Planar Thermoelectric Microgenerators in Application to Power RFID Tags

This paper presents an innovative approach to the integration of thermoelectric microgenerators (μTEGs) based on thick-film thermopiles of planar constantan-silver (CuNi-Ag) and calcium cobaltite oxide-silver (Ca3Co4O9-Ag) thick-film thermopiles with radio frequency identification (RFID) technology. The goal was to consider using the TEG for an active or semi-passive RFID tag. The proposed implementation would allow the communication distance to be increased or even operated without changing batteries. This article discusses the principles of planar thermoelectric microgenerators (μTEGs), focusing on their ability to convert the temperature difference into electrical energy. The concept of integration with active or semi-passive tags is presented, as well as the results of energy efficiency tests, considering various environmental conditions. On the basis of the measurements, the parameters of thermopiles consisting of more thermocouples were simulated to provide the required voltage and power for cooperation with RFID tags. The conclusions of the research indicate promising prospects for the integration of planar thermoelectric microgenerators with RFID technology, opening the way to more sustainable and efficient monitoring and identification systems. Our work provides the theoretical basis and practical experimental data for the further development and implementation of this innovative technology.

Toward Low-Voltage and High-Sensitivity Direct X-ray Detectors Based on Thick Bulk Heterojunction Organic Device

Organic semiconducting materials are promising for the fabrication of flexible ionizing radiation detectors for imaging because of their tissue equivalence, simple large-scale processing, and mass production. However, it is challenging to achieve high-sensitivity detection for organic direct detectors prepared by low-cost solution processing because of the compromise between thickness and carrier transport. In this study, high-performance organic direct X-ray detectors were fabricated by building a micrometer-thick bulk heterojunction (BHJ) using poly(3-hexylthiophene-2,5-diyl) (P3HT):(6,6)-phenyl c71 butyric acid methyl ester. A 5 μm BHJ film was fabricated by drop-casting and enhanced crystallization of P3HT using binary solvents and high-boiling-point additives to improve the charge carrier mobility. Furthermore, this organic direct X-ray detector has a sensitivity of >654.26 μC Gyair s-1 and a self-powered response. Because of the architecture of the thick active layer and the energy cascade in this diode detector, it has a very low dark current of 46.26 pA at -2 V. A fast and efficient approach was developed for fabricating thick, highly mobile organic BHJ films for high-performance direct X-ray detectors. It has great potential for application in a new generation of flexible and portable large-area flat-panel detectors.

Ceramic Stress Sensor Based on Thick Film Piezo-Resistive Ink for Structural Applications

This paper presents a ceramic stress sensor with the dimension of a coin, able to measure the compressive force (stress) applied to its two round faces. The sensor is designed and engineered to be embedded inside concrete or masonry structures, like bridges or buildings. It provides good accuracy, robustness, and simplicity of use at potentially low cost for large-scale applications in civil structures. Moreover, it can be calibrated temperature compensated, and it is inherently hermetic, ensuring the protection of sensitive elements from the external environment. It is, therefore, suitable for operating in harsh and dirty environments like civil constructions. The sensor directly measures the internal stress of the structure, exploiting the piezo resistivity of thick film ink based on ruthenium oxide. It is insensitive with respect to the stiffness of the embedding material and the variation of the surrounding material properties like concrete hardening, shrinkage, and creep as it decouples the two components of stress.

