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Nashashibi S, Koepfli SM, Schwanninger R, Baumann M, Doderer M, Bisang D, Fedoryshyn Y, Leuthold J. Engineering Graphene Phototransistors for High Dynamic Range Applications. ACS Nano 2024; 18:12760-12770. [PMID: 38728257 DOI: 10.1021/acsnano.3c11856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2024]
Abstract
Phototransistors are light-sensitive devices featuring a high dynamic range, low-light detection, and mechanisms to adapt to different ambient light conditions. These features are of interest for bioinspired applications such as artificial and restored vision. In this work, we report on a graphene-based phototransistor exploiting the photogating effect that features picowatt- to microwatt-level photodetection, a dynamic range covering six orders of magnitude from 7 to 107 lux, and a responsivity of up to 4.7 × 103 A/W. The proposed device offers the highest dynamic range and lowest optical power detected compared to the state of the art in interfacial photogating and further operates air stably. These results have been achieved by a combination of multiple developments. For example, by optimizing the geometry of our devices with respect to the graphene channel aspect ratio and by introducing a semitransparent top-gate electrode, we report a factor 20-30 improvement in responsivity over unoptimized reference devices. Furthermore, we use a built-in dynamic range compression based on a partial logarithmic optical power dependence in combination with control of responsivity. These features enable adaptation to changing lighting conditions and support high dynamic range operation, similar to what is known in human visual perception. The enhanced performance of our devices therefore holds potential for bioinspired applications, such as retinal implants.
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Affiliation(s)
- Shadi Nashashibi
- ETH Zurich, Institute of Electromagnetic Fields, Zurich 8092, Switzerland
| | - Stefan M Koepfli
- ETH Zurich, Institute of Electromagnetic Fields, Zurich 8092, Switzerland
| | | | - Michael Baumann
- ETH Zurich, Institute of Electromagnetic Fields, Zurich 8092, Switzerland
| | - Michael Doderer
- ETH Zurich, Institute of Electromagnetic Fields, Zurich 8092, Switzerland
| | - Dominik Bisang
- ETH Zurich, Institute of Electromagnetic Fields, Zurich 8092, Switzerland
| | - Yuriy Fedoryshyn
- ETH Zurich, Institute of Electromagnetic Fields, Zurich 8092, Switzerland
| | - Juerg Leuthold
- ETH Zurich, Institute of Electromagnetic Fields, Zurich 8092, Switzerland
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2
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Xu D, Jian P, Liu W, Tan S, Yang Y, Peng M, Dai J, Chen C, Wu F. Vanadium Metal Doping of Monolayer MoS 2 for p-Type Transistors and Fast-Speed Phototransistors. ACS Appl Mater Interfaces 2024. [PMID: 38657168 DOI: 10.1021/acsami.4c03154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Modulating the electrical properties of two-dimensional (2D) materials is a fundamental prerequisite for their development to advanced electronic and optoelectronic devices. Substitutional doping has been demonstrated as an effective method for tuning the band structure in monolayer 2D materials. Here, we demonstrate a facile selective-area growth of vanadium-doped molybdenum disulfide (V-doped MoS2) flakes via pre-patterned vanadium-metal-assisted chemical vapor deposition (CVD). Optical microscopy characterization revealed the presence of flake arrays. Transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy were employed to identify the chemical composition and crystalline structure of as-grown flakes. Electrical measurements indicated a light p-type conduction behavior in monolayer V-doped MoS2. Furthermore, the response time of phototransistors based on V-doped MoS2 monolayers exhibited a remarkable capability of 3 ms, representing approximately 3 orders of magnitude faster response than that observed in pure MoS2 phototransistors. This work hereby provides a feasible approach to doping of 2D materials, promising a scalable pathway for the integration of these materials into emerging electronic and optoelectronic devices.
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Affiliation(s)
- Dan Xu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Pengcheng Jian
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Weijie Liu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Shizhou Tan
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Yiming Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Meng Peng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Jiangnan Dai
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Changqing Chen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Feng Wu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
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Li M, Guan W, Liu C, Xing F, Zheng Y, Di Y, Cao G, Wei S, Wang Y, Yang G, Yu L, Gan Z. Room-Temperature High-Performance Photodetector and Phototransistor Based on PdSe 2/ZnIn 2S 4 Alloy Heterojunctions. Small 2024:e2309499. [PMID: 38624172 DOI: 10.1002/smll.202309499] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Revised: 03/12/2024] [Indexed: 04/17/2024]
Abstract
Various semiconductor devices have been developed based on 2D heterojunction materials owing to their distinctive optoelectronic properties. However, to achieve efficient charge transfer at their interface remains a major challenge. Herein, an alloy heterojunction concept is proposed. The sulfur vacancies in ZnIn2S4 are filled with selenium atoms of PdSe2. This chemically bonded heterojunction can significantly enhance the separation of photocarriers, providing notable advantages in the field of photoelectric conversion. As a demonstration, a two-terminal photodetector based on the PdSe2/ZnIn2S4 heterojunction materials is fabricated. The photodetector exhibits stable operation in ambient conditions, showcasing superior performance in terms of large photocurrent, high responsivity (48.8 mA W-1) and detectivity (1.98 × 1011 Jones). To further validate the excellent optoelectronic performance of the heterojunction, a tri-terminal phototransistor is also fabricated. Benefiting from gate voltage modulation, the photocurrent is amplified to milliampere level, and the responsivity is increased to 229.14 mA W-1. These findings collectively demonstrate the significant potential of the chemically bonded PdSe2/ZnIn2S4 alloy heterojunction for future optoelectronic applications.
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Affiliation(s)
- Mingchao Li
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
| | - Wei Guan
- School of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
| | - Cihui Liu
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
| | - Fangjian Xing
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
| | - Yubin Zheng
- Dalian University of Technology Corporation of Changshu Research Institution, Suzhou, 215500, P. R. China
| | - Yunsong Di
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
| | - Guiyuan Cao
- Nanophotonics Research Center, Shenzhen Key Laboratory of Micro-Scale Optical Information Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shibiao Wei
- Nanophotonics Research Center, Shenzhen Key Laboratory of Micro-Scale Optical Information Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ying Wang
- School of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
| | - Guofeng Yang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi, 214122, P. R. China
| | - Liyan Yu
- School of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
| | - Zhixing Gan
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
- School of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
- Dalian University of Technology Corporation of Changshu Research Institution, Suzhou, 215500, P. R. China
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Kang S, Sohn S, Kim H, Yun HJ, Jang BC, Yoo H. Imitating Synapse Behavior: Exploiting Off-Current in TPBi-Doped Small Molecule Phototransistors for Broadband Wavelength Recognition. ACS Appl Mater Interfaces 2024; 16:11758-11766. [PMID: 38391255 DOI: 10.1021/acsami.3c17855] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/24/2024]
Abstract
Phototransistors have gained significant attention in diverse applications such as photodetectors, image sensors, and neuromorphic devices due to their ability to control electrical characteristics through photoresponse. The choice of photoactive materials in phototransistor research significantly impacts its development. In this study, we propose a novel device that emulates artificial synaptic behavior by leveraging the off-current of a phototransistor. We utilize a p-type organic semiconductor, dinaphtho[2,3-b:2',3'- f]thieno[3,2-b]thiophene (DNTT), as the channel material and dope it with the organic semiconductor 2,2',2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) on the DNTT transistor. Under light illumination, the general DNTT transistor shows no change in off-current, except at 400 nm wavelength, whereas the TPBi-doped DNTT phototransistor exhibits increased off-current across all wavelength bands. Notably, DNTT phototransistors demonstrate broad photoresponse characteristics in the wavelength range of 400-1000 nm. We successfully simulate artificial synaptic behavior by differentiating the level of off-current and achieving a recognition rate of over 70% across all wavelength bands.
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Affiliation(s)
- Seungme Kang
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Sunyoung Sohn
- Department of Semiconductor Energy Engineering, Sangji University, Wonju 26339, Republic of Korea
| | - Hyeran Kim
- Research Center for Materials Analysis, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Hyung Joong Yun
- Advance Nano Research Group, Korea Basic Science Institute (KBSI), Daejeon 34126, Republic of Korea
| | - Byung Chul Jang
- School of Electronics and Electrical Engineering, Kyungpook National University, Bukgu 41566, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
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Choi D, Kwon H, Lee H, Lee KM, Park Y, Moon H, Yoo S. Organic Phototransistor with Light-Induced Contact Modulation and Sensitivity Enhancement Using a C 60/C 70:TAPC Hybrid Channel. ACS Appl Mater Interfaces 2023; 15:58673-58682. [PMID: 38051232 DOI: 10.1021/acsami.3c13498] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Organic phototransistors (OPTs) are attracting a significant degree of interest as devices that have the potential to play multiple roles, including light sensing, signal amplification, and switching for addressing when they are used for matrix arrays. However, it has been challenging to realize OPTs that can perform all of these roles simultaneously at a sufficient performance level because the channel materials with high carrier mobility often exhibit relatively low photoabsorption. In this work, we propose OPTs with a hybrid bilayer channel consisting of a neat C60 layer and a bulk-heterojunction layer of C70 and 1,1-bis(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (TAPC) as a possible solution to this issue. While the C60 layer serves as the main carrier-transporting layer with high mobility, the C70:TAPC layer operates as a photoactive layer wherein the photogenerated carriers provide photoinduced contact modulation that leads to a significant enhancement in photosensitivity. With the optimal design maximizing the absorption, the proposed hybrid-channel OPTs show a responsivity of ca. 180 A/W, which is 4.5 times higher than that of the control OPT with a C70:TAPC single channel. The operation mechanism and the origin for the improvement are verified by an in-depth analysis of the photoinduced modulation of the channel and contact resistances of the OPTs.
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Affiliation(s)
- Dongho Choi
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Hyukyun Kwon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
- Samsung Electronics, Hwaseong-si, Gyeonggido 18448, Republic of Korea
| | - Haechang Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Kyu-Myung Lee
- Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Yongsup Park
- Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, Seoul 02447, Republic of Korea
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Hanul Moon
- Department of Semiconductor & Department of Chemical Engineering (BK21 FOUR Graduate Program), Dong-A University, Busan 49315, Republic of Korea
| | - Seunghyup Yoo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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Jun H, Choi J, Hwang J. Silicon Nanowire Phototransistor Arrays for CMOS Image Sensor Applications. Sensors (Basel) 2023; 23:9824. [PMID: 38139671 PMCID: PMC10748017 DOI: 10.3390/s23249824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2023] [Revised: 12/10/2023] [Accepted: 12/12/2023] [Indexed: 12/24/2023]
Abstract
This paper introduces a new design of silicon nanowire (Si NW) phototransistor (PT) arrays conceived explicitly for improved CMOS image sensor performance, and comprehensive numerical investigations clarify the characteristics of the proposed devices. Each unit within this array architecture features a top-layer vertical Si NW optimized for the maximal absorption of incoming light across the visible spectrum. This absorbed light generates carriers, efficiently injected into the emitter-base junction of an underlying npn bipolar junction transistor (BJT). This process induces proficient amplification of the output collector current. By meticulously adjusting the diameters of the NWs, the PTs are tailored to exhibit distinct absorption characteristics, thus delineating the visible spectrum's blue, green, and red regions. This specialization ensures enriched color fidelity, a sought-after trait in imaging devices. Notably, the synergetic combination of the Si NW and the BJT augments the electrical response under illumination, boasting a quantum efficiency exceeding 10. In addition, by refining parameters like the height of the NW and gradient doping depth, the proposed PTs deliver enhanced color purity and amplified output currents.
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Affiliation(s)
| | | | - Jinyoung Hwang
- The School of Electronics and Information Engineering, Korea Aerospace University, Goyang-si 10540, Republic of Korea; (H.J.); (J.C.)
