Metal-to-Insulator Transition in Ultrathin Manganite Heterostructures

An atomically controlled insulator-to-metal transition in iridate/manganite heterostructures

All-insulator heterostructures with an emerging metallicity are at the forefront of material science, which typically contain at least one band insulator while it is not necessary to be. Here we show emergent phenomena in a series of all-correlated-insulator heterostructures that composed of insulating CaIrO3 and insulating La0.67Sr0.33MnO3. We observed an intriguing insulator-to-metal transition, that depends delicately on the thickness of the iridate component. The simultaneous enhancements of magnetization, electric conductivity, and magnetoresistance effect indicate a percolation-type nature of the insulator-to-metal transition, with the percolation threshold can be reached at an exceptionally low volume fraction of the iridate. Such a drastic transition is induced by an interfacial charge transfer, which interestingly alters the electronic and crystalline structures of the bulk region rather than the limited ultrathin interface. We further showcased the central role of effective correlation in modulating the insulator-to-metal transition, by demonstrating that the critical thickness of iridate for triggering the metallic state can be systematically reduced down to a single unit-cell layer.

Evolution of the surface atomic structure of multielement oxide films: curse or blessing?

Atomically resolved scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) are used to gain atomic-scale insights into the heteroepitaxy of lanthanum-strontium manganite (LSMO, La1-xSrxMnO3-δ, x ≈ 0.2) on SrTiO3(110). LSMO is a perovskite oxide characterized by several composition-dependent surface reconstructions. The flexibility of the surface allows it to incorporate nonstoichiometries during growth, which causes the structure of the surface to evolve accordingly. This happens up to a critical point, where phase separation occurs, clusters rich in the excess cations form at the surface, and films show a rough morphology. To limit the nonstoichiometry introduced by non-optimal growth conditions, it proves useful to monitor the changes in surface atomic structures as a function of the PLD parameters and tune the latter accordingly.

Chemical Synthesis of La0.75Sr0.25CrO3 Thin Films for p-Type Transparent Conducting Electrodes

The imperative need for highly performant and stable p-type transparent electrodes based on abundant metals is stimulating the research on perovskite oxide thin films. Moreover, exploring the preparation of these materials with the use of cost-efficient and scalable solution-based techniques is a promising approach to extract their full potential. Herein, we present the design of a chemical route, based on metal nitrate precursors, for the preparation of pure phase La0.75Sr0.25CrO3 (LSCO) thin films to be used as a p-type transparent conductive electrode. Different solution chemistries have been evaluated to ultimately obtain dense, epitaxial, and almost relaxed LSCO films. Optical characterization of the optimized LSCO films reveals promising high transparency with ∼67% transmittance while room temperature resistivity values are 1.4 Ω·cm. It is suggested that the presence of structural defects, i.e., antiphase boundaries and misfit dislocations, affects the electrical behavior of LSCO films. Monochromated electron energy loss spectroscopy allowed changes in the electronic structure in LSCO films to be determined, revealing the creation of Cr4+ and unoccupied states at the O 2p upon Sr-doping. This work offers a new venue to prepare and further investigate cost-effective functional perovskite oxides with potential to be used as p-type transparent conducting electrodes and be easily integrated in many oxide heterostructures.

Significant Reduction of the Dead Layers by the Strain Release in La0.7Sr0.3MnO3 Heterostructures

Great efforts have been devoted to exploring the emergent phenomena occurring in heterostructures of correlated oxides. However, the presence of both magnetic and electrical dead layers in functional oxide films generally obstructs the device functionalization and miniaturization. Here, we demonstrate an effective strategy to significantly reduce the thickness of dead layers in a prototypical correlated oxide system, La_0.7Sr_0.3MnO₃ (LSMO) grown on LaAlO₃ (LAO) substrates, via strain engineering by inserting a Sr₃Al₂O₆ buffer layer with a different thickness at heterointerfaces. In this way, the thicknesses of the magnetic and electrical dead layers of LSMO films on the LAO substrates notably decrease from 8 to 4 unit cells and from 13 to 9 unit cells, respectively. Our results provide a convenient method to minimize or even eliminate the dead layers of correlated oxides through the interfacial strain engineering, which has potential applications in nanoscale oxide spintronic devices.

