Semiconducting polymer blends that exhibit stable charge transport at high temperatures

Leveraging Insulator's Tacticity in Semiconducting Polymer Blends

Blending conjugated polymers with insulating matrices is often utilized for engineering extrinsic properties in organic electronics. Semiconductor/insulator blends are typically processed to form a uniformly distributed network of conductive domains within the insulating matrix, marrying electronic and physical properties from individual components. Understanding of polymer-polymer interactions in such systems is thus crucial for property co-optimization. One of the commonly overlooked parameters is the structural configuration of the insulator on the resulting properties, especially the electronic properties. This study investigated how the tacticity of the matrix polymer, among other relevant parameters in play, impacts solid state crystallization in semiconductor/matrix blends and hence the resulting charge transport properties. We found an intricate dependence of the film morphology, aggregation behavior, electronic charge transport, and mixed ionic-electronic coupling properties on the insulator's tacticity. Our experimentally iterative approach shows that for a given application, when selecting semiconductor/insulator combinations, the tacticity of the matrix can be leveraged to optimize performance and vary solid-state structure.

Photovoltaic nanocells for high-performance large-scale-integrated organic phototransistors

A high-performance large-scale-integrated organic phototransistor needs a semiconductor layer that maintains its photoelectric conversion ability well during high-resolution pixelization. However, lacking a precise design for the nanoscale structure, a trade-off between photoelectric performance and device miniaturization greatly limits the success in commercial application. Here we demonstrate a photovoltaic-nanocell enhancement strategy, which overcomes the trade-off and enables high-performance organic phototransistors at a level beyond large-scale integration. Embedding a core-shell photovoltaic nanocell based on perovskite quantum dots in a photocrosslinkable organic semiconductor, ultralarge-scale-integrated (>221 units) imaging chips are manufactured using photolithography. 27 million pixels are interconnected and the pixel density is 3.1 × 106 units cm-2, at least two orders of magnitude higher than in existing organic imaging chips and equivalent to the latest commercial full-frame complementary metal-oxide-semiconductor camera chips. The embedded photovoltaic nanocells induce an in situ photogating modulation and enable photoresponsivity and detectivity of 6.8 × 106 A W-1 and 1.1 × 1013 Jones (at 1 Hz), respectively, achieving the highest values of organic imaging chips at large-scale or higher integration. In addition, a very-large-scale-integrated (>216 units) stretchable biomimetic retina based on photovoltaic nanocells is manufactured for neuromorphic imaging recognition with not only resolution but also photoresponsivity and power consumption approaching those of the biological counterpart.

Nonhalogenated Solvent Processable and High-Density Photopatternable Polymer Semiconductors Enabled by Incorporating Hydroxyl Groups in the Side Chains

Polymer semiconductors hold tremendous potential for applications in flexible devices, which is however hindered by the fact that they are usually processed by halogenated solvents rather than environmentally more friendly solvents. An effective strategy to boost the solubility of high-performance polymer semiconductors in nonhalogenated solvents such as tetrahydrofuran (THF) by appending hydroxyl groups in the side chains is herein presented. The results show that hydroxyl groups, which can be easily incorporated into the side chains, can significantly improve the solubility of typical p- and n-types as well as ambipolar polymer semiconductors in THF. Meanwhile, the thin films of these polymer semiconductors from the respective THF solutions show high charge mobilities. With THF as the processing and developing solvents these polymer semiconductors with hydroxyl groups in the side chains can be well photopatterned in the presence of the photo-crosslinker, and the charge mobilities of the patterned thin films are mostly maintained by comparing with those of the respective pristine thin films. Notably, THF is successfully utilized as the processing and developing solvent to achieve high-density photopatterning with ≈82 000 device arrays cm-2 for polymer semiconductors in which hydroxyl groups are appended in the side chains.

Achieving Zero-Temperature Coefficient Point Behavior by Defect Passivation for Temperature-Immune Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) have broad prospects in biomedical, sensor, and aerospace applications. However, obtaining temperature-immune OFETs is difficult because the electrical properties of organic semiconductors (OSCs) are temperature-sensitive. The zero-temperature coefficient (ZTC) point behavior can be used to achieve a temperature-immune output current; however, it is difficult to achieve in organic devices with thermal activation characteristics, according to the existing ZTC point theory. Here, the Fermi pinning in OSCs is eliminated using the defect passivation strategy, making the Fermi level closer to the tail state at low temperatures; thus threshold voltage (VT) is negatively correlated with temperature. ZTC point behaviors in OFETs are achieved by compensation between VT and mobility at different temperatures to improve its temperature immunity. A temperature-immune output current can be realized in a variable-temperature bias voltage test over 50000 s by biasing the device at the ZTC point. This study provides an effective solution for temperature-immune OFETs and inspiration for their practical application.

Vibrational Coupling Infrared Nanocrystallography

Coupling between molecular vibrations leads to collective vibrational states with spectral features sensitive to local molecular order. This provides spectroscopic access to the low-frequency intermolecular energy landscape. In its nanospectroscopic implementation, this technique of vibrational coupling nanocrystallography (VCNC) offers information on molecular disorder and domain formation with nanometer spatial resolution. However, deriving local molecular order relies on prior knowledge of the transition dipole magnitude and crystal structure of the underlying ordered phase. Here we develop a quantitative model for VCNC by relating nano-FTIR collective vibrational spectra to the molecular crystal structure from X-ray crystallography. We experimentally validate our approach at the example of a metal organic porphyrin complex with a carbonyl ligand as the probe vibration. This framework establishes VCNC as a powerful tool for measuring low-energy molecular interactions, wave function delocalization, nanoscale disorder, and domain formation in a wide range of molecular systems.

