Progress in piezotronics and piezo-phototronics

Piezo-Phototronic Enhanced UV Sensing Based on a Nanowire Photodetector Array

A large array of Schottky UV photodetectors (PDs) based on vertical aligned ZnO nanowires is achieved. By introducing the piezo-phototronic effect, the performance of the PD array is enhanced up to seven times in photoreponsivity, six times in sensitivity, and 2.8 times in detection limit. The UV PD array may have applications in optoelectronic systems, adaptive optical computing, and communication.

Visible-Light Modulation on Lattice Dielectric Responses of a Piezo-Phototronic Soft Material

In situ synchrotron X-ray diffraction is used to investigate a three-way piezo-phototronic soft material. This new system is composed of a semi-crystalline poly(vinylidene fluoride-co-trifluoroethylene) piezoelectric polymer and titanium oxide nanoparticles. Under light illumination, photon-induced piezoelectric responses are nearly two times higher at both the lattice-structure and the macroscopic level than under conditions without light illumination. A mechanistic model is proposed.

Ionic screening effect on low-frequency drain current fluctuations in liquid-gated nanowire FETs

The ionic screening effect plays an important role in determining the fundamental surface properties within liquid-semiconductor interfaces. In this study, we investigated the characteristics of low-frequency drain current noise in liquid-gated nanowire (NW) field effect transistors (FETs) to obtain physical insight into the effect of ionic screening on low-frequency current fluctuation. When the NW FET was operated close to the gate voltage corresponding to the maximum transconductance, the magnitude of the low-frequency noise for the NW exposed to a low-ionic-strength buffer (0.001 M) was approximately 70% greater than that when exposed to a high-ionic-strength buffer (0.1 M). We propose a noise model, considering the charge coupling efficiency associated with the screening competition between the electrolyte buffer and the NW, to describe the ionic screening effect on the low-frequency drain current noise in liquid-gated NW FET systems. This report not only provides a physical understanding of the ionic screening effect behind the low-frequency current noise in liquid-gated FETs but also offers useful information for developing the technology of NW FETs with liquid-gated architectures for application in bioelectronics, nanosensors, and hybrid nanoelectronics.

Internal Electron Tunneling Enabled Ultrasensitive Position/Force Peapod Sensors

The electron quantum tunneling effect guarantees the ultrahigh spatial resolution of the scanning tunneling microscope (STM), but there have been no other significant applications of this effect after the invention of STM. Here we report the implementation of electron-tunneling-based high sensitivity transducers using a peapod B4C nanowire, where discrete Ni6Si2B nanorods are embedded in the nanowire in a peapod form. The deformation of the nanowire provides a higher order scaling effect between conductivity and deformation strain, thus allowing the potentials of position and force sensing at the picoscale.

Recent Progress in Electronic Skin

The skin is the largest organ of the human body and can sense pressure, temperature, and other complex environmental stimuli or conditions. The mimicry of human skin's sensory ability via electronics is a topic of innovative research that could find broad applications in robotics, artificial intelligence, and human-machine interfaces, all of which promote the development of electronic skin (e-skin). To imitate tactile sensing via e-skins, flexible and stretchable pressure sensor arrays are constructed based on different transduction mechanisms and structural designs. These arrays can map pressure with high resolution and rapid response beyond that of human perception. Multi-modal force sensing, temperature, and humidity detection, as well as self-healing abilities are also exploited for multi-functional e-skins. Other recent progress in this field includes the integration with high-density flexible circuits for signal processing, the combination with wireless technology for convenient sensing and energy/data transfer, and the development of self-powered e-skins. Future opportunities lie in the fabrication of highly intelligent e-skins that can sense and respond to variations in the external environment. The rapidly increasing innovations in this area will be important to the scientific community and to the future of human life.

