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Karimi B, Steffensen GO, Higginbotham AP, Marcus CM, Levy Yeyati A, Pekola JP. Bolometric detection of Josephson radiation. NATURE NANOTECHNOLOGY 2024:10.1038/s41565-024-01770-7. [PMID: 39174835 DOI: 10.1038/s41565-024-01770-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Accepted: 07/19/2024] [Indexed: 08/24/2024]
Abstract
One of the most promising approaches towards large-scale quantum computation uses devices based on many Josephson junctions. Yet, even today, open questions regarding the single junction remain unsolved, such as the detailed understanding of the quantum phase transitions, the coupling of the Josephson junction to the environment or how to improve the coherence of a superconducting qubit. Here we design and build an engineered on-chip reservoir connected to a Josephson junction that acts as an efficient bolometer for detecting the Josephson radiation under non-equilibrium, that is, biased conditions. The bolometer converts the a.c. Josephson current at microwave frequencies up to about 100 GHz into a temperature rise measured by d.c. thermometry. A circuit model based on realistic parameter values captures both the current-voltage characteristics and the measured power quantitatively. The present experiment demonstrates an efficient, wide-band, thermal detection scheme of microwave photons and provides a sensitive detector of Josephson dynamics beyond the standard conductance measurements.
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Affiliation(s)
- Bayan Karimi
- Pico Group, QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, Finland.
- QTF Centre of Excellence, Department of Physics, Faculty of Science, University of Helsinki, Helsinki, Finland.
| | - Gorm Ole Steffensen
- Departamento de Física Teórica de la Materia Condensada, Condensed Matter Physics Center (IFIMAC) and Instituto Nicolás Cabrera, Universidad Autonoma de Madrid, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Madrid, Spain
| | - Andrew P Higginbotham
- The James Franck Institute and Department of Physics, University of Chicago, Chicago, IL, USA
- IST Austria, Klosterneuburg, Austria
| | - Charles M Marcus
- Materials Science and Engineering and Department of Physics, University of Washington, Seattle, WA, USA
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
- InstituteQ-The Finnish Quantum Institute, Aalto University, Espoo, Finland
| | - Alfredo Levy Yeyati
- Departamento de Física Teórica de la Materia Condensada, Condensed Matter Physics Center (IFIMAC) and Instituto Nicolás Cabrera, Universidad Autonoma de Madrid, Madrid, Spain
| | - Jukka P Pekola
- Pico Group, QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, Finland
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2
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Rebello AM, Ruela LM, Moreto G, Klein NY, Martins E, Oliveira IS, Sinnecker JP, Rouxinol F. Optimizing Josephson Junction Reproducibility in 30 kV E-Beam Lithography: An Analysis of Backscattered Electron Distribution. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:783. [PMID: 38727377 PMCID: PMC11085180 DOI: 10.3390/nano14090783] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 04/13/2024] [Accepted: 04/17/2024] [Indexed: 05/12/2024]
Abstract
This paper explores methods to enhance the reproducibility of Josephson junctions, which are crucial elements in superconducting quantum technologies, when employing the Dolan technique in 30 kV e-beam processes. The study explores the influence of dose distribution along the bridge area on reproducibility, addressing challenges related to fabrication sensitivity. Experimental methods include e-beam lithography, with electron trajectory simulations shedding light on the behavior of backscattered electrons. Wedescribe the fabrication of various Josephson junction geometries and analyze the correlation between the success rates of different lithography patterns and the simulated distribution of backscattered electrons. Our findings demonstrate a success rate of up to 96.3% for the double-resist 1-step low-energy e-beam lithography process. As a means of implementation strategy, we provide a geometric example that takes advantage of simulated stability regions to administer a controlled, uniform dose across the junction area, introducing novel features to overcome the difficulties associated with fabricating bridge-like structures.
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Affiliation(s)
- Arthur M. Rebello
- Coordenação de Matéria Condensada, Física Aplicada e Nanociência (COMAN), Centro Brasileiro de Pesquisas Físicas (CBPF), Rio de Janeiro 22290-180, RJ, Brazil; (A.M.R.); (N.Y.K.); (I.S.O.)
| | - Lucas M. Ruela
- Quantum Device Physics Laboratory, Universidade Estadual de Campinas (Unicamp), Instituto de Física Gleb Wataghin (IFGW), Campinas 13083-859, SP, Brazil; (L.M.R.); (G.M.)
| | - Gustavo Moreto
- Quantum Device Physics Laboratory, Universidade Estadual de Campinas (Unicamp), Instituto de Física Gleb Wataghin (IFGW), Campinas 13083-859, SP, Brazil; (L.M.R.); (G.M.)
