1
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Zhang S, Xia Z, Meng J, Cheng Y, Jiang J, Yin Z, Zhang X. Electronic and Transport Properties of InSe/PtTe 2 van der Waals Heterostructure. NANO LETTERS 2024. [PMID: 38935418 DOI: 10.1021/acs.nanolett.4c02067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2024]
Abstract
Two-dimensional (2D) InSe and PtTe2 have drawn extensive attention due to their intriguing properties. However, the InSe monolayer is an indirect bandgap semiconductor with a low hole mobility. van der Waals (vdW) heterostructures produce interesting electronic and optoelectronic properties beyond the existing 2D materials and endow totally new device functions. Herein, we theoretically investigated the electronic structures, transport behaviors, and electric field tuning effects of the InSe/PtTe2 vdW heterostructures. The calculated results show that the direct bandgap type-II vdW heterostructures can be realized by regulating the stacking configurations of heterostructures. By applying an external electric field, the band alignment and bandgap of the heterostructures can also be flexibly modulated. Particularly, the hole mobility of the heterostructures is improved by 2 orders of magnitude to ∼103 cm2 V-1 s-1, which overcomes the intrinsic disadvantage of the InSe monolayer. The InSe/PtTe2 vdW heterostructures have great potential applications in developing novel optoelectronic devices.
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Affiliation(s)
- Siyu Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhengchang Xia
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Junhua Meng
- School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - Yong Cheng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ji Jiang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhigang Yin
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xingwang Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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Cao H, Hu T, Zhang J, Zhao D, Chen Y, Wang X, Yang J, Zhang Y, Tang X, Bai W, Shen H, Wang J, Chu J. Electrically Tunable Multiple-Effects Synergistic and Boosted Photoelectric Performance in Te/WSe 2 Mixed-Dimensional Heterojunction Phototransistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400018. [PMID: 38502873 PMCID: PMC11165519 DOI: 10.1002/advs.202400018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2024] [Revised: 02/19/2024] [Indexed: 03/21/2024]
Abstract
Mix-dimensional heterojunctions (MDHJs) photodetectors (PDs) built from bulk and 2D materials are the research focus to develop hetero-integrated and multifunctional optoelectronic sensor systems. However, it is still an open issue for achieving multiple effects synergistic characteristics to boost sensitivity and enrich the prospect in artificial bionic systems. Herein, electrically tunable Te/WSe2 MDHJs phototransistors are constructed, and an ultralow dark current below 0.1 pA and a large on/off rectification ratio of 106 is achieved. Photoconductive, photovoltaic, and photo-thermoelectric conversions are simultaneously demonstrated by tuning the gate and bias. By these synergistic effects, responsivity and detectivity respectively reach 13.9 A W-1 and 1.37 × 1012 Jones with 400 times increment. The Te/WSe2 MDHJs PDs can function as artificial bionic visual systems due to the comparable response time to those of the human visual system and the presence of transient positive and negative response signals. This work offers an available strategy for intelligent optoelectronic devices with hetero-integration and multifunctions.
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Affiliation(s)
- Hechun Cao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Tao Hu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jiyue Zhang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Dongyang Zhao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Yan Chen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
| | - Xudong Wang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jing Yang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Yuanyuan Zhang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuanShanxi030006P. R. China
| | - Wei Bai
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Hong Shen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jianlu Wang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
- Frontier Institute of Chip and SystemFudan UniversityShanghai200433P. R. China
| | - Junhao Chu
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
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Ma Y, Bao A, Guo X, Wang J. Carrier mobility and optical properties of a type-II GaSe/ZnS heterostructure as a photocatalyst: a first-principles study. Phys Chem Chem Phys 2024; 26:14980-14990. [PMID: 38739457 DOI: 10.1039/d4cp00972j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
In this paper, a new GaSe/ZnS van der Waals heterostructure (vdWH) was constructed and a systematic analysis of the electronic structure, interfacial properties, and transport and photocatalytic capacity of the GaSe/ZnS vdWH was performed by using first-principles calculations. It was found that the heterostructure exhibited excellent photocatalytic performance for water splitting. The direct band gap of the heterostructure calculated using the hybrid HSE06 functional was 2.19 eV, which had a good visible light absorption ability. The electronic structure of the type-II band arrangement effectively reduced the recombination of electron-hole pairs. The heterostructure also showed excellent transport ability, and the carrier mobility of electrons and holes along different directions was greatly improved. Additionally, as the electric field strength increased, the band gap width of the GaSe/ZnS vdWH narrowed and the heterostructure characteristics transitioned from semiconductor to metal properties, which were attributed to the appearance of near-free electronic (NFE) states induced by the strong electric field. Meanwhile, the optical absorption capacity of the heterostructure was greatly improved compared to the ZnS monolayer, reaching 1.44 × 105 cm-1 at an incident photon energy of 8.65 eV. Therefore, the GaSe/ZnS vdWH was proved to be an excellent photocatalytic material for water splitting in the present study.
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Affiliation(s)
- Yongqiang Ma
- National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan, 030051, China.
| | - Aida Bao
- National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan, 030051, China.
| | - Xin Guo
- National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan, 030051, China.
| | - Jie Wang
- National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan, 030051, China.
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Xu K, Zou Z, Li W, Zhang L, Ge M, Wang T, Du W. Strong Linearly Polarized Light Emission by Coupling Out-of-Plane Exciton to Anisotropic Gap Plasmon Nanocavity. NANO LETTERS 2024; 24:3647-3653. [PMID: 38488282 DOI: 10.1021/acs.nanolett.3c04899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
With exceptional quantum confinement, 2D monolayer semiconductors support a strong excitonic effect, making them an ideal platform for exploring light-matter interactions and as building blocks for novel optoelectronic devices. Different from the well-known in-plane excitons in transition metal dichalcogenides (TMD), the out-of-plane excitons in indium selenide (InSe) usually show weak emission, which limits their applications as light sources. Here, by embedding InSe in an anisotropic gap plasmon nanocavity, we have realized plasmon-enhanced linearly polarized photoluminescence with an anisotropic ratio up to ∼140, corresponding to degree of polarization (DoP) of ∼98.6%. Such polarization selectivity, originating from the polarization-dependent plasmonic enhancement supported by the "nanowire-on-mirror" nanocavity, can be well tuned by the InSe thickness. Moreover, we have also realized an InSe-based light-emitting diode with polarized electroluminescence. Our research highlights the role of excitonic dipole orientation in designing nanophotonic devices and paves the way for developing InSe-based optoelectronic devices with polarization control.
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Affiliation(s)
- Kai Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Zhen Zou
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Wenfei Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Lan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Maowen Ge
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Tao Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Wei Du
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
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5
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Zhao M, Casiraghi C, Parvez K. Electrochemical exfoliation of 2D materials beyond graphene. Chem Soc Rev 2024; 53:3036-3064. [PMID: 38362717 DOI: 10.1039/d3cs00815k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/17/2024]
Abstract
After the discovery of graphene in 2004, the field of atomically thin crystals has exploded with the discovery of thousands of 2-dimensional materials (2DMs) with unique electronic and optical properties, by making them very attractive for a broad range of applications, from electronics to energy storage and harvesting, and from sensing to biomedical applications. In order to integrate 2DMs into practical applications, it is crucial to develop mass scalable techniques providing crystals of high quality and in large yield. Electrochemical exfoliation is one of the most promising methods for producing 2DMs, as it enables quick and large-scale production of solution processable nanosheets with a thickness well below 10 layers and lateral size above 1 μm. Originally, this technique was developed for the production of graphene; however, in the last few years, this approach has been successfully extended to other 2DMs, such as transition metal dichalcogenides, black phosphorous, hexagonal boron nitride, MXenes and many other emerging 2D materials. This review first provides an introduction to the fundamentals of electrochemical exfoliation and then it discusses the production of each class of 2DMs, by introducing their properties and giving examples of applications. Finally, a summary and perspective are given to address some of the challenges in this research area.
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Affiliation(s)
- Minghao Zhao
- Department of Chemistry, University of Manchester, M13 9PL Manchester, UK.
| | - Cinzia Casiraghi
- Department of Chemistry, University of Manchester, M13 9PL Manchester, UK.
| | - Khaled Parvez
- Department of Chemistry, University of Manchester, M13 9PL Manchester, UK.
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Liu L, Liu K, Zhai T. Emerging van der Waals Dielectrics of Inorganic Molecular Crystals for 2D Electronics. ACS NANO 2024; 18:6733-6739. [PMID: 38335468 DOI: 10.1021/acsnano.3c10137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
In the landscape of continuous downscaling metal-oxide-semiconductor field-effect transistors, two-dimensional (2D) semiconductors with atomic thinness emerge as promising channel materials for ultimate scaled devices. However, integrating compatible dielectrics with 2D semiconductors, particularly in a scalable way, remains a critical challenge that hinders the development of 2D devices. Recently, 2D inorganic molecular crystals (IMCs), which are free of dangling bonds and possess excellent dielectric properties and simplicity for scalable fabrication, have emerged as alternatives for gate dielectric integration in 2D devices. In this Perspective, we start with the introduction of structure and synthesis methods of IMCs and then discuss the explorations of using IMCs as the dielectrics, as well as some remaining relevant issues to be unraveled. Moreover, we look at the future opportunities of IMC dielectrics in 2D devices both for practical applications and fundamental research.
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Affiliation(s)
- Lixin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Sciences and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
- Optics Valley Laboratory, Hubei 430074, P. R. China
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7
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Li Z, Liu J, Ou H, Hu Y, Zhu J, Huang J, Liu H, Tu Y, Qi D, Hao Q, Zhang W. Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:382. [PMID: 38392755 PMCID: PMC10892934 DOI: 10.3390/nano14040382] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Revised: 02/16/2024] [Accepted: 02/17/2024] [Indexed: 02/24/2024]
Abstract
Two-dimensional material indium selenide (InSe) holds great promise for applications in electronics and optoelectronics by virtue of its fascinating properties. However, most multilayer InSe-based transistors suffer from extrinsic scattering effects from interface disorders and the environment, which cause carrier mobility and density fluctuations and hinder their practical application. In this work, we employ the non-destructive method of van der Waals (vdW) integration to improve the electron mobility of back-gated multilayer InSe FETs. After introducing the hexagonal boron nitride (h-BN) as both an encapsulation layer and back-gate dielectric with the vdW interface, as well as graphene serving as a buffer contact layer, the electron mobilities of InSe FETs are substantially enhanced. The vdW-integrated devices exhibit a high electron mobility exceeding 103 cm2 V-1 s-1 and current on/off ratios of ~108 at room temperature. Meanwhile, the electron densities are found to exceed 1012 cm-2. In addition, the fabricated devices show an excellent stability with a negligible electrical degradation after storage in ambient conditions for one month. Electrical transport measurements on InSe FETs in different configurations suggest that a performance enhancement with vdW integration should arise from a sufficient screening effect on the interface impurities and an effective passivation of the air-sensitive surface.
