Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque

Spin-polarized electrons can move a ferromagnetic domain wall through the transfer of spin angular momentum when current flows in a magnetic nanowire. Such current induced control of a domain wall is of significant interest due to its potential application for low power ultra high-density data storage. In previous reports, it has been observed that the motion of the domain wall always happens parallel to the current flow – either in the same or opposite direction depending on the specific nature of the interaction. In contrast, here we demonstrate deterministic control of a ferromagnetic domain wall orthogonal to current flow by exploiting the spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO heterostructure in presence of an in-plane magnetic field. Reversing the polarity of either the current flow or the in-plane field is found to reverse the direction of the domain wall motion. Notably, such orthogonal motion with respect to current flow is not possible from traditional spin transfer torque driven domain wall propagation even in presence of an external magnetic field. Therefore the domain wall motion happens purely due to spin orbit torque. These results represent a completely new degree of freedom in current induced control of a ferromagnetic domain wall.

Quasiparticle-mediated spin Hall effect in a superconductor

In some materials the competition between superconductivity and magnetism brings about a variety of unique phenomena such as the coexistence of superconductivity and magnetism in heavy-fermion superconductors or spin-triplet supercurrent in ferromagnetic Josephson junctions. Recent observations of spin-charge separation in a lateral spin valve with a superconductor evidence that these remarkable properties are applicable to spintronics, although there are still few works exploring this possibility. Here, we report the experimental observation of the quasiparticle-mediated spin Hall effect in a superconductor, NbN. This compound exhibits the inverse spin Hall (ISH) effect even below the superconducting transition temperature. Surprisingly, the ISH signal increases by more than 2,000 times compared with that in the normal state with a decrease of the injected spin current. The effect disappears when the distance between the voltage probes becomes larger than the charge imbalance length, corroborating that the huge ISH signals measured are mediated by quasiparticles.

Blowing magnetic skyrmion bubbles

The formation of soap bubbles from thin films is accompanied by topological transitions. Here we show how a magnetic topological structure, a skyrmion bubble, can be generated in a solid-state system in a similar manner. Using an inhomogeneous in-plane current in a system with broken inversion symmetry, we experimentally “blow” magnetic skyrmion bubbles from a geometrical constriction. The presence of a spatially divergent spin-orbit torque gives rise to instabilities of the magnetic domain structures that are reminiscent of Rayleigh-Plateau instabilities in fluid flows. We determine a phase diagram for skyrmion formation and reveal the efficient manipulation of these dynamically created skyrmions, including depinning and motion. The demonstrated current-driven transformation from stripe domains to magnetic skyrmion bubbles could lead to progress in skyrmion-based spintronics.

Modular Approach to Spintronics

There has been enormous progress in the last two decades, effectively combining spintronics and magnetics into a powerful force that is shaping the field of memory devices. New materials and phenomena continue to be discovered at an impressive rate, providing an ever-increasing set of building blocks that could be exploited in designing transistor-like functional devices of the future. The objective of this paper is to provide a quantitative foundation for this building block approach, so that new discoveries can be integrated into functional device concepts, quickly analyzed and critically evaluated. Through careful benchmarking against available theory and experiment we establish a set of elemental modules representing diverse materials and phenomena. These elemental modules can be integrated seamlessly to model composite devices involving both spintronic and nanomagnetic phenomena. We envision the library of modules to evolve both by incorporating new modules and by improving existing modules as the field progresses. The primary contribution of this paper is to establish the ground rules or protocols for a modular approach that can build a lasting bridge between materials scientists and circuit designers in the field of spintronics and nanomagnetics.

Indication of Complete Spin Filtering in Atomic-Scale Nickel Oxide

Generating highly spin-polarized currents at the nanoscale is essential for spin current manipulations and spintronic applications. We find indications for up to 100% spin-polarized currents across nickel oxide atomic junctions formed between two nickel electrodes. The degree of spin polarization is probed by analyzing the shot noise resulting from the discrete statistics of spin-polarized electron transport. We show that spin filtering can be significantly enhanced by local chemical modifications at the single-atom level. This approach paves the way for effective manipulations of spin transport at the fundamental limit of miniaturization.

