Efficient photovoltaic current generation at ferroelectric domain walls

Field enhancement of electronic conductance at ferroelectric domain walls

Ferroelectric domain walls have continued to attract widespread attention due to both the novelty of the phenomena observed and the ability to reliably pattern them in nanoscale dimensions. However, the conductivity mechanisms remain in debate, particularly around nominally uncharged walls. Here, we posit a conduction mechanism relying on field-modification effect from polarization re-orientation and the structure of the reverse-domain nucleus. Through conductive atomic force microscopy measurements on an ultra-thin (001) BiFeO₃ thin film, in combination with phase-field simulations, we show that the field-induced twisted domain nucleus formed at domain walls results in local-field enhancement around the region of the atomic force microscope tip. In conjunction with slight barrier lowering, these two effects are sufficient to explain the observed emission current distribution. These results suggest that different electronic properties at domain walls are not necessary to observe localized enhancement in domain wall currents.

Understanding the conductivity at the nominally uncharged domain walls in ferroelectrics is still far from complete. Here the authors report an enhanced conduction at domain walls in an ultra-thin (001) BiFeO₃ film resulting from the formation of a field-induced meta-stable twisted domain nucleus.

Observation of Exotic Domain Structures in Ferroelectric Nanodot Arrays Fabricated via a Universal Nanopatterning Approach

We report a facile and cost-competitive nanopatterning route, using Ar ion beam etching through a monolayer polystyrene sphere (PS) array placed on a ferroelectric epitaxial thin film, to fabricate ordered ferroelectric nanodot arrays. Using this method, well-ordered BiFeO₃ epitaxial nanodots, with tunable sizes from ∼100 to ∼900 nm in diameter, have been successfully synthesized. Interestingly, a plethora of exotic nanodomain structures, e.g., stripe domains, vortex and antivortex domains, and single domains, are observed in these nanodots. Moreover, this novel technique has been extended to produce Pb(Zr,Ti)O₃ nanodots and multiferroic composite Co/BiFeO₃ nanodots. These observations enable the creation of exotic domain structures and provide a wide range of application potentials for future nanoelectronic devices.

Controllable Photovoltaic Effect of Microarray Derived from Epitaxial Tetragonal BiFeO3 Films

Recently, the ferroelectric photovoltaic (FePV) effect has attracted great interest due to its potential in developing optoelectronic devices such as solar cell and electric-optical sensors. It is important for actual applications to realize a controllable photovoltaic process in ferroelectric-based materials. In this work, we prepared well-ordered microarrays based on epitaxially tetragonal BiFeO₃ (T-BFO) films by the pulsed laser deposition technique. The polarization-dependent photocurrent image was directly observed by a conductive atomic force microscope under ultraviolet illumination. By choosing a suitable buffer electrode layer and controlling the ferroelectric polarization in the T-BFO layer, we realized the manipulation of the photovoltaic process. Moreover, based on the analysis of the band structure, we revealed the mechanism of manipulating the photovoltaic process and attributed it to the competition between two key factors, i.e., the internal electric field caused by energy band alignments at interfaces and the depolarization field induced by the ferroelectric polarization in T-BFO. This work is very meaningful for deeply understanding the photovoltaic process of BiFeO₃-based devices at the microscale and provides us a feasible avenue for developing data storage or logic switching microdevices based on the FePV effect.

Nanoscale Bandgap Tuning across an Inhomogeneous Ferroelectric Interface

We report nanoscale bandgap engineering via a local strain across the inhomogeneous ferroelectric interface, which is controlled by the visible-light-excited probe voltage. Switchable photovoltaic effects and the spectral response of the photocurrent were explored to illustrate the reversible bandgap variation (∼0.3 eV). This local-strain-engineered bandgap has been further revealed by in situ probe-voltage-assisted valence electron energy-loss spectroscopy (EELS). Phase-field simulations and first-principle calculations were also employed for illustration of the large local strain and the bandgap variation in ferroelectric perovskite oxides. This reversible bandgap tuning in complex oxides demonstrates a framework for the understanding of the optically related behaviors (photovoltaic, photoemission, and photocatalyst effects) affected by order parameters such as charge, orbital, and lattice parameters.