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Affiliation(s)
- Zhiwei Li
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China; (Z.L.); (J.L.); (H.O.); (Y.H.); (J.Z.); (J.H.); (H.L.); (Y.T.)
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Jidong Liu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China; (Z.L.); (J.L.); (H.O.); (Y.H.); (J.Z.); (J.H.); (H.L.); (Y.T.)
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Haohui Ou
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China; (Z.L.); (J.L.); (H.O.); (Y.H.); (J.Z.); (J.H.); (H.L.); (Y.T.)
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Yutao Hu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China; (Z.L.); (J.L.); (H.O.); (Y.H.); (J.Z.); (J.H.); (H.L.); (Y.T.)
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Jiaqi Zhu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China; (Z.L.); (J.L.); (H.O.); (Y.H.); (J.Z.); (J.H.); (H.L.); (Y.T.)
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Jiarui Huang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China; (Z.L.); (J.L.); (H.O.); (Y.H.); (J.Z.); (J.H.); (H.L.); (Y.T.)
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Haolin Liu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China; (Z.L.); (J.L.); (H.O.); (Y.H.); (J.Z.); (J.H.); (H.L.); (Y.T.)
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Yudi Tu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China; (Z.L.); (J.L.); (H.O.); (Y.H.); (J.Z.); (J.H.); (H.L.); (Y.T.)
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Dianyu Qi
- Zhejiang Technology Innovation Center of CMOS IC Manufacturing Process and Design, College of Integrated Circuits, Zhejiang University, Hangzhou 311200, China;
| | - Qiaoyan Hao
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China; (Z.L.); (J.L.); (H.O.); (Y.H.); (J.Z.); (J.H.); (H.L.); (Y.T.)
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Wenjing Zhang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China; (Z.L.); (J.L.); (H.O.); (Y.H.); (J.Z.); (J.H.); (H.L.); (Y.T.)
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
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8
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Wong LW, Yang K, Han W, Zheng X, Wong HY, Tsang CS, Lee CS, Lau SP, Ly TH, Yang M, Zhao J. Deciphering the ultra-high plasticity in metal monochalcogenides. NATURE MATERIALS 2024; 23:196-204. [PMID: 38191634 DOI: 10.1038/s41563-023-01788-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Accepted: 12/11/2023] [Indexed: 01/10/2024]
Abstract
The quest for electronic devices that offer flexibility, wearability, durability and high performance has spotlighted two-dimensional (2D) van der Waals materials as potential next-generation semiconductors. Especially noteworthy is indium selenide, which has demonstrated surprising ultra-high plasticity. To deepen our understanding of this unusual plasticity in 2D van der Waals materials and to explore inorganic plastic semiconductors, we have conducted in-depth experimental and theoretical investigations on metal monochalcogenides (MX) and transition metal dichalcogenides (MX2). We have discovered a general plastic deformation mode in MX, which is facilitated by the synergetic effect of phase transitions, interlayer gliding and micro-cracks. This is in contrast to crystals with strong atomic bonding, such as metals and ceramics, where plasticity is primarily driven by dislocations, twinning or grain boundaries. The enhancement of gliding barriers prevents macroscopic fractures through a pinning effect after changes in stacking order. The discovery of ultra-high plasticity and the phase transition mechanism in 2D MX materials holds significant potential for the design and development of high-performance inorganic plastic semiconductors.
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Affiliation(s)
- Lok Wing Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ke Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Wei Han
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Xiaodong Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Hok Yin Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Chi Shing Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Chun-Sing Lee
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China.
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, China.
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, China.
| | - Ming Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
- The Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
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9
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Liu Q, Cui S, Bian R, Pan E, Cao G, Li W, Liu F. The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications. ACS NANO 2024; 18:1778-1819. [PMID: 38179983 DOI: 10.1021/acsnano.3c05711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.
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Affiliation(s)
- Qing Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Silin Cui
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Renji Bian
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Er Pan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, 615013 Xi'an, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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10
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Lee YT, Huang YT, Chiu SP, Wang RT, Taniguchi T, Watanabe K, Sankar R, Liang CT, Wang WH, Yeh SS, Lin JJ. Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1066-1073. [PMID: 38113538 DOI: 10.1021/acsami.3c14312] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Two-dimensional (2D) transistors are promising for potential applications in next-generation semiconductor chips. Owing to the atomically thin thickness of 2D materials, the carrier scattering from interfacial Coulomb scatterers greatly suppresses the carrier mobility and hampers transistor performance. However, a feasible method to quantitatively determine relevant Coulomb scattering parameters from interfacial long-range scatterers is largely lacking. Here, we demonstrate a method to determine the Coulomb scattering strength and the density of Coulomb scattering centers in InSe transistors by comprehensively analyzing the low-frequency noise and transport characteristics. Moreover, the relative contributions from long-range and short-range scattering in the InSe transistors can be distinguished. This method is employed to make InSe transistors consisting of various interfaces a model system, revealing the profound effects of different scattering sources on transport characteristics and low-frequency noise. Quantitatively accessing the scattering parameters of 2D transistors provides valuable insight into engineering the interfaces of a wide spectrum of ultrathin-body transistors for high-performance electronics.
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Affiliation(s)
- Yi-Te Lee
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yu-Ting Huang
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Shao-Pin Chiu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Ruey-Tay Wang
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Raman Sankar
- Institute of Physics, Academia Sinica, Taipei 106, Taiwan
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Wei-Hua Wang
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Sheng-Shiuan Yeh
- Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Juhn-Jong Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
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11
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Cao W, Bu H, Vinet M, Cao M, Takagi S, Hwang S, Ghani T, Banerjee K. The future transistors. Nature 2023; 620:501-515. [PMID: 37587295 DOI: 10.1038/s41586-023-06145-x] [Citation(s) in RCA: 22] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/19/2020] [Accepted: 04/27/2023] [Indexed: 08/18/2023]
Abstract
The metal-oxide-semiconductor field-effect transistor (MOSFET), a core element of complementary metal-oxide-semiconductor (CMOS) technology, represents one of the most momentous inventions since the industrial revolution. Driven by the requirements for higher speed, energy efficiency and integration density of integrated-circuit products, in the past six decades the physical gate length of MOSFETs has been scaled to sub-20 nanometres. However, the downscaling of transistors while keeping the power consumption low is increasingly challenging, even for the state-of-the-art fin field-effect transistors. Here we present a comprehensive assessment of the existing and future CMOS technologies, and discuss the challenges and opportunities for the design of FETs with sub-10-nanometre gate length based on a hierarchical framework established for FET scaling. We focus our evaluation on identifying the most promising sub-10-nanometre-gate-length MOSFETs based on the knowledge derived from previous scaling efforts, as well as the research efforts needed to make the transistors relevant to future logic integrated-circuit products. We also detail our vision of beyond-MOSFET future transistors and potential innovation opportunities. We anticipate that innovations in transistor technologies will continue to have a central role in driving future materials, device physics and topology, heterogeneous vertical and lateral integration, and computing technologies.
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Affiliation(s)
- Wei Cao
- Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, USA
| | - Huiming Bu
- Advanced Logic and Memory Technology, IBM Research, Albany, NY, USA
| | - Maud Vinet
- Université Grenoble Alpes, CEA-LETI, Grenoble, France
| | - Min Cao
- Pathfinding, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Shinichi Takagi
- Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan
| | - Sungwoo Hwang
- Samsung Advanced Institute of Technology, Suwon-si, Korea
| | - Tahir Ghani
- Pathfinding and Technology Definition, Intel Corporation, Hillsboro, OR, USA
| | - Kaustav Banerjee
- Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, USA.
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12
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Bao X, Wu X, Ke Y, Wu K, Jiang C, Wu B, Li J, Yue S, Zhang S, Shi J, Du W, Zhong Y, Hu H, Bai P, Gong Y, Zhang Q, Zhang W, Liu X. Giant Out-of-Plane Exciton Emission Enhancement in Two-Dimensional Indium Selenide via a Plasmonic Nanocavity. NANO LETTERS 2023; 23:3716-3723. [PMID: 37125916 DOI: 10.1021/acs.nanolett.2c04902] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Out-of-plane (OP) exciton-based emitters in two-dimensional semiconductor materials are attractive candidates for novel photonic applications, such as radially polarized sources, integrated photonic chips, and quantum communications. However, their low quantum efficiency resulting from forbidden transitions limits their practicality. In this work, we achieve a giant enhancement of up to 34000 for OP exciton emission in indium selenide (InSe) via a designed Ag nanocube-over-Au film plasmonic nanocavity. The large photoluminescence enhancement factor (PLEF) is attributed to the induced OP local electric field (Ez) within the nanocavity, which facilitates effective OP exciton-plasmon interaction and subsequent tremendous enhancement. Moreover, the nanoantenna effect resulting from the effective interaction improves the directivity of spontaneous radiation. Our results not only reveal an effective photoluminescence enhancement approach for OP excitons but also present an avenue for designing on-chip photonic devices with an OP dipole orientation.
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Affiliation(s)
- Xiaotian Bao
- Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing 100875, People's Republic of China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Xianxin Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yuxuan Ke
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Keming Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Chuanxiu Jiang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Bo Wu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Jing Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shuai Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yangguang Zhong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Huatian Hu
- Hubei Key Laboratory of Optical Information and Pattern Recognition, Wuhan Institute of Technology, Wuhan 430205, People's Republic of China
| | - Peng Bai
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Yiyang Gong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Wenkai Zhang
- Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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13
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Bian R, Cao G, Pan E, Liu Q, Li Z, Liang L, Wu Q, Ang LK, Li W, Zhao X, Liu F. High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning. NANO LETTERS 2023; 23:4595-4601. [PMID: 37154868 DOI: 10.1021/acs.nanolett.3c01053] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/off ratio and a narrow memory window, which restricts its practical application. To address the issue, we propose a facile strategy by regulating the Schottky barrier in sliding ferroelectric semiconductor transistors based on γ-InSe, in which a high performance with a large on/off ratio (106) and a wide memory window (4.5 V) was ultimately acquired. Additionally, the memory window of the device can be further modulated by electrostatic doping or light excitation. These results open up new ways for designing novel ferroelectric devices based on emerging sliding ferroelectricity.
