Ruthenium Single Atomic Sites Surrounding the Support Pit with Exceptional Photocatalytic Activity

Single-metal atomic sites and vacancies can accelerate the transfer of photogenerated electrons and enhance photocatalytic performance in photocatalysis. In this study, a series of nickel hydroxide nanoboards (Ni(OH)x NBs) with different loadings of single-atomic Ru sites (w-SA-Ru/Ni(OH)x) were synthesized via a photoreduction strategy. In such catalysts, single-atomic Ru sites are anchored to the vacancies surrounding the pits. Notably, the SA-Ru/Ni(OH)x with 0.60 wt % Ru loading (0.60-SA-Ru/Ni(OH)x) exhibits the highest catalytic performance (27.6 mmol g-1 h-1) during the photocatalytic reduction of CO2 (CO2RR). Either superfluous (0.64 wt %, 18.9 mmol g-1 h-1; 3.35 wt %, 9.4 mmol-1 h-1) or scarce (0.06 wt %, 15.8 mmol g-1 h-1; 0.29 wt %, 21.95 mmol g-1 h-1; 0.58 wt %, 23.4 mmol g-1 h-1) of Ru sites have negative effect on its catalytic properties. Density functional theory (DFT) calculations combined with experimental results revealed that CO2 can be adsorbed in the pits; single-atomic Ru sites can help with the conversion of as-adsorbed CO2 and lower the energy of *COOH formation accelerating the reaction; the excessive single-atomic Ru sites occupy vacancies that retard the completion of CO2RR.

The Controllable Mechanical Properties of Coiled Carbon Nanotubes with Stone-Wales and Vacancy Defects

Coiled carbon nanotubes (CCNTs) as a promising nanometer scale spring are investigated for the effect of the defects on the tensile mechanical properties of CCNTs by using molecular dynamics (MD) simulations. Six samples of defective CCNTs are constructed by introducing the defects in the different positions. The results show an obvious decrease in the spring constant and elastic limit of defective CCNTs, which results in the lower energy storage ability during the elastic range compared with the perfect CCNTs. However, the defected CCNTs exhibit better ductility (138.9%) and higher energy absorbing ability (1539.93 J/g) during the fracture process since introduced defects change the deformation pattern. Furthermore, among the defected CCNTs, the stiffness (1.48~1.93 nN/nm), elastic limit (75.2~88.7%), ductility (108.5~138.9%), and deformation pattern can be adjusted by changing the position or the type of defects. This study firstly provides insight into the effects of Stone-Wales (SW) and vacancy defects on the mechanical properties of CCNTs, and the obtained results are meaningful for designing CCNTs with specified properties by introducing defects.

Deciphering Vacancy Defect Evolution of 2D MoS2 for Reliable Transistors

Two-dimensional (2D) MoS2 is an excellent candidate channel material for next-generation integrated circuit (IC) transistors. However, the reliability of MoS2 is of great concern due to the serious threat of vacancy defects, such as sulfur vacancies (VS). Evaluating the impact of vacancy defects on the service reliability of MoS2 transistors is crucial, but it has always been limited by the difficulty in systematically tracking and analyzing the changes and effects of vacancy defects in the service environment. Here, a simulated initiator is established for deciphering the evolution of vacancy defects in MoS2 and their influence on the reliability of transistors. The results indicate that VS below 1.3% are isolated by slow enrichment during initiation. Over 1.3% of VS tend to enrich in pairs and over 3.5% of the enriched VS easily evolve into nanopores. The enriched VS with electron doping in the channel cause the threshold voltage (Vth) negative drift approaching 6 V, while the expanded nanopores initiate the Vth roll-off and punch-through of transistors. Finally, sulfur steam deposition has been proposed to constrain VS enrichment, and reliable MoS2 transistors are constructed. Our research provides a new method for deciphering and identifying the impact of defects.

Facile and Scalable Mechanochemical Synthesis of Defective MoS2 with Ru Single Atoms Toward High-Current-Density Hydrogen Evolution

