1
|
Hu J, Han Y, Chi X, Omar GJ, Al Ezzi MME, Gou J, Yu X, Andrivo R, Watanabe K, Taniguchi T, Wee ATS, Qiao Z, Ariando A. Tunable Spin-Polarized States in Graphene on a Ferrimagnetic Oxide Insulator. Adv Mater 2024; 36:e2305763. [PMID: 37811809 DOI: 10.1002/adma.202305763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 10/01/2023] [Indexed: 10/10/2023]
Abstract
Spin-polarized two-dimensional (2D) materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, this work demonstrates the emergence of robust spin-polarization in graphene with large and tunable spin-splitting energy of up to 132 meV at zero applied magnetic fields. The spin polarization is induced through a magnetic exchange interaction between graphene and the underlying ferrimagnetic oxide insulating layer, Tm3 Fe5 O12 , as confirmed by its X-ray magnetic circular dichroism (XMCD). The spin-splitting energies are directly measured and visualized by the shift in their Landau-fan diagram mapped by analyzing the measured Shubnikov-de-Haas (SdH) oscillations as a function of applied electric fields, showing consistent fit with the first-principles and machine learning calculations. Further, the observed spin-splitting energies can be tuned over a broad range between 98 and 166 meV by field cooling. The methods and results are applicable to other 2D (magnetic) materials and heterostructures, and offer great potential for developing next-generation spin logic and memory devices.
Collapse
Affiliation(s)
- Junxiong Hu
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
| | - Yulei Han
- International Center for Quantum Design of Functional Materials, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Department of Physics, Fuzhou University, Fuzhou, Fujian, 350108, China
| | - Xiao Chi
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Ganesh Ji Omar
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Mohammed Mohammed Esmail Al Ezzi
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
| | - Jian Gou
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Xiaojiang Yu
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Rusydi Andrivo
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0044, Japan
| | - Andrew Thye Shen Wee
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Zhenhua Qiao
- International Center for Quantum Design of Functional Materials, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - A Ariando
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| |
Collapse
|
2
|
Lubert-Perquel D, Acharya S, Johnson JC. Optically Addressing Exciton Spin and Pseudospin in Nanomaterials for Spintronics Applications. ACS Appl Opt Mater 2023; 1:1742-1760. [PMID: 38037653 PMCID: PMC10683369 DOI: 10.1021/acsaom.3c00299] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 10/26/2023] [Accepted: 10/26/2023] [Indexed: 12/02/2023]
Abstract
Oriented exciton spins that can be generated and manipulated optically are of interest for a range of applications, including spintronics, quantum information science, and neuromorphic computing architectures. Although materials that host such excitons often lack practical coherence times for use on their own, strategic transduction of the magnetic information across interfaces can combine fast modulation with longer-term storage and readout. Several nanostructure systems have been put forward due to their interesting magneto-optical properties and their possible manipulation using circularly polarized light. These material systems are presented here, namely two-dimensional (2D) systems due to the unique spin-valley coupling properties and quantum dots for their exciton fine structure. 2D magnets are also discussed for their anisotropic spin behavior and extensive 2D magnetic states that are not yet fully understood but could pave the way for emergent techniques of magnetic control. This review also details the experimental and theoretical tools to measure and understand these systems along with a discussion on the progress of optical manipulation of spins and magnetic order transitions.
