Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

Integrated circuits (ICs) are challenged to deliver historically anticipated performance improvements while increasing the cost and complexity of the technology with each generation. Front-end-of-line (FEOL) processes have provided various solutions to this predicament, whereas the back-end-of-line (BEOL) processes have taken a step back. With continuous IC scaling, the speed of the entire chip has reached a point where its performance is determined by the performance of the interconnect that bridges billions of transistors and other devices. Consequently, the demand for advanced interconnect metallization rises again, and various aspects must be considered. This review explores the quest for new materials for successfully routing nanoscale interconnects. The challenges in the interconnect structures as physical dimensions shrink are first explored. Then, various problem-solving options are considered based on the properties of materials. New materials are also introduced for barriers, such as 2D materials, self-assembled molecular layers, high-entropy alloys, and conductors, such as Co and Ru, intermetallic compounds, and MAX phases. The comprehensive discussion of each material includes state-of-the-art studies ranging from the characteristics of materials by theoretical calculation to process applications to the current interconnect structures. This review intends to provide a materials-based implementation strategy to bridge the gap between academia and industry.

Structural Signatures of Ultrastability in a Deposited Glassformer

Glasses obtained from vapor deposition on a cold substrate have superior thermodynamic and kinetic stability with respect to ordinary glasses. Here we perform molecular dynamics simulations of vapor deposition of a model glassformer and investigate the origin of its high stability compared to that of ordinary glasses. We find that the vapor deposited glass is characterized by locally favored structures (LFSs) whose occurrence correlates with its stability, reaching a maximum at the optimal deposition temperature. The formation of LFSs is enhanced near the free surface, hence supporting the idea that the stability of vapor deposited glasses is connected to the relaxation dynamics at the surface.

Anisotropic Resistivity Size Effect in Epitaxial Mo(001) and Mo(011) Layers

Mo(001) and Mo(011) layers with thickness d = 4-400 nm are sputter-deposited onto MgO(001) and α-Al₂O₃(112¯0) substrates and their resistivity is measured in situ and ex situ at room temperature and 77 K in order to quantify the resistivity size effect. Both Mo(001) and Mo(011) layers are epitaxial single crystals and exhibit a resistivity increase with decreasing d due to electron surface scattering that is well described by the classical Fuchs and Sondheimer model. Data fitting yields room temperature effective electron mean free paths λ^*= 14.4 ± 0.3 and 11.7 ± 0.3 nm, respectively, indicating an anisotropy with a smaller resistivity size effect for the Mo(011) orientation. This is attributed to a smaller average Fermi velocity component perpendicular to (011) surfaces, causing less surface scattering and a suppressed resistivity size effect. First-principles electronic structure calculations in combination with Boltzmann transport simulations predict an orientation dependent transport with a more pronounced resistivity increase for Mo(001) than Mo(011). This is in agreement with the measurements, confirming the effect of the Fermi surface shape on the thin-film resistivity. The predicted anisotropy λ001*/λ011* = 1.57 is in reasonable agreement with 1.66 and 1.23 measured at 77 and 295 K. The overall results indicate that the resistivity size effect in Mo is relatively small, with a measured product of the bulk resistivity times the effective electron mean free path ρ_oλ^* = (7.7 ± 0.3) and (6.2 ± 0.2) × 10^-16 Ωm² for Mo(001) and Mo(011) layers. The latter value is in excellent agreement with the first-principles-predicted ρ_oλ = 5.99 × 10^-16 Ωm² and is 10% and 40% smaller than the reported measured ρ_oλ for Cu and W, respectively, indicating the promise of Mo as an alternate conductor for narrow interconnects.

