Organic multilevel (opto)electronic memories towards neuromorphic applications

In the past decades, neuromorphic computing has attracted the interest of the scientific community due to its potential to circumvent the von Neumann bottleneck. Organic materials, owing to their fine tunablility and their ability to be used in multilevel memories, represent a promising class of materials to fabricate neuromorphic devices with the key requirement of operation with synaptic weight. In this review, recent studies of organic multilevel memory are presented. The operating principles and the latest achievements obtained with devices exploiting the main approaches to reach multilevel operation are discussed, with emphasis on organic devices using floating gates, ferroelectric materials, polymer electrets and photochromic molecules. The latest results obtained using organic multilevel memories for neuromorphic circuits are explored and the major advantages and drawbacks of the use of organic materials for neuromorphic applications are discussed.

Organic thermoelectric generators: working principles, materials, and fabrication techniques

Organic thermoelectricity is a blooming field of research that employs organic (semi)conductors to recycle waste heat through its partial conversion to electrical power. Such a conversion occurs by means of organic thermoelectric generator (OTEG) devices. The recent process on the synthesis of novel materials and on the understanding of doping mechanisms to increase conductivity has tremendously narrowed the gap between laboratory research and their application in actual applications. This Feature Article intends to highlight the impressive progress in materials and fabrication techniques for OTEGs made in recent years.

Non-invasive digital etching of van der Waals semiconductors

The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here we report a protocol that allows for non-invasive and atomically digital etching of van der Waals transition-metal dichalcogenides through selective alloying via low-temperature thermal diffusion and subsequent wet etching. The mechanism of selective alloying between sacrifice metal atoms and defective or pristine dichalcogenides is analyzed with high-resolution scanning transmission electron microscopy. Also, the non-invasive nature and atomic level precision of our etching technique are corroborated by consistent spectral, crystallographic, and electrical characterization measurements. The low-temperature charge mobility of as-etched MoS₂ reaches up to 1200 cm² V⁻¹s⁻¹, comparable to that of exfoliated pristine counterparts. The entire protocol represents a highly precise and non-invasive tailoring route for material manipulation.

Here, the authors exploit a non-invasive layer-bylayer etching technique to fabricate electronic devices based on 2D transition metal dichalcogenides with controlled thickness and transport properties comparable to those of exfoliated flakes.

Effect of Extrinsic Disorder on the Magnetoresistance Response of Gated Single-Layer Graphene Devices

Analogous to the case of classical metal oxide semiconductor field-effect transistors, transport properties of graphene-based devices are determined by scattering from adventitious charged impurities that are invariably present. The presence of charged impurities renders experimental graphene samples "extrinsic" in that their electrical performances also depend on the environment in which graphene operates. While the role of such an extrinsic disorder component has been studied for conventional charge transport in graphene, its impact on the magnetotransport remains unexplored. Here, we show that single-layer graphene transistors with a low density of extrinsic disorder feature a larger magnetoresistance (MR) than those with a high density. Importantly, in gated single-layer devices with a low density of charged impurities, we find that MR peaks at gate voltage values far from the charge neutrality point not only at a low temperature but also at room temperature; in particular, MR approaches 800% at room temperature and 1400% at 50 K in such devices. In addition, dynamic measurements of MR on devices with a low degree of extrinsic disorder lead to stable and reliable single-layer graphene magnetosensors endowed with an ultralow power consumption of 2.5 nW. Our work indicates that the initial value of the minimum conductivity σ₀ at room temperature along with carrier mobility must be looked at to select the most promising devices for magnetosensing.

Multiresponsive Nonvolatile Memories Based on Optically Switchable Ferroelectric Organic Field-Effect Transistors

Organic transistors are key elements for flexible, wearable, and biocompatible logic applications. Multiresponsivity is highly sought-after in organic electronics to enable sophisticated operations and functions. Such a challenge can be pursued by integrating more components in a single device, each one responding to a specific external stimulus. Here, the first multiresponsive organic device based on a photochromic-ferroelectric organic field-effect transistor, which is capable of operating as nonvolatile memory with 11 bit memory storage capacity in a single device, is reported. The memory elements can be written and erased independently by means of light or an electric field, with accurate control over the readout signal, excellent repeatability, fast response, and high retention time. Such a proof of concept paves the way toward enhanced functional complexity in optoelectronics via the interfacing of multiple components in a single device, in a fully integrated low-cost technology compatible with flexible substrates.