Conformal Fabrication of Thick Film Platinum Strain Gauge Via Error Regulation Strategies for In Situ High-Temperature Strain Detection

Monitoring high-temperature strain on curved components in harsh environments is a challenge for a wide range of applications, including in aircraft engines, gas turbines, and hypersonic vehicles. Although there are significant improvements in the preparation of high-temperature piezoresistive film on planar surfaces using 3D printing methods, there are still difficulties with poor surface compatibility and high-temperature strain testing on curved surfaces. Herein, a conformal direct ink writing (CDIW) system coupled with an error feedback regulation strategy was used to fabricate high-precision, thick films on curved surfaces. This strategy enabled the maximum amount of error in the distance between the needle and the substrate on a curved surface to be regulated from 155 to 4 μm. A conformal Pt thick-film strain gauge (CPTFSG) with a room-temperature strain coefficient of 1.7 was created on a curved metallic substrate for the first time. The resistance drift rate at 800 °C for 1 h was 1.1%, which demonstrated the excellent stability and oxidation resistance of the CPTFSG. High-temperature dynamic strain tests up to 769 °C revealed that the sensor had excellent high-temperature strain test performance. Furthermore, the CPTFSG was conformally deposited on an aero-engine turbine blade to perform in situ tensile and compressive strain testing at room temperature. High-temperature strain tests were conducted at 100 and 200 °C for 600 and 580 με, respectively, demonstrating a high steady-state response consistent with the commercial high-temperature strain transducer. In addition, steady-state strain tests at high temperatures up to 496 °C were tested. The CDIW error modulation strategy provides a highly promising approach for the high-precision fabrication of Pt thick films on complex surfaces and driving in situ sensing of high-temperature parameters on curved components toward practical applications.

Atmospheric Pressure Solvothermal Synthesis of Nanoscale SnO2 and Its Application in Microextrusion Printing of a Thick-Film Chemosensor Material for Effective Ethanol Detection

The atmospheric pressure solvothermal (APS) synthesis of nanocrystalline SnO₂ (average size of coherent scattering regions (CSR)-7.5 ± 0.6 nm) using tin acetylacetonate as a precursor was studied. The resulting nanopowder was used as a functional ink component in microextrusion printing of a tin dioxide thick film on the surface of a Pt/Al₂O₃/Pt chip. Synchronous thermal analysis shows that the resulting semiproduct is transformed completely into tin dioxide nanopowder at 400 °C within 1 h. The SnO₂ powder and the resulting film were shown to have a cassiterite-type structure according to X-ray diffraction analysis, and IR spectroscopy was used to establish the set of functional groups in the material composition. The microstructural features of the tin dioxide powder were analyzed using scanning (SEM) and transmission (TEM) electron microscopy: the average size of the oxide powder particles was 8.2 ± 0.7 nm. Various atomic force microscopy (AFM) techniques were employed to investigate the topography of the oxide film and to build maps of surface capacitance and potential distribution. The temperature dependence of the electrical conductivity of the printed SnO₂ film was studied using impedance spectroscopy. The chemosensory properties of the formed material when detecting H₂, CO, NH₃, C₆H₆, C₃H₆O and C₂H₅OH, including at varying humidity, were also examined. It was demonstrated that the obtained SnO₂ film has an increased sensitivity (the sensory response value was 1.4-63.5) and selectivity for detection of 4-100 ppm C₂H₅OH at an operating temperature of 200 °C.

Study of Internal Stress in Conductive and Dielectric Thick Films

This paper is focused on the study of internal stress in thick films used in hybrid microelectronics. Internal stress in thick films arises after firing and during cooling due to the differing coefficients of thermal expansion in fired film and ceramic substrates. Different thermal expansions cause deflection of the substrate and in extreme cases, the deflection can lead to damage of the substrate. Two silver pastes and two dielectric pastes, as well as their combinations, were used for the experiments, and the internal stress in the thick films was investigated using the cantilever method. Further experiments were also focused on internal stress changes during the experiment and on the influence of heat treatment (annealing) on internal stress. The results were correlated with the morphology of the fired thick films. The internal stress in the thick films was in the range of 8 to 21 MPa for metallic films and in the range from 12 to 16 MPa for dielectric films. It was verified that the cantilever method can be successfully used for the evaluation of internal stress in thick films. It was also found that the values of deflection and internal stress are not stable after firing, and they can change over time, mainly for metallic thick films.