Designing a facile strategy to prepare catalysts with highly active sites are challenging for large-scale implementation of electrochemical hydrogen production. Herein, a straightforward and eco-friendly method by high-energy mechanochemical ball milling for mass production of atomic Ru dispersive in defective MoS2 catalysts (Ru1 @D-MoS2 ) is developed. It is found that single atomic Ru doping induces the generation of S vacancies, which can break the electronic neutrality around Ru atoms, leading to an asymmetrical distribution of electrons. It is also demonstrated that the Ru1 @D-MoS2 exhibits superb alkaline hydrogen evolution enhancement, possibly attributing to this electronic asymmetry. The overpotential required to deliver a current density of 10 mA cm-2 is as low as 107 mV, which is much lower than that of commercial MoS2 (C-MoS2 , 364 mV). Further density functional theory (DFT) calculations also support that the vacancy-coupled single Ru enables much higher electronic distribution asymmetry degree, which could regulate the adsorption energy of intermediates, favoring the water dissociation and the adsorption/desorption of H*. Besides, the long-term stability test under 500 mA cm-2 further confirms the robust performance of Ru1 @D-MoS2 . Our strategy provides a promising and practical way towards large-scale preparation of advanced HER catalysts for commercial applications.

Effect of vacancy defect and strain on the structural, electronic and magnetic properties of carbon nitride 2D monolayers by DFTB method

We investigate the electronic and magnetic properties of CnNm(C₆N₆, C₂N, C₃N and C₃N₄) using density functional tight-binding (DFTB) method. We find that these compounds are dynamically stable and their electronic band gaps are in the range of 0.59-3.28 eV. We show that the electronic structure is modulated by strain and the semiconducting behavior is well preserved except for C₃N at +5% biaxial strain, where a transition from semiconductor to metal was observed. Under +3% biaxial strain, C₃N₄undergoes a transition from an indirect (K-Γ) to a direct (Γ-Γ) band gap. Moreover, band gap of C₂N transforms from direct (Γ-Γ) to indirect (M-Γ) under +4% biaxial strain. However, no change in the nature of the band gap of C₆N₆. Further, when the studied materials under uniaxial tensile strain, their bandgaps reduce. Our theoretical study showed that an indirect-to-direct nature transition may occur for C₆N₆and for C₃N₄, which broadens their applications. On the other hand, magnetism is observed in all N-vacancy defected CnNm, which encourages its application in spintronic. Moreover, calculations of formation energies indicate that N-vacancy is energetically more favorable than C-vacancy in both C₂N and C₃N₄. Opposite behavior found for C₆N₆and C₃N.

Vacancy Defects in 2D Transition Metal Dichalcogenide Electrocatalysts: From Aggregated to Atomic Configuration

Vacancy defect engineering has been well leveraged to flexibly shape comprehensive physicochemical properties of diverse catalysts. In particular, growing research effort has been devoted to engineering chalcogen anionic vacancies (S/Se/Te) of 2D transition metal dichalcogenides (2D TMDs) toward the ultimate performance limit of electrocatalytic hydrogen evolution reaction (HER). In spite of remarkable progress achieved in the past decade, systematic and in-depth insights into the state-of-the-art vacancy engineering for 2D-TMDs-based electrocatalysis are still lacking. Herein, this review delivers a full picture of vacancy engineering evolving from aggregated to atomic configurations covering their development background, controllable manufacturing, thorough characterization, and representative HER application. Of particular interest, the deep-seated correlations between specific vacancy regulation routes and resulting catalytic performance improvement are logically clarified in terms of atomic rearrangement, charge redistribution, energy band variation, intermediate adsorption-desorption optimization, and charge/mass transfer facilitation. Beyond that, a broader vision is cast into the cutting-edge research fields of vacancy-engineering-based single-atom catalysis and dynamic structure-performance correlations across catalyst service lifetime. Together with critical discussion on residual challenges and future prospects, this review sheds new light on the rational design of advanced defect catalysts and navigates their broader application in high-efficiency energy conversion and storage fields.

Lowering Contact Resistances of Two-Dimensional Semiconductors by Memristive Forming

Two-dimensional semiconductors have great potential for beyond-silicon electronics. However, because of the lack of controllable doping methods, Fermi level pinning, and van der Waals (vdW) gaps at the metal-semiconductor interfaces, these devices exhibit high electrical contact resistances, restricting their practical applications. Here, we report a general contact-resistance-lowering strategy by constructing vertical metal-semiconductor-metal memristor structures at the contact regions and setting them into a nonvolatile low-resistance state through a memristive forming process. Through this, we reduce the contact resistances of MoS₂ field-effect transistors (FETs) by at least one order of magnitude and improve the on-state current densities of MoTe₂ FETs by about two orders of magnitude. We also demonstrate that this strategy is applicable to other two-dimensional semiconductors, including MoSe₂, WS₂, and WSe₂, and a variety of contact metals, including Au, Cu, Ni, and Pd. The good stability and universality indicate the great potential for technological applications.