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Affiliation(s)
- Renji Bian
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 324003, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, Xi Chang 615013, China
| | - Er Pan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qing Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zefen Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Lei Liang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qingyun Wu
- Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore
| | - Lay Kee Ang
- Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 324003, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
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14
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Lu J, He Y, Ma C, Ye Q, Yi H, Zheng Z, Yao J, Yang G. Ultrabroadband Imaging Based on Wafer-Scale Tellurene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211562. [PMID: 36893428 DOI: 10.1002/adma.202211562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2022] [Revised: 03/02/2023] [Indexed: 05/19/2023]
Abstract
High-resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it is established as an important approach toward high-sensitivity information extraction/storage. However, due to the incompatibility between non-silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of ultrabroadband imaging is severely impeded. Herein, the monolithic integration of wafer-scale tellurene photoelectric functional units by exploiting room-temperature pulsed-laser deposition is realized. Taking advantage of the surface plasmon polaritons of tellurene, which results in the thermal perturbation promoted exciton separation, in situ formation of out-of-plane homojunction and negative expansion promoted carrier transport, as well as the band bending promoted electron-hole pair separation enabled by the unique interconnected nanostrip morphology, the tellurene photodetectors demonstrate wide-spectrum photoresponse from 370.6 to 2240 nm and unprecedented photosensitivity with the optimized responsivity, external quantum efficiency and detectivity of 2.7 × 107 A W-1 , 8.2 × 109 % and 4.5 × 1015 Jones. An ultrabroadband imager is demonstrated and high-resolution photoelectric imaging is realized. The proof-of-concept wafer-scale tellurene-based ultrabroadband photoelectric imaging system depicts a fascinating paradigm for the development of an advanced 2D imaging platform toward next-generation intelligent equipment.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Yan He
- College of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong, 525000, P. R. China
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Huaxin Yi
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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15
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Zhao L, Jiang Y, Li C, Liang Y, Wei Z, Wei X, Zhang Q. Probing Anisotropic Deformation and Near-Infrared Emission Tuning in Thin-Layered InSe Crystal under High Pressure. NANO LETTERS 2023; 23:3493-3500. [PMID: 37023469 DOI: 10.1021/acs.nanolett.3c00593] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Indium selenide (InSe) exhibits high lattice compressibility and an extraordinary capability of tailoring the optical band gap under pressure beyond other 2D materials. Herein, by applying hydrostatic pressure via a diamond anvil cell, we revealed an anisotropic deformation dynamic and efficient manipulation of near-infrared light emission in thin-layered InSe strongly correlated to layer numbers (N = 5-30). As N > 20, the InSe lattice is compressed in all directions, and the intralayer compression leads to widening of the band gap, resulting in an emission blue shift (∼120 meV at 1.5 GPa). In contrast, as N ≤ 15, an efficient emission red shift is observed from band gap shrinkage (rate of 100 meV GPa-1), which is attributed to the predominant uniaxial interlayer compression because of the high strain resistance along the InSe-diamond interface. These findings advance the understanding of pressure-induced lattice deformation and optical transition evolution in InSe and could be applied to other 2D materials.
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Affiliation(s)
- Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
- International school for optoelectronic engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
| | - Yingjie Jiang
- State Key Laboratory for Turbulence and Complex Systems, Department of Mechanics and Engineering Science, BIC-ESAT, College of Engineering, Peking University, Beijing 100871, China
| | - Chun Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yin Liang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Xiaoding Wei
- State Key Laboratory for Turbulence and Complex Systems, Department of Mechanics and Engineering Science, BIC-ESAT, College of Engineering, Peking University, Beijing 100871, China
- Peking University Nanchang Innovation Institute, Nanchang 330000, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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16
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Bikerouin M, Chdil O, Balli M. Solar cells based on 2D Janus group-III chalcogenide van der Waals heterostructures. NANOSCALE 2023; 15:7126-7138. [PMID: 37000599 DOI: 10.1039/d2nr06200c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Janus monolayers, realized by breaking the vertical structural symmetry of two-dimensional (2D) materials, pave the way for a new era of high-quality and high-performance atomically-thin vertical p-n heterojunction solar cells. Herein, employing first-principles computations, Janus group-III chalcogenide monolayers, MX, M2XY, MM'X2 and MM'XY (M, M' = Ga, In; X, Y = S, Se, Te), are deeply investigated in view of their implementation in 2D photovoltaic systems. Their stability analysis reveals that the 21 investigated monolayers are energetically, thermodynamically, mechanically, dynamically, and thermally stable, confirming their growth feasibility under ambient conditions. Furthermore, owing to their optimal band gap, high charge carrier mobilities, and strong light absorption, 2D Janus group-III monolayers are predicted as promising candidates for 2D excitonic solar cell applications. In fact, 46 type-II van der Waals (vdW) heterostructures with a lattice mismatch of less than 5% are identified by analyzing the band alignments of the investigated monolayers obtained through the HSE + SOC approach. In particular, 7 vertical vdW heterojunctions with a power conversion efficiency (PCE) higher than 20% are predicted and might be the focus of future experimental and theoretical studies. To further confirm the type II band alignment, the Ga2STe-GaInS2 vdW heterostructure, which reveals the highest PCE of 23.69%, is thoroughly investigated. Our results not only predict and evaluate stable 2D Janus group-III chalcogenide monolayers and vdW heterostructures, but also suggest that they could be used as materials for next-generation optoelectronic and photovoltaic devices.
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Affiliation(s)
- M Bikerouin
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
| | - O Chdil
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
| | - M Balli
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
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17
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Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors. Polymers (Basel) 2023; 15:polym15061395. [PMID: 36987175 PMCID: PMC10051946 DOI: 10.3390/polym15061395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Revised: 03/04/2023] [Accepted: 03/08/2023] [Indexed: 03/16/2023] Open
Abstract
Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate dielectric materials, including (1) solution-based polymer dielectrics, (2) vacuum-deposited polymer dielectrics, (3) ferroelectric polymers, and (4) ion gels. Exploiting appropriate materials and corresponding processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. Furthermore, FET-based functional electronic devices, such as flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics, are highlighted in this review. This paper also outlines challenges and opportunities in order to help develop high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realize their practical applications.
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18
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Batool S, Idrees M, Han ST, Roy VAL, Zhou Y. Electrical Contacts With 2D Materials: Current Developments and Future Prospects. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206550. [PMID: 36587964 DOI: 10.1002/smll.202206550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Current electrical contact models are occasionally insufficient at the nanoscale owing to the wide variations in outcomes between 2D mono and multi-layered and bulk materials that result from their distinctive electrostatics and geometries. Contrarily, devices based on 2D semiconductors present a significant challenge due to the requirement for electrical contact with resistances close to the quantum limit. The next generation of low-power devices is already hindered by the lack of high-quality and low-contact-resistance contacts on 2D materials. The physics and materials science of electrical contact resistance in 2D materials-based nanoelectronics, interface configurations, charge injection mechanisms, and numerical modeling of electrical contacts, as well as the most pressing issues that need to be resolved in the field of research and development, will all be covered in this review.
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Affiliation(s)
- Saima Batool
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Muhammad Idrees
- Additive Manufacturing Institute, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronics Science & Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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19
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Guo H, Yin Y, Yu W, Robertson J, Liu S, Zhang Z, Guo Y. Quantum transport of sub-5 nm InSe and In 2SSe monolayers and their heterostructure transistors. NANOSCALE 2023; 15:3496-3503. [PMID: 36723054 DOI: 10.1039/d2nr07180k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The emerging two-dimensional (2D) semiconductors hold a promising prospect for sustaining Moore's law benefitting from the excellent device electrostatics with narrowed channel length. Here, the performance limits of sub-5 nm InSe and In2SSe metal-oxide-semiconductor field-effect transistors (MOSFETs) are explored by ab initio quantum transport simulations. The van der Waals heterostructures prepared by assembling different two-dimensional materials have emerged as a new design of artificial materials with promising physical properties. In this study, device performance was investigated utilizing InSe/In2SSe van der Waals heterostructure as the channel material. Both the monolayer and heterostructure devices can scale Moore's law down to 5 nm. A heterostructure transistor exhibits a higher on-state current and faster switching speed compared with isolated monolayer transistors. This work proves that the sub-5 nm InSe/In2SSe MOSFET can satisfy both the low power and high-performance requirements for the international technology roadmap for semiconductors in the next decade and can provide a feasible approach for enhancing device performance.
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Affiliation(s)
- Hailing Guo
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China.
| | - Yinheng Yin
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China.
| | - Wei Yu
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China.
| | - John Robertson
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China.
| | - Sheng Liu
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China.
| | - Zhaofu Zhang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China.
| | - Yuzheng Guo
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China.
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20
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Wan W, Guo R, Ge Y, Liu Y. Carrier and phonon transport in 2D InSe and its Janus structures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:133001. [PMID: 36634370 DOI: 10.1088/1361-648x/acb2a5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2022] [Accepted: 01/12/2023] [Indexed: 06/17/2023]
Abstract
Recently, two-dimensional (2D) Indium Selenide (InSe) has been receiving much attention in the scientific community due to its reduced size, extraordinary physical properties, and potential applications in various fields. In this review, we discussed the recent research advancement in the carrier and phonon transport properties of 2D InSe and its related Janus structures. We first introduced the progress in the synthesis of 2D InSe. We summarized the recent experimental and theoretical works on the carrier mobility, thermal conductivity, and thermoelectric characteristics of 2D InSe. Based on the Boltzmann transport equation (BTE), the mechanisms underlying carrier or phonon scattering of 2D InSe were discussed in detail. Moreover, the structural and transport properties of Janus structures based on InSe were also presented, with an emphasis on the theoretical simulations. At last, we discussed the prospects for continued research of 2D InSe.
