Addressing the Conflict between Mobility and Stability in Oxide Thin-film Transistors

Amorphous oxide semiconductor thin-film transistors (AOS TFTs) are ever-increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility-stability conflict. The charge transport layer (CTL) is made of amorphous In-rich InSnZnO, which favors big average effective coordination number for all cations and more edge-shared structures for better charge transport. Praseodymium-doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo-generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm² V^-1 s^-1 ) and small negative-bias-illumination-stress/positive-bias-temperature-stress voltage shifts (-1.64/0.76 V). The design concept provides a promising route to address the mobility-stability conflict for high-end displays.

Batch Nanofabrication of Suspended Single 1D Nanoheaters for Ultralow-Power Metal Oxide Semiconductor-Based Gas Sensors

The demand for power-efficient micro-and nanodevices is increasing rapidly. In this regard, electrothermal nanowire-based heaters are promising solutions for the ultralow-power devices required in IoT applications. Herein, a method is demonstrated for producing a 1D nanoheater by selectively coating a suspended pyrolyzed carbon nanowire backbone with a thin Au resistive heater layer and utilizing it in a portable gas sensor system. This sophisticated nanostructure is developed without complex nanofabrication and nanoscale alignment processes, owing to the suspended architecture and built-in shadow mask. The suspended carbon nanowires, which are batch-fabricated using carbon-microelectromechanical systems technology, maintain their structural and functional integrity in subsequent nanopatterning processes because of their excellent mechanical robustness. The developed nanoheater is used in gas sensors via user-designable localization of the metal oxide semiconductor nanomaterials onto the central region of the nanoheater at the desired temperature. This allows the sensing site to be uniformly heated, enabling reliable and sensitive gas detection. The 1D nanoheater embedded gas sensor can be heated immediately to 250 °C at a remarkably low power of 1.6 mW, surpassing the performance of state-of-the-art microheater-based gas sensors. The presented technology offers facile 1D nanoheater production and promising pathways for applications in various electrothermal devices.

Readily Accessible Metallic Micro-Island Arrays for High-Performance Metal Oxide Thin-Film Transistors

Thin-film transistors using metal oxide semiconductors are essential in many unconventional electronic devices. Nevertheless, further advances will be necessary to broaden their technological appeal. Here, a new strategy is reported to achieve high-performance solution-processed metal oxide thin-film transistors (MOTFTs) by introducing a metallic micro-island array (M-MIA) on top of the MO back channel, where the MO is a-IGZO (amorphous indium-gallium-zinc-oxide). Here Al-MIAs are fabricated using honeycomb cinnamate cellulose films, created by a scalable breath-figure method, as a shadow mask. For IGZO TFTs, the electron mobility (µ_e ) increases from ≈3.6 cm² V^-1 s^-1 to near 15.6 cm² V^-1 s^-1 for optimal Al-MIA dimension/coverage of 1.25 µm/51%. The Al-MIA IGZO TFT performance is superior to that of controls using compact/planar Al layers (Al-PL TFTs) and Au-MIAs with the same channel coverage. Kelvin probe force microscopy and technology computer-aided design simulations reveal that charge transfer occurs between the Al and the IGZO channel which is optimized for specific Al-MIA dimensions/surface channel coverages. Furthermore, such Al-MIA IGZO TFTs with a high-k fluoride-doped alumina dielectric exhibit a maximum µ_e of >50.2 cm² V^-1 s^-1 . This is the first demonstration of a micro-structured MO semiconductor heterojunction with submicrometer resolution metallic arrays for enhanced transistor performance and broad applicability to other devices.

Modeling Interfacial Interaction between Gas Molecules and Semiconductor Metal Oxides: A New View Angle on Gas Sensing

With the development of internet of things and artificial intelligence electronics, metal oxide semiconductor (MOS)-based sensing materials have attracted increasing attention from both fundamental research and practical applications. MOS materials possess intrinsic physicochemical properties, tunable compositions, and electronic structure, and are particularly suitable for integration and miniaturization in developing chemiresistive gas sensors. During sensing processes, the dynamic gas-solid interface interactions play crucial roles in improving sensors' performance, and most studies emphasize the gas-MOS chemical reactions. Herein, from a new view angle focusing more on physical gas-solid interactions during gas sensing, basic theory overview and latest progress for the dynamic process of gas molecules including adsorption, desorption, and diffusion, are systematically summarized and elucidated. The unique electronic sensing mechanisms are also discussed from various aspects including molecular interaction models, gas diffusion mechanism, and interfacial reaction behaviors, where structure-activity relationship and diffusion behavior are overviewed in detail. Especially, the surface adsorption-desorption dynamics are discussed and evaluated, and their potential effects on sensing performance are elucidated from the gas-solid interfacial regulation perspective. Finally, the prospect for further research directions in improving gas dynamic processes in MOS gas sensors is discussed, aiming to supplement the approaches for the development of high-performance MOS gas sensors.

