An all-optical, non-volatile, bidirectional, phase-change meta-switch

Pushing Radiative Cooling Technology to Real Applications

Radiative cooling is achieved by controlling surface optical behavior toward solar and thermal radiation, offering promising solutions for mitigating global warming, promoting energy saving, and enhancing environmental protection. Despite significant efforts to develop optical surfaces in various forms, five primary challenges remain for practical applications: enhancing optical efficiency, maintaining appearance, managing overcooling, improving durability, and enabling scalable manufacturing. However, a comprehensive review bridging these gaps is currently lacking. This work begins by introducing the optical fundamentals of radiative cooling and its potential applications. It then explores the challenges and discusses advanced solutions through structural design, material selection, and fabrication processes. It aims to provide guidance for future research and industrial development of radiative cooling technology.

Reconfigurable Micro/Nano-Optical Devices Based on Phase Transitions: From Materials, Mechanisms to Applications

In recent years, numerous efforts have been devoted to exploring innovative micro/nano-optical devices (MNODs) with reconfigurable functionality, which is highly significant because of the progressively increasing requirements for next-generation photonic systems. Fortunately, phase change materials (PCMs) provide an extremely competitive pathway to achieve this goal. The phase transitions induce significant changes to materials in optical, electrical properties or shapes, triggering great research interests in applying PCMs to reconfigurable micro/nano-optical devices (RMNODs). More specifically, the PCMs-based RMNODs can interact with incident light in on-demand or adaptive manners and thus realize unique functions. In this review, RMNODs based on phase transitions are systematically summarized and comprehensively overviewed from materials, phase change mechanisms to applications. The reconfigurable optical devices consisting of three kinds of typical PCMs are emphatically introduced, including chalcogenides, transition metal oxides, and shape memory alloys, highlighting the reversible state switch and dramatic contrast of optical responses along with designated utilities generated by phase transition. Finally, a comprehensive summary of the whole content is given, discussing the challenge and outlooking the potential development of the PCMs-based RMNODs in the future.

Study on the Sodium-Doped Titania Interface-Type Memristor

Memristors integrated into a crossbar-array architecture (CAA) are promising candidates for analog in-memory computing accelerators. However, the relatively low reliability of the memristor device and sneak current issues in CAA remain the main obstacles. Alkali ion-based interface-type memristors are promising solutions for implementing highly reliable memristor devices and neuromorphic hardware. This interface-type device benefits from self-rectifying and forming-free resistive switching (RS), and exhibits relatively low variation from device to device and cycle to cycle. In a previous report, we introduced an in situ grown Na/TiO2 memristor using atomic layer deposition (ALD) and proposed a RS mechanism from experimentally measured Schottky barrier modulation. Self-rectifying RS characteristics were observed by the asymmetric distribution of Na dopants and oxygen vacancies as the Ti metal used as the adhesion layer for the bottom electrode diffuses over the Pt electrode at 250 °C during the ALD process and is doped into the TiO2 layer. Here, we theoretically verify the modulation of the Schottky barrier at the TiO2/Pt electrode interface by Na ions. This study fabricated a Pt/Na/TiO2/Pt memristor device and confirmed its self-rectifying RS characteristics and stable retention characteristics for 24 h at 85 °C. Additionally, this device exhibited relative standard deviations of 27 and 7% in the high and low resistance states, respectively, in terms of cycle-to-cycle variation. To verify the RS mechanism, we conducted density functional theory simulations to analyze the impact of Na cations at interstitial sites on the Schottky barrier. Our findings can contribute to both fundamental understanding and the design of high-performance memristor devices for neuromorphic computing.

Spatial Writing of Ultrafast All-Optical Switching

Writing spatial information on ultrafast all-optical switching is essential for constructing ultrafast processing units in photonic applications, such as optical communication and computing networks. However, most methods ignore the fabrication and imaging of controllable switching area, limiting its spatial information and the further design in ultrafast devices. Here, we propose a method to spatially write in ultrafast all-optical switching based on MAPbI3 perovskite with nanocone structure and visualize the switching effect in arbitrary designed area. Due to the light confinement effect of nanocone fabrication using a fs laser, the light is strongly absorbed by perovskite and reach saturable absorption. It leads to ultrafast broadband transmittance change with 25 fs switching time and 10% modulation depth in nanocone perovskite area. Our preparation method offers high efficiency, performance, and flexibility for the spatial writing of ultrafast all-optical switching, which is promising for developing ultrafast all-optical networks and the next generation of communication technology.

Active Property-Structure Integrated Reconfiguration of Individual Resonant Nanoparticles

Property-structure reconfigurable nanoparticles (NPs) provide additional flexibility for effectively and flexibly manipulating light at the nanoscale. This has facilitated the development of various multifunctional and high-performance nanophotonic devices. Resonant NPs based on dielectric active materials, especially phase change materials, are particularly promising for achieving reconfigurability. However, the on-demand control of the properties, especially the morphology, in individual dielectric resonant NP remains a significant challenge. In this study, we present an all-optical approach for one-step fabrication of Ge2Sb2Te5 (GST) hemispherical NPs, integrated active reversible phase-state switching, and morphology reshaping. Reversible optical switching is demonstrated, attributed to reversible phase-state changes, along with unidirectional modifications to their scattering intensity resulting from morphology reshaping. This novel technology allows the precise adjustment of each structural pixel without affecting the overall functionality of the switchable nanophotonic device. It is highly suitable for applications in single-pixel-addressable active optical devices, structural color displays, and information storage, among others.

Phase-Change Memory from Molecular Tellurides

Phase-change memory (PCM) is an emerging memory technology based on the resistance contrast between the crystalline and amorphous states of a material. Further development and realization of PCM as a mainstream memory technology rely on innovative materials and inexpensive fabrication methods. Here, we propose a generalizable and scalable solution-processing approach to synthesize phase-change telluride inks in order to meet demands for high-throughput material screening, increased energy efficiency, and advanced device architectures. Bulk tellurides, such as Sb2Te3, GeTe, Sc2Te3, and TiTe2, are dissolved and purified to obtain inks of molecular metal telluride complexes. This allowed us to unlock a wide range of solution-processed ternary tellurides by the simple mixing of binary inks. We demonstrate accurate and quantitative composition control, including prototype materials (Ge-Sb-Te) and emerging rare-earth-metal telluride-doped materials (Sc-Sb-Te). Spin-coating and annealing convert ink formulations into high-quality, phase-pure telluride films with preferred orientation along the (00l) direction. Deposition engineering of liquid tellurides enables thickness-tunable films, infilling of nanoscale vias, and film preparation on flexible substrates. Finally, we demonstrate cyclable and non-volatile prototype memory devices, achieving performance indicators such as resistance contrast and low reset energy on par with state-of-the-art sputtered PCM layers.

