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Sun L, Tang K, Wan P, Liu M, Shi D, Kan C, Jiang M. Plasmonically-boosted exciton-photon coupling strength in a near-infrared LED based on a ZnO:Ga microwire/GaAs heterojunction with surface-coated Au&Ag alloy nanorods. Phys Chem Chem Phys 2024; 26:26051-26063. [PMID: 39373983 DOI: 10.1039/d4cp03265a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/08/2024]
Abstract
The development of electrically-driven low-dimensional coherent light sources via highly-polarized polariton emission behavior has been extensively researched, but suffers from limited modulation of the exciton-photon coupling strengths. Herein, an electrically-biased near-infrared exciton-polariton light-emitting diode (LED), which includes a Ga-doped ZnO microwire (ZnO:Ga MW) and p-type GaAs substrate, is demonstrated. The well-designed LED structure is conducive to producing strong coupling between excitons and cavity photons, thus yielding highly-polarized light-emissions due to the optical birefringence in the ZnO:Ga MW microcavity. In particular, when the LED device is modified using Au&Ag alloy nanorods (AuAgNRs) with desired plasmonic properties, the electroluminescence (EL) performance is significantly boosted, especially the Rabi-splitting energy, which increases from 96 to 285 meV. The current-injection exciton-polariton emission from the LED undergoing a strong coupling regime is confirmed through angle-resolved EL measurements. This study exhibits a performance-boosted near-infrared exciton-polariton LED at room temperature, which provides a new scheme toward the realization of highly energy-efficient polariton coherent light sources. Further, the significantly lower density of polariton states induced by the incorporated metal nanostructures highlights a bright future of realizing ultralow-threshold polariton lasers much more feasibly, in comparison to conventional lasers based on narrow bandgap semiconductors.
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Affiliation(s)
- Lixiang Sun
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Kai Tang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Peng Wan
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Maosheng Liu
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Daning Shi
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Caixia Kan
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
| | - Mingming Jiang
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
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2
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Yin Z, Tang H, Wang K, Zhang X, Sha X, Wang W, Xiao S, Song Q. Ultracompact and Uniform Nanoemitter Array Based on Periodic Scattering. NANO LETTERS 2024; 24:12612-12619. [PMID: 39331014 DOI: 10.1021/acs.nanolett.4c03690] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2024]
Abstract
As emerging gain materials, lead halide perovskites have drawn considerable attention in coherent light sources. With the development of patterning and integration techniques, a perovskite laser array has been realized by distributing perovskite microcrystals periodically. Nevertheless, the packing density is limited by the crystal size and the channel gap distance. More importantly, the lasing performance for individual laser units is quite random due to variation of size and crystal quality. Herein an ultracompact perovskite nanoemitter array with uniform emission has been demonstrated. Individual emitters are formed via scattering evanescent components from a shared Fabry-Perot laser, ensuring uniform lasing emission in a unit cell with a side length of 160 nm and lattice constant of 400 nm. And the periodic silicon scatterers do not deteriorate the lasing threshold dramatically. In addition, the surface emitting efficiency increased significantly. The direct integration of a densely packed nanoemitter array with a silicon platform promises high-throughput sensing and high-capacity optical interconnects.
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Affiliation(s)
- Zhen Yin
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Haijun Tang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Kaiyang Wang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Xudong Zhang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Xinbo Sha
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Wenchao Wang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Shumin Xiao
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
- Pengcheng Laboratory, Shenzhen 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, P. R. China
| | - Qinghai Song
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
- Pengcheng Laboratory, Shenzhen 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, P. R. China
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Mou N, Tang B, Han B, Yu J, Zhang D, Bai Z, Zhong M, Xie B, Zhang Z, Deng S, Rogach AL, Hu J, Guan J. Large-Area Perovskite Nanocrystal Metasurfaces for Direction-Tunable Lasing. NANO LETTERS 2024; 24:12676-12683. [PMID: 39321410 DOI: 10.1021/acs.nanolett.4c03921] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/27/2024]
Abstract
Perovskite nanocrystals (PNCs) are attractive emissive materials for developing compact lasers. However, manipulation of PNC laser directionality has been difficult, which limits their usage in photonic devices that require on-demand tunability. Here we demonstrate PNC metasurface lasers with engineered emission angles. We fabricated millimeter-scale CsPbBr3 PNC metasurfaces using an all-solution-processing technique based on soft nanoimprinting lithography. By designing band-edge photonic modes at the high-symmetry X point of the reciprocal lattice, we achieved four linearly polarized lasing beams along a polar angle of ∼30° under optical pumping. The device architecture further allows tuning of the lasing emission angles to 0° and ∼50°, respectively, by adjusting the PNC thickness to shift other high-symmetry points (Γ and M) to the PNC emission wavelength range. Our laser design strategies offer prospects for applications in directional optical antennas and detectors, 3D laser projection displays, and multichannel visible light communication.
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Affiliation(s)
- Nanli Mou
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, P. R. China
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Bing Tang
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong SAR 999077, P. R. China
| | - Bowen Han
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, P. R. China
| | - Jingyue Yu
- State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
- 2020 X-Lab, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
- School of Graduate Study, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Delin Zhang
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, P. R. China
| | - Zichun Bai
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, P. R. China
| | - Mou Zhong
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, P. R. China
| | - Biye Xie
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, P. R. China
| | - Zhaoyu Zhang
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, P. R. China
| | - Shikai Deng
- State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
- 2020 X-Lab, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
- School of Graduate Study, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Andrey L Rogach
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong SAR 999077, P. R. China
- International Research Center, Harbin Engineering University (Qingdao Branch), Qingdao 266555, P. R. China
| | - Jingtian Hu
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Jun Guan
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, P. R. China
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
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4
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Freire-Fernández F, Sinai NG, Hui Tan MJ, Park SM, Koessler ER, Krauss T, Huo P, Odom TW. Room-Temperature Polariton Lasing from CdSe Core-Only Nanoplatelets. ACS NANO 2024; 18:15177-15184. [PMID: 38808728 DOI: 10.1021/acsnano.4c03164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
This paper reports how CdSe core-only nanoplatelets (NPLs) coupled with plasmonic Al nanoparticle lattices can exhibit exciton-polariton lasing. By improving a procedure to synthesize monodisperse 4-monolayer CdSe NPLs, we could resolve polariton decay dynamics and pathways. Experiment and theory confirmed that the system is in the strong coupling regime based on anticrossings in the dispersion diagrams and magnitude of the Rabi-splitting values. Notably, polariton lasing is observed only for cavity lattice periodicities that exhibit specific dispersive characteristics that enable polariton accumulation. The threshold of polariton lasing is 25-fold lower than the reported photon lasing values from CdSe NPLs in similar cavity designs. This open-cavity platform offers a simple approach to control exciton polaritons anticipated to benefit quantum information processing, optoelectronics, and chemical reactions.
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Affiliation(s)
| | - Nathan G Sinai
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Max Jin Hui Tan
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Sang-Min Park
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Eric Rodolfo Koessler
- Department of Chemistry, University of Rochester, Rochester, New York 14627, United States
| | - Todd Krauss
- Department of Chemistry, University of Rochester, Rochester, New York 14627, United States
- Institute of Optics, University of Rochester, Rochester, New York 14627, United States
| | - Pengfei Huo
- Department of Chemistry, University of Rochester, Rochester, New York 14627, United States
- Institute of Optics, University of Rochester, Rochester, New York 14627, United States
| | - Teri W Odom
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
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5
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Moon J, Mehta Y, Gundogdu K, So F, Gu Q. Metal-Halide Perovskite Lasers: Cavity Formation and Emission Characteristics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2211284. [PMID: 36841548 DOI: 10.1002/adma.202211284] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 02/08/2023] [Indexed: 06/18/2023]
Abstract
Hybrid metal-halide perovskites (MHPs) have shown remarkable optoelectronic properties as well as facile and cost-effective processability. With the success of MHP solar cells and light-emitting diodes, MHPs have also exhibited great potential as gain media for on-chip lasers. However, to date, stable operation of optically pumped MHP lasers and electrically driven MHP lasers-an essential requirement for MHP laser's insertion into chip-scale photonic integrated circuits-is not yet demonstrated. The main obstacles include the instability of MHPs in the atmosphere, rudimentary MHP laser cavity patterning methods, and insufficient understanding of emission mechanisms in MHP materials and cavities. This review aims to provide a detailed overview of different strategies to improve the intrinsic properties of MHPs in the atmosphere and to establish an optimal MHP cavity patterning method. In addition, this review discusses different emission mechanisms in MHP materials and cavities and how to distinguish them.
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Affiliation(s)
- Jiyoung Moon
- Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Yash Mehta
- Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
| | - Kenan Gundogdu
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
- Physics, North Carolina State University, Raleigh, NC, 27695, USA
| | - Franky So
- Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
| | - Qing Gu
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
- Physics, North Carolina State University, Raleigh, NC, 27695, USA
- Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695, USA
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6
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Fan C, Zhu M, Xu X, Wang P, Zhang Q, Dai X, Yang K, He H, Ye Z. Self-Competitive Growth of CsPbBr 3 Planar Nanowire Array. NANO LETTERS 2024; 24:3750-3758. [PMID: 38488747 DOI: 10.1021/acs.nanolett.4c00271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Semiconductor planar nanowire arrays (PNAs) are essential for achieving large-scale device integration. Direct heteroepitaxy of PNAs on a flat substrate is constrained by the mismatch in crystalline symmetry and lattice parameters between the substrate and epitaxial nanowires. This study presents a novel approach termed "self-competitive growth" for heteroepitaxy of CsPbBr3 PNAs on mica. The key to inducing the self-competitive growth of CsPbBr3 PNAs on mica involves restricting the nucleation of CsPbBr3 nanowires in a high-adsorption region, which is accomplished by overlaying graphite sheets on the mica surface. Theoretical calculations and experimental results demonstrate that CsPbBr3 nanowires oriented perpendicular to the boundary of the high-adsorption area exhibit greater competitiveness in intercepting the growth of nanowires in the other two directions, resulting in PNAs with a consistent orientation. Moreover, these PNAs exhibit low-threshold and stable amplified spontaneous emission under one-, two-, and three-photon excitation, indicating their potential for an integrated laser array.
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Affiliation(s)
- Chao Fan
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, People's Republic of China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, Shanxi 030000 People's Republic of China
| | - Meiyi Zhu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, People's Republic of China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, Shanxi 030000 People's Republic of China
| | - Xing Xu
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421010, People's Republic of China
| | - Peng Wang
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, People's Republic of China
| | - Qinglin Zhang
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, People's Republic of China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, Shanxi 030000 People's Republic of China
| | - Ke Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, People's Republic of China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, People's Republic of China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, Shanxi 030000 People's Republic of China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, People's Republic of China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, Shanxi 030000 People's Republic of China
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7
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Ning S, Liu Z, Wang S, Zhang N, Yang B, Wang X, Zhang F. Remarkable emission enhancement of CsPbBr 3 quantum dots based on an Ag nanoparticle-Ag film plasmonic coupling structure. OPTICS EXPRESS 2024; 32:9276-9286. [PMID: 38571165 DOI: 10.1364/oe.515772] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Accepted: 02/13/2024] [Indexed: 04/05/2024]
Abstract
All-inorganic halide perovskite quantum dots (QDs) have recently received much attention due to their excellent optoelectronic properties. And their emission properties still need to be improved for further applications. Here, we demonstrated a remarkable emission enhancement of the CsPbBr3 QDs based on an Ag nanoparticle-Ag film plasmonic coupling structure. Through precise control of the gap distance between Ag nanoparticle and Ag film, the localized surface plasmon resonance (LSPR) peak was tuned to match the emission wavelength of the CsPbBr3 QDs. We achieved a 30-fold fluorescence intensity enhancement and a lower lasing threshold, which is 25% of that of the CsPbBr3 QDs without plasmonic coupling structure. It is attributed to that the plasmonic coupling structure exhibits an extremely strong local electric field owing to the coupling between LSPR of Ag nanoparticle and surface plasmon polariton of Ag film. This work provides an effective way to enhance the optical emission of perovskite QDs and promotes the further exploration of on-chip light source.