| | - Naiara Y. Klein
- Coordenação de Matéria Condensada, Física Aplicada e Nanociência (COMAN), Centro Brasileiro de Pesquisas Físicas (CBPF), Rio de Janeiro 22290-180, RJ, Brazil; (A.M.R.); (N.Y.K.); (I.S.O.)
| | - Eldues Martins
- Leopoldo Américo Miguez de Mello Research, Development and Innovation Center (CENPES), Rio de Janeiro 21941-915, RJ, Brazil;
| | - Ivan S. Oliveira
- Coordenação de Matéria Condensada, Física Aplicada e Nanociência (COMAN), Centro Brasileiro de Pesquisas Físicas (CBPF), Rio de Janeiro 22290-180, RJ, Brazil; (A.M.R.); (N.Y.K.); (I.S.O.)
| | - João P. Sinnecker
- Coordenação de Matéria Condensada, Física Aplicada e Nanociência (COMAN), Centro Brasileiro de Pesquisas Físicas (CBPF), Rio de Janeiro 22290-180, RJ, Brazil; (A.M.R.); (N.Y.K.); (I.S.O.)
| | - Francisco Rouxinol
- Quantum Device Physics Laboratory, Universidade Estadual de Campinas (Unicamp), Instituto de Física Gleb Wataghin (IFGW), Campinas 13083-859, SP, Brazil; (L.M.R.); (G.M.)
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3
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Yang Y, Luo S, Wang W, Gao X, Yao X, Wu T. From bench to bedside: Overview of magnetoencephalography in basic principle, signal processing, source localization and clinical applications. Neuroimage Clin 2024; 42:103608. [PMID: 38653131 PMCID: PMC11059345 DOI: 10.1016/j.nicl.2024.103608] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 04/14/2024] [Accepted: 04/16/2024] [Indexed: 04/25/2024]
Abstract
Magnetoencephalography (MEG) is a non-invasive technique that can precisely capture the dynamic spatiotemporal patterns of the brain by measuring the magnetic fields arising from neuronal activity along the order of milliseconds. Observations of brain dynamics have been used in cognitive neuroscience, the diagnosis of neurological diseases, and the brain-computer interface (BCI). In this study, we outline the basic principle, signal processing, and source localization of MEG, and describe its clinical applications for cognitive assessment, the diagnoses of neurological diseases and mental disorders, preoperative evaluation, and the BCI. This review not only provides an overall perspective of MEG, ranging from practical techniques to clinical applications, but also enhances the prevalent understanding of neural mechanisms. The use of MEG is expected to lead to significant breakthroughs in neuroscience.
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Affiliation(s)
- Yanling Yang
- School of Health Science and Engineering, University of Shanghai for Science and Technology, Shanghai, China; College of Medical Imaging, Jiading District Central Hospital Affiliated Shanghai University of Medicine and Health Sciences, Shanghai, China
| | - Shichang Luo
- School of Health Science and Engineering, University of Shanghai for Science and Technology, Shanghai, China; College of Medical Imaging, Jiading District Central Hospital Affiliated Shanghai University of Medicine and Health Sciences, Shanghai, China
| | - Wenjie Wang
- School of Health Science and Engineering, University of Shanghai for Science and Technology, Shanghai, China; College of Medical Imaging, Jiading District Central Hospital Affiliated Shanghai University of Medicine and Health Sciences, Shanghai, China
| | - Xiumin Gao
- School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai, China
| | - Xufeng Yao
- College of Medical Imaging, Jiading District Central Hospital Affiliated Shanghai University of Medicine and Health Sciences, Shanghai, China.
| | - Tao Wu
- College of Medical Imaging, Jiading District Central Hospital Affiliated Shanghai University of Medicine and Health Sciences, Shanghai, China
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4
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Ali S, Ouyang PH, He JX, Chai YQ, Wei LF. Josephson radiation threshold detector. Sci Rep 2024; 14:2531. [PMID: 38291128 PMCID: PMC10827805 DOI: 10.1038/s41598-024-52684-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Accepted: 01/19/2024] [Indexed: 02/01/2024] Open
Abstract
A Josephson radiation threshold detector (JRTD) that is based on the threshold behaviour of a current bias Josephson junction (CBJJ) is designed and fabricated for infrared radiation (IR@1550nm) detection at low temperatures. To achieve the optimal performance, we develop a binary hypothesis detection method to calibrate Josephson threshold behaviours (i.e. the switching current distributions of the CBJJ with the Al/AlOx/Al junction) in the absence and presence of radiation. In the absence of IR radiation, the junction transitioned with a measurable voltage drop across the junction, and this signal was treated as the events of hypothesis H0. The events of junction transition observed in the presence of the IR radiation served as hypothesis H1. Considering the usual Gaussian noise and based on statistical decision theory, the accumulated data of the measured switching current distributions are processed, and the threshold sensitivity of the demonstrated JRTD device is estimated. The minimum detectable IR radiation power of the proposed detector is approximately 0.74 pW, which corresponds to the photon rate of 5.692 × 106 photons/second. Further optimisation of JRTDs to implement the desired binary detection of a single photon is still a subject of argument, at least theoretically.
