1
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Gill TB, Pavlov S, Kidd CS, Dean P, Burnett AD, Dunn A, Li L, Abrosimov NV, Hübers HW, Linfield EH, Davies AG, Freeman JR. 2D Time-Domain Spectroscopy for Determination of Energy and Momentum Relaxation Rates of Hydrogen-Like Donor States in Germanium. ACS Photonics 2024; 11:1447-1455. [PMID: 38645998 PMCID: PMC11027176 DOI: 10.1021/acsphotonics.3c01522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Revised: 03/12/2024] [Accepted: 03/13/2024] [Indexed: 04/23/2024]
Abstract
We present measurements of the coherence times of excited states of hydrogen-like arsenic impurities in germanium (Ge:As) using a table-top two-dimensional time-domain spectroscopy (2D-TDS) system. We show that this laboratory system is capable of resolving the coherence lifetimes of atomic-like excited levels of impurity centers in semiconductors, such as those used in solid-state quantum information technologies, on a subpicosecond time scale. By fitting the coherent nonlinear response of the system with the known intracenter transition frequencies, we are able to monitor coherent population transfer and decay of the transitions from the 2p0 and 2p± states for different low excitation pulse fields. Furthermore, by examining the off-diagonal resonances in the 2D frequency-domain map, we are able to identify coherences between excited electronic states that are not visible via conventional single-frequency pump-probe or Hahn-echo measurements.
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Affiliation(s)
- Thomas B. Gill
- School
of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, U.K.
| | - Sergei Pavlov
- Institute
of Optical Sensor Systems, German Aerospace
Center (DLR), Berlin 12489, Germany
| | - Connor S. Kidd
- School
of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, U.K.
| | - Paul Dean
- School
of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, U.K.
| | - Andrew D. Burnett
- School
of Chemistry, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, U.K.
| | - Aniela Dunn
- School
of Chemistry, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, U.K.
| | - Lianhe Li
- School
of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, U.K.
| | | | - Heinz-Wilhelm Hübers
- Institute
of Optical Sensor Systems, German Aerospace
Center (DLR), Berlin 12489, Germany
- Institut
für Physik, Humboldt-Universität
zu Berlin, Berlin 12489, Germany
| | - Edmund H. Linfield
- School
of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, U.K.
| | - A. Giles Davies
- School
of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, U.K.
| | - Joshua R. Freeman
- School
of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, U.K.
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2
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Huang JY, Su RY, Lim WH, Feng M, van Straaten B, Severin B, Gilbert W, Dumoulin Stuyck N, Tanttu T, Serrano S, Cifuentes JD, Hansen I, Seedhouse AE, Vahapoglu E, Leon RCC, Abrosimov NV, Pohl HJ, Thewalt MLW, Hudson FE, Escott CC, Ares N, Bartlett SD, Morello A, Saraiva A, Laucht A, Dzurak AS, Yang CH. High-fidelity spin qubit operation and algorithmic initialization above 1 K. Nature 2024; 627:772-777. [PMID: 38538941 PMCID: PMC10972758 DOI: 10.1038/s41586-024-07160-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 02/05/2024] [Indexed: 04/01/2024]
Abstract
The encoding of qubits in semiconductor spin carriers has been recognized as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale1-10. However, the operation of the large number of qubits required for advantageous quantum applications11-13 will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures. As the scale-up accelerates, it becomes imperative to establish fault-tolerant operation above 1 K, at which the cooling power is orders of magnitude higher14-18. Here we tune up and operate spin qubits in silicon above 1 K, with fidelities in the range required for fault-tolerant operations at these temperatures19-21. We design an algorithmic initialization protocol to prepare a pure two-qubit state even when the thermal energy is substantially above the qubit energies and incorporate radiofrequency readout to achieve fidelities up to 99.34% for both readout and initialization. We also demonstrate single-qubit Clifford gate fidelities up to 99.85% and a two-qubit gate fidelity of 98.92%. These advances overcome the fundamental limitation that the thermal energy must be well below the qubit energies for the high-fidelity operation to be possible, surmounting a main obstacle in the pathway to scalable and fault-tolerant quantum computation.
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Affiliation(s)
- Jonathan Y Huang
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia.
| | - Rocky Y Su
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
| | - Wee Han Lim
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - MengKe Feng
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
| | | | - Brandon Severin
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
- Department of Engineering Science, University of Oxford, Oxford, UK
| | - Will Gilbert
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Nard Dumoulin Stuyck
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Tuomo Tanttu
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Santiago Serrano
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
| | - Jesus D Cifuentes
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
| | - Ingvild Hansen
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
| | - Amanda E Seedhouse
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
| | - Ensar Vahapoglu
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Ross C C Leon
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
- Quantum Motion Technologies, London, UK
| | | | | | - Michael L W Thewalt
- Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada
| | - Fay E Hudson
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Christopher C Escott
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Natalia Ares
- Department of Engineering Science, University of Oxford, Oxford, UK
| | - Stephen D Bartlett
- Centre for Engineered Quantum Systems, School of Physics, University of Sydney, Sydney, New South Wales, Australia
| | - Andrea Morello
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
| | - Andre Saraiva
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Arne Laucht
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Andrew S Dzurak
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia.
