Toward a New Theory of the Fractional Quantum Hall Effect

The fractional quantum Hall effect was experimentally discovered in 1982. It was observed that the Hall conductivity σyx of a two-dimensional electron system is quantized, σyx=e2/3h, in the vicinity of the Landau level filling factor ν=1/3. In 1983, Laughlin proposed a trial many-body wave function, which he claimed described a "new state of matter"-a homogeneous incompressible liquid with fractionally charged quasiparticles. Here, I develop an exact diagonalization theory that allows one to calculate the energy and other physical properties of the ground and excited states of a system of N two-dimensional Coulomb interacting electrons in a strong magnetic field. I analyze the energies, electron densities, and other physical properties of the systems with N≤7 electrons continuously as a function of magnetic field in the range 1/4≲ν<1. The results show that both the ground and excited states of the system resemble a sliding Wigner crystal whose parameters are influenced by the magnetic field. Energy gaps in the many-particle spectra appear and disappear as the magnetic field changes. I also calculate the physical properties of the ν=1/3 Laughlin state for N≤8 and compare the results with the exact ones. This comparison, as well as an analysis of some other statements published in the literature, show that the Laughlin state and its fractionally charged excitations do not describe the physical reality, neither at small N nor in the thermodynamic limit. The results obtained shed new light on the nature of the ground and excited states in the fractional quantum Hall effect.

Optoelectronic Synapse Based on 2D Electron Gas in Stoichiometry-Controlled Oxide Heterostructures

Emulating synaptic functionalities in optoelectronic devices is significant in developing artificial visual-perception systems and neuromorphic photonic computing. Persistent photoconductivity (PPC) in metal oxides provides a facile way to realize the optoelectronic synaptic devices, but the PPC performance is often limited due to the oxygen vacancy defects that release excess conduction electrons without external stimuli. Herein, a high-performance optoelectronic synapse based on the stoichiometry-controlled LaAlO3 /SrTiO3 (LAO/STO) heterostructure is developed. By increasing La/Al ratio up to 1.057:1, the PPC is effectively enhanced but suppressed the background conductivity at the LAO/STO interface, achieving strong synaptic behaviors. The spectral noise analyses reveal that the synaptic behaviors are attributed to the cation-related point defects and their charge compensation mechanism near the LAO/STO interface. The short-term and long-term plasticity is demonstrated, including the paired-pulse facilitation, in the La-rich LAO/STO device upon exposure to UV light pulses. As proof of concepts, two essential synaptic functionalities, the pulse-number-dependent plasticity and the self-noise cancellation, are emulated using the 5 × 5 array of La-rich LAO/STO synapses. Beyond the typical oxygen deficiency control, the results show how harnessing the cation stoichiometry can be used to design oxide heterostructures for advanced optoelectronic synapses and neuromorphic applications.

Large Nonlinear Transverse Conductivity and Berry Curvature in KTaO3 Based Two-Dimensional Electron Gas

Two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion and symmetry breaking. In this work, we report large nonlinear transverse conductivities in the LaAlO3/KTaO3 interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear transverse conductivity with linear longitudinal conductivity and 3-fold symmetry. Moreover, gate-tunable nonlinear transport with pronounced peak and dip was observed and reproduced by our theoretical calculation. These results indicate the presence of Berry curvature hotspots and thus a large Berry curvature triplet at the oxide interface. Our theoretical calculations confirm the existence of large Berry curvatures from the avoided crossing of multiple 5d-orbit bands, orders of magnitude larger than that in transition-metal dichalcogenides. Nonlinear transport offers a new pathway to probe the Berry curvature at oxide interfaces and facilitates new applications in oxide nonlinear electronics.

Electrical transport behavior of the oxygen vacancies-rich LaAlO3/SrTiO3heterogeneous interface at high temperature

Oxygen vacancy is one of the original mechanisms of the two-dimensional electron gas (2DEG) at the LaAlO3(LAO) and SrTiO3(STO) heterogeneous interface, and it has an important impact on the electrical properties of LAO/STO heterojunction. In this work, the LAO thin films were grown on the STO substrates by pulsed laser deposition, and the electrical transport behavior of the LAO/STO interface at high temperature and high vacuum were systematically studied. It was found that at high temperature and high vacuum, the oxygen vacancies-rich LAO/STO heterojunction would undergo a metal-insulator transition, and return to metal conductivity when the temperature is further increased. At this time, the conduction mechanism of the sample is drift mode and the thermal activation energy is 0.87 eV. While during the temperature decreasing, the conduction mechanism would transfer to hopping conduction with the thermal activation energy of 0.014 eV and the resistance would increase dramatically and present a completely insulated state. However, when the oxygen vacancies-rich sample is exposed to air, the resistance would gradually decrease and recover.

High-performance resistive random access memory using two-dimensional electron gas electrode and its switching mechanism analysis

In this study, a two-dimensional electron gas (2DEG), which is a conductive layer formed at the interface of Al2O3and TiO2, was used as an electrode for resistive random access memory (RRAM) and implemented in a cell size down to 30 nm. For an RRAM device comprising W/2DEG/TiO2/W, we confirmed that the dominant switching mechanism changed from interfacial to filamentary as the cell size decreased from 500 nm to 30 nm. Through analyses of changes in forming characteristics and conduction mechanisms in the low resistive state depending on the cell size, it was identified that the 2DEG acted as an oxygen-scavenging layer of TiO2during the resistive switching process. By comparing the switching characteristics of RRAM devices with and without 2DEG for a 30 nm cell size, we confirmed that a high-performance 2DEG RRAM was realized, with highly uniform current-voltage characteristics, a low operating voltage (∼1 V), and a high on/off ratio (>102). Finally, the applicability of the proposed device to a crossbar array was validated by evaluating 1S1R operation with an NbO2-based selector. Considering the improved switching uniformity, the 2DEG RRAM shows promise for high-density memory applications.

Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures

The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 × 1014 cm-2 ÷ 1.2 × 1016 cm-2. The low-temperature photoluminescence spectra, electron concentration and mobility, and high-resolution X-ray diffraction curves were measured after the deactivation. The paper discusses the effect of neutron dose on the conductivity and optical spectra of structures based on InGaAs quantum wells depending on the doping level. The limiting dose of neutron irradiation was also estimated for the successful utilization of AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs heterostructures in electronic applications.