Inorganic-Organic Hybrid Phototransistor Array with Enhanced Photogating Effect for Dynamic Near-Infrared Light Sensing and Image Preprocessing

Narrow-band-gap organic semiconductors have emerged as appealing near-infrared (NIR) sensing materials by virtue of their unique optoelectronic properties. However, their limited carrier mobility impedes the implementation of large-area, dynamic NIR sensor arrays. In this work, high-performance inorganic-organic hybrid phototransistor arrays are achieved for NIR sensing, by taking advantage of the high electron mobility of In₂O₃ and the strong NIR absorption of a BTPV-4F:PTB7-Th bulk heterojunction (BHJ) with an enhanced photogating effect. As a result, the hybrid phototransistors reach a high responsivity of 1393.0 A W^-1, a high specific detectivity of 4.8 × 10¹² jones, and a fast response of 0.72 ms to NIR light (900 nm). Meanwhile, an integrated 16 × 16 phototransistor array with a one-transistor-one-phototransistor (1T1PT) architecture is achieved. On the basis of the enhanced photogating effect, the phototransistor array can not only achieve real-time, dynamic NIR light mapping but also implement image preprocessing, which is promising for advanced NIR image sensors.

Role of Heterojunctions of Core-Shell Heterostructures in Gas Sensing

Heterostructures made from metal oxide semiconductors (MOS) are fundamental for the development of high-performance gas sensors. Since their importance in real applications, a thorough understanding of the transduction mechanism is vital, whether it is related to a heterojunction or simply to the shell and core materials. A better understanding of the sensing response of heterostructured nanomaterials requires the engineering of heterojunctions with well-defined core and shell layers. Here, we introduce a series of prototypes CNT-_nMOS, CNT-_pMOS, CNT-_pMOS-_nMOS, and CNT-_nMOS-_pMOS hierarchical core-shell heterostructures (CSHS) permitting us to directly relate the sensing response to the MOS shell or to the p-n heterojunction. The carbon nanotubes are here used as highly conductive substrates permitting operation of the devices at relatively low temperature and are not involved in the sensing response. NiO and SnO₂ are selected as representative p- and n-type MOS, respectively, and the response of a set of samples is studied toward hydrogen considered as model analyte. The CNT-_n,pMOS CSHS exhibit response related to the _n,pMOS-shell layer. On the other hand, the CNT-_pMOS-_nMOS and CNT-_nMOS-_pMOS CSHS show sensing responses, which in certain cases are governed by the heterojunctions between _nMOS and _pMOS and strongly depends on the thickness of the MOS layers. Due to the fundamental nature of this study, these findings are important for the development of next generation gas sensing devices.

A Tri-Channel Oxide Transistor Concept for the Rapid Detection of Biomolecules Including the SARS-CoV-2 Spike Protein

Solid-state transistor sensors that can detect biomolecules in real time are highly attractive for emerging bioanalytical applications. However, combining upscalable manufacturing with the required performance remains challenging. Here, an alternative biosensor transistor concept is developed, which relies on a solution-processed In₂ O₃ /ZnO semiconducting heterojunction featuring a geometrically engineered tri-channel architecture for the rapid, real-time detection of important biomolecules. The sensor combines a high electron mobility channel, attributed to the electronic properties of the In₂ O₃ /ZnO heterointerface, in close proximity to a sensing surface featuring tethered analyte receptors. The unusual tri-channel design enables strong coupling between the buried electron channel and electrostatic perturbations occurring during receptor-analyte interactions allowing for robust, real-time detection of biomolecules down to attomolar (am) concentrations. The experimental findings are corroborated by extensive device simulations, highlighting the unique advantages of the heterojunction tri-channel design. By functionalizing the surface of the geometrically engineered channel with severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) antibody receptors, real-time detection of the SARS-CoV-2 spike S1 protein down to am concentrations is demonstrated in under 2 min in physiological relevant conditions.