Analysis of External and Internal Disorder to Understand Band-Like Transport in n-Type Organic Semiconductors

Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e., related to interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (<a-few-hundred cm^-1 ), which makes it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be external, being controlled by the gate insulator dielectric properties. Here a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory, and simulations is reported. Unambiguous evidence that ad hoc molecular design enables the electron charge carriers to be freed from both internal and external disorder to ultimately reach band-like electron transport is provided.

Surface-Confined Macrocyclization via Dynamic Covalent Chemistry

Surface-confined synthesis is a promising approach to build complex molecular nanostructures including macrocycles. However, despite the recent advances in on-surface macrocyclization under ultrahigh vacuum, selective synthesis of monodisperse and multicomponent macrocycles remains a challenge. Here, we report on an on-surface formation of [6 + 6] Schiff-base macrocycles via dynamic covalent chemistry. The macrocycles form two-dimensional crystalline domains on the micrometer scale, enabled by dynamic conversion of open-chain oligomers into well-defined ∼3.0 nm hexagonal macrocycles. We further show that by tailoring the length of the alkyl substituents, it is possible to control which of three possible products-oligomers, macrocycles, or polymers-will form at the surface. In situ scanning tunneling microscopy imaging combined with density functional theory calculations and molecular dynamics simulations unravel the synergistic effect of surface confinement and solvent in leading to preferential on-surface macrocyclization.

Organic-based inverters: basic concepts, materials, novel architectures and applications

The review article covers the materials and techniques employed to fabricate organic-based inverter circuits and highlights their novel architectures, ground-breaking performances and potential applications.

Boosting and Balancing Electron and Hole Mobility in Single- and Bilayer WSe2 Devices via Tailored Molecular Functionalization

WSe₂ is a layered ambipolar semiconductor enabling hole and electron transport, which renders it a suitable active component for logic circuitry. However, solid-state devices based on single- and bilayer WSe₂ typically exhibit unipolar transport and poor electrical performance when conventional SiO₂ dielectric and Au electrodes are used. Here, we show that silane-containing functional molecules form ordered monolayers on the top of the WSe₂ surface, thereby boosting its electrical performance in single- and bilayer field-effect transistors. In particular, by employing SiO₂ dielectric substrates and top Au electrodes, we measure unipolar mobility as high as μ_h = 150 cm² V^-1 s^-1 and μ_e = 17.9 cm² V^-1 s^-1 in WSe₂ single-layer devices when ad hoc molecular monolayers are chosen. Additionally, by asymmetric double-side functionalization with two different molecules, we provide opposite polarity to the top and bottom layer of bilayer WSe₂, demonstrating nearly balanced ambipolarity at the bilayer limit. Our results indicate that the controlled functionalization of the two sides of the WSe₂ mono- and bilayer flakes with highly ordered molecular monolayers offers the possibility to simultaneously achieve energy level engineering and defect functionalization, representing a path toward deterministic control over charge transport in 2D materials.

Unconventional Nanofabrication for Supramolecular Electronics

The scientific effort toward achieving a full control over the correlation between structure and function in organic and polymer electronics has prompted the use of supramolecular interactions to drive the formation of highly ordered functional assemblies, which have been integrated into real devices. In the resulting field of supramolecular electronics, self-assembly of organic semiconducting materials constitutes a powerful tool to generate low-dimensional and crystalline functional architectures. These include 1D nanostructures (nanoribbons, nanotubes, and nanowires) and 2D molecular crystals with tuneable and unique optical, electronic, and mechanical properties. Optimizing the (opto)electronic properties of organic semiconducting materials is imperative to harness such supramolecular structures as active components for supramolecular electronics. However, their integration in real devices currently represents a significant challenge to the advancement of (opto)electronics. Here, an overview of the unconventional nanofabrication techniques and device configurations to enable supramolecular electronics to become a real technology is provided. A particular focus is put on how single and multiple supramolecular fibers and gels as well as supramolecularly engineered 2D materials can be integrated into novel vertical or horizontal junctions to realize flexible and high-density multifunctional transistors, photodetectors, and memristors, exhibiting a set of new properties and excelling in their performances.