- Diraq, Sydney, New South Wales, Australia.
| | - Chih Hwan Yang
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales, Australia.
- Diraq, Sydney, New South Wales, Australia.
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3
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DeAbreu A, Bowness C, Alizadeh A, Chartrand C, Brunelle NA, MacQuarrie ER, Lee-Hone NR, Ruether M, Kazemi M, Kurkjian ATK, Roorda S, Abrosimov NV, Pohl HJ, Thewalt MLW, Higginbottom DB, Simmons S. Waveguide-integrated silicon T centres. Opt Express 2023; 31:15045-15057. [PMID: 37157355 DOI: 10.1364/oe.482008] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spin qubits, and proven native integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we demonstrate further levels of integration by characterizing T centre spin ensembles in single-mode waveguides in SOI. In addition to measuring long spin T1 times, we report on the integrated centres' optical properties. We find that the narrow homogeneous linewidth of these waveguide-integrated emitters is already sufficiently low to predict the future success of remote spin-entangling protocols with only modest cavity Purcell enhancements. We show that further improvements may still be possible by measuring nearly lifetime-limited homogeneous linewidths in isotopically pure bulk crystals. In each case the measured linewidths are more than an order of magnitude lower than previously reported and further support the view that high-performance, large-scale distributed quantum technologies based upon T centres in silicon may be attainable in the near term.
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4
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Gilbert W, Tanttu T, Lim WH, Feng M, Huang JY, Cifuentes JD, Serrano S, Mai PY, Leon RCC, Escott CC, Itoh KM, Abrosimov NV, Pohl HJ, Thewalt MLW, Hudson FE, Morello A, Laucht A, Yang CH, Saraiva A, Dzurak AS. On-demand electrical control of spin qubits. Nat Nanotechnol 2023; 18:131-136. [PMID: 36635331 DOI: 10.1038/s41565-022-01280-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2022] [Accepted: 10/24/2022] [Indexed: 06/17/2023]
Abstract
Once called a 'classically non-describable two-valuedness' by Pauli, the electron spin forms a qubit that is naturally robust to electric fluctuations. Paradoxically, a common control strategy is the integration of micromagnets to enhance the coupling between spins and electric fields, which, in turn, hampers noise immunity and adds architectural complexity. Here we exploit a switchable interaction between spins and orbital motion of electrons in silicon quantum dots, without a micromagnet. The weak effects of relativistic spin-orbit interaction in silicon are enhanced, leading to a speed up in Rabi frequency by a factor of up to 650 by controlling the energy quantization of electrons in the nanostructure. Fast electrical control is demonstrated in multiple devices and electronic configurations. Using the electrical drive, we achieve a coherence time T2,Hahn ≈ 50 μs, fast single-qubit gates with Tπ/2 = 3 ns and gate fidelities of 99.93%, probed by randomized benchmarking. High-performance all-electrical control improves the prospects for scalable silicon quantum computing.
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Affiliation(s)
- Will Gilbert
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia.
- Diraq, Sydney, New South Wales, Australia.
| | - Tuomo Tanttu
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Wee Han Lim
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - MengKe Feng
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
| | - Jonathan Y Huang
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
| | - Jesus D Cifuentes
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
| | - Santiago Serrano
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
| | - Philip Y Mai
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
| | - Ross C C Leon
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
| | - Christopher C Escott
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Kohei M Itoh
- School of Fundamental Science and Technology, Keio University, Yokohama, Japan
| | | | | | - Michael L W Thewalt
- Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada
| | - Fay E Hudson
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Andrea Morello
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
| | - Arne Laucht
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Chih Hwan Yang
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia
- Diraq, Sydney, New South Wales, Australia
| | - Andre Saraiva
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia.
- Diraq, Sydney, New South Wales, Australia.
| | - Andrew S Dzurak
- School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney, New South Wales, Australia.
- Diraq, Sydney, New South Wales, Australia.
