Recent Advances in Two-Dimensional Materials beyond Graphene

Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications

Channel current conduction modulation with the spontaneous polarization of ferroelectric films in ferroelectric field-effect transistors (FeFETs) has been widely investigated. Low interface quality and thermodynamic instability owing to the presence of dangling bonds in the conventional ferroelectrics have limited the memory retention and endurance of FeFETs. This, in turn, prevents their commercialization. However, the atomically thin nature of 2D ferroelectric, semiconducting, and insulating films facilitate the achievement of trap-free interfaces as van der Waal heterostructures (vdWHs) to develop FeFETs with long data retention and endurance characteristics. Here, we demonstrate a 2D vdWH FeFET fabricated with ferroelectric CuInP₂S₆ (CIPS), hexagonal boron nitride (h-BN) as the dielectric, and InSe as the ferroelectric semiconductor channel. The device shows an excellent performance as nonvolatile memory (NVM) with its large memory window (4.6 V at a voltage sweep of 5 V), high drain current on/off ratio (>10⁴), high endurance, and long data retention (>10⁴ s). These results demonstrate the considerable potential of vdWHs for the development of FeFETs for logic and NVM applications.

An expanded sandwich-like heterostructure with thin FeP nanosheets@graphene via charge-driven self-assembly as high-performance anodes for sodium ion battery

In this work, we simply fabricate a novel expanded sandwich-like heterostructure of iron-phosphide nanosheets in between reduced graphene oxide (expanded FeP NSs@rGO) with a high ratio of FeP/Fe-PO_x and an expanded structure via a charge-driven self-assembly method by exploiting polystyrene beads (PSBs) as a sacrificial template. In such a design, even after the decomposition of PSBs during the annealing process, the PSBs successfully provide ample space between the nanosheets, enabling a structure with long-term stability and high ionic conductivity. Importantly, the PSBs are decomposed and simultaneously reacted with oxidized iron-phosphide (Fe-PO_x) on the surface of the nanosheets to reduce into FeP. As a result, the expanded FeP NSs@rGO results in a high content of FeP (52.3%) and remarkable electrochemical performances when it is used for sodium-ion battery anodes. The expanded FeP NSs@rGO exhibits a high capacity of 916.1 mA h g^-1 at 0.1 A g^-1, a superior rate capability of 440.9 mA h g^-1 at 5 A g^-1, and a long-term cycling stability of 85.4% capacity retention after 1000 cycles at 1 A g^-1. In addition, the full cell also exhibits excellent capacity, rate capability, and cycling stability. This study clearly demonstrates that an increase in FeP proportion is directly related to an increase in capacity. This facile method of synthesizing rationally designed heterostructures is expected to provide a novel strategy to create nanostructures for advanced energy storage applications.

Charged lithium adsorption on pristine and defective silicene: a theoretical study

We investigated by first principle calculations the adsorption of Li^q(q= -1, 0 or +1) on a silicene single layer. Pristine and three different defective silicene configurations with and without Li doping were studied: single vacancy (SV), double vacancy (DV) and Stone-Wales (STW). Structural studies and the adsorption energies of various sites were obtained and compared in order to understand the stability of the Li on the surface. Moreover, electronic structure and charge density difference analysis were performed before and after adsorption at the most stables sites, which showed the presence of a magnetic moment in the undoped SV system, the displacement of the Fermi level produced by Li doping and a charge transfer from Li to the surface. Additionally, quantum capacity (QC) and charge density studies were performed on these systems. This analysis showed that the generation of defects and doping improves the QC of silicene in positive bias, because of the existence of 3p orbital in the zone of the defect. Consequently, the innovative calculations performed in this work of charged lithium doping on silicene can be used for future comparison with experimental studies of this Li-ion battery anode material candidate.

Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe₂ grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative of a high-quality WSe₂ layer produced via vdW epitaxy. This is confirmed by in-plane X-ray diffraction. The single layer of WSe₂ and the absence of interdiffusion at the interface are confirmed by high resolution X-ray photoemission spectroscopy and high-resolution transmission microscopy. Angle-resolved photoemission investigation revealed a well-defined WSe₂ band dispersion and a high p-doping coming from the charge transfer between the WSe₂ monolayer and the Se-terminated GaAs substrate. By comparing our results with local and hybrid functionals theoretical calculation, we find that the top of the valence band of the experimental heterostructure is close to the calculations for free standing single layer WSe₂. Our experiments demonstrate that the proximity of the Se-terminated GaAs substrate can significantly tune the electronic properties of WSe₂. The valence band maximum (VBM, located at the K point of the Brillouin zone) presents an upshift of about 0.56 eV toward the Fermi level with respect to the VBM of the WSe₂ on graphene layer, which is indicative of high p-type doping and a key feature for applications in nanoelectronics and optoelectronics.