Organic High-Temperature Synaptic Phototransistors for Energy-Efficient Neuromorphic Computing

Organic optoelectronic synaptic devices that can reliably operate in high-temperature environments (i.e., beyond 121°C) or remain stable after high-temperature treatments have significant potential in biomedical electronics and bionic robotic engineering. However, it is challenging to acquire this type of organic devices considering the thermal instability of conventional organic materials and the degradation of photoresponse mechanisms at high temperatures. Here, high-temperature synaptic phototransistors (HTSPs) based on thermally stable semiconductor polymer blends as the photosensitive layer are developed, successfully simulating fundamental optical-modulated synaptic characteristics at a wide operating temperature range from room temperature to 220°C. Robust optoelectronic performance can be observed in HTSPs even after experiencing 750 h of the double 85 testing due to the enhanced operational reliability. Using HTSPs, Morse-code optical decoding scheme and the visual object recognition capability are also verified at elevated temperatures. Furthermore, flexible HTSPs are fabricated, demonstrating an ultralow power consumption of 12.3 aJ per synaptic event at a low operating voltage of -0.05 mV. Overall, the conundrum of achieving reliable optical-modulated neuromorphic applications while balancing low power consumption can be effectively addressed. This research opens up a simple but effective avenue for the development of high-temperature and energy-efficient wearable optoelectronic devices in neuromorphic computing applications.

Polymer-Based Thermally Stable Chemiresistive Sensor for Real-Time Monitoring of NO2 Gas Emission

We present a thermally stable, mechanically compliant, and sensitive polymer-based NO2 gas sensor design. Interconnected nanoscale morphology driven from spinodal decomposition between conjugated polymers tethered with polar side chains and thermally stable matrix polymers offers judicious design of NO2-sensitive and thermally tolerant thin films. The resulting chemiresitive sensors exhibit stable NO2 sensing even at 170 °C over 6 h. Controlling the density of polar side chains along conjugated polymer backbone enables optimal design for coupling high NO2 sensitivity, selectivity, and thermal stability of polymer sensors. Lastly, thermally stable films are used to implement chemiresistive sensors onto flexible and heat-resistant substrates and demonstrate a reliable gas sensing response even after 500 bending cycles at 170 °C. Such unprecedented sensor performance as well as environmental stability are promising for real-time monitoring of gas emission from vehicles and industrial chemical processes.

An Efficient Direct Arylation Polycondensation via C-S Bond Cleavage

The direct arylation polycondensation (DArP) has become one of the most important methods to construct conjugated polymers (CPs). However, the homocoupling side-reactions of aryl halides and the low regioseletive reactivities of unfunctionalized aryls hinder the development of DArP. Here, an efficient Pd and Cu co-catalyzed DArP was developed via inert C-S bond cleavage of aryl thioethers, of which robustness was exemplified by over twenty conjugated polymers (CPs), including copolymers, homopolymers, and random polymers. The capture of oxidative addition intermediate together with experimental and theoretic results suggested the important role of palladium (Pd) and copper (Cu) co-catalysis with a bicyclic mechanism. The studies of NMR, molecular weights, trap densities, two-dimensional grazing-incidence wide-angle X-ray scattering (2D-GIWAXS), and the charge transport mobilities revealed that the homocoupling reactions were significantly suppressed with high regioselectivity of unfunctionalized aryls, suggesting this method is an excellent choice for synthesizing high performance CPs.

Room Temperature Anhydrous Suzuki-Miyaura Polymerization Enabled by C-S Bond Activation

The Suzuki-Miyaura cross-coupling is one of the most important and powerful methods for constructing C-C bonds. However, the protodeboronation of arylboronic acids hinder the development of Suzuki-Miyaura coupling in the precise synthesis of conjugated polymers (CPs). Here, an anhydrous room temperature Suzuki-Miyaura cross-coupling reaction between (hetero)aryl boronic esters and aryl sulfides was explored, of which universality was exemplified by thirty small molecules and twelve CPs. Meanwhile, the mechanistic studies involving with capturing four coordinated borate intermediate revealed the direct transmetalation of boronic esters in the absence of H2 O suppressing the protodeboronation. Additionally, the room temperature reaction significantly reduced the homocoupling defects and enhanced the optoelectronic properties of the CPs. In all, this work provides a green protocol to synthesize alternating CPs.

Protonated Organic Semiconductors: Origin of Water-Induced Charge-Trap Generation

Despite dramatic improvements in the electronic characteristics of organic semiconductors, the low operational stability of organic field-effect transistors (OFETs) hinders their direct use in practical applications. Although the literature contains numerous reports on the effects of water on the operational stability of OFETs, the underlying mechanisms of trap generation induced by water remain unclear. Here, a protonation-induced trap generation of organic semiconductors is proposed as a possible origin of the operational instability in organic field-effect transistors. Spectroscopic and electronic investigation techniques combined with simulations reveal that the direct protonation of organic semiconductors by water during operation may be responsible for the trap generation induced by bias stress; this phenomenon is independent of the trap generation at an insulator surface. In addition, the same feature occurred in small-bandgap polymers with fused thiophene rings irrespective of their crystalline ordering, implying the generality of protonation induced trap generation in various polymer semiconductors with a small bandgap. The finding of the trap-generation process provides new perspectives for achieving greater operational stability of organic field-effect transistors.

