pressure-Induced Dislocations and Their Influence on Ionic Transport in Li+-Conducting Argyrodites

The influence of the microstructure on the ionic conductivity and cell performance is a topic of broad scientific interest in solid-state batteries. The current understanding is that interfacial decomposition reactions during cycling induce local strain at the interfaces between solid electrolytes and the anode/cathode, as well as within the electrode composites. Characterizing the effects of internal strain on ion transport is particularly important, given the significant local chemomechanical effects caused by volumetric changes of the active materials during cycling. Here, we show the effects of internal strain on the bulk ionic transport of the argyrodite Li6PS5Br. Internal strain is reproducibly induced by applying pressures with values up to 10 GPa. An internal permanent strain is observed in the material, indicating long-range strain fields typical for dislocations. With increasing dislocation densities, an increase in the lithium ionic conductivity can be observed that extends into improved ionic transport in solid-state battery electrode composites. This work shows the potential of strain engineering as an additional approach for tuning ion conductors without changing the composition of the material itself.

Possibility of High Ionic Conductivity and High Fracture Toughness in All-Dislocation-Ceramics

Based on the results of numerical calculations as well as those of some related experiments which are reviewed in the present paper, it is suggested that solid electrolytes filled with appropriate dislocations, which is called all-dislocation-ceramics, are expected to have considerably higher ionic conductivity and higher fracture toughness than those of normal solid electrolytes. Higher ionic conductivity is due to the huge ionic conductivity along dislocations where the formation energy of vacancies is considerably lower than that in the bulk solid. Furthermore, in all-dislocation- ceramics, dendrite formation could be avoided. Higher fracture toughness is due to enhanced emissions of dislocations from a crack tip by pre-existing dislocations, which causes shielding of a crack tip, energy dissipation due to plastic deformation and heating, and crack-tip blunting. All-dislocation-ceramics may be useful for all-solid-state batteries.

Probing the Ni(OH)2 Precursor for LiNiO2 at the Atomic Scale: Insights into the Origin of Structural Defect in a Layered Cathode Active Material

In lithium ion batteries (LIBs), the layered cathode materials of composition LiNi_{1- x - y} Co_x Mn_y O₂  are critical for achieving high energy densities. A high nickel content (>80%) provides an attractive balance between high energy density, long lifetime, and low cost. Consequently, Ni-rich layered oxides cathode active materials (CAMs) are in high demand, and the importance of LiNiO₂ (LNO) as limiting case, is hence paramount. However, achieving perfect stoichiometry is a challenge resulting in various structural issues, which successively impact physicochemical properties and result in the capacity fade of LIBs. To better understand defect formation in LNO, the role of the Ni(OH)₂  precursor morphology in the synthesis of LNO requires in-depth investigation. By employing aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and precession electron diffraction, a direct observation of defects in the Ni(OH)₂  precursor preparedis reported and the ex situ structural evolution from the precursor to the end product is monitored. During synthesis, the layered Ni(OH)₂  structure transforms to partially lithiated (non-layered) NiO and finally to layered LNO. The results suggest that the defects observed in commercially relevant CAMs originate to a large extent from the precursors, hence care must be taken in tuning the co-precipitation parameters to synthesize defect-free Ni-rich layered oxides CAMs.

Understanding the Degradation of a Model Si Anode in a Li-Ion Battery at the Atomic Scale

To advance the understanding of the degradation of the liquid electrolyte and Si electrode, and their interface, we exploit the latest developments in cryo-atom probe tomography. We evidence Si anode corrosion from the decomposition of the Li salt before charge-discharge cycles even begin. Volume shrinkage during delithiation leads to the development of nanograins from recrystallization in regions left amorphous by the lithiation. The newly created grain boundaries facilitate pulverization of nanoscale Si fragments, and one is found floating in the electrolyte. P is segregated to these grain boundaries, which confirms the decomposition of the electrolyte. As structural defects are bound to assist the nucleation of Li-rich phases in subsequent lithiations and accelerate the electrolyte's decomposition, these insights into the developed nanoscale microstructure interacting with the electrolyte contribute to understanding the self-catalyzed/accelerated degradation Si anodes and can inform new battery designs unaffected by these life-limiting factors.

Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells

The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same TD reveals that the indium atoms are diffused along the TD and its concentration decreases with distance from the InGaN layer. On the basis of the results, we directly observed that the indium atoms originating from the InGaN layer diffuse toward the epitaxial GaN surface through the TD, and it is considered to have occurred via the pipe diffusion mechanism induced by strain energy relaxation.

Multi-scale simulation of proton diffusion in dislocation cores in BaZrO3

Dislocations are important for their effects on the chemical, electrical, magnetic, and transport properties of oxide materials, especially for electrochemical devices such as solid fuel cells and resistive memories, but these effects are still under-studied at the atomic level. We have developed a quantum mechanical/molecular mechanical (QM/MM)-based multiscale simulation program to reveal the diffusion properties of protons on 〈100〉 edge dislocations in BaZrO₃ perovskite oxide. We find that the large free space and the presence of hydrogen bonds in the dislocation core structure lead to significant trapping of protons. The diffusion properties of protons in dislocation cores were investigated, and no evidence of pipeline diffusion was found from the calculated migration energy barriers, which not only did not accelerate ion diffusion but rather decreases the conductivity of ions. The proton diffusion properties of Y-doped BaZrO₃ (BZY), with a dislocation core structure (BZY-D) and with a grain boundary structure (BZY-GB) were also compared. In all three structures, local lattice deformation occupies an essential part in the proton transfer and rotation processes. The change in bond order is calculated and it is found that the interaction with oxygen and Zr ions during proton transfer and rotation controls the energy barrier for local lattice deformation of the O-B-O motion, which affects the proton diffusion in the structure. Our study provides insight into proton diffusion in dislocations in terms of mechanical behavior, elucidates the origin of the energy barrier associated with proton diffusion in dislocations, and provides guidance for the preparation and application of proton conductors.

