Raman scattering at pure graphene zigzag edges

Twist-angle-tunable spin texture in WSe2/graphene van der Waals heterostructures

Twist engineering has emerged as a powerful approach for modulating electronic properties in van der Waals heterostructures. While theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, experimental studies are lacking. Here, by performing spin precession experiments, we demonstrate tunability of the spin texture and associated spin-charge interconversion with twist angle in WSe2/graphene heterostructures. For specific twist angles, we detect a spin component radial with the electron's momentum, in addition to the standard orthogonal component. Our results show that the helicity of the spin texture can be reversed by twist angle, highlighting the critical role of the twist angle in the spin-orbit properties of WSe2/graphene heterostructures and paving the way for the development of spin-twistronic devices.

CoP/Co heterojunction on porous g-C3N4 nanosheets as a highly efficient catalyst for hydrogen generation

Designing non-precious catalysts to synergistically achieve a facilitated exposure of abundant active sites is highly desired but remains a significant challenge. Herein, a hetero-structured catalyst CoP-Co supported on porous g-C3N4 nanosheets (CoP-Co/CN-I) was prepared by pyrolysis and P-inducing strategy. The optimal catalyst achieves a turnover frequency (TOF) of 26 min-1 at room temperature and the apparent activation energy (Ea) is 35.5 kJ·mol-1. The catalytic activity is ranked top among the non-precious metal phosphides or the other supports. Meanwhile, the catalytic activity has no significant decrease even after 5 cycles. The CoP/Co interfaces provide richly exposed active sites, optimize hydrogen/water absorption free energy via electronic coupling, and thus improve the catalytic activity. The experimental results reveal that the CoP/Co heterojunction improves the catalytic activity due to the construction of dual-active sites. This research facilitates the innovative construction of non-noble metal catalysts to meet industrial demand for heterogeneous catalysis.

Understanding and Preventing Lubrication Failure at the Carbon Atomic Steps

Two-dimensional (2D) lamellar materials are normally capable of rendering super-low friction, wear protection, and adhesion reduction in nanoscale due to their ultralow shear strength between two basal plane surfaces. However, high friction at step edges prevents the 2D materials from achieving super-low friction in macroscale applications and eventually leads to failure of lubrication performance. Here, taking graphene as an example, the authors report that not all step edges are detrimental. The armchair (AC) step edges are found to have only a minor topographic effect on friction, while the zigzag (ZZ) edges cause friction two orders of magnitude larger than the basal plane. The AC step edge is less reactive and thus more durable. However, the ZZ structure prevails when step edges are produced mechanically, for example, through mechanical exfoliation or grinding of graphite. The authors found a way to make the high-friction ZZ edge superlubricious by reconstructing the (6,6) hexagon structure to the (5,7) azulene-like structure through thermal annealing in an inert gas environment. This will facilitate the realization of graphene-based superlubricity over a wide range of industrial applications in which avoiding the involvement of step edges is difficult.

Sisal-Fiber-Reinforced Polypropylene Flame-Retardant Composites: Preparation and Properties

Natural-fiber-reinforced polypropylene (PP) composites with a series of advantages including light weight, chemical durability, renewable resources, low in cost, etc., are being widely used in many fields such as the automotive industry, packaging, and construction. However, the flammability of plant fiber and the PP matrix restricts the application range, security, and use of these composites. Therefore, it is of great significance to study the flame retardants of such composites. In this paper, sisal-fiber-reinforced polypropylene (PP/SF) flame-retardant composites were prepared using the two-step melt blending method. The flame retardant used was an intumescent flame retardant (IFR) composed of silane-coated ammonium polyphosphate (Si-APP) and pentaerythritol (PER). The influence of different blending processes on the flammability and mechanical properties of the composites was analyzed. The findings suggested that PP/SF flame-retardant composites prepared via different blending processes showed different flame-retardant properties. The (PP/SF)/IFR composite prepared by PP/SF secondary blending with IFR showed excellent flame-retardant performance, with a limited oxygen index of about 28.3% and passing the UL-94 V-0 rating (3.2 mm) in the vertical combustion test. Compared with the (PP/IFR) /SF composite prepared by a matrix primarily blended with IFR and then secondly blended with SF, the peak heat release rate (pk HRR) and total heat release (THR) of the (PP/SF)/IFR composite decreased by 11.3% and 13.7%, respectively. In contrast, the tensile strength of the (PP/SF)/IFR system was 5.3% lower than that of the (PP/IFR)/SF system; however, the overall mechanical (tensile, flexural, and notched impact) properties of the composites prepared using three different mixing processes were similar.