High-Performance Ambipolar and n-Type Emissive Semiconductors Based on Perfluorophenyl-Substituted Perylene and Anthracene

Emissive organic semiconductors are highly demanding for organic light-emitting transistors (OLETs) and electrically pumped organic lasers (EPOLs). However, it remains a great challenge to obtain organic semiconductors with high carrier mobility and high photoluminescence quantum yield simultaneously. Here, a new design strategy is reported for highly emissive ambipolar and even n-type semiconductors by introducing perfluorophenyl groups into polycyclic aromatic hydrocarbons such as perylene and anthracene. The results reveal that 3,9-diperfluorophenyl perylene (5FDPP) exhibits the ambipolar semiconducting property with hole and electron mobilities up to 0.12 and 1.89 cm² V^-1 s^-1 , and a photoluminescence quantum yield of 55%. One of the crystal forms of 5FDPA exhibits blue emission with an emission quantum yield of 52% and simultaneously shows the n-type semiconducting property with an electron mobility up to 2.65 cm² V^-1 s^-1 , which is the highest value among the reported organic emissive n-type semiconductors. Furthermore, crystals of 5FDPP are utilized to fabricate OLETs by using Ag as source-drain electrodes. The electroluminescence is detected in the transporting channels with an external quantum efficiency (EQE) of up to 2.2%, and the current density is up to 145 kA cm^-2 , which are among the highest values for single-component OLETs with symmetric electrodes.

Record-High Electron Mobility Exceeding 16 cm2 V- 1 s- 1 in Bisisoindigo-Based Polymer Semiconductor with a Fully Locked Conjugated Backbone

Polymer semiconductors with mobilities exceeding 10 cm² V^{- 1} s^{- 1} , especially ambipolar and n-type polymer semiconductors, are still rare, although they are of great importance for fabricating polymer field-effect transistors (PFETs) toward commercial high-grade electronics. Herein, two novel donor-acceptor copolymers, PNFFN-DTE and PNFFN-FDTE, are designed and synthesized based on the electron-deficient bisisoindigo (NFFN) and electron-rich dithienylethylenes (DTE or FDTE). The copolymer PNFFN-DTE, containing NFFN and DTE, possesses a partially locked polymeric conjugated backbone, whereas PNFFN-FDTE, containing NFFN and FDTE, has a fully locked one. Fluorine atoms in FDTE not only induce the formation of additional CH∙∙∙F hydrogen bonds, but also lower frontier molecular orbitals for PNFFN-FDTE. Both PNFFN-DTE and PNFFN-FDTE form more ordered molecular packing in thin films prepared from a polymer solution in bicomponent solvent containing 1,2-dichlorobenzene (DCB) and 1-chloronaphthalene (with volume ratio of 99.2/0.8) than pure DCB. The two copolymers-based flexible PFETs exhibit ambipolar charge-transport properties. Notably, the bicomponent solvent-processed PNFFN-FDTE-based PFETs afford a high electron mobility of 16.67 cm² V^-1 s^-1 , which is the highest electron-transport mobility for PFETs reported so far. The high electron mobility of PNFFN-FDTE is attributed to its fully locked conjugated backbone, dense molecular packing, and much matched LUMO energy level.

Highly Conductive Ultrathin Layers of Conjugated Polymers for Metal-Free Coplanar Transistors with Single-Polymer Transport Layers

Although metal or oxide conductive films are widely used as electrodes of electronic devices, organic electrodes would be more favorable for next-generation organic electronics. Here, using some model conjugated polymers as examples, we report a class of highly conductive and optically transparent polymer ultrathin layers. Vertical phase separation of semiconductor/insulator blends leads to a highly ordered two-dimensional (2D) ultrathin layer of conjugated-polymer chains on the insulator. Afterwards, the thermally evaporated dopants on the ultrathin layer lead to a conductivity of up to 10³ S cm^-1 and a sheet resistance 10³ Ω/square for a model conjugated polymer poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophenes) (PBTTT). The high conductivity is due to the high hole mobility (∼ 20 cm² V^-1 s^-1), although doping-induced charge density is still in the moderate range of 10²⁰ cm^-3 with a 1 nm thick dopant. Metal-free monolithic coplanar field-effect transistors using the same conjugated-polymer ultrathin layer with alternatively doped regions as electrodes and a semiconductor layer are realized. The field-effect mobility of this monolithic transistor is over 2 cm² V^-1 s^-1 for PBTTT, one order higher than that of the conventional PBTTT transistor using metal electrodes. The optical transparency of the single conjugated-polymer transport layer is over 90%, demonstrating a bright future for all-organic transparent electronics.

Heat Transfer Enhancement of n-Type Organic Semiconductors by an Insulator Blend Approach

The transfer of heat energy in organic semiconductors (OSCs) plays an important role in advancing the applications of organic electronics, especially for lifetime issues. However, compared with crystalline inorganic semiconductors, the thermal transport of OSCs is less efficient and a relevant understanding is very limited. In this contribution, we show that the heat conduction of OSCs can be enhanced by blending with a "commodity" insulator (both thermal and electrical). PC₇₁BM, a well-known electron transporter but poor thermal conductor, was selected as the host OSC material. The blending of a small amount of polystyrene (PS), a commonly used insulating polymer, can facilitate the heat transfer of PC₇₁BM films, as substantiated by the scanning photothermal deflection technique and an infrared thermal camera. The phase thermodynamics of PC₇₁BM/PS blends indicates that the efficient heat transfer preferably occurs in the OSC/insulator blends with better intimate mixing, where isolated PC₇₁BM domains can be effectively bridged by PS that thread through the regions. The applicability of this approach can be observed in blends with another host material─ITIC. This work provides a facile strategy for designing thermally durable organic electronic devices.