Freeform direct-write and rewritable photonic integrated circuits in phase-change thin films

Photonic integrated circuits (PICs) with rapid prototyping and reprogramming capabilities promise revolutionary impacts on a plethora of photonic technologies. We report direct-write and rewritable photonic circuits on a low-loss phase-change material (PCM) thin film. Complete end-to-end PICs are directly laser-written in one step without additional fabrication processes, and any part of the circuit can be erased and rewritten, facilitating rapid design modification. We demonstrate the versatility of this technique for diverse applications, including an optical interconnect fabric for reconfigurable networking, a photonic crossbar array for optical computing, and a tunable optical filter for optical signal processing. By combining the programmability of the direct laser writing technique with PCM, our technique unlocks opportunities for programmable photonic networking, computing, and signal processing. Moreover, the rewritable photonic circuits enable rapid prototyping and testing in a convenient and cost-efficient manner, eliminate the need for nanofabrication facilities, and thus promote the proliferation of photonics research and education to a broader community.

Ultracompact Single-Photon Sources of Linearly Polarized Vortex Beams

Ultracompact chip-integrated single-photon sources of collimated beams with polarization-encoded states are crucial for integrated quantum technologies. However, most of currently available single-photon sources rely on external bulky optical components to shape the polarization and phase front of emitted photon beams. Efficient integration of quantum emitters with beam shaping and polarization encoding functionalities remains so far elusive. Here, ultracompact single-photon sources of linearly polarized vortex beams based on chip-integrated quantum emitter-coupled metasurfaces are presented, which are meticulously designed by fully exploiting the potential of nanobrick-arrayed metasurfaces. The authors first demonstrate on-chip single-photon generation of high-purity linearly polarized vortex beams with prescribed topological charges of 0, - 1, and +1. The multiplexing of single-photon emission channels with orthogonal linear polarizations carrying different topological charges are further realized and their entanglement is demonstarated. The work illustrates the potential and feasibility of ultracompact quantum emitter-coupled metasurfaces as a new quantum optics platform for realizing chip-integrated high-dimensional single-photon sources.

Infrared Resonance Tuning of Nanoslit Antennas with Phase-Change Materials

Phase-change materials (PCMs) have been established as prime candidates for nonvolatile resonance tuning of nanophotonic components based on a large optical contrast between their amorphous and crystalline states. Recently, the plasmonic PCM In3SbTe2 was introduced, which can be switched from an amorphous dielectric state to a crystalline metallic one over the entire infrared spectral range. While locally switching the PCM around metallic nanorod antennas has already been demonstrated, similar tuning of inverse antenna structures (nanoslits) has not yet been investigated. Here, we demonstrate optical resonance tuning of nanoslit antennas with dielectric and plasmonic PCMs. We compare two geometries with fundamentally different resonance tuning mechanisms: tuning the resonance of aluminum slit antennas by change of the refractive index (dielectric PCM Ge3Sb2Te6), and creating slit-like volumes of amorphous In3SbTe2 and modifying the slit geometry directly (plasmonic PCM In3SbTe2). While the tuning range with the plasmonic PCM is about 3.4 μm and only limited by fabrication, the resonances with the dielectric PCM feature a three times larger quality factor compared to resonances obtained with the plasmonic PCM.

Realization of a photoswitchable anapole metasurface based on phase change material Ge2Sb2Te5

The electromagnetic anapole mode originates from the phase cancellation interference between the far-field radiation of an oscillating electric dipole moment and toroidal dipole moment, which presents a radiation-free state of light while enhancing the near-field, and has potential applications in micro- and nanophotonics. The active control of the anapole is crucial for the design and realization of tunable photonic devices. In this paper, we realize dynamic tuning of an anapole metasurface and metasurface optical switching based on the phase change material G e 2 S b 2 T e 5 (GST). By utilizing the destructive interference of the electric dipole moment and ring dipole moment, we design the non-radiative anapole mode. At the same time, we introduce the phase change material GST to dynamically regulate the intensity and position of the far-field scattering, electric field, and transmission spectra, and to realize the transition from anapole mode to electric dipole mode. At the same time, the modulation of the transmission spectrum by the metasurface after the addition of GST film is achieved. A relative transmission modulation of 640.62% is achieved. Our study provides ideas for realizing effective active modulation of active micro- and nanophotonic devices, and promotes active modulation of active micro- and nanophotonic devices in lasers and filters and potential applications in dynamic near-field imaging.

Broadband and strength-switchable circular dichroism in a Ge2Sb2Te5-based metasurface

Circular dichroism (CD) is highly required in the applications of biological detection and analytical chemistry. In this paper, we achieved a giant, broadband, and strength-switchable CD effect in a quadruple z-shaped G e 2 S b 2 T e 5 (GST) metasurface. At the amorphous state of GST (a-GST), the giant CD reaches 0.92 and the width of the absorption >0.80 is about 100 nm. The giant and broadband CD originates from polarization selective excitations of Mie resonances and the coupling between subunit resonators. With the transition from a-GST to crystalline GST, CD could be dynamically switched from 0.92 to 0.05. The GST-based metasurfaces with giant and wide-range switching CD will promote the development of active chiral devices.

Roadmap for phase change materials in photonics and beyond

Phase Change Materials (PCMs) have demonstrated tremendous potential as a platform for achieving diverse functionalities in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum, ranging from terahertz to visible frequencies. This comprehensive roadmap reviews the material and device aspects of PCMs, and their diverse applications in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum. It discusses various device configurations and optimization techniques, including deep learning-based metasurface design. The integration of PCMs with Photonic Integrated Circuits and advanced electric-driven PCMs are explored. PCMs hold great promise for multifunctional device development, including applications in non-volatile memory, optical data storage, photonics, energy harvesting, biomedical technology, neuromorphic computing, thermal management, and flexible electronics.