First realization of the piezoelectronic stress-based transduction device

We present the first realization of a monolithically integrated piezoelectronic transistor (PET), a new transduction-based computer switch which could potentially operate conventional computer logic at 1/50 the power requirements of current Si-based transistors (Chen 2014 Proc. IEEE ICICDT pp 1-4; Mamaluy et al 2014 Proc. IWCE pp 1-2). In PET operation, an input gate voltage expands a piezoelectric element (PE), transducing the input into a pressure pulse which compresses a piezoresistive element (PR). The PR resistance goes down, transducing the signal back to voltage and turning the switch 'on'. This transduction physics, in principle, allows fast, low-voltage operation. In this work, we address the processing challenges of integrating chemically incompatible PR and PE materials together within a surrounding cage against which the PR can be compressed. This proof-of-concept demonstration of a fully integrated, stand-alone PET device is a key step in the development path toward a fast, low-power very large scale integration technology.

Piezotronic Effect in Polarity-Controlled GaN Nanowires

Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction.

Magnetic-Induced Luminescence from Flexible Composite Laminates by Coupling Magnetic Field to Piezophotonic Effect

Magnetic-induced luminescence (MIL) is realized via a strain-mediated coupling strategy. MIL composite laminates composed of magnetic actuator and phosphor phases are developed. The MIL performance is tested under low magnetic fields at room temperature. The results provide a novel type of promising luminescent and magnetic material for developing some new concept devices.

Performance Enhancement of Electronic and Energy Devices via Block Copolymer Self-Assembly

The use of self-assembled block copolymers (BCPs) for the fabrication of electronic and energy devices has received a tremendous amount of attention as a non-traditional approach to patterning integrated circuit elements at nanometer dimensions and densities inaccessible to traditional lithography techniques. The exquisite control over the dimensional features of the self-assembled nanostructures (i.e., shape, size, and periodicity) is one of the most attractive properties of BCP self-assembly. Harmonic spatial arrangement of the self-assembled nanoelements at desired positions on the chip may offer a new strategy for the fabrication of electronic and energy devices. Several recent reports show the great promise in using BCP self-assembly for practical applications of electronic and energy devices, leading to substantial enhancements of the device performance. Recent progress is summarized here, with regard to the performance enhancements of non-volatile memory, electrical sensor, and energy devices enabled by directed BCP self-assembly.

Thermal-electric model for piezoelectric ZnO nanowires

The behavior of ZnO nanowires under uniaxial loading is characterized by means of a numerical model that accounts for all coupled mechanical, electrical, and thermal effects. The paper shows that thermal effects in the nanowires may greatly impact the predicted performance of piezoelectric and piezotronic nanodevices. The pyroelectric effect introduces new equivalent volumic charge in the body of the nanowire and surface charges at the boundaries, where Kapitza resistances are located, that act together with the piezoelectric charges to improve the predicted performance. It is shown that the proposed model is able to reproduce several effects experimentally observed by other research groups, and is a promising tool for the design of ultra-high efficient nanodevices.

Tribotronic Logic Circuits and Basic Operations

A tribotronic logic device is fabricated to convert external mechanical stimuli into logic level signals, and tribotronic logic circuits such as NOT, AND, OR, NAND, NOR, XOR, and XNOR gates are demonstrated for performing mechanical-electrical coupled tribotronic logic operations, which realize the direct interaction between the external environment and the current silicon integrated circuits.

Enhanced ferroelectric-nanocrystal-based hybrid photocatalysis by ultrasonic-wave-generated piezophototronic effect

An electric field built inside a crystal was proposed to enhance photoinduced carrier separation for improving photocatalytic property of semiconductor photocatalysts. However, a static built-in electric field can easily be saturated by the free carriers due to electrostatic screening, and the enhancement of photocatalysis, thus, is halted. To overcome this problem, here, we propose sonophotocatalysis based on a new hybrid photocatalyst, which combines ferroelectric nanocrystals (BaTiO3) and semiconductor nanoparticles (Ag2O) to form an Ag2O-BaTiO3 hybrid photocatalyst. Under periodic ultrasonic excitation, a spontaneous polarization potential of BaTiO3 nanocrystals in responding to ultrasonic wave can act as alternating built-in electric field to separate photoinduced carriers incessantly, which can significantly enhance the photocatalytic activity and cyclic performance of the Ag2O-BaTiO3 hybrid structure. The piezoelectric effect combined with photoelectric conversion realizes an ultrasonic-wave-driven piezophototronic process in the hybrid photocatalyst, which is the fundamental of sonophotocatalysis.

