1
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Nachawaty A, Chen T, Ibrahim F, Wang Y, Hao Y, Dalla Francesca K, Tyagi P, Da Costa A, Ferri A, Liu C, Li X, Chshiev M, Migot S, Badie L, Jahjah W, Desfeux R, Le Breton JC, Schieffer P, Le Pottier A, Gries T, Devaux X, Lu Y. Voltage-Driven Fluorine Motion for Novel Organic Spintronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401611. [PMID: 38848668 DOI: 10.1002/adma.202401611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2024] [Revised: 05/04/2024] [Indexed: 06/09/2024]
Abstract
Integrating tunneling magnetoresistance (TMR) effect in memristors is a long-term aspiration because it allows to realize multifunctional devices, such as multi-state memory and tunable plasticity for synaptic function. However, the reported TMR in different multiferroic tunnel junctions is limited to 100%. This work demonstrates a giant TMR of -266% in La0.6Sr0.4MnO3(LSMO)/poly(vinylidene fluoride)(PVDF)/Co memristor with thin organic barrier. Different from the ferroelectricity-based memristors, this work discovers that the voltage-driven florine (F) motion in the junction generates a huge reversible resistivity change up to 106% with nanosecond (ns) timescale. Removing F from PVDF layer suppresses the dipole field in the tunneling barrier, thereby significantly enhances the TMR. Furthermore, the TMR can be tuned by different polarizing voltage due to the strong modification of spin-polarization at the LSMO/PVDF interface upon F doping. Combining of high TMR in the organic memristor paves the way to develop high-performance multifunctional devices for storage and neuromorphic applications.
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Affiliation(s)
- Abir Nachawaty
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Tongxin Chen
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Fatima Ibrahim
- Univ. Grenoble Alpes, CEA, CNRS, Spintec, Grenoble, 38000, France
| | - Yuchen Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Yafei Hao
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
- Physics Department, Zhejiang Normal University, Jinhua, 321004, China
| | - Kevin Dalla Francesca
- Univ. Artois, CNRS, Centrale Lille, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS), Lens, F-62300, France
| | - Priyanka Tyagi
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Antonio Da Costa
- Univ. Artois, CNRS, Centrale Lille, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS), Lens, F-62300, France
| | - Anthony Ferri
- Univ. Artois, CNRS, Centrale Lille, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS), Lens, F-62300, France
| | - Chuanchuan Liu
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Xiaoguang Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China, Hefei, 230026, China
| | - Mairbek Chshiev
- Univ. Grenoble Alpes, CEA, CNRS, Spintec, Grenoble, 38000, France
- Institut Universitaire de France, Paris, 75231, France
| | - Sylvie Migot
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Laurent Badie
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Walaa Jahjah
- Univ. Rennes-CNRS, IPR (Institut de Physique de Rennes)-UMR 6251, Rennes, F-35000, France
| | - Rachel Desfeux
- Univ. Artois, CNRS, Centrale Lille, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS), Lens, F-62300, France
| | | | - Philippe Schieffer
- Univ. Rennes-CNRS, IPR (Institut de Physique de Rennes)-UMR 6251, Rennes, F-35000, France
| | - Arnaud Le Pottier
- Univ. Rennes-CNRS, IPR (Institut de Physique de Rennes)-UMR 6251, Rennes, F-35000, France
| | - Thomas Gries
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Xavier Devaux
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
| | - Yuan Lu
- Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, Nancy, 54011, France
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2
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Liu YC, Chen JX, Fu PX, Liao YQ, Wang YH, Wang YX, Liu Z, Gao S, Jiang SD. Electrically Induced Crystal Field Distortion in a Ferroelectric Perovskite Revealed by Electron Paramagnetic Resonance. J Am Chem Soc 2024; 146:19397-19404. [PMID: 38959221 DOI: 10.1021/jacs.4c05655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/05/2024]
Abstract
The magnetoelectric material has attracted multidisciplinary interest in the past decade for its potential to accommodate various functions. Especially, the external electric field can drive the quantum behaviors of such materials via the spin-electric coupling effect, with the advantages of high spatial resolution and low energy cost. In this work, the spin-electric coupling effect of Mn2+-doped ferroelectric organic-inorganic hybrid perovskite [(CH3)3NCH2Cl]CdCl3 with a large piezoelectric effect was investigated. The electric field manipulation efficiency for the allowed transitions was determined by the pulsed electron paramagnetic resonance. The orientation-included Hamiltonian of the spin-electric coupling effect was obtained via simulating the angle-dependent electric field modulated continuous-wave electron paramagnetic resonance. The results demonstrate that the applied electric field affects not only the principal values of the zero-field splitting tensor but also its principal axis directions. This work proposes and exemplifies a route to understand the spin-electric coupling effect originating from the crystal field imposed on a spin ion being modified by the applied electric field, which may guide the rational screening and designing of hybrid perovskite ferroelectrics that satisfy the efficiency requirement of electric field manipulation of spins in quantum information applications.
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Affiliation(s)
- You-Chao Liu
- Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou 511442, China
| | - Jia-Xin Chen
- Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou 511442, China
| | - Peng-Xiang Fu
- Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Yi-Qiu Liao
- Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou 511442, China
| | - Yi-Han Wang
- Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Ye-Xin Wang
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area, Shenzhen-Hong Kong International Science and Technology Park, No. 3 Binglang Road, Futian District, Shenzhen, Guangdong 518045, China
| | - Zheng Liu
- Key Laboratory of Bioinorganic and Synthetic Chemistry of Ministry of Education, LIFM, School of Chemistry, IGCME, Sun Yat-Sen University, Guangzhou 510275, China
| | - Song Gao
- Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou 511442, China
- Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Key Laboratory of Bioinorganic and Synthetic Chemistry of Ministry of Education, LIFM, School of Chemistry, IGCME, Sun Yat-Sen University, Guangzhou 510275, China
| | - Shang-Da Jiang
- Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou 511442, China
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3
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Zhang Y, Sun W, Cao K, Yang XX, Yang Y, Lu S, Du A, Hu C, Feng C, Wang Y, Cai J, Cui B, Piao HG, Zhao W, Zhao Y. Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling. SCIENCE ADVANCES 2024; 10:eadl4633. [PMID: 38640249 PMCID: PMC11029801 DOI: 10.1126/sciadv.adl4633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Accepted: 03/15/2024] [Indexed: 04/21/2024]
Abstract
Magnetic tunnel junctions (MTJs) are the core elements of spintronic devices. Now, the mainstream writing operation of MTJs mainly relies on electric current with high energy dissipation, which can be greatly reduced if an electric field is used instead. In this regard, strain-mediated multiferroic heterostructure composed of MTJ and ferroelectrics are promising with the advantages of room temperature and magnetic field-free as already demonstrated by MTJ with in-plane magnetic anisotropy. However, there is no such report on the perpendicular MTJs (p-MTJs), which have been commercialized. Here, we investigate electric-field control of resistance state of MgO-based p-MTJs in multiferroic heterostructures. A remarkable and nonvolatile manipulation of resistance is demonstrated at room temperature without magnetic field assistance. Through various characterizations and micromagnetic simulation, the manipulation mechanism is uncovered. Our work provides an effective avenue for manipulating p-MTJ resistance by electric fields and is notable for high density and ultralow power spintronic devices.
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Affiliation(s)
- Yike Zhang
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Weideng Sun
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Kaihua Cao
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China
| | - Xiao-Xue Yang
- Department of Physics, Yanbian University, Yanji 133002, China
| | - Yongqiang Yang
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Shiyang Lu
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China
| | - Ao Du
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China
| | - Chaoqun Hu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ce Feng
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Yutong Wang
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Jianwang Cai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Baoshan Cui
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China
| | - Hong-Guang Piao
- Department of Physics, Yanbian University, Yanji 133002, China
| | - Weisheng Zhao
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China
| | - Yonggang Zhao
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
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4
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Jo J, Mañas-Valero S, Coronado E, Casanova F, Gobbi M, Hueso LE. Nonvolatile Electric Control of Antiferromagnet CrSBr. NANO LETTERS 2024; 24:4471-4477. [PMID: 38587318 DOI: 10.1021/acs.nanolett.4c00348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway toward the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components that would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antiferromagnets, despite their growing significance in spintronics. Here, we demonstrate nonvolatile electric field control of magnetoelectric characteristics in van der Waals antiferromagnet CrSBr. We integrate a CrSBr channel in a flash-memory architecture featuring charge trapping graphene multilayers. The electrical gate operation triggers a nonvolatile 200% change in the antiferromagnetic state of CrSBr resistance by manipulating electron accumulation/depletion. Moreover, the nonvolatile gate modulates the metamagnetic transition field of CrSBr and the magnitude of magnetoresistance. Our findings highlight the potential of manipulating magnetic properties of antiferromagnetic semiconductors in a nonvolatile way.
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Affiliation(s)
- Junhyeon Jo
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol) Universitat de València, Catedrático José Beltrán 2, Paterna 46980, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol) Universitat de València, Catedrático José Beltrán 2, Paterna 46980, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
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5
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Sun W, Zhang Y, Cao K, Lu S, Du A, Huang H, Zhang S, Hu C, Feng C, Liang W, Liu Q, Mi S, Cai J, Lu Y, Zhao W, Zhao Y. Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers. SCIENCE ADVANCES 2024; 10:eadj8379. [PMID: 38579008 PMCID: PMC10997210 DOI: 10.1126/sciadv.adj8379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2023] [Accepted: 03/05/2024] [Indexed: 04/07/2024]
Abstract
Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(Mg1/3Nb2/3)0.7Ti0.3O3 beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non-in-plane magnetic anisotropy.
