Physics, Structures, and Applications of Fluorite-Structured Ferroelectric Tunnel Junctions

The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of ferroelectricity in fluorite-structured oxides such as HfO2 and ZrO2 . In terms of thickness scaling, CMOS compatibility, and 3D integration, these fluorite-structured FTJs provide a number of benefits over conventional perovskite-based FTJs. Here, recent developments involving all FTJ devices with fluorite structures are examined. The transport mechanism of fluorite-structured FTJs is explored and contrasted with perovskite-based FTJs and other 2-terminal resistive switching devices starting with the operation principle and essential parameters of the tunneling electroresistance effect. The applications of FTJs, such as neuromorphic devices, logic-in-memory, and physically unclonable function, are then discussed, along with several structural approaches to fluorite-structure FTJs. Finally, the materials and device integration difficulties related to fluorite-structure FTJ devices are reviewed. The purpose of this review is to outline the theories, physics, fabrication processes, applications, and current difficulties associated with fluorite-structure FTJs while also describing potential future possibilities for optimization.

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices

Hafnium oxide (HfO₂)-based ferroelectric tunnel junctions (FTJs) have been extensively evaluated for high-speed and low-power memory applications. Herein, we investigated the influence of Al content in HfAlO thin films on the ferroelectric characteristics of HfAlO-based FTJs. Among HfAlO devices with different Hf/Al ratios (20:1, 34:1, and 50:1), the HfAlO device with Hf/Al ratio of 34:1 exhibited the highest remanent polarization and excellent memory characteristics and, thereby, the best ferroelectricity among the investigated devices. Furthermore, first-principal analyses verified that HfAlO thin films with Hf/Al ratio of 34:1 promoted the formation of the orthorhombic phase against the paraelectric phase as well as alumina impurities and, thus, enhanced the ferroelectricity of the device, providing theoretical support for supporting experimental results. The findings of this study provide insights for developing HfAlO-based FTJs for next-generation in-memory computing applications.

A van der Waals Ferroelectric Tunnel Junction for Ultrahigh-Temperature Operation Memory

Facing the constant scaling down and thus increasingly severe self-heating effect, developing ultrathin and heat-insensitive ferroelectric devices is essential for future electronics. However, conventional ultrathin ferroelectrics and most 2D ferroelectric materials (2DFMs) are not suitable for high-temperature operation due to their low Curie temperature. Here, by using few-layer α-In₂ Se₃ , a special 2DFM with high Curie temperature, van der Waals (vdW) ferroelectric tunnel junction (FTJ) memories that deliver outstanding and reliable performance at both room and high temperatures are constructed. The vdW FTJs offer a large on/off ratio of 10⁴ at room temperature and still reveal excellent on/off ratio at an ultrahigh temperature of 470 K, which will fail down other 2DFMs. Moreover, long retention and reliable cyclic endurance at high temperature are achieved, showing robust thermal stability of the vdW FTJ memory. The observations of this work demonstrate an exciting promise of α-In₂ Se₃ for reliable service in high temperature either from self-heating or harsh environments.

Local Electric Property Modification of Ferroelectric Tunnel Junctions Induced by Variation of Polarization Charge Screening Conditions under Measurement with Scanning Probe Techniques

Scanning tunneling spectroscopy in ultrahigh vacuum conditions and conductive atomic-force microscopy in ambient conditions were used to study local electroresistive properties of ferroelectric tunnel junctions SrTiO₃/La_0.7Sr_0.3MnO₃/BaTiO₃. Interestingly, experimental current-voltage characteristics appear to strongly depend on the measurement technique applied. It was found that screening conditions of the polarization charges at the interface with a top electrode differ for two scanning probe techniques. As a result, asymmetry of the tunnel barrier height for the opposite ferroelectric polarization orientations may be influenced by the method applied to study the local tunnel electroresistance. Our observations are well described by the theory of electroresistance in ferroelectric tunnel junctions. Based on this, we reveal the main factors that influence the polarization-driven local resistive properties of the device under study. Additionally, we propose an approach to enhance asymmetry of ferroelectric tunnel junctions during measurement. While keeping the high locality of scanning probe techniques, it helps to increase the difference in the value of tunnel electroresistance for the opposite polarization orientations.