Importance of Electric-Field-Independent Mobilities in Thick-Film Organic Solar Cells

In organic solar cells (OSCs), a thick active layer usually yields a higher photocurrent with broader optical absorption than a thin active layer. In fact, a ∼300 nm thick active layer is more compatible with large-area processing methods and theoretically should be a better spot for efficiency optimization. However, the bottleneck of developing high-efficiency thick-film OSCs is the loss in fill factor (FF). The origin of the FF loss is not clearly understood, and there a direct method to identify photoactive materials for high-efficiency thick-film OSCs is lacking. Here, we demonstrate that the mobility field-dependent coefficient is an important parameter directly determining the FF loss in thick-film OSCs. Simulation results based on the drift-diffusion model reveal that a mobility field-dependent coefficient smaller than 10^-3 (V/cm)^-1/2 is required to maintain a good FF in thick-film devices. To confirm our simulation results, we studied the performance of two ternary bulk heterojunction (BHJ) blends, PTQ10:N3:PC₇₁BM and PM6:N3:PC₇₁BM. We found that the PTQ10 blend film has weaker field-dependent mobilities, giving rise to a more balanced electron-hole transport at low fields. While both the PM6 blend and PTQ10 blend yield good performance in thin-film devices (∼100 nm), only the PTQ10 blend can retain a FF = 74% with an active layer thickness of up to 300 nm. Combining the benefits of a higher J_SC in thick-film devices, we achieved a PCE of 16.8% in a 300 nm thick PTQ10:N3:PC₇₁BM OSC. Such a high FF in the thick-film PTQ10 blend is also consistent with the observation of lower charge recombination from light-intensity-dependent measurements and lower energetic disorder observed in photothermal deflection spectroscopy.

Spray-Coating Thick Films of All-Inorganic Halide Perovskites for Filterless Narrowband Photodetectors

A significant challenge facing perovskite narrowband photodetectors is making high-quality and thick enough films. Here, we report a facile one-step spray-coating approach to deposit cesium lead halide perovskite thick films for filterless narrowband photodetectors, which exhibited a specific detectivity of 2.43 × 10¹⁰ Jones at 655 nm with an fwhm of 25 nm. We demonstrated that both substrate temperature and deposition time during the spray-coating process are key factors that govern the thickness and morphology of perovskite films. The photodetection behavior was dependent on the film thickness, and the narrowband photoresponse was recorded at a 3.9 μm thickness. We discovered that the internal electric field also plays a critical role in determining the narrowband photoresponse behavior. A distinct photoresponse behavior was observed when respectively applying a reverse bias and a forward bias, which is ascribed to the trade-off between the charge-trapping effect and charge extraction under the internal built-in electric field in different biased conditions. Through changing the halogen composition of perovskites from CsPbCl₂Br to CsPbI₂Br, the peak position of the narrowband spectral photoresponse was observed to shift from 460 to 660 nm. This study not only offers a controllable spray-coating approach to develop thick perovskite films but also provides an important guidance for the rational design of filterless narrowband photodetectors for practical applications in industrial control, visual imaging, and biological sensing.

Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates

The realization of a c-axis oriented aluminum nitride thick film on aluminum substrates is a promising step in the development of transducers for applications with a working temperature up to about 600 °C. The present paper deals with the realization of AlN thick films by means of reactive magnetron sputtering with a pulsed DC power supply, operating in continuous mode for 50 h. Two values (0.4 and 0.8) of nitrogen concentration were used; operative pressure and power were set at 0.3 Pa and 150 W, respectively. The thickness of the obtained aluminum nitride films on the aluminum substrate, assessed with a profilometer, varied from 20 to 30 µm. The preferential orientation of AlN crystals was verified by X-ray diffraction. Finally, as the main focus of the investigation, the films underwent electrical characterization by means of an LCR-meter used on a parallel plate capacitor set-up and a test system based on a cantilever beam configuration. AlN conductivity and ε₃₃ permittivity were derived in the 100 Hz–300 kHz frequency range. Magnetron sputtering operation with nitrogen concentration equal to 0.4 resulted in the preferred operative condition, leading to a d₃₁ piezoelectric coefficient, in magnitude, of 0.52 × 10⁻¹² C/N.