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5
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Haak J, Krüger J, Abrosimov NV, Helling C, Schulz S, Cutsail Iii GE. X-Band Parallel-Mode and Multifrequency Electron Paramagnetic Resonance Spectroscopy of S = 1/2 Bismuth Centers. Inorg Chem 2022; 61:11173-11181. [PMID: 35834368 PMCID: PMC9326968 DOI: 10.1021/acs.inorgchem.2c01141] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
The recent successes in the isolation and characterization of several bismuth radicals inspire the development of new spectroscopic approaches for the in-depth analysis of their electronic structure. Electron paramagnetic resonance (EPR) spectroscopy is a powerful tool for the characterization of main group radicals. However, the large electron-nuclear hyperfine interactions of Bi (209Bi, I = 9/2) have presented difficult challenges to fully interpret the spectral properties for some of these radicals. Parallel-mode EPR (B1∥B0) is almost exclusively employed for the study of S > 1/2 systems but becomes feasible for S = 1/2 systems with large hyperfine couplings, offering a distinct EPR spectroscopic approach. Herein, we demonstrate the application of conventional X-band parallel-mode EPR for S = 1/2, I = 9/2 spin systems: Bi-doped crystalline silicon (Si:Bi) and the molecular Bi radicals [L(X)Ga]2Bi• (X = Cl or I) and [L(Cl)GaBi(MecAAC)]•+ (L = HC[MeCN(2,6-iPr2C6H3)]2). In combination with multifrequency perpendicular-mode EPR (X-, Q-, and W-band frequencies), we were able to fully refine both the anisotropic g- and A-tensors of these molecular radicals. The parallel-mode EPR experiments demonstrated and discussed here have the potential to enable the characterization of other S = 1/2 systems with large hyperfine couplings, which is often challenging by conventional perpendicular-mode EPR techniques. Considerations pertaining to the choice of microwave frequency are discussed for relevant spin-systems.
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Affiliation(s)
- Julia Haak
- Max Planck Institute for Chemical Energy Conversion (CEC), Stiftstraße 34-36, 45470 Mülheim an der Ruhr, Germany.,Institute of Inorganic Chemistry, University of Duisburg-Essen, Universitätsstraße 5-7, 45141 Essen, Germany
| | - Julia Krüger
- Institute of Inorganic Chemistry, University of Duisburg-Essen, Universitätsstraße 5-7, 45141 Essen, Germany.,Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, Universitätsstraße 5-7, 45141 Essen, Germany
| | - Nikolay V Abrosimov
- Leibniz-Institut für Kristallzüchtung, Max-Born Strasse 2, 12489 Berlin, Germany
| | - Christoph Helling
- Institute of Inorganic Chemistry, University of Duisburg-Essen, Universitätsstraße 5-7, 45141 Essen, Germany.,Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, Universitätsstraße 5-7, 45141 Essen, Germany
| | - Stephan Schulz
- Institute of Inorganic Chemistry, University of Duisburg-Essen, Universitätsstraße 5-7, 45141 Essen, Germany.,Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, Universitätsstraße 5-7, 45141 Essen, Germany
| | - George E Cutsail Iii
- Max Planck Institute for Chemical Energy Conversion (CEC), Stiftstraße 34-36, 45470 Mülheim an der Ruhr, Germany.,Institute of Inorganic Chemistry, University of Duisburg-Essen, Universitätsstraße 5-7, 45141 Essen, Germany
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6
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Sauter E, Abrosimov NV, Hübner J, Oestreich M. Low Temperature Relaxation of Donor Bound Electron Spins in ^{28}Si:P. Phys Rev Lett 2021; 126:137402. [PMID: 33861119 DOI: 10.1103/physrevlett.126.137402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2020] [Accepted: 03/08/2021] [Indexed: 06/12/2023]
Abstract
We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped ^{28}Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h. The ^{28}Si:P spin relaxation rate increases linearly with temperature in the regime below 1 K and shows a distinct transition to a T^{9} dependence which dominates the spin relaxation between 2 and 4 K at low magnetic fields. The T^{7} dependence reported for natural silicon is absent. At high magnetic fields, the spin relaxation is dominated by the magnetic field dependent single phonon spin relaxation process. This process is well documented for natural silicon at finite temperatures but the ^{28}Si:P measurements validate additionally that the bosonic phonon distribution leads at very low temperatures to a deviation from the linear temperature dependence of Γ as predicted by theory.
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Affiliation(s)
- E Sauter
- Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany
| | - N V Abrosimov
- Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
| | - J Hübner
- Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany
| | - M Oestreich
- Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany
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7
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Dessmann N, Le NH, Eless V, Chick S, Saeedi K, Perez-Delgado A, Pavlov SG, van der Meer AFG, Litvinenko KL, Galbraith I, Abrosimov NV, Riemann H, Pidgeon CR, Aeppli G, Redlich B, Murdin BN. Highly efficient THz four-wave mixing in doped silicon. Light Sci Appl 2021; 10:71. [PMID: 33795642 PMCID: PMC8016830 DOI: 10.1038/s41377-021-00509-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/10/2020] [Revised: 03/02/2021] [Accepted: 03/10/2021] [Indexed: 06/12/2023]
Abstract
Third-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.