In Situ Study of Twin Boundary Stability in Nanotwinned Copper Pillars under Different Strain Rates

The nanoscopic deformation of ⟨111⟩ nanotwinned copper nanopillars under strain rates between 10^-5/s and 5 × 10^-4/s was studied by using in situ transmission electron microscopy. The correlation among dislocation activity, twin boundary instability due to incoherent twin boundary migration and corresponding mechanical responses was investigated. Dislocations piled up in the nanotwinned copper, giving rise to significant hardening at relatively high strain rates of 3-5 × 10^-4/s. Lower strain rates resulted in detwinning and reduced hardening, while corresponding deformation mechanisms are proposed based on experimental results. At low/ultralow strain rates below 6 × 10^-5/s, dislocation activity almost ceased operating, but the migration of twin boundaries via the 1/4 ⟨101¯ ⟩ kink-like motion of atoms is suggested as the detwinning mechanism. At medium strain rates of 1-2 × 10^-4/s, detwinning was decelerated likely due to the interfered kink-like motion of atoms by activated partial dislocations, while dislocation climb may alternatively dominate detwinning. These results indicate that, even for the same nanoscale twin boundary spacing, different nanomechanical deformation mechanisms can operate at different strain rates.

Plasma Oxidation of Copper: Molecular Dynamics Study with Neural Network Potentials

The formation of thin oxide films is of significant scientific and practical interest. In particular, the semiconductor industry is interested in developing a plasma atomic layer etching process to pattern copper, replacing the dual Damascene process. Using a nonthermal oxygen plasma to convert the metallic copper into copper oxide, followed by a formic acid organometallic reaction to etch the copper oxide, this process has shown great promise. However, the current process is not optimal because the plasma oxidation step is not self-limiting, hampering the degree of thickness control. In the present study, a neural network potential for the binary interaction between copper and oxygen is developed and validated against first-principles calculations. This potential covers the entire range of potential energy surfaces of metallic copper, copper oxides, atomic oxygen, and molecular oxygen. The usable kinetic energy ranges from 0 to 20 eV. Using this potential, the plasma oxidation of copper surfaces was studied with large-scale molecular dynamics at atomic resolution, with an accuracy approaching that of the first principle calculations. An amorphous layer of CuO is formed on Cu, with thicknesses reaching 2.5 nm. Plasma is found to create an intense local heating effect that rapidly dissipates across the thickness of the film. The range of this heating effect depends on the kinetic energy of the ions. A higher ion energy leads to a longer range, which sustains faster-than-thermal rates for longer periods of time for the oxide growth. Beyond the range of this agitation, the growth is expected to be limited to the thermally activated rate. High-frequency, repeated ion impacts result in a microannealing effect that leads to a quasicrystalline oxide beneath the amorphized layer. The crystalline layer slows down oxide growth. Growth rate is fitted to the temperature gradient due to ion-induced thermal agitations, to obtain an apparent activation energy of 1.0 eV. A strategy of lowering the substrate temperature and increasing plasma power is proposed as being favorable for more self-limited oxidation.

Oriented Attachment: From Natural Crystal Growth to a Materials Engineering Tool

ConspectusIntuitively, chemists see crystals grow atom-by-atom or molecule-by-molecule, very much like a mason builds a wall, brick by brick. It is much more difficult to grasp that small crystals can meet each other in a liquid or at an interface, start to align their crystal lattices and then grow together to form one single crystal. In analogy, that looks more like prefab building. Yet, this is what happens in many occasions and can, with reason, be considered as an alternative mechanism of crystal growth. Oriented attachment is the process in which crystalline colloidal particles align their atomic lattices and grow together into a single crystal. Hence, two aligned crystals become one larger crystal by epitaxy of two specific facets, one of each crystal. If we simply consider the system of two crystals, the unifying attachment reduces the surface energy and results in an overall lower (free) energy of the system. Oriented attachment often occurs with massive numbers of crystals dispersed in a liquid phase, a sol or crystal suspension. In that case, oriented attachment lowers the total free energy of the crystal suspension, predominantly by removal of the nanocrystal/liquid interface area. Accordingly, we should start by considering colloidal suspensions with crystals as the dispersed phase, i.e., "sols", and discuss the reasons for their thermodynamic (meta)stability and how this stability can be lowered such that oriented attachment can occur as a spontaneous thermodynamic process. Oriented attachment is a process observed both for charge-stabilized crystals in polar solvents and for ligand capped nanocrystal suspensions in nonpolar solvents. In this last system different facets can develop a very different reactivity for oriented attachment. Due to this facet selectivity, crystalline structures with very specific geometries can be grown in one, two, or three dimensions; controlled oriented attachment suddenly becomes a tool for material scientists to grow architectures that cannot be reached by any other means. We will review the work performed with PbSe and CdSe nanocrystals. The entire process, i.e., the assembly of nanocrystals, atomic alignment, and unification by attachment, is a very complex and intriguing process. Researchers have succeeded in monitoring these different steps with in situ wave scattering methods and real-space (S)TEM studies. At the same time coarse-grained molecular dynamics simulations have been used to further study the forces involved in self-assembly and attachment at an interface. We will briefly come back to some of these results in the last sections of this review.