Pentagons and Heptagons on Edges of Graphene Nanoflakes Analyzed by X-ray Photoelectron and Raman Spectroscopy

Identifying pentagons and heptagons in graphene nanoflake (GNF) structures at the atomic scale is important to completely understand the chemical and physical properties of these materials. Herein, we used X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy to analyze the spectral features of GNFs according to the position of pentagons and heptagons introduced onto their zigzag and armchair edges. The XPS peak maxima were shifted to higher binding energies by introducing the pentagons or heptagons on armchair rather than zigzag edges, and the structures could be distinguished depending on the positions of the introduced pentagons or heptagons. Raman spectroscopic analyses also revealed that the position of edges with introduced pentagons or heptagons could also be identified using Raman spectroscopy, with characteristic bands appearing at 800-1200 cm^-1, following the introduction of either pentagons or heptagons on armchair edges. This precise spectroscopic identification of pentagons and heptagons in GNFs provides the groundwork for the analysis of graphene-related materials.

Bulk Production of Any Ratio 12C:13C Turbostratic Flash Graphene and Its Unusual Spectroscopic Characteristics

As graphene enjoys worldwide research and deployment, the biological impact, geologic degradation, environmental retention, and even some physical phenomena remain less well studied. Bulk production of ¹³C-graphene yields a powerful route to study all of these questions. Gram-scale synthesis of high-quality and high-purity turbostratic flash graphene with varying amounts of ¹³C-enrichment, from 5% to 99%, is reported here. The material is characterized by solid state NMR spectroscopy, Raman spectroscopy, IR spectroscopy, X-ray photoelectron spectroscopy, and inductively coupled plasma mass spectrometry. Notably, an unusual enhancement in the Raman spectroscopic D' peak is observed, resulting from the modification in vibrational frequency through isotopic enrichment favoring intravalley phonon scattering modes. While the IR absorbance spectrum of graphene is for the most part silent, we prepare here ¹³C-enhanced graphene samples that show a large aromatic ¹²C═¹³C stretch that reveals this IR-active mode.

Interactions Between Epitaxial Graphene Grown on the Si- and C-Faces of 4H-SiC Investigated Using Raman Imaging and Tip-Enhanced Raman Scattering

Interactions between epitaxial graphene grown on Si- and C-faces were investigated using Raman imaging and tip-enhanced Raman scattering (TERS). In the TERS spectrum, which has a spatial resolution exceeding the diffraction limit, a D band was observed not from graphene surface, but from the edges of the epitaxial graphene ribbons without a buffer layer, which interacts with SiC on the Si-face. In contrast, for a graphene micro-island on the C-face, the D band disappeared even on the edges where the C atoms were arranged in armchair configurations. The disappearance of the edge chirality via combination between the C atoms and SiC on the C-face is responsible for this phenomenon. The TERS signals from the C-face were weaker than those from the Si-face without the buffer layer. On the Si-face with a buffer layer, the graphene TERS signal was hardly observed. TERS enhancement was suppressed by interactions on the edges or by the buffer layer between the SiC and graphene on the C- or Si-face, respectively.

Preparing a New Class of Ultrathin Graphene Nanostructure by Chemical Vapor Deposition and Its Lasing Ability

In this paper, we report a new method to grow graphene monolayers directly on a quartz substrate using chemical vapor deposition (CVD), without using any catalyst. For this purpose, ethanol as the precursor and a quartz substrate were used for growth, which controlled the growth process and the formation of an ultrathin layer of graphene. In this project, with use of plasma-enhanced chemical vapor deposition (PECVD), the substrate was cleaned by applying the cold plasma with the aim of improving the quality of the graphene monolayer grown. Atomic force microscopy (AFM) and Raman spectroscopy confirm that the graphene layer in regular triangular pieces grew to 200 nm in size. Photoluminescence spectroscopy (PL) of the samples showed a sharp peak in the blue spectrum, which indicates lasing emission in the graphene nanostructure. Finally, at a lower cost than other CVD methods, we have formed an ultrathin graphene layer on a dielectric substrate that can have many applications in the laser and photonics fields.

Algorithm-improved high-speed and non-invasive confocal Raman imaging of 2D materials

Confocal Raman microscopy is important for characterizing 2D materials, but its low throughput significantly hinders its applications. For metastable materials such as graphene oxide (GO), the low throughput is aggravated by the requirement of extremely low laser dose to avoid sample damage. Here we introduce algorithm-improved confocal Raman microscopy (ai-CRM), which increases the Raman scanning rate by one to two orders of magnitude with respect to state-of-the-art works for a variety of 2D materials. Meanwhile, GO can be imaged at a laser dose that is two to three orders of magnitude lower than previously reported, such that laser-induced variations of the material properties can be avoided. ai-CRM also enables fast and spatially resolved quantitative analysis, and is readily extended to 3D mapping of composite materials. Since ai-CRM is based on general mathematical principles, it is cost-effective, facile to implement and universally applicable to other hyperspectral imaging methods.