Moiré-Pattern Modulated Electronic Structures of GaSe/HOPG Heterostructure

Conventional two-dimensional electron gas (2DEG) typically occurs at the interface of semiconductor heterostructures and noble metal surfaces, but it is scarcely observed in individual 2D semiconductors. In this study, few-layer gallium selenide (GaSe) grown on highly ordered pyrolytic graphite (HOPG) is demonstrated using scanning tunneling microscopy and spectroscopy (STM/STS), revealing that the coexistence of quantum well states (QWS) and 2DEG. The QWS are located in the valence bands and exhibit a peak feature, with the number of quantum wells being equal to the number of atomic layers. Meanwhile, the 2DEG is located in the conduction bands and exhibits a standing-wave feature. Additionally, monolayer GaSe/HOPG heterostructures with different stacking angles (0°, 33°, 8°) form distinct moiré patterns that arise from lattice mismatch and angular rotation between adjacent atomic layers in 2D materials, which effectively modulate the electron effective mass, charge redistribution, and band gap of GaSe. Overall, this work reveals a paradigm of band engineering based on layer numbers and moiré patterns that can modulate the electronic properties of 2D materials.

Low-Power AlGaN/GaN Triangular Microcantilever for Air Flow Detection

This paper investigates an AlGaN/GaN triangular microcantilever with a heated apex for airflow detection utilizing a very simple two-terminal sensor configuration. Thermal microscope images were used to verify that the apex region of the microcantilever reached significantly higher temperatures than other parts under applied voltage bias. The sensor response was found to vary linearly with airflow rate when tested over a range of airflow varying from 16 to 2000 sccm. The noise-limited flow volume measurement yielded ~4 sccm resolution, while the velocity resolution was found to be 0.241 cm/s, which is one of the best reported so far for thermal sensors. The sensor was able to operate at a very low power consumption level of ~5 mW, which is one of the lowest reported for these types of sensors. The intrinsic response time of the sensor was estimated to be on the order of a few ms, limited by its thermal properties. Overall, the microcantilever sensor, with its simple geometry and measurement configurations, was found to exhibit attractive performance metrics useful for various sensing applications.

Superradiant emission in a high-mobility two-dimensional electron gas

We use terahertz time-domain spectroscopy to study gallium arsenide two-dimensional electron gas samples in external magnetic field. We measure cyclotron decay as a function of temperature from 0.4 to10Kand a quantum confinement dependence of the cyclotron decay time belowT0=1.2K. In the wider quantum well, we observe a dramatic enhancement in the decay time due to the reduction in dephasing and the concomitant enhancement of superradiant decay in these systems. We show that the dephasing time in 2DEG's depends on both the scatteringrateand also on the distribution of scattering angles.

Coexistence of Both Localized Electronic States and Electron Gas at Rutile TiO2 Surfaces

Localized electron polarons formed by the coupling of excess electrons and ionic vibrations play a key role in the functionalities of materials. However, the mechanism of the coexistence of delocalized electrons and localized polarons remains underexplored. Here, we report the discovery of high-mobility two-dimensional electron gas at the rutile TiO₂ surface through argon ion irradiation-induced oxygen vacancies. Strikingly, the electron gas forms electron polarons at lower temperatures, resulting in an abrupt metal-insulator transition. Moreover, we find that the low-temperature conductivity in the insulating state is dominated by excess free electrons with a high mobility of ∼10³ cm² V^-1 s^-1 , whereas the carrier density is dramatically suppressed with decreasing temperature. Remarkably, we reveal that the application of an electric field can lead to a collapse of the localized states, resulting in a metallic state. These results reveal the strongly correlated/coupled nature between the localized electrons and high mobility electrons and offer a new pathway to probe and harvest the exotic electron state at the complex oxide surfaces. This article is protected by copyright. All rights reserved.

How a Ferroelectric Layer Can Tune a Two-Dimensional Electron Gas at the Interface of LaInO3 and BaSnO3: A First-Principles Study

The emerging interest in two-dimensional electron gases (2DEGs), formed at interfaces between two insulating oxide perovskites, poses a crucial fundamental question in view of future electronic devices. In the framework of density-functional theory, we investigate the possibility to control the characteristics of the 2DEG formed at the LaInO₃/BaSnO₃ interface by including a ferroelectric layer. To do so, we consider BaTiO₃ as a prototype example and examine how the orientation of the ferroelectric polarization impacts density and confinement of the 2DEG. We find that aligning the ferroelectric polarization toward (outward) the LaInO₃/BaSnO₃ interface leads to an accumulation (depletion) of the interfacial 2DEG. Varying its magnitude, we find a linear effect on the 2DEG charge density that is confined within the BaSnO₃ side. Analysis of the optimized geometries reveals that inclusion of the ferroelectric layer makes structural distortions at the LaInO₃/BaSnO₃ junction less pronounced, which, in turn, enhances the 2DEG density. Thicker ferroelectric layers allow for reaching higher polarization magnitude. We discuss the mechanisms behind all these findings and rationalize how the characteristics of both 2DEGs and 2D hole gases can be controlled in the considered heterostructures. Overall, our results can be generalized to other combinations of ferroelectric, polar, and nonpolar materials.

Synthesis of Oxide Interface-Based Two-Dimensional Electron Gas on Si

Two-dimensional electron gas (2DEG) at the interface of amorphous Al₂O₃/SrTiO₃ (aAO/STO) heterostructures has received considerable attention owing to its convenience of fabrication and relatively high mobility. The integration of these 2DEG heterostructures on a silicon wafer is highly desired for electronic applications but remains challanging up to date. Here, conductive aAO/STO heterostructures have been synthesized on a silicon wafer via a growth-and-transfer method. A scanning transmission electron microscopy image shows flat and close contact between STO membranes and a Si wafer. Electron energy loss spectroscopic measurements reveal the interfacial Ti valence state evolution, which identifies the formation of 2D charge carriers confined at the interface of aAO/STO. This work provides a feasible strategy for the integration of 2DEG on a silicon wafer and other desired substrates for potential functional and flexible electronic devices.

Magnetotransport in Graphene/Pb0.24Sn0.76Te Heterostructures: Finding a Way to Avoid Catastrophe

While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb_1-xSn_xTe (PST) are widely investigated for spintronic applications because graphene's high carrier mobility and PST's topologically protected surface states are attractive platforms for spin transport. Here, we combine monolayer graphene with PST and demonstrate a hybrid system with properties enhanced relative to the constituent parts. Using magnetotransport measurements, we find carrier mobilities up to 20 000 cm²/(V s) and a magnetoresistance approaching 100%, greater than either material prior to stacking. We also establish that there are two distinct transport channels and determine a lower bound on the spin relaxation time of 4.5 ps. The results can be explained using the polar catastrophe model, whereby a high mobility interface state results from a reconfiguration of charge due to a polar/nonpolar interface interaction. Our results suggest that proximity induced interface states with hybrid properties can be added to the still growing list of behaviors in these materials.