Universal chiral-triggered magnetization switching in confined nanodots

Spin orbit interactions are rapidly emerging as the key for enabling efficient current-controlled spintronic devices. Much work has focused on the role of spin-orbit coupling at heavy metal/ferromagnet interfaces in generating current-induced spin-orbit torques. However, the strong influence of the spin-orbit-derived Dzyaloshinskii-Moriya interaction (DMI) on spin textures in these materials is now becoming apparent. Recent reports suggest DMI-stabilized homochiral domain walls (DWs) can be driven with high efficiency by spin torque from the spin Hall effect. However, the influence of the DMI on the current-induced magnetization switching has not been explored nor is yet well-understood, due in part to the difficulty of disentangling spin torques and spin textures in nano-sized confined samples. Here we study the magnetization reversal of perpendicular magnetized ultrathin dots, and show that the switching mechanism is strongly influenced by the DMI, which promotes a universal chiral non-uniform reversal, even for small samples at the nanoscale. We show that ultrafast current-induced and field-induced magnetization switching consists on local magnetization reversal with domain wall nucleation followed by its propagation along the sample. These findings, not seen in conventional materials, provide essential insights for understanding and exploiting chiral magnetism for emerging spintronics applications.

Emergence of spin-orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide

The desire for higher information capacities drives the components of electronic devices to ever smaller dimensions so that device properties are determined increasingly more by interfaces than by the bulk structure of the constituent materials. Spintronic devices, especially, benefit from the presence of interfaces—the reduced structural symmetry creates emergent spin–orbit fields that offer novel possibilities to control device functionalities. But where does the bulk end, and the interface begin? Here we trace the interface-to-bulk transition, and follow the emergence of the interfacial spin–orbit fields, in the conducting states of a few monolayers of iron on top of gallium arsenide. We observe the transition from the interface- to bulk-induced lateral crystalline magnetoanisotropy, each having a characteristic symmetry pattern, as the epitaxially grown iron channel increases from four to eight monolayers. Setting the upper limit on the width of the interface-imprinted conducting channel is an important step towards an active control of interfacial spin–orbit fields.

Broken symmetry at material interfaces allows for novel spintronic functionality via emergent spin–orbit effects. Here, Hupfauer et al. follow the interface-to-bulk transition of ultra-thin epitaxial iron films on gallium arsenide via anisotropic magnetoresistance measurements and first-principle calculations.

Thermoelectric Signal Enhancement by Reconciling the Spin Seebeck and Anomalous Nernst Effects in Ferromagnet/Non-magnet Multilayers

The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control of electric and thermal conductivities, which may further remove obstacles for this technology to be realized. The thermoelectricity in FM/non-magnet (NM) heterostructures using an optical heating source is studied as a function of NM materials and a number of multilayers. It is observed that the overall thermoelectric signal in those structures which is contributed by spin Seebeck effect and anomalous Nernst effect (ANE) is enhanced by a proper selection of NM materials with a spin Hall angle that matches to the sign of the ANE. Moreover, by an increase of the number of multilayer, the thermoelectric voltage is enlarged further and the device resistance is reduced, simultaneously. The experimental observation of the improvement of thermoelectric properties may pave the way for the realization of magnetic-(or spin-) based thermoelectric devices.

Chiral tunneling of topological states: towards the efficient generation of spin current using spin-momentum locking

We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D topological insulator (TI). Our calculations show that the chiral tunneling across a TI pn junction allows normally incident electrons to transmit, while the rest are reflected with their spins flipped due to spin-momentum locking. The net result is that the spin current is enhanced while the dissipative charge current is simultaneously suppressed, leading to an extremely large, gate-tunable spin-to-charge current ratio (∼20) at the reflected end. At the transmitted end, the ratio stays close to 1 and the electrons are completely spin polarized.

Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films

Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.