Laser-Assisted Lattice Recovery of Graphene by Carbon Nanodot Incorporation

Producing highly oriented graphene is a major challenge that constrains graphene from fulfilling its full potential in technological applications. The exciting properties of graphene are impeded in practical bulk materials due to lattice imperfections that hinder charge mobility. A simple method to improve the structural integrity of graphene by utilizing laser irradiation on a composite of carbon nanodots (CNDs) and 3D graphene is presented. The CNDs attach themselves to defect sites in the graphene sheets and, upon laser-assisted reduction, patch defects in the carbon lattice. Spectroscopic experiments reveal graphitic structural recovery of up to 43% and electrical conductivity four times larger than the original graphene. The composites are tested as electrodes in electrochemical capacitors and demonstrate extremely fast RC time constant as low as 0.57 ms. Due to their low defect concentrations, the reduced graphene oxide-carbon nanodot (rGO-CND) composites frequency response is sufficiently fast to operate as AC line filters, potentially replacing today's electrolytic capacitors. Using this methodology, demonstrated is a novel line filter with one of the fastest capacitive responses ever reported, and an aerial capacitance of 68.8 mF cm^-2 . This result emphasizes the decisive role of structural integrity for optimizing graphene in electronic applications.

Atomic-Scale Structural Modification of 2D Materials

2D materials have attracted much attention since the discovery of graphene in 2004. Due to their unique electrical, optical, and magnetic properties, they have potential for various applications such as electronics and optoelectronics. Owing to thermal motion and lattice growth kinetics, different atomic-scale structures (ASSs) can originate from natural or intentional regulation of 2D material atomic configurations. The transformations of ASSs can result in the variation of the charge density, electronic density of state and lattice symmetry so that the property tuning of 2D materials can be achieved and the functional devices can be constructed. Here, several kinds of ASSs of 2D materials are introduced, including grain boundaries, atomic defects, edge structures, and stacking arrangements. The design strategies of these structures are also summarized, especially for atomic defects and edge structures. Moreover, toward multifunctional integration of applications, the modulation of electrical, optical, and magnetic properties based on atomic-scale structural modification are presented. Finally, challenges and outlooks are featured in the aspects of controllable structure design and accurate property tuning for 2D materials with ASSs. This work may promote research on the atomic-scale structural modification of 2D materials toward functional applications.

Distinguishing Zigzag and Armchair Edges on Graphene Nanoribbons by X-ray Photoelectron and Raman Spectroscopies

Graphene nanoribbons (GNRs) have recently emerged as alternative 2D semiconductors owing to their fascinating electronic properties that include tunable band gaps and high charge-carrier mobilities. Identifying the atomic-scale edge structures of GNRs through structural investigations is very important to fully understand the electronic properties of these materials. Herein, we report an atomic-scale analysis of GNRs using simulated X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Tetracene with zigzag edges and chrysene with armchair edges were selected as initial model structures, and their XPS and Raman spectra were analyzed. Structurally expanded nanoribbons based on tetracene and chrysene, in which zigzag and armchair edges were combined in various ratios, were then simulated. The edge structures of chain-shaped nanoribbons composed only of either zigzag edges or armchair edges were distinguishable by XPS and Raman spectroscopy, depending on the edge type. It was also possible to distinguish planar nanoribbons consisting of both zigzag and armchair edges with zigzag/armchair ratios of 4:1 or 1:4, indicating that it is possible to analyze normally synthesized GNRs because their zigzag to armchair edge ratios are usually greater than 4 or less than 0.25. Our study on the precise identification of GNR edge structures by XPS and Raman spectroscopy provides the groundwork for the analysis of GNRs.