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8
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He C, Tang Z, Liu L, Maier SA, Wang X, Ren H, Pan A. Nonlinear Boost of Optical Angular Momentum Selectivity by Hybrid Nanolaser Circuits. NANO LETTERS 2024; 24:1784-1791. [PMID: 38265953 DOI: 10.1021/acs.nanolett.3c04830] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Selective control of light is essential for optical science and technology, with numerous applications. However, optical selectivity in the angular momentum of light has been quite limited, remaining constant by increasing the incident light power on previous passive optical devices. Here, we demonstrate a nonlinear boost of optical selectivity in both the spin and orbital angular momentum of light through near-field selective excitation of single-mode nanolasers. Our designed hybrid nanolaser circuits consist of plasmonic metasurfaces and individually placed perovskite nanowires, enabling subwavelength focusing of angular-momentum-distinctive plasmonic fields and further selective excitation of nanolasers in nanowires. The optically selected nanolaser with a nonlinear increase of light emission greatly enhances the baseline optical selectivity offered by the metasurface from about 0.4 up to near unity. Our demonstrated hybrid nanophotonic platform may find important applications in all-optical logic gates and nanowire networks, ultrafast optical switches, nanophotonic detectors, and on-chip optical and quantum information processing.
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Affiliation(s)
- Chenglin He
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Zilan Tang
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Liang Liu
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Stefan A Maier
- School of Physics and Astronomy, Faculty of Science, Monash University, Melbourne, Victoria 3800, Australia
- Department of Physics, Imperial College London, London SW7 2AZ, U.K
| | - Xiaoxia Wang
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Haoran Ren
- School of Physics and Astronomy, Faculty of Science, Monash University, Melbourne, Victoria 3800, Australia
| | - Anlian Pan
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
- School of Physics and Electronics, Hunan Normal University, Changsha 410081, P. R. China
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9
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Tian S, Wang Q, Liang S, Han Q, Zhang D, Huang Z, Ning J, Mei S, Xie W, Zhao H, Wu X, Wang J. High Q-Factor Single-Mode Lasing in Inorganic Perovskite Microcavities with Microfocusing Field Confinement. NANO LETTERS 2024; 24:1406-1414. [PMID: 38227806 DOI: 10.1021/acs.nanolett.3c04797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
The realization of high-Q single-mode lasing on the microscale is significant for the advancement of on-chip integrated light sources. It remains a challenging trade-off between Q-factor enhancement and light-field localization to raise the lasing emission rate. Here, we fabricated a zero-dimensional perovskite microcavity integrated with a nondamage pressed microlens to three-dimensionally tailor the intracavity light field and demonstrated linearly and nonlinearly (two-photon) pumped lasing by this microfocusing configuration. Notably, the microlensing microcavity experimentally achieves a high Q-factor (16700), high polarization (99.6%), and high Purcell factor (11.40) single-mode lasing under high-repetition pulse pumping. Three-dimensional light-field confinement formed by the microlens and plate microcavity simultaneously reduces the mode volume (∼3.66 μm3) and suppresses diffraction and transverse walk-off loss, which induces discretization on energy-momentum dispersions and spatial electromagnetic-field distributions. The Q factor and Purcell factor of our lasing come out on top among most of the reported perovskite microcavities, paving a promising avenue toward further studying electrically driven on-chip microlasers.
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Affiliation(s)
- Shuangshuang Tian
- Key Laboratory of Micro & Nano Photonic Structures, Shanghai Engineering Research Centre of Ultra Precision Optical Manufacturing, Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, 200433 Shanghai, China
| | - Qi Wang
- Key Laboratory of Micro & Nano Photonic Structures, Shanghai Engineering Research Centre of Ultra Precision Optical Manufacturing, Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, 200433 Shanghai, China
| | - Shuang Liang
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, 200241 Shanghai, China
| | - Qi Han
- School of Microelectronics, Fudan University, 200433 Shanghai, China
| | - Debao Zhang
- Key Laboratory of Micro & Nano Photonic Structures, Shanghai Engineering Research Centre of Ultra Precision Optical Manufacturing, Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, 200433 Shanghai, China
| | - Zhongmin Huang
- Key Laboratory of Micro & Nano Photonic Structures, Shanghai Engineering Research Centre of Ultra Precision Optical Manufacturing, Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, 200433 Shanghai, China
| | - Jiqiang Ning
- Key Laboratory of Micro & Nano Photonic Structures, Shanghai Engineering Research Centre of Ultra Precision Optical Manufacturing, Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, 200433 Shanghai, China
| | - Shiliang Mei
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, 200433 Shanghai, China
| | - Wei Xie
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, 200241 Shanghai, China
| | - Haibin Zhao
- Key Laboratory of Micro & Nano Photonic Structures, Shanghai Engineering Research Centre of Ultra Precision Optical Manufacturing, Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, 200433 Shanghai, China
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, 200433 Shanghai, China
| | - Xiang Wu
- Key Laboratory of Micro & Nano Photonic Structures, Shanghai Engineering Research Centre of Ultra Precision Optical Manufacturing, Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, 200433 Shanghai, China
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, 200433 Shanghai, China
| | - Jun Wang
- Key Laboratory of Micro & Nano Photonic Structures, Shanghai Engineering Research Centre of Ultra Precision Optical Manufacturing, Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, 200433 Shanghai, China
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University, 200433 Shanghai, China
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10
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Mao D, Chen L, Sun Z, Zhang M, Shi ZY, Hu Y, Zhang L, Wu J, Dong H, Xie W, Xu H. Observation of transition from superfluorescence to polariton condensation in CsPbBr 3 quantum dots film. LIGHT, SCIENCE & APPLICATIONS 2024; 13:34. [PMID: 38291038 PMCID: PMC10828401 DOI: 10.1038/s41377-024-01378-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Revised: 12/19/2023] [Accepted: 01/03/2024] [Indexed: 02/01/2024]
Abstract
The superfluorescence effect has received extensive attention due to the many-body physics of quantum correlation in dipole gas and the optical applications of ultrafast bright radiation field based on the cooperative quantum state. Here, we demonstrate not only to observe the superfluorescence effect but also to control the cooperative state of the excitons ensemble by externally applying a regulatory dimension of coupling light fields. A new quasi-particle called cooperative exciton-polariton is revealed in a light-matter hybrid structure of a perovskite quantum dot thin film spin-coated on a Distributed Bragg Reflector. Above the nonlinear threshold, polaritonic condensation occurs at a nonzero momentum state on the lower polariton branch owning to the vital role of the synchronized excitons. The phase transition from superfluorescence to polariton condensation exhibits typical signatures of a decrease of the linewidth, an increase of the macroscopic coherence as well as an accelerated radiation decay rate. These findings are promising for opening new potential applications for super-brightness and unconventional coherent light sources and could enable the exploitation of cooperative effects for quantum optics.
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Affiliation(s)
- Danqun Mao
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
| | - Linqi Chen
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800, Shanghai, China
| | - Zheng Sun
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China.
| | - Min Zhang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
| | - Zhe-Yu Shi
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
| | - Yongsheng Hu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
| | - Long Zhang
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800, Shanghai, China
| | - Jian Wu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing, 401121, China
- CAS Center for Excellence in Ultra-intense Laser Science, Shanghai, 201800, China
| | - Hongxing Dong
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800, Shanghai, China.
| | - Wei Xie
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China.
| | - Hongxing Xu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, Wuhan University, Wuhan, 430072, China
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11
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Wierzbowska M, Meléndez JJ. Exploring Epitaxial Structures for Electrically Pumped Perovskite Lasers: A Study of CsPb(Br,I) 3 Based on the Ab Initio Bethe-Salpeter Equation. MATERIALS (BASEL, SWITZERLAND) 2024; 17:427. [PMID: 38255596 PMCID: PMC11154405 DOI: 10.3390/ma17020427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Revised: 12/07/2023] [Accepted: 01/06/2024] [Indexed: 01/24/2024]
Abstract
Halide perovskites are widely used as components of electronic and optoelectronic devices such as solar cells, light-emitting diodes (LEDs), optically pumped lasers, field-effect transistors, photodetectors, and γ-detectors. Despite this wide range of applications, the construction of an electrically pumped perovskite laser remains challenging. In this paper, we numerically justify that mixing two perovskite compounds with different halide elements can lead to optical properties suitable for electrical pumping. As a reference, the chosen model material was CsPbBr3, whose performance as a part of lasers has been widely recognised, with some Br atoms substituted by I at specific sites. In particular, a strong enhancement of the low-energy absorption peaks has been obtained using the ab initio Bethe-Salpeter equation. Based on these results, we propose specific architectures of ordered doping that could be realised by epitaxial growth. Efficient light emission from the bottom of the conduction band is expected.
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Affiliation(s)
- Małgorzata Wierzbowska
- Institute of High Pressure Physics Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
| | - Juan J. Meléndez
- Department of Physics, University of Extremadura, Avda. de Elvas, s/n, 06006 Badajoz, Spain;
- Institute for Advanced Scientific Computing of Extremadura (ICCAEx), Avda. de Elvas, s/n, 06006 Badajoz, Spain
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12
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Huang S, Shen Z, Liao Y, Liu Z, Hu Z, Li Q, Zhang Z, Dong S, Luo J, Du J, Tang J, Leng Y. Water-Resistant Subwavelength Perovskite Lasing from Transparent Silica-Based Nanocavity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306102. [PMID: 37669761 DOI: 10.1002/adma.202306102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2023] [Revised: 08/05/2023] [Indexed: 09/07/2023]
Abstract
Great research efforts are devoted to exploring the miniaturization of chip-scale coherent light sources possessing excellent lasing performance. Despite the indispensable role in Si photonics, SiO2 is generally considered not contributing to the starting up and operation of integrated lasers. Here, this work demonstrates an extraordinary-performance subwavelength-scale perovskite vertical cavity laser with all-transparent SiO2 cavity, whose cavity is ultra-simple and composed of only two parallel SiO2 plates. By introducing a ligand-assisted thermally co-evaporation strategy, highly luminescent perovskite film with high reproducibility and excellent optical gain is grown directly on SiO2 . Benefitting from their high-refractive-index contrast, low-threshold, high-quality factor, and single-mode lasing is achieved in subwavelength range of ≈120 nm, and verified by long-range coherence distance (115.6 µm) and high linear polarization degree (82%). More importantly, the subwavelength perovskite laser device could operate in water for 20 days without any observable degradation, exhibiting ultra-stable water-resistant performance. These findings would provide a simple but robust and reliable strategy for the miniaturized on-chip lasers compatible with Si photonics.