Recent Advances and Challenges of Nanomaterials-Based Hydrogen Sensors

Safety is a crucial issue in hydrogen energy applications due to the unique properties of hydrogen. Accordingly, a suitable hydrogen sensor for leakage detection must have at least high sensitivity and selectivity, rapid response/recovery, low power consumption and stable functionality, which requires further improvements on the available hydrogen sensors. In recent years, the mature development of nanomaterials engineering technologies, which facilitate the synthesis and modification of various materials, has opened up many possibilities for improving hydrogen sensing performance. Current research of hydrogen detection sensors based on both conservational and innovative materials are introduced in this review. This work mainly focuses on three material categories, i.e., transition metals, metal oxide semiconductors, and graphene and its derivatives. Different hydrogen sensing mechanisms, such as resistive, capacitive, optical and surface acoustic wave-based sensors, are also presented, and their sensing performances and influence based on different nanostructures and material combinations are compared and discussed, respectively. This review is concluded with a brief outlook and future development trends.

Nanostructured metal oxide semiconductor-based sensors for greenhouse gas detection: progress and challenges

Climate change and global warming have been two massive concerns for the scientific community during the last few decades. Anthropogenic emissions of greenhouse gases (GHGs) have greatly amplified the level of greenhouse gases in the Earth's atmosphere which results in the gradual heating of the atmosphere. The precise measurement and reliable quantification of GHGs emission in the environment are of the utmost priority for the study of climate change. The detection of GHGs such as carbon dioxide, methane, nitrous oxide and ozone is the first and foremost step in finding the solution to manage and reduce the concentration of these gases in the Earth's atmosphere. The nanostructured metal oxide semiconductor (NMOS) based technologies for sensing GHGs emission have been found most reliable and accurate. Owing to their fascinating structural and morphological properties metal oxide semiconductors become an important class of materials for GHGs emission sensing technology. In this review article, the current concentration of GHGs in the Earth's environment, dominant sources of anthropogenic emissions of these gases and consequently their possible impacts on human life have been described briefly. Further, the different available technologies for GHG sensors along with their principle of operation have been largely discussed. The advantages and disadvantages of each sensor technology have also been highlighted. In particular, this article presents a comprehensive study on the development of various NMOS-based GHGs sensors and their performance analysis in order to establish a strong detection technology for the anthropogenic GHGs. In the last, the scope for improved sensitivity, selectivity and response time for these sensors, their future trends and outlook for researchers are suggested in the conclusion of this article.

Charge Transport Phenomena in Heterojunction Photocatalysts: The WO3/TiO2 System as an Archetypical Model

Recent studies have demonstrated the high efficiency through which nanostructured core-shell WO₃/TiO₂ (WT) heterojunctions can photocatalytically degrade model organic pollutants (stearic acid, QE ≈ 18% @ λ = 365 nm), and as such, has varied potential environmental and antimicrobial applications. The key motivation herein is to connect theoretical calculations of charge transport phenomena, with experimental measures of charge carrier behavior using transient absorption spectroscopy (TAS), to develop a fundamental understanding of how such WT heterojunctions achieve high photocatalytic efficiency (in comparison to standalone WO₃ and TiO₂ photocatalysts). This work reveals an order of magnitude enhancement in electron and hole recombination lifetimes, respectively located in the TiO₂ and WO₃ sides, when an optimally designed WT heterojunction photocatalyst operates under UV excitation. This observation is further supported by our computationally captured details of conduction band and valence band processes, identified as (i) dominant electron transfer from WO₃ to TiO₂ via the diffusion of excess electrons; and (ii) dominant hole transfer from TiO₂ to WO₃ via thermionic emission over the valence band edge. Simultaneously, our combined theoretical and experimental study offers a time-resolved understanding of what occurs on the micro- to milliseconds (μs-ms) time scale in this archetypical photocatalytic heterojunction. At the microsecond time scale, a portion of the accumulated holes in WO₃ contribute to the depopulation of W⁵⁺ polaronic states, whereas the remaining accumulated holes in WO₃ are separated from adjacent electrons in TiO₂ up to 3 ms after photoexcitation. The presence of these exceptionally long-lived photogenerated carriers, dynamically separated by the WT heterojunction, is the origin of the superior photocatalytic efficiency displayed by this system (in the degradation of stearic acid). Consequently, our combined computational and experimental approach delivers a robust understanding of the direction of charge separation along with critical time-resolved insights into the evolution of charge transport phenomena in this model heterojunction photocatalyst.