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7
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Long PX, Lai YY, Kang PH, Chuang CH, Cheng YJ. High photoresponsivity MoS 2phototransistor through enhanced hole trapping HfO 2gate dielectric. Nanotechnology 2023; 35:025204. [PMID: 37816338 DOI: 10.1088/1361-6528/ad01c2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Accepted: 10/09/2023] [Indexed: 10/12/2023]
Abstract
Phototransistor using 2D semiconductor as the channel material has shown promising potential for high sensitivity photo detection. The high photoresponsivity is often attributed to the photogating effect, where photo excited holes are trapped at the gate dielectric interface that provides additional gate electric field to enhance channel charge carrier density. Gate dielectric material and its deposition processing conditions can have great effect on the interface states. Here, we use HfO2gate dielectric with proper thermal annealing to demonstrate a high photoresponsivity MoS2phototransistor. When HfO2is annealed in H2atmosphere, the photoresponsivity is enhanced by an order of magnitude as compared with that of a phototransistor using HfO2without annealing or annealed in Ar atmosphere. The enhancement is attributed to the hole trapping states introduced at HfO2interface through H2annealing process, which greatly enhances photogating effect. The phototransistor exhibits a very large photoresponsivity of 1.1 × 107A W-1and photogain of 3.3 × 107under low light illumination intensity. This study provides a processing technique to fabricate highly sensitive phototransistor for low optical power detection.
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Affiliation(s)
- Pei-Xuan Long
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yung-Yu Lai
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Pei-Hao Kang
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Chi-Huang Chuang
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Yuh-Jen Cheng
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
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8
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Li M, Qin S, Zheng X, Du Q, Liu Y, Li S, Li H, Wang W, Wang F. Gate Controlled Photocurrent Generation Mechanism in Air-Grown Organic Single Crystals for High-Speed Multiband Imaging. ACS Appl Mater Interfaces 2023; 15:48442-48451. [PMID: 37788404 DOI: 10.1021/acsami.3c08058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/05/2023]
Abstract
Organic semiconductors herald new opportunities for fabricating high-performance flexible and wearable optoelectronic devices owing to their intrinsic mechanical flexibility, excellent optical absorption, and cool-free operation. The photocurrent generation mechanisms are of multiple physical origins, including photoconductive, photovoltaic, and photogating effects, and the influence of individual effects on the device figures-of-merit is still not well understood. Here we fabricated a high-performance pentacene single-crystal transistor employing graphene electrodes and demonstrated the modulation from the photogating mechanism to the photoconduction effect by controlling gate bias. Control experiments indicate that the calculation based on transfer curves tends to overestimate the responsivity due to nearby trap states. Using a high frequency-modulated light signal to suppress the trapping process, we successfully measured its intrinsic -3 dB bandwidth of 75 kHz. Finally, high-resolution and UV-NIR high-speed imaging capability was demonstrated. Our work provides new guidelines for understanding the photophysical process and intrinsic performances of organic devices and also confirms the potential of organic single crystals in high-speed imaging applications.
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Affiliation(s)
- Mengru Li
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Shuchao Qin
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Xialian Zheng
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Qianqian Du
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Yunlong Liu
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Shuhong Li
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Huiqin Li
- Bruker (Beijing) Scientific Technology Co. Ltd., Beijing 100081, China
| | - Wenjun Wang
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Fengqiu Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing210093, China
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Chen Y, Zhang M, Li D, Tang Y, Ren H, Li J, Liang K, Wang Y, Wen L, Li W, Kong W, Liu S, Wang H, Wang D, Zhu B. Bidirectional Synaptic Phototransistor Based on Two-Dimensional Ferroelectric Semiconductor for Mixed Color Pattern Recognition. ACS Nano 2023. [PMID: 37345912 DOI: 10.1021/acsnano.3c02167] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Subscribe] [Scholar Register] [Indexed: 06/23/2023]
Abstract
Optoelectronic synaptic devices capable of processing multiwavelength inputs are critical for neuromorphic vision hardware, which remains an important challenge. Here, we develop a bidirectional synaptic phototransistor based on a two-dimensional ferroelectric semiconductor of α-In2Se3, which exhibits bidirectional potentiated and depressed synaptic weight update under optical pulse stimulation. Importantly, the bidirectional optoelectronic synaptic behavior can be extended to multiwavelengths (blue, green, and red light), which could be used for color recognition. The mechanism underlying the bidirectional synaptic characteristics is attributed to the gate-configurable barrier heights as revealed by the Kelvin probe force microscopy measurement. The α-In2Se3 device exhibits versatile synaptic plasticity such as paired-pulse facilitation, short- and long-term potentiation, and long-term depression. The bidirectional optoelectronic synaptic weight updates under multiwavelength inputs enable a high accuracy of 97% for mixed color pattern recognition.
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Affiliation(s)
- Yitong Chen
- School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Min Zhang
- School of Engineering, Westlake University, Hangzhou 310024, China
| | - Dingwei Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Yingjie Tang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Huihui Ren
- School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Jiye Li
- School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Kun Liang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Yan Wang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Liaoyong Wen
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Wenbin Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Wei Kong
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Shi Liu
- School of Science, Westlake University, Hangzhou 310024, Zhejiang, China
| | - Hong Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics Xidian University, Xi'an 710071, China
| | - Donglin Wang
- School of Engineering, Westlake University, Hangzhou 310024, China
| | - Bowen Zhu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
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Dewan S, Khanikar PD, Mudgal R, Singh A, Muduli PK, Singh R, Das S. Large-Area GeSe Realized Using Pulsed Laser Deposition for Ultralow-Noise and Ultrafast Broadband Phototransistors. ACS Appl Mater Interfaces 2023. [PMID: 37216628 DOI: 10.1021/acsami.3c02522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Here, we report on the comprehensive growth, characterization, and optoelectronic application of large-area, two-dimensional germanium selenide (GeSe) layers prepared using the pulsed laser deposition (PLD) technique. Back-gated phototransistors based on few-layered 2D GeSe have been fabricated on a SiO2/Si substrate for ultrafast, low noise, and broadband light detection, showing spectral functionalities over a broad wavelength range of 0.4-1.5 μm. The broadband detection capabilities of the device have been attributed to the self-assembled GeOx/GeSe heterostructure and sub-bandgap absorption in GeSe. Besides a high photoresponsivity of 25 AW-1, the GeSe phototransistor displayed a high external quantum efficiency of the order of 6.14 × 103%, a maximum specific detectivity of 4.16 × 1010 Jones, and an ultralow noise equivalent power of 0.09 pW/Hz1/2. The detector has an ultrafast response/recovery time of 3.2/14.9 μs and can show photoresponse up to a high cut-off frequency of 150 kHz. These promising device parameters exhibited by PLD-grown GeSe layers-based detectors make it a favorable choice against present-day mainstream van der Waals semiconductors with limited scalability and optoelectronic compatibility in the visible-to-infrared spectral range.
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Affiliation(s)
- Sheetal Dewan
- School of Interdisciplinary Research, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Prabal Dweep Khanikar
- University of Queensland-IIT Delhi Academy of Research (UQIDAR), Hauz Khas, New Delhi 110016, India
- Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Richa Mudgal
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Avneet Singh
- Department of Physics, Shivaji College, University of Delhi, New Delhi 110027, India
| | - Pranaba Kishor Muduli
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Rajendra Singh
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Samaresh Das
- Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
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11
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Lee J, Tarsoly G, Shin T, Sim K, Pyo S. Polymer-Gated Transistors with Only One Solution-Processed, Single Crystalline Organic Microwire for Light and Oxygen Detection. ACS Appl Mater Interfaces 2023. [PMID: 37199715 DOI: 10.1021/acsami.3c01785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
Organic semiconductors employed in single crystalline form have several advantages over polycrystalline films, such as higher charge carrier mobility and better environmental stability. Herein, we report the fabrication and characterization of a solution-processed microsized single-crystalline organic wire of n-type N,N'-dipentyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C5). The crystal was applied as an active layer in polymer-gated organic field-effect transistors (OFETs) and organic complementary inverter circuits. The single crystaiiline nature of PTCDI-C5 wires were characterized using two-dimensional grazing incidence wide-angle X-ray diffraction (2D-GIXD) and polarized optical microscopy. OFETs with the PTCDI-C5 crystals exhibited high n-type performance and air stability under ambient conditions. To investigate the electrical properties of the single-crystalline PTCDI-C5 wire more precisely, OFETs with only one PTCDI-C5 microwire in the channel were fabricated, and clear n-type characteristics with satisfactory saturation behavior were observed. The device with only one crystal wire exhibited characteristics with significantly lower variation compared to the multicrystal devices, which shows that the density of crystal wires is a critical factor in precisely investigating device performance. The devices exhibited a reversible threshold voltage shift under vacuum and oxygen conditions, without changing the charge carrier mobility. Light-sensitive characteristics were also observed. Additionally, this solution-processed, highly crystalline organic semiconductor can be used in high-performance organic electronic circuits as well as in gas or light sensors.
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Affiliation(s)
- Junghyun Lee
- Department of Chemistry, Konkuk University, 120 Neungdong-ro, Gwangjin-gu, Seoul 05029, Republic of Korea
| | - Gergely Tarsoly
- Department of Chemistry, Konkuk University, 120 Neungdong-ro, Gwangjin-gu, Seoul 05029, Republic of Korea
| | - Taejoo Shin
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Kyoseung Sim
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Seungmoon Pyo
- Department of Chemistry, Konkuk University, 120 Neungdong-ro, Gwangjin-gu, Seoul 05029, Republic of Korea
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12
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Andleeb S, Wang X, Dong H, Valligatla S, Saggau CN, Ma L, Schmidt OG, Zhu F. Fast-Response Micro- Phototransistor Based on MoS 2/Organic Molecule Heterojunction. Nanomaterials (Basel) 2023; 13:nano13091491. [PMID: 37177036 PMCID: PMC10180112 DOI: 10.3390/nano13091491] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Revised: 04/21/2023] [Accepted: 04/24/2023] [Indexed: 05/15/2023]
Abstract
Over the past years, molybdenum disulfide (MoS2) has been the most extensively studied two-dimensional (2D) semiconductormaterial. With unique electrical and optical properties, 2DMoS2 is considered to be a promising candidate for future nanoscale electronic and optoelectronic devices. However, charge trapping leads to a persistent photoconductance (PPC), hindering its use for optoelectronic applications. To overcome these drawbacks and improve the optoelectronic performance, organic semiconductors (OSCs) are selected to passivate surface defects, tune the optical characteristics, and modify the doping polarity of 2D MoS2. Here, we demonstrate a fast photoresponse in multilayer (ML) MoS2 by addressing a heterojunction interface with vanadylphthalocyanine (VOPc) molecules. The MoS2/VOPc van der Waals interaction that has been established encourages the PPC effect in MoS2 by rapidly segregating photo-generated holes, which move away from the traps of MoS2 toward the VOPc molecules. The MoS2/VOPc phototransistor exhibits a fast photo response of less than 15 ms for decay and rise, which is enhanced by 3ordersof magnitude in comparison to that of a pristine MoS2-based phototransistor (seconds to tens of seconds). This work offers a means to realize high-performance transition metal dichalcogenide (TMD)-based photodetection with a fast response speed.