Revisiting stress-corrosion cracking and hydrogen embrittlement in 7xxx-Al alloys at the near-atomic-scale

The high-strength 7xxx series aluminium alloys can fulfil the need for light, high strength materials necessary to reduce carbon-emissions, and are extensively used in aerospace for weight reduction purposes. However, as all major high-strength materials, these alloys can be sensitive to stress-corrosion cracking (SCC) through anodic dissolution and hydrogen embrittlement (HE). Here, we study at the near-atomic-scale the intra- and inter-granular microstructure ahead and in the wake of a propagating SCC crack. Moving away from model alloys and non-industry standard tests, we perform a double cantilever beam (DCB) crack growth test on an engineering 7xxx Al-alloy. H is found segregated to planar arrays of dislocations and to grain boundaries that we can associate to the combined effects of hydrogen-enhanced localised plasticity (HELP) and hydrogen-enhanced decohesion (HEDE) mechanisms. We report on a Mg-rich amorphous hydroxide on the corroded crack surface and evidence of Mg-related diffusional processes leading to dissolution of the strengthening η-phase precipitates ahead of the crack.

Biofilm Inhibition and Antiviral Response of Cold Sprayed and Shot Peened Copper Surfaces: Effect of Surface Morphology and Microstructure

Antibacterial properties of copper against planktonic bacteria population are affected by surface microstructure and topography. However, copper interactions with bacteria in a biofilm state are less studied. This work aims at better understanding the difference in biofilm inhibition of bulk, cold-sprayed, and shot-peened copper surfaces and gaining further insights on the underlying mechanisms using optical and scanning electron microscopy to investigate the topography and microstructure of the surfaces. The biofilm inhibition ability is reported for all surfaces. Results show that the biofilm inhibition performance of cold sprayed copper, while initially better, decreases with time and results in an almost identical performance than as-received copper after 18h incubation time. The shot-peened samples with a rough and ultrafine microstructure demonstrated an enhanced biofilm control, especially at 18 hr. The biofilm control mechanisms were explained by the diffusion rates and concentration of copper ions and the interaction between these ions and the biofilm, while surface topography plays a role in the bacteria attachment at the early planktonic state. Furthermore, the data suggest that surface topography plays a key role in antiviral activity of the materials tested, with a smooth surface being the most efficient.

Graphical Abstract

Ultrafast Na Transport into Crystalline Sn via Dislocation-Pipe Diffusion

The charging process of secondary batteries is always associated with a large volume expansion of the alloying anodes, which in many cases, develops high compressive residual stresses near the propagating interface. This phenomenon causes a significant reduction in the rate performance of the anodes and is detrimental to the development of fast-charging batteries. However, for the Na-Sn battery system, the residual stresses that develop near the interface are not stored, but are relieved by the generation of high-density dislocations in crystalline Sn. Direct-contact diffusion experiments show that these dislocations facilitate the preferential transport of Na and accelerate the Na diffusion into crystalline Sn at ultrafast rates via "dislocation-pipe diffusion". Advanced analyses are performed to observe the evolution of atomic-scale structures while measuring the distribution and magnitude of residual stresses near the interface. In addition, multi-scale simulations that combined classical molecular dynamics and first-principles calculations are performed to explain the structural origins of the ultrafast diffusion rates observed in the Na-Sn system. These findings not only address the knowledge gaps regarding the relationship between pipe diffusion and the diffusivity of carrier ions but also provide guidelines for the appropriate selection of anode materials for use in fast-charging batteries.

Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects

Using GeSn semiconductor as a model system, this work unravels the atomic-level details of the behavior of solutes in the vicinity of a dislocation prior to surface segregation in strained, metastable thin layers. The dislocations appear in the 3D atom probe tomography maps as columnar regions, 3.5-4.0 nm wide, with solute concentrations 3-4 times higher than the sounding matrix. During the initial stage of phase separation, the migration of solute atoms toward the dislocation is associated with a gradual increase in Sn concentration and in density of atomic clusters, which reach 175-190 per 10³ nm³ with 12-15 atoms/cluster close to dislocations. The latter provide, at advanced stages, fast diffusive channels for Sn mass-transport to the surface, thus bringing the matrix around the dislocation to the equilibrium concentration. In parallel, an increase in solute concentration (∼0.05 at. %/nm) and in the number of atomic clusters (12-16 clusters/33 nm) is observed along the dislocation core.

