1
|
Zhao H, Ding L, Ren N, Yu X, Wang A, Zhao M. Multiferroic properties and giant piezoelectric effect of a 2D Janus WO 3F monolayer. Phys Chem Chem Phys 2024. [PMID: 39400279 DOI: 10.1039/d4cp02985b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/15/2024]
Abstract
Materials possessing both ferroelectricity and ferromagnetism are regarded as ideal candidates for electronic devices, such as nonvolatile memories. Based on first-principles calculations, we systematically studied the crystal structure, electronic structure as well as magnetic, piezoelectric and ferroelectric properties of a two-dimensional van der Waals WO3F monolayer material. The WO3F monolayer was found to possess a robust square crystal structure, exhibiting exceptional stability and mechanical resilience. Magnetic characterization revealed that the material displayed a ferromagnetic state with a magnetic moment of 1μB with negligible magnetic anisotropy. In terms of ferroelectric properties, the WO3F monolayer demonstrated pronounced in-plane polarization, which is in stark contrast to its relatively weak out-of-plane polarization and indicative of anisotropic polarization behavior. Additionally, the material's piezoelectric response could be modulated through strain engineering, with its piezoelectric coefficient (d11) at 4% tensile strain, which exceeds that of the vast majority of known 2D piezoelectric materials, thus underscoring its potential for versatile multifunctional applications in diverse fields, including sensing, energy harvesting, and actuator technologies.
Collapse
Affiliation(s)
- Hongbo Zhao
- Institute for Advanced Interdisciplinary Research (iAIR), School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong, 250022, China.
- Key Laboratory of Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Longhua Ding
- Institute for Advanced Interdisciplinary Research (iAIR), School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong, 250022, China.
| | - Na Ren
- Institute for Advanced Interdisciplinary Research (iAIR), School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong, 250022, China.
| | - Xin Yu
- Institute for Advanced Interdisciplinary Research (iAIR), School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong, 250022, China.
| | - Aizhu Wang
- Institute for Advanced Interdisciplinary Research (iAIR), School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong, 250022, China.
| | - Mingwen Zhao
- School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, 250100, China.
| |
Collapse
|
2
|
Ranjan P, Li Z, Ansari A, Ahmed S, Siddiqui MA, Zhang S, Patole SP, Cheng GJ, Sadki EHS, Vinu A, Kumar P. 2D Materials for Potable Water Application: Basic Nanoarchitectonics and Recent Progresses. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2407160. [PMID: 39390843 DOI: 10.1002/smll.202407160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2024] [Revised: 09/22/2024] [Indexed: 10/12/2024]
Abstract
Water polluted by toxic chemicals due to waste from chemical/pharmaceuticals and harmful microbes such as E. Coli bacteria causes several fatal diseases; and therefore, water filtration is crucial for accessing clean and safe water necessary for good health. Conventional water filtration technologies include activated carbon filters, reverse osmosis, and ultrafiltration. However, they face several challenges, including high energy consumption, fouling, limited selectivity, inefficiencies in removing certain contaminants, dimensional control of pores, and structural/chemical changes at higher thermal conditions and upon prolonged usage of water filter. Recently, the advent of 2D materials such as graphene, BN, MoS2, MXenes, and so on opens new avenues for advanced water filtration systems. This review delves into the nanoarchitectonics of 2D materials for water filtration applications. The current state of water filtration technologies is explored, the inherent challenges they face are outlines, and the unique properties and advantages of 2D materials are highlighted. Furthermore, the scope of this review is discussed, which encompasses the synthesis, characterization, and application of various 2D materials in water filtration, providing insights into future research directions and potential industrial applications.
Collapse
Affiliation(s)
- Pranay Ranjan
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Jodhpur, Jodhpur, Rajasthan, 342037, India
| | - Zhixuan Li
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), School of Engineering, The University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Arshiya Ansari
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Jodhpur, Jodhpur, Rajasthan, 342037, India
| | - Shahzad Ahmed
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Jodhpur, Jodhpur, Rajasthan, 342037, India
| | - Moin Ali Siddiqui
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Jodhpur, Jodhpur, Rajasthan, 342037, India
| | - Shizhuo Zhang
- The Institute of Technological Sciences, Wuhan University, Wuhan, 430072, P. R. China
| | - Shashikant P Patole
- Department of Physics, Khalifa University of Science and Technology, Abu Dhabi, 127788, UAE
| | - Gary J Cheng
- School of Industrial Engineering, Purdue University, West Lafayette, IN, 47906, USA
| | - El Hadi S Sadki
- Department of Physics, College of Science, United Arab Emirates University, Al-Ain, 15551, UAE
| | - Ajayan Vinu
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), School of Engineering, The University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| | - Prashant Kumar
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), School of Engineering, The University of Newcastle, University Drive, Callaghan, New South Wales, 2308, Australia
| |
Collapse
|
3
|
Wang K, Choyal S, Schultz JF, McKenzie J, Li L, Liu X, Jiang N. Borophene: Synthesis, Chemistry, and Electronic Properties. Chempluschem 2024; 89:e202400333. [PMID: 39031807 DOI: 10.1002/cplu.202400333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2024] [Revised: 06/18/2024] [Accepted: 06/19/2024] [Indexed: 07/22/2024]
Abstract
As a neighbor of carbon in the periodic table, boron exhibits versatile structural and electronic configurations, with its allotropes predicted to possess intriguing structures and properties. Since the experimental realization of two-dimensional (2D) boron sheets (borophene) on Ag(111) substrates in 2015, the experimental study of the realization and characteristics of borophene has drawn increasing interest. In this review, we summarize the synthesis and properties of borophene, which are mainly based on experimental results. First, the synthesis of borophene on different substrates, as well as borophane and bilayer borophene, featuring unique phases and properties, are discussed. Next, the chemistry of borophene, such as oxidation, hydrogenation, and its integration into heterostructures with other materials, is summarized. We also mention a few works focused on the physical properties of borophene, specifically its electronic properties. Lastly, the brief outlook addresses challenges toward practical applications of borophene and possible solutions.
Collapse
Affiliation(s)
- Kai Wang
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Shilpa Choyal
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Jeremy F Schultz
- Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - James McKenzie
- Department of Physics & Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
- Stavropoulos Center for Complex Quantum Matter, University of Notre Dame, Notre Dame, IN 46556, USA
| | - Linfei Li
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Xiaolong Liu
- Department of Physics & Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
- Stavropoulos Center for Complex Quantum Matter, University of Notre Dame, Notre Dame, IN 46556, USA
| | - Nan Jiang
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
- Department of Physics, University of Illinois Chicago, Chicago, IL 60607, USA
| |
Collapse
|
4
|
Massasa EH, Kortstee LTJ, Lifer R, Shaek S, Pokroy B, Castelli IE, Bekenstein Y. Colloidal Synthesis of (PbBr 2) 2(AMTP) 2PbBr 4 a Periodic Perovskite "Heterostructured" Nanocrystal. CRYSTAL GROWTH & DESIGN 2024; 24:3237-3245. [PMID: 38659663 PMCID: PMC11036359 DOI: 10.1021/acs.cgd.3c01472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/10/2023] [Revised: 03/09/2024] [Accepted: 03/13/2024] [Indexed: 04/26/2024]
Abstract
Heterostructures in nanoparticles challenge our common understanding of interfaces due to quantum confinement and size effects, giving rise to synergistic properties. An alternating heterostructure in which multiple and reoccurring interfaces appear in a single nanocrystal is hypothesized to accentuate such properties. We present a colloidal synthesis for perovskite layered heterostructure nanoparticles with a (PbBr2)2(AMTP)2PbBr4 composition. By varying the synthetic parameters, such as synthesis temperature, solvent, and selection of precursors, we control particle size, shape, and product priority. The structures are validated by X-ray and electron diffraction techniques. The heterostructure nanoparticles' main optical feature is a broad emission peak, showing the same range of wavelengths compared to the bulk sample.
Collapse
Affiliation(s)
- Emma H. Massasa
- Department
of Materials Science and Engineering, Technion—
Israel Institute of Technology, 32000 Haifa, Israel
| | - Lotte T. J. Kortstee
- Department
of Energy Conversion and Storage (DTU Energy), Technical University of Denmark, Anker Engelunds Vej 411, DK-2800 Kongens Lyngby, Denmark
| | - Rachel Lifer
- Department
of Materials Science and Engineering, Technion—
Israel Institute of Technology, 32000 Haifa, Israel
| | - Saar Shaek
- Department
of Materials Science and Engineering, Technion—
Israel Institute of Technology, 32000 Haifa, Israel
| | - Boaz Pokroy
- Department
of Materials Science and Engineering, Technion—
Israel Institute of Technology, 32000 Haifa, Israel
| | - Ivano E. Castelli
- Department
of Energy Conversion and Storage (DTU Energy), Technical University of Denmark, Anker Engelunds Vej 411, DK-2800 Kongens Lyngby, Denmark
| | - Yehonadav Bekenstein
- Department
of Materials Science and Engineering, Technion—
Israel Institute of Technology, 32000 Haifa, Israel
- The
Solid-State Institute, Technion—Israel
Institute of Technology, 32000 Haifa, Israel
| |
Collapse
|
5
|
Botella R, Cao W, Celis J, Fernández-Catalá J, Greco R, Lu L, Pankratova V, Temerov F. Activating two-dimensional semiconductors for photocatalysis: a cross-dimensional strategy. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:141501. [PMID: 38086082 DOI: 10.1088/1361-648x/ad14c8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 12/12/2023] [Indexed: 01/05/2024]
Abstract
The emerging two-dimensional (2D) semiconductors substantially extend materials bases for versatile applications such as semiconductor photocatalysis demanding semiconductive matrices and large surface areas. The dimensionality, while endowing 2D semiconductors the unique properties to host photocatalytic functionality of pollutant removal and hydrogen evolution, hurdles the activation paths to form heterogenous photocatalysts where the photochemical processes are normally superior over these on the mono-compositional counterparts. In this perspective, we present a cross-dimensional strategy to employ thenD (n= 0-2) clusters or nanomaterials as activation partners to boost the photocatalytic activities of the 2D semiconductors. The formation principles of heterogenous photocatalysts are illustrated specifically for the 2D matrices, followed by selection criteria of them among the vast 2D database. The computer investigations are illustrated in the density functional theory route and machine learning benefitted from the vast samples in the 2D library. Synthetic realizations and characterizations of the 2D heterogenous systems are introduced with an emphasis on chemical methods and advanced techniques to understand materials and mechanistic studies. The perspective outlooks cross-dimensional activation strategies of the 2D materials for other applications such as CO2removal, and materials matrices in other dimensions which may inspire incoming research within these fields.
