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Rieland L, Wagner J, Bernhardt R, Wang T, Abdul-Aziz O, Stein P, Pogna EAA, Dal Conte S, Cerullo G, Hedayat H, van Loosdrecht PHM. Ultrafast Optical Control of Exciton Diffusion in WSe 2/Graphene Heterostructures Revealed by Heterodyne Transient Grating Spectroscopy. NANO LETTERS 2024; 24:9824-9831. [PMID: 39056490 DOI: 10.1021/acs.nanolett.4c01516] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2024]
Abstract
Using heterodyne transient grating spectroscopy, we observe a significant enhancement of exciton diffusion in a monolayer WSe2 stacked on graphene. The diffusion dynamics can be optically tuned within a few picoseconds by altering the photoexcited carrier density in graphene. The effective diffusion constant in initial picoseconds in the WSe2/graphene heterostructure is (40.3 ± 4.5) cm2 s-1, representing a substantial improvement over (2.1 ± 0.8) cm2 s-1, typical for an isolated WSe2 monolayer. This enhancement can be understood in terms of a transient screening of impurities, charge traps, and defect states in WSe2 by photoexcited charge carriers in graphene. Furthermore, diffusion within WSe2 is affected by interlayer interactions, such as charge transfer, varying with the incident excitation fluence. These findings underscore the dynamical nature of screening and diffusion processes in heterostructures of 2D semiconductors and graphene and provide insights for future applications of these systems in ultrafast optoelectronic devices.
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Affiliation(s)
- Lukas Rieland
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, Köln D-50937, Germany
| | - Julian Wagner
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, Köln D-50937, Germany
| | - Robin Bernhardt
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, Köln D-50937, Germany
| | - Tianyi Wang
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, Köln D-50937, Germany
| | - Omar Abdul-Aziz
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, Köln D-50937, Germany
| | - Philipp Stein
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, Köln D-50937, Germany
| | - Eva A A Pogna
- Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza L. da Vinci 32, 20133 Milano, Italy
| | - Stefano Dal Conte
- Dipartimento di Fisica, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milan, Italy
| | - Giulio Cerullo
- Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza L. da Vinci 32, 20133 Milano, Italy
- Dipartimento di Fisica, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milan, Italy
| | - Hamoon Hedayat
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, Köln D-50937, Germany
| | - Paul H M van Loosdrecht
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, Köln D-50937, Germany
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Singh B, Han J, Meziani MJ, Cao L, Yerra S, Collins J, Dumra S, Sun YP. Polymeric Nanocomposites of Boron Nitride Nanosheets for Enhanced Directional or Isotropic Thermal Transport Performance. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1259. [PMID: 39120364 PMCID: PMC11314323 DOI: 10.3390/nano14151259] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2024] [Revised: 07/01/2024] [Accepted: 07/24/2024] [Indexed: 08/10/2024]
Abstract
Polymeric composites with boron nitride nanosheets (BNNs), which are thermally conductive yet electrically insulating, have been pursued for a variety of technological applications, especially those for thermal management in electronic devices and systems. Highlighted in this review are recent advances in the effort to improve in-plane thermal transport performance in polymer/BNNs composites and also the growing research activities aimed at composites of enhanced cross-plane or isotropic thermal conductivity, for which various filler alignment strategies during composite fabrication have been explored. Also highlighted and discussed are some significant challenges and major opportunities for further advances in the development of thermally conductive composite materials and their mechanistic understandings.
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Affiliation(s)
- Buta Singh
- Department of Chemistry, Clemson University, Clemson, SC 29634, USA (S.D.)
| | - Jinchen Han
- Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469, USA
| | - Mohammed J. Meziani
- Department of Natural Sciences, Northwest Missouri State University, Maryville, MO 64468, USA
| | - Li Cao
- Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469, USA
| | - Subhadra Yerra
- Department of Chemistry, Clemson University, Clemson, SC 29634, USA (S.D.)
| | - Jordan Collins
- Department of Chemistry, Clemson University, Clemson, SC 29634, USA (S.D.)
| | - Simran Dumra
- Department of Chemistry, Clemson University, Clemson, SC 29634, USA (S.D.)
| | - Ya-Ping Sun
- Department of Chemistry, Clemson University, Clemson, SC 29634, USA (S.D.)
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3
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Badr HO, Barsoum MW. Hydroxide-Derived Nanostructures: Scalable Synthesis, Characterization, Properties, and Potential Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402012. [PMID: 38722144 DOI: 10.1002/adma.202402012] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 04/18/2024] [Indexed: 05/28/2024]
Abstract
Metal oxide nanostructures have received an increasing attention owing to their unique chemical and physical properties along with their widespread applications in various fields. This article provides an overview of the recent discovery - christened Hydroxides-Derived Nanostructures, or HDNs - in which hydroxide aqueous solutions (mostly tetramethylammonium hydroxide, TMAH) are reacted at temperatures < 100 °C and under atmospheric pressure with various metal-containing precursors to scalably prepare novel metal oxide nanostructures. In one case, a dozen commercial and earth abundant Ti-containing powders such as binary carbides, nitrides, borides, among others, are converted into new, 1D TiO2-based lepidocrocite (1DL) nanofilaments (NFs). Application-wise, the 1DLs show outstanding performance in a number of energy, environmental, and biomedical fields such as photo- and electrocatalysis, water splitting, lithium-sulfur and lithium-ion batteries, water purification, dye degradation, cancer therapy, and polymer composites. In addition to 1DL, the HDNs family encompasses other metal oxides nanostructures including magnetic Fe3O4 nanoparticles and MnO2 birnessite-based crystalline 2D flakes. The latter showed promise in electrochemical energy conversion and storage applications. The developed recipe provides a new vista in the molecular self-assembly synthesis of nanomaterials that can advance the field with a library of novel nanostructures with substantial implications in a multitude of fields.
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Affiliation(s)
- Hussein O Badr
- Department of Material Science and Engineering, Drexel University, Philadelphia, PA, 19104, USA
| | - Michel W Barsoum
- Department of Material Science and Engineering, Drexel University, Philadelphia, PA, 19104, USA
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4
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Wadhwa G, Late DJ, Charhate S, Sankhyan SB. 1D and 2D Boron Nitride Nano Structures: A Critical Analysis for Emerging Applications in the Field of Nanocomposites. ACS OMEGA 2024; 9:26737-26761. [PMID: 38947781 PMCID: PMC11209893 DOI: 10.1021/acsomega.3c10217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2023] [Revised: 02/13/2024] [Accepted: 02/20/2024] [Indexed: 07/02/2024]
Abstract
Boron nitride (BN) with its 1D and 2D nano derivatives have gained immense popularity in both the field of research and applications. These nano derivatives have proved to be one of the most promising fillers which can be incorporated in polymers to form nanocomposites with excellent properties. These materials have been around for 25 years whereas significant research has been done in this field for only the past decade. There are many interesting properties which are imparted to the nanocomposites wherein thermal stability, large energy band gap, resistance to oxidation, excellent thermal conductivity, chemical inertness, and exceptional mechanical properties are just a few worthy of mention. Hexagonal boron nitride (h-BN) was selected as the parent material by most researchers reviewed in this paper through which 2D derivative Boron nitride nanosheets (BNNS) and 1D derivative Boron nitride nanotubes (BNNTs) are synthesized. This review will focus on the in-depth properties of h-BN and further will concisely focus on BNNS and BNNTs for their various properties. A detailed discussion of the addition of BNNS and BNNTs into polymers to form nanocomposites, their synthesis, properties, and applications is followed by a summary determining the most suitable synthesizing processes and the materials, keeping in mind the current challenges.
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Affiliation(s)
- Gunchita
Kaur Wadhwa
- Centre
of Nanoscience and Nanotechnology, Amity School of Engineering and
Technology, Amity University Maharashtra, Panvel, Mumbai, Maharashtra 410206, India
| | - Dattatray J. Late
- Centre
of Nanoscience and Nanotechnology, Amity School of Engineering and
Technology, Amity University Maharashtra, Panvel, Mumbai, Maharashtra 410206, India
| | - Shrikant Charhate
- Amity
School of Engineering and Technology, Amity
University Maharashtra, Panvel, Mumbai, Maharashtra 410206, India
| | - Shashi Bhushan Sankhyan
- Centre
of Nanoscience and Nanotechnology, Amity School of Engineering and
Technology, Amity University Maharashtra, Panvel, Mumbai, Maharashtra 410206, India
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Wang K, Choyal S, Schultz JF, McKenzie J, Li L, Liu X, Jiang N. Borophene: Synthesis, Chemistry, and Electronic Properties. Chempluschem 2024:e202400333. [PMID: 39031807 DOI: 10.1002/cplu.202400333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2024] [Revised: 06/18/2024] [Accepted: 06/19/2024] [Indexed: 07/22/2024]
Abstract
As a neighbor of carbon in the periodic table, boron exhibits versatile structural and electronic configurations, with its allotropes predicted to possess intriguing structures and properties. Since the experimental realization of two-dimensional (2D) boron sheets (borophene) on Ag(111) substrates in 2015, the experimental study of the realization and characteristics of borophene has drawn increasing interest. In this review, we summarize the synthesis and properties of borophene, which are mainly based on experimental results. First, the synthesis of borophene on different substrates, as well as borophane and bilayer borophene, featuring unique phases and properties, are discussed. Next, the chemistry of borophene, such as oxidation, hydrogenation, and its integration into heterostructures with other materials, is summarized. We also mention a few works focused on the physical properties of borophene, specifically its electronic properties. Lastly, the brief outlook addresses challenges toward practical applications of borophene and possible solutions.
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Affiliation(s)
- Kai Wang
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Shilpa Choyal
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Jeremy F Schultz
- Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - James McKenzie
- Department of Physics & Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
- Stavropoulos Center for Complex Quantum Matter, University of Notre Dame, Notre Dame, IN 46556, USA
| | - Linfei Li
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Xiaolong Liu
- Department of Physics & Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
- Stavropoulos Center for Complex Quantum Matter, University of Notre Dame, Notre Dame, IN 46556, USA
| | - Nan Jiang
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
- Department of Physics, University of Illinois Chicago, Chicago, IL 60607, USA
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6
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Hao X, Zhang T, Niu M, Han X, Yang H, Zhang Q, Hou Y, Grazioli C, Liu L, Qiao J, Wang Y. Selective Formation of Homochiral Dimers by Intermolecular Charge Transfer on a hBN Nanomesh. ACS NANO 2024; 18:11933-11940. [PMID: 38663413 DOI: 10.1021/acsnano.4c01844] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
In this study, a comprehensive characterization was conducted on a chiral starburst molecule (C57H48N4, SBM) using scanning tunneling microscopy. When adsorbed onto the hBN/Rh(111) nanomesh, these molecules demonstrate homochiral recognition, leading to a selective formation of homochiral dimers. Further tip manipulation experiments reveal that the chiral dimers are stable and primarily controlled by strong intermolecular interactions. Density functional theory (DFT) calculations supported that the chiral recognition of SBM molecules is governed by the intermolecular charge transfer mechanism, different from the common steric hindrance effect. This study emphasizes the importance of intermolecular charge transfer interactions, offering valuable insights into the chiral recognition of a simple bimolecular system. These findings hold significance for the future advancement in chirality-based electronic sensors and pharmaceuticals, where the chirality of molecules can impact their properties.