Nearly Ideal Two-Dimensional Electron Gas Hosted by Multiple Quantized Kronig-Penney States Observed in Few-Layer InSe

A theoretical ideal two-dimensional electron gas (2DEG) was characterized by a flat density of states independent of energy. Compared with conventional two-dimensional free-electron systems in semiconductor heterojunctions and noble metal surfaces, we report here the achievement of ideal 2DEG with multiple quantized states in few-layer InSe films. The multiple quantum well states (QWSs) in few-layer InSe films are found, and the number of QWSs is strictly equal to the number of atomic layers. The multiple stair-like DOS as well as multiple bands with parabolic dispersion both characterize ideal 2DEG features in these QWSs. Density functional theory calculations and numerical simulations based on quasi-bounded square potential wells described as the Kronig-Penney model provide a consistent explanation of 2DEG in the QWSs. Our work demonstrates that 2D van der Waals materials are ideal systems for realizing 2DEG hosted by multiple quantized Kronig-Penney states, and the semiconducting nature of the material provides a better chance for construction of high-performance electronic devices utilizing these states, for example, superlattice devices with negative differential resistance.

Giant bipolar unidirectional photomagnetoresistance

Positive magnetoresistance (PMR) and negative magnetoresistance (NMR) describe two opposite responses of resistance induced by a magnetic field. Materials with giant PMR are usually distinct from those with giant NMR due to different physical natures. Here, we report the unusual photomagnetoresistance in the van der Waals heterojunctions of WSe₂/quasi-two-dimensional electron gas, showing the coexistence of giant PMR and giant NMR. The PMR and NMR reach 1,007.5% at -9 T and -93.5% at 2.2 T in a single device, respectively. The magnetoresistance spans over two orders of magnitude on inversion of field direction, implying a giant unidirectional magnetoresistance (UMR). By adjusting the thickness of the WSe₂ layer, we achieve the maxima of PMR and NMR, which are 4,900,000% and -99.8%, respectively. The unique magnetooptical transport shows the unity of giant UMR, PMR, and NMR, referred to as giant bipolar unidirectional photomagnetoresistance. These features originate from strong out-of-plane spin splitting, magnetic field-enhanced recombination of photocarriers, and the Zeeman effect through our experimental and theoretical investigations. This work offers directions for high-performance light-tunable spintronic devices.NMR).

Indirect Measurement of Electron Energy Relaxation Time at Room Temperature in Two-Dimensional Heterostructured Semiconductors

Hot carriers are a critical issue in modern photovoltaics and miniaturized electronics. We present a study of hot electron energy relaxation in different two-dimensional electron gas (2DEG) structures and compare the measured values with regard to the dimensionality of the semiconductor formations. Asymmetrically necked structures containing different types of AlGaAs/GaAs single quantum wells, GaAs/InGaAs layers, or bulk highly and lowly doped GaAs formations were investigated. The research was performed in the dark and under white light illumination at room temperature. Electron energy relaxation time was estimated using two models of I-V characteristics analysis applied to a structure with n-n⁺ junction and a model of voltage sensitivity dependence on microwave frequency. The best results were obtained using the latter model, showing that the electron energy relaxation time in a single quantum well structure (2DEG structure) is twice as long as that in the bulk semiconductor.

Electronic properties of semiconductor quantum wires for shallow symmetric and asymmetric confinements

Quantum wires (QWs) and quantum point contacts (QPCs) have been realized in GaAs/AlGaAs heterostructures in which a two-dimensional electron gas resides at the interface between GaAs and AlGaAs layered semiconductors. The electron transport in these structures has previously been studied experimentally and theoretically, and a 0.7 conductance anomaly has been discovered. The present paper is motivated by experiments with a QW in shallow symmetric and asymmetric confinements that have shown additional conductance anomalies at zero magnetic field. The proposed device consists of a QPC that is formed by split gates and a top gate between two large electron reservoirs. This paper is focussed on the theoretical study of electron transport through a wide top-gated QPC in a low-density regime and is based on density functional theory. The electron-electron interaction and shallow confinement make the splitting of the conduction channel into two channels possible. Each of them becomes spin-polarized at certain split and top gates voltages and may contribute to conductance giving rise to additional conductance anomalies. For symmetrically loaded split gates two conduction channels contribute equally to conductance. For the case of asymmetrically applied voltage between split gates conductance anomalies may occur between values of 0.25(2e²/h) and 0.7(2e²/h) depending on the increased asymmetry in split gates voltages. This corresponds to different degrees of spin-polarization in the two conduction channels that contribute differently to conductance. In the case of a strong asymmetry in split gates voltages one channel of conduction is pinched off and just the one remaining channel contributes to conductance. We have found that on the perimeter of the anti-dot there are spin-polarized states. These states may also contribute to conductance if the radius of the anti-dot is small enough and tunneling between these states may occur. The spin-polarized states in the QPC with shallow confinement tuned by electric means may be used for the purposes of quantum technology.

InSbAs Two-Dimensional Electron Gases as a Platform for Topological Superconductivity

Topological superconductivity can be engineered in semiconductors with strong spin-orbit interaction coupled to a superconductor. Experimental advances in this field have often been triggered by the development of new hybrid material systems. Among these, two-dimensional electron gases (2DEGs) are of particular interest due to their inherent design flexibility and scalability. Here, we discuss results on a 2D platform based on a ternary 2DEG (InSbAs) coupled to in situ grown aluminum. The spin-orbit coupling in these 2DEGs can be tuned with the As concentration, reaching values up to 400 meV Å, thus exceeding typical values measured in its binary constituents. In addition to a large Landé g-factor of ∼55 (comparable to that of InSb), we show that the clean superconductor-semiconductor interface leads to a hard induced superconducting gap. Using this new platform, we demonstrate the basic operation of phase-controllable Josephson junctions, superconducting islands, and quasi-1D systems, prototypical device geometries used to study Majorana zero modes.

Strain-Induced Bandgap Enhancement of InSe Ultrathin Films with Self-Formed Two-Dimensional Electron Gas

Atomically thin indium selenide (InSe) is a representative two-dimensional (2D) family that have recently attracted extensive interest for their intriguing emerging physics and potential optoelectronic applications with high-performance. Here, by utilizing molecular beam epitaxy and scanning tunneling microscopy, we report a controlled synthesis of InSe thin films down to the monolayer limit and characterization of their electronic properties at atomic scale. Highly versatile growth conditions are developed to fabricate well crystalline InSe films, with a reversible and controllable phase transformation between InSe and In₂Se₃. The band gap size of InSe films, as enhanced by quantum confinement, increases with decreasing film thickness. Near various categories of lattice imperfections, the band gap becomes significantly enlarged, resulting in a type-I band alignments for lateral heterojunctions. Such band gap enhancement, as unveiled from our first-principles calculations, is ascribed to the local compressive strain imposed by the lattice imperfections. Moreover, InSe films host highly conductive 2D electron gas, manifesting prominent quasiparticle scattering signatures. The 2D electron gas is self-formed via substrate doping of electrons, which shift the Fermi level above the confinement-quantized conduction band. Our study identifies InSe ultrathin film as an appealing system for both fundamental research and potential applications in nanoelectrics and optoelectronics.