Time-Resolved Temperature Mapping Leveraging the Strong Thermo-Optic Effect in Phase-Change Materials

Optical phase-change materials are highly promising for emerging applications such as tunable metasurfaces, reconfigurable photonic circuits, and non-von Neumann computing. However, these materials typically require both high melting temperatures and fast quenching rates to reversibly switch between their crystalline and amorphous phases: a significant challenge for large-scale integration. In this work, we use temperature-dependent ellipsometry to study the thermo-optic effect in GST and use these results to demonstrate an experimental technique that leverages the thermo-optic effect in GST to enable both spatial and temporal thermal measurements of two common electro-thermal microheater designs currently used by the phase-change community. Our approach shows excellent agreement between experimental results and numerical simulations and provides a noninvasive method for rapid characterization of electrically programmable phase-change devices.

Enhanced far-field coherent thermal emission using mid-infrared bilayer metasurfaces

A classical thermal source, such as an incandescent filament, radiates according to Planck's law. The feasibility of super-Planckian radiation has been investigated with sub-wavelength-sized sources in the last decade. In such sources, a crystal-dependent coupling of photons and optical phonons is possible at thermal energies corresponding to that at room temperature. This interaction can be used to tailor the far-field thermal emission in a coherent manner; however, understanding heat transfer during this process is still nascent. Here, we used a novel measurement platform to quantify thermal signals in a Ge2Sb2Te5/SiO2 nanoribbon structure. We were able to separate and quantify the radiated and conducted heat transfer mechanisms. The thermal emission from the Ge2Sb2Te5/SiO2 nanoribbons was enhanced by 3.5× compared to that of a bare SiO2 nanoribbon. Our model revealed that this enhancement was directly due to polaritonic heat transfer, which was possible due to the large and lossless dielectric permittivity of Ge2Sb2Te5 at mid-IR frequencies. This study directly probes the far-field emission with a thermal gradient stimulated by Joule heating in temperature ranges from 100 to 400 K, which bridges the gap between mid-IR optics and thermal engineering.

Review: tunable nanophotonic metastructures

Tunable nanophotonic metastructures offer new capabilities in computing, networking, and imaging by providing reconfigurability in computer interconnect topologies, new optical information processing capabilities, optical network switching, and image processing. Depending on the materials and the nanostructures employed in the nanophotonic metastructure devices, various tuning mechanisms can be employed. They include thermo-optical, electro-optical (e.g. Pockels and Kerr effects), magneto-optical, ionic-optical, piezo-optical, mechano-optical (deformation in MEMS or NEMS), and phase-change mechanisms. Such mechanisms can alter the real and/or imaginary parts of the optical susceptibility tensors, leading to tuning of the optical characteristics. In particular, tunable nanophotonic metastructures with relatively large tuning strengths (e.g. large changes in the refractive index) can lead to particularly useful device applications. This paper reviews various tunable nanophotonic metastructures' tuning mechanisms, tuning characteristics, tuning speeds, and non-volatility. Among the reviewed tunable nanophotonic metastructures, some of the phase-change-mechanisms offer relatively large index change magnitude while offering non-volatility. In particular, Ge-Sb-Se-Te (GSST) and vanadium dioxide (VO2) materials are popular for this reason. Mechanically tunable nanophotonic metastructures offer relatively small changes in the optical losses while offering large index changes. Electro-optically tunable nanophotonic metastructures offer relatively fast tuning speeds while achieving relatively small index changes. Thermo-optically tunable nanophotonic metastructures offer nearly zero changes in optical losses while realizing modest changes in optical index at the expense of relatively large power consumption. Magneto-optically tunable nanophotonic metastructures offer non-reciprocal optical index changes that can be induced by changing the magnetic field strengths or directions. Tunable nanophotonic metastructures can find a very wide range of applications including imaging, computing, communications, and sensing. Practical commercial deployments of these technologies will require scalable, repeatable, and high-yield manufacturing. Most of these technology demonstrations required specialized nanofabrication tools such as e-beam lithography on relatively small fractional areas of semiconductor wafers, however, with advanced CMOS fabrication and heterogeneous integration techniques deployed for photonics, scalable and practical wafer-scale fabrication of tunable nanophotonic metastructures should be on the horizon, driven by strong interests from multiple application areas.

Engineering the temporal dynamics of all-optical switching with fast and slow materials

All-optical switches control the amplitude, phase, and polarization of light using optical control pulses. They can operate at ultrafast timescales - essential for technology-driven applications like optical computing, and fundamental studies like time-reflection. Conventional all-optical switches have a fixed switching time, but this work demonstrates that the response-time can be controlled by selectively controlling the light-matter-interaction in so-called fast and slow materials. The bi-material switch has a nanosecond response when the probe interacts strongly with titanium nitride near its epsilon-near-zero (ENZ) wavelength. The response-time speeds up over two orders of magnitude with increasing probe-wavelength, as light's interaction with the faster Aluminum-doped zinc oxide (AZO) increases, eventually reaching the picosecond-scale near AZO's ENZ-regime. This scheme provides several additional degrees of freedom for switching time control, such as probe-polarization and incident angle, and the pump-wavelength. This approach could lead to new functionalities within key applications in multiband transmission, optical computing, and nonlinear optics.

Neuromorphic Photonic Memory Devices Using Ultrafast, Non-Volatile Phase-Change Materials

The search for ultrafast photonic memory devices is inspired by the ever-increasing number of cloud-computing, supercomputing, and artificial-intelligence applications, together with the unique advantages of signal processing in the optical domain such as high speed, large bandwidth, and low energy consumption. By embracing silicon photonics with chalcogenide phase-change materials (PCMs), non-volatile integrated photonic memory is developed with promising potential in photonic integrated circuits and nanophotonic applications. While conventional PCMs suffer from slow crystallization speed, scandium-doped antimony telluride (SST) has been recently developed for ultrafast phase-change random-access memory applications. An ultrafast non-volatile photonic memory based on an SST thin film with a 2 ns write/erase speed is demonstrated, which is the fastest write/erase speed ever reported in integrated phase-change photonic devices. SST-based photonic memories exhibit multilevel capabilities and good stability at room temperature. By mapping the memory level to the biological synapse weight, an artificial neural network based on photonic memory devices is successfully established for image classification. Additionally, a reflective nanodisplay application using SST with optoelectronic modulation capabilities is demonstrated. Both the optical and electrical changes in SST during the phase transition and the fast-switching speed demonstrate their potential for use in photonic computing, neuromorphic computing, nanophotonics, and optoelectronic applications.

