Electron-beam-induced Perovskite-Brownmillerite-Perovskite structural phase transitions in epitaxial La2/3Sr1/3MnO3 films

in situ observation of reversible phase transitions in Gd-doped ceria driven by electron beam irradiation

Ceria-based oxides are widely utilized in diverse energy-related applications, with attractive functionalities arising from a defective structure due to the formation of mobile oxygen vacancies (V O ⋅ ⋅ ). Notwithstanding its significance, behaviors of the defective structure andV O ⋅ ⋅ in response to external stimuli remain incompletely explored. Taking the Gd-doped ceria (Ce0.88Gd0.12O2-δ) as a model system and leveraging state-of-the-art transmission electron microscopy techniques, reversible phase transitions associated with massiveV O ⋅ ⋅ rearrangement are stimulated and visualized in situ with sub-Å resolution. Electron dose rate is identified as a pivotal factor in modulating the phase transition, and both theV O ⋅ ⋅ concentration and the orientation of the newly formed phase can be altered via electron beam. Our results provide indispensable insights for understanding and refining the microscopic pathways of phase transition as well as defect engineering, and could be applied to other similar functional oxides.

Electron beam lithography of GeTe through polymorphic phase transformation

We report two previously undiscovered phases of GeTe including the sphalerite (c-) phase and the hexagonal (h-) phase with interlayer van der Waals gaps. A polymorphic phase transformation from rhombohedral α-GeTe to c- and h-GeTe at near room temperature is first realized via electron beam irradiation. Their underlying thermodynamics and kinetics are illustrated using the in situ heating experiments and molecular dynamics simulations. Density-functional theory calculations indicate that c-GeTe exhibits typical metallic behavior and h-GeTe is a narrow-gap semiconductor with a strong spin-orbital coupling effect. Our findings shed light on a strategy for designing GeTe-based quantum devices compromising nanopillars and heterostructures via an atomic-scale electron beam lithography technique.

Multi-Stimuli Operando Transmission Electron Microscopy for Two-Terminal Oxide-Based Devices

The integration of microelectromechanical systems (MEMS)-based chips for in situ transmission electron microscopy (TEM) has emerged as a highly promising technique in the study of nanoelectronic devices within their operational parameters. This innovative approach facilitates the comprehensive exploration of electrical properties resulting from the simultaneous exposure of these devices to a diverse range of stimuli. However, the control of each individual stimulus within the confined environment of an electron microscope is challenging. In this study, we present novel findings on the effect of a multi-stimuli application on the electrical performance of TEM lamella devices. To approximate the leakage current measurements of macroscale electronic devices in TEM lamellae, we have developed a postfocused ion beam (FIB) healing technique. This technique combines dedicated MEMS-based chips and in situ TEM gas cells, enabling biasing experiments under environmental conditions. Notably, our observations reveal a reoxidation process that leads to a decrease in leakage current for SrTiO3-based memristors and BaSrTiO3-based tunable capacitor devices following ion and electron bombardment in oxygen-rich environments. These findings represent a significant step toward the realization of multi-stimuli TEM experiments on metal-insulator-metal devices, offering the potential for further exploration and a deeper understanding of their intricate behavior.

Highly efficient and fast modulation of magnetic coupling interaction in the SrCoO2.5/La0.7Ca0.3MnO3 heterostructure

Effective manipulation of magnetic properties in transition-metal oxides is one of the crucial issues for the application of materials. Up to now, most investigations have focused on electrolyte-based ionic control, which is limited by the slow speed. In this work, the interfacial coupling of the SrCoO2.5/La0.7Ca0.3MnO3 (LCMO) bilayer is effectively modulated with fast response time. After being treated with diluted acetic acid, the bilayer changes from antiferromagnetic/ferromagnetic (AFM/FM) coupling to FM/FM coupling and the Curie temperature is also effectively increased. Meanwhile, the corresponding electric transport properties are modulated within a very short time. Combined with the structure characterization and X-ray absorption measurements, we find that the top SrCoO2.5 layer is changed from the antiferromagnetic insulator to the ferromagnetic metal phase, which is attributed to the formation of the active oxygen species due to the reaction between the protons in the acid and the SrCoO2.5 layer. The bottom LCMO layer remains unchanged during this process. The response time of the bilayer with the acid treatment method is more than an order of magnitude faster than other methods. It is expected that this acid treatment method may open more possibilities for manipulating the magnetic and electric properties in oxide-based devices.

