Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

The channel conduction in 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance in these transistors. In this work, the dominant scattering mechanisms are distinguished for inversion layer electrons and holes using temperature and body-bias-dependent Hall measurements on nitrided lateral 4H-SiC MOSFETs. The effect of the transverse electric field (Eeff) on carrier mobility is analyzed under strong inversion condition where surface roughness scattering becomes prevalent. Power law dependencies of the electron and hole Hall mobility for surface roughness scattering are determined to be Eeff-1.8 and Eeff-2.4, respectively, analogous to those of silicon MOSFETs. Moreover, for n-channel MOSFETs, the effect of phonon scattering is observed at zero body bias, whereas in p-channel MOSFETs, it is observed only under negative body biases. Along with the identification of regimes governed by different scattering mechanisms, these results highlight the importance of the selection of substrate doping and of Eeff in controlling the value of channel mobility in 4H-SiC MOSFETs.

Crown Nanopores in Graphene for CO2 Capture and Filtration

With growing concerns about global warming, it has become urgent and critical to capture carbon from various emission sources (such as power plants) and even directly from air. Recent advances in materials research permit the design of various efficient approaches for capturing CO₂ with high selectivity over other gases. Here, we show that crown nanopores (resembling crown ethers) embedded in graphene can efficaciously allow CO₂ to pass and block other flue gas components (such as N₂ and O₂). We carried out extensive density functional theory-based calculations as well as classical and ab initio molecular dynamics simulations to reveal the energetics and dynamics of gas transport through crown nanopores. Our results highlight that the designed crown nanopores in graphene possess not only an excellent selectivity for CO₂ separation/capture but also fast transport (flow) rates, which are ideal for the treatment of flue gas in power plants.

Two-Dimensional-Material-Based Field-Effect Transistor Biosensor for Detecting COVID-19 Virus (SARS-CoV-2)

The emergence of rapidly expanding infectious diseases such as coronavirus (COVID-19) demands effective biosensors that can promptly detect and recognize the pathogens. Field-effect transistors based on semiconducting two-dimensional (2D) materials (2D-FETs) have been identified as potential candidates for rapid and label-free sensing applications. This is because any perturbation of such atomically thin 2D channels can significantly impact their electronic transport properties. Here, we report the use of FET based on semiconducting transition metal dichalcogenide (TMDC) WSe2 as a promising biosensor for the rapid and sensitive detection of SARS-CoV-2 in vitro. The sensor is created by functionalizing the WSe2 monolayers with a monoclonal antibody against the SARS-CoV-2 spike protein and exhibits a detection limit of down to 25 fg/μL in 0.01X phosphate-buffered saline (PBS). Comprehensive theoretical and experimental studies, including density functional theory, atomic force microscopy, Raman and photoluminescence spectroscopies, and electronic transport properties, were performed to characterize and explain the device performance. The results demonstrate that TMDC-based 2D-FETs can potentially serve as sensitive and selective biosensors for the rapid detection of infectious diseases.

Electronic and structural properties of single-crystal Jahn-Teller active Co1+x Mn2-x O4 thin films

Recent investigations on spinel CoMn2O4 have shown its potential for applications in water splitting and fuel cell technologies as it exhibits strong catalytic behavior through oxygen reduction reactivity. To further understand this material, we report for the first time the synthesis of single-crystalline Co1+x Mn2-x O4 thin films using molecular beam epitaxy. By varying sample composition, we establish links between cation stoichiometry and material properties using in-situ x-ray photoelectron spectroscopy, x-ray diffraction, scanning transmission electron microscopy, x-ray absorption spectroscopy, and spectroscopic ellipsometry. Our results indicate that excess Co ions occupy tetrahedral interstitial sites at lower excess Co stoichiometries, and become substitutional for octahedrally-coordinated Mn at higher Co levels. We compare these results with density functional theory models of stoichiometric CoMn2O4 to understand how the Jahn-Teller distortion and hybridization in Mn-O bonds impact the ability to hole dope the material with excess Co. The findings provide important insights into CoMn2O4 and related spinel oxides that are promising candidates for inexpensive oxygen reduction reaction catalysts.