High Energy Density and Temperature Stability in PVDF/PMMA via In Situ Polymerization Blending

Dielectrics with improved energy density have long-standing demand for miniature and lightweight energy storage capacitors for electrical and electronic systems. Recently, polyvinylidene fluoride (PVDF)-based ferroelectric polymers have shown attractive energy storage performance, such as high dielectric permittivity and high breakdown strength, and are regarded as one of the most promising candidates. However, the non-negligible energy loss and inferior temperature stability of PVDF-based polymers deteriorated the energy storage performance or even the thermal runaway, which could be ascribed to vulnerable amorphous regions at elevated temperatures. Herein, a new strategy was proposed to achieve high energy density and high temperature stability simultaneously of PVDF/PMMA blends by in situ polymerization. The rigidity of the amorphous region was ideally strengthened by in situ polymerization of methyl methacrylate (MMA) monomers in a PVDF matrix to obtain PVDF/PMMA blends. The atomic force microscopic study of the microstructure of etched films showed the ultra-homogenous distribution of PMMA with high glass transition temperature in the PVDF matrix. Consequently, the temperature variation was remarkably decreased, while the high polarization response was maintained. Accordingly, the high energy density of ∼8 J/cm³ with ∼80% efficiency was achieved between 30 and 90 °C in PVDF/PMMA films with 39–62% PMMA content, outperforming most of the dielectric polymers. Our work could provide a general solution to substantially optimize the temperature stability of dielectric polymers for energy storage applications and other associated functions.

Efficient Electronic Tunneling Governs Transport in Conducting Polymer-Insulator Blends

Electronic transport models for conducting polymers (CPs) and blends focus on the arrangement of conjugated chains, while the contributions of the nominally insulating components to transport are largely ignored. In this work, an archetypal CP blend is used to demonstrate that the chemical structure of the non-conductive component has a substantial effect on charge carrier mobility. Upon diluting a CP with excess insulator, blends with as high as 97.4 wt % insulator can display carrier mobilities comparable to some pure CPs such as polyaniline and low regioregularity P3HT. In this work, we develop a single, multiscale transport model based on the microstructure of the CP blends, which describes the transport properties for all dilutions tested. The results show that the high carrier mobility of primarily insulator blends results from the inclusion of aromatic rings, which facilitate long-range tunneling (up to ca. 3 nm) between isolated CP chains. This tunneling mechanism calls into question the current paradigm used to design CPs, where the solubilizing or ionically conducting component is considered electronically inert. Indeed, optimizing the participation of the nominally insulating component in electronic transport may lead to enhanced electronic mobility and overall better performance in CPs.

A Dual Functional Diketopyrrolopyrrole-Based Conjugated Polymer as Single Component Semiconducting Photoresist by Appending Azide Groups in the Side Chains

Molecular systems that can function as photoresists are essential for the fabrication of flexible electronics through all-photolithographic processes. Most of the reported molecular systems for photo-patterning of polymeric semiconductors contain binary or multi-components. In comparison, single component semiconducting photoresist is advantageous since it will circumvent the optimization of phase separation and ensure the patterned semiconducting thin films to be more uniform. In this paper, a single component semiconducting photoresist (PDPP4T-N₃ ) by incorporating azide groups into the branching alkyl chains of a diketopyrrolopyrrole-based conjugated polymer is reported. The results reveal that i) the azide groups make the side chains to be photo-cross-linkable; ii) uniform patterns with size as small as 5 µm form under mild UV irradiation (365 nm, 85 mW cm^-2 ) at ambient conditions; iii) such photo-induced cross-linking does not affect the inter-chain packing; iv) benefiting from the single component feature, field-effect transistors (FETs) with the individual patterned thin films display satisfactorily uniform performances with average charge mobility of 0.61 ± 0.10 cm²  V^-1  s^-1 and threshold voltage of 3.49 ± 1.43 V. These results offer a simple yet effective design strategy for high-performance single component semiconducting photoresists, which hold great potentials for flexible electronics processed by all-photolithography.

Mixed Ionic-Electronic Conduction, a Multifunctional Property in Organic Conductors

Organic mixed ionic-electronic conductors (OMIECs) have gained recent interest and rapid development due to their versatility in diverse applications ranging from sensing, actuation and computation to energy harvesting/storage, and information transfer. Their multifunctional properties arise from their ability to simultaneously participate in redox reactions as well as modulation of ionic and electronic charge density throughout the bulk of the material. Most importantly, the ability to access charge states with deep modulation through a large extent of its density of states and physical volume of the material enables OMIEC-based devices to display exciting new characteristics and opens up new degrees of freedom in device design. Leveraging the infinite possibilities of the organic synthetic toolbox, this perspective highlights several chemical and structural design approaches to modify OMIECs' properties important in device applications such as electronic and ionic conductivity, color, modulus, etc. Additionally, the ability for OMIECs to respond to external stimuli and transduce signals to myriad types of outputs has accelerated their development in smart systems. This perspective further illustrates how various stimuli such as electrical, chemical, and optical inputs fundamentally change OMIECs' properties dynamically and how these changes can be utilized in device applications.