Piezotronically modified double Schottky barriers in ZnO varistors

Double Schottky barriers in ZnO are modified piezotronically by the application of mechanical stresses. New effects such as the enhancement of the potential barrier height and the increase or decrease of the natural barrier asymmetry are presented. Also, an extended model for the piezotronic modification of double Schottky barriers is given.

High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging

A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin, biomechanical imaging/analysis, or personalized signatures. Here, we present a dynamic pressure sensor array based on pressure/strain tuned photoluminescence imaging without the need for electricity. Each sensor is a nanopillar that consists of InGaN/GaN multiple quantum wells. Its photoluminescence intensity can be modulated dramatically and linearly by small strain (0-0.15%) owing to the piezo-phototronic effect. The sensor array has a high pixel density of 6350 dpi and exceptional small standard deviation of photoluminescence. High-quality tactile/pressure sensing distribution can be real-time recorded by parallel photoluminescence imaging without any cross-talk. The sensor array can be inexpensively fabricated over large areas by semiconductor product lines. The proposed dynamic all-optical pressure imaging with excellent resolution, high sensitivity, good uniformity, and ultrafast response time offers a suitable way for smart sensing, micro/nano-opto-electromechanical systems.

Piezotronic-effect enhanced drug metabolism and sensing on a single ZnO nanowire surface with the presence of human cytochrome P450

Cytochromes P450 (CYPs) enzymes are involved in catalyzing the metabolism of various endogenous and exogenous compounds. A rapid analysis of drug metabolism reactions by CYPs is required because they can metabolize 95% of current drugs in drug development and effective therapies. Here, we describe a study of piezotronic-effect enhanced drug metabolism and sensing by utilizing a single ZnO nanowire (ZnO NW) device. Owing to the unique hydrophobic feature of a ZnO NW that provides a desirable "microenvironment" for the immobilization of biomolecules, our device can effectively stimulate the tolbutamide metabolism by decorating a ZnO NW with cytochrome P4502C9/CYPs reductase (CYP2C9/CPR) microsomes. By applying an external compressive strain to the ZnO nanowire, the piezotronic effect, which plays a primary role in tuning the transport behavior of a ZnO NW utilizing the created piezoelectric polarization charges at the local interface, can effectively enhance the performance of the device. A theoretical model is proposed using an energy band diagram to explain the experimental data. This study provides a potential approach to study drug metabolism and trace drug detection based on the piezotronic effect.

Three-dimensional Aerographite-GaN hybrid networks: single step fabrication of porous and mechanically flexible materials for multifunctional applications

Three dimensional (3D) elastic hybrid networks built from interconnected nano- and microstructure building units, in the form of semiconducting-carbonaceous materials, are potential candidates for advanced technological applications. However, fabrication of these 3D hybrid networks by simple and versatile methods is a challenging task due to the involvement of complex and multiple synthesis processes. In this paper, we demonstrate the growth of Aerographite-GaN 3D hybrid networks using ultralight and extremely porous carbon based Aerographite material as templates by a single step hydride vapor phase epitaxy process. The GaN nano- and microstructures grow on the surface of Aerographite tubes and follow the network architecture of the Aerographite template without agglomeration. The synthesized 3D networks are integrated with the properties from both, i.e., nanoscale GaN structures and Aerographite in the form of flexible and semiconducting composites which could be exploited as next generation materials for electronic, photonic, and sensors applications.

Piezo-phototronic UV/visible photosensing with optical-fiber-nanowire hybridized structures

An optical-fiber-nanowire hybridized UV-visible photodetector (PD) is reported. The PD is designed to allow direct integration in optical communication systems without requiring the use of couplers via fiber-welding technology. The PD works in two modes: axial and off-axial illumination mode. By using the piezo-phototronic effect, the performance of the PD is enhanced/optimized by up to 718% in sensitivity and 2067% in photoresponsivity.