Tuning the Electronic and Optical Properties of the Novel Monolayer Noble-Transition-Metal Dichalcogenides Semiconductor β-AuSe via Strain: A Computational Investigation

The strain-controlled structural, electronic, and optical characteristics of monolayer β-AuSe are systematically studied using first-principles calculations in this paper. For the strain-free monolayer β-AuSe, the structure is dynamically stable and maintains good stability at room temperature. It belongs to the indirect band gap semiconductor, and its valence band maximum (VBM) and conduction band minimum (CBM) consist of hybrid Au-d and Se-p electrons. Au–Se is a partial ionic bond and a partial polarized covalent bond. Meanwhile, lone-pair electrons exist around Se and are located between different layers. Moreover, its optical properties are anisotropic. As for the strained monolayer β-AuSe, it is susceptible to deformation by uniaxial tensile strain. It remains the semiconductor when applying different strains within an extensive range; however, only the biaxial compressive strain is beyond −12%, leading to a semiconductor–semimetal transition. Furthermore, it can maintain relatively stable optical properties under a high strain rate, whereas the change in optical properties is unpredictable when applying different strains. Finally, we suggest that the excellent carrier transport properties of the strain-free monolayer β-AuSe and the stable electronic properties of the strained monolayer β-AuSe originate from the p–d hybridization effect. Therefore, we predict that monolayer β-AuSe is a promising flexible semiconductive photoelectric material in the high-efficiency nano-electronic and nano-optoelectronic fields.

Transport Simulation of Graphene Devices with a Generic Potential in the Presence of an Orthogonal Magnetic Field

The effect of an orthogonal magnetic field is introduced into a numerical simulator, based on the solution of the Dirac equation in the reciprocal space, for the study of transport in graphene devices consisting of armchair ribbons with a generic potential. Different approaches are proposed to reach this aim. Their efficiency and range of applicability are compared, with particular focus on the requirements in terms of model setup and on the possible numerical issues that may arise. Then, the extended code is successfully validated, simulating several interesting magnetic-related phenomena in graphene devices, including magnetic-field-induced energy-gap modulation, coherent electron focusing, and Aharonov-Bohm interference effects.

Exploring a silicene monolayer as a promising sensor platform to detect and capture NO and CO gas

Searching for new two-dimensional (2D) materials for the early and efficient detection and capture of toxic gas has received special attention from researchers. In this work, we investigate the adsorption of NO and CO molecules onto a silicene monolayer using first-principles calculations. Different numbers of adsorbates, as well as adsorption configurations, have been considered. The results show that up to four NO molecules can be chemically adsorbed onto the pristine monolayer with adsorption energies varying between −0.32 and −1.22 eV per molecule. In these cases, the gas adsorption induces feature-rich electronic behaviors, including magnetic semiconducting and half-metallicity, where the magnetic properties are produced mainly by the adsorbates. Except for two CO molecules adsorbing onto two adjacent Si atoms with an adsorption energy of −0.26 eV per molecule, other adsorption configurations show weak physisorption of CO molecules onto the pristine silicene platform. However, the sensitivity can be enhanced considerably by doping with Al atoms, drastically reducing the adsorption energy to between −0.19 and −0.71 eV per molecule. The doping and adsorption process may lead to either band gap opening or metallization, depending on its configuration. This study reveals the promising applicability of pristine and Al doped silicene monolayers as sensors for more than one single NO and CO molecule.

Magnetic and electronic properties of the NO-adsorbed silicene monolayer have been investigated.

Unveiling a Chemisorbed Crystallographically Heterogeneous Graphene/L10-FePd Interface with a Robust and Perpendicular Orbital Moment