Impact of Isovalent and Aliovalent Doping on Mechanical Properties of Mixed Phase BiFeO3

In this study, we report the effect of doping in morphotropic BiFeO₃ (BFO) thin films on mechanical properties, revealing variations in the elasticity across the competing phases and their boundaries. Spectroscopic force-distance (F-D) curves and force mapping images by AFM are used to characterize the structure and elastic properties of three BFO thin-film candidates (pure-BFO, Ca-doped BFO, La-doped BFO). We show that softening behavior is observed in isovalent La-doped BFO, whereas hardening is seen in aliovalent Ca-doped BFO. Furthermore, quantitative F-D measurements are extended to show threshold strengths for phase transitions, revealing their dependence on doping in the system. First-principles simulation methods are also employed to understand the observed mechanical properties in pure and doped BFO thin films and to provide microscopic insight on them. These results provide key insight into doping as an effective control parameter to tune nanomechanical properties and suggest an alternative framework to control coupled ferroic functionalities at the nanoscale.

Mesoscopic Free Path of Nonthermalized Photogenerated Carriers in a Ferroelectric Insulator

We show how finite-size scaling of a bulk photovoltaic effect-generated electric field in epitaxial ferroelectric insulating BaTiO_{3}(001) films and a photo-Hall response involving the bulk photovoltaic current reveal a large room-temperature mean free path of photogenerated nonthermalized electrons. Experimental determination of mesoscopic ballistic optically generated carrier transport opens a new paradigm for hot electron-based solar energy conversion, and for facile control of ballistic transport distinct from existing low-dimensional semiconductor interfaces, surfaces, layers, or other structures.

Enhancement of Local Photovoltaic Current at Ferroelectric Domain Walls in BiFeO3

Domain walls, which are intrinsically two dimensional nano-objects exhibiting nontrivial electronic and magnetic behaviours, have been proven to play a crucial role in photovoltaic properties of ferroelectrics. Despite this recognition, the electronic properties of domain walls under illumination until now have been accessible only to macroscopic studies and their effects upon the conduction of photovoltaic current still remain elusive. The lack of understanding hinders the developing of nanoscale devices based on ferroelectric domain walls. Here, we directly characterize the local photovoltaic and photoconductive properties of 71° domain walls on BiFeO₃ thin films with a nanoscale resolution. Local photovoltaic current, proven to be driven by the bulk photovoltaic effect, has been probed over the whole illuminated surface by using a specially designed photoelectric atomic force microscopy and found to be significantly enhanced at domain walls. Additionally, spatially resolved photoconductive current distribution reveals a higher density of excited carriers at domain walls in comparison with domains. Our measurements demonstrate that domain wall enhanced photovoltaic current originates from its high conduction rather than the internal electric field. This photoconduction facilitated local photovoltaic current is likely to be a universal property of topological defects in ferroelectric semiconductors.

Ferroelectric BiFeO3 as an Oxide Dye in Highly Tunable Mesoporous All-Oxide Photovoltaic Heterojunctions

As potential photovoltaic materials, transition-metal oxides such as BiFeO₃ (BFO) are capable of absorbing a substantial portion of solar light and incorporating ferroic orders into solar cells with enhanced performance. But the photovoltaic application of BFO has been hindered by low energy-conversion efficiency due to poor carrier transport and collection. In this work, a new approach of utilizing BFO as a light-absorbing sensitizer is developed to interface with charge-transporting TiO₂ nanoparticles. This mesoporous all-oxide architecture, similar to that of dye-sensitized solar cells, can effectively facilitate the extraction of photocarriers. Under the standard AM1.5 (100 mW cm^-2 ) irradiation, the optimized cell shows an open-circuit voltage of 0.67 V, which can be enhanced to 1.0 V by tailoring the bias history. A fill factor of 55% is achieved, which is much higher than those in previous reports on BFO-based photovoltaic devices. The results provide here a new viable approach toward developing highly tunable and stable photovoltaic devices based on ferroelectric transition-metal oxides.