Collapse
Affiliation(s)
- Daphné Lubert-Perquel
- Materials, Chemical, and
Computational Science Directorate, National
Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, United States
| | - Swagata Acharya
- Materials, Chemical, and
Computational Science Directorate, National
Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, United States
| | - Justin C. Johnson
- Materials, Chemical, and
Computational Science Directorate, National
Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, United States
| |
Collapse
|
3
|
Dednam W, García-Blázquez MA, Zotti LA, Lombardi EB, Sabater C, Pakdel S, Palacios JJ. A Group-Theoretic Approach to the Origin of Chirality-Induced Spin-Selectivity in Nonmagnetic Molecular Junctions. ACS Nano 2023; 17:6452-6465. [PMID: 36947721 PMCID: PMC10100547 DOI: 10.1021/acsnano.2c11410] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/15/2022] [Accepted: 03/16/2023] [Indexed: 06/18/2023]
Abstract
Spin-orbit coupling gives rise to a range of spin-charge interconversion phenomena in nonmagnetic systems where certain spatial symmetries are reduced or absent. Chirality-induced spin-selectivity (CISS), a term that generically refers to a spin-dependent electron transfer in nonmagnetic chiral systems, is one such case, appearing in a variety of seemingly unrelated situations ranging from inorganic materials to molecular devices. In particular, the origin of CISS in molecular junctions is a matter of an intense current debate. Here, we derive a set of geometrical conditions for this effect to appear, hinting at the fundamental role of symmetries beyond otherwise relevant quantitative issues. Our approach, which draws on the use of point-group symmetries within the scattering formalism for transport, shows that electrode symmetries are as important as those of the molecule when it comes to the emergence of a spin-polarization and, by extension, to the possible appearance of CISS. It turns out that standalone metallic nanocontacts can exhibit spin-polarization when relative rotations which reduce the symmetry are introduced. As a corollary, molecular junctions with achiral molecules can also exhibit spin-polarization along the direction of transport, provided that the whole junction is chiral in a specific way. This formalism also allows the prediction of qualitative changes of the spin-polarization upon substitution of a chiral molecule in the junction with its enantiomeric partner. Quantum transport calculations based on density functional theory corroborate all of our predictions and provide further quantitative insight within the single-particle framework.
Collapse
Affiliation(s)
- W. Dednam
- Department
of Physics, Florida Science Campus, University
of South Africa, 1710 Johannesburg, South Africa
| | - M. A. García-Blázquez
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| | - Linda A. Zotti
- Departamento
de Física Teórica de la Materia Condensada, Universidad Autonoma de Madrid, E-28049 Madrid, Spain
- Condensed
Matter Physics Center (IFIMAC), Universidad
Autónoma de Madrid, E-28049 Madrid, Spain
| | - E. B. Lombardi
- Department
of Physics, Florida Science Campus, University
of South Africa, 1710 Johannesburg, South Africa
| | - C. Sabater
- Departamento
de Física Aplicada and Unidad asociada CSIC, Universidad de Alicante, E-03690 Alicante, Spain
| | - S. Pakdel
- CAMD, Department
of Physics, Technical University of Denmark, 2800 Lyngby, Denmark
| | - J. J. Palacios
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
- Instituto
Nicolás Cabrera (INC) and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| |
Collapse
|
4
|
Sarkar S, Misra A. Spin-thermoelectric properties and giant tunneling magnetoresistance of boron-substituted graphene nanoribbon: a first principle study. J Phys Condens Matter 2022; 34:345802. [PMID: 35688140 DOI: 10.1088/1361-648x/ac77cd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2022] [Accepted: 06/10/2022] [Indexed: 06/15/2023]
Abstract
In this study we have designed a spin caloritronic device based on boron doped armchair graphene nanoribbons (B2-7AGNR). In presence of ferromagnetic (FM) graphitic-carbon nitride (g-C4N3) electrodes the spin-thermoelectric features of the device, both for FM and antiferromagnetic (AFM) states, are studied using first principle calculations. The spin polarized transmission peaks and the presence of density of states near the Fermi level indicate that the system have large spin-thermoelectric figure of merit. In addition, it is observed that the system has a large tunneling magnetoresistance due to the difference in total current between FM and AFM configurations. Further studies reveal that the spin component of the Seebeck coefficient of the device is much higher than the other zigzag and armchair nanoribbons. When the spin magnetic moments of the electrodes are aligned in parallel manner, spin-thermoelectric figure of merit of the system becomes significantly high. It has also been found that on decreasing temperature the efficiency of the device increases. As a whole, the numerical results show thatg-C4N3-B2-7AGNR-g-C4N3system in FM configuration is an efficient low temperature thermoelectric device.
