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Kim JY, Ju X, Ang KW, Chi D. Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook. ACS NANO 2023; 17:1831-1844. [PMID: 36655854 DOI: 10.1021/acsnano.2c10737] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional materials (2DMs) have attracted a great deal of interest due to their immense potential for scientific breakthroughs and technological innovations. While some 2D transition metal dichalcogenides (TMDC) such as MoS2 and WS2 are considered as the ultimate channel materials in unltrascaled transistors as replacements for Si, there has also been increasing interest in the monolithic 3D integration of 2DMs on the Si CMOS platform or in flexible electronics as back-end-of-line transistors, memory devices/selectors, and sensors, taking advantage of 2DM properties such as a high current driving capability with low leakage current, nonvolatile switching characteristics, a large surface-to-volume ratio, and a tunable bandgap. However, the realization of both of these scenarios critically depends on the development of manufacturing-viable high-yield 2DM layers transfer from the growth substrate to the Si, since the growth of high-quality 2DM layers often requires a high-temperature growth process on template substrates. Motivated by this, extensive efforts have been made by the 2DM research community to develop various 2DM layer transfer methods, leveraging the van der Waals transfer capability of the layer-structured 2DMs. These efforts have led to a number of successful demonstrations of wafer-scale 2D TMDC layer transfer, while 2DM-enabled template growth/transfer of some functional bulk materials such as III-V, Ge, and AlN has also been demonstrated. This review surveys and compares different 2DM transfer methods developed recently, with a focus on large-area 2D TMDC film transfer along with an introduction of 2DM template-assisted van der Waals growth/transfer of non-2D thin films. We will also briefly present an outlook of our envisioned multifunctionalities in 3D integrated electronic systems enabled by monolithic 3D integration of 2DMs and III-V via van der Waals transfer and discuss possible technology options for overcoming remaining challenges.
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Affiliation(s)
- Jun-Young Kim
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Xin Ju
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Kah-Wee Ang
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Dongzhi Chi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore 138634, Singapore
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52
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Han W, Zheng X, Yang K, Tsang CS, Zheng F, Wong LW, Lai KH, Yang T, Wei Q, Li M, Io WF, Guo F, Cai Y, Wang N, Hao J, Lau SP, Lee CS, Ly TH, Yang M, Zhao J. Phase-controllable large-area two-dimensional In 2Se 3 and ferroelectric heterophase junction. NATURE NANOTECHNOLOGY 2023; 18:55-63. [PMID: 36509923 DOI: 10.1038/s41565-022-01257-3] [Citation(s) in RCA: 24] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2022] [Accepted: 10/06/2022] [Indexed: 06/17/2023]
Abstract
Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are intriguing for next-generation in-memory computing. To date, several 2D ferroelectric materials have been unveiled, among which 2D In2Se3 is the most promising, as all the paraelectric (β), ferroelectric (α) and antiferroelectric (β') phases are found in 2D quintuple layers. However, the large-scale synthesis of 2D In2Se3 films with the desired phase is still absent, and the stability for each phase remains obscure. Here we show the successful growth of centimetre-scale 2D β-In2Se3 film by chemical vapour deposition including distinct centimetre-scale 2D β'-In2Se3 film by an InSe precursor. We also demonstrate that as-grown 2D β'-In2Se3 films on mica substrates can be delaminated or transferred onto flexible or uneven substrates, yielding α-In2Se3 films through a complete phase transition. Thus, a full spectrum of paraelectric, ferroelectric and antiferroelectric 2D films can be readily obtained by means of the correlated polymorphism in 2D In2Se3, enabling 2D memory transistors with high electron mobility, and polarizable β'-α In2Se3 heterophase junctions with improved non-volatile memory performance.
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Affiliation(s)
- Wei Han
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
- Hubei Yangtze Memory Laboratories, Hubei University, Wuhan, China
| | - Xiaodong Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ke Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- Department of Computing, The Hong Kong Polytechnic University, Kowloon, China
| | - Chi Shing Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Fangyuan Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Lok Wing Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ka Hei Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Tiefeng Yang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, China
- City University of Hong Kong, Shenzhen Research Institute, Shenzhen, China
| | - Qi Wei
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Mingjie Li
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Weng Fu Io
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Feng Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Yuan Cai
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Ning Wang
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Chun-Sing Lee
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, China.
- City University of Hong Kong, Shenzhen Research Institute, Shenzhen, China.
| | - Ming Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
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53
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Huo J, Yin H, Zhang Y, Tan X, Mao Y, Zhang C, Zhang F, Zhan G, Zhang Z, Zhang Q, Xu G, Wu Z. Quasi-Volatile MoS 2 Barristor Memory for 1T Compact Neuron by Correlative Charges Trapping and Schottky Barrier Modulation. ACS APPLIED MATERIALS & INTERFACES 2022; 14:57440-57448. [PMID: 36512440 DOI: 10.1021/acsami.2c18561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Artificial neurons as the basic units of spiking neural network (SNN) have attracted increasing interest in energy-efficient neuromorphic computing. 2D transition metal dichalcogenide (TMD)-based devices have great potential for high-performance and low-power artificial neural devices, owing to their unique ion motion, interface engineering, and resistive switching behaviors. Although there are widespread applications of TMD-based artificial synapses in neural networks, TMD-based neurons are seldom reported due to the lack of bio-plausible multi-mechanisms to mimic leaking, integrating, and firing biological behaviors without external assistance. In this work, for the first time, a methodology is developed by introducing the hybrid effect of charge trapping (CT) and Schottky barrier (SB) in MoS2 FETs for barristor memory and one-transistor (1T) compact artificial neuron realization. By correlating the CT and SB processes, quasi-volatile and resistive switching behaviors are realized on the fabricated MoS2 FET and utilized to mimic the accumulating, leaking, and firing biological behaviors of neurons. Therefore, based on a single quasi-volatile CT-SB MoS2 barristor memory, a 1T compact neuron of the basic leaky-integral-and-fire (LIF) function is demonstrated without a peripheral circuit. Furthermore, a spiking neural network (SNN) based on the CT-SB MoS2 barristor neurons is simulated and implemented in pattern classification with high accuracy approaching 95.82%. This work provides a highly integrated and inherently low-energy implementation for neural networks.