Toward Switchable Photovoltaic Effect via Tailoring Mobile Oxygen Vacancies in Perovskite Oxide Films

The defect chemistry of perovskite oxides involves the cause to most of their abundant functional properties, including interface magnetism, charge transport, ionic exchange, and catalytic activity. The possibility to achieve dynamic control over oxygen anion vacancies offers a unique opportunity for the development of appealing switchable devices, which at present are commonly based on ferroelectric materials. Herein, we report the discovery of a switchable photovoltaic effect, that the sign of the open voltage and the short circuit current can be reversed by inverting the polarity of the applied field, upon electrically tailoring the distribution of oxygen vacancies in perovskite oxide films. This phenomenon is demonstrated in lateral photovoltaic devices based on both ferroelectric BiFeO₃ and paraelectric SrTiO₃ films, under a reversed applied field whose magnitude is much smaller than the coercivity value of BiFeO₃. The migration of oxygen vacancies was directly observed by employing an advanced annular bright-field scanning transmission electron microscopy technique with in situ biasing equipment. We conclude that the band bending induced by the motion of oxygen vacancies is the driving force for the reversible switching between two photovoltaic states. The present work can provide an active path for the design of novel switchable photovoltaic devices with a wide range of transition metal oxides in terms of the ionic degrees of freedom.

Electronic and optical properties of graphene nanoribbons in external fields

A review work is done for the electronic and optical properties of graphene nanoribbons in magnetic, electric, composite, and modulated fields. Effects due to the lateral confinement, curvature, stacking, non-uniform subsystems and hybrid structures are taken into account. The special electronic properties, induced by complex competitions between external fields and geometric structures, include many one-dimensional parabolic subbands, standing waves, peculiar edge-localized states, width- and field-dependent energy gaps, magnetic-quantized quasi-Landau levels, curvature-induced oscillating Landau subbands, crossings and anti-crossings of quasi-Landau levels, coexistence and combination of energy spectra in layered structures, and various peak structures in the density of states. There exist diverse absorption spectra and different selection rules, covering edge-dependent selection rules, magneto-optical selection rule, splitting of the Landau absorption peaks, intragroup and intergroup Landau transitions, as well as coexistence of monolayer-like and bilayer-like Landau absorption spectra. Detailed comparisons are made between the theoretical calculations and experimental measurements. The predicted results, the parabolic subbands, edge-localized states, gap opening and modulation, and spatial distribution of Landau subbands, have been identified by various experimental measurements.

Structural and electronic transformation pathways in morphotropic BiFeO3

Phase boundaries in multiferroics, in which (anti-)ferromagnetic, ferroelectric and ferroelastic order parameters coexist, enable manipulation of magnetism and electronic properties by external electric fields through switching of the polarization in the material. It has been shown that the strain-driven morphotropic phase boundaries in a single-phase multiferroic such as BiFeO₃ (BFO) can exhibit distinct electronic conductivity. However, the control of ferroelectric and phase switching and its correlation with phase boundary conductivity in this material has been a significant challenge. Supported by a thermodynamic approach, here we report a concept to precisely control different switching pathways and the associated control of electronic conductivity in mixed phase BFO. This work demonstrates a critical step to control and use non-volatile strain-conductivity coupling at the nanoscale. Beyond this observation, it provides a framework for exploring a route to control multiple order parameters coupled to ferroelastic and ferroelectric order in multiferroic materials.

Photovoltaics with Ferroelectrics: Current Status and Beyond

Ferroelectrics carry a switchable spontaneous electric polarization. This polarization is usually coupled to strain, making ferroelectrics good piezoelectrics. When coupled to magnetism, they become so-called multiferroic systems, a field that has been widely investigated since 2003. While ferroelectrics are birefringent and non-linear optically transparent materials, the coupling of polarization with optical properties has received, since 2009, renewed attention, triggered notably by low-bandgap ferroelectrics suitable for sunlight spectrum absorption and original photovoltaic effects. Consequently, power conversion efficiencies up to 8.1% were recently achieved and values of 19.5% were predicted, making photoferroelectrics promising photovoltaic alternatives. This article aims at providing an up-to-date review on this emerging and rapidly progressing field by highlighting several important issues and parameters, such as the role of domain walls, ways to tune the bandgap, consequences arising from the polarization switchability, and the role of defects and contact electrodes, as well as the downscaling effects. Beyond photovoltaicity, other polarization-related processes are also described, like light-induced deformation (photostriction) or light-assisted chemical reaction (photostriction). It is hoped that this overview will encourage further avenues to be explored and challenged and, as a byproduct, will inspire other research communities in material science, e.g., so-called hybrid halide perovskites.

Photocarrier transport and dynamics in mixed-phase BiFeO3 films

We report a remarkable photoinduced relaxation process and its dependence of thickness and temperature in mixed-phase BiFeO₃ films grown on (001) LaAlO₃ substrates. When the films are illuminated by the light above the bandgap, their resistances are reduced with the increase of temperature. The photoinduced change of resistance reaches to the maximum of about 2.17 × 10^5% at 300 K. It is noted that the relaxation processes of the resistance are significantly different between T-like phase and T-R mixed phase due to structural strain, symmetry breaking and built-in electric field at the phase boundaries. These results provide more insights into intrinsic mechanisms of mixed-phase multiferroic materials and potential applications in all-oxide photoelectric devices.