Collapse
Affiliation(s)
- Sudip Sarkar
- Department of Chemistry, University of North Bengal, Siliguri 734013, India
| | - Anirban Misra
- Department of Chemistry, University of North Bengal, Siliguri 734013, India
| |
Collapse
|
5
|
Zhan G, Zhang J, Zhang L, Ou Z, Yang H, Qian Y, Zhang X, Xing Z, Zhang L, Li C, Zhong J, Yuan J, Cao Y, Zhou D, Chen X, Ma H, Song X, Zha C, Huang X, Wang J, Wang T, Huang W, Wang L. Stimulating and Manipulating Robust Circularly Polarized Photoluminescence in Achiral Hybrid Perovskites. Nano Lett 2022; 22:3961-3968. [PMID: 35507685 DOI: 10.1021/acs.nanolett.2c00482] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Circularly polarized light (CPL) is essential for optoelectronic and chiro-spintronic applications. Hybrid perovskites, as star optoelectronic materials, have demonstrated CPL activity, which is, however, mostly limited to chiral perovskites. Here, we develop a simple, general, and efficient strategy to stimulate CPL activity in achiral perovskites, which possess rich species, efficient luminescence, and tunable bandgaps. With the formation of van der Waals heterojunctions between chiral and achiral perovskites, a nonequilibrium spin population and thus CPL activity are realized in achiral perovskites by receiving spin-polarized electrons from chiral perovskites. The polarization degree of room-temperature CPL in achiral perovskites is at least one order of magnitude higher than in chiral ones. The CPL polarization degree and emission wavelengths of achiral perovskites can be flexibly designed by tuning chemical compositions, operating temperature, or excitation wavelengths. We anticipate that unlimited types of achiral perovskites can be endowed with CPL activity, benefiting their applications in integrated CPL sources and detectors.
Collapse
Affiliation(s)
- Guixiang Zhan
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Junran Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Linghai Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Zhenwei Ou
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Hongyu Yang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Yuchi Qian
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Xu Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Ziyue Xing
- Frontiers Science Center for Flexible Electronics, Key Laboratory of Flexible Electronics, Shaanxi Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Le Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Congzhou Li
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Jingxian Zhong
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Jiaxiao Yuan
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Yang Cao
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Dawei Zhou
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Huifang Ma
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Xuefen Song
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Chenyang Zha
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Xiao Huang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Ti Wang
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
- Frontiers Science Center for Flexible Electronics, Key Laboratory of Flexible Electronics, Shaanxi Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| |
Collapse
|
6
|
Wu D, Zhao Y, Yang Y, Huang L, Xiao Y, Chen S, Zhao Y. Atomic Intercalation Induced Spin-Flip Transition in Bilayer CrI 3. Nanomaterials (Basel) 2022; 12:1420. [PMID: 35564129 PMCID: PMC9101792 DOI: 10.3390/nano12091420] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/26/2022] [Revised: 04/10/2022] [Accepted: 04/19/2022] [Indexed: 11/16/2022]
Abstract
The recent discovery of 2D magnets has induced various intriguing phenomena due to the modulated spin polarization by other degrees of freedoms such as phonons, interlayer stacking, and doping. The mechanism of the modulated spin-polarization, however, is not clear. In this work, we demonstrate theoretically and computationally that interlayer magnetic coupling of the CrI3 bilayer can be well controlled by intercalation and carrier doping. Interlayer atomic intercalation and carrier doping have been proven to induce an antiferromagnetic (AFM) to ferromagnetic (FM) phase transition in the spin-polarization of the CrI3 bilayer. Our results revealed that the AFM to FM transition induced by atom intercalation was a result of enhanced superexchange interaction between Cr atoms of neighboring layers. FM coupling induced by O intercalation mainly originates from the improved superexchange interaction mediated by Cr 3d-O 2p coupling. FM coupling induced by Li intercalation was found to be much stronger than that by O intercalation, which was attributed to the much stronger superexchange by electron doping than by hole doping. This comprehensive spin exchange mechanism was further confirmed by our results of the carrier doping effect on the interlayer magnetic coupling. Our work provides a deep understanding of the underlying spin exchange mechanism in 2D magnetic materials.
Collapse
Affiliation(s)
- Dongsi Wu
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China; (D.W.); (Y.Z.); (Y.Y.); (L.H.); (Y.X.); (Y.Z.)
| | - Ying Zhao
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China; (D.W.); (Y.Z.); (Y.Y.); (L.H.); (Y.X.); (Y.Z.)
| | - Yibin Yang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China; (D.W.); (Y.Z.); (Y.Y.); (L.H.); (Y.X.); (Y.Z.)
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou 510006, China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China; (D.W.); (Y.Z.); (Y.Y.); (L.H.); (Y.X.); (Y.Z.)
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou 510006, China
| | - Ye Xiao
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China; (D.W.); (Y.Z.); (Y.Y.); (L.H.); (Y.X.); (Y.Z.)