Collapse
Affiliation(s)
- R Botella
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - W Cao
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - J Celis
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - J Fernández-Catalá
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - R Greco
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - L Lu
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - V Pankratova
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - F Temerov
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| |
Collapse
|
6
|
Gisbert VG, Garcia R. Fast and high-resolution mapping of van der Waals forces of 2D materials interfaces with bimodal AFM. NANOSCALE 2023; 15:19196-19202. [PMID: 37982209 DOI: 10.1039/d3nr05274e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/21/2023]
Abstract
High-spatial resolution mapping of van der Waals forces is relevant in several fields ranging from nanotechnology to colloidal science. The emergence of two-dimensional heterostructures assembled by van der Waals interactions has enhanced the interest of those measurements. Several AFM methods have been developed to measure the adhesion force between an AFM probe and the material of interest. However, a reliable and high-resolution method to measure the Hamaker constant remains elusive. We demonstrate that an atomic force microscope operated in a bimodal configuration enables fast, quantitative, and high-resolution mapping of the Hamaker constant of interfaces. The method is applied to map the Hamaker constant of monolayer, bilayer and multilayer MoS2 surfaces. Those interfaces are characterized with Hamaker constant and spatial resolutions of, respectively, 0.1 eV and 50 nm.
Collapse
Affiliation(s)
- Victor G Gisbert
- Instituto de Ciencia de Materiales de Madrid, CSIC, c/Sor Juana Ines de la Cruz 3, 28049 Madrid, Spain.
| | - Ricardo Garcia
- Instituto de Ciencia de Materiales de Madrid, CSIC, c/Sor Juana Ines de la Cruz 3, 28049 Madrid, Spain.
| |
Collapse
|
7
|
Sattigeri RM, Cuono G, Autieri C. Altermagnetic surface states: towards the observation and utilization of altermagnetism in thin films, interfaces and topological materials. NANOSCALE 2023; 15:16998-17005. [PMID: 37831060 DOI: 10.1039/d3nr03681b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
The altermagnetism influences the electronic states allowing the presence of non-relativistic spin-splittings. Since altermagnetic spin-splitting is present along specific k-paths of the 3D Brillouin zone, we expect that the altermagnetic surface stateswill be present on specific surface orientations. We unveil the properties of the altermagnetic surface states considering three representative materials belonging to the orthorhombic, hexagonal and tetragonal space groups. We calculate the 2D projected Brillouin zone from the 3D Brillouin zone. We study the surfaces with their respective 2D Brillouin zones establishing where the spin-splittings with opposite sign merge annihilating the altermagnetic properties and on which surfaces the altermagnetism is preserved. Looking at the three principal surface orientations, we find that for several cases two surfaces are blind to the altermagnetism, while the altermagnetism survives for one surface orientation. Which surface preserves the altermagnetism depends also on themagnetic order. We qualitatively show that an electric field orthogonal to the blind surface can activate the altermagnetism. Our projection method was proven for strong altermagnetism, but it will be equivalently valid for recently discovered weak altermagnetism. Our results predict which surfaces to cleave in order to preserve altermagnetism in surfaces or interfaces and this paves the way to observe non-relativistic altermagnetic spin-splitting in thin films via spin-resolved ARPES and to interface the altermagnetism with other collective modes. We open future perspectives for the study of altermagnetic effects on the trivial and topological surface states.
Collapse
Affiliation(s)
- Raghottam M Sattigeri
- International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland.
| | - Giuseppe Cuono
- International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland.
| | - Carmine Autieri
- International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland.
| |
Collapse
|
8
|
Cypher SM, Pauly M, Castro LG, Donley CL, Maggard PA, Goldberg KI. Ethanol Upgrading to n-Butanol Using Transition-Metal-Incorporated Poly(triazine)imide Frameworks. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37486020 DOI: 10.1021/acsami.3c07396] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/25/2023]
Abstract
The upgrading of ethanol to n-butanol was performed using a molecular catalyst integrated into a carbon nitride support, one of the first examples of a supported molecular catalyst performing the Guerbet process. Initial studies using crystalline poly(triazine)imide (PTI) with lithium or transition-metal cations imbedded in the support together with a base as the catalyst system did not produce any significant amounts of n-butanol. However, when using the catalyst material formed by treatment of PTI-LiCl with [(Cp*)IrCl2]2 (Cp* = pentamethylcyclopentadienyl) along with sodium hydroxide, a 59% selectivity for butanol (13% yield) was obtained at 145 °C. This PTI-(Cp*)Ir material exhibited distinct UV-vis absorption features and powder X-ray diffractions which differ from those of the parent PTI-LiCl and [(Cp*)IrCl2]2. The PTI-(Cp*)Ir material was found to have a metal loading of 27% iridium per empirical unit of the framework. Along with the formation of n-butanol from the Guerbet reaction, the presence of higher chain alcohols was also observed.
Collapse
Affiliation(s)
- Sabrine M Cypher
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Magnus Pauly
- Department of Chemistry, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Leslie G Castro
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Carrie L Donley
- Chapel Hill Analytical and Nanofabrication Laboratory, Department of Chemistry, University of North Carolina, Chapel Hill, North Carolina 27599, United States
| | - Paul A Maggard
- Department of Chemistry, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Karen I Goldberg
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| |
Collapse
|
9
|
Özcan S, Biel B. MXene-based Ti 2C/Ta 2C lateral heterostructure: an intrinsic room temperature ferromagnetic material with large magnetic anisotropy. RSC Adv 2023; 13:17222-17229. [PMID: 37304787 PMCID: PMC10248545 DOI: 10.1039/d3ra03343k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Accepted: 05/30/2023] [Indexed: 06/13/2023] Open
Abstract
Two-dimensional (2D) lateral heterostructures (LH) combining Ti2C and Ta2C MXenes were investigated by means of first-principles calculations. Our structural and elastic properties calculations show that the lateral Ti2C/Ta2C heterostructure results in a 2D material that is stronger than the original isolated MXenes and other 2D monolayers such as germanene or MoS2. The analysis of the evolution of the charge distribution with the size of the LH shows that, for small systems, it tends to distribute homogeneously between the two monolayers, whereas for larger systems electrons tend to accumulate in a region of ∼6 Å around the interface. The work function of the heterostructure, one crucial parameter in the design of electronic nanodevices, is found to be lower than that of some conventional 2D LH. Remarkably, all the heterostructures studied show a very high Curie temperature (between 696 K and 1082 K), high magnetic moments and high magnetic anisotropy energies. These features make (Ti2C)/(Ta2C) lateral heterostructures very suitable candidates for spintronic, photocatalysis, and data storage applications based upon 2D magnetic materials.
Collapse
Affiliation(s)
- S Özcan
- Department of Physics, Aksaray University 68100 Aksaray Turkey
| | - B Biel
- Department of Atomic, Molecular and Nuclear Physics, Instituto Carlos I de Física Teórica y Computacional, Faculty of Science, Campus de Fuente Nueva, University of Granada 18071 Granada Spain
| |
Collapse
|
10
|
Utama MIB, Zeng H, Sadhukhan T, Dasgupta A, Gavin SC, Ananth R, Lebedev D, Wang W, Chen JS, Watanabe K, Taniguchi T, Marks TJ, Ma X, Weiss EA, Schatz GC, Stern NP, Hersam MC. Chemomechanical modification of quantum emission in monolayer WSe 2. Nat Commun 2023; 14:2193. [PMID: 37069140 PMCID: PMC10110606 DOI: 10.1038/s41467-023-37892-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2023] [Accepted: 04/04/2023] [Indexed: 04/19/2023] Open
Abstract
Two-dimensional (2D) materials have attracted attention for quantum information science due to their ability to host single-photon emitters (SPEs). Although the properties of atomically thin materials are highly sensitive to surface modification, chemical functionalization remains unexplored in the design and control of 2D material SPEs. Here, we report a chemomechanical approach to modify SPEs in monolayer WSe2 through the synergistic combination of localized mechanical strain and noncovalent surface functionalization with aryl diazonium chemistry. Following the deposition of an aryl oligomer adlayer, the spectrally complex defect-related emission of strained monolayer WSe2 is simplified into spectrally isolated SPEs with high single-photon purity. Density functional theory calculations reveal energetic alignment between WSe2 defect states and adsorbed aryl oligomer energy levels, thus providing insight into the observed chemomechanically modified quantum emission. By revealing conditions under which chemical functionalization tunes SPEs, this work broadens the parameter space for controlling quantum emission in 2D materials.
Collapse
Affiliation(s)
- M Iqbal Bakti Utama
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Hongfei Zeng
- Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208, USA
| | - Tumpa Sadhukhan
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
| | - Anushka Dasgupta
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - S Carin Gavin
- Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208, USA
| | - Riddhi Ananth
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Dmitry Lebedev
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Wei Wang
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Jia-Shiang Chen
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, 60439, USA
- Northwestern-Argonne Institute of Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Tobin J Marks
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Xuedan Ma
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, 60439, USA
- Northwestern-Argonne Institute of Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Emily A Weiss
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - George C Schatz
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA.
| | - Nathaniel P Stern
- Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208, USA.
| | - Mark C Hersam
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA.
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA.
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA.
| |
Collapse
|
11
|
Wang Z, Tripathi M, Golsanamlou Z, Kumari P, Lovarelli G, Mazziotti F, Logoteta D, Fiori G, Sementa L, Marega GM, Ji HG, Zhao Y, Radenovic A, Iannaccone G, Fortunelli A, Kis A. Substitutional p-Type Doping in NbS 2 -MoS 2 Lateral Heterostructures Grown by MOCVD. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209371. [PMID: 36644893 DOI: 10.1002/adma.202209371] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Revised: 12/30/2022] [Indexed: 06/17/2023]
Abstract
Monolayer MoS2 has attracted significant attention owing to its excellent performance as an n-type semiconductor from the transition metal dichalcogenide (TMDC) family. It is however strongly desired to develop controllable synthesis methods for 2D p-type MoS2 , which is crucial for complementary logic applications but remains difficult. In this work, high-quality NbS2 -MoS2 lateral heterostructures are synthesized by one-step metal-organic chemical vapor deposition (MOCVD) together with monolayer MoS2 substitutionally doped by Nb, resulting in a p-type doped behavior. The heterojunction shows a p-type transfer characteristic with a high on/off current ratio of ≈104 , exceeding previously reported values. The band structure through the NbS2 -MoS2 heterojunction is investigated by density functional theory (DFT) and quantum transport simulations. This work provides a scalable approach to synthesize substitutionally doped TMDC materials and provides an insight into the interface between 2D metals and semiconductors in lateral heterostructures, which is imperative for the development of next-generation nanoelectronics and highly integrated devices.
Collapse
Affiliation(s)
- Zhenyu Wang
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Mukesh Tripathi
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Zahra Golsanamlou
- CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy
| | - Poonam Kumari
- CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy
| | - Giuseppe Lovarelli
- Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy
- Department of Physics "E. Fermi", Università di Pisa, Pisa, I-56127, Italy
| | - Fabrizio Mazziotti
- Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy
| | - Demetrio Logoteta
- Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy
| | - Gianluca Fiori
- Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy
| | - Luca Sementa
- CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy
| | - Guilherme Migliato Marega
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Hyun Goo Ji
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Yanfei Zhao
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Aleksandra Radenovic
- Institute of Bioengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Giuseppe Iannaccone
- Department of Information Engineering, Università di Pisa, Pisa, I-56122, Italy
| | - Alessandro Fortunelli
- CNR-ICCOM and IPCF, Consiglio Nazionale delle Ricerche, via G. Moruzzi 1, Pisa, I-56124, Italy
| | - Andras Kis
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| |
Collapse
|
12
|
Dai YX, Li YX, Zhang XJ, Cosnier S, Shan D. Tuning Dimensionality of Benzimidazole Aggregates by Using Tetraoctylammonium Bromide: Enhanced Electrochemiluminescence Studies. ACS APPLIED MATERIALS & INTERFACES 2023; 15:6228-6233. [PMID: 36655778 DOI: 10.1021/acsami.2c22393] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Exploring the depolymerization strategy of liposoluble luminophores in the aqueous phase is vital for the development of electrochemiluminescence (ECL). In this work, tetraoctylammonium bromide (TOAB) with four long hydrophobic chains and short hydrophilic ends is used as a template to limit the aggregation of benzimidazole (BIM). By adjusting the loading of BIM on the hydrophobic chains of TOAB, a two-dimensional lamellar BIM/TOAB is formed, the ECL intensity of which is 6.4 times higher than that of the aggregated BIM (H2O2 as the coreactant). In terms of ECL spectroscopies, cyclic voltammetry , ECL transients, and the adjustment of the scanning potential range, the ECL mechanism is thoroughly studied. This work provides a new way to depolymerize organic luminophores and reveals a possible pathway in the annihilation ECL mechanism.