Highly stable piezo-immunoglobulin-biosensing of a SiO2/ZnO nanogenerator as a self-powered/active biosensor arising from the field effect influenced piezoelectric screening effect

Highly stable piezo-immunoglobulin-biosensing has been realized from a SiO2/ZnO nanowire (NW) nanogenerator (NG) as a self-powered/active biosensor. The piezoelectric output generated by the SiO2/ZnO NW NG can act not only as a power source for driving the device, but also as a sensing signal for detecting immunoglobulin G (IgG). The stability of the device is very high, and the relative standard deviation (RSD) ranges from 1.20% to 4.20%. The limit of detection (LOD) of IgG on the device can reach 5.7 ng mL(-1). The response of the device is in a linear relationship with IgG concentration. The biosensing performance of SiO2/ZnO NWs is much higher than that of bare ZnO NWs. A SiO2 layer uniformly coated on the surface of the ZnO NW acts as the gate insulation layer, which increases mechanical robustness and protects it from the electrical leakages and short circuits. The IgG biomolecules modified on the surface of the SiO2/ZnO NW act as a gate potential, and the field effect can influence the surface electron density of ZnO NWs, which varies the screening effect of free-carriers on the piezoelectric output. The present results demonstrate a feasible approach for a highly stable self-powered/active biosensor.

Piezoelectric effect of 3-D ZnO nanotetrapods

ZnO nanotetrapods could be designed as multiterminal strain sensors for enhancing sensitivity and directivity.

Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect

Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

Solution-derived ZnO homojunction nanowire films on wearable substrates for energy conversion and self-powered gesture recognition

Emerging applications in wearable technology, pervasive computing, human-machine interfacing, and implantable biomedical devices demand an appropriate power source that can sustainably operate for extended periods of time with minimal intervention (Wang, Z. L.; et al. Angew. Chem., Int. Ed. 2012, 51, 11700). Self-powered nanosystems, which harvest operating energy from its host (i.e., the human body), may be feasible due to their extremely low power consumption (Tian, B. Z.; et al. Nature 2007, 449, 885. Javey, A.; et al. Nature 2003, 424, 654. Cui, Y.; et al. Science 2001, 291, 851). Here we report materials and designs for wearable-on-skin piezoelectric devices based on ultrathin (2 μm) solution-derived ZnO p-n homojunction films for the first time. The depletion region formed at the p-n homojunction effectively reduces internal screening of strain-induced polarization charges by free carriers in both n-ZnO and Sb-doped p-ZnO, resulting in significantly enhanced piezoelectric output compared to a single layer device. The p-n structure can be further grown on polymeric substrates conformable to a human wrist and used to convert movement of the flexor tendons into distinguishable electrical signals for gesture recognition. The ZnO homojunction piezoelectric devices may have applications in powering nanodevices, bioprobes, and self-powered human-machine interfacing.

Piezoelectric nanoparticle-polymer composite foams

Piezoelectric polymer composite foams are synthesized using different sugar-templating strategies. By incorporating sugar grains directly into polydimethylsiloxane mixtures containing barium titanate nanoparticles and carbon nanotubes, followed by removal of the sugar after polymer curing, highly compliant materials with excellent piezoelectric properties can be fabricated. Porosities and elasticity are tuned by simply adjusting the sugar/polymer mass ratio which gave an upper bound on the porosity of 73% and a lower bound on the elastic coefficient of 32 kPa. The electrical performance of the foams showed a direct relationship between porosity and the piezoelectric outputs, giving piezoelectric coefficient values of ∼112 pC/N and a power output of ∼18 mW/cm3 under a load of 10 N for the highest porosity samples. These novel materials should find exciting use in a variety of applications including energy scavenging platforms, biosensors, and acoustic actuators.