A crystallographically heterogeneous interface was fabricated by growing hexagonal graphene (Gr) using chemical vapor deposition (CVD) on a tetragonal FePd epitaxial film grown by magnetron sputtering. FePd was alternately arranged with Fe and Pd in the vertical direction, and the outermost surface atom was identified primarily as Fe rather than Pd. This means that FePd has a high degree of L1₀-ordering, and the outermost Fe bonds to the carbon of Gr at the interface. When Gr is grown by CVD, the crystal orientation of hexagonal Gr toward tetragonal L1₀-FePd selects an energetically stable structure based on the van der Waals (vdW) force. The atomic relationship of Gr/L1₀-FePd, which is an energetically stable interface, was unveiled theoretically and experimentally. The Gr armchair axis was parallel to FePd [100]_L10, where Gr was under a small strain by chemical bonding. Focusing on the interatomic distance between the Gr and FePd layers, the distance was theoretically and experimentally determined to be approximately 0.2 nm. This shorter distance (≈0.2 nm) can be explained by the chemisorption-type vdW force of strong orbital hybridization, rather than the longer distance (≈0.38 nm) of the physisorption-type vdW force. Notably, depth-resolved X-ray magnetic circular dichroism analyses revealed that the orbital magnetic moment (M_l) of Fe in FePd emerged at the Gr/FePd interface (@inner FePd: M_l = 0.16 μ_B → @Gr/FePd interface: M_l = 0.32 μ_B). This interfacially enhanced M_l showed obvious anisotropy in the perpendicular direction, which contributed to interfacial perpendicular magnetic anisotropy (IPMA). Moreover, the interfacially enhanced M_l and interfacially enhanced electron density exhibited robustness. It is considered that the shortening of the interatomic distance produces a robust high electron density at the interface, resulting in a chemisorption-type vdW force and orbital hybridization. Eventually, the robust interfacial anisotropic M_l emerged at the crystallographically heterogeneous Gr/L1₀-FePd interface. From a practical viewpoint, IPMA is useful because it can be incorporated into the large bulk perpendicular magnetic anisotropy (PMA) of L1₀-FePd. A micromagnetic simulation assuming both PMA and IPMA predicted that perpendicularly magnetized magnetic tunnel junctions (p-MTJs) using Gr/L1₀-FePd could realize 10-year data retention in a small recording layer with a circular diameter and thickness of 10 and 2 nm, respectively. We unveiled the energetically stable atomic structure in the crystallographically heterogeneous interface, discovered the emergence of the robust IPMA, and predicted that the Gr/L1₀-FePd p-MTJ is significant for high-density X nm generation magnetic random-access memory (MRAM) applications.

Semiconductor-to-metal transition from monolayer to bilayer blue phosphorous induced by extremely strong interlayer coupling: a first-principles study

Monolayer blue phosphorous has a large band gap of 2.76 eV but counterintuitively the most stable bilayer blue phosphorous has a negative band gap of -0.51 eV. Such a large band gap reduction from just monolayer to bilayer has not been revealed before, the underlying mechanism behind which is important for understanding interlayer interactions. In this work, we reveal the origin of the semiconductor-to-metal transition using first-principles calculations and tight-binding models. We find that the interlayer interactions are extremely strong, which can be attributed to the short layer distance and strong π-like atomic orbital couplings. Therefore, the upshift of the valence band maximum (VBM) from monolayer to bilayer blue-P is so large that the VBM in the bilayer gets higher than the conduction band minimum, leading to a negative band gap and an energy gain. Besides, the interlayer atomic misplacements weaken the couplings of out-of-plane orbitals. Therefore, the energy gain due to the semiconductor-to-metal transition is larger than the energy cost due to interlayer repulsions, thus stabilizing the metallic phase. The large band gap reduction with layer number increasing is expected to exist in other similar layered systems.

Simulation of scanning near-field optical microscopy spectra of 1D plasmonic graphene junctions

We present numerical simulations of scattering-type scanning near-field optical microscopy (s-SNOM) of 1D plasmonic graphene junctions. A comprehensive analysis of simulated s-SNOM spectra is performed for three types of junctions. We find conditions when the conventional interpretation of the plasmon reflection coefficients from s-SNOM measurements does not apply. Our approach can be used for other conducting 2D materials to provide a comprehensive understanding of the s-SNOM techniques for probing the local transport properties of 2D materials.

Enhanced light-matter interaction in two-dimensional transition metal dichalcogenides

Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS₂, WS₂, MoSe₂, and WSe₂, have received extensive attention in the past decade due to their extraordinary electronic, optical and thermal properties. They evolve from indirect bandgap semiconductors to direct bandgap semiconductors while their layer number is reduced from a few layers to a monolayer limit. Consequently, there is strong photoluminescence in a monolayer (1L) TMDC due to the large quantum yield. Moreover, such monolayer semiconductors have two other exciting properties: large binding energy of excitons and valley polarization. These properties make them become ideal materials for various electronic, photonic and optoelectronic devices. However, their performance is limited by the relatively weak light-matter interactions due to their atomically thin form factor. Resonant nanophotonic structures provide a viable way to address this issue and enhance light-matter interactions in 2D TMDCs. Here, we provide an overview of this research area, showcasing relevant applications, including exotic light emission, absorption and scattering features. We start by overviewing the concept of excitons in 1L-TMDC and the fundamental theory of cavity-enhanced emission, followed by a discussion on the recent progress of enhanced light emission, strong coupling and valleytronics. The atomically thin nature of 1L-TMDC enables a broad range of ways to tune its electric and optical properties. Thus, we continue by reviewing advances in TMDC-based tunable photonic devices. Next, we survey the recent progress in enhanced light absorption over narrow and broad bandwidths using 1L or few-layer TMDCs, and their applications for photovoltaics and photodetectors. We also review recent efforts of engineering light scattering, e.g., inducing Fano resonances, wavefront engineering in 1L or few-layer TMDCs by either integrating resonant structures, such as plasmonic/Mie resonant metasurfaces, or directly patterning monolayer/few layers TMDCs. We then overview the intriguing physical properties of different van der Waals heterostructures, and their applications in optoelectronic and photonic devices. Finally, we draw our opinion on potential opportunities and challenges in this rapidly developing field of research.