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou 510006, China
| | - Shanshan Chen
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China; (D.W.); (Y.Z.); (Y.Y.); (L.H.); (Y.X.); (Y.Z.)
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou 510006, China
| | - Yu Zhao
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China; (D.W.); (Y.Z.); (Y.Y.); (L.H.); (Y.X.); (Y.Z.)
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou 510006, China
| |
Collapse
|
7
|
Mitra S, Ahmad A, Chakrabarti S, Biswas S, Das AK. Study of structural, electronic and magnetic properties of Ti doped Co 2FeGe Heusler alloy: Co 2Fe 1-xTi xGe ( x= 0, 0.5, and 0.75). J Phys Condens Matter 2021; 34:035803. [PMID: 34654007 DOI: 10.1088/1361-648x/ac3039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2021] [Accepted: 10/15/2021] [Indexed: 06/13/2023]
Abstract
Tunability of structural, magnetic and electronic properties of Co2FeGe Heusler alloy is experimentally demonstrated by doping Ti in the Fe site (i.e. Co2Fe1-xTixGe), followed by in-depth first principle calculations. Co2FeGe in its pure phase shows very high saturation magnetization, Curie temperature and spin-wave stiffness constant which were reported in our earlier work. With gradual increase in Ti doping concentration (x= 0.5 and 0.75), the experimental saturation magnetization is found to be decreased to 4.3 μB/f.u. and 3.1 μB/f.u. respectively as compared to the parent alloy (x= 0) having the saturation magnetization of 6.1 μB/f.u. Variation of spinwave stiffness constant is also studied for differentxand found to be decreasing from peak value of 10.4 nm2 meV (forx= 0) to the least value of 2.56 nm2 meV forx= 0.5. Justification of the experimental results is given with first principle calculations. Computational phase diagram of the alloys is found in terms of formation energy showing that the doping in Fe site (i.e. Co2Fe1-xTixGe) is more stable rather than in Co site (i.e. Co2-xFeTixGe). The change in magnetic moment and half-metallicity with Ti doping concentration is better explained under GGA +Uapproach as compared to GGA approach signifying that the electron-electron correlation (U) has a distinct role to play in the alloys. Effect of variation ofUfor Ti atom is studied and optimized with reference to the experimental results. The dynamical stability of the Co2Fe1-xTixGe alloy crystal structure is explained in terms of phonon dispersion relations and the effect ofUon the phonon density of states is also explored. Close agreement between the experimental and theoretical results is observed.
Collapse
Affiliation(s)
- Srimanta Mitra
- Indian Institute of Technology Kharagpur, Khargapur-721302, India
- Sensor Development Area, Space Applications Centre, ISRO, Ahmedabad-380015, India
| | - Aquil Ahmad
- Department of Physics, School of Electrical and Electronics Engineering, SASTRA Deemed University, Thanjavur, Tamilnadu 613401, India
| | | | - Sajib Biswas
- Indian Institute of Technology Kharagpur, Khargapur-721302, India
| | - Amal Kumar Das
- Indian Institute of Technology Kharagpur, Khargapur-721302, India
| |
Collapse
|
8
|
Rincón L, Mora JR, Rodriguez V, Torres FJ. Na⋯B bond in NaBH 3 - : An induced spin-polarized bond. Chemphyschem 2021; 23:e202100676. [PMID: 34708497 DOI: 10.1002/cphc.202100676] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/15/2021] [Revised: 10/25/2021] [Indexed: 11/10/2022]
Abstract
The nature of the Na⋯B bond, in the recently synthesized NaBH 3 - adduct, is analyzed on the light of the Na- propensity to polarize along the bond axis as a consequence of the electric field produced by the BH3 fragment. The observed induced polarization has two consequences: (i) the energetic stabilization of the Na- , and (ii) the split of its valence electrons into two opposite lobes along the bond axis. Additionally, an analysis of the electron localization is presented using the information content of the correlated conditional pair density that reveals a significant delocalization between one lobe of the polarized Na- anion and the BH3 fragment at the equilibrium distance. Our findings reported here complement previous works on this system.