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Affiliation(s)
- Weideng Sun
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Yike Zhang
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Kaihua Cao
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China
| | - Shiyang Lu
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China
| | - Ao Du
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China
| | - Haoliang Huang
- Anhui Laboratory of Advanced Photon Science and Technology and Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Sen Zhang
- College of Science, National University of Defense Technology, Changsha 410073, China
| | - Chaoqun Hu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ce Feng
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Wenhui Liang
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Quan Liu
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Shu Mi
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Jianwang Cai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yalin Lu
- Anhui Laboratory of Advanced Photon Science and Technology and Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Weisheng Zhao
- Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China
| | - Yonggang Zhao
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
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6
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Li X, Liu J, Huang J, Huang B, Li L, Li Y, Hu W, Li C, Ali S, Yang T, Xue F, Han Z, Tang YL, Hu W, Zhang Z. Epitaxial Strain Enhanced Ferroelectric Polarization toward a Giant Tunneling Electroresistance. ACS NANO 2024; 18:7989-8001. [PMID: 38438318 DOI: 10.1021/acsnano.3c10933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/06/2024]
Abstract
A substantial ferroelectric polarization is the key for designing high-performance ferroelectric nonvolatile memories. As a promising candidate system, the BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric/ferromagnetic heterostructure has attracted a lot of attention thanks to the merits of high Curie temperature, large spin polarization, and low ferroelectric coercivity. Nevertheless, the BTO/LSMO heterostructure suffers from a moderate FE polarization, primarily due to the quick film-thickness-driven strain relaxation. In response to this challenge, we propose an approach for enhancing the FE properties of BTO films by using a Sr3Al2O6 (SAO) buffering layer to mitigate the interfacial strain relaxation. The continuously tunable strain allows us to illustrate the linear dependence of polarization on epitaxial strain with a large strain-sensitive coefficient of ∼27 μC/cm2 per percent strain. This results in a giant polarization of ∼80 μC/cm2 on the BTO/LSMO interface. Leveraging this large polarization, we achieved a giant tunneling electroresistance (TER) of ∼105 in SAO-buffered Pt/BTO/LSMO ferroelectric tunnel junctions (FTJs). Our research uncovers the fundamental interplay between strain, polarization magnitude, and device performance, such as on/off ratio, thereby advancing the potential of FTJs for next-generation information storage applications.
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Affiliation(s)
- Xiaoqi Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Jiaqi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Jianqi Huang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Biaohong Huang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Lingli Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Yizhuo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Wentao Hu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Changji Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Sajjad Ali
- Energy, Water, and Environment Lab, College of Humanities and Sciences, Prince Sultan University, Riyadh 11586, Saudi Arabia
| | - Teng Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Fei Xue
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 311215, China
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan 030006, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Weijin Hu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
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7
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Cui Z, Sa B, Xue KH, Zhang Y, Xiong R, Wen C, Miao X, Sun Z. Magnetic-ferroelectric synergic control of multilevel conducting states in van der Waals multiferroic tunnel junctions towards in-memory computing. NANOSCALE 2024; 16:1331-1344. [PMID: 38131373 DOI: 10.1039/d3nr04712a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
van der Waals (vdW) multiferroic tunnel junctions (MFTJs) based on two-dimensional materials have gained significant interest due to their potential applications in next-generation data storage and in-memory computing devices. In this study, we construct vdW MFTJs by employing monolayer Mn2Se3 as the spin-filter tunnel barrier, TiTe2 as the electrodes and In2S3 as the tunnel barrier to investigate the spin transport properties based on first-principles quantum transport calculations. It is highlighted that apparent tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects with a maximum TMR ratio of 6237% and TER ratio of 1771% can be realized by using bilayer In2S3 as the tunnel barrier under finite bias. Furthermore, the physical origin of the distinguished TMR and TER effects is unraveled from the k||-resolved transmission spectra and spin-dependent projected local density of states analysis. Interestingly, four distinguishable conductance states reveal the implementation of four-state nonvolatile data storage using one MFTJ unit. More importantly, in-memory logic computing and multilevel data storage can be achieved at the same time by magnetic switching and electrical control, respectively. These results shed light on vdW MFTJs in the applications of in-memory computing as well as multilevel data storage devices.
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Affiliation(s)
- Zhou Cui
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China.
| | - Baisheng Sa
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China.
| | - Kan-Hao Xue
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yinggan Zhang
- College of Materials, Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University, Xiamen 361005, P. R. China
| | - Rui Xiong
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China.
| | - Cuilian Wen
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China.
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhimei Sun
- School of Materials Science and Engineering, and Center for Integrated Computational Materials Science, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China.
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8
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Feng G, Zhu Q, Liu X, Chen L, Zhao X, Liu J, Xiong S, Shan K, Yang Z, Bao Q, Yue F, Peng H, Huang R, Tang X, Jiang J, Tang W, Guo X, Wang J, Jiang A, Dkhil B, Tian B, Chu J, Duan C. A ferroelectric fin diode for robust non-volatile memory. Nat Commun 2024; 15:513. [PMID: 38218871 PMCID: PMC10787831 DOI: 10.1038/s41467-024-44759-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Accepted: 12/29/2023] [Indexed: 01/15/2024] Open
Abstract
Among today's nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, because of the tremendous development of artificial intelligence and big-data issues, there is an urgent need to realize high-density crossbar arrays, a prerequisite for the future of memories and emerging computing algorithms. Here, a two-terminal ferroelectric fin diode (FFD) in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes is designed. Such a device not only shows both digital and analog memory functionalities but is also robust and universal as it works using two very different ferroelectric materials. When compared to all current nonvolatile memories, it cumulatively demonstrates an endurance up to 1010 cycles, an ON/OFF ratio of ~102, a feature size of 30 nm, an operating energy of ~20 fJ and an operation speed of 100 ns. Beyond these superior performances, the simple two-terminal structure and their self-rectifying ratio of ~ 104 permit to consider them as new electronic building blocks for designing passive crossbar arrays which are crucial for the future in-memory computing.
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Affiliation(s)
- Guangdi Feng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Zhejiang Lab, Hangzhou, 310000, China
| | - Qiuxiang Zhu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Zhejiang Lab, Hangzhou, 310000, China
| | - Xuefeng Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Luqiu Chen
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Xiaoming Zhao
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Jianquan Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Shaobing Xiong
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Kexiang Shan
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Zhenzhong Yang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Qinye Bao
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Hui Peng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Jie Jiang
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Wei Tang
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200030, China
| | - Xiaojun Guo
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200030, China
| | - Jianlu Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Anquan Jiang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Brahim Dkhil
- Université Paris-Saclay, CentraleSupélec, CNRS-UMR8580, Laboratoire SPMS, 91190, Gif-sur-Yvette, France
| | - Bobo Tian
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Zhejiang Lab, Hangzhou, 310000, China.
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
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9
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Nakagawa T, Ding Y, Bu K, Lü X, Liu H, Moliterni A, Popović J, Mihalik M, Jagličić Z, Mihalik M, Vrankić M. Photophysical Behavior of Triethylmethylammonium Tetrabromoferrate(III) under High Pressure. Inorg Chem 2023; 62:19527-19541. [PMID: 38044824 DOI: 10.1021/acs.inorgchem.3c02607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
The pressure-induced properties of hybrid organic-inorganic ferroelectrics (HOIFs) with tunable structures and selectable organic and inorganic components are important for device fabrication. However, given the structural complexity of polycrystalline HOIFs and the limited resolution of pressure data, resolving the structure-property puzzle has so far been the exception rather than the rule. With this in mind, we present a collection of in situ high-pressure data measured for triethylmethylammonium tetrabromoferrate(III), ([N(C2H5)3CH3][FeBr4]) (EMAFB) by unraveling its flexible physical and photophysical behavior up to 80 GPa. Pressure-driven X-ray diffraction and Raman spectroscopy disclose its soft and reversible structural distortion, creating room for delicate band gap modulation. During compression, orange turns dark red at ∼2 GPa, and further compression results in piezochromism, leading to opaque black, while decompressed EMAFB appears in an orange hue. Assuming that the mechanical softness of EMAFB is the basis for reversible piezochromic control, we present alternations in the electronic landscape leading to a 1.22 eV band narrowing at 20.3 GPa while maintaining the semiconducting character at 72 GPa. EMAFB exhibits an emission enhancement, manifested by an increase of photoluminescence up to 17.3 GPa, correlating with the onsets of structural distortion and amorphization. The stimuli-responsive behavior of EMAFB, exhibiting stress-activated modification of the electronic structure, can enrich the physical library of HOIFs suitable for pressure-sensing technologies.
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Affiliation(s)
- Takeshi Nakagawa
- Center for High-Pressure Science & Technology Advanced Research, 100094 Beijing, P. R. China
| | - Yang Ding
- Center for High-Pressure Science & Technology Advanced Research, 100094 Beijing, P. R. China
| | - Kejun Bu
- Center for High-Pressure Science & Technology Advanced Research, 100094 Beijing, P. R. China
| | - Xujie Lü
- Center for High-Pressure Science & Technology Advanced Research, 100094 Beijing, P. R. China
| | - Haozhe Liu
- Center for High-Pressure Science & Technology Advanced Research, 100094 Beijing, P. R. China
| | - Anna Moliterni
- Institute of Crystallography (IC)-CNR, Via Amendola 122/O, 70126 Bari, Italy
| | - Jasminka Popović
- Division of Materials Physics, Rud̵er Bošković Institute, Bijenička 54, 10000 Zagreb, Croatia
| | - Marian Mihalik
- Institute of Experimental Physics, Watsonova 47, 040 01 Košice, Slovak Republic
| | - Zvonko Jagličić
- Institute of Mathematics, Physics and Mechanics, Jadranska 19, 1000 Ljubljana, Slovenia
- Faculty of Civil and Geodetic Engineering, University of Ljubljana, Jamova 2, 1000 Ljubljana, Slovenia
| | - Matúš Mihalik
- Institute of Experimental Physics, Watsonova 47, 040 01 Košice, Slovak Republic
| | - Martina Vrankić
- Division of Materials Physics, Rud̵er Bošković Institute, Bijenička 54, 10000 Zagreb, Croatia
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10
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Kinha M, Dagar R, Sahoo J, Rakshit R, Rana DS. Observation of negative terahertz photoconductivity in strongly correlated electron-doped CaMnO 3thin film. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35. [PMID: 37080209 DOI: 10.1088/1361-648x/acceef] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Accepted: 04/20/2023] [Indexed: 05/03/2023]
Abstract
Electron-doped Ca0.96Ce0.04MnO3(CCMO) possesses a unique band structure and exhibits a giant topological Hall effect contrary to other correlation-driven manganites known for insulator-to-metal transition, magnetoresistance, complex magnetic order, etc. The interaction mechanisms among the fundamental entities and their dynamical evolutions responsible for this unusual topological phase are yet to be understood. Here, we employ time-averaged and sub-picosecond time-resolved terahertz (THz) spectroscopy to explore the low-energy steady-state and ultrafast carrier dynamics, respectively, to unravel the complexity of charge carriers during their transition from a non-equilibrium state to the ground state in CCMO thin film. The THz optical conductivity confirms the presence of dichotomic charge carriers, i.e. heavy and light carriers throughout the temperature range of 15-300 K. A rare observation of both positive and negative photoconductivities along with a sharp crossover between the two resolved to a few picoseconds of illumination confirms the formation of polaron with a lifetime of a few nanoseconds. These optical evidences of dichotomic charge carriers, along with manipulation of the sign of photoconductivity induced by dynamics of related quasiparticles could facilitate a new mechanism for ultrafast optoelectronic switching devices.