Bandgap Engineering of Lead-Halide Perovskite-Type Ferroelectrics

Semiconducting ferroelectricity is realized in hybrid perovskite-type compounds (cyclohexylammonium)2 PbBr4-4 x I4 x (x = 0-1). By adjusting the composition x, the bandgap is successfully tuned from previously reported 3.65 eV to as low as 2.74 eV, and the excellent ferroelectricity was kept intact. This finding may contribute to improving the photoelectronic and/or photovoltaic performance of hybrid perovskite-type compounds.

Can ferroelectric polarization explain the high performance of hybrid halide perovskite solar cells?

Ferroelectricity can lead to creation of channels for efficient transport, however it is unlikely to explain the high open-circuit voltage (V_OC), typical of high performance perovskite solar cells.

Driving Spin Excitations by Hydrostatic Pressure in BiFeO(3)

Optical spectroscopy has been combined with computational and theoretical techniques to show how the spin dynamics in the model multiferroic BiFeO(3) responds to the application of hydrostatic pressure and its corresponding series of structural phase transitions from R3c to the Pnma phases. As pressure increases, multiple spin excitations associated with noncollinear cycloidal magnetism collapse into two excitations, which show jump discontinuities at some of the ensuing crystal phase transitions. The effective Hamiltonian approach provides information on the electrical polarization and structural changes of the oxygen octahedra through the successive structural phases. The extracted parameters are then used in a Ginzburg-Landau model to reproduce the evolution with pressure of the spin wave excitations observed at low energy, and we demonstrate that the structural phases and the magnetic anisotropy drive and control the spin excitations.

Enhancement of the anisotropic photocurrent in ferroelectric oxides by strain gradients

The phase separation of multiple competing structural/ferroelectric phases has attracted particular attention owing to its excellent electromechanical properties. Little is known, however, about the strain-gradient-induced electronic phenomena at the interface of competing structural phases. Here, we investigate the polymorphic phase interface of bismuth ferrites using spatially resolved photocurrent measurements, present the observation of a large enhancement of the anisotropic interfacial photocurrent by two orders of magnitude, and discuss the possible mechanism on the basis of the flexoelectric effect. Nanoscale characterizations of the photosensitive area through position-sensitive angle-resolved piezoresponse force microscopy and electron holography techniques, in conjunction with phase field simulation, reveal that regularly ordered dipole-charged domain walls emerge. These findings offer practical implications for complex oxide optoelectronics.

Giant photovoltaic effect of ferroelectric domain walls in perovskite single crystals

The photovoltaic (PV) effect in polar materials offers great potential for light-energy conversion that generates a voltage beyond the bandgap limit of present semiconductor-based solar cells. Ferroelectrics have received renewed attention because of the ability to deliver a high voltage in the presence of ferroelastic domain walls (DWs). In recent years, there has been considerable debate over the impact of the DWs on the PV effects, owing to lack of information on the bulk PV tensor of host ferroelectrics. In this article, we provide the first direct evidence of an unusually large PV response induced by ferroelastic DWs-termed 'DW'-PV effect. The precise estimation of the bulk PV tensor in single crystals of barium titanate enables us to quantify the giant PV effect driven by 90° DWs. We show that the DW-PV effect arises from an effective electric field consisting of a potential step and a local PV component in the 90° DW region. This work offers a starting point for further investigation into the DW-PV effect of alternative systems and opens a reliable route for enhancing the PV properties in ferroelectrics based on the engineering of domain structures in either bulk or thin-film form.

The expanding world of hybrid perovskites: materials properties and emerging applications

Hybrid inorganic–organic perovskites have emerged over the last 5 years as a promising class of materials for optoelectronic applications. Most notably, their solar cells have achieved power conversion efficiencies above 20% in an unprecedented timeframe; however, many fundamental questions still remain about these materials. This Prospective Article reviews the procedures used to deposit hybrid perovskites and describes the resulting crystallographic and morphological structures. It further details the electrical and optical properties of perovskites and then concludes by highlighting a number of potential applications and the materials challenges that must be overcome before they can be realized.