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Affiliation(s)
- Xiaoyu Hao
- School of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China
| | - Teng Zhang
- School of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China
| | - Mengmeng Niu
- School of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China
| | - Xu Han
- School of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China
| | - Huixia Yang
- School of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China
| | - Quanzhen Zhang
- School of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China
| | - Yanhui Hou
- School of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China
| | - Cesare Grazioli
- IOM-CNR, Laboratorio TASC, Sincrotrone Trieste, Trieste 34149, Italy
| | - Liwei Liu
- School of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China
| | - Jingsi Qiao
- School of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics & Yangtze Delta Region Academy, Beijing Institute of Technology (BIT), Beijing 100081, China
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7
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Hussain I, Khan AA, Ahmad I, Ahmad R, Ullah S. Systematic surface bowing in 2D III-nitride monolayers. RSC Adv 2024; 14:8896-8904. [PMID: 38500618 PMCID: PMC10945515 DOI: 10.1039/d4ra01310g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Accepted: 03/11/2024] [Indexed: 03/20/2024] Open
Abstract
In this article we report novel composite materials of bucky ball (C60 fullerene) and III-nitrides (BN, AlN, GaN, InN). The experimental feasibility of the novel composite materials is confirmed through negative binding energies and molecular dynamics simulations performed at 500 K. The structural properties of the novel composites are explored through density functional theory. An unusual phenomenon of surface bowing is observed in the 2D structure of the III-nitride monolayers due to the C60 sticking. This surface bowing systematically increases as one proceeds from BN → AlN → GaN → InN. The electron density difference and Hirshfeld charge density analysis show smaller charge transfer during the complexation, which is probably due to weak van der Waal's forces. The presence of van der Waal's forces is also confirmed by the Atom in Molecule analysis, Reduced Density Gradient Technique and Non-covalent Interaction analysis. This work provides a foundation for further theoretical and experimental studies of the novel phenomenon of systematic bowing in the 2D structure of III-nitride monolayers.
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Affiliation(s)
- Imdad Hussain
- Department of Physics, University of Malakand Chakdara Pakistan
- Center for Computational Materials Science, University of Malakand Chakdara Pakistan
| | - Adnan Ali Khan
- Department of Physics, University of Malakand Chakdara Pakistan
- Department of Chemistry, University of Malakand Chakdara Pakistan
| | - Iftikhar Ahmad
- Department of Physics, University of Malakand Chakdara Pakistan
- Center for Computational Materials Science, University of Malakand Chakdara Pakistan
| | - Rashid Ahmad
- Department of Physics, University of Malakand Chakdara Pakistan
- Department of Chemistry, University of Malakand Chakdara Pakistan
| | - Saif Ullah
- Department of Physics, University of Malakand Chakdara Pakistan
- Center for Computational Materials Science, University of Malakand Chakdara Pakistan
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Li S, Wang H, Wang C, Zhao P, Zhang C, Qiao D. First-principle study on the photoelectric properties of monolayer h-BN under different strain types. J Mol Model 2024; 30:56. [PMID: 38294566 DOI: 10.1007/s00894-024-05854-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Accepted: 01/25/2024] [Indexed: 02/01/2024]
Abstract
CONTEXT Two-dimensional materials are a new and promising research field in materials science. This is mainly attributed to their unique photoelectric and chemical properties. In addition to possessing unique optoelectronic and chemical properties, two-dimensional materials also have important application prospects in the field of field-effect devices. Based on density functional theory, the effects of uniaxial strain and equibiaxial strain on the mechanical properties, electronic structure, and optical properties of monolayer h-BN were studied using first principles. The results indicate that compressive strain has a significant impact on the stability of monolayer h-BN. The band gap width of monolayer h-BN decreases with increasing strain, and the optical properties of monolayer h-BN exhibit a relative trend under tensile and compressive strains. The influence of biaxial strain on the mechanical properties, electronic structure, and optical properties of monolayer h-BN is greater than that of uniaxial strain. METHODS All the calculations were done by the VASP software based on density functional theory. The interaction between atomic nuclei and electrons is described by the projected added wave pseudopotential (PAW), using the generalized gradient approximation (GGA) to exchange the Perdew-Burke-Ernzerhof (PBE) of the functional. To avoid interlayer interactions, a 15-Å vacuum layer was set up. The Brillouin zone selects the Monkhorst-Pack method to generate 9 × 9 × 1 of k-point grid, the cut off energy is set to 500 eV, the energy convergence standard of the system is 1 × 10-5 eV, and the interaction force between atoms is 0.01 eV/Å.
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Affiliation(s)
- ShaoRong Li
- College of Science, Xi'an University of Science and Technology, Xi'an, 710054, Shaanxi, People's Republic of China.
| | - Hao Wang
- College of Science, Xi'an University of Science and Technology, Xi'an, 710054, Shaanxi, People's Republic of China
| | - ChengYue Wang
- College of Science, Xi'an University of Science and Technology, Xi'an, 710054, Shaanxi, People's Republic of China.
- College of Safety Science and Engineering, Xi'an University of Science and Technology, Xi'an, 710054, Shaanxi, People's Republic of China.
| | - PengXiang Zhao
- College of Safety Science and Engineering, Xi'an University of Science and Technology, Xi'an, 710054, Shaanxi, People's Republic of China
| | - ChengFu Zhang
- College of Science, Xi'an University of Science and Technology, Xi'an, 710054, Shaanxi, People's Republic of China
| | - DongWei Qiao
- College of Science, Xi'an University of Science and Technology, Xi'an, 710054, Shaanxi, People's Republic of China
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9
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Freiberger EM, Steffen J, Waleska-Wellnhofer NJ, Hemauer F, Schwaab V, Görling A, Steinrück HP, Papp C. Bromination of 2D materials. NANOTECHNOLOGY 2024; 35:145703. [PMID: 38048605 DOI: 10.1088/1361-6528/ad1201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Accepted: 11/30/2023] [Indexed: 12/06/2023]
Abstract
The adsorption, reaction and thermal stability of bromine on Rh(111)-supported hexagonal boron nitride (h-BN) and graphene were investigated. Synchrotron radiation-based high-resolution x-ray photoelectron spectroscopy (XPS) and temperature-programmed XPS allowed us to follow the adsorption process and the thermal evolutionin situon the molecular scale. Onh-BN/Rh(111), bromine adsorbs exclusively in the pores of the nanomesh while we observe no such selectivity for graphene/Rh(111). Upon heating, bromine undergoes an on-surface reaction onh-BN to form polybromides (170-240 K), which subsequently decompose to bromide (240-640 K). The high thermal stability of Br/h-BN/Rh(111) suggests strong/covalent bonding. Bromine on graphene/Rh(111), on the other hand, reveals no distinct reactivity except for intercalation of small amounts of bromine underneath the 2D layer at high temperatures. In both cases, adsorption is reversible upon heating. Our experiments are supported by a comprehensive theoretical study. DFT calculations were used to describe the nature of theh-BN nanomesh and the graphene moiré in detail and to study the adsorption energetics and substrate interaction of bromine. In addition, the adsorption of bromine onh-BN/Rh(111) was simulated by molecular dynamics using a machine-learning force field.
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Affiliation(s)
- Eva Marie Freiberger
- Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstr. 3, D-91058 Erlangen, Germany
| | - Julien Steffen
- Theoretische Chemie, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstr. 3, D-91058 Erlangen, Germany
| | - Natalie J Waleska-Wellnhofer
- Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstr. 3, D-91058 Erlangen, Germany
| | - Felix Hemauer
- Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstr. 3, D-91058 Erlangen, Germany
| | - Valentin Schwaab
- Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstr. 3, D-91058 Erlangen, Germany
| | - Andreas Görling
- Theoretische Chemie, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstr. 3, D-91058 Erlangen, Germany
- Erlangen National High Performance Computing Center (NHR@FAU), Martensstr. 1, D-91058 Erlangen, Germany
| | - Hans-Peter Steinrück
- Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstr. 3, D-91058 Erlangen, Germany
| | - Christian Papp
- Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstr. 3, D-91058 Erlangen, Germany
- Physikalische und Theoretische Chemie, Freie Universität Berlin, Arnimallee 22, D-14195 Berlin, Germany
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10
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Gadore V, Mishra SR, Singh AK, Ahmaruzzaman M. Advances in boron nitride-based nanomaterials for environmental remediation and water splitting: a review. RSC Adv 2024; 14:3447-3472. [PMID: 38259991 PMCID: PMC10801356 DOI: 10.1039/d3ra08323c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Accepted: 01/05/2024] [Indexed: 01/24/2024] Open
Abstract
Boron nitride has gained wide-spread attention globally owing to its outstanding characteristics, such as a large surface area, high thermal resistivity, great mechanical strength, low density, and corrosion resistance. This review compiles state-of-the-art synthesis techniques, including mechanical exfoliation, chemical exfoliation, chemical vapour deposition (CVD), and green synthesis for the fabrication of hexagonal boron nitride and its composites, their structural and chemical properties, and their applications in hydrogen production and environmental remediation. Additionally, the adsorptive and photocatalytic properties of boron nitride-based nanocomposites for the removal of heavy metals, dyes, and pharmaceuticals from contaminated waters are discussed. Lastly, the scope of future research, including the facile synthesis and large-scale applicability of boron nitride-based nanomaterials for wastewater treatment, is presented. This review is expected to deliver preliminary knowledge of the present state and properties of boron nitride-based nanomaterials, encouraging the future study and development of these materials for their applications in various fields.
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Affiliation(s)
- Vishal Gadore
- Department of Chemistry, National Institute of Technology Silchar 788010 Assam India
| | - Soumya Ranjan Mishra
- Department of Chemistry, National Institute of Technology Silchar 788010 Assam India
| | - Ashish Kumar Singh
- Department of Chemistry, National Institute of Technology Silchar 788010 Assam India
| | - Md Ahmaruzzaman
- Department of Chemistry, National Institute of Technology Silchar 788010 Assam India
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Magaletti F, Prioglio G, Giese U, Barbera V, Galimberti M. Hexagonal Boron Nitride as Filler for Silica-Based Elastomer Nanocomposites. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 14:30. [PMID: 38202486 PMCID: PMC10780802 DOI: 10.3390/nano14010030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2023] [Revised: 12/07/2023] [Accepted: 12/15/2023] [Indexed: 01/12/2024]
Abstract
Two-dimensional hexagonal boron nitride (hBN) has attracted tremendous attention over the last few years, thanks to its stable structure and its outstanding properties, such as mechanical strength, thermal conductivity, electrical insulation, and lubricant behavior. This work demonstrates that hBN can also improve the rheological and mechanical properties of elastomer composites when used to partially replace silica. In this work, commercially available pristine hBN (hBN-p) was exfoliated and ball-mill treated in air for different durations (2.5, 5, and 10 h milling). Functionalization occurred with the -NH and -OH groups (hBN-OH). The functional groups were detected using Fourier-Transform Infrared pectroscopy (FT-IR) and were estimated to be up to about 7% through thermogravimetric analysis. The presence of an increased amount of oxygen in hBN-OH was confirmed using Scanning Electron Microscopy coupled with Energy-Dispersive X-ray Spectroscopy. (SEM-EDS). The number of stacked layers, estimated using WAXD analysis, decreased to 8-9 in hBN-OH (10 h milling) from about 130 in hBN-p. High-resolution transmission electron microscopy (HR-TEM) and SEM-EDS revealed the increase in disorder in hBN-OH. hBN-p and hBN-OH were used to partially replace silica by 15% and 30%, respectively, by volume, in elastomer composites based on poly(styrene-co-butadiene) from solution anionic polymerization (S-SBR) and poly(1,4-cis-isoprene) from Hevea Brasiliensis (natural rubber, NR) as the elastomers (volume (mm3) of composites released by the instrument). The use of both hBNs in substitution of 30% of silica led to a lower Payne effect, a higher dynamic rigidity, and an increase in E' of up to about 15% at 70 °C, with similar/lower hysteresis. Indeed, the composites with hBN-OH revealed a better balance of tan delta (higher at low temperatures and lower at high temperatures) and better ultimate properties. The functional groups reasonably promote the interaction of hBN with silica and with the silica's coupling agent, sulfur-based silane, and thus promoted the interaction with the elastomer chains. The volume of the composite, measured using a high-pressure capillary viscometer, increased by about 500% and 400% after one week of storage in the presence of hBN-p and hBN-OH. Hence, both hBNs improved the processability and the shelf life of the composites. Composites obtained using hBN-OH had even filler dispersion without the detachments of the filler from the elastomer matrix, as shown through TEM micrographs. These results pave the way for substantial improvements in the important properties of silica-based composites for tire compounds, used to reduce rolling resistance and thus the improve environmental impacts.