Effect and Characterization of Stone–Wales Defects on Graphene Quantum Dot: A First-Principles Study

A first principles based density functional theory (DFT) has been employed to identify the signature of Stone–Wales (SW) defects in semiconducting graphene quantum dot (GQD). Results show that the G mode in the Raman spectra of GQD has been red shifted to 1544.21 cm − 1 in the presence of 2.08% SW defect concentration. In addition, the intensity ratio between a robust low intense contraction–elongation mode and G mode is found to be reduced for the defected structure. We have also observed a Raman mode at 1674.04 cm − 1 due to the solo contribution of the defected bond. The increase in defect concentration, however, reduces the stability of the structures. As a consequence, the systems undergo structural buckling due to the presence of SW defect generated additional stresses. We have further explored that the 1615.45 cm − 1 Raman mode and 1619.29 cm − 1 infra-red mode are due to the collective stretching of two distinct SW defects separated at a distance 7.98 Å. Therefore, this is the smallest separation between the SW defects for their distinct existence. The pristine structure possesses maximum electrical conductivity and the same reduces to 0.37 times for 2.08% SW defect. On the other hand, the work function is reduced in the presence of defects except for the structure with SW defects separated at 7.98 Å. All these results will serve as an important reference to facilitate the potential applications of GQD based nano-devices with inherent topological SW defects.

Carbon Materials with Zigzag and Armchair Edges

Carbon materials such as graphene and graphene nanoribbon with zigzag and armchair edges have attracted much attention because of various applications such as electronics, batteries, adsorbents, and catalyst supports. Preparation of carbon materials with different edge structures at a large scale is essential for the future of carbon materials, but it is generally difficult and expensive because of the necessity of organic synthesis on metal substrates. This work demonstrated a simple preparation method of carbon materials with zigzag and armchair edges with/without nonmetallic silica supports from aromatic compounds such as tetracene with zigzag edges and chrysene with armchair edges and also determined the edge structures in detail by three types of analyses such as (1) reactive molecular dynamic simulation with a reactive force field, (2) Raman and infrared (IR) spectra combined with calculation of spectra, and (3) reactivity analyzed by oxidative gasification using thermogravimetric analysis. Two different types of carbon materials with characteristic Raman and IR spectra could be prepared. These carbon materials with different edge structures also clearly showed different tendency in oxidative gasification. This work did not only show the simple preparation method of carbon materials with different edge structures, but also contributes to the development of detailed analyses for carbon materials.

Structure of graphene and its disorders: a review

Monolayer graphene exhibits extraordinary properties owing to the unique, regular arrangement of atoms in it. However, graphene is usually modified for specific applications, which introduces disorder. This article presents details of graphene structure, including sp2 hybridization, critical parameters of the unit cell, formation of σ and π bonds, electronic band structure, edge orientations, and the number and stacking order of graphene layers. We also discuss topics related to the creation and configuration of disorders in graphene, such as corrugations, topological defects, vacancies, adatoms and sp3-defects. The effects of these disorders on the electrical, thermal, chemical and mechanical properties of graphene are analyzed subsequently. Finally, we review previous work on the modulation of structural defects in graphene for specific applications.

Optically Unraveling the Edge Chirality-Dependent Band Structure and Plasmon Damping in Graphene Edges

The nontrivial topological origin and pseudospinorial character of electron wavefunctions make edge states possess unusual electronic properties. Twenty years ago, the tight-binding model calculation predicted that zigzag termination of 2D sheets of carbon atoms have peculiar edge states, which show potential application in spintronics and modern information technologies. Although scanning probe microscopy is employed to capture this phenomenon, the experimental demonstration of its optical response remains challenging. Here, the propagating graphene plasmon provides an edge-selective polaritonic probe to directly detect and control the electronic edge state at ambient condition. Compared with armchair, the edge-band structure in the bandgap gives rise to additional optical absorption and strongly absorbed rim at zigzag edge. Furthermore, the optical conductivity is reconstructed and the anisotropic plasmon damping in graphene systems is revealed. The reported approach paves the way for detecting edge-specific phenomena in other van der Waals materials and topological insulators.

Graphene and Graphene Analogs toward Optical, Electronic, Spintronic, Green-Chemical, Energy-Material, Sensing, and Medical Applications