Display of Spin-Orbit Coupling at ReAlO3/SrTiO3 (Re = La, Pr, Nd, Sm, and Gd) Heterointerfaces

Complex oxide heterointerfaces provide a platform to manipulate spin-orbit coupling under the broken inversion symmetry. Moreover, their weak antilocalization (WAL) effect displays quantum coherent behavior due to the strong spin-orbit coupling. Herein, we break through the limitation of lattice mismatch at ReAlO₃/STO (Re = La, Pr, Nd, Sm, and Gd) heterointerfaces and obtain their two-dimensional electric gas (2DEG) by spin coating. The effect of different Re elements in the resulting quantum corrections on the conductivity is investigated. It is observed that the conductivity of heterointerfaces is reduced with larger atomic numbers due to the ionization potential of Re elements. Moreover, magnetoresistance (MR) measurements in a perpendicular or a parallel field distinctly uncover strong Rashba spin-orbit coupling (SOC) in ReAO/STO samples besides SAO/STO (Re = Sm) and GAO/STO (Re = Gd), and the effective fields of the SOC (H_so) gradually increase from LAO/STO (Re = La, H_so = 0.82 T) to NAO/STO (Re = Nd, H_so = 1.37 T) at 2 K. The competition between SOC scattering and inelastic scattering is revealed through a temperature-dependence study of MR, and the WAL-weak localization transition is at about 6 K. Furthermore, unambiguous results of the Kondo effect, nonlinear Hall, hysteresis loop, and Rashba SOC suggest the coexistence of WAL at the PAO/STO (Re = Pr) heterointerface with exchange coupling between the localized magnetic moment and the itinerant electron. These results pave a unique route for the exploration of spin-polarized 2DEGs at oxide heterointerfaces.

Investigation of edge states in artificial graphene nano-flakes

Graphene nano-flakes (GNFs) are predicted to host spin-polarized metallic edge states, which are envisioned for exploration of spintronics at the nanometer scale. To date, experimental realization of GNFs is only in its infancy because of the limitation of precise cutting or synthesizing methods at the nanometer scale. Here, we use low temperature scanning tunneling microscope to manipulate coronene molecules on a Cu(111) surface to build artificial triangular and hexagonal GNFs with either zigzag or armchair type of edges. We observe that an electronic state at the Dirac point emerges only in the GNFs with zigzag edges and localizes at the outmost lattice sites. The experimental results agree well with the tight-binding calculations. Our work renders an experimental confirmation of the predicated edge states of the GNFs.

Size-Controlled Spalling of LaAlO3/SrTiO3 Micromembranes

The ability to form freestanding oxide membranes of nanoscale thickness is of great interest for enabling material functionality and for integrating oxides in flexible electronic and photonic technologies. Recently, a route has been demonstrated for forming conducting heterostructure membranes of LaAlO₃ and SrTiO₃, the canonical system for oxide electronics. In this route, the epitaxial growth of LaAlO₃ on SrTiO₃ resulted in a strained state that relaxed by producing freestanding membranes with random sizes and locations. Here, we extend the method to enable self-formed LaAlO₃/SrTiO₃ micromembranes with control over membrane position, their lateral sizes from 2 to 20 μm, and with controlled transfer to other substrates of choice. This method opens up the possibility to study and use the two-dimensional electron gas in LaAlO₃/SrTiO₃ membranes for advanced device concepts.

Phase-shifting electron holography for accurate measurement of potential distributions in organic and inorganic semiconductors

Phase-shifting electron holography (PS-EH) is an interference transmission electron microscopy technique that accurately visualizes potential distributions in functional materials, such as semiconductors. In this paper, we briefly introduce the features of the PS-EH that overcome some of the issues facing the conventional EH based on Fourier transformation. Then, we present a high-precision PS-EH technique with multiple electron biprisms and a sample preparation technique using a cryo-focused-ion-beam, which are important techniques for the accurate phase measurement of semiconductors. We present several applications of PS-EH to demonstrate the potential in organic and inorganic semiconductors and then discuss the differences by comparing them with previous reports on the conventional EH. We show that in situ biasing PS-EH was able to observe not only electric potential distribution but also electric field and charge density at a GaAs p-n junction and clarify how local band structures, depletion layer widths and space charges changed depending on the biasing conditions. Moreover, the PS-EH clearly visualized the local potential distributions of two-dimensional electron gas layers formed at AlGaN/GaN interfaces with different Al compositions. We also report the results of our PS-EH application for organic electroluminescence multilayers and point out the significant potential changes in the layers. The proposed PS-EH enables more precise phase measurement compared to the conventional EH, and our findings introduced in this paper will contribute to the future research and development of high-performance semiconductor materials and devices.

Two-Dimensional Electron Gas at the Spinel/Perovskite Interface: Suppression of Polar Catastrophe by an Ultrathin Layer of Interfacial Defects

Two-dimensional electron gas (2DEG) at the interface between two insulating perovskite oxides has attracted much interest for both fundamental physics and potential applications. Here, we report the discovery of a new 2DEG formed at the interface between spinel MgAl₂O₄ and perovskite SrTiO₃. Transport measurements, electron microscopy imaging, and first-principles calculations reveal that the interfacial 2DEG is closely related to the symmetry breaking at the MgAl₂O₄/SrTiO₃ interface. The critical film thickness for the insulator-to-metal transition is approximately 32 Å, which is twice as thick as that reported on the widely studied LaAlO₃/SrTiO₃ system. Scanning transmission electron microscopy imaging indicates the formation of interfacial Ti-Al antisite defects with a thickness of ∼4 Å. First-principles density functional theory calculations indicate that the coexistence of the antisite defects and surface oxygen vacancies may explain the formation of interfacial 2DEG as well as the observed critical film thickness. The discovery of 2DEG at the spinel/perovskite interface introduces a new material platform for designing oxide interfaces with desired characteristics.