Interface-type tunable oxygen ion dynamics for physical reservoir computing

Reservoir computing can more efficiently be used to solve time-dependent tasks than conventional feedforward network owing to various advantages, such as easy training and low hardware overhead. Physical reservoirs that contain intrinsic nonlinear dynamic processes could serve as next-generation dynamic computing systems. High-efficiency reservoir systems require nonlinear and dynamic responses to distinguish time-series input data. Herein, an interface-type dynamic transistor gated by an Hf0.5Zr0.5O2 (HZO) film was introduced to perform reservoir computing. The channel conductance of Mott material La0.67Sr0.33MnO3 (LSMO) can effectively be modulated by taking advantage of the unique coupled property of the polarization process and oxygen migration in hafnium-based ferroelectrics. The large positive value of the oxygen vacancy formation energy and negative value of the oxygen affinity energy resulted in the spontaneous migration of accumulated oxygen ions in the HZO films to the channel, leading to the dynamic relaxation process. The modulation of the channel conductance was found to be closely related to the current state, identified as the origin of the nonlinear response. In the time series recognition and prediction tasks, the proposed reservoir system showed an extremely low decision-making error. This work provides a promising pathway for exploiting dynamic ion systems for high-performance neural network devices.

Guided anisotropic oxygen transport in vacancy ordered oxides

Anisotropic and efficient transport of ions under external stimuli governs the operation and failure mechanisms of energy-conversion systems and microelectronics devices. However, fundamental understanding of ion hopping processes is impeded by the lack of atomically precise materials and probes that allow for the monitoring and control at the appropriate time- and length- scales. In this work, using in-situ transmission electron microscopy, we directly show that oxygen ion migration in vacancy ordered, semiconducting SrFeO2.5 epitaxial thin films can be guided to proceed through two distinctly different diffusion pathways, each resulting in different polymorphs of SrFeO2.75 with different ground electronic properties before reaching a fully oxidized, metallic SrFeO3 phase. The diffusion steps and reaction intermediates are revealed by means of ab-initio calculations. The principles of controlling oxygen diffusion pathways and reaction intermediates demonstrated here may advance the rational design of structurally ordered oxides for tailored applications and provide insights for developing devices with multiple states of regulation.

Time-resolved transmission electron microscopy for nanoscale chemical dynamics

The ability of transmission electron microscopy (TEM) to image a structure ranging from millimetres to Ångströms has made it an indispensable component of the toolkit of modern chemists. TEM has enabled unprecedented understanding of the atomic structures of materials and how structure relates to properties and functions. Recent developments in TEM have advanced the technique beyond static material characterization to probing structural evolution on the nanoscale in real time. Accompanying advances in data collection have pushed the temporal resolution into the microsecond regime with the use of direct-electron detectors and down to the femtosecond regime with pump-probe microscopy. Consequently, studies have deftly applied TEM for understanding nanoscale dynamics, often in operando. In this Review, time-resolved in situ TEM techniques and their applications for probing chemical and physical processes are discussed, along with emerging directions in the TEM field.

Realizing Metastable Cobaltite Perovskite via Proton-Induced Filling of Oxygen Vacancy Channels

The interaction between transition-metal oxides (TMOs) and protons has become a key issue in magneto-ionics and proton-conducting fuel cells. Until now, most investigations on oxide-proton reactions rely on electrochemical tools, while the direct interplay between protons and oxides remains basically at simple dissolution of metal oxides by an acidic solution. In this work, we find classical TMO brownmillerite SrCoO_2.5 (B-SCO) films with ordered oxygen vacancy channels experiencing an interesting transition to a metastable perovskite phase (M-SCO) in a weak acidic solution. M-SCO exhibits a strong ferromagnetism (1.01 μ_B/Co, T_c > 200 K) and a greatly elevated electrical conductivity (∼10⁴ of pristine SrCoO_2.5), which is similar to the prototypical perovskite SrCoO₃. Besides, such M-SCO tends to transform back to B-SCO in a vacuum environment or heating at a relatively low temperature. Two possible mechanisms (H₂O addition/active oxygen filling) have been proposed to explain the phenomenon, and the control experiments demonstrate that the latter mechanism is the dominant process. Our work finds a new way to realize cobaltite perovskite with enhanced magnetoelectric properties and may deepen the understanding of oxide-proton interaction in an aqueous solution.