Thermal transport in porous graphene with coupling effect of nanopore shape and defect concentration

Thermal conductivity of porous graphene can be affected by defect concentration, nanopore shape and distribution, and it is hard to clarify the effects due to the correlation of those factors. In this work, molecular dynamics simulation is used to compare the thermal conductivity of graphene with three shapes of regularly arranged nanopores. The results prove the dominant role of defect concentration under certain circumstances in reducing thermal conductivity, while the coupling effect of nanopore shape should be noticed. When the atoms at the local phonon scattering area around each nanopore are properly removed, the abnormal increment of thermal conductivity can be detected with the increase of defect concentration. Heat flux vector angles can effectively characterize the local phonon scattering area, which can be used to describe the effect of nanopore shape. The coupling effect of defect concentration and pore shape with similar heat flux path is clarified according to this process. By adjusting vertex angle of triangle defect, there is a balanced state of the effect factors between the variation of defect concentration and the same phonon scattering area. It provides a possible way to describe the weighing factors of the coupling effect. The results suggest a feasible approach to optimize and regulate thermal properties of porous graphene in nanodevice.

Direct transformation of equilateral hexagonal Frank vacancy loops to stacking fault tetrahedra under thermal fluctuation

Stacking fault tetrahedra (SFTs) are highly interesting three-dimensional vacancy defects in quenched, plastically deformed or irradiated face-centered-cubic metals and have a significant impact on the properties and subsequent microstructural evolution of the materials. Their formation mechanism and stability relative to two-dimensional vacancy loops are still debated. Equilateral hexagonal Frank vacancy loops (faulted, sessile) observed in microscopy have been considered unable to directly transform to SFTs due to separation of Shockley partial dislocations as well as embryonic stacking faults. Here using sufficiently long (up to tens of nanoseconds) molecular dynamic simulations, we demonstrate that such a transformation can in fact take place spontaneously at elevated temperatures under thermal fluctuation, reducing potential energy of defected atoms by <0.05 eV/atom. The transformation becomes easier with increasing temperature or decreasing loop size.

Defect-Engineered Hydroxylated Mesoporous Spinel Oxides as Bifunctional Electrocatalysts for Oxygen Reduction and Evolution Reactions

In this work, defect-rich ordered mesoporous spinel oxides, including CoCo2O4, NiCo2O4, and ZnCo2O4, were developed as bifunctional electrocatalysts toward oxygen reduction and evolution reactions (ORR and OER, respectively). The materials are synthesized via nanocasting and modified by chemical treatment with 0.1 M NaBH4 solution to enhance the defect concentration. The synthesized samples have metal and oxygen divacancies (VCo + VO) as the primary defect sites, as indicated by positron annihilation lifetime spectroscopy (PALS). Cation substitution in the spinel structure induces a higher number of oxygen vacancies. The increased number of surface defects and the synergistic effect between two incorporated metals provide a high activity in both the OER and ORR in the case of NiCo2O4 and ZnCo2O4. Especially, ZnCo2O4 exhibits the highest OER/ORR activity. The defect engineering with 0.1 M NaBH4 solution results in a metal-hydroxylated surface (M-OH) and enhanced the catalytic activity for the post-treated metal oxides in the ORR and OER. This fundamental investigation of the defective structure of the mixed metal oxides offers some useful insights into further development of highly active electrocatalysts through defect engineering methods.

Simple Structural Descriptor Obtained from Symbolic Classification for Predicting the Oxygen Vacancy Defect Formation of Perovskites

Symbolic classification is an approach of interpretable machine learning for building mathematical formulas that fit certain data sets. In this work, symbolic classification is used to establish the relationship between oxygen vacancy defect formation energy and structural features. We find a structural descriptor n_a(r_a/E_na - r_b), where n_a is the valence of the a-site ion, r_a is the radius of the a-site ion, E_na is the electronegativity of the a-site ion, and r_b is the radius of the b-site ion. It accelerates the screening of defect-free oxide perovskites in advance of density functional theory (DFT) calculations and experimental characterization. Our results demonstrate the potential of symbolic classification for accelerating the data-driven design and discovery of materials with improved properties.