Aluminum oxides as alternative building blocks for efficientlayer-by-layerblocking layers in dye-sensitized solar cells

All inorganic layer-by-layer (LbL) thin films composed by TiO₂nanoparticles and [Al(OH)₄]^-anions (TiO₂/AlO_x) as well as Al₂O₃and Nb₂O₅nanoparticles (Al₂O₃/Nb₂O₅) have been deposited to fluorine-doped tin-oxide coated glass (FTO) surfaces and applied as blocking layers in dye-sensitized solar cells (DSCs). Structural and morphological characterization of the LbL films by different techniques reveal that inTiO₂/AlO_xassembly, aluminate anions undergo condensation reactions on the TiO₂surface leading to the formation of highly homogeneous films with unique optical properties. After 25 depositions transmittance losses below 10% in relation to the bare FTO substrate are observed. Electrochemical impedance spectroscopy shows thatTiO₂/AlO_xlayers impose an effective barrier for the charge recombination at FTO/electrolyte interface with an electron exchange time constant 50-fold higher than that for bare FTO. As a result, an improvement of 85% in the overall conversion efficiency of DSCs was observed with the employment of TiO₂/AlO_xblocking layers.Al₂O₃/Nb₂O₅LbL films can also work as blocking layers in DSCs but not as efficient, which is associated with the poor homogeneity of the film and its capacitive behavior. The production of cost-effective blocking layers with a low light scattering in the visible region is an important feature toward the application of DSC in other Building-integrated photovoltaic applications.

On-Chip Chemiresistive Sensor Array for On-Road NO x Monitoring with Quantification

The adverse effects of air pollution on respiratory health make air quality monitoring with high spatial and temporal resolutions essential especially in cities. Despite considerable interest and efforts, the application of various types of sensors is considered immature owing to insufficient sensitivity and cross-interference under ambient conditions. Here, a fully integrated chemiresistive sensor array (CSA) with parts-per-trillion sensitivity is demonstrated with its application for on-road NO x monitoring. An analytical model is suggested to describe the kinetics of the sensor responses and quantify molecular binding affinities. Finally, the full characterization of the system is connected to implement on-road measurements on NO x vapor with quantification as its ultimate field application. The obtained results suggest that the CSA shows potential as an essential unit to realize an air-quality monitoring network with high spatial and temporal resolutions.

Transparent ZnO Thin-Film Deposition by Spray Pyrolysis for High-Performance Metal-Oxide Field-Effect Transistors

Solution-based metal oxide semiconductors (MOSs) have emerged, with their potential for low-cost and low-temperature processability preserving their intrinsic properties of high optical transparency and high carrier mobility. In particular, MOS field-effect transistors (FETs) using the spray pyrolysis technique have drawn huge attention with the electrical performances compatible with those of vacuum-based FETs. However, further intensive investigations are still desirable, associated with the processing optimization and operational instabilities when compared to other methodologies for depositing thin-film semiconductors. Here, we demonstrate high-performing transparent ZnO FETs using the spray pyrolysis technique, exhibiting a field-effect mobility of ~14.7 cm² V⁻¹ s⁻¹, an on/off ratio of ~10⁹, and an SS of ~0.49 V/decade. We examine the optical and electrical characteristics of the prepared ZnO films formed by spray pyrolysis via various analysis techniques. The influence of spray process conditions was also studied for realizing high quality ZnO films. Furthermore, we measure and analyze time dependence of the threshold voltage (V_th) shifts and their recovery behaviors under prolonged positive and negative gate bias, which were expected to be attributed to defect creation and charge trapping at or near the interface between channel and insulator, respectively.

Optimization of Gas Sensors Based on Advanced Nanomaterials through Split-Plot Designs and GLMMs

This paper deals with the planning and modeling of a split-plot experiment to improve novel gas sensing materials based on Perovskite, a nano-structured, semi-conductor material that is sensitive to changes in the concentration of hazardous gas in the ambient air. The study addresses both applied and theoretical issues. More precisely, it focuses on (i) the detection of harmful gases, e.g., NO 2 and CO, which have a great impact on industrial applications as well as a significantly harmful impact on human health; (ii) the planning and modeling of a split-plot design for the two target gases by applying a dual-response modeling approach in which two models, e.g., location and dispersion models, are estimated; and (iii) a robust process optimization conducted in the final modeling step for each target gas and for each gas sensing material, conditioned to the minimization of the working temperature. The dual-response modeling allows us to achieve satisfactory estimates for the process variables and, at the same time, good diagnostic valuations. Optimal solutions are obtained for each gas sensing material while also improving the results achieved from previous studies.

