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Lin PA, Yang B, Lin C, Fan Z, Chen Y, Zhang W, Cai B, Sun J, Zheng X, Zhang WH. A regulation strategy of self-assembly molecules for achieving efficient inverted perovskite solar cells. Phys Chem Chem Phys 2024; 26:14305-14316. [PMID: 38693910 DOI: 10.1039/d4cp00509k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/03/2024]
Abstract
Self-assembled monolayers (SAMs) have been successfully employed to enhance the efficiency of inverted perovskite solar cells (PSCs) and perovskite/silicon tandem solar cells due to their facile low-temperature processing and superior device performance. Nevertheless, depositing uniform and dense SAMs with high surface coverage on metal oxide substrates remains a critical challenge. In this work, we propose a holistic strategy to construct composite hole transport layers (HTLs) by co-adsorbing mixed SAMs (MeO-2PACz and 2PACz) onto the surface of the H2O2-modified NiOx layer. The results demonstrate that the conductivity of the NiOx bulk phase is enhanced due to the H2O2 modification, thereby facilitating carrier transport. Furthermore, the hydroxyl-rich NiOx surface promotes uniform and dense adsorption of mixed SAM molecules while enhancing their anchoring stability. In addition, the energy level alignment at the interface is improved due to the utilization of mixed SAMs in an optimized ratio. Furthermore, the perovskite film crystal growth is facilitated by the uniform and dense composite HTLs. As a result, the power conversion efficiency of PSCs based on composite HTLs is boosted from 22.26% to 23.16%, along with enhanced operational stability. This work highlights the importance of designing and constructing NiOx/SAM composite HTLs as an effective strategy for enhancing both the performance and stability of inverted PSCs.
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Affiliation(s)
- Pu-An Lin
- Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China.
- National Energy Novel Materials Center, Chengdu 610200, China
- Yunnan Key Laboratory of Carbon Neutrality and Green Low-carbon Technologies, School of Materials and Energy, Yunnan University, Kunming, Yunnan 650000, China.
| | - Bo Yang
- Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China.
- National Energy Novel Materials Center, Chengdu 610200, China
| | - Changqing Lin
- School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Zhenghui Fan
- Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China.
- National Energy Novel Materials Center, Chengdu 610200, China
| | - Yu Chen
- College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu, 610059, China
| | - Wenfeng Zhang
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Bing Cai
- Yunnan Key Laboratory of Carbon Neutrality and Green Low-carbon Technologies, School of Materials and Energy, Yunnan University, Kunming, Yunnan 650000, China.
| | - Jie Sun
- Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China.
| | - Xiaojia Zheng
- Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, China.
- National Energy Novel Materials Center, Chengdu 610200, China
| | - Wen-Hua Zhang
- Yunnan Key Laboratory of Carbon Neutrality and Green Low-carbon Technologies, School of Materials and Energy, Yunnan University, Kunming, Yunnan 650000, China.
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2
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Zhang S, Zhao X, Qiu Y, Xiong Y, Meng G, Chen W, Liu Z, Zhang J. Electron Deficient Ir-O Bonds Promote Heterogeneous Ir-Catalyzed Anti-Markovnikov Hydroboration of Alkenes under Mild Neat Conditions. NANO LETTERS 2024; 24:5165-5173. [PMID: 38630980 DOI: 10.1021/acs.nanolett.4c00163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/19/2024]
Abstract
Tuning electronic characteristics of metal-ligand bonds based on reaction pathways to achieve efficient catalytic processes has been widely studied and proven to be feasible in homogeneous catalysis, but it is scarcely investigated in heterogeneous catalysis. Herein, we demonstrate the regulation of the electronic configuration of Ir-O bonds in an Ir single-atom catalyst according to the borane activation mechanism. Ir-O bonds in Ir1/Ni(OH)x are found to be more electron-poor than those in Ir1/NiOx. Despite the mild solvent-free conditions and ambient temperature, Ir1/Ni(OH)x exhibits outstanding performance for the hydroboration of alkenes, furnishing the desired alkylboronic esters with a turnover frequency value of ≤3060 h-1 and 99% anti-Markovnikov selectivity, which is significantly better than that of Ir1/NiOx (42 h-1). It is further proven that the more electron-poor Ir-O bonds as active centers are more oxidative and so benefit the activation of the H-B bond in the reductive pinacolborane.