Synchronization of spin Hall nano-oscillators to external microwave signals

Recently, a novel type of spin-torque nano-oscillators driven by pure spin current generated via the spin Hall effect was demonstrated. Here we report the study of the effects of external microwave signals on these oscillators. Our results show that they can be efficiently synchronized by applying a microwave signal at approximately twice the frequency of the auto-oscillation, which opens additional possibilities for the development of novel spintronic devices. We find that the synchronization exhibits a threshold determined by magnetic fluctuations pumped above their thermal level by the spin current, and is significantly influenced by the nonlinear self-localized nature of the auto-oscillatory mode.

Spin-orbit-torque engineering via oxygen manipulation

Spin transfer torques allow the electrical manipulation of magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to spin-orbit torques, which are a more powerful tool for controlling magnetization and can enrich device functionalities. The engineering of spin-orbit torques, based mostly on the spin Hall effect, is being intensely pursued. Here, we report that the oxidation of spin-orbit-torque devices triggers a new mechanism of spin-orbit torque, which is about two times stronger than that based on the spin Hall effect. We thus introduce a way to engineer spin-orbit torques via oxygen manipulation. Combined with electrical gating of the oxygen level, our findings may also pave the way towards reconfigurable logic devices.

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

Tunable giant spin hall conductivities in a strong spin-orbit semimetal: Bi(1-x) Sb(x)

Intrinsic spin Hall conductivities are calculated for strong spin-orbit Bi(1-x)Sb(x) semimetals, from the Kubo formula and using Berry curvatures evaluated throughout the Brillouin zone from a tight-binding Hamiltonian. Nearly crossing bands with strong spin-orbit interaction generate giant spin Hall conductivities in these materials, ranging from 474 (ℏ/e)(Ω  cm)^{-1} for bismuth to 96 (ℏ/e)(Ω  cm)^{-1} for antimony; the value for bismuth is more than twice that of platinum. The large spin Hall conductivities persist for alloy compositions corresponding to a three-dimensional topological insulator state, such as Bi(0.83)Sb(0.17). The spin Hall conductivity could be changed by a factor of 5 for doped Bi, or for Bi(0.83)Sb(0.17), by changing the chemical potential by 0.5 eV, suggesting the potential for doping or voltage tuned spin Hall current.

Control of magnetism by electric fields

The electrical manipulation of magnetism and magnetic properties has been achieved across a number of different material systems. For example, applying an electric field to a ferromagnetic material through an insulator alters its charge-carrier population. In the case of thin films of ferromagnetic semiconductors, this change in carrier density in turn affects the magnetic exchange interaction and magnetic anisotropy; in ferromagnetic metals, it instead changes the Fermi level position at the interface that governs the magnetic anisotropy of the metal. In multiferroics, an applied electric field couples with the magnetization through electrical polarization. This Review summarizes the experimental progress made in the electrical manipulation of magnetization in such materials, discusses our current understanding of the mechanisms, and finally presents the future prospects of the field.

Improved magnetic damping in CoFeB|MgO with an N-doped Ta underlayer investigated using the Brillouin light scattering technique

We study the magnetic inhomogeneity originating from interfacial roughness in ultrathin Ta(N)|CoFeB|MgO heterostructures using Brillouin light scattering and observed a significantly reduced magnetic inhomogeneity and damping by N-doping in Ta underlayer.

Gilbert damping in noncollinear ferromagnets

The precession and damping of a collinear magnetization displaced from its equilibrium are well described by the Landau-Lifshitz-Gilbert equation. The theoretical and experimental complexity of noncollinear magnetizations is such that it is not known how the damping is modified by the noncollinearity. We use first-principles scattering theory to investigate transverse domain walls (DWs) of the important ferromagnetic alloy Ni80Fe20 and show that the damping depends not only on the magnetization texture but also on the specific dynamic modes of Bloch and Néel DWs in ways that were not theoretically predicted. Even in the highly disordered Ni80Fe20 alloy, the damping is found to be remarkably nonlocal.