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Affiliation(s)
- Shaista Andleeb
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107 Chemnitz, Germany
- Leibniz-Institute für Festköper- und Werkstoffforschung Dresden, 01069 Dresden, Germany
- Research Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126 Chemnitz, Germany
| | - Xiaoyu Wang
- Leibniz-Institute für Festköper- und Werkstoffforschung Dresden, 01069 Dresden, Germany
- Department of Physics, School of Science, Hainan University, Haikou 570228, China
| | - Haiyun Dong
- Leibniz-Institute für Festköper- und Werkstoffforschung Dresden, 01069 Dresden, Germany
| | - Sreeramulu Valligatla
- Leibniz-Institute für Festköper- und Werkstoffforschung Dresden, 01069 Dresden, Germany
| | - Christian Niclaas Saggau
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107 Chemnitz, Germany
- Leibniz-Institute für Festköper- und Werkstoffforschung Dresden, 01069 Dresden, Germany
- Research Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126 Chemnitz, Germany
| | - Libo Ma
- Leibniz-Institute für Festköper- und Werkstoffforschung Dresden, 01069 Dresden, Germany
| | - Oliver G Schmidt
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107 Chemnitz, Germany
- Leibniz-Institute für Festköper- und Werkstoffforschung Dresden, 01069 Dresden, Germany
- Research Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126 Chemnitz, Germany
- School of Science, Dresden University of Technology, 01069 Dresden, Germany
| | - Feng Zhu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
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13
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Li J, Guo Q, Tao Y, Li D, Yang Y, Zhou D, Pan J, Liu X, Tao Z. A Fast-Response Ultraviolet Phototransistor with a PVK QDs/ZnO Nanowire Heterostructure and Its Application in Pharmaceutical Solute Detection. Nanomaterials (Basel) 2023; 13:1364. [PMID: 37110949 PMCID: PMC10142717 DOI: 10.3390/nano13081364] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 04/06/2023] [Accepted: 04/11/2023] [Indexed: 06/19/2023]
Abstract
The sensitivity and photoelectric noise of UV photodetectors are challenges that need to be overcome in pharmaceutical solute detection applications. This paper presents a new device concept for a CsPbBr3 QDs/ZnO nanowire heterojunction structure for phototransistors. The lattice match of the CsPbBr3 QDs and ZnO nanowire reduces the generation of trap centers and avoids carrier absorption by the composite center, which greatly improves the carrier mobility and high detectivity (8.13 × 1014 Jones). It is worth noting that by using high-efficiency PVK quantum dots as the intrinsic sensing core, the device has a high responsivity (6381 A/W) and responsivity frequency (300 Hz). Thus, a UV detection system for pharmaceutical solute detection is demonstrated, and the type of solute in the chemical solution is estimated by the waveform and the size of the output 2f signals.
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Affiliation(s)
- Jiajun Li
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Qihua Guo
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Ye Tao
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Dalin Li
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Yiting Yang
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Dandan Zhou
- College of Light Industry and Food Engineering, Nanjing Forestry University, Nanjing 210037, China
| | - Jiangyong Pan
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Xiang Liu
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Zhi Tao
- School of Electronics & Information Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
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14
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Pan R, Cai Y, Zhang F, Wang S, Chen L, Feng X, Ha Y, Zhang R, Pu M, Li X, Ma X, Luo X. High Performance Graphene-C 60 -Bismuth Telluride-C 60 -Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses. Adv Sci (Weinh) 2023; 10:e2206997. [PMID: 36748286 PMCID: PMC10074057 DOI: 10.1002/advs.202206997] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Revised: 01/12/2023] [Indexed: 06/18/2023]
Abstract
Graphene is a promising candidate for the next-generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process. However, it is difficult to simultaneously obtain ultrafast response time and ultrahigh responsivity, which limits the further improvement of graphene photoconductive devices. Here, a novel graphene/C60 /bismuth telluride/C60 /graphene vertical heterojunction phototransistor is proposed. The response spectral range covers 400-1800 nm; the responsivity peak is 106 A W-1 ; and the peak detection rate and peak response speed reach 1014 Jones and 250 µs, respectively. In addition, the regulation of positive and negative photocurrents at a gate voltage is characterized and the ionization process in impurities of the designed phototransistor at a low temperature is analyzed. Tunable bidirectional response provides a new degree of freedom for phototransistors' signal resolution. The analysis of the dynamic change process of impurity energy level is conducted to improve the device's performance. From the perspective of manufacturing process, the ultrathin phototransistor (20-30 nm) is compatible with functional metasurface to realize wavelength or polarization selection, making it possible to achieve large-scale production of integrated spectrometer or polarization imaging sensor by nanoimprinting process.
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Affiliation(s)
- Rui Pan
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Yuanlingyun Cai
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Feifei Zhang
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Si Wang
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Lianwei Chen
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Xingdong Feng
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Yingli Ha
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
- Research Center on Vector Optical FieldsInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Renyan Zhang
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Mingbo Pu
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
- Research Center on Vector Optical FieldsInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
| | - Xiong Li
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Xiaoliang Ma
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
| | - Xiangang Luo
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209P. R. China
- School of OptoelectronicsUniversity of Chinese Academy of SciencesBeijing100049P. R. China
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15
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Wang Z, Wei L, Wang S, Wu T, Sun L, Ma C, Tao X, Wang S. 2D SiP 2/h-BN for a Gate-Controlled Phototransistor with Ultrahigh Sensitivity. ACS Appl Mater Interfaces 2023; 15:15810-15818. [PMID: 36939047 DOI: 10.1021/acsami.2c19803] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials are extremely attractive for the construction of highly sensitive photodetectors due to their unique electronic and optical properties. However, developing 2D photodetectors with ultrahigh sensitivity for extremely low-light-level detection is still a challenge owing to the limitation of high dark current and low detectivity. Herein, a gate-controlled phototransistor based on 2D SiP2/hexagonal boron nitride (h-BN) was rationally designed and demonstrated ultrahigh sensitivity for the first time. With a back-gate device geometry, the SiP2/h-BN phototransistor exhibits an ultrahigh detectivity of 3.4 × 1013 Jones, which is one of the highest values among 2D material-based photodetectors. In addition, the phototransistor also shows a gate tunable responsivity of ≤43.5 A/W at a gate voltage of 30 V due to the photogating effect. The ultrahigh sensitivity of the SiP2-based phototransistor is attributed to the extremely low dark current suppressed by the phototransistor configuration and the improved photocurrent by using h-BN as a substrate to reduce charge scattering. This work provides a facile strategy for improving the detectivity of photodetectors and validates the great potential of 2D SiP2 phototransistors for ultrasensitive optoelectronic applications.
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Affiliation(s)
- Ziming Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Limei Wei
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Shilei Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Tiange Wu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Lanjing Sun
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Chao Ma
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Xutang Tao
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Shanpeng Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
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16
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Ellakany A, Zekry A, Abouelatta M, Shaker A, Sayah GT, El-Banna MM. Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector. Materials (Basel) 2023; 16:2637. [PMID: 37048931 PMCID: PMC10095979 DOI: 10.3390/ma16072637] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 02/26/2023] [Accepted: 03/08/2023] [Indexed: 06/19/2023]
Abstract
Recently, nanowire detectors have been attracting increasing interest thanks to their advantages of high resolution and gain. The potential of using nanowire detectors is investigated in this work by developing a physically based model for Indium Phosphide (InP) phototransistor as well as by performing TCAD simulations. The model is based on solving the basic semiconductor equations for bipolar transistors and considering the effects of charge distribution on the bulk and on the surface. The developed model also takes into consideration the impact of surface traps, which are induced by photogenerated carriers situated at the surface of the nanowire. Further, photogating phenomena and photodoping are also included. Moreover, displacement damage (DD) is also investigated; an issue arises when the detector is exposed to repeated doses. The presented analytical model can predict the current produced from the incident X-ray beam at various energies. The calculation of the gain of the presented nanowire carefully considers the different governing effects at several values of energies as well as biasing voltage and doping. The proposed model is built in MATLAB, and the validity check of the model results is achieved using SILVACO TCAD device simulation. Comparisons between the proposed model results and SILVACO TCAD device simulation are provided and show good agreement.
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Affiliation(s)
- Abdelhady Ellakany
- Electronics and Communication Engineering Department, Faculty of Engineering, Ain Shams University, Cairo 11517, Egypt
| | - Abdelhalim Zekry
- Electronics and Communication Engineering Department, Faculty of Engineering, Ain Shams University, Cairo 11517, Egypt
| | - Mohamed Abouelatta
- Electronics and Communication Engineering Department, Faculty of Engineering, Ain Shams University, Cairo 11517, Egypt
| | - Ahmed Shaker
- Engineering Physics and Mathematics Department, Faculty of Engineering, Ain Shams University, Cairo 11517, Egypt
| | - Gihan T. Sayah
- Electronic Engineering Department, Nuclear Material Authority, Cairo 11381, Egypt
| | - Mohamed M. El-Banna
- Engineering Physics and Mathematics Department, Faculty of Engineering, Ain Shams University, Cairo 11517, Egypt
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17
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Canton-Vitoria R, Hotta T, Xue M, Zhang S, Kitaura R. Synthesis and Characterization of Transition Metal Dichalcogenide Nanoribbons Based on a Controllable O 2 Etching. JACS Au 2023; 3:775-784. [PMID: 37006761 PMCID: PMC10052231 DOI: 10.1021/jacsau.2c00536] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Revised: 12/17/2022] [Accepted: 12/19/2022] [Indexed: 06/18/2023]
Abstract
Although the synthesis of monolayer transition metal dichalcogenides has been established in the last decade, synthesizing nanoribbons remains challenging. In this study, we have developed a straightforward method to obtain nanoribbons with controllable widths (25-8000 nm) and lengths (1-50 μm) by O2 etching of the metallic phase in metallic/semiconducting in-plane heterostructures of monolayer MoS2. We also successfully applied this process for synthesizing WS2, MoSe2, and WSe2 nanoribbons. Furthermore, field-effect transistors of the nanoribbons show an on/off ratio of larger than 1000, photoresponses of 1000%, and time responses of 5 s. The nanoribbons were compared with monolayer MoS2, highlighting a substantial difference in the photoluminescence emission and photoresponses. Additionally, the nanoribbons were used as a template to build one-dimensional (1D)-1D or 1D-2D heterostructures with various transition metal dichalcogenides. The process developed in this study offers simple production of nanoribbons with applications in several fields of nanotechnology and chemistry.
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Affiliation(s)
- Ruben Canton-Vitoria
- Department
of Chemistry, Nagoya University, Furo-Cho, Nagoya, Aichi 464-8602, Japan
- Theoretical
and Physical Chemistry Institute, National
Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens 116 35, Greece
| | - Takato Hotta
- Department
of Chemistry, Nagoya University, Furo-Cho, Nagoya, Aichi 464-8602, Japan
| | - Mengsong Xue
- Department
of Chemistry, Nagoya University, Furo-Cho, Nagoya, Aichi 464-8602, Japan
| | - Shaochun Zhang
- Department
of Chemistry, Nagoya University, Furo-Cho, Nagoya, Aichi 464-8602, Japan
| | - Ryo Kitaura
- Department
of Chemistry, Nagoya University, Furo-Cho, Nagoya, Aichi 464-8602, Japan
- International
Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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18
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Zeng YH, Chu FJ, Shih LC, Chen YC, Chen JS. Dual Light Temporal Coding Modes Enabled by Nanoparticle-Mediated Phototransistors via Gate Bias Modulation for Brain-Inspired Visual Perception. ACS Appl Mater Interfaces 2023; 15:9563-9573. [PMID: 36752393 DOI: 10.1021/acsami.2c18699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The core integration and cooperation of the retina, neurons, and synapses in the visual systems enable humans to effectively sense and process visual information with low power consumption. To mimic the human visual system, an artificial sensory nerve, along with optical sensing─a paired-pulse ratio (PPR) of the light pulse stimulated currents─and neural coding has been developed. For performing the artificial visual perception functions, we consistently reveal the positive and negative correlations between the PPR index and light pulse time interval by applying two consecutive light stimuli with gate voltages of -10 and 5 V, respectively, to a phototransistor. This phototransistor contains a heterostructured channel layer composed of zinc-oxide nanoparticles (ZnO NPs) interconnected with a solution-processed zinc-tin oxide (ZTO) film. The oxygen adsorption and desorption on the ZnO NP surface under light illumination are responsible for the positive-sloped PPR; the electron trapping effect at the ZnO NP/SiO2 interface is attributed to the negative-sloped PPR. The various accountable light power densities and number of surface trap states are considered to be directly realizing these spike-timing interval-dependent characteristics. The actual benefit of these characteristics is the dual temporal coding modes based on multiplicative operation using a ZTO/ZnO NP phototransistor realized via the active gate voltage modulation. The contrary tendency of the PPR index and temporal coding─a major biological neural coding─is well demonstrated by the potential of ZTO/ZnO NP phototransistors to be implemented in sensor networks for an artificial visual perception.