Screen Printed Copper and Tantalum Modified Potassium Sodium Niobate Thick Films on Platinized Alumina Substrates

We show how sintering in different atmospheres affects the structural, microstructural, and functional properties of ~30 μm thick films of K_0.5Na_0.5NbO₃ (KNN) modified with 0.38 mol% K_5.4Cu_1.3Ta₁₀O₂₉ and 1 mol% CuO. The films were screen printed on platinized alumina substrates and sintered at 1100 °C in oxygen or in air with or without the packing powder (PP). The films have a preferential crystallographic orientation of the monoclinic perovskite phase in the [100] and [-101] directions. Sintering in the presence of PP contributes to obtaining phase-pure films, which is not the case for the films sintered without any PP notwithstanding the sintering atmosphere. The latter group is characterized by a slightly finer grain size, from 0.1 μm to ~2 μm, and lower porosity, ~6% compared with ~13%. Using piezoresponse force microscopy (PFM) and electron backscatter diffraction (EBSD) analysis of oxygen-sintered films, we found that the perovskite grains are composed of multiple domains which are preferentially oriented. Thick films sintered in oxygen exhibit a piezoelectric d₃₃ coefficient of 64 pm/V and an effective thickness coupling coefficient k_t of 43%, as well as very low mechanical losses of less than 0.5%, making them promising candidates for lead-free piezoelectric energy harvesting applications.

Development of Na0.5CoO2 Thick Film Prepared by Screen-Printing Process

The Na_0.5Co_0.9Cu_0.1O₂ thick film with the same thermoelectric performance as a Na_0.5CoO₂ bulk was formed on an alumina substrate by the screen-printing process. The power factor exceeded 0.3 mW/K²m, with the resistivity of 3.8 mΩcm and the thermopower of 108 μV/K. The thick film without any cracks strongly adhered to the substrate. The high-quality thick film had been realized through the carefully designed and improved process, mixing NaCl to promote the anisotropic sintering of Na_0.5Co_0.9Cu_0.1O₂, inserting a CuO interlayer to adhere the film and substrate, and Co–Cu substituting Cu for Co to control the sintering temperature.

Processing-Friendly Slot-Die-Cast Nonfullerene Organic Solar Cells with Optimized Morphology

The power conversion efficiencies (PCEs) of spin-coated organic solar cells (OSCs) have increased rapidly in recent years. However, spin-coating shows poor reproducibility for large-scale production. Slot-die coating, a lab-scale version of roll-to-roll fabrication, has been considered as the most suitable technique for the production of future large-area commercial devices. For this, the highly efficient slot-die-fabricated devices are required to approach the performance of spin-cast OSCs. We present here, a nonfullerene OSC device utilizing the PBDB-T/i-IEICO-4F blend, fabricated by slot-die coating without post-treatment in the ambient conditions. The device showed an impressive PCE of 12.5%, which is one of the highest reported performance for slot-die-coated OSC devices. Compared to the spin-coated and blade-coated films with optimized thermal annealing time, the films fabricated by slot-die coating (without any treatment) exhibit not only the highest degree of crystallinity and face-on orientation but also the smallest domain size and the purest phase toward enhanced and balanced carrier mobilities. An enhanced excited-state charge generation has been attributed to transient charge kinetics using ultrafast spectroscopic signatures. The optimized slot-die-coated devices exhibit excellent tolerance for the increased thickness of the photoactive layer, attributing to favorable molecular packing. We used slot-die coating as a simple fabrication technique, which is capable of yielding highly efficient OSCs.