Low-Loss Plasmonics with Nanostructured Potassium and Sodium-Potassium Liquid Alloys

Alkali metals have low optical losses in the visible to near-infrared (NIR) compared with noble metals. However, their high reactivity prohibits the exploration of their optical properties. Recently sodium (Na) has been experimentally demonstrated as a low-loss plasmonic material. Here we report on a thermo-assisted nanoscale embossing (TANE) technique for fabricating plasmonic nanostructures from pure potassium (K) and NaK liquid alloys. We show high-quality-factor resonances from K as narrow as 15 nm in the NIR, which we attribute to the high material quality and low optical loss. We further demonstrate liquid Na-K plasmonics by exploiting the Na-K eutectic phase diagram. Our study expands the material library for alkali metal plasmonics and liquid plasmonics, potentially enabling a range of new material platforms for active metamaterials and photonic devices.

Wavelength-tunable infrared chiral metasurfaces with phase-change materials

Optical phase-change materials exhibit tunable permittivity and switching properties during phase transition, which offers the possibility of dynamic control of optical devices. Here, a wavelength-tunable infrared chiral metasurface integrated with phase-change material GST-225 is demonstrated with the designed unit cell of parallelogram-shaped resonator. By varying the baking time at a temperature above the phase transition temperature of GST-225, the resonance wavelength of the chiral metasurface is tuned in the wavelength range of 2.33 µm to 2.58 µm, while the circular dichroism in absorption is maintained around 0.44. The chiroptical response of the designed metasurface is revealed by analyzing the electromagnetic field and displacement current distributions under left- and right-handed circularly polarized (LCP and RCP) light illumination. Moreover, the photothermal effect is simulated to investigate the large temperature difference in the chiral metasurface under LCP and RCP illumination, which allows for the possibility of circular polarization-controlled phase transition. The presented chiral metasurfaces with phase-change materials offer the potential to facilitate promising applications in the infrared regime, such as chiral thermal switching, infrared imaging, and tunable chiral photonics.

Achieving Photonic Spin Hall Effect, Spin-Selective Absorption, and Beam Deflection with a Vanadium Dioxide Metasurface

Metasurface-based research with phase-change materials has been a prominent and rapidly developing research field that has drawn considerable attention in recent years. In this paper, we proposed a kind of tunable metasurface based on the simplest metal-insulator-metal structure, which can be realized by the mutual transformation of insulating and metallic states of vanadium dioxide (VO₂) and can realize the functional switching of photonic spin Hall effect (PSHE), absorption and beam deflection at the same terahertz frequency. When VO₂ is insulating, combined with the geometric phase, the metasurface can realize PSHE. A normal incident linear polarized wave will be split into two spin-polarized reflection beams traveling in two off-normal directions. When VO₂ is in the metal state, the designed metasurface can be used as a wave absorber and a deflector, which will completely absorb LCP waves, while the reflected amplitude of RCP waves is 0.828 and deflects. Our design only consists of one layer of artificial structure with two materials and is easy to realize in the experiment compared with the metasurface of a multi-layer structure, which can provide new ideas for the research of tunable multifunctional metasurface.

Microwatt Volatile Optical Bistability via Nanomechanical Nonlinearity

Metastable optically controlled devices (optical flip-flops) are needed in data storage, signal processing, and displays. Although nonvolatile memory relying on phase transitions in chalcogenide glasses has been widely used for optical data storage, beyond that, weak optical nonlinearities have hindered the development of low-power bistable devices. This work reports a new type of volatile optical bistability in a hybrid nano-optomechanical device, comprising a pair of anchored nanowires decorated with plasmonic metamolecules. The nonlinearity and bistability reside in the mechanical properties of the acoustically driven nanowires and are transduced to the optical response by reconfiguring the plasmonic metamolecules. The device can be switched between bistable optical states with microwatts of optical power and its volatile memory can be erased by removing the acoustic signal. The demonstration of hybrid nano-optomechanical bistability opens new opportunities to develop low-power optical bistable devices.

Phase-change materials based on amorphous equichalcogenides

Phase-change materials, demonstrating a rapid switching between two distinct states with a sharp contrast in electrical, optical or magnetic properties, are vital for modern photonic and electronic devices. To date, this effect is observed in chalcogenide compounds based on Se, Te or both, and most recently in stoichiometric Sb₂S₃ composition. Yet, to achieve best integrability into modern photonics and electronics, the mixed S/Se/Te phase change medium is needed, which would allow a wide tuning range for such important physical properties as vitreous phase stability, radiation and photo-sensitivity, optical gap, electrical and thermal conductivity, non-linear optical effects, as well as the possibility of structural modification at nanoscale. In this work, a thermally-induced high-to-low resistivity switching below 200 °C is demonstrated in Sb-rich equichalcogenides (containing S, Se and Te in equal proportions). The nanoscale mechanism is associated with interchange between tetrahedral and octahedral coordination of Ge and Sb atoms, substitution of Te in the nearest Ge environment by S or Se, and Sb-Ge/Sb bonds formation upon further annealing. The material can be integrated into chalcogenide-based multifunctional platforms, neuromorphic computational systems, photonic devices and sensors.

Varifocal Metalens Using Tunable and Ultralow-loss Dielectrics

The field of flat optics that uses nanostructured, so-called metasurfaces, has seen remarkable progress over the last decade. Chalcogenide phase-change materials (PCMs) offer a promising platform for realizing reconfigurable metasurfaces, as their optical properties can be reversibly tuned. Yet, demonstrations of phase-change metalenses to date have employed material compositions such as Ge2 Sb2 Te5 , which show high absorption in the visible to near-IR wavelengths particularly in their crystalline state, limiting the applicability. Here, by using a low-loss PCM Sb2 Se3 , for the first time, active polarization-insensitive phase-change metalenses at near-IR wavelengths with comparable efficiencies in both material states are shown. An active metalens with a tunable focusing intensity of 95% and a focusing efficiency of 23% is demonstrated. A varifocal metalens is then demonstrated with a tunable focal length from 41 to 123 µm with comparable focusing efficiency (5.7% and 3%). The ultralow-loss nature of the material introduces exciting new possibilities for optical communications, multi-depth imaging, beam steering, optical routing, and holography.

Phase change metamaterial for tunable infrared stealth and camouflage

In the paper, a type of phase change metamaterial for tunable infrared stealth and camouflage is proposed and numerically studied. The metamaterial combines high temperature resistant metal Mo with phase-changing material GST and can be switched between the infrared "stealthy" and "non-stealthy" states through the phase change process of the GST. At the amorphous state of GST, there is a high absorption peak at the atmospheric absorption spectral range, which can achieve infrared stealth in the atmospheric window together with good radiative heat dissipation in the non-atmospheric window. While at the crystalline state of GST, the absorption peak becomes broader and exhibits high absorption in the long-wave infrared atmospheric window, leading to a "non-stealthy" state. The relationship between the infrared stealth performance of the structure with the polarization and incident angle of the incident light is also studied in detail. The proposed infrared stealth metamaterial employs a simple multilayer structure and could be fabricated in large scale. Our work will promote the research of dynamically tunable, large scale phase change metamaterials for infrared stealth as well as energy and other applications.

Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware

To implement artificial neural networks (ANNs) based on memristor devices, it is essential to secure the linearity and symmetry in weight update characteristics of the memristor, and reliability in the cycle-to-cycle and device-to-device variations. This study experimentally demonstrated and compared the filamentary and interface-type resistive switching (RS) behaviors of tantalum oxide (Ta₂O₅ and TaO₂)-based devices grown by atomic layer deposition (ALD) to propose a suitable RS type in terms of reliability and weight update characteristics. Although Ta₂O₅ is a strong candidate for memristor, the filament-type RS behavior of Ta₂O₅ does not fit well with ANNs demanding analog memory characteristics. Therefore, this study newly designed an interface-type TaO₂ memristor and compared it to a filament type of Ta₂O₅ memristor to secure the weight update characteristics and reliability. The TaO₂-based interface-type memristor exhibited gradual RS characteristics and area dependency in both high- and low-resistance states. In addition, compared to the filamentary memristor, the RS behaviors of the TaO₂-based interface-type device exhibited higher suitability for the neuromorphic, symmetric, and linear long-term potentiation (LTP) and long-term depression (LTD). These findings suggest better types of memristors for implementing ionic memristor-based ANNs among the two types of RS mechanisms.

Ultrafast Dynamics of Different Phase States Ge2Sb2Te5 Film Induced by a Femtosecond Laser Pulse Irradiation

A femtosecond laser could realize a high transition rate of the phase change material (PCM), and the properties of the amorphous and the crystalline Ge₂Sb₂Te₅ (GST) induced by a femtosecond laser were studied, which was one of the candidates among the PCMs. However, the characteristics of the intermediate phase states in reversible phase transitions were also important and helpful to explore the mechanisms of the phase transitions. In this paper, the ultrafast dynamics of amorphous, crystalline face-centered-cubic (FCC), and hexagonal-close-packed (HCP) states were investigated using a femtosecond laser pulse excitation through a reflective-type pump-probe technique, obtained by annealing at certain temperatures, and verified using X-ray diffraction (XRD) and the Raman spectrum. It was found that as the annealing temperature increased, the electron of the GST films could be excited more easily, while the ablation threshold decreased. Due to annealing, the structure of bonding was changed for different phase states, which resulted in the decrease in the band gap of the films. In addition, it was hard for the intermediate state films to transit to the amorphous structure state via the femtosecond laser, and the crystallization would be enhanced, while the crystalline HCP structures of GST could be directly and easily changed to the amorphous state by a pulse, which resulted from the non-thermal phase change caused by the excited electron.

VO2-based superposed Fabry-Perot multilayer film with a highly enhanced infrared emittance and emittance tunability for spacecraft thermal control

Thermal control coating for spacecraft based on thermochromic film attracts increasing interest due to their ability of self-adaptive emittance switch and less resource consuming compared with traditional thermal control coatings. However, practical applications of thermochromic film for spacecraft are constrained by the low infrared emittance at a high temperature and narrow emittance tunability. In this work, a thermochromic film with simple structure, nearly perfect infrared emission and large emittance tunability is proposed for the application of spacecraft thermal control. The thermochromic film is a VO₂-based superposed Fabry-Perot (FP) multilayer film, which is constructed by encapsulating three thin VO₂ layers in four lossless BaF₂ spacer on the Al substrate. The infrared emittance and emittance tunability of the superposed FP film is dramatically enhanced by the three superposed VO₂-BaF₂-Al FP resonances at wavelengths of 9, 15 and 20 µm, respectively. For VO₂ layers under metallic state, the spectral normal emittance of the superposed FP film is close to unity in the entire mid-infrared spectral range, while for VO₂ layers under dielectric state, the film is highly reflective. For the typical growth techniques of the VO₂ layers considered here, the emittance tunability of the superposed FP film can exceed 0.70 with total normal emittance larger than 0.91 at high temperature, simultaneously. The largest total normal emittance of the superposed FP film can reach 0.95 with emittance tunability of 0.78. In addition, the infrared emission and emittance tunability performances of the superposed FP film remain excellent for incident angles up to 60°. This work proposes a simple structure with highly enhanced infrared emittance and emittance tunability that outperforms the existing thermochromic films, which could accelerate the application of thermochromic films in the field of spacecraft thermal control.

Light-driven single-cell rotational adhesion frequency assay

The interaction between cell surface receptors and extracellular ligands is highly related to many physiological processes in living systems. Many techniques have been developed to measure the ligand-receptor binding kinetics at the single-cell level. However, few techniques can measure the physiologically relevant shear binding affinity over a single cell in the clinical environment. Here, we develop a new optical technique, termed single-cell rotational adhesion frequency assay (scRAFA), that mimics in vivo cell adhesion to achieve label-free determination of both homogeneous and heterogeneous binding kinetics of targeted cells at the subcellular level. Moreover, the scRAFA is also applicable to analyze the binding affinities on a single cell in native human biofluids. With its superior performance and general applicability, scRAFA is expected to find applications in study of the spatial organization of cell surface receptors and diagnosis of infectious diseases.

SUPPLEMENTARY INFORMATION

The online version contains supplementary material available at 10.1186/s43593-022-00020-4.

Terahertz multi-level nonvolatile optically rewritable encryption memory based on chalcogenide phase-change materials

Fast and efficient information processing and encryption, including writing, reading, and encryption memory, is essential for upcoming terahertz (THz) communications and information encryption. Here, we demonstrate a THz multi-level, nonvolatile, optically rewritable memory and encryption memory based on chalcogenide phase-change materials, Ge₂Sb₂Te₅ (GST). By tuning the laser fluence irradiated on GST, we experimentally achieve multiple intermediate states and large-area amorphization with a diameter of centimeter-level in the THz regime. Our memory unit features a high operating speed of up to 4 ns, excellent reproducibility, and long-term stability. Utilizing this approach, hexadecimal coding information memories are implemented, and multiple writing-erasing tests are successfully carried out in the same active area. Finally, terahertz photoprint memory is demonstrated, verifying the feasibility of lithography-free devices. The demonstration suggests a practical way to protect and store information and paves a new avenue toward nonvolatile active THz devices.

