Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect Monolayers

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

2D materials exhibit intriguing electrical and optical properties, making them promising candidates for next-generation nanoelectronic devices. However, the high contact resistance of 2D materials to electrode material often limits the ultimate performance and potential of 2D materials and devices. In this work, we demonstrate a localized femtosecond (fs) laser irradiation process to substantially minimize the resistance of MoS₂-metal contacts. A reduction of the contact resistance exceeding three orders of magnitude is achieved for mechanically exfoliated MoS₂, which remarkably improves the overall FET performance. The underlying mechanisms of resistance reduction are the removal of organic contamination induced by the transfer process, as well as the lowering of Schottky barrier resistance (R_SB) attributed to interface Fermi level pinning (FLP) by Au diffusion, and the lowering of interlayer resistance (R_int) due to interlayer coupling enhancement by Au intercalation under fs laser irradiation. By taking advantage of the improved MoS₂-metal contact behavior, a high-performance MoS₂ photodetector was developed with a photoresponsivity of 68.8 A W^-1 at quite a low V_ds of 0.5 V, which is ∼80 times higher than the pristine multilayer photodetector. This contamination-free, site-specific, and universal photonic fabrication technique provides an effective tool for the integration of complex 2D devices, and the mechanism of MoS₂-metal interface modification reveals a new pathway to engineer the 2D material-metal interface.

Mechanistic insight into the chemical treatments of monolayer transition metal disulfides for photoluminescence enhancement

There is a growing interest in obtaining high quality monolayer transition metal disulfides for optoelectronic applications. Surface treatments using a range of chemicals have proven effective to improve the photoluminescence yield of these materials. However, the underlying mechanism for the photoluminescence enhancement is not clear, which prevents a rational design of passivation strategies. Here, a simple and effective approach to significantly enhance the photoluminescence is demonstrated by using a family of cation donors, which we show to be much more effective than commonly used p-dopants. We develop a detailed mechanistic picture for the action of these cation donors and demonstrate that one of them, bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI), enhances the photoluminescence of both MoS2 and WS2 to a level double that of the currently best performing super-acid trifluoromethanesulfonimide (H-TFSI) treatment. In addition, the ionic salts used in our treatments are compatible with greener solvents and are easier to handle than super-acids, providing the possibility of performing treatments during device fabrication. This work sets up rational selection rules for ionic chemicals to passivate transition metal disulfides and increases their potential in practical optoelectronic applications.

Growth of High-Quality Monolayer Transition Metal Dichalcogenide Nanocrystals by Chemical Vapor Deposition and Their Photoluminescence and Electrocatalytic Properties

Two-dimensional transition metal dichalcogenide (TMDC) nanocrystals (NCs) exhibit unique optical and electrocatalytic properties. However, the growth of uniform and high-quality NCs of monolayer TMDC remains a challenge. Until now, most of them are synthesized via a solution-based hydrothermal process or ultrasonic exfoliation method, in which the capping ligands introduced from organic solution often quench the optical and electrocatalytic properties of TMDC NCs. Moreover, it is difficult to homogeneously disperse the solution-based TMDC NCs on a substrate for device fabrication, since the dispersed NCs can easily aggregate. Here, we put forward a novel CVD method to grow closely spaced MoS₂ NCs around 5 nm in lateral size. TEM and AFM characterizations demonstrate the monolayer and high-crystalline nature of MoS₂ NCs. An obvious blue-shift with 130 meV in photoluminescence signals can be observed. The MoS₂ NCs also show an outstanding surface-enhanced Raman scattering for organic molecules due to their localized surface plasmon and abundant edge sites and exhibit excellent electrocatalytic properties for the hydrogen-evolution reaction with a very low onset potential of ∼50 mV and Tafel slope of ∼57 mV/decade. Finally, we further demonstrate this kind of CVD method as a versatile platform for the growth of other TMDC NCs, such as WSe₂ and MoSe₂ NCs.

Ultrafast evolution of the complex dielectric function of monolayer WS2 after photoexcitation

Transition metal dichalcogenides emerged as ideal materials for the investigation of exciton physics. Retrieving the excitonic signature in optical spectra, and tracking their time evolution upon photoexcitation requires appropriate analysis procedures, particularly when comparing different measurements, experimental techniques, samples, and substrates. In this work, we investigate the ultrafast time evolution of the exciton resonance of a monolayer of WS₂ deposited on fused silica and Si/SiO₂, and using two different measurement techniques: time-resolved reflectance and transmittance contrast. By modelling the dielectric function of the exciton with a Lorentz oscillator, using a Fresnell equations formalism, we derive analytical expressions of the exciton lineshape in both cases. The 2D linearized model introduced by Li et al. [Y. Li and T. F. Heinz, 2D Mater., 2018, 5, 025021] is used for the transmittance of the transparent substrate and a Fresnel transfer matrix method [O. Stenzel, The Physics of Thin Film Optical Spectra, Springer Series in Surface Science, 2016] is used to derive the reflectance in the case of the layered Si/SiO₂ substrate. By fitting two models to the time-dependent optical spectra, we extract and quantify the time evolution of the parameter describing the excitonic resonance. We find a remarkable agreement between the extracted dynamics from both experiments despite the different side conditions, showing the equivalence and reliability of the two analysis methods in use. With this work, we pave the way to the resilient comparison of the exciton dynamics from different samples, measurements technique and substrates.

Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS2-FETs under Light-Assisted and Gate-Bias Tunable Operation

Using a single-device two-dimensional (2D) rhenium disulfide (ReS₂) field-effect transistor (FET) with enhanced gas species selectivity by light illumination, we reported a selective and sensitive detection of volatile organic compound (VOC) gases. 2D materials have the advantage of a high surface-area-to-volume ratio for high sensitivity to molecules attached to the surface and tunable carrier concentration through field-effect control from the back-gate of the channel, while keeping the top surface open to the air for chemical sensing. In addition to these advantages, ReS₂ has a direct band gap also in multilayer cases, which sets it apart from other transition-metal dichalcogenides (TMDCs). We take advantage of the effective response of ReS₂ to light illumination to improve the selectivity and gas-sensing efficiency of a ReS₂-FET device. We found that light illumination modulates the drain current response in a ReS₂-FET to adsorbed molecules, and the sensing activity differs depending on the gas species used, such as acetone, ethanol, and methanol. Furthermore, wavelength and carrier density rely on certain variations in light-modulated sensing behaviors for each chemical. The device will distinguish the gas concentration in a mixture of VOCs using the differences induced by light illumination, enhancing the selectivity of the sensor device. Our results shed new light on the sensing technologies for realizing a large-scale sensor network in the Internet-of-Things era.