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Affiliation(s)
- Wenhui Wan
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Rui Guo
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yanfeng Ge
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yong Liu
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
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21
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Ji H, Wang Z, Wang S, Wang C, Zhang K, Zhang Y, Han L. Highly Stable InSe-FET Biosensor for Ultra-Sensitive Detection of Breast Cancer Biomarker CA125. BIOSENSORS 2023; 13:bios13020193. [PMID: 36831959 PMCID: PMC9954013 DOI: 10.3390/bios13020193] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 01/15/2023] [Accepted: 01/19/2023] [Indexed: 05/16/2023]
Abstract
Two-dimensional materials-based field-effect transistors (FETs) are promising biosensors because of their outstanding electrical properties, tunable band gap, high specific surface area, label-free detection, and potential miniaturization for portable diagnostic products. However, it is crucial for FET biosensors to have a high electrical performance and stability degradation in liquid environments for their practical application. Here, a high-performance InSe-FET biosensor is developed and demonstrated for the detection of the CA125 biomarker in clinical samples. The InSe-FET is integrated with a homemade microfluidic channel, exhibiting good electrical stability during the liquid channel process because of the passivation effect on the InSe channel. The InSe-FET biosensor is capable of the quantitative detection of the CA125 biomarker in breast cancer in the range of 0.01-1000 U/mL, with a detection time of 20 min. This work provides a universal detection tool for protein biomarker sensing. The detection results of the clinical samples demonstrate its promising application in early screenings of major diseases.
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Affiliation(s)
- Hao Ji
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China
| | - Zhenhua Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China
| | - Shun Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China
| | - Chao Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China
| | - Kai Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China
- Correspondence: (Y.Z.); (L.H.)
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China
- Shenzhen Research Institute of Shandong University, Shenzhen 518057, China
- Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application, Ji’nan 250100, China
- Correspondence: (Y.Z.); (L.H.)
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22
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Shang H, Hu Y, Gao F, Dai M, Zhang S, Wang S, Ouyang D, Li X, Song X, Gao B, Zhai T, Hu P. Carrier Recirculation Induced High-Gain Photodetector Based on van der Waals Heterojunction. ACS NANO 2022; 16:21293-21302. [PMID: 36468786 DOI: 10.1021/acsnano.2c09366] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) materials have attracted great attention in the field of photodetection due to their excellent electronic and optoelectronic properties. However, the weak optical absorption caused by atomically thin layers and the short lifetime of photocarriers limit their optoelectronic performance, especially for weak light detection. In this work, we design a high-gain photodetector induced by carrier recirculation based on a vertical InSe/GaSe heterojunction. In this architecture, the photogenerated holes are trapped in GaSe due to the built-in electric field, suppressing the recombination rate of photocarriers, so the electrons can recirculate for multiple times in the InSe channel following the generation of a single electron-hole pair, resulting a high photoconductive gain (107). The responsivity and detectivity of the InSe/GaSe heterojunction can reach 1037 A/W and 8.6 × 1013 Jones, which are 1 order of magnitude higher than those of individual InSe. More importantly, the InSe/GaSe heterojunction can respond to weaker light (1 μW/cm2) compared to individual InSe (10 μW/cm2). Utilizing GaSe as the channel and InSe as the electrons trapped layer, the same experimental phenomenon is achieved. This work can provide an approach for designing a highly sensitive device utilizing a 2D van der Waals heterojunction, and it also possesses wide applicability for other materials.
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Affiliation(s)
- Huiming Shang
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin150080,China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Yunxia Hu
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Feng Gao
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Shichao Zhang
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin150080,China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Shuai Wang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Decai Ouyang
- School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan430074, P. R. China
| | - Xinyu Li
- School of Physics, Harbin Institute of Technology, Harbin150080, China
| | - Xin Song
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin150080,China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Bo Gao
- School of Physics, Harbin Institute of Technology, Harbin150080, China
| | - Tianyou Zhai
- School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan430074, P. R. China
| | - PingAn Hu
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin150080,China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
- State Key Laboratory of Robotics and Systems, Harbin Institute of Technology, Harbin150080, China
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23
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Zhao Y, Cho J, Choi M, Ó Coileáin C, Arora S, Hung KM, Chang CR, Abid M, Wu HC. Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS 2 Self-Powered Photodetector. ACS NANO 2022; 16:17347-17355. [PMID: 36153977 DOI: 10.1021/acsnano.2c08177] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
van der Waals heterojunctions with tunable polarity are being actively explored for more Moore and more-than-Moore device applications, as they can greatly simplify circuit design. However, inadequate control over the multifunctional operational states is still a challenge in their development. Here, we show that a vertically stacked InSe/SnS2 van der Waals heterojunction exhibits type-II band alignment, and its polarity can be tuned by an external electric field and by the wavelength and intensity of an illuminated light source. Moreover, such SnS2/InSe diodes are self-powered broadband photodetectors with good performance. The self-powered performance can be further enhanced significantly with gas adsorption, and the device can be quickly restored to the state before gas injection using a gate voltage pulse. Our results suggest a way to achieve and design multiple functions in a single device with multifield coupling of light, electrical field, gas, or other external stimulants.
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Affiliation(s)
- Yue Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
| | - Miri Choi
- Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea
| | - Cormac Ó Coileáin
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Sunil Arora
- Centre for Nanoscience and Nanotechnology, Panjab University, Chandigarh 160014, India
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Ching-Ray Chang
- Quantum information center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
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24
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A non-two-dimensional van der Waals InSe semispherical array grown by vapor-liquid-solid method for hydrogen evolution. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2022.107826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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25
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Wang Y, Gao Q, Li W, Cheng P, Zhang YQ, Feng B, Hu Z, Wu K, Chen L. Nearly Ideal Two-Dimensional Electron Gas Hosted by Multiple Quantized Kronig-Penney States Observed in Few-Layer InSe. ACS NANO 2022; 16:13014-13021. [PMID: 35943244 DOI: 10.1021/acsnano.2c05556] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A theoretical ideal two-dimensional electron gas (2DEG) was characterized by a flat density of states independent of energy. Compared with conventional two-dimensional free-electron systems in semiconductor heterojunctions and noble metal surfaces, we report here the achievement of ideal 2DEG with multiple quantized states in few-layer InSe films. The multiple quantum well states (QWSs) in few-layer InSe films are found, and the number of QWSs is strictly equal to the number of atomic layers. The multiple stair-like DOS as well as multiple bands with parabolic dispersion both characterize ideal 2DEG features in these QWSs. Density functional theory calculations and numerical simulations based on quasi-bounded square potential wells described as the Kronig-Penney model provide a consistent explanation of 2DEG in the QWSs. Our work demonstrates that 2D van der Waals materials are ideal systems for realizing 2DEG hosted by multiple quantized Kronig-Penney states, and the semiconducting nature of the material provides a better chance for construction of high-performance electronic devices utilizing these states, for example, superlattice devices with negative differential resistance.
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Affiliation(s)
- Yu Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Qian Gao
- School of Physics, Nankai University, Tianjin 300071, China
| | - Wenhui Li
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Peng Cheng
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yi-Qi Zhang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Baojie Feng
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Zhenpeng Hu
- School of Physics, Nankai University, Tianjin 300071, China
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Lan Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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26
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Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE. NANOMATERIALS 2022; 12:nano12142435. [PMID: 35889659 PMCID: PMC9316289 DOI: 10.3390/nano12142435] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Revised: 07/07/2022] [Accepted: 07/13/2022] [Indexed: 02/01/2023]
Abstract
Single-phase two-dimensional (2D) indium monoselenide (γ-InSe) film is successfully grown via solid phase epitaxy in the molecular beam epitaxy (MBE) system. Having high electron mobility and high photoresponsivity, ultrathin 2D γ-InSe semiconductors are attractive for future field-effect transistor and optoelectronic devices. However, growing single-phase γ-InSe film is a challenge due to the polymorphic nature of indium selenide (γ-InSe, α-In2Se3, β-In2Se3, γ-In2Se3, etc.). In this work, the 2D α-In2Se3 film was first grown on a sapphire substrate by MBE. Then, the high In/Se ratio sources were deposited on the α-In2Se3 surface, and an γ-InSe crystal emerged via solid-phase epitaxy. After 50 min of deposition, the initially 2D α-In2Se3 phase was also transformed into a 2D γ-InSe crystal. The phase transition from 2D α-In2Se3 to γ-InSe was confirmed by Raman, XRD, and TEM analysis. The structural ordering of 2D γ-InSe film was characterized by synchrotron-based grazing-incidence wide-angle X-ray scattering (GIWAXS).
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27
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Cui X, Du M, Das S, Yoon HH, Pelgrin VY, Li D, Sun Z. On-chip photonics and optoelectronics with a van der Waals material dielectric platform. NANOSCALE 2022; 14:9459-9465. [PMID: 35735657 PMCID: PMC9261272 DOI: 10.1039/d2nr01042a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/22/2022] [Accepted: 05/29/2022] [Indexed: 06/15/2023]
Abstract
During the last few decades, photonic integrated circuits have increased dramatically, facilitating many high-performance applications, such as on-chip sensing, data processing, and inter-chip communications. The currently dominating material platforms (i.e., silicon, silicon nitride, lithium niobate, and indium phosphide), which have exhibited great application successes, however, suffer from their own disadvantages, such as the indirect bandgap of silicon for efficient light emission, and the compatibility challenges of indium phosphide with the silicon industry. Here, we report a new dielectric platform using nanostructured bulk van der Waals materials. On-chip light propagation, emission, and detection are demonstrated by taking advantage of different van der Waals materials. Low-loss passive waveguides with MoS2 and on-chip light sources and photodetectors with InSe have been realised. Our proof-of-concept demonstration of passive and active on-chip photonic components endorses van der Waals materials for offering a new dielectric platform with a large material-selection degree of freedom and unique properties toward close-to-atomic scale manufacture of on-chip photonic and optoelectronic devices.