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Affiliation(s)
- Monu Kinha
- Department of Physics, Indian Institute of Science Education and Research Bhopal, Bhopal 462066, Madhya Pradesh, India
| | - Rahul Dagar
- Department of Physics, Indian Institute of Science Education and Research Bhopal, Bhopal 462066, Madhya Pradesh, India
| | - Jayaprakash Sahoo
- Department of Physics, Indian Institute of Science Education and Research Bhopal, Bhopal 462066, Madhya Pradesh, India
| | - Rupali Rakshit
- Solid State and Structural Chemistry Unit, Indian Institute of Science, CV Raman Road, Bengaluru 560012, Karnataka, India
| | - D S Rana
- Department of Physics, Indian Institute of Science Education and Research Bhopal, Bhopal 462066, Madhya Pradesh, India
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11
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Li Z, Chen B, Shan S, Zhang Y. Magnetization reversal of perpendicular magnetic anisotropy regulated by ferroelectric polarization in CoFe 3N/BaTiO 3 heterostructures: first-principles calculations. RSC Adv 2023; 13:9924-9931. [PMID: 37034450 PMCID: PMC10075283 DOI: 10.1039/d3ra01842c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Accepted: 03/29/2023] [Indexed: 04/11/2023] Open
Abstract
Exploring the electric-field switching of perpendicular magnetic anisotropy (PMA) in multiferroic heterostructures has important physical significance, which attracts great interest due to its promising application for energy-efficient information storage. Herewith, we investigate the effect of ferroelectric polarization on magnetic anisotropy in CoFe3N/BaTiO3 heterostructures using first-principles calculations. The calculations reveal that the magnetic anisotropy of CoFe3N can be regulated by ferroelectric polarization of BaTiO3. When the ferroelectric polarization reverses, the PMA of FeCo-TiO2 and FeN-BaO configurations remains, but in the FeN-TiO2 and FeCo-BaO cases, magnetic anisotropy inverses between out-of-plane and in-plane direction. Further orbital-resolved analysis indicates that the transition of magnetic anisotropy is mainly attributed to the orbital hybridization of interfacial Fe/Co atoms with O atoms induced by the magnetoelectric effect. This study may open an effective approach toward modulating PMA and lays a foundation to the development of low energy consumption memory devices.
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Affiliation(s)
- Zirun Li
- School of Semiconductor and Physics, North University of China Taiyuan 030051 China
| | - Bo Chen
- School of Semiconductor and Physics, North University of China Taiyuan 030051 China
| | - Shimin Shan
- School of Semiconductor and Physics, North University of China Taiyuan 030051 China
| | - Yongmei Zhang
- School of Semiconductor and Physics, North University of China Taiyuan 030051 China
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12
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Yu D, Ga Y, Liang J, Jia C, Yang H. Voltage-Controlled Dzyaloshinskii-Moriya Interaction Torque Switching of Perpendicular Magnetization. PHYSICAL REVIEW LETTERS 2023; 130:056701. [PMID: 36800473 DOI: 10.1103/physrevlett.130.056701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2022] [Revised: 09/30/2022] [Accepted: 12/20/2022] [Indexed: 06/18/2023]
Abstract
Magnetization switching is the most important operation in spintronic devices. In modern nonvolatile magnetic random-access memory (MRAM), it is usually realized by spin-transfer torque (STT) or spin-orbit torque (SOT). However, both STT and SOT MRAM require current to drive magnetization switching, which will cause Joule heating. Here, we report an alternative mechanism, Dzyaloshinskii-Moriya interaction (DMI) torque, that can realize magnetization switching fully controlled by voltage pulses. We find that a consequential voltage-controlled reversal of DMI chirality in multiferroics can lead to continued expansion of a skyrmion thanks to the DMI torque. Enough DMI torque will eventually make the skyrmion burst into a quasiuniform ferromagnetic state with reversed magnetization, thus realizing the switching of a perpendicular magnet. The discovery is demonstrated in two-dimensional multiferroics, CuCrP_{2}Se_{6} and CrN, using first-principles calculations and micromagnetic simulations. As an example, we applied the DMI torque for simulating leaky-integrate-fire functionality of biological neurons. Our discovery of DMI torque switching of perpendicular magnetization provides tremendous potential toward magnetic-field-free and current-free spintronic devices, and neuromorphic computing as well.
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Affiliation(s)
- Dongxing Yu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Yonglong Ga
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Jinghua Liang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Chenglong Jia
- Key Laboratory for Magnetism and Magnetic Materials of MOE and Lanzhou Center for Theoretical Physics, Lanzhou University, Lanzhou 730000, China
| | - Hongxin Yang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
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13
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Cirino MJ, Rojas O, de Souza SM, Torrico J, Lyra ML, Pereira MSS. Residual entropy and magnetocaloric effect in a diluted sawtooth spin model of hole-doped CuO chains. Phys Rev E 2023; 107:014141. [PMID: 36797920 DOI: 10.1103/physreve.107.014141] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2022] [Accepted: 01/10/2023] [Indexed: 06/18/2023]
Abstract
Ground-state and magnetocaloric properties of a site-diluted sawtooth magnetic chain in the presence of an external magnetic field are exactly investigated by using the transfer-matrix method. The model captures the main magnetic interactions along CuO chains present in some hole-doped cuprates. The ground-state diagram is exhibited and analytical expressions for the residual entropy within each ground state and along the transition lines are derived. We explicitly discuss the role of the underlying pairing correlations and the entropy maximization principle. The isothermal entropy change is determined as a function of interaction parameters, doping concentration, and magnetic-field amplitude. Normal and inverse magnetocaloric effects are reported. Adiabatic demagnetization curves are discussed in connection with configurational and spin contributions to the residual entropy.
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Affiliation(s)
- Miquéias J Cirino
- Instituto de Física, Universidade Federal de Alagoas, 57072-970 Maceió-AL, Brazil
| | - Onofre Rojas
- Departamento de Física, Universidade Federal de Lavras, 37200-900 Lavras-MG, Brazil
| | - S M de Souza
- Departamento de Física, Universidade Federal de Lavras, 37200-900 Lavras-MG, Brazil
| | - Jordana Torrico
- Departamento de Física, Universidade Federal de Minas Gerais, C.P. 702, 30123-970 Belo Horizonte-MG, Brazil
| | - Marcelo L Lyra
- Instituto de Física, Universidade Federal de Alagoas, 57072-970 Maceió-AL, Brazil
| | - Maria S S Pereira
- Instituto de Física, Universidade Federal de Alagoas, 57072-970 Maceió-AL, Brazil
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14
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Zhang CY, Zhang C, Sun GW, Pan JL, Gong L, Sun GZ, Biendicho JJ, Balcells L, Fan XL, Morante JR, Zhou JY, Cabot A. Spin Effect to Promote Reaction Kinetics and Overall Performance of Lithium‐Sulfur Batteries under External Magnetic Field. Angew Chem Int Ed Engl 2022; 61:e202211570. [DOI: 10.1002/anie.202211570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Indexed: 11/06/2022]
Affiliation(s)
- Chao Yue Zhang
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education & School of Physical Science & Technology Lanzhou University Lanzhou 730000 China
- Catalonia Institute for Energy Research, IREC Sant Adrià de Besòs 08930 Barcelona Spain
| | - Chaoqi Zhang
- Catalonia Institute for Energy Research, IREC Sant Adrià de Besòs 08930 Barcelona Spain
| | - Guo Wen Sun
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education & School of Physical Science & Technology Lanzhou University Lanzhou 730000 China
| | - Jiang Long Pan
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education & School of Physical Science & Technology Lanzhou University Lanzhou 730000 China
| | - Li Gong
- Catalonia Institute for Energy Research, IREC Sant Adrià de Besòs 08930 Barcelona Spain
| | - Geng Zhi Sun
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials Nanjing Tech University 30 South Puzhu Road Nanjing 211816 China
| | - Jordi Jacas Biendicho
- Catalonia Institute for Energy Research, IREC Sant Adrià de Besòs 08930 Barcelona Spain
| | - Lluís Balcells
- Institut de Ciència de Materials de Barcelona Campus de la UAB 08193 Bellaterra Catalonia Spain
| | - Xiao Long Fan
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education & School of Physical Science & Technology Lanzhou University Lanzhou 730000 China
| | - Joan Ramon Morante
- Catalonia Institute for Energy Research, IREC Sant Adrià de Besòs 08930 Barcelona Spain
| | - Jin Yuan Zhou
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education & School of Physical Science & Technology Lanzhou University Lanzhou 730000 China
- School of Physics and Electronic Information Engineering Qinghai Normal University Xining 810008 China
| | - Andreu Cabot
- Catalonia Institute for Energy Research, IREC Sant Adrià de Besòs 08930 Barcelona Spain
- Catalan Institution for Research and Advanced Studies, ICREA Pg. Lluís Companys 23 08010 Barcelona Spain
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15
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From Quantum Materials to Microsystems. MATERIALS 2022; 15:ma15134478. [PMID: 35806603 PMCID: PMC9267837 DOI: 10.3390/ma15134478] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/11/2022] [Revised: 06/21/2022] [Accepted: 06/21/2022] [Indexed: 12/04/2022]
Abstract
The expression “quantum materials” identifies materials whose properties “cannot be described in terms of semiclassical particles and low-level quantum mechanics”, i.e., where lattice, charge, spin and orbital degrees of freedom are strongly intertwined. Despite their intriguing and exotic properties, overall, they appear far away from the world of microsystems, i.e., micro-nano integrated devices, including electronic, optical, mechanical and biological components. With reference to ferroics, i.e., functional materials with ferromagnetic and/or ferroelectric order, possibly coupled to other degrees of freedom (such as lattice deformations and atomic distortions), here we address a fundamental question: “how can we bridge the gap between fundamental academic research focused on quantum materials and microsystems?”. Starting from the successful story of semiconductors, the aim of this paper is to design a roadmap towards the development of a novel technology platform for unconventional computing based on ferroic quantum materials. By describing the paradigmatic case of GeTe, the father compound of a new class of materials (ferroelectric Rashba semiconductors), we outline how an efficient integration among academic sectors and with industry, through a research pipeline going from microscopic modeling to device applications, can bring curiosity-driven discoveries to the level of CMOS compatible technology.
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16
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Chen Y, Tang Z, Dai M, Luo X, Zheng Y. Giant magnetoresistance and tunneling electroresistance in multiferroic tunnel junctions with 2D ferroelectrics. NANOSCALE 2022; 14:8849-8857. [PMID: 35695845 DOI: 10.1039/d2nr00785a] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Multiferroic tunneling junctions (MFTJs), composed of two magnetic electrodes separated by an ultrathin ferroelectric (FE) thin film as a barrier, have received great attention in multi-functional devices. Recent theoretical and experimental works have revealed that ferroelectric polarization exists at room temperature in two-dimensional ferroelectric (2D FE) materials within the ultrathin thickness. Here we propose a novel MFTJ Ni/bilayer In2Se3/BN/Ni, in which the resistance of the tunneling spin polarization electrons can be modulated by different magnetization alignments of the electrode and electric polarization direction of the 2D FE In2Se3 layer, leading to multiple tunneling resistance states. The tunneling magnetoresistance (TMR) and electroresistance (TER) of MFTJs are enhanced by the inserted h-BN layer, achieving an ON/OFF TER ratio of 4188% as well as a TMR ratio of 581% with a much lower resistance area. The giant tunneling resistance ratio, multiple resistance states, and ultra-low energy consumption in 2D FE-based MFTJs suggest their great potential in non-destructive non-volatile memories.