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Affiliation(s)
- Soragga Ali
- Information Quantum Technology Laboratory, International Cooperation Research Center of China Communication and Sensor Networks for Modern Transportation, School of Information Science and Technology, Southwest Jiaotong University, Chengdu, 610031, China
| | - P H Ouyang
- Information Quantum Technology Laboratory, International Cooperation Research Center of China Communication and Sensor Networks for Modern Transportation, School of Information Science and Technology, Southwest Jiaotong University, Chengdu, 610031, China
| | - J X He
- Information Quantum Technology Laboratory, International Cooperation Research Center of China Communication and Sensor Networks for Modern Transportation, School of Information Science and Technology, Southwest Jiaotong University, Chengdu, 610031, China
| | - Y Q Chai
- Information Quantum Technology Laboratory, International Cooperation Research Center of China Communication and Sensor Networks for Modern Transportation, School of Information Science and Technology, Southwest Jiaotong University, Chengdu, 610031, China
| | - L F Wei
- Information Quantum Technology Laboratory, International Cooperation Research Center of China Communication and Sensor Networks for Modern Transportation, School of Information Science and Technology, Southwest Jiaotong University, Chengdu, 610031, China.
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5
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Yang X, Xiao S, Zhang H, Xu L, Wu L, Zhang J, Zhang Y. PE-RASP: range image stitching of photon-efficient imaging through reconstruction, alignment, stitching integration network based on intensity image priors. OPTICS EXPRESS 2024; 32:2817-2838. [PMID: 38297801 DOI: 10.1364/oe.514027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Accepted: 12/27/2023] [Indexed: 02/02/2024]
Abstract
Single photon imaging integrates advanced single photon detection technology with Laser Radar (LiDAR) technology, offering heightened sensitivity and precise time measurement. This approach finds extensive applications in biological imaging, remote sensing, and non-visual field imaging. Nevertheless, current single photon LiDAR systems encounter challenges such as low spatial resolution and a limited field of view in their intensity and range images due to constraints in the imaging detector hardware. To overcome these challenges, this study introduces a novel deep learning image stitching algorithm tailored for single photon imaging. Leveraging the robust feature extraction capabilities of neural networks and the richer feature information present in intensity images, the algorithm stitches range images based on intensity image priors. This innovative approach significantly enhances the spatial resolution and imaging range of single photon LiDAR systems. Simulation and experimental results demonstrate the effectiveness of the proposed method in generating high-quality stitched single-photon intensity images, and the range images exhibit comparable high quality when stitched with prior information from the intensity images.
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6
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Wang X, Wang H, Ma L, Zhang L, Yang Z, Dong D, Chen X, Li H, Guan Y, Zhang B, Chen Q, Shi L, Li H, Qin Z, Tu X, Zhang L, Jia X, Chen J, Kang L, Wu P. Topotactic fabrication of transition metal dichalcogenide superconducting nanocircuits. Nat Commun 2023; 14:4282. [PMID: 37463894 DOI: 10.1038/s41467-023-39997-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Accepted: 07/07/2023] [Indexed: 07/20/2023] Open
Abstract
Superconducting nanocircuits, which are usually fabricated from superconductor films, are the core of superconducting electronic devices. While emerging transition-metal dichalcogenide superconductors (TMDSCs) with exotic properties show promise for exploiting new superconducting mechanisms and applications, their environmental instability leads to a substantial challenge for the nondestructive preparation of TMDSC nanocircuits. Here, we report a universal strategy to fabricate TMDSC nanopatterns via a topotactic conversion method using prepatterned metals as precursors. Typically, robust NbSe2 meandering nanowires can be controllably manufactured on a wafer scale, by which a superconducting nanowire circuit is principally demonstrated toward potential single photon detection. Moreover, versatile superconducting nanocircuits, e.g., periodical circle/triangle hole arrays and spiral nanowires, can be prepared with selected TMD materials (NbS2, TiSe2, or MoTe2). This work provides a generic approach for fabricating nondestructive TMDSC nanocircuits with precise control, which paves the way for the application of TMDSCs in future electronics.