Electric-Field Control of Spin Current Generation and Detection in Ferromagnet-Free SrTiO3-Based Nanodevices

Spintronics entails the generation, transport, manipulation and detection of spin currents, usually in hybrid architectures comprising interfaces whose impact on performance is detrimental. In addition, how spins are generated and detected is generally material specific and determined by the electronic structure. Here, we demonstrate spin current generation, transport and electrical detection, all within a single non-magnetic material system: a SrTiO₃ two-dimensional electron gas (2DEG) with Rashba spin-orbit coupling. We show that the spin current is generated from a charge current by the 2D spin Hall effect, transported through a channel and reconverted into a charge current by the inverse 2D spin Hall effect. Furthermore, by adjusting the Fermi energy with a gate voltage we tune the generated and detected spin polarization and relate it to the complex multiorbital band structure of the 2DEG. We discuss the leading mechanisms of the spin-charge interconversion processes and argue for the potential of quantum oxide materials for future all-electrical low-power spin-based logic.

Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors

Flexible electronic technology has attracted great attention due to its wide range of potential applications in the fields of healthcare, robotics, and artificial intelligence, etc. In this work, we have successfully fabricated flexible AlGaN/GaN high-electron-mobility transistors (HEMTs) arrays through a low-damage and wafer-scale substrate transfer technology from a rigid Si substrate. The flexible AlGaN/GaN HEMTs have excellent electrical performances with the I_d,max achieving 290 mA/mm at V_gs = +2 V and the g_m,max reaching to 40 mS/mm. The piezotronic effect provides a different freedom to optimize device performances, and flexible HEMTs can endure the larger mechanical distortions. Based on the piezotronic effect, we applied an external stress to significantly modulate the electrical performances of flexible HEMTs. The piezotronic effect modulated flexible AlGaN/GaN HEMTs exhibit great potential in human-machine interface, intelligent microinductor systems, and active sensors, etc, and introduce an opportunity to sensing or feedback external mechanical stimuli and so on.

TiO2-SrTiO3 Biphase Nanoceramics as Advanced Thermoelectric Materials

The review embraces a number of research papers concerning the fabrication of oxide thermoelectric systems, with TiO2-SrTiO3 biphase ceramics being emphasized. The ceramics is particularly known for a two-dimensional electron gas (2DEG) forming spontaneously on the TiO2/SrTiO3 heterointerface (modulation doping), unlike ordinary 2DEG occurrence on specially fabricated thin film. Such effect is provided by the SrTiO3 conduction band edge being 0.40 and 0.20 eV higher than that for anatase and rutile TiO2, respectively. That is why, in the case of a checkered arrangement of TiO2 and SrTiO3 grains, the united 2D net is probably formed along the grain boundaries with 2DEG occurring there. To reach such conditions, there should be applied novelties in the field of ceramics materials science, because it is important to obtain highly dense material preserving small (nanoscale) grain size and thin interface boundary. The review also discusses some aspects of reactive spark plasma sintering as a promising method of preparing perovskite-oxide TiO2-SrTiO3 thermoelectric materials for high-temperature applications.

Highly Uniform Resistive Switching Performances Using Two-Dimensional Electron Gas at a Thin-Film Heterostructure for Conductive Bridge Random Access Memory

This research demonstrates, for the first time, the development of highly uniform resistive switching devices with self-compliance current for conductive bridge random access memory using two-dimensional electron gas (2DEG) at the interface of an Al₂O₃/TiO₂ thin-film heterostructure via atomic layer deposition (ALD). The cell is composed of Cu/Ti/Al₂O₃/TiO₂, where Cu/Ti and Al₂O₃ overlayers are used as the active/buffer metals and solid electrolyte, respectively, and the 2DEG at the interface of Al₂O₃/TiO₂ heterostructure, grown by the ALD process, is adopted as a bottom electrode. The Cu/Ti/Al₂O₃/TiO₂ device shows reliable resistive switching characteristics with excellent uniformity under a repetitive voltage sweep (direct current sweep). Furthermore, it exhibits a cycle endurance over 10⁷ cycles under short pulse switching. Remarkably, a reliable operation of multilevel data writing is realized up to 10⁷ cycles. The data retention time is longer than 10⁶ s at 85 °C. The uniform resistance switching characteristics are achieved via the formation of small (∼a few nm width) Cu filament with a short tunnel gap (<0.5 nm) owing to the 2DEG at the Al₂O₃/TiO₂ interface. The performance and operation scheme of this device may be appropriate in neuromorphic applications.

First Observation of Ferroelectricity in ∼1 nm Ultrathin Semiconducting BaTiO3 Films

The requirements of multifunctionality in thin-film systems have led to the discovery of unique physical properties and degrees of freedom, which exist only in film forms. With progress in growth techniques, one can decrease the film thickness to the scale of a few nanometers (∼nm), where its unique physical properties are still pronounced. Among advanced ultrathin film systems, ferroelectrics have generated tremendous interest. As a prototype ferroelectric, the electrical properties of BaTiO₃ (BTO) films have been extensively studied, and it has been theoretically predicted that ferroelectricity sustains down to ∼nm thick films. However, efforts toward determining the minimum thickness for ferroelectric films have been hindered by practical issues surrounding large leakage currents. In this study, we used ∼nm thick BTO films, exhibiting semiconducting characteristics, grown on a LaAlO₃/SrTiO₃ (LAO/STO) heterostructure. In particular, we utilized two-dimensional electron gas at the LAO/STO heterointerface as the bottom electrode in these capacitor junctions. We demonstrate that the BTO film exhibits ferroelectricity at room temperature, even when it is only ∼2 unit-cells thick, and the total thickness of the capacitor junction can be reduced to less than ∼4 nm. Observation of ferroelectricity in ultrathin semiconducting films and the resulting shrunken capacitor thickness will expand the applicability of ferroelectrics in the next generation of functional devices.

High-Performance Ultraviolet Light Detection Using Nano-Scale-Fin Isolation AlGaN/GaN Heterostructures with ZnO Nanorods

Owing to their intrinsic wide bandgap properties ZnO and GaN materials are widely used for fabricating passive-type visible-blind ultraviolet (UV) photodetectors (PDs). However, most of these PDs have a very low spectral responsivity R, which is not sufficient for detecting very low-level UV signals. We demonstrate an active type UV PD with a ZnO nanorod (NR) structure for the floating gate of AlGaN/GaN high electron mobility transistor (HEMT), where the AlGaN/GaN epitaxial layers are isolated by the nano-scale fins (NFIs) of two different fin widths (70 and 80 nm). In the dark condition, oxygen adsorbed at the surface of the ZnO NRs generates negative gate potential. Upon UV light illumination, the negative charge on the ZnO NRs is reduced due to desorption of oxygen, and this reversible process controls the source-drain carrier transport property of HEMT based PDs. The NFI PDs of a 70 nm fin width show the highest R of a ~3.2 × 10⁷ A/W at 340 nm wavelength among the solid-state UV PDs reported to date. We also compare the performances of NFI PDs with those of conventional mesa isolation (MI, 40 × 100 µm²). NFI devices show ~100 times enhanced R and on-off current ratio than those of MI devices. Due to the volume effect of the small active region, a much faster response speed (rise-up and fall-off times of 0.21 and 1.05 s) is also obtained from the NFI PDs with a 70 nm fin width upon the UV on-off transient.