Insertion of the Liquid Crystal 5CB into Monovacancy Graphene

Interfacial interactions between liquid crystal (LC) and two-dimensional (2D) materials provide a platform to facilitate novel optical and electronic material properties. These interactions are uniquely sensitive to the local energy landscape of the atomically thick 2D surface, which can be strongly influenced by defects that are introduced, either by design or as a byproduct of fabrication processes. Herein, we present density functional theory (DFT) calculations of the LC mesogen 4-cyan-4'-pentylbiphenyl (5CB) on graphene in the presence of a monovacancy (MV-G). We find that the monovacancy strengthens the binding of 5CB in the planar alignment and that the structure is lower in energy than the corresponding homeotropic structure. However, if the molecule is able to approach the monovacancy homeotropically, 5CB undergoes a chemical reaction, releasing 4.5 eV in the process. This reaction follows a step-by-step process gradually adding bonds, inserting the 5CB cyano group into MV-G. We conclude that this irreversible insertion reaction is likely spontaneous, potentially providing a new avenue for controlling both LC behavior and graphene properties.

Commensurate Assembly of C60 on Black Phosphorus for Mixed-Dimensional van der Waals Transistors

2D crystals can serve as templates for the realization of new van der Waals (vdW) heterostructures via controlled assembly of low-dimensional functional components. Among available 2D crystals, black phosphorus (BP) is unique due to its puckered atomic surface topography, which may lead to strong epitaxial phenomena through guided vdW assembly. Here, it is demonstrated that a BP template can induce highly oriented assembly of C₆₀ molecular crystals. Transmission electron microscopy and theoretical analysis of the C₆₀ /BP vdW heterostructure clearly confirm that the BP template results in oriented C₆₀ assembly with higher-order commensurism. Lateral and vertical devices with C₆₀ /BP junctions are fabricated via a lithography-free clean process, which allows one to investigate the ideal electrical properties of pristine C₆₀ /BP junctions. Effective tuning of the C₆₀ /BP junction barrier from 0.2 to 0.5 eV and maximum on-current density higher than 10⁴  mA cm^-2 are achieved with graphite/C₆₀ /BP vertical vdW transistors. Due to the formation of high-quality C₆₀ film and the semitransparent graphite top-electrode, the vertical transistors show high photoresponsivities up to ≈100 A W^-1 as well as a fast response time under visible light illumination.

Stability and electronic properties of gallenene

Two-dimensional metals offer intriguing possibilities to explore the metallic and other related properties in systems with reduced dimensionality. Here, following recent experimental reports of synthesis of two-dimensional metallic gallium (gallenene) on insulating substrates, we conduct a computational search of gallenene structures using the Particle Swarm Optimization algorithm, and identify stable low energy structures. Our calculations of the critical temperature for conventional superconductivity yield values of ∼7 K for gallenene. We also emulate the presence of the substrate by introducing the external confining potential and test its effect on the structures with unstable phonons.

Large-range and high-precision autofocus method based on an annular DOE for a laser direct writing system

We present a large-range and high-precision autofocus method based on an annular diffractive optical element (DOE) for a laser direct writing system. By analyzing the shape of the return spot, the defocus direction and the defocus amount can be obtained at the same time. The experimental results show that the linear detection range of the proposed method can reach at least 76 µm, the sensitivity can reach 100 nm, the detection accuracy can reach 100 nm, and the noise fluctuation does not exceed 50 nm. Apparently, with the advantages of a large detection range, high detection, and good stability, the automatic focus detection method proposed in this paper can be widely applied in various wafer-scale complex microstructure preparation systems.

Enhanced photoresponse of PVP:GaSe nanocomposite thin film based photodetectors

Two-dimensional materials have become the focus of attention of researchers in recent years. The demand for two-dimensional materials is increasing day by day, especially with the inadequacy of graphene in optical applications. In this context, the optical and electrical characteristics of the PVP:GaSe thin film nanocomposites were investigated. The surface morphologies of the samples were characterized by SEM, the thin film thicknesses and refractive index parameters were measured by the Ellipsometer method, the structural characteristics were obtained by XRD, and Raman and PL spectroscopy was used to determine the optical characteristics. Critical parameters of Au/PVP:GaSe/n-Si photodetector were calculated under various illumination intensities. It is observed that photodetector with PVP:%5GaSe thin film has the best performance results. According to the experimental results, its responsivity, external quantum efficiency, and detectivity values are 0.485 A W^-1, %86, and 1.14 × 10⁷cm Hz^1/2W^-1respectively.

