Two-dimensional gas of massless Dirac fermions in graphene

First-principles study of magnetic properties and electronic structure of 3d transition-metal atom-adsorbed SnSSe monolayers

We investigated the electronic structure and magnetic characteristics of 3d transition metal elements (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn) adsorbed onto monolayer SnSSe by employing first-principles calculations. After the calculation, we found that Sc, Ti, V, Cu, and Zn atoms adsorbed onto monolayer SnSSe do not have magnetic moments, while the rest of the atoms adsorbed onto SnSSe are able to produce magnetic moments, and their magnetic moments in the adsorption systems are in the range of 1.0-3.0 μB, in which the magnetic distance of Mn is the largest. The results of MAE calculations indicate that there is a big difference in the MAE of the systems with TM atoms adsorbed to the S-side and the Se-side; for V adsorbed to the S-side on the Sn atoms, the MAE is the largest, which reaches 8.277 meV f.u.-1, showing an in-plane magnetic anisotropy, and for Co adsorbed to the Se-side on the Sn atoms, the MAE is the smallest, which is -0.673 meV f.u.-1, showing a perpendicular magnetic anisotropy. Calculations of binding energies show that all atoms are able to adsorb stably. Our results indicate the potential application of TM-adsorbed SnSSe monolayers in spintronics and magnetic memory devices.

First-principles study of highly sensitive graphene/hexagonal boron nitride heterostructures for application in toxic gas-sensing devices

Graphene-based sensors exhibit high sensitivity, fast response, and good selectivity towards toxic gases but have low mechanical stability. The combination of graphene and two-dimensional hexagonal boron nitride (h-BN) is expected to increase the mechanical stability and enhance the adsorption performance of these gas sensors. Using first-principles calculations, we demonstrate that two-dimensional graphene/h-BN double layers can be used as good substrates for gas sensors with a small lattice mismatch of only 1.78%. Moreover, the presence of a h-BN layer widens the band gap by about 38 meV and considerably increases the work function, thus positively affecting the gas adsorption performance. Although these graphene/h-BN heterostructures do not change the physical adsorption mechanism of these sensors concerning the graphene-based materials, these bilayers significantly enhance the sensitivity of these sensors for detecting CO2, CO, NO, and NO2 toxic gases. Particularly, compared to the pristine graphene-based materials, the gas adsorption energies of graphene/h-BN increased by up to 13.78% for the adsorption of NO, and the shortest distances between the graphene/h-BN substrates and adsorbed gas molecules decreased. We also show that the graphene/h-BN heterostructure is more selective towards NOx gases while more inert towards COx gases, based on the different amounts of charge transferred from the substrate to the adsorbed gas molecules. Using the non-equilibrium Green functions in the context of density functional theory, we quantitatively associated these charge transfers with the reduction of the current passing through these scattering regions. These results demonstrate that graphene/h-BN heterostructures can be exploited as highly sensitive and selective room-temperature gas sensors for detecting toxic gases.

A quantum mechanical approach to the oxidation mechanism of graphene oxide (GO)

Elucidation of the reaction mechanism concerning the oxidation above the face and at the edge of a large, oxidized graphene (GO) cluster, namely C80H22O, by molecular oxygen in the first excited state (1Δg) was achieved with quantum mechanical calculations using the ONIOM two-layer method. Oxidation on the face of the aforementioned cluster leads to the formation of an ozone molecule, whereas oxygen molecule attack at the edge of the oxidized graphene surface either launches an ozonide -a five-membered ring species- formation during its outward approach or an 1,3-dioxetane -a four-membered ring species- production along its inward invasion. A detailed examination of the proposed pathways suggests that the ozonide formation should overcome almost one and a half times an adiabatic energy barrier with respect to the ozone production and is strongly exergonic by up to -50.1 kcal mol-1, supporting the experimental findings that both compounds are critically involved in the explosive deoxygenation of GO. On the other hand, the 1,3-dioxetane alternative pathway is considered even more exergonic, although it requires an overwhelming adiabatic energy barrier of 29.8 kcal mol-1 to accomplish its target.

Biaxial strain modulated electronic structures of layered two-dimensional MoSiGeN4 Rashba systems

The two-dimensional (2D) MA2Z4 family has received extensive attention in manipulating its electronic structure and achieving intriguing physical properties. However, engineering the electronic properties remains a challenge. Herein, based on first-principles calculations, we systematically investigate the effect of biaxial strains on the electronic structure of 2D Rashba MoSiGeN4 (MSGN), and further explore how the interlayer interactions affect the Rashba spin splitting (RSS) in such strained layered MSGN systems. After applying biaxial strains, the band gap decreases monotonically with increasing tensile strains but increases when the compressive strains are applied. An indirect-direct-indirect band gap transition is induced by applying a moderate compressive strain (<5%) in the MSGN systems. Due to the symmetry breaking and moderate spin-orbit coupling (SOC), the monolayer MSGN possesses an isolated RSS near the Fermi level, which could be effectively regulated to the Lifshitz-type spin splitting (LSS) by biaxial strain. For instance, the LSS ← RSS → LSS transformation of the Fermi surface is presented in the monolayer and a more complex and changeable LSS ← RSS → LSS → RSS evolution is observed in bilayer and trilayer MSGN systems as the biaxial strain varies from -8% to 12%, which actually depends on the appearance, variation, and vanish of the Mexican hat band in the absence of SOC under different strains. The contribution of the Mo-dz2 orbital hybridized with the N-pz orbital in the highest valence band plays a dominant role in band evolution under biaxial strains, where the RSS → LSS evolution corresponds to the decreased Mo-dz2 orbital contribution. Our study highlights the biaxial strain controllable RSS, in particular the introduction and even the evolution of LSS near the Fermi surface, which makes the strained MSGN systems promising candidates for future applications in spintronic devices.

Graphyne and graphdiyne nanoribbons: from their structures and properties to potential applications

Graphyne (GY) and graphdiyne (GDY) have properties including unique sp- and sp2-hybrid carbon atomic structures, natural non-zero band gaps, and highly conjugated π electrons. GY and GDY have good application prospects in many fields, including catalysis, solar cells, sensors, and modulators. Under the influence of the boundary effect and quantum size effect, quasi-one-dimensional graphyne nanoribbons (GYNRs) and graphdiyne nanoribbons (GDYNRs) show novel physical properties. The various structures available give GYNRs and GDYNRs greater band structure and electronic properties, and their excellent physical and chemical properties differ from those of two-dimensional GY and GDY. However, the development of GYNRs and GDYNRs still faces problems, including issues with accurate synthesis, advanced structural characterization, the structure-performance correlation of materials, and potential applications. In this review, the structures and physical properties of quasi-one-dimensional GYNRs and GDYNRs are reviewed, their advantages and disadvantages are summarized, and their potential applications are highlighted. This review provides a meaningful basis and research foundation for the design and development of high-performance materials and devices based on GYNRs and GDYNRs in the field of energy.