Collapse
Affiliation(s)
- Yu-Xuan Dai
- School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing210094, China
| | - Yi-Xuan Li
- School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing210094, China
| | - Xue-Ji Zhang
- School of Biomedical Engineering, Health Science Centre, Shenzhen University, Shenzhen518060, China
| | - Serge Cosnier
- University of Grenoble Alpes-CNRS, DCM UMR 5250, GrenobleF-38000, France
| | - Dan Shan
- School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing210094, China
| |
Collapse
|
13
|
Yu H, Dai M, Zhang J, Chen W, Jin Q, Wang S, He Z. Interface Engineering in 2D/2D Heterogeneous Photocatalysts. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205767. [PMID: 36478659 DOI: 10.1002/smll.202205767] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Revised: 11/06/2022] [Indexed: 06/17/2023]
Abstract
Assembling different 2D nanomaterials into heterostructures with strong interfacial interactions presents a promising approach for novel artificial photocatalytic materials. Chemically implementing the 2D nanomaterials' construction/stacking modes to regulate different interfaces can extend their functionalities and achieve good performance. Herein, based on different fundamental principles and photochemical processes, multiple construction modes (e.g., face-to-face, edge-to-face, interface-to-face, edge-to-edge) are overviewed systematically with emphasis on the relationships between their interfacial characteristics (e.g., point, linear, planar), synthetic strategies (e.g., in situ growth, ex situ assembly), and enhanced applications to achieve precise regulation. Meanwhile, recent efforts for enhancing photocatalytic performances of 2D/2D heterostructures are summarized from the critical factors of enhancing visible light absorption, accelerating charge transfer/separation, and introducing novel active sites. Notably, the crucial roles of surface defects, cocatalysts, and surface modification for photocatalytic performance optimization of 2D/2D heterostructures are also discussed based on the synergistic effect of optimization engineering and heterogeneous interfaces. Finally, perspectives and challenges are proposed to emphasize future opportunities for expanding 2D/2D heterostructures for photocatalysis.
Collapse
Affiliation(s)
- Huijun Yu
- Shandong Key Laboratory of Water Pollution Control and Resource Reuse, School of Environmental Science and Engineering, Shandong University, Qingdao, 266237, China
| | - Meng Dai
- Shandong Key Laboratory of Water Pollution Control and Resource Reuse, School of Environmental Science and Engineering, Shandong University, Qingdao, 266237, China
| | - Jing Zhang
- Shandong Key Laboratory of Water Pollution Control and Resource Reuse, School of Environmental Science and Engineering, Shandong University, Qingdao, 266237, China
| | - Wenhan Chen
- Shandong Key Laboratory of Water Pollution Control and Resource Reuse, School of Environmental Science and Engineering, Shandong University, Qingdao, 266237, China
| | - Qiu Jin
- Shandong Key Laboratory of Water Pollution Control and Resource Reuse, School of Environmental Science and Engineering, Shandong University, Qingdao, 266237, China
| | - Shuguang Wang
- Shandong Key Laboratory of Water Pollution Control and Resource Reuse, School of Environmental Science and Engineering, Shandong University, Qingdao, 266237, China
| | - Zuoli He
- Shandong Key Laboratory of Water Pollution Control and Resource Reuse, School of Environmental Science and Engineering, Shandong University, Qingdao, 266237, China
| |
Collapse
|
14
|
Garcia R. Interfacial Liquid Water on Graphite, Graphene, and 2D Materials. ACS NANO 2023; 17:51-69. [PMID: 36507725 PMCID: PMC10664075 DOI: 10.1021/acsnano.2c10215] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2022] [Accepted: 12/08/2022] [Indexed: 06/17/2023]
Abstract
The optical, electronic, and mechanical properties of graphite, few-layer, and two-dimensional (2D) materials have prompted a considerable number of applications. Biosensing, energy storage, and water desalination illustrate applications that require a molecular-scale understanding of the interfacial water structure on 2D materials. This review introduces the most recent experimental and theoretical advances on the structure of interfacial liquid water on graphite-like and 2D materials surfaces. On pristine conditions, atomic-scale resolution experiments revealed the existence of 1-3 hydration layers. Those layers were separated by ∼0.3 nm. The experimental data were supported by molecular dynamics simulations. However, under standard working conditions, atomic-scale resolution experiments revealed the presence of 2-3 hydrocarbon layers. Those layers were separated by ∼0.5 nm. Linear alkanes were the dominant molecular specie within the hydrocarbon layers. Paradoxically, the interface of an aged 2D material surface immersed in water does not have water molecules on its vicinity. Free-energy considerations favored the replacement of water by alkanes.
Collapse
Affiliation(s)
- Ricardo Garcia
- Instituto de Ciencia de Materiales
de Madrid, CSIC, c/Sor Juana Inés de la Cruz 3, 28049Madrid, Spain
| |
Collapse
|
15
|
One-pot controllable epitaxial growth of Pd-based heterostructures for enhanced formic acid oxidation. Colloids Surf A Physicochem Eng Asp 2023. [DOI: 10.1016/j.colsurfa.2022.130358] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
|
16
|
Liu C, Zhang H, Zhang S, Hou D, Liu Y, Wu H, Jiang Z, Wang H, Ma Z, Luo X, Li X, Sun Y, Xu X, Zhang Z, Sheng Z. Emergent, Non-Aging, Extendable, and Rechargeable Exchange Bias in 2D Fe 3 GeTe 2 Homostructures Induced by Moderate Pressuring. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203411. [PMID: 36300686 DOI: 10.1002/adma.202203411] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 10/13/2022] [Indexed: 06/16/2023]
Abstract
As a crucial concept in magnetism and spintronics, exchange bias (ExB) measures the asymmetry in the hysteresis loop of a pinned ferromagnet (FM)/antiferromagnet (AFM) interface. Previous studies are mainly focused on FM/AFM heterostructures composed of conventional bulk materials, whose complex interfaces prohibit precise control and full understanding of the phenomenon. Here, the enabling power of 2D magnets is exploited to demonstrate the emergence, non-aging, extendability, and rechargeability of ExB in van der Waals Fe3 GeTe2 homostructures, upon moderate pressuring. The emergence of the ExB is attributed to a local stress-induced FM-to-AFM transition, as validated using first-principles calculations, and confirmed in magneto-optical Kerr effect and second harmonic generation measurements. It is also observed that, negligible ExB aging before the training effect suddenly takes place through avalanching, pronounced delay of the avalanche via timed pressure repetition (extendability), ExB recovery in the post-training sample upon refreshed pressuring (rechargeability), and demonstrate its versatile tunability. These striking findings offer unprecedented insights into the underlying principles of ExB and its training, with immense technological applications in sight.
Collapse
Affiliation(s)
- Caixing Liu
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- The International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Huisheng Zhang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of the Ministry of Education, Research Institute of Materials Science, Shanxi Normal University, Taiyuan, 030000, P. R. China
| | - Shunhong Zhang
- The International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, P. R. China
| | - De Hou
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Yonglai Liu
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Hanqing Wu
- The International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zhongzhu Jiang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - HuaiXiang Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Zongwei Ma
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Xuan Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Xiaoyin Li
- The International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Yuping Sun
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of the Ministry of Education, Research Institute of Materials Science, Shanxi Normal University, Taiyuan, 030000, P. R. China
| | - Zhenyu Zhang
- The International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zhigao Sheng
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Key Laboratory of Photovoltaic Materials and Energy Conservation, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| |
Collapse
|
17
|
Abstract
The two natural allotropes of carbon, diamond and graphite, are extended networks of sp3-hybridized and sp2-hybridized atoms, respectively1. By mixing different hybridizations and geometries of carbon, one could conceptually construct countless synthetic allotropes. Here we introduce graphullerene, a two-dimensional crystalline polymer of C60 that bridges the gulf between molecular and extended carbon materials. Its constituent fullerene subunits arrange hexagonally in a covalently interconnected molecular sheet. We report charge-neutral, purely carbon-based macroscopic crystals that are large enough to be mechanically exfoliated to produce molecularly thin flakes with clean interfaces-a critical requirement for the creation of heterostructures and optoelectronic devices2. The synthesis entails growing single crystals of layered polymeric (Mg4C60)∞ by chemical vapour transport and subsequently removing the magnesium with dilute acid. We explore the thermal conductivity of this material and find it to be much higher than that of molecular C60, which is a consequence of the in-plane covalent bonding. Furthermore, imaging few-layer graphullerene flakes using transmission electron microscopy and near-field nano-photoluminescence spectroscopy reveals the existence of moiré-like superlattices3. More broadly, the synthesis of extended carbon structures by polymerization of molecular precursors charts a clear path to the systematic design of materials for the construction of two-dimensional heterostructures with tunable optoelectronic properties.
Collapse
|
18
|
Le Thi HY, Ngo TD, Phan NAN, Yoo WJ, Watanabe K, Taniguchi T, Aoki N, Bird JP, Kim GH. Self-Forming p-n Junction Diode Realized with WSe 2 Surface and Edge Dual Contacts. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204547. [PMID: 36216594 DOI: 10.1002/smll.202204547] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2022] [Revised: 09/08/2022] [Indexed: 06/16/2023]
Abstract
Owing to their practical applications, two-dimensional semiconductor p-n diodes have attracted enormous attention. Over the past decade, various methods, such as chemical doping, heterojunction structures, and metallization using metals with different work functions, have been reported for fabrication of such devices. In this study, a lateral p-n junction diode is formed in tungsten diselenide (WSe2 ) using a combination of edge and surface contacts. The appearance of amorphous tungsten oxide at etched WSe2 , and the formation of a junction near the edge contact, are verified by high-resolution transmission electron microscopy. The device demonstrates high on/off ratio for both the edge and surface contacts, with respective values of 107 and 108 . The diode can achieve extremely high mobility of up to 168 cm2 V-1 s-1 and a rectification ratio of 103 . The ideality factor is 1.11 at a back gate voltage VG = 60 V at 300 K. The devices with encapsulation of hexagonal boron nitride exhibit good stability to atmospheric exposure, over a measured period of 2 months. In addition, the architecture of the contacts, which is based on a single-channel device, should be advantageous for the implementation of more complicated applications such as inverters, photodetectors, and light-emitting diodes.