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Affiliation(s)
- Jiali Huo
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing 100029, P. R. China
- University of Chinese Academy of Sciences, 100049 Beijing, P. R. China
| | - Huaxiang Yin
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing 100029, P. R. China
- University of Chinese Academy of Sciences, 100049 Beijing, P. R. China
| | - Yadong Zhang
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing 100029, P. R. China
| | - Xiaosi Tan
- The National Mobile Communications Research Laboratory of Southeast University, Nanjing 211189, P. R. China
- The Purple Mountain Laboratories, Nanjing 211111, P. R. China
| | - Yunwei Mao
- The National Mobile Communications Research Laboratory of Southeast University, Nanjing 211189, P. R. China
- The Purple Mountain Laboratories, Nanjing 211111, P. R. China
| | - Chuan Zhang
- The National Mobile Communications Research Laboratory of Southeast University, Nanjing 211189, P. R. China
- The Purple Mountain Laboratories, Nanjing 211111, P. R. China
| | - Fan Zhang
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing 100029, P. R. China
| | - Guohui Zhan
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing 100029, P. R. China
- University of Chinese Academy of Sciences, 100049 Beijing, P. R. China
| | - Zhaohao Zhang
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing 100029, P. R. China
- University of Chinese Academy of Sciences, 100049 Beijing, P. R. China
| | - Qingzhu Zhang
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing 100029, P. R. China
| | - Gaobo Xu
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing 100029, P. R. China
| | - Zhenhua Wu
- The Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing 100029, P. R. China
- University of Chinese Academy of Sciences, 100049 Beijing, P. R. China
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54
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Zhang Y, Wang L, Lei Y, Wang B, Lu Y, Yao Y, Zhang N, Lin D, Jiang Z, Guo H, Zhang J, Hu H. Self-Powered Bidirectional Photoresponse in High-Detectivity WSe 2 Phototransistor with Asymmetrical van der Waals Stacking for Retinal Neurons Emulation. ACS NANO 2022; 16:20937-20945. [PMID: 36413009 DOI: 10.1021/acsnano.2c08542] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
An artificial retina system shows a promising potential to achieve fast response, low power consumption, and high integration density for vision sensing systems. Optoelectronic sensors, which can emulate the neurobiological functionalities of retinal neurons, are crucial in the artificial retina systems. Here, we propose a WSe2 phototransistor with asymmetrical van der Waals (vdWs) stacking that can be used as an optoelectronic sensor in artificial retina systems. Through the utilization of the gate-tunable self-powered bidirectional photoresponse of this phototransistor, the neurobiological functionalities of both bipolar cells and cone cells, as well as the hierarchical connectivity between these two types of retinal neurons, are successfully mimicked by a single device. This self-powered bidirectional photoresponse is attributed to the asymmetrical vdWs stacking structure, which enables the transition from an n-p to p+-p homojunction in the WSe2 channel under different polarities of gate bias. Moreover, the detectivity and ON/OFF ratio of this phototransistor reach as high as 1.8 × 1013 Jones and 5.3 × 104, respectively, and a rise/fall time <80 μs is achieved, as well, which reveals good photodetection performance. The proof of this device provides a pathway for the future development of neuromorphic vision devices and systems.
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Affiliation(s)
- Yichi Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Liming Wang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Yuanying Lei
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Bo Wang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Yao Lu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Youyuan Yao
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Ningning Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Dongdong Lin
- Qian Xuesen Collaborative Research Center of Astrochemistry and Space Life Sciences, Department of Microelectronic Science and Engineering, Ningbo University, Ningbo315211, China
| | - Zuimin Jiang
- Department of Physics, Fudan University, Shanghai200433, China
| | - Hui Guo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Jincheng Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Huiyong Hu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
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55
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Liu Y, Wang X, Fan F, Li C. Bulk Photovoltage Effect in Ferroelectric BaTiO 3. J Phys Chem Lett 2022; 13:11071-11075. [PMID: 36416728 DOI: 10.1021/acs.jpclett.2c03194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Due to the unusual charge separation mechanism and anomalous photovoltaic effects, the bulk photovoltage effect in ferroelectric semiconductors has attracted a great deal of attention in solar energy conversion, especially in attempts to utilize nonthermalized carriers. Among the various mechanisms that have been proposed for interpreting the photovoltaic effect, a shift mechanism was derived from quantum phenomena, which have been modeled and studied for many years. However, the concurrent shift and ballistic mechanism make investigating the ferroelectric bulk photovoltage effect complex and challenging. Here, taking a tetragonal ferroelectric BaTiO3 single crystal as a prototype, we report an approach for distinguishing the shift and ballistic mechanism-induced surface photovoltage. The results indicate different effects on the charge separation of the ballistic mechanism and shift mechanisms, as evidenced by surface photovoltage measurement. Interestingly, the shift and ballistic mechanisms afford charge separation in two opposite directions but on the same order of magnitude under monochromatic superband illumination. Our results provide facile and efficient methods for clarifying the shift and ballistic mechanisms in ferroelectrics.
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Affiliation(s)
- Yong Liu
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Dalian116023, China
| | - Xun Wang
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Dalian116023, China
| | - Fengtao Fan
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Dalian116023, China
| | - Can Li
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Dalian116023, China
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56
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Liu K, Dang B, Zhang T, Yang Z, Bao L, Xu L, Cheng C, Huang R, Yang Y. Multilayer Reservoir Computing Based on Ferroelectric α-In 2 Se 3 for Hierarchical Information Processing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108826. [PMID: 35064981 DOI: 10.1002/adma.202108826] [Citation(s) in RCA: 26] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 01/10/2022] [Indexed: 06/14/2023]
Abstract
Dynamic physical systems such as reservoir computing (RC) architectures show a great prospect in temporal information processing, whereas hierarchical information processing capability is still lacking due to the absence of advanced multilayer reservoir elements. Here, a stackable reservoir system is constructed based on ferroelectric α-In2 Se3 devices with voltage input and output, which is realized by dynamic voltage division between a ferroelectric field-effect transistor and a planar device and therefore allows the reservoirs to cascade, enabling multilayer RC. Fast Fourier transformation analysis shows high-harmonic generation in the first layer as a result of inherent nonlinearity of the reservoir, and progressive low-pass filtering effect is realized where higher-frequency components are progressively filtered in deeper-layer RCs. Time-series prediction and waveform classification tasks are also demonstrated, serving as evidence for the memory capacity and computing capability of the deep reservoir architecture. This work can provide a promising pathway in exploiting emerging 2D materials and dynamics for advanced neuromorphic computing architectures.