The Importance of Surface Adsorbates in Solution-Processed Thermoelectric Materials: The Case of SnSe

Solution synthesis of particles emerges as an alternative to prepare thermoelectric materials with less demanding processing conditions than conventional solid-state synthetic methods. However, solution synthesis generally involves the presence of additional molecules or ions belonging to the precursors or added to enable solubility and/or regulate nucleation and growth. These molecules or ions can end up in the particles as surface adsorbates and interfere in the material properties. This work demonstrates that ionic adsorbates, in particular Na⁺ ions, are electrostatically adsorbed in SnSe particles synthesized in water and play a crucial role not only in directing the material nano/microstructure but also in determining the transport properties of the consolidated material. In dense pellets prepared by sintering SnSe particles, Na remains within the crystal lattice as dopant, in dislocations, precipitates, and forming grain boundary complexions. These results highlight the importance of considering all the possible unintentional impurities to establish proper structure-property relationships and control material properties in solution-processed thermoelectric materials.

Insight into the effects of dislocations in nanoscale titanium niobium oxide (Ti2Nb14O39) anode for boosting lithium-ion storage

Defect engineering through induction of dislocations is an efficient strategy to design and develop an electrode material with enhanced electrochemical performance in energy storage technology. Yet, synthesis, comprehension, identification, and effect of dislocation in electrode materials for lithium-ion batteries (LIBs) are still elusive. Herein, we propose an ethanol-thermal method mediated with surfactant-template and subsequent annealing under air atmosphere to induce dislocation into titanium niobium oxide (Ti₂Nb₁₄O₃₉), resultant nanoscale-dislocated-Ti₂Nb₁₄O₃₉ (Nano-dl-TNO). High-resolution transmission electron microscope (HRTEM), fast Fourier transform (FFT), and Geometrical phase analysis (GPA) denote that the high dislocation density engraved with stacking faults forms into the Ti₂Nb₁₄O₃₉ lattice. The presence of dislocation could offer an additional active site for lithium-ion storage and tune the electrical and ionic properties of the Ti₂Nb₁₄O₃₉. The resultant Nano-dl-TNO delivers superior rate capability, high specific capacity, better cycling stability, and making Ti₂Nb₁₄O₃₉ a suitable candidate among fast-charging anode materials for lithium-ion batteries. Moreover, In-situ High-resolution transmission electron microscope (HRTEM) and Geometrical phase analysis (GPA) evinces that the removal of the dislocated area in the Nano-dl-TNO leads to the contraction of the lattice, alleviation of the total volume expansion, causing the symmetrization and preserves structural stability. The present findings and designed approach reveal the rose-colored perspective of dislocation engineering into mixed transition metal oxides as next-generation anodes for advanced lithium-ion batteries and all-solid-state lithium-ion batteries.

Magnetization Reversal and Dynamics in Epitaxial Fe/Pt Spintronic Bilayers Stimulated by Interfacial Fe3O4 Nanoparticles

We have explored the impact of elevated growth and annealing temperatures on the local interfacial structure of thin Fe(12 nm)/Pt(10 nm) spintronic bilayers, epitaxially grown on MgO (100), and their correlation to magnetization reversal and dynamics. Electron-beam evaporation growth and subsequent annealing at 450 °C causes significant roughening of the MgO/Fe interface with irregular steps and multilevel (100) MgO surface terraces. Consequently, threading dislocations emerging at the step edges propagated in the Fe layer and terminated at the Fe/Pt interface, which appears pitted with pits 1.5–3 nm deep on the Fe side. Most of the pits are filled with the overlying Pt, whereby others by ferrimagnetic Fe₃O₄, forming nanoparticles that occupy nearly 9% of the Fe/Pt interfacial area. Fe₃O₄ nanoparticles occur at the termination sites of threading dislocations at the Fe/Pt interface, and their population density is equivalent to the density of threading dislocations in the Fe layer. The morphology of the Fe/Fe₃O₄/Pt system has a strong impact on the magnetization reversal, enhancing the coercive field and inducing an exchange bias below 200 K. Furthermore, low-temperature spin pumping and inverse spin Hall effect voltage measurements reveal that below their blocking temperature the nanoparticles can influence the spin current transmission and the spin rectification effects.

Phase Transformations upon Ageing in Ti15Mo Alloy Subjected to Two Different Deformation Methods

Ti15Mo alloy was subjected to two techniques of intensive plastic deformation, namely high pressure torsion and rotary swaging at room temperature. The imposed strain resulted in the formation of an ultrafine-grained structure in both deformed conditions. Detailed inspection of the microstructure revealed the presence of grains with a size of around 100 nm in both conditions. The microstructure after rotary swaging also contained elongated grains with a length up to 1 µm. Isothermal ageing at 400 °C and 500 °C up to 16 h was applied to both conditions to investigate the kinetics of precipitation of the α phase and the recovery of lattice defects. Positron annihilation spectroscopy indicated that the recovery of lattice defects in the β matrix had already occurred at 400 °C and, in terms of positron trapping, was partly compensated by the precipitation of incoherent α particles. At 500 °C the recovery was fully offset by the formation of incoherent α/β interfaces. Contrary to common coarse-grained material, in which the α phase precipitates in the form of lamellae, precipitation of small and equiaxed α particles occurred in the deformed condition. A refined two-phase equiaxed microstructure with α particles and β grain sizes below 1 μm is achievable by simple rotary swaging followed by ageing.