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Affiliation(s)
- Xiaoqi Cui
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Mingde Du
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
| | - Susobhan Das
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
| | - Hoon Hahn Yoon
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Vincent Yves Pelgrin
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
| | - Diao Li
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
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28
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Li DJ, Tian YB, Lin Q, Zhang J, Gu ZG. Optimizing Photodetectors in Two-Dimensional Metal-Metalloporphyrinic Framework Thin Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:33548-33554. [PMID: 35770297 DOI: 10.1021/acsami.2c07686] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) metalloporphyrin-based MOF thin films possessing abundant π-π interactions are promising materials for photoelectronic devices, but no reports on fabrication of photodetectors are available so far. Herein, a series of 2D MOF Zn2[TCPP(M)] (named ZnTCPP(M); TCPP = 5,10,15,20-tetrakis(4-carboxyphenyl)porphyrin; M = Zn, Mn, Fe, and H2) films with [001] orientation are fabricated on SiO2/Si substrates by the liquid-phase epitaxial (LPE) layer-by-layer (lbl) approach and further assembled to photodetectors. The obtained ZnTCPP(M)-based photodetectors exhibit an excellent photoresponse due to abundant π-π stacking between the MOF layers. Moreover, the metalloporphyrinic groups in ZnTCPP(M) have a significant influence on modulating the photoresponse of the photodetectors, among which the prepared ZnTCPP(Zn) film-based device exhibits the best photodetection performance with a high on/off ratio of 2.3 × 104, responsivity (Rλ, up to 10.3 A W-1), short rise/fall times (0.09/0.07 s), and a large detectivity (D*) of 8.1 × 1013 Jones. Density functional theory (DFT) calculations reveal that the perturbation of the ring π-electron system and the introduction of low-lying states as well as the large delocalization of the metalloporphyrinic group will adjust the photodetection performance of ZnTCPP(M) films. These results will provide a new understanding of the modulation of 2D metalloporphyrinic MOFs toward photodetection performance and perspective for the fabrication of photoelectronic devices.
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Affiliation(s)
- De-Jing Li
- Fujian Engineering and Research Centre of New Chinese Lacquer Material, College of Materials and Chemical Engineering, Minjiang University, Fuzhou, Fujian 350108, PR China
| | - Yi-Bo Tian
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P.R. China
- Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany
| | - Qi Lin
- Fujian Engineering and Research Centre of New Chinese Lacquer Material, College of Materials and Chemical Engineering, Minjiang University, Fuzhou, Fujian 350108, PR China
| | - Jian Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P.R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Zhi-Gang Gu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P.R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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29
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Yang X, Liu X, Qu L, Gao F, Xu Y, Cui M, Yu H, Wang Y, Hu P, Feng W. Boosting Photoresponse of Self-Powered InSe-Based Photoelectrochemical Photodetectors via Suppression of Interface Doping. ACS NANO 2022; 16:8440-8448. [PMID: 35435675 DOI: 10.1021/acsnano.2c02986] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) InSe is a good candidate for high-performance photodetectors due to its good light absorption and electrical transport properties. However, 2D InSe photodetectors usually endure a large driving voltage, and 2D InSe-based heterojunction photodetectors require complex fabrication processes. Here, we demonstrate high-performance self-powered InSe-based photoelectrochemical (PEC) photodetectors using electrochemical intercalated ultrathin InSe nanosheets. The ultrathin InSe nanosheets have good crystallinity with a uniform thickness of 1.4-2.1 nm, lateral size up to 18 μm, and yield of 82%. The self-powered InSe-based PEC photodetectors show broadband photoresponse ranging from 365 to 850 nm. The photoresponse of InSe-based PEC photodetectors is boosted by suppressing p-type doping of the intercalator with annealing, which improves the electrical properties and facilitates electron transport from InSe to the electrode. The self-powered annealed InSe (A-InSe) PEC photodetectors show a high responsivity of 10.14 mA/W and fast response speed of 2/37 ms. Moreover, the self-powered PEC photodetectors have good stability under UV-NIR irradiation. Furthermore, the photoresponse can be effectively tuned by the concentration and kind of electrolyte. The facile large-scale fabrication and good photoresponse demonstrate that 2D ultrathin InSe can be applied in high-performance optoelectronic devices.
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Affiliation(s)
- Xuxuan Yang
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin, 150040, China
| | - Xin Liu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin, 150040, China
| | - Lihang Qu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin, 150040, China
| | - Feng Gao
- Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin, 150080, China
| | - Yi Xu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin, 150040, China
| | - Mengqi Cui
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin, 150040, China
| | - Huan Yu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin, 150040, China
| | - Yunxia Wang
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin, 150040, China
| | - PingAn Hu
- Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin, 150080, China
| | - Wei Feng
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin, 150040, China
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30
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Zhao L, Liang Y, Cai X, Du J, Wang X, Liu X, Wang M, Wei Z, Zhang J, Zhang Q. Engineering Near-Infrared Light Emission in Mechanically Exfoliated InSe Platelets through Hydrostatic Pressure for Multicolor Microlasing. NANO LETTERS 2022; 22:3840-3847. [PMID: 35500126 DOI: 10.1021/acs.nanolett.2c01127] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
γ-indium selenide (InSe) is a van der Waals semiconductor and holds great potentials for low-energy-consumption electronic and optoelectronic devices. Herein, we investigated the hydrostatic pressure engineered near-infrared (NIR) light emission of mechanically exfoliated γ-InSe crystals using the diamond anvil cell (DAC) technique. A record-wide spectral tuning range of 185 nm and a large linear pressure coefficient of 40 nm GPa-1 were achieved for spontaneous emissions, leading to ultrabroadband microlasing spectrally ranging from 1022 to 911 nm. This high emission tunability can be attributed to the compression of the soft intralayer In-Se bonds under high pressure, which suppressed the band gap shrinkage by increasing the interlayer interaction. Furthermore, two band gap crossovers of valence (direct-to-indirect) and conduction bands were resolved at approximately 4.0 and 7.0 GPa, respectively, resulting in pressure-sensitive emission lifetime and intensity. These findings pave the pathways for pressure-sensitive InSe-based NIR light sources, sensors and so on.
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Affiliation(s)
- Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yin Liang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xinghong Cai
- Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energies, School of Materials and Energy, Southwest University, Chongqing 400715, China
| | - Jiaxing Du
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaoting Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Min Wang
- Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energies, School of Materials and Energy, Southwest University, Chongqing 400715, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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Bao L, Huang L, Guo H, Gao HJ. Construction and physical properties of low-dimensional structures for nanoscale electronic devices. Phys Chem Chem Phys 2022; 24:9082-9117. [PMID: 35383791 DOI: 10.1039/d1cp05981e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Over the past decades, construction of nanoscale electronic devices with novel functionalities based on low-dimensional structures, such as single molecules and two-dimensional (2D) materials, has been rapidly developed. To investigate their intrinsic properties for versatile functionalities of nanoscale electronic devices, it is crucial to precisely control the structures and understand the physical properties of low-dimensional structures at the single atomic level. In this review, we provide a comprehensive overview of the construction of nanoelectronic devices based on single molecules and 2D materials and the investigation of their physical properties. For single molecules, we focus on the construction of single-molecule devices, such as molecular motors and molecular switches, by precisely controlling their self-assembled structures on metal substrates and charge transport properties. For 2D materials, we emphasize their spin-related electrical transport properties for spintronic device applications and the role that interfaces among 2D semiconductors, contact electrodes, and dielectric substrates play in the electrical performance of electronic, optoelectronic, and memory devices. Finally, we discuss the future research direction in this field, where we can expect a scientific breakthrough.
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Affiliation(s)
- Lihong Bao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Li Huang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
| | - Hui Guo
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
| | - Hong-Jun Gao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
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32
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Liao L, Wu B, Kovalska E, Oliveira FM, Azadmanjiri J, Mazánek V, Valdman L, Spejchalová L, Xu C, Levinský P, Hejtmánek J, Sofer Z. InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors. NANOSCALE 2022; 14:5412-5424. [PMID: 35319556 DOI: 10.1039/d1nr07150e] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials with tunable heterostructures and superior optoelectronic properties have opened a new platform for various applications, e.g., field-effect transistors, ultrasensitive photodetectors and photocatalysts. In this work, an InSe/InSe(Ge) (germanium doped InSe) vdW heterostructure is designed to improve the photoresponse performance of sole InSe in a photoelectrochemical (PEC)-type photodetector. Photoelectrochemical measurements demonstrated that this heterostructure has excellent photoresponse characteristics, including a photocurrent density of 9.8 μA cm-2, a photo-responsivity of 64 μA W-1, and a response time/recovery time of 0.128 s/0.1 s. Moreover, the measurements also revealed the self-powering capability and long-term cycling stability of this heterostructure. The electronic properties of the prepared pure and Ge-doped single crystals unveiled a negative and temperature-independent thermoelectric power and temperature-activated resistivity. The negative character of dominating charge carriers was confirmed by Hall measurements, which corroborated by electrical resistivity revealed a carrier concentration below ∼1015 cm-3 and an electron mobility of ∼500 cm2 V-1 s-1 in Ge-doped crystals. Additionally, the Mott-Schottky model explored the mechanism of charge transfer and enhanced PEC performance. Band bending at the InSe/InSe(Ge)-electrolyte interface benefits the separation and transformation of photogenerated carriers from the heterostructure to electrolyte due to the tunable energy band alignment. These results indicate that the InSe/InSe(Ge) vdW heterostructure is promising for PEC-type photodetectors, which provide a novel way to utilize 2D vdW heterostructures in optoelectronics.
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Affiliation(s)
- Liping Liao
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Bing Wu
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Evgeniya Kovalska
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Filipa M Oliveira
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Jalal Azadmanjiri
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Vlastimil Mazánek
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Lukáš Valdman
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Lucie Spejchalová
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Cunyun Xu
- Institute for Clean Energy and Advanced Materials, School of Materials and Energy, Southwest University, Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, P. R. China
| | - Petr Levinský
- FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Prague 6, Czech Republic
| | - Jiří Hejtmánek
- FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Prague 6, Czech Republic
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
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Wu CY, Cao KJ, Le YX, Li JY, Zhu CY, Wang L, Zhou YX, Wu D, Luo LB. Spectral Engineering of InSe Nanobelts for Full-Color Imaging by Tailoring the Thickness. J Phys Chem Lett 2022; 13:2668-2673. [PMID: 35302372 DOI: 10.1021/acs.jpclett.2c00518] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In this work, we report on the synthesis of InSe nanobelts through a catalyst-free chemical vapor deposition (CVD) growth approach. A remarkable blue shift of the peak photoresponse was observed when the thickness of the InSe nanobelt decreases from 562 to 165 nm. Silvaco Technology Computer Aided Design (TCAD) simulation reveals that such a shift in spectral response should be ascribed to the wavelength-dependent absorption coefficient of InSe, for which incident light with shorter wavelengths will be absorbed near the surface, while light with longer wavelengths will have a greater penetration depth, leading to a red shift of the absorption edge for thicker nanobelt devices. Considering the above theory, three kinds of photodetectors sensitive to blue (450 nm), green (530 nm), and red (660 nm) incident light were achieved by tailoring the thickness of the nanobelts, which can enable the spectral reconstruction of a purple "H" pattern, suggesting the potential application of 2D layered semiconductors in full-color imaging.