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Affiliation(s)
- Keqin Liu
- Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Bingjie Dang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Teng Zhang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Zhen Yang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Lin Bao
- Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Liying Xu
- Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Caidie Cheng
- Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Ru Huang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China
- Center for Brain Inspired Chips, Institute for Artificial Intelligence, Peking University, Beijing, 100871, China
- Center for Brain Inspired Intelligence, Chinese Institute for Brain Research (CIBR), Beijing, 102206, China
| | - Yuchao Yang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), School of Integrated Circuits, Peking University, Beijing, 100871, China
- Center for Brain Inspired Chips, Institute for Artificial Intelligence, Peking University, Beijing, 100871, China
- Center for Brain Inspired Intelligence, Chinese Institute for Brain Research (CIBR), Beijing, 102206, China
- Beijing Academy of Artificial Intelligence, Beijing, 100084, China
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57
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Wang S, Liu X, Zhou P. The Road for 2D Semiconductors in the Silicon Age. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106886. [PMID: 34741478 DOI: 10.1002/adma.202106886] [Citation(s) in RCA: 30] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.
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Affiliation(s)
- Shuiyuan Wang
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoxian Liu
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
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58
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Liu Y, Zhang M, Wang Z, He J, Zhang J, Ye S, Wang X, Li D, Yin H, Zhu Q, Jing H, Weng Y, Pan F, Chen R, Li C, Fan F. Bipolar charge collecting structure enables overall water splitting on ferroelectric photocatalysts. Nat Commun 2022; 13:4245. [PMID: 35869136 PMCID: PMC9307613 DOI: 10.1038/s41467-022-32002-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Accepted: 07/13/2022] [Indexed: 11/09/2022] Open
Abstract
AbstractFerroelectrics are considered excellent photocatalytic candidates for solar fuel production because of the unidirectional charge separation and above-gap photovoltage. Nevertheless, the performance of ferroelectric photocatalysts is often moderate. A few studies showed that these types of photocatalysts could achieve overall water splitting. This paper proposes an approach to fabricating interfacial charge-collecting nanostructures on positive and negative domains of ferroelectric, enabling water splitting in ferroelectric photocatalysts. The present study observes efficient accumulations of photogenerated electrons and holes within their thermalization length (~50 nm) around Au nanoparticles located in the positive and negative domains of a BaTiO3 single crystal. Photocatalytic overall water splitting is observed on a ferroelectric BaTiO3 single crystal after assembling oxidation and reduction cocatalysts on the positively and negatively charged Au nanoparticles, respectively. The fabrication of bipolar charge-collecting structures on ferroelectrics to achieve overall water splitting offers a way to utilize the energetic photogenerated charges in solar energy conversion.
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59
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Xue F, Zhang C, Ma Y, Wen Y, He X, Yu B, Zhang X. Integrated Memory Devices Based on 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201880. [PMID: 35557021 DOI: 10.1002/adma.202201880] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2022] [Revised: 05/07/2022] [Indexed: 06/15/2023]
Abstract
With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfill these demands, 2D materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D-material-based memory-device arrays with different working mechanisms, including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain-inspired computing or sensing with extraordinary performance, architectures, and functionalities. Here, recent research into integrated, state-of-the-art memory devices made from 2D materials, as well as their implications for brain-inspired computing are surveyed. The existing challenges at the array level are discussed, and the scope for future research is presented.
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Affiliation(s)
- Fei Xue
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Wen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xin He
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Bin Yu
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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60
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Zhang X, Zhang Y, Yu H, Zhao H, Cao Z, Zhang Z, Zhang Y. Van der Waals-Interface-Dominated All-2D Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2207966. [PMID: 36353883 DOI: 10.1002/adma.202207966] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 11/06/2022] [Indexed: 06/16/2023]
Abstract
The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.
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Affiliation(s)
- Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yanzhe Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Hang Zhao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhihong Cao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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61
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Chen Y, Li D, Ren H, Tang Y, Liang K, Wang Y, Li F, Song C, Guan J, Chen Z, Lu X, Xu G, Li W, Liu S, Zhu B. Highly Linear and Symmetric Synaptic Memtransistors Based on Polarization Switching in Two-Dimensional Ferroelectric Semiconductors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203611. [PMID: 36156393 DOI: 10.1002/smll.202203611] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2022] [Revised: 09/01/2022] [Indexed: 06/16/2023]
Abstract
Brain-inspired neuromorphic computing hardware based on artificial synapses offers efficient solutions to perform computational tasks. However, the nonlinearity and asymmetry of synaptic weight updates in reported artificial synapses have impeded achieving high accuracy in neural networks. Here, this work develops a synaptic memtransistor based on polarization switching in a two-dimensional (2D) ferroelectric semiconductor (FES) of α-In2 Se3 for neuromorphic computing. The α-In2 Se3 memtransistor exhibits outstanding synaptic characteristics, including near-ideal linearity and symmetry and a large number of programmable conductance states, by taking the advantages of both memtransistor configuration and electrically configurable polarization states in the FES channel. As a result, the α-In2 Se3 memtransistor-type synapse reaches high accuracy of 97.76% for digit patterns recognition task in simulated artificial neural networks. This work opens new opportunities for using multiterminal FES memtransistors in advanced neuromorphic electronics.