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Affiliation(s)
- Xiaohan Wang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Hao Wang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China.
- Hefei National Laboratory, Hefei, 230088, China.
| | - Liang Ma
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Labao Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China.
- Hefei National Laboratory, Hefei, 230088, China.
| | - Zhuolin Yang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Daxing Dong
- Department of Applied Physics, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Xi Chen
- Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Haochen Li
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Yanqiu Guan
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Biao Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Qi Chen
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Lili Shi
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Hui Li
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Zhi Qin
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Xuecou Tu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Lijian Zhang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Xiaoqing Jia
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
- Hefei National Laboratory, Hefei, 230088, China
| | - Jian Chen
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
| | - Lin Kang
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China
- Hefei National Laboratory, Hefei, 230088, China
| | - Peiheng Wu
- Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing, 210023, China.
- Hefei National Laboratory, Hefei, 230088, China.
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7
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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8
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Cao B, Grass T, Gazzano O, Patel KA, Hu J, Müller M, Huber-Loyola T, Anzi L, Watanabe K, Taniguchi T, Newell DB, Gullans M, Sordan R, Hafezi M, Solomon GS. Chiral Transport of Hot Carriers in Graphene in the Quantum Hall Regime. ACS NANO 2022; 16:18200-18209. [PMID: 36326218 PMCID: PMC9706666 DOI: 10.1021/acsnano.2c05502] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/05/2022] [Accepted: 09/26/2022] [Indexed: 06/16/2023]
Abstract
Photocurrent (PC) measurements can reveal the relaxation dynamics of photoexcited hot carriers beyond the linear response of conventional transport experiments, a regime important for carrier multiplication. Here, we study the relaxation of carriers in graphene in the quantum Hall regime by accurately measuring the PC signal and modeling the data using optical Bloch equations. Our results lead to a unified understanding of the relaxation processes in graphene over different magnetic field strength regimes, which is governed by the interplay of Coulomb interactions and interactions with acoustic and optical phonons. Our data provide clear indications of a sizable carrier multiplication. Moreover, the oscillation pattern and the saturation behavior of PC are manifestations of not only the chiral transport properties of carriers in the quantum Hall regime but also the chirality change at the Dirac point, a characteristic feature of a relativistic quantum Hall effect.
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Affiliation(s)
- Bin Cao
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
| | - Tobias Grass
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
- ICFO-Institut
de Ciencies Fotoniques, The Barcelona Institute
of Science and Technology, Castelldefels
(Barcelona) 08860, Spain
- DIPC—Donostia
International Physics Center, San
Sebastian20018, Spain
- Ikerbasque—Basque Foundation for Science, Bilbao48013, Spain
| | - Olivier Gazzano
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
| | | | - Jiuning Hu
- National
Institute of Standards and Technology, Gaithersburg, Maryland20878, United States
| | - Markus Müller
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
| | - Tobias Huber-Loyola
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
| | - Luca Anzi
- L-NESS,
Department of Physics, Politecnico di Milano, Via Anzani 42, 22100Como, Italy
| | - Kenji Watanabe
- National
Institute for Materials Science, 1-1 Namiki, 305-0044Tsukuba, Japan
| | - Takashi Taniguchi
- National
Institute for Materials Science, 1-1 Namiki, 305-0044Tsukuba, Japan
| | - David B. Newell
- National
Institute of Standards and Technology, Gaithersburg, Maryland20878, United States
| | - Michael Gullans
- Joint
Center for Quantum Information and Computer Science, NIST/University of Maryland, College
Park, Maryland20742, United States
| | - Roman Sordan
- L-NESS,
Department of Physics, Politecnico di Milano, Via Anzani 42, 22100Como, Italy
| | - Mohammad Hafezi
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
- IREAP, University
of Maryland, College Park, Maryland20742, United States
| | - Glenn S. Solomon
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
- Department
of Physics and IPAS, University of Adelaide, Adelaide, South Australia5005, Australia
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9
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Sarkar J, Salunkhe KV, Mandal S, Ghatak S, Marchawala AH, Das I, Watanabe K, Taniguchi T, Vijay R, Deshmukh MM. Quantum-noise-limited microwave amplification using a graphene Josephson junction. NATURE NANOTECHNOLOGY 2022; 17:1147-1152. [PMID: 36309589 DOI: 10.1038/s41565-022-01223-z] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2022] [Accepted: 08/18/2022] [Indexed: 06/16/2023]
Abstract