Electrospun bismuth ferrite nanofibers for potential applications in ferroelectric photovoltaic devices

Bismuth ferrite (BFO) nanofibers were synthesized via a sol-gel-based electrospinning process followed by thermal treatment. The influences of processing conditions on the final structure of the samples were investigated. Nanofibers prepared under optimized conditions were found to have a perovskite structure with good quality of crystallization and free of impurity phase. Ferroelectric and piezoelectric responses were obtained from individual nanofiber measured on a piezoelectric force microscope. A prototype photovoltaic device using laterally aligned BFO nanofibers and interdigital electrodes was developed and its performance was examined on a standard photovoltaic system. The BFO nanofibers were found to exhibit an excellent ferroelectric photovoltaic property with the photocurrent several times larger than the literature data obtained on BFO thin films.

p-i-n heterojunctions with BiFeO3 perovskite nanoparticles and p- and n-type oxides: photovoltaic properties

We formed p-i-n heterojunctions based on a thin film of BiFeO3 nanoparticles. The perovskite acting as an intrinsic semiconductor was sandwiched between a p-type and an n-type oxide semiconductor as hole- and electron-collecting layer, respectively, making the heterojunction act as an all-inorganic oxide p-i-n device. We have characterized the perovskite and carrier collecting materials, such as NiO and MoO3 nanoparticles as p-type materials and ZnO nanoparticles as the n-type material, with scanning tunneling spectroscopy; from the spectrum of the density of states, we could locate the band edges to infer the nature of the active semiconductor materials. The energy level diagram of p-i-n heterojunctions showed that type-II band alignment formed at the p-i and i-n interfaces, favoring carrier separation at both of them. We have compared the photovoltaic properties of the perovskite in p-i-n heterojunctions and also in p-i and i-n junctions. From current-voltage characteristics and impedance spectroscopy, we have observed that two depletion regions were formed at the p-i and i-n interfaces of a p-i-n heterojunction. The two depletion regions operative at p-i-n heterojunctions have yielded better photovoltaic properties as compared to devices having one depletion region in the p-i or the i-n junction. The results evidenced photovoltaic devices based on all-inorganic oxide, nontoxic, and perovskite materials.

BiFeO3 epitaxial thin films and devices: past, present and future

The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

Ultrathin ferroelectric films are of increasing interests these years, owing to the need of device miniaturization and their wide spectrum of appealing properties. Recent advanced deposition methods and characterization techniques have largely broadened the scope of experimental researches of ultrathin ferroelectric films, pushing intensive property study and promising device applications. This review aims to cover state-of-the-art experimental works of ultrathin ferroelectric films, with a comprehensive survey of growth methods, characterization techniques, important phenomena and properties, as well as device applications. The strongest emphasis is on those aspects intimately related to the unique phenomena and physics of ultrathin ferroelectric films. Prospects and challenges of this field also have been highlighted.

Parameters Affecting I-V Hysteresis of CH3NH3PbI3 Perovskite Solar Cells: Effects of Perovskite Crystal Size and Mesoporous TiO2 Layer

Current-voltage (I-V) characteristics of CH3NH3PbI3 perovskite solar cells are studied using a time-dependent current response with stepwise sweeping of the bias voltage. Compared with the crystalline Si solar cell showing time-independent current at a given bias voltage, the perovskite solar cells exhibit time-dependent current response. The current increases with time and becomes steady at forward scan from short-circuit to open-circuit, whereas it is decayed and saturated with time at reverse scan from open-circuit to short-circuit. Time-dependent current response eventually leads to I-V hysteresis depending on the scan direction and the scan rate. Crystal size of CH3NH3PbI3 and the mesoporous TiO2 (mp-TiO2) film are found to influence I-V hysteresis, where the I-V hysteresis is alleviated as crystal size increases and in the presence of mp-TiO2. The capacitance observed at low frequency (0.1 to 1 Hz), associated with dipole polarization, tends to diminish as size of perovskite and mp-TiO2 layer thickness increases, which suggests that the origin of hysteresis correlates to the capacitive characteristic of CH3NH3PbI3 and the degree of hysteresis depends strongly on perovskite crystal size and mesoporous TiO2 layer.