Influence of ab initio derived site-dependent hopping parameters on electronic transport in graphene nanoribbons

Graphene Nano Ribbons (GNRs) have been studied extensively due to their potential applications in electrical transport, optical devices, etc. The Tight Binding (TB) model is a common method used to theoretically study the properties of GNRs. However, the hopping parameters of two-dimensional graphene (2DG) are often used as the hopping parameters of the TB model of GNRs, which may lead to inaccuracies in the prediction of GNRs. In this work, we calculated the site-dependent hopping parameters from density functional theory and construction of Wannier orbitals for use in a realistic TB model. It has been found that due to the edge effect, the hopping parameters of edge C atoms are markedly different from the bulk part, which is prominently observed in narrow GNRs. Compared to graphene, the change of hopping parameter of edge C atoms of zigzag GNRs (ZGNRs) and armchair GNRs (AGNRs) is as high as 0.11 and 0.08 eV, respectively. Moreover, we investigated the impact of the calculated site-dependent (SD) hopping parameters on the electronic transport properties of GNRs in the absence and presence of the perpendicular electric field and dilute charged impurities using the Green function approach, Landauer-Büttiker formalism and self-consistent Born approximation. We find an electron-hole asymmetry in the electronic structure and transport properties of ZGNRs with SD hopping parameters. Furthermore, AGNRs with SD hopping energies show a band gap regardless of their width, while AGNRs with 2DG hopping parameters exhibit metallic or semiconductor phases depending on their width. In addition, electric field-induced 4-ZGNR with SD hopping parameters undergoes a metallic to n-doped semiconducting phase transition whereas for 4-ZGNR with 2DG hopping parameters and 8-AGNRs with 2DG or SD hopping parameters, the application of an electric field opens the band gap in both conduction and valence bands simultaneously. Our findings provide evidence for the electron-hole symmetry breaking in ZGNR with SD hopping parameters and make ZGNRs a suitable candidate in valleytronic devices.

Machine Learning-Assisted Computational Screening of Adhesive Molecules Derived from Dihydroxyphenyl Alanine

Marine mussels adhere to virtually any surface via 3,4-dihydroxyphenyl-L-alanines (L-DOPA), an amino acid largely contained in their foot proteins. The biofriendly, water-repellent, and strong adhesion of L-DOPA are unparalleled by any synthetic adhesive. Inspired by this, we computationally designed diverse derivatives of DOPA and studied their potential as adhesives or coating materials. We used first-principles calculations to investigate the adsorption of the DOPA derivatives on graphite. The presence of an electron-withdrawing group, such as nitrogen dioxide, strengthens the adsorption by increasing the π-π interaction between DOPA and graphite. To quantify the distribution of electron charge and to gain insights into the charge distribution at interfaces, we performed Bader charge analysis and examined charge density difference plots. We developed a quantitative structure-property relationship (QSPR) model using an artificial neural network (ANN) to predict the adsorption energy. Using the three-dimensional and quantum mechanical electrostatic potential of a molecule as a descriptor, the present quantum NN model shows promising performance as a predictive QSPR model.

Gas Sensing Properties of Pd-Decorated GeSe Monolayer toward Formaldehyde and Benzene Molecules: A First-Principles Study

In this study, the gas sensing properties of formaldehyde (HCHO) and benzene (C6H6) adsorbed on two-dimensional (2D) pristine GeSe and Pd-decorated GeSe (Pd-GeSe) monolayers are studied by using first-principles calculations. The adsorption energies, electronic properties, optical properties, sensitivity, and recovery time of the gas adsorption systems have been thoroughly investigated. It is found that the adsorption of C6H6 on two substrate surfaces and the adsorption of HCHO on pristine GeSe are examples of physical adsorption. However, after HCHO adsorption on the Pd-GeSe monolayer, the adsorption system exhibits an increased adsorption energy of -1.21 eV, which is more favorable compared with the other adsorption systems studied. Moreover, the electron localization function and charge transfer from Pd-GeSe to HCHO are significantly enhanced, indicating distinct chemical adsorption behavior. Furthermore, it demonstrates a larger band gap change rate of 18.8% and a significant enhancement of optical absorption upon the adsorption of HCHO on the Pd-GeSe monolayer. Additionally, the appropriate sensitivity and moderate recovery time for the adsorption of HCHO on the Pd-GeSe surface indicate that the Pd-GeSe monolayer possesses an outstanding sensing capability for HCHO gas.

Carbon Kagome nanotubes-quasi-one-dimensional nanostructures with flat bands

In recent years, a number of bulk materials and heterostructures have been explored due their connections with exotic materials phenomena emanating from flat band physics and strong electronic correlation. The possibility of realizing such fascinating material properties in simple realistic nanostructures is particularly exciting, especially as the investigation of exotic states of electronic matter in wire-like geometries is relatively unexplored in the literature. Motivated by these considerations, we introduce in this work carbon Kagome nanotubes (CKNTs)-a new allotrope of carbon formed by rolling up Kagome graphene, and investigate this material using specialized first principles calculations. We identify two principal varieties of CKNTs-armchair and zigzag, and find both varieties to be stable at room temperature, based on ab initio molecular dynamics simulations. CKNTs are metallic and feature dispersionless states (i.e., flat bands) near the Fermi level throughout their Brillouin zone, along with an associated singular peak in the electronic density of states. We calculate the mechanical and electronic response of CKNTs to torsional and axial strains, and show that CKNTs appear to be more mechanically compliant than conventional carbon nanotubes (CNTs). Additionally, we find that the electronic properties of CKNTs undergo significant electronic transitions-with emergent partial flat bands and tilted Dirac points-when twisted. We develop a relatively simple tight-binding model that can explain many of these electronic features. We also discuss possible routes for the synthesis of CKNTs. Overall, CKNTs appear to be unique and striking examples of realistic elemental quasi-one-dimensional materials that may display fascinating material properties due to strong electronic correlation. Distorted CKNTs may provide an interesting nanomaterial platform where flat band physics and chirality induced anomalous transport effects may be studied together.

Stepwise reduction of graphene oxide and studies on defect-controlled physical properties

Graphene oxide (GO) is a monolayer of oxidized graphene which is a convenient and potential candidate in a wide range of fields of applications like electronics, photonics, optoelectronics, energy storage, catalysis, chemical sensors, and many others. GO is often composed of various oxygen-containing groups such as hydroxyl, carboxyl, and epoxy. One appealing method for achieving graphene-like behavior with sp2 hybridized carbon is the reduction of GO i.e. formation of reduced graphene oxide (RGO). A stepwise reduction GO to form a family of RGO, containing various quantities of oxygen-related defects was carried out. Herein, the defects related chemical and physical properties of GO and the RGO family were studied and reported in an effort to understand how the properties of RGO vary with the reduction rate. Although there are several reports on various features and applications of GO and RGO but a systematic investigation of the variation of the physical and chemical properties in RGO with the varying quantities of oxygeneous defects is imperative for the engineered physical properties in achieving the desired field of applications. We have attempted to look at the role of sp2 and sp3 carbon fractions, which are present in RGO-based systems, and how they affect the electrical, optoelectronic, and adsorption characteristics.

High Energy Density Supercapacitors: An Overview of Efficient Electrode Materials, Electrolytes, Design, and Fabrication

Supercapacitors (SCs) are potentially trustworthy energy storage devices, therefore getting huge attention from researchers. However, due to limited capacitance and low energy density, there is still scope for improvement. The race to develop novel methods for enhancing their electrochemical characteristics is still going strong, where the goal of improving their energy density to match that of batteries by increasing their specific capacitance and raising their working voltage while maintaining high power capability and cutting the cost of production. In this light, this paper offers a succinct summary of current developments and fresh insights into the construction of SCs with high energy density which might help new researchers in the field of supercapacitor research. From electrolytes, electrodes, and device modification perspectives, novel applicable methodologies were emphasized and explored. When compared to conventional SCs, the special combination of electrode material/composites and electrolytes along with their fabrication design considerably enhances the electrochemical performance and energy density of the SCs. Emphasis is placed on the dynamic and mechanical variables connected to SCs' energy storage process. To point the way toward a positive future for the design of high-energy SCs, the potential and difficulties are finally highlighted. Further, we explore a few important topics for enhancing the energy densities of supercapacitors, as well as some links between major impacting factors. The review also covers the obstacles and prospects in this fascinating subject. This gives a fundamental understanding of supercapacitors as well as a crucial design principle for the next generation of improved supercapacitors being developed for commercial and consumer use.