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Affiliation(s)
- Nils Dessmann
- Radboud University, Institute for Molecules and Materials, HFML-FELIX, Nijmegen, The Netherlands.
| | - Nguyen H Le
- Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK.
| | - Viktoria Eless
- Radboud University, Institute for Molecules and Materials, HFML-FELIX, Nijmegen, The Netherlands
| | - Steven Chick
- Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK
| | - Kamyar Saeedi
- Radboud University, Institute for Molecules and Materials, HFML-FELIX, Nijmegen, The Netherlands
| | - Alberto Perez-Delgado
- Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK
| | - Sergey G Pavlov
- Institute of Optical Sensor Systems, German Aerospace Center, Berlin, Germany
| | | | - Konstantin L Litvinenko
- Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK
| | - Ian Galbraith
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
| | | | - Helge Riemann
- Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
| | - Carl R Pidgeon
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
| | - Gabriel Aeppli
- Laboratory for Solid State Physics, ETH Zürich, 8093, Zürich, Switzerland
- Institut de Physique, EPFL, 1015, Lausanne, Switzerland
- Paul Scherrer Institute, 5232, Villigen, Switzerland
| | - Britta Redlich
- Radboud University, Institute for Molecules and Materials, HFML-FELIX, Nijmegen, The Netherlands
| | - Benedict N Murdin
- Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK
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8
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Litvinenko KL, Le NH, Redlich B, Pidgeon CR, Abrosimov NV, Andreev Y, Huang Z, Murdin BN. The multi-photon induced Fano effect. Nat Commun 2021; 12:454. [PMID: 33469024 PMCID: PMC7815926 DOI: 10.1038/s41467-020-20534-0] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/25/2020] [Accepted: 10/21/2020] [Indexed: 12/04/2022] Open
Abstract
The ordinary Fano effect occurs in many-electron atoms and requires an autoionizing state. With such a state, photo-ionization may proceed via pathways that interfere, and the characteristic asymmetric resonance structures appear in the continuum. Here we demonstrate that Fano structure may also be induced without need of auto-ionization, by dressing the continuum with an ordinary bound state in any atom by a coupling laser. Using multi-photon processes gives complete, ultra-fast control over the interference. We show that a line-shape index q near unity (maximum asymmetry) may be produced in hydrogenic silicon donors with a relatively weak beam. Since the Fano lineshape has both constructive and destructive interference, the laser control opens the possibility of state-selective detection with enhancement on one side of resonance and invisibility on the other. We discuss a variety of atomic and molecular spectroscopies, and in the case of silicon donors we provide a calculation for a qubit readout application. Fano resonances occur in many platforms that have auto-ionizing states. Here the authors show that auto-ionizing states are not required for multi-photon Fano resonance in a Si:P system with significant screening by using a pump-probe method.
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Affiliation(s)
- K L Litvinenko
- Department of Physics, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK.
| | - Nguyen H Le
- Department of Physics, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
| | - B Redlich
- FELIX Laboratory, Institute for Molecules and Materials, Radboud University, Nijmegen, The Netherlands
| | - C R Pidgeon
- Institute of Photonics and Quantum Science, SUPA, Heriot-Watt University, Edinburgh, UK
| | - N V Abrosimov
- Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
| | - Y Andreev
- Institute of Monitoring of Climatic and Ecological Systems of SB RAS, 10/3, Academicheskii Avenue, Tomsk, 634055, Russia.,National Research Tomsk State University, 1, Novosobornaya Strasse, Tomsk, 634050, Russia
| | - Zhiming Huang
- State Key Laboratory of Infrared Physics and Laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics, CAS, 500 Yutian Road, Shanghai, 200083, China
| | - B N Murdin
- Department of Physics, Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
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9
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Kobayashi T, Salfi J, Chua C, van der Heijden J, House MG, Culcer D, Hutchison WD, Johnson BC, McCallum JC, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Simmons MY, Rogge S. Engineering long spin coherence times of spin-orbit qubits in silicon. Nat Mater 2021; 20:38-42. [PMID: 32690913 DOI: 10.1038/s41563-020-0743-3] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2019] [Accepted: 06/18/2020] [Indexed: 06/11/2023]
Abstract
Electron-spin qubits have long coherence times suitable for quantum technologies. Spin-orbit coupling promises to greatly improve spin qubit scalability and functionality, allowing qubit coupling via photons, phonons or mutual capacitances, and enabling the realization of engineered hybrid and topological quantum systems. However, despite much recent interest, results to date have yielded short coherence times (from 0.1 to 1 μs). Here we demonstrate ultra-long coherence times of 10 ms for holes where spin-orbit coupling yields quantized total angular momentum. We focus on holes bound to boron acceptors in bulk silicon 28, whose wavefunction symmetry can be controlled through crystal strain, allowing direct control over the longitudinal electric dipole that causes decoherence. The results rival the best electron-spin qubits and are 104 to 105 longer than previous spin-orbit qubits. These results open a pathway to develop new artificial quantum systems and to improve the functionality and scalability of spin-based quantum technologies.
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Affiliation(s)
- Takashi Kobayashi
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia.
- Department of Physics, Tohoku University, Sendai, Japan.