Collapse
Affiliation(s)
- Hai Yen Le Thi
- Samsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Tien Dat Ngo
- Samsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Nhat Anh Nguyen Phan
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Won Jong Yoo
- Samsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Material Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Nobuyuki Aoki
- Department of Materials Science, Chiba University, Chiba, 263-8522, Japan
| | - Jonathan P Bird
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260, USA
| | - Gil-Ho Kim
- Samsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| |
Collapse
|
19
|
Dimitropoulos M, Trakakis G, Androulidakis C, Kotsidi M, Galiotis C. Wrinkle-mediated CVD synthesis of wafer scale Graphene/h-BN heterostructures. NANOTECHNOLOGY 2022; 34:025601. [PMID: 36215949 DOI: 10.1088/1361-6528/ac98d0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2022] [Accepted: 10/10/2022] [Indexed: 06/16/2023]
Abstract
The combination of two-dimensional materials (2D) into heterostructures enables their integration in tunable ultrathin devices. For applications in electronics and optoelectronics, direct growth of wafer-scale and vertically stacked graphene/hexagonal boron nitride (h-BN) heterostructures is vital. The fundamental problem, however, is the catalytically inert nature of h-BN substrates, which typically provide a low rate of carbon precursor breakdown and consequently a poor rate of graphene synthesis. Furthermore, out-of-plane deformations such as wrinkles are commonly seen in 2D materials grown by chemical vapor deposition (CVD). Herein, a wrinkle-facilitated route is developed for the fast growth of graphene/h-BN vertical heterostructures on Cu foils. The key advantage of this synthetic pathway is the exploitation of the increased reactivity from inevitable line defects arising from the CVD process, which can act as active sites for graphene nucleation. The resulted heterostructures are found to exhibit superlubric properties with increased bending stiffness, as well as directional electronic properties, as revealed from atomic force microscopy measurements. This work offers a brand-new route for the fast growth of Gr/h-BN heterostructures with practical scalability, thus propelling applications in electronics and nanomechanical systems.
Collapse
Affiliation(s)
- Marinos Dimitropoulos
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - George Trakakis
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Charalampos Androulidakis
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Maria Kotsidi
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Costas Galiotis
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| |
Collapse
|
20
|
Li W, Wang C, Lu X. Conducting polymers-derived fascinating electrocatalysts for advanced hydrogen and oxygen electrocatalysis. Coord Chem Rev 2022. [DOI: 10.1016/j.ccr.2022.214555] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
|
21
|
Li B, Wang J, Wu Q, Tian Q, Li P, Zhang L, Yin LJ, Tian Y, Johnny Wong PK, Qin Z, Zhang L. Nanopore-Patterned CuSe Drives the Realization of the PbSe-CuSe Lateral Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2022; 14:32738-32746. [PMID: 35802412 DOI: 10.1021/acsami.2c08397] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Monolayer PbSe has been predicted to be a two-dimensional (2D) topological crystalline insulator (TCI) with crystalline symmetry-protected Dirac-cone-like edge states. Recently, few-layered epitaxial PbSe has been grown on the SrTiO3 substrate successfully, but the corresponding signature of the TCI was only observed for films not thinner than seven monolayers, largely due to interfacial strain. Here, we demonstrate a two-step method based on molecular beam epitaxy for the growth of the PbSe-CuSe lateral heterostructure on the Cu(111) substrate, in which we observe a nanopore-patterned CuSe layer that acts as the template for lateral epitaxial growth of PbSe. This further results in a PbSe-CuSe lateral heterostructure with an atomically sharp interface. Scanning tunneling microscopy and spectroscopy measurements reveal a fourfold symmetric square lattice of such PbSe with a quasi-particle band gap of 1.8 eV, a value highly comparable with the theoretical value of freestanding PbSe. The weak monolayer-substrate interaction is further supported by both density functional theory (DFT) and projected crystal orbital Hamilton population, with the former predicting the monolayer's anti-bond state to reside below the Fermi level. Our work demonstrates a practical strategy to fabricate a high-quality in-plane heterostructure, involving a monolayer TCI, which is viable for further exploration of the topology-derived quantum physics and phenomena in the monolayer limit.
Collapse
Affiliation(s)
- Bo Li
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Jing Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Qilong Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Qiwei Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Ping Li
- State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum Systems, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Ping Kwan Johnny Wong
- School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
- Shaanxi & NPU Chongqing Technology Innovation Center, Chongqing 400000, People's Republic of China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| |
Collapse
|
22
|
Pam ME, Li S, Su T, Chien YC, Li Y, Ang YS, Ang KW. Interface-Modulated Resistive Switching in Mo-Irradiated ReS 2 for Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202722. [PMID: 35610176 DOI: 10.1002/adma.202202722] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Revised: 04/30/2022] [Indexed: 06/15/2023]
Abstract
Coupling charge impurity scattering effects and charge-carrier modulation by doping can offer intriguing opportunities for atomic-level control of resistive switching (RS). Nonetheless, such effects have remained unexplored for memristive applications based on 2D materials. Here a facile approach is reported to transform an RS-inactive rhenium disulfide (ReS2 ) into an effective switching material through interfacial modulation induced by molybdenum-irradiation (Mo-i) doping. Using ReS2 as a model system, this study unveils a unique RS mechanism based on the formation/dissolution of metallic β-ReO2 filament across the defective ReS2 interface during the set/reset process. Through simple interfacial modulation, ReS2 of various thicknesses are switchable by modulating the Mo-irradiation period. Besides, the Mo-irradiated ReS2 (Mo-ReS2 ) memristor further exhibits a bipolar non-volatile switching ratio of nearly two orders of magnitude, programmable multilevel resistance states, and long-term synaptic plasticity. Additionally, the fabricated device can achieve a high MNIST learning accuracy of 91% under a non-identical pulse train. The study's findings demonstrate the potential for modulating RS in RS-inactive 2D materials via the unique doping-induced charged impurity scattering property.
Collapse
Affiliation(s)
- Mei Er Pam
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Tong Su
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore, 487372, Singapore
| | - Yu-Chieh Chien
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yesheng Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yee Sin Ang
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore, 487372, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis, Singapore, 138634, Singapore
| |
Collapse
|
23
|
Hu X, Liu K, Cai Y, Zang SQ, Zhai T. 2D Oxides for Electronics and Optoelectronics. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202200008] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022] Open
Affiliation(s)
- Xiaozong Hu
- Henan Key Laboratory of Crystalline Molecular Functional Materials Henan International Joint Laboratory of Tumor Theranostical Cluster Materials Green Catalysis Center, and College of Chemistry Zhengzhou University Zhengzhou 450001 P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die and Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan 430074 P. R. China
| | - Yongqing Cai
- Joint Key Laboratory of the Ministry of Education Institute of Applied Physics and Materials Engineering University of Macau Taipa 999078 Macau P. R. China
| | - Shuang-Quan Zang
- Henan Key Laboratory of Crystalline Molecular Functional Materials Henan International Joint Laboratory of Tumor Theranostical Cluster Materials Green Catalysis Center, and College of Chemistry Zhengzhou University Zhengzhou 450001 P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan 430074 P. R. China
| |
Collapse
|
24
|
Lee D, Choi Y, Kim J, Kim J. Recessed-Channel WSe 2 Field-Effect Transistor via Self-Terminated Doping and Layer-by-Layer Etching. ACS NANO 2022; 16:8484-8492. [PMID: 35575475 DOI: 10.1021/acsnano.2c03402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Effective channel control with low contact resistance can be accomplished through selective ion implantation in Si and III-V semiconductor technologies; however, this approach cannot be adopted for ultrathin van der Waals materials. Herein, we demonstrate a self-aligned fabrication process based on self-terminated p-doping and layer-by-layer chemical etching to achieve low contact resistance as well as a high on/off current ratio in ultrathin tungsten diselenide (WSe2) field-effect transistors (FETs). Damage-free layer-by-layer thinning of the WSe2 channel is repeated up to a thickness of approximately 1.4 nm, while maintaining the selectively p-doped source/drain regions. The device characteristics of the recessed-channel WSe2 FET are systematically monitored during this layer-by-layer recess-channel process. The WSe2 etching rate is estimated to be 2-3 layers per cycle of oxidation and subsequent chemical etching. The self-terminated tungsten oxide (WOX) layer grown through ultraviolet-ozone treatment induces robust p-doping in the neighboring (or underlying) WSe2 through the electron withdrawal mechanism, which remains in the source/drain regions after channel oxide removal. The adopted self-terminated and self-aligned recess-channel process for ultrathin WSe2 FETs enables the realization of a high on/off output current ratio (>108) and field-effect mobility (∼190 cm2/V·s), while maintaining low contact resistance (0.9-6.1 kΩ·μm) without a postannealing process. The proposed facile and reproducible doping and atomic-layer-etching method for the fabrication of a recessed-channel FET with an ultrathin body can be helpful for high-performance two-dimensional semiconductor devices and is applicable to post-Si complementary metal-oxide semiconductor devices.
Collapse
Affiliation(s)
- Dongryul Lee
- School of Chemical and Biological Engineering, Korea University, Seoul 02841, South Korea
| | - Yongha Choi
- School of Chemical and Biological Engineering, Korea University, Seoul 02841, South Korea
| | - Junghun Kim
- School of Chemical and Biological Engineering, Korea University, Seoul 02841, South Korea
| | - Jihyun Kim
- School of Chemical and Biological Engineering, Seoul National University, Seoul 08826, South Korea
| |
Collapse
|
25
|
Khan H, Ashraf MU, Idrees M, Din HU, Nguyen CV, Amin B. Intriguing interfacial characteristics of the CS contact with MX 2 (M = Mo, W; X = S, Se, Te) and MXY ((X ≠ Y) = S, Se, Te) monolayers. RSC Adv 2022; 12:12292-12302. [PMID: 35480342 PMCID: PMC9036409 DOI: 10.1039/d2ra00668e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2022] [Accepted: 04/08/2022] [Indexed: 11/27/2022] Open
Abstract
Using (hybrid) first principles calculations, the electronic band structure, type of Schottky contact and Schottky barrier height established at the interface of the most stable stacking patterns of the CS-MX2 (M = Mo, W; X = S, Se, Te) and CS-MXY ((X ≠ Y) = S, Se, Te) MS vdWH are investigated. The electronic band structures of CS-MX2 and CS-MXY MS vdWH seem to be simple sum of CS, MX2 and MXY monolayers. The projected electronic properties of the CS, MX2 and MXY layers are well preserved in CS-MX2 and CS-MXY MS vdWH. Their smaller effective mass (higher carrier mobility) render promising prospects of CS-WS2 and CS-MoSeTe as compared to other MS vdWH in nanoelectronic and optoelectronic devices, such as a high efficiency solar cell. In addition, we found that the effective mass of holes is higher than that of electrons, suggesting that these heterostructures can be utilized for hole/electron separation. Interestingly, the MS contact led to the formation of a Schottky contact or ohmic contact, therefore we have used the Schottky Mott rule to calculate the Schottky barrier height (SBH) of CS-MX2 (M = Mo, W; X = S, Se, Te) and CS-MXY ((X ≠ Y) = S, Se, Te) MS vdWH. It was found that CS-MX2 (M = Mo, W; X = S, Se, Te) and CS-MXY ((X ≠ Y) = S, Se, Te) (in both model-I and -II) MS vdWH form p-type Schottky contacts. These p-type Schottky contacts can be considered a promising building block for high-performance photoresponsive optoelectronic devices, p-type electronics, CS-based contacts, and for high-performance electronic devices.