Magnetic-mechanical-electrical-optical coupling effects in GaN-based LED/rare-earth terfenol-D structures

A multi-field coupling structure is designed and investigated, which combines GaN-based optoelectronic devices and Terfenol-D. The abundant coupling effects and multifunctionalities among magnetics, mechanics, electrics, and optics are investigated by a combination of non-magnetic GaN-based piezoelectronic optoelectronic characteristics and the giant magnetomechanical properties of Terfenol-D. A few potential new areas of studies are proposed.

The clash of mechanical and electrical size-effects in ZnO nanowires and a double power law approach to elastic strain engineering of piezoelectric and piezotronic devices

The piezoelectric performance of ultra-strength ZnO nanowires (NWs) depends on the subtle interplay between electrical and mechanical size-effects. "Size-dependent" modeling of compressed NWs illustrates why experimentally observed mechanical stiffening can indeed collide with electrical size-effects when the size shrinks, thereby lowering the actual piezoelectric function from bulk estimates. "Smaller" is not necessarily "better" in nanotechnology.

Real-time monitoring of the solution growth of ZnO nanorods arrays by quartz microbalances and in-situ temperature sensors

Wet-chemistry methods have crucial advantages for the synthesis of nanostructures, including simple, low-cost, large-area, and low-temperature deposition on almost arbitrary substrates. Nevertheless, the rational design of improved wet-chemistry procedures is extremely difficult because, in practice, only post-synthesis characterization is possible. In fact, the only methods for on-line monitoring the growth of nanostructures in liquids are complex, expensive and introduce intricate artifacts. Here we demonstrate that electro-mechanically resonating substrates and in-situ temperature sensors easily enable an accurate real-time investigation of reaction kinetics and, in combination with conventional SEM imaging, greatly facilitate the rational design of optimized synthesis procedures; in particular, such a simple approach provides useful insight for the development of processes where one or more key parameters are dynamically adjusted. As a proof-of-concept, first, we accurately characterize a process for fabricating arrays of ZnO nanorods; afterwards, we design a dynamic-temperature process that, in comparison with the corresponding constant-temperature procedure, is almost-ideally energy efficient and results in ZnO nanorods with improved characteristics in terms of length, aspect ratio, and total deposited nanorods mass. This is a major step towards the rational design of dynamic procedures for the solution growth of nanostructures.

In vivo powering of pacemaker by breathing-driven implanted triboelectric nanogenerator

The first application of an implanted triboelectric nanogenerator (iTENG) that enables harvesting energy from in vivo mechanical movement in breathing to directly drive a pacemaker is reported. The energy harvested by iTENG from animal breathing is stored in a capacitor and successfully drives a pacemaker prototype to regulate the heart rate of a rat. This research shows a feasible approach to scavenge biomechanical energy, and presents a crucial step forward for lifetime-implantable self-powered medical devices.

Contact electrification field-effect transistor

Utilizing the coupled metal oxide semiconductor field-effect transistor and triboelectric nanogenerator, we demonstrate an external force triggered/controlled contact electrification field-effect transistor (CE-FET), in which an electrostatic potential across the gate and source is created by a vertical contact electrification between the gate material and a “foreign” object, and the carrier transport between drain and source can be tuned/controlled by the contact-induced electrostatic potential instead of the traditional gate voltage. With the two contacted frictional layers vertically separated by 80 μm, the drain current is decreased from 13.4 to 1.9 μA in depletion mode and increased from 2.4 to 12.1 μA in enhancement mode at a drain voltage of 5 V. Compared with the piezotronic devices that are controlled by the strain-induced piezoelectric polarization charged at an interface/junction, the CE-FET has greatly expanded the sensing range and choices of materials in conjunction with semiconductors. The CE-FET is likely to have important applications in sensors, human–silicon technology interfacing, MEMS, nanorobotics, and active flexible electronics. Based on the basic principle of the CE-FET, a field of tribotronics is proposed for devices fabricated using the electrostatic potential created by triboelectrification as a “gate” voltage to tune/control charge carrier transport in conventional semiconductor devices. By the three-way coupling among triboelectricity, semiconductor, and photoexcitation, plenty of potentially important research fields are expected to be explored in the near future.