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Affiliation(s)
- Sihao Huang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zixi Shen
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yang Liao
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Zhengzheng Liu
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiping Hu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Qian Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Zeyu Zhang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Siyu Dong
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiajun Luo
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Juan Du
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuxin Leng
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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13
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Wen K, Cao Y, Gu L, Wang S, Qian D, Wang J, Kuang Z, Luo M, Wang G, Guan S, Li M, Yang H, Xing G, Wang N, Zhu L, Peng Q, Huang W, Wang J. Continuous-Wave Lasing in Perovskite LEDs with an Integrated Distributed Feedback Resonator. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303144. [PMID: 37732391 DOI: 10.1002/adma.202303144] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Revised: 07/13/2023] [Indexed: 09/22/2023]
Abstract
Realization of electrically pumped laser diodes based on solution-processed semiconductors is a long-standing challenge. Metal halide perovskites have shown great potential toward this goal due to their excellent optoelectronic properties. Continuous-wave (CW) optically pumped lasing in a real electroluminescent device represents a key step to current-injection laser diodes, but it has not yet been realized. This is mainly due to the challenge of incorporating a resonant cavity into an efficient light-emitting diode (LED) able to sustain intensive carrier injection. Here, CW lasing is reported in an efficient perovskite LED with an integrated distributed feedback resonator, which shows a low lasing threshold of 220 W cm-2 at 110 K. Importantly, the LED works well at a current density of 330 A cm-2 , indicating the carrier injection rate already exceeds the threshold of optically pumping. The results suggest that electrically pumped perovskite laser diodes can be achieved once the Joule heating issue is overcome.
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Affiliation(s)
- Kaichuan Wen
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yu Cao
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
- Strait Institute of Flexible Electronics (SIFE Future Technologies), Fujian Normal University, Fuzhou, 350117, China
| | - Lianghui Gu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Saixue Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Dongmin Qian
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jingmin Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Zhiyuan Kuang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mengyi Luo
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Gang Wang
- Institute of Joint Key Laboratory of the Applied Physics and Materials Engineering, University of Macao, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Shuzhen Guan
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mengmeng Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Heng Yang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Guichuan Xing
- Institute of Joint Key Laboratory of the Applied Physics and Materials Engineering, University of Macao, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lin Zhu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Qiming Peng
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
- Changzhou University, 21 Middle Gehu Road, Changzhou, 213164, China
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14
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Yang H, Peng M, Yi W, Jiang H, Cheng GJ. Oriented Perovskite Film from Laser Recrystallization in Magnetic Field. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303635. [PMID: 37473433 DOI: 10.1002/adma.202303635] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Revised: 07/11/2023] [Accepted: 07/17/2023] [Indexed: 07/22/2023]
Abstract
The orientation of crystals on the substrate and the presence of defects are critical factors in electro-optic performance. However, technical approaches to guide the orientational crystallization of electro-optical thin films remain challenging. Here, a novel physical method called magnetic-field-assisted pulse laser annealing (MAPLA) for controlling the orientation of perovskite crystals on substrates is reported. By inducing laser recrystallization of perovskite crystals under a magnetic field and with magnetic nanoparticles, the optical and magnetic fields are found to guide the orientational gathering of perovskite units into nanoclusters, resulting in perovskite crystals with preferred lattice orientation in (110) and (220) perpendicular to the substrate. The perovskite crystals obtained by MAPLA exhibit significantly larger grain size and fewer defects compared to those from pulsed laser annealing (PLA) and traditional thermal annealing, resulting in improved carrier lifetime and mobility. Furthermore, MAPLA demonstrates enhanced device performance, increasing responsivity and detectivity by two times, and photocurrent by nearly three orders compared with PLA. The introduction of Fe2 O3 nanoparticles during MAPLA not only improves crystal size and orientation but also significantly enhances long-term stability by preventing Pb2+ reduction. The MAPLA method has great potential for fabricating many electro-optical thin films with desired device properties and stability.
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Affiliation(s)
- Huanrui Yang
- The Institute of Technological Sciences, Wuhan University, Wuhan, 430072, China
| | - Ming Peng
- The Institute of Technological Sciences, Wuhan University, Wuhan, 430072, China
| | - Wendi Yi
- The Institute of Technological Sciences, Wuhan University, Wuhan, 430072, China
| | - Haoqing Jiang
- Institute of Laser Manufacturing, Henan Academy of Sciences, Zhengzhou, Henan, 450046, China
| | - Gary J Cheng
- School of Industrial Engineering, Purdue University, West Lafayette, IN, 47907, USA
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15
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Zhou Y, Hu Y, Zhang W, Liu C. Amplified spontaneous emission from inclusions containing cesium lead bromide in glasses. OPTICS EXPRESS 2023; 31:27192-27202. [PMID: 37710799 DOI: 10.1364/oe.495694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2023] [Accepted: 07/17/2023] [Indexed: 09/16/2023]
Abstract
Cesium lead halide (CsPbX3, X = Cl, Br and I) perovskite nanocrystals embedded glasses exhibit good optical properties and have potential as gain media. However, origins of the amplified spontaneous emission (ASE) from CsPbX3 nanocrystals are controversial. Here, it is found that ASE is from CsPbX3 nanocrystals in inclusions instead of CsPbX3 nanocrystals dispersed in the glass matrix. Inclusions with various sizes are capable of generating ASE, and ASE of the inclusions can sustain at energy densities as high as several tens of mJ/cm2. Thresholds of the fs laser energy densities increase with the increase in fs laser wavelength, and high net optical gain coefficient is obtained.
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16
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Gunnarsson WB, Roh K, Zhao L, Murphy JP, Grede AJ, Giebink NC, Rand BP. Toward Nonepitaxial Laser Diodes. Chem Rev 2023. [PMID: 37219995 DOI: 10.1021/acs.chemrev.2c00721] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Thin-film organic, colloidal quantum dot, and metal halide perovskite semiconductors are all being pursued in the quest for a wavelength-tunable diode laser technology that does not require epitaxial growth on a traditional semiconductor substrate. Despite promising demonstrations of efficient light-emitting diodes and low-threshold optically pumped lasing in each case, there are still fundamental and practical barriers that must be overcome to reliably achieve injection lasing. This review outlines the historical development and recent advances of each material system on the path to a diode laser. Common challenges in resonator design, electrical injection, and heat dissipation are highlighted, as well as the different optical gain physics that make each system unique. The evidence to date suggests that continued progress for organic and colloidal quantum dot laser diodes will likely hinge on the development of new materials or indirect pumping schemes, while improvements in device architecture and film processing are most critical for perovskite lasers. In all cases, systematic progress will require methods that can quantify how close new devices get with respect to their electrical lasing thresholds. We conclude by discussing the current status of nonepitaxial laser diodes in the historical context of their epitaxial counterparts, which suggests that there is reason to be optimistic for the future.
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Affiliation(s)
- William B Gunnarsson
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Kwangdong Roh
- Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Lianfeng Zhao
- Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina 29634, United States
| | - John P Murphy
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Alex J Grede
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Noel C Giebink
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Barry P Rand
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States
- Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544, United States
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17
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Zou S, Zhao X, Lyu J, Ouyang W, Liu R, Xu S. Light Amplification in Fe-Doped CsPbBr 3 Crystal Microwire Excited by Continuous-Wave Laser. J Phys Chem Lett 2023; 14:4815-4821. [PMID: 37191350 DOI: 10.1021/acs.jpclett.3c00277] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Electrically pumped halide perovskite laser diodes remain unexplored, and it is widely acknowledged that continuous-wave (CW) lasing will be a crucial step. Here, we demonstrate room-temperature amplified spontaneous emission of Fe-doped CsPbBr3 crystal microwire excited by a CW laser. Temperature-dependent photoluminescence spectra indicate that the Fe dopant forms a shallow level trap states near the band edge of the lightly doped CsPbBr3 microcrystal. Pump intensity-dependent time-resolved PL spectra show that the introduced Fe dopant level makes the electron more stable in excited states, suitable for the population inversion. The emission peak intensity of the lightly Fe-doped microwire increases nonlinearly above a threshold of 12.3 kW/cm2 under CW laser excitation, indicating a significant light amplification. Under high excitation, the uniform crystal structure and surface outcoupling in Fe-doped perovskite crystal microwires enhanced the spontaneous emission. These results reveal the considerable promise of Fe-doped perovskite crystal microwires toward low-cost, high-performance, room-temperature electrical pumping perovskite lasers.
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Affiliation(s)
- Shuangyang Zou
- Key Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiaoan Zhao
- Key Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
- School of Engineering Science, University of Chinese Academy of Sciences, Beijing 100149, China
| | - Jing Lyu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Wenze Ouyang
- Key Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ruibin Liu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Shenghua Xu
- Key Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
- School of Engineering Science, University of Chinese Academy of Sciences, Beijing 100149, China
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18
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Tang H, Wang Y, Chen Y, Wang K, He X, Huang C, Xiao S, Yu S, Song Q. Ultrahigh-Q Lead Halide Perovskite Microlasers. NANO LETTERS 2023; 23:3418-3425. [PMID: 37042745 DOI: 10.1021/acs.nanolett.3c00463] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Lead halide perovskites have been promising platforms for micro- and nanolasers. However, the fragile nature of perovskites poses an extreme challenge to engineering a cavity boundary and achieving high-quality (Q) modes, severely hindering their practical applications. Here, we combine an etchless bound state in the continuum (BIC) and a chemically synthesized single-crystalline CsPbBr3 microplate to demonstrate on-chip integrated perovskite microlasers with ultrahigh Q factors. By pattering polymer microdisks on CsPbBr3 microplates, we show that record high-Q BIC modes can be formed by destructive interference between different in-plane radiation from whispering gallery modes. Consequently, a record high Q-factor of 1.04 × 105 was achieved in our experiment. The high repeatability and high controllability of such ultrahigh Q BIC microlasers have also been experimentally confirmed. This research provides a new paradigm for perovskite nanophotonics.
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Affiliation(s)
- Haijun Tang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Yuhan Wang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Yimu Chen
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Kaiyang Wang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Xianxiong He
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Can Huang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Shumin Xiao
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
- Pengcheng Laboratory, Shenzhen 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, Shanxi P. R. China
| | - Shaohua Yu
- Pengcheng Laboratory, Shenzhen 518055, P. R. China
| | - Qinghai Song
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
- Pengcheng Laboratory, Shenzhen 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, Shanxi P. R. China
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19
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Kayalvizhi T, Sathya A, Perumal S, Preethi Meher K. Structural, Optoelectronic and Electrochemical behavior of the mechanochemically synthesized CsPb1-xNaxBr3 (x=0 to 0.15). J SOLID STATE CHEM 2023. [DOI: 10.1016/j.jssc.2023.123997] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/31/2023]
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20
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Sun W, Yun R, Liu Y, Zhang X, Yuan M, Zhang L, Li X. Ligands in Lead Halide Perovskite Nanocrystals: From Synthesis to Optoelectronic Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205950. [PMID: 36515335 DOI: 10.1002/smll.202205950] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Revised: 11/13/2022] [Indexed: 06/17/2023]
Abstract
Ligands are indispensable for perovskite nanocrystals (NCs) throughout the whole lifetime, as they not only play key roles in the controllable synthesis of NCs with different sizes and shapes, but also act as capping shell that affects optical properties and electrical coupling of NCs. Establishing a systematic understanding of the relationship between ligands and perovskite NCs is significant to enable many potential applications of NCs. This review mainly focuses on the influence of ligands on perovskite NCs. First of all, the ligands-dominated size and shape control of NCs is discussed. Whereafter, the surface defects of NCs and the bonding between ligands and perovskite NCs are classified, and corresponding post-treatment of surface defects via ligands is also summarized. Furthermore, advances in engineering the ligands towards the high performance of optoelectronic devices based on perovskite NCs, including photodetector, solar cell, light emitting diode (LED), and laser, and finally to potential challenges are also discussed.