Collapse
Affiliation(s)
- H Khan
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
| | - M U Ashraf
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
| | - M Idrees
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
| | - H U Din
- Department of Physics, Bacha Khan University Charsadda 24420 Pakistan
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University Hanoi 100000 Vietnam
| | - B Amin
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
| |
Collapse
|
26
|
Yadav S, Sadique MA, Kaushik A, Ranjan P, Khan R, Srivastava AK. Borophene as an emerging 2D flatland for biomedical applications: current challenges and future prospects. J Mater Chem B 2022; 10:1146-1175. [PMID: 35107476 DOI: 10.1039/d1tb02277f] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Recently, two-dimensional (2D)-borophene has emerged as a remarkable translational nanomaterial substituting its predecessors in the field of biomedical sensors, diagnostic tools, high-performance healthcare devices, super-capacitors, and energy storage devices. Borophene justifies its demand due to high-performance and controlled optical, electrical, mechanical, thermal, and magnetic properties as compared with other 2D-nanomaterials. However, continuous efforts are being made to translate theoretical and experimental knowledge into pragmatic platforms. To cover the associated knowledge gap, this review explores the computational and experimental chemistry needed to optimize borophene with desired properties. High electrical conductivity due to destabilization of the highest occupied molecular orbital (HOMO), nano-engineering at the monolayer level, chemistry-oriented biocompatibility, and photo-induced features project borophene for biosensing, bioimaging, cancer treatment, and theragnostic applications. Besides, the polymorphs of borophene have been useful to develop specific bonding for DNA sequencing and high-performance medical equipment. In this review, an overall critical and careful discussion of systematic advancements in borophene-based futuristic biomedical applications including artificial intelligence (AI), Internet-of-Things (IoT), and Internet-of-Medical Things (IoMT) assisted smart devices in healthcare to develop high-performance biomedical systems along with challenges and prospects is extensively addressed. Consequently, this review will serve as a key supportive platform as it explores borophene for next-generation biomedical applications. Finally, we have proposed the potential use of borophene in healthcare management strategies.
Collapse
Affiliation(s)
- Shalu Yadav
- CSIR - Advanced Materials and Processes Research Institute (AMPRI), Hoshangabad Road, Bhopal - 462026, India. .,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Mohd Abubakar Sadique
- CSIR - Advanced Materials and Processes Research Institute (AMPRI), Hoshangabad Road, Bhopal - 462026, India.
| | - Ajeet Kaushik
- NanoBioTech Laboratory, Health Systems Engineering, Department of Environmental Engineering, Florida Polytechnic University, Lakeland, Florida 33805, USA
| | - Pushpesh Ranjan
- CSIR - Advanced Materials and Processes Research Institute (AMPRI), Hoshangabad Road, Bhopal - 462026, India. .,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Raju Khan
- CSIR - Advanced Materials and Processes Research Institute (AMPRI), Hoshangabad Road, Bhopal - 462026, India. .,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Avanish K Srivastava
- CSIR - Advanced Materials and Processes Research Institute (AMPRI), Hoshangabad Road, Bhopal - 462026, India. .,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| |
Collapse
|
27
|
Lien-Medrano CR, Bonafé FP, Yam CY, Palma CA, Sánchez CG, Frauenheim T. Fano Resonance and Incoherent Interlayer Excitons in Molecular van der Waals Heterostructures. NANO LETTERS 2022; 22:911-917. [PMID: 35040646 DOI: 10.1021/acs.nanolett.1c03441] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Complex van der Waals heterostructures from layered molecular stacks are promising optoelectronic materials offering the means to efficient, modular charge separation and collection layers. The effect of stacking in the electrodynamics of such hybrid organic-inorganic two-dimensional materials remains largely unexplored, whereby molecular scale engineering could lead to advanced optical phenomena. For instance, tunable Fano engineering could make possible on-demand transparent conducting layers or photoactive elements, and passive cooling. We employ an adapted Gersten-Nitzan model and real time time-dependent density functional tight-binding to study the optoelectronics of self-assembled monolayers on graphene nanoribbons. We find Fano resonances that cause electromagnetic induced opacity and transparency and reveal an additional incoherent process leading to interlayer exciton formation with a characteristic charge transfer rate. These results showcase hybrid van der Waals heterostructures as paradigmatic 2D optoelectronic stacks, featuring tunable Fano optics and unconventional charge transfer channels.
Collapse
Affiliation(s)
- Carlos R Lien-Medrano
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 28359, Germany
| | - Franco P Bonafé
- Max Planck Institute for the Structure and Dynamics of Matter, Hamburg 22761, Germany
| | - Chi Yung Yam
- Shenzen JL Computational Science and Applied Research Institute (CSAR), Shenzhen 518110, P. R. China
| | - Carlos-Andres Palma
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P.R. China
- Department of Physics & IRIS Adlershof, Humboldt-Universität zur Berlin, Berlin 12489, Germany
| | - Cristián G Sánchez
- Instituto Interdisciplinario de Ciencias Básicas, Universidad Nacional de Cuyo, Mendoza M5502JMA, Argentina
| | - Thomas Frauenheim
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 28359, Germany
- Shenzen JL Computational Science and Applied Research Institute (CSAR), Shenzhen 518110, P. R. China
- Beijing Computational Science Research Center, 100193 Beijing, P. R. China
| |
Collapse
|
28
|
Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 111] [Impact Index Per Article: 55.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
Collapse
Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
| |
Collapse
|
29
|
Bartholomew AK, Meirzadeh E, Stone IB, Koay CS, Nuckolls C, Steigerwald ML, Crowther AC, Roy X. Superatom Regiochemistry Dictates the Assembly and Surface Reactivity of a Two-Dimensional Material. J Am Chem Soc 2022; 144:1119-1124. [PMID: 35020382 DOI: 10.1021/jacs.1c12072] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
The area of two-dimensional (2D) materials research would benefit greatly from the development of synthetically tunable van der Waals (vdW) materials. While the bottom-up synthesis of 2D frameworks from nanoscale building blocks holds great promise in this quest, there are many remaining hurdles, including the design of building blocks that reliably produce 2D lattices and the growth of macroscopic crystals that can be exfoliated to produce 2D materials. Here we report the regioselective synthesis of the cluster [trans-Co6Se8(CN)4(CO)2]3-/4-, a "superatomic" building block designed to polymerize and assemble into a 2D cyanometalate lattice whose surfaces are chemically addressable. The resulting vdW material, [Co(py)4]2[trans-Co6Se8(CN)4(CO)2], grows as bulk single crystals that can be mechanically exfoliated to produce flakes as thin as bilayers, with photolabile CO ligands on the exfoliated surface. As a proof of concept, we show that these surface CO ligands can be replaced by 4-isocyanoazobenzene under blue light irradiation. This work demonstrates that the bottom-up assembly of layered vdW materials from superatoms is a promising and versatile approach to create 2D materials with tunable physical and chemical properties.
Collapse
Affiliation(s)
| | - Elena Meirzadeh
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Ilana B Stone
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Christie S Koay
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Colin Nuckolls
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Michael L Steigerwald
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Andrew C Crowther
- Department of Chemistry, Barnard College, New York, New York 10027, United States
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| |
Collapse
|
30
|
Boosting the electronic and catalytic properties of 2D semiconductors with supramolecular 2D hydrogen-bonded superlattices. Nat Commun 2022; 13:510. [PMID: 35082288 PMCID: PMC8791956 DOI: 10.1038/s41467-022-28116-y] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/19/2021] [Accepted: 12/06/2021] [Indexed: 12/13/2022] Open
Abstract
The electronic properties of two-dimensional semiconductors can be strongly modulated by interfacing them with atomically precise self-assembled molecular lattices, yielding hybrid van der Waals heterostructures (vdWHs). While proof-of-concepts exploited molecular assemblies held together by lateral unspecific van der Waals interactions, the use of 2D supramolecular networks relying on specific non-covalent forces is still unexplored. Herein, prototypical hydrogen-bonded 2D networks of cyanuric acid (CA) and melamine (M) are self-assembled onto MoS2 and WSe2 forming hybrid organic/inorganic vdWHs. The charge carrier density of monolayer MoS2 exhibits an exponential increase with the decreasing area occupied by the CA·M unit cell, in a cooperatively amplified process, reaching 2.7 × 1013 cm−2 and thereby demonstrating strong n-doping. When the 2D CA·M network is used as buffer layer, a stark enhancement in the catalytic activity of monolayer MoS2 for hydrogen evolution reactions is observed, outperforming the platinum (Pt) catalyst via gate modulation. Here, the authors report the functionalization of monolayer transition metal dichalcogenides with hydrogen-bonded 2D supramolecular networks of cyanuric acid and melamine, leading to a pronounced n-doping effect and enhancement of MoS2 catalytic activity for hydrogen evolution reactions.
Collapse
|
31
|
Jeong JH, Kang S, Kim N, Joshi RK, Lee GH. Recent trends in covalent functionalization of 2D materials. Phys Chem Chem Phys 2022; 24:10684-10711. [DOI: 10.1039/d1cp04831g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Covalent functionalization of the surface is more crucial in 2D materials than in conventional bulk materials because of their atomic thinness, large surface-to-volume ratio, and uniform surface chemical potential. Because...
Collapse
|
32
|
Munawar M, Idrees M, Ahmad I, Din HU, Amin B. Intriguing electronic, optical and photocatalytic performance of BSe, M 2CO 2 monolayers and BSe-M 2CO 2 (M = Ti, Zr, Hf) van der Waals heterostructures. RSC Adv 2021; 12:42-52. [PMID: 35424496 PMCID: PMC8978625 DOI: 10.1039/d1ra07569a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/13/2021] [Accepted: 12/01/2021] [Indexed: 12/20/2022] Open
Abstract
Using density functional (DFT) theory calculations, we have investigated the electronic band structure, optical and photocatalytic response of BSe, M2CO2 (M = Ti, Zr, Hf) monolayers and their corresponding BSe-M2CO2 (M = Ti, Zr, Hf) van der Waals (vdW) heterostructures. Optimized lattice constant, bond length, band structure and bandgap values, effective mass of electrons and holes, work function and conduction and valence band edge potentials of BSe and M2CO2 (M = Ti, Zr, Hf) monolayers are in agreement with previously available data. Binding energies, interlayer distance and Ab initio molecular dynamic simulations (AIMD) calculations show that BSe-M2CO2 (M = Ti, Zr, Hf) vdW heterostructures are stable with specific stacking and demonstrate that these heterostructures might be synthesized in the laboratory. The electronic band structure shows that all the studied vdW heterostructures have indirect bandgap nature - with the CBM and VBM at the Γ-K and Γ-point of BZ for BSe-Ti2CO2, respectively; while for BSe-Zr2CO2 and BSe-Hf2CO2 vdW heterostructures the CBM and VBM lie at the K-point and Γ-point of BZ, respectively. Type-II band alignment in BSe-M2CO2 (M = Ti, Zr, Hf) vdW heterostructures prevent the recombination of electron-hole pairs, and hence are crucial for light harvesting and detection. Absorption spectra are investigated to understand the optical behavior of BSe-M2CO2 (M = Ti, Zr, Hf) vdW heterostructures, where the lowest energy transitions are dominated by excitons. Furthermore, BSe-M2CO2 (M = Ti, Zr, Hf) vdW heterostructures are found to be potential photocatalysts for water splitting at pH = 0, and exhibit enhanced optical properties in the visible light zones.