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Affiliation(s)
- Yitong Chen
- School of Materials and Engineering, Zhejiang University, Hangzhou, 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Dingwei Li
- School of Materials and Engineering, Zhejiang University, Hangzhou, 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Huihui Ren
- School of Materials and Engineering, Zhejiang University, Hangzhou, 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Yingjie Tang
- School of Materials and Engineering, Zhejiang University, Hangzhou, 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Kun Liang
- School of Materials and Engineering, Zhejiang University, Hangzhou, 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Yan Wang
- School of Materials and Engineering, Zhejiang University, Hangzhou, 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Fanfan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Chunyan Song
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Jiaqi Guan
- Instrumentation and Service Centre for Physical Sciences, Westlake University, Hangzhou, 310024, China
| | - Zhong Chen
- Instrumentation and Service Centre for Molecular Sciences, Westlake University, Hangzhou, 310024, China
| | - Xingyu Lu
- Instrumentation and Service Centre for Molecular Sciences, Westlake University, Hangzhou, 310024, China
| | - Guangwei Xu
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Wenbin Li
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
| | - Shi Liu
- School of Science, Westlake University, Hangzhou, Zhejiang, 310024, China
| | - Bowen Zhu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China
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62
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Wang Z, Wang W, Liu P, Liu G, Li J, Zhao J, Zhou Z, Wang J, Pei Y, Zhao Z, Li J, Wang L, Jian Z, Wang Y, Guo J, Yan X. Superlow Power Consumption Artificial Synapses Based on WSe 2 Quantum Dots Memristor for Neuromorphic Computing. Research (Wash D C) 2022; 2022:9754876. [PMID: 36204247 PMCID: PMC9513833 DOI: 10.34133/2022/9754876] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2022] [Accepted: 08/08/2022] [Indexed: 11/26/2022] Open
Abstract
As the emerging member of zero-dimension transition metal dichalcogenide, WSe2 quantum dots (QDs) have been applied to memristors and exhibited better resistance switching characteristics and miniaturization size. However, low power consumption and high reliability are still challenges for WSe2 QDs-based memristors as synaptic devices. Here, we demonstrate a high-performance, superlow power consumption memristor device with the structure of Ag/WSe2 QDs/La0.3Sr0.7MnO3/SrTiO3. The device displays excellent resistive switching memory behavior with a ROFF/RON ratio of ~5 × 103, power consumption per switching as low as 0.16 nW, very low set, and reset voltage of ~0.52 V and~ -0.19 V with excellent cycling stability, good reproducibility, and decent data retention capability. The superlow power consumption characteristic of the device is further proved by the method of density functional theory calculation. In addition, the influence of pulse amplitude, duration, and interval was studied to gradually modulating the conductance of the device. The memristor has also been demonstrated to simulate different functions of artificial synapses, such as excitatory postsynaptic current, spike timing-dependent plasticity, long-term potentiation, long-term depression, and paired-pulse facilitation. Importantly, digit recognition ability based on the WSe2 QDs device is evaluated through a three-layer artificial neural network, and the digit recognition accuracy after 40 times of training can reach up to 94.05%. This study paves a new way for the development of memristor devices with advanced significance for future low power neuromorphic computing.
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Affiliation(s)
- Zhongrong Wang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Wei Wang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Pan Liu
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Gongjie Liu
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Jiahang Li
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Jianhui Zhao
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Zhenyu Zhou
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Jingjuan Wang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Yifei Pei
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Zhen Zhao
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Jiaxin Li
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Lei Wang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Zixuan Jian
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
| | - Yichao Wang
- Department of Clinical Laboratory Medicine, Taizhou Central Hospital (Taizhou University Hospital), Taizhou 318000, China
| | - Jianxin Guo
- College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Xiaobing Yan
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Hebei University, Baoding 071002, China
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63
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Guo Y, Yu X, Zhang Y, Zhang X, Yuan S, Li Y, Yang SA, Wang J. 2D Multiferroicity with Ferroelectric Switching Induced Spin-Constrained Photoelectricity. ACS NANO 2022; 16:11174-11181. [PMID: 35816175 DOI: 10.1021/acsnano.2c04017] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Multiferroic materials with tunable magnetoelectric orders enable the integration of sensing, data storage, and processing into one single device. The scarcity of single-phase multiferroics spurs extensive research in pursuit of composite systems combining different types of ferroic materials. In this work, spin-constrained photoelectric memory is proposed in two-dimensional (2D) layered magnetic/ferroelectric heterostructures, holding the possibility of low-power electrical write operation and nondestructive optical read operation. The ground state of ferromagnetic (FM) and antiferromagnetic (AFM) orderings in the magnetic layer is altered by polarization direction of the ferroelectric layer. Specifically, the FM heterostructure exhibits a type-II band alignment. Due to the light-induced charge transfer, spin-polarized/unpolarized current arises from the FM/AFM state, which can be recorded as the "1"/"0" state and served for logic processing and memory applications. Our first-principles calculations demonstrate that the NiI2/In2Se3 heterobilayer is an ideal candidate to realize such a spin-dependent photoelectric memory. The reversible FM state (easy-axis magnetic anisotropy) and AFM state (easy-plane magnetic orientation) in the NiI2 layer originate from interfacial charge transfer and effective electric field due to the proximity effect. This work offers considerable potential in the integration of memory processing capability into one single device with 2D layered multiferroic heterostructures.
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Affiliation(s)
- Yilv Guo
- School of Physics, Southeast University, Nanjing 211189, China
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Xing Yu
- School of Physics, Southeast University, Nanjing 211189, China
| | - Yehui Zhang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Xiwen Zhang
- School of Mechanism Engineering & School of Physics, Southeast University, Nanjing 211189, China
| | - Shijun Yuan
- School of Physics, Southeast University, Nanjing 211189, China
| | - Yafei Li
- Jiangsu Collaborative Innovation Centre of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Material Science, Nanjing Normal University, Nanjing 210023, China
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Jinlan Wang
- School of Physics, Southeast University, Nanjing 211189, China
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64
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Baek S, Yoo HH, Ju JH, Sriboriboon P, Singh P, Niu J, Park J, Shin C, Kim Y, Lee S. Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200566. [PMID: 35570404 PMCID: PMC9313508 DOI: 10.1002/advs.202200566] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2022] [Revised: 04/21/2022] [Indexed: 05/28/2023]
Abstract
To address the demands of emerging data-centric computing applications, ferroelectric field-effect transistors (Fe-FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic-memory functionalities. Herein, the fabrication and application of an Fe-FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2 S6 /α-In2 Se3 ), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α-In2 Se3 , the fabricated Fe-FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization-induced wider hysteresis loop of the double-stacked ferroelectrics compared to single ferroelectric layers. The Landau-Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe-FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106 , long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low-dimensional ferroelectronics.