Deterministic switching of ferromagnetism at room temperature using an electric field

The technological appeal of multiferroics is the ability to control magnetism with electric field. For devices to be useful, such control must be achieved at room temperature. The only single-phase multiferroic material exhibiting unambiguous magnetoelectric coupling at room temperature is BiFeO3 (refs 4 and 5). Its weak ferromagnetism arises from the canting of the antiferromagnetically aligned spins by the Dzyaloshinskii-Moriya (DM) interaction. Prior theory considered the symmetry of the thermodynamic ground state and concluded that direct 180-degree switching of the DM vector by the ferroelectric polarization was forbidden. Instead, we examined the kinetics of the switching process, something not considered previously in theoretical work. Here we show a deterministic reversal of the DM vector and canted moment using an electric field at room temperature. First-principles calculations reveal that the switching kinetics favours a two-step switching process. In each step the DM vector and polarization are coupled and 180-degree deterministic switching of magnetization hence becomes possible, in agreement with experimental observation. We exploit this switching to demonstrate energy-efficient control of a spin-valve device at room temperature. The energy per unit area required is approximately an order of magnitude less than that needed for spin-transfer torque switching. Given that the DM interaction is fundamental to single-phase multiferroics and magnetoelectrics, our results suggest ways to engineer magnetoelectric switching and tailor technologically pertinent functionality for nanometre-scale, low-energy-consumption, non-volatile magnetoelectronics.

Full control of the spin-wave damping in a magnetic insulator using spin-orbit torque

It is demonstrated that the threshold current for damping compensation can be reached in a 5  μm diameter YIG(20  nm)|Pt(7  nm) disk. The demonstration rests upon the measurement of the ferromagnetic resonance linewidth as a function of I(dc) using a magnetic resonance force microscope (MRFM). It is shown that the magnetic losses of spin-wave modes existing in the magnetic insulator can be reduced or enhanced by at least a factor of 5 depending on the polarity and intensity of an in-plane dc current I(dc) flowing through the adjacent normal metal with strong spin-orbit interaction. Complete compensation of the damping of the fundamental mode by spin-orbit torque is reached for a current density of ∼3×10(11)  A·m(-2), in agreement with theoretical predictions. At this critical threshold the MRFM detects a small change of static magnetization, a behavior consistent with the onset of an auto-oscillation regime.

Spin Hall effects in metallic antiferromagnets

We investigate four CuAu-I-type metallic antiferromagnets for their potential as spin current detectors using spin pumping and inverse spin Hall effect. Nontrivial spin Hall effects were observed for FeMn, PdMn, and IrMn while a much higher effect was obtained for PtMn. Using thickness-dependent measurements, we determined the spin diffusion lengths of these materials to be short, on the order of 1 nm. The estimated spin Hall angles of the four materials follow the relationship PtMn>IrMn>PdMn>FeMn, highlighting the correlation between the spin-orbit coupling of nonmagnetic species and the magnitude of the spin Hall effect in their antiferromagnetic alloys. These experiments are compared with first-principles calculations. Engineering the properties of the antiferromagnets as well as their interfaces can pave the way for manipulation of the spin dependent transport properties in antiferromagnet-based spintronics.

A strategy for the design of skyrmion racetrack memories

Magnetic storage based on racetrack memory is very promising for the design of ultra-dense, low-cost and low-power storage technology. Information can be coded in a magnetic region between two domain walls or, as predicted recently, in topological magnetic objects known as skyrmions. Here, we show the technological advantages and limitations of using Bloch and Néel skyrmions manipulated by spin current generated within the ferromagnet or via the spin-Hall effect arising from a non-magnetic heavy metal underlayer. We found that the Néel skyrmion moved by the spin-Hall effect is a very promising strategy for technological implementation of the next generation of skyrmion racetrack memories (zero field, high thermal stability, and ultra-dense storage). We employed micromagnetics reinforced with an analytical formulation of skyrmion dynamics that we developed from the Thiele equation. We identified that the excitation, at high currents, of a breathing mode of the skyrmion limits the maximal velocity of the memory.

Phase-sensitive detection of spin pumping via the ac inverse spin Hall effect

We use a phase-sensitive, quantitative technique to separate inductive and ac inverse spin Hall effect (ISHE) voltages observed in Ni(81)Fe(19)/normal metal multilayers under the condition of ferromagnetic resonance. For Ni(81)Fe(19)/Pt thin film bilayers and at microwave frequencies from 7 to 20 GHz, we observe an ac ISHE magnitude that is much larger than that expected from the dc spin Hall angle Θ(SH)(Pt) = 0.1. Furthermore, at these frequencies, we find an unexpected, ≈ 110° phase of the ac ISHE signal relative to the in-plane component of the resonant magnetization precession. We attribute our findings to a dominant intrinsic ac ISHE in Pt.