Surface energy-mediated construction of anisotropic semiconductor wires with selective crystallographic polarity

ZnO is a wide band-gap semiconductor with piezoelectric properties suitable for opto-electronics, sensors, and as an electrode material. Controlling the shape and crystallography of any semiconducting nanomaterial is a key step towards extending their use in applications. Whilst anisotropic ZnO wires have been routinely fabricated, precise control over the specific surface facets and tailoring of polar and non-polar growth directions still requires significant refinement. Manipulating the surface energy of crystal facets is a generic approach for the rational design and growth of one-dimensional (1D) building blocks1234. Although the surface energy is one basic factor for governing crystal nucleation and growth of anisotropic 1D structures, structural control based on surface energy minimization has not been yet demonstrated56789. Here, we report an electronic configuration scheme to rationally modulate surface electrostatic energies for crystallographic-selective growth of ZnO wires. The facets and orientations of ZnO wires are transformed between hexagonal and rectangular/diamond cross-sections with polar and non-polar growth directions, exhibiting different optical and piezoelectrical properties. Our novel synthetic route for ZnO wire fabrication provides new opportunities for future opto-electronics, piezoelectronics, and electronics, with new topological properties.

Intensify the application of ZnO-based nanodevices in humid environment: O2/H2 plasma suppressed the spontaneous reaction of amorphous ZnO nanowires

In this work, we have demonstrated that amorphous ZnO nanobranches (a-ZnO NBs) could spontaneously react from the crystalline ZnO NWs (c-ZnO NWs) at specific humid environment. The spontaneous reaction mechanism and result can be analyzed by humidity controlling and optical microscope (OM)/scanning electron microscope (SEM)/Kelvin probe force microscopy (KPFM)/transmission electron microscopy (TEM) system. We can make the c-ZnO NWs spontaneous reaction happen at different humid environments and suppress the a-ZnO NBs spontaneous reaction by oxygen/hydrogen plasma surface passivation. The hydrogen plasma surface treatment also can improve the UV sensing sensitivity more than twofold. This work provides the mechanism and methods of the a-ZnO NBs spontaneous growth and offers the passivation treatment for strengthening and enhancing ZnO-based nanodevice application in humid environment and UV light detection, respectively.

High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented β-Ga₂O₃ nanobelts

Fabrication of a high-temperature deep-ultraviolet photodetector working in the solar-blind spectrum range (190-280 nm) is a challenge due to the degradation in the dark current and photoresponse properties. Herein, β-Ga2O3 multi-layered nanobelts with (l00) facet-oriented were synthesized, and were demonstrated for the first time to possess excellent mechanical, electrical properties and stability at a high temperature inside a TEM studies. As-fabricated DUV solar-blind photodetectors using (l00) facet-oriented β-Ga2O3 multi-layered nanobelts demonstrated enhanced photodetective performances, that is, high sensitivity, high signal-to-noise ratio, high spectral selectivity, high speed, and high stability, importantly, at a temperature as high as 433 K, which are comparable to other reported semiconducting nanomaterial photodetectors. In particular, the characteristics of the photoresponsivity of the β-Ga2O3 nanobelt devices include a high photoexcited current (>21 nA), an ultralow dark current (below the detection limit of 10(-14) A), a fast time response (<0.3 s), a high R(λ) (≈851 A/W), and a high EQE (~4.2 × 10(3)). The present fabricated facet-oriented β-Ga2O3 multi-layered nanobelt based devices will find practical applications in photodetectors or optical switches for high-temperature environment.

Quantum strain sensor with a topological insulator HgTe quantum dot

We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using eight-band k · p Luttinger and Bir-Pikus Hamiltonians, with surface states identified with chirality of Luttinger spinors and obtained through extensive numerical diagonalization of the Hamiltonian.