Collapse
Affiliation(s)
- M Munawar
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
| | - M Idrees
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
| | - Iftikhar Ahmad
- Center for Computational Materials Science, University of Malakand Chakdara 18800 Pakistan
- Department of Physics, Gomal University DI Khan Pakistan
| | - H U Din
- Department of Physics, Bacha Khan University Charsadda Pakistan
| | - B Amin
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
| |
Collapse
|
33
|
Kajale SN, Yadav S, Cai Y, Joy B, Sarkar D. 2D material based field effect transistors and nanoelectromechanical systems for sensing applications. iScience 2021; 24:103513. [PMID: 34934930 DOI: 10.1016/j.isci.2021.103513] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022] Open
Abstract
Sensors are ubiquitous in modern society because of their wide applications in healthcare, security, forensic industries as well as environmental protection. Specifically, sensors which can be microfabricated employing very-large-scale-integration (VLSI) compatible microfabrication techniques are particularly desirable. This is because they can provide several advantages: small size, low cost, and possibility of mass fabrication. 2D materials are a promising building block for such sensors. Their atomically thin nature, flat surfaces and ability to form van der Waals hetero junctions opens up the pathway for versatile functionalities. Here, we review 2D material-based field-effect-transistors (FETs) and nano-electro-mechanical systems (NEMs) for applications in detecting different gases, chemicals, and biomolecules. We will provide insights into the unique advantages of these materials for these sensing applications and discuss the fabrication methods, detection schemes and performance pertaining to these technologies. Finally, we will discuss the current challenges and prospects for this field.
Collapse
Affiliation(s)
- Shivam Nitin Kajale
- Media Arts and Science, Massachusetts Institute of Technology, Cambridge, MA 02142, USA
| | - Shubham Yadav
- Media Arts and Science, Massachusetts Institute of Technology, Cambridge, MA 02142, USA
| | - Yubin Cai
- Media Arts and Science, Massachusetts Institute of Technology, Cambridge, MA 02142, USA
| | - Baju Joy
- Media Arts and Science, Massachusetts Institute of Technology, Cambridge, MA 02142, USA
| | - Deblina Sarkar
- Media Arts and Science, Massachusetts Institute of Technology, Cambridge, MA 02142, USA
| |
Collapse
|
34
|
Evans AM, Strauss MJ, Corcos AR, Hirani Z, Ji W, Hamachi LS, Aguilar-Enriquez X, Chavez AD, Smith BJ, Dichtel WR. Two-Dimensional Polymers and Polymerizations. Chem Rev 2021; 122:442-564. [PMID: 34852192 DOI: 10.1021/acs.chemrev.0c01184] [Citation(s) in RCA: 70] [Impact Index Per Article: 23.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
Synthetic chemists have developed robust methods to synthesize discrete molecules, linear and branched polymers, and disordered cross-linked networks. However, two-dimensional polymers (2DPs) prepared from designed monomers have been long missing from these capabilities, both as objects of chemical synthesis and in nature. Recently, new polymerization strategies and characterization methods have enabled the unambiguous realization of covalently linked macromolecular sheets. Here we review 2DPs and 2D polymerization methods. Three predominant 2D polymerization strategies have emerged to date, which produce 2DPs either as monolayers or multilayer assemblies. We discuss the fundamental understanding and scope of each of these approaches, including: the bond-forming reactions used, the synthetic diversity of 2DPs prepared, their multilayer stacking behaviors, nanoscale and mesoscale structures, and macroscale morphologies. Additionally, we describe the analytical tools currently available to characterize 2DPs in their various isolated forms. Finally, we review emergent 2DP properties and the potential applications of planar macromolecules. Throughout, we highlight achievements in 2D polymerization and identify opportunities for continued study.
Collapse
Affiliation(s)
- Austin M Evans
- Department of Chemistry, Northwestern University, 1425 Sheridan Road, Evanston, Illinois 60208, United States
| | - Michael J Strauss
- Department of Chemistry, Northwestern University, 1425 Sheridan Road, Evanston, Illinois 60208, United States
| | - Amanda R Corcos
- Department of Chemistry, Northwestern University, 1425 Sheridan Road, Evanston, Illinois 60208, United States
| | - Zoheb Hirani
- Department of Chemistry, Northwestern University, 1425 Sheridan Road, Evanston, Illinois 60208, United States
| | - Woojung Ji
- Department of Chemistry, Northwestern University, 1425 Sheridan Road, Evanston, Illinois 60208, United States
| | - Leslie S Hamachi
- Department of Chemistry, Northwestern University, 1425 Sheridan Road, Evanston, Illinois 60208, United States.,Department of Chemistry and Biochemistry, California Polytechnic State University, San Luis Obispo, California 93407, United States
| | - Xavier Aguilar-Enriquez
- Department of Chemistry, Northwestern University, 1425 Sheridan Road, Evanston, Illinois 60208, United States
| | - Anton D Chavez
- Department of Chemistry, Northwestern University, 1425 Sheridan Road, Evanston, Illinois 60208, United States
| | - Brian J Smith
- Department of Chemistry, Bucknell University,1 Dent Drive, Lewisburg, Pennsylvania 17837, United States
| | - William R Dichtel
- Department of Chemistry, Northwestern University, 1425 Sheridan Road, Evanston, Illinois 60208, United States
| |
Collapse
|
35
|
2D/2D Heterojunction systems for the removal of organic pollutants: A review. Adv Colloid Interface Sci 2021; 297:102540. [PMID: 34634576 DOI: 10.1016/j.cis.2021.102540] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2021] [Revised: 10/01/2021] [Accepted: 10/03/2021] [Indexed: 12/21/2022]
Abstract
Photocatalysis is considered to be an effective way to remove organic pollutants, but the key to photocatalysis is finding a high-efficiency and stable photocatalyst. 2D materials-based heterojunction has aroused widespread concerns in photocatalysis because of its merits in more active sites, adjustable band gaps and shorter charge transfer distance. Among various 2D heterojunction systems, 2D/2D heterojunction with a face-to-face contact interface is regarded as a highly promising photocatalyst. Due to the strong coupling interface in 2D/2D heterojunction, the separation and migration of photoexcited electron-hole pairs are facilitated, which enhances the photocatalytic performance. Thus, the design of 2D/2D heterojunction can become a potential model for expanding the application of photocatalysis in the removal of organic pollutants. Herein, in this review, we first summarize the fundamental principles, classification, and strategies for elevating photocatalytic performance. Then, the synthesis and application of the 2D/2D heterojunction system for the removal of organic pollutants are discussed. Finally, the challenges and perspectives in 2D/2D heterojunction photocatalysts and their application for removing organic pollutants are presented.
Collapse
|
36
|
Xia Q, Zhao L, Zhang Z, Wang J, Li D, Han X, Zhou Z, Long Y, Dang F, Zhang Y, Chou S. MnCo 2 S 4 -CoS 1.097 Heterostructure Nanotubes as High Efficiency Cathode Catalysts for Stable and Long-Life Lithium-Oxygen Batteries Under High Current Conditions. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2103302. [PMID: 34664424 PMCID: PMC8596117 DOI: 10.1002/advs.202103302] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/30/2021] [Revised: 09/06/2021] [Indexed: 06/13/2023]
Abstract
Constructing the heterostructures is considered to be one of the most effective methods to improve the poor electrical conductivity and insufficient electrocatalytic properties of metal sulfide catalysts. In this work, MnCo2 S4 -CoS1.097 nanotubes are successfully prepared via a reflux- hydrothermal process. This novel cathode catalyst delivers high discharge/charge specific capacities of 21 765/21 746 mAh g-1 at 200 mA g-1 and good rate capability. In addition, a favorable cycling stability with a fixed specific capacity of 1000 mAh g-1 at high current density of 1000 mA g-1 (167 cycles) and 2000 mA g-1 (57 cycles) are delivered. It is proposed that fast transmission of ions and electrons accelerated by the built-in electric field, multiple active sites from the heterostructure, and nanotube architecture with large specific surface area are responsible for the superior electrochemical performance. To some extent, the rational design of this heterostructured metal sulfide catalyst provides guidance for the development of the stable and efficient cathode catalysts for Li-O2 batteries that can be employed under high current conditions.
Collapse
Affiliation(s)
- Qing Xia
- Key Laboratory for Liquid‐Solid Structural Evolution and Processing of Materials (Ministry of Education)Shandong UniversityJinan250061China
- Institute for Carbon NeutralizationCollege of Chemistry and Materials EngineeringWenzhou UniversityWenzhou325035China
| | - Lanling Zhao
- School of PhysicsShandong UniversityJinan250100P. R. China
| | - Zhijia Zhang
- School of Materials Science and EngineeringTiangong UniversityTianjin300387China
| | - Jun Wang
- Key Laboratory for Liquid‐Solid Structural Evolution and Processing of Materials (Ministry of Education)Shandong UniversityJinan250061China
| | - Deyuan Li
- Key Laboratory for Liquid‐Solid Structural Evolution and Processing of Materials (Ministry of Education)Shandong UniversityJinan250061China
| | - Xue Han
- Key Laboratory for Liquid‐Solid Structural Evolution and Processing of Materials (Ministry of Education)Shandong UniversityJinan250061China
| | - Zhaorui Zhou
- Key Laboratory for Liquid‐Solid Structural Evolution and Processing of Materials (Ministry of Education)Shandong UniversityJinan250061China
| | - Yuxin Long
- Key Laboratory for Liquid‐Solid Structural Evolution and Processing of Materials (Ministry of Education)Shandong UniversityJinan250061China
| | - Feng Dang
- Key Laboratory for Liquid‐Solid Structural Evolution and Processing of Materials (Ministry of Education)Shandong UniversityJinan250061China
| | - Yiming Zhang
- Key Laboratory for Liquid‐Solid Structural Evolution and Processing of Materials (Ministry of Education)Shandong UniversityJinan250061China
| | - Shulei Chou
- Institute for Carbon NeutralizationCollege of Chemistry and Materials EngineeringWenzhou UniversityWenzhou325035China
| |
Collapse
|
37
|
Schaal M, Picker J, Otto F, Gruenewald M, Forker R, Fritz T. An alternative route towards the fabrication of 2D blue phosphorene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:485002. [PMID: 34399408 DOI: 10.1088/1361-648x/ac1dde] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/25/2021] [Accepted: 08/16/2021] [Indexed: 06/13/2023]
Abstract
Blue phosphorene (BlueP) is a novel two-dimensional material that shares properties with black phosphorene and is potentially even more interesting for opto-electronic applications because of its layer dependent wide band gap of ≈ 2 to 3 eV and superior charge carrier mobility. It was first fabricated on Au(111), where, however, a network consisting of BlueP subunits and Au-linker atoms is formed. The physical properties of such an arrangement strongly differ from a freestanding BlueP monolayer. Here, we report on the growth of epitaxial BlueP on the Au(100) surface, which is an interesting alternative when aiming at quasi-freestanding BlueP domains. We find two different phosphorus phases by means of scanning tunneling microscopy and distortion-corrected low-energy electron diffraction. In the low coverage regime, we observe a commensurate (2 × 2) phase, whereas for higher coverage, a nearly hexagonal structure is formed. For the latter, the lattice parameters measured via atomically resolved scanning tunneling hydrogen microscopy closely resemble those of freestanding BlueP, and the typical height modulation of the phosphorus atoms is verified in our layers by means of x-ray photoelectron diffraction. We further analyze the chemical and electronic properties of these films by means of x-ray and (angle resolved) ultraviolet photoelectron spectroscopy.
