Room-Temperature Silicon Platform for GHz-Frequency Nanoelectro-Opto-Mechanical Systems

Nanoelectro-opto-mechanical systems enable the synergistic coexistence of electrical, mechanical, and optical signals on a chip to realize new functions. Most of the technology platforms proposed for the fabrication of these systems so far are not fully compatible with the mainstream CMOS technology, thus, hindering the mass-scale utilization. We have developed a CMOS technology platform for nanoelectro-opto-mechanical systems that includes piezoelectric interdigitated transducers for electronic driving of mechanical signals and nanocrystalline silicon nanobeams for an enhanced optomechanical interaction. Room-temperature operation of devices at 2 GHz and with peak sensitivity down to 2.6 cavity phonons is demonstrated. Our proof-of-principle technology platform can be integrated and interfaced with silicon photonics, electronics, and MEMS devices and may enable multiple functions for coherent signal processing in the classical and quantum domains.

Optomechanical crystals for spatial sensing of submicron sized particles

Optomechanical crystal cavities (OMC) have rich perspectives for detecting and indirectly analysing biological particles, such as proteins, bacteria and viruses. In this work we demonstrate the working principle of OMCs operating under ambient conditions as a sensor of submicrometer particles by optically monitoring the frequency shift of thermally activated mechanical modes. The resonator has been specifically designed so that the cavity region supports a particular family of low modal-volume mechanical modes, commonly known as -pinch modes-. These involve the oscillation of only a couple of adjacent cavity cells that are relatively insensitive to perturbations in other parts of the resonator. The eigenfrequency of these modes decreases as the deformation is localized closer to the centre of the resonator. Thus, by identifying specific modes that undergo a frequency shift that amply exceeds the mechanical linewidth, it is possible to infer if there are particles deposited on the resonator, how many are there and their approximate position within the cavity region. OMCs have rich perspectives for detecting and indirectly analysing biological particles, such as proteins, viruses and bacteria.

Ferromagnetic Resonance Assisted Optomechanical Magnetometer

The resonant enhancement of mechanical and optical interaction in optomechanical cavities enables their use as extremely sensitive displacement and force detectors. In this Letter, we demonstrate a hybrid magnetometer that exploits the coupling between the resonant excitation of spin waves in a ferromagnetic insulator and the resonant excitation of the breathing mechanical modes of a glass microsphere deposited on top. The interaction is mediated by magnetostriction in the ferromagnetic material and the consequent mechanical driving of the microsphere. The magnetometer response thus relies on the spectral overlap between the ferromagnetic resonance and the mechanical modes of the sphere, leading to a peak sensitivity of 850  pT Hz^{-1/2} at 206 MHz when the overlap is maximized. By externally tuning the ferromagnetic resonance frequency with a static magnetic field, we demonstrate sensitivity values at resonance around a few nT Hz^{-1/2} up to the gigahertz range. Our results show that our hybrid system can be used to build a high-speed sensor of oscillating magnetic fields.

Optomechanical microwave oscillator and frequency comb generation in a full phononic bandgap 1D optomechanical crystal cavity

In this work we show that a silicon optomechanical crystal cavity can be used as an optomechanical oscillator when driven to the phonon lasing condition with a blue-detuned laser. The optomechanical cavity is designed to have a breathing like mode vibrating at Ωm/2π =3.897 GHz in a full phononic bandgap. Our measurements show that the first harmonic displays a phase noise of -100 dBc/Hz at 100 kHz. Stronger bluedetuned driving leads eventually to the formation of an optomechanical frequency comb, with lines spaced by the mechanical frequency. The measured phase noise grows up with the harmonic number, as in classical harmonic mixing. We present real-time measurements of the comb waveform and show that it can be adjusted to a theoretical model recently presented. Our results suggest that silicon optomechanical cavities can play a role in integrated microwave photonics.