Relativistic Néel-order fields induced by electrical current in antiferromagnets

We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intraband and to the intrinsic interband spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we consider bulk Mn(2)Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modeled by a Rashba spin-orbit coupling. We propose an antiferromagnetic memory device with electrical writing and reading.

Spin-orbit torque in a bulk perpendicular magnetic anisotropy Pd/FePd/MgO system

Spin-orbit torques, including the Rashba and spin Hall effects, have been widely observed and investigated in various systems. Since interesting spin-orbit torque (SOT) arises at the interface between heavy nonmagnetic metals and ferromagnetic metals, most studies have focused on the ultra-thin ferromagnetic layer with interface perpendicular magnetic anisotropy. Here, we measured the effective longitudinal and transverse fields of bulk perpendicular magnetic anisotropy Pd/FePd (1.54 to 2.43 nm)/MgO systems using harmonic methods with careful correction procedures. We found that in our range of thicknesses, the effective longitudinal and transverse fields are five to ten times larger than those reported in interface perpendicular magnetic anisotropy systems. The observed magnitude and thickness dependence of the effective fields suggest that the SOT do not have a purely interfacial origin in our samples.

Near surface magnetic domain observation with ultra-high resolution

Near field magnetic force microscopy (NF-MFM) has been demonstrated to locally observe the magnetic fine structures in nanosized recording bits at an operating distance of 1 nm. The nanoscale magnetic domains, the polarity of surface magnetic charges, as well as the 3D magnetic fields leaking from the bits are investigated via NF-MFM with a soft NiFe tip. A Fourier analysis of the images suggests that the magnetic moment can be determined locally in a volume as small as 5 nanometers. The NF-MFM is crucial to the analysis of surface magnetic features and allows a wide range of future applications, for example, in data storage and biomedicine.

Electric control of the spin Hall effect by intervalley transitions

Controlling spin-related material properties by electronic means is a key step towards future spintronic technologies. The spin Hall effect (SHE) has become increasingly important for generating, detecting and using spin currents, but its strength--quantified in terms of the SHE angle--is ultimately fixed by the magnitude of the spin-orbit coupling (SOC) present for any given material system. However, if the electrons generating the SHE can be controlled by populating different areas (valleys) of the electronic structure with different SOC characteristic the SHE angle can be tuned directly within a single sample. Here we report the manipulation of the SHE in bulk GaAs at room temperature by means of an electrical intervalley transition induced in the conduction band. The spin Hall angle was determined by measuring an electromotive force driven by photoexcited spin-polarized electrons drifting through GaAs Hall bars. By controlling electron populations in different (Γ and L) valleys, we manipulated the angle from 0.0005 to 0.02. This change by a factor of 40 is unprecedented in GaAs and the highest value achieved is comparable to that of the heavy metal Pt.

Two-dimensional TaSe2 metallic crystals: spin-orbit scattering length and breakdown current density

We have determined the spin-orbit scattering length of two-dimensional layered 2H-TaSe2 metallic crystals by detailed characterization of the weak antilocalization phenomena in this strong spin-orbit interaction material. By fitting the observed magneto-conductivity, the spin-orbit scattering length for 2H-TaSe2 is determined to be 17 nm in the few-layer films. This small spin-orbit scattering length is comparable to that of Pt, which is widely used to study the spin Hall effect, and indicates the potential of TaSe2 for use in spin Hall effect devices. A material must also support large charge currents in addition to strong spin-orbit coupling to achieve spin-transfer-torque via the spin Hall effect. Therefore, we have characterized the room temperature breakdown current density of TaSe2 in air, where the best breakdown current density reaches 3.7 × 10(7) A/cm(2). This large breakdown current further indicates the potential of TaSe2 for use in spin-torque devices and two-dimensional device interconnect applications.