Collapse
Affiliation(s)
- Luis Rincón
- Grupo de Química Computacional y Teórica (QCT-USFQ), Departamento de Ingeniería Química, Colegio Politecnico de Ciencias e Ingeniería, Universidad San Francisco de Quito, Quito, 170157, Ecuador.,Instituto de Simulación Computacional, Universidad San Francisco de Quito, Quito, 170157, Ecuador
| | - Jose R Mora
- Grupo de Química Computacional y Teórica (QCT-USFQ), Departamento de Ingeniería Química, Colegio Politecnico de Ciencias e Ingeniería, Universidad San Francisco de Quito, Quito, 170157, Ecuador.,Instituto de Simulación Computacional, Universidad San Francisco de Quito, Quito, 170157, Ecuador
| | - Vladimir Rodriguez
- Instituto de Simulación Computacional, Universidad San Francisco de Quito, Quito, 170157, Ecuador.,Departamento de Matemáticas, Colegio Politecnico de Ciencias e Ingeniería, Quito, 170157, Ecuador
| | - F Javier Torres
- Grupo de Química Computacional y Teórica (QCT-USFQ), Departamento de Ingeniería Química, Colegio Politecnico de Ciencias e Ingeniería, Universidad San Francisco de Quito, Quito, 170157, Ecuador.,Grupo de Química Computacional y Teórica (QCT-UR), Facultad de Ciencias Naturales, Universidad del Rosario, Bogota, 111221, Colombia
| |
Collapse
|
9
|
Ong BL, Naradipa MA, Fauzi AD, Majidi MA, Diao C, Kurumi S, Das PK, Xiao C, Yang P, Breese MBH, Ong SW, Tan KM, Tok ES, Rusydi A. A New Spin-Correlated Plasmon in Novel Highly Oriented Single-Crystalline Gold Quantum Dots. Nano Lett 2021; 21:7448-7456. [PMID: 34498884 DOI: 10.1021/acs.nanolett.0c05004] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A concept of spin plasmon, a collective mode of spin-density, in strongly correlated electron systems has been proposed since the 1930s. It is expected to bridge between spintronics and plasmonics by strongly confining the photon energy in the subwavelength scale within single magnetic-domain to enable further miniaturizing devices. However, spin plasmon in strongly correlated electron systems is yet to be realized. Herein, we present a new spin correlated-plasmon at room temperature in novel Mott-like insulating highly oriented single-crystalline gold quantum-dots (HOSG-QDs). Interestingly, the spin correlated-plasmon is tunable from the infrared to visible, accompanied by spectral weight transfer yielding a large quantum absorption midgap state, disappearance of low-energy Drude response, and transparency. Supported with theoretical calculations, it occurs due to an interplay of surprisingly strong electron-electron correlations, s-p hybridization and quantum confinement in the s band. The first demonstration of the high sensitivity of spin correlated-plasmon in surface-enhanced Raman spectroscopy is also presented.
Collapse
Affiliation(s)
- Bin Leong Ong
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Muhammad Avicenna Naradipa
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Angga Dito Fauzi
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Muhammad Aziz Majidi
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Caozheng Diao
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Satoshi Kurumi
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Pranab Kumar Das
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Chi Xiao
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Ping Yang
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Mark B H Breese
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Sheau Wei Ong
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Khay Ming Tan
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Eng Soon Tok
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Andrivo Rusydi
- Advanced Research Initiative for Correlated-Electron Systems (ARiCES), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| |
Collapse
|
10
|
Fransson J. Charge Redistribution and Spin Polarization Driven by Correlation Induced Electron Exchange in Chiral Molecules. Nano Lett 2021; 21:3026-3032. [PMID: 33759530 PMCID: PMC8050826 DOI: 10.1021/acs.nanolett.1c00183] [Citation(s) in RCA: 38] [Impact Index Per Article: 12.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2021] [Revised: 03/19/2021] [Indexed: 05/20/2023]
Abstract
Chiral induced spin selectivity is a phenomenon that has been attributed to chirality, spin-orbit interactions, and nonequilibrium conditions, while the role of electron exchange and correlations have been investigated only marginally until very recently. However, as recent experiments show that chiral molecules acquire a finite spin-polarization merely by being in contact with a metallic surface, these results suggest that electron correlations play a more crucial role for the emergence of the phenomenon than previously thought. Here, it is demonstrated that molecular vibrations give rise to molecular charge redistribution and accompany spin-polarization when coupling a chiral molecule to a nonmagnetic metal. The presented theory opens up new routes to construct a comprehensive picture of enantiomer separation.