- CEMS, RIKEN, Wako, Japan.
| | - Joseph Salfi
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia
| | - Cassandra Chua
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia
| | - Joost van der Heijden
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia
| | - Matthew G House
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia
| | - Dimitrie Culcer
- School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia
- Australian Research Council Centre of Excellence in Low-Energy Electronics Technologies, The University of New South Wales Sydney, Sydney, New South Wales, Australia
| | - Wayne D Hutchison
- School of Science, The University of New South Wales Canberra, Canberra, Australian Capital Territory, Australia
| | - Brett C Johnson
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, Victoria, Australia
| | - Jeff C McCallum
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, Victoria, Australia
| | - Helge Riemann
- Leibniz-Institut für Kristallzüchtung, Berlin, Germany
| | | | | | | | - Michelle Y Simmons
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia
| | - Sven Rogge
- Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales Sydney, Sydney, New South Wales, Australia.
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10
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Morozova NV, Korobeinikov IV, Abrosimov NV, Ovsyannikov SV. Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure. CrystEngComm 2020. [DOI: 10.1039/d0ce00672f] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Si–Ge crystals are promising materials for use in various stress-controlled electronic junctions for next-generation nanoelectronic devices.
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Affiliation(s)
- Natalia V. Morozova
- M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences
- Yekaterinburg 620137
- Russia
| | - Igor V. Korobeinikov
- M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences
- Yekaterinburg 620137
- Russia
| | | | - Sergey V. Ovsyannikov
- Bayerisches Geoinstitut
- Universität Bayreuth
- Bayreuth
- Germany
- Institute for Solid State Chemistry of Ural Branch of Russian Academy of Sciences
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11
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Abrosimov NV, Kurlov VN, Schewski R, Winkler J. Automated Growth of Si
1−
x
Ge
x
Single Crystals with Constant Axial Gradient by Czochralski Technique. Crystal Research and Technology 2019. [DOI: 10.1002/crat.201900097] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
| | - Vladimir N. Kurlov
- Institute of Solid State Physics of Russian Academy of Sciences 142432 Chernogolovka Russia
| | - Robert Schewski
- Leibniz‐Institut für Kristallzüchtung (IKZ) Max‐Born‐Str.2 12489 Berlin Germany
| | - Jan Winkler
- Technische Universität Dresden Institut für Regelungs‐ und Steuerungstheorie 01062 Dresden Germany
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12
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Morse KJ, Abraham RJS, DeAbreu A, Bowness C, Richards TS, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Thewalt MLW, Simmons S. A photonic platform for donor spin qubits in silicon. Sci Adv 2017; 3:e1700930. [PMID: 28782032 PMCID: PMC5529058 DOI: 10.1126/sciadv.1700930] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2017] [Accepted: 06/19/2017] [Indexed: 05/25/2023]
Abstract
Donor spins in silicon are highly competitive qubits for upcoming quantum technologies, offering complementary metal-oxide semiconductor compatibility, coherence (T2) times of minutes to hours, and simultaneous initialization, manipulation, and readout fidelities near ~99.9%. This allows for many quantum error correction protocols, which will be essential for scale-up. However, a proven method of reliably coupling spatially separated donor qubits has yet to be identified. We present a scalable silicon-based platform using the unique optical properties of "deep" chalcogen donors. For the prototypical 77Se+ donor, we measure lower bounds on the transition dipole moment and excited-state lifetime, enabling access to the strong coupling limit of cavity quantum electrodynamics using known silicon photonic resonator technology and integrated silicon photonics. We also report relatively strong photon emission from this same transition. These results unlock clear pathways for silicon-based quantum computing, spin-to-photon conversion, photonic memories, integrated single-photon sources, and all-optical switches.