Thermally Stable Organic Field-Effect Transistors Based on Asymmetric BTBT Derivatives for High Performance Solar-Blind Photodetectors

High-performance solar-blind photodetectors are widely studied due to their unique significance in military and industrial applications. Yet the rational molecular design for materials to possess strong absorption in solar-blind region is rarely addressed. Here, an organic solar-blind photodetector is reported by designing a novel asymmetric molecule integrated strong solar-blind absorption with high charge transport property. Such alkyl substituted [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) derivatives Cn-BTBTN (n = 6, 8, and 10) can be easily assembled into 2D molecular crystals and perform high mobility up to 3.28 cm² V^-1 s^-1 , which is two orders of magnitude higher than the non-substituted core BTBTN. Cn-BTBTNs also exhibit dramatically higher thermal stability than the symmetric alkyl substituted C8-BTBT. Moreover, C10-BTBTN films with the highest mobility and strongest solar-blind absorption among the Cn-BTBTNs are applied for solar-blind photodetectors, which reveal record-high photosensitivity and detectivity up to 1.60 × 10⁷ and 7.70 × 10¹⁴ Jones. Photodetector arrays and flexible devices are also successfully fabricated. The design strategy can provide guidelines for developing materials featuring high thermal stability and stimulating such materials in solar-blind photodetector application.

Improving Charge Injection at Gold/Conjugated Polymer Contacts by Polymer Insulator-Assisted Annealing for Transistors

The poor chemical miscibility between metal and organic materials usually leads to both structural and energetic mismatches at gold/organic interfaces, and thereby, high contact resistance of organic electronic devices. This study shows that the contact resistance of organic field-effect transistors is significantly reduced by one order of magnitude, by reforming the contact interface between gold electrodes and conjugated polymers upon a polymer insulator-assisted thermal annealing. Upon an optimized solution process, the conjugated polymer is homogenously distributed within the amorphous polymer insulator matrix with relatively low glass transition temperature, and thus, even a moderate annealing temperature can induce sufficient motion of conjugated polymer chains to simultaneously adjust the polymer orientation and improve the packing of gold atoms. Consequently, gold/conjugated polymer contact is reorganized after annealing, which improves both charge transport from bulk gold to interface and charge injection from gold into conjugated polymers. This method, with appropriate insulator matrix, is effective for improving the injection of both holes and electrons, and widely applicable for many unipolar and ambipolar conjugated polymers to optimize the device performance and simultaneously increase the optical transparency (over 80%). A frequency doubler and a phase modulator are demonstrated, respectively, using the ambipolar transistors with optimized charge injection properties.

A Brief Review of Poly (Butylene Succinate) (PBS) and Its Main Copolymers: Synthesis, Blends, Composites, Biodegradability, and Applications

PBS, an acronym for poly (butylene succinate), is an aliphatic polyester that is attracting increasing attention due to the possibility of bio-based production, as well as its balanced properties, enhanced processability, and excellent biodegradability. This brief review has the aim to provide the status concerning the synthesis, production, thermal, morphological and mechanical properties underlying biodegradation ability, and major applications of PBS and its principal copolymers.

Crystalline Domain Formation to Enable High-Performance Polymer Thermoelectrics Inspired by Thermocleavable Materials

Improving the electrical conductivity is an important role in realizing high thermoelectric performance of solution-processable polymers. Herein, a simple and robust approach to boost the mobility and doping efficiency of a diketopyrrolopyrrole-based copolymer with the introduction of thermocleavable side chains (PDPPS-X, where X is the molar ratio of the thermocleavable side chains and alkyl chains) is first provided. Notably, the incorporated thermocleavable groups can be effectively removed after thermal treatment and therefore contribute to the crystalline domain formation via hydrogen-bonded networks, which is critical for conductivity enhancements. Grazing incidence wide-angle X-ray scattering (GIWAXS) patterns give a clear indication that the thermal treatment of PDPPS-5 can greatly improve the structural arrangement, resulting in a significantly enhanced hole mobility (5.4 times that of PDPPS-0 without thermocleavable chains). Compared to PDPPS-0, a larger Fermi level shift is observed after doping PDPPS-5 with FeCl₃, reflecting a better doping efficiency. Consequently, remarkably improved conductivity and power factor are achieved by PDPPS-5 after doping with 0.03 M FeCl₃ at room temperature, which are about 2.2 and 3.5 times higher than that of PDPPS-0 at the same testing condition, respectively. Moreover, PDPPS-5 achieved a maximum power factor of 57.5 μW m^-1 K^-2 at 404 K.

Approaching disorder-tolerant semiconducting polymers

Doping has been widely used to control the charge carrier concentration in organic semiconductors. However, in conjugated polymers, n-doping is often limited by the tradeoff between doping efficiency and charge carrier mobilities, since dopants often randomly distribute within polymers, leading to significant structural and energetic disorder. Here, we screen a large number of polymer building block combinations and explore the possibility of designing n-type conjugated polymers with good tolerance to dopant-induced disorder. We show that a carefully designed conjugated polymer with a single dominant planar backbone conformation, high torsional barrier at each dihedral angle, and zigzag backbone curvature is highly dopable and can tolerate dopant-induced disorder. With these features, the designed diketopyrrolopyrrole (DPP)-based polymer can be efficiently n-doped and exhibit high n-type electrical conductivities over 120 S cm⁻¹, much higher than the reference polymers with similar chemical structures. This work provides a polymer design concept for highly dopable and highly conductive polymeric semiconductors.

In conjugated polymers, n-doping is often limited by the tradeoff between doping efficiency and charge carrier mobilities, since dopants often randomly distribute within polymers, leading to significant structural and energetic disorder. Here, the authors screen a large number of polymer building block combinations and explore the possibility of designing n-type conjugated polymers with good tolerance to dopant-induced disorder.