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Affiliation(s)
- Federica Magaletti
- Department of Chemistry, Materials and Chemical Engineering “G. Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano, Italy; (F.M.); (G.P.)
| | - Gea Prioglio
- Department of Chemistry, Materials and Chemical Engineering “G. Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano, Italy; (F.M.); (G.P.)
| | - Ulrich Giese
- Deutsches Institut für Kautschuktechnologie e. V., Eupener Straße 33, 30519 Hannover, Germany
| | - Vincenzina Barbera
- Department of Chemistry, Materials and Chemical Engineering “G. Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano, Italy; (F.M.); (G.P.)
| | - Maurizio Galimberti
- Department of Chemistry, Materials and Chemical Engineering “G. Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano, Italy; (F.M.); (G.P.)
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12
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Jiao C, Pei S, Wu S, Wang Z, Xia J. Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:114503. [PMID: 37774692 DOI: 10.1088/1361-6633/acfe89] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Accepted: 09/29/2023] [Indexed: 10/01/2023]
Abstract
Two-dimensional (2D) layered materials can stack into new material systems, with van der Waals (vdW) interaction between the adjacent constituent layers. This stacking process of 2D atomic layers creates a new degree of freedom-interlayer interface between two adjacent layers-that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures (HSs), the physical properties are largely determined by the vdW interaction between the individual layers,i.e.interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D HSs field, including fundamental physics study, property tuning techniques, and future applications.
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Affiliation(s)
- Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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13
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Nellissen AC, Fron E, Vandenwijngaerden JBF, De Feyter S, Mertens SFL, Van der Auweraer M. Spectroscopic Characterization of Thiacarbocyanine Dye Molecules Adsorbed on Hexagonal Boron Nitride: a Time-Resolved Study. ACS OMEGA 2023; 8:35638-35652. [PMID: 37810698 PMCID: PMC10552479 DOI: 10.1021/acsomega.3c02020] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/25/2023] [Accepted: 09/06/2023] [Indexed: 10/10/2023]
Abstract
Physisorption on hexagonal boron nitride (hBN) gained interest over the years thanks to its properties (chemically and thermally stable, insulating properties, etc.) and similarities to the well-known graphene. A recent study showed flat-on adsorption of several cationic thiacarbocyanine dyes on hBN with a tendency to form weakly coupled H- or I-type aggregates, while a zwitterionic thiacarbocyanine dye rather led to a tilted adsorption. With this in-depth time-resolved study using the TC-SPC technique, we confirm the results proven by adsorption isotherms, atomic force microscopy, and stationary state spectroscopy combined with molecular mechanics simulations and estimation of the corresponding exciton interaction. The absence of a systematic trend for the dependence of the decay times, normalized amplitudes of the decay components, and contribution of different components to the stationary emission spectra upon the emission wavelength observed for all studied dyes and coverages suggests the occurrence of a single emitting species. At low coverage levels, the non-mono-exponential character of the decays was attributed to adsorption on different sites characterized by different intramolecular rotational freedom or energy transfer to nonfluorescent traps or a combination of both. The difference between the decay rates of the four dyes reflects a different density of the nonfluorescent traps. Although the decay time of the unquenched dyes was in the order of magnitude of that of dye monomers in a rigid environment, it is also compatible with weakly coupled aggregates such as proposed earlier based on the stationary spectra. Hence, the adsorption leads to a rigid environment of the dyes, blocking internal conversion. Increasing the concentration of the dye solution from which the adsorption on hBN occurs increases not only the coverage of the hBN surface but also the extent of energy transfer to nonfluorescent traps. For TDC (5,5-dichloro-3-3'-diethyl-9-ethyl-thiacarbocyanine) and TD2 (3-3'-diethyl-9-ethyl-thiacarbocyanine), besides direct energy transfer to traps, exciton hopping between dye dimers followed by energy transfer to these traps occurs, which resulted in a decreasing decay time of the longest decaying component. For all dyes, it was also possible to analyze the fluorescence decays as a stretched exponential as would be expected for energy transfer to randomly distributed traps in a two-dimensional (2D) geometry. This analysis yielded a fluorescence decay time of the unquenched dyes similar to the longest decay time obtained by analysis of the fluorescence decays as a sum of three of four exponentials.
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Affiliation(s)
- Anne-Charlotte Nellissen
- Laboratory
for Photochemistry and Spectroscopy, KU
Leuven, Chem & Tech,
Celestijnenlaan 200F, 3001 Leuven, Belgium
| | - Eduard Fron
- Laboratory
for Photochemistry and Spectroscopy, KU
Leuven, Chem & Tech,
Celestijnenlaan 200F, 3001 Leuven, Belgium
| | | | - Steven De Feyter
- Laboratory
for Photochemistry and Spectroscopy, KU
Leuven, Chem & Tech,
Celestijnenlaan 200F, 3001 Leuven, Belgium
| | - Stijn F. L. Mertens
- Department
of Chemistry, Energy Lancaster and Materials Science Institute, Lancaster University, Bailrigg, LA1 4YB Lancaster, United Kingdom
| | - Mark Van der Auweraer
- Laboratory
for Photochemistry and Spectroscopy, KU
Leuven, Chem & Tech,
Celestijnenlaan 200F, 3001 Leuven, Belgium
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14
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Islam MS, Mazumder AAM, Sohag MU, Sarkar MMH, Stampfl C, Park J. Growth mechanisms of monolayer hexagonal boron nitride ( h-BN) on metal surfaces: theoretical perspectives. NANOSCALE ADVANCES 2023; 5:4041-4064. [PMID: 37560434 PMCID: PMC10408602 DOI: 10.1039/d3na00382e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Accepted: 07/17/2023] [Indexed: 08/11/2023]
Abstract
Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.
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Affiliation(s)
- Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
| | | | - Minhaz Uddin Sohag
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Md Mosarof Hossain Sarkar
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Catherine Stampfl
- School of Physics, The University of Sydney New South Wales 2006 Australia
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
- School of Electrical Engineering and Computer Science, University of Ottawa Ottawa ON K1N 6N5 Canada
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15
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Zhang XM, Tang J, Zhang J, Yu J, Sun L, Yang Z, Xia K, Sun W. A novel two-dimensional superconducting Ti layer: density functional theory and electron-beam irradiation. NANOSCALE HORIZONS 2023; 8:767-775. [PMID: 36988068 DOI: 10.1039/d2nh00508e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Since the discovery of graphene in an atomic thin layer format, many investigations have been conducted to search for two-dimensional (2D) layered materials, in which 3d-transition metals offer much new physics and great freedom of tunability. In this work, through electron-beam irradiation, we enable the manufacture of a new 2D Ti nanosheet from a suspension of Ti0.91O2 nanosheets. In state-of-the-art density functional theory (DFT), both empirical and linear response theory predicted that Hubbard Ueff values would be imposed, resulting in unstable phonon dispersion curves. In the end, the newly found Ti monolayer is confirmed to be a non-magnetic superconductor, with a medium level of electron-phonon coupling. The newly established Ti layer is quite robust under strain, and the evolution of local Dirac points in electronic bands is also analyzed in terms of linearity and energetic shift near the Fermi energy. As suggested by the Fermi surface, this metal monolayer experiences an electronic topological transition under strain. Our findings will encourage many more explorations of pure d metal-based isotopic monolayers with diverse structures and open a new playground for 2D superconductors and ultra-thin sensoring components.
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Affiliation(s)
- Xiao-Min Zhang
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Jiawei Tang
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China.
| | - Jing Zhang
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China.
| | - Jin Yu
- Jiangsu Province Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing, 219210, China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China.
| | - Zhiqing Yang
- Ji Hua Laboratory, Foshan 528251, China.
- Foshan University, Foshan 528231, China
| | - Ke Xia
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Weiwei Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China.
- Jiangsu Province Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing, 219210, China
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16
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Thomas S, Mayr F, Kulangara Madam A, Gagliardi A. Machine learning and DFT investigation of CO, CO 2 and CH 4 adsorption on pristine and defective two-dimensional magnesene. Phys Chem Chem Phys 2023; 25:13170-13182. [PMID: 37129598 DOI: 10.1039/d3cp00613a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Adsorption study of environmentally toxic small gas molecules on two-dimensional (2D) materials plays a significant role in analyzing the performance of sensors. In this work, density functional theory (DFT) and machine learning (ML) techniques have been employed to systematically study the adsorption properties of CO, CO2, and CH4 gas molecules on the pristine and defective planar magnesium monolayer, known as magnesene (2D-Mg). The DFT analysis showed that mechanically robust 2D-Mg retains its metallicity in the presence of both mono and di-vacancy defects. Our observations have shown that 2D-Mg, whether defective or pristine, exhibits distinct adsorption behaviors towards CO, CO2, and CH4 gas molecules, including varying chemisorption and physisorption, charge transfer, and distance from the gas molecules. When analyzing the recovery time of gas molecules at room temperature, it is clear that adsorption energy has a direct correlation with the adsorption-desorption cycles, and CH4 possesses an ultra-low recovery time (15.27 ps) compared to CO2 (1.04 ns) and CO (0.90 μs) molecules. The analysis showed that defects do not have a significant impact on the work function of 2D-Mg. However, the work function decreased upon adsorption of CH4, resulting in improved sensitivity due to changes in the electronic properties. Additionally, we explored supervised ML regression models to evaluate their ability to act as a surrogate for the DFT-based adsorption energy calculation. Using both system statistics and smooth overlap of atomic position (SOAP)-based featurization, we observed that adsorption energies can be predicted with a mean absolute error of 0.10 eV.
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Affiliation(s)
- Siby Thomas
- School of Computation, Information and Technology (SoCIT), Technical University of Munich (TUM), Hans-Piloty-Strasse 1, 85748 Garching, Munich, Germany.
| | - Felix Mayr
- School of Computation, Information and Technology (SoCIT), Technical University of Munich (TUM), Hans-Piloty-Strasse 1, 85748 Garching, Munich, Germany.
| | - Ajith Kulangara Madam
- Department of Physics, National Institute of Technology Karnataka (NITK), Surathkal, PO: Srinivasnagar-575025, Mangalore, Karnataka, India
| | - Alessio Gagliardi
- School of Computation, Information and Technology (SoCIT), Technical University of Munich (TUM), Hans-Piloty-Strasse 1, 85748 Garching, Munich, Germany.