This spotlight discusses intriguing properties and diverse applications of graphene (Gr) and Gr analogs. Gr has brought us two-dimensional (2D) chemistry with its exotic 2D features of density of states. Yet, some of the 2D or 2D-like features can be seen on surfaces and at interfaces of bulk materials. The substrate on Gr and functionalization of Gr (including metal decoration, intercalation, doping, and hybridization) modify the unique 2D features of Gr. Despite abundant literature on physical properties and well-known applications of Gr, spotlight works based on the conceptual understanding of the 2D physical and chemical nature of Gr toward vast-ranging applications are hardly found. Here we focus on applications of Gr, based on conceptual understanding of 2D phenomena toward 2D chemistry. Thus, 2D features, defects, edges, and substrate effects of Gr are discussed first. Then, to pattern Gr electronic circuits, insight into differentiating conducting and nonconducting regions is introduced. By utilizing the unique ballistic electron transport properties and edge spin states of Gr, Gr nanoribbons (GNRs) are exploited for the design of ultrasensitive molecular sensing electronic devices (including molecular fingerprinting) and spintronic devices. The highly stable nature of Gr can be utilized for protection of corrosive metals, moisture-sensitive perovskite solar cells, and highly environment-susceptible topological insulators (TIs). Gr analogs have become new types of 2D materials having novel features such as half-metals, TIs, and nonlinear optical properties. The key insights into the functionalized Gr hybrid materials lead to the applications for not only energy storage and electrochemical catalysis, green chemistry, and electronic/spintronic devices but also biosensing and medical applications. All these topics are discussed here with the focus on conceptual understanding. Further possible applications of Gr, GNRs, and Gr analogs are also addressed in a section on outlook and future challenges.

Thermal conductivity of graphene with defects induced by electron beam irradiation

We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. High-quality graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ∼7.5 μm size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0 × 10(10) cm(-2) to 1.8 × 10(11) cm(-2) the thermal conductivity decreases from ∼(1.8 ± 0.2) × 10(3) W mK(-1) to ∼(4.0 ± 0.2) × 10(2) W mK(-1) near room temperature. At higher defect densities, the thermal conductivity reveals an intriguing saturation-type behavior at a relatively high value of ∼400 W mK(-1). The thermal conductivity dependence on the defect density is analyzed using the Boltzmann transport equation and molecular dynamics simulations. The results are important for understanding phonon - point defect scattering in two-dimensional systems and for practical applications of graphene in thermal management.

Regioselective multistep reconstructions of half-saturated zigzag carbon nanotubes

The open edge reconstruction of half-saturated (6,0) zigzag carbon nanotube (CNT) was introduced by density functional calculations. The multistep rearrangement was demonstrated as a regioselective process to generate a defective edge with alternating pentagons and heptagons. Not only the thermal stability was found to be enhanced significantly after reconstruction but also the total spin of CNT was proved to be reduced gradually from high-spin septet to close-shell singlet, revealing the critical role of deformed edge on the geometrical and magnetic properties of open-ended CNTs. Kinetically, the initial transformation was confirmed as the rate-determining step with relatively the largest reaction barrier and the following steps can take place spontaneously. © 2016 Wiley Periodicals, Inc.

Wafer-scale fabrication and growth dynamics of suspended graphene nanoribbon arrays

Adding a mechanical degree of freedom to the electrical and optical properties of atomically thin materials can provide an excellent platform to investigate various optoelectrical physics and devices with mechanical motion interaction. The large scale fabrication of such atomically thin materials with suspended structures remains a challenge. Here we demonstrate the wafer-scale bottom–up synthesis of suspended graphene nanoribbon arrays (over 1,000,000 graphene nanoribbons in 2 × 2 cm² substrate) with a very high yield (over 98%). Polarized Raman measurements reveal graphene nanoribbons in the array can have relatively uniform-edge structures with near zigzag orientation dominant. A promising growth model of suspended graphene nanoribbons is also established through a comprehensive study that combined experiments, molecular dynamics simulations and theoretical calculations with a phase-diagram analysis. We believe that our results can contribute to pushing the study of graphene nanoribbons into a new stage related to the optoelectrical physics and industrial applications.

Shaping atomically thin materials in suspended structures may provide a viable platform for nanoscale mechanical oscillators. Here, the authors demonstrate wafer-scale, high-yield synthesis of suspended graphene nanoribbon arrays using a bottom-up approach and shed light into their growth dynamics.

The role of hydrogen in oxygen-assisted chemical vapor deposition growth of millimeter-sized graphene single crystals

Involving oxygen in the traditional chemical vapor deposition (CVD) process has proven a promising approach to achieve large-scale graphene single crystals (GSCs), but its many relevant fundamental aspects are still not fully understood. Here we report a systematic study on the role of hydrogen in the growth of millimeter-sized GSCs using enclosure-like Cu structures via the oxygen-assisted CVD process. Results show that GSCs have different first layer growth behaviors on the inside and outside surfaces of a Cu enclosure when the H2 environment is varied, and these behaviors will consequently and strongly influence the adlayer formation in these GSCs, leading to two entirely different growth modes. Low H2 partial pressure (PH2) tends to result in fast growth of dendritically shaped GSCs with multiple small adlayers, but high PH2 can modify the GSC shape into hexagons with single large adlayer nuclei. This difference of adlayers is attributed to the different C diffusion paths determined by the shapes of their host GSCs. On the basis of these observations, we developed an isothermal two-step method to obtain GSCs with significantly improved growth rate and sample quality, in which low PH2 is first set to accelerate the growth rate followed by high PH2 to restrict the adlayer nuclei. Our results prove that the growth of GSCs can reach a reasonable optimization between their growth rates and sample quality by simply adjusting the CVD H2 environment, which we believe will lead to more improvements in graphene synthesis and fundamental insight into the related growth mechanisms.