Electronic Properties of Fully Strained La1-x Sr x MnO3 Thin Films Grown by Molecular Beam Epitaxy (0.15 ≤ x ≤ 0.45)

The structural, electronic, and magnetic properties of Sr-hole-doped epitaxial La_1-x Sr _x MnO₃ (0.15 ≤ x ≤ 0.45) thin films deposited using the molecular beam epitaxy technique on 4° vicinal STO (001) substrates are probed by the combination of X-ray diffraction and various synchrotron-based spectroscopy techniques. The structural characterizations evidence a significant shift in the LSMO (002) peak to the higher diffraction angles owing to the increase in Sr doping concentrations in thin films. The nature of the LSMO Mn mixed-valence state was estimated from X-ray photoemission spectroscopy together with the relative changes in the Mn L_2,3 edges observed in X-ray absorption spectroscopy (XAS), both strongly affected by doping. CTM4XAS simulations at the XAS Mn L_2,3 edges reveal the combination of epitaxial strain, and different MnO₆ crystal field splitting give rise to a peak at ∼641 eV. The observed changes in the occupancy of the e_g and the t_2g orbitals as well as their binding energy positions toward the Fermi level with hole doping are discussed. The room-temperature magnetic properties were probed at the end by circular dichroism.

Evidence of Mn-Ion Structural Displacements Correlated with Oxygen Vacancies in La0.7Sr0.3MnO3 Interfacial Dead Layers

The properties of half-metallic manganite thin films depend on the composition and structure in the atomic scale, and consequently, their potential functional behavior can only be based on fine structure characterization. By combining advanced transmission electron microscopy, electron energy loss spectroscopy, density functional theory calculations, and multislice image simulations, we obtained evidence of a 7 nm-thick interface layer in La_0.7Sr_0.3MnO₃ (LSMO) thin films, compatible with the formation of well-known dead layers in manganites, with an elongated out-of-plane lattice parameter and structural and electronic properties well distinguished from the bulk of the film. We observed, for the first time, a structural shift of Mn ions coupled with oxygen vacancies and a reduced Mn valence state within such layer. Understanding the correlation between oxygen vacancies, the Mn oxidation state, and Mn-ion displacements is a prerequisite to engineer the magnetotransport properties of LSMO thin films.

Modulating Magnetism in Ferroelectric Polymer-Gated Perovskite Manganite Films with Moderate Gate Pulse Chains

Most previous attempts on achieving electric-field manipulation of ferromagnetism in complex oxides, such as La_0.66Sr_0.33MnO₃ (LSMO), are based on electrostatically induced charge carrier changes through high-k dielectrics or ferroelectrics. Here, the use of a ferroelectric copolymer, polyvinylidene fluoride with trifluoroethylene [P(VDF-TrFE)], as a gate dielectric to successfully modulate the ferromagnetism of the LSMO thin film in a field-effect device geometry is demonstrated. Specifically, through the application of low-voltage pulse chains inadequate to switch the electric dipoles of the copolymer, enhanced tunability of the oxide magnetic response is obtained, compared to that induced by ferroelectric polarization. Such observations have been attributed to electric field-induced oxygen vacancy accumulation/depletion in the LSMO layer upon the application of pulse chains, which is supported by surface-sensitive-characterization techniques, including X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. These techniques not only unveil the electrochemical nature of the mechanism but also establish a direct correlation between the oxygen vacancies created and subsequent changes to the valence states of Mn ions in LSMO. These demonstrations based on the pulsing strategy can be a viable route equally applicable to other functional oxides for the construction of electric field-controlled magnetic devices.

Movable holder for a quartz crystal microbalance for exact growth rates in pulsed laser deposition

Controlling the amount of material deposited by pulsed laser deposition (PLD) down to fractions of one atomic layer is crucial for nanoscale technologies based on thin-film heterostructures. Albeit unsurpassed for measuring growth rates with high accuracy, the quartz crystal microbalance (QCM) suffers from some limitations when applied to PLD. The strong directionality of the PLD plasma plume and its pronounced dependence on deposition parameters (e.g., background pressure and fluence) require that the QCM is placed at the same position as the substrate during growth. However, QCM sensors are commonly fixed off to one side of the substrate. This also entails fast degradation of the crystal, as it is constantly exposed to the ablated material. The design for a movable QCM holder discussed in this work overcomes these issues. The holder is compatible with standard transfer arms, enabling easy insertion and transfer between a PLD chamber and other adjoining vacuum chambers. The QCM can be placed at the same position as the substrate during PLD growth. Its resonance frequency is measured in vacuum at any location where it can be in contact with an electrical feedthrough, before and after deposition. We tested the design for the deposition of hematite (Fe₂O₃), comparing the rates derived from the QCM and from reflection high-energy electron diffraction oscillations during homoepitaxial growth.