Enhanced performance with bismuth ferrite perovskite in ZnO nanorod solid state solar cells

This paper reports for the first time the use of perovskite bismuth ferrite (BiFeO3 or BFO) on ZnO-based solid state solar cells using only chemical solution methods for materials synthesis. As ZnO has poor chemical stability in acidic and corrosive environments, a buffer method using aminosilane ((3-aminopropyltriethoxysilane or H2N(CH2)3Si(OC2H5)3)) coating was used to provide a protective coating on the ZnO nanorods. The aminosilane layer was removed after BFO coating. The solid state solar cells, sensitized by N719, used CuSCN as the hole conductor and were tested under 100 mW cm(-2), AM 1.5G simulated sunlight. The photovoltaic performance showed current density improvement from 0.64 mA cm(-2) to 1.4 mA cm(-2) and efficiencies from 0.1% to 0.38% when comparing between ZnO and ZnO/BFO solar cells. The observed ca. 400% improved performance is shown to result from BFO's role as an electron blocking layer.

Doping BiFeO3: approaches and enhanced functionality

BiFeO(3) is one of the most studied multiferroic materials. Both its magnetic and ferroelectric properties can be influenced by doping. A large body of work on the doped material has been presented in the past couple of years. In this paper we provide a perspective on general doping concepts and their impact on the material's functionality.

Photovoltaic enhancement due to surface-plasmon assisted visible-light absorption at the inartificial surface of lead zirconate-titanate film

PZT film of 300 nm thickness was deposited on tin indium oxide (ITO) coated quartz by a sol-gel method. Four metal electrodes, such as Pt, Au, Cu and Ag, were used as top electrodes deposited on the same PZT film by sputtering at room temperature. In ITO-PZT-Ag and ITO-PZT-Au structures, the visible light (400-700 nm) can be absorbed partially by a PZT film, and the maximum efficiency of photoelectric conversion of the ITO-PZT-Ag structure was enhanced to 0.42% (100 mW cm(-2), AM 1.5G), which is about 15 times higher than that of the ITO-PZT-Pt structure. Numerical simulations show that the natural random roughness of polycrystalline-PZT-metal interface can offer a possibility of coupling between the incident photons and SPs at the metal surface. The coincidence between the calculated SP properties and the measured EQE spectra reveals the SP origin of the photovoltaic enhancement in these ITO-PZT-metal structures, and the improved photocurrent output is caused by the enhanced optical absorption in the PZT region near the metal surface, rather than by the direct charge-transfer process between two materials.

Control of ferroelectricity and magnetism in multi-ferroic BiFeO3 by epitaxial strain

Recently, strain engineering has been shown to be a powerful and flexible means of tailoring the properties of ABO3 perovskite thin films. The effect of epitaxial strain on the structure of the perovskite unit cell can induce a host of interesting effects, these arising from either polar cation shifts or rotation of the oxygen octahedra, or both. In the multi-ferroic perovskite bismuth ferrite (BiFeO3-BFO), both degrees of freedom exist, and thus a complex behaviour may be expected as one plays with epitaxial strain. In this paper, we review our results on the role of strain on the ferroic transition temperatures and ferroic order parameters. We find that, while the Néel temperature is almost unchanged by strain, the ferroelectric Curie temperature strongly decreases as strain increases in both the tensile and compressive ranges. Also unexpected is the very weak influence of strain on the ferroelectric polarization value. Using effective Hamiltonian calculations, we show that these peculiar behaviours arise from the competition between antiferrodistortive and polar instabilities. Finally, we present results on the magnetic order: while the cycloidal spin modulation present in the bulk survives in weakly strained films, it is destroyed at large strain and replaced by pseudo-collinear antiferromagnetic ordering. We discuss the origin of this effect and give perspectives for devices based on strain-engineered BiFeO3.

Role of domain walls in the abnormal photovoltaic effect in BiFeO3

Recently, the anomalous photovoltaic (PV) effect in BiFeO₃ (BFO) thin films, which resulted in open circuit voltages (V_oc) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we prove that the bulk photovoltaic (BPV) effect, which has been studied in the past for many non-centrosymmetric materials, is at the origin of the anomalous PV effect in BFO films. Moreover, we show that irrespective of the measurement geometry, V_oc as high as 50 V can be achieved by controlling the conductivity of domain walls (DW). We also show that photoconductivity of the DW is markedly higher than in the bulk of BFO.

The origin of the abnormal photovoltaic effect in bismuth ferrite thin films, which causes voltages larger than the band gap, is poorly understood. Bhatnagar et al. show that this effect can be attributed to a bulk photovoltaic effect and that it can be enhanced by controlling domain wall conductivity.