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Affiliation(s)
- Yancong Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Zhiyuan Tang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Minzhi Dai
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xin Luo
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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17
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Ali F, Abbas A, Wu G, Daaim M, Akhtar A, Kim KH, Yang B. Novel Fluorite-Structured Materials for Solid-State Refrigeration. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200133. [PMID: 35445535 DOI: 10.1002/smll.202200133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2022] [Revised: 02/24/2022] [Indexed: 06/14/2023]
Abstract
Refrigeration based on the electrocaloric effect can offer many advantages over conventional cooling technologies in terms of efficiency, size, weight, and power source. The discovery of ferroelectric and antiferroelectric properties in fluorite-based materials in 2011 has led to diverse applications related to memory (e.g., ferroelectric tunnel junctions, nonvolatile memory, and field-effect transistors) and energy fields (e.g., energy storage and harvesting, electrocaloric refrigeration, and infrared detection). Fluorite-based materials exhibit several properties not shared by most conventional materials (such as in terms of compatibility with complementary metal-oxide semiconductors and 3D nanostructures, deposition thickness at the nanometer scale, and simple composition). Here, the electrocaloric refrigeration properties of fluorite-based ferroelectric/antiferroelectric materials are reviewed by focusing on the advantages of ZrO2 - and HfO2 -based materials (e.g., relative to conventional perovskite- and polymer-based counterparts). Finally, the recent progress made in this research field are also discussed along with its future perspectives.
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Affiliation(s)
- Faizan Ali
- School of Information and Intelligence Engineering, University of Sanya, Sanya, 572022, P. R. China
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, P. R. China
| | - Akmal Abbas
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, P. R. China
| | - Guoyi Wu
- Institute of Earthquake Engineering, Faculty of Infrastructure Engineering, Dalian University of Technology, Dalian, Liaoning, 116024, China
| | - Muhammad Daaim
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, P. R. China
| | - Awais Akhtar
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
| | - Ki-Hyun Kim
- Department of Civil and Environmental Engineering, Hanyang University, 222 Wangsimni-Ro, Seoul, 04763, Republic of Korea
| | - Boxiong Yang
- School of Information and Intelligence Engineering, University of Sanya, Sanya, 572022, P. R. China
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18
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Wang J, Zhu R, Ma J, Yang H, Fan Y, Chen M, Sun Y, Gao P, Huang H, Zhang J, Ma J, Nan CW. Photoenhanced Electroresistance at Dislocation-Mediated Phase Boundary. ACS APPLIED MATERIALS & INTERFACES 2022; 14:18662-18670. [PMID: 35430815 DOI: 10.1021/acsami.1c25259] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ferroelectric tunneling junctions have attracted intensive research interest due to their potential applications in high-density data storage and neural network computing. However, the prerequisite of an ultrathin ferroelectric tunneling barrier makes it a great challenge to simultaneously implement the robust polarization and negligible leakage current in a ferroelectric thin film, both of which are significant for ferroelectric tunneling junctions with reliable operating performance. Here, we observe a large tunneling electroresistance effect of ∼1.0 × 104% across the BiFeO3 nanoisland edge, where the intrinsic ferroelectric polarization of the nanoisland makes a major contribution to tuning the barrier height. This phenomenon is beneficial from the artificially designed tunneling barrier between the nanoscale top electrode and the inclined conducting phase boundary, which is located between the rhombohedral-island and tetragonal-film matrix and arranged with the dislocation array. More significantly, the tunneling electroresistance effect is further improved to ∼1.6 × 104% by the introduction of photoinduced carriers, which are separated by the flexoelectric field arising from the dislocations.
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Affiliation(s)
- Jing Wang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Ruixue Zhu
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Ji Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
- School of Material Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093, China
| | - Huayu Yang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yuanyuan Fan
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Mingfeng Chen
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yuanwei Sun
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Peng Gao
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Houbing Huang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Jing Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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19
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Dong G, Wang T, Liu H, Zhang Y, Zhao Y, Hu Z, Ren W, Ye ZG, Shi K, Zhou Z, Liu M, Pan J. Strain-Induced Magnetoelectric Coupling in Fe 3O 4/BaTiO 3 Nanopillar Composites. ACS APPLIED MATERIALS & INTERFACES 2022; 14:13925-13931. [PMID: 35271247 DOI: 10.1021/acsami.2c00058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Magnetoelectric coupling properties are limited to the substrate clamping effect in traditional ferroelectric/ferromagnetic heterostructures. Here, Fe3O4/BaTiO3 nanopillar composites are successfully constructed. The well-ordered BaTiO3 nanopillar arrays are prepared through template-assisted pulsed laser deposition. The Fe3O4 layer is coated on BaTiO3 nanopillar arrays by atomic layer deposition. The nanopillar arrays and heterostructure are confirmed by scanning electron microscopy and transmission electron microscopy. A large thermally driven magnetoelectric coupling coefficient of 395 Oe °C-1 near the phase transition of BaTiO3 (orthorhombic to rhombohedral) is obtained, indicating a strong strain-induced magnetoelectric coupling effect. The enhanced magnetoelectric coupling effect originated from the reduced substrate clamping effect and increased the interface area in nanopillar structures. This work opens a door toward cutting-edge potential applications in spintronic devices.
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Affiliation(s)
- Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Tian Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Haixia Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yijun Zhang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yanan Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhongqiang Hu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zuo-Guang Ye
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
- Department of Chemistry & 4D LABS, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - Keqing Shi
- Department of Intensive Care, Precision Medicine Center Laboratory, The First Affiliated Hospital of Wenzhou Medical University, Wenzhou 325000, China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jingye Pan
- Department of Intensive Care, Precision Medicine Center Laboratory, The First Affiliated Hospital of Wenzhou Medical University, Wenzhou 325000, China
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20
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Zhang F, Li X, Han S, Wu F, Liu X, Sun Z, Luo J. Bulk Single Crystal Growth of a Two-Dimensional Halide Perovskite Ferroelectric for Highly Polarized-Sensitive Photodetection ※. ACTA CHIMICA SINICA 2022. [DOI: 10.6023/a21120613] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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21
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Chi X, Guo R, Xiong J, Ren L, Peng X, Tay BK, Chen J. Enhanced Tunneling Magnetoresistance Effect via Ferroelectric Control of Interface Electronic/Magnetic Reconstructions. ACS APPLIED MATERIALS & INTERFACES 2021; 13:56638-56644. [PMID: 34786928 DOI: 10.1021/acsami.1c15836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Magnetic tunnel junctions (MTJs) with tunable tunneling magnetoresistances (TMR) have already been proven to have great potential for spintronics. Especially, when ferroelectric materials are used as insulating barriers, more novel functions of MTJs can be realized due to interface magnetoelectric coupling. Here, we demonstrate a very large ferroelectric modulation of TMR (as high as 570% in low-resistance state) in the ferroelectric/magnetic La0.5Sr0.5MnO3/BaTiO3 (LSMO/BTO) junctions and find robust interfacial electronic and magnetic reconstructions via ferroelectric polarization switching. Through electrical, magnetic, and optical measurements combined with X-ray absorption and magnetic circular dichroism, we reveal that the interfacial electronic and magnetic (ferromagnetic/antiferromagnetic phase transition) reconstructions originate from strong electromagnetic coupling between BTO and LSMO at the interface and are driven by the modulation of hole/electron doping at the interface of LSMO/BTO through ferroelectric polarization switching. As a result, the ferroelectrically controlled interface barrier height and width and spin filter effect enable a giant electrical modulation of TMR. Our results shed new light on the intrinsic mechanisms governing magnetoelectric coupling and offering a new route to enhance magnetoelectric coupling for spin control in spintronic devices.
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Affiliation(s)
- Xiao Chi
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510641, China
| | - Rui Guo
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
- UMI 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, 637553 Singapore
| | - Juxia Xiong
- School of Environment and Energy, South China University of Technology, Guangzhou 510006, P.R. China
| | - Lizhu Ren
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 Singapore
| | - Xinwen Peng
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510641, China
| | - Beng Kang Tay
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
- UMI 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, 637553 Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
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22
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Liu XL, Li D, Zhao HX, Dong XW, Long LS, Zheng LS. Inorganic-Organic Hybrid Molecular Materials: From Multiferroic to Magnetoelectric. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004542. [PMID: 33829543 DOI: 10.1002/adma.202004542] [Citation(s) in RCA: 30] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2020] [Revised: 11/07/2020] [Indexed: 06/12/2023]
Abstract
Inorganic-organic hybrid molecular multiferroic and magnetoelectric materials, similar to multiferroic oxide compounds, have recently attracted increasing attention because they exhibit diverse architectures, a flexible framework, fascinating physics, and potential magnetoelectric functionalities in novel multifunctional devices such as energy transformation devices, sensors, and information storage systems. Herein, the classification of multiferroicity and magnetoelectricity is briefly outlined and then the recent advances in the multiferroicity and magnetoelectricity of inorganic-organic hybrid molecular materials, particularly magnetoelectricity and the relevant magnetoelectric mechanisms and their categories are summarized. In addition, a personal perspective and an outlook are provided.
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Affiliation(s)
- Xiao-Lin Liu
- Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory of Physical Chemistry of Solid Surfaces, and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Dong Li
- Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory of Physical Chemistry of Solid Surfaces, and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Hai-Xia Zhao
- Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory of Physical Chemistry of Solid Surfaces, and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Xin-Wei Dong
- Department of Physics and Institute of Theoretical Physics and Astrophysics, Xiamen University, Xiamen, 361005, P. R. China
| | - La-Sheng Long
- Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory of Physical Chemistry of Solid Surfaces, and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Lan-Sun Zheng
- Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory of Physical Chemistry of Solid Surfaces, and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, P. R. China
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23
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Kelley KP, Ren Y, Dasgupta A, Kavle P, Jesse S, Vasudevan RK, Cao Y, Martin LW, Kalinin SV. Probing Metastable Domain Dynamics via Automated Experimentation in Piezoresponse Force Microscopy. ACS NANO 2021; 15:15096-15103. [PMID: 34495651 DOI: 10.1021/acsnano.1c05455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The dynamics of complex topological defects in ferroelectric materials is explored using automated experimentation in piezoresponse force microscopy. Specifically, a complex trigger system (i.e., "FerroBot") is employed to study metastable domain-wall dynamics in Pb0.6Sr0.4TiO3 thin films. Several regimes of superdomain wall dynamics have been identified, including smooth domain-wall motion and significant reconfiguration of the domain structures. We have further demonstrated that microscopic mechanisms of the domain-wall dynamics can be identified; i.e., domain-wall bending can be separated from irreversible domain reconfiguration regimes. In conjunction, phase-field modeling was used to corroborate the observed mechanisms. As such, the observed superdomain dynamics can provide a model system for classical ferroelectric dynamics, much like how colloidal crystals provide a model system for atomic and molecular systems.
