Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices

Highly Sensitive and Fast Responding Flexible Force Sensors Using ZnO/ZnMgO Coaxial Nanotubes on Graphene Layers for Breath Sensing

The authors report the fabrication of highly sensitive, rapidly responding flexible force sensors using ZnO/ZnMgO coaxial nanotubes grown on graphene layers and their applications in sleep apnea monitoring. Flexible force sensors are fabricated by forming Schottky contacts to the nanotube array, followed by the mechanical release of the entire structure from the host substrate. The electrical characteristics of ZnO and ZnO/ZnMgO nanotube-based sensors are thoroughly investigated and compared. Importantly, in force sensor applications, the ZnO/ZnMgO coaxial structure results in significantly higher sensitivity and a faster response time when compared to the bare ZnO nanotube. The origin of the improved performance is thoroughly discussed. Furthermore, wireless breath sensing is demonstrated using the ZnO/ZnMgO pressure sensors with custom electronics, demonstrating the feasibility of the sensor technology for health monitoring and the potential diagnosis of sleep apnea.

Theoretical Analysis of Piezoelectric Semiconductor Thick Plates with Periodic Boundary Conditions

Piezoelectric semiconductors, being materials with both piezoelectric and semiconducting properties, are of particular interest for use in multi-functional devices and naturally result in multi-physics analysis. This study provides analytical solutions for thick piezoelectric semiconductor plates with periodic boundary conditions and includes an investigation of electromechanical coupling effects. Using the linearization of the drift-diffusion equations for both electrons and holes for small carrier concentration perturbations, the governing equations are solved by the extended Stroh formalism, which is a method for solving the eigenvalues and eigenvectors of a problem. The solution, obtained in the form of a series expansion with an unknown coefficient, is solved by matching Fourier series expansions of the boundary conditions. The distributions of electromechanical fields and the concentrations of electrons and holes under four-point bending and three-point bending loads are calculated theoretically. The effects of changing the period length and steady-state carrier concentrations are covered in the discussion, which also reflects the extent of coupling in multi-physics interactions. The results provide a theoretical method for understanding and designing with piezoelectric semiconductor materials.

Analysis and Optimization of Dynamic and Static Characteristics of the Compliant-Amplifying Mechanisms

Compliant amplifying mechanisms are used widely in high-precision instruments driven by piezoelectric actuators, and the dynamic and static characteristics of these mechanisms are closely related to instrument performance. Although the majority of existing research has focused on analysis of their static characteristics, the dynamic characteristics of the mechanisms affect their response speeds directly. Therefore, this paper proposes a comprehensive theoretical model of compliant-amplifying mechanisms based on the multi-body system transfer matrix method to analyze the dynamic and static characteristics of these mechanisms. The effects of the main amplifying mechanism parameters on the displacement amplification ratio and the resonance frequency are analyzed comprehensively using the control variable method. An iterative optimization algorithm is also used to obtain specific parameters that meet the design requirements. Finally, simulation analyses and experimental verification tests are performed. The results indicate the feasibility of using the proposed theoretical compliant-amplifying mechanism model to describe the mechanism's dynamic and static characteristics, which represents a significant contribution to the design and optimization of compliant-amplifying mechanisms.

The Piezoresponse in WO3 Thin Films Due to N2-Filled Nanovoids Enrichment by Atom Probe Tomography

Tungsten trioxide (WO₃) is a versatile n-type semiconductor with outstanding chromogenic properties highly used to fabricate sensors and electrochromic devices. We present a comprehensive experimental study related to piezoresponse with piezoelectric coefficient d₃₃ = 35 pmV^-1 on WO₃ thin films ~200 nm deposited using RF-sputtering onto alumina (Al₂O₃) substrate with post-deposit annealing treatment of 400 °C in a 3% H₂/N₂-forming gas environment. X-ray diffraction (XRD) confirms a mixture of orthorhombic and tetragonal phases of WO₃ with domains with different polarization orientations and hysteresis behavior as observed by piezoresponse force microscopy (PFM). Furthermore, using atom probe tomography (APT), the microstructure reveals the formation of N₂-filled nanovoids that acts as strain centers producing a local deformation of the WO₃ lattice into a non-centrosymmetric structure, which is related to piezoresponse observations.