Characterization of SiC-grown epitaxial graphene microislands using tip-enhanced Raman spectroscopy

Single-layer graphene microislands with smooth edges and no visible grain boundary were epitaxially grown on the C-face of 4H-SiC and then characterized at the nanoscale using tip-enhanced Raman spectroscopy (TERS). Although these graphene islands appear highly homogeneous in micro-Raman imaging, TERS reveals the nanoscale strain variation caused by ridge nanostructures. A G' band position shift up to 9 cm(-1) and a band broadening up to 30 cm(-1) are found in TERS spectra obtained from nanoridges, which is explained by the compressive strain relaxation mechanism. The small size and refined nature of the graphene islands help in minimizing the inhomogeneity caused by macroscale factors, and allow a comparative discussion of proposed mechanisms of nanoridge formation.

Fe-catalyzed etching of exfoliated graphite through carbon hydrogenation

We present an investigation on Fe-catalyzed etching of graphite by dewetting Fe thin films on graphite in forming gas. Raman mapping of the etched graphite shows thickness variation in the etched channels and reveals that the edges are predominately terminated in zigzag configuration. X-ray diffraction and photoelectron spectroscopy measurements identify that the catalytic particles are Fe with the presence of iron carbide and iron oxides. The existence of iron carbide indicates that, in additional to carbon hydrogenation, carbon dissolution into Fe is also involved during etching. Furthermore, the catalytic particles can be re-activated upon a second annealing in forming gas.

Formation of Klein Edge Doublets from Graphene Monolayers

With increasing possibilities for applications of graphene, it is essential to fully characterize the rich topological variations in graphene edge structures. Using aberration-corrected transmission electron microscopy, dangling carbon doublets at the edge of monolayer graphene crystals have been observed. Unlike the single-atom Klein edge often found at zigzag edges, these carbon dimers were observed in various edge structure environments, but most frequently on the more stable armchair edges. Observation of this Klein edge doublet over time reveals that its existence enhances the stability of armchair edges and is a route to atom abstraction on zigzag edges.

Temperature dependence of the reconstruction of zigzag edges in graphene

We examine the temperature dependence of graphene edge terminations at the atomic scale using an in situ heating holder within an aberration-corrected transmission electron microscope. The relative ratios of armchair, zigzag, and reconstructed zigzag edges from over 350 frames at each temperature are measured. Below 400 °C, the edges are dominated by zigzag terminations, but above 600 °C, this changes dramatically, with edges dominated by armchair and reconstructed zigzag edges. We show that at low temperature chemical etching effects dominate and cause deviation to the thermodynamics of the system. At high temperatures (600 and 800 °C), adsorbates are evaporated from the surface of graphene and chemical etching effects are significantly reduced, enabling the thermodynamic distribution of edge types to be observed. The growth rate of holes at high temperature is also shown to be slower than at room temperature, indicative of the reduced chemical etching process. These results provide important insights into the role of chemical etching effects in the hole formation, edge sputtering, and edge reconstruction in graphene.

Graphene edges and beyond: temperature-driven structures and electromagnetic properties

The atomic configuration of graphene edges significantly influences the various properties of graphene nanostructures, and realistic device fabrication requires precise engineering of graphene edges. However, the imaging and analysis of the intrinsic nature of graphene edges can be illusive due to contamination problems and measurement-induced structural changes to graphene edges. In this issue of ACS Nano, He et al. report an in situ heating experiment in aberration-corrected transmission electron microscopy to elucidate the temperature dependence of graphene edge termination at the atomic scale. They revealed that graphene edges predominantly have zigzag terminations below 400 °C, while above 600 °C, the edges are dominated by armchair and reconstructed zigzag edges. This report brings us one step closer to the true nature of graphene edges. In this Perspective, we outline the present understanding, issues, and future challenges faced in the field of graphene-edge-based nanodevices.