Longitudinal spin Seebeck effect: from fundamentals to applications

The spin Seebeck effect refers to the generation of spin voltage as a result of a temperature gradient in ferromagnetic or ferrimagnetic materials. When a conductor is attached to a magnet under a temperature gradient, the thermally generated spin voltage in the magnet injects a spin current into the conductor, which in turn produces electric voltage owing to the spin-orbit interaction. The spin Seebeck effect is of increasing importance in spintronics, since it enables direct generation of a spin current from heat and appears in a variety of magnets ranging from metals and semiconductors to insulators. Recent studies on the spin Seebeck effect have been conducted mainly in paramagnetic metal/ferrimagnetic insulator junction systems in the longitudinal configuration in which a spin current flowing parallel to the temperature gradient is measured. This 'longitudinal spin Seebeck effect' (LSSE) has been observed in various sample systems and exclusively established by separating the spin-current contribution from extrinsic artefacts, such as conventional thermoelectric and magnetic proximity effects. The LSSE in insulators also provides a novel and versatile pathway to thermoelectric generation in combination of the inverse spin-Hall effects. In this paper, we review basic experiments on the LSSE and discuss its potential thermoelectric applications with several demonstrations.

Ultrafast spin-transfer torque driven by femtosecond pulsed-laser excitation

Spin currents have an important role in many proposed spintronic devices, as they govern the switching process of magnetic bits in random access memories or drive domain wall motion in magnetic shift registers. The generation of these spin currents has to be fast and energy efficient for realization of these envisioned devices. Recently it has been shown that femtosecond pulsed-laser excitation of thin magnetic films creates intense and ultrafast spin currents. Here we utilize this method to change the orientation of the magnetization in a magnetic bilayer by spin-transfer torque on sub-picosecond timescales. By analysing the dynamics of the magnetic bilayer after laser excitation, the rich physics governing ultrafast spin-transfer torque are elucidated opening up new pathways to ultrafast magnetization reversal, but also providing a new method to quantify optically induced spin currents generated on femtosecond timescales.

Switchable spin-current source controlled by magnetic domain walls

Using nonlocal spin injection, spin-orbit coupling, or spincaloritronic effects, the manipulation of pure spin currents in nanostructures underlies the development of new spintronic devices. Here, we demonstrate the possibility to create switchable pure spin current sources, controlled by magnetic domain walls. When the domain wall is located at a given point of the magnetic circuit, a pure spin current is injected into a nonmagnetic wire. Using the reciprocal measurement configuration, we demonstrate that the proposed device can also be used as a pure spin current detector. Thanks to its simple geometry, this device can be easily implemented in spintronics applications; in particular, a single current source can be used both to induce the domain wall motion and to generate the spin signal.

Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields

Magnetization switching by current-induced spin-orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the presence of an in-plane external magnetic field is typically required to assist spin-orbit torque-driven switching and this is an obstacle for practical applications. Here, we report the switching of out-of-plane magnetized Ta/Co(20)Fe(60)B(20)/TaO(x) structures by spin-orbit torques driven by in-plane currents, without the need for any external magnetic fields. This is achieved by introducing a lateral structural asymmetry into our devices, which gives rise to a new field-like spin-orbit torque when in-plane current flows in these structures. The direction of the current-induced effective field corresponding to this field-like spin-orbit torque is out-of-plane, facilitating the switching of perpendicular magnets.

Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure

Recent demonstrations of magnetization switching induced by in-plane current in heavy metal/ferromagnetic heterostructures (HMFHs) have drawn great attention to spin torques arising from large spin-orbit coupling (SOC). Given the intrinsic strong SOC, topological insulators (TIs) are expected to be promising candidates for exploring spin-orbit torque (SOT)-related physics. Here we demonstrate experimentally the magnetization switching through giant SOT induced by an in-plane current in a chromium-doped TI bilayer heterostructure. The critical current density required for switching is below 8.9 × 10(4) A cm(-2) at 1.9 K. Moreover, the SOT is calibrated by measuring the effective spin-orbit field using second-harmonic methods. The effective field to current ratio and the spin-Hall angle tangent are almost three orders of magnitude larger than those reported for HMFHs. The giant SOT and efficient current-induced magnetization switching exhibited by the bilayer heterostructure may lead to innovative spintronics applications such as ultralow power dissipation memory and logic devices.