The hidden structure dependence of the chemical life of dislocations

Dislocations are one-dimensional defects in crystals, enabling their deformation, mechanical response, and transport properties. Less well known is their influence on material chemistry. The severe lattice distortion at these defects drives solute segregation to them, resulting in strong, localized spatial variations in chemistry that determine microstructure and material behavior. Recent advances in atomic-scale characterization methods have made it possible to quantitatively resolve defect types and segregation chemistry. As shown here for a Pt-Au model alloy, we observe a wide range of defect-specific solute (Au) decoration patterns of much greater variety and complexity than expected from the Cottrell cloud picture. The solute decoration of the dislocations can be up to half an order of magnitude higher than expected from classical theory, and the differences are determined by their structure, mutual alignment, and distortion field. This opens up pathways to use dislocations for the compositional and structural nanoscale design of advanced materials.

Free-Standing Two-Dimensional Gold Membranes Produced by Extreme Mechanical Thinning

Two-dimensional (2D) materials exhibit exceptional physical and chemical properties owing to their atomically thin structures. However, it remains challenging to produce 2D materials consisting of pure monoelemental metallic atoms. Here free-standing 2D gold (Au) membranes were prepared via in situ transmission electron microscopy straining of Au films. The applied in-plane tensile strain induces an extensive amount of out-of-plane thinning deformation in a local region of an Au thin film, resulting in the nucleation and growth of a free-standing 2D Au membrane surrounded by its film matrix. This 2D membrane is shown to be one atom thick with a simple-hexagonal lattice, which forms an atomically sharp interface with the face-centered cubic lattice of the film matrix. Diffusive transport of surface atoms, in conjunction with the dynamic evolution of interface dislocations, plays important roles in the formation of 2D Au membranes during the mechanical thinning process. These results demonstrate a top-down approach to produce free-standing 2D membranes and provide a general understanding on extreme mechanical thinning of metallic films down to the single-atom-thick limit.

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and Defect Selective Etching that even for materials with similar total dislocation densities substantially different subsets of dislocations with screw component act as current leakage paths within the AlGaN barrier under forward bias. Potential reasons are discussed and it will be directly shown by an innovative experiment that current voltage forward characteristics of AlGaN/GaN Schottky diodes shift to lower absolute voltages when such dislocations are present within the device. A local lowering of the Schottky barrier height around conductive dislocations is identified and impurity segregation is assumed as responsible root cause. While dislocation related leakage current under low reverse bias could not be resolved, breakdown of AlGaN/GaN Schottky diodes under high reverse bias correlates well with observed conductive dislocations as measured by C-AFM. If such dislocations are located near the drain side of the gate edge, failure of the gate in terms of breakdown or formation of percolation paths is observed for AlGaN/GaN high electron mobility transistors.

Understanding the Antipathogenic Performance of Nanostructured and Conventional Copper Cold Spray Material Consolidations and Coated Surfaces

The role of high strain rate and severe plastic deformation, microstructure, electrochemical behavior, surface chemistry and surface roughness were characterized for two copper cold spray material consolidations, which were produced from conventionally gas-atomized copper powder as well as spray-dried copper feedstock, during the course of this work. The motivation underpinning this work centers upon the development of a more robust understanding of the microstructural features and properties of the conventional copper and nanostructured copper coatings as they relate to antipathogenic contact killing and inactivation applications. Prior work has demonstrated greater antipathogenic efficacy with respect to the nanostructured coating versus the conventional coating. Thus, microstructural analysis was performed in order to establish differences between the two coatings that their respective pathogen kill rates could be attributed to. Results from advanced laser-induced projectile impact testing, X-ray diffraction, scanning electron microscopy, electron backscatter diffraction, scanning transmission microscopy, nanoindentation, energy-dispersive X-ray spectroscopy, nanoindentation, confocal microscopy, atomic force microscopy, linear polarization, X-ray photoelectron spectroscopy, electrochemical impedance spectroscopy and copper ion release assaying were performed during the course of this research.

Aging of γ′ Precipitates at 750 °C in the Nickel-Based Superalloy AD730TM: A Thermally or Thermo-Mechanically Controlled Process?

The microstructural stability during aging at 750 °C of the γ/γ′ nickel-based superalloy AD730TM is investigated in this work. Strain-free aging and aging during fatigue tests are conducted, with a focus on the influence of the strain ratio, the maximum applied strain, and the cycle waveform (with or without dwell). Two classical mechanisms of γ′ precipitates aging are identified at 750 °C: the coarsening of small spherical γ′ precipitates via the thermally-activated Ostwald ripening process and the coalescence of at least two precipitates into one. These mechanisms appeared to be concomitant during aging. It has been demonstrated that the coarsening kinetics of γ′ precipitates can be described by a classical Lifshitz-Slyozow-Wagner (LSW) equation. The introduction of a cyclic strain during aging at 750 °C increases the coarsening kinetics by means of changes in the volume diffusion of γ′-forming elements and of constraint misfit effects. More precisely, it is shown that the higher the maximum applied strain and/or the strain rate, the higher the coarsening rates. Finally, dwell-fatigue promotes the activation of the γ′ coalescence at 750 °C.

Unveiling the Re effect in Ni-based single crystal superalloys

Single crystal Ni-based superalloys have long been an essential material for gas turbines in aero engines and power plants due to their outstanding high temperature creep, fatigue and oxidation resistance. A turning point was the addition of only 3 wt.% Re in the second generation of single crystal Ni-based superalloys which almost doubled the creep lifetime. Despite the significance of this improvement, the mechanisms underlying the so-called “Re effect” have remained controversial. Here, we provide direct evidence of Re enrichment to crystalline defects formed during creep deformation, using combined transmission electron microscopy, atom probe tomography and phase field modelling. We reveal that Re enriches to partial dislocations and imposes a drag effect on dislocation movement, thus reducing the creep strain rate and thereby improving creep properties. These insights can guide design of better superalloys, a quest which is key to reducing CO₂ emissions in air-traffic.