Josephson junctions (JJs) and their tunable properties, including their nonlinearities, play an important role in superconducting qubits and amplifiers. JJs together with the circuit quantum electrodynamics architecture form many key components of quantum information processing1. In quantum circuits, low-noise amplification of feeble microwave signals is essential, and Josephson parametric amplifiers (JPAs)2 are the widely used devices. The existing JPAs are based on Al-AlOx-Al tunnel junctions realized in a superconducting quantum interference device geometry, where magnetic flux is the knob for tuning the frequency. Recent experimental realizations of two-dimensional (2D) van der Waals JJs3-5 provide an opportunity to implement various circuit quantum electrodynamics devices6-8 with the added advantage of tuning the junction properties and the operating point using a gate potential. While other components of a possible 2D van der Waals circuit quantum electrodynamics architecture have been demonstrated, a quantum-noise-limited amplifier, an essential component, has not been realized, to the best of our knowledge. Here we implement a quantum-noise-limited JPA using a graphene JJ, that has a linear resonance gate tunability of 3.5 GHz. We report 24 dB amplification with 10 MHz bandwidth and -130 dBm saturation power, a performance on par with the best single-junction JPAs2,9. Importantly, our gate-tunable JPA works in the quantum-limited noise regime, which makes it an attractive option for highly sensitive signal processing. Our work has implications for novel bolometers; the low heat capacity of graphene together with JJ nonlinearity can result in an extremely sensitive microwave bolometer embedded inside a quantum-noise-limited amplifier. In general, this work will open up the exploration of scalable device architectures of 2D van der Waals materials by integrating a sensor with the quantum amplifier.
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Affiliation(s)
- Joydip Sarkar
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Kishor V Salunkhe
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Supriya Mandal
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Subhamoy Ghatak
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Alisha H Marchawala
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Ipsita Das
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - R Vijay
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India.
| | - Mandar M Deshmukh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India.
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10
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Fong KC. Graphene amplifier reaches the quantum limit. NATURE NANOTECHNOLOGY 2022; 17:1128-1129. [PMID: 36319754 DOI: 10.1038/s41565-022-01239-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
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11
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Di Battista G, Seifert P, Watanabe K, Taniguchi T, Fong KC, Principi A, Efetov DK. Revealing the Thermal Properties of Superconducting Magic-Angle Twisted Bilayer Graphene. NANO LETTERS 2022; 22:6465-6470. [PMID: 35917225 DOI: 10.1021/acs.nanolett.1c04512] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The allegedly unconventional superconducting phase of magic-angle twisted bilayer graphene (MATBG) has been predicted to possess extraordinary thermal properties, as it is formed from a highly diluted electron ensemble with a record-low carrier density (n) of ∼1011 cm-2 and electronic heat capacity (Ce) of <100kB. While these attributes position MATBG as a ground-breaking material platform for revolutionary calorimetric applications, these properties have so far not been experimentally shown. Here, we reveal the thermal properties of superconducting MATBG by monitoring its temperature dependent critical current (Ic) under continuous laser heating at 1550 nm. From the bolometric effect, we extract the temperature dependence of the electronic thermal conductance (Gth), which has a value of Gth = 0.2 pW/K at 35 mK and in the low temperature limit is consistent with a power law dependence, as expected for nodal superconductors. Our work lays the foundation for future thermal transport studies on this system.
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Affiliation(s)
- Giorgio Di Battista
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Paul Seifert
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
- Institute of Physics, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kin Chung Fong
- Quantum Engineering and Computing Group, Raytheon BBN Technologies, Cambridge, Massachusetts 02138, United States
| | - Alessandro Principi
- Department of Physics and Astronomy, The University of Manchester, M13 9PL Manchester, United Kingdom
| | - Dmitri K Efetov
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
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12
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Zhang Z, Lee Y, Haque MF, Leem J, Hsieh EY, Nam S. Plasmonic sensors based on graphene and graphene hybrid materials. NANO CONVERGENCE 2022; 9:28. [PMID: 35695997 PMCID: PMC9192873 DOI: 10.1186/s40580-022-00319-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2022] [Accepted: 05/26/2022] [Indexed: 05/07/2023]
Abstract
The past decade has witnessed a rapid growth of graphene plasmonics and their applications in different fields. Compared with conventional plasmonic materials, graphene enables highly confined plasmons with much longer lifetimes. Moreover, graphene plasmons work in an extended wavelength range, i.e., mid-infrared and terahertz regime, overlapping with the fingerprints of most organic and biomolecules, and have broadened their applications towards plasmonic biological and chemical sensors. In this review, we discuss intrinsic plasmonic properties of graphene and strategies both for tuning graphene plasmons as well as achieving higher performance by integrating graphene with plasmonic nanostructures. Next, we survey applications of graphene and graphene-hybrid materials in biosensors, chemical sensors, optical sensors, and sensors in other fields. Lastly, we conclude this review by providing a brief outlook and challenges of the field. Through this review, we aim to provide an overall picture of graphene plasmonic sensing and to suggest future trends of development of graphene plasmonics.