Strain-tuned mechanical, electronic, and optoelectronic properties of two-dimensional transition metal sulfides ZrS2: a first-principles study

Two-dimensional semiconductor material zirconium disulfide (ZrS₂) monolayer is a new promising material with good prospects for nanoscale applications. Recently, a new zirconium disulfide (ZrS₂) monolayer with a space group of 59_Pmmn has been successfully predicted. Using first-principles calculations, this new monolayer ZrS₂ structure is obtained with stable indirect bandgaps of 0.65 eV and 1.46 eV at the DFT-PBE (HSE06) functional levels, respectively. Strain engineering studies on the ZrS₂ monolayer show effective bandgap modulation. The bandgap shows a nearly linear regularity from narrow to wide under strain (ranged from - 6 to + 8%). Young's modulus of elasticity of ZrS₂ along the tensile directions (x-axis and y-axis) is 83.63 (N/m) and 63.61 (N/m) with Poisson's ratios of 0.09 and 0.07, respectively. The results of carrier mobility show that the electron mobility along the y-axis can reach 1.32 × 10³ cm² V^-1 s^-1. Besides, the order of magnitude of the light absorption coefficient in the ultraviolet spectral region is calculated to reach 2.0 × 10⁵ cm^-1 for ZrS₂ monolayers. Moreover, the bandgap and band edge position of Pmmn-ZrS₂ can satisfy the redox potentials of photocatalytic water splitting by strain regulating. The results indicate that the new two-dimensional Pmmn-ZrS₂ monolayer is a potential material for photovoltaic devices and photocatalytic water decomposition.

Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping

Carrier modulation in transition-metal dichalcogenides (TMDCs) is of importance for applying electronic devices to tune their transport properties and controlling phases, including metallic to superconductivity. Although the surface charge transfer doping method has shown a strong modulation ability of the electronic structures in TMDCs and a degenerately doped state has been proposed, the details of the electronic states have not been elucidated, and this transport behavior should show a considerable thickness dependence in TMDCs. In this study, we characterize the metallic transport behavior in the monolayer and multilayer MoS₂ under surface charge transfer doping with a strong electron dopant, benzyl viologen (BV) molecules. The metallic behavior transforms to an insulative state under a negative gate voltage. Consequently, metal-insulator transition (MIT) was observed in both monolayer and multilayer MoS₂ correlating with the critical conductivity of order e²/h. In the multilayer case, the BV molecules strongly modulated the topmost surface layer in the bulk MoS₂; the transfer characteristics suggested a crossover from a heterogeneously doped state with a doped topmost layer to doping in the deep layers caused by the variation in the gate voltage. The findings of this work will be useful for understanding the device characteristics of thin-layered materials and for applying them to the controlling phases via carrier modulation.

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing

Two-dimensional (2D) transition metal chalcogenides (TMC) and their heterostructures are appealing as building blocks in a wide range of electronic and optoelectronic devices, particularly futuristic memristive and synaptic devices for brain-inspired neuromorphic computing systems. The distinct properties such as high durability, electrical and optical tunability, clean surface, flexibility, and LEGO-staking capability enable simple fabrication with high integration density, energy-efficient operation, and high scalability. This review provides a thorough examination of high-performance memristors based on 2D TMCs for neuromorphic computing applications, including the promise of 2D TMC materials and heterostructures, as well as the state-of-the-art demonstration of memristive devices. The challenges and future prospects for the development of these emerging materials and devices are also discussed. The purpose of this review is to provide an outlook on the fabrication and characterization of neuromorphic memristors based on 2D TMCs.

Two-dimensional ferroelasticity and negative Poisson's ratios in monolayer YbX (X = S, Se, Te)

Two-dimensional ferroelastic materials and two-dimensional materials with negative Poisson's ratios have attracted great interest. Here, using first-principles calculations, we reveal monolayer YbX (X = S, Se, Te) materials that harbor both ferroelasticity and negative Poisson's ratios. Indirect wide band gaps of about 3 eV have been found in these three materials. Mechanical analysis reveals that the three materials are flexible and they possess large in-plane negative Poisson's ratios from -0.114 to -0.366. Meanwhile, the ferroelasticity in the monolayer YbX shows moderate energy barriers and strong ferroelastic signals, beneficial for applications in shape memory devices. These intriguing properties make monolayer YbX promising candidate materials for applications in nanoelectronics and nanomechanics.

Chalcogen···Chalcogen Bonding in Molybdenum Disulfide, Molybdenum Diselenide and Molybdenum Ditelluride Dimers as Prototypes for a Basic Understanding of the Local Interfacial Chemical Bonding Environment in 2D Layered Transition Metal Dichalcogenides