Recent progress in the synthesis of novel two-dimensional van der Waals materials

The last decade has witnessed the significant progress of physical fundamental research and great success of practical application in two-dimensional (2D) van der Waals (vdW) materials since the discovery of graphene in 2004. To date, vdW materials is still a vibrant and fast-expanding field, where tremendous reports have been published covering topics from cutting-edge quantum technology to urgent green energy, and so on. Here, we briefly review the emerging hot physical topics and intriguing materials, such as 2D topological materials, piezoelectric materials, ferroelectric materials, magnetic materials and twistronic heterostructures. Then, various vdW material synthetic strategies are discussed in detail, concerning the growth mechanisms, preparation conditions and typical examples. Finally, prospects and further opportunities in the booming field of 2D materials are addressed.

Recent progress on emergent two-dimensional magnets and heterostructures

Intrinsic two-dimensional (2D) magnetic materials own strong long-range magnetism while their characteristics of the ultrathin thickness and smooth surface provide an ideal platform for manipulating the magnetic properties at 2D limit. This makes them to be potential candidates in various spintronic applications compared to their corresponding bulk counterparts. The discovery of magnetic ordering in 2D CrI₃and Gr₂Ge₂Te₆nanostructures stimulated tremendous research interest in both experimental and theoretical studies on various intrinsic magnets at 2D limit. This review gives a comprehensive overview of the recent progress on the emergent 2D magnets and heterostructures. Firstly, several kinds of typical 2D magnetic materials discovered in the last few years and their fabrication methods are summarized in detail. Secondly, the current strategies for manipulating magnetic properties in 2D materials are further discussed. Then, the recent advances on the construction of representative van der Waals magnetic heterostructures and their respective performance are provided. With the hope of motivating the researchers in this area, we finally offered the challenges and outlook on 2D magnetism.

Two-Dimensional Van Der Waals Materials for Spin-Orbit Torque Applications

Spin-orbit torque (SOT) provides an efficient approach to control the magnetic state and dynamics in different classes of materials. Recent years, the crossover between two-dimensional van der Waals (2D vdW) materials and SOT opens a new prospect to push SOT devices to the 2D limit. In this mini-review, we summarize the latest progress in 2D vdW materials for SOT applications, highlighting the comparison of the performance between devices with various structures. It is prospected that the large family of 2D vdW materials and numerous combinations of heterostructures will widely extend the material choices and bring new opportunities to SOT devices in the future.

Dry Exfoliation of Large-Area 2D Monolayer and Heterostructure Arrays

Two-dimensional (2D) semiconductors have attracted considerable attention in recent years. However, to date, there is still no effective approach to produce large-scale monolayers while retaining their intrinsic properties. Here, we report a simple mechanical exfoliation method to produce large-scale and high-quality 2D semiconductors, by designing an atomically flat Au-mesh film as the peeling tape. Using our prefabricated mesh tape, the limited contact region (between the 2D crystal and Au) could provide enough adhesion to mechanically exfoliate uniform 2D monolayers, and the noncontact region (between the mesh holes and monolayers) ensures weak interaction to mechanically release the 2D monolayers on desired substrates. Together, we demonstrate a scalable method to dry exfoliate various 2D monolayer arrays onto different substrates without involving any solutions or contaminations, representing the optimization between material yield, scalability, and quality. Furthermore, detailed optical and electrical characterizations are conducted to confirm their intrinsic quality. With the ability to mechanically exfoliate various 2D arrays and further restacking them, we have demonstrated large-scale van der Waals heterostructure arrays through layer-to-layer assembling. Our study offers a simple and scalable method for dry exfoliating 2D monolayer and heterostructure arrays with intrinsic material quality, which could be crucial to accelerate fundamental investigations as well as practical applications of proof-of-concepts devices.

Recent developments in 2D transition metal dichalcogenides: phase transition and applications of the (quasi-)metallic phases

The advent of two-dimensional transition metal dichalcogenides (2D-TMDs) has led to an extensive amount of interest amongst scientists and engineers alike and an intensive amount of research has brought about major breakthroughs in the electronic and optical properties of 2D materials. This in turn has generated considerable interest in novel device applications. With the polymorphic structural features of 2D-TMDs, this class of materials can exhibit both semiconducting and metallic (quasi-metallic) properties in their respective phases. This polymorphic property further increases the interest in 2D-TMDs both in fundamental research and for their potential utilization in novel high-performance device applications. In this review, we highlight the unique structural properties of few-layer and monolayer TMDs in the metallic 1T- and quasi-metallic 1T'-phases, and how these phases dictate their electronic and optical properties. An overview of the semiconducting-to-(quasi)-metallic phase transition of 2D-TMD systems will be covered along with a discussion on the phase transition mechanisms. The current development in the applications of (quasi)-metallic 2D-TMDs will be presented ranging from high-performance electronic and optoelectronic devices to energy storage, catalysis, piezoelectric and thermoelectric devices, and topological insulator and neuromorphic computing applications. We conclude our review by highlighting the challenges confronting the utilization of TMD-based systems and projecting the future developmental trends with an outlook of the progress needed to propel this exciting field forward.

Review and comparison of layer transfer methods for two-dimensional materials for emerging applications

Two-dimensional (2D) materials offer immense potential for scientific breakthroughs and technological innovations. While early demonstrations of 2D material-based electronics, optoelectronics, flextronics, straintronics, twistronics, and biomimetic devices exploited micromechanically-exfoliated single crystal flakes, recent years have witnessed steady progress in large-area growth techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and metal-organic CVD (MOCVD). However, use of high growth temperatures, chemically-active growth precursors and promoters, and the need for epitaxy often limit direct growth of 2D materials on the substrates of interest for commercial applications. This has led to the development of a large number of methods for the layer transfer of 2D materials from the growth substrate to the target application substrate with varying degrees of cleanliness, uniformity, and transfer-related damage. This review aims to catalog and discuss these layer transfer methods. In particular, the processes, advantages, and drawbacks of various transfer methods are discussed, as is their applicability to different technological platforms of interest for 2D material implementation.

