Measuring small field profiles and output factors with a stemless plastic scintillator array

PURPOSE

To fabricate a 1D stemless plastic scintillation detector (SPSD) array using organic photodiodes and to use the detector to measure small field profiles and output factors.

METHODS

An organic photodiode array was fabricated by spin coating a mixture of P3HT and PCBM organic semiconductors onto an ITO-coated glass substrate and depositing aluminum top contacts. Four bulk scintillators of various dimensions were placed on top of the photodiode array. A fifth scintillator was used that had been segmented by laser etching and the septa filled with black paint. Each detector array was first calibrated using a reference field of 95 cm SSD, 5 cm depth, and 10 × 10 cm² field size for a 6 MV photon beam. After calibration, profiles were measured for three small field sizes: 0.5 × 0.5 cm² , 1 × 1 cm² , and 2 × 2 cm² . Using the central pixel of the array, output factors were measured for field sizes of 0.5 × 0.5 cm² to 25 × 25 cm² . Small field profiles were compared to film measurements and output factors compared to ion chamber measurements.

RESULTS

The segmented scintillator measured profiles that were in good agreement with film for all three field sizes. Output factors agreed to within 1.2% of ion chamber over the field size range of 1 × 1 cm² to 25 × 25 cm² . At 0.5 × 0.5 cm² the segmented scintillator underestimated the output factor compared to film and a microDiamond detector. Bulk scintillators failed to produce a good agreement with film for measured profiles and deviations from ion chamber for output factors were apparent at field sizes below 5 × 5 cm² . In comparison to a bulk scintillator of dimensions 5 × 5 × 0.5 cm³ the etched scintillator saw a reduction of 5.1, 7.1, and 10.5 times the signal for field sizes of 0.5 × 0.5 cm² , 1 × 1 cm² , and 2 × 2 cm² , respectively. The reduction of signal comes from reduced cross-talk that was present in all of the bulk scintillator geometries to various degrees.

CONCLUSION

A 1D SPSD array was demonstrated with various scintillator designs. The etched scintillator array demonstrated excellent small field profile measurements when compared to film and output factors (down to 1 × 1 cm² field size) when compared to micro ion chamber and diamond detector measurements.

Method for the differentiation of radiation-induced photocurrent from total measured current in P3HT/PCBM BHJ photodiodes

Thin film radiation-detecting diodes fabricated in the laboratory, such as an organic bulk heterojunction, often contain conductive leads, indium tin oxide traces and metallic interconnects which are exposed to the high-energy photon beam during operation. These components generate extraneous radiation-induced currents, that, if not accounted for, will erroneously be attributed to the detector. In commercial devices, these contributions are mitigated by minimizing the size of these components, an approach that is often not feasible in a research lab. Here we demonstrate a method to measure these extraneous signals, and by subtraction, correct the gross signal to accurately reflect the signal generated in the active volume of the diode itself. The method can effectively correct the extraneous signal. The method showed promise over a range of photon beam energies, dose rates, and field sizes.

Fabrication and characterization of a stemless plastic scintillation detector

PURPOSE

To fabricate a stemless plastic scintillation detector (SPSD) and characterize its linearity and reproducibility, and its dependence on energy and dose per pulse; and to apply it to clinical PDD and output factor measurements.

METHODS

An organic bulk heterojunction photodiode was fabricated by spin coating a blend of P3HT and PCBM onto an ITO-coated glass substrate and depositing aluminum top contacts. Eljen scintillators (~5 × 5 × 5 mm³ ; EJ-204, EJ-208, and EJ-260) or Saint-Gobain scintillators (~3 × 3 × 2 mm³ ; BC-400 and BC-412) were placed on the opposite side of the glass using a silicone grease (optical coupling agent) creating the SPSD. Energy dependence was measured by using 100, 180, and 300 kVp photon beams from an orthovoltage treatment unit (Xstrahl 300) and 6 and 10 MV photons from a Varian TrueBeam linear accelerator. Linearity, dose per pulse dependence, output factors, and PDDs were measured using a 6 MV photon beam. PDDs and output factors were compared to ion chamber measurements. A control device was fabricated by substituting polystyrene (PS) for the P3HT/PCBM layer. No photocurrent should be generated in the control device and so any current measured is due to Compton current in the electrodes, wires, and surroundings from the irradiation. Output factors were corrected by subtracting the signal measured using the control device from the photodiode measured signal to yield the photocurrent.