Collapse
Affiliation(s)
- M Schaal
- Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 5, 07743 Jena, Germany
| | - J Picker
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstraße 10, 07743 Jena, Germany
| | - F Otto
- Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 5, 07743 Jena, Germany
| | - M Gruenewald
- Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 5, 07743 Jena, Germany
| | - R Forker
- Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 5, 07743 Jena, Germany
| | - T Fritz
- Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 5, 07743 Jena, Germany
| |
Collapse
|
38
|
Wu Z, Tai G, Liu R, Hou C, Shao W, Liang X, Wu Z. van der Waals Epitaxial Growth of Borophene on a Mica Substrate toward a High-Performance Photodetector. ACS APPLIED MATERIALS & INTERFACES 2021; 13:31808-31815. [PMID: 34213879 DOI: 10.1021/acsami.1c03146] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The emergence of borophene has triggered soaring interest in the investigation of its superior structural anisotropy, a novel photoelectronic property for diverse potential applications. However, the structural instability and need of a metal substrate for depositing borophene restrict its large-scale applications toward high-performance electronic and optoelectric devices. van der Waals epitaxy is regarded as an efficient technique for growing superb two-dimensional materials onto extensive functional substrates, but the preparation of stable and controllable borophene on nonmetallic substrates is still not reported. Here, we demonstrate that borophene films can be synthesized onto a mica substrate by van der Waals epitaxy, where hydrogen and NaBH4 are respectively used as the carrier gas and the boron source. The lattice structure of the as-synthesized borophene coincides with the predicted α'-boron sheet. The borophene-based photodetector shows an excellent photoresponsivity of 1.04 A W-1 and a specific detectivity of 1.27 × 1011 Jones at a reversed bias of 4 V under illumination of a 625 nm light-emitting diode, which are remarkably superior to those of reported boron nanosheets. This work facilitates further studies of borophene toward its attractive properties and applications in novel optoelectronic devices and integrated circuits.
Collapse
Affiliation(s)
- Zenghui Wu
- The State Key Laboratory of Mechanics and Control of Mechanical Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Guoan Tai
- The State Key Laboratory of Mechanics and Control of Mechanical Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Runsheng Liu
- The State Key Laboratory of Mechanics and Control of Mechanical Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Chuang Hou
- The State Key Laboratory of Mechanics and Control of Mechanical Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Wei Shao
- The State Key Laboratory of Mechanics and Control of Mechanical Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Xinchao Liang
- The State Key Laboratory of Mechanics and Control of Mechanical Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Zitong Wu
- The State Key Laboratory of Mechanics and Control of Mechanical Structures, Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| |
Collapse
|
39
|
Kim J, Venkatesan A, Kim H, Kim Y, Whang D, Kim G. Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS 2 /MoTe 2 Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100102. [PMID: 34105270 PMCID: PMC8188188 DOI: 10.1002/advs.202100102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/12/2021] [Revised: 02/01/2021] [Indexed: 06/12/2023]
Abstract
Manipulation of Ohmic contacts in 2D transition metal dichalcogenides for enhancing the transport properties and enabling its application as a practical device has been a long-sought goal. In this study, n-type tungsten disulfide (WS2 ) single atomic layer to improve the Ohmic contacts of the p-type molybdenum ditelluride (MoTe2 ) material is covered. The Ohmic properties, based on the lowering of Schottky barrier height (SBH) owing to the tunneling barrier effect of the WS2 monolayer, are found to be unexpectedly excellent at room temperature and even at 100 K. The improved SBH and contact resistances are 3 meV and 1 MΩ µm, respectively. The reduction in SBH and contact resistance is confirmed with temperature-dependent transport measurements. This study further demonstrates the selective carrier transport across the MoTe2 and WS2 layers by modulating the applied gate voltage. This WS2 /MoTe2 heterostructure exhibits excellent gate control over the currents of both channels (n-type and p-type). The on/off ratios for both the electron and hole channels are calculated as 107 and 106 , respectively, indicating good carrier type modulation by the electric field of the gate electrode. The Ohmic contact resistance using the tunneling of the atomic layer can be applied to heterojunction combinations of various materials.
Collapse
Affiliation(s)
- Jihoon Kim
- School of Electronic and Electrical EngineeringSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - A. Venkatesan
- School of Electronic and Electrical EngineeringSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Hanul Kim
- Samsung‐SKKU Graphene CentreSungkyunkwan Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Yewon Kim
- School of Electronic and Electrical EngineeringSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Dongmok Whang
- Samsung‐SKKU Graphene CentreSungkyunkwan Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
- School of Advanced Materials Science and EngineeringSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Gil‐Ho Kim
- School of Electronic and Electrical EngineeringSungkyunkwan University (SKKU)Suwon16419Republic of Korea
- Samsung‐SKKU Graphene CentreSungkyunkwan Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| |
Collapse
|
40
|
Gbadamasi S, Mohiuddin M, Krishnamurthi V, Verma R, Khan MW, Pathak S, Kalantar-Zadeh K, Mahmood N. Interface chemistry of two-dimensional heterostructures - fundamentals to applications. Chem Soc Rev 2021; 50:4684-4729. [PMID: 33621294 DOI: 10.1039/d0cs01070g] [Citation(s) in RCA: 50] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Two-dimensional heterostructures (2D HSs) have emerged as a new class of materials where dissimilar 2D materials are combined to synergise their advantages and alleviate shortcomings. Such a combination of dissimilar components into 2D HSs offers fascinating properties and intriguing functionalities attributed to the newly formed heterointerface of constituent components. Understanding the nature of the surface and the complex heterointerface of HSs at the atomic level is crucial for realising the desired properties, designing innovative 2D HSs, and ultimately unlocking their full potential for practical applications. Therefore, this review provides the recent progress in the field of 2D HSs with a focus on the discussion of the fundamentals and the chemistry of heterointerfaces based on van der Waals (vdW) and covalent interactions. It also explains the challenges associated with the scalable synthesis and introduces possible methodologies to produce large quantities with good control over the heterointerface. Subsequently, it highlights the specialised characterisation techniques to reveal the heterointerface formation, chemistry and nature. Afterwards, we give an overview of the role of 2D HSs in various emerging applications, particularly in high-power batteries, bifunctional catalysts, electronics, and sensors. In the end, we present conclusions with the possible solutions to the associated challenges with the heterointerfaces and potential opportunities that can be adopted for innovative applications.
Collapse
|
41
|
Chu J, Wang Y, Wang X, Hu K, Rao G, Gong C, Wu C, Hong H, Wang X, Liu K, Gao C, Xiong J. 2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004469. [PMID: 33325574 DOI: 10.1002/adma.202004469] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2020] [Revised: 07/21/2020] [Indexed: 06/12/2023]
Abstract
The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices' application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.
Collapse
Affiliation(s)
- Junwei Chu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xuepeng Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Kai Hu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Gaofeng Rao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chuanhui Gong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chunchun Wu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Hao Hong
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Chunlei Gao
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Physics, and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| |
Collapse
|
42
|
Liu X, Wang L, Yakobson BI, Hersam MC. Nanoscale Probing of Image-Potential States and Electron Transfer Doping in Borophene Polymorphs. NANO LETTERS 2021; 21:1169-1174. [PMID: 33455160 DOI: 10.1021/acs.nanolett.0c04869] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Because synthetic 2D materials are generally stabilized by interfacial coupling to growth substrates, direct probing of interfacial phenomena is critical for understanding their nanoscale structure and properties. Using field-emission resonance spectroscopy with an ultrahigh vacuum scanning tunneling microscope, we reveal Stark-shifted image-potential states of the v1/6 and v1/5 borophene polymorphs on Ag(111) with long lifetimes, suggesting high borophene lattice and interface quality. These image-potential states allow the local work function and interfacial charge transfer of borophene to be probed at the nanoscale and test the widely employed self-doping model of borophene. Supported by apparent barrier height measurements and density functional theory calculations, electron transfer doping occurs for both borophene phases from the Ag(111) substrate. In contradiction with the self-doping model, a higher electron transfer doping level occurs for denser v1/6 borophene compared to v1/5 borophene, thus revealing the importance of substrate effects on borophene electron transfer.
Collapse
Affiliation(s)
- Xiaolong Liu
- Applied Physics Graduate Program, Northwestern University, Evanston, Illinois 60208, United States
| | - Luqing Wang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Department of Chemistry, Rice University, Houston, Texas 77005, United States
| | - Mark C Hersam
- Applied Physics Graduate Program, Northwestern University, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| |
Collapse
|
43
|
Yang S, Lee G, Kim J. Selective p-Doping of 2D WSe 2 via UV/Ozone Treatments and Its Application in Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:955-961. [PMID: 33379863 DOI: 10.1021/acsami.0c19712] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Development of two-dimensional (2D) semiconductor devices with good Ohmic contact is essential to utilize their full potential for nanoelectronics applications. Among the methods that have been introduced to reduce the Schottky barrier in 2D material-based electronic devices, charge transfer doping has attracted significant interest because of its efficiency, simplicity, and compatibility with the microelectronic fabrication process. In this study, 2D WSe2-based field-effect transistors (FETs) were subjected to selective UV/ozone treatment to improve the Ohmic contact by forming WOX with a high work function, which induced hole doping in the neighboring WSe2 via electron transfer. The atomic force microscopy, cross-sectional transmission electron microscopy, and micro-Raman spectroscopy analyses confirmed the self-limiting formation of WOX while maintaining the crystallinity of the underlying WSe2. The channel layer of the back-gated 2D WSe2 FETs was encapsulated using 2D hexagonal boron nitride to prevent the UV/ozone-induced oxidation. By contrast, the regions that were in contact with the underlying metal electrodes were open, which allowed area-selective p-doping in the 2D WSe2. Our study demonstrated that the Ohmic-like behaviors obtained after area-selective UV/ozone treatment improved the electrical properties of the 2D WSe2-based FETs such as the field-effect mobility (improvement of 3-4 orders of magnitude) and current on/off ratio (improvement of five orders of magnitude), while maintaining the p-type normally-off characteristics. These results provide useful insights into an effective and facile method to reduce contact resistance in 2D semiconductor materials, thereby enhancing the electrical performances of 2D material-based electronic devices.