An attempt was made, using computational methods, to understand whether the intermolecular interactions in the dimers of molybdenum dichalcogenides MoCh2 (Ch = chalcogen, element of group 16, especially S, Se and Te) and similar mixed-chalcogenide derivatives resemble the room temperature experimentally observed interactions in the interfacial regions of molybdenites and their other mixed-chalcogen derivatives. To this end, MP2(Full)/def2-TVZPPD level electronic structure calculations on nine dimer systems, including (MoCh2)2 and (MoChCh′2)2 (Ch, Ch′ = S, Se and Te), were carried out not only to demonstrate the energetic stability of these systems in the gas phase, but also to reproduce the intermolecular geometrical properties that resemble the interfacial geometries of 2D layered MoCh2 systems reported in the crystalline phase. Among the six DFT functionals (single and double hybrids) benchmarked against MP2(full), it was found that the double hybrid functional B2PLYPD3 has some ability to reproduce the intermolecular geometries and binding energies. The intermolecular geometries and binding energies of all nine dimers are discussed, together with the charge density topological aspects of the chemical bonding interactions that emerge from the application of the quantum theory of atoms in molecules (QTAIM), the isosurface topology of the reduced density gradient noncovalent index, interaction region indicator and independent gradient model (IGM) approaches. While the electrostatic surface potential model fails to explain the origin of the S···S interaction in the (MoS2)2 dimer, we show that the intermolecular bonding interactions in all nine dimers examined are a result of hyperconjugative charge transfer delocalizations between the lone-pair on (Ch/Ch′) and/or the π-orbitals of a Mo–Ch/Ch′ bond of one monomer and the dπ* anti-bonding orbitals of the same Mo–Ch/Ch′ bond in the second monomer during dimer formation, and vice versa. The HOMO–LUMO gaps calculated with the MN12-L functional were 0.9, 1.0, and 1.1 eV for MoTe2, MoSe2 and MoS2, respectively, which match very well with the solid-state theoretical (SCAN-rVV10)/experimental band gaps of 0.75/0.88, 0.90/1.09 and 0.93/1.23 eV of the corresponding systems, respectively. We observed that the gas phase dimers examined are perhaps prototypical for a basic understanding of the interfacial/inter-layer interactions in molybdenum-based dichalcogenides and their derivatives.

All-Optical Modulation Technology Based on 2D Layered Materials

In the advancement of photonics technologies, all-optical systems are highly demanded in ultrafast photonics, signal processing, optical sensing and optical communication systems. All-optical devices are the core elements to realize the next generation of photonics integration system and optical interconnection. Thus, the exploration of new optoelectronics materials that exhibit different optical properties is a highlighted research direction. The emerging two-dimensional (2D) materials such as graphene, black phosphorus (BP), transition metal dichalcogenides (TMDs) and MXene have proved great potential in the evolution of photonics technologies. The optical properties of 2D materials comprising the energy bandgap, third-order nonlinearity, nonlinear absorption and thermo-optics coefficient can be tailored for different optical applications. Over the past decade, the explorations of 2D materials in photonics applications have extended to all-optical modulators, all-optical switches, an all-optical wavelength converter, covering the visible, near-infrared and Terahertz wavelength range. Herein, we review different types of 2D materials, their fabrication processes and optical properties. In addition, we also summarize the recent advances of all-optical modulation based on 2D materials. Finally, we conclude on the perspectives on and challenges of the future development of the 2D material-based all-optical devices.

Coexistence of intrinsic room-temperature ferromagnetism and piezoelectricity in monolayer BiCrX3 (X = S, Se, and Te)

Two-dimensional (2D) materials with intrinsic ferromagnetism and piezoelectricity have received growing attention due to their potential applications in nanoscale spintronic devices. However, their applications are highly limited by the low Curie temperatures (T_C) and small piezoelectric coefficients. Here, using first-principles calculations, we have successfully predicted that BiCrX₃ (X = S, Se, and Te) monolayers simultaneously possess ferromagnetism and piezoelectricity by replacing one layer of Bi atoms with Cr atoms in Bi₂X₃ monolayers. Our results demonstrate that BiCrX₃ monolayers are not only intrinsic ferromagnetic semiconductors with indirect band gaps, adequate T_C values of higher than 300 K, and significant out-of-plane magnetic anisotropic energies, but also exhibit appreciable in-plane and out-of-plane piezoelectricity. In particular, the in-plane piezoelectric coefficients of BiCrX₃ monolayers with ABCAB configuration are up to 15.16 pm V^-1, which is higher than those of traditional three-dimensional piezoelectric materials such as α-quartz. The coexistence of ferromagnetism and piezoelectricity in BiCrX₃ monolayers gives them promising applications in spintronics and nano-sized sensors.

Two-Dimensional Titanium Carbide (Ti3C2Tx) MXenes to Inhibit the Shuttle Effect in Sodium Sulfur Batteries

Room-temperature sodium sulfur batteries (RT-NSBs) are among the promising candidates for large-scale energy storage applications because of the natural abundance of the electrode materials and impressive energy density. However, one...

Electronic and thermoelectric properties of semiconducting Bi2SSe2 and Bi2S2Se monolayers with high optical absorption

Accurate effective mass via precise 3D-band calculations of two new 2D semiconductors Bi2SSe2 and Bi2S2Se with high optical absorption.