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Affiliation(s)
- Wenda Sun
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
| | - Rui Yun
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
| | - Yuling Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
| | - Xiaodan Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
| | - Mingjian Yuan
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin, 300071, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300071, China
| | - Libing Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic, Department of Chemistry, Tianjin University, Tianjin, 300072, China
| | - Xiyan Li
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
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21
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Zhang Z, Song F, Li Z, Gao YF, Sun YJ, Lou WK, Liu X, Zhang Q, Tan PH, Chang K, Zhang J. Double-Cavity Modulation of Exciton Polaritons in CsPbBr 3 Microwire. NANO LETTERS 2022; 22:9365-9371. [PMID: 36399405 DOI: 10.1021/acs.nanolett.2c03147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The lead halide perovskite has become a promising candidate for the study of exciton polaritons due to their excellent optical properties. Here, both experimental and simulated results confirm the existence of two kinds of Fabry-Pérot microcavities in a single CsPbBr3 microwire with an isosceles right triangle cross section, and we experimentally demonstrate that confined photons in a straight and a folded Fabry-Pérot microcavity are strongly coupled with excitons to form exciton polaritons. Furthermore, we reveal the polarization characteristic and double-cavity modulation of exciton polaritons emission by polarization-resolved fluorescence spectroscopy. Our results not only prove that the modulation of exciton polaritons emission can occur in this simple double-cavity system but also provide a possibility to develop related polariton devices.
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Affiliation(s)
- Zhe Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Feilong Song
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
| | - Zhenyao Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuan-Fei Gao
- Beijing Academy of Quantum Information Science, Beijing 100193, China
| | - Yu-Jia Sun
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wen-Kai Lou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center For Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Qing Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kai Chang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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22
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Silica-coated CsPbBr3 nanocrystals with high stability for bright white-emitting displays. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123724] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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23
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Lin Z, Huang R, Li S, Liu S, Song J, Panmai M, Lan S. Ultralow Threshold Lasing from a Continuous-Wave-Pumped SiN x/CsPbBr 3/Ag Thin Film Mediated by the Whispering Gallery Modes of a SiO 2 Microsphere. J Phys Chem Lett 2022; 13:9967-9974. [PMID: 36260874 DOI: 10.1021/acs.jpclett.2c02605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Thin-film pervoskite lasers driven by a continuous wave (CW) laser with ultralow thresholds, which is crucial for the development of on-chip electrically driven lasers, have not yet been realized owing to the low excitation power density of the CW laser. Here, we reported the CW-laser-pumped lasing from a thin film of CsPbBr3 quantum dots (QDs) sandwiched by a SiNx and a Ag thin film and mediated by the whispering gallery modes of a SiO2 microsphere. The stable photoluminescence from CsPbBr3 QDs with a quantum efficiency of ∼45% is realized by encapsulating with a thin SiNx film. Upon CW-laser pumping, lasing from the whispering gallery modes with a threshold of ∼11.6 W/cm2 is successfully demonstrated at room temperature. The strong localization of electric field achieved in the particle-on-film system, which is revealed in the numerical simulations and lifetime measurements, plays a crucial role in the realization of the ultralow threshold lasing. Our findings open a new avenue for designing photostable CW-laser-pumped pervoskite lasers.
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Affiliation(s)
- Zhenxu Lin
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou510006, China
| | - Rui Huang
- School of Material Science and Engineering, Hanshan Normal University, Chaozhou521041, China
| | - Shulei Li
- School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou510665, China
| | - Shimei Liu
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou510006, China
| | - Jie Song
- School of Material Science and Engineering, Hanshan Normal University, Chaozhou521041, China
| | - Mingcheng Panmai
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou510006, China
| | - Sheng Lan
- Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou510006, China
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24
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Zhu H, Šverko T, Zhang J, Berkinsky DB, Sun W, Krajewska CJ, Bawendi MG. One-Dimensional Highly-Confined CsPbBr 3 Nanorods with Enhanced Stability: Synthesis and Spectroscopy. NANO LETTERS 2022; 22:8355-8362. [PMID: 36223648 DOI: 10.1021/acs.nanolett.2c03458] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
One-dimensional (1D) colloidal lead halide perovskites (LHPs) have potential as quantum emitters. Their study, however, has been hampered by their previous instability, leaving a gap in our understanding of structure-property relationships in colloidal LHPs with anisotropic shapes. Here, we synthesize stable, highly-confined 1D CsPbBr3 nanorods (NRs) and demonstrate their structural details and photoluminescence (PL) properties at both the ensemble and single particle levels. Using amino-terminated copolymers, we are able to stabilize and characterize 1D CsPbBr3 NRs utilizing transmission electron microscopy (TEM) and small angle scattering (SAS). Scanning transmission electron microscopy reveals that these NRs possess structural defects, including twists and inhomogeneity. Solution-phase photon correlation spectroscopy shows low biexciton-to-exciton quantum yield ratios (QYBX/QYX) and broad spectral line widths dominated by homogeneous broadening.
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Affiliation(s)
- Hua Zhu
- Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Tara Šverko
- Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Juanye Zhang
- Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - David B Berkinsky
- Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Weiwei Sun
- Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Chantalle J Krajewska
- Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Moungi G Bawendi
- Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
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25
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Zou S, Zhao X, Ouyang W, Xu S. Microfluidic Synthesis, Doping Strategy, and Optoelectronic Applications of Nanostructured Halide Perovskite Materials. MICROMACHINES 2022; 13:1647. [PMID: 36296000 PMCID: PMC9610495 DOI: 10.3390/mi13101647] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/14/2022] [Revised: 09/22/2022] [Accepted: 09/27/2022] [Indexed: 06/16/2023]
Abstract
Halide perovskites are increasingly exploited as semiconducting materials in diverse optoelectronic applications, including light emitters, photodetectors, and solar cells. The halide perovskite can be easily processed in solution, making microfluidic synthesis possible. This review introduces perovskite nanostructures based on micron fluidic channels in chemical reactions. We also briefly discuss and summarize several advantages of microfluidics, recent progress of doping strategies, and optoelectronic applications of light-sensitive nanostructured perovskite materials. The perspective of microfluidic synthesis of halide perovskite on optoelectronic applications and possible challenges are presented.
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Affiliation(s)
- Shuangyang Zou
- Key Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiaoan Zhao
- Key Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
- School of Engineering Science, University of Chinese Academy of Sciences, Beijing 100149, China
| | - Wenze Ouyang
- Key Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shenghua Xu
- Key Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
- School of Engineering Science, University of Chinese Academy of Sciences, Beijing 100149, China
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26
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Wang S, Dyksik M, Lampe C, Gramlich M, Maude DK, Baranowski M, Urban AS, Plochocka P, Surrente A. Thickness-Dependent Dark-Bright Exciton Splitting and Phonon Bottleneck in CsPbBr 3-Based Nanoplatelets Revealed via Magneto-Optical Spectroscopy. NANO LETTERS 2022; 22:7011-7019. [PMID: 36036573 PMCID: PMC9479212 DOI: 10.1021/acs.nanolett.2c01826] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2022] [Revised: 08/20/2022] [Indexed: 05/06/2023]
Abstract
The optimized exploitation of perovskite nanocrystals and nanoplatelets as highly efficient light sources requires a detailed understanding of the energy spacing within the exciton manifold. Dark exciton states are particularly relevant because they represent a channel that reduces radiative efficiency. Here, we apply large in-plane magnetic fields to brighten optically inactive states of CsPbBr3-based nanoplatelets for the first time. This approach allows us to access the dark states and directly determine the dark-bright splitting, which reaches 22 meV for the thinnest nanoplatelets. The splitting is significantly less for thicker nanoplatelets due to reduced exciton confinement. Additionally, the form of the magneto-PL spectrum suggests that dark and bright state populations are nonthermalized, which is indicative of a phonon bottleneck in the exciton relaxation process.
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Affiliation(s)
- Shuli Wang
- Laboratoire
National des Champs Magnétiques Intenses, EMFL, CNRS UPR 3228,
Université Grenoble Alpes, Université
Toulouse, Université Toulouse 3, INSA-T, 38042 Grenoble
and 31400 Toulouse, France
| | - Mateusz Dyksik
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
| | - Carola Lampe
- Nanospectroscopy
Group and Center for Nanoscience (CeNS), Nano-Institute Munich, Department
of Physics, Ludwig-Maximilians-Universität
München (LMU), Munich 80539 Germany
| | - Moritz Gramlich
- Nanospectroscopy
Group and Center for Nanoscience (CeNS), Nano-Institute Munich, Department
of Physics, Ludwig-Maximilians-Universität
München (LMU), Munich 80539 Germany
| | - Duncan K. Maude
- Laboratoire
National des Champs Magnétiques Intenses, EMFL, CNRS UPR 3228,
Université Grenoble Alpes, Université
Toulouse, Université Toulouse 3, INSA-T, 38042 Grenoble
and 31400 Toulouse, France
| | - Michał Baranowski
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
| | - Alexander S. Urban
- Nanospectroscopy
Group and Center for Nanoscience (CeNS), Nano-Institute Munich, Department
of Physics, Ludwig-Maximilians-Universität
München (LMU), Munich 80539 Germany
| | - Paulina Plochocka
- Laboratoire
National des Champs Magnétiques Intenses, EMFL, CNRS UPR 3228,
Université Grenoble Alpes, Université
Toulouse, Université Toulouse 3, INSA-T, 38042 Grenoble
and 31400 Toulouse, France
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
| | - Alessandro Surrente
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland
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27
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Bouich A, Marí-Guaita J, Baig F, Hameed Khattak Y, Soucase BM, Palacios P. Investigation of the Surface Coating, Humidity Degradation, and Recovery of Perovskite Film Phase for Solar-Cell Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3027. [PMID: 36080064 PMCID: PMC9457585 DOI: 10.3390/nano12173027] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2022] [Revised: 08/28/2022] [Accepted: 08/29/2022] [Indexed: 05/13/2023]
Abstract
Presently, we inquire about the organic/inorganic cation effect on different properties based on structure, morphology, and steadiness in preparing a one-step solution of APbI3 thin films, where A = MA, FA, Cs, using spin coating. This study was conducted to understand those properties well by incorporating device modeling using SCAPS-1D software and to upgrade their chemical composition. X-ray diffraction (XRD) was used to analyze the crystal structures. Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were conducted to characterize the surface morphology; photoluminescence, Transmission Electron Microscopy (TEM), and a UV-Visible spectrometer helped us to study the optical properties. The (110) plane is where we found the perovskite's crystalline structure. According to the XRD results and by changing the type of cation, we influence stabilization and the growth of the APbI3 absorber layer. Hither, a homogenous, smooth-surfaced, pinhole-free perovskite film and large grain size are results from the cesium cation. For the different cations, the band gap's range, revealed by the optical analysis, is from 1.4 to 1.8 eV. Moreover, the stability of CsPbI3 remains excellent for two weeks and in a ~60% humid environment. Based on the UV-Visible spectrometer and photoluminescence characterization, a numerical analysis for fabricated samples was also performed for stability analysis by modeling standard solar-cell structures HTL/APbI3/ETL. Modeling findings are in good agreement with experimental results that CsPbI3 is more stable, showing a loss % in PCE of 14.28%, which is smaller in comparison to FAPbI3 (44.46%) and MAPbI3 (20.24%).