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Affiliation(s)
- Yun-Huei Zeng
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Fang-Jui Chu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Li-Chung Shih
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Yu-Chieh Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Jen-Sue Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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19
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Tong T, Gan Y, Li W, Zhang W, Song H, Zhang H, Liao K, Deng J, Li S, Xing Z, Yu Y, Tu Y, Wang W, Chen J, Zhou J, Song X, Zhang L, Wang X, Qin S, Shi Y, Huang W, Wang L. Boosting the Sensitivity of WSe 2 Phototransistor via Janus Interfaces with 2D Perovskite and Ferroelectric Layers. ACS Nano 2023; 17:530-538. [PMID: 36547249 DOI: 10.1021/acsnano.2c09284] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Hybrid systems have recently attracted increasing attention, which combine the special attributes of each constitute and create interesting functionalities through multiple heterointerface interactions. Here, we design a two-dimensional (2D) hybrid phototransistor utilizing Janus-interface engineering, in which the WSe2 channel combines light-sensitive perovskite and spontaneously polarized ferroelectrics, achieving collective ultrasensitive detection performance. The top perovskite (BA2(MA)3Pb4I13) layer can absorb the light efficiently and provide generous photoexcited holes to WSe2. WSe2 exhibit p-type semiconducting states of different degrees due to the selective light-operated doping effect, which also enables the ultrahigh photocurrent of the device. The bottom ferroelectric (Hf0.5Zr0.5O2) layer dramatically decreases the dark current, which should be attributed to the ferroelectric polarization assisted charge trapping effect and improved gate control. As a whole, our phototransistors show excellent photoelectric performances across the ultraviolet to near-infrared range (360-1050 nm), including an ultrahigh ON/OFF current ratio > 109 and low noise-equivalent power of 1.3 fW/Hz1/2, all of which are highly competitive in 2D semiconductor-based optoelectronic devices. In particular, the devices show excellent weak light detection ability, where the distinguishable photoswitching signal is obtained even under a record-low light intensity down to 1.6 nW/cm2, while showing a high responsivity of 2.3 × 105 A/W and a specific detectivity of 4.1 × 1014 Jones. Our work demonstrates that Janus-interface design makes the upper and lower interfaces complement each other for the joint advancement into high-performance optoelectronic applications, providing a picture to realize the integrated engineering on carrier dynamics by light irradiation, electric field, interfacial trapping, and band alignment.
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Affiliation(s)
- Tong Tong
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing211816, China
| | - Yuquan Gan
- School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Weisheng Li
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Wei Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Haizeng Song
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Hehe Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Kan Liao
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Jie Deng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
| | - Si Li
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Ziyue Xing
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an710072, China
| | - Yu Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
| | - Yudi Tu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen518060, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing211189, China
| | - Jinlian Chen
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Jing Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
| | - Xuefen Song
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Linghai Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Shuchao Qin
- School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Yi Shi
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an710072, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
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20
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Dodda A, Jayachandran D, Subbulakshmi Radhakrishnan S, Pannone A, Zhang Y, Trainor N, Redwing JM, Das S. Bioinspired and Low-Power 2D Machine Vision with Adaptive Machine Learning and Forgetting. ACS Nano 2022; 16:20010-20020. [PMID: 36305614 DOI: 10.1021/acsnano.2c02906] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Natural intelligence has many dimensions, with some of its most important manifestations being tied to learning about the environment and making behavioral changes. In primates, vision plays a critical role in learning. The underlying biological neural networks contain specialized neurons and synapses which not only sense and process visual stimuli but also learn and adapt with remarkable energy efficiency. Forgetting also plays an active role in learning. Mimicking the adaptive neurobiological mechanisms for seeing, learning, and forgetting can, therefore, accelerate the development of artificial intelligence (AI) and bridge the massive energy gap that exists between AI and biological intelligence. Here, we demonstrate a bioinspired machine vision system based on a 2D phototransistor array fabricated from large-area monolayer molybdenum disulfide (MoS2) and integrated with an analog, nonvolatile, and programmable memory gate-stack; this architecture not only enables dynamic learning and relearning from visual stimuli but also offers learning adaptability under noisy illumination conditions at miniscule energy expenditure. In short, our demonstrated "all-in-one" hardware vision platform combines "sensing", "computing", and "storage" to not only overcome the von Neumann bottleneck of conventional complementary metal-oxide-semiconductor (CMOS) technology but also to eliminate the need for peripheral circuits and sensors.
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Affiliation(s)
- Akhil Dodda
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Darsith Jayachandran
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | | | - Andrew Pannone
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Yikai Zhang
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Nicholas Trainor
- Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, Penn State University, University Park, Pennsylvania 16802, United States
| | - Saptarshi Das
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
- Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, Penn State University, University Park, Pennsylvania 16802, United States
- Electrical Engineering and Computer Science, Penn State University, University Park, Pennsylvania 16802, United States
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21
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Kim JH, Stolte M, Würthner F. Wavelength and Polarization Sensitive Synaptic Phototransistor Based on Organic n-type Semiconductor/Supramolecular J-Aggregate Heterostructure. ACS Nano 2022; 16:19523-19532. [PMID: 36356301 DOI: 10.1021/acsnano.2c09747] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Human retina- and brain-inspired optoelectronic synapses, which integrate light detection and signal memory functions for data processing, have significant interest because of their potential applications for artificial vision technology. In nature, many animals such as mantis shrimp use polarized light information as well as scalar information including wavelength and intensity; however, a spectropolarimetric organic optoelectronic synapse has been seldom investigated. Herein, we report an organic synaptic phototransistor, consisting of a charge trapping liquid-crystalline perylene bisimide J-aggregate and a charge transporting crystalline dichlorinated naphthalene diimide, that can detect both wavelength and polarization information. The device shows persistent positive and negative photocurrents under low and high voltage conditions, respectively. Furthermore, the aligned organic heterostructure in the thin-film enables linearly polarized light to be absorbed with a dichroic ratio of 1.4 and 3.7 under transverse polarized blue and red light illumination, respectively. These features allow polarized light sensitive postsynaptic functions in the device. Consequently, a simple polarization imaging sensor array is successfully demonstrated using photonic synapses, which suggests that a supramolecular material is an important candidate for the development of spectropolarimetric neuromorphic vision systems.
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Affiliation(s)
- Jin Hong Kim
- Center for Nanosystems Chemistry (CNC) and Bavarian Polymer Institute (BPI), Universität Würzburg, 97074 Würzburg, Germany
| | - Matthias Stolte
- Center for Nanosystems Chemistry (CNC) and Bavarian Polymer Institute (BPI), Universität Würzburg, 97074 Würzburg, Germany
- Institut für Organische Chemie, Universität Würzburg, 97074 Würzburg, Germany
| | - Frank Würthner
- Center for Nanosystems Chemistry (CNC) and Bavarian Polymer Institute (BPI), Universität Würzburg, 97074 Würzburg, Germany
- Institut für Organische Chemie, Universität Würzburg, 97074 Würzburg, Germany
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22
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Zhang C, Xu C, Chen C, Cheng J, Zhang H, Ni F, Wang X, Zou G, Qiu L. Optically Programmable Circularly Polarized Photodetector. ACS Nano 2022; 16:12452-12461. [PMID: 35938975 DOI: 10.1021/acsnano.2c03746] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The detection of circularly polarized light (CPL) has aroused wide attention from both the scientific and industrial communities. However, from the optical activity of the chiral layer in the conventional CPL photodetectors, the sign inversion property is difficult to be achieved. As a result, great challenges arise during the preparation of miniaturized and integrated devices for tunable CPL detection applications. Along these lines, in this work, by taking advantage of the CPL-induced chirality characteristics of the achiral poly(9,9-di-n-hexylfluorene-alt-benzothiadiazole) (F6BT) and the good crystalline and electrical properties of the poly(3-hexylthiophene) (P3HT) film, an optically programmable CPL photodetector was fabricated. Interestingly, the device exhibited excellent discrimination between left- and right-handed CPL, while the maximum anisotropy factor of responsivity was 0.425. On top of that, the rigorously controlled chirality of the F6BT and the capability to be switched by the handedness of CPL was leveraged to realize the switchable detection of both L-CPL and R-CPL. Furthermore, a CPL photodetector array was fabricated, and the image processing and cryptographic characteristics were demonstrated. The proposed device configuration can find application in various scientific fields, including photonics, emission, conversion, or sensing with CPL but also is anticipated to play a key role for imaging and anticounterfeiting applications.
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Affiliation(s)
- Can Zhang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, China
| | - Chenyin Xu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China
| | - Cuifen Chen
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China
| | - Junjie Cheng
- CAS Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, iChEM, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Hongli Zhang
- CAS Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, iChEM, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Fan Ni
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, China
| | - Gang Zou
- CAS Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, iChEM, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, China
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23
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Mukherjee S, Bhattacharya D, Ray SK, Pal AN. High-Performance Broad-Band Photodetection Based on Graphene-MoS 2xSe 2(1-x) Alloy Engineered Phototransistors. ACS Appl Mater Interfaces 2022; 14:34875-34883. [PMID: 35880297 DOI: 10.1021/acsami.2c08933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The concept of alloy engineering has emerged as a viable technique toward tuning the band gap as well as engineering the defect levels in two-dimensional transition-metal dichalcognides (TMDCs). The possibility of synthesizing these ultrathin TMDC materials through a chemical route has opened up realistic possibilities to fabricate hybrid multifunctional devices. By synthesizing nanosheets with different composites of MoS2xSe2(1-x) (x = 0 - 1) using simple chemical methods, we systematically investigate the photoresponse properties of three terminal hybrid devices by decorating large-area graphene with these nanosheets (x = 0, 0.5, 1) in 2D-2D configurations. Among them, the graphene-MoSSe hybrid phototransistor exhibits optoelectronic properties superior to those of its binary counterparts. The device exhibits extremely high photoresponsivity (>104 A/W), low noise equivalent power (∼10-14 W/Hz0.5), and higher specific detectivity (∼1011 jones) in the wide UV-NIR (365-810 nm) range with excellent gate tunability. The broad-band light absorption of MoSSe, ultrafast charge transport in graphene, and controllable defect engineering in MoSSe makes this device extremely attractive. Our work demonstrates the large-area scalability with the wafer-scale production of MoS2xSe2(1-x) alloys, having important implications toward the facile and scalable fabrication of high-performance optoelectronic devices and providing important insights into the fundamental interactions between van der Waals materials.