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Multiple intermediate states and large-area amorphization of GST in the THz regime

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4-ns operating speed, excellent reproducibility, and long-term stability

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Multiple writing-erasing tests on hexadecimal coding information memories

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THz photoprint memory and encryption memory

Enhanced circular dichroism in Ge2Sb2Te5-loaded metasurface

Circular dichroism (CD) is originally obtained from three-dimensional spiral structures by simultaneously exciting electric and magnetic resonances. To simplify construction, multilayer stacked asymmetric structures and the symmetric structures relying on oblique incidence are proposed for enhancing CD. Herein, we achieved the enhancement of dual-waveband CD by adding a Ge₂Sb₂Te₅ (GST) layer on the top of a Z-shape gold array in a normally incident system. Benefited from the polarization selective excitations of electric and magnetic dipole resonances, the CD in a simple planar structure is immensely enhanced from near zero to 0.73 at 1.58 µm. Furthermore, the CD strengths is dynamically tuned by controlling the phase of GST. With the GST phase transition from amorphous (a-GST) to crystalline state (c-GST), CD magnitudes are switched by about 0.73 and 0.27 at dual wavebands respectively. The enhancement of CD by adding a layer on a simple planar array offers a new method for designing planar metasurfaces with strong chirality.

Enabling Active Nanotechnologies by Phase Transition: From Electronics, Photonics to Thermotics

Phase transitions can occur in certain materials such as transition metal oxides (TMOs) and chalcogenides when there is a change in external conditions such as temperature and pressure. Along with phase transitions in these phase change materials (PCMs) come dramatic contrasts in various physical properties, which can be engineered to manipulate electrons, photons, polaritons, and phonons at the nanoscale, offering new opportunities for reconfigurable, active nanodevices. In this review, we particularly discuss phase-transition-enabled active nanotechnologies in nonvolatile electrical memory, tunable metamaterials, and metasurfaces for manipulation of both free-space photons and in-plane polaritons, and multifunctional emissivity control in the infrared (IR) spectrum. The fundamentals of PCMs are first introduced to explain the origins and principles of phase transitions. Thereafter, we discuss multiphysical nanodevices for electronic, photonic, and thermal management, attesting to the broad applications and exciting promises of PCMs. Emerging trends and valuable applications in all-optical neuromorphic devices, thermal data storage, and encryption are outlined in the end.

Reflective Terahertz Metasurfaces Based on Non-Volatile Phase Change Material for Switchable Manipulation

Recently, metasurfaces have been investigated and exploited for various applications in the THz regime, including modulators and detectors. However, the responsive properties of the metasurface in THz stay fixed once the fabrication process is complete. This limitation can be modified when integrating the phase change material (PCM), whose states are switchable between crystalline and amorphous, into the metasurface structure. This characteristic of the PCM is appealing in achieving dynamic and customizable functionality. In this work, the reflective metasurface structure is designed as a hexagonal unit deposited on a polyimide substrate. The non-volatile PCM chosen for the numerical study is germanium antimony tellurium (GST). Our proposed phase change metasurface provides two resonant frequencies located at 1.72 and 2.70 THz, respectively; one of them shows a high contrast of reflectivity at almost 80%. The effects of geometrical parameters, incident angles, and polarization modes on the properties of the proposed structure are explored. Finally, the performances of the structure are evaluated in terms of the insertion loss and extinction ratio.

Humidity-Controlled Tunable Emission in a Dye-Incorporated Metal-Hydrogel-Metal Cavity

Actively controllable photoluminescence is potent for a wide variety of applications from biosensing and imaging to optoelectronic components. Traditionally, methods to achieve active emission control are limited due to complex fabrication processes or irreversible tuning. Here, we demonstrate active emission tuning, achieved by changing the ambient humidity in a fluorescent dye-containing hydrogel integrated into a metal-insulator-metal (MIM) system. Altering the overlapping region of the MIM cavity resonance and the absorption and emission spectra of the dye used is the underlying principle to achieving tunability of the emission. We first verify this by passive tuning of cavity resonance and further experimentally demonstrate active tuning in both air and aqueous environments. The proposed approach is reversible, easy to integrate, and spectrally scalable, thus providing opportunities for developing tunable photonic devices.

Spin-State Modulation in FeII -Based Hofmann-Type Coordination Polymers: From Molecules to Materials

Spin crossover complexes that reversibly interconvert between two stable states imitate a binary state of 0 and 1, delivering a promising possibility to address the data processing concept in smart materials. Thus, a comprehensive understanding of the modulation of magnetic transition between high spin and low spin and the factors responsible for stabilizing the spin states is an essential theme in modern materials design. In this context, the present review attempts to provide a concise outline of the design strategy employed at the molecular level for fine-tuning the spin-state switching in Fe^II -based Hofmann-type coordination polymers and their effects on the optical and magnetic response. In addition, development towards the nanoscale architectures of HCPs, i. e., in terms of nanoparticles and thin films, are emphasized to bridge the gap between the laboratory and reality.

Tunable Infrared Detection, Radiative Cooling and Infrared-Laser Compatible Camouflage Based on a Multifunctional Nanostructure with Phase-Change Material

The nanostructure composed of nanomaterials and subwavelength units offers flexible design freedom and outstanding advantages over conventional devices. In this paper, a multifunctional nanostructure with phase-change material (PCM) is proposed to achieve tunable infrared detection, radiation cooling and infrared (IR)-laser compatible camouflage. The structure is very simple and is modified from the classic metal-dielectric-metal (MIM) multilayer film structure. We innovatively composed the top layer of metals with slits, and introduced a non-volatile PCM Ge₂Sb₂Te₅ (GST) for selective absorption/radiation regulation. According to the simulation results, wide-angle and polarization-insensitive dual-band infrared detection is realized in the four-layer structure. The transformation from infrared detection to infrared stealth is realized in the five-layer structure, and laser stealth is realized in the atmospheric window by electromagnetic absorption. Moreover, better radiation cooling is realized in the non-atmospheric window. The proposed device can achieve more than a 50% laser absorption rate at 10.6 μm while ensuring an average infrared emissivity below 20%. Compared with previous works, our proposed multifunctional nanostructures can realize multiple applications with a compact structure only by changing the temperature. Such ultra-thin, integratable and multifunctional nanostructures have great application prospects extending to various fields such as electromagnetic shielding, optical communication and sensing.