A novel physical unclonable function (PUF) using 16 × 16 pure-HfOxferroelectric tunnel junction array for security applications

As the computing paradigm has shifted toward edge computing, improving the security of edge devices is attracting significant attention. However, because edge devices have limited resources in terms of power and area, it is difficult to apply a conventional cryptography system to protect them. On the other hand, as a simple security application, a physical unclonable function (PUF) can be implemented without power and area problems because it provides a security key by utilizing process variations without additional external circuits. Ferroelectric tunnel junctions (FTJs) are 2-terminal devices that store information by changing the resistance of a ferroelectric material, where the resistance is determined by the polarization states of the ferroelectric domains. Because polycrystalline ferroelectric materials have a multi-domain nature, domain variation can also be used as a randomness source to induce cell-to-cell variations along with process variations. In this paper, we demonstrate PUF operations of a low-power, small area 16 × 16 hafnium oxide (pure-HfO_x)-based FTJ array using certain metrics. It is clear that the proposed array consisting of scaled FTJs has adequate randomness for security applications such that the array-level PUF operations are robust against model-based machine learning attacks.

Low-Temperature Tunneling Electroresistance in Ferromagnetic Metal/Ferroelectric/Semiconductor Tunnel Junctions

Ferroelectric tunnel junctions (FTJs) as artificial synaptic devices are promising candidates for the building block of nonvolatile data storage devices. However, a small ON/OFF ratio of FTJs limits their application in low-temperature operations. In this work, the influence of quantum interference effects on tunneling electroresistance in the La_0.7Sr_0.3MnO₃/BaTiO₃/Nb:SrTiO₃ (ferromagnetic metal/ferroelectric/semiconductor) FTJ at low temperatures is investigated. The Current-voltage curves are observed in the tunnel junction from 300 to 10 K with a six-unit-cell thick BaTiO₃ film by the ferroelectric polarization effect. First, the ON/OFF current ratio increases from 300 to 30 K due to the increase of polarization in the ferroelectric barrier, and then, it gradually decreases when the temperature drops below 30 K. An anomalous ON/OFF current ratio of ∼10⁵ is obtained at 30 K. The low-temperature tunneling properties in the FTJ are associated with a low-temperature resistivity minimum in the ferromagnetic metal layer by the electron-electron interaction, which increases the La_0.7Sr_0.3MnO₃/BaTiO₃ interface resistance, leading to a higher resistance state and lower I_OFF for the OFF state. As a result, the ON/OFF current ratio is abruptly enhanced at 30 K. Our results emphasize the crucial role of transport properties of La_0.7Sr_0.3MnO₃ in FTJs and pave the way for the design and application of FTJs at low temperatures.

Spin-Filtering Ferroelectric Tunnel Junctions as Multiferroic Synapses for Neuromorphic Computing

As nanoelectronic synapses, memristive ferroelectric tunnel junctions (FTJs) have triggered great interest due to the potential applications in neuromorphic computing for emulating biological brains. Here, we demonstrate multiferroic FTJ synapses based on the ferroelectric modulation of spin-filtering BaTiO₃/CoFe₂O₄ composite barriers. Continuous conductance change with an ON/OFF current ratio of ∼54 400% and long-term memory with the spike-timing-dependent plasticity (STDP) of synaptic weight for Hebbian learning are achieved by controlling the polarization switching of BaTiO₃. Supervised learning simulations adopting the STDP results as database for weight training are performed on a crossbar neural network and exhibit a high accuracy rate above 97% for recognition. The polarization switching also alters the band alignment of CoFe₂O₄ barrier relative to the electrodes, giving rise to the change of tunneling magnetoresistance ratio by about 10 times and even the reversal of its sign depending upon the resistance states. These results, especially the electrically switchable spin polarization, provide a new approach toward multiferroic neuromorphic devices with energy-efficient electrical manipulations through potential barrier design. In addition, the availability of spinel ferrite barriers epitaxially grown with ferroelectric oxides also expends the playground of FTJ devices for a broad scope of applications.

The Role of Ferroelectric Polarization in Resistive Memory Properties of Metal/Insulator/Semiconductor Tunnel Junctions: A Comparative Study