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Affiliation(s)
- Shubhrasish Mukherjee
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake 700106, Kolkata, India
| | - Didhiti Bhattacharya
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake 700106, Kolkata, India
| | - Samit Kumar Ray
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake 700106, Kolkata, India
- Indian Institute of Technology Kharagpur, Kharagpur 721302, West Bengal, India
| | - Atindra Nath Pal
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake 700106, Kolkata, India
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24
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Islam MM, Krishnaprasad A, Dev D, Martinez-Martinez R, Okonkwo V, Wu B, Han SS, Bae TS, Chung HS, Touma J, Jung Y, Roy T. Multiwavelength Optoelectronic Synapse with 2D Materials for Mixed-Color Pattern Recognition. ACS Nano 2022; 16:10188-10198. [PMID: 35612988 DOI: 10.1021/acsnano.2c01035] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Neuromorphic visual systems emulating biological retina functionalities have enormous potential for in-sensor computing, with prospects of making artificial intelligence ubiquitous. Conventionally, visual information is captured by an image sensor, stored by memory units, and eventually processed by the machine learning algorithm. Here, we present an optoelectronic synapse device with multifunctional integration of all the processes required for real time object identification. Ultraviolet-visible wavelength-sensitive MoS2 FET channel with infrared sensitive PtTe2/Si gate electrode enables the device to sense, store, and process optical data for a wide range of the electromagnetic spectrum, while maintaining a low dark current. The device exhibits optical stimulation-controlled short-term and long-term potentiation, electrically driven long-term depression, synaptic weight update for multiple wavelengths of light ranging from 300 nm in ultraviolet to 2 μm in infrared. An artificial neural network developed using the extracted weight update parameters of the device can be trained to identify both single wavelength and mixed wavelength patterns. This work demonstrates a device that could potentially be used for realizing a multiwavelength neuromorphic visual system for pattern recognition and object identification.
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Affiliation(s)
- Molla Manjurul Islam
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Physics, University of Central Florida, Orlando, Florida 32816, United States
| | - Adithi Krishnaprasad
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Durjoy Dev
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Ricardo Martinez-Martinez
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Victor Okonkwo
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Benjamin Wu
- Department of Applied Mathematics and Statistics, Stony Brook University, Stony Brook, New York 11794, United States
| | - Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Tae-Sung Bae
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea
| | - Hee-Suk Chung
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea
| | - Jimmy Touma
- Air Force Research Lab, Eglin Air Force Base, Florida 32542, United States
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Tania Roy
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Physics, University of Central Florida, Orlando, Florida 32816, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States
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25
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Wang W, Wang W, Meng Y, Quan Q, Lai Z, Li D, Xie P, Yip S, Kang X, Bu X, Chen D, Liu C, Ho JC. Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS 2 Heterojunctions. ACS Nano 2022; 16:11036-11048. [PMID: 35758898 DOI: 10.1021/acsnano.2c03673] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS2 nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 104, fast response of 50 μs, and high detectivity of 1.64 × 1011 Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.
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Affiliation(s)
- Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Quan Quan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
| | - Xiaolin Kang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Xiuming Bu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Dong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Chuntai Liu
- Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education, Zhengzhou 450002, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
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26
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Kim KS, Kim MS, Chung J, Kim D, Lee IS, Kim HJ. Polyimide-Doped Indium-Gallium-Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection. ACS Appl Mater Interfaces 2022; 14:21150-21158. [PMID: 35482003 DOI: 10.1021/acsami.2c01769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We report a transparent and flexible polyimide (PI)-doped single-layer (PSL) phototransistor for the detection of visible light. The PSL was deposited on a SiO2 gate insulator by a co-sputtering process using amorphous indium-gallium-zinc oxide (IGZO) and PI targets simultaneously. The PSL acted as both a channel layer and a visible-light absorption layer. PI is one of the few flexible organic materials that can be fabricated into sputtering targets. Compared with the IGZO phototransistor without PI doping, the PSL phototransistor exhibited improved optoelectronic characteristics under illumination with 635 nm red light of 1 mW/mm2 intensity; the obtained photoresponsivity ranged from 15.00 to 575.00 A/W, the photosensitivity from 1.38 × 101 to 9.86 × 106, and the specific detectivity from 1.35 × 107 to 5.83 × 1011 Jones. These improvements are attributed to subgap states induced by the PI doping, which formed decomposed organic molecules, oxygen vacancies, and metal hydroxides. Furthermore, a flexible PSL phototransistor was fabricated and showed stable optoelectronic characteristics even after 10,000 bending tests.
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Affiliation(s)
- Ki Seok Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
- LG Display Co., Ltd., 245, LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
| | - Min Seong Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Jusung Chung
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Dongwoo Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - I Sak Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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27
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Mukherjee S, Bhattacharya D, Patra S, Paul S, Mitra RK, Mahadevan P, Pal AN, Ray SK. High-Responsivity Gate-Tunable Ultraviolet-Visible Broadband Phototransistor Based on Graphene-WS 2 Mixed-Dimensional (2D-0D) Heterostructure. ACS Appl Mater Interfaces 2022; 14:5775-5784. [PMID: 35068147 DOI: 10.1021/acsami.1c18999] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition-metal dichalcogenide (TMDC) quantum dots (QDs) with their broadband absorption spectra and wavelength selectivity features have led to their increasing use in broadband photodetectors. With the solution-based processing, we demonstrate a superlarge (∼0.75 mm2), ultraviolet-visible (UV-vis) broadband (365-633 nm) phototransistor made of WS2 QDs-decorated chemical vapor deposited (CVD) graphene as the active channel with extraordinary stability and durability under ambient conditions (without any degradation of photocurrent until 4 months after fabrication). Here, colloidal zero-dimensional (0D) WS2 QDs are used as the photoabsorbing material, and graphene acts as the conducting channel. A high photoresponsivity (3.1 × 102 A/W), moderately high detectivity (∼8.9 × 108 Jones), and low noise equivalent power (∼9.7 × 10-11 W/Hz0.5) are obtained at a low bias voltage (Vds = 1 V) at an illumination of 365 nm with optical power as low as ∼0.8 μW/cm2, which can be further tuned by modulating the gate bias. While comparing the photocurrent between two different morphologies of WS2 [QDs and two-dimensional (2D) nanosheets], a significant enhancement of photocurrent is observed in the case of QD-based devices. Ab initio density functional theory (DFT)-based calculations further support our observation, revealing the role of quantum confinement in enhanced photoresponse. Our work reveals a strategy toward developing a scalable, cost-effective, high-performance hybrid mixed-dimensional (2D-0D) photodetector with graphene-WS2 QDs for next-generation optoelectronic applications.
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Affiliation(s)
- Shubhrasish Mukherjee
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Didhiti Bhattacharya
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Sumanti Patra
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Sanjukta Paul
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Rajib Kumar Mitra
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Priya Mahadevan
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Atindra Nath Pal
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Samit Kumar Ray
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
- Indian Institute of Technology Kharagpur, 721302 West Bengal, India
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28
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Xu H, Kim T, Han H, Kim MJ, Hur JS, Choi CH, Chang JH, Jeong JK. High-Performance Broadband Phototransistor Based on TeO x/IGTO Heterojunctions. ACS Appl Mater Interfaces 2022; 14:3008-3017. [PMID: 35000384 DOI: 10.1021/acsami.1c18576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ultraviolet to infrared broadband spectral detection capability is a technological challenge for sensing materials being developed for high-performance photodetection. In this work, we stacked 9 nm-thick tellurium oxide (TeOx) and 8 nm-thick InGaSnO (IGTO) into a heterostructure at a low temperature of 150 °C. The superior photoelectric characteristics we achieved benefit from the intrinsic optical absorption range (300-1500 nm) of the hexagonal tellurium (Te) phase in the TeOx film, and photoinduced electrons are driven effectively by band alignment at the TeOx/IGTO interface under illumination. A photosensor based on our optimized heterostructure exhibited a remarkable detectivity of 1.6 × 1013 Jones, a responsivity of 84 A/W, and a photosensitivity of 1 × 105, along with an external quantum efficiency of 222% upon illumination by blue light (450 nm). Simultaneously, modest detection properties (responsivity: ∼31 A/W, detectivity: ∼6 × 1011 Jones) for infrared irradiation at 970 nm demonstrate that this heterostructure can be employed as a broadband phototransistor. Furthermore, its low-temperature processability suggests that our proposed concept might be used to design array optoelectronic devices for wide band detection with high sensitivity, flexibility, and stability.
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Affiliation(s)
- Hongwei Xu
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Taikyu Kim
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - HeeSung Han
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Min Jae Kim
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Seok Hur
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Cheol Hee Choi
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Joon-Hyuk Chang
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Kyeong Jeong
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
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Salikhov RB, Mustafin AG, Mullagaliev IN, Salikhov TR, Andriianova AN, Latypova LR, Sharafullin IF. Photoconductivity of Thin Films Obtained from a New Type of Polyindole. Materials (Basel) 2021; 15:ma15010228. [PMID: 35009374 PMCID: PMC8746277 DOI: 10.3390/ma15010228] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 12/20/2021] [Accepted: 12/26/2021] [Indexed: 11/16/2022]
Abstract
The optoelectronic properties of a new poly(2-ethyl-3-methylindole) (MPIn) are discussed in this paper. The absorption and photoluminescence spectra were studied. The electronic spectrum of MPIn showed a single absorption maximum at 269 nm that is characteristic of the entire series of polyindoles. The fluorescence spectra show that the emission peaks of the test sample are centered around 520 nm. The photoconductivity of thin film samples of MPIn polyindole was studied by measuring the current-voltage characteristics under ultraviolet radiation with a wavelength of 350 nm. Samples of phototransistors were obtained, where thin films of MPIn polyindole were used as a transport layer, and their characteristics were measured and analyzed. The value of the quantum efficiency and the values of the mobility of charge carriers in thin polyindole films were estimated.
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Affiliation(s)
- Renat B. Salikhov
- Institute of Physics and Technology, Bashkir State University, Zaki Validi St. 32, 450076 Ufa, Russia; (I.N.M.); (T.R.S.); (I.F.S.)
- Correspondence:
| | - Akhat G. Mustafin
- Faculty of Chemistry, Bashkir State University, Zaki Validi St. 32, 450076 Ufa, Russia;
- Ufa Institute of Chemistry of the Russian Academy of Sciences, Pr. Oktyabrya 71, 450054 Ufa, Russia; (A.N.A.); (L.R.L.)
| | - Ilnur N. Mullagaliev
- Institute of Physics and Technology, Bashkir State University, Zaki Validi St. 32, 450076 Ufa, Russia; (I.N.M.); (T.R.S.); (I.F.S.)
| | - Timur R. Salikhov
- Institute of Physics and Technology, Bashkir State University, Zaki Validi St. 32, 450076 Ufa, Russia; (I.N.M.); (T.R.S.); (I.F.S.)
| | - Anastasiia N. Andriianova
- Ufa Institute of Chemistry of the Russian Academy of Sciences, Pr. Oktyabrya 71, 450054 Ufa, Russia; (A.N.A.); (L.R.L.)
| | - Lyaysan R. Latypova
- Ufa Institute of Chemistry of the Russian Academy of Sciences, Pr. Oktyabrya 71, 450054 Ufa, Russia; (A.N.A.); (L.R.L.)
| | - Ildus F. Sharafullin
- Institute of Physics and Technology, Bashkir State University, Zaki Validi St. 32, 450076 Ufa, Russia; (I.N.M.); (T.R.S.); (I.F.S.)
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30
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Luo X, Peng Z, Wang Z, Dong M. Layer-by-Layer Growth of AA-Stacking MoS 2 for Tunable Broadband Phototransistors. ACS Appl Mater Interfaces 2021; 13:59154-59163. [PMID: 34856097 DOI: 10.1021/acsami.1c19906] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The stacking configuration has been considered as an important additional degree of freedom to tune the physical property of layered materials, such as superconductivity and interlayer excitons. However, the facile growth of highly uniform stacking configuration is still a challenge. Herein, the AA-stacking MoS2 domains with a ratio up to 99.5% has been grown by using the modified chemical vapor deposition through introducing NaCl molecules in the confined space. By tuning the growth time, MoS2 domains would transit from an AA-stacking bilayer to an AAAAA-stacking five-layer. The epitaxial growth mechanism has been insightfully studied, revealing that the critical nucleation size of the AA-stacking bilayer is 5.0 ± 3.0 μm. Through investigation of the photoluminescence, the photoemission, especially the indirect photoexcitation, is dependent on both the stacking fashion and layer number. Furthermore, by studying the gate-tuned MoS2 phototransistors, we found a significant dependence on the stacking configuration of MoS2 of the photoexcitation and a different gate tunable photoresponse. The AAA-stacking trilayer MoS2 phototransistor delivers a photoresponse of 978.14 A W-1 at 550 nm. By correction of the external quantum efficiency with external field and illumination power density, it has been found that the photoresponse tunability is dependent on the layer number due to the strong photogating effect. This strategy provides a general avenue for the epitaxial growth of van der Waals film which will further facilitate the applications in a tunable photodetector.