Formation of Size and Density Controlled Nanostructures by Galvanic Displacement

Gold (Au) and copper (Cu)-based nanostructures are of great interest due to their applicability in various areas including catalysis, sensing and optoelectronics. Nanostructures synthesized by the galvanic displacement method often lead to non-uniform density and poor size distribution. Here, density and size-controlled synthesis of Au and Cu-based nanostructures was made possible by galvanic displacement with limited exposure to hydrofluoric (HF) acid and the use of surfactants like L-cysteine (L-Cys) and cetyltrimethylammonium bromide (CTAB). An approach involving cyclic exposure to HF acid regulated the nanostructure density. Further, the use of surfactants generated monodisperse nanoparticles in the initial stages of the deposition with increased density. The characterization of Au and Cu-based nanostructures was performed by scanning electron microscopy, atomic force microscopy, UV-Visible spectroscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and X-ray diffraction. The surface enhanced Raman spectroscopic measurements demonstrated an increase in the Raman intensity by two to three orders of magnitude for analyte molecules like Rhodamine 6G dye and paraoxon.

Controlled growth of Cu and CuOx thin films from subvalent copper precursors

Volatile mixed-ligand complexes of copper based on stabilizing cyclooctadiene and reactive enaminone are reported as efficient precursors for chemical vapor deposition of Cu(0), Cu₂O, or CuO thin films.

Interfacing a Potential Purely Organic Molecular Quantum Bit with a Real-Life Surface

By using a multidisciplinary and multitechnique approach, we have addressed the issue of attaching a molecular quantum bit to a real surface. First, we demonstrate that an organic derivative of the pyrene-Blatter radical is a potential molecular quantum bit. Our study of the interface of the pyrene-Blatter radical with a copper-based surface reveals that the spin of the interface layer is not canceled by the interaction with the surface and that the Blatter radical is resistant in presence of molecular water. Although the measured pyrene-Blatter derivative quantum coherence time is not the highest value known, this molecule is known as a "super stable" radical. Conversely, other potential qubits show poor thin film stability upon air exposure. Therefore, we discuss strategies to make molecular systems candidates as qubits competitive, bridging the gap between potential and real applications.

Instrumentation for in situ flow electrochemical Scanning Transmission X-ray Microscopy (STXM)

We report the design and performance of a 3-electrode device for real time in situ scanning transmission X-ray microscopy studies of electrochemical processes under both static (sealed, non-flow) conditions and with a continuous flow of electrolytes. The device was made using a combination of silicon microfabrication and 3D printing technologies. The performance is illustrated by results of a study of copper deposition and stripping at a gold working electrode. X-ray absorption spectromicroscopy at the Cu 2p edge was used to follow the evolution as a function of potential and time of the spatial distributions of Cu(0) and Cu(i) species electro-deposited from an aqueous solution of copper sulphate. The results are interpreted in terms of competing mechanisms for the reduction of Cu(ii).