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Affiliation(s)
- Shasha Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, Zhejiang 325035, China
| | - Xudong Zhao
- College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, Heilongjiang 150001, China
| | - Yajun Qiu
- State Key Laboratory of High-efficiency Utilization of Coal and Green Chemical Engineering, College of Chemistry and Chemical Engineering, Ningxia University, Yinchuan, Ningxia 750021, China
| | - Yu Xiong
- Department of Chemistry and Chemical Engineering, Central South University, Changsha, Hunan 410083, China
| | - Ge Meng
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, Zhejiang 325035, China
| | - Wei Chen
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, Zhejiang 325035, China
| | - Zhiliang Liu
- College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, Heilongjiang 150001, China
| | - Jian Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, Zhejiang 325035, China
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Zhao J, Chen F, Jia H, Wang L, Liu P, Luo T, Guan L, Li X, Yin Z, Tang A. Boosting Cu─In─Zn─S-based Quantum-Dot Light-Emitting Diodes Enabled by Engineering Cu─NiO x/PEDOT:PSS Bilayered Hole-Injection Layer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307115. [PMID: 38059744 DOI: 10.1002/smll.202307115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Revised: 11/10/2023] [Indexed: 12/08/2023]
Abstract
The imbalance of charge injection is considered to be a major factor that limits the device performance of cadmium-free quantum-dot light-emitting diodes (QLEDs). In this work, high-performance cadmium-free Cu─In─Zn─S(CIZS)-based QLEDs are designed and fabricated through tailoring interfacial energy level alignment and improving the balance of charge injection. This is achieved by introducing a bilayered hole-injection layer (HIL) of Cu-doped NiOx (Cu─NiOx)/Poly(3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS). High-quality Cu─NiOx film is prepared through a novel and straightforward sol-gel procedure. Multiple experimental characterizations and theoretical calculations show that the incorporation of Cu2+ ions can regulate the energy level structure of NiOx and enhance the hole mobility. The state-of-art CIZS-based QLEDs with Cu─NiOx/PEDOT:PSS bilayered HIL exhibit the maximum external quantum efficiency of 6.04% and half-life time of 48 min, which is 1.3 times and four times of the device with only PEDOT:PSS HIL. The work provides a new pathway for developing high-performance cadmium-free QLEDs.
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Affiliation(s)
- Jinxing Zhao
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Fei Chen
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China
| | - Haoran Jia
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Lijin Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Ping Liu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Tao Luo
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Li Guan
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Xu Li
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Zhe Yin
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Aiwei Tang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
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4
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Su J, Zheng G, Chen B, Dong P, Ma B, Yao D, Tian N, Peng Y, Wang J, Long F. Evaporated Nickel Oxide Films with Slow Annealing and Interface Modification for Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38662416 DOI: 10.1021/acsami.4c00249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Electron-beam-evaporated nickel oxide (NiOx) films are known for their high quality, precise control, and suitability for complex structures in perovskite (PVK) solar cells (PSCs). However, untreated NiOx films have inherent challenges, such as surface defects, relatively low intrinsic conductivity, and shallow valence band maximum, which seriously restrict the efficiency and stability of the devices. To address these challenges, we employ a dual coordination optimization strategy. The strategy includes low heating rate annealing of NiOx films and using an aminoguanidine nitrate spin coating process on the surfaces of NiOx films to strategically modify NiOx films itself and the interface of NiOx/PVK. Under the synergistic effect of this dual optimization method, the quality of the films is significantly improved and its p-type characteristics are enhanced. At the same time, the interface defects and energy level alignment of the films are effectively improved, and the charge extraction ability at the interface is improved. The combined treatment significantly improved the efficiency of inverted PSCs, from 17.85% to 20.31%, and enhanced device stability under various conditions. This innovative dual-coordinated optimization strategy provides a clear and effective framework for improving the performance of NiOx films and inverted PSCs.