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17
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Ji D, Lee Y, Nishina Y, Kamiya K, Daiyan R, Chu D, Wen X, Yoshimura M, Kumar P, Andreeva DV, Novoselov KS, Lee GH, Joshi R, Foller T. Angstrom-Confined Electrochemical Synthesis of Sub-Unit-Cell Non-Van Der Waals 2D Metal Oxides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2301506. [PMID: 37116867 DOI: 10.1002/adma.202301506] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Revised: 04/12/2023] [Indexed: 06/19/2023]
Abstract
Bottom-up electrochemical synthesis of atomically thin materials is desirable yet challenging, especially for non-vanderWaals (non-vdW) materials. Thicknesses below a few nanometers have not been reported yet, posing the question how thin can non-vdW materials be electrochemically synthesized. This is important as materials with (sub-)unit-cell thickness often show remarkably different properties compared to their bulk form or thin films of several nanometers thickness. Here, a straightforward electrochemical method utilizing the angstrom-confinement of laminar reduced graphene oxide (rGO) nanochannels is introduced to obtain a centimeter-scale network of atomically thin (<4.3 Å) 2D-transition metal oxides (2D-TMO). The angstrom-confinement provides a thickness limitation, forcing sub-unit-cell growth of 2D-TMO with oxygen and metal vacancies. It is showcased that Cr2 O3 , a material without significant catalytic activity for the oxygen evolution reaction (OER) in bulk form, can be activated as a high-performing catalyst if synthesized in the 2D sub-unit-cell form. This method displays the high activity of sub-unit-cell form while retaining the stability of bulk form, promising to yield unexplored fundamental science and applications. It is shown that while retaining the advantages of bottom-up electrochemical synthesis, like simplicity, high yield, and mild conditions, the thickness of TMO can be limited to sub-unit-cell dimensions.
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Affiliation(s)
- Dali Ji
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Yunah Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea
| | - Yuta Nishina
- Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushimanaka, Kita-ku, Okayama, 700-8530, Japan
| | - Kazuhide Kamiya
- Research Center for Solar Energy Chemistry, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka, 560-8531, Japan
- Innovative Catalysis Science Division, Institute for Open and Transdisciplinary Research Initiatives (ICS-OTRI), Osaka University, Suita, Osaka, 565-0871, Japan
| | - Rahman Daiyan
- School of Chemical Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Dewei Chu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Xinyue Wen
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Masamichi Yoshimura
- Graduate School of Engineering, Toyota Technological Institute, Nagoya, 468-8511, Japan
| | - Priyank Kumar
- School of Chemical Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Daria V Andreeva
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117575, Singapore
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117575, Singapore
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea
| | - Rakesh Joshi
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Tobias Foller
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
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18
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Holbrook M, Chen Y, Kim H, Frammolino L, Liu M, Pan CR, Chou MY, Zhang C, Shih CK. Creating a Nanoscale Lateral Junction in a Semiconductor Monolayer with a Large Built-in Potential. ACS NANO 2023; 17:6966-6972. [PMID: 36946518 DOI: 10.1021/acsnano.3c01082] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The ability to engineer atomically thin nanoscale lateral junctions is critical to lay the foundation for future two-dimensional (2D) device technology. However, the traditional approach to creating a heterojunction by direct growth of a heterostructure of two different materials constrains the available band offsets, and it is still unclear if large built-in potentials are attainable for 2D materials. The electronic properties of atomically thin semiconducting transition metal dichalcogenides (TMDs) are not static, and their exciton binding energy and quasiparticle band gap depend strongly on the proximal environment. Recent studies have shown that this effect can be harnessed to engineer the lateral band profile of a monolayer TMD to create a lateral electronic junction. Here we demonstrate the synthesis of a nanoscale lateral junction in monolayer MoSe2 by intercalating Se at the interface of an hBN/Ru(0001) substrate. The Se intercalation creates a spatially abrupt modulation of the local hBN/Ru work function, which is imprinted directly onto an overlying MoSe2 monolayer to create a lateral junction with a large built-in potential of 0.83 ± 0.06 eV. We spatially resolve the MoSe2 band profile and work function using scanning tunneling spectroscopy to map out the nanoscale depletion region. The Se intercalation also modifies the dielectric environment, influencing the local band gap renormalization and increasing the MoSe2 band gap by ∼0.26 ± 0.1 eV. This work illustrates that environmental proximity engineering provides a robust method to indirectly manipulate the band profile of 2D materials outside the limits of their intrinsic properties.
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Affiliation(s)
- Madisen Holbrook
- Department of Physics, The University of Texas, Austin, Texas 78712, United States
| | - Yuxuan Chen
- Department of Physics, The University of Texas, Austin, Texas 78712, United States
| | - Hyunsue Kim
- Department of Physics, The University of Texas, Austin, Texas 78712, United States
| | - Lisa Frammolino
- Department of Physics, The University of Texas, Austin, Texas 78712, United States
| | - Mengke Liu
- Department of Physics, The University of Texas, Austin, Texas 78712, United States
| | - Chi-Ruei Pan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
| | - Mei-Yin Chou
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
| | - Chengdong Zhang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chih-Kang Shih
- Department of Physics, The University of Texas, Austin, Texas 78712, United States
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19
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Li J, Ghorbani-Asl M, Lasek K, Pathirage V, Krasheninnikov AV, Batzill M. A van der Waals Heterostructure with an Electronically Textured Moiré Pattern: PtSe 2/PtTe 2. ACS NANO 2023; 17:5913-5920. [PMID: 36926837 DOI: 10.1021/acsnano.2c12879] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The interlayer interaction in Pt-dichalcogenides strongly affects their electronic structures. The modulations of the interlayer atom-coordination in vertical heterostructures based on these materials are expected to laterally modify these interlayer interactions and thus provide an opportunity to texture the electronic structure. To determine the effects of local variation of the interlayer atom coordination on the electronic structure of PtSe2, van der Waals heterostructures of PtSe2 and PtTe2 have been synthesized by molecular beam epitaxy. The heterostructure forms a coincidence lattice with 13 unit cells of PtSe2 matching 12 unit cells of PtTe2, forming a moiré superstructure. The interaction with PtTe2 reduces the band gap of PtSe2 monolayers from 1.8 eV to 0.5 eV. While the band gap is uniform across the moiré unit cell, scanning tunneling spectroscopy and dI/dV mapping identify gap states that are localized within certain regions of the moiré unit cell. Deep states associated with chalcogen pz-orbitals at binding energies of ∼ -2 eV also exhibit lateral variation within the moiré unit cell, indicative of varying interlayer chalcogen interactions. Density functional theory calculations indicate that local variations in atom coordination in the moiré unit cell cause variations in the charge transfer from PtTe2 to PtSe2, thus affecting the value of the interface dipole. Experimentally this is confirmed by measuring the local work function by field emission resonance spectroscopy, which reveals a large work function modulation of ∼0.5 eV within the moiré structure. These results show that the local coordination variation of the chalcogen atoms in the PtSe2/PtTe2 van der Waals heterostructure induces a nanoscale electronic structure texture in PtSe2.
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Affiliation(s)
- Jingfeng Li
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Mahdi Ghorbani-Asl
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Kinga Lasek
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Vimukthi Pathirage
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- Department of Applied Physics, Aalto University, P.O. Box 11100, 00076 Aalto, Finland
| | - Matthias Batzill
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
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20
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Simpson G, García-López V, Boese AD, Tour JM, Grill L. Directing and Understanding the Translation of a Single Molecule Dipole. J Phys Chem Lett 2023; 14:2487-2492. [PMID: 36867737 PMCID: PMC10026170 DOI: 10.1021/acs.jpclett.2c03472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2022] [Accepted: 02/28/2023] [Indexed: 06/18/2023]
Abstract
Understanding the directed motion of a single molecule on surfaces is not only important in the well-established field of heterogeneous catalysis but also for the design of artificial nanoarchitectures and molecular machines. Here, we report how the tip of a scanning tunneling microscope (STM) can be used to control the translation direction of a single polar molecule. Through the interaction of the molecular dipole with the electric field of the STM junction, it was found that both translations and rotations of the molecule occur. By considering the location of the tip with respect to the axis of the dipole moment, we can deduce the order in which rotation and translation take place. While the molecule-tip interaction dominates, computational results suggest that the translation is influenced by the surface direction along which the motion takes place.
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Affiliation(s)
- Grant
J. Simpson
- Department
of Physical Chemistry, Institute of Chemistry, University of Graz, Heinrichstrasse 28, 8010 Graz, Austria
| | - Víctor García-López
- Departments
of Chemistry and Materials Science and NanoEngineering and Smalley-Curl
Institute and NanoCarbon Center, Rice University, Houston, Texas 77005, United States
| | - A. Daniel Boese
- Department
of Theoretical Chemistry, Institute of Chemistry, University of Graz, Heinrichstrasse 28, 8010 Graz, Austria
| | - James M. Tour
- Departments
of Chemistry and Materials Science and NanoEngineering and Smalley-Curl
Institute and NanoCarbon Center, Rice University, Houston, Texas 77005, United States
| | - Leonhard Grill
- Department
of Physical Chemistry, Institute of Chemistry, University of Graz, Heinrichstrasse 28, 8010 Graz, Austria
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21
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Liang J, Wang Y, Yang Z, Xu LC, Xue L, Liu R, Liu X. A theoretical study on the line defects in β 12-borophene: enhanced direct-current and alternating-current conductances. Phys Chem Chem Phys 2023; 25:6067-6078. [PMID: 36751891 DOI: 10.1039/d2cp04711j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/09/2023]
Abstract
Using density functional theory and the non-equilibrium Green's function method, we theoretically investigated the structures, stabilities, electronic properties, and the direct-current (DC) and alternating-current (AC) transport properties of the line defects in two-dimensional material β12-borophene. Our results suggest that there exist six line defects that can enhance the stability of β12-borophene and the line defects have profound influences on the electronic structure of β12-borophene. Along the zigzag direction, the line defects can change the atomic orbital components of the Dirac cones in perfect β12-borophene, but the line defects along the armchair direction have complicated influences on the Dirac cones. In the case of DC transport, some of the line defects lead to the constant DC phenomenon and the negative differential resistance effect, and enhance the DC conductances since the line defects exhibit typical one-dimensional characteristics. In the case of AC transport, some of the line defects enhance the AC conductances in the medium-frequency and high-frequency ranges through the photon-assisted tunneling effect. The microscopic mechanisms of the enhanced DC and AC conductances are different. In addition, for a low-frequency range, the equivalent circuits of β12-borophene and the line defects were also suggested, which will be beneficial for designing borophene-based functional nanodevices.
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Affiliation(s)
- Jianxin Liang
- College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Yue Wang
- College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Zhi Yang
- College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Li-Chun Xu
- College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Lin Xue
- College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Ruiping Liu
- College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
| | - Xuguang Liu
- Key Lab of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China.,College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China
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Naclerio AE, Kidambi PR. A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207374. [PMID: 36329667 DOI: 10.1002/adma.202207374] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2022] [Revised: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.