Adding minute amounts of rhenium to Ni-based single crystal superalloys extends their high temperature performance in engines, but the reasons behind that are still unclear. Here, the authors combine high resolution imaging and modelling to show that rhenium enriches and slows down partial dislocations to improve creep performance.

Effect of the High-Pressure Torsion (HPT) and Subsequent Isothermal Annealing on the Phase Transformation in Biomedical Ti15Mo Alloy

Ti15Mo metastable beta Ti alloy was solution treated and subsequently deformed by high-pressure torsion (HPT). HPT-deformed and benchmark non-deformed solution-treated materials were annealed at 400 °C and 500 °C in order to investigate the effect of UFG microstructure on the α-phase precipitation. Phase evolution was examined using laboratory X-ray diffraction (XRD) and by high-energy synchrotron X-ray diffraction (HEXRD), which provided more accurate measurements. Microstructure was observed by scanning electron microscopy (SEM) and microhardness was measured for all conditions. HPT deformation was found to significantly enhance the α phase precipitation due the introduction of lattice defects such as dislocations or grain boundaries, which act as preferential nucleation sites. Moreover, in HPT-deformed material, α precipitates are small and equiaxed, contrary to the α lamellae in the non-deformed material. ω phase formation is suppressed due to massive α precipitation and consequent element partitioning. Despite that, HPT-deformed material after ageing exhibits the high microhardness exceeding 450 HV.

Three dimensional localization of unintentional oxygen impurities in gallium nitride

Further development of gallium nitride (GaN) based optoelectronic devices requires in-depth understanding of the defects present in GaN grown on a sapphire substrate. In this work, we present three dimensional secondary ion mass spectrometry (SIMS) detection of oxygen. Distribution of these impurities is not homogeneous and the vast majority of oxygen atoms are agglomerated along pillar-shaped structures. Defect-selective etching and scanning electron microscopy imaging complement SIMS results and reveal that oxygen is predominantly present along the cores of screw and mixed dislocations, which proves their high tendency to be decorated by oxygen. A negligible amount of oxygen can be found within the bulk of the material and along the edge dislocations.

Direct observation of an electrically degenerate interface layer in a GaN/sapphire heterostructure

An electrically degenerate layer deteriorates the optoelectric performance of a wide band gap semiconductor grown on an insulator substrate. This detrimental effect can be passively avoided by using a buffer layer to harbor various lattice defects. However, the longstanding scientific questions regarding the microscopic origin of the degenerate interface layer and the effect of local changes in the atomic structure and chemical environment at an interface on the functionality of a desired film have remained unanswered. Moreover, this is key information for the development of ultrathin optoelectronic devices. In this study, we discuss the direct observation of a degenerate interface phase at the GaN/sapphire interface on an atomic scale. By combining high-resolution transmission electron microscopy and electron energy loss spectroscopy, we detect the presence of an ultrathin (∼6.5 Å) α-Ga2O3-x layer near the GaN/sapphire interface, which is subjected to ∼4.5% biaxial compressive strain and contains many oxygen vacancies. Density functional theory calculations show that the presence of a defective α-Ga2O3-x thin layer in the GaN and sapphire heterostructure remarkably reduces the band offset between the α-Ga2O3-x conduction band and the GaN valence band, thereby exerting a significant influence on the conductivity enhancement of the interface. Our results provide an unprecedented integrated picture of the degenerate interface phenomenon on an atomic scale, which would evolve the fundamental understanding about a wide band gap semiconductor heterostructure system.

Fast Diffusion and Segregation along Threading Dislocations in Semiconductor Heterostructures

Heterogeneous integration of semiconductors combines the functionality of different materials, enabling technologies such as III-V lasers and solar cells on silicon and GaN LEDs on sapphire. However, threading dislocations generated during the epitaxy of these dissimilar materials remain a key obstacle to the success of this approach due to reduced device efficiencies and reliability. Strategies to alleviate this and understand charge carrier recombination at threading dislocations now need an accurate description of the structure of threading dislocations in semiconductor heterostructures. We show that the composition around threading dislocations in technologically important InGaAs/GaAs/Ge/Si heterostructures are indeed different from that of the matrix. Site-specific atom probe tomography enabled by electron channeling contrast imaging reveals this at individual dislocations. We present evidence for the simultaneous fast diffusion of germanium and indium up and down a dislocation, respectively, leading to unique compositional profiles. We also detect the formation of clusters of metastable composition at the interface between Ge and GaAs, driven by intermixing in these two nearly immiscible materials. Together, our results have important implications for the properties of dislocations and interfaces in semiconductors and provide new tools for their study.