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Affiliation(s)
- Jiale Su
- Guangxi Key Laboratory of Optical and Electronic Material and Devices, School of Materials Science and Engineering, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
| | - Guoyuan Zheng
- Guangxi Key Laboratory of Optical and Electronic Material and Devices, School of Materials Science and Engineering, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
- Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
| | - Bitao Chen
- Guangxi Key Laboratory of Optical and Electronic Material and Devices, School of Materials Science and Engineering, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
| | - Pengpeng Dong
- Guangxi Key Laboratory of Optical and Electronic Material and Devices, School of Materials Science and Engineering, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
| | - Bin Ma
- Guangxi Key Laboratory of Optical and Electronic Material and Devices, School of Materials Science and Engineering, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
| | - Disheng Yao
- Guangxi Key Laboratory of Optical and Electronic Material and Devices, School of Materials Science and Engineering, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
- Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
| | - Nan Tian
- Guangxi Key Laboratory of Optical and Electronic Material and Devices, School of Materials Science and Engineering, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
| | - Yong Peng
- State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Jilin Wang
- Guangxi Key Laboratory of Optical and Electronic Material and Devices, School of Materials Science and Engineering, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
- Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
| | - Fei Long
- Guangxi Key Laboratory of Optical and Electronic Material and Devices, School of Materials Science and Engineering, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
- Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, 12 Jiangan Road Guilin, Guangxi 541004, China
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Zhang J, Deng W, Weng Y, Jiang J, Mao H, Zhang W, Lu T, Long D, Jiang F. Intercalated PtCo Electrocatalyst of Vanadium Metal Oxide Increases Charge Density to Facilitate Hydrogen Evolution. Molecules 2024; 29:1518. [PMID: 38611798 PMCID: PMC11013459 DOI: 10.3390/molecules29071518] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/27/2024] [Revised: 03/16/2024] [Accepted: 03/18/2024] [Indexed: 04/14/2024] Open
Abstract
Efforts to develop high-performance electrocatalysts for the hydrogen evolution reaction (HER) are of utmost importance in ensuring sustainable hydrogen production. The controllable fabrication of inexpensive, durable, and high-efficient HER catalysts still remains a great challenge. Herein, we introduce a universal strategy aiming to achieve rapid synthesis of highly active hydrogen evolution catalysts using a controllable hydrogen insertion method and solvothermal process. Hydrogen vanadium bronze HxV2O5 was obtained through controlling the ethanol reaction rate in the oxidization process of hydrogen peroxide. Subsequently, the intermetallic PtCoVO supported on two-dimensional graphitic carbon nitride (g-C3N4) nanosheets was prepared by a solvothermal method at the oil/water interface. In terms of HER performance, PtCoVO/g-C3N4 demonstrates superior characteristics compared to PtCo/g-C3N4 and PtCoV/g-C3N4. This superiority can be attributed to the notable influence of oxygen vacancies in HxV2O5 on the electrical properties of the catalyst. By adjusting the relative proportions of metal atoms in the PtCoVO/g-C3N4 nanomaterials, the PtCoVO/g-C3N4 nanocomposites show significant HER overpotential of η10 = 92 mV, a Tafel slope of 65.21 mV dec-1, and outstanding stability (a continuous test lasting 48 h). The nanoarchitecture of a g-C3N4-supported PtCoVO nanoalloy catalyst exhibits exceptional resistance to nanoparticle migration and corrosion, owing to the strong interaction between the metal nanoparticles and the g-C3N4 support. Pt, Co, and V simultaneous doping has been shown by Density Functional Theory (DFT) calculations to enhance the density of states (DOS) at the Fermi level. This augmentation leads to a higher charge density and a reduction in the adsorption energy of intermediates.
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Affiliation(s)
- Jingjing Zhang
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China; (J.Z.); (J.J.); (H.M.); (W.Z.); (T.L.)
| | - Wei Deng
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China; (J.Z.); (J.J.); (H.M.); (W.Z.); (T.L.)
| | - Yun Weng
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Textile, Donghua University, Shanghai 201620, China;
| | - Jingxian Jiang
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China; (J.Z.); (J.J.); (H.M.); (W.Z.); (T.L.)
| | - Haifang Mao
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China; (J.Z.); (J.J.); (H.M.); (W.Z.); (T.L.)
| | - Wenqian Zhang
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China; (J.Z.); (J.J.); (H.M.); (W.Z.); (T.L.)
| | - Tiandong Lu
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China; (J.Z.); (J.J.); (H.M.); (W.Z.); (T.L.)
| | - Dewu Long
- Key Laboratory in Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China;
| | - Fei Jiang
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China; (J.Z.); (J.J.); (H.M.); (W.Z.); (T.L.)