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Affiliation(s)
- Xiai Luo
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Zhenghan Peng
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center, Aarhus University, Aarhus 8000, Denmark
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31
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Du Q, Qin S, Wang Z, Gan Y, Zhang Y, Fan L, Liu Y, Li S, Dong R, Liu C, Wang W, Wang F. Highly Sensitive and Ultrafast Organic Phototransistor Based on Rubrene Single Crystals. ACS Appl Mater Interfaces 2021; 13:57735-57742. [PMID: 34841872 DOI: 10.1021/acsami.1c18862] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Rubrene single crystals have received a lot of attention for their great potential in electronic and wearable nanoelectronics due to their high carrier mobility and excellent flexibility. While they exhibited remarkable electrical performances, their intrinsic potential as photon detectors has not been fully exploited. Here, we fabricate a sensitive and ultrafast organic phototransistor based on rubrene single crystals. The device covers the ultraviolet to visible range (275-532 nm), and the responsivity and detectivity can reach up to ∼4000 A W-1 and 1011 jones at 532 nm, respectively. Furthermore, the response times are highly gate-tunable down to sub-90 μs, and the cutoff frequency is ∼4 kHz, which is one of the fastest organic material-based phototransistors reported so far. Equally important is that the fabricated device exhibits stable light detection ability even after 8 months, indicating great long-term stability and excellent environmental robustness. The results suggest that the high-quality rubrene single crystal may be a promising material for future flexible optoelectronics with its intrinsic mechanical flexibility.
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Affiliation(s)
- Qianqian Du
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Shuchao Qin
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Zhifeng Wang
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Yuquan Gan
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Yuting Zhang
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Linsheng Fan
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Yunlong Liu
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Shuhong Li
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Ruixin Dong
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Cailong Liu
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Wenjun Wang
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Fengqiu Wang
- School of Electronic Science and Engineering and Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, Nanjing University, Nanjing 210093, China
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Abstract
Neuromorphic engineering, a methodology for emulating synaptic functions or neural systems, has attracted tremendous attention for achieving next-generation artificial intelligence technologies in the field of electronics and photonics. However, to emulate human visual memory, an active pixel sensor array for neuromorphic photonics has yet to be demonstrated, even though it can implement an artificial neuron array in hardware because individual pixels can act as artificial neurons. Here, we present a neuromorphic active pixel image sensor array (NAPISA) chip based on an amorphous oxide semiconductor heterostructure, emulating the human visual memory. In the 8 × 8 NAPISA chip, each pixel with a select transistor and a neuromorphic phototransistor is based on a solution-processed indium zinc oxide back channel layer and sputtered indium gallium zinc oxide front channel layer. These materials are used as a triggering layer for persistent photoconductivity and a high-performance channel layer with outstanding uniformity. The phototransistors in the pixels exhibit both photonic potentiation and depression characteristics by a constant negative and positive gate bias due to charge trapping/detrapping. The visual memory and forgetting behaviors of the NAPISA can be successfully demonstrated by using the pulsed light stencil method without any software or simulation. This study provides valuable information to other neuromorphic devices and systems for next-generation artificial intelligence technologies.
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Affiliation(s)
- Seongin Hong
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin 78758, Texas, United States
| | - Haewon Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
| | - Byung Ha Kang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Kyungho Park
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Deji Akinwande
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin 78758, Texas, United States
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Sunkook Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
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Li P, Zhang J, Zhu C, Shen W, Hu C, Fu W, Yan L, Zhou L, Zheng L, Lei H, Liu Z, Zhao W, Gao P, Yu P, Yang G. Penta-PdPSe: A New 2D Pentagonal Material with Highly In-Plane Optical, Electronic, and Optoelectronic Anisotropy. Adv Mater 2021; 33:e2102541. [PMID: 34302398 DOI: 10.1002/adma.202102541] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2021] [Revised: 04/28/2021] [Indexed: 06/13/2023]
Abstract
Due to their low-symmetry lattice characteristics and intrinsic in-plane anisotropy, 2D pentagonal materials, a new class of 2D materials composed entirely of pentagonal atomic rings, are attracting increasing research attention. However, the existence of these 2D materials has not been proven experimentally until the recent discovery of PdSe2 . Herein, penta-PdPSe, a new 2D pentagonal material with a novel low-symmetry puckered pentagonal structure, is introduced to the 2D family. Interestingly, a peculiar polyanion of [SePPSe]4- is discovered in this material, which is the biggest polyanion in 2D materials yet discovered. Strong intrinsic in-plane anisotropic behavior endows penta-PdPSe with highly anisotropic optical, electronic, and optoelectronic properties. Impressively, few-layer penta-PdPSe-based phototransistor not only achieves excellent electronic performances, a moderate electron mobility of 21.37 cm2 V-1 s-1 and a high on/off ratio of up to 108 , but it also has a high photoresponsivity of ≈5.07 × 103 A W-1 at 635 nm, which is ascribed to the photogating effect. More importantly, penta-PdPSe also exhibits a large anisotropic conductance (σmax /σmax = 3.85) and responsivity (Rmax /Rmin = 6.17 at 808 nm), superior to most 2D anisotropic materials. These findings make penta-PdPSe an ideal material for the design of next-generation anisotropic devices.
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Affiliation(s)
- Peiyang Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Jiantian Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China
| | - Wei Fu
- Centre of Advanced 2D Materials, National University of Singapore, 1 Science Drive 3, Singapore, 117550, Singapore
| | - Luo Yan
- Institute of Fundamental and Frontier Sciences, Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Liujiang Zhou
- Institute of Fundamental and Frontier Sciences, Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, P. R. China
| | - Hongxiang Lei
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Weina Zhao
- Guangdong Key Laboratory of Environmental Catalysis and Health Risk Control, Institute of Environmental Health and Pollution Control, School of Environmental Science and Engineering, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Pingqi Gao
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
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34
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Zhou D, Yu L, Zhu P, Zhao H, Feng S, Shen J. Lateral Structured Phototransistor Based on Mesoscopic Graphene/Perovskite Heterojunctions. Nanomaterials (Basel) 2021; 11:641. [PMID: 33807641 DOI: 10.3390/nano11030641] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/18/2021] [Revised: 02/04/2021] [Accepted: 02/06/2021] [Indexed: 12/23/2022]
Abstract
Due to their outstanding optical properties and superior charge carrier mobilities, organometal halide perovskites have been widely investigated in photodetection and solar cell areas. In perovskites photodetection devices, their high optical absorption and excellent quantum efficiency contribute to the responsivity, even the specific detectivity. In this work, we developed a lateral phototransistor based on mesoscopic graphene/perovskite heterojunctions. Graphene nanowall shows a porous structure, and the spaces between graphene nanowall are much appropriated for perovskite crystalline to mount in. Hot carriers are excited in perovskite, which is followed by the holes’ transfer to the graphene layer through the interfacial efficiently. Therefore, graphene plays the role of holes’ collecting material and carriers’ transporting channel. This charge transfer process is also verified by the luminescence spectra. We used the hybrid film to build phototransistor, which performed a high responsivity and specific detectivity of 2.0 × 103 A/W and 7.2 × 1010 Jones, respectively. To understand the photoconductive mechanism, the perovskite’s passivation and the graphene photogating effect are proposed to contribute to the device’s performance. This study provides new routes for the application of perovskite film in photodetection.
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Li XX, Chen XY, Chen JX, Zeng G, Li YC, Huang W, Ji ZG, Zhang DW, Lu HL. Dual-gate MoS 2phototransistor with atomic-layer-deposited HfO 2as top-gate dielectric for ultrahigh photoresponsivity. Nanotechnology 2021; 32:215203. [PMID: 33535194 DOI: 10.1088/1361-6528/abe2cc] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2020] [Accepted: 02/03/2021] [Indexed: 06/12/2023]
Abstract
An asymmetric dual-gate (DG) MoS2field-effect transistor (FET) with ultrahigh electrical performance and optical responsivity using atomic-layer-deposited HfO2as a top-gate (TG) dielectric was fabricated and investigated. The effective DG modulation of the MoS2FET exhibited an outstanding electrical performance with a high on/off current ratio of 6 × 108. Furthermore, a large threshold voltage modulation could be obtained from -20.5 to -39.3 V as a function of the TG voltage in a DG MoS2phototransistor. Meanwhile, the optical properties were systematically explored under a series of gate biases and illuminated optical power under 550 nm laser illumination. An ultrahigh photoresponsivity of 2.04 × 105AW-1has been demonstrated with the structure of a DG MoS2phototransistor because the electric field formed by the DG can separate photogenerated electrons and holes efficiently. Thus, the DG design for 2D materials with ultrahigh photoresponsivity provides a promising opportunity for the application of optoelectronic devices.
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Affiliation(s)
- Xiao-Xi Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Xin-Yu Chen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Jin-Xin Chen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Guang Zeng
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Yu-Chun Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Wei Huang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Zhi-Gang Ji
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiaotong University, Shanghai, 200240, People's Republic of China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Hong-Liang Lu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
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Yan Y, Chen Q, Wang X, Liu Y, Yu R, Gao C, Chen H, Guo T. Vertical Channel Inorganic/Organic Hybrid Electrochemical Phototransistors with Ultrahigh Responsivity and Fast Response Speed. ACS Appl Mater Interfaces 2021; 13:7498-7509. [PMID: 33533254 DOI: 10.1021/acsami.0c20704] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Organic phototransistors (OPTs) have attracted enormous attention because of their promising applications in sensing, communication, and imaging. Currently, most OPTs reported utilize field-effect transistors (FETs) with relative long channel length which usually has undesired amplification because of their inherent low transconductance originated from their low channel capacitance, limiting the further improvement of performance. Herein, a vertical channel hybrid electrochemical phototransistor with a nanoscale channel and large transconductance (VECPT) is invented for the first time to achieve ultrahigh photoresponsivity along with a fast response speed. Benefiting from the nanoscale channel length and large transconductance, the photo-generated carriers in channel can be efficiently dissociated, transported, and amplified into the enlarged photocurrent output. Therefore, the devices deliver substantially improved optoelectronic performances with a photoresponsivity as high as ≈2.99 × 107 A/W, detectivity of ≈1.49 × 1013 Jones, and fast-speed response of ≈73 μs under a low voltage of 1 V, which are superior to those of the reported OPTs based on FETs. Moreover, the in situ Kelvin probe microscopy is performed to characterize the surface potential of device systems for better elucidating the photosensing mechanism. Furthermore, taking advantage of its excellent optoelectronic performance, an ultraviolet light monitoring system is constructed by integrating VECPT with a light-emitting diode, which also shows the real-time, high-sensitive, and controllable photoresponse threshold properties. All these results demonstrate the great potential of these electrochemical phototransistors and provide valuable insights into the design of the nanoscale channel length device system for high-performance photodetection.