RESULTS

Each SPSD had excellent linearity with dose having an r² of 1 and sensitivities of 1.07 nC/cGy, 1.04 nC/cGy, 1.00 nC/cGy and 0.10 nC/cGy, and 0.10 nC/cGy for EJ-204, EJ-208, EJ-260 (5 × 5 × 5 mm³ volumes), BC-400, and BC-412 (3 × 3 × 2 mm³ volumes), respectively. No significant dose per pulse dependence was measured. Output factors matched within 1% for the large scintillators for field sizes of 5 × 5 cm² to 25 × 25 cm² , but there was a large under-response at field sizes below 3 × 3 cm² . After correcting the signal of the small scintillators by subtracting the current measured using the PS control, the output factors agreed with the ion chamber measurements within 1% from field sizes 1 × 1 cm² to 20 × 20 cm² . The impact of Cerenkov emissions in the scintillator was effectively corrected with a simple reflective coating on the scintillator. In comparison to a 6 MV photon beam, the large scintillator SPSDs exhibited 37%, 52%, and 73% of the response at energies 100 kVp, 180 kVp and 300 kVp, respectively.

CONCLUSION

The principle of the SPSD was demonstrated. Devices had excellent linearity, reproducibility, and no significant dose per pulse dependence, and a simple reflective coating was sufficient to correct for Cerenkov emissions from within the scintillator. The devices demonstrated similar energy dependence to other scintillator detectors used in a radiotherapy setting.

Simultaneous observation of free and defect-bound excitons in CH3NH3PbI3 using four-wave mixing spectroscopy

Solar cells incorporating organic-inorganic perovskite, which may be fabricated using low-cost solution-based processing, have witnessed a dramatic rise in efficiencies yet their fundamental photophysical properties are not well understood. The exciton binding energy, central to the charge collection process, has been the subject of considerable controversy due to subtleties in extracting it from conventional linear spectroscopy techniques due to strong broadening tied to disorder. Here we report the simultaneous observation of free and defect-bound excitons in CH₃NH₃PbI₃ films using four-wave mixing (FWM) spectroscopy. Due to the high sensitivity of FWM to excitons, tied to their longer coherence decay times than unbound electron- hole pairs, we show that the exciton resonance energies can be directly observed from the nonlinear optical spectra. Our results indicate low-temperature binding energies of 13 meV (29 meV) for the free (defect-bound) exciton, with the 16 meV localization energy for excitons attributed to binding to point defects. Our findings shed light on the wide range of binding energies (2–55 meV) reported in recent years.

Development of simple hole-transporting materials for perovskite solar cells

Three low-cost propeller-shaped small molecules based on a triphenylamine core and the high-performance donor molecule 7,7′-[4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b′]dithiophene-2,6-diyl]bis[6-fluoro-4-(5′-hexyl-[2,2′-bithiophen]-5-yl)benzo[c][1,2,5]thiadiazole] (DTS(FBTTh2)2) were investigated as hole-transporting materials in perovskite solar cells. Each hole-transporting material was designed with highly modular side arms, allowing for different bandgaps and thin-film properties while maintaining a consistent binding energy of the highest occupied molecular orbitals to facilitate hole extraction from the perovskite active layer. Perovskite solar cell devices were fabricated with each of the three triphenylamine-based hole-transporting materials and DTS(FBTTh2)2 and were compared to devices with 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) hole-transporting layers. Each of our triphenylamine hole-transporting materials and DTS(FBTTh2)2 displayed surface morphologies that were considerably rougher than that of spiro-OMeTAD; a factor that may contribute to lower device performance. It was found that using inert, insulating polymers as additives with DTS(FBTTh2)2 reduced the surface roughness, resulting in devices with higher photocurrents.

Systematic study on the impact of water on the performance and stability of perovskite solar cells

Sequentially spin-coated inverted perovskite solar cells were constructed with systematically varied concentrations of water in the PbI₂precursor solution. Surprisingly, small concentrations of water improved long-term stability, although with lower initial efficiency.

Understanding the morphology of solution processed fullerene-free small molecule bulk heterojunction blends

The impact of processing conditions on the morphological characteristics of bulk-heterojunction molecular blends prepared from small molecules based on diketopyrrolopyrrole (DPP) and perylene-diimide (PDI) chromophores have been investigated.