Structural Phase Transition and In-Situ Energy Storage Pathway in Nonpolar Materials: A Review

Benefitting from exceptional energy storage performance, dielectric-based capacitors are playing increasingly important roles in advanced electronics and high-power electrical systems. Nevertheless, a series of unresolved structural puzzles represent obstacles to further improving the energy storage performance. Compared with ferroelectrics and linear dielectrics, antiferroelectric materials have unique advantages in unlocking these puzzles due to the inherent coupling of structural transitions with the energy storage process. In this review, we summarize the most recent studies about in-situ structural phase transitions in PbZrO₃-based and NaNbO₃-based systems. In the context of the ultrahigh energy storage density of SrTiO₃-based capacitors, we highlight the necessity of extending the concept of antiferroelectric-to-ferroelectric (AFE-to-FE) transition to broader antiferrodistortive-to-ferrodistortive (AFD-to-FD) transition for materials that are simultaneously ferroelastic. Combining discussion of the factors driving ferroelectricity, electric-field-driven metal-to-insulator transition in a (La_1−xSr_x)MnO₃ electrode is emphasized to determine the role of ionic migration in improving the storage performance. We believe that this review, aiming at depicting a clearer structure–property relationship, will be of benefit for researchers who wish to carry out cutting-edge structure and energy storage exploration.

Exploring the Spatial Control of Topotactic Phase Transitions Using Vertically Oriented Epitaxial Interfaces

Engineering oxygen vacancy formation and distribution is a powerful route for controlling the oxygen sublattice evolution that affects diverse functional behavior. The controlling of the oxygen vacancy formation process is particularly important for inducing topotactic phase transitions that occur by transformation of the oxygen sublattice. Here we demonstrate an epitaxial nanocomposite approach for exploring the spatial control of topotactic phase transition from a pristine perovskite phase to an oxygen vacancy-ordered brownmillerite (BM) phase in a model oxide La_0.7Sr_0.3MnO₃ (LSMO). Incorporating a minority phase NiO in LSMO films creates ultrahigh density of vertically aligned epitaxial interfaces that strongly influence the oxygen vacancy formation and distribution in LSMO. Combined structural characterizations reveal strong interactions between NiO and LSMO across the epitaxial interfaces leading to a topotactic phase transition in LSMO accompanied by significant morphology evolution in NiO. Using the NiO nominal ratio as a single control parameter, we obtain intermediate topotactic nanostructures with distinct distribution of the transformed LSMO-BM phase, which enables systematic tuning of magnetic and electrical transport properties. The use of self-assembled heterostructure interfaces by the epitaxial nanocomposite platform enables more versatile design of topotactic phase structures and correlated functionalities that are sensitive to oxygen vacancies.

Evidence of Mn-Ion Structural Displacements Correlated with Oxygen Vacancies in La0.7Sr0.3MnO3 Interfacial Dead Layers

The properties of half-metallic manganite thin films depend on the composition and structure in the atomic scale, and consequently, their potential functional behavior can only be based on fine structure characterization. By combining advanced transmission electron microscopy, electron energy loss spectroscopy, density functional theory calculations, and multislice image simulations, we obtained evidence of a 7 nm-thick interface layer in La_0.7Sr_0.3MnO₃ (LSMO) thin films, compatible with the formation of well-known dead layers in manganites, with an elongated out-of-plane lattice parameter and structural and electronic properties well distinguished from the bulk of the film. We observed, for the first time, a structural shift of Mn ions coupled with oxygen vacancies and a reduced Mn valence state within such layer. Understanding the correlation between oxygen vacancies, the Mn oxidation state, and Mn-ion displacements is a prerequisite to engineer the magnetotransport properties of LSMO thin films.