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Affiliation(s)
- Yujie Yan
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Qizhen Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Xiumei Wang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Yaqian Liu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Rengjian Yu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Changsong Gao
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
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Han X, Song P, Xing J, Chen Z, Li D, Xu G, Zhao X, Ma F, Rong D, Shi Y, Islam MR, Liu K, Huang Y. High-Performance Phototransistors Based on MnPSe 3 and Its Hybrid Structures with Au Nanoparticles. ACS Appl Mater Interfaces 2021; 13:2836-2844. [PMID: 33426871 DOI: 10.1021/acsami.0c19530] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered metal thiophosphates with a general formula MPX3 (M is a group VIIB or VIII element and X is a chalcogen) have emerged as a novel member in a two-dimensional (2D) family with fascinating physical and chemical properties. Herein, the photoelectric performance of the few-layer MnPSe3 was studied for the first time. The multilayer MnPSe3 shows p-type conductivity and its field-effect transistor delivers an ultralow dark current of about 0.1 pA. The photoswitching ratio reaches ∼103 at a wavelength of 375 nm, superior to that of other thiophosphates. A responsivity and detectivity of 392.78 mA/W and 2.19 × 109 Jones, respectively, have been demonstrated under irradiation of 375 nm laser with a power intensity of 0.1 mW/cm2. In particular, the photocurrent can be remarkably increased up to 30 times by integrating a layer of Au nanoparticle array at the bottom of the MnPSe3 layer. The metal-semiconductor interfacial electric field and the strain-induced flexoelectric polarization field caused by the underlying nanorugged Au nanoparticles are proposed to contribute together to the significant current improvement.
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Affiliation(s)
- Xu Han
- School of Science, China University of Geosciences, Beijing 100083, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Pengbo Song
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jie Xing
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Zhong Chen
- School of Mechanical and Electronic Engineering, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Danyang Li
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Guangyuan Xu
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Xiaojun Zhao
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Fangyuan Ma
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Dongke Rong
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Md Rasidul Islam
- Key laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Kong Liu
- Key laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Yuan Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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38
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Mukherjee S, Dutta D, Mohapatra PK, Dezanashvili L, Ismach A, Koren E. Scalable Integration of Coplanar Heterojunction Monolithic Devices on Two-Dimensional In 2Se 3. ACS Nano 2020; 14:17543-17553. [PMID: 33210905 DOI: 10.1021/acsnano.0c08146] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The formation of lateral heterojunction arrays within two-dimensional (2D) crystals is an essential step to realize high-density, ultrathin electro-optical integrated circuits, although the assembling of such structures remains elusive. Here we demonstrated a rapid, scalable, and site-specific integration of lateral 2D heterojunction arrays using few-layer indium selenide (In2Se3). We use a scanning laser probe to locally convert In2Se3 into In2O3, which shows a significant increase in carrier mobility and transforms the metal-semiconductor junctions from Schottky to ohmic type. In addition, a lateral p-n heterojunction diode within a single nanosheet is demonstrated and utilized for photosensing applications. The presented method enables high-yield, site-specific formation of lateral 2D In2Se3-In2O3-based hybrid heterojunctions for realizing nanoscale devices with multiple advanced functionalities.
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Affiliation(s)
- Subhrajit Mukherjee
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa, 3200003, Israel
| | - Debopriya Dutta
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa, 3200003, Israel
| | - Pranab K Mohapatra
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel
| | - Lital Dezanashvili
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel
| | - Ariel Ismach
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel
| | - Elad Koren
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa, 3200003, Israel
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39
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Abstract
Integration of low-power consumer electronics on glass can revolutionize the automotive and transport sectors, packaging industry, smart building and interior design, healthcare, life science engineering, display technologies, and many other applications. However, direct growth of high-performance, scalable, and reliable electronic materials on glass is difficult owing to low thermal budget. Similarly, development of energy-efficient electronic and optoelectronic devices on glass requires manufacturing innovations. Here, we accomplish both by relatively low-temperature (<600 °C) metal-organic chemical vapor deposition growth of atomically thin MoS2 on multicomponent glass and fabrication of low-power phototransistors using atomic layer deposition (ALD)-grown, high-k, and ultra-thin (∼20 nm) Al2O3 as the top-gate dielectric, circumventing the challenges associated with the ALD nucleation of oxides on inert basal planes of van der Waals materials. The MoS2 photodetectors demonstrate the ability to detect low-intensity visible light at high speed and low energy expenditure of ∼100 pico Joules. Furthermore, low device-to-device performance variation across the entire 1 cm2 substrate and aggressive channel length scalability confirm the technology readiness level of ultra-thin MoS2 photodetectors on glass.
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Affiliation(s)
- Joseph R Nasr
- Deparment of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nicholas Simonson
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Aaryan Oberoi
- Deparment of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Mark W Horn
- Deparment of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Saptarshi Das
- Deparment of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States
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40
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Song I, Ahn J, Shang X, Oh JH. Optoelectronic Property Modulation in Chiral Organic Semiconductor/Polymer Blends. ACS Appl Mater Interfaces 2020; 12:49926-49934. [PMID: 33092342 DOI: 10.1021/acsami.0c17211] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Organic phototransistors (OPTs) have been widely used in biomedical sensing, optical communications, and imaging. Charge-trapping effect has been utilized as an effective strategy for enhancing their photoresponsivity by effectively decreasing the dark current. The combination of organic semiconductors (OSCs), especially chiral OSCs, with insulating polymers has rarely been carried out for optoelectronic applications. Here, we fabricated OPTs containing both enantiopure and racemic air-stable n-type perylene diimide derivatives, CPDI-CN2-C6, and insulating biopolymer polylactide (PLA) and evaluated their photoresponsive properties. The PLA-blended systems exhibited greatly enhanced optoelectronic performances owing to the intense charge-trapping effect. Interestingly, the racemic system showed 3 times higher electron mobility and 12 times higher specific detectivity (1.3 × 1013 jones) compared with the enantiopure systems due to the more aggregated morphologies and larger grains, indicating that chiral composition can be used as a tuning parameter in optoelectronic devices. Our systematic study provides a feasible and effective method for producing high-performance n-type OPTs under ambient conditions.
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Affiliation(s)
- Inho Song
- School of Chemical and Biological Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Jaeyong Ahn
- School of Chemical and Biological Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Xiaobo Shang
- School of Chemical and Biological Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
- Chemistry Research Laboratory, Department of Chemistry, University of Oxford, Mansfield Road, Oxford OX1 3TA, U.K
| | - Joon Hak Oh
- School of Chemical and Biological Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
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41
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Winge DO, Limpert S, Linke H, Borgström MT, Webb B, Heinze S, Mikkelsen A. Implementing an Insect Brain Computational Circuit Using III-V Nanowire Components in a Single Shared Waveguide Optical Network. ACS Photonics 2020; 7:2787-2798. [PMID: 33123615 PMCID: PMC7587142 DOI: 10.1021/acsphotonics.0c01003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2020] [Indexed: 05/05/2023]
Abstract
Recent developments in photonics include efficient nanoscale optoelectronic components and novel methods for subwavelength light manipulation. Here, we explore the potential offered by such devices as a substrate for neuromorphic computing. We propose an artificial neural network in which the weighted connectivity between nodes is achieved by emitting and receiving overlapping light signals inside a shared quasi 2D waveguide. This decreases the circuit footprint by at least an order of magnitude compared to existing optical solutions. The reception, evaluation, and emission of the optical signals are performed by neuron-like nodes constructed from known, highly efficient III-V nanowire optoelectronics. This minimizes power consumption of the network. To demonstrate the concept, we build a computational model based on an anatomically correct, functioning model of the central-complex navigation circuit of the insect brain. We simulate in detail the optical and electronic parts required to reproduce the connectivity of the central part of this network using previously experimentally derived parameters. The results are used as input in the full model, and we demonstrate that the functionality is preserved. Our approach points to a general method for drastically reducing the footprint and improving power efficiency of optoelectronic neural networks, leveraging the superior speed and energy efficiency of light as a carrier of information.
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Affiliation(s)
- David O. Winge
- Department
of Physics and NanoLund, Lund University, P.O. Box 118, 221 00 Lund, Sweden
- E-mail:
| | - Steven Limpert
- Department
of Physics and NanoLund, Lund University, P.O. Box 118, 221 00 Lund, Sweden
| | - Heiner Linke
- Department
of Physics and NanoLund, Lund University, P.O. Box 118, 221 00 Lund, Sweden
| | - Magnus T. Borgström
- Department
of Physics and NanoLund, Lund University, P.O. Box 118, 221 00 Lund, Sweden
| | - Barbara Webb
- School
of Informatics, University of Edinburgh, 10 Crichton Street, Edinburgh EH8 9AB, United Kingdom
| | - Stanley Heinze
- Lund
Vision Group, Department of Biology, Lund University, 22362 Lund, Sweden
| | - Anders Mikkelsen
- Department
of Physics and NanoLund, Lund University, P.O. Box 118, 221 00 Lund, Sweden
- E-mail:
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42
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Abstract
Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges. In this study, a highly sensitive photodetector based on the van der Waals heterostructure of WSe2 and MoS2 was developed. The MoS2 was utilized as the channel for a phototransistor, whereas the WSe2-MoS2 PN junction in the out-of-plane orientation was utilized as a charge transfer layer. The vertical built-in electric field in the PN junction separated the photogenerated carriers, thus leading to a high photoconductive gain of 106. The proposed phototransistor exhibited an excellent performance, namely, a high photoresponsivity of 2700 A/W, specific detectivity of 5 × 1011 Jones, and response time of 17 ms. The proposed scheme in conjunction with the large-area synthesis technology of two-dimensional materials contributes significantly to practical photodetector applications.
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Affiliation(s)
- Gwang Hyuk Shin
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Cheolmin Park
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Khang June Lee
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyeok Jun Jin
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sung-Yool Choi
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea
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43
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Wu X, Dai D, Ling Y, Chen S, Huang C, Feng S, Huang W. Organic Single-Crystal Transistor with Unique Photo Responses and Its Application as Light-Stimulated Synaptic Devices. ACS Appl Mater Interfaces 2020; 12:30627-30634. [PMID: 32538621 DOI: 10.1021/acsami.0c05809] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Tremendous progress has been achieved on organic transistor-based photodetectors; however, because of the nonpositive correlation relationship between the photo/dark current ratio (P) and the gate voltage, the claimed best P, R (photoresponsivity), and D* (detectivity) can hardly be obtained simultaneously at a given gate voltage, which severely compromises the device performance. Here, a light and voltage dually gated transistor based on an organic semiconducting single crystal of 2,6-dithienylanthracene (DTAnt) is developed. Attributing to its very low on/off ratio in the dark and the remarkable increment of mobilities under illumination, this phototransistor shows good performance with a P of 3.83 × 103, R of 1.32 A W-1, and D* of 1.94 × 1012 Jones achieved simultaneously at Vg = -100 V. Besides, the good reversibility and repeatability of its light-responsive behavior allows for the construction of an artificial photonic neuromorphic device with demonstrated synaptic functions, including excitatory postsynaptic current, short/long-term memory , and pair-pulse facilitation/depression.
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Affiliation(s)
- Xiaosong Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao West Road, Fuzhou, Fujian 350002, P. R. China
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, Fujian 350002, P. R. China
| | - Donghuan Dai
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao West Road, Fuzhou, Fujian 350002, P. R. China
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, Fujian 350002, P. R. China
| | - Yao Ling
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao West Road, Fuzhou, Fujian 350002, P. R. China
| | - Shuo Chen
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao West Road, Fuzhou, Fujian 350002, P. R. China
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, Fujian 350002, P. R. China
| | - Chongyu Huang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao West Road, Fuzhou, Fujian 350002, P. R. China
| | - Shiyu Feng
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao West Road, Fuzhou, Fujian 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing 100049, P. R. China
| | - Weiguo Huang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao West Road, Fuzhou, Fujian 350002, P. R. China
- University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing 100049, P. R. China
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44
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Lee I, Kang WT, Kim JE, Kim YR, Won UY, Lee YH, Yu WJ. Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS 2 Heterojunction for Ultrahigh Performance Short Channel Phototransistor. ACS Nano 2020; 14:7574-7580. [PMID: 32401483 DOI: 10.1021/acsnano.0c03425] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) layered materials with properties such as a large surface-to-volume ratio, strong light interaction, and transparency are expected to be used in future optoelectronic applications. Many studies have focused on ways to increase absorption of 2D-layered materials for use in photodetectors. In this work, we demonstrate another strategy for improving photodetector performance using a graphene/MoS2 heterojunction phototransistor with a short channel length and a tunable Schottky barrier. The channel length of sub-30 nm, shorter than the diffusion length, decreases carrier recombination and carrier transit time in the channel and improves phototransistor performance. Furthermore, our graphene/MoS2 heterojunction phototransistor employed a tunable Schottky barrier that is only controlled by light and gate bias. It maintains a low dark current and an increased photocurrent. As a result, our graphene/MoS2 heterojunction phototransistor showed ultrahigh responsivity and detectivity of 2.2 × 105 A/W and 3.5 × 1013 Jones, respectively. This is a considerable improvement compared to previous pristine MoS2 phototransistors. We confirmed an effective method to develop phototransistors based on 2D materials and obtained ultrahigh performance of our phototransistor, which is promising for high-performance optoelectronic applications.