Synthesis of photo-responsive indium selenides (InSe and In2Se3) from tris(4,6-dimethyl-2-pyrimidylselenolato)indium(iii) as a molecular precursor

Facile and selective synthesis of phase pure photo-responsive InSe and In2Se3 nanostructures employing air-stable In[Sepym(Me-4,6)2]3 as a novel molecular precursor.

Antimicrobial Mechanisms of Biomaterials: From Macro to Nano

Overcoming the global concern of antibiotic resistance is one of the biggest challenge faced by scientists today and the key to tackle this issue of emerging infectious diseases is the...

High performance and gate-controlled GeSe/HfS2 negative differential resistance device

A novel and astonishing p-GeSe/n-HfS2 NDR device shows a high value for the peak-to-valley current ratio in the range of 5.8.

Methods of synthesis, characteristics, and environmental applications of MXene: A comprehensive review

MXene, comprised of two-dimensional transition metal carbides/nitride, has emerged as a novel material suitable for environmental remediation of toxic compounds. Due to their inherent and superior physical and chemical properties, MXene is employed in separation techniques like photocatalysis, adsorption, and membrane separation. MXene is equipped with a highly hydrophilic surface, ion exchange property, and robust surface functional groups. In this review paper, a comprehensive discussion on the structural patterns, preparation, properties of MXene and its application for the removal of toxic pollutants like Radionuclide, Uranium, Thorium, and dyes is presented. The mechanism of removal of the pollutants by MXene is extensively reviewed. Synthesis of MXene based membranes, their properties, and application for water purification and properties were also discussed. This review will be highly helpful to understand critically the methods of synthesis and use of MXene material for priority environmental pollutants removal. In addition, the challenges behind the synthesis and use of MXene for decontamination of pollutants were reviewed and reported.

Janus monolayer HfSO with improved optical properties as a novel material for photovoltaic and photocatalyst applications

First principles calculations were performed to investigate the photocatalytic behavior of 2D Janus monolayer HfSO at equilibrium and under the influence of strains and external electric fields.

Electronic and transport property of two-dimensional boron phosphide sheet

Using density functional theory (DFT) approach, we have investigated the effect of strain on the electronic properties of two-dimensional (2D) boron phosphide (BP) sheet. With the increase in uniaxial and biaxial tensile strain band gap increases while band gap decreases and becomes metallic with the increase in uniaxial and biaxial compressive strain. Electrical and thermal transport properties of zigzag and armchair 2D BP sheets have been explored using nonequilibrium Green's function formalism (NEGF) and the changes in the nature of I-V characteristics with the application of strain have been reported. The magnitude of the current decreases with the increase of strain value along transport direction for both zigzag and armchair 2D BP sheets. For unstrained systems, the magnitude of current is nearly same for both zigzag and armchair 2D BP sheets. However, for a particular strain value, magnitude of current is more for zigzag sheet compared to armchair sheet. Though both zigzag and armchair 2D BP sheets have reasonably high ZT_e which confirms its potentiality for designing efficient thermoelectric material but zigzag sheet is more preferable for thermoelectric application compared to armchair sheet due to its higher ZT_e in comparison to armchair sheet_.

Versatile Post-Doping toward Two-Dimensional Semiconductors

We have developed a simple and straightforward way to realize controlled postdoping toward 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic-energy dopant beams and a high-flux chalcogen beam simultaneously, leading to substitutional doping with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. The electronic properties of doped TMDs (Nb-doped WSe₂) have shown drastic change and p-type action with more than 2 orders of magnitude increase in current. Position-selective doping has also been demonstrated by the postdoping toward TMDs with a patterned mask on the surface. The postdoping method developed in this work can be a versatile tool for 2D-based next-generation electronics in the future.

Data-Driven Studies of the Magnetic Anisotropy of Two-Dimensional Magnetic Materials

A key issue in layered materials is the dependence of their properties on their chemical composition and crystal structure in addition to the dimensionality. For instance, atomically thin magnetic structures exhibit novel spin properties that do not exist in the bulk. We use first-principles calculations, based on density functional theory, and machine learning to study the magnetocrystalline anisotropy of a set of single-layer two-dimensional structures that are derived from changing the chemical composition of the ferromagnetic semiconductor Cr₂Ge₂Te₆. We discuss trends and identify descriptors for the magnetocrystalline anisotropy in monolayers with the chemical formula A₂B₂X₆. Our data-driven study aims to provide physical insights into the microscopic origins of magnetic anisotropy in two dimensions. For instance, we demonstrate that hybridization plays a key role in determining the magnetic anisotropy of the materials investigated in this study. In addition, we demonstrate that first-principles calculations can be combined with machine learning to create a high-throughput computational approach for the targeted design of quantum materials with potential applications in areas ranging from sensing to data storage.