Investigation of vacancy defects and substitutional doping in AlSb monolayer with double layer honeycomb structure: a first-principles calculation

The experimental knowledge of the AlSb monolayer with double layer honeycomb structure is largely based on the recent publication (Le Qinet al2021ACS Nano158184), where this monolayer was recently synthesized. Therefore, the aim of our research is to consequently explore the effects of substitutional doping and vacancy point defects on the electronic and magnetic properties of the novel hexagonal AlSb monolayer. Besides experimental reports, the phonon band structure and cohesive energy calculations confirm the stability of the AlSb monolayer. Its direct bandgap has been estimated to be 0.9 eV via the hybrid functional method, which is smaller than the value of 1.6 eV of bulk material. The majority of vacancy defects and substitutional dopants change the electronic properties of the AlSb monolayer from semiconducting to metallic. Moreover, the Mg_Sbimpurity has demonstrated the addition of ferromagnetic behavior to the material. It is revealed through the calculation of formation energy that in Al-rich conditions, the vacant site of V_Sbis the most stable, while in Sb-rich circumstances the point defect of V_Algets the title. The formation energy has also been calculated for the substitutional dopants, showing relative stability of the defected structures. We undertook this theoretical study to inspire many experimentalists to focus their efforts on AlSb monolayer growth incorporating different impurities. It has been shown here that defect engineering is a powerful tool to tune the properties of novel AlSb two-dimensional monolayer for advanced nanoelectronic applications.

Modulating Water Slip Using Atomic-Scale Defects: Friction on Realistic Hexagonal Boron Nitride Surfaces

Atomic-scale defects are ubiquitous in nanomaterials, yet their role in modulating fluid flow is inadequately understood. Hexagonal boron nitride (hBN) is an important two-dimensional material with applications in desalination and osmotic power. Although pristine hBN offers higher friction to the flow of water than graphene, we show here that certain defects can enhance water slippage on hBN. Using classical molecular dynamics simulations assisted by quantum-mechanical density functional theory, we compute the friction coefficient of water on hBN containing various vacancies (B, N, BN, B₂N, and B₃N) and the Stone-Wales defect. By investigating two defect concentrations, we obtain friction coefficients ranging from 0.4 to 2.6 times that of pristine hBN, leading to a maximum water slip length of 18.1 nm on hBN with a N vacancy or a Stone-Wales defect. Our work informs the use of defects to tune water flow and reveals defective hBN as an alternative high-slip surface to graphene.

Thermal transport in monolayer zinc-sulfide: effects of length, temperature and vacancy defects

Of late, atomically thin two-dimensional zinc-sulfide (2D-ZnS) shows great potential for advanced nanodevices and as a substitute to graphene and transition metal di-chalcogenides owing to its exceptional optical and electronic properties. However, the functional performance of nanodevices significantly depends on the effective heat management of the system. In this paper, we explored the thermal transport properties of 2D-ZnS through molecular dynamics simulations. The impact of length, temperature, and vacancy defects on the thermal properties of 2D-ZnS are systematically investigated. We found that the thermal conductivity (TC) rises monotonically with increasing sheet length, and the bulk TC of ∼30.67 W mK^-1is explored for an infinite length ZnS. Beyond room temperature (300 K), the TC differs from the usual 1/Trule and displays an abnormal, slowly declining behavior. The point vacancy (PV) shows the largest decrease in TC compared to the bi vacancy (BV) defects. We calculated phonon modes for various lengths, temperatures, and vacancies to elucidate the TC variation. Conversely, quantum corrections are used to avoid phonon modes' icing effects on the TC at low temperatures. The obtained phonon density of states (PDOS) shows a softening and shrinking nature with increasing temperature, which is responsible for the anomaly in the TC at high temperatures. Owing to the increase of vacancy concentration, the PDOS peaks exhibit a decrease for both types of defects. Moreover, the variation of the specific heat capacity and entropy with BV and PV signify our findings of 2D-ZnS TC at diverse concentrations along with the different forms of vacancies. The results elucidated in this study will be a guide for efficient heat management of ZnS-based optoelectronic and nano-electronic devices.

Acid-Etched Co3O4 Nanoparticles on Nickel Foam: The Highly Reactive (311) Facet and Enriched Defects for Boosting Methanol Oxidation Electrocatalysis

The confirmation and regulation of active sites are particularly critical for the design of methanol oxidation reaction (MOR) catalysts. Here, an acid etching method for facet control combined with defect construction was utilized to synthesize Co₃O₄ nanoparticles on nickel foam for preferentially exposing the (311) facet with enriched oxygen vacancies (V_O). The acid-leached oxides exhibited superior MOR activity with a mass activity of 710.94 mA mg^-1 and an area-specific activity of 3.390 mA cm^-2 as a result of (i) abundant active sites for MOR promoted by V_O along with the highly active (311) facet being exposed and (ii) phase purification-reduced adsorption energy (E_ads) of methanol molecules. Ex situ X-ray photoelectron spectroscopy proved that highly active CoOOH obtained via the activation of plentiful Co²⁺ effectively improved the MOR. Density functional theory calculations confirmed that the selective exposed (311) facet has the lowest E_ads for CH₃OH molecules. This work puts forward acid etching as the facet modification and defect engineer for nanostructured non-noble catalysts, which is expected to result in superior electrochemical performance required for advanced alkaline direct methanol fuel cells.