Nano-Subsidence-Assisted Precise Integration of Patterned Two-Dimensional Materials for High-Performance Photodetector Arrays

The spatially precise integration of arrays of micropatterned two-dimensional (2D) crystals onto three-dimensionally structured Si/SiO₂ substrates represents an attractive, low-cost system-on-chip strategy toward the realization of extended functions in silicon microelectronics. However, the reliable integration of such atomically thin arrays on planar patterned surfaces has proven challenging due to their poor adhesion to underlying substrates, as ruled by weak van der Waals interactions. Here, we report on an integration method utilizing the flexibility of the atomically thin crystals and their physical subsidence in liquids, which enables the reliable fabrication of the micropatterned 2D materials/Si arrays. Our photodiode devices display peak sensitivity as high as 0.35 A/W and external quantum efficiency (EQE) of ∼90%. The nano-subsidence technique represents a viable path to on-chip integration of 2D crystals onto silicon for advanced microelectronics.

Current crowding issues on nanoscale planar organic transistors for spintronic applications

The predominance of interface resistance makes current crowding ubiquitous in short channel organic electronics devices but its impact on spin transport has never been considered. We investigate electrochemically doped nanoscale PBTTT short channel devices and observe the smallest reported values of crowding lengths, found for sub-100 nm electrodes separation. These observed values are nevertheless exceeding the spin diffusion lengths reported in the literature. We discuss here how current crowding can be taken into account in the framework of the Fert-Jaffrès model of spin current propagation in heterostructures, and predict that the anticipated resulting values of magnetoresistance can be significantly reduced. Current crowding therefore impacts spin transport applications and interpretation of the results on spin valve devices.

Self-Suspended Nanomesh Scaffold for Ultrafast Flexible Photodetectors Based on Organic Semiconducting Crystals

Self-standing nanostructures are of fundamental interest in materials science and nanoscience and are widely used in (opto-)electronic and photonic devices as well as in micro-electromechanical systems. To date, large-area and self-standing nanoelectrode arrays assembled on flexible substrates have not been reported. Here the fabrication of a hollow nanomesh scaffold on glass and plastic substrates with a large surface area over 1 mm² and ultralow leakage current density (≈1-10 pA mm^-2 @ 2 V) across the empty scaffold is demonstrated. Thanks to the continuous sub-micrometer space formed in between the nanomesh and the bottom electrode, highly crystalline and dendritic domains of 6,13-bis(triisopropylsilylethinyl)pentacene growing within the hollow cavity can be observed. The high degree of order at the supramolecular level leads to efficient charge and exciton transport; the photovoltaic detector supported on flexible polyethylene terephthalate substrates exhibits an ultrafast photoresponse time as short as 8 ns and a signal-to-noise ratio approaching 10⁵ . Such a hollow scaffold holds great potential as a novel device architecture toward flexible (opto-)electronic applications based on self-assembled micro/nanocrystals.

When 2D Materials Meet Molecules: Opportunities and Challenges of Hybrid Organic/Inorganic van der Waals Heterostructures

van der Waals heterostructures, composed of vertically stacked inorganic 2D materials, represent an ideal platform to demonstrate novel device architectures and to fabricate on-demand materials. The incorporation of organic molecules within these systems holds an immense potential, since, while nature offers a finite number of 2D materials, an almost unlimited variety of molecules can be designed and synthesized with predictable functionalities. The possibilities offered by systems in which continuous molecular layers are interfaced with inorganic 2D materials to form hybrid organic/inorganic van der Waals heterostructures are emphasized. Similar to their inorganic counterpart, the hybrid structures have been exploited to put forward novel device architectures, such as antiambipolar transistors and barristors. Moreover, specific molecular groups can be employed to modify intrinsic properties and confer new capabilities to 2D materials. In particular, it is highlighted how molecular self-assembly at the surface of 2D materials can be mastered to achieve precise control over position and density of (molecular) functional groups, paving the way for a new class of hybrid functional materials whose final properties can be selected by careful molecular design.