Chemical bonding and Cu diffusion at the Cu/Ta2N interface: a DFT study

DFT calculations were performed to study chemical bonding and Cu diffusion at the Cu/Ta₂N interface.

Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process

We report on a new route to grow epitaxial copper (Cu) ultra-thin films (up to 150 nm thick) at ambient temperature on Si(001) wafers covered with native oxide without any prior chemical etching or plasma cleaning of the substrate. It consists of a single-step deposition process using high power impulse magnetron sputtering (HiPIMS) and substrate biasing. For a direct current (DC) substrate bias voltage of −130 V, Cu/Si heteroepitaxial growth is achieved by HiPIMS following the Cu(001) [100]//Si(001) [110] orientation, while under the same average deposition conditions, but using conventional DC magnetron sputtering, polycrystalline Cu films with [111] preferred orientation are deposited. In addition, the intrinsic stress has been measured in situ during growth by real-time monitoring of the wafer curvature. For this particular HiPIMS case, the stress is slightly compressive (−0.1 GPa), but almost fully relaxes after growth is terminated. As a result of epitaxy, the Cu surface morphology exhibits a regular pattern consisting of square-shaped mounds with a lateral size of typically 150 nm. For all samples, X-ray diffraction pole figures and scanning/transmission electron microscopy reveal the formation of extensive twinning of the Cu {111} planes.

Grain coarsening in two-dimensional phase-field models with an orientation field

In the literature, contradictory results have been published regarding the form of the limiting (long-time) grain size distribution (LGSD) that characterizes the late stage grain coarsening in two-dimensional and quasi-two-dimensional polycrystalline systems. While experiments and the phase-field crystal (PFC) model (a simple dynamical density functional theory) indicate a log-normal distribution, other works including theoretical studies based on conventional phase-field simulations that rely on coarse grained fields, like the multi-phase-field (MPF) and orientation field (OF) models, yield significantly different distributions. In a recent work, we have shown that the coarse grained phase-field models (whether MPF or OF) yield very similar limiting size distributions that seem to differ from the theoretical predictions. Herein, we revisit this problem, and demonstrate in the case of OF models [R. Kobayashi, J. A. Warren, and W. C. Carter, Physica D 140, 141 (2000)PDNPDT0167-278910.1016/S0167-2789(00)00023-3; H. Henry, J. Mellenthin, and M. Plapp, Phys. Rev. B 86, 054117 (2012)PRBMDO1098-012110.1103/PhysRevB.86.054117] that an insufficient resolution of the small angle grain boundaries leads to a log-normal distribution close to those seen in the experiments and the molecular scale PFC simulations. Our paper indicates, furthermore, that the LGSD is critically sensitive to the details of the evaluation process, and raises the possibility that the differences among the LGSD results from different sources may originate from differences in the detection of small angle grain boundaries.

Effect of improved contact on reliability of sub-60 nm carbon nanotube vias

Advances in semiconductor technology due to the aggressive downward scaling of on-chip feature sizes have led to rapid rises in the resistivity and current density of interconnect conductors. As a result, current interconnect materials, Cu and W, are subject to performance and reliability constraints approaching or exceeding their physical limits. Therefore, alternative materials are being actively considered as potential replacements to meet such constraints. The carbon nanotube (CNT) is among the leading replacement candidates for on-chip interconnect vias due to its high aspect-ratio nanostructure and superior current-carrying capacity to Cu and W, as well as other potential candidates. Based on the results for 40 nm and 60 nm top-contact metallized CNT vias, we demonstrate that not only are their current-carrying capacities two orders of magnitude higher than their Cu and W counterparts, they are enhanced by reduced via resistance due to contact engineering facilitated by the first reported contact resistance extraction scheme for a 40 nm linewidth.

Surface chemistry of copper metal and copper oxide atomic layer deposition from copper(ii) acetylacetonate: a combined first-principles and reactive molecular dynamics study

Atomistic mechanisms for the atomic layer deposition using the Cu(acac)₂ (acac = acetylacetonate) precursor are studied using first-principles calculations and reactive molecular dynamics simulations.