How Do Defects in Carbon Nanostructures Regulate the Photoinduced Electron Transfer Processes? The Case of Phenine Nanotubes

Photoinduced electron transfer is studied in a series of inclusion complexes of structurally modified phenine nanotubes (pNT) with C70 using the TD-DFT method. Analysis of electronic properties of the complexes shows that the electron transfer is infeasible in pNT_4d⊃C70 built on the tetrameric array of [6]cyclo-meta-phenylene ([6]CMP) units. However, replacing one or more [6]CMP units with a coronene moiety enables electron transfer from pNT to C70 . The generation of the charge separated states from the lowest locally excited states occurs on a sub-nanosecond time scale. Depending on the number of the [6]CMP units, the charge recombination rate varies from 1.8 ⋅ 107 to 3.1 ⋅ 102  s-1 , i. e., five orders of magnitude.

Mechanics of penta-graphene with vacancy defects under large amplitude tensile and shear loading

Penta-graphene is a new two-dimensional metastable carbon allotrope composed entirely of carbon pentagons with unique electronic and mechanical properties. In this work we evaluate the mechanical properties of new classes of defective penta-graphene (DPG) subjected to tensile and shear loading by using molecular dynamics simulations. The types of defects considered here are monovacancy at either 4-coordinated C1 site or 3-coordinated C2 site, and double vacancy (DV). We focus in particular on the effects of the different topologies of defects and their concentrations on the elastic constants and the nonlinear mechanics of this allotropic form of carbon. The results indicate that DPG has a plastic behavior similar to pristine penta-graphene, which is caused by the irreversible pentagon-to-polygon structural transformation occurring during tensile and shear loading. The tensile and shear moduli decrease linearly with the concentration of defects. Monotonic reductions of the tensile yield and shear stresses are also present but less pronounced, while the yield strains are unaffected. Penta-graphene with 4-coordinated and DVs feature a change of the Poisson's ratio from negative to positive when the defect concentration rises to about 3% and 6%. Temperature can trigger structural reconstruction for free-standing DPG. The critical transition temperature increases due to the vacancy defects and the defects can delay the structure transition. These findings are expected to provide important guidelines for the practical applications of penta-graphene based micro/nano electromechanical systems.

Hierarchical 3D Architectured Ag Nanowires Shelled with NiMn-Layered Double Hydroxide as an Efficient Bifunctional Oxygen Electrocatalyst

Herein, we report hierarchical 3D NiMn-layered double hydroxide (NiMn-LDHs) shells grown on conductive silver nanowire (Ag NWs) cores as efficient, low-cost, and durable oxygen reduction reaction (ORR)/oxygen evolution reaction (OER) bifunctional electrocatalysts for metal-air batteries. The hierarchical 3D architectured Ag NW@NiMn-LDH catalysts exhibit superb OER/ORR activities in alkaline conditions. The outstanding bifunctional activities of Ag NW@NiMn-LDHs are essentially attributed to increasing both site activity and site populations. The synergistic contributions from the hierarchical 3D open-pore structure of the LDH shells, improved electrical conductivity, and small thickness of the LDHs shells are associated with more accessible site populations. Moreover, the charge transfer between Ag cores and metals of LDH shells and the formation of defective and distorted sites (less coordinated Ni and Mn sites) strongly enhance the site activity. Thus, Ag NW@NiMn-LDH hybrids exhibit a 0.75 V overvoltage difference between ORR and OER with excellent durability for 30 h, demonstrating the distinguished bifunctional electrocatalyst reported to date. Interestingly, the homemade rechargeable Zn-air battery using the hybrid Ag NW@NiMn-LDHs (1:2) catalyst as the air electrode exhibits a charge-discharge voltage gap of ∼0.77 V at 10 mA cm^-2 and shows excellent cycling stability. Thus, the concept of the hierarchical 3D architecture of Ag NW@NiMn-LDHs considerably advances the practice of LDHs toward metal-air batteries and oxygen electrocatalysts.