Electrophoretic Transport of Single-Stranded DNA through a Two Dimensional Nanopore Patterned on an In-Plane Heterostructure

Recent advances in nanotechnology have facilitated fabrication of various solid state nanopores as a versatile alternative to biological nanopores; however, effective transport of a single-stranded DNA (ssDNA) molecule through solid state nanopores for sequencing has remained a challenge. In particular, the nonspecific interactions between the ssDNA and the engineered nanopore surface are known to impose difficulties on both transport and interrogation. Here, we show that a two-dimensional (2D) nanopore patterned on an in-plane heterostructure comprising both graphene and hexagonal boron nitride (hBN) can be utilized to transport the ssDNA electrophoretically. Energetically, a ssDNA molecule prefers to stay on the hBN domain than the graphene one since the former has a stronger van der Waals attraction with the ssDNA, as demonstrated in both classic molecular dynamics (MD) simulations and density functional theory (DFT) based calculations, which leads to the confinement of the ssDNA in the 2D nanopore. Therefore, this nanopore enables the manipulation of the conformation of a highly flexible ssDNA molecule on a flat 2D heterostructure surface, making it possible for sensing ssDNA bases using the high resolution atomic force microscopy (AFM) or scanning tunneling microscopy (STM) in the third dimension (perpendicular to the 2D surface).

First principles studies of the interactions between alkali metal elements and oxygen-passivated nanopores in graphene

We characterize the structure-property relationship of alkali metal elements in oxygen-passivated graphene pores using the density functional theory that accounts for quantum mechanical effects and charge transfer. Our description is based on the structural and electronic properties of the system and shows common trends among the different alkali metals and pores. We find that these nanopores which serve as docking sites for alkali metal elements give the strongest binding when the size of the pore is similar to the element's van der Waals radius. A linear correlation between the binding energy and the energy location of the alkali element valence state is found for all elements and pores. Analysis of the charge transfer reveals that alkali adsorption increases the local charge in the perimeters of the pore by amounts that depend on the geometry. Moreover, charge distributions in pristine graphene resemble those of an ideal conductor despite its semimetallic character and atomic thickness while oscillations in the vicinity of O-passivated nanopores are observed. Our results suggest that charge transfer is localized within a few nanometers of the pore and, therefore, allude to high density energy storage. The outcomes of this work are significant towards the application of porous graphene as effective membranes for ion filtration of water and electrode applications.

Tunable interaction between metal clusters and graphene

Using first principles calculations we find that the interaction between small transition metal clusters and graphene follows the d-band model.

Pathway to the piezoelectronic transduction logic device

The piezoelectronic transistor (PET) has been proposed as a transduction device not subject to the voltage limits of field-effect transistors. The PET transduces voltage to stress, activating a facile insulator-metal transition, thereby achieving multigigahertz switching speeds, as predicted by modeling, at lower power than the comparable generation field effect transistor (FET). Here, the fabrication and measurement of the first physical PET devices are reported, showing both on/off switching and cycling. The results demonstrate the realization of a stress-based transduction principle, representing the early steps on a developmental pathway to PET technology with potential to contribute to the IT industry.

Giant piezoresistive on/off ratios in rare-earth chalcogenide thin films enabling nanomechanical switching

Sophisticated microelectromechanical systems for device and sensor applications have flourished in the past decade. These devices exploit piezoelectric, capacitive, and piezoresistive effects, and coupling between them. However, high-performance piezoresistivity (as defined by on/off ratio) has primarily been observed in macroscopic single crystals. In this Letter, we show for the first time that rare-earth monochalcogenides in thin film form can modulate a current by more than 1000 times due to a pressure-induced insulator to metal transition. Furthermore, films as thin as 8 nm show a piezoresistive response. The combination of high performance and scalability make these promising candidates for nanoscale applications, such as the recently proposed piezoelectronic transistor (PET). The PET would mechanically couple a piezoelectric thin film with a piezoresistive switching layer, potentially scaling to higher speeds and lower powers than today's complementary metal-oxide-semiconductor technology.

Conductance through multilayer graphene films

The ballistic conductance through junctions between multilayer graphene films and several different metals is studied using ab initio calculations within the local density approximation. The system consists of films of up to four graphene layers (Bernal stacking) between metallic electrodes, assuming reasonable metal-graphene epitaxial relationships. For some metals, the conductance decays exponentially with increasing number of layers, while for others the conductance saturates with film thickness. This difference in asymptotic behavior stems from the crystal momentum (mis)match between the bulk Fermi-level states in the electrode and those in the film. In contrast, for sufficiently thin films the bonding between the metal and the adjacent graphene layer dominates, giving a metal dependence for graphene similar to that seen experimentally for single-wall carbon nanotubes. Among the metals considered here, we find Pd to be the best for electrodes to films with up to 4 graphene layers.