Reversible, Fast, and Wide-Range Oxygen Sensor Based on Nanostructured Organometal Halide Perovskite

Nanostructured materials characterized by high surface-volume ratio hold the promise to constitute the active materials for next-generation sensors. Solution-processed hybrid organohalide perovskites, which have been extensively used in the last few years for optoelectronic applications, are characterized by a self-assembled nanostructured morphology, which makes them an ideal candidate for gas sensing. Hitherto, detailed studies of the dependence of their electrical characteristics on the environmental atmosphere have not been performed, and even the effect of a ubiquitous gas such as O₂ has been widely overlooked. Here, the electrical response of organohalide perovskites to oxygen is studied. Surprisingly, a colossal increase (3000-fold) in the resistance of perovskite-based lateral devices is found when measured in a full oxygen atmosphere, which is ascribed to a trap healing mechanism originating from an O₂ -mediated iodine vacancies filling. A variation as small as 70 ppm in the oxygen concentration can be detected. The effect is fast (<400 ms) and fully reversible, making organohalide perovskites ideal active materials for oxygen sensing. The effect of oxygen on the electrical characteristics of organohalide perovskites must be taken into deep consideration for the design and optimization of any other perovskite-based (opto-) electronic device working in ambient conditions.

Generation of Low-Dimensional Architectures through the Self-Assembly of Pyromellitic Diimide Derivatives

Small π-conjugated molecules can be designed and synthesized to undergo controlled self-assembly forming low-dimensional architectures, with programmed order at the supramolecular level. Such order is of paramount importance because it defines the property of the obtained material. Here, we have focused our attention to four pyromellitic diimide derivatives exposing different types of side chains. The joint effect of different noncovalent interactions including π-π stacking, H-bonding, and van der Waals forces on the four derivatives yielded different self-assembled architectures. Atomic force microscopy studies, corroborated with infrared and nuclear magnetic resonance spectroscopic measurements, provided complementary multiscale insight into these assemblies.

Periodic potentials in hybrid van der Waals heterostructures formed by supramolecular lattices on graphene

The rise of 2D materials made it possible to form heterostructures held together by weak interplanar van der Waals interactions. Within such van der Waals heterostructures, the occurrence of 2D periodic potentials significantly modifies the electronic structure of single sheets within the stack, therefore modulating the material properties. However, these periodic potentials are determined by the mechanical alignment of adjacent 2D materials, which is cumbersome and time-consuming. Here we show that programmable 1D periodic potentials extending over areas exceeding 104 nm2 and stable at ambient conditions arise when graphene is covered by a self-assembled supramolecular lattice. The amplitude and sign of the potential can be modified without altering its periodicity by employing photoreactive molecules or their reaction products. In this regard, the supramolecular lattice/graphene bilayer represents the hybrid analogue of fully inorganic van der Waals heterostructures, highlighting the rich prospects that molecular design offers to create ad hoc materials.

Fast-Response Photonic Device Based on Organic-Crystal Heterojunctions Assembled into a Vertical-Yet-Open Asymmetric Architecture

Crystalline dioctyl-3,4,9,10-perylenedicarboximide nanowires and 6,13-bis(triisopropylsilylethynyl) pentacene microplates are integrated into a vertical-yet-open asymmetrical heterojunction for the realization of a high-performance organic photovoltaic detector, which shows fast photoresponse, ultrahigh signal-to-noise ratio, and high sensitivity to weak light.

High, Anisotropic, and Substrate-Independent Mobility in Polymer Field-Effect Transistors Based on Preassembled Semiconducting Nanofibrils

Achieving nanoscale control over the crystalline structure and morphology of electroactive polymer films and the possibility to transfer them onto any solid substrate are important tasks for the fabrication of high-performance organic/polymeric field-effect transistors (FETs). In this work, we demonstrate that ultrathin active layers preassembled at the water/air interface can possess high, anisotropic, and substrate-independent mobility in polymer FETs. By exploiting a modified approach to the Langmuir-Schaeffer technique, we self-assemble conjugated polymers in fibrillar structures possessing controlled thickness, nanoscale structure, and morphology; these highly ordered nanofibrils can be transferred unaltered onto any arbitrary substrate. We show that FETs based on these films possess high and anisotropic hole mobility approaching 1 cm² V^-1 s^-1 along the nanofibrils, being over 1 order of magnitude beyond the state-of-the-art for Langmuir-Schaefer polymer FETs. Significantly, we demonstrate that the FET performances are independent of the chemical nature and dielectric permittivity of the substrate, overcoming a critical limit in the field of polymer FETs. Our method allows the fabrication of ultrathin films for low-cost, high-performance, transparent, and flexible devices supported on any dielectric substrate.