Atomic Scale Origin of Enhanced Ionic Conductivity at Crystal Defects

In oxide materials, the presence of dislocations often strongly affects the properties of thin film and multilayer devices. Although it was reported that ionic conduction can be enhanced by introducing dislocations in ionic conductors, the underlying mechanism of such enhancement remains unclear. Here we analyzed the ionic conduction enhancement in an yttria-stabilized zirconia (YSZ) single edge dislocation from a structural point of view, using atomic resolution scanning transmission electron microscopy (STEM). First, the atomic structure and chemistry of a dislocation in YSZ were characterized by STEM and energy dispersive X-ray spectroscopy (EDS). A relative ionic conduction variation map around the dislocation was then estimated based on the well-established strain-conductivity and chemistry-conductivity relationships in YSZ. We propose that a faster ionic conductivity path can be formed around the dislocation core due to the coupling of the tensile strain field and dopant segregation, which could account for enhanced ionic conductivity along dislocations.

First Evidence for Mechanism of Inverse Ripening from In-situ TEM and Phase-Field Study of δ' Precipitation in an Al-Li Alloy

In-situ TEM investigation of aging response in an Al-7.8 at.% Li was performed at 200 °C up to 13 hours. Semi-spherical δ' precipitates growing up to an average radius of 7.5 nm were observed. The size and number of individual precipitates were recorded over time and compared to large-scale phase-field simulations without and with a chemo-mechanical coupling effect, that is, concentration dependence of the elastic constants of the matrix solid solution phase. This type of coupling was recently reported in theoretical studies leading to an inverse ripening process where smaller precipitates grew at the expense of larger ones. Considering this chemo-mechanical coupling effect, the temporal evolution of number density, average radius, and size distribution of the precipitates observed in the in-situ experiment were explained. The results indicate that the mechanism of inverse ripening can be active in this case. Formation of dislocations and precipitate-free zones are discussed as possible disturbances to the chemo-mechanical coupling effect and consequent inverse ripening process.

Isotropic Sodiation Behaviors of Ultrafast-Chargeable Tin Crystals

High-rate performance and mechanical stability of anode materials are the two important characteristics that are necessary to develop fast-charging batteries with longevity. In the present study, we demonstrate that both high rate performance and mechanical stability of the anode can be achieved with the Na-Sn battery system. Experiments show that the sodiation rate in crystalline Sn (c-Sn) is 2-3 orders of magnitude faster than that reported for the Li-Si system. Furthermore, this extraordinary rate is nearly the same regardless of the orientation of c-Sn, which can improve the cycle life by retarding the pulverization of c-Sn. Two main microstructural features responsible for the observed characteristics are identified: (1) a transformation from crystalline to amorphous phase occurring at thin layers of c-Sn near the interfacial front and (2) pipe diffusion of Na through sodiation-induced dislocations. In this study, the observed behaviors are explained by elucidating the diffusion kinetics, whereas the associated mechanistic origins are analyzed by resolving the diffusion process of Na⁺ near the Na/Sn interface using atomic simulations.

Direct Visualization of Li Dendrite Effect on LiCoO2 Cathode by In Situ TEM

Nonuniform and highly localized Li dendrites are known to cause deleterious and, in many cases, catastrophic effects on the performance of rechargeable Li batteries. However, the mechanisms of cathode failures upon contact with Li metal are far from clear. In this study, using in situ transmission electron microscopy, the interaction of Li metal with well-defined, epitaxial thin films of LiCoO₂ , the most widely used cathode material, is directly visualized at an atomic scale. It is shown that a spontaneous and prompt chemical reaction is triggered once Li contact is made, leading to expansion and pulverization of LiCoO₂ and ending with the final reaction products of Li₂ O and Co metal. A topotactic phase transition is identified close to the reaction front, resulting in the formation of CoO as a metastable intermediate. Dynamic structural and chemical imaging, in combination with ab initio simulations, reveal that a high density of grain and antiphase boundaries is formed at the reaction front, which are critical for enabling the short-range topotactic reactions and long-range Li propagation. The fundamental insights are of general importance in mitigating Li dendrites related issues and guiding the design principle for more robust energy materials.

Double-tilt in situ TEM holder with ultra-high stability

A double tilting holder with high stability is essential for acquiring atomic-scale information by transmission electron microscopy (TEM), but the availability of such holders for in situ TEM studies under various external stimuli is limited. Here, we report a unique design of seal-bearing components that provides ultra-high stability and multifunctionality (including double tilting) in an in situ TEM holder. The seal-bearing subsystem provides superior vibration damping and electrical insulation while maintaining excellent vacuum sealing and small form factor. A wide variety of in situ TEM applications including electrical measurement, STM mapping, photovoltaic studies, and CL spectroscopy can be performed on this platform with high spatial resolution imaging and electrical sensitivity at the pA scale.

The Stress-Dependent Activation Parameters for Dislocation Nucleation in Molybdenum Nanoparticles

Many specimens at the nanoscale are pristine of dislocations, line defects which are the main carriers of plasticity. As a result, they exhibit extremely high strengths which are dislocation-nucleation controlled. Since nucleation is a thermally activated process, it is essential to quantify the stress-dependent activation parameters for dislocation nucleation in order to study the strength of specimens at the nanoscale and its distribution. In this work, we calculate the strength of Mo nanoparticles in molecular dynamics simulations and we propose a method to extract the activation free-energy barrier for dislocation nucleation from the distribution of the results. We show that by deforming the nanoparticles at a constant strain rate, their strength distribution can be approximated by a normal distribution, from which the activation volumes at different stresses and temperatures are calculated directly. We found that the activation energy dependency on the stress near spontaneous nucleation conditions obeys a power-law with a critical exponent of approximately 3/2, which is in accordance with critical exponents found in other thermally activated processes but never for dislocation nucleation. Additionally, significant activation entropies were calculated. Finally, we generalize the approach to calculate the activation parameters for other driving-force dependent thermally activated processes.