A Review on Graphene Analytical Sensors for Biomarker-based Detection of Cancer

The engineering of nanoscale materials has broadened the scope of nanotechnology in a restricted functional system. Today, significant priority is given to immediate health diagnosis and monitoring tools for point-of-care testing and patient care. Graphene, as a one-atom carbon compound, has the potential to detect cancer biomarkers and its derivatives. The atom-wide graphene layer specialises in physicochemical characteristics, such as improved electrical and thermal conductivity, optical transparency, and increased chemical and mechanical strength, thus making it the best material for cancer biomarker detection. The outstanding mechanical, electrical, electrochemical, and optical properties of two-dimensional graphene can fulfil the scientific goal of any biosensor development, which is to develop a more compact and portable point-of-care device for quick and early cancer diagnosis. The bio-functionalisation of recognised biomarkers can be improved by oxygenated graphene layers and their composites. The significance of graphene that gleans its missing data for its high expertise to be evaluated, including the variety in surface modification and analytical reports. This review provides critical insights into graphene to inspire research that would address the current and remaining hurdles in cancer diagnosis.

Recent Advances in Phosphorene: Structure, Synthesis, and Properties

Phosphorene is a 2D phosphorus atomic layer arranged in a honeycomb lattice like graphene but with a buckled structure. Since its exfoliation from black phosphorus in 2014, phosphorene has attracted tremendous research interest both in terms of synthesis and fundamental research, as well as in potential applications. Recently, significant attention in phosphorene is motivated not only by research on its fundamental physical properties as a novel 2D semiconductor material, such as tunable bandgap, strong in-plane anisotropy, and high carrier mobility, but also by the study of its wide range of potential applications, such as electronic, optoelectronic, and spintronic devices, energy conversion and storage devices. However, a lot of avenues remain to be explored including the fundamental properties of phosphorene and its device applications. This review recalls the current state of the art of phosphorene and its derivatives, touching upon topics on structure, synthesis, characterization, properties, stability, and applications. The current needs and future opportunities for phosphorene are also discussed.

Facile band gap tuning in graphene-brucite heterojunctions

The zero band gap of pure graphene is a well-known issue that limits some specific applications of graphene in opto- and microelectronics. This led to several research studies in the so-called van der Waals composites (known as heterostructures, or heterojunctions), where two monolayers of different materials are stacked and held together by dispersive interactions. In this paper, we introduced and considered a single layer of brucite Mg(OH)2, an overlooked 2D material that can be easily produced by exfoliation (like graphene from graphite), for the creation of the heterojunction. First principles simulations showed that brucite/graphene composites can modify the electronic properties (position of the Dirac cone with respect to the Fermi level and band gap) according to the crystallographic stacking and the presence of point defects. The present work represents then an important step forward in understanding and finding new ways to design two-dimensional materials with tailored electronic and physical properties.

Excitonic Effects in Energy-Loss Spectra of Freestanding Graphene

In this work, we perform electron energy-loss spectroscopy (EELS) of freestanding graphene with high energy and momentum resolution to disentangle the quasielastic scattering from the excitation gap of Dirac electrons close to the optical limit. We show the importance of many-body effects on electronic excitations at finite transferred momentum by comparing measured EELS to ab initio calculations at increasing levels of theory. Quasi-particle corrections and excitonic effects are addressed within the GW approximation and the Bethe-Salpeter equation, respectively. Both effects are essential in the description of the EEL spectra to obtain a quantitative agreement with experiments, with the position, dispersion, and shape of both the excitation gap and the π plasmon being significantly affected by excitonic effects.

Spin and charge persistent currents in a Kane Meleα-T3quantum ring

We conduct a thorough study of different persistent currents in a spin-orbit coupledα-T3(pseudospin-1) fermionic quantum ring (QR) that smoothly interpolates between graphene (α = 0, pseudospin-1/2) and a dice lattice (α = 1, pseudospin-1) in presence of an external perpendicular magnetic field. In particular, we have considered effects of intrinsic (ISOC) and Rashba spin-orbit couplings (RSOC) that are both inherent to two dimensional quantum structures and yield interesting consequences. The energy levels of the system comprise of the conduction bands, valence bands, and flat bands which show non-monotonic dependencies on the radius,Rof the QR, in the sense that, for smallR, the energy levels vary as1/R, while the variation is linear for largeR. The dispersion spectra corresponding to zero magnetic field are benchmarked with those for finite fields to enumerate the role played by the spin-orbit coupling terms therein. Further, it is noted that the flat bands demonstrate dispersive behavior, and hence is able to contribute to the transport properties only for finite ISOC. Moreover, RSOC yields spin-split bands, thereby contributing to the spin-resolved currents. The charge and the spin-polarized persistent currents are hence computed in presence of these spin-orbit couplings. The persistent currents in both the charge and spin sectors oscillate as a function of the magnetic field with a period equal to the flux quantum, as they should be; although they now depend upon the spin-orbit coupling parameters. Interestingly, the ISOC distorts the current profiles, owing to the distribution of the flat band caused by it, whereas RSOC alone preserves the flat band and hence a perfect periodicity of the current characteristic is maintained. Further, we have explored the role played by the parameterαin our entire analysis to enable studies while interpolating from graphene to a dice lattice.

Negative Differential Interlayer Resistance in WSe2 Multilayers via Conducting Channel Migration with Vertical Double-Side Contacts

The inherent interlayer resistance in two-dimensional (2D) van der Waals (vdW) multilayers is expected to significantly influence the carrier density profile along the thickness, provoking spatial modification and separation of the conducting channel inside the multilayers, in conjunction with the thickness-dependent carrier mobility. However, the effect of the interlayer resistance on the variation in the carrier density profile and its direction along the thickness under different electrostatic bias conditions has been elusive. Here, we reveal the presence of a negative differential interlayer resistance (NDIR) in WSe2 multilayers by considering various contact electrode configurations: (i) bottom contact, (ii) top contact, and (iii) vertical double-side contact (VDC). The contact-structure-dependent shape modification of the transconductance clearly manifests the redistribution of carrier density and indicates the direction of the conducting channel migration along the thickness. Furthermore, the distinct characteristic of the electrically tunable NDIR in 2D WSe2 multilayers is revealed by the observed discrepancy between the top- and bottom-channel resistances determined by four-probe measurements with VDC. Our results provide an optimized device layout and further insights into the distinct carrier transport mechanism in 2D vdW multilayers.

A Review on Carrier Mobilities of Epitaxial Graphene on Silicon Carbide

Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that produces wafer-scale, single-orientation graphene on an insulating substrate. It is often referred to as epigraphene, and has been thought to be suitable for electronics applications. In particular, high-frequency devices for communication technology or large quantum Hall plateau for metrology applications using epigraphene are expected, which require high carrier mobility. However, the carrier mobility of as-grown epigraphene exhibit the relatively low values of about 1000 cm2/Vs. Fortunately, we can hope to improve this situation by controlling the electronic state of epigraphene by modifying the surface and interface structures. In this paper, the mobility of epigraphene and the factors that govern it will be described, followed by a discussion of attempts that have been made to improve mobility in this field. These understandings are of great importance for next-generation high-speed electronics using graphene.

