Omnipresence of Weak Antilocalization (WAL) in Bi2Se3 Thin Films: A Review on Its Origin

Localization and Directionality of Surface Transport in Bi2Te3 Ordered 3D Nanonetworks

The resistance of an ordered 3D-Bi2Te3 nanowire nanonetwork was studied at low temperatures. Below 50 K the increase in resistance was found to be compatible with the Anderson model for localization, considering that conduction takes place in individual parallel channels across the whole sample. Angle-dependent magnetoresistance measurements showed a distinctive weak antilocalization characteristic with a double feature that we could associate with transport along two perpendicular directions, dictated by the spatial arrangement of the nanowires. The coherence length obtained from the Hikami-Larkin-Nagaoka model was about 700 nm across transversal nanowires, which corresponded to approximately 10 nanowire junctions. Along the individual nanowires, the coherence length was greatly reduced to about 100 nm. The observed localization effects could be the reason for the enhancement of the Seebeck coefficient observed in the 3D-Bi2Te3 nanowire nanonetwork compared to individual nanowires.

Ion-Induced Lateral Damage in the Focused Ion Beam Patterning of Topological Insulator Bi2Se3 Thin Films

Focused Ion Beam patterning has become a widely applied technique in the last few decades in the micro- and nanofabrication of quantum materials, representing an important advantage in terms of resolution and versatility. However, ion irradiation can trigger undesired effects on the target material, most of them related to the damage created by the impinging ions that can severely affect the crystallinity of the sample, compromising the application of Focused Ion Beam to the fabrication of micro- and nanosized systems. We focus here on the case of Bi₂Se₃, a topological material whose unique properties rely on its crystallinity. In order to study the effects of ion irradiation on the structure of Bi₂Se₃, we irradiated with Ga⁺ ions the full width of Hall-bar devices made from thin films of this material, with the purpose of inducing changes in the electrical resistance and characterizing the damage created during the process. The results indicate that a relatively high ion dose is necessary to introduce significant changes in the conduction. This ion dose creates medium-range lateral damage in the structure, manifested through the formation of an amorphous region that can extend laterally up to few hundreds of nanometers beyond the irradiated area. This amorphous material is no longer expected to behave as intrinsic Bi₂Se₃, indicating a spatial limitation for the devices fabricated through this technique.

Dual pulsed laser deposition system for the growth of complex materials and heterostructures

Here, we present an integrated ultra-high-vacuum (UHV) apparatus for the growth of complex materials and heterostructures. The specific growth technique is the Pulsed Laser Deposition (PLD) by means of a dual-laser source based on an excimer KrF ultraviolet and solid-state Nd:YAG infra-red lasers. By taking advantage of the two laser sources-both lasers can be independently used within the deposition chambers-a large number of different materials-ranging from oxides to metals, to selenides, and others-can be successfully grown in the form of thin films and heterostructures. All of the samples can be in situ transferred between the deposition chambers and the analysis chambers by using vessels and holders' manipulators. The apparatus also offers the possibility to transfer samples to remote instrumentation under UHV conditions by means of commercially available UHV-suitcases. The dual-PLD operates for in-house research as well as user facility in combination with the Advanced Photo-electric Effect beamline at the Elettra synchrotron radiation facility in Trieste and allows synchrotron-based photo-emission as well as x-ray absorption experiments on pristine films and heterostructures.

Advances in Topological Materials: Fundamentals, Challenges and Outlook

The discovery of topological insulators, characterized by an energy gap in bulk electronic band structures and metallic states on boundaries, has greatly inspired studies on the topological properties of the electronic band structures of crystalline materials [...].

Magnetotransport and ARPES studies of the topological insulators Sb2Te3 and Bi2Te3 grown by MOCVD on large-area Si substrates

Recently, the topological insulators (TIs) antimony telluride (Sb₂Te₃) and bismuth telluride (Bi₂Te₃) are attracting high interest for applications based on spin-charge interconversion mechanisms. Aiming to make a step toward the technology transfer, it is of major importance to achieve and investigate epitaxial quality-TIs on large area Si-based substrates. In view of that, we report here magnetotransport and angle-resolved photoemission spectroscopy (ARPES) studies on Sb₂Te₃ and Bi₂Te₃ thin films grown by metal organic chemical vapor deposition (MOCVD) on top of 4″ Si(111) substrates. Clear weak antilocalization (WAL) effects are observed in both TIs, proving the existence of quantum transport mechanism, and the data are successfully interpreted in the framework of the Hikami-Larkin-Nagaoka model. Further, by dedicated magnetotransport experiments, it has been confirmed that the investigated WAL originates from two-dimensional (2D) topological states. ARPES has been performed ex-situ, and in both TIs the gapless Dirac cones have been observed and attributed to the topological surface states. Combining the proofs of the existence of quantum 2D transport as deduced from the analysis of the magnetoconductance curve with the direct observation of the Dirac-like band structure revealed by the ARPES spectra, it is possible to unambiguously confirm the topological nature of our Sb₂Te₃ and Bi₂Te₃ thin films. The results obtained on thin films grown by MOCVD on 4'' Si(111) substrate mark an important step towards the technology transfer of the topological insulators studied in this work.

Improving Biosensors by the Use of Different Nanomaterials: Case Study with Microcystins as Target Analytes

The eutrophication of lakes and rivers without adequate rainfall leads to excessive growth of cyanobacterial harmful algal blooms (CyanoHABs) that produce toxicants, green tides, and unpleasant odors. The rapid growth of CyanoHABs owing to global warming, climate change, and the development of rainforests and dams without considering the environmental concern towards lakes and rivers is a serious issue. Humans and livestock consuming the toxicant-contaminated water that originated from CyanoHABs suffer severe health problems. Among the various toxicants produced by CyanoHABs, microcystins (MCs) are the most harmful. Excess accumulation of MC within living organisms can result in liver failure and hepatocirrhosis, eventually leading to death. Therefore, it is essential to precisely detect MCs in water samples. To date, the liquid chromatography-mass spectrometry (LC-MS) and enzyme-linked immunosorbent assay (ELISA) have been the standard methods for the detection of MC and provide precise results with high reliability. However, these methods require heavy instruments and complicated operation steps that could hamper the portability and field-readiness of the detection system. Therefore, in order for this goal to be achieved, the biosensor has been attracted to a powerful alternative for MC detection. Thus far, several types of MC biosensor have been proposed to detect MC in freshwater sample. The introduction of material is a useful option in order to improve the biosensor performance and construct new types of biosensors. Introducing nanomaterials to the biosensor interface provides new phenomena or enhances the sensitivity. In recent times, different types of nanomaterials, such as metallic, carbon-based, and transition metal dichalcogenide-based nanomaterials, have been developed and used to fabricate biosensors for MC detection. This study reviews the recent advancements in different nanomaterial-based MC biosensors.