Light-Controlled Nanoscopic Writing of Electronic Memories Using the Tip-Enhanced Bulk Photovoltaic Effect

The light control of nonvolatile nanoscale memories could represent a fundamental step toward novel optoelectronic devices with memory and logic functionalities. However, most of the proposed devices exhibit insufficient control in terms of the reversibility, data retention, photosensitivity, limited-photoactive area, and so forth. Here, in a proof-of-concept work, we demonstrate the use of the tip-enhanced bulk photovoltaic (BPV) effect to realize programmable nanoscopic writing of nonphotoactive electronic devices by light control. We show that electronic properties of solid-state memory devices can be reversibly and location-precisely manipulated in the nanoscale using the BPV effect in combination with the nanoscale contact connection, that is, atomic force microscopy (AFM) probe technique in this work. More than 10⁵% reversible switching of tunneling electroresistance of ferroelectric tunnel junctions is exclusively achieved by light control. Using the same light-controlled AFM probe technique, we also present precise nanoscopic and multiple-state writing of LaAlO₃/SrTiO₃ two-dimensional electron gas (2DEG)-based field-effect transistors. The tip-enhanced BPV effect can offer a novel avenue for reversible and multistate light control of a wide range of electronic memory devices in the nanoscale and may lead to more sophisticated functionalities in optoelectronic applications.

Unusual Electric and Optical Tuning of KTaO3-Based Two-Dimensional Electron Gases with 5d Orbitals

Controlling electronic processes in low-dimension electron systems is centrally important for both fundamental and applied researches. While most of the previous works focused on SrTiO₃-based two-dimensional electron gases (2DEGs), here we report on a comprehensive investigation in this regard for amorphous-LaAlO₃/KTaO₃ 2DEGs with the Fermi energy ranging from ∼13 meV to ∼488 meV. The most important observation is the dramatic variation of the Rashba spin-orbit coupling (SOC) as Fermi energy sweeps through 313 meV: The SOC effective field first jumps and then drops, leading to a cusp of ∼2.6 T. Above 313 meV, an additional species of mobile electrons emerges, with a 50-fold enhanced Hall mobility. A relationship between spin relaxation distance and the degree of band filling has been established in a wide range. It indicates that the maximal spin precession length is ∼70.1 nm and the maximal Rashba spin splitting energy is ∼30 meV. Both values are much larger than the previously reported ones. As evidenced by density functional theory calculation, these unusual phenomena are closely related to the distinct band structure of the 2DEGs composed of 5d electrons. The present work further deepens our understanding of perovskite conducting interfaces, particularly those composed of 5d transition-metal oxides.

Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al2O3/TiO2 Ultrathin (<10 nm) Film Heterostructures

We report the field-effect transistors using quasi-two-dimensional electron gas generated at an ultrathin (∼10 nm) Al₂O₃/TiO₂ heterostructure interface grown via atomic layer deposition (ALD) on a SiO₂/Si substrate without using a single crystal substrate. The 2DEG at the Al₂O₃/TiO₂ interface originates from oxygen vacancies generated at the surface of the TiO₂ bottom layer during ALD of the Al₂O₃ overlayer. High-density electrons (∼10¹⁴ cm^-2) are confined within a ∼2.2 nm distance from the Al₂O₃/TiO₂ interface, resulting in a high on-current of ∼12 μA/μm. The ultrathin TiO₂ bottom layer is easy to fully deplete, allowing an extremely low off-current, a high on/off current ratio over 10⁸, and a low subthreshold swing of ∼100 mV/decade. Via the implementation of ALD, a mature thin-film process can facilitate mass production as well as three-dimensional integration of the devices.

Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors

The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the gate induces highly anisotropic 2D electron and hole gases. Although the 2D hole gas in black phosphorus has reached high carrier mobilities that led to the observation of the integer quantum Hall effect, the improvement in the sample quality of the 2D electron gas (2DEG) has however been only moderate; quantum Hall effect remained elusive. Here, we obtain high quality black phosphorus 2DEG by defining the 2DEG region with a prepatterned graphite local gate. The graphite local gate screens the impurity potential in the 2DEG. More importantly, it electrostatically defines the edge of the 2DEG, which facilitates the formation of well-defined edge channels in the quantum Hall regime. The improvements enable us to observe precisely quantized Hall plateaus in electron-doped black phosphorus FET. Magneto-transport measurements under high magnetic fields further revealed a large effective mass and an enhanced Landé g-factor, which points to strong electron-electron interaction in black phosphorus 2DEG. Such strong interaction may lead to exotic many-body quantum states in the fractional quantum Hall regime.

Orbital Ordering of the Mobile and Localized Electrons at Oxygen-Deficient LaAlO3/SrTiO3 Interfaces

Interfacing different transition-metal oxides opens a route to functionalizing their rich interplay of electron, spin, orbital, and lattice degrees of freedom for electronic and spintronic devices. Electronic and magnetic properties of SrTiO₃-based interfaces hosting a mobile two-dimensional electron system (2DES) are strongly influenced by oxygen vacancies, which form an electronic dichotomy, where strongly correlated localized electrons in the in-gap states (IGSs) coexist with noncorrelated delocalized 2DES. Here, we use resonant soft-X-ray photoelectron spectroscopy to prove the e_g character of the IGSs, as opposed to the t_2g character of the 2DES in the paradigmatic LaAlO₃/SrTiO₃ interface. We furthermore separate the d _xy and d _xz/d _xz orbital contributions based on deeper consideration of the resonant photoexcitation process in terms of orbital and momentum selectivity. Supported by a self-consistent combination of density functional theory and dynamical mean field theory calculations, this experiment identifies local orbital reconstruction that goes beyond the conventional e_g- vs-t_2g band ordering. A hallmark of oxygen-deficient LaAlO₃/SrTiO₃ is a significant hybridization of the e_g and t_2g orbitals. Our findings provide routes for tuning the electronic and magnetic properties of oxide interfaces through "defect engineering" with oxygen vacancies.