Chemical Patterning on Nanocarbons: Functionality Typewriting

Nanocarbon materials have become extraordinarily compelling for their significant potential in the cutting-edge science and technology. These materials exhibit exceptional physicochemical properties due to their distinctive low-dimensional structures and tailored surface characteristics. An attractive direction at the forefront of this field involves the spatially resolved chemical functionalization of a diverse range of nanocarbons, encompassing carbon nanotubes, graphene, and a myriad of derivative structures. In tandem with the technological leaps in lithography, these endeavors have fostered the creation of a novel class of nanocarbon materials with finely tunable physical and chemical attributes, and programmable multi-functionalities, paving the way for new applications in fields such as nanoelectronics, sensing, photonics, and quantum technologies. Our review examines the swift and dynamic advancements in nanocarbon chemical patterning. Key breakthroughs and future opportunities are highlighted. This review not only provides an in-depth understanding of this fast-paced field but also helps to catalyze the rational design of advanced next-generation nanocarbon-based materials and devices.

Electrochemical Synthesis of Functionalized Graphene/Polyaniline Composite Using Two Electrode Configuration for Supercapacitors

An effective approach for the large-scale fabrication of conducting polyaniline (PANI) using in situ anodic electrochemical polymerization on nickel foam which had been coated in aryl diazonium salt (ADS)-modified graphene (ADS-G). In the present work, ADS-G was used as a high surface-area support material for the electrochemical polymerization of PANI. The electrochemical performances of the ADS-G/PANI composites exhibited better suitability as supercapacitor electrode materials than those of the PANI. The ADS-G/PANI composites achieved a specific capacitance of 528 F g-1, which was higher than that of PANI (266 F g-1) due to excellent electrode-electrolyte interaction and the synergistic effect of electrical conductivity between ADS-G and PANI in the composites. These findings suggest that the ADS-G/PANI composites are a suitable composite for potential supercapacitor applications.

High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect

The quantitative description of electrical and magnetotransport properties of solid-state materials has been a remarkable challenge in materials science over recent decades. Recently, the discovery of a novel class of materials-the topological semimetals-has led to a growing interest in the full understanding of their magnetotransport properties. In this review, the strong interplay among topology, band structure, and carrier mobility in recently discovered high carrier mobility topological semimetals is discussed and their effect on their magnetotransport properties is outlined. Their large magnetoresistance effect, especially in the Hall transverse configuration, and a new version of a three-dimensional quantum Hall effect observed in high-mobility Weyl and Dirac semimetals are reviewed. The possibility of designing novel quantum sensors and devices based on solid-state semimetals is also examined.

Effect of shear strain on the electronic and optical properties of Al-doped stanane

CONTEXT

The quasi-metallic properties of stanene limit its prospects in optoelectronic devices. Based on first-principles calculations, a systematic study is conducted on the tuning effects of surface hydrogenation and Al atom doping on the electronic and optical properties of stanene. Surface hydrogenation serves as an ideal way to open the forbidden band of stanene, and Al atom doping further increases hydrogenated stanene (stanane) band gap to 0.460 eV. Deformation has a minor impact on the stability of the stanane-Al structure, while shear strain can effectively modulate the band gap engineering of the doped system, reducing the band gap value from 0.460 to 0.170 eV. Deformation induces a redshift in the absorption peak and reflectance, also slowing down the rate of decrease in the absorption coefficient, and enhancing the peak value of light reflectance, which is positively correlated with the degree of shear strain. These findings hold promise for expanding the potential application of monolayer stanane in semiconductor devices.

METHODS

All calculations are performed using CASTEP module in Materials Studio based on the density functional theory (DFT). The Perdew-Burke-Ernzerhof (PBE) generalized gradient approximation (GGA) is employed to describe the exchange-correlation energy (Perdew et al., Phys Rev Lett 77(18), 1996). We construct models for both stanene and stanane. The original unit cell of stanene has two Sn atoms, while stanane consists of two Sn atoms and two H atoms, and expand them to a 3 × 3 × 1 supercell with a vacuum layer of 20 Å in height to prevent interlayer coupling. After convergence testing, the plane-wave cutoff energy is set to 450 eV, and the energy convergence threshold is set to 1 × 10-5 eV. The maximum residual stress for each atom is set to 0.01 eV/Å. Brillouin zone sampling is performed using a 6 × 6 × 1 k-point mesh based on the Monkhorst-Pack method (Monkhorst and Pack, Phys Rev B 13(12), 1976). The k-point accuracy of the density of states and optical properties is 9 × 9 × 1. All calculations are performed using the more advanced OTFG ultrasoft pseudopotential, and structural relaxations are performed using supercells to ensure that the model is fully relaxed. We use the HSE06 functional to calculate the energy band structures of stanane-Al deformed to 0%, 4%, and 8%, resulting in band gap values of 1.465 eV, 1.368 eV, and 1.016 eV, respectively. These values are significantly higher than those obtained using the PBE functional (0.460 eV, 0.397 eV, and 0.170 eV). However, the shapes and trends of the band structures obtained from both PBE and HSE06 calculations are similar. Additionally, the calculation time needed by HSE06 is greatly longer than PBE, which exceeds the capabilities of our computer hardware, and cannot support all subsequent calculations. To investigate the influence of deformations on the variation of band gap values and to conserve computational resources, the subsequent calculations in this study use the PBE functional.

Tunable electronic band structure and magnetic anisotropy in two-dimensional Dirac half-metal MnBr3 by external stimulus: strain, magnetization direction, and interlayer coupling

Advancing technology and growing interdisciplinary fields create the need for new materials that simultaneously possess several significant physics qualities to meet human demands. Dirac half-metals with massless fermions hold great promise in spintronic devices and optoelectronic devices associated with nontrivial band topologies. In this work, we predict that a MnBr3 monolayer will be an intrinsic Dirac half-metal based on first-principles calculations. The lattice dynamics and thermodynamic stabilities were demonstrated by calculating the phonon spectra and performing molecular dynamics simulations. One property of a MnBr3 monolayer is that facile magnetization of its in-plane can be accomplished. A change in the magnetization direction significantly modifies the electronic band structure. When considering the spin-orbit coupling effect, the Dirac cone around the Fermi level in the spin-up channel opens a gap of 35 meV, which becomes a topological nontrivial insulator with a Chern number of -1. The Chern number sign and the chiral edge current can be tuned by changing the magnetization direction. The electronic band structure and magnetic anisotropy energy can be further modulated by applying biaxial and uniaxial strain, as well as introducing interlayer coupling in the bilayer. The unique performance of MnBr3 will broaden the utilization of two-dimensional magnetism in widespread application.

Tunable Electronic Properties, Carrier Mobility, and Contact Characteristics in Type-II BSe/Sc2CF2 Heterostructures toward Next-Generation Optoelectronic Devices

Conducting heterostructures have emerged as a promising strategy to enhance physical properties and unlock the potential application of such materials. Herein, we conduct and investigate the electronic and transport properties of the BSe/Sc2CF2 heterostructure using first-principles calculations. The BSe/Sc2CF2 heterostructure is structurally and thermodynamically stable, indicating that it can be feasible for further experiments. The BSe/Sc2CF2 heterostructure exhibits a semiconducting behavior with an indirect band gap and possesses type-II band alignment. This unique alignment promotes efficient charge separation, making it highly promising for device applications, including solar cells and photodetectors. Furthermore, type-II band alignment in the BSe/Sc2CF2 heterostructure leads to a reduced band gap compared to the individual BSe and Sc2CF2 monolayers, leading to enhanced charge carrier mobility and light absorption. Additionally, the generation of the BSe/Sc2CF2 heterostructure enhances the transport properties of the BSe and Sc2CF2 monolayers. The electric fields and strains can modify the electronic properties, thus expanding the potential application possibilities. Both the electric fields and strains can tune the band gap and lead to the type-II to type-I conversion in the BSe/Sc2CF2 heterostructure. These findings shed light on the versatile nature of the BSe/Sc2CF2 heterostructure and its potential for advanced nanoelectronic and optoelectronic devices.