Spatiotemporal Imaging of Thickness-Induced Band-Bending Junctions

van der Waals materials exhibit naturally passivated surfaces and an ability to form versatile heterostructures to enable an examination of carrier transport mechanisms not seen in traditional materials. Here, we report a new type of homojunction termed a "band-bending junction" whose potential landscape depends solely on the difference in thickness between the two sides of the junction. Using MoS₂ on Au as a prototypical example, we find that surface potential differences can arise from the degree of vertical band bending in thin and thick regions. Furthermore, by using scanning ultrafast electron microscopy, we examine the spatiotemporal dynamics of charge carriers generated at this junction and find that lateral carrier separation is enabled by differences in the band bending in the vertical direction, which we verify with simulations. Band-bending junctions may therefore enable new optoelectronic devices that rely solely on band bending arising from thickness variations to separate charge carriers.

Giant photoluminescence enhancement in MoSe2 monolayers treated with oleic acid ligands

The inherently low photoluminescence (PL) yields in the as prepared transition metal dichalcogenide (TMD) monolayers are broadly accepted to be the result of atomic vacancies (i.e., defects) and uncontrolled doping, which give rise to non-radiative exciton decay pathways. To date, a number of chemical passivation schemes have been successfully developed to improve PL in sulphur based TMDs i.e., molybdenum disulphide (MoS₂) and tungsten disulphide (WS₂) monolayers. Studies on solution based chemical passivation schemes for improving PL yields in selenium (Se) based TMDs are however lacking in comparison. Here, we demonstrate that treatment with oleic acid (OA) provides a simple wet chemical passivation method for monolayer MoSe₂, enhancing PL yields by an average of 58-fold, while also improving spectral uniformity across the material and reducing the emission linewidth. Excitation intensity dependent PL reveals trap-free PL dynamics dominated by neutral exciton recombination. Time-resolved PL (TRPL) studies reveal significantly increased PL lifetimes, with pump intensity dependent TRPL measurements also confirming trap free PL dynamics in OA treated MoSe₂. Field effect transistors show reduced charge trap density and improved on-off ratios after treatment with OA. These results indicate defect passivation by OA, which we hypothesise as ligands passivating chalcogen defects through oleate coordination to Mo dangling bonds. Importantly, this work combined with our previous study on OA treated WS₂, verifies OA treatment as a simple solution-based chemical passivation protocol for improving PL yields and electronic characteristics in both selenide and sulphide TMDs - a property that has not been reported previously for other solution-based passivation schemes.

Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate

Gold-assisted mechanical exfoliation currently represents a promising method to separate ultralarge (centimeter scale) transition metal dichalcogenide (TMD) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vdW) crystals. The strong interaction between Au and chalcogen atoms is key to achieving this nearly perfect 1L exfoliation yield. On the other hand, it may significantly affect the doping and strain of 1L TMDs in contact with Au. In this paper, we systematically investigated the morphology, strain, doping, and electrical properties of large area 1L MoS₂ exfoliated on ultraflat Au films (0.16-0.21 nm roughness) and finally transferred to an insulating Al₂O₃ substrate. Raman mapping and correlative analysis of the E' and A₁' peak positions revealed a moderate tensile strain (ε ≈ 0.2%) and p-type doping (n ≈ -0.25 × 10¹³ cm^-2) of 1L MoS₂ in contact with Au. Nanoscale resolution current mapping and current-voltage (I-V) measurements by conductive atomic force microscopy (C-AFM) showed direct tunneling across the 1L MoS₂ on Au, with a broad distribution of tunneling barrier values (Φ_B from 0.7 to 1.7 eV) consistent with p-type doping of MoS₂. After the final transfer of 1L MoS₂ on Al₂O₃/Si, the strain was converted to compressive strain (ε ≈ -0.25%). Furthermore, an n-type doping (n ≈ 0.5 × 10¹³ cm^-2) was deduced by Raman mapping and confirmed by electrical measurements of an Al₂O₃/Si back-gated 1L MoS₂ transistor. These results provide a deeper understanding of the Au-assisted exfoliation mechanism and can contribute to its widespread application for the realization of novel devices and artificial vdW heterostructures.

Mobility Extraction in 2D Transition Metal Dichalcogenide Devices-Avoiding Contact Resistance Implicated Overestimation

Schottky barrier (SB) transistors operate distinctly different from conventional metal-oxide semiconductor field-effect transistors, in a unique way that the gate impacts the carrier injection from the metal source/drain contacts into the channel region. While it has been long recognized that this can have severe implications for device characteristics in the subthreshold region, impacts of contact gating of SB in the on-state of the devices, which affects evaluation of intrinsic channel properties, have been yet comprehensively studied. Due to the fact that contact resistance (R_C ) is always gate-dependent in a typical back-gated device structure, the traditional approach of deriving field-effect mobility from the maximum transconductance (g_m ) is in principle not correct and can even overestimate the mobility. In addition, an exhibition of two different threshold voltages for the channel and the contact region leads to another layer of complexity in determining the true carrier concentration calculated from Q = C_OX * (V_G -V_TH ). Through a detailed experimental analysis, the effect of different effective oxide thicknesses, distinct SB heights, and doping-induced reductions in the SB width are carefully evaluated to gain a better understanding of their impact on important device metrics.

Imaging the coherent propagation of collective modes in the excitonic insulator Ta2NiSe5 at room temperature

Excitonic insulators host a condensate of electron-hole pairs at equilibrium, giving rise to collective many-body effects. Although several materials have emerged as excitonic insulator candidates, evidence of long-range coherence is lacking and the origin of the ordered phase in these systems remains controversial. Here, using ultrafast pump-probe microscopy, we investigate the possible excitonic insulator Ta2NiSe5 Below 328 K, we observe the anomalous micrometer-scale propagation of coherent modes at velocities of ~105 m/s, which we attribute to the hybridization between phonon modes and the phase mode of the condensate. We develop a theoretical framework to support this explanation and propose that electronic interactions provide a substantial contribution to the ordered phase in Ta2NiSe5 These results allow us to understand how the condensate's collective modes transport energy and interact with other degrees of freedom. Our study provides a unique paradigm for the investigation and manipulation of these properties in strongly correlated materials.