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Affiliation(s)
- Kyle P Kelley
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Yao Ren
- Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
| | - Arvind Dasgupta
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, California 94720, United States
| | - Pravin Kavle
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, California 94720, United States
| | - Stephen Jesse
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Rama K Vasudevan
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Ye Cao
- Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Sergei V Kalinin
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
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24
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Zhang Y, Li M, Xu G. An In(III)‐Based Organic‐Inorganic Hybrid Compound (C
3
H
7
NH
3
)
3
[InCl
5
(H
2
O)]Cl with Dielectric Response Behavior Derived from Order‐Disorder Changes of
n
‐Propylammonium Cations. Eur J Inorg Chem 2021. [DOI: 10.1002/ejic.202100547] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Yin‐Qiang Zhang
- State Key Laboratory of Chemistry and Utilization of Carbon Based Energy Resources Key Laboratory of Advanced Functional Materials, Autonomous Region Institute of Applied Chemistry, College of Chemistry Xinjiang University Urumqi 830046 Xinjiang PR China
| | - Min Li
- State Key Laboratory of Chemistry and Utilization of Carbon Based Energy Resources Key Laboratory of Advanced Functional Materials, Autonomous Region Institute of Applied Chemistry, College of Chemistry Xinjiang University Urumqi 830046 Xinjiang PR China
| | - Guan‐Cheng Xu
- State Key Laboratory of Chemistry and Utilization of Carbon Based Energy Resources Key Laboratory of Advanced Functional Materials, Autonomous Region Institute of Applied Chemistry, College of Chemistry Xinjiang University Urumqi 830046 Xinjiang PR China
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25
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Zhang Q, Li X, Zhu J. Direct Observation of Interface-Dependent Multidomain State in the BaTiO 3 Tunnel Barrier of a Multiferroic Tunnel Junction Memristor. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43641-43647. [PMID: 34473930 DOI: 10.1021/acsami.1c11661] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Multiferroic tunnel junctions (MFTJs), normally consisting of a four-state resistance, have been studied extensively as a potential candidate for nonvolatile memory devices. More interestingly, the MFTJs whose resistance can be tuned continuously with applied voltage were also reported recently. Since the performance of MFTJs is closely related to their interfacial structures, it is necessary to investigate MFTJs at the atomic scale. In this work, atomic-resolution HAADF, ABF, and EELS of the La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 MFTJ memristor have been obtained with aberration-corrected scanning transmission electron microscopy (STEM). These results demonstrate varied degree of interfacial cation intermixing at the bottom BTO/LSMO interface, which has a direct influence on the polarization of the ferroelectric barrier BTO and the electronic structure of Mn near the interfaces. We also took advantage of a simplified model to explain the relation between the interfacial behavior and polarization states, which could be a contributing factor to the transport properties of this MFTJ.
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Affiliation(s)
- Qiqi Zhang
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing 100084, People's Republic of China
- Ji Hua Laboratory, Foshan 528000, People's Republic of China
| | - Xiaoguang Li
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230000, People's Republic of China
| | - Jing Zhu
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing 100084, People's Republic of China
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26
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Wang J, Chen A, Li P, Zhang S. Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure. MATERIALS 2021; 14:ma14164623. [PMID: 34443144 PMCID: PMC8401036 DOI: 10.3390/ma14164623] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/28/2021] [Revised: 07/24/2021] [Accepted: 08/13/2021] [Indexed: 12/03/2022]
Abstract
Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.
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Affiliation(s)
- Jiawei Wang
- College of Science, Zhejiang University of Technology, Hangzhou 310023, China;
| | - Aitian Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
- Correspondence: (A.C.); (P.L.); (S.Z.)
| | - Peisen Li
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
- Correspondence: (A.C.); (P.L.); (S.Z.)
| | - Sen Zhang
- College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China
- Correspondence: (A.C.); (P.L.); (S.Z.)
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27
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Sarott MF, Gradauskaite E, Nordlander J, Strkalj N, Trassin M. In situmonitoring of epitaxial ferroelectric thin-film growth. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:293001. [PMID: 33873174 DOI: 10.1088/1361-648x/abf979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2019] [Accepted: 04/19/2021] [Indexed: 06/12/2023]
Abstract
In ferroelectric thin films, the polarization state and the domain configuration define the macroscopic ferroelectric properties such as the switching dynamics. Engineering of the ferroelectric domain configuration during synthesis is in permanent evolution and can be achieved by a range of approaches, extending from epitaxial strain tuning over electrostatic environment control to the influence of interface atomic termination. Exotic polar states are now designed in the technologically relevant ultrathin regime. The promise of energy-efficient devices based on ultrathin ferroelectric films depends on the ability to create, probe, and manipulate polar states in ever more complex epitaxial architectures. Because most ferroelectric oxides exhibit ferroelectricity during the epitaxial deposition process, the direct access to the polarization emergence and its evolution during the growth process, beyond the realm of existing structuralin situdiagnostic tools, is becoming of paramount importance. We review the recent progress in the field of monitoring polar states with an emphasis on the non-invasive probes allowing investigations of polarization during the thin film growth of ferroelectric oxides. A particular importance is given to optical second harmonic generationin situ. The ability to determine the net polarization and domain configuration of ultrathin films and multilayers during the growth of multilayers brings new insights towards a better understanding of the physics of ultrathin ferroelectrics and further control of ferroelectric-based heterostructures for devices.
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Affiliation(s)
- Martin F Sarott
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
| | - Elzbieta Gradauskaite
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
| | - Johanna Nordlander
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
| | - Nives Strkalj
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
| | - Morgan Trassin
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
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28
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Chen J, Dong S. Manipulation of Magnetic Domain Walls by Ferroelectric Switching: Dynamic Magnetoelectricity at the Nanoscale. PHYSICAL REVIEW LETTERS 2021; 126:117603. [PMID: 33798385 DOI: 10.1103/physrevlett.126.117603] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2020] [Revised: 11/21/2020] [Accepted: 02/11/2021] [Indexed: 06/12/2023]
Abstract
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to a fundamental contradiction between polarity and magnetism. Here, we propose a mechanism to manipulate magnetic domain walls in ferrimagnetic or ferromagnetic multiferroics using the electric field. Different from those studies based on static domain-level couplings, here the magnetoelectric coupling relies on the collaborative spin dynamics around domain walls. Accompanying the reversal of spin chirality driven by polarization switching, a "rolling-downhill"-like motion of the domain wall is achieved in nanoscale, which tunes the magnetization locally. Our mechanism opens an alternative route to the pursuit of practical and fast converse magnetoelectric functions via spin dynamics.
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Affiliation(s)
- Jun Chen
- School of Physics, Southeast University, Nanjing 211189, China
| | - Shuai Dong
- School of Physics, Southeast University, Nanjing 211189, China
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29
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Liu J, Laguta VV, Inzani K, Huang W, Das S, Chatterjee R, Sheridan E, Griffin SM, Ardavan A, Ramesh R. Coherent electric field manipulation of Fe 3+ spins in PbTiO 3. SCIENCE ADVANCES 2021; 7:7/10/eabf8103. [PMID: 33658210 PMCID: PMC7929503 DOI: 10.1126/sciadv.abf8103] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2020] [Accepted: 01/19/2021] [Indexed: 06/12/2023]
Abstract
Magnetoelectrics, materials that exhibit coupling between magnetic and electric degrees of freedom, not only offer a rich environment for studying the fundamental materials physics of spin-charge coupling but also present opportunities for future information technology paradigms. We present results of electric field manipulation of spins in a ferroelectric medium using dilute ferric ion-doped lead titanate as a model system. Combining first-principles calculations and electron paramagnetic resonance (EPR), we show that the ferric ion spins are preferentially aligned perpendicular to the ferroelectric polar axis, which we can manipulate using an electric field. We also demonstrate coherent control of the phase of spin superpositions by applying electric field pulses during time-resolved EPR measurements. Our results suggest a new pathway toward the manipulation of spins for quantum and classical spintronics.
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Affiliation(s)
- Junjie Liu
- CAESR, Department of Physics, University of Oxford, The Clarendon Laboratory, Parks Road, Oxford OX1 3PU, UK
| | - Valentin V Laguta
- Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10, 162 00 Prague, Czech Republic
| | - Katherine Inzani
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Weichuan Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
| | - Sujit Das
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
- Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Ruchira Chatterjee
- Molecular Biophysics and Integrated Bioimaging Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Evan Sheridan
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Sinéad M Griffin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Arzhang Ardavan
- CAESR, Department of Physics, University of Oxford, The Clarendon Laboratory, Parks Road, Oxford OX1 3PU, UK.
| | - Ramamoorthy Ramesh
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
- Department of Physics, University of California, Berkeley, CA 94720, USA
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30
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Guo R, Tao L, Li M, Liu Z, Lin W, Zhou G, Chen X, Liu L, Yan X, Tian H, Tsymbal EY, Chen J. Interface-engineered electron and hole tunneling. SCIENCE ADVANCES 2021; 7:7/13/eabf1033. [PMID: 33762343 PMCID: PMC7990336 DOI: 10.1126/sciadv.abf1033] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/04/2020] [Accepted: 02/05/2021] [Indexed: 06/12/2023]
Abstract
Although the phenomenon of tunneling has been known since the advent of quantum mechanics, it continues to enrich our understanding of many fields of science. Commonly, this effect is described in terms of electrons traversing the potential barrier that exceeds their kinetic energy due to the wave nature of electrons. This picture of electron tunneling fails, however, for tunnel junctions, where the Fermi energy lies sufficiently close to the insulator valence band, in which case, hole tunneling dominates. We demonstrate the deterministic control of electron and hole tunneling in interface-engineered Pt/BaTiO3/La0.7Sr0.3MnO3 ferroelectric tunnel junctions by reversal of tunneling electroresistance. Our electrical measurements, electron microscopy and spectroscopy characterization, and theoretical modeling unambiguously point out to electron or hole tunneling regimes depending on interface termination. The interface control of the tunneling regime offers designed functionalities of electronic devices.