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Affiliation(s)
- Sungpyo Baek
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon440‐746Korea
| | - Hyun Ho Yoo
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon440‐746Korea
| | - Jae Hyeok Ju
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon440‐746Korea
| | - Panithan Sriboriboon
- School of Advanced Materials Science and EngineeringSungkyunkwan University (SKKU)Suwon440‐746Korea
| | - Prashant Singh
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon440‐746Korea
| | - Jingjie Niu
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon440‐746Korea
| | - Jin‐Hong Park
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon440‐746Korea
| | - Changhwan Shin
- School of Electrical EngineeringKorea UniversitySeoul02841Korea
| | - Yunseok Kim
- School of Advanced Materials Science and EngineeringSungkyunkwan University (SKKU)Suwon440‐746Korea
| | - Sungjoo Lee
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon440‐746Korea
- Department of Nano EngineeringSungkyunkwan UniversitySuwon440‐746Korea
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65
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Wan S, Peng Q, Wu Z, Zhou Y. Nonvolatile Ferroelectric Memory with Lateral β/α/β In 2Se 3 Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2022; 14:25693-25700. [PMID: 35623065 DOI: 10.1021/acsami.2c04032] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The electric dipole locking effect observed in van der Waals (vdW) ferroelectric α-In2Se3 has resulted in a surge of applied research in electronics with nonvolatile functionality. However, ferroelectric tunnel junctions with advantages of lower power consumption and faster writing/reading operations have not been realized in α-In2Se3. Here, we demonstrate the tunneling electroresistance effect in a lateral β/α/β In2Se3 heterojunction built by local laser irradiation. Switchable in-plane polarizations of the vdW ferroelectric control the tunneling conductance of the heterojunction device by 4000% of magnitude. The electronic logic bit can be represented and stored with different orientations of electric dipoles. This prototype enables a new approach to rewritable nonvolatile memory with in-plane ferroelectricity in vdW 2D materials.
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Affiliation(s)
- Siyuan Wan
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
- Jiangxi Key Laboratory for Two-dimensional Materials and Devices, Nanchang University, Nanchang 330031, China
| | - Qi Peng
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
- Jiangxi Key Laboratory for Two-dimensional Materials and Devices, Nanchang University, Nanchang 330031, China
| | - Ziyu Wu
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
- Jiangxi Key Laboratory for Two-dimensional Materials and Devices, Nanchang University, Nanchang 330031, China
| | - Yangbo Zhou
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
- Jiangxi Key Laboratory for Two-dimensional Materials and Devices, Nanchang University, Nanchang 330031, China
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66
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Wang Y, Liu D, Zhang Y, Fan L, Ren Q, Ma S, Zhang M. Stretchable Temperature-Responsive Multimodal Neuromorphic Electronic Skin with Spontaneous Synaptic Plasticity Recovery. ACS NANO 2022; 16:8283-8293. [PMID: 35451307 DOI: 10.1021/acsnano.2c02089] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Multimodal electronic skin devices capable of detecting multimodal signals provide the possibility for health monitoring. Sensing and memory for temperature and deformation by human skin are of great significance for the perception and monitoring of physiological changes of the human body. Electronic skin is highly expected to have similar functions as human skin. Here, by implementing intrinsically stretchable neuromorphic transistors with mechanoreceptors and thermoreceptors in an array, we have realized stretchable temperature-responsive multimodal neuromorphic electronic skin (STRM-NES) with both sensory and memory functions, in which synaptic plasticity can be modulated by multiple modalities, in situ temperature variations, and stretching deformations. Temperature-responsive functions, spontaneous recovery, and temperature-dependent multitrial learning are proposed. Furthermore, a stretchable temperature neuromorphic array composed of multiple fully functional subcells is demonstrated to identify temperature distributions and variations at different regions and conditions after various strains of skin. The STRM-NES has temperature- and strain-responsive neuromorphic functions, excellent self-healing, and reusable capability, showing similar abilities as human skin to sense, transmit, memory, and recovery from external stimuli. It is expected to facilitate the development of wearable electronics, intelligent robotics, and prosthetic applications.
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Affiliation(s)
- Yarong Wang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China
| | - Dexing Liu
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China
| | - Yiming Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China
| | - Lingchong Fan
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China
| | - Qinqi Ren
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China
| | - Shenhui Ma
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China
| | - Min Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China
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67
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Xu X, Zhong T, Zuo N, Li Z, Li D, Pi L, Chen P, Wu M, Zhai T, Zhou X. High- TC Two-Dimensional Ferroelectric CuCrS 2 Grown via Chemical Vapor Deposition. ACS NANO 2022; 16:8141-8149. [PMID: 35441509 DOI: 10.1021/acsnano.2c01470] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) ferroelectrics have attracted intensive attention. However, the 2D ferroelectrics remain rare, and especially few of them represent high ferroelectric transition temperature (TC), which is important for the usability of ferroelectrics. Herein, CuCrS2 nanoflakes are synthesized by salt-assisted chemical vapor deposition and exhibit switchable ferroelectric polarization even when the thickness is downscaled to 6 nm. On the contrary, a CuCrS2 nanoflake shows a TC as high as ∼700 K, which can be attributed to the robust tetrahedral bonding configurations of Cu cations. Such robustness can be further clarified by a theoretically predicted high order-disorder transition barrier and structure evolution from 600 to 800 K. Additionally, the interlocked out-of-plane (OOP) and in-plane (IP) ferroelectric domains are observed and two kinds of devices based on OOP and IP polarizations are demonstrated.
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Affiliation(s)
- Xiang Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Tingting Zhong
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, P. R. China
| | - Nian Zuo
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Lejing Pi
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Ping Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
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68
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Chen C, Liu H, Lai Q, Mao X, Fu J, Fu Z, Zeng H. Large-Scale Domain Engineering in Two-Dimensional Ferroelectric CuInP 2S 6 via Giant Flexoelectric Effect. NANO LETTERS 2022; 22:3275-3282. [PMID: 35412313 DOI: 10.1021/acs.nanolett.2c00130] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Room-temperature ferroelectricity in two-dimensional (2D) materials is a potential for developing atomic-scale functional devices. However, as a key step for the technology implementations of 2D ferroelectrics in electronics, the controllable generation of uniform domains remains challenging at the current stage because domain engineering through an external electric field at the 2D limit inevitably leads to large leakage currents and material breakdown. Here, we demonstrate a voltage-free method, the flexoelectric effect, to artificially generate large-scale stripe domains in 2D ferroelectric CuInP2S6 with single domain lateral size at the scale of several hundred microns. With giant strain gradients (∼106 m-1), we mechanically switch the out-of-plane polarization in ultrathin CuInP2S6. The flexoelectric control of polarization is understood with a distorted Landau-Ginzburg-Devonshire double well model. Through substrate strain engineering, the stripe domain density is controllable. Our results highlight the potential of developing van der Waals ferroelectrics-based flexible electronics.