Large-Area, Ultrathin Metal-Oxide Semiconductor Nanoribbon Arrays Fabricated by Chemical Lift-Off Lithography

Nanoribbon- and nanowire-based field-effect transistors (FETs) have attracted significant attention due to their high surface-to-volume ratios, which make them effective as chemical and biological sensors. However, the conventional nanofabrication of these devices is challenging and costly, posing a major barrier to widespread use. We report a high-throughput approach for producing arrays of ultrathin (∼3 nm) In2O3 nanoribbon FETs at the wafer scale. Uniform films of semiconducting In2O3 were prepared on Si/SiO2 surfaces via a sol-gel process prior to depositing Au/Ti metal layers. Commercially available high-definition digital versatile discs were employed as low-cost, large-area templates to prepare polymeric stamps for chemical lift-off lithography, which selectively removed molecules from self-assembled monolayers functionalizing the outermost Au surfaces. Nanoscale chemical patterns, consisting of one-dimensional lines (200 nm wide and 400 nm pitch) extending over centimeter length scales, were etched into the metal layers using the remaining monolayer regions as resists. Subsequent etch processes transferred the patterns into the underlying In2O3 films before the removal of the protective organic and metal coatings, revealing large-area nanoribbon arrays. We employed nanoribbons in semiconducting FET channels, achieving current on-to-off ratios over 107 and carrier mobilities up to 13.7 cm2 V-1 s-1. Nanofabricated structures, such as In2O3 nanoribbons and others, will be useful in nanoelectronics and biosensors. The technique demonstrated here will enable these applications and expand low-cost, large-area patterning strategies to enable a variety of materials and design geometries in nanoelectronics.

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In₂O₃/ZnO heterojunction. We find that In₂O₃/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In₂O₃ and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In₂O₃ and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants

An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi-2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO channels. Through careful choice of materials combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated.

Chemically Functionalized, Well-Dispersed Carbon Nanotubes in Lithium-Doped Zinc Oxide for Low-Cost, High-Performance Thin-Film Transistors

Surface-functionalized carbon nanotubes (CNTs) are introduced into lithium-doped ZnO thin-film transistors (TFTs) as an alternative to the conventional incorporation of an expensive element, indium. The crucial role of surface functionalization of CNTs is clarified with the demonstration of indium-free ZnO-based TFTs with a field-effect mobility of 28.6 cm(2) V(-1) s(-1) and an on/off current ratio of 9 × 10(6) for low-cost, high-performance electronics.

Monolithic 3D CMOS Using Layered Semiconductors

Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.

Mapping Photoelectrochemical Current Distribution at Nanoscale Dimensions on Morphologically Controlled BiVO4

We develop a method that can be used to qualitatively map photocurrent on photoelectrode surfaces, and show its utility for morphologically controlled W-doped BiVO4. The method is based on the deliberate photoinduced sintering of Au NPs, a photon-driven process that indicates oxidation with nanoscale-resolution. This strategy allows us to identify the active regions on W-doped BiVO4 photoelectrodes, and we observe a strong dependence of photoactivity on the electrode morphology, controlled by varying the relative humidity during the sol-gel fabrication process. We find that photoelectrode morphologies that exhibit the most evenly distributed Au sintering are those that yield the highest photoelectrochemical (PEC) activity. Understanding the correlation between electrode morphology and PEC activity is essential for designing structured semiconductors for PEC water splitting.

Metal oxide semiconductors for dye- and quantum-dot-sensitized solar cells

This Review provides a brief summary of the most recent research developments in the synthesis and application of nanostructured metal oxide semiconductors for dye sensitized and quantum dot sensitized solar cells. In these devices, the wide bandgap semiconducting oxide acts as the photoanode, which provides the scaffold for light harvesters (either dye molecules or quantum dots) and electron collection. For this reason, proper tailoring of the optical and electronic properties of the photoanode can significantly boost the functionalities of the operating device. Optimization of the functional properties relies with modulation of the shape and structure of the photoanode, as well as on application of different materials (TiO2, ZnO, SnO2) and/or composite systems, which allow fine tuning of electronic band structure. This aspect is critical because it determines exciton and charge dynamics in the photoelectrochemical system and is strictly connected to the photoconversion efficiency of the solar cell. The different strategies for increasing light harvesting and charge collection, inhibiting charge losses due to recombination phenomena, are reviewed thoroughly, highlighting the benefits of proper photoanode preparation, and its crucial role in the development of high efficiency dye sensitized and quantum dot sensitized solar cells.