Dislocations Accelerate Oxygen Ion Diffusion in La0.8Sr0.2MnO3 Epitaxial Thin Films

Revealing whether dislocations accelerate oxygen ion transport is important for providing abilities in tuning the ionic conductivity of ceramic materials. In this study, we report how dislocations affect oxygen ion diffusion in Sr-doped LaMnO₃ (LSM), a model perovskite oxide that serves in energy conversion technologies. LSM epitaxial thin films with thicknesses ranging from 10 nm to more than 100 nm were prepared by pulsed laser deposition on single-crystal LaAlO₃ and SrTiO₃ substrates. The lattice mismatch between the film and substrates induces compressive or tensile in-plane strain in the LSM layers. This lattice strain is partially reduced by dislocations, especially in the LSM films on LaAlO₃. Oxygen isotope exchange measured by secondary ion mass spectrometry revealed the existence of at least two very different diffusion coefficients in the LSM films on LaAlO₃. The diffusion profiles can be quantitatively explained by the existence of fast oxygen ion diffusion along threading dislocations that is faster by up to 3 orders of magnitude compared to that in LSM bulk.

Precipitation phenomena in Al-Zn-Mg alloy matrix composites reinforced with B4C particles

To provide insight into precipitation phenomena in age-hardening Al-Zn-Mg(-Cu) matrix composites, an Al 7075 alloy composite reinforced with B₄C particles was selected as a model system. The bulk composites were fabricated via plasma activated sintering and followed by a peak aged (T6) heat treatment. Two types of Al matrix zones were identified in the composite: (1) the regions in the vicinity of the matrix/reinforcement interface, defined as “matrix plastic zone” (MPZ) hereafter, and (2) the regions away from the matrix/reinforcement interface, simply defined as matrix hereafter. The precipitation behavior in the MPZ was characterized and compared to that in the matrix. The MPZ contained a high density of dislocations. The number density of GP zones in the MPZ is lower than that in the matrix while the average size of the GP zones in MPZ is coarser. In addition, semi-coherent platelet η′ precipitates were observed but only in the MPZ. The dislocations and the Al/B₄C interfaces provide more heterogeneous nucleation sites for the η′ precipitates in the MPZ. The growth and coarsening of the η′ precipitates caused rapid depletion of Mg and Zn solute atoms in the MPZ.

Disorder-induced transition from grain boundary to bulk dominated ionic diffusion in pyrochlores

We use molecular dynamics simulations to investigate the role of grain boundaries (GBs) on ionic diffusion in pyrochlores, as a function of the GB type, chemistry of the compound, and level of cation disorder. We observe that the presence of GBs promotes oxygen transport in ordered and low-disordered systems, as the GBs are found to have a higher concentration of mobile carriers with higher mobilities than in the bulk. Thus, in ordered samples, the ionic diffusion is 2D, localized along the grain boundary. When cation disorder is introduced, bulk carriers begin to contribute to the overall diffusion, while the GB contribution is only slightly enhanced. In highly disordered samples, the diffusive behavior at the GBs is bulk-like, and the two contributions (bulk vs. GB) can no longer be distinguished. There is thus a transition from 2D/GB dominated oxygen diffusivity to 3D/bulk dominated diffusivity versus disorder in pyrochlores. These results provide new insights into the possibility of using internal interfaces to enhance ionic conductivity in nanostructured complex oxides.

Dislocation-pipe diffusion in nitride superlattices observed in direct atomic resolution

Device failure from diffusion short circuits in microelectronic components occurs via thermally induced migration of atoms along high-diffusivity paths: dislocations, grain boundaries, and free surfaces. Even well-annealed single-grain metallic films contain dislocation densities of about 10¹⁴ m⁻²; hence dislocation-pipe diffusion (DPD) becomes a major contribution at working temperatures. While its theoretical concept was established already in the 1950s and its contribution is commonly measured using indirect tracer, spectroscopy, or electrical methods, no direct observation of DPD at the atomic level has been reported. We present atomically-resolved electron microscopy images of the onset and progression of diffusion along threading dislocations in sequentially annealed nitride metal/semiconductor superlattices, and show that this type of diffusion can be independent of concentration gradients in the system but governed by the reduction of strain fields in the lattice.

Influence of charged defects on the interfacial bonding strength of tantalum- and silver-doped nanograined TiO2

The negatively charged defects and accumulated electrons at the interfacial layer of tantalum- and silver-doped nanograined TiO₂ increase its bonding strength.