Tunable chiral spin texture in magnetic domain-walls

Magnetic domain-walls (DWs) with a preferred chirality exhibit very efficient current-driven motion. Since structural inversion asymmetry (SIA) is required for their stability, the observation of chiral domain walls in highly symmetric Pt/Co/Pt is intriguing. Here, we tune the layer asymmetry in this system and observe, by current-assisted DW depinning experiments, a small chiral field which sensitively changes. Moreover, we convincingly link the observed efficiency of DW motion to the DW texture, using DW resistance as a direct probe for the internal orientation of the DW under the influence of in-plane fields. The very delicate effect of capping layer thickness on the chiral field allows for its accurate control, which is important in designing novel materials for optimal spin-orbit-torque-driven DW motion.

Scaling of spin Hall angle in 3d, 4d, and 5d metals from Y3Fe5O12/metal spin pumping

We have investigated spin pumping from Y3Fe5O12 thin films into Cu, Ag, Ta, W, Pt, and Au with varying spin-orbit coupling strengths. From measurements of Gilbert damping enhancement and inverse spin Hall signals spanning 3 orders of magnitude, we determine the spin Hall angles and interfacial spin mixing conductances for the six metals. The spin Hall angles largely vary as Z(4) (Z: atomic number), corroborating the role of spin-orbit coupling. Amongst the four 5d metals, the variation of the spin Hall angle is dominated by the sensitivity of the d-orbital moment to the d-electron count, confirming theoretical predictions.

Spin Hall voltages from a.c. and d.c. spin currents

In spin electronics, the spin degree of freedom is used to transmit and store information. To this end the ability to create pure spin currents--that is, without net charge transfer--is essential. When the magnetization vector in a ferromagnet-normal metal junction is excited, the spin pumping effect leads to the injection of pure spin currents into the normal metal. The polarization of this spin current is time-dependent and contains a very small d.c. component. Here we show that the large a.c. component of the spin currents can be detected efficiently using the inverse spin Hall effect. The observed a.c.-inverse spin Hall voltages are one order of magnitude larger than the conventional d.c.-inverse spin Hall voltages measured on the same device. Our results demonstrate that ferromagnet-normal metal junctions are efficient sources of pure spin currents in the gigahertz frequency range.

Current-induced spin polarization on metal surfaces probed by spin-polarized positron beam

Current-induced spin polarization (CISP) on the outermost surfaces of Au, Cu, Pt, Pd, Ta, and W nanoscaled films were studied using a spin-polarized positron beam. The Au and Cu surfaces showed no significant CISP. In contrast, the Pt, Pd, Ta, and W films exhibited large CISP (3~15% per input charge current of 10⁵ A/cm²) and the CISP of Ta and W were opposite to those of Pt and Pd. The sign of the CISP obeys the same rule in spin Hall effect suggesting that the spin-orbit coupling is mainly responsible for the CISP. The magnitude of the CISP is explained by the Rashba-Edelstein mechanism rather than the diffusive spin Hall effect. This settles a controversy, that which of these two mechanisms dominates the large CISP on metal surfaces.

Room-temperature antiferromagnetic memory resistor

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

Angular and temperature dependence of current induced spin-orbit effective fields in Ta/CoFeB/MgO nanowires

Current induced spin-orbit effective magnetic fields in metal/ferromagnet/oxide trilayers provide a new way to manipulate the magnetization, which is an alternative to the conventional current induced spin transfer torque arising from noncollinear magnetization. Ta/CoFeB/MgO structures are expected to be useful for non-volatile memories and logic devices due to its perpendicular anisotropy and large current induced spin-orbit effective fields. However many aspects such as the angular and temperature dependent phenomena of the effective fields are little understood. Here, we evaluate the angular and temperature dependence of the current-induced spin-orbit effective fields considering contributions from both the anomalous and planar Hall effects. The longitudinal and transverse components of effective fields are found to have strong angular dependence on the magnetization direction at 300 K. The transverse field decreases significantly with decreasing temperature, whereas the longitudinal field shows weaker temperature dependence. Our results reveal important features and provide an opportunity for a more comprehensive understanding of current induced spin-orbit effective fields.