Beam steering at the nanosecond time scale with an atomically thin reflector

Techniques to mold the flow of light on subwavelength scales enable fundamentally new optical systems and device applications. The realization of programmable, active optical systems with fast, tunable components is among the outstanding challenges in the field. Here, we experimentally demonstrate a few-pixel beam steering device based on electrostatic gate control of excitons in an atomically thin semiconductor with strong light-matter interactions. By combining the high reflectivity of a MoSe₂ monolayer with a graphene split-gate geometry, we shape the wavefront phase profile to achieve continuously tunable beam deflection with a range of 10°, two-dimensional beam steering, and switching times down to 1.6 nanoseconds. Our approach opens the door for a new class of atomically thin optical systems, such as rapidly switchable beam arrays and quantum metasurfaces operating at their fundamental thickness limit.

Andersen et al. have demonstrated a new type of beam steering device based on the excitonic response of an atomically thin semiconductor. Using electrostatic gates, the authors achieved tunable steering with switching times on the nanosecond scale.

Multifunctional metasurfaces for switchable polarization selectivity and absorption

A multifunctional metasurface capable of dynamic control for polarization selectivity and absorption is proposed by controlling the phase of Ge₂Sb₂Te₅ (GST) in the near-infrared region. At amorphous state of GST (a-GST), the proposed GST strip array realized polarization selectivity in transmission-reflection integrated modes. The high-efficiency asymmetric transmission (AT = 0.92) and asymmetric reflection (AR = -0.82) are both obtained by selectively exciting Mie multipole resonances. With the transition from a-GST to crystalline (c-GST) state, the giant polarization selectivity almost disappeared, and the absorptions climb from < 0.1 to > 0.9. The maximum modulation depth reaches 94%. The mechanism of the dynamic switching between polarization selectivity and absorption is quantitively analyzed via multipole expansion. The GST based metasurfaces simultaneously possess excellent switchable capability for AT, AR, and absorption without refabricating structures, which is promising to the applications for next generation optical devices.

Terahertz switchable VO2-Au hybrid active metasurface holographic encryption

The combination of metasurface and holographic technology is the most cutting-edge development, but most of the proposed designs are static and do not allow active changes through external stimulation after fabrication, which takes only a limited part of the advantage provided by metasurface. Here, we propose and demonstrate a switchable hybrid active metasurface hologram in the terahertz (THz) regime composed of dynamic pixels (VO₂-CSRR) and static pixels (Au-CSRR) based on an intelligent algorithm, which can display some/all information in different temperature ranges. In particular, such performance shows excellent potential in the field of optical communication security, making it a promising candidate. To prove this possibility, we propose a scheme for optical information encryption/decryption and transmission, which takes metasurfaces as carriers of encrypted information and state/polarization/positions as the secret key components. Only when the two matches correctly can we get the hidden real information. The security of our proposed scheme has reached an unprecedented level, providing a new road for communication security.

All-optical switching based on plasmon-induced Enhancement of Index of Refraction

In quantum optical Enhancement of Index of Refraction (EIR), coherence and quantum interference render the atomic systems to exhibit orders of magnitude higher susceptibilities with vanishing or even negative absorption at their resonances. Here we show the plasmonic analogue of the quantum optical EIR effect in an optical system and further implement this in a linear all-optical switching mechanism. We realize plasmon-induced EIR using a particular plasmonic metasurface consisting of a square array of L-shaped meta-molecules. In contrast to the conventional methods, this approach provides a scheme to modulate the amplitude of incident signals by coherent control of absorption without implementing gain materials or nonlinear processes. Therefore, light is controlled by applying ultra-low intensity at the extreme levels of spatiotemporal localization. In the pursuit of potential applications of linear all-optical switching devices, this scheme may introduce an effective tool for improving the modulation strength of optical modulators and switches through the amplification of input signals at ultra-low power.

A Review of Optical Neural Networks

With the continuous miniaturization of conventional integrated circuits, obstacles such as excessive cost, increased resistance to electronic motion, and increased energy consumption are gradually slowing down the development of electrical computing and constraining the application of deep learning. Optical neuromorphic computing presents various opportunities and challenges compared with the realm of electronics. Algorithms running on optical hardware have the potential to meet the growing computational demands of deep learning and artificial intelligence. Here, we review the development of optical neural networks and compare various research proposals. We focus on fiber-based neural networks. Finally, we describe some new research directions and challenges.

Low-loss ultrafast and non-volatile all-optical switch enabled by all-dielectric phase change materials

All-optical switches show great potential to overcome the speed and power consumption limitations of electrical switching. Owing to its nonvolatile and superb cycle abilities, phase-change materials enabled all-optical switch (PC-AOS) is attracting much attention. However, realizing low-loss and ultrafast switching remains a challenge, because previous PC-AOS are mostly based on plasmonic metamaterials. The high thermal conductance of metallic materials disturbs the thermal accumulation for phase transition, and eventually decreases the switching speed to tens of nanoseconds. Here, we demonstrate an ultrafast switching (4.5 ps) and low-loss (2.8 dB) all-optical switch based on all-dielectric structure consisting of Ge₂Sb₂Te₅ and photonic crystals. Its switching speed is approximately ten thousand times faster than the plasmonic one. A 5.4 dB on-off ratio at 1550 nm has been experimentally achieved. We believe that the proposed all-dielectric optical switch will accelerate the progress of ultrafast and energy-efficient photonic devices and systems.

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All-dielectric phase change materials are used to achieve low loss all optical switch

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Only 15 nm phase change film is used for laser induced ultrafast switching

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Up to 7.4 dB switching contrast can be realized in the Near Infrared Spectrum

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Nano-hole array metasurface enables polarization insensitive optical filtering

Performance optimization of a metasurface incorporating non-volatile phase change material

Optical metasurface is a combination of manufactured periodic patterns of many artificial nanostructured unit cells, which can provide unique and attractive optical and electrical properties. Additionally, the function of the metasurface can be altered by adjusting the metasurface's size and configuration to satisfy a particular required property. However, once it is fabricated, such specific property is fixed and cannot be changed. Here, phase change material (PCM) can play an important role due to its two distinct states during the phase transition, referred to as amorphous and crystalline states, which exhibit significantly different refractive indices, particularly in the infrared wavelength. Therefore, a combination of metasurface with a phase change material may be attractive for achieving agile and tunable functions. In this paper, we numerically investigate an array of silicon cylinders with a thin PCM layer at their centers. The GST and GSST are the most well-known PCMs and were chosen for this study due to their non-volatile properties. This structure produces two resonant modes, magnetic dipole and electric dipole, at two different resonating wavelengths. We have numerically simulated the effect of cylinder's height and diameter on the reflecting profile, including the effect of thickness of the phase change material. Additionally, it is shown here that a superior performance can be achieved towards reduced insertion loss, enhanced extinction ratio, and increased figure of merit when a GST layer is replaced by a GSST layer.