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Affiliation(s)
- Kevin J. Morse
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - Rohan J. S. Abraham
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - Adam DeAbreu
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - Camille Bowness
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - Timothy S. Richards
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - Helge Riemann
- Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
| | | | - Peter Becker
- Physikalisch-Technische Bundesanstalt (PTB) Braunschweig, 38116 Braunschweig, Germany
| | | | - Michael L. W. Thewalt
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - Stephanie Simmons
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
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13
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Churbanov MF, Gavva VA, Bulanov AD, Abrosimov NV, Kozyrev EA, Andryushchenko IA, Lipskii VA, Adamchik SA, Troshin OY, Lashkov AY, Gusev AV. Production of germanium stable isotopes single crystals. Crystal Research and Technology 2017. [DOI: 10.1002/crat.201700026] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Mihail Fedorovich Churbanov
- G.G. Devyatykh Institute of Chemistry of High-Purity Substances of RAS; Tropinina str.,49 603951 Nizhnii Novgorod Russia
| | - Vladimir A. Gavva
- G.G. Devyatykh Institute of Chemistry of High-Purity Substances of RAS; Tropinina str.,49 603951 Nizhnii Novgorod Russia
| | - Andrey D. Bulanov
- G.G. Devyatykh Institute of Chemistry of High-Purity Substances of RAS; Tropinina str.,49 603951 Nizhnii Novgorod Russia
| | | | - Eugeniy A. Kozyrev
- G.G. Devyatykh Institute of Chemistry of High-Purity Substances of RAS; Tropinina str.,49 603951 Nizhnii Novgorod Russia
| | - Ivan A. Andryushchenko
- G.G. Devyatykh Institute of Chemistry of High-Purity Substances of RAS; Tropinina str.,49 603951 Nizhnii Novgorod Russia
| | - Victor A. Lipskii
- G.G. Devyatykh Institute of Chemistry of High-Purity Substances of RAS; Tropinina str.,49 603951 Nizhnii Novgorod Russia
| | - Sergey A. Adamchik
- G.G. Devyatykh Institute of Chemistry of High-Purity Substances of RAS; Tropinina str.,49 603951 Nizhnii Novgorod Russia
| | - Oleg Yu. Troshin
- G.G. Devyatykh Institute of Chemistry of High-Purity Substances of RAS; Tropinina str.,49 603951 Nizhnii Novgorod Russia
| | - Artem Yu. Lashkov
- G.G. Devyatykh Institute of Chemistry of High-Purity Substances of RAS; Tropinina str.,49 603951 Nizhnii Novgorod Russia
| | - Anatoly V. Gusev
- G.G. Devyatykh Institute of Chemistry of High-Purity Substances of RAS; Tropinina str.,49 603951 Nizhnii Novgorod Russia
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14
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Sennikov PG, Kornev RA, Abrosimov NV. Production of stable silicon and germanium isotopes via their enriched volatile compounds. J Radioanal Nucl Chem 2015. [DOI: 10.1007/s10967-015-4192-4] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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15
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Gumann P, Patange O, Ramanathan C, Haas H, Moussa O, Thewalt MLW, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Itoh KM, Cory DG. Inductive measurement of optically hyperpolarized phosphorous donor nuclei in an isotopically enriched silicon-28 crystal. Phys Rev Lett 2014; 113:267604. [PMID: 25615386 DOI: 10.1103/physrevlett.113.267604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2014] [Indexed: 06/04/2023]
Abstract
We experimentally demonstrate the first inductive readout of optically hyperpolarized phosphorus-31 donor nuclear spins in an isotopically enriched silicon-28 crystal. The concentration of phosphorus donors in the crystal was 1.5×10(15) cm(-3), 3 orders of magnitude lower than has previously been detected via direct inductive detection. The signal-to-noise ratio measured in a single free induction decay from a 1 cm(3) sample (≈10(15) spins) was 113. By transferring the sample to an X-band ESR spectrometer, we were able to obtain a lower bound for the nuclear spin polarization at 1.7 K of ∼64%. The (31)P-T2 measured with a Hahn echo sequence was 420 ms at 1.7 K, which was extended to 1.2 s with a Carr Purcell cycle. The T1 of the (31)P nuclear spins at 1.7 K is extremely long and could not be determined, as no decay was observed even on a time scale of 4.5 h. Optical excitation was performed with a 1047 nm laser, which provided above-band-gap excitation of the silicon. The buildup of the hyperpolarization at 4.2 K followed a single exponential with a characteristic time of 577 s, while the buildup at 1.7 K showed biexponential behavior with characteristic time constants of 578 and 5670 s.
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Affiliation(s)
- P Gumann
- Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada and Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada and Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | - O Patange
- Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada and Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - C Ramanathan
- Department of Physics and Astronomy, Wilder Laboratory, Dartmouth College, Hanover, New Hampshire 03755, USA
| | - H Haas
- Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada and Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - O Moussa
- Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada and Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - M L W Thewalt
- Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - H Riemann
- Leibniz-Institut fuer Kristallzuechtung, 12489 Berlin, Germany
| | - N V Abrosimov
- Leibniz-Institut fuer Kristallzuechtung, 12489 Berlin, Germany
| | - P Becker
- PTB Braunschweig, 38116 Braunschweig, Germany
| | - H-J Pohl
- VITCON Projectconsult GmbH, 07743 Jena, Germany
| | - K M Itoh
- School of Fundamental Science and Technology, Keio University, Yokohama, 3-14-1 Hiyoshi 223-8522, Japan
| | - D G Cory
- Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada and Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada and Canadian Institute for Advanced Research, Toronto, Ontario M5G 1Z8, Canada and Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada and Perimeter Institute for Theoretical Physics, Waterloo, Ontario N2L 2Y5, Canada
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16
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Bagli E, Bandiera L, Guidi V, Mazzolari A, De Salvador D, Maggioni G, Berra A, Lietti D, Prest M, Vallazza E, Abrosimov NV. Coherent effects of high-energy particles in a graded Si(1-x)Ge(x) crystal. Phys Rev Lett 2013; 110:175502. [PMID: 23679744 DOI: 10.1103/physrevlett.110.175502] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2012] [Revised: 01/18/2013] [Indexed: 06/02/2023]
Abstract
A graded Si(1-x)Ge(x) crystal has been manufactured for operation with high-energy protons to excite coherent interactions of the particles with the crystal such as channeling and volume reflection. The crystal had the shape of a parallelepiped though its (111) atomic planes were curved at a radius of 25.6 m because of the graded Ge content. The crystal was exposed to a 400 GeV/c proton beam at the external lines of CERN Super Proton Synchrotron to probe its capability to steer high-energy particles. Measured deflection efficiency was 62.0% under planar channeling and 96.0% under volume reflection. Such values are critically compared to their counterparts for a standard bent Si crystal under peer conditions. A Monte Carlo simulation of the dynamics of channeled and volume reflected particles in a graded crystal including the effect of Ge impurities and of lattice dislocations has been carried out. We found that the effect of crystal imperfections spoiled the efficiency of channeling while it negligibly affected the performance of volume reflection. We finally propose the usage of the graded crystal as a primary scatterer to aid halo collimation for the new generation of hadronic machines. As a unique feature, a properly cut graded crystal circumvents the problem of the miscut angle, which is currently a severe limitation for implementation of crystal-assisted collimation.