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Zhang G, Chen Q, Zhang Z, Gao Z, Xiao C, Wei Y, Li W. NiO x Nanoparticles Hole-Transporting Layer Regulated by Ionic Radius-Controlled Doping and Reductive Agent for Organic Solar Cells with Efficiency of 19.18. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310630. [PMID: 38029790 DOI: 10.1002/adma.202310630] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Revised: 11/19/2023] [Indexed: 12/01/2023]
Abstract
Nickel oxide (NiOx ) has garnered considerable attention as a prospective hole-transporting layer (HTL) in organic solar cells (OSCs), offering a potential solution to the stability challenges posed by traditional HTL, PEDOT:PSS, arising from acidity and hygroscopicity. Nevertheless, the lower work function (WF) of NiOx relative to donor polymers reduces charge injection efficiency in OSCs. Herein, NiOx nanoparticles are tailored through rare earth doping to optimize WF and the impact of ionic radius on their electronic properties is explored. Lanthanum (La3+ ) and yttrium (Y3+ ) ions, with larger ionic radii, are effectively doped at 1 and 3%, respectively, while scandium (Sc3+ ), with a smaller ion radius, allows enhanced 5% doping. Higher doping ratios significantly enhance WF of NiOx . A 5% Sc3+ doping raises WF to 4.99 eV from 4.77 eV for neat NiOx while maintaining high conductivity. Consequently, using 5% Sc-doped NiOx as HTL improves the power conversion efficiency (PCE) of OSCs to 17.13%, surpassing the 15.64% with the neat NiOx . Further enhancement to 18.42% is achieved by introducing the reductant catechol, outperforming the PEDOT:PSS-based devices. Additionally, when employed in a ternary blend system (D18:N3:F-BTA3), an impressive PCE of 19.18 % is realized, top-performing among reported OSCs utilizing solution-processed inorganic nanoparticles.
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Affiliation(s)
- Guangcong Zhang
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering & State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing, 100029, P. R. China
| | - Qiaomei Chen
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering & State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing, 100029, P. R. China
| | - Zhou Zhang
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering & State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing, 100029, P. R. China
| | - Zihao Gao
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering & State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing, 100029, P. R. China
| | - Chengyi Xiao
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering & State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing, 100029, P. R. China
| | - Yen Wei
- MOE Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology, Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Weiwei Li
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering & State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing, 100029, P. R. China
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Jiang Z, Wang D, Sun J, Hu B, Zhang L, Zhou X, Wu J, Hu H, Zhang J, Choy WCH, Xu B. Quenching Detrimental Reactions and Boosting Hole Extraction via Multifunctional NiO x /Perovskite Interface Passivation for Efficient and Stable Inverted Solar Cells. SMALL METHODS 2024; 8:e2300241. [PMID: 37246253 DOI: 10.1002/smtd.202300241] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2023] [Revised: 04/23/2023] [Indexed: 05/30/2023]
Abstract
Nickel oxide (NiOx ) is one of the most promising hole transport materials for inverted perovskite solar cells (PSCs). However, its application is severely restrained due to unfavorable interfacial reactions and insufficient charge carrier extraction. Herein, a multifunctional modification at the NiOx /perovskite interface is developed via introducing fluorinated ammonium salt ligand to synthetically solve the obstacles. Specifically, the interface modification can chemically convert detrimental Ni≥3+ to lower oxidation state, resulting in the elimination of interfacial redox reactions. Meanwhile, interfacial dipole is incorporated simultaneously to tune the work function of NiOx and optimize energy level alignment, which effectively promotes the charge carrier extraction. Therefore, the modified NiOx -based inverted PSCs achieve a remarkable power conversion efficiency (PCE) of 22.93%. Moreover, the unencapsulated devices obtain a significantly enhanced long-term stability, maintaining over 85% and 80% of the initial PCEs after storage in ambient air with a high relative humidity of 50-60% for 1000 h and continuous operation at maximum power point under one-sun illumination for 700 h, respectively.