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Affiliation(s)
- Amal Bouich
- Escuela Técnica Superior de Ingeniería del Diseño, Universitat Politècnica de València, 46022 València, Spain
- Instituto de Energía Solar, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, s/n, 28040 Madrid, Spain
- Department Física Aplicada a las Ingenierías Aeronáutica y Naval, ETSI Aeronáutica y del Espacio, Universidad Politécnica de Madrid, Pz. Cardenal Cisneros, 3, 28040 Madrid, Spain
| | - Julia Marí-Guaita
- Escuela Técnica Superior de Ingeniería del Diseño, Universitat Politècnica de València, 46022 València, Spain
| | - Faisal Baig
- Escuela Técnica Superior de Ingeniería del Diseño, Universitat Politècnica de València, 46022 València, Spain
- Electrical Engineering Department, Federal Urdu University of Arts, Sciences and Technology, Islamabad 44000, Pakistan
| | - Yousaf Hameed Khattak
- Escuela Técnica Superior de Ingeniería del Diseño, Universitat Politècnica de València, 46022 València, Spain
- Electrical Engineering Department, Federal Urdu University of Arts, Sciences and Technology, Islamabad 44000, Pakistan
| | - Bernabé Marí Soucase
- Escuela Técnica Superior de Ingeniería del Diseño, Universitat Politècnica de València, 46022 València, Spain
| | - Pablo Palacios
- Instituto de Energía Solar, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, s/n, 28040 Madrid, Spain
- Department Física Aplicada a las Ingenierías Aeronáutica y Naval, ETSI Aeronáutica y del Espacio, Universidad Politécnica de Madrid, Pz. Cardenal Cisneros, 3, 28040 Madrid, Spain
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28
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Tang Y, Zhang Y, Cao F, Sui Y, Cheng X, Shi L, Jiang T. Ultrafast resonant exciton-plasmon coupling for enhanced emission in lead halide perovskite with metallic Ag nanostructures. OPTICS LETTERS 2022; 47:3916-3919. [PMID: 35913347 DOI: 10.1364/ol.461926] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2022] [Accepted: 07/10/2022] [Indexed: 06/15/2023]
Abstract
Integrating metal halide perovskites onto plasmonic nanostructures has recently become a trending method of enabling superior emissive performance of perovskite nanophotonic devices. In this work, we present an in-depth study on the spontaneous emission properties of hybrid systems comprising CsPbBr3 nanocrystals and silver nanostructures. Specifically, a 5.7-fold increment of the photoluminescence (PL) intensity and a 1.65-fold enhancement of the PL relaxation rate is attained when the transition energy of CsPbBr3 is spectrally resonant with the oscillational frequency of Ag nanodisks (NDs), which is attributed to the intense exciton-plasmon coupling-induced Purcell effect. Furthermore, a 540-fs ultrafast energy transfer from the CsPbBr3 excitons to Ag plasmons is revealed by femtosecond pump-probe experiments, suggesting the key mechanism responsible for the Purcell-enhanced radiative emission. Our finding offers a unique understanding of the enhanced emissive behavior in the plasmon-coupled perovskite system and paves the way for further applications.
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29
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Milanese S, De Giorgi ML, Cerdán L, La-Placa MG, Jamaludin NF, Bruno A, Bolink HJ, Kovalenko MV, Anni M. Amplified Spontaneous Emission Threshold Dependence on Determination Method in Dye-Doped Polymer and Lead Halide Perovskite Waveguides. Molecules 2022; 27:4261. [PMID: 35807506 PMCID: PMC9268657 DOI: 10.3390/molecules27134261] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Revised: 06/27/2022] [Accepted: 06/29/2022] [Indexed: 02/04/2023] Open
Abstract
Nowadays, the search for novel active materials for laser devices is proceeding faster and faster thanks to the development of innovative materials able to combine excellent stimulated emission properties with low-cost synthesis and processing techniques. In this context, amplified spontaneous emission (ASE) properties are typically investigated to characterize the potentiality of a novel material for lasers, and a low ASE threshold is used as the key parameter to select the best candidate. However, several different methods are currently used to define the ASE threshold, hindering meaningful comparisons among various materials. In this work, we quantitatively investigate the ASE threshold dependence on the method used to determine it in thin films of dye-polymer blends and lead halide perovskites. We observe a systematic ASE threshold dependence on the method for all the different tested materials, and demonstrate that the best method choice depends on the kind of information one wants to extract. In particular, the methods that provide the lowest ASE threshold values are able to detect the excitation regime of early-stage ASE, whereas methods that are mostly spread in the literature return higher thresholds, detecting the excitation regime in which ASE becomes the dominant process in the sample emission. Finally, we propose a standard procedure to properly characterize the ASE threshold, in order to allow comparisons between different materials.
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Affiliation(s)
- Stefania Milanese
- Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via per Arnesano, 73100 Lecce, Italy; (M.L.D.G.); (M.A.)
| | - Maria Luisa De Giorgi
- Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via per Arnesano, 73100 Lecce, Italy; (M.L.D.G.); (M.A.)
| | - Luis Cerdán
- Instituto de Ciencia Molecular, Universidad de Valencia, 46980 Paterna, Spain; (L.C.); (M.-G.L.-P.); (H.J.B.)
| | - Maria-Grazia La-Placa
- Instituto de Ciencia Molecular, Universidad de Valencia, 46980 Paterna, Spain; (L.C.); (M.-G.L.-P.); (H.J.B.)
| | - Nur Fadilah Jamaludin
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, Singapore 637553, Singapore; (N.F.J.); (A.B.)
| | - Annalisa Bruno
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, Singapore 637553, Singapore; (N.F.J.); (A.B.)
| | - Henk J. Bolink
- Instituto de Ciencia Molecular, Universidad de Valencia, 46980 Paterna, Spain; (L.C.); (M.-G.L.-P.); (H.J.B.)
| | - Maksym V. Kovalenko
- Department of Chemistry and Applied Biosciences, Institute of Inorganic Chemistry, ETH Zürich, CH-8093 Zürich, Switzerland;
- Laboratory for Thin Films and Photovoltaics, Empa—Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Marco Anni
- Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via per Arnesano, 73100 Lecce, Italy; (M.L.D.G.); (M.A.)
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30
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Yang L, Li Y, Zhang W, Liu Y, Cao J, Cao Y, Bao J, Wang Z, Wang L, Huang X. Promoting optoelectronic properties of Cs 2AgBiBr 6 nanocrystals by formation of heterostructures with BiOCl nanosheets. Chem Commun (Camb) 2022; 58:7765-7768. [PMID: 35730725 DOI: 10.1039/d2cc01684b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Lead halide perovskite nanocrystals and their heterostructures have achieved substantial advances in optoelectronics; however, their inherent material instability and lead toxicity have driven research on alternative material systems. Herein, solution-processable heterostructures composed of lead-free double perovskite Cs2AgBiBr6 nanocrystals and BiOCl nanosheets were prepared through a colloidal synthesis method. Defect states were present in BiOCl and benefited carrier generation, recombination and transport in Cs2AgBiBr6. As a result, the light emission of the Cs2AgBiBr6 nanocrystals was greatly enhanced at low temperatures, and the photodetector based on the Cs2AgBiBr6/BiOCl heterostructure exhibited a much improved on-off ratio compared to the device based on Cs2AgBiBr6 alone. Our work highlights the complex nature and impact of two-dimensional heterostructure assembly on the optoelectronic properties of lead-free double perovskites and demonstrates their great potential toward environmentally friendly optoelectronic devices.
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Affiliation(s)
- Lei Yang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
| | - Yuping Li
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
| | - Wei Zhang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
| | - Yanlei Liu
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
| | - Jiacheng Cao
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China.
| | - Yang Cao
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
| | - Jusheng Bao
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
| | - Zhiwei Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China. .,Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China.
| | - Lin Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
| | - Xiao Huang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
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31
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Ge S, Huang LB, Pan C. Halide perovskite single crystals for resistive switching. Sci Bull (Beijing) 2022; 67:1018-1021. [PMID: 36546244 DOI: 10.1016/j.scib.2022.02.001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Affiliation(s)
- Shuaipeng Ge
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
| | - Long-Biao Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Caofeng Pan
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
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32
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Du W, Wu X, Zhang S, Sui X, Jiang C, Zhu Z, Shang Q, Shi J, Yue S, Zhang Q, Zhang J, Liu X. All Optical Switching through Anistropic Gain of CsPbBr 3 Single Crystal Microplatelet. NANO LETTERS 2022; 22:4049-4057. [PMID: 35522976 DOI: 10.1021/acs.nanolett.2c00712] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Perovskite micro/nanostructures have recently emerged as a highly attractive gain material for nanolasers. To explore their applications and further improve performance, it is essential to understand the optical gain and the anisotropic properties. Herein, we obtained high quality CsPbBr3 microplatelets (MP) with anisotropic orthorhombic phase. Optical gain of CsPbBr3 single crystal MP was investigated via microscale variable stripe-length measurement. A polarization-dependent optical gain was observed, and the gain along [002] was larger than that of [1-10]. The behavior was attributed to the lowest energy transition dipole moment of [002] induced by the smaller deviation of Br-Pb-Br bond from the perfect lattice. Along the [002] direction, we obtained the optical gain value up to 5077 cm-1, which is the record value ever reported. Moreover, all optical switching of lasing is realized by periodical polarized excitation. Our results provide new perceptions in the design of novel functional anisotropic devices based on perovskite micro/nanostructures.
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Affiliation(s)
- Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xianxin Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shuai Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinyu Sui
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chuanxiu Jiang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhuoya Zhu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiuyu Shang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qing Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, & Center of Materials Science and Optoelectronics Engineering, Chinese Academy of Sciences, Beijing 100083, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Dalian National Laboratory for Clean Energy, Dalian 116023, China
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33
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Zhao F, Ren A, Li P, Li Y, Wu J, Wang ZM. Toward Continuous-Wave Pumped Metal Halide Perovskite Lasers: Strategies and Challenges. ACS NANO 2022; 16:7116-7143. [PMID: 35511058 DOI: 10.1021/acsnano.1c11539] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Reliable and efficient continuous-wave (CW) lasers have been intensively pursued in the field of optoelectronic integrated circuits. Metal perovskites have emerged as promising gain materials for solution-processed laser diodes. Recently, the performance of CW perovskite lasers has been improved with the optimization of material and device levels. Nevertheless, the realization of CW pumped perovskite lasers is still hampered by thermal runaway, unwanted parasitic species, and poor long-term stability. This review starts with the charge carrier recombination dynamics and fundamentals of CW lasing in perovskites. We examine the potential strategies that can be used to improve the performance of perovskite CW lasers from the materials to device levels. We also propose the open challenges and future opportunities in developing high-performance and stable CW pumped perovskite lasers.