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Affiliation(s)
- Zhichao Zhang
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Yeageun Lee
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Md Farhadul Haque
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Juyoung Leem
- Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA.
- TomKat Center for Sustainable Energy, Stanford University, Stanford, CA, 94305, USA.
| | - Ezekiel Y Hsieh
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - SungWoo Nam
- Department of Mechanical and Aerospace Engineering, University of California Irvine, Irvine, CA, 92697, USA.
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13
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Huang Z, Cuniberto E, Park S, Kisslinger K, Wu Q, Taniguchi T, Watanabe K, Yager KG, Shahrjerdi D. Mechanisms of Interface Cleaning in Heterostructures Made from Polymer-Contaminated Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2201248. [PMID: 35388971 DOI: 10.1002/smll.202201248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2022] [Indexed: 06/14/2023]
Abstract
Heterostructures obtained from layered assembly of 2D materials such as graphene and hexagonal boron nitride have potential in the development of new electronic devices. Whereas various materials techniques can now produce macroscopic scale graphene, the construction of similar size heterostructures with atomically clean interfaces is still unrealized. A primary barrier has been the inability to remove polymeric residues from the interfaces that arise between layers when fabricating heterostructures. Here, the interface cleaning problem of polymer-contaminated heterostructures is experimentally studied from an energy viewpoint. With this approach, it is established that the interface cleaning mechanism involves a combination of thermally activated polymer residue mobilization and their mechanical actuation. This framework allows a systematic approach for fabricating record large-area clean heterostructures from polymer-contaminated graphene. These heterostructures provide state-of-the-art electronic performance. This study opens new strategies for the scalable production of layered materials heterostructures.
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Affiliation(s)
- Zhujun Huang
- Electrical and Computer Engineering, New York University, Brooklyn, NY, 11201, USA
| | - Edoardo Cuniberto
- Electrical and Computer Engineering, New York University, Brooklyn, NY, 11201, USA
| | - Suji Park
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Kim Kisslinger
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Qin Wu
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki, 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki, 305-0044, Japan
| | - Kevin G Yager
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Davood Shahrjerdi
- Electrical and Computer Engineering, New York University, Brooklyn, NY, 11201, USA
- Center for Quantum Phenomena, Physics Department, New York University, New York, NY, 10003, USA
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14
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The field-free Josephson diode in a van der Waals heterostructure. Nature 2022; 604:653-656. [PMID: 35478238 DOI: 10.1038/s41586-022-04504-8] [Citation(s) in RCA: 53] [Impact Index Per Article: 26.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Accepted: 02/02/2022] [Indexed: 11/08/2022]
Abstract
The superconducting analogue to the semiconducting diode, the Josephson diode, has long been sought with multiple avenues to realization being proposed by theorists1-3. Showing magnetic-field-free, single-directional superconductivity with Josephson coupling, it would serve as the building block for next-generation superconducting circuit technology. Here we realized the Josephson diode by fabricating an inversion symmetry breaking van der Waals heterostructure of NbSe2/Nb3Br8/NbSe2. We demonstrate that even without a magnetic field, the junction can be superconducting with a positive current while being resistive with a negative current. The ΔIc behaviour (the difference between positive and negative critical currents) with magnetic field is symmetric and Josephson coupling is proved through the Fraunhofer pattern. Also, stable half-wave rectification of a square-wave excitation was achieved with a very low switching current density, high rectification ratio and high robustness. This non-reciprocal behaviour strongly violates the known Josephson relations and opens the door to discover new mechanisms and physical phenomena through integration of quantum materials with Josephson junctions, and provides new avenues for superconducting quantum devices.