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Affiliation(s)
- Rui Guo
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore, Singapore
- College of Electron and Information Engineering, Hebei University, Baoding 071002, China
| | - Lingling Tao
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588-0299, USA
| | - Ming Li
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588-0299, USA
| | - Zhongran Liu
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Weinan Lin
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore, Singapore
| | - Guowei Zhou
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore, Singapore
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China
| | - Xiaoxin Chen
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Liang Liu
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore, Singapore
| | - Xiaobing Yan
- College of Electron and Information Engineering, Hebei University, Baoding 071002, China
| | - He Tian
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588-0299, USA.
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore, Singapore.
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31
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Su Y, Li X, Zhu M, Zhang J, You L, Tsymbal EY. Van der Waals Multiferroic Tunnel Junctions. NANO LETTERS 2021; 21:175-181. [PMID: 33264014 DOI: 10.1021/acs.nanolett.0c03452] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for nonvolatile memory devices. So far, however, all of the existing MFTJs have been based on perovskite-oxide heterostructures limited by a relatively high resistance-area (RA) product unfavorable for practical applications. Here, using first-principles calculations, we explore spin-dependent transport properties of van der Waals (vdW) MFTJs which consist of two-dimensional (2D) ferromagnetic FenGeTe2 (n = 3, 4, 5) electrodes and 2D ferroelectric In2Se3 barrier layers. We demonstrate that such FemGeTe2/In2Se3/FenGeTe2 (m, n = 3, 4, 5; m ≠ n) MFTJs exhibit multiple nonvolatile resistance states associated with different polarization orientation of the ferroelectric In2Se3 layer and magnetization alignment of the two ferromagnetic FenGeTe2 layers. We find a remarkably low RA product (less than 1 Ω·μm2) which makes the proposed vdW MFTJs superior to the conventional MFTJs in terms of their promise for nonvolatile memory applications.
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Affiliation(s)
- Yurong Su
- School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074 Wuhan, China
| | - Xinlu Li
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China
| | - Meng Zhu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China
| | - Jia Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China
| | - Long You
- School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074 Wuhan, China
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, United States
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32
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Yuan Y, Fang YW, Zhao YF, Duan CG. Intrinsic asymmetric ferroelectricity induced giant electroresistance in ZnO/BaTiO 3 superlattice. RSC Adv 2021; 11:2353-2358. [PMID: 35424198 PMCID: PMC8693702 DOI: 10.1039/d0ra09228b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/29/2020] [Accepted: 12/31/2020] [Indexed: 11/21/2022] Open
Abstract
Here, we combine the piezoelectric wurtzite ZnO and the ferroelectric (111) BaTiO3 as a hexagonal closed-packed structure and report a systematic theoretical study on the ferroelectric behavior induced by the interface of ZnO/BaTiO3 films and the transport properties between the SrRuO3 electrodes. The parallel and antiparallel polarizations of ZnO and BaTiO3 can lead to intrinsic asymmetric ferroelectricity in the ZnO/BaTiO3 superlattice. Using first-principles calculations we demonstrate four different configurations for the ZnO/BaTiO3/ZnO superlattice with respective terminations and find one most favorable for the stable existence of asymmetric ferroelectricity in thin films with thickness less than 4 nm. Combining density functional theory calculations with non equilibrium Green's function formalism, we investigate the electron transport properties of SrRuO3/ZnO/BaTiO3/ZnO/SrRuO3 FTJ and SrRuO3/ZnO/BaTiO3/SrRuO3 FTJ, and reveal a high TER effect of 581% and 112% respectively. These findings provide an important insight into the understanding of how the interface affects the polarization in the ZnO/BaTiO3 superlattice and may suggest a controllable and unambiguous way to build ferroelectric and multiferroic tunnel junctions.
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Affiliation(s)
- Ye Yuan
- State Key Laboratory of Precision Spectroscopy, Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University Shanghai 200241 China
| | - Yue-Wen Fang
- Laboratory for Materials and Structures & World Research Hub Initiative, Institute of Innovative Research, Tokyo Institute of Technology 4259 Nagatsuta, Midori Yokohama 226-8503 Japan
| | - Yi-Feng Zhao
- State Key Laboratory of Precision Spectroscopy, Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University Shanghai 200241 China
| | - Chun-Gang Duan
- State Key Laboratory of Precision Spectroscopy, Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics, East China Normal University Shanghai 200241 China
- Collaborative Innovation Center of Extreme Optics, Shanxi University Taiyuan Shanxi 030006 China
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33
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Gao T, Pan Z, Cai Z, Zheng J, Tang C, Yuan S, Zhao SQ, Bai H, Yang Y, Shi J, Xiao Z, Liu J, Hong W. Electric field-induced switching among multiple conductance pathways in single-molecule junctions. Chem Commun (Camb) 2021; 57:7160-7163. [PMID: 34184023 DOI: 10.1039/d1cc02111g] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Here, we report the switching among multiple conductance pathways achieved by sliding the scanning tunneling microscope tip among different binding sites under different electric fields. With an increase in the electric field, high molecular conductance states appear, suggesting the formation of different configurations in single-molecule junctions. The switch can be operated in situ and reversibly, which is also confirmed by the apparent conductance conversion in I-V measurements. Theoretical simulations also agree well with the experimental results, which implies that the electric field enables the possibility to trigger switching in single-molecule junctions.
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Affiliation(s)
- Tengyang Gao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
| | - Zhichao Pan
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
| | - Zhuanyun Cai
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
| | - Jueting Zheng
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
| | - Chun Tang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
| | - Saisai Yuan
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
| | - Shi Qiang Zhao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
| | - Hua Bai
- College of Materials, Xiamen University, Xiamen 361005, China
| | - Yang Yang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
| | - Jia Shi
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
| | - Zongyuan Xiao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
| | - Junyang Liu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
| | - Wenjing Hong
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
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34
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Yang Y, Xi Z, Dong Y, Zheng C, Hu H, Li X, Jiang Z, Lu WC, Wu D, Wen Z. Spin-Filtering Ferroelectric Tunnel Junctions as Multiferroic Synapses for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2020; 12:56300-56309. [PMID: 33287535 DOI: 10.1021/acsami.0c16385] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
As nanoelectronic synapses, memristive ferroelectric tunnel junctions (FTJs) have triggered great interest due to the potential applications in neuromorphic computing for emulating biological brains. Here, we demonstrate multiferroic FTJ synapses based on the ferroelectric modulation of spin-filtering BaTiO3/CoFe2O4 composite barriers. Continuous conductance change with an ON/OFF current ratio of ∼54 400% and long-term memory with the spike-timing-dependent plasticity (STDP) of synaptic weight for Hebbian learning are achieved by controlling the polarization switching of BaTiO3. Supervised learning simulations adopting the STDP results as database for weight training are performed on a crossbar neural network and exhibit a high accuracy rate above 97% for recognition. The polarization switching also alters the band alignment of CoFe2O4 barrier relative to the electrodes, giving rise to the change of tunneling magnetoresistance ratio by about 10 times and even the reversal of its sign depending upon the resistance states. These results, especially the electrically switchable spin polarization, provide a new approach toward multiferroic neuromorphic devices with energy-efficient electrical manipulations through potential barrier design. In addition, the availability of spinel ferrite barriers epitaxially grown with ferroelectric oxides also expends the playground of FTJ devices for a broad scope of applications.
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Affiliation(s)
- Yihao Yang
- College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao 266071, China
| | - Zhongnan Xi
- National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Jiangsu Key Laboratory of Artificial Functional Materials and Collaborative Innovation Center for Advanced Materials, Nanjing University, Nanjing 210093, China
| | - Yuehang Dong
- School of Data Science and Software Engineering, Qingdao University, Qingdao 266071, China
| | - Chunyan Zheng
- College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao 266071, China
| | - Haihua Hu
- College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao 266071, China
| | - Xiaofei Li
- College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao 266071, China
| | - Zhizheng Jiang
- College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao 266071, China
| | - Wen-Cai Lu
- College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao 266071, China
| | - Di Wu
- National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Jiangsu Key Laboratory of Artificial Functional Materials and Collaborative Innovation Center for Advanced Materials, Nanjing University, Nanjing 210093, China
| | - Zheng Wen
- College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao 266071, China
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35
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Cao Q, Lü W, Wang XR, Guan X, Wang L, Yan S, Wu T, Wang X. Nonvolatile Multistates Memories for High-Density Data Storage. ACS APPLIED MATERIALS & INTERFACES 2020; 12:42449-42471. [PMID: 32812741 DOI: 10.1021/acsami.0c10184] [Citation(s) in RCA: 38] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attracted lots of attention over the past years. Owing to the capability to store data in more than a single bit (0 or 1), the storage density is dramatically enhanced without scaling down the memory cell, making memory devices more efficient and less expensive. Multistates in a single cell also provide an unconventional in-memory computing platform beyond the Von Neumann architecture and enable neuromorphic computing with low power consumption. In this review, an in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms of various types of NMSMs, including flash, magnetic random-access memory (MRAM), resistive random-access memory (RRAM), ferroelectric random-access memory (FeRAM), and phase-change memory (PCM). The intriguing properties and performance of these NMSMs, which are the key to realizing highly integrated memory hierarchy, are discussed and compared.
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Affiliation(s)
- Qiang Cao
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Weiming Lü
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - X Renshaw Wang
- School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Lan Wang
- School of Science, ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT University, Melbourne, Victoria 3001, Australia
| | - Shishen Yan
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
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36
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Surface-Step-Induced Magnetic Anisotropy in Epitaxial LSMO Deposited on Engineered STO Surfaces. MATERIALS 2020; 13:ma13184148. [PMID: 32957740 PMCID: PMC7560275 DOI: 10.3390/ma13184148] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/17/2020] [Revised: 09/11/2020] [Accepted: 09/11/2020] [Indexed: 01/13/2023]
Abstract
Changes in stoichiometry, temperature, strain and other parameters dramatically alter properties of LSMO perovskite. Thus, the sensitivity of LSMO may enable control of the magnetic properties of the film. This work demonstrates the capabilities of interface engineering to achieve the desired effects. Three methods of preparing STO substrates were conducted, i.e., using acid, buffer solution, and deionized water. The occurrence of terraces and their morphology depend on the preparation treatment. Terraces propagate on deposited layers and influence LSMO properties. The measurements show that anisotropy depends on the roughness of the substrate, the method of preparing the substrate, and oxygen treatment. The collected results suggest that the dipolar mechanism may be the source of LSMO anisotropy.