Recent Advances in Black Phosphorous-Based Photocatalysts for Degradation of Emerging Contaminants

The recalcitrant nature of emerging contaminants (ECs) in aquatic environments necessitates the development of effective strategies for their remediation, given the considerable impacts they pose on both human health and the delicate balance of the ecosystem. Semiconductor-based photocatalytic technology is recognized for its dual benefits in effectively addressing both ECs and energy-related challenges simultaneously. Among the plethora of photocatalysts, black phosphorus (BP) stands as a promising nonmetallic candidate, offering a host of advantages including its tunable direct band gap, broad-spectrum light absorption capabilities, and exceptional charge mobility. Nevertheless, pristine BP frequently underperforms, primarily due to issues related to its limited ambient stability and the rapid recombination of photogenerated electron-hole pairs. To overcome these challenges, substantial research efforts have been devoted to the creation of BP-based photocatalysts in recent years. However, there is a noticeable absence of reviews regarding the advancement of BP-based materials for the degradation of ECs in aqueous solutions. Therefore, to fill this gap, a comprehensive review is undertaken. In this review, we first present an in-depth examination of the fabrication processes for bulk BP and BP nanosheets (BPNS). The review conducts a thorough analysis and comparison of the merits and limitations inherent in each method, thereby delineating the most auspicious avenues for future research. Then, in line with the pathways followed by photogenerated electron-hole pairs at the interface, BP-based photocatalysts are systematically categorized into heterojunctions (Type I, Type II, Z-scheme, and S-scheme) and hybrids, and their photocatalytic performances against various ECs and the corresponding degradation mechanisms are comprehensively summarized. Finally, this review presents personal insights into the prospective avenues for advancing the field of BP-based photocatalysts for ECs remediation.

Imaging quantum oscillations and millitesla pseudomagnetic fields in graphene

The exceptional control of the electronic energy bands in atomically thin quantum materials has led to the discovery of several emergent phenomena1. However, at present there is no versatile method for mapping the local band structure in advanced two-dimensional materials devices in which the active layer is commonly embedded in the insulating layers and metallic gates. Using a scanning superconducting quantum interference device, here we image the de Haas-van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which shows several highly tunable bands2-4. By resolving thermodynamic quantum oscillations spanning more than 100 Landau levels in low magnetic fields, we reconstruct the band structure and its evolution with the displacement field with excellent precision and nanoscale spatial resolution. Moreover, by developing Landau-level interferometry, we show shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially induced large strain, which leads to pseudomagnetic fields of hundreds of tesla5-7, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by 1 millidegree, two orders of magnitude lower than the typical angle disorder in twisted bilayer graphene8-11. This ability to resolve the local band structure and strain at the nanoscale level enables the characterization and use of tunable band engineering in practical van der Waals devices.

Osseointegration, antimicrobial capacity and cytotoxicity of implant materials coated with graphene compounds: A systematic review

The use of graphecs excellent mechanical properties. However, it is necessary to evaluate the biological effects of this material. This systematic review aimed to observe and understand through studies the current state of the art regarding osseointegration, antimicrobial capacity, and the cytotoxicity of graphene coating applied to the surface of dental implant materials. Searches in PubMed, Embase, Science Direct, Web of Science, and Google Scholar databases were conducted between June and July 2021 and updated in May 2022 using the keywords: graphene, graphene oxide, dental implants, zirconium, titanium, peek, aluminum, disilicate, methyl-methacrylate, cytotoxicity, osseointegration, and bone regeneration. The criteria included in vivo and in vitro studies that evaluated antimicrobial capacity and/or osseointegration and/or cytotoxicity of dental implant materials coated with graphene compounds. The risk of bias for in vitro studies was assessed by the JBI tool, and for in vivo studies, Syrcle's risk of bias tool for animal studies was used. The database search resulted in 176 articles. Of the 18 articles selected for full reading, 16 remained in this systematic review. The use of graphene compounds as coatings on the surface of implant materials is promising because it promotes osseointegration and has antimicrobial capacity. However, further studies are needed to ensure its cytotoxic potential.

Electronic, optoelectronic, and thermoelectric properties of single molecular devices of 2D fullerenes with zigzag graphene nanoribbons as electrodes

Zigzag graphene nanoribbons (GNRs) were selected as electrodes, and the electron transport properties, optical properties, and thermoelectric properties of four fullerene cluster-based molecular devices were studied. By applying different voltages on them, their I-V curves exhibited the multiple negative differential resistance (NDR) effect and the platform effect, which are described in more detail using their density of states (DOS) and projected density of states (PDOS). The results of rotating two types of (C60)4 molecules verify that both the NDR and the platform effects are essential characteristics of them. Furthermore, an examination is conducted on the photocurrent of the devices at the point of maximum light absorption, revealing that α-(C60)4 connected by a [2+2] ring addition bond in the transport direction exhibits superior optical properties and works better as a photoelectric device than β-(C60)4 connected via a C-C single bond in the transport direction. Finally, the thermoelectric current of the devices was studied. Our results contribute to the understanding and the potential application of single devices based on fullerene clusters in the area of molecular electronics.

The metal atomic substitution induced half-metallic properties, metallic properties and semiconducting properties in X-N4 nanoribbons

Armchair X-N4 nanoribbons (X-AN4NRs) and zigzag X-N4 nanoribbons (X-ZN4NRs) were calculated using first-principles calculations. Ferromagnets (FM) were found to be the most stable among the initial magnetic structures. Furthermore, nanoribbons were found to be thermodynamically stable through molecular dynamics simulations. It can be found that when the temperature and total energy of X-AN4NRs and X-ZN4NRs change with time, they have a small oscillation range, which confirms the dynamic stability of X-AN4NRs and X-ZN4NRs under realistic experimental conditions. Subsequently, the magnetic moment analysis of the X-AN4NRs and X-ZN4NRs revealed that the magnetic moment of the X-AN4NRs is significantly smaller than that of X-ZN4NRs. The band structure and density of states (DOS) of the X-AN4NRs and X-ZN4NRs were also computed, which indicate different properties for different transition metal nanoribbons. The results suggest that different edge structures and transition metals can influence the electronic structure of the nanoribbons. Moreover, based on the band structure and DOS, it was found that Mn-AN4NRs and Fe-ZN4NRs exhibit half-metallic properties. They can generate 100% polarized currents at the Fermi level, providing valuable information for developing spintronic devices. Our study has a positive value for regulating the properties of the nanoribbons by metal atom substitution.