Nonlinear screening in multilayer graphene systems

Electrostatic screening in multilayer graphene is highly nonlinear due to the vanishing density of states at the Fermi level. Using a discrete model we study the charge screening normal to the layers. Our model shows a strong charge and temperature dependence and has a simple continuum limit at T=0 for undoped systems. Doped systems can exhibit more complex behavior due to minority-carrier screening. Most importantly we find that the screening length can vary more than an order of magnitude depending on the experimental conditions, reconciling the large range of screening lengths reported in previous experiments. This has important consequences for technological applications of multilayer graphene used in electrodes or transistor channels.

On the sensing mechanism in carbon nanotube chemiresistors

There has been recent controversy whether the response seen in carbon nanotube (CNT) chemiresistors is associated with a change in the resistance of the individual nanotubes or changes in the resistance of the junctions. In this study, we carry out a network analysis to understand the relative contributions of the nanotubes and the junctions to the change in resistance of the nanotube network. We find that the dominant mode of detection in nanotube networks changes according to the conductance level (defect level) in the nanotubes. In networks with perfect nanotubes, changes in the junctions between adjacent nanotubes and junctions between the contacts and the CNTs can cause a detectable change in the resistance of the nanotube networks, while adsorption on the nanotubes has a smaller effect. In contrast, in networks with highly defective nanotubes, the changes in the resistance of the individual nanotubes cause a detectable change in the overall resistance of a chemiresistor network, while changes in the junctions have smaller effects. The combinational effect is also observed for the case in between. The results show that the sensing mechanism of a nanotube network can change according to the defect levels of the nanotubes, which may explain the apparently contradictory results in the literature.

Chemical doping of large-area stacked graphene films for use as transparent, conducting electrodes

Graphene is considered a leading candidate to replace conventional transparent conducting electrodes because of its high transparency and exceptional transport properties. The effect of chemical p-type doping on graphene stacks was studied in order to reduce the sheet resistance of graphene films to values approaching those of conventional transparent conducting oxides. In this report, we show that large-area, stacked graphene films are effectively p-doped with nitric acid. The doping decreases the sheet resistance by a factor of 3, yielding films comprising eight stacked layers with a sheet resistance of 90 Omega/(square) at a transmittance of 80%. The films were doped either after all of the layers were stacked (last-layer-doped) or after each layer was added (interlayer-doped). A theoretical model that accurately describes the stacked graphene film system as a resistor network was developed. The model defines a characteristic transfer length where all the channels in the graphene films actively contribute to electrical transport. The experimental data shows a linear increase in conductivity with the number of graphene layers, indicating that each layer provides an additional transport channel, in good agreement with the theoretical model.

Restricted Wiedemann-Franz law and vanishing thermoelectric power in one-dimensional conductors

In one-dimensional conductors with linear E-k dispersion (Dirac systems), intra-branch thermalization is favored by elastic electron-electron interaction in contrast with electron systems with a nonlinear (parabolic) dispersion. We show that under external electric fields or thermal gradients, the carrier populations of different branches, treated as Fermi gases, have different temperatures as a consequence of self-consistent carrier-heat transport. Specifically, in the presence of elastic phonon scattering, the Wiedemann-Franz law is restricted to each branch with its specific temperature. In addition, thermoelectric power vanishes due to electron-hole symmetry, which is validated by experiment.

Nonlinear transport and heat dissipation in metallic carbon nanotubes

We show that the local temperature dependence of thermalized electron and phonon populations along metallic carbon nanotubes is the main reason behind the nonlinear transport characteristics in the high bias regime. Our model is based on the solution of the Boltzmann transport equation considering both optical and zone boundary phonon emission as well as absorption by charge carriers. It also assumes a local temperature along the nanotube, determined self-consistently with the heat transport equation. By using realistic transport parameters, our results not only reproduce experimental data for electronic transport but also provide a coherent interpretation of thermal breakdown under electric stress. In particular, electron and phonon thermalization prohibits ballistic transport in short nanotubes.

Deleterious effects of disulfiram on the respiratory electron transport system of liver mitochondria

1. The mechanism of action of disulfiram on the respiratory electron transport system of the liver mitochondria was studied in vitro. 2. Disulfiram inhibited the respiration supported by malate-glutamate as well as succinate. 3. Mitochondrial respiration inhibition was dependent upon alteration of -SH groups. 4. The inhibitory action of disulfiram might be related to the crosslinking of several proteins of the inner mitochondrial membrane. 5. The effects described above could be attributed to disulfiram per se and not to the main metabolite diethyldithiocarbamate.