Structural Phase Transitions to 2D and 3D Oxygen Vacancy Patterns in a Perovskite Film Induced by Electrical and Mechanical Nanoprobing

Oxygen vacancy migration and ordering in perovskite oxides enable manipulation of material properties through changes in the cation oxidation state and the crystal lattice. In thin-films, oxygen vacancies conventionally order into equally spaced planes. Here, it is shown that the planar 2D symmetry is broken if a mechanical nanoprobe restricts the chemical lattice expansion that the vacancies generate. Using in situ scanning transmission electron microscopy, a transition from a perovskite structure to a 3D vacancy-ordered phase in an epitaxial La_2/3 Sr_1/3 MnO_{3- δ} film during voltage pulsing under local mechanical straining is imaged. The never-before-seen ordering pattern consists of a complex network of distorted oxygen tetrahedra, pentahedra, and octahedra that, together, produce a corrugated atomic structure with lattice constants varying between 3.5 and 4.6 Å. The giant lattice distortions respond sensitively to strain variations, offering prospects for non-volatile nanoscale physical property control driven by voltage and gated by strain.

Probing One-Dimensional Oxygen Vacancy Channels Driven by Cation-Anion Double Ordering in Perovskites

Visualizing the oxygen vacancy distributions is highly desirable for understanding the atomistic oxygen diffusion mechanisms in perovskites. In particular, the direct observation of the one-dimensional oxygen vacancy channels has not yet been achieved in perovskites with dual ion (i.e., cation and anion) ordering. Here, we perform atomic-resolution imaging of the one-dimensional oxygen vacancy channels and their structural dynamics in a NdBaCo₂O_5.5 double perovskite oxide. An in situ heating transmission electron microscopy investigation reveals the disordering of oxygen vacancy channels by local rearrangement of oxygen vacancies at the specific temperature. A density functional theory calculation suggests that the possible pathway of oxygen vacancy migration is a multistep route via Co-O and Nd-O_v (oxygen vacancy) sites. These findings could provide robust guidance for understanding the static and dynamic behaviors of oxygen vacancies in perovskite oxides.

Nanoscale Phase Mixture and Multifield-Induced Topotactic Phase Transformation in SrFeOx

Nanoscale phase mixtures in transition-metal oxides (TMOs) often render these materials susceptible to external stimuli (electric field, mechanical stress, etc.), which can lead to rich functional properties and device applications. Here, direct observation and multifield manipulation of a nanoscale mixture of brownmillerite SrFeO_2.5 (BM-SFO) and perovskite SrFeO₃ (PV-SFO) phases in SrFeO_x (SFO) epitaxial thin films are reported. The mixed-phase SFO film in its pristine state exhibits a nanoscaffold structure consisting of PV-SFO nanodomains embedded in the BM-SFO matrix. This nanoscaffold structure produces gridlike patterns in the current and electrochemical strain maps, owing to the strikingly different electrical and electrochemical properties of BM-SFO and PV-SFO. Moreover, electric field control of reversible topotactic phase transformation between BM-SFO and PV-SFO is demonstrated by electric-field-induced reversible changes in surface height, conductance, and electrochemical strain response. In addition, it is also shown that the BM-SFO → PV-SFO phase transformation can be enabled by applying mechanical stress. This study therefore not only identifies a strong nanometric structure-property correlation in the mixed-phase SFO but also offers a new paradigm for the multifield control of topotactic phase transformation.

An Unconventional Transient Phase with Cycloidal Order of Polarization in Energy-Storage Antiferroelectric PbZrO3

Antiferroelectric-based dielectric capacitors are receiving tremendous attention for their outstanding energy-storage performance and extraordinary flexibility in collecting pulsed powers. Nevertheless, the in situ atomic-scale structural-evolution pathway, inherently coupling to the energy storage process, has not been elucidated for the ultimate mechanistic understanding so far. Here, time- and atomic-resolution structural phase evolution in antiferroelectric PbZrO₃ during storage of energy from the electron-beam illumination is reported. By employing state-of-the-art negative-spherical-aberration imaging technique, the quantitative transmission electron microscopy study presented herein clarifies that the hierarchical evolution of polar oxygen octahedra associated with the unit-cell volume change and polarization rotation accounts for the stepwise antiferroelectric-to-ferroelectric phase transition. In particular, an unconventional ferroelectric category-the ferrodistortive phase characteristic of a unique cycloidal polarization order-is established during the dynamic structure investigation. Through clarifying the atomic-scale phase transformation pathway, findings of this work unveil a new territory to explore novel ferrodistortive phases in energy-storage materials with the nonpolar-to-polar phase transitions.