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Affiliation(s)
- Chen Chen
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Heng Liu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Qinglin Lai
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xiaoyu Mao
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jun Fu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zhaoming Fu
- College of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China
- Yunnan Key Laboratory of Optoelectronic Information Technology, Kunming 650500, China
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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69
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Singh P, Baek S, Yoo HH, Niu J, Park JH, Lee S. Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications. ACS NANO 2022; 16:5418-5426. [PMID: 35234041 DOI: 10.1021/acsnano.1c09136] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Channel current conduction modulation with the spontaneous polarization of ferroelectric films in ferroelectric field-effect transistors (FeFETs) has been widely investigated. Low interface quality and thermodynamic instability owing to the presence of dangling bonds in the conventional ferroelectrics have limited the memory retention and endurance of FeFETs. This, in turn, prevents their commercialization. However, the atomically thin nature of 2D ferroelectric, semiconducting, and insulating films facilitate the achievement of trap-free interfaces as van der Waal heterostructures (vdWHs) to develop FeFETs with long data retention and endurance characteristics. Here, we demonstrate a 2D vdWH FeFET fabricated with ferroelectric CuInP2S6 (CIPS), hexagonal boron nitride (h-BN) as the dielectric, and InSe as the ferroelectric semiconductor channel. The device shows an excellent performance as nonvolatile memory (NVM) with its large memory window (4.6 V at a voltage sweep of 5 V), high drain current on/off ratio (>104), high endurance, and long data retention (>104 s). These results demonstrate the considerable potential of vdWHs for the development of FeFETs for logic and NVM applications.
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Affiliation(s)
- Prashant Singh
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Sungpyo Baek
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Hyun Ho Yoo
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Jingjie Niu
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Jin-Hong Park
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Sungjoo Lee
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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70
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Ding G, Chen RS, Xie P, Yang B, Shang G, Liu Y, Gao L, Mo WA, Zhou K, Han ST, Zhou Y. Filament Engineering of Two-Dimensional h-BN for a Self-Power Mechano-Nociceptor System. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200185. [PMID: 35218611 DOI: 10.1002/smll.202200185] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
The switching variability caused by intrinsic stochasticity of the ionic/atomic motions during the conductive filaments (CFs) formation process largely limits the applications of diffusive memristors (DMs), including artificial neurons, neuromorphic computing and artificial sensory systems. In this study, a DM device with improved device uniformity based on well-crystallized two-dimensional (2D) h-BN, which can restrict the CFs formation from three to two dimensions due to the high migration barrier of Ag+ between h-BN interlayer, is developed. The BN-DM has potential arrayable feature with high device yield of 88%, which can be applied for building a reservoir computing system for digital pattern recognition with high accuracy rate of 96%, and used as an artificial nociceptor to sense the external noxious stimuli and mimic the important biological nociceptor properties. By connecting the BN-DM to a self-made triboelectric nanogenerator (TENG), a self-power mechano-nociceptor system, which can successfully mimic the important nociceptor features of "threshold", "relaxation" and "allodynia" is designed.
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Affiliation(s)
- Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ruo-Si Chen
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Peng Xie
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Baidong Yang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Gang Shang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yang Liu
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Lili Gao
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Wen-Ai Mo
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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71
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 89] [Impact Index Per Article: 44.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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72
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Xue W, Jiang Q, Wang F, He R, Pang R, Yang H, Wang P, Yang R, Zhong Z, Zhai T, Xu X. Discovery of Robust Ferroelectricity in 2D Defective Semiconductor α-Ga 2 Se 3. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105599. [PMID: 34881497 DOI: 10.1002/smll.202105599] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Revised: 11/15/2021] [Indexed: 06/13/2023]
Abstract
2D ferroelectrics with robust polar order in the atomic-scale thickness at room temperature are needed to miniaturize ferroelectric devices and tackle challenges imposed by traditional ferroelectrics. These materials usually have polar point group structure regarding as a prerequisite of ferroelectricity. Yet, to introduce polar structure into otherwise nonpolar 2D materials for producing ferroelectricity remains a challenge. Here, by combining first-principles calculations and experimental studies, it is reported that the native Ga vacancy-defects located in the asymmetrical sites in cubic defective semiconductor α-Ga2 Se3 can induce polar structure. Meanwhile, the induced polarization can be switched in a moderate energy barrier. The switched polarization is observed in 2D α-Ga2 Se3 nanoflakes of ≈4 nm with a high switching temperature up to 450 K. Such polarization switching could arise from the displacement of Ga vacancy between neighboring asymmetrical sites by applying an electric field. This work removes the point group limit for ferroelectricity, expanding the range of 2D ferroelectrics into the native defective semiconductors.
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Affiliation(s)
- Wuhong Xue
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
| | - Qitao Jiang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ri He
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Ruixue Pang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
| | - Huali Yang
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Peng Wang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
| | - Ruilong Yang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
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73
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Zhang Z, Wang S, Liu C, Xie R, Hu W, Zhou P. All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition. NATURE NANOTECHNOLOGY 2022; 17:27-32. [PMID: 34750561 DOI: 10.1038/s41565-021-01003-1] [Citation(s) in RCA: 90] [Impact Index Per Article: 45.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Accepted: 09/08/2021] [Indexed: 06/13/2023]
Abstract
With the advent of the Internet of Things era, the detection and recognition of moving objects is becoming increasingly important1. The current motion detection and recognition (MDR) technology based on the complementary metal oxide semiconductor (CMOS) image sensors (CIS) platform contains redundant sensing, transmission conversion, processing and memory modules, rendering the existing systems bulky and inefficient in comparison to the human retina. Until now, non-memory capable vision sensors have only been used for static targets, rather than MDR. Here, we present a retina-inspired two-dimensional (2D) heterostructure based retinomorphic hardware device with all-in-one perception, memory and computing capabilities for the detection and recognition of moving trolleys. The proposed 2D retinomorphic device senses an optical stimulus to generate progressively tuneable positive/negative photoresponses and memorizes it, combined with interframe differencing computations, to achieve 100% separation detection of moving trichromatic trolleys without ghosting. The detected motion images are fed into a conductance mapped neural network to achieve fast trolley recognition in as few as four training epochs at 10% noise level, outperforming previous results from similar customized datasets. The prototype demonstration of a 2D retinomorphic device with integrated perceptual memory and computation provides the possibility of building compact, efficient MDR hardware.