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al₂O₃ (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10⁻³ Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Effect of grain orientations of Cu seed layers on the growth of <111>-oriented nanotwinned Cu

We investigate the growth of Cu films on two different Cu seed layers: one with regular <111>-oriented grains and the other with very strong <111>-preferred orientation. It is found that densely-packed nanotwinned Cu (nt-Cu) can be grown by pulsed electroplating on the strong <111>-oriented Cu seed layer without a randomly-oriented transition layer between the nt-Cu and the Cu seed layer. The electroplated nt-Cu grow almost epitaxially on the seed layer and formed <111>-oriented columnar structures. However, with the regular <111>-oriented Cu seed, there is a randomly-oriented transition layer between the nt-Cu and the regular <111>-oriented Cu seed. The results indicate that the seed layer plays a crucial role on the regularity of <111>-oriented nanotwinned Cu.

Room-temperature epitaxial electrodeposition of single-crystalline germanium nanowires at the wafer scale from an aqueous solution

Direct epitaxial growth of single-crystalline germanium (Ge) nanowires at room temperature has been performed through an electrodeposition process on conductive wafers immersed in an aqueous bath. The crystal growth is based on an electrochemical liquid-liquid-solid (ec-LLS) process involving the electroreduction of dissolved GeO2(aq) in water at isolated liquid gallium (Ga) nanodroplet electrodes resting on single-crystalline Ge or Si supports. Ge nanowires were electrodeposited on the wafer scale (>10 cm(2)) using only common glassware and a digital potentiostat. High-resolution electron micrographs and electron diffraction patterns collected from cross sections of individual substrate-nanowire contacts in addition to scanning electron micrographs of the orientation of nanowires across entire films on substrates with different crystalline orientations, supported the notion of epitaxial nanowire growth. Energy dispersive spectroscopic elemental mapping of single nanowires indicated the Ga(l) nanodroplet remains affixed to the tip of the growing nanowire throughout the nanowire electrodeposition process. Current-voltage responses measured across many individual nanowires yielded reproducible resistance values. The presented data cumulatively show epitaxial growth of covalent group IV nanowires is possible from the reduction of a dissolved oxide under purely benchtop conditions.

Laser annealing of nanocrystalline gold nanowires

The efficacy of laser annealing for the thermal annealing of nanocrystalline gold nanowires is evaluated. Continuous laser illumination at 532 nm, focused to a 0.5 μm diameter spot, was rastered perpendicular to the axis of nanocrystalline gold nanowire at ∼2 kHz. This rastered beam was then scanned down the nanowire at velocities from 7 to 112 nm/s. The influence on the electrical resistance of the gold nanowire of laser power, polarization, translation speed, and nanowire width were evaluated. Nanocrystalline gold nanowires were prepared on glass surfaces using the lithographically patterned nanowire electrodeposition (LPNE) method. These nanowires had a rectangular cross section with a height of 20 (± 3) nm and widths ranging from 76 to 274 nm. The 4-contact electrical resistance of the nanowire is measured in situ during laser annealing and a real-time decrease in electrical resistance of between 30 and 65% is observed, depending upon the laser power and scan rate along the nanowire. These resistance decreases are associated with an increase in the mean grain diameter within these nanowires, measured using transmission electron microscopy, of up to 300%. The observed decrease in the electrical resistance induced by laser annealing conforms to classical predictions based upon the reduction in grain boundary scattering induced by grain growth.