Rapid Detection of SARS-CoV-2 Antigens and Antibodies Using OFET Biosensors Based on a Soft and Stretchable Semiconducting Polymer

In the midst of the COVID-19 pandemic, adaptive solutions are needed to allow us to make fast decisions and take effective sanitation measures, e.g., the fast screening of large groups (employees, passengers, pupils, etc.). Although being reliable, most of the existing SARS-CoV-2 detection methods cannot be integrated into garments to be used on demand. Here, we report an organic field-effect transistor (OFET)-based biosensing device detecting of both SARS-CoV-2 antigens and anti-SARS-CoV-2 antibodies in less than 20 min. The biosensor was produced by functionalizing an intrinsically stretchable and semiconducting triblock copolymer (TBC) film either with the anti-S1 protein antibodies (S1 Abs) or receptor-binding domain (RBD) of the S1 protein, targeting CoV-2-specific RBDs and anti-S1 Abs, respectively. The obtained sensing platform is easy to realize due to the straightforward fabrication of the TBC film and the utilization of the reliable physical adsorption technique for the molecular immobilization. The device demonstrates a high sensitivity of about 19%/dec and a limit of detection (LOD) of 0.36 fg/mL for anti-SARS-Cov-2 antibodies and, at the same time, a sensitivity of 32%/dec and a LOD of 76.61 pg/mL for the virus antigen detection. The TBC used as active layer is soft, has a low modulus of 24 MPa, and can be stretched up to 90% with no crack formation of the film. The TBC is compatible with roll-to-roll printing, potentially enabling the fabrication of low-cost wearable or on-skin diagnostic platforms aiming at point-of-care concepts.

Foundry-compatible high-resolution patterning of vertically phase-separated semiconducting films for ultraflexible organic electronics

Solution processability of polymer semiconductors becomes an unfavorable factor during the fabrication of pixelated films since the underlying layer is vulnerable to subsequent solvent exposure. A foundry-compatible patterning process must meet requirements including high-throughput and high-resolution patternability, broad generality, ambient processability, environmentally benign solvents, and, minimal device performance degradation. However, known methodologies can only meet very few of these requirements. Here, a facile photolithographic approach is demonstrated for foundry-compatible high-resolution patterning of known p- and n-type semiconducting polymers. This process involves crosslinking a vertically phase-separated blend of the semiconducting polymer and a UV photocurable additive, and enables ambient processable photopatterning at resolutions as high as 0.5 μm in only three steps with environmentally benign solvents. The patterned semiconducting films can be integrated into thin-film transistors having excellent transport characteristics, low off-currents, and high thermal (up to 175 °C) and chemical (24 h immersion in chloroform) stability. Moreover, these patterned organic structures can also be integrated on 1.5 μm-thick parylene substrates to yield highly flexible (1 mm radius) and mechanically robust (5,000 bending cycles) thin-film transistors.

Though shape-changing devices are promising for future haptic displays, existing designs fail to provide smooth surfaces for the user during tactile exploration. Here, the authors utilize flexible auxetic structures to realize shape displays with smooth surfaces and different Gaussian curvatures.

A-π-D-π-A-Based Small Molecules for OTFTs Containing Diketopyrrolopyrrole as Acceptor Units

A-π-D-π-A-based small molecules 6,6′-((thiophene-2,5-diylbis(ethyne-2,1-diyl))bis(thiophene-5,2-diyl))bis(2,5-bis(2-ethylhexyl)-3-(thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione) (TDPP-T) and 6,6′-(((2,3-dihydrothieno[3,4-b][1,4]dioxine-5,7-diyl)bis(ethyne-2,1-diyl))bis(thiophene-5,2-diyl))bis(2,5-bis(2-ethylhexyl)-3-(thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione) (TDPP-EDOT) have been designed and synthesized. The diketopyrrolopyrrole acts as an electron acceptor, while the thiophene or 3,4-ethylenedioxythiophene acts as an electron donor. The donor–acceptor groups are connected by an ethynyl bridge to further enhance the conjugation. The optoelectronics, electrochemical, and thermal properties have been investigated. Organic thin film transistor (OTFT) devices prepared from TDPP-T and TDPP-EDOT have shown p-type mobility. In as cast films, TDPP-T and TDPP-EDOT have shown a hole mobility of 5.44 × 10⁻⁶ cm² V⁻¹ s⁻¹ and 4.13 × 10⁻⁶ cm² V⁻¹ s⁻¹, respectively. The increase in the mobility of TDPP-T and TDPP-EDOT OTFT devices was observed after annealing at 150 °C, after which the mobilities were 3.11 × 10⁻⁴ cm² V⁻¹ s⁻¹ and 2.63 × 10⁻⁴ cm² V⁻¹ s⁻¹, respectively.

Direct Observation of Confinement Effects of Semiconducting Polymers in Polymer Blend Electronic Systems

The advent of special types of polymeric semiconductors, known as "polymer blends," presents new opportunities for the development of next-generation electronics based on these semiconductors' versatile functionalities in device applications. Although these polymer blends contain semiconducting polymers (SPs) mixed with a considerably high content of insulating polymers, few of these blends unexpectedly yield much higher charge carrier mobilities than those of pure SPs. However, the origin of such an enhancement has remained unclear owing to a lack of cases exhibiting definite improvements in charge carrier mobility, and the limited knowledge concerning the underlying mechanism thereof. In this study, the morphological changes and internal nanostructures of polymer blends based on various SP types with different intermolecular interactions in an insulating polystyrene matrix are investigated. Through this investigation, the physical confinement of donor-acceptor type SP chains in a continuous nanoscale network structure surrounded by polystyrenes is shown to induce structural ordering with more straight edge-on stacked SP chains. Hereby, high-performance and transparent organic field-effect transistors with a hole mobility of ≈5.4 cm2 V-1 s-1 and an average transmittance exceeding 72% in the visible range are achieved.