Synergistic Effect of Metal Cations and Visible Light on 2D MoS2 Nanosheet Aggregation

Aggregation significantly influences the transport, transformation, and bioavailability of engineered nanomaterials. Two-dimensional MoS₂ nanosheets are one of the most well-studied transition-metal dichalcogenide nanomaterials. Nonetheless, the aggregation behavior of this material under environmental conditions is not well understood. Here, we investigated the aggregation of single-layer MoS₂ (SL-MoS₂) nanosheets under a variety of conditions. Trends in the aggregation of SL-MoS₂ are consistent with classical Derjaguin-Landau-Verwey-Overbeek (DLVO) colloidal theory, and the critical coagulation concentrations of cations follow the order of trivalent (Cr³⁺) < divalent (Ca²⁺, Mg²⁺, Cd²⁺) < monovalent cations (Na⁺, K⁺). Notably, Pb²⁺ and Ag⁺ destabilize MoS₂ nanosheet suspensions much more strongly than do their divalent and monovalent counterparts. This effect is attributable to Lewis soft acid-base interactions of cations with MoS₂. Visible light irradiation synergistically promotes the aggregation of SL-MoS₂ nanosheets in the presence of cations, which was evident even in the presence of natural organic matter. The light-accelerated aggregation was ascribed to dipole-dipole interactions due to transient surface plasmon oscillation of electrons in the metallic 1T phase, which decrease the aggregation energy barrier. These results reveal the phase-dependent aggregation behaviors of engineered MoS₂ nanosheets with important implications for environmental fate and risk.

Tuning magnetism at the two-dimensional limit: a theoretical perspective

The discovery of two-dimensional (2D) magnetic materials provides an ideal testbed for manipulating the magnetic properties at the atomically thin and 2D limit. This review gives recent progress in the emergent 2D magnets and heterostructures, focusing on the theory side. We summarize different theoretical models, ranging from the atomic to micrometer-scale, used to describe magnetic orders. Then, the current strategies for tuning magnetism in 2D materials are further discussed, such as electric field, magnetic field, strain, optics, chemical functionalization, and spin-orbit engineering. Finally, we conclude with the future challenges and opportunities for 2D magnetism.

Enhanced Charge Carrier Separation and Improved Biexciton Yield at the p-n Junction of SnSe/CdSe Heterostructures: A Detailed Electrochemical and Ultrafast Spectroscopic Investigation

Tin chalcogenides (SnX, X = S, Se)-based heterostructures (HSs) are promising materials for the construction of low-cost optoelectronic devices. Here, we report the synthesis of a SnSe/CdSe HS using the controlled cation exchange reaction. The (400) plane of SnSe and the (111) plane of CdSe confirm the formation of an interface between SnSe and CdSe. The Type I band alignment is estimated for the SnSe/CdSe HS with a small conduction band offset (CBO) of 0.72 eV through cyclic voltammetry measurements. Transient absorption (TA) studies demonstrate a drastic enhancement of the CdSe biexciton signal that points toward the hot carrier transfer from SnSe to CdSe in a short time scale. The fast growth and recovery of CdSe bleach in the presence of SnSe indicate charge transfer back to SnSe. The observed delocalization of carriers in these two systems is crucial for an optoelectronic device. Our findings provide new insights into the fabrication of cost-effective photovoltaic devices based on SnSe-based heterostructures.

Emerging properties of carbon based 2D material beyond graphene

Graphene turns out to be the pioneering material for setting up boulevard to a new zoo of recently proposed carbon based novel two dimensional (2D) analogues. It is evident that their electronic, optical and other related properties are utterly different from that of graphene because of the distinct intriguing morphology. For instance, the revolutionary emergence of Dirac cones in graphene is particularly hard to find in most of the other 2D materials. As a consequence the crystal symmetries indeed act as a major role for predicting electronic band structure. Since tight binding calculations have become an indispensable tool in electronic band structure calculation, we indicate the implication of such method in graphene's allotropes beyond hexagonal symmetry. It is to be noted that some of these graphene allotropes successfully overcome the inherent drawback of the zero band gap nature of graphene. As a result, these 2D nanomaterials exhibit great potential in a broad spectrum of applications, viz nanoelectronics, nanooptics, gas sensors, gas storages, catalysis, and other specific applications. The miniaturization of high performance graphene allotrope based gas sensors to microscopic or even nanosized range has also been critically discussed. In addition, various optical properties like the dielectric functions, optical conductivity, electron energy loss spectra reveal that these systems can be used in opto-electronic devices. Nonetheless, the honeycomb lattice of graphene is not superconducting. However, it is proposed that the tetragonal form of graphene can be intruded to form new hybrid 2D materials to achieve novel superconducting device at attainable conditions. These dynamic experimental prospects demand further functionalization of these systems to enhance the efficiency and the field of multifunctionality. This topical review aims to highlight the latest advances in carbon based 2D materials beyond graphene from the basic theoretical as well as future application perspectives.