Two Kinds of Metastable Structures in an Epitaxial Lanthanum Cobalt Oxide Thin Film

Thin films have attracted much interest because they often have novel properties different from those of their bulk counterparts. In this work, we tune two metastable states in three kinds of lanthanum cobalt oxide thin films by electron beam irradiation and record their dynamic transition process in situ in a transmission electron microscope. The lanthanum cobalt oxide thin films exhibit a homogeneous microstructure in the initial state and then transfer to a stripelike superstructure with 3a₀ periodicity (a₀ is the perovskite lattice parameter), further developing into a superstructure with 2a₀ periodicity in dark stripes (brownmillerite structure). To explore the inherent energy discrepancy within the two metastable states, we perform first-principles calculations on a LaCoO_3-δ (0 ≤ δ ≤ 0.5) thin film system by geometry optimization. The calculation results suggest that the forming energy of the 3a₀ periodicity stripelike structure is a little lower than that of the 2a₀ periodicity in the LaCoO_3-δ thin film. Our work explains why the two stripelike structures coexist in lanthanum cobalt oxide thin films and extends prospective applications related to oxygen vacancies in thin films.

Size-Dependent Phase Transformation of Noble Metal Nanomaterials

As an important aspect of crystal phase engineering, controlled crystal phase transformation of noble metal nanomaterials has emerged as an effective strategy to explore novel crystal phases of nanomaterials. In particular, it is of significant importance to observe the transformation pathway and reveal the transformation mechanism in situ. Here, the phase transformation behavior of face-centered cubic (fcc) Au nanoparticles (fcc-AuNPs), adhering to the surface of 4H nanodomains in 4H/fcc Au nanorods, referred to as 4H-AuNDs, during in situ transmission electron microscopy imaging is systematically studied. It is found that the phase transformation is dependent on the ratio of the size of the monocrystalline nanoparticle (NP) to the diameter of 4H-AuND. Furthermore, molecular dynamics simulation and theoretical modeling are used to explain the experimental results, giving a size-dependent phase transformation diagram which provides a general guidance to predict the phase transformation pathway between fcc and 4H Au nanomaterials. Impressively, this method is general, which is used to study the phase transformation of other metal NPs, such as Pd, Ag, and PtPdAg, adhering to 4H-AuNDs. The work opens an avenue for selective phase engineering of nanomaterials which may possess unique physicochemical properties and promising applications.

Giant Electroresistance in Ferroionic Tunnel Junctions

Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It functions as a ferroelectric tunnel junction at low resistance state and as a Schottky junction at high resistance state, due to interface engineering through the field-induced migration of oxygen vacancies. An extremely large electroresistance with ON/OFF ratios of 5.1×107 at room temperature and 2.1×109 at 10 K is achieved, using an ultrathin BaTiO3-δ layer as the ferroelectric barrier and a semiconducting Nb-doped SrTiO3 substrate as the bottom electrode. The results point toward an appealing way for the design of high-performance resistive switching devices based on ultrathin oxide heterostructures by ionic controlled interface engineering.

Reversible Control of Physical Properties via an Oxygen-Vacancy-Driven Topotactic Transition in Epitaxial La0.7 Sr0.3 MnO3- δ Thin Films

The vacancy distribution of oxygen and its dynamics directly affect the functional response of complex oxides and their potential applications. Dynamic control of the oxygen composition may provide the possibility to deterministically tune the physical properties and establish a comprehensive understanding of the structure-property relationship in such systems. Here, an oxygen-vacancy-induced topotactic transition from perovskite to brownmillerite and vice versa in epitaxial La_0.7 Sr_0.3 MnO_{3- δ} thin films is identified by real-time X-ray diffraction. A novel intermediate phase with a noncentered crystal structure is observed for the first time during the topotactic phase conversion which indicates a distinctive transition route. Polarized neutron reflectometry confirms an oxygen-deficient interfacial layer with drastically reduced nuclear scattering length density, further enabling a quantitative determination of the oxygen stoichiometry (La_0.7 Sr_0.3 MnO_2.65 ) for the intermediate state. Associated physical properties of distinct topotactic phases (i.e., ferromagnetic metal and antiferromagnetic insulator) can be reversibly switched by an oxygen desorption/absorption cycling process. Importantly, a significant lowering of necessary conditions (temperatures below 100 °C and conversion time less than 30 min) for the oxygen reloading process is found. These results demonstrate the potential applications of defect engineering in the design of perovskite-based functional materials.