Application of advanced materials in sonophotocatalytic processes for the remediation of environmental pollutants

Significant advances in various industrial processes have resulted in the discharge of toxic pollutants into the environment. Consequently, it is essential to develop efficient wastewater treatment processes to reduce water contamination and increase recycling/reuse. Photocatalytic degradation is considered as an efficient method for the degradation of toxic pollutants in industrial wastewater. However, the use of photocatalytic approaches is associated with numerous limitations, such as lengthy procedures and the necessity for large amounts of catalysts. Hence, it has been proposed that photocatalysis could be combined with other techniques, including sonolysis, electrochemical, photothermal, microwave, ultrafiltration, and biological reactor. The integration of photocatalysis with sonolysis could be remarkably beneficial for environmental remediation. The combination of these processes has the advantages of using uniformly dispersed catalysts, regeneration of the catalyst surface, improved mass transfer, enhanced surface area due to smaller catalyst particles, and production of more active radicals for the degradation of organic pollutants. In this review, an overview on employing sonophotocatalysis for the removal of toxic organic contaminants from aqueous environments is provided. Additionally, the limitations of photocatalysis alone and the fundamental sonophotocatalytic mechanistic pathways are discussed. The importance of utilizing advanced two-dimensional (2D) semiconductor materials in sonophotocatalysis and the common synthetic approaches for the preparation of 2D materials are also highlighted. Lastly, the review provides comprehensive insights into different materials based on metal oxides, chalcogenides, graphene, and metal organic frameworks (MOFs), which are involved in sonophotocatalytic processes employed for the remediation of environmental pollutants.

Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics

The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe₂) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe₂. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe₂, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe₂ nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe₂ and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe₂ van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.

Thickness-Dependent Elastic Softening of Few-Layer Free-Standing MoSe2

Few-layer van der Waals (vdW) materials have been extensively investigated in terms of their exceptional electronic, optoelectronic, optical, and thermal properties. Simultaneously, a complete evaluation of their mechanical properties remains an undeniable challenge due to the small lateral sizes of samples and the limitations of experimental tools. In particular, there is no systematic experimental study providing unambiguous evidence on whether the reduction of vdW thickness down to few layers results in elastic softening or stiffening with respect to the bulk. In this work, micro-Brillouin light scattering is employed to investigate the anisotropic elastic properties of single-crystal free-standing 2H-MoSe₂ as a function of thickness, down to three molecular layers. The so-called elastic size effect, that is, significant and systematic elastic softening of the material with decreasing numbers of layers is reported. In addition, this approach allows for a complete mechanical examination of few-layer membranes, that is, their elasticity, residual stress, and thickness, which can be easily extended to other vdW materials. The presented results shed new light on the ongoing debate on the elastic size-effect and are relevant for performance and durability of implementation of vdW materials as resonators, optoelectronic, and thermoelectric devices.

Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides

Structural defects vary the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to control defect type and density via materials growth or postgrowth passivation. Here, we explore a simple chemical treatment that allows on-off switching of low-lying, defect-localized exciton states, leading to tunable emission properties. Using steady-state and ultrafast optical spectroscopy, supported by ab initio calculations, we show that passivation of sulfur vacancy defects, which act as exciton traps in monolayer MoS₂ and WS₂, allows for controllable and improved mobilities and an increase in photoluminescence up to 275-fold, more than twice the value achieved by other chemical treatments. Our findings suggest a route for simple and rational defect engineering strategies for tunable and switchable electronic and excitonic properties through passivation.

Facile Exfoliation for High-Quality Molybdenum Disulfide Nanoflakes and Relevant Field-Effect Transistors Developed With Thermal Treatment

Molybdenum disulfide (MoS₂), a typical member of the transition metal dichalcogenides (TMDs) group, is known for its excellent electronic performance and is considered a candidate next-generation semiconductor. The preparation of MoS₂ nanoflakes for use as the core of semiconducting devices depends on mechanical exfoliation, but its quality has not yet been optimized. In this paper, a novel exfoliation method of achieving MoS₂ nanoflakes is proposed. We find that the size and yield of the exfoliated flakes are improved after thermal treatment for 2 h at a temperature of 110°C followed by precooling for 10 min in ambient air. The new method has the advantage of a 152-fold larger size of obtained MoS₂ flakes than traditional mechanical exfoliation. This phenomenon may be attributable to the differences in van Der Waals force and the increase in surface free energy at the interface induced by thermal treatment. In addition, a field-effect transistor (FET) was fabricated on the basis of multilayer MoS₂ prepared according to a new process, and the device exhibited a typical depleted-FET performance, with an on/off ratio of ~10⁵ and a field-effect mobility of 24.26 cm²/Vs in the saturated region when V_G is 10 V, which is generally consistent with the values for devices reported previously. This implies that the new process may have potential for the standard preparation of MoS₂ and even other 2D materials as well.

A wafer-scale synthesis of monolayer MoS2 and their field-effect transistors toward practical applications

Molybdenum disulfide (MoS2) has attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physicochemical properties. However, it is still challenging to achieve large-area MoS2 monolayers with desired material quality and electrical properties to fulfill the requirement for practical applications. Recently, a variety of investigations have focused on wafer-scale monolayer MoS2 synthesis with high-quality. The 2D MoS2 field-effect transistor (MoS2-FET) array with different configurations utilizes the high-quality MoS2 film as channels and exhibits favorable performance. In this review, we illustrated the latest research advances in wafer-scale monolayer MoS2 synthesis by different methods, including Au-assisted exfoliation, CVD, thin film sulfurization, MOCVD, ALD, VLS method, and the thermolysis of thiosalts. Then, an overview of MoS2-FET developments was provided based on large-area MoS2 film with different device configurations and performances. The different applications of MoS2-FET in logic circuits, basic memory devices, and integrated photodetectors were also summarized. Lastly, we considered the perspective and challenges based on wafer-scale monolayer MoS2 synthesis and MoS2-FET for developing practical applications in next-generation integrated electronics and flexible optoelectronics.