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Affiliation(s)
- Zhenhan Zhang
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Shuiyuan Wang
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai, China
| | - Chunsen Liu
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai, China
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
| | - Peng Zhou
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai, China.
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, China.
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74
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Cheng M, Zhao X, Zeng Y, Wang P, Wang Y, Wang T, Pennycook SJ, He J, Shi J. Phase-Tunable Synthesis and Etching-Free Transfer of Two-Dimensional Magnetic FeTe. ACS NANO 2021; 15:19089-19097. [PMID: 34697943 DOI: 10.1021/acsnano.1c05738] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) Fe-chalcogenides (e.g., FeS, FeSe, and FeTe, etc.) have sparked extensive interest due to their rich phase diagrams including superconductivity, magnetism, and topological state, as well as versatile applications in electronic devices and energy related fields. However, the phase-tunable synthesis and green transfer of such fascinating materials still remain challenging. Herein, we develop a temperature-mediated chemical vapor deposition (CVD) approach to grow ultrathin nonlayered hexagonal and layered tetragonal FeTe nanosheets on mica substrates, with their thicknesses down to ∼2.3 and ∼4.0 nm, respectively. Interestingly, we have observed exciting ferromagnetism with the Curie temperature approaching ∼300 K and high conductivity (∼1.96 × 105 S m-1) in 2D hexagonal FeTe. More significantly, we have designed a swift, high-efficiency, and etching-free method for the transfer of 2D FeTe nanosheets onto arbitrary substrates, and such a transfer strategy enables the cyclic utilization of growth substrates. These results should propel the further development of phase-tunable synthesis and green transfer of 2D Fe-chalcogenides, as well as their potential applications in spintronic devices.
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Affiliation(s)
- Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yan Zeng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Peng Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Ti Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Stephen John Pennycook
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
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75
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Hao S, Zhong S, Ji X, Pang KY, Wang N, Li H, Jiang Y, Lim KG, Chong TC, Zhao R, Loke DK. Activating Silent Synapses in Sulfurized Indium Selenide for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:60209-60215. [PMID: 34878241 DOI: 10.1021/acsami.1c19062] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The transformation from silent to functional synapses is accompanied by the evolutionary process of human brain development and is essential to hardware implementation of the evolutionary artificial neural network but remains a challenge for mimicking silent to functional synapse activation. Here, we developed a simple approach to successfully realize activation of silent to functional synapses by controlled sulfurization of chemical vapor deposition-grown indium selenide crystals. The underlying mechanism is attributed to the migration of sulfur anions introduced by sulfurization. One of our most important findings is that the functional synaptic behaviors can be modulated by the degree of sulfurization and temperature. In addition, the essential synaptic behaviors including potentiation/depression, paired-pulse facilitation, and spike-rate-dependent plasticity are successfully implemented in the partially sulfurized functional synaptic device. The developed simple approach of introducing sulfur anions in layered selenide opens an effective new avenue to realize activation of silent synapses for application in evolutionary artificial neural networks.
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Affiliation(s)
- Song Hao
- Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
- Department of Science, Mathematics and Technology, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Shuai Zhong
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing 100084, China
| | - Xinglong Ji
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing 100084, China
| | - Khin Yin Pang
- Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Nan Wang
- Department of Science, Mathematics and Technology, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Huimin Li
- Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Yu Jiang
- Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Kian Guan Lim
- Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Tow Chong Chong
- Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Rong Zhao
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing 100084, China
| | - Desmond K Loke
- Department of Science, Mathematics and Technology, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
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76
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Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor. Sci Bull (Beijing) 2021; 66:2288-2296. [PMID: 36654457 DOI: 10.1016/j.scib.2021.06.020] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2021] [Revised: 05/22/2021] [Accepted: 06/15/2021] [Indexed: 01/20/2023]
Abstract
Exploring materials with multiple properties who can endow a simple device with integrated functionalities has attracted enormous attention in the microelectronic field. One reason is the imperious demand for processors with continuously higher performance and totally new architecture. Combining ferroelectric with semiconducting properties is a promising solution. Here, we show that logic, in-memory computing, and optoelectrical logic and non-volatile computing functionalities can be integrated into a single transistor with ferroelectric semiconducting α-In2Se3 as the channel. Two-input AND, OR, and non-volatile NOR and NAND logic operations with current on/off ratios reaching up to five orders, good endurance (1000 operation cycles), and fast operating speed (10 μs) are realized. In addition, optoelectrical OR logic and non-volatile implication (IMP) operations, as well as ternary-input optoelectrical logic and in-memory computing functions are achieved by introducing light as an additional input signal. Our work highlights the potential of integrating complex logic functions and new-type computing into a simple device based on emerging ferroelectric semiconductors.
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77
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Zhang C, Li Y, Ma C, Zhang Q. Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100086] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022] Open
Affiliation(s)
- Cheng Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
| | - Chunlan Ma
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
| | - Qichun Zhang
- Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR 999077 China
- Center of Super-Diamond and Advanced Films (COSDAF) City University of Hongkong Hong Kong SAR 999077 China
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78
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Seo S, Lee JJ, Lee RG, Kim TH, Park S, Jung S, Lee HK, Andreev M, Lee KB, Jung KS, Oh S, Lee HJ, Kim KS, Yeom GY, Kim YH, Park JH. An Optogenetics-Inspired Flexible van der Waals Optoelectronic Synapse and its Application to a Convolutional Neural Network. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102980. [PMID: 34423469 DOI: 10.1002/adma.202102980] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2021] [Revised: 06/06/2021] [Indexed: 06/13/2023]
Abstract
Optogenetics refers to a technique that uses light to modulate neuronal activity with a high spatiotemporal resolution, which enables the manipulation of learning and memory functions in the human brain. This strategy of controlling neuronal activity using light can be applied for the development of intelligent systems, including neuromorphic and in-memory computing systems. Herein, a flexible van der Waals (vdW) optoelectronic synapse is reported, which is a core component of optogenetics-inspired intelligent systems. This synapse is fabricated on 2D vdW layered rhenium disulfide (ReS2 ) that features an inherent photosensitive memory nature derived from the persistent photoconductivity (PPC) effect, successfully mimicking the dynamics of biological synapses. Based on first-principles calculations, the PPC effect is identified to originate from sulfur vacancies in ReS2 that have an inherent tendency to form shallow defect states near the conduction band edges and under optical excitation lead to large lattice relaxation. Finally, the feasibility of applying the synapses in optogenetics-inspired intelligent systems is demonstrated via training and inference tasks for the CIFAR-10 dataset using a convolutional neural network composed of vdW optoelectronic synapse devices.