Symmetry mismatch-driven perpendicular magnetic anisotropy for perovskite/brownmillerite heterostructures

Grouping different transition metal oxides together by interface engineering is an important route toward emergent phenomenon. While most of the previous works focused on the interface effects in perovskite/perovskite heterostructures, here we reported on a symmetry mismatch-driven spin reorientation toward perpendicular magnetic anisotropy in perovskite/brownmillerite heterostructures, which is scarcely seen in tensile perovskite/perovskite heterostructures. We show that alternately stacking perovskite La_2/3Sr_1/3MnO₃ and brownmillerite LaCoO_2.5 causes a strong interface reconstruction due to symmetry discontinuity at interface: neighboring MnO₆ octahedra and CoO₄ tetrahedra at the perovskite/brownmillerite interface cooperatively relax in a manner that is unavailable for perovskite/perovskite interface, leading to distinct orbital reconstructions and thus the perpendicular magnetic anisotropy. Moreover, the perpendicular magnetic anisotropy is robust, with an anisotropy constant two orders of magnitude greater than the in-plane anisotropy of the perovskite/perovskite interface. The present work demonstrates the great potential of symmetry engineering in designing artificial materials on demand.

Complex oxide heterostructures exhibit multifunctional behaviour that could be used in a range of device applications. Here, the authors observe that reconstruction at oxide perovskite/brownmillerite interfaces leads to perpendicular magnetic spin orientation, with potential use in spintronic devices.

Electron-beam-induced phase transition in the transmission electron microscope: the case of VO2(B)

A phase transition process from VO₂(B) to VO₂(M1) was made possible under electron beam irradiation without the help of elevating the temperature.

Spatially Confined Spin Polarization and magnetic sublattice control in (La,Sr)MnO3-δ Thin Films by Oxygen Vacancy Ordering

Perovskite oxides are known for their strong structure property coupling and functional properties such as ferromagntism, ferroelectricity and high temperature superconductivity. While the effect of ordered cation vacancies on functional properties have been much studied, the possibility of tuning the functionality through anion vacancy ordering has received much less attention. Oxygen vacancies in ferromagnetic La_0.7Sr_0.3MnO_3−δ thin films have recently been shown to accumulate close to interfaces and form a brownmillerite structure (ABO_2.5). This structure has alternating oxygen octahedral and tetrahedral layers along the stacking direction, making it a basis for a family of ordered anion defect controlled materials. We use density functional theory to study how structure and properties depend on oxygen stoichiometry, relying on a block-by-block approach by including additional octahedral layers in-between each tetrahedral layer. It is found that the magnetic and electronic structures follow the layers enforced by the ordered oxygen vacancies. This results in spatially confined electronic conduction in the octahedral layers, and decoupling of the magnetic sub-lattices in the octahedral and tetrahedral layers. These results demonstrate that anion defect engineering is a promising tool to tune the properties of functional oxides, adding a new avenue for developing functional oxide device technology.

Direct observation of oxygen vacancy-driven structural and resistive phase transitions in La2/3Sr1/3MnO3

Resistive switching in transition metal oxides involves intricate physical and chemical behaviours with potential for non-volatile memory and memristive devices. Although oxygen vacancy migration is known to play a crucial role in resistive switching of oxides, an in-depth understanding of oxygen vacancy-driven effects requires direct imaging of atomic-scale dynamic processes and their real-time impact on resistance changes. Here we use in situ transmission electron microscopy to demonstrate reversible switching between three resistance states in epitaxial La_2/3Sr_1/3MnO₃ films. Simultaneous high-resolution imaging and resistance probing indicate that the switching events are caused by the formation of uniform structural phases. Reversible horizontal migration of oxygen vacancies within the manganite film, driven by combined effects of Joule heating and bias voltage, predominantly triggers the structural and resistive transitions. Our findings open prospects for ionotronic devices based on dynamic control of physical properties in complex oxide nanostructures.