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Affiliation(s)
- Andrew E Naclerio
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
| | - Piran R Kidambi
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Vanderbilt Institute of Nanoscale Sciences and Engineering, Vanderbilt University, Nashville, TN, 37212, USA
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23
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Choi WJ, Lee SY, Park SJ. Effect of Ambient Plasma Treatments on Thermal Conductivity and Fracture Toughness of Boron Nitride Nanosheets/Epoxy Nanocomposites. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:nano13010138. [PMID: 36616048 PMCID: PMC9823992 DOI: 10.3390/nano13010138] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Revised: 12/20/2022] [Accepted: 12/22/2022] [Indexed: 05/27/2023]
Abstract
With the rapid growth in the miniaturization and integration of modern electronics, the dissipation of heat that would otherwise degrade the device efficiency and lifetime is a continuing challenge. In this respect, boron nitride nanosheets (BNNS) are of significant attraction as fillers for high thermal conductivity nanocomposites due to their high thermal stability, electrical insulation, and relatively high coefficient of thermal conductivity. Herein, the ambient plasma treatment of BNNS (PBNNS) for various treatment times is described for use as a reinforcement in epoxy nanocomposites. The PBNNS-loaded epoxy nanocomposites are successfully manufactured in order to investigate the thermal conductivity and fracture toughness. The results indicate that the PBNNS/epoxy nanocomposites subjected to 7 min plasma treatment exhibit the highest thermal conductivity and fracture toughness, with enhancements of 44 and 110%, respectively, compared to the neat nanocomposites. With these enhancements, the increases in surface free energy and wettability of the PBNNS/epoxy nanocomposites are shown to be attributable to the enhanced interfacial adhesion between the filler and matrix. It is demonstrated that the ambient plasma treatments enable the development of highly dispersed conductive networks in the PBNNS epoxy system.
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Affiliation(s)
| | - Seul-Yi Lee
- Correspondence: (S.-Y.L.); (S.-J.P.); Tel.: +82-32-876-7234 (S.-J.P.)
| | - Soo-Jin Park
- Correspondence: (S.-Y.L.); (S.-J.P.); Tel.: +82-32-876-7234 (S.-J.P.)
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24
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Hemmi A, Seitsonen AP, Greber T, Cun H. The Winner Takes It All: Carbon Supersedes Hexagonal Boron Nitride with Graphene on Transition Metals at High Temperatures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2205184. [PMID: 36319466 DOI: 10.1002/smll.202205184] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/23/2022] [Revised: 09/26/2022] [Indexed: 06/16/2023]
Abstract
The production of high-quality hexagonal boron nitride (h-BN) is essential for the ultimate performance of 2D materials-based devices, since it is the key 2D encapsulation material. Here, a decisive guideline is reported for fabricating high-quality h-BN on transition metals. It is crucial to exclude carbon from the h-BN related process, otherwise carbon prevails over boron and nitrogen due to its larger binding energy, thereupon forming graphene on metals after high-temperature annealing. The surface reaction-assisted conversion from h-BN to graphene with high-temperature treatments is demonstrated. The pyrolysis temperature Tp is an important quality indicator for h-BN/metals. When the temperature is lower than Tp , the quality of the h-BN layer is improved upon annealing. While the annealing temperature is above Tp , in case of carbon-free conditions, the h-BN disintegrates and nitrogen desorbs from the surface more easily than boron, eventually leading to clean metal surfaces. However, once the h-BN layer is exposed to carbon, graphene forms on Pt(111) in the high-temperature regime. This not only provides an indispensable principle (avoid carbon) for fabricating high-quality h-BN materials on transition metals, but also offers a straightforward method for the surface reaction-assisted conversion from h-BN to graphene on Pt(111).
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Affiliation(s)
- Adrian Hemmi
- Physik-Institut, Universität Zürich, Zürich, 8057, Switzerland
| | | | - Thomas Greber
- Physik-Institut, Universität Zürich, Zürich, 8057, Switzerland
| | - Huanyao Cun
- Physik-Institut, Universität Zürich, Zürich, 8057, Switzerland
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25
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Naimatullah, Li D, Gahungu G, Li W, Zhang J. A theoretical investigation of NO oxidation using single metal atom catalysts with boron nitride. COMPUT THEOR CHEM 2022. [DOI: 10.1016/j.comptc.2022.113997] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
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26
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Pei S, Wang Z, Xia J. Interlayer Coupling: An Additional Degree of Freedom in Two-Dimensional Materials. ACS NANO 2022; 16:11498-11503. [PMID: 35943159 DOI: 10.1021/acsnano.1c11498] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Due to their layered nature, two-dimensional nanomaterials can stack into artificial material systems, with van der Waals interaction between the adjacent constituent layers. In such heterostructures, the physical properties are largely affected by the interlayer coupling and can thus be effectively tuned by a number of means. In this Perspective, we highlight four such experimental approaches: stacking order, electric field, intercalation, and pressure, and we discuss challenges and opportunities in future studies for van der Waals heterostructures.
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Affiliation(s)
- Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
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27
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Koutsouflakis E, Krylov D, Bachellier N, Sostina D, Dubrovin V, Liu F, Spree L, Velkos G, Schimmel S, Wang Y, Büchner B, Westerström R, Bulbucan C, Kirkpatrick K, Muntwiler M, Dreiser J, Greber T, Avdoshenko SM, Dorn H, Popov AA. Metamagnetic transition and a loss of magnetic hysteresis caused by electron trapping in monolayers of single-molecule magnet Tb 2@C 79N. NANOSCALE 2022; 14:9877-9892. [PMID: 35781298 DOI: 10.1039/d1nr08475e] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Realization of stable spin states in surface-supported magnetic molecules is crucial for their applications in molecular spintronics, memory storage or quantum information processing. In this work, we studied the surface magnetism of dimetallo-azafullerene Tb2@C79N, showing a broad magnetic hysteresis in a bulk form. Surprisingly, monolayers of Tb2@C79N exhibited a completely different behavior, with the prevalence of a ground state with antiferromagnetic coupling at low magnetic field and a metamagnetic transition in the magnetic field of 2.5-4 T. Monolayers of Tb2@C79N were deposited onto Cu(111) and Au(111) by evaporation in ultra-high vacuum conditions, and their topography and electronic structure were characterized by scanning tunneling microscopy and spectroscopy (STM/STS). X-ray photoelectron spectroscopy (XPS), in combination with DFT studies, revealed that the nitrogen atom of the azafullerene cage tends to avoid metallic surfaces. Magnetic properties of the (sub)monolayers were then studied by X-ray magnetic circular dichroism (XMCD) at the Tb-M4,5 absorption edge. While in bulk powder samples Tb2@C79N behaves as a single-molecule magnet with ferromagnetically coupled magnetic moments and blocking of magnetization at 28 K, its monolayers exhibited a different ground state with antiferromagnetic coupling of Tb magnetic moments. To understand if this unexpected behavior is caused by a strong hybridization of fullerenes with metallic substrates, XMCD measurements were also performed for Tb2@C79N adsorbed on h-BN|Rh(111) and MgO|Ag(100). The co-existence of two forms of Tb2@C79N was found on these substrates as well, but magnetization curves showed narrow magnetic hysteresis detectable up to 25 K. The non-magnetic state of Tb2@C79N in monolayers is assigned to anionic Tb2@C79N- species with doubly-occupied Tb-Tb bonding orbital and antiferromagnetic coupling of the Tb moments. A charge transfer from the substrate or trapping of secondary electrons are discussed as a plausible origin of these species.
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Affiliation(s)
- Emmanouil Koutsouflakis
- Leibniz Institute for Solid State and Materials Research (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany.
| | - Denis Krylov
- Leibniz Institute for Solid State and Materials Research (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany.
| | - Nicolas Bachellier
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - Daria Sostina
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - Vasilii Dubrovin
- Leibniz Institute for Solid State and Materials Research (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany.
| | - Fupin Liu
- Leibniz Institute for Solid State and Materials Research (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany.
| | - Lukas Spree
- Leibniz Institute for Solid State and Materials Research (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany.
| | - Georgios Velkos
- Leibniz Institute for Solid State and Materials Research (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany.
| | - Sebastian Schimmel
- Leibniz Institute for Solid State and Materials Research (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany.
| | - Yaofeng Wang
- Leibniz Institute for Solid State and Materials Research (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany.
| | - Bernd Büchner
- Leibniz Institute for Solid State and Materials Research (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany.
| | - Rasmus Westerström
- The Division of Synchrotron Radiation Research, Lund University, SE-22100 Lund, Sweden
- NanoLund, Lund University, Box 118, 22100 Lund, Sweden
| | - Claudiu Bulbucan
- The Division of Synchrotron Radiation Research, Lund University, SE-22100 Lund, Sweden
- NanoLund, Lund University, Box 118, 22100 Lund, Sweden
| | - Kyle Kirkpatrick
- Department of Chemistry, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA
| | - Matthias Muntwiler
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - Jan Dreiser
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - Thomas Greber
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
- Physik-Institut der Universität Zürich, Winterthurerstr. 190, CH-8057 Zürich, Switzerland
| | - Stas M Avdoshenko
- Leibniz Institute for Solid State and Materials Research (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany.
| | - Harry Dorn
- Department of Chemistry, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA
| | - Alexey A Popov
- Leibniz Institute for Solid State and Materials Research (IFW Dresden), Helmholtzstraße 20, 01069 Dresden, Germany.
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Pedram-rad T, Es'haghi Z, Ahmadpour A, Samadi Kazemi M, Akbar Mohammadi A. Carbon-dot Confined in Graphene-Analogous Boron Nitride for Enhanced Oxidative Desulfurization. ARAB J CHEM 2022. [DOI: 10.1016/j.arabjc.2022.104084] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022] Open
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29
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Yang Y, Peng Y, Saleem MF, Chen Z, Sun W. Hexagonal Boron Nitride on III–V Compounds: A Review of the Synthesis and Applications. MATERIALS 2022; 15:ma15134396. [PMID: 35806522 PMCID: PMC9267908 DOI: 10.3390/ma15134396] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/25/2022] [Revised: 06/09/2022] [Accepted: 06/11/2022] [Indexed: 01/11/2023]
Abstract
Since the successful separation of graphene from its bulk counterpart, two-dimensional (2D) layered materials have become the focus of research for their exceptional properties. The layered hexagonal boron nitride (h-BN), for instance, offers good lubricity, electrical insulation, corrosion resistance, and chemical stability. In recent years, the wide-band-gap layered h-BN has been recognized for its broad application prospects in neutron detection and quantum information processing. In addition, it has become very important in the field of 2D crystals and van der Waals heterostructures due to its versatility as a substrate, encapsulation layer, and a tunneling barrier layer for various device applications. However, due to the poor adhesion between h-BN and substrate and its high preparation temperature, it is very difficult to prepare large-area and denseh-BN films. Therefore, the controllable synthesis of h-BN films has been the focus of research in recent years. In this paper, the preparation methods and applications of h-BN films on III–V compounds are systematically summarized, and the prospects are discussed.
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Affiliation(s)
- Yufei Yang
- Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (Y.Y.); (Y.P.)
| | - Yi Peng
- Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (Y.Y.); (Y.P.)
| | - Muhammad Farooq Saleem
- Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (Y.Y.); (Y.P.)