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Affiliation(s)
- Seunghwan Seo
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Je-Jun Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Ryong-Gyu Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Tae Hyung Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Sangyong Park
- Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 16419, Korea
- Flash Process Architecture Team, Samsung Electronics Co. Ltd, Pyeongtaek, 17786, Korea
| | - Sooyoung Jung
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Hyun-Kyu Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Maksim Andreev
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Kyeong-Bae Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Kil-Su Jung
- Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 16419, Korea
- Memory Technology Design Team, Samsung Electronics Co. Ltd, Hwasung, 18448, Korea
| | - Seyong Oh
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
- Querrey Simpson Institute for Bioelectronics (QSIB), Northwestern University, Evanston, IL, 60208, USA
| | - Ho-Jun Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Ki Seok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, MA, 02139, USA
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16417, Korea
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16417, Korea
| | - Yong-Hoon Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16417, Korea
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Tong L, Peng Z, Lin R, Li Z, Wang Y, Huang X, Xue KH, Xu H, Liu F, Xia H, Wang P, Xu M, Xiong W, Hu W, Xu J, Zhang X, Ye L, Miao X. 2D materials-based homogeneous transistor-memory architecture for neuromorphic hardware. Science 2021; 373:1353-1358. [PMID: 34413170 DOI: 10.1126/science.abg3161] [Citation(s) in RCA: 72] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
[Figure: see text].
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Affiliation(s)
- Lei Tong
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Zhuiri Peng
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Runfeng Lin
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Zheng Li
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Yilun Wang
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xinyu Huang
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Kan-Hao Xue
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Hangyu Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Feng Liu
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, Hubei 430072, China
| | - Hui Xia
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Mingsheng Xu
- School of Micro-Nano Electronics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
| | - Wei Xiong
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jianbin Xu
- Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, China
| | - Xinliang Zhang
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Lei Ye
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xiangshui Miao
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
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80
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hu H, Wen G, Wen J, Huang L, Zhao M, Wu H, Sun Z. Ambipolar Charge Storage in Type-I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor-Based Memories. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100513. [PMID: 34174170 PMCID: PMC8373160 DOI: 10.1002/advs.202100513] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/08/2021] [Revised: 05/29/2021] [Indexed: 06/13/2023]
Abstract
Efficient charge storage media play a pivotal role in transistor-based memories and thus are under intense research. In this work, the charge storage ability of type-I InP/ZnS core/shell quantum dots is well revealed through studying a pentacene-based organic transistor with the quantum dots (QDs) integrated. The quantum well-like energy band structure enables the QDs to directly confine either holes or electrons in the core, signifying a dielectric layer-free nonvolatile memory. Especially, the QDs in this device can be charged by electrons using light illumination as the exclusive method. The electron charging process is ascribed to the photoexcitation process in the InP-core and the hot holes induced. The QDs layer demonstrates an electron storage density of ≈5.0 × 1011 cm-2 and a hole storage density of ≈6.4 × 1011 cm-2 . Resultingly, the output device shows a fast response speed to gate voltage (10 µs), large memory window (42 V), good retention (>4.0 × 104 s), and reliable endurance. This work suggests that the core/shell quantum dot as a kind of charge storage medium is of great promise for optoelectronic memories.
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Affiliation(s)
- Hao hu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Guohao Wen
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Jiamin Wen
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Long‐Biao Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Meng Zhao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy ApplicationSchool of Physical Science and TechnologySuzhou University of Science and TechnologySuzhou215009China
| | - Honglei Wu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Zhenhua Sun
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
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81
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Xu C, Mao J, Guo X, Yan S, Chen Y, Lo TW, Chen C, Lei D, Luo X, Hao J, Zheng C, Zhu Y. Two-dimensional ferroelasticity in van der Waals β'-In 2Se 3. Nat Commun 2021; 12:3665. [PMID: 34135331 PMCID: PMC8209144 DOI: 10.1038/s41467-021-23882-7] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/12/2021] [Accepted: 05/24/2021] [Indexed: 11/09/2022] Open
Abstract
Two-dimensional (2D) materials exhibit remarkable mechanical properties, enabling their applications as flexible and stretchable ultrathin devices. As the origin of several extraordinary mechanical behaviors, ferroelasticity has also been predicted theoretically in 2D materials, but so far lacks experimental validation and investigation. Here, we present the experimental demonstration of 2D ferroelasticity in both exfoliated and chemical-vapor-deposited β'-In2Se3 down to few-layer thickness. We identify quantitatively 2D spontaneous strain originating from in-plane antiferroelectric distortion, using both atomic-resolution electron microscopy and in situ X-ray diffraction. The symmetry-equivalent strain orientations give rise to three domain variants separated by 60° and 120° domain walls (DWs). Mechanical switching between these ferroelastic domains is achieved under ≤0.5% external strain, demonstrating the feasibility to tailor the antiferroelectric polar structure as well as DW patterns through mechanical stimuli. The detailed domain switching mechanism through both DW propagation and domain nucleation is unraveled, and the effects of 3D stacking on such 2D ferroelasticity are also discussed. The observed 2D ferroelasticity here should be widely available in 2D materials with anisotropic lattice distortion, including the 1T' transition metal dichalcogenides with Peierls distortion and 2D ferroelectrics such as the SnTe family, rendering tantalizing potential to tune 2D functionalities through strain or DW engineering.
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Affiliation(s)
- Chao Xu
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Jianfeng Mao
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Xuyun Guo
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Shanru Yan
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Yancong Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, China
| | - Tsz Wing Lo
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Changsheng Chen
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Dangyuan Lei
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, China
| | - Xin Luo
- State Key Laboratory of Optoelectronic Materials and Technologies, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, China
| | - Jianhua Hao
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Changxi Zheng
- School of Science, Westlake University, Hangzhou, China.,Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, China
| | - Ye Zhu
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China.
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