A comprehensive nano-interpenetrating semiconducting photoresist toward all-photolithography organic electronics

Owing to high resolution, reliability, and industrial compatibility, all-photolithography is a promising strategy for industrial manufacture of organic electronics. However, it receives limited success due to the absence of a semiconducting photoresist with high patterning resolution, mobility, and performance stability against photolithography solution processes. Here, we develop a comprehensive semiconducting photoresist with nano-interpenetrating structure. After photolithography, nanostructured cross-linking networks interpenetrate with continuous phases of semiconducting polymers, enabling submicrometer patterning accuracy and compact molecular stacking with high thermodynamic stability. The mobility reaches the highest values of photocrosslinkable organic semiconductors and maintains almost 100% after soaking in developer and stripper for 1000 min. Owing to the comprehensive performance, all-photolithography is achieved, which fabricates organic inverters and high-density transistor arrays with densities up to 1.1 × 10⁵ units cm^-2 and 1 to 4 orders larger than conventional printing processes, opening up a new approach toward manufacturing highly integrated organic circuits and systems.

3D Printing Temperature Tailors Electrical and Electrochemical Properties through Changing Inner Distribution of Graphite/Polymer

The rise of 3D printing technology, with fused deposition modeling as one of the simplest and most widely used techniques, has empowered an increasing interest for composite filaments, providing additional functionality to 3D-printed components. For future applications, like electrochemical energy storage, energy conversion, and sensing, the tuning of the electrochemical properties of the filament and its characterization is of eminent importance to improve the performance of 3D-printed devices. In this work, customized conductive graphite/poly(lactic acid) filament with a percentage of graphite filler close to the conductivity percolation limit is fabricated and 3D-printed into electrochemical devices. Detailed scanning electrochemical microscopy investigations demonstrate that 3D-printing temperature has a dramatic effect on the conductivity and electrochemical performance due to a changed conducive filler/polymer distribution. This may allow, e.g., 3D printing of active/inactive parts of the same structure from the same filament when changing the 3D printing nozzle temperature. These tailored properties can have profound influence on the application of these 3D-printed composites, which can lead to a dramatically different functionality of the final electrical, electrochemical, and energy storage device.

Charge Carrier Mobility Improvement in Diketopyrrolopyrrole Block-Copolymers by Shear Coating

Shear coating is a promising deposition method for upscaling device fabrication and enabling high throughput, and is furthermore suitable for translating to roll-to-roll processing. Although common polymer semiconductors (PSCs) are solution processible, they are still prone to mechanical failure upon stretching, limiting applications in e.g., electronic skin and health monitoring. Progress made towards mechanically compliant PSCs, e.g., the incorporation of soft segments into the polymer backbone, could not only allow such applications, but also benefit advanced fabrication methods, like roll-to-roll printing on flexible substrates, to produce the targeted devices. Tri-block copolymers (TBCs), consisting of an inner rigid semiconducting poly-diketo-pyrrolopyrrole-thienothiophene (PDPP-TT) block flanked by two soft elastomeric poly(dimethylsiloxane) (PDMS) chains, maintain good charge transport properties, while being mechanically soft and flexible. Potentially aiming at the fabrication of TBC-based wearable electronics by means of cost-efficient and scalable deposition methods (e.g., blade-coating), a tolerance of the electrical performance of the TBCs to the shear speed was investigated. Herein, we demonstrate that such TBCs can be deposited at high shear speeds (film formation up to a speed of 10 mm s⁻¹). While such high speeds result in increased film thickness, no degradation of the electrical performance was observed, as was frequently reported for polymer−based OFETs. Instead, high shear speeds even led to a small improvement in the electrical performance: mobility increased from 0.06 cm² V⁻¹ s⁻¹ at 0.5 mm s⁻¹ to 0.16 cm² V⁻¹ s⁻¹ at 7 mm s⁻¹ for the TBC with 24 wt% PDMS, and for the TBC containing 37 wt% PDMS from 0.05 cm² V⁻¹ s⁻¹ at 0.5 mm s⁻¹ to 0.13 cm² V⁻¹ s⁻¹ at 7 mm s⁻¹. Interestingly, the improvement of mobility is not accompanied by any significant changes in morphology.

Material properties particularly suited to be measured with helium scattering: selected examples from 2D materials, van der Waals heterostructures, glassy materials, catalytic substrates, topological insulators and superconducting radio frequency materials

Helium Atom Scattering (HAS) and Helium Spin-Echo scattering (HeSE), together helium scattering, are well established, but non-commercial surface science techniques. They are characterised by the beam inertness and very low beam energy (<0.1 eV) which allows essentially all materials and adsorbates, including fragile and/or insulating materials and light adsorbates such as hydrogen to be investigated on the atomic scale. At present there only exist an estimated less than 15 helium and helium spin-echo scattering instruments in total, spread across the world. This means that up till now the techniques have not been readily available for a broad scientific community. Efforts are ongoing to change this by establishing a central helium scattering facility, possibly in connection with a neutron or synchrotron facility. In this context it is important to clarify what information can be obtained from helium scattering that cannot be obtained with other surface science techniques. Here we present a non-exclusive overview of a range of material properties particularly suited to be measured with helium scattering: (i) high precision, direct measurements of bending rigidity and substrate coupling strength of a range of 2D materials and van der Waals heterostructures as a function of temperature, (ii) direct measurements of the electron-phonon coupling constant λ exclusively in the low energy range (<0.1 eV, tuneable) for 2D materials and van der Waals heterostructures (iii) direct measurements of the surface boson peak in glassy materials, (iv) aspects of polymer chain surface dynamics under nano-confinement (v) certain aspects of nanoscale surface topography, (vi) central properties of surface dynamics and surface diffusion of adsorbates (HeSE) and (vii) two specific science case examples - topological insulators and superconducting radio frequency materials, illustrating how combined HAS and HeSE are necessary to understand the properties of quantum materials. The paper finishes with (viii) examples of molecular surface scattering experiments and other atom surface scattering experiments which can be performed using HAS and HeSE instruments.