Gate-Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS2 Phototransistor with Ultrahigh Photoresponsivity

Monolayer transition metal dichalcogenides (TMDs), direct bandgap materials with an atomically thin nature, are promising materials for electronics and photonics, especially at highly scaled lateral dimensions. However, the characteristically low total absorption of photons in the monolayer TMD has become a challenge in the access to and realization of monolayer TMD-based high-performance optoelectronic functionalities and devices. Here, we demonstrate gate-tunable plasmonic phototransistors (photoFETs) that consist of monolayer molybdenum disulfide (MoS₂) photoFETs integrated with the two-dimensional plasmonic crystals. The plasmonic photoFET has an ultrahigh photoresponsivity of 2.7 × 10⁴ AW^-1, achieving a 7.2-fold enhancement in the photocurrent compared to pristine photoFETs. This benefits predominately from the combination of the enhancement of the photon-absorption-rate via the strongly localized-electromagnetic-field and the gate-tunable plasmon-induced photocarrier-generation-rate in the monolayer MoS₂. These results demonstrate a systematic methodology for designing ultrathin plasmon-enhanced photodetectors based on monolayer TMDs for next-generation ultracompact optoelectronic devices in the trans-Moore era.

Recent Advances in 2D Group VB Transition Metal Chalcogenides

2D materials have received considerable research interest owing to their abundant material systems and remarkable properties. Among them, 2D group VB transition metal chalcogenides (GVTMCs) stand out as emerging 2D metallic materials and significantly broaden the research scope of 2D materials. 2D GVTMCs have great advantages in electrical transport, 2D magnetism, charge density wave, sensing, catalysis, and charge storage, making them attractive in the fields of functional devices and energy chemistry. In this review, the recent progress of 2D GVTMCs is summarized systematically from fundamental properties, growth methodologies to potential applications. The challenges and prospects are also discussed for future research in this field.

Two-dimensional WS2/MoS2 heterostructures: properties and applications

The successful fabrication of WS₂/MoS₂ heterostructures provides more possibilities for optoelectronic and thermoelectric applications than graphene because of their direct bandgap characteristics; therefore, scientific investigations on WS₂/MoS₂ heterostructures are more significant and thriving. In this paper, we review the latest research progress in WS₂/MoS₂ heterostructures, and look forward to their properties and applications. Firstly, we analyze the crystal structure and electronic structure of WS₂, MoS₂, and their heterostructures. Secondly, we comprehensively present the widely used methods for preparing heterostructures. Finally, based on the unique physical characteristics of WS₂/MoS₂ heterostructures, we focus on their properties and applications in mechanics, electronics, optoelectronics, and thermoelectronics.

Integrated contact lens sensor system based on multifunctional ultrathin MoS2 transistors

Smart contact lenses attract extensive interests due to their capability of directly monitoring physiological and ambient information. However, previous demonstrations usually lacked efficient sensor modalities, facile fabrication process, mechanical stability, or biocompatibility. Here, we demonstrate a flexible approach for fabrication of multifunctional smart contact lenses with an ultrathin MoS₂ transistors-based serpentine mesh sensor system. The integrated sensor systems contain a photodetector for receiving optical information, a glucose sensor for monitoring glucose level directly from tear fluid, and a temperature sensor for diagnosing potential corneal disease. Unlike traditional sensors and circuit chips sandwiched in the lens substrate, this serpentine mesh sensor system can be directly mounted onto the lenses and maintain direct contact with tears, delivering high detection sensitivity, while being mechanically robust and not interfering with either blinking or vision. Furthermore, the in vitro cytotoxicity tests reveal good biocompatibility, thus holding promise as next-generation soft electronics for healthcare and medical applications.

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor-Structure Devices

Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which revolutionary innovations are needed to address fundamental limitations on material and working principle level. 2D semiconductors inherently holding novel properties at the atomic limit show great promise to tackle challenges imposed by traditional bulk semiconductor materials. Synergistic combination of 2D semiconductors with functional ferroelectrics further offers new working principles, and is expected to deliver massively enhanced device performance for existing complementary metal-oxide-semiconductor (CMOS) technologies and add unprecedented applications for next-generation electronics. Herein, recent demonstrations of novel device concepts based on 2D semiconductor/ferroelectric heterostructures are critically reviewed covering their working mechanisms, device construction, applications, and challenges. In particular, emerging opportunities of CMOS-process-compatible 2D semiconductor/ferroelectric transistor structure devices for the development of a rich variety of applications are discussed, including beyond-Boltzmann transistors, nonvolatile memories, neuromorphic devices, and reconfigurable nanodevices such as p-n homojunctions and self-powered photodetectors. It is concluded that 2D semiconductor/ferroelectric heterostructures, as an emergent heterogeneous platform, could drive many more exciting innovations for modern electronics, beyond the capability of ubiquitous silicon systems.

Effect of substrate symmetry on the orientations of MoS2 monolayers

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are promising platforms for developing next-generation electronic and optoelectronic devices due to their unique properties. To achieve this, the growth of large single-crystal TMDs is a critical issue. Unraveling the factors affecting the nucleation and domain orientation should hold fundamental significance. Herein, we design the chemical vapor deposition growth of monolayer MoS₂ triangles on Au(111) and Au(100) facets, for exploring the substrate facet effects on the domain orientations. According to multi-scale characterizations, we find that, the obtained triangular MoS₂ domains present two preferential orientations on the six-fold symmetric Au(111) facet, whereas four predominant orientations on the four-fold symmetric Au(100) facet. Using on-site scanning tunneling microscopy, we further reveal the preferred alignments of monolayer MoS₂ triangles along the close-packed directions of both Au(111) and Au(100) facets. Moreover, bunched substrate steps are also found to form along the close-packed directions of the crystal facets, which guides the preferential nucleation of monolayer MoS₂ along the step edges. This work should hereby deepen the understanding of the substrate facet/step effect on the nucleation and orientation of monolayer MoS₂ domains, thus providing fundamental insights into the controllable syntheses of large single-crystal TMD monolayers.

Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS2, WSe2, and WTe2

Two-dimensional (2D) tungsten disulfide (WS₂), tungsten diselenide (WSe₂), and tungsten ditelluride (WTe₂) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS₂, WSe₂, and WTe₂ using a complementary suite of experiments and theoretical calculations. High-quality 1L WS₂ has the highest Young's modulus (302.4 ± 24.1 GPa) and strength (47.0 ± 8.6 GPa) of the entire family, overpassing those of 1L WSe₂ (258.6 ± 38.3 and 38.0 ± 6.0 GPa, respectively) and WTe₂ (149.1 ± 9.4 and 6.4 ± 3.3 GPa, respectively). However, the elasticity and strength of WS₂ decrease most dramatically with increased thickness among the three materials. We interpret the phenomenon by the different tendencies for interlayer sliding in an equilibrium state and under in-plane strain and out-of-plane compression conditions in the indentation process, revealed by the finite element method and density functional theory calculations including van der Waals interactions. We also demonstrate that the mechanical properties of the high-quality 1-3L WS₂ and WSe₂ are largely stable in air for up to 20 weeks. Intriguingly, the 1-3L WSe₂ shows increased modulus and strength values with aging in the air. This is ascribed to oxygen doping, which reinforces the structure. The present study will facilitate the design and use of 2D tungsten dichalcogenides in applications such as strain engineering and flexible field-effect transistors.

Visible-Light-Activated Response Originating from Carrier-Mobility Modulation of NO2 Gas Sensors Based on MoS2 Monolayers

Some gas sensors exhibit significant increases in their sensitivity and response/recovery rates under light illumination. This photoactivation of the gas response is considered a promising alternative to conventional thermal activation, which requires high power consumption. Thin layers of molybdenum disulfide (MoS₂) are known to exhibit an effective photoactivated gas response under visible light. However, the mechanism of the photoactivated response has not yet been studied in detail. In this study, we fabricated field-effect-transistor (FET) gas sensors based on MoS₂ monolayers and investigated their photoactivated gas responses to NO₂ gas under illumination at various irradiances of visible light. A photocurrent was generated mainly due to the photovoltaic effect, which decreased upon exposure to NO₂. The conductance-based sensor response showed a dependence on NO₂ concentration according to the Langmuir adsorption isotherm, thereby suggesting that the response is proportional to the surface coverage of NO₂ molecules on the MoS₂ layer. The response and recovery rates showed a linear increase with increasing irradiance. Analysis based on the Langmuir adsorption model revealed that both photostimulated adsorption and desorption are involved in the photoactivated response. In contrast, despite the strong dependence of the photocurrent on the irradiance, the magnitude of the sensor response was independent of the irradiance. Based on this result and the change in transfer characteristics of the FET during NO₂ exposure, we concluded that the fast response/recovery of the photoactivated response is due to the carrier mobility modulation of MoS₂, which is caused by the dipole scattering of adsorbed NO₂ molecules.

Large few-layer hexagonal boron nitride flakes for nonlinear optics

Hexagonal boron nitride (hBN) is a layered dielectric material with a wide range of applications in optics and photonics. In this work, we demonstrate a fabrication method for few-layer hBN flakes with areas up to 5000µm². We show that hBN in this form can be integrated with photonic microstructures: as an example, we use a circular Bragg grating (CBG). The layer quality of the exfoliated hBN flake on and off a CBG is confirmed by Raman spectroscopy and second-harmonic generation (SHG) microscopy. We show that the SHG signal is uniform across the hBN sample outside the CBG and is amplified in the center of the CBG.

Layered PtSe2 for Sensing, Photonic, and (Opto-)Electronic Applications

Since the first experimental discovery of graphene 16 years ago, many other 2D layered nanomaterials have been reported. However, the majority of 2D nanostructures suffer from relatively complicated fabrication processes that have bottlenecked their development and their uptake by industry for practical applications. Here, the recent progress in sensing, photonic, and (opto-)electronic applications of PtSe₂ , a 2D layered material that is likely to be used in industries benefiting from its high air-stability and semiconductor-technology-compatible fabrication methods, is reviewed. The advantages and disadvantages of a range of synthesis methods for PtSe₂ are initially compared, followed by a discussion of its outstanding properties, and industrial and commercial advantages. Research focused on the broadband nonlinear photonic properties of PtSe₂ , as well as reports of its use as a saturable absorber in ultrafast lasers, are then reviewed. Additionally, the advances that have been achieved in a range of PtSe₂ -based field-effect transistors, photodetectors, and sensors are summarized. Finally, a conclusion on these results along with the outlook for the future is presented.

Strain Induced Phase Transition of WS2 by Local Dewetting of Au/Mica Film upon Annealing

Here, we present a proof-of-concept experiment where phase engineering at the nanoscale of 2D transition metal dichalcogenides (TMDC) flakes (from semiconducting 2H phase to metallic 1T phase) can be achieved by thermal annealing of a TMDC/Au/mica system. The local dewetting of Au particles and resulting tensile strain produced on the TMDC flakes, strongly bound to the Au surface through effective S-Au bonds, can induce a local structural phase transition. An important role is also played by the defects induced by the thermal annealing: when vacancies are present, the threshold strain needed to trigger the phase transition is significantly reduced. Scanning photoelectron microscopy (SPEM) was revealed to be the perfect tool to monitor the described phenomena.

Formation of Coherent 1H-1T Heterostructures in Single-Layer MoS2 on Au(111)

Heterojunctions of semiconductors and metals are the fundamental building blocks of modern electronics. Coherent heterostructures between dissimilar materials can be achieved by composition, doping, or heteroepitaxy of chemically different elements. Here, we report the formation of coherent single-layer 1H-1T MoS₂ heterostructures by mechanical exfoliation on Au(111), which are chemically homogeneous with matched lattices but show electronically distinct semiconducting (1H phase) and metallic (1T phase) character, with the formation of these heterojunctions attributed to a combination of lattice strain and charge transfer. The exfoliation approach employed is free of tape residues usually found in many exfoliation methods and yields single-layer MoS₂ with millimeter (mm) size on the Au surface. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS) have collectively been employed to elucidate the structural and electronic properties of MoS₂ monolayers on Au substrates. Bubbles in the MoS₂ formed by the trapping of ambient adsorbates beneath the single layer during deposition, have also been observed and characterized. Our work here provides a basis to produce two-dimensional heterostructures which represent potential candidates for future electronic devices.