Importance and Challenges of Electrochemical in Situ Liquid Cell Electron Microscopy for Energy Conversion Research

The foreseeable worldwide energy and environmental challenges demand renewable alternative sources, energy conversion, and storage technologies. Therefore, electrochemical energy conversion devices like fuel cells, electrolyzes, and supercapacitors along with photoelectrochemical devices and batteries have high potential to become increasingly important in the near future. Catalytic performance in electrochemical energy conversion results from the tailored properties of complex nanometer-sized metal and metal oxide particles, as well as support nanostructures. Exposed facets, surface defects, and other structural and compositional features of the catalyst nanoparticles affect the electrocatalytic performance to varying degrees. The characterization of the nanometer-size and atomic regime of electrocatalysts and its evolution over time are therefore paramount for an improved understanding and significant optimization of such important technologies like electrolyzers or fuel cells. Transmission electron microscopy (TEM) and scanning transmission electron microscope (STEM) are to a great extent nondestructive characterization tools that provide structural, morphological, and compositional information with nanoscale or even atomic resolution. Due to recent marked advancement in electron microscopy equipment such as aberration corrections and monochromators, such insightful information is now accessible in many institutions around the world and provides huge benefit to everyone using electron microscopy characterization in general. Classical ex situ TEM characterization of random catalyst locations however suffers from two limitations regarding catalysis. First, the necessary low operation pressures in the range of 10(-6) to 10(-9) mbar for TEM are not in line with typical reaction conditions, especially considering electrocatalytic solid-liquid interfaces, so that the active state cannot be assessed. Second, and somewhat related, is the lack of time resolution for the evaluation of alterations of the usually highly heterogeneous nanomaterials. Two methods offer a solution to these shortcomings, namely, identical location TEM (IL-TEM) and electrochemical in situ liquid TEM. The former is already well established and has delivered novel insights particularly into degradation processes; however, characterization is still performed in vacuum. The latter circumvents this issue by using dedicated in situ TEM holders but introduces extremely demanding technical challenges. Although the introduction of revolutionizing thin SiN window cells, which elegantly confine the specimen from vacuum, has allowed demonstration of the potential of the in situ approach, the reproducibility and data interpretation is still limited predominately due to the strong interaction of the electron beam with the supporting electrolyte and electrode material. Because of the importance of understanding the nanoelectrochemical structure-function relationship, this Account aims to convey a timely perspective on the opportunities and particularly the challenges in electrochemical identical location TEM and in situ liquid cell TEM with a focus on electrochemical energy conversion.

Deformation-induced trace element redistribution in zircon revealed using atom probe tomography

Trace elements diffuse negligible distances through the pristine crystal lattice in minerals: this is a fundamental assumption when using them to decipher geological processes. For example, the reliable use of the mineral zircon (ZrSiO4) as a U-Th-Pb geochronometer and trace element monitor requires minimal radiogenic isotope and trace element mobility. Here, using atom probe tomography, we document the effects of crystal-plastic deformation on atomic-scale elemental distributions in zircon revealing sub-micrometre-scale mechanisms of trace element mobility. Dislocations that move through the lattice accumulate U and other trace elements. Pipe diffusion along dislocation arrays connected to a chemical or structural sink results in continuous removal of selected elements (for example, Pb), even after deformation has ceased. However, in disconnected dislocations, trace elements remain locked. Our findings have important implications for the use of zircon as a geochronometer, and highlight the importance of deformation on trace element redistribution in minerals and engineering materials.

The Hidden Pathways in Dense Energy Materials - Oxygen at Defects in Nanocrystalline Metals

Highly abundant oxygen-rich line defects (blue) can act as fast oxygen transport paths. These defects show similar chemistry and therefore similar catalytic activity to the materials surface. These results provide the opportunity to design and produce simple scalable structures as catalysts, whose functionality derives from internal defects rather than from the materials surfaces.

A continuum state variable theory to model the size-dependent surface energy of nanostructures

We propose a continuum-based state variable theory to quantify the excess surface free energy density throughout a nanostructure. The size-dependent effect exhibited by nanoplates and spherical nanoparticles i.e. the reduction of surface energy with reducing nanostructure size is well-captured by our continuum state variable theory. Our constitutive theory is also able to predict the reducing energetic difference between the surface and interior (bulk) portions of a nanostructure with decreasing nanostructure size.

Atomic resolution observation of conversion-type anode RuO₂ during the first electrochemical lithiation

Transition metal oxides have attracted great interest as alternative anode materials for rechargeable lithium-ion batteries. Among them, ruthenium dioxide is considered to be a prototype material that reacts with the Li ions in the conversion type. In situ transmission electron microscopy reveals a two-step process during the initial lithiation of the RuO2 nanowire anode at atomic resolution. The first step is characterized by the formation of the intermediate phase LixRuO2 due to the Li-ion intercalation. The following step is manifested by the solid-state amorphization reaction driven by advancing the reaction front. The crystalline/amorphous interface is consisted of {011} atomic terraces, revealing the orientation-dependent mobility. In the crystalline matrix, lattice disturbance and dislocation are identified to be two major stress-induced distortions. The latter can be effective diffusion channels, facilitating transportation of the Li ions inside the bulk RuO2 crystal and further resulting in non-uniform Li-ion distribution. It is expected that the local enrichment of the Li ions may account for the homogeneous nucleation of dislocations in the bulk RuO2 crystal and the special island-like structures. These results elucidate the structural evolution and the phase transformation during electrochemical cycling, which sheds light on engineering RuO2 anode materials.

Dislocation-induced nanoparticle decoration on a GaN nanowire

GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [1̅21̅0]np//[1̅21̅0]nw, (0001)np//(0001)nw; (II) [1̅21̅3]np//[12̅10]nw, (101̅0)np//(101̅0)nw. An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles.

A dislocation core in titanium dioxide and its electronic structure

We provide a direct atomic-resolution imaging of the core structure of a dislocation in technologically important TiO₂ and predict that every individual impurity-free dislocation exhibits electric conductivity in an otherwise insulating TiO₂.