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Affiliation(s)
- Ilmin Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Won Tae Kang
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Ji Eun Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Rae Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Ui Yeon Won
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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45
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Tsai YY, Kuo CY, Li BC, Chiu PW, Hsu KYJ. A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode-Oxide-Semiconductor Field Effect Transistor. Micromachines (Basel) 2020; 11:mi11060596. [PMID: 32560333 PMCID: PMC7344728 DOI: 10.3390/mi11060596] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/25/2020] [Revised: 06/13/2020] [Accepted: 06/15/2020] [Indexed: 11/16/2022]
Abstract
In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found. The present work reports the observation of the electrical and optoelectronic characteristics of a graphene/polycrystalline silicon junction and explores one possible usage of the junction. The current–voltage curve of the junction was measured to show the typical exponential behavior that can be seen in a forward biased diode, and the photovoltage of the junction showed a logarithmic dependence on light intensity. A new phototransistor named the “photodiode–oxide–semiconductor field effect transistor (PDOSFET)” was further proposed and verified in this work. In the PDOSFET, a graphene/polycrystalline silicon photodiode was directly merged on top of the gate oxide of a conventional metal–oxide–semiconductor field effect transistor (MOSFET). The magnitude of the channel current of this phototransistor showed a logarithmic dependence on the illumination level. It is shown in this work that the PDOSFET facilitates a better pixel design in a complementary metal–oxide–semiconductor (CMOS) image sensor, especially beneficial for high dynamic range (HDR) image detection.
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46
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Lim DH, Kang M, Jang SY, Hwang K, Kim IB, Jung E, Jo YR, Kim YJ, Kim J, Choi H, Kim TW, Mathur S, Kim BJ, Kim DY. Unsymmetrical Small Molecules for Broad-Band Photoresponse and Efficient Charge Transport in Organic Phototransistors. ACS Appl Mater Interfaces 2020; 12:25066-25074. [PMID: 32297509 DOI: 10.1021/acsami.0c02229] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Organic photosensitizers have been investigated as effective light-sensing elements that can promote strong absorption with high field-effect mobility in organic phototransistors (OPTs). In this study, a novel organic photosensitizer is synthesized to demonstrate broad-band photoresponse with enhanced electrical performance. An unsymmetrical small molecule of a solubilizing donor (Dsol)-acceptor (A)-dye donor (Ddye) type connected with a twisted conjugation system is designed for broad-band detection (ranging from 250 to 700 nm). This molecule has high solubility, thereby facilitating the formation of uniformly dispersed nanoparticles in an insulating polymer matrix, which is deposited on top of OPT semiconductors by a simple solution process. The broad-band photodetection shown by the organic photosensitizer is realized with improved mobility close to an order of magnitude and high on/off current ratio (∼105) of the organic semiconductor. Furthermore, p-type charge transport behavior in the channel of the OPT is enhanced through the intrinsic electron-accepting ability of the organic photosensitizer caused by the unique molecular configuration. These structural properties of organic photosensitizers contribute to an improvement in broad-band photosensing systems with new optoelectronic properties and functionalities.
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Affiliation(s)
- Dae-Hee Lim
- School of Materials Science and Engineering (SMSE), Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61002, Republic of Korea
- Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Minji Kang
- Research Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61002, Republic of Korea
| | - Soo-Young Jang
- Research Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61002, Republic of Korea
| | - Kyoungtae Hwang
- School of Materials Science and Engineering (SMSE), Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61002, Republic of Korea
| | - In-Bok Kim
- Research Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61002, Republic of Korea
| | - Eunhwan Jung
- Inorganic and Materials Chemistry, University of Cologne, Cologne 50939, Germany
| | - Yong-Ryun Jo
- School of Materials Science and Engineering (SMSE), Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61002, Republic of Korea
| | - Yeon-Ju Kim
- School of Materials Science and Engineering (SMSE), Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61002, Republic of Korea
| | - Jihong Kim
- Korea Institute of S&T Evaluation and Planning (KISTEP), Seoul 06775, Republic of Korea
| | - Heechae Choi
- Inorganic and Materials Chemistry, University of Cologne, Cologne 50939, Germany
| | - Tae-Wook Kim
- Department of Flexible and Printable Electronics, Jeonbuk National University, 567 Baekle-daero, Deokjin-gu, Jeonju 54896, Republic of Korea
| | - Sanjay Mathur
- Inorganic and Materials Chemistry, University of Cologne, Cologne 50939, Germany
| | - Bong-Joong Kim
- School of Materials Science and Engineering (SMSE), Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61002, Republic of Korea
| | - Dong-Yu Kim
- School of Materials Science and Engineering (SMSE), Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61002, Republic of Korea
- Research Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61002, Republic of Korea
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47
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Xu T, Guo S, Qi W, Li S, Xu M, Wang W. Organic Transistor Nonvolatile Memory with Three-Level Information Storage and Optical Detection Functions. ACS Appl Mater Interfaces 2020; 12:21952-21960. [PMID: 32319288 DOI: 10.1021/acsami.0c01162] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
By the current processing technology, it is a challenge to obtain ultrahigh-density information storage in the conventional binary floating-gate-based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs). To develop a multilevel memory in one cell is a feasible solution. In this work, we demonstrate FG-OFET NVMs with an integrated polymer floating-gate/tunneling (I-FG/T) layer consisting of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) and polystyrene. The photoelectric effect of organic/polymer semiconductors is used to improve the controllability of the polarity and the number of the charges stored in the floating-gate. The FG-OFET NVMs integrate light sensitivity and nonvolatile information storage functions. By selecting suitable optical and electrical programming/erasing conditions, three-level information storage states, corresponding to electron storage, approximate neutrality, and hole storage in the floating-gate, are achieved and freely switched to each other. The memory mechanism and the dependence of the memory performances on the F8BT contents in I-FG/T layers are investigated. As a result, good memory performances, with mobility larger than 1.0 cm2 V-1 s-1, reliable three-level switching endurance over 100 cycles, and stable three-level retention capability over 20 000 s, are achieved in our memory. Furthermore, an imaging system with a nonvolatile information storage function is demonstrated in a 16 × 5 array of FG-OFET NVMs.
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Affiliation(s)
- Ting Xu
- College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Shuxu Guo
- College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Weihao Qi
- College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Shizhang Li
- College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Meili Xu
- College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Wei Wang
- College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
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48
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Kim J, Kwon SM, Jo C, Heo JS, Kim WB, Jung HS, Kim YH, Kim MG, Park SK. Highly Efficient Photo-Induced Charge Separation Enabled by Metal-Chalcogenide Interfaces in Quantum-Dot/Metal-Oxide Hybrid Phototransistors. ACS Appl Mater Interfaces 2020; 12:16620-16629. [PMID: 32180407 DOI: 10.1021/acsami.0c01176] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Quantum dot (QD)-based optoelectronics have received great interest for versatile applications because of their excellent photosensitivity, facile solution processability, and the wide range of band gap tunability. In addition, QD-based hybrid devices, which are combined with various high-mobility semiconductors, have been actively researched to enhance the optoelectronic characteristics and maximize the zero-dimensional structural advantages, such as tunable band gap and high light absorption. However, the difficulty of highly efficient charge transfer between QDs and the semiconductors and the lack of systematic analysis for the interfaces have impeded the fidelity of this platform, resulting in complex device architectures and unsatisfactory device performance. Here, we report ultrahigh detective phototransistors with highly efficient photo-induced charge separation using a Sn2S64--capped CdSe QD/amorphous oxide semiconductor (AOS) hybrid structure. The photo-induced electron transfer characteristics at the interface of the two materials were comprehensively investigated with an array of electrochemical and spectroscopic analyses. In particular, photocurrent imaging microscopy revealed that interface engineering in QD/AOS with chelating chalcometallate ligands causes efficient charge transfer, resulting in photovoltaic-dominated responses over the whole channel area. On the other hand, monodentate ligand-incorporated QD/AOS-based devices typically exhibit limited charge transfer with atomic vibration, showing photo-thermoelectric-dominated responses in the drain electrode area.
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Affiliation(s)
- Jaehyun Kim
- Displays and Devices Research Laboratory School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Sung Min Kwon
- Displays and Devices Research Laboratory School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Chanho Jo
- Displays and Devices Research Laboratory School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Jae-Sang Heo
- Department of Medicine, University of Connecticut School of Medicine, Farmington 06030, Connecticut, United States
| | - Won Bin Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Hyun Suk Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Myung-Gil Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Sung Kyu Park
- Displays and Devices Research Laboratory School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
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Chen Z, Sheleg G, Shekhar H, Tessler N. Structure-Property Relation in Organic-Metal Oxide Hybrid Phototransistors. ACS Appl Mater Interfaces 2020; 12:15430-15438. [PMID: 32134241 PMCID: PMC7467547 DOI: 10.1021/acsami.9b22165] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2019] [Accepted: 03/05/2020] [Indexed: 06/10/2023]
Abstract
We report an optoelectronic device consisting of a solution-processed indium gallium zinc oxide (IGZO) thin-film transistor and vacuum-deposited small organic molecules. Depending on the configurations of the organic materials, either bulk heterojunction or planar heterojunction (PHJ), the device assumes the functionality of either a photosensor or a photoinduced memory, respectively. Under λ = 625 nm light illumination, the photosensor shows response and recovery time of ∼50 ms, responsivity of ∼5 mA/W, sensitivity above 104, and a linear response. The mechanism of the photoinduced memory is studied experimentally and verified using a device simulation. We find that the memory is due to long charge retention time at the organic PHJ interface which is stable for over 9 days. It is correlated with the low leakage current found in ordered organic junctions having low subgap tail states. The presented integration of the PHJ with the transistor constitutes a new design of write-once-read-many-times memory device that is likely to be attractive for low-cost applications.
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Gao L, Hou S, Wang Z, Gao Z, Yu X, Yu J. One-Step Coating Processed Phototransistors Enabled by Phase Separation of Semiconductor and Dielectric Blend Film. Micromachines (Basel) 2019; 10:E716. [PMID: 31652945 DOI: 10.3390/mi10110716] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/05/2019] [Revised: 10/22/2019] [Accepted: 10/22/2019] [Indexed: 12/16/2022]
Abstract
Fabrication of organic thin-film transistors (OTFTs) via high throughput solution process routes have attracted extensive attention. Herein, we report a simple one-step coating method for vertical phase separation of the poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly(methyl methacrylate) (PMMA) blends as semiconducting and dielectric layers in OTFTs. These OTFTs can be used as phototransistors for ultraviolet (UV) light detection, where the phototransistors exhibited great photosensitivity of 597.6 mA/W and detectivity of 4.25 × 1010 Jones under 1 mW/cm2 UV light intensity. Studies of the electrical properties in these phototransistors suggested that optimized P3HT contents in the blend film can facilitate the improvement of film morphology, and therefore form optimized vertical phase separation of the PMMA and P3HT. These results indicate that the simple one-step fabrication method creates possibilities for realizing high throughput phototransistors with great photosensitivity.
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