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Affiliation(s)
- Feiyun Zhao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Aobo Ren
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Peihang Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Yan Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
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34
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Zhang L, Zhang J, Shang Q, Song J, Li C, Du W, Chen S, Liu X, Zou B, Gao P, Zhang Q. Ultrafast Antisolvent Growth of Single-Crystalline CsPbCl 3 Microcavity for Low-Threshold Room Temperature Blue Lasing. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21356-21362. [PMID: 35471822 DOI: 10.1021/acsami.2c02811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
All-inorganic perovskite CsPbCl3 has recently attracted considerable attention due to its great potentials for the development of high-efficiency, deep-blue optoelectronic devices. Particularly, single-crystalline CsPbCl3 planar microstructures provide good platforms for both fundamental studies and nanophotonics applications from lasers and detectors to amplifiers. In this study, we report an ultrafast antisolvent deposition route to fabricate single-crystalline CsPbCl3 microplatelets (MPs). The as-grown MPs exhibit uniform morphology, strong emission, and outstanding gain property. Room temperature photoluminescence lasing is realized at 428 nm with a low threshold of 11.5 μJ cm-2 and high net optical gain up to 720 cm-1. These findings advance fundamental understanding on the fabrication and optoelectronic applications of low-dimensional CsPbCl3 perovskite structures.
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Affiliation(s)
- Li Zhang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jinshuai Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Qiuyu Shang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jiepeng Song
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Chun Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center of Excellence for Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Shulin Chen
- Electron Microscopy Laboratory School of Physics, Peking University, Beijing 100871, P. R. China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center of Excellence for Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Bingsuo Zou
- Guangxi Key Lab of Processing for Nonferrous Metals and Featured Materials and School of Resources, Environments and Materials, Guangxi University, Nanning 530004, P. R. China
| | - Peng Gao
- Electron Microscopy Laboratory School of Physics, Peking University, Beijing 100871, P. R. China
- Electron Microscopy Laboratory, International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, P. R. China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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35
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Peng B, Zhou H, Liu Z, Li Y, Shang Q, Xie J, Deng L, Zhang Q, Liang D. Pattern-Selective Molecular Epitaxial Growth of Single-Crystalline Perovskite Arrays toward Ultrasensitive and Ultrafast Photodetector. NANO LETTERS 2022; 22:2948-2955. [PMID: 35289627 DOI: 10.1021/acs.nanolett.2c00074] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The emergence of organic-inorganic perovskite has provided great flexibility for creating optoelectronic devices with unprecedented performance or unique functionality. However, the perovskite films explored so far have been difficult to be patterned to arrays owing to their poor solvent and moisture stability, which usually lead to serious structural damage of perovskites. The successful preparation of perovskite microarrays with uniform shape and size is more challenging. Here we report a straightforward approach to realize single-crystalline perovskite arrays through a relatively simple pattern-selective molecular epitaxial growth. This approach is applied to create diverse shaped perovskite arrays, such as hexagon, triangle, circle, square, and rectangle. A vertically aligned perovskite photodetector displays both an ultrasensitive and ultrafast photoresponse arising from the reduction in carrier diffusion paths and the high optical absorption. This work demonstrates a general approach to creating perovskite arrays with uniform shape, size, and morphology and provides a rich platform for producing high-performance photodetectors and photovoltage devices.
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Affiliation(s)
- Bo Peng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Hongmei Zhou
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zhen Liu
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yue Li
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qiuyu Shang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jianliang Xie
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Longjiang Deng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Difei Liang
- National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
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36
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Cheng R, Liang ZB, Shen H, Guo J, Wang CF, Chen S. In-situ synthesis of stable perovskite quantum dots in core-shell nanofibers via microfluidic electrospinning. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2022.03.107] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
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37
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Li M, Zhao Y, Qin X, Ma Q, Lu J, Lin K, Xu P, Li Y, Feng W, Zhang WH, Wei Z. Conductive Phosphine Oxide Passivator Enables Efficient Perovskite Light-Emitting Diodes. NANO LETTERS 2022; 22:2490-2496. [PMID: 35263112 DOI: 10.1021/acs.nanolett.2c00276] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Recently, surface passivation has been proved to be an essential approach for obtaining efficient and stable perovskite light-emitting diodes (Pero-LEDs). Phosphine oxides performed well as passivators in many reports. However, the most commonly used phosphine oxides are insulators, which may inhibit carrier transport between the perovskite emitter and charge-transporter layers, limiting the corresponding device performance. Here, 2,7-bis(diphenylphosphoryl)-9,9'-spirobifluorene (SPPO13), a conductive molecule with two phosphine oxide functional groups, is introduced to modify the perovskite emitting layer. The bifunctional SPPO13 can passivate the nonradiative defects of perovskite and promote electron injection at the interface of perovskite emitter and electron-transporter layers. As a result, the corresponding Pero-LEDs obtain a maximum external quantum efficiency (EQE) of 22.3%. In addition, the Pero-LEDs achieve extremely high brightness with a maximum of around 190 000 cd/m2.
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Affiliation(s)
- Mingliang Li
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu 610200, China
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Yaping Zhao
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Xiangqian Qin
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Qingshan Ma
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu 610200, China
| | - Jianxun Lu
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Kebin Lin
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Peng Xu
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Yuqing Li
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Wengjing Feng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Wen-Hua Zhang
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu 610200, China
- School of Materials and Energy, Yunnan University, Kunming 650050, China
| | - Zhanhua Wei
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen 361005, China
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38
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Wang C, Dai G, Wang J, Cui M, Yang Y, Yang S, Qin C, Chang S, Wu K, Liu Y, Zhong H. Low-Threshold Blue Quasi-2D Perovskite Laser through Domain Distribution Control. NANO LETTERS 2022; 22:1338-1344. [PMID: 35049298 DOI: 10.1021/acs.nanolett.1c04666] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quasi-2D perovskites, composed of self-organized quantum well structures, are emerging as gain materials for laser applications. Here we investigate the influence of domain distribution on the laser emission of CsPbCl1.5Br1.5-based quasi-2D perovskites. The use of 2,2-diphenylethylammonium bromide (DPEABr) as a ligand enables the formation of quasi-2D film with a large-n-dominated narrow domain distribution. Due to the reduced content of small-n domains, the incomplete energy transfer from small-n to large-n domains can be greatly addressed. Moreover, the photoinduced carriers can be concentrated on most of the large-n domains to reduce the local carrier density, thereby suppressing the Auger recombination. By controlling the domain distribution, we achieve blue amplified spontaneous emission and single-mode vertical-cavity surface-emitting lasing with low thresholds of 6.5 and 9.2 μJ cm-2, respectively. This work provides a guideline to design the domain distribution to realize low-threshold multicolor perovskite lasers.
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Affiliation(s)
- Chenhui Wang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Guang Dai
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- School of Science, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Junhui Wang
- State Key Laboratory of Molecular Reaction Dynamics and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Minghuan Cui
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Yingguo Yang
- Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People's Republic of China
| | - Sirui Yang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Chaochao Qin
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Shuai Chang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Kaifeng Wu
- State Key Laboratory of Molecular Reaction Dynamics and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Yufang Liu
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Haizheng Zhong
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
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39
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Polishchuk S, Puppin M, Crepaldi A, Gatti G, Dirin DN, Nazarenko O, Colonna N, Marzari N, Kovalenko MV, Grioni M, Chergui M. Nanoscale-Resolved Surface-to-Bulk Electron Transport in CsPbBr 3 Perovskite. NANO LETTERS 2022; 22:1067-1074. [PMID: 35044784 PMCID: PMC8832496 DOI: 10.1021/acs.nanolett.1c03941] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Revised: 01/02/2022] [Indexed: 06/14/2023]
Abstract
Describing the nanoscale charge carrier transport at surfaces and interfaces is fundamental for designing high-performance optoelectronic devices. To achieve this, we employ time- and angle-resolved photoelectron spectroscopy with ultraviolet pump and extreme ultraviolet probe pulses. The resulting high surface sensitivity reveals an ultrafast carrier population decay associated with surface-to-bulk transport, which was tracked with a sub-nanometer spatial resolution normal to the surface, and on a femtosecond time scale, in the case of the inorganic CsPbBr3 lead halide perovskite. The decay time exhibits a pronounced carrier density dependence, which is attributed via modeling to enhanced diffusive transport and concurrent recombination. The transport is found to approach an ordinary diffusive regime, limited by electron-hole scattering, at the highest excitation fluences. This approach constitutes an important milestone in our capability to probe hot-carrier transport at solid interfaces with sub-nanometer resolution in a theoretically and experimentally challenging, yet technologically relevant, high-carrier-density regime.
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Affiliation(s)
- Serhii Polishchuk
- Laboratoire
de Spectroscopie Ultrarapide (LSU) and Lausanne Centre for Ultrafast
Science (LACUS), École Polytechnique
Fédérale de Lausanne, ISIC, 1015 Lausanne, Switzerland
| | - Michele Puppin
- Laboratoire
de Spectroscopie Ultrarapide (LSU) and Lausanne Centre for Ultrafast
Science (LACUS), École Polytechnique
Fédérale de Lausanne, ISIC, 1015 Lausanne, Switzerland
| | - Alberto Crepaldi
- Institute
of Physics and Lausanne Centre for Ultrafast Science (LACUS), École Polytechnique Fédérale
de Lausanne, 1015 Lausanne, Switzerland
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milan 20133, Italy
| | - Gianmarco Gatti
- Institute
of Physics and Lausanne Centre for Ultrafast Science (LACUS), École Polytechnique Fédérale
de Lausanne, 1015 Lausanne, Switzerland
| | - Dmitry N. Dirin
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir-Prelog Weg 1, 8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, EMPA−Swiss
Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland
| | - Olga Nazarenko
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir-Prelog Weg 1, 8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, EMPA−Swiss
Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland
| | - Nicola Colonna
- Laboratory
for Neutron Scattering and Imaging, Paul
Scherrer Institute, 5232 Villigen-PSI, Switzerland
- National
Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale
de Lausanne, 1015 Lausanne, Switzerland
| | - Nicola Marzari
- National
Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale
de Lausanne, 1015 Lausanne, Switzerland
| | - Maksym V. Kovalenko
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir-Prelog Weg 1, 8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, EMPA−Swiss
Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland
| | - Marco Grioni
- Institute
of Physics and Lausanne Centre for Ultrafast Science (LACUS), École Polytechnique Fédérale
de Lausanne, 1015 Lausanne, Switzerland
| | - Majed Chergui
- Laboratoire
de Spectroscopie Ultrarapide (LSU) and Lausanne Centre for Ultrafast
Science (LACUS), École Polytechnique
Fédérale de Lausanne, ISIC, 1015 Lausanne, Switzerland
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40
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Bai X, Meng L, Zhou N, Zheng J, Yu XF, Chu PK, Xiao JJ, Zou B, Li J. In situ preparation of Mn-doped perovskite nanocrystalline films and application to white light emitting devices. J Colloid Interface Sci 2022; 606:1163-1169. [PMID: 34487935 DOI: 10.1016/j.jcis.2021.08.068] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2021] [Revised: 08/08/2021] [Accepted: 08/09/2021] [Indexed: 11/30/2022]
Abstract
Mn-doped perovskite nanocrystals have promised new optoelectronic applications due to their unique material properties. In the present study, Mn-doped perovskite nanocrystalline films were prepared in situ in a polymer matrix. The Mn-doped perovskite nanocrystals (PNCs) had good crystallinity and uniform size/spatial distributions in the polymer film. Bright dual-color emission and the long lifetime of the excited state of the dopant were observed from the host exciton and the Mn2+ dopant, respectively. Furthermore, magnetism was observed in the optimal Mn2+ concentration, implying that magnetic coupling was achieved in the Mn-doped perovskite lattice. The Mn-doped perovskite films also showed superior stability against moisture. To demonstrate the practicality of this composite film, a white light emitting device was fabricated by combining a single composite film with a blue light emitting diode; the device showed a high-quality white light emission, and the Commission Internationale De L'Eclairage (CIE) chromaticity coordinate of the white light emitting diode (WLED) (0.361, 0.326) was close to the optimal white color index. In this single-layer WLED, self-absorption among the luminous multilayers in traditional white light emitting diodes can be avoided. The study findings revealed that Mn-doped perovskite nanocrystalline films have many exciting properties, which bodes well for the fundamental study and design of high-performance optoelectronic devices.