Fabrication and Characterization of Cu-Plated Fine Pitch Patterns on Flexible Polyimide

The thin flexible Polyimides (PI) films have desirable properties for use in the electrical and electronics industry because their good thermal stability, high flexibility, low dielectric constants, excellent mechanical strength, low loss tangent, low relative permittivity and electrical insulating properties. In order to determine the process window of the surface metallization of PI, the fine traces with 50 micron pitch (25micron line /space) built on a flexible 50 micron thick PI film using wet fabrication process are reported in this paper. The thick copper (Cu) film was obtained from the Cu plating process using evaporated thin film of Cu as the adhesion layer. The fabricated fanout fine patterns are further investigated using scanning electron microscope (SEM), energy-dispersive spectrometry (EDS) and X-ray spectrometry technologies. The experiment is conducted to study the effect of the process parameters on the Cu film surface properties. The results obtained in this work can be applied to the fabrication of flexible microelectronic devices.

MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices

We study the electro optical properties of a Metal-Nitride-Oxide-Silicon (MNOS) stack for a use in CMOS compatible plasmonic active devices. We show that the insertion of an ultrathin stoichiometric Si(3)N(4) layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNOS capacitance from 50 to 95% thanks to a diffusion barrier effect, while preserving the low optical losses brought by the use of copper as the plasmon supporting metal. An experimental investigation is undertaken at a wafer scale using some CMOS standard processes of the LETI foundry. Optical transmission measurments conducted in a MNOS channel waveguide configuration coupled to standard silicon photonics circuitry confirms the very low optical losses (0.39 dB.μm(-1)), in good agreement with predictions using ellipsometric optical constants of Cu.

Effect of downscaling nano-copper interconnects on the microstructure revealed by high resolution TEM-orientation-mapping

In this work, a recently developed electron diffraction technique called diffraction scanning transmission electron microscopy (D-STEM) is coupled with precession electron microscopy to obtain quantitative local texture information in damascene copper interconnects (1.8 µm-70 nm in width) with a spatial resolution of less than 5 nm. Misorientation and trace analysis is performed to investigate the grain boundary distribution in these lines. The results reveal strong variations in texture and grain boundary distribution of the copper lines upon downscaling. Lines of width 1.8 µm exhibit a strong <111> normal texture and comprise large micron-size grains. Upon downscaling to 180 nm, a {111}<110> bi-axial texture has been observed. In contrast, narrower lines of widths 120 and 70 nm reveal sidewall growth of {111} grains and a dominant <110> normal texture. The microstructure in these lines comprises clusters of small grains separated by high angle boundaries in the vicinity of large grains. The fraction of coherent twin boundaries also reduces with decreasing line width.

Thin and Smooth Cu Seed Layer Deposition using the Reduction of Low Temperature Deposited Cu2O

Thin and continuous CVD Cu seed layer was successfully deposited on Ru under-layer by Cu oxide deposition and reduction method at 100°C with novel chemistry. Cu oxide was formed with Cu(hface)TMVS and H2O2 at 100°C, and this film was reduced with formic acid at 100°C. Deposited Cu oxide films were Cu2O that was confirmed by XRD and XPS. The morphology of oxide films showed smooth and continuous on Ru and Ta substrate. The reduced Cu film on Ru maintained good surface morphology, and no impurity was detected not only in the Cu film but also the interface between Cu and Ru. However, that on Ta had poor morphology by agglomeration of Cu film during reduction due to poor Cu wettability on oxidized Ta that was oxidized during oxide deposition. The readiness of reduction is very important merit of using Ru under-layer for this oxide deposition and reduction process. The oxide deposition and reduction method on Ru under-layer can be a promising candidate for thin and continuous seed layer deposition method.

Profile evolution for conformal atomic layer deposition over nanotopography

The self-limiting reactions which distinguish atomic layer deposition (ALD) provide ultrathin film deposition with superb conformality over the most challenging topography. This work addresses how the shapes (i.e., surface profiles) of nanostructures are modified by the conformality of ALD. As a nanostructure template, we employ a highly scalloped surface formed during the first anodization of the porous anodic alumina (PAA) process, followed by removal of the alumina to expose a scalloped Al surface. SEM and AFM reveal evolution of surface profiles that change with ALD layer thickness, influenced by the way ALD conformality decorates the underlying topography. The evolution of surface profiles is modeled using a simple geometric 3D extrusion model, which replicates the measured complex surface topography. Excellent agreement is obtained between experimental data and the results from this model, suggesting that for this ALD system conformality is very high even on highly structured, sharp features of the initial template surface. Through modeling and experimentation, the benefits of ALD to manipulate complex surface topographies are recognized and will play an important role in the design and nanofabrication of next generation devices with increasingly high aspect ratios as well as nanoscale features.