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Affiliation(s)
- E Bagli
- INFN Sezione di Ferrara, Dipartimento di Fisica e Scienze della Terra, Università di Ferrara Via Saragat 1, 44100 Ferrara, Italy
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17
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Steger M, Saeedi K, Thewalt MLW, Morton JJL, Riemann H, Abrosimov NV, Becker P, Pohl HJ. Quantum information storage for over 180 s using donor spins in a 28Si "semiconductor vacuum". Science 2012; 336:1280-3. [PMID: 22679091 DOI: 10.1126/science.1217635] [Citation(s) in RCA: 228] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
Abstract
A quantum computer requires systems that are isolated from their environment, but can be integrated into devices, and whose states can be measured with high accuracy. Nuclear spins in solids promise long coherence lifetimes, but they are difficult to initialize into known states and to detect with high sensitivity. We show how the distinctive optical properties of enriched (28)Si enable the use of hyperfine-resolved optical transitions, as previously applied to great effect for isolated atoms and ions in vacuum. Together with efficient Auger photoionization, these resolved hyperfine transitions permit rapid nuclear hyperpolarization and electrical spin-readout. We combine these techniques to detect nuclear magnetic resonance from dilute (31)P in the purest available sample of (28)Si, at concentrations inaccessible to conventional measurements, measuring a solid-state coherence time of over 180 seconds.
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Affiliation(s)
- M Steger
- Department of Physics, Simon Fraser University, Burnaby, BC, Canada
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18
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George RE, Witzel W, Riemann H, Abrosimov NV, Nötzel N, Thewalt MLW, Morton JJL. Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si. Phys Rev Lett 2010; 105:067601. [PMID: 20868014 DOI: 10.1103/physrevlett.105.067601] [Citation(s) in RCA: 33] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2010] [Indexed: 05/29/2023]
Abstract
Donors in silicon hold considerable promise for emerging quantum technologies, due to their uniquely long electron spin coherence times. Bismuth donors in silicon differ from more widely studied group V donors, such as phosphorous, in several significant respects: They have the strongest binding energy (70.98 meV), a large nuclear spin (I=9/2), and a strong hyperfine coupling constant (A=1475.4 MHz). These larger energy scales allow us to perform a detailed test of theoretical models describing the spectral diffusion mechanism that is known to govern the electron spin decoherence of P donors in natural silicon. We report the electron-nuclear double resonance spectra of the Bi donor, across the range 200 MHz to 1.4 GHz, and confirm that coherence transfer is possible between electron and nuclear spin degrees of freedom at these higher frequencies.
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Affiliation(s)
- Richard E George
- CAESR, Clarendon Laboratory, Department of Physics, Oxford University, Oxford OX1 3PU, United Kingdom
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19
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Sekiguchi T, Steger M, Saeedi K, Thewalt MLW, Riemann H, Abrosimov NV, Nötzel N. Hyperfine structure and nuclear hyperpolarization observed in the bound exciton luminescence of Bi donors in natural Si. Phys Rev Lett 2010; 104:137402. [PMID: 20481913 DOI: 10.1103/physrevlett.104.137402] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2009] [Indexed: 05/29/2023]
Abstract
As the deepest group-V donor in Si, Bi has by far the largest hyperfine interaction and also a large I = 9/2 nuclear spin. At zero field this splits the donor ground state into states having total spin 5 and 4, which are fully resolved in the photoluminescence spectrum of Bi donor bound excitons. Under a magnetic field, the 60 expected allowed transitions cannot be individually resolved, but the effects of the nuclear spin distribution, -9/2 < or = I(z) < or = 9/2, are clearly observed. A strong hyperpolarization of the nuclear spin towards I(z) = -9/2 is observed to result from the nonresonant optical excitation. This is very similar to the recently reported optical hyperpolarization of P donors observed by EPR at higher magnetic fields. We introduce a new model to explain this effect, and predict that it may be very fast.