Alloyed Thermoelectric PbTe-SnTe Films Formed via Aerosol Deposition

The discovery of new thermoelectric materials has the potential to benefit from advances in high-throughput methodologies. Traditional synthesis and characterization routes for thermoelectrics are time-consuming serial processes. In contrast, high-throughput materials discovery is commonly done by thin film growth, which may produce microstructures that are metastable or compositionally graded and, therefore, are challenging to characterize. As a middle ground between bulk synthesis and thin film deposition, we find that the aerosol deposition process can rapidly produce samples that exhibit electronic property trends consistent with those produced by traditional bulk means. We demonstrate rapid growth of discrete thermoelectric thick films of varying chemical compositions (Pb_1-xSn_xTe) from PbTe and SnTe polydisperse micrometer sized powder feedstocks. The high deposition rate (near 1 μm min^-1) and resultant microstructures are advantageous as the diffusion length scales promote rapid thermal treatment and equilibrium phase formation. Room-temperature high-throughput measurements of the Seebeck coefficient and resistivity are compared to traditionally produced bulk materials. The Seebeck coefficient of the films follows the trends of traditional samples, but the resistivity is found to be more sensitive to microstructural effects. Ultimately, we demonstrate a framework for exploratory materials science using aerosol deposition and high-throughput characterization instrumentation.

Large-Area Organic Solar Cells: Material Requirements, Modular Designs, and Printing Methods

The printing of large-area organic solar cells (OSCs) has become a frontier for organic electronics and is also regarded as a critical step in their industrial applications. With the rapid progress in the field of OSCs, the highest power conversion efficiency (PCE) for small-area devices is approaching 15%, whereas the PCE for large-area devices has also surpassed 10% in a single cell with an area of ≈1 cm² . Here, the progress of this fast developing area is reviewed, mainly focusing on: 1) material requirements (materials that are able to form efficient thick active layer films for large-area printing); 2) modular designs (effective designs that can suppress electrical, geometric, optical, and additional losses, leading to a reduction in the PCE of the devices, as a consequence of substrate area expansion); and 3) printing methods (various scalable fabrication techniques that are employed for large-area fabrication, including knife coating, slot-die coating, screen printing, inkjet printing, gravure printing, flexographic printing, pad printing, and brush coating). By combining thick-film material systems with efficient modular designs exhibiting low-efficiency losses and employing the right printing methods, the fabrication of large-area OSCs will be successfully realized in the near future.

Modelling of the Temperature Difference Sensors to Control the Temperature Distribution in Processor Heat Sink

This paper has three main purposes. The first is to investigate whether it is appropriate to use a planar thick-film thermoelectric sensor to monitor the temperature difference in a processor heat sink. The second is to compare the efficiency of two heat sink models. The third is to compare two kinds of sensors, differing in length. The model of the CPU heat sink sensor system was designed for numerical simulations. The relations between the CPU, heat sink, and the thermoelectric sensor were modelled because they are important for increasing the efficiency of fast processors without interfering with their internal structure. The heat sink was mounted on the top of the thermal model of a CPU (9.6 W). The plate fin and pin fin heat sinks were investigated. Two planar thermoelectric sensors were mounted parallel to the heat sink fins. These sensors monitored changes in the temperature difference between the CPU and the upper surface of the heat sink. The system was equipped with a cooling fan. Switching on the fan changed the thermal conditions (free or forced convection). The simulation results showed the temperature gradient appearing along the sensor for different heat sinks and under different thermal conditions. Comparison of the results obtained in the simulations of the CPU heat sink sensor systems proves that changes in the cooling conditions can cause a strong, step change in the response of the thermoelectric sensor. The results suggest that usage of the pin fin heat sink model is a better solution for free convection conditions. In the case of strong forced convection the heat sink type ceases to be significant.