The Silicon:Colloidal Quantum Dot Heterojunction

A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector.

Perovskite-fullerene hybrid materials suppress hysteresis in planar diodes

Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite-PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI3(-) antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solar cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour.

The structural evolution of an isoindigo-based non-fullerene acceptor for use in organic photovoltaics

The structural evolution of an isoindigo molecule acceptor.

High open circuit voltage organic solar cells based upon fullerene free bulk heterojunction active layers

We have recently reported on a small organic molecule containing a bithiophene core with end-capping phthalimide units (PthTh2Pth) that exhibited a H-aggregation tendency in the solid state and high electron mobility in organic field effect transistors. In this contribution, we have studied both the physical and electrical properties of poly(3-hexylthiophene) (P3HT) and PthTh2Pth thin films by measuring the optical absorption, Frontier molecular orbital energy levels, photoluminescence quenching, thermal properties, and photovoltaic response. Our results have provided a useful insight into the use of PthTh2Pth as an electron acceptor material for organic photovoltaic applications. In comparison with high-performance, fullerene-based, solution-processed bulk heterojunction solar cells reported in the literature, a relatively high open circuit voltage (∼0.94 V) was obtained for various donor–acceptor blend ratios. These results highlight the potential for PthTh2Pth to act as an alternative to fullerenes as acceptors in organic solar cell devices.

Rapid thermal conductivity measurements for combinatorial thin films

A simple and inexpensive automated method for determining the thermal conductivity of a combinatorial library of thin films is demonstrated by measuring the thermal conductivity of a sputtered silicon dioxide film of varying thickness deposited on single crystal silicon. Using 3ω measurements, two methods for calculating the substrate thermal conductivity and two methods for determining the film thermal conductivity are demonstrated and compared. The substrate thermal conductivity was found to be 139 ± 3 W/m·K. Using the measured variation in film thickness, the film thermal conductivity was found to be 1.11 ± 0.05 W/m·K, in excellent agreement with published values for sputtered SiO2, demonstrating the accuracy of the method.

Comparative interface metrics for metal-free monolayer-based dye-sensitized solar cells

The first quantitative comparison between self-assembled monolayers of homologous carboxylate- and phosphonate-terminated organic dyes that are of use in dye-sensitized solar cells (DSSCs) is reported. (Cyanovinyl)phosphonate-terminated oligothiophenes and (cyanovinyl)carboxylate-terminated oligothiophenes were synthesized on TiO(2) thin film electrodes. Structurally analogous organics were compared for the effect of the anchoring groups on photochemical properties in solution as measured by UV/vis spectroscopy and for reactivity with the electrode surface. Monolayers were grown on the TiO(2) electrodes either by "tethering by aggregation and growth" (T-BAG) or by solution dipping. Surface roughness and homogeneity, elemental composition, and thickness of the monolayers were evaluated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and ellipsometry. Molecular loadings for each monolayer on TiO(2) were quantified by quartz crystal microgravimetry (QCM), and the stability of bonding between each class of dyes and the TiO(2) was evaluated by measuring desorption, also by QCM; the carboxylates underwent significant dissociation in aqueous media but the phosphonates did not. DSSCs were prepared from each congener and from simple oligothiophene phosphonates to determine the effect of the cyanovinyl group on device behavior; all DSSCs were studied under irradiation from a AM 1.5G solar light source; the effect of cyanovinyl group termination was comparable to that of adding a thiophene moiety, and the DSSC using a self-assembled monolayer of (sexithiophene)phosphonate (6TP) had total power conversion efficiency (η) of ca. 5%.

Organophosphonate self-assembled monolayers for gate dielectric surface modification of pentacene-based organic thin-film transistors: a comparative study

Organic thin-film transistors using pentacene as the semiconductor were fabricated on silicon. A series of phosphonate-based self-assembled monolayers (SAMs) was used as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region. Octadecylphosphonate, (quarterthiophene)phosphonate, and (9-anthracene)phosphonate SAMs were examined. Significant improvements in the sub-threshold slope and threshold voltage were observed for each SAM treatment as compared to control devices fabricated without the buffer. These improvements were related to structural motif relationships between the pentacene semiconductor and the SAM constituents. Measured transistor properties were consistent with a reduction in density of charge trapping states at the semiconductor-dielectric interface that was effected by introduction of the self-assembled monolayer.

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