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37
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Deterministic reversal of single magnetic vortex circulation by an electric field. Sci Bull (Beijing) 2020; 65:1260-1267. [PMID: 36747413 DOI: 10.1016/j.scib.2020.04.008] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2020] [Revised: 02/23/2020] [Accepted: 03/27/2020] [Indexed: 02/08/2023]
Abstract
The ability to control magnetic vortex is critical for their potential applications in spintronic devices. Traditional methods including magnetic field, spin-polarized current etc. have been used to flip the core and/or reverse circulation of vortex. However, it is challenging for deterministic electric-field control of the single magnetic vortex textures with time-reversal broken symmetry and no planar magnetic anisotropy. Here it is reported that a deterministic reversal of single magnetic vortex circulation can be driven back and forth by a space-varying strain in multiferroic heterostructures, which is controlled by using a bi-axial pulsed electric field. Phase-field simulation reveals the mechanism of the emerging magnetoelastic energy with the space variation and visualizes the reversal pathway of the vortex. This deterministic electric-field control of the single magnetic vortex textures demonstrates a new approach to integrate the low-dimensional spin texture into the magnetoelectric thin film devices with low energy consumption.
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38
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Wang L, Liu S, Feng X, Zhang C, Zhu L, Zhai J, Qin Y, Wang ZL. Flexoelectronics of centrosymmetric semiconductors. NATURE NANOTECHNOLOGY 2020; 15:661-667. [PMID: 32572230 DOI: 10.1038/s41565-020-0700-y] [Citation(s) in RCA: 56] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2020] [Accepted: 04/27/2020] [Indexed: 06/11/2023]
Abstract
Interface engineering by local polarization using piezoelectric1-4, pyroelectric5,6 and ferroelectric7-9 effects has attracted considerable attention as a promising approach for tunable electronics/optoelectronics, human-machine interfacing and artificial intelligence. However, this approach has mainly been applied to non-centrosymmetric semiconductors, such as wurtzite-structured ZnO and GaN, limiting its practical applications. Here we demonstrate an electronic regulation mechanism, the flexoelectronics, which is applicable to any semiconductor type, expanding flexoelectricity10-13 to conventional semiconductors such as Si, Ge and GaAs. The inner-crystal polarization potential generated by the flexoelectric field serving as a 'gate' can be used to modulate the metal-semiconductor interface Schottky barrier and further tune charge-carrier transport. We observe a giant flexoelectronic effect in bulk centrosymmetric semiconductors of Si, TiO2 and Nb-SrTiO3 with high strain sensitivity (>2,650), largely outperforming state-of-the-art Si-nanowire strain sensors and even piezoresistive, piezoelectric and ferroelectric nanodevices14. The effect can be used to mechanically switch the electronics in the nanoscale with fast response (<4 ms) and high resolution (~0.78 nm). This opens up the possibility of realizing strain-modulated electronics in centrosymmetric semiconductors, paving the way for local polarization field-controlled electronics and high-performance electromechanical applications.
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Affiliation(s)
- Longfei Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, P. R. China
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA
| | - Shuhai Liu
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, P. R. China
| | - Xiaolong Feng
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, Singapore
| | - Chunli Zhang
- Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Department of Engineering Mechanics, Zhejiang University, Hangzhou, P. R. China
| | - Laipan Zhu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, P. R. China
| | - Junyi Zhai
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, P. R. China
| | - Yong Qin
- Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University, Gansu, P. R. China.
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, P. R. China.
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA.
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39
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Wen Z, Wu D. Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1904123. [PMID: 31583775 DOI: 10.1002/adma.201904123] [Citation(s) in RCA: 51] [Impact Index Per Article: 12.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2019] [Revised: 08/16/2019] [Indexed: 06/10/2023]
Abstract
Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in next-generation memories, owing to attractive advantages such as high-density of data storage, nondestructive readout, fast write/read access, and low energy consumption. Herein, recent progress regarding FTJ devices is reviewed with an emphasis on the modulation of the potential barrier. Electronic and ionic approaches that modulate the ferroelectric barriers themselves and/or induce extra barriers in electrodes or at ferroelectric/electrode interfaces are discussed with the enhancement of memory performance. Emerging physics, such as nanoscale ferroelectricity, resonant tunneling, and interfacial metallization, and the applications of FTJs in nonvolatile data storage, neuromorphic synapse emulation, and electromagnetic multistate memory are summarized. Finally, challenges and perspectives of FTJ devices are underlined.
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Affiliation(s)
- Zheng Wen
- College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao, 266071, China
- Collaborative Innovation Center for Advanced Materials, Nanjing University, Nanjing, 210093, China
| | - Di Wu
- National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Jiangsu Key Laboratory of Artificial Functional Materials and Collaborative Innovation Center for Advanced Materials, Nanjing University, Nanjing, 210093, China
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40
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Fang M, Wang Y, Wang H, Hou Y, Vetter E, Kou Y, Yang W, Yin L, Xiao Z, Li Z, Jiang L, Lee HN, Zhang S, Wu R, Xu X, Sun D, Shen J. Tuning the interfacial spin-orbit coupling with ferroelectricity. Nat Commun 2020; 11:2627. [PMID: 32457302 PMCID: PMC7250895 DOI: 10.1038/s41467-020-16401-7] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2019] [Accepted: 04/28/2020] [Indexed: 11/26/2022] Open
Abstract
Detection and manipulation of spin current lie in the core of spintronics. Here we report an active control of a net spin Hall angle, θSHE(net), in Pt at an interface with a ferroelectric material PZT (PbZr0.2Ti0.8O3), using its ferroelectric polarization. The spin Hall angle in the ultra-thin Pt layer is measured using the inverse spin Hall effect with a pulsed tunneling current from a ferromagnetic La0.67Sr0.33MnO3 electrode. The effect of the ferroelectric polarization on θSHE(net) is enhanced when the thickness of the Pt layer is reduced. When the Pt layer is thinner than 6 nm, switching the ferroelectric polarization even changes the sign of θSHE(net). This is attributed to the reversed polarity of the spin Hall angle in the 1st-layer Pt at the PZT/Pt interface when the ferroelectric polarization is inverted, as supported by the first-principles calculations. These findings suggest a route for designing future energy efficient spin-orbitronic devices using ferroelectric control. The spin Hall angle (SHA) is a measure of the efficiency for converting a charge to a spin current is still challenging to tune in situ. Here, the authors demonstrate by introducing a ferroelectric (FE) material in a ferromagnetic/heavy metal stack the SHA can be voltage controled via the polarization of the FE layer.
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Affiliation(s)
- Mei Fang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.,Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 410083, Changsha, Hunan, China
| | - Yanmei Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Hui Wang
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 410083, Changsha, Hunan, China.,Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Yusheng Hou
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Eric Vetter
- Department of Physics, North Carolina State University, Raleigh, NC, 27695, USA.,Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Yunfang Kou
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Wenting Yang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Lifeng Yin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.,Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, 200433, Shanghai, China.,Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
| | - Zhu Xiao
- School of Materials Science and Engineering, Central South University, 410083, Changsha, Hunan, China
| | - Zhou Li
- School of Materials Science and Engineering, Central South University, 410083, Changsha, Hunan, China
| | - Lu Jiang
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Ho Nyung Lee
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Shufeng Zhang
- Department of Physics, University of Arizona, Tucson, AZ, 85721, USA
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Xiaoshan Xu
- Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA.
| | - Dali Sun
- Department of Physics, North Carolina State University, Raleigh, NC, 27695, USA. .,Organic and Carbon Electronics Lab (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA.
| | - Jian Shen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China. .,Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, 200433, Shanghai, China. .,Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China.
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41
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Rouco V, Hage RE, Sander A, Grandal J, Seurre K, Palermo X, Briatico J, Collin S, Trastoy J, Bouzehouane K, Buzdin AI, Singh G, Bergeal N, Feuillet-Palma C, Lesueur J, Leon C, Varela M, Santamaría J, Villegas JE. Quasiparticle tunnel electroresistance in superconducting junctions. Nat Commun 2020; 11:658. [PMID: 32005810 PMCID: PMC6994500 DOI: 10.1038/s41467-020-14379-w] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2019] [Accepted: 12/30/2019] [Indexed: 11/13/2022] Open
Abstract
The term tunnel electroresistance (TER) denotes a fast, non-volatile, reversible resistance switching triggered by voltage pulses in ferroelectric tunnel junctions. It is explained by subtle mechanisms connected to the voltage-induced reversal of the ferroelectric polarization. Here we demonstrate that effects functionally indistinguishable from the TER can be produced in a simpler junction scheme—a direct contact between a metal and an oxide—through a different mechanism: a reversible redox reaction that modifies the oxide’s ground-state. This is shown in junctions based on a cuprate superconductor, whose ground-state is sensitive to the oxygen stoichiometry and can be tracked in operando via changes in the conductance spectra. Furthermore, we find that electrochemistry is the governing mechanism even if a ferroelectric is placed between the metal and the oxide. Finally, we extend the concept of electroresistance to the tunnelling of superconducting quasiparticles, for which the switching effects are much stronger than for normal electrons. Besides providing crucial understanding, our results provide a basis for non-volatile Josephson memory devices. The non-volatile switching of tunnel electroresistance in ferroelectric junctions provides the basis for memory and neuromorphic computing devices. Rouco et al. show tunnel electroresistance in superconductor-based junctions that arises from a redox rather than ferroelectric mechanism and is enhanced by superconductivity.
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Affiliation(s)
- V Rouco
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France.,Grupo de Física de Materiales Complejos, Dpto. Física de Materiales, Universidad Complutense de Madrid, 28040, Madrid, Spain
| | - R El Hage
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - A Sander
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - J Grandal
- Grupo de Física de Materiales Complejos, Dpto. Física de Materiales, Universidad Complutense de Madrid, 28040, Madrid, Spain
| | - K Seurre
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - X Palermo
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - J Briatico
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - S Collin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - J Trastoy
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - K Bouzehouane
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - A I Buzdin
- Université de Bordeaux, LOMA UMR CNRS 5798, F-33405, Talence, France
| | - G Singh
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, 75005, Paris, France
| | - N Bergeal
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, 75005, Paris, France
| | - C Feuillet-Palma
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, 75005, Paris, France
| | - J Lesueur
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, 75005, Paris, France
| | - C Leon
- Grupo de Física de Materiales Complejos, Dpto. Física de Materiales, Universidad Complutense de Madrid, 28040, Madrid, Spain
| | - M Varela
- Grupo de Física de Materiales Complejos, Dpto. Física de Materiales, Universidad Complutense de Madrid, 28040, Madrid, Spain
| | - J Santamaría
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France.,Grupo de Física de Materiales Complejos, Dpto. Física de Materiales, Universidad Complutense de Madrid, 28040, Madrid, Spain
| | - Javier E Villegas
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France.
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Yin L, Mi W. Progress in BiFeO 3-based heterostructures: materials, properties and applications. NANOSCALE 2020; 12:477-523. [PMID: 31850428 DOI: 10.1039/c9nr08800h] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.