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Affiliation(s)
- Xianwei Bai
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Lingqiang Meng
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Ni Zhou
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Jinju Zheng
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, China
| | - Xue-Feng Yu
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Jun-Jun Xiao
- College of Electronic and Information Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Bingsuo Zou
- Center on Nano-energy Research, School of Physical Science and Technology, and Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China.
| | - Jia Li
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China.
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41
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Triolo C, De Giorgi ML, Lorusso A, Cretì A, Santangelo S, Lomascolo M, Anni M, Mazzeo M, Patané S. Light Emission Properties of Thermally Evaporated CH 3NH 3PbBr 3 Perovskite from Nano- to Macro-Scale: Role of Free and Localized Excitons. NANOMATERIALS 2022; 12:nano12020211. [PMID: 35055230 PMCID: PMC8779009 DOI: 10.3390/nano12020211] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/22/2021] [Revised: 01/03/2022] [Accepted: 01/07/2022] [Indexed: 02/04/2023]
Abstract
Over the past decade, interest about metal halide perovskites has rapidly increased, as they can find wide application in optoelectronic devices. Nevertheless, although thermal evaporation is crucial for the development and engineering of such devices based on multilayer structures, the optical properties of thermally deposited perovskite layers (spontaneous and amplified spontaneous emission) have been poorly investigated. This paper is a study from a nano- to micro- and macro-scale about the role of light-emitting species (namely free carriers and excitons) and trap states in the spontaneous emission of thermally evaporated thin layers of CH3NH3PbBr3 perovskite after wet air UV light trap passivation. The map of light emission from grains, carried out by SNOM at the nanoscale and by micro-PL techniques, clearly indicates that free and localized excitons (EXs) are the dominant light-emitting species, the localized excitons being the dominant ones in the presence of crystallites. These species also have a key role in the amplified spontaneous emission (ASE) process: for higher excitation densities, the relative contribution of localized EXs basically remains constant, while a clear competition between ASE and free EXs spontaneous emission is present, which suggests that ASE is due to stimulated emission from the free EXs.
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Affiliation(s)
- Claudia Triolo
- Department of Civil, Energy, Environmental and Materials Engineering (DICEAM), Mediterranean University, 89122 Reggio Calabria, Italy;
- Correspondence: (C.T.); (M.A.)
| | - Maria Luisa De Giorgi
- Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, 73100 Lecce, Italy; (M.L.D.G.); (A.L.); (M.M.)
| | - Antonella Lorusso
- Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, 73100 Lecce, Italy; (M.L.D.G.); (A.L.); (M.M.)
| | - Arianna Cretì
- IMM-CNR Institute for Microelectronic and Microsystems, Via per Monteroni, 73100 Lecce, Italy; (A.C.); (M.L.)
| | - Saveria Santangelo
- Department of Civil, Energy, Environmental and Materials Engineering (DICEAM), Mediterranean University, 89122 Reggio Calabria, Italy;
| | - Mauro Lomascolo
- IMM-CNR Institute for Microelectronic and Microsystems, Via per Monteroni, 73100 Lecce, Italy; (A.C.); (M.L.)
| | - Marco Anni
- Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, 73100 Lecce, Italy; (M.L.D.G.); (A.L.); (M.M.)
- Correspondence: (C.T.); (M.A.)
| | - Marco Mazzeo
- Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, 73100 Lecce, Italy; (M.L.D.G.); (A.L.); (M.M.)
- CNR NANOTEC—Institute of Nanotechnology, 73100 Lecce, Italy
| | - Salvatore Patané
- Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina, 98166 Messina, Italy;
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42
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Zhao X, Liu T, Loo YL. Advancing 2D Perovskites for Efficient and Stable Solar Cells: Challenges and Opportunities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2105849. [PMID: 34668250 DOI: 10.1002/adma.202105849] [Citation(s) in RCA: 49] [Impact Index Per Article: 24.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2021] [Revised: 09/06/2021] [Indexed: 05/20/2023]
Abstract
Perovskite solar cells (PSCs) have rapidly emerged as one of the hottest topics in the photovoltaics community owing to their high power-conversion efficiencies (PCE), and the promise to be produced at low cost. Among various PSCs, typical 3D perovskite-based solar cells deliver high PCE but they suffer from severe instability, which restricts their practical applications. In contrast to 3D perovskites, 2D perovskites that incorporate larger, less volatile, and generally more hydrophobic organic cations exhibit much improved thermal, chemical, and environmental stability. 2D perovskites can have different roles within a solar cell, either as the primary light absorber (2D PSCs), or as a capping layer atop a 3D perovskite absorbing layer (2D/3D PSCs). Tradeoffs between PCE and stability exist in both types of PSCs-2D PSCs are more stable but exhibit lower efficiency while 2D/3D PSCs deliver exciting efficiency but show relatively poor stability. To address this PCE/stability tradeoff, the challenges both the 2D and 2D/3D PSCs face are identified and select works the community has undertaken to overcome them are highlighted in this review. It is ended with several recommendations on how to further improve PSCs so their performance and stability can be commensurate with application requirements.
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Affiliation(s)
- Xiaoming Zhao
- Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ, 08544, USA
| | - Tianran Liu
- Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ, 08544, USA
- Department of Electrical and Computer Engineering, Princeton University, Princeton, NJ, 08544, USA
| | - Yueh-Lin Loo
- Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ, 08544, USA
- Andlinger Center for Energy and the Environment, Princeton University, Princeton, NJ, 08544, USA
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43
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Gao Y, Li X, Liu W, Xing X, Long H, Wang K, Wang B, Lu P. Highly Tunable Enhancement and Switching of Nonlinear Emission from All-Inorganic Lead Halide Perovskites via Electric Field. NANO LETTERS 2021; 21:10230-10237. [PMID: 34859670 DOI: 10.1021/acs.nanolett.1c03142] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Herein, we demonstrate a highly tunable enhancement and switching of nonlinear emission from all-inorganic metal halide perovskites based on an asymmetrically biased metal-insulator-semiconductor (MIS) structure. We achieve 2 orders of magnitude enhancement of the two-photon-pumped photoluminescence (TPL) from CsPbBr3 microplates with the MIS structure, due to comprehensive effects including localized field effect, trap-filling effect, and collection enhancement. In particular, taking advantage of electric-field-induced passivation/activation of Br vacancies, we realize highly tunable TPL enhancement, ranging from ∼61.2-fold to ∼370.3-fold. Moreover, we demonstrate an efficient modulation of the two-photon-pumped lasing from the MIS structure, which exhibits electric field induced switching with a high on/off ratio of 67:1. This work has opened new avenues for steering carrier transport and nonlinear emission in lead halide perovskites, which shows great promise for realizing high-efficiency and tunable nonlinear nanophotonic devices.
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Affiliation(s)
- Yan Gao
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xiaohong Li
- Hubei Key Laboratory of Optical Information and Pattern Recognition, Wuhan Institute of Technology, Wuhan 430205, China
| | - Weiwei Liu
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xiangyuan Xing
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hua Long
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Kai Wang
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Bing Wang
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Peixiang Lu
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
- Hubei Key Laboratory of Optical Information and Pattern Recognition, Wuhan Institute of Technology, Wuhan 430205, China
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44
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Gong M, Jiang D, Tao T, Chen F, Xu C, Zhi T, Liu W, Liu B, Zhang R, Zheng Y. Surface plasmon coupling regulated CsPbBr 3 perovskite lasers in a metal-insulator-semiconductor structure. RSC Adv 2021; 11:37218-37224. [PMID: 35496410 PMCID: PMC9043819 DOI: 10.1039/d1ra06828h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/11/2021] [Accepted: 11/08/2021] [Indexed: 11/21/2022] Open
Abstract
A strong coupling effect often occurs between a metal and semiconductor, so micro/nano-lasers based on surface plasmons can break through the optical diffraction limit and realize unprecedented linear and nonlinear enhancement of optical processes. Hence, metal–insulator–semiconductor (M–I–S) structures based on perovskite materials were explored to design optoelectronic devices. Herein, we constructed an Ag/SiO2/CsPbBr3 hybrid structure to generate surface plasmon coupled emission between the metal and CsPbBr3 perovskite. Combined with experimental characterization and COMSOL Multiphysics software simulations, the best enhancement for CsPbBr3 radiative recombination efficiencies can be achieved with a 10 nm-thickness of the SiO2 layer and 80 nm-thickness of the Ag metal film, further verified by optimizing the thickness of the SiO2 layer above the Ag metal film. In this state, the laser threshold can be as low as 0.138 μW with a quality (Q) factor of up to 3907 under optical pumping, which demonstrate a significant step toward practical applications in biological technology, chemical identification, and optical interconnections of information transmission. A strong coupling effect often occurs between a metal and semiconductor, so micro/nano-lasers based on surface plasmons can break through the optical diffraction limit and realize unprecedented linear and nonlinear enhancement of optical processes.![]()
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Affiliation(s)
- Maogao Gong
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University Nanjing 210093 P. R. China
| | - Di Jiang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University Nanjing 210093 P. R. China
| | - Tao Tao
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University Nanjing 210093 P. R. China
| | - Feng Chen
- School of Physical and Mathematical Sciences, Nanjing Tech University Nanjing 211800 P. R. China
| | - Chunxiang Xu
- State Key Laboratory of Bioelectronics, School of Biological Sciences and Medical Engineering, Southeast University Nanjing 210096 P. R. China
| | - Ting Zhi
- School of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications Nanjing 210023 P. R. China
| | - Wei Liu
- College of Optical, Mechanical and Electrical Engineering, Zhejiang A&F University Hangzhou 311300 P. R. China
| | - Bin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University Nanjing 210093 P. R. China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University Nanjing 210093 P. R. China
| | - Youdou Zheng
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University Nanjing 210093 P. R. China
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45
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Schmitz A, Montanarella F, Schaberg LL, Abdelbaky M, Kovalenko MV, Bacher G. Optical Probing of Crystal Lattice Configurations in Single CsPbBr 3 Nanoplatelets. NANO LETTERS 2021; 21:9085-9092. [PMID: 34672607 DOI: 10.1021/acs.nanolett.1c02775] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Quantum-confined nanostructures of CsPbBr3 with luminescence quantum efficiencies approaching unity have shown tremendous potential for lighting and quantum light applications. In contrast to CsPbBr3 quantum dots, where the fine structure of the emissive exciton state has been intensely discussed, the relationship among lattice orientation, shape anisotropy, and exciton fine structure in lead halide nanoplatelets has not yet been established. In this work, we investigate the fine structure of the bright triplet exciton of individual CsPbBr3 nanoplatelets by polarization-resolved micro- and magnetophotoluminescence spectroscopy at liquid helium temperature and find a large zero-field splitting of up to 2.5 meV. A unique relation between the crystal structure and the photoluminescence emission confirms the existence of two distinct crystal configurations in such nanoplatelets with different alignments of the crystal axes with respect to the nanoplatelet facets. Polarization-resolved experiments eventually allow us to determine the absolute orientation of an individual nanoplatelet on the substrate purely by optical means.