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Affiliation(s)
- T Sekiguchi
- Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6
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20
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Yang A, Steger M, Sekiguchi T, Thewalt MLW, Ladd TD, Itoh KM, Riemann H, Abrosimov NV, Becker P, Pohl HJ. Simultaneous subsecond hyperpolarization of the nuclear and electron spins of phosphorus in silicon by optical pumping of exciton transitions. Phys Rev Lett 2009; 102:257401. [PMID: 19659118 DOI: 10.1103/physrevlett.102.257401] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2009] [Indexed: 05/28/2023]
Abstract
We demonstrate a method which can hyperpolarize both the electron and nuclear spins of 31P donors in Si at low field, where both would be essentially unpolarized in equilibrium. It is based on the selective ionization of donors in a specific hyperfine state by optically pumping donor bound exciton hyperfine transitions, which can be spectrally resolved in 28Si. Electron and nuclear polarizations of 90% and 76%, respectively, are obtained in less than a second, providing an initialization mechanism for qubits based on these spins, and enabling further ESR and NMR studies on dilute 31P in 28Si.
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Affiliation(s)
- A Yang
- Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6
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21
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Steger M, Yang A, Stavrias N, Thewalt MLW, Riemann H, Abrosimov NV, Churbanov MF, Gusev AV, Bulanov AD, Kovalev ID, Kaliteevskii AK, Godisov ON, Becker P, Pohl HJ. Reduction of the linewidths of deep luminescence centers in 28Si reveals fingerprints of the isotope constituents. Phys Rev Lett 2008; 100:177402. [PMID: 18518336 DOI: 10.1103/physrevlett.100.177402] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2008] [Indexed: 05/26/2023]
Abstract
Dramatic reductions of the linewidths of well-known deep centers in 28Si reveal "isotopic fingerprints" of the constituents. The approximately 1014 meV Cu center, thought to be either a Cu pair or an isolated Cu, is shown to contain four Cu atoms, and the approximately 780 meV Ag center is shown to contain four Ag. The approximately 944 meV ;{*}Cu center, thought to be a different configuration of a Cu pair, in fact contains three Cu and one Ag, and a new two-Cu two-Ag center is found. The approximately 735 meV center, previously assigned to Fe, actually contains Au and three Cu. This suggests a family of four-atom (Cu, Ag, Au) centers.
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Affiliation(s)
- M Steger
- Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6
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22
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Yang A, Steger M, Karaiskaj D, Thewalt MLW, Cardona M, Itoh KM, Riemann H, Abrosimov NV, Churbanov MF, Gusev AV, Bulanov AD, Kaliteevskii AK, Godisov ON, Becker P, Pohl HJ, Ager JW, Haller EE. Optical detection and ionization of donors in specific electronic and nuclear spin States. Phys Rev Lett 2006; 97:227401. [PMID: 17155840 DOI: 10.1103/physrevlett.97.227401] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2006] [Indexed: 05/12/2023]
Abstract
We resolve the remarkably sharp bound exciton transitions of highly enriched 28Si using a single-frequency laser and photoluminescence excitation spectroscopy, as well as photocurrent spectroscopy. Well-resolved doublets in the spectrum of the 31P donor reflect the hyperfine coupling of the electronic and nuclear donor spins. The optical detection of the nuclear spin state, and selective pumping and ionization of donors in specific electronic and nuclear spin states, suggests a number of new possibilities which could be useful for the realization of silicon-based quantum computers.
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Affiliation(s)
- A Yang
- Department of Physics, Simon Fraser University, Burnaby, British Columbia, V5A 1S6 Canada
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23
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Erko A, Veldkamp M, Gudat W, Abrosimov NV, Rossolenko SN, Shekhtman V, Khasanov S, Alex V, Groth S, Schröder W, Vidal B, Yakshin A. Graded X-ray Optics for Synchrotron Radiation Applications. J Synchrotron Radiat 1998; 5:239-245. [PMID: 15263485 DOI: 10.1107/s0909049597019043] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/1997] [Accepted: 12/08/1997] [Indexed: 05/24/2023]
Abstract
Using X-ray diffractometry and spectral measurements, the structure and properties of graded X-ray optical elements have been examined. Experimental and theoretical data on X-ray supermirrors, which were prepared by the magnetron sputtering technique using precise thickness control, are reported. Measurements on graded aperiodic Si(1-x)Ge(x) single crystals, which were grown by the Czochralski technique, are also presented. The lattice parameter of such a crystal changes almost linearly with increasing Ge concentration. The measurements indicate that Si(1-x)Ge(x) crystals with concentrations up to 7 at.% Ge can be grown with a quality comparable to that of pure Si crystals.
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Affiliation(s)
- A Erko
- Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung (BESSY) mbH, Lentzeallee 100, D-14195 Berlin, Germany
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