Controlling Molecular Packing and Orientation via Constructing a Ladder-Type Electron Acceptor with Asymmetric Substituents for Thick-Film Nonfullerene Solar Cells

A nonfullerene acceptor, IDTT-OB, employing indacenodithieno[3,2- b]thiophene (IDTT) decorated with asymmetric substituents as the core, is designedly prepared. In comparison with the analogue IDT-OB, extending the five-heterocyclic indacenodithiophene (IDT) core to seven-heterocyclic fused ring endows IDTT-OB with more broad absorption and elevated highest occupied molecular orbital energy level. In addition, IDTT-OB shows a more intense molecular packing and a higher crystalline behavior with a strong face-on orientation in the neat film and the PBDB-T:IDTT-OB blend film. Furthermore, an ideal nanomorphology with a domain size of 19 nm can be obtained, which is in favor of exciton diffusion and charge separation. Accordingly, PBDB-T:IDTT-OB-based polymer solar cells demonstrate a maximum power conversion efficiency (PCE_max) of 11.19% with an impressive fill factor of 0.74, comparable to the state-of-the-art acceptors with similar molecular backbones. More importantly, IDTT-OB-based devices show good tolerance to the film thickness, which maintain a high PCE of 10.20% with a 250 nm thick active layer, demonstrating that the asymmetric acceptor is profound for fabricating high-efficiency thick-film nonfullerene solar cells.

PZT/PZT and PZT/BiT Composite Piezo-Sensors in Aerospace SHM Applications: Photochemical Metal Organic + Infiltration Deposition and Characterization

The composition of fine-ground lead zirconate-titanate powder Pb(Zr_0.52Ti_0.48)O₃, suspended in PZT and bismuth titanate (BiT) solutions, is deposited on the curved surface of IN718 and IN738 nickel-based supper alloy substrates up to 100 µm thickness. Photochemical metal organic and infiltration techniques are implemented to produce smooth, semi-dense, and crack-free random orientated thick piezoelectric films as piezo-sensors, free of any dopants or thickening polymers. Every single layer of the deposited films is heated at 200 °C with 10 wt.% excess PbO, irradiated by ultraviolet lamp (365 nm, 6 watt) for 10 min, pyrolyzed at 400 °C, and subsequently annealed at 700 °C for one hour. This process is repeated successively until reaching the desired thickness. Au and Pt thin films are deposited as the bottom and top electrodes using evaporation and sputtering methods, respectively. PZT/PZT and PZT/BiT composite films are then characterized and compared to similar PZT and BiT thick films deposited on the similar substrates. The effect of the composition and deposition process is also investigated on the crystalline phase development and microstructure morphology as well as the dielectric, ferroelectric, and piezoelectric properties of piezo-films. The maximum remnant polarization of P_r = 22.37 ± 0.01, 30.01 ± 0.01 µC/cm², the permittivity of ε_r = 298 ± 3, 566 ± 5, and piezoelectric charge coefficient of d₃₃ = 126, 148 m/V were measured versus the minimum coercive field of E_c = 50, 20 kV/cm for the PZT/PZT and PZT/BiT thick films, respectively. The thick film piezo-sensors are developed to be potentially used at frequency bandwidth of 1⁻5 MHz for rotary structural health monitoring and also in other industrial or medical applications as a transceiver.

Boosting the Recoverable Energy Density of Lead-Free Ferroelectric Ceramic Thick Films through Artificially Induced Quasi-Relaxor Behavior

Dielectric ceramic film capacitors, which store energy in the form of electric polarization, are promising for miniature pulsed power electronic device applications. For a superior energy storage performance of the capacitors, large recoverable energy density, along with high efficiency, high power density, fast charge/discharge rate, and good thermal/fatigue stability, is desired. Herein, we present highly dense lead-free 0.942[Na_0.535K_0.480NbO₃]-0.058LiNbO₃ (KNNLN) ferroelectric ceramic thick films (∼5 μm) demonstrating remarkable energy storage performance. The nanocrystalline KNNLN thick film fabricated by aerosol deposition (AD) process and annealed at 600 °C displayed a quasi-relaxor ferroelectric behavior, which is in contrast to the typical ferroelectric nature of the KNNLN ceramic in its bulk form. The AD film exhibited a large recoverable energy density of 23.4 J/cm³, with an efficiency of over 70% under the electric field of 1400 kV/cm. Besides, an ultrahigh power density of 38.8 MW/cm³ together with a fast discharge speed of 0.45 μs, good fatigue endurance (up to 10⁶ cycles), and thermal stability in a wide temperature range of 20-160 °C was also observed. Using the AD process, we could make a highly dense microstructure of the film containing nano-sized grains, which gave rise to the quasi-relaxor ferroelectric characteristics and the remarkable energy storage properties.