Research Progress on Thermal Conductivity of Graphdiyne Nanoribbons and its Defects: A Review

BACKGROUND

Graphdiyne has a unique pi-conjugated structure, perfect pore distribution and adjustable electronic properties of sp2, sp hybrid planar framework. Due to the presence of acetylenic bonds, it has more excellent properties compared to grapheme, such as a unique structure-dependent Dirac cone, abundant carbon bonds and a large bandgap. As one of the important raw materials for nanodevices, it is extremely important to study the thermal properties of graphdiyne nanoribbon.

OBJECTIVE

This paper mainly introduces and discusses recent academic research and patents on the preparation methods and thermal conductivity of graphdiyne nanoribbons. Besides, the applications in engineering and vacancy defects in the preparation process of graphdiyne are described.

METHODS

Firstly, taking thermal conductivity as an index, the thermal conductivity of graphdiyne with various vacancy defects is discussed from the aspects of length, defect location and defect type. In addition, the graphdiyne nanoribbons were laterally compared with the thermal conductivity of the graphene nanoribbons.

RESULTS

The thermal conductivity of graphdiyne with defects increases with the length and width, which is lower than the intrinsic graphdiyne. The thermal conductivity of the acetylene chain lacking one carbon atom is higher than the one lacking the benzene ring. Typically, the thermal conductivity is larger in armchair than that of zigzag in the same size. Moreover the thermal conductivity of nanoribbons with double vacancy defects is lower than those nanoribbons with single vacancy defects, which can also decrease with the increase of temperature and the number of acetylene chains. The thermal conductivity is not sensitive to shear strain.

CONCLUSION

Due to the unique structure and electronic characteristics, graphdiyne has provoked an extensive research interest in the field of nanoscience. Graphdiyne is considered as one of the most promising materials of next-generation electronic devices.

Tensile and Interfacial Loading Characteristics of Boron Nitride-Carbon Nanosheet Reinforced Polymer Nanocomposites

The discovery of hybrid boron nitride–carbon (BN–C) nanostructures has triggered enormous research interest in the design and fabrication of new generation nanocomposites. The robust design of these nanocomposites for target applications requires their mechanical strength to be characterized with a wide range of factors. This article presents a comprehensive study, with the aid of molecular dynamics analysis, of the tensile loading mechanics of BN–C nanosheet reinforced polyethylene (PE) nanocomposites. It is observed that the geometry and lattice arrangement of the BN–C nanosheet influences the tensile loading characteristics of the nanocomposites. Furthermore, defects in the nanosheet can severely impact the tensile loading resistance, the extent of which is determined by the defect’s location. This study also found that the tensile loading resistance of nanocomposites tends to weaken at elevated temperatures. The interfacial mechanics of the BN–C nanocomposites are also investigated. This analysis revealed a strong dependency with the carbon concentration in the BN–C nanosheet.

Room-Temperature Ultrabroadband Photodetection with MoS2 by Electronic-Structure Engineering Strategy

Photodetection using semiconductors is critical for capture, identification, and processing of optical information. Nowadays, broadband photodetection is limited by the underdeveloped mid-IR photodetection at room temperature (RT), primarily as a result of the large dark currents unavoidably generated by the Fermi-Dirac distribution in narrow-bandgap semiconductors, which constrains the development of some modern technologies and systems. Here, an electronic-structure strategy is proposed for designing ultrabroadband covering mid- and even far-IR photodetection materials operating at RT and a layered MoS₂ is manifested with an engineered bandgap of 0.13 eV and modulated electronic state density. The sample is designed by introducing defect energy levels into layered MoS₂ and its RT photodetection is demonstrated for wavelengths from 445 nm to 9.5 µm with an electronic state density-dependent peak photoresponsivity of 21.8 mA W^-1 in the mid-IR region, the highest value among all known photodetectors. This material should be a promising candidate for modern optoelectronic devices and offers inspiration for the design of other optoelectronic materials.

Buckling Analysis of Vacancy-Defected Graphene Sheets by the Stochastic Finite Element Method

Vacancy defects are unavoidable in graphene sheets, and the random distribution of vacancy defects has a significant influence on the mechanical properties of graphene. This leads to a crucial issue in the research on nanomaterials. Previous methods, including the molecular dynamics theory and the continuous medium mechanics, have limitations in solving this problem. In this study, the Monte Carlo-based finite element method, one of the stochastic finite element methods, is proposed and simulated to analyze the buckling behavior of vacancy-defected graphene. The critical buckling stress of vacancy-defected graphene sheets deviated within a certain range. The histogram and regression graphs of the probability density distribution are also presented. Strengthening effects on the mechanical properties by vacancy defects were detected. For high-order buckling modes, the regularity and geometrical symmetry in the displacement of graphene were damaged because of a large amount of randomly dispersed vacancy defects.