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15
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Telesio F, Carrega M, Cappelli G, Iorio A, Crippa A, Strambini E, Giazotto F, Serrano-Ruiz M, Peruzzini M, Heun S. Evidence of Josephson Coupling in a Few-Layer Black Phosphorus Planar Josephson Junction. ACS NANO 2022; 16:3538-3545. [PMID: 35099941 PMCID: PMC8945388 DOI: 10.1021/acsnano.1c09315] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/21/2021] [Accepted: 01/26/2022] [Indexed: 06/14/2023]
Abstract
Setting up strong Josephson coupling in van der Waals materials in close proximity to superconductors offers several opportunities both to inspect fundamental physics and to develop cryogenic quantum technologies. Here we show evidence of Josephson coupling in a planar few-layer black phosphorus junction. The planar geometry allows us to probe the junction behavior by means of external gates, at different carrier concentrations. Clear signatures of Josephson coupling are demonstrated by measuring supercurrent flow through the junction at milli-Kelvin temperatures. Manifestation of a Fraunhofer pattern with a transverse magnetic field is also reported, confirming the Josephson coupling. These findings represent evidence of proximity Josephson coupling in a planar junction based on a van der Waals material beyond graphene and will expedite further studies, exploiting the peculiar properties of exfoliated black phosphorus thin flakes.
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Affiliation(s)
- Francesca Telesio
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | | | - Giulio Cappelli
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Andrea Iorio
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Alessandro Crippa
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Elia Strambini
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Francesco Giazotto
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | | | | | - Stefan Heun
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
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16
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Ritter MF, Crescini N, Haxell DZ, Hinderling M, Riel H, Bruder C, Fuhrer A, Nichele F. Out-of-equilibrium phonons in gated superconducting switches. NATURE ELECTRONICS 2022; 5:71-77. [PMID: 35310295 PMCID: PMC8885403 DOI: 10.1038/s41928-022-00721-1] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2021] [Accepted: 01/19/2022] [Indexed: 06/13/2023]
Abstract
Recent experiments have suggested that superconductivity in metallic nanowires can be suppressed by the application of modest gate voltages. The source of this gate action has been debated and either attributed to an electric-field effect or to small leakage currents. Here we show that the suppression of superconductivity in titanium nitride nanowires on silicon substrates does not depend on the presence or absence of an electric field at the nanowire, but requires a current of high-energy electrons. The suppression is most efficient when electrons are injected into the nanowire, but similar results are obtained when electrons are passed between two remote electrodes. This is explained by the decay of high-energy electrons into phonons, which propagate through the substrate and affect superconductivity in the nanowire by generating quasiparticles. By studying the switching probability distribution of the nanowire, we also show that high-energy electron emission leads to a much broader phonon energy distribution compared with the case where superconductivity is suppressed by Joule heating near the nanowire.
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Affiliation(s)
- M. F. Ritter
- IBM Quantum, IBM Research—Zurich, Rüschlikon, Switzerland
| | - N. Crescini
- IBM Quantum, IBM Research—Zurich, Rüschlikon, Switzerland
| | - D. Z. Haxell
- IBM Quantum, IBM Research—Zurich, Rüschlikon, Switzerland
| | - M. Hinderling
- IBM Quantum, IBM Research—Zurich, Rüschlikon, Switzerland
| | - H. Riel
- IBM Quantum, IBM Research—Zurich, Rüschlikon, Switzerland
| | - C. Bruder
- Department of Physics, University of Basel, Basel, Switzerland
| | - A. Fuhrer
- IBM Quantum, IBM Research—Zurich, Rüschlikon, Switzerland
| | - F. Nichele
- IBM Quantum, IBM Research—Zurich, Rüschlikon, Switzerland
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17
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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18
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Wang H, Guo J, Miao J, Luo W, Gu Y, Xie R, Wang F, Zhang L, Wang P, Hu W. Emerging Single-Photon Detectors Based on Low-Dimensional Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2103963. [PMID: 34632717 DOI: 10.1002/smll.202103963] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2021] [Revised: 08/27/2021] [Indexed: 06/13/2023]
Abstract
Single-photon detectors (SPDs) that can sense individual photons are the most sensitive instruments for photodetection. Established SPDs such as conventional silicon or III-V compound semiconductor avalanche diodes and photomultiplier tubes have been used in a wide range of time-correlated photon-counting applications, including quantum information technologies, in vivo biomedical imaging, time-of-flight 3D scanners, and deep-space optical communications. However, further development of these fields requires more sophisticated detectors with high detection efficiency, fast response, and photon-number-resolving ability, etc. Thereby, significant efforts have been made to improve the performance of conventional SPDs and to develop new photon-counting technologies. In this review, the working mechanisms and key performance metrics of conventional SPDs are first summarized. Then emerging photon-counting detectors (in the visible to infrared range) based on 0D quantum dots, 1D quantum nanowires, and 2D layered materials are discussed. These low-dimensional materials exhibit many exotic properties due to the quantum confinement effect. And photodetectors built from these nD-materials (n = 0, 1, 2) can potentially be used for ultra-weak light detection. By reviewing the status and discussing the challenges faced by SPDs, this review aims to provide future perspectives on the research directions of emerging photon-counting technologies.