An in-depth understanding of oxygen vacancy-driven effects is necessary for the development of functional ionic devices. Using simultaneous high-resolution imaging and resistance probing, Yao et al. demonstrate oxygen vacancy-driven structural and resistive transitions between three distinct phases in La_2/3Sr_1/3MnO₃.

Electron beam induced epitaxial crystallization in a conducting and insulating a-LaAlO3/SrTiO3system

We report the effect of the interfacial conductivity on the e-beam-induced crystallization of an oxide a-LaAlO₃thin film on the SrTiO₃substrate and the kinetics can be controlled by the electrical conductivity of the interface and the dose rate.

Electron-Beam-Induced Antiphase Boundary Reconstructions in a ZrO2-LSMO Pillar-Matrix System

The availability of aberration correctors for the probe-forming lenses makes simultaneous modification and characterization of materials down to atomic scale inside a transmission electron microscopy (TEM) realizable. In this work, we report on the electron-beam-induced reconstructions of three types of antiphase boundaries (APBs) in a probe-aberration-corrected TEM. With the utilization of high-angle annular dark-field scanning transmission electron microscopy (STEM), annular bright-field STEM, and electron energy-loss spectroscopy, the motion of both heavy element Mn and light element O atomic columns under moderate electron beam irradiation are revealed at atomic resolution. Besides, Mn segregated in the APBs was observed to have reduced valence states which can be directly correlated with oxygen loss. Charge states of the APBs are finally discussed on the basis of these experimental results. This study provides support for the design of radiation-engineering solid-oxide fuel cell materials.

Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces

Universal, giant and nonvolatile resistive switching is demonstrated for oxide tunnel junctions with ferroelectric PbZr0.2 Ti0.8 O3 , ferroelectric BaTiO3, and paraelectric SrTiO3 tunnel barriers. The effects are caused by reversible migration of oxygen vacancies between the tunnel barrier and bottom La2/3 Sr1/3 MnO3 electrode. The switching process, which is driven by large electric fields, is efficient down to a temperature of 5 K.

Assessing electron beam sensitivity for SrTiO3 and La0.7Sr0.3MnO3 using electron energy loss spectroscopy

Thresholds for beam damage have been assessed for La0.7Sr0.3MnO3 and SrTiO3 as a function of electron probe current and exposure time at 80 and 200kV acceleration voltage. The materials were exposed to an intense electron probe by aberration corrected scanning transmission electron microscopy (STEM) with simultaneous acquisition of electron energy loss spectroscopy (EELS) data. Electron beam damage was identified by changes of the core loss fine structure after quantification by a refined and improved model based approach. At 200kV acceleration voltage, damage in SrTiO3 was identified by changes both in the EEL fine structure and by contrast changes in the STEM images. However, the changes in the STEM image contrast as introduced by minor damage can be difficult to detect under several common experimental conditions. No damage was observed in SrTiO3 at 80kV acceleration voltage, independent of probe current and exposure time. In La0.7Sr0.3MnO3, beam damage was observed at both 80 and 200kV acceleration voltages. This damage was observed by large changes in the EEL fine structure, but not by any detectable changes in the STEM images. The typical method to validate if damage has been introduced during acquisitions is to compare STEM images prior to and after spectroscopy. Quantifications in this work show that this method possibly can result in misinterpretation of beam damage as changes of material properties.

Insulating phase at low temperature in ultrathin La0.8Sr0.2MnO3 films

Metal-insulator transition is observed in the La0.8Sr0.2MnO3 thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells and it is found that the Mott variable range hopping conduction dominates in this insulating phase at low temperature with a decrease of localization length in thinner films. A deficiency of oxygen content and a resulting decrease of the Mn valence have been observed in the ultrathin films with thickness smaller than or equal to 10 unit cells by studying the aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy of the films. These results suggest that the existence of the oxygen vacancies in thinner films suppresses the double-exchange mechanism and contributes to the enhancement of disorder, leading to a decrease of the Curie temperature and the low temperature insulating phase in the ultrathin films. In addition, the suppression of the magnetic properties in thinner films indicates stronger disorder of magnetic moments, which is considered to be the reason for this decrease of the localization length.