Design and simulation of a GST-based metasurface with strong and switchable circular dichroism

Circular dichroism (CD) is required in the applications of biological detection, analytical chemistry, etc. Here, we numerically demonstrated large-range switchable CD by controlling the phase change of Ge₂Sb₂Te₅ (GST) in a zigzag array. At the amorphous state of GST (a-GST), the strong and dual-waveband CD effects are realized via the selective excitations of electric, magnetic, and toroidal resonances. With the transition from a-GST to crystalline state GST, CD strengths are tailored dynamically in large ranges. In detail, the CD magnitudes change by about 0.93 and the modulation depths exceed 94% at dual wavebands. The strong CD effects and large-range switch capability in the GST-based metasurfaces will boost the development of active chiroptical devices.

Active optical metasurfaces: comprehensive review on physics, mechanisms, and prospective applications

Optical metasurfaces with subwavelength thickness hold considerable promise for future advances in fundamental optics and novel optical applications due to their unprecedented ability to control the phase, amplitude, and polarization of transmitted, reflected, and diffracted light. Introducing active functionalities to optical metasurfaces is an essential step to the development of next-generation flat optical components and devices. During the last few years, many attempts have been made to develop tunable optical metasurfaces with dynamic control of optical properties (e.g., amplitude, phase, polarization, spatial/spectral/temporal responses) and early-stage device functions (e.g., beam steering, tunable focusing, tunable color filters/absorber, dynamic hologram, etc) based on a variety of novel active materials and tunable mechanisms. These recently-developed active metasurfaces show significant promise for practical applications, but significant challenges still remain. In this review, a comprehensive overview of recently-reported tunable metasurfaces is provided which focuses on the ten major tunable metasurface mechanisms. For each type of mechanism, the performance metrics on the reported tunable metasurface are outlined, and the capabilities/limitations of each mechanism and its potential for various photonic applications are compared and summarized. This review concludes with discussion of several prospective applications, emerging technologies, and research directions based on the use of tunable optical metasurfaces. We anticipate significant new advances when the tunable mechanisms are further developed in the coming years.

All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect

The combination of the integrated waveguide and phase-change materials (PCMs) provides a promising platform for reconfigurable and multifunctional photoelectric devices. Through plasmonic enhancement and the low loss propagation of the waveguide, the footprint and power consumption of the photoelectric device can be effectively improved. In this work, a metal double-ring structure embedded with phase change materials was proposed to utilize the plasmonic effect for enhancement of the light-matter interaction. In particular, the overall temperature difference in the PCM cell can be confined within 2 °C during the crystallization process, thus avoiding the interior heterogeneous crystallization. The insertion loss of the cell in amorphous and crystalline states at a wavelength of 1550 nm are 2.3 dB and 1.0 dB, respectively. A signal contrast ratio of 15.8% is achieved under the ultra-small footprint (50 × 90 nm2) at a wavelength of 1550 nm.

Dynamic Color Tuning with Electrochemically Actuated TiO2 Metasurfaces

Dynamic tuning of metamaterials is a critical step toward advanced functionality and improved bandwidth. In the visible spectrum, full spectral color tuning is inhibited by the large absorption that accompanies index changes, particularly at blue wavelengths. Here, we show that the electrochemical lithiation of anatase TiO₂ to Li_0.5TiO₂ (LTO) results in an index change of 0.65 at 649 nm with absorption coefficient less than 0.1 at blue wavelengths, making this material well-suited for dynamic visible color tuning. Dynamic tunability of TiO₂ is leveraged in a Fabry-Perot cavity and a gap plasmon metasurface. In the Fabry-Perot configuration, the device exhibits a shift in reflectance of over 100 nm when subjected to only 2 V bias while the gap plasmon metasurface achieves enhanced switching speed. The dynamic range, speed, and cyclability indicate that the TiO₂/LTO system is competitive with established actuators like WO₃, with the additional advantage of reduced absorption at high frequencies.

Non-Volatile Programmable Ultra-Small Photonic Arbitrary Power Splitters

A series of reconfigurable compact photonic arbitrary power splitters are proposed based on the hybrid structure of silicon and Ge₂Sb₂Se₄Te₁ (GSST), which is a new kind of non-volatile optical phase change material (O-PCM) with low absorption. Our pixelated meta-hybrid has an extremely small photonic integrated circuit (PIC) footprint with a size comparable to that of the most advanced electronic integrated circuits (EICs). The power-split ratio can be reconfigured in a completely digital manner through the amorphous and crystalline switching of the GSST material, which only coated less than one-fifth of the pattern allocation area. The target power–split ratio between the output channels can be arbitrarily reconfigured digitally with high precision and in the valuable C-band (1530–1560 nm) based on the analysis of three-dimensional finite-difference time-domain. The 1 × 2, 1 × 3, and 1 × 4 splitting configurations were all investigated with a variety of power–split ratios for each case, and the corresponding true value tables of GSST distribution are given. These non-volatile hybrid photonic splitters offer the advantages of an extremely small footprint and non-volatile digital programmability, which are favorable to the truly optoelectronic fusion chip.

Thermally Controlled Charge-Carrier Transitions in Disordered PbSbTe Chalcogenides

Binary and ternary chalcogenides have recently attracted much attention due to their wide range of applications including phase-change memory materials, topological insulators, photonic switches, and thermoelectrics. These applications require a precise control of the number and mobility of charge carriers. Here, an unexpected charge-carrier transition in ternary compounds from the PbTe-Sb2 Te3 pseudo-binary line is reported. Upon thermal annealing, sputtered thin films of PbSb2 Te4 and Pb2 Sb2 Te5 undergo a transition in the temperature coefficient of resistance and in the type of the majority charge carriers from n-type to p-type. These transitions are observed upon increasing structural order within one crystallographic phase. To account for this striking observation, it is proposed that the Fermi energy shifts from the tail of the conduction band to the valence band because different levels of overall structural disorder lead to different predominant types of native point defects. This view is confirmed by an extensive computational study, revealing a transition from excess cations and SbPb for high levels of disorder to PbSb prevailing for low disorder. The findings will help fine-tune transport properties in certain chalcogenides via proper thermal treatment, with potential benefits for memories, thermoelectric material optimization, and neuromorphic devices.