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Affiliation(s)
- Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Wenjin Luo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Yue Gu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lili Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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19
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Pal B, Chakraborty A, Sivakumar PK, Davydova M, Gopi AK, Pandeya AK, Krieger JA, Zhang Y, Date M, Ju S, Yuan N, Schröter NBM, Fu L, Parkin SSP. Josephson diode effect from Cooper pair momentum in a topological semimetal. NATURE PHYSICS 2022; 18:1228-1233. [PMID: 36217362 PMCID: PMC9537108 DOI: 10.1038/s41567-022-01699-5] [Citation(s) in RCA: 36] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Accepted: 06/29/2022] [Indexed: 05/16/2023]
Abstract
Cooper pairs in non-centrosymmetric superconductors can acquire finite centre-of-mass momentum in the presence of an external magnetic field. Recent theory predicts that such finite-momentum pairing can lead to an asymmetric critical current, where a dissipationless supercurrent can flow along one direction but not in the opposite one. Here we report the discovery of a giant Josephson diode effect in Josephson junctions formed from a type-II Dirac semimetal, NiTe2. A distinguishing feature is that the asymmetry in the critical current depends sensitively on the magnitude and direction of an applied magnetic field and achieves its maximum value when the magnetic field is perpendicular to the current and is of the order of just 10 mT. Moreover, the asymmetry changes sign several times with an increasing field. These characteristic features are accounted for by a model based on finite-momentum Cooper pairing that largely originates from the Zeeman shift of spin-helical topological surface states. The finite pairing momentum is further established, and its value determined, from the evolution of the interference pattern under an in-plane magnetic field. The observed giant magnitude of the asymmetry in critical current and the clear exposition of its underlying mechanism paves the way to build novel superconducting computing devices using the Josephson diode effect.
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Affiliation(s)
- Banabir Pal
- Max Planck Institute of Microstructure Physics, Halle (Saale), Germany
| | | | | | - Margarita Davydova
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA USA
| | - Ajesh K. Gopi
- Max Planck Institute of Microstructure Physics, Halle (Saale), Germany
| | | | - Jonas A. Krieger
- Max Planck Institute of Microstructure Physics, Halle (Saale), Germany
| | - Yang Zhang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA USA
| | - Mihir Date
- Max Planck Institute of Microstructure Physics, Halle (Saale), Germany
| | - Sailong Ju
- Swiss Light Source, Paul Scherrer Institute, Villigen PSI, Switzerland
| | - Noah Yuan
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA USA
| | | | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA USA
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20
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Antony A, Gustafsson MV, Rajendran A, Benyamini A, Ribeill G, Ohki TA, Hone J, Fong KC. Making high-quality quantum microwave devices with van der Waals superconductors. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:103001. [PMID: 34847535 DOI: 10.1088/1361-648x/ac3e9d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2021] [Accepted: 11/30/2021] [Indexed: 06/13/2023]
Abstract
Ultra low-loss microwave materials are crucial for enhancing quantum coherence and scalability of superconducting qubits. Van der Waals (vdW) heterostructure is an attractive platform for quantum devices due to the single-crystal structure of the constituent two-dimensional (2D) layered materials and the lack of dangling bonds at their atomically sharp interfaces. However, new fabrication and characterization techniques are required to determine whether these structures can achieve low loss in the microwave regime. Here we report the fabrication of superconducting microwave resonators using NbSe2that achieve a quality factorQ> 105. This value sets an upper bound that corresponds to a resistance of⩽192μΩwhen considering the additional loss introduced by integrating NbSe2into a standard transmon circuit. This work demonstrates the compatibility of 2D layered materials with high-quality microwave quantum devices.
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Affiliation(s)
- Abhinandan Antony
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, United States of America
| | - Martin V Gustafsson
- Raytheon BBN Technologies, Quantum Engineering and Computing Group, Cambridge, MA 02138, United States of America
| | - Anjaly Rajendran
- Department of Electrical Engineering, Columbia University, New York, NY 10027, United States of America
| | - Avishai Benyamini
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, United States of America
| | - Guilhem Ribeill
- Raytheon BBN Technologies, Quantum Engineering and Computing Group, Cambridge, MA 02138, United States of America
| | - Thomas A Ohki
- Raytheon BBN Technologies, Quantum Engineering and Computing Group, Cambridge, MA 02138, United States of America
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, United States of America
| | - Kin Chung Fong
- Raytheon BBN Technologies, Quantum Engineering and Computing Group, Cambridge, MA 02138, United States of America
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