Enhanced copper anticorrosion from Janus-doped bilayer graphene

The atomic-thick anticorrosion coating for copper (Cu) electrodes is essential for the miniaturisation in the semiconductor industry. Graphene has long been expected to be the ultimate anticorrosion material, however, its real anticorrosion performance is still under great controversy. Specifically, strong electronic couplings can limit the interfacial diffusion of corrosive molecules, whereas they can also promote the surficial galvanic corrosion. Here, we report the enhanced anticorrosion for Cu simply via a bilayer graphene coating, which provides protection for more than 5 years at room temperature and 1000 h at 200 °C. Such excellent anticorrosion is attributed to a nontrivial Janus-doping effect in bilayer graphene, where the heavily doped bottom layer forms a strong interaction with Cu to limit the interfacial diffusion, while the nearly charge neutral top layer behaves inertly to alleviate the galvanic corrosion. Our study will likely expand the application scenarios of Cu under various extreme operating conditions.

Recent Progress in Two-Dimensional Material Exfoliation Technology and Enlightenment for Geological Sciences

Mechanical exfoliation technology is vital for the development of two-dimensional (2D) materials. This technology has also facilitated the verification of the performance of electronic and optical devices made from 2D materials. In this Perspective, we provide an overview of exfoliation techniques and highlight key physical properties. Additionally, we explored the chemical instability of certain 2D materials and proposed practical solutions to enhance their stability. Furthermore, we discuss the advantages of suspended 2D materials, which demonstrate improved compatibility and properties compared to nonsuspended materials. A particularly intriguing aspect of this Perspective is the exploration of the similarities between the Earth's crust and 2D materials, offering insights into the formation mechanisms of geological phenomena. In this context, 2D materials may serve as simulators for studying geological processes. We hope that this Perspective stimulates further research into exfoliation technology and the physical/chemical properties of 2D materials while providing new inspiration for earth science investigations.

New two-dimensional flat band materials: B3C11O6 and B3C15O6

Recently, there has been growing interest in the field of flat-band physics due to its attractive properties and wide range of practical applications. In this study, we introduce two novel two-dimensional monolayers, namely B3C11O6 and B3C15O6, which exhibit a flat band near the Fermi level. These monolayers have been found to be energetically favorable, dynamically stable, and thermodynamically stable based on formation energies, phonon spectra, and molecular dynamics simulations. The nearly flat band (NFB) in B3C11O6 arises from the extended kagome sublattice of carbon atoms. Due to the strong interaction between carbon atoms beyond their nearest neighbors, the bandwidth of the initial flat band is extended to approximately 0.5 eV. Nevertheless, there is still a prominent peak in the density of states near the Fermi level. On the other hand, the NFB in B3C15O6 originates from the localized states of the carbon five-ring structure, which forms a distorted kagome lattice. The presence and characteristics of the NFB strongly depend on the interactions between next-nearest neighbors. Interestingly, the partially occupied NFB in B3C11O6 leads to spin splitting, resulting in a transformation of the system into a ferromagnetic metal. Our research not only presents two types of lattices capable of hosting flat bands or NFBs, but also provides two monolayers that can be employed to investigate various intriguing quantum phases.

Magnetic topological materials in two-dimensional: theory, material realization and application prospects

Two-dimensional (2D) magnetism and nontrivial band topology are both areas of research that are currently receiving significant attention in the study of 2D materials. Recently, a novel class of materials has emerged, known as 2D magnetic topological materials, which elegantly combine 2D magnetism and nontrivial topology. This field has garnered increasing interest, especially due to the emergence of several novel magnetic topological states that have been generalized into the 2D scale. These states include antiferromagnetic topological insulators/semimetals, second-order topological insulators, and topological half-metals. Despite the rapid advancements in this emerging research field in recent years, there have been few comprehensive summaries of the state-of-the-art progress. Therefore, this review aims to provide a thorough analysis of current progress on 2D magnetic topological materials. We cover various 2D magnetic topological insulators, a range of 2D magnetic topological semimetals, and the novel 2D topological half-metals, systematically analyzing the basic topological theory, the course of development, the material realization, and potential applications. Finally, we discuss the challenges and prospects for 2D magnetic topological materials, highlighting the potential for future breakthroughs in this exciting field.

Optimizing thermoelectric performance of carbon-doped h-BN monolayers through tuning carrier concentrations and magnetic field

The thermoelectric properties of carbon-doped monolayer hexagonal boron nitride (h-BN) are studied using a tight-binding model employing Green function approach and the Kubo formalism. Accurate tight-binding parameters are obtained to achieve excellent fitting with Density Functional Theory results for doped h-BN structures with impurity type and concentration. The influence of carbon doping on the electronic properties, electrical conductivity, and heat capacity of h-BN is studied, especially under an applied magnetic field. Electronic properties are significantly altered by doping type, concentration, and magnetic field due to subband splitting, merging of adjacent subbands, and band gap reduction. These modifications influence the number, location, and magnitude of DOS peaks, generating extra peaks inside the band gap region. Heat capacity displays pronounced dependence on both magnetic field and impurity concentration, exhibiting higher intensity at lower dopant levels. Electrical conductivity is increased by double carbon doping compared to single doping, but is reduced at high magnetic fields because of high carrier scattering. The electronic figure of merit ZT increases with lower impurity concentration and is higher for CB versus CN doping at a given field strength. The power factor can be improved by increasing magnetic field and decreasing doping concentration. In summary, controlling doping and magnetic field demonstrates the ability to effectively engineer the thermoelectric properties of monolayer h-BN.

Density functional theory studies on graphene/h-boron nitride hybrid nanosheets for supercapacitor electrode applications

Pristine graphene (C32), hexagonal boron nitride (h-BN), and graphene/h-BN hybrid nanosheets were examined using density functional theory calculations in order to find their suitability as an electrode material for supercapacitor applications. The stability of the structure, charge density, electronic properties, and quantum capacitance of pristine graphene and graphene/h-BN hybrid nanosheets were studied. The structural optimization results reveal that all the nanosheets are stable with zero transverse displacement of atoms along the z-direction. Further, replacing the C-C pair with B-N altered the average bond length and angle, thereby maintaining structural stability. The interaction between graphene and h-BN is higher for C16B8N8 compared to other hybrid nanosheets because of the delocalized distribution of the electron density cloud. The doping of the B-N pair into the graphene nanosheet shifts the Fermi level into either the valence band or the conduction band based on the concentration of the B-N pair. Meanwhile, the effective mass is increased and is relatively high for the hybrid nanosheets with a localized state. The pristine B16N16 nanosheet exhibits a quantum capacitance of 31.539 μF cm-2, while among the hybrid nanosheets, the C4B14N14 nanosheet exhibits a maximum quantum capacitance of 22.518 μF cm-2, and from the outcomes, they are suitable as an electrode for asymmetric supercapacitors.

Graphene-like emerging 2D materials: recent progress, challenges and future outlook

Owing to the unique physical and chemical properties of 2D materials and the great success of graphene in various applications, the scientific community has been influenced to explore a new class of graphene-like 2D materials for next-generation technological applications. Consequently, many alternative layered and non-layered 2D materials, including h-BN, TMDs, and MXenes, have been synthesized recently for applications related to the 4th industrial revolution. In this review, recent progress in state-of-the-art research on 2D materials, including their synthesis routes, characterization and application-oriented properties, has been highlighted. The evolving applications of 2D materials in the areas of electronics, optoelectronics, spintronic devices, sensors, high-performance and transparent electrodes, energy conversion and storage, electromagnetic interference shielding, hydrogen evolution reaction (HER), oxygen evolution reaction (OER), and nanocomposites are discussed. In particular, the state-of-the-art applications, challenges, and outlook of every class of 2D material are also presented as concluding remarks to guide this fast-progressing class of 2D materials beyond graphene for scientific research into next-generation materials.