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Correspondence: (W.S.); (M.F.S.); (Z.C.)
| | - Ziqian Chen
- Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (Y.Y.); (Y.P.)
- Correspondence: (W.S.); (M.F.S.); (Z.C.)
| | - Wenhong Sun
- Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (Y.Y.); (Y.P.)
- MOE Key Laboratory of New Processing Technology for Nonferrous Metals and the Guangxi Key of Processing for Non-Ferrous Metals and Featured Materials, Nanning 530004, China
- Correspondence: (W.S.); (M.F.S.); (Z.C.)
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30
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Zerger CZ, Rodenbach LK, Chen YT, Safvati B, Brubaker MZ, Tran S, Chen TA, Li MY, Li LJ, Goldhaber-Gordon D, Manoharan HC. Nanoscale Electronic Transparency of Wafer-Scale Hexagonal Boron Nitride. NANO LETTERS 2022; 22:4608-4615. [PMID: 35536749 DOI: 10.1021/acs.nanolett.1c04274] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Monolayer hexagonal boron nitride (hBN) has attracted interest as an ultrathin tunnel barrier or environmental protection layer. Recently, wafer-scale hBN growth on Cu(111) was developed for semiconductor chip applications. For basic research and technology, understanding how hBN perturbs underlying electronically active layers is critical. Encouragingly, hBN/Cu(111) has been shown to preserve the Cu(111) surface state (SS), but it was unknown how tunneling into this SS through hBN varies spatially. Here, we demonstrate that the Cu(111) SS under wafer-scale hBN is homogeneous in energy and spectral weight over nanometer length scales and across atomic terraces. In contrast, a new spectral feature─not seen on bare Cu(111)─varies with atomic registry and shares the spatial periodicity of the hBN/Cu(111) moiré. This work demonstrates that, for some 2D electron systems, an hBN overlayer can act as a protective yet remarkably transparent window on fragile low-energy electronic structure below.
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Affiliation(s)
- Caleb Z Zerger
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Linsey K Rodenbach
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Yi-Ting Chen
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Benjamin Safvati
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Morgan Z Brubaker
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Steven Tran
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Tse-An Chen
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu 300, Taiwan
| | - Ming-Yang Li
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu 300, Taiwan
| | - Lain-Jong Li
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu 300, Taiwan
- Department of Mechanical Engineering, University of Hong Kong, Pok Fu Lam, Hong Kong
| | - David Goldhaber-Gordon
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Hari C Manoharan
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
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31
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Ahmed T, Aminur Rahman M, Islam R, Akter Piya A, Ud Daula Shamim S. Unravelling the adsorption performance of BN, AlN, GaN and InN 2D nanosheets towards the ciclopirox, 5-fluorouracil and nitrosourea for anticancer drug delivery motive: A DFT-D with QTAIM, PCM and COSMO investigations. COMPUT THEOR CHEM 2022. [DOI: 10.1016/j.comptc.2022.113797] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
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32
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Zhang Z, Hu J, Yang P, Pan S, Quan W, Li N, Zhu L, Zhang Y. Modulating the periods and electronic properties of striped moiré superstructures for monolayer WSe 2 on Au(100) by varied interface coupling. NANOSCALE 2022; 14:7720-7728. [PMID: 35579051 DOI: 10.1039/d2nr01442d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Moiré superlattices formed by the stacking of two-dimensional (2D) transition metal dichalcogenide lattices on substrate lattices have been reported to imply a crucial effect on the electronic properties of 2D materials (e.g., band gap, doping level) and their physical properties. Herein, we report the direct observation of various striped moiré superstructures for monolayer WSe2 on the Au(100) facet, due to the lattice symmetry difference and relative rotation. The periodicities or the inter-stripe distances for striped superstructures fall in a range of 0-15 nm or 0-3 nm after relatively low or high temperature annealing processes, respectively. The diverse striped moiré superstructures then served as perfect platforms for examining the electronic band gap tunability for monolayer WSe2/Au(100) by using scanning tunneling microscopy/spectroscopy (STM/STS), which increases from ∼1.59 eV to ∼1.90 eV with increasing moiré periods from ∼1.62 to ∼11.58 nm. The coupling strength of monolayer WSe2/Au(100) with various striped patterns is thus proposed to be modulated by the different relative orientations. This work should hereby provide some fundamental references for the domain orientation control, interface coupling strength, and application explorations of two-dimensional layered materials in future electronics and optoelectronics.
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Affiliation(s)
- Zehui Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China.
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Pengfei Yang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China.
| | - Wenzhi Quan
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Ning Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China.
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China.
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China.
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33
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Park C, Yoon M. Topography inversion in scanning tunneling microscopy of single-atom-thick materials from penetrating substrate states. Sci Rep 2022; 12:7321. [PMID: 35513468 PMCID: PMC9072348 DOI: 10.1038/s41598-022-10870-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2022] [Accepted: 04/12/2022] [Indexed: 11/21/2022] Open
Abstract
Scanning tunneling microscopy (STM) is one of the indispensable tools to characterize surface structures, but the distinction between atomic geometry and electronic effects based on the measured tunneling current is not always straightforward. In particular, for single-atomic-thick materials (graphene or boron nitride) on metallic substrates, counterintuitive phenomena such as a larger tunneling current for insulators than for metal and a topography opposite to the atomic geometry are reported. Using first-principles density functional theory calculations combined with analytical modeling, we reveal the critical role of penetrating states of metallic substrates that surpass 2D material states, hindering the measurement of intrinsic 2D materials states and leading to topography inversion. Our finding should be instrumental in the interpretation of STM topographies of atomic-thick materials and in the development of 2D material for (opto)electronic and various quantum applications.
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Affiliation(s)
- Changwon Park
- School of Computational Sciences, Korea Institute for Advanced Study, Hoegiro 85, Seoul, 02455, Republic of Korea.
| | - Mina Yoon
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
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34
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Szitás Á, Farkas AP, Faur V, Nikolett B, Kiss J, Kónya Z. Investigation of the adsorption properties of cyclic C6 molecules on h-BN/Rh(111) surface, efforts to cover the boron nitride nanomesh by graphene. SURFACES AND INTERFACES 2022. [DOI: 10.1016/j.surfin.2022.102034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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35
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Ordered Patterns of Copper Phthalocyanine Nanoflowers Grown Around Fe Islands on Au(111). J CLUST SCI 2022. [DOI: 10.1007/s10876-022-02260-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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36
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Zhao R, Wei X, Zhu H. Edge stabilities, properties and growth kinetics of graphene-like two dimensional monolayers composed with Group 15 elements. Phys Chem Chem Phys 2022; 24:3348-3356. [PMID: 35060976 DOI: 10.1039/d1cp05742a] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Graphene-like two dimensional (2D) monolayers composed of β-structured Group 15 (β-G15) elements have attracted great attention due to their intrinsic bandgaps, thermodynamic stabilities and high mobilities. Quite different from graphene, a buckle with amplitude ranging from 1.24 Å to 1.65 Å exists along the z direction in β-G15 films. To learn the growth behaviours and the relevant influence of such buckles, here, we performed a systematic study on the edge stabilities of monolayer films constructed with β-phase P, As, Sb and Bi, respectively. Our theoretical results show that, for free-standing films, the zigzag edge with dangling atoms is the most stable one for bare P, As and Sb and the pristine AC edge is the most stable one for Bi, while the pristine zigzag edge becomes the most stable one for all films if the edge is terminated with hydrogen atoms, both resulting in hexagonal flakes under equilibrium growth conditions. Buckles show no apparent influence on the edge stabilities in free-standing films while play a significant role in cases considering underlying metal substrates. Such an influence can be attributed to the charge transfer difference between the lower/upper β-G15 atoms and underlying substrates, which may eventually determine the growth mechanism and morphologies of 2D β-G15 films. Detailed growth kinetics and properties were also discussed based on the first-principles results. The understanding of these fundamental principles should provide useful information for guiding the synthesis of β-G15 films and other 2D materials.
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Affiliation(s)
- Ruiqi Zhao
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China.
| | - Xue Wei
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China.
| | - Hongxia Zhu
- Henan Key Laboratory of Materials on Deep-Earth Engineering, School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China.
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High-Performance Boron Nitride Based Membranes for Water Purification. NANOMATERIALS 2022; 12:nano12030473. [PMID: 35159818 PMCID: PMC8838071 DOI: 10.3390/nano12030473] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2021] [Revised: 01/14/2022] [Accepted: 01/25/2022] [Indexed: 01/22/2023]
Abstract
In recent years, nanotechnology-based approaches have resulted in the development of new alternative sustainable technologies for water purification. Two-dimensional (2D) nanomaterials are an emerging class of materials for nanofiltration membranes. In this work, we report the production, characterisation and testing of a promising nanofiltration membrane made from water-exfoliated boron nitride (BN) 2D nanosheets. The membranes have been tested for water purification and removal of typical water-soluble dyes such as methyl orange, methylene blue and Evans blue, with the water-exfoliated BN membranes achieving retention values close to 100%. In addition, we compared the performance of membranes made from water-exfoliated BN with those produced from BN using sonication-assisted liquid exfoliation in selected organic solvents such as 2-propanol and N-methyl-2-pyrrolidone. It was found that membranes from the water-exfoliated BN showed superior performance. We believe this research opens up a unique opportunity for the development of new high-performance environmentally friendly membranes for nanofiltration and new sustainable separation technologies.
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Palomino-Asencio L, García-Hernández E, Chigo-Anota E. Lauric acid adsorption on specific boron nitride fullerenes and the chemical influence of homonuclear bonds: a theoretical approach. NEW J CHEM 2022. [DOI: 10.1039/d2nj01379g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
Abstract
The efficiency of boron nitride fullerenes as lauric acid transporters, seen from a density functional theory point of view.
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Affiliation(s)
- Luz Palomino-Asencio
- Benemérita Universidad Autónoma de Puebla, Facultad de Ingeniería Química, Puebla, Mexico
| | - Erwin García-Hernández
- Tecnológico Nacional de México Campus Zacapoaxtla, Subdirección de Posgrado e Investigación, División de Mecatrónica, Zacapoaxtla Puebla, Mexico
| | - Ernesto Chigo-Anota
- Benemérita Universidad Autónoma de Puebla, Facultad de Ingeniería Química, Puebla, Mexico
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39
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Zhu H, Zhao R. Isolated Ni atoms induced edge stabilities and equilibrium shapes of CVD-prepared hexagonal boron nitride on the Ni(111) surface. NEW J CHEM 2022. [DOI: 10.1039/d2nj03735a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The edge stability and equilibrium shape of h-BN passivated by isolated Ni atoms are revealed by density functional theory simulations.
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Affiliation(s)
- Hongxia Zhu
- School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China
| | - Ruiqi Zhao
- School of Materials Science and Engineering, Henan Polytechnic University, Henan 454003, China
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40
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Abstract
Chemical vapor deposition (CVD) is a promising approach for the controllable synthesis of two-dimensional (2D) materials. Many studies have demonstrated that the morphology and structure of 2D materials are highly dependent on growth substrates. Hence, the choice of growth substrates is essential to achieve the precise control of CVD growth. Noble metal substrates have attracted enormous interest owing to the high catalytic activity and rich surface morphology for 2D material growth. In this review, we introduce recent progress in noble metals as substrates for the controllable growth of 2D materials. The underlying growth mechanism and substrate designs of noble metals based on their unique features are thoroughly discussed. In the end, we outline the advantages and challenges of using noble metal substrates and prospect the possible approaches to extend the uses of noble metal substrates for 2D material growth and enhance the structural controllability of the grown materials.