Recently, tunnel junction devices adopting semiconducting Nb:SrTiO₃ electrodes have attracted considerable attention for their potential applications in resistive data storage and neuromorphic computing. In this work, we report on a comparative study of Pt/insulator/Nb:SrTiO₃ tunnel junctions between ferroelectric BaTiO₃ and nonferroelectric SrTiO₃ and LaAlO₃ barriers to reveal the role of polarization in resistance switching properties. Although hysteretic behaviors appear in current-voltage measurements of all devices regardless of the barrier character, significantly improved current ratios by more than three orders of magnitude are observed in the Pt/BaTiO₃/Nb:SrTiO₃ tunnel junctions due to the dominance of polarization in modulation of junction barrier profiles between the low and high resistance states. The switchable polarization also gives rise to enhanced resistance retention since the electron diffusion that smears the barrier contrast of the bistable resistance states is suppressed by the polar BaTiO₃/Nb:SrTiO₃ interface associated with the ferroelectric bound charges. These polarization-induced effects are absent in the nonferroelectric Pt/SrTiO₃/Nb:SrTiO₃ and Pt/LaAlO₃/Nb:SrTiO₃ devices in which serious resistance state decay, described by Fick's second law, is observed since there are no switchable interface charges on SrTiO₃/Nb:SrTiO₃ and LaAlO₃/Nb:SrTiO₃ to block the electron diffusion. In addition, the Pt/BaTiO₃/Nb:SrTiO₃ device also exhibits an excellent switching endurance up to ∼4.0 × 10⁶ bipolar cycles. These enhancements indicate the importance of ferroelectric polarization for achieving high-performance resistance switching and suggest that metal/ferroelectric/Nb:SrTiO₃ tunnel junctions are promising candidates for nonvolatile memory applications.

Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier

Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in next-generation memories, owing to attractive advantages such as high-density of data storage, nondestructive readout, fast write/read access, and low energy consumption. Herein, recent progress regarding FTJ devices is reviewed with an emphasis on the modulation of the potential barrier. Electronic and ionic approaches that modulate the ferroelectric barriers themselves and/or induce extra barriers in electrodes or at ferroelectric/electrode interfaces are discussed with the enhancement of memory performance. Emerging physics, such as nanoscale ferroelectricity, resonant tunneling, and interfacial metallization, and the applications of FTJs in nonvolatile data storage, neuromorphic synapse emulation, and electromagnetic multistate memory are summarized. Finally, challenges and perspectives of FTJ devices are underlined.

Reproducible Ultrathin Ferroelectric Domain Switching for High-Performance Neuromorphic Computing

Neuromorphic computing consisting of artificial synapses and neural network algorithms provides a promising approach for overcoming the inherent limitations of current computing architecture. Developments in electronic devices that can accurately mimic the synaptic plasticity of biological synapses, have promoted the research boom of neuromorphic computing. It is reported that robust ferroelectric tunnel junctions can be employed to design high-performance electronic synapses. These devices show an excellent memristor function with many reproducible states (≈200) through gradual ferroelectric domain switching. Both short- and long-term plasticity can be emulated by finely tuning the applied pulse parameters in the electronic synapse. The analog conductance switching exhibits high linearity and symmetry with small switching variations. A simulated artificial neural network with supervised learning built from these synaptic devices exhibited high classification accuracy (96.4%) for the Mixed National Institute of Standards and Technology (MNIST) handwritten recognition data set.

Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon

Crystalline oxide ferroelectric tunnel junctions enable persistent encoding of information in electric polarization, featuring nondestructive readout and scalability that can exceed current commercial high-speed, nonvolatile ferroelectric memories. However, the well-established fabrication of epitaxial devices on oxide substrates is difficult to adapt to silicon substrates for integration into complementary metal-oxide-semiconductor electronics. In this work, we report ferroelectric tunnel junctions based on 2.8 nm-thick BaTiO₃ films grown epitaxially on SrTiO₃ growth substrates, released, and relaminated onto silicon. The performance of the transferred devices is comparable to devices characterized on the oxide substrate, suggesting a viable route toward next-generation nonvolatile memories broadly integrable with different materials platforms.

Complementary Resistive Switching Using Metal-Ferroelectric-Metal Tunnel Junctions

Complementary resistive switching (CRS) devices are receiving attention because they can potentially solve the current-sneak and current-leakage problems of memory arrays based on resistive switching (RS) elements. It is shown here that a simple anti-serial connection of two ferroelectric tunnel junctions, based on BaTiO₃ , with symmetric top metallic electrodes and a common, floating bottom nanometric film electrode, constitute a CRS memory element. It allows nonvolatile storage of binary states ("1" = "HRS+LRS" and "0" = "LRS+HRS"), where HRS (LRS) indicate the high (low) resistance state of each ferroelectric tunnel junction. Remarkably, these states have an identical and large resistance in the remanent state, characteristic of CRS. Here, protocols for writing information are reported and it is shown that non-destructive or destructive reading schemes can be chosen by selecting the appropriate reading voltage amplitude. Moreover, this dual-tunnel device has a significantly lower power consumption than a single ferroelectric tunnel junction to perform writing/reading functions, as is experimentally demonstrated. These findings illustrate that the recent impressive development of ferroelectric tunnel junctions can be further exploited to contribute to solving critical bottlenecks in data storage and logic functions implemented using RS elements.