Dirac semimetallic Janus Ni-trihalide monolayer with strain-tunable magnetic anisotropy and electronic properties

Two-dimensional (2D) ferromagnetic (FM) semiconductors have been paid much attention due to the potential applications in spintronics. Here, the electronic and magnetic properties of 2D Janus Ni-trihalide monolayer Ni2X3Y3 (X, Y = I, Br, Cl; X ≠ Y) are investigated by first-principle calculations. The properties of Ni2X3Y3 (X, Y = I, Br, Cl; X ≠ Y) monolayers are compared by selecting the NiCl3 monolayer as the reference material. Ni2X3Y3 monolayers have two distinct magnetic ground states of ferromagnetic (FM) and antiferromagnetic (AFM). In the Ni2X3Y3 monolayer, two different orbital splits were observed, one semiconductor state and the other semimetal state. The semimetal state of Ni2X3Y3 can be tuned to semiconductor or metallic state when biaxial strain is applied. The magnetic anisotropy energy (MAE) of the Ni2X3Y3 monolayer can display variations compared to that of the NiCl3 monolayer, with the direction of easy magnetization being influenced by the specific halogen elements present. The easy magnetization direction of Ni2X3Y3 can also be changed by applying biaxial strain. The Tc of Ni2X3Y3 is predicted to be about 100 K according to the calculation of the EAFM-EFM model. The design of the Janus Ni2X3Y3 structure has expanded the range of 2D magnetic materials, a significant contribution has been made to the advancement of spintronics and its applications.

Positioning and atomic imaging of micron-size graphene sheets by a scanning tunneling microscope

We present a mechanism for directly positioning the tip over a micron-size sample by tracking the trajectory of the tip and tip shadow. A bilayer graphene sheet identified by Raman spectroscopy with a lateral size of 20 μm × 50 μm was transferred on the surface of shaped gold electrodes, on which it will be rapidly captured by a homebuilt scanning tunneling microscopy (STM) with the help of an optical microscope. Using the improved line-based imaging mode, atomic-resolution images featuring a hexagonal lattice structure on the bilayer graphene sheet were obtained by our positioning-capable STM. We have also observed a unique O-ring superstructure on graphene surface that caused by the collective interference near the boundaries or defects. Furthermore, we successfully captured a graphene sheet of size as small as 1.3 nm by a rapid and large-area searching operation; this is the first time that such a small graphene sheet has been observed with atomic resolution. The STM images of a micron-size graphene sheet illustrate the significant positioning ability and imaging precision of our homebuilt STM. Our results contribute to further STM studies on samples with ultra-small size.

Metal-Organic Frameworks and Their Derivatives-Based Nanostructure with Different Dimensionalities for Supercapacitors

With the urgent demand for the achievement of carbon neutrality, novel nanomaterials, and environmentally friendly nanotechnologies are constantly being explored and continue to drive the sustainable development of energy storage and conversion installations. Among various candidate materials, metal-organic frameworks (MOFs) and their derivatives with unique nanostructures have attracted increasing attention and intensive investigation for the construction of next generation electrode materials, benefitting from their unique intrinsic characteristics such as large specific surface area, high porosity, and chemical tunability as well as the interconnected channels. Nevertheless, the poor electrochemical conductivity severely limits their application prospects, hence a variety of nanocomposites with multifarious structures have been designed and proposed from different dimensionalities. In this review, recent advances based on MOFs and their derivatives in different dimensionalities ranging from 1D nanopowders to 2D nanofilms and 3D aerogels, as well as 4D self-supporting electrodes for supercapacitors are summarized and highlighted. Furthermore, the key challenges and perspectives of MOFs and their derivatives-based materials for the practical and sustainable electrochemical energy conversion and storage applications are also briefly discussed, which may be served as a guideline for the design of next-generation electrode materials from different dimensionalities.

Synthesis of Graphene and Graphene Films with Minimal Structural Defects

Graphene is a carbon material with extraordinary properties that has been drawing a significant amount of attention in the recent decade. High-quality graphene can be produced by different methods, such as epitaxial growth, chemical vapor deposition, and micromechanical exfoliation. The reduced graphene oxide route is, however, the only current approach that leads to the large-scale production of graphene materials at a reasonable cost. Unfortunately, graphene oxide reduction normally yields graphene materials with a high defect density. Here, we introduce a new route for the large-scale synthesis of graphene that minimizes the creation of structural defects. The method involves high-quality hydrogen functionalization of graphite followed by thermal dehydrogenation. We also demonstrated that the hydrogenated graphene synthesis route can be used for the preparation of high-quality graphene films on glass substrates. A reliable method for the preparation of these types of films is essential for the widespread implementation of graphene devices. The structural evolution from the hydrogenated form to graphene, as well as the quality of the materials and films, was carefully evaluated by Raman spectroscopy.

Temperature and Thickness Dependence of the Thermal Conductivity in 2D Ferromagnet Fe3GeTe2

The emergence of symmetry-breaking orders such as ferromagnetism and the weak interlayer bonding in van der Waals materials offers a unique platform to engineer novel heterostructures and tune transport properties like thermal conductivity. Here, we report the experimental and theoretical study of the cross-plane thermal conductivity, κ⊥, of the van der Waals two-dimensional (2D) ferromagnet Fe3GeTe2. We observe an increase in κ⊥ with thickness, indicating a diffusive transport regime with ballistic contributions. These results are supported by the theoretical analyses of the accumulated thermal conductivity, which show an important contribution of phonons with mean free paths between 10 and 200 nm. Moreover, our experiments show a reduction of κ⊥ in the low-temperature ferromagnetic phase occurring at the magnetic transition. The calculations show that this reduction in κ⊥ is associated with a decrease in the group velocities of the acoustic phonons and an increase in the phonon-phonon scattering of the Raman modes that couple to the magnetic phase. These results demonstrate the potential of van der Waals ferromagnets for thermal transport engineering.

Light-induced pure spin current in carbon hexagonal-connected zigzag graphene nanoribbons via magnetic field modulation

Pure spin current, exhibiting no Joule heat and self-powered characteristics, has recently attracted intensive attention. Here, through first-principles calculations and symmetry analysis, we propose a new method to generate photoelectric pure spin current in carbon hexagonal connected three zigzag graphene nanoribbons (ZGNRs) via magnetic field modulation. Specifically, a device with centro-symmetry is designed, which consists of three ZGNRs using two carbon hexagons as connectors ('2-C6'). When the edge spin states of the three ZGNRs from left to right are modulated to AFM-AFM-AFM or FM-AFM-FM by magnetic fields, excellent pure spin currents are obtained which are independent of the photon energy and the angle of the linearly polarized light. However, when the edge spin states are FM-FM-FM orderly, the photocurrent is nearly zero and can be neglected. Analysis show that the first two spin magnetic structures own the spatial inversion antisymmetric spin density which is the origin of stable pure spin currents, while the FM-FM-FM structure owns Cs symmetric spin density, leading to the nearly zero photocurrent. Our findings provide a scheme for obtaining pure spin currents by changing the spin states of the graphene nanoribbons via magnetic field modulation, which is of great importance for the design of spintronic devices.