A nanomesh scaffold for supramolecular nanowire optoelectronic devices

Supramolecular organic nanowires are ideal nanostructures for optoelectronics because they exhibit both efficient exciton generation as a result of their high absorption coefficient and remarkable light sensitivity due to the low number of grain boundaries and high surface-to-volume ratio. To harvest photocurrent directly from supramolecular nanowires it is necessary to wire them up with nanoelectrodes that possess different work functions. However, devising strategies that can connect multiple nanowires at the same time has been challenging. Here, we report a general approach to simultaneously integrate hundreds of supramolecular nanowires of N,N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) in a hexagonal nanomesh scaffold with asymmetric nanoelectrodes. Optimized PTCDI-C8 nanowire photovoltaic devices exhibit a signal-to-noise ratio approaching 10⁷, a photoresponse time as fast as 10 ns and an external quantum efficiency >55%. This nanomesh scaffold can also be used to investigate the fundamental mechanism of photoelectrical conversion in other low-dimensional semiconducting nanostructures.

Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logic circuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organic memories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well as the number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-film transistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromic diarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bit storage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses. We also report robustness over 70 write-erase cycles and non-volatility exceeding 500 days. The device was implemented on a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics and smart nanodevices.

Light-Modulation of the Charge Injection in a Polymer Thin-Film Transistor by Functionalizing the Electrodes with Bistable Photochromic Self-Assembled Monolayers

High fatigue resistance, bistability, and drastic property changes among isomers allow efficient modulation of the current output of organic thin-film transistors (OTFTs) to be obtained by a photogating of the charge-injection mechanism.

Electrochemical Functionalization of Graphene at the Nanoscale with Self-Assembling Diazonium Salts

We describe a fast and versatile method to functionalize high-quality graphene with organic molecules by exploiting the synergistic effect of supramolecular and covalent chemistry. With this goal, we designed and synthesized molecules comprising a long aliphatic chain and an aryl diazonium salt. Thanks to the long chain, these molecules physisorb from solution onto CVD graphene or bulk graphite, self-assembling in an ordered monolayer. The sample is successively transferred into an aqueous electrolyte, to block any reorganization or desorption of the monolayer. An electrochemical impulse is used to transform the diazonium group into a radical capable of grafting covalently to the substrate and transforming the physisorption into a covalent chemisorption. During covalent grafting in water, the molecules retain the ordered packing formed upon self-assembly. Our two-step approach is characterized by the independent control over the processes of immobilization of molecules on the substrate and their covalent tethering, enabling fast (t < 10 s) covalent functionalization of graphene. This strategy is highly versatile and works with many carbon-based materials including graphene deposited on silicon, plastic, and quartz as well as highly oriented pyrolytic graphite.

Coherent Coupling of WS2 Monolayers with Metallic Photonic Nanostructures at Room Temperature

Room temperature strong coupling of WS2 monolayer exciton transitions to metallic Fabry-Pérot and plasmonic optical cavities is demonstrated. A Rabi splitting of 101 meV is observed for the Fabry-Pérot cavity. The enhanced magnitude and visibility of WS2 monolayer strong coupling is attributed to the larger absorption coefficient, the narrower line width of the A exciton transition, and greater spin-orbit coupling. For WS2 coupled to plasmonic arrays, the Rabi splitting still reaches 60 meV despite the less favorable coupling conditions, and displays interesting photoluminescence features. The unambiguous signature of WS2 monolayer strong coupling in easily fabricated metallic resonators at room temperature suggests many possibilities for combining light-matter hybridization with spin and valleytronics.