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Affiliation(s)
- Li Yin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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43
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Liu S, Wang L, Feng X, Liu J, Qin Y, Wang ZL. Piezotronic Tunneling Junction Gated by Mechanical Stimuli. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1905436. [PMID: 31643113 DOI: 10.1002/adma.201905436] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2019] [Revised: 10/07/2019] [Indexed: 06/10/2023]
Abstract
Tunneling junction is used in many devices such as high-frequency oscillators, nonvolatile memories, and magnetic field sensors. In these devices, modulation on the barrier width and/or height is usually realized by electric field or magnetic field. Here, a new piezotronic tunneling junction (PTJ) principle, in which the quantum tunneling is controlled/tuned by externally applied mechanical stimuli, is proposed. In these metal/insulator/piezoelectric semiconductor PTJs, such as Pt/Al2 O3 /p-GaN, the height and the width of the tunneling barriers can be mechanically modulated via the piezotronic effect. The tunneling current characteristics of PTJs exhibit critical behavior as a function of external mechanical stimuli, which results in high sensitivity (≈5.59 mV MPa-1 ), giant switching (>105 ), and fast response (≈4.38 ms). Moreover, the mechanical controlling of tunneling transport in PTJs with various thickness of Al2 O3 is systematically investigated. The high performance observed with these metal/insulator/piezoelectric semiconductor PTJs suggest their great potential in electromechanical technology. This study not only demonstrates dynamic mechanical controlling of quantum tunneling, but also paves a way for adaptive interaction between quantum tunneling and mechanical stimuli, with potential applications in the field of ultrasensitive press sensor, human-machine interface, and artificial intelligence.
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Affiliation(s)
- Shuhai Liu
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi, 710071, China
| | - Longfei Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Xiaolong Feng
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Jinmei Liu
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi, 710071, China
| | - Yong Qin
- Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University, Lanzhou, Gansu, 730000, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
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44
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Chen A, Zhao Y, Wen Y, Pan L, Li P, Zhang XX. Full voltage manipulation of the resistance of a magnetic tunnel junction. SCIENCE ADVANCES 2019; 5:eaay5141. [PMID: 31853501 PMCID: PMC6910833 DOI: 10.1126/sciadv.aay5141] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/25/2019] [Accepted: 10/21/2019] [Indexed: 06/10/2023]
Abstract
One of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage. This voltage-generated localized strain has the ability to modify the magnetic anisotropy of the free layer effectively. By sequentially applying voltages to these two pairs of electrodes, we successively and unidirectionally rotate the magnetization of the free layer in the magnetic tunnel junctions to complete reversible 180° magnetization switching. Thus, we accomplish a giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field. Our results are important for exploring voltage control of magnetism and low-power spintronic devices.
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Affiliation(s)
- Aitian Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Yuelei Zhao
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Yan Wen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Long Pan
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
| | - Peisen Li
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
| | - Xi-Xiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
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45
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Li L, Xie L, Pan X. Real-time studies of ferroelectric domain switching: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2019; 82:126502. [PMID: 31185460 DOI: 10.1088/1361-6633/ab28de] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.
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Affiliation(s)
- Linze Li
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, United States of America
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46
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Strkalj N, De Luca G, Campanini M, Pal S, Schaab J, Gattinoni C, Spaldin NA, Rossell MD, Fiebig M, Trassin M. Depolarizing-Field Effects in Epitaxial Capacitor Heterostructures. PHYSICAL REVIEW LETTERS 2019; 123:147601. [PMID: 31702200 DOI: 10.1103/physrevlett.123.147601] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2018] [Revised: 04/08/2019] [Indexed: 06/10/2023]
Abstract
We identify a transient enhancement of the depolarizing field, leading to an unexpected quench of net polarization, during the growth of a prototypical metal-ferroelectric-metal epitaxial system made of BaTiO_{3} and SrRuO_{3}. Reduced conductivity and, hence, charge screening efficiency in the early growth stage of the SrRuO_{3} top electrode promotes a breakdown of ferroelectric BaTiO_{3} into domains. We demonstrate how a thermal annealing procedure can recover the single-domain state. By tracking the polarization state in situ, using optical second harmonic generation, we bring new understanding to interface-related electrostatic effects in ferroelectric capacitors.
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Affiliation(s)
- N Strkalj
- Department of Materials, ETH Zurich, CH-8093 Zürich, Switzerland
| | - G De Luca
- Department of Materials, ETH Zurich, CH-8093 Zürich, Switzerland
| | - M Campanini
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - S Pal
- Department of Materials, ETH Zurich, CH-8093 Zürich, Switzerland
| | - J Schaab
- Department of Materials, ETH Zurich, CH-8093 Zürich, Switzerland
| | - C Gattinoni
- Department of Materials, ETH Zurich, CH-8093 Zürich, Switzerland
| | - N A Spaldin
- Department of Materials, ETH Zurich, CH-8093 Zürich, Switzerland
| | - M D Rossell
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - M Fiebig
- Department of Materials, ETH Zurich, CH-8093 Zürich, Switzerland
| | - M Trassin
- Department of Materials, ETH Zurich, CH-8093 Zürich, Switzerland
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47
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Liu T, Wei X, Cao J. Modulation of magnetocrystalline anisotropy in FePt/PbTiO 3 heterostructures by ferroelectric polarization. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:395801. [PMID: 31239422 DOI: 10.1088/1361-648x/ab2cb7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Reducing the power consumption required for magnetization reversal is an urgent problem for spin storage device. Electric-field control of the magnetic anisotropy energy (MAE) using multiferroics materials is a promising method to solve this problem. Based on density functional theory, we investigated the effects of the ferroelectric polarization on MAE of FePt/PbTiO3 multiferroic heterostructures. The MAEs of FePt monolayer with different polarization intensity are calculated. Our results indicated that the interfaces coupling between ferroelectric terminals and ferromagnetic terminals have a very large impact on the MAE of FePt monolayer. Moreover, with the reversal of the polarization orientation of ferroelectric PbTiO3 films, the MAE of ferromagnetic FePt monolayer has a monotonous but non-linear change. We demonstrated that the reversal of the polarization orientation results in a redistribution of charge density at the interface, thus resulting in a monotonic change in MAE with polarization intensity. It is provided an effective way to modulate the MAE by controlling the polarization intensity of ferroelectric layers.
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Affiliation(s)
- Tian Liu
- School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, People's Republic of China. Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
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Vermeulen BF, Ciubotaru F, Popovici MI, Swerts J, Couet S, Radu IP, Stancu A, Temst K, Groeseneken G, Adelmann C, Martens KM. Ferroelectric Control of Magnetism in Ultrathin HfO 2\Co\Pt Layers. ACS APPLIED MATERIALS & INTERFACES 2019; 11:34385-34393. [PMID: 31449744 DOI: 10.1021/acsami.9b07973] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The recent demonstration of ferroelectricity in ultrathin HfO2 has kickstarted a new wave of research into this material. HfO2 in the orthorhombic phase can be considered the first and only truly nanoscale ferroelectric material that is compatible with silicon-based nanoelectronics applications. In this article, we demonstrate the ferroelectric control of the magnetic properties of cobalt deposited on ultrathin aluminum-doped, atomic layer deposition-grown HfO2 (tHfO2 = 6.5 nm). The ferroelectric effect is shown to control the shape of the magnetic hysteresis, quantified here by the magnetic switching energy. Furthermore, the magnetic properties such as the remanence are modulated by up to 41%. We show that this modulation does not only correlate with the charge accumulation at the interface but also shows an additional component associated with the ferroelectric polarization switching. An in-depth analysis using first order reversal curves shows that the coercive and interaction field distributions of cobalt can be modulated up to, respectively, 5.8% and 10.5% with the ferroelectric polarization reversal.
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Affiliation(s)
- Bart F Vermeulen
- Laboratorium voor Halfgeleiderfysica , KU Leuven , 3001 Leuven , Belgium
- IMEC , Kapeldreef 75 , 3001 Leuven , Belgium
| | | | | | | | | | | | - Alexandru Stancu
- Faculty of Physics , Alexandru Ioan Cuza University of Iasi , Iasi 700506 , Romania
| | - Kristiaan Temst
- Instituut voor Kern-en Stralingsfysica , KU Leuven , 3001 Leuven , Belgium
| | - Guido Groeseneken
- IMEC , Kapeldreef 75 , 3001 Leuven , Belgium
- Department of Electrical Engineering , KU Leuven , 3001 Leuven , Belgium
| | | | - Koen M Martens
- Laboratorium voor Halfgeleiderfysica , KU Leuven , 3001 Leuven , Belgium
- IMEC , Kapeldreef 75 , 3001 Leuven , Belgium
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49
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Functional Ferroic Domain Walls for Nanoelectronics. MATERIALS 2019; 12:ma12182927. [PMID: 31510049 PMCID: PMC6766344 DOI: 10.3390/ma12182927] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/20/2019] [Revised: 09/05/2019] [Accepted: 09/06/2019] [Indexed: 11/17/2022]
Abstract
A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices.
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50
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Luo ZD, Peters JJP, Sanchez AM, Alexe M. Flexible Memristors Based on Single-Crystalline Ferroelectric Tunnel Junctions. ACS APPLIED MATERIALS & INTERFACES 2019; 11:23313-23319. [PMID: 31181153 DOI: 10.1021/acsami.9b04738] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Ferroelectric tunnel junction (FTJ) based memristors exhibiting continuous electric field controllable resistance states have been considered promising candidates for future high-density memories and advanced neuromorphic computational architectures. However, the use of rigid single crystal substrate and high temperature growth of the epitaxial FTJ thin films constitutes the main obstacles to using this kind of heterostructure in flexible computing devices. Here, we report the integration of centimeter-scale single crystalline FTJs on flexible plastic substrates, by water-etching based epitaxial oxide membrane lift-off and the following transfer. The resulting highly flexible FTJ membranes retain the single-crystalline structure along with stable and switchable ferroelectric polarization as the grown-on single crystal substrate state. We show that the obtained flexible memristors, i.e., FTJs on plastic substrates, present high speed and low voltage mediated memristive behaviors with resistance changes over 500% and are stable against shape change. This work is an essential step toward the realization of epitaxial ultrathin ferroelectric oxide film-based electronics on large-area, flexible, and affordable substrates.
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Affiliation(s)
- Zheng-Dong Luo
- Department of Physics , University of Warwick , CV4 7AL , Coventry , United Kingdom
| | - Jonathan J P Peters
- Department of Physics , University of Warwick , CV4 7AL , Coventry , United Kingdom
| | - Ana M Sanchez
- Department of Physics , University of Warwick , CV4 7AL , Coventry , United Kingdom
| | - Marin Alexe
- Department of Physics , University of Warwick , CV4 7AL , Coventry , United Kingdom
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