Dewetting of copper nanolayers on silica in oxygen: towards preparation of copper meso/nanowires by self-organization

The present study has examined the thermal behavior of copper on silicon oxide to clarify the diffusion of copper on dielectrics in an oxygen environment. Films of copper-deposited silicon oxide were prepared on silicon wafers and then annealed in oxygen. Self-organization of copper occurred to form line structures of multiple strips in a specific oxygen pressure range. The line orientation of the produced structures was related to the line defects formed from termination of stacking faults and dislocations at the wafer surface. The line density was determined by the oxygen pressure used. The results underline a possibility of synthesizing copper meso/nanowires on dielectrics via self-organization.

Synthesis and Characterization of Copper(I) Amidinates as Precursors for Atomic Layer Deposition (ALD) of Copper Metal

A series of copper(I) amidinates of the general type [(R'NC(R)NR'')Cu](2) (R' and R'' = n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl; R = methyl, n-butyl) have been synthesized and characterized. These compounds are planar dimers, bridged by nearly linear N-Cu-N bonds. Their properties (volatility, low melting point, high thermal stability, and self-limited surface reactivity) are well-suited for atomic layer deposition (ALD) of copper metal films that are pure, highly conductive, conformal, and strongly adherent to substrates.

Large-area patterning of coinage-metal thin films using decal transfer lithography

We describe two new procedures that appear to hold significant promise as means for patterning thin-film microstructures of the coinage metals (Cu, Ag, Au). A feature central to both is the modification of their surfaces to promote the adhesive transfer of PDMS thin-film microstructures, a material suitable for use as resist layers in large-area patterning, using Decal Transfer Lithography (DTL). The present work provides a significant extension of the capabilities of DTL patterning, providing general protocols that can be used to transfer decal resists to essentially any substrate surface. The first method involves the functionalization of a surface, specifically those of gold and silver films with a thiol-terminated silane coupling agent, (mercaptopropyl)trimethoxysilane. This self-assembled monolayer, when hydrolyzed to its silanol form, provides a robust adhesion-promoting layer suitable for use in DTL patterning. The second method exploits the surface chemistry provided by the deposition of a nanoscale silicon dioxide thin-film capping layer using e-beam evaporation. This procedure provides an exceptional method for patterning large-area, thin-film microstructures of Cu-one compatible with micrometer-scale design rules-that are essentially defect free. Both surface modification strategies enable high-quality poly(dimethylsiloxane) decal transfers, and as the current work shows, these structures are suitable for large-area micrometer-sized patterning of gold, silver, and copper thin films via both wet-etching and lift-off procedures.

Dynamic microscopy of nanoscale cluster growth at the solid-liquid interface

Dynamic processes at the solid-liquid interface are of key importance across broad areas of science and technology. Electrochemical deposition of copper, for example, is used for metallization in integrated circuits, and a detailed understanding of nucleation, growth and coalescence is essential in optimizing the final microstructure. Our understanding of processes at the solid-vapour interface has advanced tremendously over the past decade due to the routine availability of real-time, high-resolution imaging techniques yielding data that can be compared quantitatively with theory. However, the difficulty of studying the solid-liquid interface leaves our understanding of processes there less complete. Here we analyse dynamic observations--recorded in situ using a novel transmission electron microscopy technique--of the nucleation and growth of nanoscale copper clusters during electrodeposition. We follow in real time the evolution of individual clusters, and compare their development with simulations incorporating the basic physics of electrodeposition during the early stages of growth. The experimental technique developed here is applicable to a broad range of dynamic phenomena at the solid-liquid interface.