Effect of Annealing on the Structural, Magnetic, Surface Energy and Optical Properties of Co32Fe30W38 Films Deposited by Direct-Current Magnetron Sputtering

Investigation of Sm Addition on Microstructural and Optical Properties of CoFe Thin Films

CoFe-based alloys and rare earth (RE) elements are among the most studied materials in applying magnetic devices to improve soft magnetic characteristics. A series of Co40Fe40Sm20 films are deposited on a glass substrate via the sputtering technique, followed by an annealing process to investigate their effect on microstructural and optical properties of Co40Fe40Sm20 films. In this study, the increase in the thickness of Co40Fe40Sm20 films and annealing temperatures resulted in a smoother surface morphology. The 40 nm Co40Fe40Sm20 films annealed 300 °C are expected to have good wear resistance and adhesive properties due to their high values of H/E ratio and surface energy. Optical transparency also increased due to the smoother surface of the Co40Fe40Sm20 films.

The Influence of Annealing and Film Thickness on the Specific Properties of Co40Fe40Y20 Films

Cobalt Iron Yttrium (CoFeY) magnetic film was made using the sputtering technique in order to investigate the connection between the thickness and annealing procedures. The sample was amorphous as a result of an insufficient thermal driving force according to X-ray diffraction (XRD) examination. The maximum low-frequency alternate-current magnetic susceptibility (χ_ac) values were raised in correlation with the increased thickness and annealing temperatures because the thickness effect and Y addition improved the spin exchange coupling. The best value for a 50 nm film at annealing 300 °C for χ_ac was 0.20. Because electron carriers are less constrained in their conduction at thick film thickness and higher annealing temperatures, the electric resistivity and sheet resistance are lower. At a thickness of 40 nm, the film's maximum surface energy during annealing at 300 °C was 28.7 mJ/mm². This study demonstrated the passage of photon signals through the film due to the thickness effect, which reduced transmittance. The best condition was found to be 50 nm with annealing at 300 °C in this investigation due to high χ_ac, strong adhesion, and low resistivity, which can be used in magnetic fields.

Effect of Annealing and Thickness of Co40Fe40Yb20 Thin Films on Various Physical Properties on a Glass Substrate

The aim of this work is to investigate the effect of annealing and thickness on various physical properties in Co₄₀Fe₄₀Yb₂₀ thin films. X-ray diffraction (XRD) was used to determine the amorphous structure of Co₄₀Fe₄₀Yb₂₀ films. The maximum surface energy of 40 nm thin films at 300 °C is 34.54 mJ/mm². The transmittance and resistivity decreased significantly as annealing temperatures and thickness increased. At all conditions, the 10 nm film had the highest hardness. The average hardness decreased as thickness increased, as predicted by the Hall-Petch effect. The highest low-frequency alternative-current magnetic susceptibility (χ_ac) value was discovered when the film was annealed at 200 °C with 50 nm, and the optimal resonance frequency (ƒ_res) was in the low frequency range, indicating that the film has good applicability in the low frequency range. At annealed 200 °C and 50 nm, the maximum saturation magnetization (Ms) was discovered. Thermal disturbance caused the Ms to decrease when the temperature was raised to 300 °C. The optimum process conditions determined in this study are 200 °C and 50 nm, with the highest Ms, χ_ac, strong adhesion, and low resistivity, which are suitable for magnetic applications, based on magnetic properties and surface energy.

Annealing Effect on the Contact Angle, Surface Energy, Electric Property, and Nanomechanical Characteristics of Co40Fe40W20 Thin Films

This study investigated Co40Fe40W20 single-layer thin films according to their corresponding structure, grain size, contact angle, and surface energy characteristics. Co40Fe40W20 alloy thin films of different thicknesses, ranging from 10 to 50 nm, were sputtered on Si(100) substrates by DC magnetron sputtering. The thin films were annealed under three conditions: as-deposited, 250 °C, and 350 °C temperatures, respectively. The Scherrer equation was applied to calculate the grain size of Co40Fe40W20 thin films. The results show that the grain size of CoFe(110) increased simultaneously with the increase of post-annealing temperature, suggesting that the crystallinity of Co40Fe40W20 thin films increased with the post-annealing temperature. Moreover, the contact angles of all Co40Fe40W20 thin films were all less than 90°, suggesting that Co40Fe40W20 thin films show changes in the direction of higher hydrophilicity. However, we found that their contact angles decreased as the grain size of CoFe increased. Finally, the Young equation was applied to calculate the surface energy of Co40Fe40W20 thin films. After post-annealing, the surface energy of Co40Fe40W20 thin films increased with the rising post-annealing temperature. This is the highest value of surface energy observed for 350 °C. In addition, the surface energy increased as the contact angle of Co40Fe40W20 thin films decreased. The high surface energy means stronger adhesion, allowing the formation of multilayer thin films with magnetic tunneling junctions (MTJs). The sheet resistance of the as-deposited and thinner CoFeW films is larger than annealed and thicker CoFeW films. When the thickness is from 10 nm to 50 nm, the hardness and Young’s modulus of the CoFeW film also show a saturation trend.

Impact of Annealing on Magnetic Properties and Structure of Co40Fe40W20 Thin Films on Si(100) Substrate

Co₄₀Fe₄₀W₂₀ monolayers of different thicknesses were deposited on Si(100) substrates by DC magnetron sputtering, with Co₄₀Fe₄₀W₂₀ thicknesses from 10 to 50 nm. Co₄₀Fe₄₀W₂₀ thin films were annealed at three conditions (as-deposited, 250 °C, and 350 °C) for 1 h. The structural and magnetic properties were then examined by X-ray diffraction (XRD), low-frequency alternative-current magnetic susceptibility (χ_ac), and an alternating-gradient magnetometer (AGM). The XRD results showed that the CoFe (110) peak was located at 2θ = 44.6°, but the metal oxide peaks appeared at 2θ = 38.3, 47.6, 54.5, and 56.3°, corresponding to Fe₂O₃ (320), WO₃ (002), Co₂O₃ (422), and Co₂O₃ (511), respectively. The saturation magnetization (Ms) was calculated from the slope of the magnetization (M) versus the CoFeW thickness. The Ms values calculated in this manner were 648, 876, 874, and 801 emu/cm³ at the as-deposited condition and post-annealing conditions at 250, 350, and 400 °C, respectively. The maximum M_S was about 874 emu/cm³ at a thickness of 50 nm following annealing at 350 °C. It indicated that the M_S and the χ_ac values rose as the CoFeW thin films’ thickness increased. Owing to the thermal disturbance, the M_S and χ_ac values of CoFeW thin films after annealing at 350 °C were comparatively higher than at other annealing temperatures. More importantly, the Co₄₀Fe₄₀W₂₀ films exhibited a good thermal stability. Therefore, replacing the magnetic layer with a CoFeW film improves thermal stability and is beneficial for electrode and strain gauge applications.