High-Performance Phototransistors Based on PDIF-CN2 Solution-Processed Single Fiber and Multifiber Assembly

Here we describe the fabrication of organic phototransistors based on either single or multifibers integrated in three-terminal devices. These self-assembled fibers have been produced by solvent-induced precipitation of an air stable and solution-processable perylene di-imide derivative, i.e., PDIF-CN2. The optoelectronic properties of these devices were compared to devices incorporating more disordered spin-coated PDIF-CN2 thin-films. The single-fiber devices revealed significantly higher field-effect mobilities, compared to multifiber and thin-films, exceeding 2 cm(2) V(-1) s(-1). Such an efficient charge transport is the result of strong intermolecular coupling between closely packed PDIF-CN2 molecules and of a low density of structural defects. The improved crystallinity allows efficient collection of photogenerated Frenkel excitons, which results in the highest reported responsivity (R) for single-fiber PDI-based phototransistors, and photosensitivity (P) exceeding 2 × 10(3) AW(-1), and 5 × 10(3), respectively. These findings provide unambiguous evidence for the key role played by the high degree of order at the supramolecular level to leverage the material's properties toward the fabrication of light-sensitive organic field-effect transistors combining a good operational stability, high responsivity and photosensitivity. Our results show also that the air-stability performances are superior in devices where highly crystalline supramolecularly engineered architectures serve as the active layer.

Optical Input/Electrical Output Memory Elements based on a Liquid Crystalline Azobenzene Polymer

Responsive polymer materials can change their properties when subjected to external stimuli. In this work, thin films of thermotropic poly(metha)acrylate/azobenzene polymers are explored as active layer in light-programmable, electrically readable memories. The memory effect is based on the reversible modifications of the film morphology induced by the photoisomerization of azobenzene mesogenic groups. When the film is in the liquid crystalline phase, the trans → cis isomerization induces a major surface reorganization on the mesoscopic scale that is characterized by a reduction in the effective thickness of the film. The film conductivity is measured in vertical two-terminal devices in which the polymer is sandwiched between a Au contact and a liquid compliant E-GaIn drop. We demonstrate that the trans → cis isomerization is accompanied by a reversible 100-fold change in the film conductance. In this way, the device can be set in a high- or low-resistance state by light irradiation at different wavelengths. This result paves the way toward the potential use of poly(metha)acrylate/azobenzene polymer films as active layer for optical input/electrical output memory elements.

Degradation of Methylammonium Lead Iodide Perovskite Structures through Light and Electron Beam Driven Ion Migration

Organometal halide perovskites show promising features for cost-effective application in photovoltaics. The material instability remains a major obstacle to broad application because of the poorly understood degradation pathways. Here, we apply simultaneous luminescence and electron microscopy on perovskites for the first time, allowing us to monitor in situ morphology evolution and optical properties upon perovskite degradation. Interestingly, morphology, photoluminescence (PL), and cathodoluminescence of perovskite samples evolve differently upon degradation driven by electron beam (e-beam) or by light. A transversal electric current generated by a scanning electron beam leads to dramatic changes in PL and tunes the energy band gaps continuously alongside film thinning. In contrast, light-induced degradation results in material decomposition to scattered particles and shows little PL spectral shifts. The differences in degradation can be ascribed to different electric currents that drive ion migration. Moreover, solution-processed perovskite cuboids show heterogeneity in stability which is likely related to crystallinity and morphology. Our results reveal the essential role of ion migration in perovskite degradation and provide potential avenues to rationally enhance the stability of perovskite materials by reducing ion migration while improving morphology and crystallinity. It is worth noting that even moderate e-beam currents (86 pA) and acceleration voltages (10 kV) readily induce significant perovskite degradation and alter their optical properties. Therefore, attention has to be paid while characterizing such materials using scanning electron microscopy or transmission electron microscopy techniques.

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

This review presents recent progress on charge transport properties, carrier scattering mechanisms, and carrier mobility engineering of two-dimensional transition metal chalcogenides.

Conductivity in organic semiconductors hybridized with the vacuum field

Much effort over the past decades has been focused on improving carrier mobility in organic thin-film transistors by optimizing the organization of the material or the device architecture. Here we take a different path to solving this problem, by injecting carriers into states that are hybridized to the vacuum electromagnetic field. To test this idea, organic semiconductors were strongly coupled to plasmonic modes to form coherent states that can extend over as many as 10(5) molecules and should thereby favour conductivity. Experiments show that indeed the current does increase by an order of magnitude at resonance in the coupled state, reflecting mostly a change in field-effect mobility. A theoretical quantum model confirms the delocalization of the wavefunctions of the hybridized states and its effect on the conductivity. Our findings illustrate the potential of engineering the vacuum electromagnetic environment to modify and to improve properties of materials.