Synchronization of Optomechanical Nanobeams by Mechanical Interaction

The synchronization of coupled oscillators is a phenomenon found throughout nature. Mechanical oscillators are paradigmatic examples, but synchronizing their nanoscaled versions is challenging. We report synchronization of the mechanical dynamics of a pair of optomechanical crystal cavities that, in contrast to previous works performed in similar objects, are intercoupled with a mechanical link and support independent optical modes. In this regime they oscillate in antiphase, which is in agreement with the predictions of our numerical model that considers reactive coupling. We also show how to temporarily disable synchronization of the coupled system by actuating one of the cavities with a heating laser, so that both cavities oscillate independently. Our results can be upscaled to more than two cavities and pave the way towards realizing integrated networks of synchronized mechanical oscillators.

Nanocrystalline silicon optomechanical cavities

Silicon on insulator photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, there are some constraints such as the high cost of the wafers and limitation to a single physical device level. In the present work we investigate nanocrystalline silicon as an alternative material for optomechanical devices. In particular, we demonstrate that optomechanical crystal cavities fabricated of nanocrystalline silicon have optical and mechanical properties enabling non-linear dynamical behaviour and effects such as thermo-optic/free-carrier-dispersion self-pulsing, phonon lasing and chaos, all at low input laser power and with typical frequencies as high as 0.3 GHz.

Record Low Thermal Conductivity of Polycrystalline MoS2 Films: Tuning the Thermal Conductivity by Grain Orientation

We report a record low thermal conductivity in polycrystalline MoS₂ obtained for ultrathin films with varying grain sizes and orientations. By optimizing the sulfurization parameters of nanometer-thick Mo layers, five MoS₂ films containing a combination of horizontally and vertically oriented grains, with respect to the bulk (001) monocrystal, were grown. From transmission electron microscopy, the average grain size, typically below 10 nm, and proportion of differently oriented grains were extracted. The thermal conductivity of the suspended samples was extracted from a Raman laser-power-dependent study, and the lowest value of thermal conductivity of 0.27 W m^-1 K^-1, which reaches a similar value as that of Teflon, is obtained in a polycrystalline sample formed by a combination of horizontally and vertically oriented grains in similar proportion. Analysis by means of molecular dynamics and finite element method simulations confirm that such a grain arrangement leads to lower grain boundary conductance. We discuss the possible use of these thermal insulating films in the context of electronics and thermoelectricity.

Thermal noise and optomechanical features in the emission of a membrane-coupled compound cavity laser diode

We demonstrate the use of a compound optical cavity as linear displacement detector, by measuring the thermal motion of a silicon nitride suspended membrane acting as the external mirror of a near-infrared Littrow laser diode. Fluctuations in the laser optical power induced by the membrane vibrations are collected by a photodiode integrated within the laser, and then measured with a spectrum analyzer. The dynamics of the membrane driven by a piezoelectric actuator is investigated as a function of air pressure and actuator displacement in a homodyne configuration. The high Q-factor (~3.4 · 10(4) at 8.3 · 10(-3) mbar) of the fundamental mechanical mode at ~73 kHz guarantees a detection sensitivity high enough for direct measurement of thermal motion at room temperature (~87 pm RMS). The compound cavity system here introduced can be employed as a table-top, cost-effective linear displacement detector for cavity optomechanics. Furthermore, thanks to the strong optical nonlinearities of the laser compound cavity, these systems open new perspectives in the study of non-Markovian quantum properties at the mesoscale.

A self-stabilized coherent phonon source driven by optical forces

We report a novel injection scheme that allows for “phonon lasing” in a one-dimensional opto-mechanical photonic crystal, in a sideband unresolved regime and with cooperativity values as low as 10⁻². It extracts energy from a cw infrared laser source and is based on the triggering of a thermo-optical/free-carrier-dispersion self-pulsing limit-cycle, which anharmonically modulates the radiation pressure force. The large amplitude of the coherent mechanical motion acts as a feedback that stabilizes and entrains the self-pulsing oscillations to simple fractions of the mechanical frequency. A manifold of frequency-entrained regions with two different mechanical modes (at 54 and 122 MHz) are observed as a result of the wide tuneability of the natural frequency of the self-pulsing. The system operates at ambient conditions of pressure and temperature in a silicon platform, which enables its exploitation in sensing, intra-chip metrology or time-keeping applications.

Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip

An integrated erbium-based light emitting diode has been realized in a waveguide configuration allowing 1.54 μm light signal routing in silicon photonic circuits. This injection device is based on an asymmetric horizontal slot waveguide where the active slot material is Er(3+) in SiO2 or Er(3+) in Si-rich oxide. The active horizontal slot waveguide allows optical confinement, guiding and lateral extraction of the light for on-chip distribution. Light is then coupled through a taper section to a passive Si waveguide terminated by a grating which extracts (or inserts) the light signal for measuring purposes. We measured an optical power density in the range of tens of μW/cm(2) which follows a super-linear dependence on injected current density. When the device is biased at high current density, upon a voltage pulse (pump signal), free-carrier and space charge absorption losses become large, attenuating a probe signal by more than 60 dB/cm and thus behaving conceptually as an electro-optical modulator. The integrated device reported here is the first example, still to be optimized, of a fundamental block to realize an integrated silicon photonic circuit with monolithic integration of the light emitter.

Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides

Electrically driven Er(3+) doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er(3+) doped active layers were fabricated in the slot region: a pure SiO(2) and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er(3+) ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators.

Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation

The electroluminescence (EL) at 1.54 μm of metal–oxide–semiconductor (MOS) devices withEr3C ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er3C emission under an alternate pulsed voltage signal (APV). Energy transfer from silicon nanoclusters (Si-ncs) to Er3C is clearly observed at low-field APV excitation. We demonstrate that sequential electron and hole injection at the edges of the pulses creates excited states in Si-ncs which upon recombination transfer their energy to Er3C ions. On the contrary, direct impact excitation of Er3C by hot injected carriers starts at the Fowler–Nordheim injection threshold (above 5 MV cm(-1)) and dominates for high-field APV excitation.

High Q light-emitting Si-rich Si₃N₄ microdisks

We report on the optical properties of active silicon (Si)-rich Si₃N₄ microdisk cavities in the visible range. We have studied the correlation between the quality (Q) factor of the cavities and the active material deposition parameters. Microphotoluminescence measurements revealed subangstrom whispering galley modes resonances and a maximum Q of 10⁴ around 760 nm. These values improve significantly the best results reported so far for Si-based light-emitting circular resonators in the visible range. In contrast to what is reported for Si-rich SiO₂-based microcavities, we demonstrate the absence of a spectral widening at high pump fluxes associated to carrier absorption mechanisms, which allows high emitted power without degrading the Q of the cavity. These results open the route toward the monolithic integration of those structures into more complex circuits including Si photodetectors.

Whispering-gallery modes in glass microspheres: optimization of pumping in a modified confocal microscope

Whispering-gallery modes (WGMs) on Nd3+-doped glass microspheres with a radius of ∼15 μm were measured in a modified confocal microscope, where a dual spatial resolution in both excitation and detection zones was possible. As an alternative to the standard excitation mechanism by an evanescent wave, we used an efficient pumping/detecting scheme, focusing a laser in the microsphere and exciting the Nd3+ ions, whose fluorescent emission produces the WGMs. We have also measured the generated WGMs by changing the detection zone, where higher amplitude resonances were found when exciting in the center and detecting at the edge of the microsphere.