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Affiliation(s)
- Yang Gao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yang Liu
- Cyber Security Research Centre, Nanyang Technological University, Singapore 639798, Singapore.,School of Computer Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.,CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore.,School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
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41
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Waleska NJ, Düll F, Bachmann P, Hemauer F, Steinhauer J, Papp C. Reactivity and Passivation of Fe Nanoclusters on h-BN/Rh(111). Chemistry 2021; 27:17087-17093. [PMID: 34342077 PMCID: PMC9290904 DOI: 10.1002/chem.202102590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/16/2021] [Indexed: 12/02/2022]
Abstract
The reactivity of iron nanocluster arrays on h-BN/Rh(111) was studied using in situ high-resolution X-ray photoelectron spectroscopy. The morphology and reactivity of the iron nanoclusters (Fe-NCs) were investigated by CO adsorption. On-top and hollow/edge sites were determined to be the available adsorption sites on the as-prepared Fe-NCs and CO dissociation was observed at 300 K. C- and O-precovered Fe-NCs showed no catalytic activity towards CO dissociation because the hollow/edge sites were blocked by the C and O atoms. Therefore, these adsorption sites were identified to be the most active sites of the Fe-NCs.
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Affiliation(s)
- Natalie J. Waleska
- Lehrstuhl für Physikalische Chemie IIUniversität Erlangen-NürnbergEgerlandstr. 391058ErlangenGermany
| | - Fabian Düll
- Lehrstuhl für Physikalische Chemie IIUniversität Erlangen-NürnbergEgerlandstr. 391058ErlangenGermany
| | - Philipp Bachmann
- Lehrstuhl für Physikalische Chemie IIUniversität Erlangen-NürnbergEgerlandstr. 391058ErlangenGermany
| | - Felix Hemauer
- Lehrstuhl für Physikalische Chemie IIUniversität Erlangen-NürnbergEgerlandstr. 391058ErlangenGermany
| | - Johann Steinhauer
- Lehrstuhl für Physikalische Chemie IIUniversität Erlangen-NürnbergEgerlandstr. 391058ErlangenGermany
| | - Christian Papp
- Lehrstuhl für Physikalische Chemie IIUniversität Erlangen-NürnbergEgerlandstr. 391058ErlangenGermany
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42
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Kim Y, Kang S, Kang D, Lee KR, Song CK, Sung J, Kim JS, Lee H, Park J, Yi J. Single‐Phase Formation of Rh
2
O
3
Nanoparticles on h‐BN Support for Highly Controlled Methane Partial Oxidation to Syngas. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202110292] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Younhwa Kim
- School of Chemical and Biological Engineering, and Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea
| | - Sungsu Kang
- School of Chemical and Biological Engineering, and Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea
- Center for Nanoparticle Research Institute of Basic Science (IBS) Seoul 08826 Republic of Korea
| | - Dohun Kang
- School of Chemical and Biological Engineering, and Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea
| | - Kyung Rok Lee
- School of Chemical and Biological Engineering, and Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea
| | - Chyan Kyung Song
- School of Chemical and Biological Engineering, and Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea
| | - Jongbaek Sung
- School of Chemical and Biological Engineering, and Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea
| | - Ji Soo Kim
- School of Chemical and Biological Engineering, and Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea
| | - Hyunjoo Lee
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology Daejeon 305-701 Republic of Korea
| | - Jungwon Park
- School of Chemical and Biological Engineering, and Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea
- Center for Nanoparticle Research Institute of Basic Science (IBS) Seoul 08826 Republic of Korea
| | - Jongheop Yi
- School of Chemical and Biological Engineering, and Institute of Chemical Processes Seoul National University Seoul 08826 Republic of Korea
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43
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Hwang JH, Shrestha BK, Kim JH, Seo TH, Park CH, Kim MJ. Nanoscale layer of a minimized defect area of graphene and hexagonal boron nitride on copper for excellent anti-corrosion activity. NANOTECHNOLOGY 2021; 33:055601. [PMID: 34673562 DOI: 10.1088/1361-6528/ac31e9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2021] [Accepted: 10/21/2021] [Indexed: 06/13/2023]
Abstract
In this work, we synthesized a monolayer of graphene and hexagonal boron nitride (hBN) using chemical vapor deposition. The physicochemical and electrochemical properties of the materials were evaluated to determine their morphology. High-purity materials and their atomic-scale coating on copper (Cu) foil were employed to prevent fast degradation rate. The hexagonal two-dimensional (2D) atomic structures of the as-prepared materials were assessed to derive their best anti-corrosion behavior. The material prepared under optimized conditions included edge-defect-free graphene nanosheets (∼0.0034μm2) and hBN (∼0.0038μm2) per unit area of 1μm2. The coating of each material on the Cu surface significantly reduced the corrosion rate, which was ∼2.44 × 10-2/year and 6.57 × 10-3/year for graphene/Cu and hBN/Cu, respectively. Importantly, the corrosion rate of Cu was approximately 3-fold lower after coating with hBN relative to that of graphene/Cu. This approach suggests that the surface coating of Cu using cost-effective, eco-friendly, and the most abundant materials in nature is of interest for developing marine anti-corrosion micro-electronic devices and achieving surface modification of pure metals in industrial applications.
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Affiliation(s)
- Jae Hun Hwang
- Department of Bionanosystem Engineering, Graduate School, Jeonbuk National University, Jeonju 561-756, Republic of Korea
- Korea Institute of Interventional Mechanobio Technology (KIMET), Jeonju, 54896, Republic of Korea
| | - Bishnu Kumar Shrestha
- Department of Bionanosystem Engineering, Graduate School, Jeonbuk National University, Jeonju 561-756, Republic of Korea
- Regional Leading Research Center for Nanocarbon-based Energy Materials and Application Technology, Jeonbuk National University, Republic of Korea
| | - Jun Hee Kim
- Korea Institute of Interventional Mechanobio Technology (KIMET), Jeonju, 54896, Republic of Korea
| | - Tae Hoon Seo
- Green Energy & Nano Technology R&D Group, Korea Institute of Industrial Technology, 6, Cheomdangwagi-ro 208beon-gil, Buk-gu, Gwangju 61012, Republic of Korea
| | - Chan Hee Park
- Department of Bionanosystem Engineering, Graduate School, Jeonbuk National University, Jeonju 561-756, Republic of Korea
- Division of Mechanical Design Engineering, Jeonbuk National University, Jeonju 561-756, Republic of Korea
| | - Myung Jong Kim
- Department of Chemistry, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
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44
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Cuxart MG, Seufert K, Chesnyak V, Waqas WA, Robert A, Bocquet ML, Duesberg GS, Sachdev H, Auwärter W. Borophenes made easy. SCIENCE ADVANCES 2021; 7:eabk1490. [PMID: 34731005 PMCID: PMC8565903 DOI: 10.1126/sciadv.abk1490] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/24/2021] [Accepted: 09/15/2021] [Indexed: 06/13/2023]
Abstract
To date, the scalable synthesis of elemental two-dimensional materials beyond graphene still remains elusive. Here, we introduce a versatile chemical vapor deposition (CVD) method to grow borophenes, as well as borophene heterostructures, by selectively using diborane originating from traceable byproducts of borazine. Specifically, metallic borophene polymorphs were successfully synthesized on Ir(111) and Cu(111) single-crystal substrates and conjointly with insulating hexagonal boron nitride (hBN) to form atomically precise lateral borophene-hBN interfaces or vertical van der Waals heterostructures. Thereby, borophene is protected from immediate oxidation by a single hBN overlayer. The ability to synthesize high-quality borophenes with large single-crystalline domains in the micrometer scale by a straight-forward CVD approach opens up opportunities for the study of their fundamental properties and for device incorporation.
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Affiliation(s)
- Marc G. Cuxart
- Physics Department E20, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany
| | - Knud Seufert
- Physics Department E20, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany
| | - Valeria Chesnyak
- Physics Department E20, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany
| | - Wajahat A. Waqas
- Physics Department E20, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany
| | - Anton Robert
- PASTEUR, Département de Chimie, École Normale Supérieure, PSL University, Sorbonne Université, CNRS, 75005 Paris, France
| | - Marie-Laure Bocquet
- PASTEUR, Département de Chimie, École Normale Supérieure, PSL University, Sorbonne Université, CNRS, 75005 Paris, France
| | - Georg S. Duesberg
- Fakultät für Elektrotechnik und Informationstechnik, Institut für Physik EIT-2, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, D-85579 Neubiberg, Germany
| | - Hermann Sachdev
- Fakultät für Elektrotechnik und Informationstechnik, Institut für Physik EIT-2, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, D-85579 Neubiberg, Germany
| | - Willi Auwärter
- Physics Department E20, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany
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45
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Roy S, Zhang X, Puthirath AB, Meiyazhagan A, Bhattacharyya S, Rahman MM, Babu G, Susarla S, Saju SK, Tran MK, Sassi LM, Saadi MASR, Lai J, Sahin O, Sajadi SM, Dharmarajan B, Salpekar D, Chakingal N, Baburaj A, Shuai X, Adumbumkulath A, Miller KA, Gayle JM, Ajnsztajn A, Prasankumar T, Harikrishnan VVJ, Ojha V, Kannan H, Khater AZ, Zhu Z, Iyengar SA, Autreto PADS, Oliveira EF, Gao G, Birdwell AG, Neupane MR, Ivanov TG, Taha-Tijerina J, Yadav RM, Arepalli S, Vajtai R, Ajayan PM. Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101589. [PMID: 34561916 DOI: 10.1002/adma.202101589] [Citation(s) in RCA: 116] [Impact Index Per Article: 38.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2021] [Revised: 05/24/2021] [Indexed: 05/09/2023]
Abstract
Hexagonal boron nitride (h-BN) has emerged as a strong candidate for two-dimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical robustness, thermal stability, and chemical inertness. Super-thin h-BN layers have gained significant attention from the scientific community for many applications, including nanoelectronics, photonics, biomedical, anti-corrosion, and catalysis, among others. This review provides a systematic elaboration of the structural, electrical, mechanical, optical, and thermal properties of h-BN followed by a comprehensive account of state-of-the-art synthesis strategies for 2D h-BN, including chemical exfoliation, chemical, and physical vapor deposition, and other methods that have been successfully developed in recent years. It further elaborates a wide variety of processing routes developed for doping, substitution, functionalization, and combination with other materials to form heterostructures. Based on the extraordinary properties and thermal-mechanical-chemical stability of 2D h-BN, various potential applications of these structures are described.