Raman characterization of defects and dopants in graphene

In this article we review Raman studies of defects and dopants in graphene as well as the importance of both for device applications. First a brief overview of Raman spectroscopy of graphene is presented. In the following section we discuss the Raman characterization of three defect types: point defects, edges, and grain boundaries. The next section reviews the dependence of the Raman spectrum on dopants and highlights several common doping techniques. In the final section, several device applications are discussed which exploit doping and defects in graphene. Generally defects degrade the figures of merit for devices, such as carrier mobility and conductivity, whereas doping provides a means to tune the carrier concentration in graphene thereby enabling the engineering of novel material systems. Accurately measuring both the defect density and doping is critical and Raman spectroscopy provides a powerful tool to accomplish this task.

Tip-enhanced Raman spectroscopy of graphene-like and graphitic platelets on ultraflat gold nanoplates

TERS was used to investigate the graphene-like platelets in gap mode geometry using radially and linearly polarized excitation.

Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition

To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moiré patterns are observed and the sensitivity of moiré interferometry proves that the graphene grains can align precisely with the underlying h-BN lattice within an error of less than 0.05°. The occurrence of moiré pattern clearly indicates that the graphene locks into h-BN via van der Waals epitaxy with its interfacial stress greatly released. It is worthy to note that the edges of the graphene grains are primarily oriented along the armchair direction. The field effect mobility in such graphene flakes exceeds 20,000 cm²·V⁻¹·s⁻¹ at ambient condition. This work opens the door of atomic engineering of graphene on h-BN, and sheds light on fundamental research as well as electronic applications based on graphene/h-BN hetero-structure.

Influence of interface combination of reduced graphene oxide/P25 composites on their visible photocatalytic performance

0.75 wt% RGO/P25 composite possesses a photodegradation rate of 100% after 120 and 150 minutes of irradiation under UV and visible light, respectively.

Lattice-oriented catalytic growth of graphene nanoribbons on heteroepitaxial nickel films

Graphene nanoribbons (GNRs) are a promising material for electronic applications, because quantum confinement in a one-dimensional nanostructure can potentially open the band gap of graphene. However, it is still a challenge to synthesize high-quality GNRs by a bottom-up approach without relying on lithographic techniques. In this work, we demonstrate lattice-oriented catalytic growth of single-layer GNRs on the surface of a heteroepitaxial Ni film. Catalytic decomposition of a poly(methyl methacrylate) film on the Ni(100) film at 1000 °C gives narrow nanoribbons with widths of 20-30 nm, which are aligned along either [011] or [011] directions of the Ni lattice. Furthermore, low-energy electron microscope (LEEM) analysis reveals that orientation of carbon hexagons in these GNRs is highly controlled by the underlying Ni(100) lattice, leading to the formation of zigzag edges. This heteroepitaxial approach would pave a way to synthesize nanoribbons with controlled orientation for future development of electronic devices based on graphene nanostructures.

Graphene: a platform for surface-enhanced Raman spectroscopy

Surface-enhanced Raman spectroscopy (SERS) imparts Raman spectroscopy with the capability of detecting analytes at the single-molecule level, but the costs are also manifold, such as a loss of signal reproducibility. Despite remarkable steps having been taken, presently SERS still seems too young to shoulder analytical missions in various practical situations. By the virtue of its unique molecular structure and physical/chemical properties, the rise of graphene opens up a unique platform for SERS studies. In this review, the multi-role of graphene played in SERS is overviewed, including as a Raman probe, as a substrate, as an additive, and as a building block for a flat surface for SERS. Apart from versatile improvements of SERS performance towards applications, graphene-involved SERS studies are also expected to shed light on the fundamental mechanism of the SERS effect.

Spectroscopic characterization of the chiral structure of individual single-walled carbon nanotubes and the edge structure of isolated graphene nanoribbons

The chiral structure of single-walled carbon nanotubes (SWNTs) and the edge structure of graphene nanoribbons (GNRs) play an important role in determining their electronic and phonon structures. Spectroscopic methods, which require simple sample preparation and cause minimal sample damage, are the most commonly utilized techniques for determining the structures of SWNTs and graphene. In this review the current status of various spectroscopic methods are presented in detail, including resonance Raman, photoluminescence (PL), and Rayleigh scattering spectroscopies, for determination of the chiral structure of individual SWNTs and the edge structure of isolated graphene, especially of graphene nanoribbons. The different photophysical processes involved in each spectroscopic method are reviewed to achieve a comprehensive understanding of the electronic and phonon properties of SWNTs and graphene. The advantages and limitations of each spectroscopic method as well as the challenges in this area are discussed.