Parity nonconservation and bulk photovoltaic effect in a crystal without symmetry center

The theory and the experimental characteristics of the bulk photovoltaic effect in ferroelectric and piezoelectric crystals are considered. This new effect is caused by violation of the principle of detailed balancing for nonthermalized carriers. In conclusion, the new effect of ferroelectric photovoltages on domain walls is considered, as is its potential use in solar energy generation.

Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin films

The diode and photovoltaic effects of BiFeO3 and Bi0.9Sr0.1FeO(3-δ) polycrystalline thin films were investigated by poling the films with increased magnitude and alternating direction. It was found that both electromigration of oxygen vacancies and polarization flipping are able to induce switchable diode and photovoltaic effects. For the Bi0.9Sr0.1FeO(3-δ) thin films with high oxygen vacancy concentration, reversibly switchable diode and photovoltaic effects can be observed due to the electromigration of oxygen vacancies under an electric field much lower than its coercive field. However, for the pure BiFeO3 thin films with lower oxygen vacancy concentration, the reversibly switchable diode and photovoltaic effect is hard to detect until the occurrence of polarization flipping. The switchable diode and photovoltaic effects can be explained well using the concepts of Schottky-like barrier-to-Ohmic contacts resulting from the combination of oxygen vacancies and polarization. The sign of photocurrent could be independent of the direction of polarization when the modulation of the energy band induced by oxygen vacancies is large enough to offset that induced by polarization. The photovoltaic effect induced by the electromigration of oxygen vacancies is unstable due to the diffusion of oxygen vacancies or the recombination of oxygen vacancies with hopping electrons. Our work provides deep insights into the nature of diode and photovoltaic effects in ferroelectric films, and will facilitate the advanced design of switchable devices combining spintronic, electronic, and optical functionalities.

New high T(c) multiferroics KBiFe₂O₅ with narrow band gap and promising photovoltaic effect

Intrinsic polarization of ferroelectrics (FE) helps separate photon-generated charge carriers thus enhances photovoltaic effects. However, traditional FE with transition-metal cations (M) of d⁰ electron in MO₆ network typically has a band gap (E_g) exceeding 3.0 eV. Although a smaller E_g (2.6 eV) can be obtained in multiferroic BiFeO₃, the value is still too high for optimal solar energy applications. Computational “materials genome” searches have predicted several exotic MO₆ FE with E_g < 2.0 eV, all thus far unconfirmed because of synthesis difficulties. Here we report a new FE compound with MO₄ tetrahedral network, KBiFe₂O₅, which features narrow E_g (1.6 eV), high Curie temperature (T_c ~ 780 K) and robust magnetic and photoelectric activities. The high photovoltage (8.8 V) and photocurrent density (15 μA/cm²) were obtained, which is comparable to the reported BiFeO₃. This finding may open a new avenue to discovering and designing optimal FE compounds for solar energy applications.

Electronic origin of ultrafast photoinduced strain in BiFeO3

Above-band-gap optical excitation produces interdependent structural and electronic responses in a multiferroic BiFeO(3) thin film. Time-resolved synchrotron x-ray diffraction shows that photoexcitation can induce a large out-of-plane strain, with magnitudes on the order of half of one percent following pulsed-laser excitation. The strain relaxes with the same nanosecond time dependence as the interband relaxation of excited charge carriers. The magnitude of the strain and its temporal correlation with excited carriers indicate that an electronic mechanism, rather than thermal effects, is responsible for the lattice expansion. The observed strain is consistent with a piezoelectric distortion resulting from partial screening of the depolarization field by charge carriers, an effect linked to the electronic transport of excited carriers. The nonthermal generation of strain via optical pulses promises to extend the manipulation of ferroelectricity in oxide multiferroics to subnanosecond time scales.

All-Oxide Photovoltaics

Recently, a new field in photovoltaics (PV) has emerged, focusing on solar cells that are entirely based on metal oxide semiconductors. The all-oxide PV approach is very attractive due to the chemical stability, nontoxicity, and abundance of many metal oxides that potentially allow manufacturing under ambient conditions. Already today, metal oxides (MOs) are widely used as components in PV cells such as transparent conducting front electrodes or electron-transport layers, while only very few MOs have been used as light absorbers. In this Perspective, we review recent developments of all-oxide PV systems, which until today were mostly based on Cu2O as an absorber. Furthermore, ferroelectric BiFeO3-based PV systems are discussed, which have recently attracted considerable attention. The performance of all-oxide PV cells is discussed in terms of general PV principles, and directions for progress are proposed, pointing toward the development of novel metal oxide semiconductors using combinatorial methods.