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Affiliation(s)
- Chun-Yan Wu
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Kai-Jun Cao
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Yu-Xuan Le
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Jing-Yue Li
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Chen-Yue Zhu
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Li Wang
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Yu-Xue Zhou
- College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, Department of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China
| | - Lin-Bao Luo
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
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34
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Cheng CY, Pai WL, Chen YH, Paylaga NT, Wu PY, Chen CW, Liang CT, Chou FC, Sankar R, Fuhrer MS, Chen SY, Wang WH. Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors. NANO LETTERS 2022; 22:2270-2276. [PMID: 35225620 DOI: 10.1021/acs.nanolett.1c04522] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Understanding the Coulomb interactions between two-dimensional (2D) materials and adjacent ions/impurities is essential to realizing 2D material-based hybrid devices. Electrostatic gating via ionic liquids (ILs) has been employed to study the properties of 2D materials. However, the intrinsic interactions between 2D materials and ILs are rarely addressed. This work studies the intersystem Coulomb interactions in IL-functionalized InSe field-effect transistors by displacement current measurements. We uncover a strong self-gating effect that yields a 50-fold enhancement in interfacial capacitance, reaching 550 nF/cm2 in the maximum. Moreover, we reveal the IL-phase-dependent transport characteristics, including the channel current, carrier mobility, and density, substantiating the self-gating at the InSe/IL interface. The dominance of self-gating in the rubber phase is attributed to the correlation between the intra- and intersystem Coulomb interactions, further confirmed by Raman spectroscopy. This study provides insights into the capacitive coupling at the InSe/IL interface, paving the way to developing liquid/2D material hybrid devices.
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Affiliation(s)
- Chih-Yi Cheng
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Wei-Liang Pai
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Yi-Hsun Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | | | - Pin-Yun Wu
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Chun-Wei Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Fang-Cheng Chou
- Center of Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
| | - Raman Sankar
- Center of Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
- Institute of Physics, Academia Sinica, Taipei 106, Taiwan
| | - Michael S Fuhrer
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia
| | - Shao-Yu Chen
- Center of Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia
- Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan
| | - Wei-Hua Wang
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
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35
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Yang H, Wang G, Guo Y, Wang L, Tan B, Zhang S, Zhang X, Zhang J, Shuai Y, Lin J, Jia D, Hu P. Growth of wafer-scale graphene-hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs. NANOSCALE 2022; 14:4204-4215. [PMID: 35234771 DOI: 10.1039/d1nr06004j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) integrated circuits based on graphene (Gr) heterostructures have emerged as next-generation electronic devices. However, it is still challenging to produce high-quality and large-area Gr/hexagonal boron nitride (h-BN) vertical heterostructures with clear interfaces and precise layer control. In this work, a two-step metallic alloy-assisted epitaxial growth approach has been demonstrated for producing wafer-scale vertical hexagonal boron nitride/graphene (h-BN/Gr) heterostructures with clear interfaces. The heterostructures maintain high uniformity while scaling up and thickening. The layer number of both h-BN and graphene can be independently controlled by tuning the growth process. Furthermore, conductance measurements confirm that electrical hysteresis disappears on h-BN/Gr field-effect transistors, which is attributed to the h-BN dielectric surface. Our work blazes a trail toward next-generation graphene-based analog devices.
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Affiliation(s)
- Huihui Yang
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Gang Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Yanming Guo
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Lifeng Wang
- Institute for Frontier Materials, Deakin University, Waurn Ponds, Australia
| | - Biying Tan
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Shichao Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Xin Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Jia Zhang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Yong Shuai
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Dechang Jia
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
| | - PingAn Hu
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin, 150080, P. R. China.
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
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36
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Zhao Y, Gobbi M, Hueso LE, Samorì P. Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications. Chem Rev 2021; 122:50-131. [PMID: 34816723 DOI: 10.1021/acs.chemrev.1c00497] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.
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Affiliation(s)
- Yuda Zhao
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France.,School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, 310027 Hangzhou, People's Republic of China
| | - Marco Gobbi
- Centro de Fisica de Materiales (CSIC-UPV/EHU), Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain.,CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Luis E Hueso
- CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
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37
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Gao F, Zhang X, Tan B, Zhang S, Zhang J, Jia D, Zhou Y, Hu P. Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS 2 /h-BN/Graphene Heterostructure. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2104459. [PMID: 34622561 DOI: 10.1002/smll.202104459] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2021] [Revised: 08/27/2021] [Indexed: 06/13/2023]
Abstract
With the rapid development of artificial intelligence and neural network computing, the requirement for information storage in computing is gradually increasing. Floating gate memories based on 2D materials has outstanding characteristics such as non-volatility, optical writing, and optical storage, suitable for application in photonic in-memory computing chips. Notably, the optoelectronic memory requires less optical writing energy, which means lower power consumption and greater storage levels. Here, the authors report an optoelectronic memory based on SnS2 /h-BN/graphene heterostructure with an extremely low photo-generated hole tunneling barrier of 0.23 eV. This non-volatile multibit floating gate memory shows a high switching ratio of 106 and a large memory window range of 64.8 V in the gate range ±40 V. And the memory device can achieve multilevel storage states of 50 under a low power light pulses of 0.32 nW and small light pulse width of 50 ms. Thanks to the Fowler-Nordheim tunneling of the photo-generated holes, the optical writing energy of the optoelectronic memory has been successfully reduced by one to three orders of magnitude compared to existing 2D materials-based systems.
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Affiliation(s)
- Feng Gao
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Xin Zhang
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Biying Tan
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Shichao Zhang
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Jia Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, Harbin, 150080, China
| | - Dechang Jia
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
| | - Yu Zhou
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
| | - PingAn Hu
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, Harbin, 150080, China
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38
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Chang H, Wang H, Song KK, Zhong M, Shi LB, Qian P. Origin of phonon-limited mobility in two-dimensional metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:013003. [PMID: 34714257 DOI: 10.1088/1361-648x/ac29e1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2021] [Accepted: 09/24/2021] [Indexed: 06/13/2023]
Abstract
Metal dichalcogenides are novel two-dimensional (2D) semiconductors after the discovery of graphene. In this article, phonon-limited mobility for six kinds of 2D semiconductors with the composition of MX2is reviewed, in which M (Cr, Mo and W) is the transition metal, and X (S and Se) is the chalcogen element. The review is divided into three parts. In the first part, we briefly introduce the calculation method of mobility, including the empirical model and Boltzmann transport theory (BTE). The application scope, merits and limitations of these methods are summarized. In the second part, we explore empirical models to calculate the mobility of MX2, including longitudinal acoustic phonon, optical phonon (OP) and polar optical phonon (POP) models. The contribution of multi-valley to mobility is reviewed in the calculation. The differences between static and high-frequency dielectric constants (Δϵ) are only 0.13 and 0.03 for MoS2and WS2. Such a low value indicates that the polarization hardly changes in the external field. So, their mobility is not determined by POP, but by deformation potential models. Different from GaAs, POP scattering plays a decisive role in its mobility. Our investigations also reveal that the scattering from POP cannot be ignored in CrSe2, MoSe2and WSe2. In the third parts, we investigate the mobility of MX2using electron-phonon coupling matrix element, which is based on BTE from the framework of a many-body quantum-field theory. Valence band splitting of MoS2and WS2is induced by spin-orbit coupling effect, which leads to the increase of hole mobility. In particular, we review in detail the theoretical and experimental results of MoS2mobility in recent ten years, and its mobility is also compared with other materials to deepen the understanding.
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Affiliation(s)
- Hao Chang
- College of Physical Science and Technology, Bohai University, Jinzhou 121013, People's Republic of China
| | - Hao Wang
- College of Physical Science and Technology, Bohai University, Jinzhou 121013, People's Republic of China
| | - Ke-Ke Song
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Min Zhong
- Liaoning Key Laboratory of Optoelectronic Functional Materials Testing and Technology, College of Chemical and Material Engineering, Bohai University, Jinzhou 121013, People's Republic of China
| | - Li-Bin Shi
- College of Physical Science and Technology, Bohai University, Jinzhou 121013, People's Republic of China
| | - Ping Qian
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
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39
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Xie Z, Chen L. Influence of Ce, Nd, Eu and Tm Dopants on the Properties of InSe Monolayer: A First-Principles Study. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2707. [PMID: 34685148 PMCID: PMC8541675 DOI: 10.3390/nano11102707] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Revised: 10/08/2021] [Accepted: 10/12/2021] [Indexed: 11/16/2022]
Abstract
Doping of foreign atoms may substantially alter the properties of the host materials, in particular low-dimension materials, leading to many potential functional applications. Here, we perform density functional theory calculations of two-dimensional InSe materials with substitutional doping of lanthanide atoms (Ce, Nd, Eu, Tm) and investigate systematically their structural, magnetic, electronic and optical properties. The calculated formation energy shows that the substitutional doping of these lanthanide atoms is feasible in the InSe monolayer, and such doping is more favorable under Se-rich than In-rich conditions. As for the structure, doping of lanthanide atoms induces visible outward movement of the lanthanide atom and its surrounding Se atoms. The calculated total magnetic moments are 0.973, 2.948, 7.528 and 1.945 μB for the Ce-, Nd-, Eu-, and Tm-doped systems, respectively, which are mainly derived from lanthanide atoms. Further band structure calculations reveal that the Ce-doped InSe monolayer has n-type conductivity, while the Nd-doped InSe monolayer has p-type conductivity. The Eu- and Tm-doped systems are found to be diluted magnetic semiconductors. The calculated optical response of absorption in the four doping cases shows redshift to lower energy within the infrared range compared with the host InSe monolayer. These findings suggest that doping of lanthanide atoms may open up a new way of manipulating functionalities of InSe materials for low-dimension optoelectronics and spintronics applications.
