Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V-S Process

Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators

Amorphous indium tin zinc oxide (a-ITZO)/Bi2Se3 nanoplatelets (NPs) were fabricated using a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor deposition at 600 °C on a glass substrate, and then a-ITZO was deposited on the surface of the Bi2Se3 NPs via magnetron sputtering at room-temperature. The crystal structures of the a-ITZO/Bi2Se3 NPs were determined via X-ray diffraction spectroscopy and high-resolution transmission electron microscopy. The elemental vibration modes and binding energies were measured using Raman spectroscopy and X-ray photoelectron spectroscopy. The morphologies were examined using field-emission scanning electron microscopy. The electrical properties of the a-ITZO/Bi2Se3 NPs were evaluated using Hall effect measurements. The bulk carrier concentration of a-ITZO was not affected by the heterostructure with Bi2Se3. In the case of the Bi2Se3 heterostructure, the carrier mobility and conductivity of a-ITZO were increased by 263.6% and 281.4%, respectively, whereas the resistivity of a-ITZO was reduced by 73.57%. This indicates that Bi2Se3 significantly improves the electrical properties of a-ITZO through its heterostructure, expanding its potential applications in electronic and thermoelectric devices.

Structural, Optical, Electrical, and Thermoelectric Properties of Bi2Se3 Films Deposited at a High Se/Bi Flow Rate

Low-temperature synthesis of Bi2Se3 thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi2Se3 film demonstrated excellent crystallinity due to the Se-rich environment. Experimental results show that the prepared Bi2Se3 film exhibited 90% higher transparency in the mid-IR region, demonstrating its potential as a functional material in the atmospheric window. Excellent mobility of 2094 cm2/V·s at room temperature is attributed to the n-type conductive properties of the film. Thermoelectrical properties indicate that with the increase in Se vapor, a slight decrease in conductivity of the film is observed at room temperature with an obvious increase in the Seebeck coefficient. In addition, Bi2Se3 thin film showed an enhanced power factor of as high as 3.41 μW/cmK2. Therefore, plasma-enhanced chemical vapor deposition (PECVD)-grown Bi2Se3 films on Al2O3 (001) substrates demonstrated promising thermoelectric properties.

Broadband Optical Properties of Bi2Se3

Materials with high optical constants are of paramount importance for efficient light manipulation in nanophotonics applications. Recent advances in materials science have revealed that van der Waals (vdW) materials have large optical responses owing to strong in-plane covalent bonding and weak out-of-plane vdW interactions. However, the optical constants of vdW materials depend on numerous factors, e.g., synthesis and transfer method. Here, we demonstrate that in a broad spectral range (290-3300 nm) the refractive index n and the extinction coefficient k of Bi₂Se₃ are almost independent of synthesis technology, with only a ~10% difference in n and k between synthesis approaches, unlike other vdW materials, such as MoS₂, which has a ~60% difference between synthesis approaches. As a practical demonstration, we showed, using the examples of biosensors and therapeutic nanoparticles, that this slight difference in optical constants results in reproducible efficiency in Bi₂Se₃-based photonic devices.

Fabrication, characterization and optical properties of Au-decorated Bi2Se3 nanoplatelets

Au-decorated Bi₂Se₃ nanoplatelet heterostructures are fabricated by a two-step process of thermal CVD at 600 °C and magnetron sputtering at room-temperature. The crystal structures and binding energies of rhombohedral Bi₂Se₃ and FCC Au are determined by XRD, HRTEM, XPS, and Raman spectroscopy. XPS and Raman spectroscopy reveal the interaction between Au and Bi₂Se₃ by shifting in the binding energies of Au-Au, Au-Se and Bi-Se bonds and the wavenumber of A_1g² and E_g² modes. Au-decorated Bi₂Se₃ nanoplatelet heterostructures are observed using FESEM, and confirmed by XPS, Raman spectroscopy, and HRTEM imaging. Their optical band gap of the Au-decorated Bi₂Se₃ nanoplatelet heterostructures increases with Au thickness about 1.92-fold as much as that of pristine Bi₂Se₃ (0.39 eV), owing to the Burstein-Moss effect. The optical absorptance of the Au-decorated Bi₂Se₃ nanoplatelet heterostructures revealed increment with wavelength from 200 to 500 nm and decrement with increasing wavelength from 500 to 800 nm.

Controlled Synthesis and Photoelectrochemical Performance Enhancement of Cu2−xSe Decorated Porous Au/Bi2Se3 Z-Scheme Plasmonic Photoelectrocatalyst

In this paper, uniform Cu2−xSe-modified Au/Bi2Se3 hybrid nanoparticles with porous shells have been prepared through a cation exchange method. Bi2Se3/Cu2−xSe Z-scheme heterojunction is introduced onto Au nanocube by replacing Bi3+ with Cu2+. Owing to the effective coupling between Au core and semiconductor shells, Au/Bi2Se3/Cu2−xSe hybrids present a broad and strong plasmon resonance absorption in the visible band. More intriguingly, the carrier lifetime of Au/Bi2Se3/Cu2−xSe hybrid photoelectrodes can be further tailored with corresponding Cu2−xSe content. Through parameter optimization, 0.1-Au/Bi2Se3/Cu2−xSe electrode exhibits the longest electron lifetime (86.03 ms) among all the parallel samples, and corresponding photoelectrochemical performance enhancement is also observed in the tests. Compared with that of pure Bi2Se3 (0.016% at 0.90 V vs. RHE) and Au/Bi2Se3 (0.02% at 0.90 V vs. RHE) nanoparticles, the maximum photoconversion efficiency of porous Au/Bi2Se3/Cu2−xSe hybrid photoanodes increased by 5.87 and 4.50 times under simulated sunlight illumination, attributing to the cooperation of Z-scheme heterojunction and plasmon resonance enhancement effects. All the results indicate that Au/Bi2Se3/Cu2−xSe porous hybrids combine eco-friendliness with excellent sunlight harvesting capability and effectively inhibiting the charge recombination, which provide a new idea for efficient solar-driven water splitting.

Enhanced Photocurrent of the Ag Interfaced Topological Insulator Bi2Se3 under UV- and Visible-Light Radiations

Bi₂Se₃ is a topological quantum material that is used in photodetectors, owing to its narrow bandgap, conductive surface, and insulating bulk. In this work, Ag@Bi₂Se₃ nanoplatelets were synthesized on Al₂O₃(100) substrates in a two-step process of thermal evaporation and magnetron sputtering. X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) revealed that all samples had the typical rhombohedral Bi₂Se₃. Field-emission scanning electron microscopy (FESEM)-energy dispersive x-ray spectroscopy (EDS), XPS, and HRTEM confirmed the presence of the precipitated Ag. The optical absorptance of Bi₂Se₃ nanoplatelets in UV-visible range decreased with the Ag contents. Results of photocurrent measurements under zero-bias conditions revealed that the deposited Ag affected photosensitivity. A total of 7.1 at.% Ag was associated with approximately 4.25 and 4.57 times higher photocurrents under UV and visible light, respectively, than 0 at.% Ag. The photocurrent in Bi₂Se₃ at 7.1 at.% Ag under visible light was 1.72-folds of that under UV light. This enhanced photocurrent is attributable to the narrow bandgap (~0.35 eV) of Bi₂Se₃ nanoplatelets, the Schottky field at the interface between Ag and Bi₂Se₃, the surface plasmon resonance that is caused by Ag, and the highly conductive surface that is formed from Ag and Bi₂Se₃. This work suggests that the appropriate Ag deposition enhances the photocurrent in, and increases the photosensitivity of, Bi₂Se₃ nanoplatelets under UV and visible light.