Collapse
Affiliation(s)
- Sujeong Yang
- Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Korea
| | - Geonyeop Lee
- Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Korea
| | - Jihyun Kim
- Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Korea
| |
Collapse
|
44
|
Oaki Y. Intercalation and flexibility chemistries of soft layered materials. Chem Commun (Camb) 2020; 56:13069-13081. [PMID: 33021619 DOI: 10.1039/d0cc05931e] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Abstract
Layered materials, alternate stackings of two or more components, are found in a wide range of scales. Chemists can design and synthesize layered structures containing functional units. The soft-type layered materials exhibit characteristic dynamic functions originating from two-dimensional (2D) anisotropy and structure flexibility. This feature article focuses on "intercalation" and "flexibility" as two new perspectives for designing soft layered materials. Intercalation of guests is a characteristic approach for design of layered structures. Flexibility is an important factor to control the dynamic functions of the layered structures. As a model case, the intercalation-induced tunable stimuli-responsive color-change properties of layered polydiacetylene (PDA) are introduced to study the impact of the intercalation and flexibility on the dynamic functions. Recently, layered materials have drastically expanded the research area from conventional rigid inorganic compounds to new self-assembled nanostructures consisting of organic components, such as polymers, metal-organic frameworks, and covalent-organic frameworks. These new layered architectures have potentials for exhibiting dynamic functions originating from the structure flexibility beyond the static properties originating from classical intercalation and host-guest chemistries. Therefore, intercalation and flexibility chemistries of soft layered materials are regarded as new perspectives for design of advanced dynamic functional materials.
Collapse
Affiliation(s)
- Yuya Oaki
- Department of Applied Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan.
| |
Collapse
|
45
|
Gao P, Li X, Yang J. Proposed mechanical method for switching the spin transport channel in two-dimensional magnetic metal-magnetic semiconductor van der Waals contacts. NANOSCALE HORIZONS 2020; 5:1496-1499. [PMID: 32844856 DOI: 10.1039/d0nh00289e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Developing simple nonmagnetic methods to efficiently control spin transport across magnetic metal-magnetic semiconductor contacts plays a key role in developing high-performance nano-spintronic devices, since a magnetic field is hard to apply locally. For this purpose, based on first principles calculations, we here propose a mechanical means for manipulating the spin transport across two-dimensional magnetic metal-magnetic semiconductor van der Waals contacts formed between representative metallic Fe3GeTe2 and semiconducting CrGeTe3/CrI3 nanosheets. For such contacts, there exist four spin resolved Schottky barriers, i.e. the n/p-type Schottky barriers in the up/down spin channels, in which the dominant transport spin channel, characterized by the lowest Schottky barrier, can be selectively switched by regulating the magnetic coupling between the magnetic metal and magnetic semiconductor via interfacial sliding. In this way, single spin channel ohmic contacts with reversible spin polarization have been realized.
Collapse
Affiliation(s)
- Pengfei Gao
- Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
| | | | | |
Collapse
|
46
|
Zheng J, Wu Y, Sun Y, Rong J, Li H, Niu L. Advanced Anode Materials of Potassium Ion Batteries: from Zero Dimension to Three Dimensions. NANO-MICRO LETTERS 2020; 13:12. [PMID: 34138200 PMCID: PMC8187553 DOI: 10.1007/s40820-020-00541-y] [Citation(s) in RCA: 36] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2020] [Accepted: 09/28/2020] [Indexed: 05/17/2023]
Abstract
Potassium ion batteries (PIBs) with the prominent advantages of sufficient reserves and economical cost are attractive candidates of new rechargeable batteries for large-grid electrochemical energy storage systems (EESs). However, there are still some obstacles like large size of K+ to commercial PIBs applications. Therefore, rational structural design based on appropriate materials is essential to obtain practical PIBs anode with K+ accommodated and fast diffused. Nanostructural design has been considered as one of the effective strategies to solve these issues owing to unique physicochemical properties. Accordingly, quite a few recent anode materials with different dimensions in PIBs have been reported, mainly involving in carbon materials, metal-based chalcogenides (MCs), metal-based oxides (MOs), and alloying materials. Among these anodes, nanostructural carbon materials with shorter ionic transfer path are beneficial for decreasing the resistances of transportation. Besides, MCs, MOs, and alloying materials with nanostructures can effectively alleviate their stress changes. Herein, these materials are classified into 0D, 1D, 2D, and 3D. Particularly, the relationship between different dimensional structures and the corresponding electrochemical performances has been outlined. Meanwhile, some strategies are proposed to deal with the current disadvantages. Hope that the readers are enlightened from this review to carry out further experiments better.
Collapse
Affiliation(s)
- Jiefeng Zheng
- Department of Materials Science and Engineering, College of Chemistry and Materials Science, Jinan University, Guangzhou, 510632, People's Republic of China
| | - Yuanji Wu
- Department of Materials Science and Engineering, College of Chemistry and Materials Science, Jinan University, Guangzhou, 510632, People's Republic of China
| | - Yingjuan Sun
- Department of Materials Science and Engineering, College of Chemistry and Materials Science, Jinan University, Guangzhou, 510632, People's Republic of China
| | - Jianhua Rong
- Department of Materials Science and Engineering, College of Chemistry and Materials Science, Jinan University, Guangzhou, 510632, People's Republic of China
| | - Hongyan Li
- Department of Materials Science and Engineering, College of Chemistry and Materials Science, Jinan University, Guangzhou, 510632, People's Republic of China.
| | - Li Niu
- Center for Advanced Analytical Science, c/o School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, People's Republic of China
| |
Collapse
|
47
|
Abstract
Grain boundaries (GBs) are a kind of lattice imperfection widely existing in two-dimensional materials, playing a critical role in materials' properties and device performance. Related key issues in this area have drawn much attention and are still under intense investigation. These issues include the characterization of GBs at different length scales, the dynamic formation of GBs during the synthesis, the manipulation of the configuration and density of GBs for specific material functionality, and the understanding of structure-property relationships and device applications. This review will provide a general introduction of progress in this field. Several techniques for characterizing GBs, such as direct imaging by high-resolution transmission electron microscopy, visualization techniques of GBs by optical microscopy, plasmon propagation, or second harmonic generation, are presented. To understand the dynamic formation process of GBs during the growth, a general geometric approach and theoretical consideration are reviewed. Moreover, strategies controlling the density of GBs for GB-free materials or materials with tunable GB patterns are summarized, and the effects of GBs on materials' properties are discussed. Finally, challenges and outlook are provided.
Collapse
Affiliation(s)
- Wenqian Yao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, P.R. China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, P.R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, P.R. China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| |
Collapse
|
48
|
|
49
|
Paul Inbaraj CR, Mathew RJ, Ulaganathan RK, Sankar R, Kataria M, Lin HY, Cheng HY, Lin KH, Lin HI, Liao YM, Chou FC, Chen YT, Lee CH, Chen YF. Modulating Charge Separation with Hexagonal Boron Nitride Mediation in Vertical Van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2020; 12:26213-26221. [PMID: 32400164 DOI: 10.1021/acsami.0c06077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Tuning the optical and electrical properties by stacking different layers of two-dimensional (2D) materials enables us to create unusual physical phenomena. Here, we demonstrate an alternative approach to enhance charge separation and alter physical properties in van der Waals heterojunctions with type-II band alignment by using thin dielectric spacers. To illustrate our working principle, we implement a hexagonal boron nitride (h-BN) sieve layer in between an InSe/GeS heterojunction. The optical transitions at the junctions studied by photoluminescence and the ultrafast pump-probe technique show quenching of emission without h-BN layers exhibiting an indirect recombination process. This quenching effect due to strong interlayer coupling was confirmed with Raman spectroscopic studies. In contrast, h-BN layers in between InSe and GeS show strong enhancement in emission, giving another degree of freedom to tune the heterojunction property. The two-terminal photoresponse study supports the argument by showing a large photocurrent density for an InSe/h-BN/GeS device by avoiding interlayer charge recombination. The enhanced charge separation with h-BN mediation manifests a photoresponsivity and detectivity of 9 × 102 A W-1 and 3.4 × 1014 Jones, respectively. Moreover, a photogain of 1.7 × 103 shows a high detection of electrons for the incident photons. Interestingly, the photovoltaic short-circuit current is switched from positive to negative, whereas the open-circuit voltage changes from negative to positive. Our proposed enhancement of charge separation with 2D-insulator mediation, therefore, provides a useful route to manipulate the physical properties of heterostructures and for the future development of high-performance optoelectronic devices.
Collapse
Affiliation(s)
- Christy Roshini Paul Inbaraj
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Nano-Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Roshan Jesus Mathew
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Nano-Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
| | | | - Raman Sankar
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Monika Kataria
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Physics, National Central University, Chung-Li 320, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Advanced Research Centre for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Hsia Yu Lin
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Hao-Yu Cheng
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Kung-Hsuan Lin
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Hung-I Lin
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Yu-Ming Liao
- Nano-Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Fang Cheng Chou
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
| | - Yit-Tsong Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan
| | - Chih-Hao Lee
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Centre for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| |
Collapse
|
50
|
Padgaonkar S, Olding JN, Lauhon LJ, Hersam MC, Weiss EA. Emergent Optoelectronic Properties of Mixed-Dimensional Heterojunctions. Acc Chem Res 2020; 53:763-772. [PMID: 31961121 DOI: 10.1021/acs.accounts.9b00581] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
ConspectusThe electronic dimensionality of a material is defined by the number of spatial degrees of confinement of its electronic wave function. Low-dimensional semiconductor nanomaterials with at least one degree of spatial confinement have optoelectronic properties that are tunable with size and environment (dielectric and chemical) and are of particular interest for optoelectronic applications such as light detection, light harvesting, and photocatalysis. By combining nanomaterials of differing dimensionalities, mixed-dimensional heterojunctions (MDHJs) exploit the desirable characteristics of their components. For example, the strong optical absorption of zero-dimensional (0D) materials combined with the high charge carrier mobilities of two-dimensional (2D) materials widens the spectral response and enhances the responsivity of mixed-dimensional photodetectors, which has implications for ultrathin, flexible optoelectronic devices. MDHJs are highly sensitive to (i) interfacial chemistry because of large surface area-to-volume ratios and (ii) electric fields, which are incompletely screened because of the ultrathin nature of MDHJs. This sensitivity presents opportunities for control of physical phenomena in MDHJs through chemical modification, optical excitation, externally applied electric fields, and other environmental parameters. Since this fast-moving research area is beginning to pose and answer fundamental questions that underlie the fundamental optoelectronic behavior of MDHJs, it is an opportune time to assess progress and suggest future directions in this field.In this Account, we first outline the characteristic properties, advantages, and challenges for low-dimensional materials, many of which arise as a result of quantum confinement effects. The optoelectronic properties and performance of MDHJs are primarily determined by dynamics of excitons and charge carriers at their interfaces, where these particles tunnel, trap, scatter, and/or recombine on the time scales of tens of femtoseconds to hundreds of nanoseconds. We discuss several photophysical phenomena that deviate from those observed in bulk heterojunctions, as well as factors that can be used to vary, probe, and ultimately control the behavior of excitons and charge carriers in MDHJ systems. We then discuss optoelectronic applications of MDHJs, namely, photodetectors, photovoltaics, and photocatalysts, and identify current performance limits compared to state-of-the-art benchmarks. Finally, we suggest strategies to extend the current understanding of dynamics in MDHJs toward the realization of stimuli-driven responses, particularly with respect to exciton delocalization, quantum emission, interfacial morphology, responsivity to external stimuli, spin selectivity, and usage of chemically reactive materials.
Collapse
|