Probing stacking configurations in a few layered MoS2 by low frequency Raman spectroscopy

Novel two-dimensional (2D) layered materials, such as MoS₂, have recently gained a significant traction, chiefly due to their tunable electronic and optical properties. A major attribute that affects the tunability is the number of layers in the system. Another important, but often overlooked aspect is the stacking configuration between the layers, which can modify their electro-optic properties through changes in internal symmetries and interlayer interactions. This demands a thorough understanding of interlayer stacking configurations of these materials before they can be used in devices. Here, we investigate the spatial distribution of various stacking configurations and variations in interlayer interactions in few-layered MoS₂ flakes probed through the low-frequency Raman spectroscopy, which we establish as a versatile imaging tool for this purpose. Some interesting anomalies in MoS₂ layer stacking, which we propose to be caused by defects, wrinkles or twist between the layers, are also reported here. These types of anomalies, which can severely affect the properties of these materials can be detected through low-frequency Raman imaging. Our findings provide useful insights for understanding various structure-dependent properties of 2D materials that could be of great importance for the development of future electro-optic devices, quantum devices and energy harvesting systems.

Emergent phenomena and proximity effects in two-dimensional magnets and heterostructures

Ultrathin van der Waals materials and their heterostructures offer a simple, yet powerful platform for discovering emergent phenomena and implementing device structures in the two-dimensional limit. The past few years has pushed this frontier to include magnetism. These advances have brought forth a new assortment of layered materials that intrinsically possess a wide variety of magnetic properties and are instrumental in integrating exchange and spin-orbit interactions into van der Waals heterostructures. This Review Article summarizes recent progress in exploring the intrinsic magnetism of atomically thin van der Waals materials, manipulation of their magnetism by tuning the interlayer coupling, and device structures for spin- and valleytronic applications.

Directed Energy Transfer from Monolayer WS2 to Near-Infrared Emitting PbS-CdS Quantum Dots

Heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDs) and inorganic semiconducting zero-dimensional (0D) quantum dots (QDs) offer useful charge and energy transfer pathways, which could form the basis of future optoelectronic devices. To date, most have focused on charge transfer and energy transfer from QDs to TMDs, that is, from 0D to 2D. Here, we present a study of the energy transfer process from a 2D to 0D material, specifically exploring energy transfer from monolayer tungsten disulfide (WS₂) to near-infrared emitting lead sulfide-cadmium sulfide (PbS-CdS) QDs. The high absorption cross section of WS₂ in the visible region combined with the potentially high photoluminescence (PL) efficiency of PbS QD systems makes this an interesting donor-acceptor system that can effectively use the WS₂ as an antenna and the QD as a tunable emitter, in this case, downshifting the emission energy over hundreds of millielectron volts. We study the energy transfer process using photoluminescence excitation and PL microscopy and show that 58% of the QD PL arises due to energy transfer from the WS₂. Time-resolved photoluminescence microscopy studies show that the energy transfer process is faster than the intrinsic PL quenching by trap states in the WS₂, thus allowing for efficient energy transfer. Our results establish that QDs could be used as tunable and high PL efficiency emitters to modify the emission properties of TMDs. Such TMD-QD heterostructures could have applications in light-emitting technologies or artificial light-harvesting systems or be used to read out the state of TMD devices optically in various logic and computing applications.

Machine Learning Analysis of Raman Spectra of MoS2

Defects introduced during the growth process greatly affect the device performance of two-dimensional (2D) materials. Here we demonstrate the applicability of employing machine-learning-based analysis to distinguish the monolayer continuous film and defect areas of molybdenum disulfide (MoS₂) using position-dependent information extracted from its Raman spectra. The random forest method can analyze multiple Raman features to identify samples, making up for the problem of not being able to effectively identify by using just one certain variable with high recognition accuracy. Even some dispersed nucleation site defects can be predicted, which would commonly be ignored under an optical microscope because of the lower optical contrast. The successful application for classification and analysis highlights the potential for implementing machine learning to tap the depth of classical methods in 2D materials research.

Air-Stable 2D Intrinsic Ferromagnetic Ta3FeS6 with Four Months Durability

2D ferromagnetic materials provide an important platform for the fundamental magnetic research at atomic-layer thickness which has great prospects for next-generation spintronic devices. However, the currently discovered 2D ferromagnetic materials (such as, CrI3, Cr2Ge2Te6, and Fe3GeTe2) suffer from poor air stability, which hinders their practical application. Herein, intrinsic long-range ferromagnetic order in 2D Ta3FeS6 is reported, which exhibits ultrahigh stability under the atmospheric environment. The intrinsic ferromagnetism of few-layer Ta3FeS6 is revealed by polar magneto-optical Kerr effect measurement, which exhibits giant MOKE response and has Curie temperature of ≈80 K. More importantly, few-layer Ta3FeS6 nanosheet exhibits excellent air stability and its ferromagnetism remains unchanged after 4 months of aging under the atmosphere. This work enriches the family of 2D ferromagnetic materials, which will facilitate the research progress of spintronics.

Layer-engineered large-area exfoliation of graphene

The competition between quality and productivity has been a major issue for large-scale applications of two-dimensional materials (2DMs). Until now, the top-down mechanical cleavage method has guaranteed pure perfect 2DMs, but it has been considered a poor option in terms of manufacturing. Here, we present a layer-engineered exfoliation technique for graphene that not only allows us to obtain large-size graphene, up to a millimeter size, but also allows selective thickness control. A thin metal film evaporated on graphite induces tensile stress such that spalling occurs, resulting in exfoliation of graphene, where the number of exfoliated layers is adjusted by using different metal films. Detailed spectroscopy and electron transport measurement analysis greatly support our proposed spalling mechanism and fine quality of exfoliated graphene. Our layer-engineered exfoliation technique can pave the way for the development of a manufacturing-scale process for graphene and other 2DMs in electronics and optoelectronics.