Revealing molecular conformation-induced stress at embedded interfaces of organic optoelectronic devices by sum frequency generation spectroscopy

Interface stresses are pervasive and critical in conventional optoelectronic devices and generally lead to many failures and reliability problems. However, detection of the interface stress embedded in organic optoelectronic devices is a long-standing problem, which causes the unknown relationship between interface stress and organic device stability (one key and unsettled issue for practical applications). In this study, a kind of previously unknown molecular conformation-induced stress is revealed at the organic embedded interface through sum frequency generation (SFG) spectroscopy technique. This stress can be greater than 10 kcal/mol per nm² and is sufficient to induce molecular disorder in the organic semiconductor layer (with energy below 8 kcal/mol per nm²), finally causing instability of the organic transistor. This study not only reveals interface stress in organic devices but also correlates instability of organic devices with the interface stress for the first time, offering an effective solution for improving device stability.

Simultaneous Incorporation of Two Types of Azo-Groups in the Side Chains of a Conjugated D-A Polymer for Logic Control of the Semiconducting Performance by Light Irradiation

A new design strategy for photoresponsive semiconducting polymer with tri-stable semiconducting states is reported by simultaneous incorporation of tetra-ortho-methoxy-substituted azobenzene (mAzo) and arylazopyrazole (pAzo) in the side chains. The trans-to-cis transformations for mAzo and pAzo groups can sequentially occur within the polymer thin film after sequential 560 and 365 nm light irradiation. Remarkably, the trans-cis isomerization of mAzo and pAzo groups can modulate the thin film crystallinity. Accordingly, the performances of the resulting field-effect transistors (FETs) can be reversibly modulated, leading to tri-stable semiconducting states after sequential 560, 365, and 470 nm light irradiation. Therefore, the device performance can be logically controlled by light irradiation at three different wavelengths. In addition, with light irradiation and device current as the input and output signals, the three-value logic gate by using single FET device can be successfully mimicked.

Water-Surface Drag Coating: A New Route Toward High-Quality Conjugated Small-Molecule Thin Films with Enhanced Charge Transport Properties

Electronic properties of organic semiconductor (OSC) thin films are largely determined by their morphologies and crystallinities. However, solution-processed conjugated small-molecule OSC thin films usually exhibit abundant grain boundaries and impure grain orientations because of complex fluid dynamics during solution coating. Here, a novel methodology, water-surface drag coating, is demonstrated to fabricate high-quality OSC thin films with greatly enhanced charge transport properties. This method utilizes the water surface to alter the evaporation dynamics of solution to enlarge the grain size, and a unique drag-coating process to achieve the unidirectional growth of organic crystals. Using 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (Dif-TES-ADT) as an example, thin films with millimeter-sized single-crystal domains and pure crystallographic orientations are achieved, revealing a significant enhancement (4.7 times) of carrier mobility. More importantly, the resulting film can be directly transferred onto any desired flexible substrates, and flexible transistors based on the Dif-TES-ADT thin films show a mobility as high as 16.1 cm² V^-1 s^-1 , which represents the highest mobility value for the flexible transistors reported thus far. The method is general for the growth of various high-quality OSC thin films, thus opening up opportunities for high-performance organic flexible electronics.

Roadmap on emerging hardware and technology for machine learning

Recent progress in artificial intelligence is largely attributed to the rapid development of machine learning, especially in the algorithm and neural network models. However, it is the performance of the hardware, in particular the energy efficiency of a computing system that sets the fundamental limit of the capability of machine learning. Data-centric computing requires a revolution in hardware systems, since traditional digital computers based on transistors and the von Neumann architecture were not purposely designed for neuromorphic computing. A hardware platform based on emerging devices and new architecture is the hope for future computing with dramatically improved throughput and energy efficiency. Building such a system, nevertheless, faces a number of challenges, ranging from materials selection, device optimization, circuit fabrication and system integration, to name a few. The aim of this Roadmap is to present a snapshot of emerging hardware technologies that are potentially beneficial for machine learning, providing the Nanotechnology readers with a perspective of challenges and opportunities in this burgeoning field.

Dependency of the structure of a water layer sandwiched by silicon carbide on shear speed and temperature

As a third-generation semiconductor, silicon carbide power devices are expected to be superior to those made of silicon because of their high voltage resistance, low loss, and high efficiency. So understanding the technology for polishing wafers of silicon carbide is important, which includes studying the structure of the liquid on the surface of silicon carbide. Using molecular dynamics based on Lennard-Jones field, the structure of a water film contained within two silicon carbide (〈001〉 and 〈110〉) walls was analyzed, and found that layers of water appear and change depending on the distance between the two walls. When a double-layer water structure forms, it is affected by the temperature and shear velocity. The conclusion is that when the temperature increases or the shear velocity increases, the double-layer water structure easily transforms into a single-layer water structure, and the pressure between the two solid surfaces gradually falls and may even become negative. This phenomenon significantly depends on the distance between the two silicon carbide walls.