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Affiliation(s)
- Soumyabrata Roy
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Anand B Puthirath
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ashokkumar Meiyazhagan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sohini Bhattacharyya
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Muhammad M Rahman
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ganguli Babu
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sandhya Susarla
- Materials Science Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA, 94720, USA
| | - Sreehari K Saju
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Mai Kim Tran
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Lucas M Sassi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - M A S R Saadi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Jiawei Lai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Onur Sahin
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Seyed Mohammad Sajadi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Bhuvaneswari Dharmarajan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Devashish Salpekar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Nithya Chakingal
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Abhijit Baburaj
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Xinting Shuai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Aparna Adumbumkulath
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Kristen A Miller
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Jessica M Gayle
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Alec Ajnsztajn
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Thibeorchews Prasankumar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | | | - Ved Ojha
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Harikishan Kannan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ali Zein Khater
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Zhenwei Zhu
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sathvik Ajay Iyengar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Pedro Alves da Silva Autreto
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Center for Natural and Human Sciences, Federal University of ABC (UFABC), Av. Dos Estados, 5001-Bangú, Santo André - SP, Santo André, 09210-580, Brazil
| | - Eliezer Fernando Oliveira
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Applied Physics Department, State University of Campinas - UNICAMP, Campinas, São Paulo, 13083-859, Brazil
- Center for Computational Engineering and Sciences (CCES), State University of Campinas - UNICAMP, Campinas, São Paulo, 13083-859, Brazil
| | - Guanhui Gao
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - A Glen Birdwell
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Mahesh R Neupane
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Tony G Ivanov
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Jaime Taha-Tijerina
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Engineering Department, Universidad de Monterrey, Av. Ignacio Morones Prieto 4500 Pte., San Pedro Garza Garcí, Monterrey, Nuevo Leon, 66238, Mexico
- Department of Manufacturing and Industrial Engineering, University of Texas Rio Grande Valley, Brownsville, TX, 78520, USA
| | - Ram Manohar Yadav
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Department of Physics, VSSD College, Kanpur, Uttar Pradesh, 208002, India
| | - Sivaram Arepalli
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
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Zhang Y, Niu H, Liyun W, Wang N, Xu T, Zhou Z, Xie Y, Wang H, He Q, Zhang K, Yao Y. Fabrication of thermally conductive polymer composites based on hexagonal boron nitride: recent progresses and prospects. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/ac2f09] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Abstract
Abstract
Hexagonal boron nitride (h-BN) and its nanomaterials are among the most promising candidates for use in thermal management applications because of their high thermal conductivity, thermal stability, and good electric insulation, and when used as the conductive fillers, they enhance the overall properties of polymer composites. In this review, the basic concepts of h-BN are introduced, followed by the synthesis of BN nanotubes and BN nanosheets. Then, various novel methods to fabricate h-BN polymer composites with improved thermally conductive paths are discussed. They can be classified into two categories: dispersion and compatibility reinforced and structure formation. In addition, the thermal conducting mechanisms of h-BN composites are proposed. Finally, the advantages and limitations of aforementioned strategies are summarized.
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47
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Helal MA, El-Sayed HM, Maarouf AA, Fadlallah MM. Metal dichalcogenide nanomeshes: structural, electronic and magnetic properties. Phys Chem Chem Phys 2021; 23:21183-21195. [PMID: 34528957 DOI: 10.1039/d1cp03743a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Motivated by the successful preparation of two-dimensional transition metal dichalcogenide (2D-TMD) nanomeshes in the last three years, we use density functional theory (DFT) to study the structural stability, mechanical, magnetic, and electronic properties of porous 2H-MoX2 (X = S, Se and Te) without and with pore passivation. We consider structures with multiple, systematically created pores. The molecular dynamics simulations and cohesive energy calculations showed the stability of the 2D-TMD nanomeshes, with larger stability for those with smaller pores. The lattice undergoes some deformations to accommodate the pore energetically, and as the pore size increases Young's modulus decreases. In most cases, the missing metal atoms disrupt the spin states' even population, resulting in some nanomeshes becoming magnetic. The electronic gaps of the MoX2 nanomesh systems are diminished because of the emergence of pore-edge localized mid-gap metal 4d states in the spin-polarized spectrum, making some systems half-metallic. The oxygen passivation of the pore edges of 2D-TMD nanomeshes restores the even population of spin states, and makes those systems metallic. Our results can be used in different applications such as spintronics, ion chelation, and molecular sensing applications.
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Affiliation(s)
- Mohamed A Helal
- Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566, Egypt
| | - H M El-Sayed
- Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566, Egypt
| | - Ahmed A Maarouf
- Department of Physics, Institute for Research and Medical Consultations, Imam Abdulrahman Bin Faisal University, Dammam 31441, Saudi Arabia.
| | - Mohamed M Fadlallah
- Department of Physics, Faculty of Science, Benha University, Benha 13518, Egypt.
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48
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Marie Freiberger E, Späth F, Bauer U, Düll F, Bachmann P, Steinhauer J, Hemauer F, Waleska NJ, Schwaab V, Steinrück HP, Papp C. Selective Oxygen and Hydrogen Functionalization of the h-BN/Rh(111) Nanomesh. Chemistry 2021; 27:13172-13180. [PMID: 34254706 DOI: 10.1002/chem.202101946] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2021] [Indexed: 11/05/2022]
Abstract
We present detailed studies on the covalent adsorption of molecular oxygen and atomic hydrogen on the hexagonal boron nitride (h-BN) nanomesh on Rh(111). The functionalization of this two-dimensional (2D) material was investigated under ultra-high vacuum conditions using synchrotron radiation-based in situ high-resolution X-ray photoelectron spectroscopy, temperature-programmed X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. We are able to provide a deep insight into the adsorption behavior and thermal stability of oxygen and hydrogen on h-BN/Rh(111). Oxygen functionalization was achieved via a supersonic molecular beam while hydrogen functionalization was realized using an atomic hydrogen source. Adsorption of the respective species was observed to occur selectively in the pores of h-BN leading to spatially defined modification of the 2D layer. The adsorption of the observed molecular oxygen species was found to be an activated process that requires high-energy oxygen molecules. Upon heating to 700 K, oxygen functionalization was observed to be almost reversible except for small amounts of boron oxides evolving due to the reaction of oxygen with the 2D material. Hydrogen functionalization of h-BN/Rh(111) was fully reversed upon heating to about 640 K.
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Affiliation(s)
- Eva Marie Freiberger
- Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
| | - Florian Späth
- Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
| | - Udo Bauer
- Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
| | - Fabian Düll
- Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
| | - Philipp Bachmann
- Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
| | - Johann Steinhauer
- Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
| | - Felix Hemauer
- Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
| | - Natalie J Waleska
- Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
| | - Valentin Schwaab
- Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
| | - Hans-Peter Steinrück
- Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
| | - Christian Papp
- Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
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49
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Kim Y, Kang S, Kang D, Lee KR, Song CK, Sung J, Kim JS, Lee H, Park J, Yi J. Single-Phase Formation of Rh 2 O 3 Nanoparticles on h-BN Support for Highly Controlled Methane Partial Oxidation to Syngas. Angew Chem Int Ed Engl 2021; 60:25411-25418. [PMID: 34523792 DOI: 10.1002/anie.202110292] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2021] [Indexed: 11/11/2022]
Abstract
Single-phase formation of active metal oxides on supports has been vigorously pursued in many catalytic applications to suppress undesired reactions and to determine direct structure-property relationships. However, this is difficult to achieve in nanoscale range because the effect of non-uniform metal-support interfaces becomes dominant in the overall catalyst growth, leading to the nucleation of various metastable oxides. Herein, we develop a supported single-phase corundum-Rh2 O3 (I) nanocatalyst by utilizing controlled interaction between metal oxide and h-BN support. Atomic-resolution electron microscopy and first-principle calculation reveal that single-phase formation occurs via uniform and preferential attachment of Rh2 O3 (I) (110) seed planes on well-defined h-BN surface after decomposition of rhodium precursor. By utilizing the Rh/h-BN catalyst in methane partial oxidation, syngas is successfully produced solely following the direct route with keeping a H2 /CO ratio of 2, which makes it ideal for most downstream chemical processes.
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Affiliation(s)
- Younhwa Kim
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sungsu Kang
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea.,Center for Nanoparticle Research, Institute of Basic Science (IBS), Seoul, 08826, Republic of Korea
| | - Dohun Kang
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kyung Rok Lee
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
| | - Chyan Kyung Song
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jongbaek Sung
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
| | - Ji Soo Kim
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hyunjoo Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Republic of Korea
| | - Jungwon Park
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea.,Center for Nanoparticle Research, Institute of Basic Science (IBS), Seoul, 08826, Republic of Korea
| | - Jongheop Yi
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
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50
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Ali K, Fernández L, Kherelden MA, Makarova AA, Píš I, Bondino F, Lawrence J, de Oteyza DG, Usachov DY, Vyalikh DV, García de Abajo FJ, El‐Fattah ZMA, Ortega JE, Schiller F. Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2101455. [PMID: 34293238 PMCID: PMC8425884 DOI: 10.1002/advs.202101455] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/09/2021] [Revised: 05/25/2021] [Indexed: 06/13/2023]
Abstract
Monolayer hexagonal boron nitride (hBN) is attracting considerable attention because of its potential applications in areas such as nano- and opto-electronics, quantum optics and nanomagnetism. However, the implementation of such functional hBN demands precise lateral nanostructuration and integration with other two-dimensional materials, and hence, novel routes of synthesis beyond exfoliation. Here, a disruptive approach is demonstrated, namely, imprinting the lateral pattern of an atomically stepped one-dimensional template into a hBN monolayer. Specifically, hBN is epitaxially grown on vicinal Rhodium (Rh) surfaces using a Rh curved crystal for a systematic exploration, which produces a periodically textured, nanostriped hBN carpet that coats Rh(111)-oriented terraces and lattice-matched Rh(337) facets with tunable width. The electronic structure reveals a nanoscale periodic modulation of the hBN atomic potential that leads to an effective lateral semiconductor multi-stripe. The potential of such atomically thin hBN heterostructure for future applications is discussed.
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Affiliation(s)
- Khadiza Ali
- Centro de Física de Materiales CSIC/UPV‐EHU‐Materials Physics CenterSan SebastiánE‐20018Spain
| | - Laura Fernández
- Centro de Física de Materiales CSIC/UPV‐EHU‐Materials Physics CenterSan SebastiánE‐20018Spain
- Universidad del País VascoDpto. Física AplicadaSan SebastiánE‐20018Spain
| | | | | | - Igor Píš
- IOM‐CNRLaboratorio TASCTriesteI‐34149Italy
- Elettra ‐ Sincrotrone Trieste S.C.p.A.TriesteI‐34149Italy
| | | | - James Lawrence
- Donostia International Physics CenterSan SebastiánE‐20018Spain
| | | | | | - Denis V. Vyalikh
- Donostia International Physics CenterSan SebastiánE‐20018Spain
- IkerbasqueBasque Foundation for ScienceBasque CountryBilbao48013Spain
| | - F. Javier García de Abajo
- ICFO‐Institut de Ciencies FotoniquesThe Barcelona Institute of Science and TechnologyBarcelona08860Spain
- ICREA‐Institució Catalana de Recerca i Estudis AvançatsPasseig Lluís Companys 23Barcelona08010Spain
| | | | - J. Enrique Ortega
- Centro de Física de Materiales CSIC/UPV‐EHU‐Materials Physics CenterSan SebastiánE‐20018Spain
- Universidad del País VascoDpto. Física AplicadaSan SebastiánE‐20018Spain
- Donostia International Physics CenterSan SebastiánE‐20018Spain
| | - Frederik Schiller
- Centro de Física de Materiales CSIC/UPV‐EHU‐Materials Physics CenterSan SebastiánE‐20018Spain
- Donostia International Physics CenterSan SebastiánE‐20018Spain
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