A multifunctional polymer-graphene thin-film transistor with tunable transport regimes

Here we describe a strategy to fabricate multifunctional graphene-polymer hybrid thin-film transistors (PG-TFT) whose transport properties are tunable by varying the deposition conditions of liquid-phase exfoliated graphene (LPE-G) dispersions onto a dielectric surface and via thermal annealing post-treatments. In particular, the ionization energy (IE) of the LPE-G drop-cast on SiO2 can be finely adjusted prior to polymer deposition via thermal annealing in air environment, exhibiting values gradually changing from 4.8 eV up to 5.7 eV. Such a tunable graphene's IE determines dramatically different electronic interactions between the LPE-G and the semiconducting polymer (p- or n-type) sitting on its top, leading to devices where the output current of the PG-TFT can be operated from being completely turned off up to modulable. In fact upon increasing the surface coverage of graphene nanoflakes on the SiO2 the charge transport properties within the top polymer layer are modified from being semiconducting up to truly conductive (graphite-like). Significantly, when the IE of LPE-G is outside the polymer band gap, the PG-TFT can operate as a multifunctional three terminal switch (transistor) and/or memory device featuring high number of erase-write cycles. Our PG-TFT, based on a fine energy level engineering, represents a memory device operating without the need of a dielectric layer separating a floating gate from the active channel.

The dramatic effect of the annealing temperature and dielectric functionalization on the electron mobility of indene-C60 bis-adduct thin films

The effect of annealing temperature/duration and surface functionalization is explored for indene-C₆₀ bis-adduct (ICBA) films. Electron mobility approaches 0.1 cm² V⁻¹ s⁻¹.

Solution-processed field-effect transistors based on dihexylquaterthiophene films with performances exceeding those of vacuum-sublimed films

Solution-processable oligothiophenes are model systems for charge transport and fabrication of organic field-effect transistors (OFET) . Herein we report a structure vs function relationship study focused on the electrical characteristics of solution-processed dihexylquaterthiophene (DH4T)-based OFET. We show that by combining the tailoring of all interfaces in the bottom-contact bottom-gate transistor, via chemisorption of ad hoc molecules on electrodes and dielectric, with suitable choice of the film preparation conditions (including solvent type, concentration, volume, and deposition method), it is possible to fabricate devices exhibiting field-effect mobilities exceeding those of vacuum-processed DH4T transistors. In particular, the evaporation rate of the solvent, the processing temperature, as well as the concentration of the semiconducting material were found to hold a paramount importance in driving the self-assembly toward the formation of highly ordered and low-dimensional supramolecular architectures, confirming the kinetically governed nature of the self-assembly process. Among the various architectures, hundreds-of-micrometers long and thin DH4T crystallites exhibited enhanced charge transport.

Harnessing the liquid-phase exfoliation of graphene using aliphatic compounds: a supramolecular approach

The technological exploitation of the extraordinary properties of graphene relies on the ability to achieve full control over the production of a high-quality material and its processing by up-scalable approaches in order to fabricate large-area films with single-layer or a few atomic-layer thickness, which might be integrated in working devices. A simple method is reported for producing homogenous dispersions of unfunctionalized and non-oxidized graphene nanosheets in N-methyl-2-pyrrolidone (NMP) by using simple molecular modules, which act as dispersion-stabilizing compounds during the liquid-phase exfoliation (LPE) process, leading to an increase in the concentration of graphene in dispersions. The LPE-processed graphene dispersion was shown to be a conductive ink. This approach opens up new avenues for the technological applications of this graphene ink as low-cost electrodes and conducting nanocomposite for electronics.

Graphene nanoribbon blends with P3HT for organic electronics

In organic field-effect transistors (OFETs) the electrical characteristics of polymeric semiconducting materials suffer from the presence of structural/morphological defects and grain boundaries as well as amorphous domains within the film, hindering an efficient transport of charges. To improve the percolation of charges we blend a regioregular poly(3-hexylthiophene) (P3HT) with newly designed N = 18 armchair graphene nanoribbons (GNRs). The latter, prepared by a bottom-up solution synthesis, are expected to form solid aggregates which cannot be easily interfaced with metallic electrodes, limiting charge injection at metal-semiconductor interfaces, and are characterized by a finite size, thus by grain boundaries, which negatively affect the charge transport within the film. Both P3HT and GNRs are soluble/dispersible in organic solvents, enabling the use of a single step co-deposition process. The resulting OFETs show a three-fold increase in the charge carrier mobilities in blend films, when compared to pure P3HT devices. This behavior can be ascribed to GNRs, and aggregates thereof, facilitating the transport of the charges within the conduction channel by connecting the domains of the semiconductor film. The electronic characteristics of the devices such as the Ion/Ioff ratio are not affected by the addition of GNRs at different loads. Studies of the electrical characteristics under illumination for potential use of our blend films as organic phototransistors (OPTs) reveal a tunable photoresponse. Therefore, our strategy offers a new method towards the enhancement of the performance of OFETs, and holds potential for technological applications in (opto)electronics.