Control of Synaptic Plasticity Learning of Ferroelectric Tunnel Memristor by Nanoscale Interface Engineering

Brain-inspired computing is an emerging field, which intends to extend the capabilities of information technology beyond digital logic. The progress of the field relies on artificial synaptic devices as the building block for brainlike computing systems. Here, we report an electronic synapse based on a ferroelectric tunnel memristor, where its synaptic plasticity learning property can be controlled by nanoscale interface engineering. The effect of the interface engineering on the device performance was studied. Different memristor interfaces lead to an opposite virgin resistance state of the devices. More importantly, nanoscale interface engineering could tune the intrinsic band alignment of the ferroelectric/metal-semiconductor heterostructure over a large range of 1.28 eV, which eventually results in different memristive and spike-timing-dependent plasticity (STDP) properties of the devices. Bidirectional and unidirectional gradual resistance modulation of the devices could therefore be controlled by tuning the band alignment. This study gives useful insights on tuning device functionalities through nanoscale interface engineering. The diverse STDP forms of the memristors with different interfaces may play different specific roles in various spike neural networks.

Effect of Polarization Reversal in Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy

Because of their compatibility with modern Si-based technology, HfO₂-based ferroelectric films have recently attracted attention as strong candidates for applications in memory devices, in particular, ferroelectric field-effect transistors or ferroelectric tunnel junctions. A key property defining the functionality of these devices is the polarization dependent change of the electronic band alignment at the metal/ferroelectric interface. Here, we report on the effect of polarization reversal in functional ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors on the potential distribution across the stack and the electronic band line-up at the interfaces studied in operando by hard X-ray photoemission spectroscopy. By tracking changes in the position of Hf_0.5Zr_0.5O₂ core-level lines with respect to those of the TiN electrode in both short- and open-circuit configurations following in situ polarization reversal, we derive the conduction band offset to be 0.7 (1.0) eV at the top and 1.7 (1.0) eV at the bottom interfaces for polarization, pointing up (down), respectively. Energy dispersive X-ray spectroscopy profiling of the sample cross-section in combination with the laboratory X-ray photoelectron spectroscopy reveal the presence of a TiO_x/TiON layer at  both interfaces. The observed asymmetry in the band line-up changes in the TiN/Hf_0.5Zr_0.5O₂/TiN memory stack is explained by different origin of these oxidized layers and effective pinning of polarization at the top interface. The described methodology and first experimental results are useful for the optimization of HfO₂-based ferroelectric memory devices under development.

Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low resistive state via conducting filament forming/deforming, while the resistive switching of ferroelectric tunnel junctions (FTJs) arises from barrier height or width variation while ferroelectric polarization reverses between asymmetric electrodes. Here the authors demonstrate a coexistence of OVM and ferroelectric induced resistive switching in a BaTiO₃ FTJ by comparing BaTiO₃ with SrTiO₃ based tunnel junctions. This coexistence results in two distinguishable loops with multi-nonvolatile resistive states. The primary loop originates from the ferroelectric switching. The second loop emerges at a voltage close to the SrTiO₃ switching voltage, showing OVM being its origin. BaTiO₃ based devices with controlled oxygen vacancies enable us to combine the benefits of both OVM and ferroelectric tunneling to produce multistate nonvolatile memory devices.

A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction

In recent years, experimental demonstration of ferroelectric tunnel junctions (FTJ) based on perovskite tunnel barriers has been reported. However, integrating these perovskite materials into conventional silicon memory technology remains challenging due to their lack of compatibility with the complementary metal oxide semiconductor process (CMOS). This communication reports the fabrication of an FTJ based on a CMOS-compatible tunnel barrier Hf_0.5Zr_0.5O₂ (6 unit cells thick) on an equally CMOS-compatible TiN electrode. Analysis of the FTJ by grazing angle incidence X-ray diffraction confirmed the formation of the noncentrosymmetric orthorhombic phase (Pbc2₁, ferroelectric phase). The FTJ characterization is followed by the reconstruction of the electrostatic potential profile in the as-grown TiN/Hf_0.5Zr_0.5O₂/Pt heterostructure. A direct tunneling current model across a trapezoidal barrier was used to correlate the electronic and electrical properties of our FTJ devices. The good agreement between the experimental and theoretical model attests to the tunneling electroresistance effect (TER) in our FTJ device. A TER ratio of ∼15 was calculated for the present FTJ device at low read voltage (+0.2 V). This study suggests that Hf_0.5Zr_0.5O₂ is a promising candidate for integration into conventional Si memory technology.