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Affiliation(s)
- Zhi Xie
- College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou 350002, China;
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40
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Sun J, Zhuang X, Fan Y, Guo S, Cheng Z, Liu D, Yin Y, Tian Y, Pang Z, Wei Z, Song X, Liao L, Chen F, Ho JC, Yang ZX. Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102323. [PMID: 34288454 DOI: 10.1002/smll.202102323] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2021] [Revised: 06/27/2021] [Indexed: 06/13/2023]
Abstract
The relative low hole mobility of p-channel building block device challenges the continued miniaturization of modern electronic chips. Metal-semiconductor junction is always an efficient strategy to control the carrier concentration of channel semiconductor, benefiting the carrier mobility regulation of building block device. In this work, complementary metal oxide semiconductor (CMOS)-compatible metals are selected to deposit on the surface of the important p-channel building block of GaSb nanowire field-effect-transistors (NWFETs), demonstrating the efficient strategy of hole mobility enhancement by metal-semiconductor junction. When deposited with lower work function metal of Al, the peak hole mobility of GaSb NWFET can be enhanced to as high as ≈3372 cm2 V-1 s-1 , showing three times than the un-deposited one. The as-studied metal-semiconductor junction is also efficient for the hole mobility enhancement of other p-channel devices, such as GaAs NWFET, GaAs film FET, and WSe2 FET. With the enhanced mobility, the as-constructed CMOS inverter shows good invert characteristics, showing a relatively high gain of ≈18.1. All results may be regarded as important advances to the next-generation electronics.
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Affiliation(s)
- Jiamin Sun
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Xinming Zhuang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yibo Fan
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Shuai Guo
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China
| | - Zichao Cheng
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Dong Liu
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Yanxue Yin
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yufeng Tian
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Zhiyong Pang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China
| | - Xiufeng Song
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Feng Chen
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zai-Xing Yang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
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41
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Niu X, Xiao S, Sun D, Shi A, Zhou Z, Chen W, Li X, Wang J. Direct formation of interlayer exciton in two-dimensional van der Waals heterostructures. MATERIALS HORIZONS 2021; 8:2208-2215. [PMID: 34846425 DOI: 10.1039/d1mh00571e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In atomically thin two-dimensional van der Waals (2D vdW) heterostructures, spatially separated interlayer excitons play an important role in the optoelectronic performance and show great potential for the exploration of many-body quantum phenomena. A commonly accepted formation mode for interlayer excitons is via a two-step intralayer exciton transfer mechanism, namely, photo-excited intralayer excitons are initially generated in individual sublayers, and photogenerated electrons and holes are then separated into opposite sublayers based on the type-II band alignment. Herein, we expand the concept of interlayer exciton formation and reveal that bright interlayer excitons can be generated in one step by direct interlayer photoexcitation in 2D vdW heterostructures that have strong interlayer coupling and a short photoexcitation channel. First-principles and many-body perturbation theory calculations demonstrate that indium selenide/antimonene and indium selenide/black phosphorus heterostructures are two promising systems that show an exceptionally large interlayer transition probability (>500 Debye2). This study enriches the understanding of interlayer exciton formation and provides a new avenue to acquiring strong interlayer excitons in artificial 2D vdW heterostructures.
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Affiliation(s)
- Xianghong Niu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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42
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Wu L, Wang A, Shi J, Yan J, Zhou Z, Bian C, Ma J, Ma R, Liu H, Chen J, Huang Y, Zhou W, Bao L, Ouyang M, Pennycook SJ, Pantelides ST, Gao HJ. Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices. NATURE NANOTECHNOLOGY 2021; 16:882-887. [PMID: 33941919 DOI: 10.1038/s41565-021-00904-5] [Citation(s) in RCA: 57] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2020] [Accepted: 03/17/2021] [Indexed: 06/12/2023]
Abstract
The development of high-performance memory devices has played a key role in the innovation of modern electronics. Non-volatile memory devices have manifested high capacity and mechanical reliability as a mainstream technology; however, their performance has been hampered by low extinction ratio and slow operational speed. Despite substantial efforts to improve these characteristics, typical write times of hundreds of micro- or milliseconds remain a few orders of magnitude longer than that of their volatile counterparts. Here we demonstrate non-volatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, achieving ultrahigh-speed programming/erasing operations in the range of nanoseconds with extinction ratio up to 1010. This enhanced performance enables new device capabilities such as multi-bit storage, thus opening up applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale up.
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Affiliation(s)
- Liangmei Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Aiwei Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Jinan Shi
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Jiahao Yan
- Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Zhang Zhou
- Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Ce Bian
- Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Jiajun Ma
- Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Ruisong Ma
- Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Hongtao Liu
- Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Jiancui Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Yuan Huang
- Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Wu Zhou
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Lihong Bao
- Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China.
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, People's Republic of China.
| | - Min Ouyang
- Department of Physics, University of Maryland, College Park, MD, USA.
| | - Stephen J Pennycook
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- Department of Materials Science and Engineering & Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
| | - Sokrates T Pantelides
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China
- Department of Physics and Astronomy & Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, People's Republic of China.
- CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing, People's Republic of China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, People's Republic of China.
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43
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Gish JT, Lebedev D, Stanev TK, Jiang S, Georgopoulos L, Song TW, Lim G, Garvey ES, Valdman L, Balogun O, Sofer Z, Sangwan VK, Stern NP, Hersam MC. Ambient-Stable Two-Dimensional CrI 3 via Organic-Inorganic Encapsulation. ACS NANO 2021; 15:10659-10667. [PMID: 34101433 DOI: 10.1021/acsnano.1c03498] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional transitional metal halides have recently attracted significant attention due to their thickness-dependent and electrostatically tunable magnetic properties. However, this class of materials is highly reactive chemically, which leads to irreversible degradation and catastrophic dissolution within seconds in ambient conditions, severely limiting subsequent characterization, processing, and applications. Here, we impart long-term ambient stability to the prototypical transition metal halide CrI3 by assembling a noncovalent organic buffer layer, perylenetetracarboxylic dianhydride (PTCDA), which templates subsequent atomic layer deposition (ALD) of alumina. X-ray photoelectron spectroscopy demonstrates the necessity of the noncovalent organic buffer layer since the CrI3 undergoes deleterious surface reactions with the ALD precursors in the absence of PTCDA. This organic-inorganic encapsulation scheme preserves the long-range magnetic ordering in CrI3 down to the monolayer limit as confirmed by magneto-optical Kerr effect measurements. Furthermore, we demonstrate field-effect transistors, photodetectors, and optothermal measurements of CrI3 thermal conductivity in ambient conditions.
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Affiliation(s)
- J Tyler Gish
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Teodor K Stanev
- Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - Shizhou Jiang
- Department of Mechanical Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Leonidas Georgopoulos
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Thomas W Song
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Gilhwan Lim
- Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - Ethan S Garvey
- Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - Lukáš Valdman
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Oluwaseyi Balogun
- Department of Mechanical Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Nathaniel P Stern
- Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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44
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Zappia M, Bianca G, Bellani S, Curreli N, Sofer Z, Serri M, Najafi L, Piccinni M, Oropesa-Nuñez R, Marvan P, Pellegrini V, Kriegel I, Prato M, Cupolillo A, Bonaccorso F. Two-Dimensional Gallium Sulfide Nanoflakes for UV-Selective Photoelectrochemical-type Photodetectors. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2021; 125:11857-11866. [PMID: 34276861 PMCID: PMC8279705 DOI: 10.1021/acs.jpcc.1c03597] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2021] [Revised: 04/28/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) transition-metal monochalcogenides have been recently predicted to be potential photo(electro)catalysts for water splitting and photoelectrochemical (PEC) reactions. Differently from the most established InSe, GaSe, GeSe, and many other monochalcogenides, bulk GaS has a large band gap of ∼2.5 eV, which increases up to more than 3.0 eV with decreasing its thickness due to quantum confinement effects. Therefore, 2D GaS fills the void between 2D small-band-gap semiconductors and insulators, resulting of interest for the realization of van der Waals type-I heterojunctions in photocatalysis, as well as the development of UV light-emitting diodes, quantum wells, and other optoelectronic devices. Based on theoretical calculations of the electronic structure of GaS as a function of layer number reported in the literature, we experimentally demonstrate, for the first time, the PEC properties of liquid-phase exfoliated GaS nanoflakes. Our results indicate that solution-processed 2D GaS-based PEC-type photodetectors outperform the corresponding solid-state photodetectors. In fact, the 2D morphology of the GaS flakes intrinsically minimizes the distance between the photogenerated charges and the surface area at which the redox reactions occur, limiting electron-hole recombination losses. The latter are instead deleterious for standard solid-state configurations. Consequently, PEC-type 2D GaS photodetectors display a relevant UV-selective photoresponse. In particular, they attain responsivities of 1.8 mA W-1 in 1 M H2SO4 [at 0.8 V vs reversible hydrogen electrode (RHE)], 4.6 mA W-1 in 1 M Na2SO4 (at 0.9 V vs RHE), and 6.8 mA W-1 in 1 M KOH (at 1.1. V vs RHE) under 275 nm illumination wavelength with an intensity of 1.3 mW cm-2. Beyond the photodetector application, 2D GaS-based PEC-type devices may find application in tandem solar PEC cells in combination with other visible-sensitive low-band-gap materials, including transition-metal monochalcogenides recently established for PEC solar energy conversion applications.