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Affiliation(s)
- Alexander Schmitz
- Werkstoffe der Elektrotechnik & CENIDE, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg, Germany
| | - Federico Montanarella
- Laboratory of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich CH-8093, Switzerland
- Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf CH-8600, Switzerland
| | - L Leander Schaberg
- Werkstoffe der Elektrotechnik & CENIDE, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg, Germany
| | - Mohamed Abdelbaky
- Werkstoffe der Elektrotechnik & CENIDE, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg, Germany
| | - Maksym V Kovalenko
- Laboratory of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich CH-8093, Switzerland
- Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf CH-8600, Switzerland
| | - Gerd Bacher
- Werkstoffe der Elektrotechnik & CENIDE, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg, Germany
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46
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Chaudhary B, Kshetri YK, Kim HS, Lee SW, Kim TH. Current status on synthesis, properties and applications of CsPbX 3(X = Cl, Br, I) perovskite quantum dots/nanocrystals. NANOTECHNOLOGY 2021; 32:502007. [PMID: 34500445 DOI: 10.1088/1361-6528/ac2537] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2021] [Accepted: 09/09/2021] [Indexed: 06/13/2023]
Abstract
The quantum confinement effect and interesting optical properties of cesium lead halide (CsPbX3; X = Cl, Br, I) perovskite quantum dots (QDs) and nanocrystals (NCs) have given a new horizon to lighting and photonic applications. Given the exponential rate at which scientific results on CsPbX3NCs are published in the last few years, it can be expected that the research in CsPbX3NCs will further receive increasing scientific interests in the near future and possibly lead to great commercial opportunities to realize these materials based practical applications. With the rapid progress in the single-photon emitting CsPbX3QDs and NCs, practical applications of the quantum technologies such as single-photon emitting light-emitting diode, quantum lasers, quantum computing might soon be possible. But to reach at cutting edge of stable perovskite QDs/NCs, the study of fundamental insight and theoretical aspects of crystal design is yet insufficient. Even more, it has aroused many unanswered questions related to the stability, optical and electronic properties of the CsPbX3QDs. Aim of the present review is to illustrate didactically a precise study of recent progress in the synthesis, properties and applications of CsPbX3QDs and NCs. Critical issues that currently restrict the applicability of these QDs will be identified and advanced methodologies currently in the developing queue, to overcome the roadblock, will be presented. And finally, the prospects for future directions will be provided.
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Affiliation(s)
- Bina Chaudhary
- Department of Fusion Science and Technology, Sun Moon University, Chungnam, 31460, Republic of Korea
- Research Center for Eco-multifunctional Nano Materials, Sun Moon University, Chungnam, 31460, Republic of Korea
| | - Yuwaraj K Kshetri
- Research Center for Eco-multifunctional Nano Materials, Sun Moon University, Chungnam, 31460, Republic of Korea
| | - Hak-Soo Kim
- Department of Environment and Chemical Engineering, Sun Moon University, Chungnam, 31460, Republic of Korea
| | - Soo Wohn Lee
- Department of Environment and Chemical Engineering, Sun Moon University, Chungnam, 31460, Republic of Korea
| | - Tae-Ho Kim
- Department of Fusion Science and Technology, Sun Moon University, Chungnam, 31460, Republic of Korea
- Research Center for Eco-multifunctional Nano Materials, Sun Moon University, Chungnam, 31460, Republic of Korea
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47
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Su R, Fieramosca A, Zhang Q, Nguyen HS, Deleporte E, Chen Z, Sanvitto D, Liew TCH, Xiong Q. Perovskite semiconductors for room-temperature exciton-polaritonics. NATURE MATERIALS 2021; 20:1315-1324. [PMID: 34211156 DOI: 10.1038/s41563-021-01035-x] [Citation(s) in RCA: 73] [Impact Index Per Article: 24.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2020] [Accepted: 05/07/2021] [Indexed: 05/13/2023]
Abstract
Lead-halide perovskites are generally excellent light emitters and can have larger exciton binding energies than thermal energy at room temperature, exhibiting great promise for room-temperature exciton-polaritonics. Rapid progress has been made recently, although challenges and mysteries remain in lead-halide perovskite semiconductors to push polaritons to room-temperature operation. In this Perspective, we discuss fundamental aspects of perovskite semiconductors for exciton-polaritons and review the recent rapid experimental advances using lead-halide perovskites for room-temperature polaritonics, including the experimental realization of strong light-matter interaction using various types of microcavities as well as reaching the polariton condensation regime in planar microcavities and lattices.
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Affiliation(s)
- Rui Su
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Antonio Fieramosca
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Qing Zhang
- School of Materials Science and Engineering, College of Engineering, Peking University, Beijing, P. R. China
| | - Hai Son Nguyen
- Institut des Nanotechnologies de Lyon, Université de Lyon, Centre National de la Recherche Scientifique, Ecole Centrale de Lyon, Ecully, France
| | - Emmanuelle Deleporte
- LuMIn, Université Paris-Saclay, Ecole Normale Supérieure Paris-Saclay, CentraleSupélec, Centre National de la Recherche Scientifique, Gif-sur-Yvette, France
| | - Zhanghai Chen
- Department of Physics, College of Physical Science and Technology, Xiamen University, Xiamen, P. R. China
| | - Daniele Sanvitto
- CNR NANOTEC, Institute of Nanotechnology, Campus Ecotekne, Lecce, Italy.
| | - Timothy C H Liew
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, P. R. China.
- Beijing Academy of Quantum Information Sciences, Beijing, P. R. China.
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48
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Cho C, Antrack T, Kroll M, An Q, Bärschneider TR, Fischer A, Meister S, Vaynzof Y, Leo K. Electrical Pumping of Perovskite Diodes: Toward Stimulated Emission. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2101663. [PMID: 34240575 PMCID: PMC8425921 DOI: 10.1002/advs.202101663] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Revised: 05/10/2021] [Indexed: 05/05/2023]
Abstract
The success of metal halide perovskites in photovoltaic and light-emitting diodes (LEDs) motivates their application as a solid-state thin-film laser. Various perovskites have shown optically pumped stimulated emission of lasing and amplified spontaneous emission (ASE), yet the ultimate goal of electrically pumped stimulated emission has not been achieved. As an essential step toward this goal, here, a perovskite diode structure that simultaneously exhibits stable operation at high current density (≈1 kA cm-2 ) and optically excited ASE (with a threshold of 180 µJ cm-2 ) is reported. This diode structure achieves an electroluminescence quantum efficiency of 0.8% at 850 A cm-2 , which is estimated to be ≈3% of the charge carrier population required to reach ASE in the same device. It is shown that the formation of a large angle waveguide mode and the reduction of parasitic absorption losses are two major design principles for diodes to obtain a positive gain for stimulated emission. In addition to its prospect as a perovskite laser, a new application of electrically pumped ASE is proposed as an ideal perovskite LED architecture allowing 100% external radiation efficiency.
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Affiliation(s)
- Changsoon Cho
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNöthnizer straße 61Dresden01187Germany
- Present address:
Cavendish LaboratoryDepartment of PhysicsUniversity of CambridgeJ.J. Thomson AvenueCambridgeCB3 0HEUK
| | - Tobias Antrack
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNöthnizer straße 61Dresden01187Germany
| | - Martin Kroll
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNöthnizer straße 61Dresden01187Germany
| | - Qingzhi An
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNöthnizer straße 61Dresden01187Germany
- Centre for Advancing Electronics Dresden (cfaed)Technische Universität DresdenHelmholtzstraße 18Dresden01069Germany
| | - Toni R. Bärschneider
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNöthnizer straße 61Dresden01187Germany
| | - Axel Fischer
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNöthnizer straße 61Dresden01187Germany
| | - Stefan Meister
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNöthnizer straße 61Dresden01187Germany
| | - Yana Vaynzof
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNöthnizer straße 61Dresden01187Germany
- Centre for Advancing Electronics Dresden (cfaed)Technische Universität DresdenHelmholtzstraße 18Dresden01069Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität DresdenNöthnizer straße 61Dresden01187Germany
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49
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Liu W, Li Y, Yu H, Wang J, Hu A, Jia S, Li X, Yang H, Dai L, Lu G, Liu Y, Wang S, Gong Q. Imaging and Controlling Photonic Modes in Perovskite Microcavities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2100775. [PMID: 33987871 DOI: 10.1002/adma.202100775] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2021] [Revised: 03/19/2021] [Indexed: 06/12/2023]
Abstract
Perovskite microcavities have excellent photophysical properties for integrated optoelectronic devices, such as nanolasers. Imaging and controlling the photonic modes within the cavity are fundamentally important to understand and develop applications. Here, photoemission electron microscopy (PEEM) is used to image the photonic modes within optical microcavities with a nanometer-scale spatial resolution. From a CsPbBr3 microcavity, hybrid mode patterns are observed. Spatial frequency spectrum analysis on the patterns uncovers the characteristic cavity modes, which are modeled with transverse magnetic (TM) and transverse electric (TE) waves, and assigned to exciton-polariton modes. Based on this understanding, the light focus in a designed microcavity is imaged in real space and controlled by the light field polarization. The study confirms that the cavity modes in perovskites can be effectively observed by the PEEM technique under resonant excitation, which, in turn, promotes the design of optoelectronic devices based on perovskite microcavities.
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Affiliation(s)
- Wei Liu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
| | - Yaolong Li
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
| | - Haoran Yu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
| | - Ju Wang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
| | - Aiqin Hu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
| | - Shangtong Jia
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
| | - Xiaofang Li
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
| | - Hong Yang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
| | - Lun Dai
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
| | - Guowei Lu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
| | - Yunquan Liu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
- Frontiers Science Center for Nano-Optoelectronics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
| | - Shufeng Wang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
- Frontiers Science Center for Nano-Optoelectronics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
| | - Qihuang Gong
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
- Frontiers Science Center for Nano-Optoelectronics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
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50
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Wu J, Ghosh S, Su R, Fieramosca A, Liew TCH, Xiong Q. Nonlinear Parametric Scattering of Exciton Polaritons in Perovskite Microcavities. NANO LETTERS 2021; 21:3120-3126. [PMID: 33788571 DOI: 10.1021/acs.nanolett.1c00283] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Comparing with pure photons, higher nonlinearity in polariton systems has been exploited in various proof-of-principle demonstrations of efficient optical devices based on the parametric scattering effect. However, most of them demand cryogenic temperatures limited by the small exciton binding energy of traditional semiconductors or exhibit weak nonlinearity resulting from Frenkel excitons. Lead halide perovskites, possessing both a large binding energy and a strong polariton interaction, emerge as ideal platforms to explore nonlinear polariton physics toward room temperature operation. Here, we report the first observation of nonlinear parametric scattering in a lead halide perovskite microcavity with multiple polariton branches at room temperature. Driven by the scattering source from condensation in one polariton branch, correlated polariton pairs are obtained at high k states in an adjacent branch. Our results strongly advocate the ability to reach the nonlinear regime essential for perovskite polaritonics working at room temperature.
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Affiliation(s)
- Jinqi Wu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Sanjib Ghosh
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Rui Su
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Antonio Fieramosca
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Timothy C H Liew
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
- MajuLab, International Joint Research Unit UMI 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, https://majulab.cnrs.fr/
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, P.R. China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P.R. China
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