Atomic Scale Imaging of Nucleation and Growth Trajectories of an Interfacial Bismuth Nanodroplet

Because of the lack of experimental evidence, much confusion still exists on the nucleation and growth dynamics of a nanostructure, particularly of metal. The situation is even worse for nanodroplets because it is more difficult to induce the formation of a nanodroplet while imaging the dynamic process with atomic resolution. Here, taking advantage of an electron beam to induce the growth of Bi nanodroplets on a SrBi2Ta2O9 platelet under a high resolution transmission electron microscope (HRTEM), we directly observed the detailed growth pathways of Bi nanodroplets from the earliest stage of nucleation that were previously inaccessible. Atomic scale imaging reveals that the dynamics of nucleation involves a much more complex trajectory than previously predicted based on classical nucleation theory (CNT). The monatomic Bi layer was first formed in the nucleation process, which induced the formation of the prenucleated clusters. Following that, critical nuclei for the nanodroplets formed both directly from the addition of atoms to the prenucleated clusters by the classical growth process and indirectly through transformation of an intermediate liquid film based on the Stranski-Krastanov growth mode, in which the liquid film was induced by the self-assembly of the prenucleated clusters. Finally, the growth of the Bi nanodroplets advanced through the classical pathway and sudden droplet coalescence. This study allows us to visualize the critical steps in the nucleation process of an interfacial nanodroplet, which suggests a revision of the perspective of CNT.

Electron beam damage in oxides: a review

This review summarizes a variety of beam damage phenomena relating to oxides in (scanning) transmission electron microscopes, and underlines the shortcomings of currently popular mechanisms. These phenomena include mass loss, valence state reduction, phase decomposition, precipitation, gas bubble formation, phase transformation, amorphization and crystallization. Moreover, beam damage is also dependent on specimen thickness, specimen orientation, beam voltage, beam current density and beam size. This article incorporates all of these damage phenomena and experimental dependences into a general description, interpreted by a unified mechanism of damage by induced electric field. The induced electric field is produced by positive charges, which are generated from excitation and ionization. The distribution of the induced electric fields inside a specimen is beam-illumination- and specimen-shape- dependent, and associated with the experimental dependence of beam damage. Broadly speaking, the mechanism operates differently in two types of material. In type I, damage increases the resistivity of the irradiated materials, and is thus divergent, resulting in phase separation. In type II, damage reduces the resistivity of the irradiated materials, and is thus convergent, resulting in phase transformation. Damage by this mechanism is dependent on electron-beam current density. The two experimental thresholds are current density and irradiation time. The mechanism comes into effect when these thresholds are exceeded, below which the conventional mechanisms of knock-on and radiolysis still dominate.

Interface Reactions in LSMO-Metal Hybrid Structures

Perovskites form a class of promising materials for the development of multifunctional devices but require reliable strategies for forming electrical contacts without compromising functionality. We explore the interactions of a range of metal contacts with ferromagnetic oxide La0.7Sr0.3MnO3 (LSMO) and discuss their impact on the magnetic, structural, and chemical properties of the oxide. Although the noble metals gold and silver have negligible impact, metals typically used as adhesion layers, such as titanium and chromium, drive substantial reduction of the oxide, impairing its performance. These effects can be suppressed by inserting a thin barrier layer, such as the conductive oxide SrRuO3.

Interfacial Properties of Organic Semiconductor-Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition

We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices.

Frenkel-Defect-Mediated Chemical Ordering Transition in a Li-Mn-Ni Spinel Oxide

Using spinel-type Li(Mn(1.5)Ni(0.5) )O4 with two different cations, Mn and Ni, in the oxygen octahedra as a model system, we show that a cation ordering transition takes place through the formation of Frenkel-type point defects. A series of experimental results based on atomic-scale observations and in situ powder diffractions along with ab initio calculations consistently support such defect-mediated transition behavior. In addition to providing a precise suggestion of the intermediate transient states and the resulting kinetic pathway during the transition between two phases, our findings emphasize the significant role of point defects in ordering transformation of complex oxides.