Progress in ZnO Nanosensors

Developing various nanosensors with superior performance for accurate and sensitive detection of some physical signals is essential for advances in electronic systems. Zinc oxide (ZnO) is a unique semiconductor material with wide bandgap (3.37 eV) and high exciton binding energy (60 meV) at room temperature. ZnO nanostructures have been investigated extensively for possible use as high-performance sensors, due to their excellent optical, piezoelectric and electrochemical properties, as well as the large surface area. In this review, we primarily introduce the morphology and major synthetic methods of ZnO nanomaterials, with a brief discussion of the advantages and weaknesses of each method. Then, we mainly focus on the recent progress in ZnO nanosensors according to the functional classification, including pressure sensor, gas sensor, photoelectric sensor, biosensor and temperature sensor. We provide a comprehensive analysis of the research status and constraints for the development of ZnO nanosensor in each category. Finally, the challenges and future research directions of nanosensors based on ZnO are prospected and summarized. It is of profound significance to research ZnO nanosensors in depth, which will promote the development of artificial intelligence, medical and health, as well as industrial, production.

An Analytical Model for Dual Gate Piezoelectrically Sensitive ZnO Thin Film Transistors

We report the experimental realization of piezoelectric ZnO dual-gate thin film transistors (TFTs) as highly sensitive force sensors and discuss the physical origins of its electrically tunable piezoelectric response using a simple analytical model. A dual gate TFT is fabricated on a polyimide substrate using radio-frequency (RF) magnetron sputtering of piezoelectric ZnO thin film as a channel. The ZnO TFTs exhibited a field effect mobility of ~ 5 cm2/Vs, I max to I min ratio of 107, and a subthreshold slope of 700 mV/dec. Notably, the TFT exhibited static and transient current changes under external force stimuli, with varying amplitude and polarity for different gate bias regimes. To understand the current modulation of the dual-gate TFT with independently biased top and bottom gates, an analytical model is developed. The model includes accumulation channels at both surfaces and a bulk channel within the film and accounts for the force-induced piezoelectric charge density. The microscopic piezoelectric response that modulates the energy-band edges and correspondent current-voltage characteristics are accurately portrayed by our model. Finally, the field-tunable force response in single TFT is demonstrated as a function of independent bias for the top and bottom gates with a force response range from -0.29 nA/mN to 22.7 nA/mN. This work utilizes intuitive analytical models to shed light on the correlation between the material properties with the force response in piezoelectric TFTs.

A Dynamic Hysteresis Model and Nonlinear Control System for a Structure-Integrated Piezoelectric Sensor-Actuator

The piezoelectric sensor-actuator plays an important role in micro high-precision dynamic systems such as medical robots and micro grippers. These mechanisms need high-precision position control, while the size of the sensor and actuator should be as small as possible. For this paper, we designed and manufactured a structure-integrated piezoelectric sensor-actuator and proposed its PID (Proportion Integral Differential) control system based on the dynamic hysteresis nonlinear model and the inverse model. Through simplifying the structure of the piezoelectric sensor-actuator by the centralized parameter method, this paper establishes its dynamic model and explores the input-output transfer function by taking the relationship between the output force and displacement as the medium. The experiment shows the maximum distance of the hysteresis curve is 0.26 μm. By parsing the hysteresis curve, this paper presents a dynamic hysteresis nonlinear model and its inverse model based on a 0.5 Hz quasi-static model and linear transfer function. Simulation results show that the accuracy of the static model is higher than that of the dynamic model when the frequency is 0.5 Hz, but the compensation accuracy of the dynamic model is obviously better than that of the static model with the increase of the frequency. This paper also proposes a control system for the sensor-actuator by means of the inverse model. The simulation results indicate that the output root mean square error was reduced to one-quarter of the original, which proves that the structure-integrated piezoelectric sensor-actuator and its control system have a great significance for signal sensing and output control of micro high-precision dynamic systems.