Exciton drift in semiconductors under uniform strain gradients: application to bent ZnO microwires

Optimizing the electronic structures and carrier dynamics in semiconductors at atomic scale is an essential issue for innovative device applications. Besides the traditional chemical doping and the use of homo/heterostructures, elastic strain has been proposed as a promising possibility. Here, we report on the direct observation of the dynamics of exciton transport in a ZnO microwire under pure elastic bending deformation, by using cathodoluminescence with high temporal, spatial, and energy resolutions. We demonstrate that excitons can be effectively drifted by the strain gradient in inhomogeneous strain fields. Our observations are well reproduced by a drift-diffusion model taking into account the strain gradient and allow us to deduce an exciton mobility of 1400 ± 100 cm(2)/(eV s) in the ZnO wire. These results propose a way to tune the exciton dynamics in semiconductors and imply the possible role of strain gradient in optoelectronic and sensing nano/microdevices.

Pt/ZnO nanoarray nanogenerator as self-powered active gas sensor with linear ethanol sensing at room temperature

A self-powered gas sensor that can actively detect ethanol at room temperature has been realized from a Pt/ZnO nanoarray nanogenerator. Pt nanoparticles are uniformly distributed on the whole surface of ZnO nanowires. The piezoelectric output of Pt/ZnO nanoarrays can act not only as a power source, but also as a response signal to ethanol at room temperature. Upon exposure to dry air and 1500 ppm ethanol at room temperature, the piezoelectric output of the device under the same compressive strain is 0.672 and 0.419 V, respectively. Moreover, a linear dependence of the sensitivity on the ethanol concentration is observed. Such a linear ethanol sensing at room temperature can be attributed to the atmosphere-dependent variety of the screen effect on the piezoelectric output of ZnO nanowires, the catalytic properties of Pt nanoparticles, and the Schottky barriers at Pt/ZnO interfaces. The present results can stimulate research in the direction of designing new material systems for self-powered room-temperature gas sensing.

Electronic and Mechanical Coupling in Elastically Bent ZnO Micro/Nanowires

Elastic engineering strain has been regarded as a low-cost and continuously variable manner for altering the physical and chemical properties of materials, and it becomes even more important at low-dimensionality because at micro/nanoscale, materials/structures can usually bear exceptionally high elastic strains before failure. The elastic strain effects are therefore greatly magnified in micro/nanoscale structures and should be of great potential in the design of novel functional devices. The purpose of this overview is to present a summary of our recently progress in the energy band engineering of elastically bent ZnO micro/nanowires. First, we present the electronic and mechanical coupling effect in bent ZnO nanowires. Second, we summary the bending strain gradient effect on the near-band-edge (NBE) emission photon energy of bent ZnO micro/nanowires. Third, we show that the strain can induce exciton fine-structure splitting and shift in ZnO microwires. Our recent progresses illustrate that the electronic band structure of ZnO micro/nanowires can be dramatically tuned by elastic strain engineering, and point to potential future applications based on the elastic strain engineering of ZnO micro/nanowires.

Synthesis of CdS nanorod arrays and their applications in flexible piezo-driven active H2S sensors

A flexible piezo-driven active H2S sensor has been fabricated from CdS nanorod arrays. By coupling the piezoelectric and gas sensing properties of CdS nanorods, the piezoelectric output generated by CdS nanorod arrays acts not only as a power source, but also as a response signal to H2S. Under externally applied compressive force, the piezoelectric output of CdS nanorod arrays is very sensitive to H2S. Upon exposure to 600 ppm H2S, the piezoelectric output of the device decreased from 0.32 V (in air) to 0.12 V. Such a flexible device can be driven by the tiny mechanical energy in our living environment, such as human finger pinching. Our research can stimulate a research trend on designing new material systems and device structures for high-performance piezo-driven active gas sensors.

Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires

The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.