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Affiliation(s)
- Marilena
I. Zappia
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C, 87036 Rende, CS, Italy
| | - Gabriele Bianca
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, via Dodecaneso 31, 16146 Genoa, Italy
| | - Sebastiano Bellani
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Nicola Curreli
- Functional
Nanosystems, Istituto Italiano di Tecnologia (IIT), via Morego 30, 16163 Genova, Italy
| | - Zdeněk Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Michele Serri
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Leyla Najafi
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Marco Piccinni
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, via Dodecaneso 31, 16146 Genoa, Italy
| | - Reinier Oropesa-Nuñez
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Department
of Material Science and Engineering, Uppsala
University, Box 534, 75121 Uppsala, Sweden
| | - Petr Marvan
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Vittorio Pellegrini
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
| | - Ilka Kriegel
- Functional
Nanosystems, Istituto Italiano di Tecnologia (IIT), via Morego 30, 16163 Genova, Italy
| | - Mirko Prato
- Materials
Characterization Facility, Istituto Italiano di Tecnologia, via Morego 30, Genova 16163, Italy
| | - Anna Cupolillo
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C, 87036 Rende, CS, Italy
| | - Francesco Bonaccorso
- BeDimensional
Spa., via Lungotorrente
Secca 3D, 16163 Genova, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
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Wang Y, Liu S, Li Q, Quhe R, Yang C, Guo Y, Zhang X, Pan Y, Li J, Zhang H, Xu L, Shi B, Tang H, Li Y, Yang J, Zhang Z, Xiao L, Pan F, Lu J. Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:056501. [PMID: 33761489 DOI: 10.1088/1361-6633/abf1d4] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2020] [Accepted: 03/24/2021] [Indexed: 06/12/2023]
Abstract
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal properties, which hold potential in electronic, optoelectronic, thermoelectric applications, and so forth. The field-effect transistor (FET), a semiconductor gated with at least three terminals, is pervasively exploited as the device geometry for these applications. For lack of effective and stable substitutional doping techniques, direct metal contact is often used in 2DSC FETs to inject carriers. A Schottky barrier (SB) generally exists in the metal-2DSC junction, which significantly affects and even dominates the performance of most 2DSC FETs. Therefore, low SB or Ohmic contact is highly preferred for approaching the intrinsic characteristics of the 2DSC channel. In this review, we systematically introduce the recent progress made in theoretical prediction of the SB height (SBH) in the 2DSC FETs and the efforts made both in theory and experiments to achieve low SB contacts. From the comparison between the theoretical and experimentally observed SBHs, the emerging first-principles quantum transport simulation turns out to be the most powerful theoretical tool to calculate the SBH of a 2DSC FET. Finally, we conclude this review from the viewpoints of state-of-the-art electrode designs for 2DSC FETs.
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Affiliation(s)
- Yangyang Wang
- Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Shiqi Liu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Qiuhui Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Chen Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ying Guo
- School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, People's Republic of China
| | - Xiuying Zhang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Yuanyuan Pan
- State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemical Engineering, China University of Petroleum (East China), Qingdao, 266580, People's Republic of China
| | - Jingzhen Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Han Zhang
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Bowen Shi
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Hao Tang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ying Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, People's Republic of China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Lin Xiao
- Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Feng Pan
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen 518055, People's Republic of China
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, People's Republic of China
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46
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Cho SH, Jang H, Im H, Lee D, Lee JH, Watanabe K, Taniguchi T, Seong MJ, Lee BH, Lee K. Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures. Sci Rep 2021; 11:7843. [PMID: 33846520 PMCID: PMC8041794 DOI: 10.1038/s41598-021-87442-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2021] [Accepted: 03/25/2021] [Indexed: 11/09/2022] Open
Abstract
Van der Waals (vdW) heterostructures, consisting of a variety of low-dimensional materials, have great potential use in the design of a wide range of functional devices thanks to their atomically thin body and strong electrostatic tunability. Here, we demonstrate multi-functional indium selenide (InSe)/black phosphorous (BP) heterostructures encapsulated by hexagonal boron nitride. At a positive drain bias (VD), applied on the BP while the InSe is grounded, our heterostructures show an intermediate gate voltage (VBG) regime where the current hardly changes, working as a ternary transistor. By contrast, at a negative VD, the device shows strong negative differential transconductance characteristics; the peak current increases up to ~5 μA and the peak-to-valley current ratio reaches 1600 at VD = −2 V. Four-terminal measurements were performed on each layer, allowing us to separate the contributions of contact resistances and channel resistance. Moreover, multiple devices with different device structures and contacts were investigated, providing insight into the operation principle and performance optimization. We systematically investigated the influence of contact resistances, heterojunction resistance, channel resistance, and the thickness of BP on the detailed operational characteristics at different VD and VBG regimes.
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Affiliation(s)
- Sang-Hoo Cho
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Hanbyeol Jang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Heungsoon Im
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Donghyeon Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Je-Ho Lee
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Maeng-Je Seong
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Byoung Hun Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea.,Center for Semiconductor Technology Convergence (CSTC), Electrical Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Kayoung Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea. .,School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
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47
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Wang CY, Lin YW, Chuang C, Yang CH, Patel DK, Chen SZ, Yeh CC, Chen WC, Lin CC, Chen YH, Wang WH, Sankar R, Chou FC, Kruskopf M, Elmquist RE, Liang CT. Magnetotransport in hybrid InSe/monolayer graphene on SiC. NANOTECHNOLOGY 2021; 32:155704. [PMID: 33373982 DOI: 10.1088/1361-6528/abd726] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron-electron (e-e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (lnT) dependence of the Hall slope R H = δR xy /δB = δρ xy /δB can be used to probe e-e interaction effects at various temperatures even when the measured resistivity does not show a lnT dependence due to strong electron-phonon scattering. Nevertheless, one needs to be certain that the change of R H is not caused by an increase of the carrier density by checking the magnetic field position of the longitudinal resistivity minimum at different temperatures. Given the current challenges in gating graphene on SiC with a suitable dielectric layer, our results suggest that capping a van der Waals material on graphene is an effective way to modify the electronic properties of monolayer graphene on SiC.
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Affiliation(s)
- Chih-Yuan Wang
- Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan
| | - Yun-Wu Lin
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Chiashain Chuang
- Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
| | - Cheng-Hsueh Yang
- Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan
| | - Dinesh K Patel
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
- Physical Measurement Laboratory, National Institute of Standard and Technology (NIST), Gaithersburg, MD 20899, United States of America
| | - Sheng-Zong Chen
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Ching-Chen Yeh
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Wei-Chen Chen
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Chia-Chun Lin
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Yi-Hsun Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Wei-Hua Wang
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Raman Sankar
- Institute of Physics, Academia Sinica, Taipei 115, Taiwan
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
| | - Fang-Cheng Chou
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
| | - Mattias Kruskopf
- Physical Measurement Laboratory, National Institute of Standard and Technology (NIST), Gaithersburg, MD 20899, United States of America
- Joint Quantum Institute, University of Maryland, College Park, MD 20742, United States of America
| | - Randolph E Elmquist
- Physical Measurement Laboratory, National Institute of Standard and Technology (NIST), Gaithersburg, MD 20899, United States of America
| | - Chi-Te Liang
- Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
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48
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Zhou Y, Zhang L, Gao W, Yang M, Lu J, Zheng Z, Zhao Y, Yao J, Li J. A reasonably designed 2D WS 2 and CdS microwire heterojunction for high performance photoresponse. NANOSCALE 2021; 13:5660-5669. [PMID: 33724286 DOI: 10.1039/d1nr00210d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Heterojunctions based on low-dimensional materials can combine the superiorities of each component and realize novel properties. Herein, a mixed-dimensional heterojunction comprising multilayer WS2, CdS microwire, and few-layer WS2 has been demonstrated. The working mechanism and its application in a photodetector are investigated. The multilayer WS2 and CdS microwire are utilized to provide efficient light absorption, while the few-layer WS2 is utilized to passivate interfacial impurity scattering. In addition, based on the reasonable band alignment of the components, three built-in electric fields are formed, which efficiently separate the photo-generated carriers and enhance the photocurrent. In particular, the photo-generated electrons are trapped in CdS, while the photo-generated holes circulate in the external circuit, leading to a high photoconductivity gain. Motivated by these, we constructed a device that exhibits a photoresponsivity of ∼4.7 A W-1, a response/recovery time of 13.7/15.8 ms, and a detectivity of 3.4 × 1012 Jones, which are much better than the counterparts. All of these clearly demonstrate the importance of advanced device designs for realizing high performance optoelectronic devices.
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Affiliation(s)
- Yuchen Zhou
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, Guangdong, P. R. China.
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Gao S, Liu L, Wen B, Zhang X. Monolayer InSe photodetector with strong anisotropy and surface-bound excitons. Phys Chem Chem Phys 2021; 23:6075-6083. [PMID: 33683275 DOI: 10.1039/d1cp00255d] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The in-plane anisotropy of monolayer InSe plays a critical role in the application of photodetectors. In this work, through nonequilibrium Green's function density functional theory (NEGF-DFT) and time-dependent density functional theory (TD-DFT) calculations, we investigated the anisotropic quantum transport in darkness and under linearly polarized light, and explored the role of surface-bound excitons in the anisotropic photocurrent. The anisotropic dark quantum transport is attributed to different potential barriers in the zigzag and armchair orientations (Id-zig/Id-arm = 1.2 × 102). Linearly polarized photocurrent calculations show that the extinction ratio reaches a maximum value of 105.67. Moreover, surface-bound exciton calculations via TD-DFT revealed that the strong anisotropic photocurrent derives from surface-bound excitons generated in the In 5pz, Se 4pz, and Se 4dz2 orbitals. InSe shows tremendous potential for use in field-effect transistors, flexible nano- and optoelectronics, and polarized light devices.
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Affiliation(s)
- Siyan Gao
- Institute of Nanosurface Science and Engineering, Guangdong Provincial Key Laboratory of Micro/Nano, Shenzhen University, Shenzhen 518060, China.
| | - Liang Liu
- Institute of Nanosurface Science and Engineering, Guangdong Provincial Key Laboratory of Micro/Nano, Shenzhen University, Shenzhen 518060, China.
| | - Bo Wen
- Institute of Nanosurface Science and Engineering, Guangdong Provincial Key Laboratory of Micro/Nano, Shenzhen University, Shenzhen 518060, China.
| | - Xi Zhang
- Institute of Nanosurface Science and Engineering, Guangdong Provincial Key Laboratory of Micro/Nano, Shenzhen University, Shenzhen 518060, China.
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50
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Ni Y, Wang Y, Xu W. Recent Process of Flexible Transistor-Structured Memory. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e1905332. [PMID: 32243063 DOI: 10.1002/smll.201905332] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2019] [Revised: 12/20/2019] [Accepted: 03/04/2020] [Indexed: 06/11/2023]
Abstract
Flexible transistor-structured memory (FTSM) has attracted great attention for its important role in flexible electronics. For nonvolatile information storage, FTSMs with floating-gate, charge-trap, and ferroelectric mechanisms have been developed. By introducing an optical sensory module, FTSM can be operated by optical inputs to function as an optical memory transistor. As a special type of FTSM, transistor-structured artificial synapse emulates important functions of a biological synapse to mimic brain-inspired memory behaviors and nervous signal transmissions. This work reviews the recent development of the above mentioned FTSMs, with a focus on working mechanism and materials, and flexibility.
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Affiliation(s)
- Yao Ni
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
| | - Yongfei Wang
- School of Materials and Metallurgy, University of Science and Technology Liaoning, Anshan, 114051, China
| | - Wentao Xu
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
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