Effect of Extrinsically Introduced Passive Interface Layer on the Performance of Ferroelectric Tunnel Junctions

We report the effect of the top electrode/functional layer interface on the performance of ferroelectric tunnel junctions. Ex situ and in situ fabrication process were used to fabricate the top Pt electrode. With the ex situ fabrication process, one passive layer at the top interface would be induced. Our experimental results show that the passive interface layer of the ex situ devices increases the coercive voltage of the functional BaTiO₃ layer and decreases the tunneling current magnitude. However, the ex situ tunneling devices possess more than 1000 times larger ON/OFF ratios than that of the in situ devices with the same size of top electrode.

Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions

Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO₃ ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS₂) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS₂ results in a giant tunneling electroresistance effect in the hybrid MoS₂-BaTiO₃-SrRuO₃ ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 10⁴, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS₂ electrode in response to ferroelectric switching, which alters the barrier at the MoS₂-BaTiO₃ interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO₃ adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.

Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces

Universal, giant and nonvolatile resistive switching is demonstrated for oxide tunnel junctions with ferroelectric PbZr0.2 Ti0.8 O3 , ferroelectric BaTiO3, and paraelectric SrTiO3 tunnel barriers. The effects are caused by reversible migration of oxygen vacancies between the tunnel barrier and bottom La2/3 Sr1/3 MnO3 electrode. The switching process, which is driven by large electric fields, is efficient down to a temperature of 5 K.

Imprint Control of BaTiO3 Thin Films via Chemically Induced Surface Polarization Pinning

Surface-adsorbed polar molecules can significantly alter the ferroelectric properties of oxide thin films. Thus, fundamental understanding and controlling the effect of surface adsorbates are crucial for the implementation of ferroelectric thin film devices, such as ferroelectric tunnel junctions. Herein, we report an imprint control of BaTiO3 (BTO) thin films by chemically induced surface polarization pinning in the top few atomic layers of the water-exposed BTO films. Our studies based on synchrotron X-ray scattering and coherent Bragg rod analysis demonstrate that the chemically induced surface polarization is not switchable but reduces the polarization imprint and improves the bistability of ferroelectric phase in BTO tunnel junctions. We conclude that the chemical treatment of ferroelectric thin films with polar molecules may serve as a simple yet powerful strategy to enhance functional properties of ferroelectric tunnel junctions for their practical applications.

Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si

Because of their immense scalability and manufacturability potential, the HfO2-based ferroelectric films attract significant attention as strong candidates for application in ferroelectric memories and related electronic devices. Here, we report the ferroelectric behavior of ultrathin Hf0.5Zr0.5O2 films, with the thickness of just 2.5 nm, which makes them suitable for use in ferroelectric tunnel junctions, thereby further expanding the area of their practical application. Transmission electron microscopy and electron diffraction analysis of the films grown on highly doped Si substrates confirms formation of the fully crystalline non-centrosymmetric orthorhombic phase responsible for ferroelectricity in Hf0.5Zr0.5O2. Piezoresponse force microscopy and pulsed switching testing performed on the deposited top TiN electrodes provide further evidence of the ferroelectric behavior of the Hf0.5Zr0.5O2 films. The electronic band lineup at the top TiN/Hf0.5Zr0.5O2 interface and band bending at the adjacent n(+)-Si bottom layer attributed to the polarization charges in Hf0.5Zr0.5O2 have been determined using in situ X-ray photoelectron spectroscopy analysis. The obtained results represent a significant step toward the experimental implementation of Si-based ferroelectric tunnel junctions.

Ultrathin BaTiO₃-based ferroelectric tunnel junctions through interface engineering

The ability to change states using voltage in ferroelectric tunnel junctions (FTJs) offers a route for lowering the switching energy of memories. Enhanced tunneling electroresistance in FTJ can be achieved by asymmetric electrodes or introducing metal-insulator transition interlayers. However, a fundamental understanding of the role of each interface in a FTJ is lacking and compatibility with integrated circuits has not been explored adequately. Here, we report an incisive study of FTJ performance with varying asymmetry of the electrode/ferroelectric interfaces. Surprisingly high TER (∼400%) can be achieved at BaTiO3 layer thicknesses down to two unit cells (∼0.8 nm). Further our results prove that band offsets at each interface in the FTJs control the TER ratio. It is found that the off state resistance (R(Off)) increases much more rapidly with the number of interfaces compared to the on state resistance (ROn). These results are promising for future low energy memories.