Piezotronics and piezo-phototronics: fundamentals and applications

Technology advancement that can provide new solutions and enable augmented capabilities to complementary metal–oxide–semiconductor (CMOS)-based technology, such as active and adaptive interaction between machine and human/ambient, is highly desired. Piezotronic nanodevices and integrated systems exhibit potential in achieving these application goals. Utilizing the gating effect of piezopotential over carrier behaviors in piezoelectric semiconductor materials under externally applied deformation, the piezoelectric and semiconducting properties together with optoelectronic excitation processes can be coupled in these materials for the investigation of novel fundamental physics and the implementation of unprecedented applications. Piezopotential is created by the strain-induced ionic polarization in the piezoelectric semiconducting crystal. Piezotronics deal with the devices fabricated using the piezopotential as a ‘gate’ voltage to tune/control charge-carrier transport across the metal–semiconductor contact or the p–n junction. Piezo-phototronics is to use the piezopotential for controlling the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices. This review intends to provide an overview of the rapid progress in the emerging fields of piezotronics and piezo-phototronics. The concepts and results presented in this review show promises for implementing novel nano-electromechanical devices and integrating with micro/nano-electromechanical system technology to achieve augmented functionalities to the state-of-the-art CMOS technology that may find applications in the human–machine interfacing, active flexible/stretchable electronics, sensing, energy harvesting, biomedical diagnosis/therapy, and prosthetics.

Giant piezoresistive on/off ratios in rare-earth chalcogenide thin films enabling nanomechanical switching

Sophisticated microelectromechanical systems for device and sensor applications have flourished in the past decade. These devices exploit piezoelectric, capacitive, and piezoresistive effects, and coupling between them. However, high-performance piezoresistivity (as defined by on/off ratio) has primarily been observed in macroscopic single crystals. In this Letter, we show for the first time that rare-earth monochalcogenides in thin film form can modulate a current by more than 1000 times due to a pressure-induced insulator to metal transition. Furthermore, films as thin as 8 nm show a piezoresistive response. The combination of high performance and scalability make these promising candidates for nanoscale applications, such as the recently proposed piezoelectronic transistor (PET). The PET would mechanically couple a piezoelectric thin film with a piezoresistive switching layer, potentially scaling to higher speeds and lower powers than today's complementary metal-oxide-semiconductor technology.

Strain-induced large exciton energy shifts in buckled CdS nanowires

Strain engineering can be utilized to tune the fundamental properties of semiconductor materials for applications in advanced electronic and photonic devices. Recently, the effects of large strain on the properties of nanostructures are being intensely investigated to further expand our insights into the physics and applications of such materials. In this Letter, we present results on controllable buckled cadmium-sulfide (CdS) optical nanowires (NWs), which show extremely large energy bandgap tuning by >250 meV with applied strains within the elastic deformation limit. Polarization and spatially resolved optical measurements reveal characteristics related to both compressive and tensile regimes, while microreflectance spectroscopy clearly demonstrates the effect of strain on the different types of excitons in CdS. Our results may enable strained NWs-based optoelectronic devices with tunable optical responses.

GaN nanobelt-based strain-gated piezotronic logic devices and computation

Using the piezoelectric polarization charges created at the metal-GaN nanobelt (NB) interface under strain to modulate transport of local charge carriers across the Schottky barrier, the piezotronic effect is utilized to convert mechanical stimuli applied on the wurtzite-structured GaN NB into electronic controlling signals, based on which the GaN NB strain-gated transistors (SGTs) have been fabricated. By further assembling and integrating GaN NB SGTs, universal logic devices such as NOT, AND, OR, NAND, NOR, and XOR gates have been demonstrated for performing mechanical-electrical coupled piezotronic logic operations. Moreover, basic piezotronic computation such as one-bit binary addition over the input mechanical strains with corresponding computation results in an electrical domain by half-adder has been implemented. The strain-gated piezotronic logic devices may find applications in human-machine interfacing, active flexible/stretchable electronics, MEMS, biomedical diagnosis/therapy, and prosthetics.

Enhanced performance of flexible ZnO nanowire based room-temperature oxygen sensors by piezotronic effect

A flexible oxygen sensor based on individual ZnO nanowires is demonstrated with high sensitivity at room temperature and the influence of the piezotronic effect on the performance of this oxygen sensor is investigated. By applying a tensile strain, the already very high sensitivity due to the Schottky contact and pre-treatment of UV light is even further enhanced.