Synthesis of patched or stacked graphene and hBN flakes: a route to hybrid structure discovery

Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) have attracted significant attention due to their remarkable properties. Numerous interesting graphene/hBN hybrid structures have been proposed but their implementation has been very limited. In this work, the synthesis of patched structures through consecutive chemical vapor deposition (CVD) on the same substrate was investigated. Both in-plane junctions and stacked layers were obtained. For stacked layers, depending on the synthesis sequence, in one case turbostratic stacking with random rotations were obtained. In another, "AA-like", slightly twisted stacking between graphene and hBN was observed with lattice orientation misalignment consistently to be <1°. Raman characterizations not only confirmed that hBN is a superior substrate but also revealed for the first time that a graphene edge with hBN passivation displays reduced D band intensity compared to an open edge. These studies pave the way for the proposed well-ordered graphene/hBN structures and outline exciting future directions for hybrid 2D materials.

Edge-dependent transport properties in graphene

Graphene has two kinds of edges which have different electronic properties. A singular electronic state emerges at zigzag edges, while it disappears at armchair edges. We study the edge-dependent transport properties in few-layer graphene by applying a side gate voltage to the edge with an ionic liquid. The devices indicating a conductance peak at the charge neutrality point have zigzag edges, confirmed by micro-Raman spectroscopy mapping. The hopping transport between zigzag edges increases the conductance.

Electrochemistry at the edge of a single graphene layer in a nanopore

We study the electrochemistry of single layer graphene edges using a nanopore-based structure consisting of stacked graphene and Al(2)O(3) dielectric layers. Nanopores, with diameters ranging from 5 to 20 nm, are formed by an electron beam sculpting process on the stacked layers. This leads to a unique edge structure which, along with the atomically thin nature of the embedded graphene electrode, demonstrates electrochemical current densities as high as 1.2 × 10(4) A/cm(2). The graphene edge embedded structure offers a unique capability to study the electrochemical exchange at an individual graphene edge, isolated from the basal plane electrochemical activity. We also report ionic current modulation in the nanopore by biasing the embedded graphene terminal with respect to the electrodes in the fluid. The high electrochemical specific current density for a graphene nanopore-based device can have many applications in sensitive chemical and biological sensing, and energy storage devices.

Large-area fabrication of periodic sub-15 nm-width single-layer graphene nanorings

A periodically aligned array of graphene nanorings (GRNRs) with a sub-15 nm linewidth at a pitch of 450 nm is fabricated with a large area, 9 cm(2) , through conventional nanoimprint lithography coupled with sophisticated metal deposition and plasma-etching processes. The existence of the single-layer GRNRs is verified by various techniques.

Imaging layer number and stacking order through formulating Raman fingerprints obtained from hexagonal single crystals of few layer graphene

Quantitative mapping of layer number and stacking order for CVD-grown graphene layers is realized by formulating Raman fingerprints obtained on two stepwise stacked graphene single-crystal domains with AB Bernal and turbostratic stacking (with ~30°interlayer rotation), respectively. The integrated peak area ratio of the G band to the Si band, A(G)/A(Si), is proven to be a good fingerprint for layer number determination, while the area ratio of the 2D and G bands, A(2D)/A(G), is shown to differentiate effectively between the two different stacking orders. The two fingerprints are well formulated and resolve, quantitatively, the layer number and stacking type of various graphene domains that used to rely on tedious transmission electron microscopy for structural analysis. The approach is also noticeable in easy discrimination of the turbostratic graphene region (~30° rotation), the structure of which resembles the well known high-mobility graphene R30/R2(±) fault pairs found on the vacuum-annealed C-face SiC and suggests an electron mobility reaching 14,700 cm(3) V(-1) s(-1). The methodology may shed light on monitoring and control of high-quality graphene growth, and thereby facilitate future mass production of potential high-speed graphene applications.

Cobalt-mediated crystallographic etching of graphite from defects

Herein is reported a study of Co-assisted crystallographic etching of graphite in hydrogen environment at temperatures above 750 °C. Unlike nanoparticle etching of graphite surface that leaves trenches, the Co could fill the hexagonal or triangular etch-pits that progressively enlarge, before finally balling-up, leaving well-defined etched pits enclosed by edges oriented at 60° or 120° relative to each other. The morphology and chirality of the etched edges have been carefully studied by transmission electron microscopy and Raman analysis, the latter indicating zigzag edges. By introducing defects to the graphite using an oxygen plasma or by utilizing the edges of graphene/graphite flakes (which are considered as defects), an ability to define the position of the etched edges is demonstrated. Based on these results, graphite strips are successfully etched from the edges and graphitic ribbons are fabricated which are enclosed by purely zigzag edges. These fabricated graphitic ribbons could potentially be isolated layer-by-layer and transferred to a device substrate for further processing into graphene nanoribbon transistors.