Effective Mechanical Properties and Thickness Determination of Boron Nitride Nanosheets Using Molecular Dynamics Simulation

Research in boron nitride nanosheets (BNNS) has evoked significant interest in the field of nano-electronics, nanoelectromechanical (NEMS) devices, and nanocomposites due to its excellent physical and chemical properties. Despite this, there has been no reliable data on the effective mechanical properties of BNNS, with the literature reporting a wide scatter of strength data for the same material. To address this challenge, this article presents a comprehensive analysis on the effect of vital factors which can result in variations of the effective mechanical properties of BNNS. Additionally, the article also presents the computation of the correct wall thickness of BNNS from elastic theory equations, which is an important descriptor for any research to determine the mechanical properties of BNNS. It was predicted that the correct thickness of BNNS should be 0.106 nm and the effective Young's modulus to be 2.75 TPa. It is anticipated that the findings from this study could provide valuable insights on the true mechanical properties of BNNS that could assist in the design and development of efficient BN-based NEMS devices, nanosensors, and nanocomposites.

Vibration Analysis of Vacancy Defected Graphene Sheets by Monte Carlo Based Finite Element Method

The stochastic distributed placement of vacancy defects has evident effects on graphene mechanical property, which is a crucial and challenged issue in the field of nanomaterial. Different from the molecular dynamic theory and continuum mechanics theory, the Monte Carlo based finite element method (MC-FEM) was proposed and performed to simulate vibration behavior of vacancy defected graphene. Based on the Monte Carlo simulation, the difficulties in random distributed location of vacancy defects were well overcome. The beam element was chosen to represent the exact atomic lattice of the graphene. The results of MC-FEM have a satisfied agreement with that in the reported references. The natural frequencies in the certain vibration mode were captured to observe the mechanical property of vacancy defected graphene sheets. The discussion about the parameters corresponding with geometry and material property was accomplished by probability theory and mathematical statistics.

Atomic-Level Co3O4 Layer Stabilized by Metallic Cobalt Nanoparticles: A Highly Active and Stable Electrocatalyst for Oxygen Reduction

Developing atomic-level transition oxides may be one of the most promising ways for providing ultrahigh electrocatalytic performance for oxygen reduction reaction (ORR), compared with their bulk counterparts. In this article, we developed a set of atomically thick Co₃O₄ layers covered on Co nanoparticles through partial reduction of Co₃O₄ nanoparticles using melamine as a reductive additive at an elevated temperature. Compared with the original Co₃O₄ nanoparticles, the synthesized Co₃O₄ with a thickness of 1.1 nm exhibits remarkably enhanced ORR activity and durability, which are even higher than those obtained by a commercial Pt/C in an alkaline environment. The superior activity can be attributed to the unique physical and chemical structures of the atomic-level oxide featuring the narrowed band gap and decreased work function, caused by the escaped lattice oxygen and the enriched coordination-unsaturated Co²⁺ in this atomic layer. Besides, the outstanding durability of the catalyst can result from the chemically epitaxial deposition of the Co₃O₄ on the cobalt surface. Therefore, the proposed synthetic strategy may offer a smart way to develop other atomic-level transition metals with high electrocatalytic activity and stability for energy conversion and storage devices.

"Cuju"-Structured Iron Diselenide-Derived Oxide: A Highly Efficient Electrocatalyst for Water Oxidation

Electrocatalysts with outstanding performance have been highly desired toward exploration of new energy storage and conversion devices/systems as well as making an efficient and eco-friendly utilization of green energy. In this study, we composed an iron-based binary diselenide-derived oxide (Fe-SDO) with a facile one-step hydrothermal method to utilize the earth-abundant iron and the probably prosperous catalytic performance of metal-selenides compounds. The catalyst exhibits an overpotential of 226 mV at a current density of 10 mA/cm², a Tafel slope of 41 mV dec^-1, and robust durability after catalyzing vigorous OER for 36 h constantly. Through several analytical methods conducted before and after the oxygen evolution reaction activation on FeSe₂ it was discovered that such catalyst possessed a morphology as "Cuju"-like balls with porosity inside in which we explored the vacancy defects and lattice distortion that play significant roles in generating the high electrocatalytic performance of our proposed catalyst by inducing remarkable electron conductivity in the porous Cuju balls (a Chinese traditional football). Throughout our work the superb electrocatalyst performance of the iron-based compounds was demonstrated, and subsequently the underlying reason for such electrocatalyst performance was addressed, which may push boundaries for the exploration of iron-based compounds as OER catalyst and large-scale commercial application of such compounds in the future.