A Room Temperature H₂ Sensor Fabricated Using High Performance Pt-Loaded SnO₂ Nanoparticles

Highly sensitive H₂ gas sensors were prepared using pure and Pt-loaded SnO₂ nanoparticles. Thick film sensors (~35 μm) were fabricated that showed a highly porous interconnected structure made of high density small grained nanoparticles. Using Pt as catalyst improved sensor response and reduced the operating temperature for achieving high sensitivity because of the negative temperature coefficient observed in Pt-loaded SnO₂. The highest sensor response to 1000 ppm H₂ was 10,500 at room temperature with a response time of 20 s. The morphology of the SnO₂ nanoparticles, the surface loading concentration and dispersion of the Pt catalyst and the microstructure of the sensing layer all play a key role in the development of an effective gas sensing device.

Development of lead-free single-element ultrahigh frequency (170-320MHz) ultrasonic transducers

This paper presents the design, fabrication and characterization of single-element ultrahigh frequency (UHF) ultrasonic transducers in which the center frequency ranged from 170 to 320MHz. The center frequency of >300MHz is the highest value of lead-free ceramic ultrasonic transducers ever reported. With concern in the environmental pollution of lead-based materials, the transducer elements presented in this work were lead-free K0.5Na0.5NbO3/Bi0.5Na0.5TiO3 (KNN/BNT) composite thick films. All transducers were evaluated in a pulse-echo arrangement. The measured -6dB bandwidth of the transducers ranged from 35% to 64%. With the optimized piezoelectric properties of the composite film, the insertion loss of the UHF transducers was measured and determined to range from -50 to -60dB. In addition to the pulse-echo measurement, a 6μm tungsten wire phantom was also imaged with a 205MHz transducer to demonstrate the imaging capability. The measured -6dB axial and lateral resolutions were found to be 12μm and 50μm, respectively. The transducer performance presented in this work is shown to be better or comparable to previously reported results even though the frequency is much higher.

Lift-off PMN-PT Thick Film for High Frequency Ultrasonic Biomicroscopy

Piezoelectric 0.65Pb(Mg(1/3)Nb(2/3))O(3)-0.35PbTiO(3) (PMN-35PT) thick film with a thickness of approximately 12 µm has been deposited on the platinum buffered Si substrate via a sol-gel composite method. The separation of the film from the substrate was achieved using a wet chemical method. The lifted-off PMN-35PT thick film exhibited good dielectric and ferroelectric properties. At 1 kHz, the dielectric constant and the dielectric loss were 3,326 and 0.037, respectively, while the remnant polarization was 30.0 µC/cm(2). A high frequency single element acoustic transducer fabricated with this film showed a bandwidth at -6 dB of 63.6% at 110 MHz.

Characterization of mixed xWO3(1-x)Y2O3 nanoparticle thick film for gas sensing application

Microstructural, topology, inner morphology, and gas-sensitivity of mixed xWO₃(1-x)Y₂O₃ nanoparticles (x = 1, 0.95, 0.9, 0.85, 0.8) thick-film semiconductor gas sensors were studied. The surface topography and inner morphological properties of the mixed powder and sensing film were characterized with X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). Also, gas sensitivity properties of the printed films were evaluated in the presence of methane (CH₄) and butane (C₄H₁₀) at up to 500 °C operating temperature of the sensor. The results show that the doping agent can modify some structural properties and gas sensitivity of the mixed powder.