Synchronous precessional motion of multiple domain walls in a ferromagnetic nanowire by perpendicular field pulses

Magnetic storage and logic devices based on magnetic domain wall motion rely on the precise and synchronous displacement of multiple domain walls. The conventional approach using magnetic fields does not allow for the synchronous motion of multiple domains. As an alternative method, synchronous current-induced domain wall motion was studied, but the required high-current densities prevent widespread use in devices. Here we demonstrate a radically different approach: we use out-of-plane magnetic field pulses to move in-plane domains, thus combining field-induced magnetization dynamics with the ability to move neighbouring domain walls in the same direction. Micromagnetic simulations suggest that synchronous permanent displacement of multiple magnetic walls can be achieved by using transverse domain walls with identical chirality combined with regular pinning sites and an asymmetric pulse. By performing scanning transmission X-ray microscopy, we are able to experimentally demonstrate in-plane magnetized domain wall motion due to out-of-plane magnetic field pulses.

Magnetic domain walls could form the basis for information technology with high storage density, but require comparatively high current densities to be moved by spin torque. Here, the authors demonstrate a radically different approach with perpendicular magnetic field pulses moving domain walls synchronously.

Spin pumping and inverse spin Hall effect in platinum: the essential role of spin-memory loss at metallic interfaces

Through combined ferromagnetic resonance, spin pumping, and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of ℓsfPt=3.4±0.4  nm and θSHEPt=0.056±0.010 for the respective spin diffusion length and spin Hall angle for Pt. Our data and model emphasize the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic damping and the spin Hall effect induced voltage.

Multi-bit operations in vertical spintronic shift registers

Spintronic devices have in general demonstrated the feasibility of non-volatile memory storage and simple Boolean logic operations. Modern microprocessors have one further frequently used digital operation: bit-wise operations on multiple bits simultaneously. Such operations are important for binary multiplication and division and in efficient microprocessor architectures such as reduced instruction set computing (RISC). In this paper we show a four-stage vertical serial shift register made from RKKY coupled ultrathin (0.9 nm) perpendicularly magnetised layers into which a 3-bit data word is injected. The entire four stage shift register occupies a total length (thickness) of only 16 nm. We show how under the action of an externally applied magnetic field bits can be shifted together as a word and then manipulated individually, including being brought together to perform logic operations. This is one of the highest level demonstrations of logic operation ever performed on data in the magnetic state and brings closer the possibility of ultrahigh density all-magnetic microprocessors.

Microscopic theory of the inverse Edelstein effect

We provide a precise microscopic definition of the recently observed inverse Edelstein effect in which a nonequilibrium spin accumulation in the plane of a two-dimensional (interfacial) electron gas drives an electric current perpendicular to its own direction. The drift-diffusion equations that govern the effect are presented and applied to the interpretation of the experiments.

An antidamping spin-orbit torque originating from the Berry curvature

Magnetization switching at the interface between ferromagnetic and paramagnetic metals, controlled by current-induced torques, could be exploited in magnetic memory technologies. Compelling questions arise regarding the role played in the switching by the spin Hall effect in the paramagnet and by the spin-orbit torque originating from the broken inversion symmetry at the interface. Of particular importance are the antidamping components of these current-induced torques acting against the equilibrium-restoring Gilbert damping of the magnetization dynamics. Here, we report the observation of an antidamping spin-orbit torque that stems from the Berry curvature, in analogy to the origin of the intrinsic spin Hall effect. We chose the ferromagnetic semiconductor (Ga,Mn)As as a material system because its crystal inversion asymmetry allows us to measure bare ferromagnetic films, rather than ferromagnetic-paramagnetic heterostructures, eliminating by design any spin Hall effect contribution. We provide an intuitive picture of the Berry curvature origin of this antidamping spin-orbit torque as well as its microscopic modelling. We expect the Berry curvature spin-orbit torque to be of comparable strength to the spin-Hall-effect-driven antidamping torque in ferromagnets interfaced with paramagnets with strong intrinsic spin Hall effect.