Chain Vacancies in 2D Crystals

Defects in bulk crystals can be classified into vacancies, interstitials, grain boundaries, stacking faults, dislocations, and so forth. In particular, the vacancy in semiconductors is a primary defect that governs electrical transport. Concentration of vacancies depends mainly on the growth conditions. Individual vacancies instead of aggregated vacancies are usually energetically more favorable at room temperature because of the entropy contribution. This phenomenon is not guaranteed in van der Waals 2D materials due to the reduced dimensionality (reduced entropy). Here, it is reported that the 1D connected/aggregated vacancies are energetically stable at room temperature. Transmission electron microscopy observations demonstrate the preferential alignment direction of the vacancy chains varies in different 2D crystals: MoS₂ and WS₂ prefer 〈2¯11〉 direction, while MoTe₂ prefers 〈1¯10〉 direction. This difference is mainly caused by the different strain effect near the chalcogen vacancies. Black phosphorous also exhibits directional double-chain vacancies along 〈01〉 direction. Density functional theory calculations predict that the chain vacancies act as extended gap (conductive) states. The observation of the chain vacancies in 2D crystals directly explains the origin of n-type behavior in MoTe₂ devices in recent experiments and offers new opportunities for electronic structure engineering with various 2D materials.

Vacancy-Induced Semiconductor-Insulator-Metal Transitions in Nonstoichiometric Nickel and Tungsten Oxides

Metal-insulator transitions in strongly correlated oxides induced by electrochemical charging have been attributed to formation of vacancy defects. However, the role of native defects in affecting these transitions is not clear. Here, we report a new type of phase transition in p-type, nonstoichiometric nickel oxide involving a semiconductor-to-insulator-to-metal transition along with the complete reversal of conductivity from p- to n-type at room temperature induced by electrochemical charging in a Li⁺-containing electrolyte. Direct observation of vacancy-ion interactions using in situ near-infrared photoluminescence spectroscopy show that the transition is a result of passivation of native nickel (cationic) vacancy defects and subsequent formation of oxygen (anionic) vacancy defects driven by Li⁺ insertion into the lattice. Changes in the oxidation states of nickel due to defect interactions probed by X-ray photoemission spectroscopy support the above conclusions. In contrast, n-type, nonstoichiometric tungsten oxide shows only insulator-to-metal transition, which is a result of oxygen vacancy formation. The defect-property correlations shown here in these model systems can be extended to other oxides.

Evolution of Irradiation-Induced Vacancy Defects in Boron Nitride Nanotubes

Irradiation-induced vacancy defects in multiwalled (MW) boron nitride nanotubes (BNNTs) are investigated via in situ high-resolution transmission electron microscope operated at 80 kV, with a homogeneous distribution of electron beam intensity. During the irradiation triangle-shaped vacancy defects are gradually generated in MW BNNTs under a mediate electron current density (30 A cm(-2)), by knocking the B atoms out. The vacancy defects grow along a well-defined direction within a wall at the early stage as a result of the curvature induced lattice strain, and then develop wall by wall. The orientation or the growth direction of the vacancy defects can be used to identify the chirality of an individual wall. With increasing electron current density, the shape of the irradiation-induced vacancy defects changes from regular triangle to irregular polygon.

Tailoring graphene to achieve negative Poisson's ratio properties

Graphene can be made auxetic through the introduction of vacancy defects. This results in the thinnest negative Poisson's ratio material at ambient conditions known so far, an effect achieved via a nanoscale de-wrinkling mechanism that mimics the behavior at the macroscale exhibited by a crumpled sheet of paper when stretched.

Multiscale modeling and simulation of nanotube-based torsional oscillators

In this paper, we propose the first numerical study of nanotube-based torsional oscillators via developing a new multiscale model. The edge-to-edge technique was employed in this multiscale method to couple the molecular model, i.e., nanotubes, and the continuum model, i.e., the metal paddle. Without losing accuracy, the metal paddle was treated as the rigid body in the continuum model. Torsional oscillators containing (10,0) nanotubes were mainly studied. We considered various initial angles of twist to depict linear/nonlinear characteristics of torsional oscillators. Furthermore, effects of vacancy defects and temperature on mechanisms of nanotube-based torsional oscillators were discussed.