The role of size and coating in Au nanoparticles incorporated into bi-component polymeric thin-film transistors

We describe the effect of blending poly(3-hexylthiophene) (P3HT) with Au nanoparticles (AuNPs) on the performance of organic thin-film transistors. To this end we have used AuNPs of two different sizes coated with chemisorbed SAMs of oligophenyl-thiols possessing increasing lengths. The electrical characteristics of the hybrid materials revealed changes in the field-effect mobility depending primarily on the AuNP size, as a result of the variable energy level of the coated metallic nanocluster and by the degree of modification of the P3HT crystalline structure.

25th anniversary article: organic electronics marries photochromism: generation of multifunctional interfaces, materials, and devices

Organic semiconductors have garnered significant interest as key components for flexible, low-cost, and large-area electronics. Hitherto, both materials and processing thereof seems to head towards a mature technology which shall ultimately meet expectations and efforts built up over the past years. However, by its own organic electronics cannot compete or complement the silicon-based electronics in integrating multiple functions in a small area unless novel solutions are brought into play. Photochromic molecules are small organic molecules able to undergo reversible photochemical isomerization between (at least) two (meta)stable states which exhibit markedly different properties. They can be embedded as additional component in organic-based materials ready to be exploited in devices such as OLEDs, OFETs, and OLETs. The structurally controlled incorporation of photochromic molecules can be done at various interfaces of a device, including the electrode/semiconductor or dielectric/semiconductor interface, or even as a binary mixture in the active layer, in order to impart a light responsive nature to the device. This can be accomplished by modulating via a light stimulus fundamental physico-chemical properties such as charge injection and transport in the device.

Nanoscale electrical investigation of layer-by-layer grown molecular wires

Nanoscopic metal-molecule-metal junctions consisting of Fe-bis(terpyridine)-based ordered nanostructures are grown in layer-by-layer fashion on a solid support. Hopping is demonstrated as the main charge-transport mechanism both experimentally and theoretically.

Charge transport over multiple length scales in supramolecular fiber transistors: single fiber versus ensemble performance

Self-assembled organic fibers combine facile solution processing with the performance benefits of single crystals. Here, the first evidence is shown of band-like transport in an n-type solution-processed small molecule system, a limited role of shallow traps, and a single fiber electron mobility that is several orders of magnitude higher than that measured in fiber ensembles or spin-cast films.

Charge transport in fibre-based perylene-diimide transistors: effect of the alkyl substitution and processing technique

We report a comparative study on the self-assembly from solution and electrical characterization of n-type semiconducting fibres obtained from five different perylenebis(dicarboximide) (PDI) derivatives. In particular we investigated the role of the nature of the alkyl chain covalently linked to the N,N' sites of the PDI in modulating the molecular solubility and aggregation capacity. We explored the morphologies of the self-assembled architectures physisorbed on dielectric surfaces and in particular how they can be modified by tuning the deposition and post-deposition procedures, i.e. by modulating the kinetics of the self-assembly process. To this end, alongside the conventional spin-coating, solvent vapour annealing (SVA) and solvent induced precipitation (SIP) have been employed. Both approaches led to fibres having widths of several hundred nanometres and lengths up to tens of micrometres. SVA formed isolated fibres which were tens of nanometres high, flat, and tapered at the ends. Conversely, SIP fibres exhibited nearly matching heights and widths, but organized into bundles. Despite these morphological differences, the same intermolecular packing is found by XRD in each type of structure, albeit with differing degrees of long-range order. The study of the electrical characteristics of the obtained low dimensional nano-assemblies has been accomplished by fabricating and characterizing organic field-effect transistors.