First-principles calculation of the bulk photovoltaic effect in bismuth ferrite

We compute the bulk photovoltaic effect (BPVE) in BiFeO(3) using first-principles shift current theory, finding good agreement with experimental results. Furthermore, we reconcile apparently contradictory observations: by examining the contributions of all photovoltaic response tensor components and accounting for the geometry and ferroelectric domain structure of the experimental system, we explain the apparent lack of BPVE response in striped polydomain samples that is at odds with the significant response observed in monodomain samples. We reveal that the domain-wall-driven response in striped polydomain samples is partially mitigated by the BPVE, suggesting that enhanced efficiency could be obtained in materials with cooperative rather than antagonistic interaction between the two mechanisms.

First principles calculation of the shift current photovoltaic effect in ferroelectrics

We calculate the bulk photovoltaic response of the ferroelectrics BaTiO(3) and PbTiO(3) from first principles by applying the "shift current" theory to the electronic structure from density functional theory. The first principles results for BaTiO(3) reproduce experimental photocurrent direction and magnitude as a function of light frequency, as well as the dependence of current on light polarization, demonstrating that shift current is the dominant mechanism of the bulk photovoltaic effect in BaTiO(3). Additionally, we analyze the relationship between response and material properties in detail. Photocurrent does not depend simply or strongly on the magnitude of material polarization, as has been previously assumed; instead, electronic states with delocalized, covalent bonding that is highly asymmetric along the current direction are required for strong shift current enhancements. The complexity of the response dependence on both external and material parameters suggests applications not only in solar energy conversion, but in photocatalysis and sensor and switch type devices as well.

Revisiting properties of ferroelectric and multiferroic thin films under tensile strain from first principles

First-principles calculations are performed to revisit properties of (001) epitaxial BiFeO(3) (BFO) and PbTiO(3) thin films under tensile strain. While these two films possess different ground states when experiencing no misfit strain, they both exhibit the same, previously unknown phase for tensile strains above ≃5% at T = 0 K. This novel state is of orthorhombic Pmc2(1) symmetry and is macroscopically characterized by a large in-plane polarization coexisting with oxygen octahedra tilting in-phase about the out-of-plane direction. On a microscopic point of view, this Pmc2(1) state exhibits short atomic bonds and zigzag cation displacement patterns, unlike conventional ferroelectric phases and typical domains. Such unusual inhomogeneous patterns originate from the coexistence of polar and antiferroelectric distortions having the same magnitude and lead BFO films to be the first known material for which orbital ordering coexists with a large polarization. Furthermore, this Pmc2(1) state is also found in other perovskite films under tensile strain, which emphasizes its generality.

Local mapping of generation and recombination lifetime in BiFeO3 single crystals by scanning probe photoinduced transient spectroscopy

Carrier lifetime in photoelectric processes is the average time an excited carrier is free before recombining or trapping. Lifetime is directly related to defects and it is a key parameter in analyzing photovoltaic effects in semiconductors. We show here a scanning probe method combined with photoinduced current spectroscopy that allows mapping with nanoscale resolution of the generation and recombination lifetimes. Using this method we have analyzed the mechanism of the abnormal photovoltaic effect in multiferroic bismuth ferrite, BiFeO(3). We found that generation and recombination lifetimes in BiFeO(3) are large due to complex generation and recombination processes that involve shallow energy levels in the band gap. The domain walls do not play a major role in the photovoltaic mechanism.

Dynamics of photogenerated surface charge on BiFeO3 films

We report on the spatial and temporal evolution of photoinduced charge generation and carrier separation in heteroepitaxial BiFeO(3) thin films deposited on Nb:SrTiO(3) as measured in ambient at room temperature with Kelvin probe and piezoresponse force microscopy. Contributions from the self-poled and ferroelectric polarization charge are identified from the time evolution of the correlated surface potential and ferroelectric polarization in films as grown and following poling, and at different stages and intensities of optical illumination. Variations in the surface potential with bias voltage, switching history, and illumination intensity indicate how both bulk ferroelectric photovoltaic and the domain wall offset potential mechanisms contribute to the photogenerated charge.