Probing the spontaneous emission dynamics in Si-nanocrystals-based microdisk resonators

As a possible cavity quantum electrodynamical system, unlike III-V quantum dots, Si-NCs are not considered ideal emitters for emission rate enhancement observations (Purcell effect). Here, we report on direct measurements of spontaneous emission rate enhancement of Si-NCs embedded in a whispering-gallery mode resonator at room temperature. Using time-resolved microphotoluminescence experiments, we demonstrate important lifetime reductions (approximately 70%) for Si-NCs coupled to cavity modes with respect to uncoupled ones. Comparing experiments with the theoretical Purcell enhancement in a bad emitter regime, we estimate effective linewidths of approximately 10 meV through which Si-NC emitters are coupled to cavity photons. Finally, our study provides an alternative method for the estimation of subnatural linewidths of quantum dots at room temperature.

Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition

An in-depth study of the physical and electrical properties of Si-nanocrystal-based MOSLEDs is presented. The active layers were fabricated with different concentrations of Si by both ion implantation and plasma-enhanced chemical vapour deposition. Devices fabricated by ion implantation exhibit a combination of direct current and field-effect luminescence under a bipolar pulsed excitation. The onset of the emission decreases with the Si excess from 6 to 3 V. The direct current emission is attributed to impact ionization and is associated with the reasonably high current levels observed in current-voltage measurements. This behaviour is in good agreement with transmission electron microscopy images that revealed a continuous and uniform Si nanocrystal distribution. The emission power efficiency is relatively low, approximately 10(-3)%, and the emission intensity exhibits fast degradation rates, as revealed from accelerated ageing experiments. Devices fabricated by chemical deposition only exhibit field-effect luminescence, whose onset decreases with the Si excess from 20 to 6 V. The absence of the continuous emission is explained by the observation of a 5 nm region free of nanocrystals, which strongly reduces the direct current through the gate. The main benefit of having this nanocrystal-free region is that tunnelling current flow assisted by nanocrystals is blocked by the SiO2 stack so that power consumption is strongly reduced, which in return increases the device power efficiency up to 0.1%. In addition, the accelerated ageing studies reveal a 50% degradation rate reduction as compared to implanted structures.

Reduction of the amplified spontaneous emission threshold in semiconducting polymer waveguides on porous silica

Hybrid organic-inorganic monomode waveguides of conjugated polymers on porous silicon (PS) substrates have been fabricated. Different low refractive index PS substrates, varying from 1.46 down to 1.18 have been studied. Amplified spontaneous emission (ASE) has been observed for all the samples and the ASE threshold has been monitored as a function of the PS refractive index. A decrease in the ASE threshold is detected when the PS refractive index decreases. These results have been analysed in the frame of a four level waveguide amplifier model and the theoretical predictions are in agreement with the experimental data.

Whispering-gallery modes and light emission from a Si-nanocrystal-based single microdisk resonator

We report on visible light emission from Si-nanocrystal based optically active microdisk resonators. The room temperature photoluminescence (PL) from single microdisks shows the characteristic modal structure of whispering-gallery modes. The emission is both TE and TM-polarized in 300 nm thick microdisks, while thinner ones (135 nm) support only TE-like modes. Thinner disks have the advantage to filter out higher order radial mode families, allowing for measuring only the most intense first order modal structure. We reveal subnanometer linewidths and corresponding quality factors as high as 2800, limited by the spectral resolution of the experimental setup. Moreover, we observe a modification of mode linewidth by a factor 13 as a function of pump power. The origin of this effect is attributed to an excited carrier absorption loss mechanism.

Porous silicon-based rugate filters

We report an experimental study of porous silicon-based rugate filters. We performed filter apodization, following a half-apodization approach, which successfully attenuated the sidelobes at both sides of the photonic stop band. We achieved successful reduction of interference ripples through the insertion of index-matching layers on the first and last interfaces. An apodized dielectric mirror and a rugate filter are compared: Appreciable differences in the harmonic presence and stop-band performance were observed and are commented on. Bandwidth control when index contrast is modified is also demonstrated. Finally, the possibility of combining different rugate filter designs to attain more complex responses is demonstrated by the achievement of a multi-stop-band filter. Numerical calculations for design optimization and comparison with experimental data are reported too.