Theoretical method for the analysis and design of tunable terahertz graphene-based Faraday polarization rotators

A theoretical method is presented that facilitates the analysis and design of graphene-based tunable terahertz polarization rotators. Most previous designs are based on a three-dimensional (3-D) full-wave electromagnetic simulation; thus, it is time-consuming to get well-tuned structural parameters. Using the proposed method, the transmission response of the polarization rotator is directly calculated for a given set of structural parameters. Hence, the need of the electromagnetic simulation is lifted. The accuracy of the proposed method is rigorously validated, as excellent agreement between the theoretical and simulation results is observed. Using the method, a rotator of 12 THz central frequency with a small magnetic bias field of 0.5 T and a small unit cell of 0.5 by 0.5(µm)2 is designed. It is shown that the center frequency can be increased to any desired frequency, without the need of a large magnetic bias, by reducing the unit cell size. The method presented in this work can be extended for the analysis and design of other tunable terahertz nonreciprocal devices, such as isolators, circulators, phase shifters, and switches.

Photoluminescence Properties of Graphene Oxide in Non-Aqueous Solvents

Detailed attention to the interaction between graphene oxide (GO) and various organic fluorophores has been documented in literature as a result of which the impact of GO on the photophysical properties of the fluorophores is well known to the scientific community. However, the photoluminescence (PL) properties of GO in polar aprotic solvents are yet to be established. In this article, the PL properties of GO in polar aprotic solvents using various spectroscopic techniques have been reported. n-π* transition due to the C=O bonds in the sp3 hybrid regions and π-π* transition due to C=C bonds in the sp2 hybrid are prominent in GO. The presence of quasi-molecules within sp2 -sp3 domains acts as PL centers located in the sp3 matrixes of GO are responsible for the PL properties. This study showcases the presence of multiple emissive states of GO in polar aprotic solvents and conveys the fact that the PL properties of GO are very much wavelength-dependent.

Mutual Information and Correlations across Topological Phase Transitions in Topologically Ordered Graphene Zigzag Nanoribbons

Graphene zigzag nanoribbons, initially in a topologically ordered state, undergo a topological phase transition into crossover phases distinguished by quasi-topological order. We computed mutual information for both the topologically ordered phase and its crossover phases, revealing the following results: (i) In the topologically ordered phase, A-chirality carbon lines strongly entangle with B-chirality carbon lines on the opposite side of the zigzag ribbon. This entanglement persists but weakens in crossover phases. (ii) The upper zigzag edge entangles with non-edge lines of different chirality on the opposite side of the ribbon. (iii) Entanglement increases as more carbon lines are grouped together, regardless of the lines' chirality. No long-range entanglement was found in the symmetry-protected phase in the absence of disorder.

Flexible Transparent Conductive Electrodes: Unveiling Growth Mechanisms, Material Dimensions, Fabrication Methods, and Design Strategies

Flexible transparent conductive electrodes (FTCEs) constitute an indispensable component in state-of-the-art electronic devices, such as wearable flexible sensors, flexible displays, artificial skin, and biomedical devices, etc. This review paper offers a comprehensive overview of the fabrication techniques, growth modes, material dimensions, design, and their impacts on FTCEs fabrication. The growth modes, such as the "Stranski-Krastanov growth," "Frank-van der Merwe growth," and "Volmer-Weber growth" modes provide flexibility in fabricating FTCEs. Application of different materials including 0D, 1D, 2D, polymer composites, conductive oxides, and hybrid materials in FTCE fabrication, emphasizing their suitability in flexible devices are discussed. This review also delves into the design strategies of FTCEs, including microgrids, nanotroughs, nanomesh, nanowires network, and "kirigami"-inspired patterns, etc. The pros and cons associated with these materials and designs are also addressed appropriately. Considerations such as trade-offs between electrical conductivity and optical transparency or "figure of merit (FoM)," "strain engineering," "work function," and "haze" are also discussed briefly. Finally, this review outlines the challenges and opportunities in the current and future development of FTCEs for flexible electronics, including the improved trade-offs between optoelectronic parameters, novel materials development, mechanical stability, reproducibility, scalability, and durability enhancement, safety, biocompatibility, etc.

A Universal Approach to Determine the Atomic Layer Numbers in Two-Dimensional Materials Using Dark-Field Optical Contrast

Two-dimensional (2D) materials possess unique properties primarily due to the quantum confinement effect, which highly depends on their thicknesses. Identifying the number of atomic layers in these materials is a crucial, yet challenging step. However, the commonly used optical reflection method offers only very low contrast. Here, we develop an approach that shows unprecedented sensitivity by analyzing the brightness of dark-field optical images. The brightness of the 2D material edges has a linear dependence on the number of atomic layers. The findings are modeled by Rayleigh scattering, and the results agree well with the experiments. The relative contrast of single-layer graphene can reach 70% under white-light incident conditions. Furthermore, different 2D materials were successfully tested. By adjusting the exposure conditions, we can identify the number of atomic layers ranging from 1 to over 100. Finally, this approach can be applied to various substrates, even transparent ones, making it highly versatile.

Modification on Flower Defects and Electronic Properties of Epitaxial Graphene by Erbium

Manipulating the topological defects and electronic properties of graphene has been a subject of great interest. In this work, we have investigated the influence of Er predeposition on flower defects and electronic band structures of epitaxial graphene on SiC. It is shown that Er atoms grown on the SiC substrate actually work as an activator to induce flower defect formation with a density of 1.52 × 1012 cm-2 during the graphitization process when the Er coverage is 1.6 ML, about 5 times as much as that of pristine graphene. First-principles calculations demonstrate that Er greatly decreases the formation energy of the flower defect. We have discussed Er promoting effects on flower defect formation as well as its formation mechanism. Scanning tunneling microscopy (STM) and Raman and X-ray photoelectron spectroscopy (XPS) have been utilized to reveal the Er doping effect and its modification to electronic structures of graphene. N-doping enhancement and band gap opening can be observed by using angle-resolved photoemission spectroscopy (ARPES). With Er coverage increasing from 0 to 1.6 ML, the Dirac point energy decreases from -0.34 to -0.37 eV and the band gap gradually increases from 320 to 360 meV. The opening of the band gap is attributed to the synergistic effect of substitution doping of Er atoms and high-density flower defects.

Gapless edge states localized to odd/even layers of AA'-stacked honeycomb multilayers with staggered AB-sublattice potentials

In honeycomb multilayers with staggered AB-sublattice potentials, we predict gapless edge states localized to either of the odd and the even layers for the AA[Formula: see text] stacking order in which the sublattice-pseudospin polarizations of adjacent layers are antiparallel. Gaps in the projected layer-pseudospin spectrum suppress interlayer hopping between odd and even layers. The layer-valley Chern number corresponding to the edge states was obtained by decomposing the occupied state into two layer-pseudospin sectors by using a projected layer-pseudospin operator. For the AB[Formula: see text] stacking, the sublattice-pseudospin polarizations of adjacent layers are antiparallel, but the layer-pseudospin spectrum gap closes at the interface of the topologically different states, leading to gapped edge states. For the AA and AB stackings where the sublattice-pseudospin polarizations of the adjacent layers are parallel, the gapless edge states corresponding to quantum valley Hall states are evenly distributed across the layers.

Emerging Opportunities for 2D Materials in Neuromorphic Computing

Recently, two-dimensional (2D) materials and their heterostructures have been recognized as the foundation for future brain-like neuromorphic computing devices. Two-dimensional materials possess unique characteristics such as near-atomic thickness, dangling-bond-free surfaces, and excellent mechanical properties. These features, which traditional electronic materials cannot achieve, hold great promise for high-performance neuromorphic computing devices with the advantages of high energy efficiency and integration density. This article provides a comprehensive overview of various 2D materials, including graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), and black phosphorus (BP), for neuromorphic computing applications. The potential of these materials in neuromorphic computing is discussed from the perspectives of material properties, growth methods, and device operation principles.