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Sha H, Song Y, Chen Y, Liu J, Shi M, Wu Z, Zhang H, Qin L, Liang L, Jia P, Qiu C, Lei Y, Wang Y, Ning Y, Miao G, Zhang J, Wang L. Advances in Semiconductor Lasers Based on Parity-Time Symmetry. Nanomaterials (Basel) 2024; 14:571. [PMID: 38607106 PMCID: PMC11013715 DOI: 10.3390/nano14070571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Revised: 03/22/2024] [Accepted: 03/23/2024] [Indexed: 04/13/2024]
Abstract
Semiconductor lasers, characterized by their high efficiency, small size, low weight, rich wavelength options, and direct electrical drive, have found widespread application in many fields, including military defense, medical aesthetics, industrial processing, and aerospace. The mode characteristics of lasers directly affect their output performance, including output power, beam quality, and spectral linewidth. Therefore, semiconductor lasers with high output power and beam quality are at the forefront of international research in semiconductor laser science. The novel parity-time (PT) symmetry mode-control method provides the ability to selectively modulate longitudinal modes to improve the spectral characteristics of lasers. Recently, it has gathered much attention for transverse modulation, enabling the output of fundamental transverse modes and improving the beam quality of lasers. This study begins with the basic principles of PT symmetry and provides a detailed introduction to the technical solutions and recent developments in single-mode semiconductor lasers based on PT symmetry. We categorize the different modulation methods, analyze their structures, and highlight their performance characteristics. Finally, this paper summarizes the research progress in PT-symmetric lasers and provides prospects for future development.
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Affiliation(s)
- Hongbo Sha
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yue Song
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongyi Chen
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
- Jlight Semiconductor Technology Co., Ltd., Changchun 130033, China
| | - Jishun Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mengjie Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zibo Wu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hao Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Li Qin
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Liang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peng Jia
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Cheng Qiu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuxin Lei
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yubing Wang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongqiang Ning
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guoqing Miao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jinlong Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lijun Wang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China
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Deng C, Ye L, He C, Xu G, Zhai Q, Luo H, Liu Y, Bell AJ. Reporting Excellent Transverse Piezoelectric and Electro-Optic Effects in Transparent Rhombohedral PMN-PT Single Crystal by Engineered Domains. Adv Mater 2021; 33:e2103013. [PMID: 34510568 DOI: 10.1002/adma.202103013] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2021] [Revised: 07/17/2021] [Indexed: 06/13/2023]
Abstract
Transparent ferroelectric crystals with high piezoelectricity are challenging to build because of their complex structure and disordered domains in rhombohedral relaxor ferroelectrics. There are eight domains along the <111> direction, which cause light scattering. In this study, perfect transparency is achieved along the [110] and [001] directions in [110]-poled rhombohedral 0.72Pb(Mg1/3 Nb2/3 )O3 -0.28PbTiO3 (PMN-PT) crystals, which have a high d31 value of 1700 pC N-1 and a high electro-optic coefficient γ33 of 320 pm V-1 . This implies that the [110]-oriented rhombohedral PMN-0.28PT crystal can realize the mode of transverse modulation, whereas the [001]-oriented PMN-0.28PT crystal is more suitable for the longitudinal mode. Through piezoresponse force microscopy (PFM), it is confirmed that the [110]-poled rhombohedral PMN-PT crystals form 71° layered domains, which are similar to the 109° layered domains of the [001]-oriented transparent crystal. Combined with PFM and birefringence microscopy, the degradation of domains and thickness dependence of piezoelectricity provide clear evidence for the relationship between the engineered domain structures and piezoelectric properties, which should be considered in the design of piezoelectric or electro-optic devices with excellent performance. This work enriches the research on ferroelectric domain engineering for excellent transparency and high piezoelectricity to provide new ideas for photoacoustic devices.
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Affiliation(s)
- Chenguang Deng
- College of Science, Nanjing University of Aeronautics and Astronautics, 29 Jiangjun Road, Nanjing, 211106, China
| | - Lianxu Ye
- College of Science, Nanjing University of Aeronautics and Astronautics, 29 Jiangjun Road, Nanjing, 211106, China
| | - Chongjun He
- Key Laboratory of Space Photoelectric Detection and Perception in Ministry of Industry and Information Technology, College of Astronautics, Nanjing University of Aeronautics and Astronautics, 29 Jiangjun Road, Nanjing, 211106, China
- State Key Laboratory of Crystal Materials, Shandong University, 27 Shanda South Road, Jinan, 250100, China
| | - Guisheng Xu
- R&D Center of Synthetic Crystals, Chinese Academy of Sciences Shanghai Institute of Ceramics, 585 Heshuo Road 585, Shanghai, 201899, China
| | - Qinxiao Zhai
- Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444, China
| | - Haosu Luo
- R&D Center of Synthetic Crystals, Chinese Academy of Sciences Shanghai Institute of Ceramics, 585 Heshuo Road 585, Shanghai, 201899, China
| | - Youwen Liu
- College of Science, Nanjing University of Aeronautics and Astronautics, 29 Jiangjun Road, Nanjing, 211106, China
| | - Andrew J Bell
- School of Chemical and Process Engineering, University of Leeds, Leeds, LS2 9JT, UK
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