Polarization-Dependent Light Emission and Charge Creation in MoS2 Monolayers on Plasmonic Au Nanogratings

We fabricated plasmonic hybrid nanostructures consisting of MoS₂ monolayer flakes and Au nanogratings with a period of 500 nm. The angle-resolved reflectance and photoluminescence spectra of the hybrid nanostructures clearly indicated a coupling between surface plasmon polaritons (SPPs) and incoming photons. The surface photovoltage (SPV) maps could visualize the spatial distribution of net charges while shining light on the sample. Considerable polarization and wavelength dependence of the SPV signals suggested that the SPP mode enhanced the light-matter interaction and resulting exciton generation in the MoS₂ monolayer. From the photoluminescence spectra and the morphology of the suspended MoS₂ region, it could be noted that light irradiation did not much raise the temperature of the MoS₂ monolayers on the nanogratings. Nanoscopic SPV and surface topography measurements could reveal the local optoelectronic and mechanical properties of MoS₂ monolayers. This work provided us insights into the proposal of a high-performance MoS₂/metal optoelectronic devices, based on the understanding of the SPP-photon and SPP-exciton coupling.

Recent Advancements and Future Prospects in Ultrathin 2D Semiconductor-Based Photocatalysts for Water Splitting

Ultrathin two-dimensional (2D) semiconductor-mediated photocatalysts have shown their compelling potential and have arguably received tremendous attention in photocatalysis because of their superior thickness-dependent physical, chemical, mechanical and optical properties. Although numerous comprehensions about 2D semiconductor photocatalysts have been amassed up to now, low cost efficiency, degradation, kinetics of charge transfer along with recycling are still the big challenges to realize a wide application of 2D semiconductor-based photocatalysis. At present, most photocatalysts still need rare or expensive noble metals to improve the photocatalytic activity, which inhibits their commercial-scale application extremely. Thus, developing less costly, earth-abundant semiconductor-based photocatalysts with efficient conversion of sunlight energy remains the primary challenge. In this review, it begins with a brief description of the general mechanism of overall photocatalytic water splitting. Then a concise overview of different types of 2D semiconductor-mediated photocatalysts is given to figure out the advantages and disadvantages for mentioned semiconductor-based photocatalysis, including the structural property and stability, synthesize method, electrochemical property and optical properties for H2/O2 production half reaction along with overall water splitting. Finally, we conclude this review with a perspective, marked on some remaining challenges and new directions of 2D semiconductor-mediated photocatalysts.

Highly conductive nanometer-thick gold films grown on molybdenum disulfide surfaces for interconnect applications

Thin gold (Au) films (10 nm) are deposited on different substrates by using a e-beam deposition system. Compared with sapphire and SiO₂ surfaces, longer migration length of the Au adatoms is observed on MoS₂ surfaces, which helps in the formation of a single-crystal Au film on the MoS₂ surface at 200 °C. The results have demonstrated that with the assistance of van der Waals epitaxy growth mode, single-crystal 3D metals can be grown on 2D material surfaces. With the improved crystalline quality and less significant Au grain coalescence on MoS₂ surfaces, sheet resistance 2.9 Ω/sq is obtained for the thin 10 nm Au film at 100 °C, which is the lowest value reported in literature. The highly conductive thin metal film is advantageous for the application of backend interconnects for the electronic devices with reduced line widths.

Strain and Charge Doping Fingerprints of the Strong Interaction between Monolayer MoS2 and Gold

Gold-mediated exfoliation of MoS₂ has recently attracted considerable interest. The strong interaction between MoS₂ and Au facilitates preferential production of centimeter-sized monolayer MoS₂ with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS₂-Au interaction and its evolution with the MoS₂ thickness. Here, we identify the specific vibrational and binding energy fingerprints of this interaction using Raman and X-ray photoelectron spectroscopy, which indicate substantial strain and charge doping in monolayer MoS₂. Tip-enhanced Raman spectroscopy reveals heterogeneity of the MoS₂-Au interaction at the nanoscale, reflecting the spatial nonconformity between the two materials. Micro-Raman spectroscopy shows that this interaction is strongly affected by the roughness and cleanliness of the underlying Au. Our results elucidate the nature of the MoS₂-Au interaction and guide strain and charge doping engineering of MoS₂.

Epitaxial Aluminum Surface-Enhanced Raman Spectroscopy Substrates for Large-Scale 2D Material Characterization

Surface-enhanced Raman spectroscopy (SERS) is an ultrasensitive technique to identify vibrational fingerprints of trace analytes. However, present SERS techniques suffer from the lack of uniform, reproducible, and stable substrates to control the plasmonic hotspots in a wide spectral range. Here, we report the promising application of epitaxial aluminum films as a scalable plasmonic platform for SERS applications. To assess the uniformity of aluminum substrates, atomically thin transition metal dichalcogenide monolayers are used as the benchmark analyte due to their inherent two-dimensional homogeneity. Besides the distinctive spectral capability of aluminum in the ultraviolet (325 nm), we demonstrate that the aluminum substrates can even perform comparably with the silver counterparts made from single-crystalline colloidal silver crystals using the same SERS substrate design in the visible range (532 nm). This is unexpected from the prediction solely based on optical dielectric functions and illustrate the superior surface and interface properties of epitaxial aluminum SERS substrates.

Strain Effects of Vertical Separation and Horizontal Sliding in Commensurate Two-Dimensional Homojunctions

Strain, as an economic yet controllable approach for structural modulation, frequently plays a vital role in the preparation and performance optimization of two-dimensional nanomaterials (TNMs). Here, utilizing first-principles simulations, the analysis of energetics shows that the biaxial stretching and compressing could facilitate the vertical separation and horizontal sliding in graphene (Gr/Gr), hexagonal boron nitride (h-BN/h-BN), and molybdenum disulfide (MoS₂/MoS₂) bilayers. The quantification of electron redistribution between layers confirmed that the shifts of interlayer charge density (ρ_inter-) and its relative values (Δρ_inter-) are responsible for the vertical separation and horizontal sliding facilitated by biaxial strain. More effortless horizontal sliding was enabled by a smoother potential energy surface because a smaller Δρ_inter- can be acquired under compression, whereas more effortless vertical separation followed a more vulnerable surface energy because a lower ρ_inter- occurs under tensile strain. The vertical and horizontal division of strain effect provides a novel idea for further understanding its pivotal roles in strain engineering of commensurate-contact TNMs, such as mechanical exfoliation and solid lubrication.