Collapse
Affiliation(s)
- Jonas Fransson
- Department of Physics and Astronomy, Uppsala University, Box 516, 75121 Uppsala, Sweden
| |
Collapse
|
11
|
Chang Y, Moon SR, Wang X, Khenata R, Khachai H, Kuang M. Computational Insights Into the Electronic Structure and Magnetic Properties of Rhombohedral Type Half-Metal GdMnO 3 With Multiple Dirac-Like Band Crossings. Front Chem 2020; 8:558. [PMID: 32793551 PMCID: PMC7386256 DOI: 10.3389/fchem.2020.00558] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2020] [Accepted: 06/02/2020] [Indexed: 11/27/2022] Open
Abstract
In spintronics, half-metallic materials (HMMs) with Dirac-like cones exhibit interesting physical properties such as massless Dirac fermions and full spin polarization. We combined first-principles calculations with the quasi-harmonic Debye model, and we proposed that the rhombohedral GdMnO3 is an HMM with multiple linear band crossings. The physical properties of GdMnO3 were studied thoroughly. Moreover, the changes of multiple linear band crossings and 100% spin polarization under spin-orbit coupling as well as the electron and hole doping were also investigated. It is noted that such spin-polarized HMMs with linear band crossings are still very rare in two-dimensional and three-dimensional materials.
Collapse
Affiliation(s)
- Yu Chang
- Tonghua Normal University, Tonghua, China.,Department of Electronic Engineering, Wonkwang University, Iksan, South Korea
| | - Sung-Ryong Moon
- Department of Electronic Engineering, Wonkwang University, Iksan, South Korea
| | - Xin Wang
- Tonghua Normal University, Tonghua, China.,Department of Electronic Engineering, Wonkwang University, Iksan, South Korea
| | - Rabah Khenata
- Laboratoire de Physique Quantique de La Matiere et de Modelisation Mathematique (LPQ3M), Université de Mascara, Mascara, Algeria
| | - H Khachai
- Laboratoire D'etude des Materiaux & Instrumentations Optiques, Physics Department, Djillali Liabès University of Sidi Bel-Abbès, Sidi Bel Abbès, Algeria
| | - Minquan Kuang
- School of Physical Science and Technology, Southwest University, Chongqing, China
| |
Collapse
|
12
|
Abstract
Density functional theory (DFT) and Berry curvature calculations show that quantum anomalous Hall effect (QAHE) can be realized in two-dimensional(2D) antiferromagnetic (AFM) NiRuCl6. The results indicate that NiRuCl6 behaves as an AFM Chern insulator and its spin-polarized electronic structure and strong spin-orbit coupling (SOC) are responsible for the QAHE. By tuning SOC, we found that the topological property of NiRuCl6 arises from its energy band inversion. Considering the compatibility between the AFM and insulators, AFM Chern insulator provides a new way to archive high temperature QAHE in experiments due to its different magnetic coupling mechanism from that of ferromagnetic (FM) Chern insulator.
Collapse
Affiliation(s)
- P Zhou
- Key Laboratory of Low-dimensional Materials and Application Technology, School of Material Sciences and Engineering, Xiangtan University , Xiangtan 411105, China
| | - C Q Sun
- Hunan Provincial Key laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , Xiangtan 411105, China
| | - L Z Sun
- Hunan Provincial Key laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University , Xiangtan 411105, China
| |
Collapse
|
13
|
Jin X, Matsuba S, Honda Y, Miyajima T, Yamamoto M, Utiyama T, Takeda Y. Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode. Ultramicroscopy 2013; 130:44-8. [PMID: 23711697 DOI: 10.1016/j.ultramic.2013.04.008] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2012] [Revised: 04/17/2013] [Accepted: 04/23/2013] [Indexed: 11/23/2022]
Abstract
GaAs/GaAsP strained superlattices are excellent candidates for use as spin-polarized electron sources. In the present study, picosecond electron bunches were successfully generated from such a superlattice photocathode. However, electron transport in the superlattice was much slower than in bulk GaAs. Transmission electron microscopy observations revealed that a small amount of variations in the uniformity of the layers was present in the superlattice. These variations lead to fluctuations in the superlattice mini-band structure and can affect electron transport. Thus, it is expected that if the periodicity of the superlattice can be improved, much faster electron bunches can be produced.
Collapse
|