Largely Enhanced Mobility in Trilayered LaAlO3/SrTiO3/LaAlO3 Heterostructures

LaAlO₃ (LAO)/SrTiO₃ (STO)/LaAlO₃ (LAO) heterostructures were epitaxially deposited on TiO₂-terminated (100) SrTiO₃ single-crystal substrates by laser molecular beam epitaxy. The electron Hall mobility of 1.2 × 10⁴ cm²/V s at 2 K was obtained in our trilayered heterostructures grown under 1 × 10^-5 Torr, which was significantly higher than that in single-layer 5 unit cells LAO (∼4 × 10³ cm²/V s) epitaxially grown on (100) STO substrates under the same conditions. It is believed that the enhancement of dielectric permittivity in the polar insulating trilayer can screen the electric field, thus reducing the carrier effective mass of the two-dimensional electron gas formed at the TiO₂ interfacial layer in the substrate, resulting in a largely enhanced mobility, as suggested by the first-principle calculation. Our results will pave the way for designing high-mobility oxide nanoelectronic devices based on LAO/STO heterostructures.

Injection of Spin-Polarized Electrons into a AlGaN/GaN Device from an Electrochemical Cell: Evidence for an Extremely Long Spin Lifetime

Spin-polarized electrons are injected from an electrochemical cell through a chiral self-assembled organic monolayer into a AlGaN/GaN device in which a shallow two-dimensional electron gas (2DEG) layer is formed. The injection is monitored by a microwave signal that indicates a coherent spin lifetime that exceeds 10 ms at room temperature. The signal was found to be magnetic field independent; however, it depends on the current of the injected electrons, on the length of the chiral molecules, and on the existence of 2DEG.

Tuning the Two-Dimensional Electron Gas at Oxide Interfaces with Ti-O Configurations: Evidence from X-ray Photoelectron Spectroscopy

A chemical redox reaction can lead to a two-dimensional electron gas at the interface between a TiO₂-terminated SrTiO₃ (STO) substrate and an amorphous LaAlO₃ capping layer. When replacing the STO substrate with rutile and anatase TiO₂ substrates, considerable differences in the interfacial conduction are observed. On the basis of X-ray photoelectron spectroscopy (XPS) and transport measurements, we conclude that the interfacial conduction comes from redox reactions, and that the differences among the materials systems result mainly from variations in the activation energies for the diffusion of oxygen vacancies at substrate surfaces.

Few-Electron Ultrastrong Light-Matter Coupling at 300 GHz with Nanogap Hybrid LC Microcavities

Ultrastrong light-matter coupling allows the exploration of new states of matter through the interaction of strong vacuum fields with huge electronic dipoles. By using hybrid dipole antenna-split ring resonator-based cavities with extremely small effective mode volumes V_eff/λ₀³ ≃ 6 × 10^-10 and surfaces S_eff/λ₀² ≃ 3.5 × 10^-7, we probe the ultrastrong light-matter coupling at 300 GHz to less than 100 electrons located in the last occupied Landau level of a high mobility two-dimensional electron gas, measuring a normalized coupling ratio of Ω_R/ω_c = 0.36. Effects of the extremely reduced cavity dimensions are observed as the light-matter coupled system is better described by an effective mass heavier than the uncoupled one. These results open the way to ultrastrong coupling at the single-electron level in two-dimensional electron systems.

Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3

The three-dimensional (3D) topological insulator (TI) Bi₂Se₃ exhibits topologically protected, linearly dispersing Dirac surface states (SSs). To access the intriguing properties of these SSs, it is important to distinguish them from the coexisting two-dimensional electron gas (2DEG) on the surface. Here, we use circularly polarized light to induce the inverse spin Hall effect in a Bi₂Se₃ thin film at different temperatures (i.e., from 77 to 300 K). It is demonstrated that the photoinduced inverse spin Hall effect (PISHE) of the top SSs and the 2DEG can be separated based on their opposite signs. The temperature and power dependence of the PISHE also confirms our method. Furthermore, it is found that the PISHE in the 2DEG is dominated by the extrinsic mechanism, as revealed by the temperature dependence of the PISHE.

Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO3/SrTiO3 Heterointerfaces

Modulating transport behaviors of two-dimensional electron gases are of critical importance for applications of the next-generation multifunctional oxide electronics. In this study, transport behaviors of LaAlO₃/SrTiO₃ heterointerfaces modified through the Ni dopant and the light irradiation have been investigated. Through the Ni dopant, the resistances increase significantly and a resistance upturn phenomenon due to the Kondo effect is observed at T < 40 K. Under a 360 nm light irradiation, the interfaces exhibit a persistent photoconductivity and a suppressed Kondo effect at low temperature due to the increased mobility measured through the photo-Hall method. Moreover, the relative changes in resistance of interfaces induced by light are increased from 800 to 6600% at T = 12 K with increasing the substitution of Ni, which is discussed by the band bending and the lattice effect due to the Ni dopant. This work paves the way for better controlling the emerging properties of complex oxide heterointerfaces and would be helpful for photoelectric device applications based on all-oxides.

Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface

Two-dimensional electron gas (2DEG) at the perovskite oxide interface exhibits a lot of exotic properties, presenting a promising platform for the exploration of emergent phenomena. While most of the previous works focused on SrTiO₃-based 2DEG, here we report on the fabrication of high-quality 2DEGs by growing an amorphous LaAlO₃ layer on a (001)-orientated KTaO₃ substrate, which is a 5d metal oxide with a polar surface, at a high temperature that is usually adopted for crystalline LaAlO₃. Metallic 2DEGs with a Hall mobility as high as ∼2150 cm²/(V s) and a sheet carrier density as low as 2 × 10¹² cm^-2 are obtained. For the first time, the gating effect on the transport process is studied, and its influence on spin relaxation and inelastic and elastic scattering is determined. Remarkably, the spin relaxation time can be strongly tuned by a back gate. It is reduced by a factor of ∼69 while the gate voltage is swept from -25 to +100 V. The mechanism that dominates the spin relaxation is elucidated.

Organic High Electron Mobility Transistors Realized by 2D Electron Gas

A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm² V^-1 s^-1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics.

Comparison Studies of Interfacial Electronic and Energetic Properties of LaAlO3/TiO2 and TiO2/LaAlO3 Heterostructures from First-Principles Calculations

By using first-principles electronic structure calculations, we studied electronic and energetic properties of perovskite oxide heterostructures with different epitaxial growth order between anatase TiO₂ and LaAlO₃. Two types of heterostructures, i.e., TiO₂ film grown on LaAlO₃ substrate (TiO₂/LaAlO₃) and LaAlO₃ film grown on TiO₂ substrate (LaAlO₃/TiO₂), were modeled. The TiO₂/LaAlO₃ model is intrinsically metallic and thus does not exhibit an insulator-to-metal transition as TiO₂ film thickness increases; in contrast, the LaAlO₃/TiO₂ model shows an insulator-to-metal transition as the LaAlO₃ film thickness increases up to 4 unit cells. The former model has a larger interfacial charge carrier density (n ∼ 10¹⁴ cm^-2) and smaller electron effective mass (0.47m_e) than the later one (n ∼ 10¹³ cm^-2, and 0.70m_e). The interfacial energetics calculations indicate that the TiO₂/LaAlO₃ model is energetically more favorable than the LaAlO₃/TiO₂ model, and the former has a stronger interface cohesion than the later model. This research provides fundamental insights into the different interfacial electronic and energetic properties of TiO₂/LaAlO₃ and LaAlO₃/TiO₂ heterostructures.

Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum

We demonstrate the transfer of the superconducting properties of NbTi, a large-gap high-critical-field superconductor, into an InAs heterostructure via a thin intermediate layer of epitaxial Al. Two device geometries, a Josephson junction and a gate-defined quantum point contact, are used to characterize interface transparency and the two-step proximity effect. In the Josephson junction, multiple Andreev reflections reveal near-unity transparency with an induced gap Δ* = 0.50 meV and a critical temperature of 7.8 K. Tunneling spectroscopy yields a hard induced gap in the InAs adjacent to the superconductor of Δ* = 0.43 meV with substructure characteristic of both Al and NbTi.

Enhanced thermopower in ZnO two-dimensional electron gas

Control of dimensionality has proven to be an effective way to manipulate the electronic properties of materials, thereby enabling exotic quantum phenomena, such as superconductivity, quantum Hall effects, and valleytronic effects. Another example is thermoelectricity, which has been theoretically proposed to be favorably controllable by reducing the dimensionality. Here, we verify this proposal by performing a systematic study on a gate-tuned 2D electron gas (2DEG) system formed at the surface of ZnO. Combining state-of-the-art electric-double-layer transistor experiments and realistic tight-binding calculations, we show that, for a wide range of carrier densities, the 2DEG channel comprises a single subband, and its effective thickness can be reduced to [Formula: see text] 1 nm at sufficiently high gate biases. We also demonstrate that the thermoelectric performance of the 2DEG region is significantly higher than that of bulk ZnO. Our approach opens up a route to exploit the peculiar behavior of 2DEG electronic states and realize thermoelectric devices with advanced functionalities.

Creating Two-Dimensional Electron Gas in Polar/Polar Perovskite Oxide Heterostructures: First-Principles Characterization of LaAlO3/A(+)B(5+)O3

By using first-principles electronic structure calculations, we explored the possibility of producing two-dimensional electron gas (2DEG) at the polar/polar (LaO)(+)/(BO2)(+) interface in the LaAlO3/A(+)B(5+)O3 (A = Na and K, B = Nb and Ta) heterostructures (HS). Unlike the prototype polar/nonpolar LaAlO3/SrTiO3 HS system where there exists a least film thickness of four LaAlO3 unit cells to have an insulator-to-metal transition, we found that the polar/polar LaAlO3/A(+)B(5+)O3 HS systems are intrinsically conducting at their interfaces without an insulator-to-metal transition. The interfacial charge carrier densities of these polar/polar HS systems are on the order of 10(14) cm(-2), much larger than that of the LaAlO3/SrTiO3 system. This is mainly attributed to two donor layers, i.e., (LaO)(+) and (BO2)(+) (B = Nb and Ta), in the polar/polar LaAlO3/A(+)B(5+)O3 systems, while only one (LaO)(+) donor layer in the polar/nonpolar LaAlO3/SrTiO3 system. In addition, it is expected that, due to less localized Nb 4d and Ta 5d orbitals with respect to Ti 3d orbitals, these LaAlO3/A(+)B(5+)O3 HS systems can exhibit potentially higher electron mobility because of their smaller electron effective mass than that in the LaAlO3/SrTiO3 system. Our results demonstrate that the electronic reconstruction at the polar/polar interface could be an alternative way to produce superior 2DEG in the perovskite-oxide-based HS systems.

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces

Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3 (LAO/STO), improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7) (Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35,000 cm(2) V(-1) s(-1). Moreover, two critical thicknesses for the LSAT/STO (001) interface are found, one at 5 unit cells for appearance of the 2DEG and the other at 12 unit cells for a peak in the carrier mobility. By contrast, the conducting (110) and (111) LSAT/STO interfaces only show a single critical thickness of 8 unit cells. This can be explained in terms of polar fluctuation arising from LSAT chemical composition. In addition to lattice mismatch and crystal symmetry at the interface, polar fluctuation arising from composition has been identified as an important variable to be tailored at the oxide interfaces to optimize the 2DEG transport.

Creating Two-Dimensional Electron Gas in Nonpolar/Nonpolar Oxide Interface via Polarization Discontinuity: First-Principles Analysis of CaZrO3/SrTiO3 Heterostructure

We studied strain-induced polarization and resulting conductivity in the nonpolar/nonpolar CaZrO3/SrTiO3 (CZO/STO) heterostructure (HS) system by means of first-principles electronic structure calculations. By modeling four types of CZO/STO HS-based slab systems, i.e., TiO2/CaO and SrO/ZrO2 interface models with CaO and ZrO2 surface terminations in each model separately, we found that the lattice-mismatch-induced compressive strain leads to a strong polarization in the CZO film and that as the CZO film thickness increases there exists an insulator-to-metal transition. The polarization direction and critical thickness of the CZO film for forming interfacial metallic states depend on the surface termination of CZO film in both types of interface models. In the TiO2/CaO and SrO/ZrO2 interface models with CaO surface termination, the strong polarization drives the charge transfer from the CZO film to the first few TiO2 layers in the STO substrate, leading to the formation of two-dimensional electron gas (2DEG) at the interface. In the HS models with ZrO2 surface termination, two polarization domains with opposite directions are in the CZO film, which results in the charge transfer from the middle CZO layer to the interface and surface, respectively, leading to the coexistence of the 2DEG on the interface and the two-dimensional hole gas (2DHG) at the middle CZO layer. These findings open a new avenue to achieve 2DEG (2DHG) in perovskite-based HS systems via polarization discontinuity.

Electron Transport at the TiO₂ Surfaces of Rutile, Anatase, and Strontium Titanate: The Influence of Orbital Corrugation

The two-dimensional electron gas in SrTiO3 created by an overlayer of amorphous LaAlO3 is compared with those at the TiO2-terminated surfaces of rutile and anatase. Differences in conductivity are explained in terms of the limiting Ti-O-Ti bond angles (orbital corrugation), band dispersion, and polaron formation. At 300 K, the sheet conductivity and mobility of anatase exceed those for SrTiO3 or rutile by one or two orders of magnitude, respectively. The electrons in rutile become localized below 25 K.