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Affiliation(s)
- Zhengyan Jiang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Deng Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Jiayun Sun
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Bihua Hu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Luozheng Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Xianyong Zhou
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Jiawen Wu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Hang Hu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Jiyao Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Wallace C H Choy
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Baomin Xu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
- Key University Laboratory of Highly Efficient Utilization of Solar Energy and Sustainable Development of Guangdong, Southern University of Science and Technology, Shenzhen, 518055, China
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Xia P, Zhu T, Imran M, Pina JM, Atan O, Najarian AM, Chen H, Zhang Y, Jung E, Biondi M, Vafaie M, Li C, Grater L, Khatri A, Singh A, Hoogland S, Sargent EH. Arresting Ion Migration from the ETL Increases Stability in Infrared Light Detectors Based on III-V Colloidal Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310122. [PMID: 37983739 DOI: 10.1002/adma.202310122] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2023] [Revised: 11/09/2023] [Indexed: 11/22/2023]
Abstract
III-V colloidal quantum dots (CQDs) are of interest in infrared photodetection, and recent developments in CQDs synthesis and surface engineering have improved performance. Here this work investigates photodetector stability, finding that the diffusion of zinc ions from charge transport layers (CTLs) into the CQDs active layer increases trap density therein, leading to rapid and irreversible performance loss during operation. In an effort to prevent this, this work introduces organic blocking layers between the CQDs and ZnO layers; but these negatively impact device performance. The device is then, allowing to use a C60:BCP as top electron-transport layer (ETL) for good morphology and process compatibility, and selecting NiOX as the bottom hole-transport layer (HTL). The first round of NiOX -based devices show efficient light response but suffer from high leakage current and a low open-circuit voltage (Voc) due to pinholes. This work introduces poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) with NiOX NC to form a hybrid HTL, an addition that reduces pinhole formation, interfacial trap density, and bimolecular recombination, enhancing carrier harvesting. The photodetectors achieve 53% external quantum efficiency (EQE) at 970 nm at 1 V applied bias, and they maintain 95% of initial performance after 19 h of continuous illuminated operation. The photodetectors retain over 80% of performance after 80 days of shelf storage.
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Affiliation(s)
- Pan Xia
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Tong Zhu
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Muhammad Imran
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Joao M Pina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Ozan Atan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Amin Morteza Najarian
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Hao Chen
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Yangning Zhang
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Euidae Jung
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Margherita Biondi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Chongwen Li
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Luke Grater
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Aayushi Khatri
- STMicroelectronics, Digital Front-end Manufacturing & Technology, Technology for Optical Sensors, Fremont, California, 94538, USA
| | - Ajay Singh
- STMicroelectronics, Digital Front-end Manufacturing & Technology, Technology for Optical Sensors, Fremont, California, 94538, USA
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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9
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Bui VKH, Nguyen TP. Advances in Hole Transport Materials for Layered Casting Solar Cells. Polymers (Basel) 2023; 15:4443. [PMID: 38006166 PMCID: PMC10675163 DOI: 10.3390/polym15224443] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Revised: 11/07/2023] [Accepted: 11/15/2023] [Indexed: 11/26/2023] Open
Abstract
Huge energy consumption and running out of fossil fuels has led to the advancement of renewable sources of power, including solar, wind, and tide. Among them, solar cells have been well developed with the significant achievement of silicon solar panels, which are popularly used as windows, rooftops, public lights, etc. In order to advance the application of solar cells, a flexible type is highly required, such as layered casting solar cells (LCSCs). Organic solar cells (OSCs), perovskite solar cells (PSCs), or dye-sensitive solar cells (DSSCs) are promising LCSCs for broadening the application of solar energy to many types of surfaces. LCSCs would be cost-effective, enable large-scale production, are highly efficient, and stable. Each layer of an LCSC is important for building the complete structure of a solar cell. Within the cell structure (active material, charge carrier transport layer, electrodes), hole transport layers (HTLs) play an important role in transporting holes to the anode. Recently, diverse HTLs from inorganic, organic, and organometallic materials have emerged to have a great impact on the stability, lifetime, and performance of OSC, PSC, or DSSC devices. This review summarizes the recent advances in the development of inorganic, organic, and organometallic HTLs for solar cells. Perspectives and challenges for HTL development and improvement are also highlighted.
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Affiliation(s)
- Vu Khac Hoang Bui
- Department of Environment and Energy, Sejong University, Seoul 05006, Republic of Korea;
| | - Thang Phan Nguyen
- Department of Chemical and Biological Engineering, Gachon University, Seongnam-si 13120, Gyeonggi-do, Republic of Korea
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10
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Das S, Girish KH, Ganesh N, Narayan KS. Structured hybrid photodetectors using confined conducting polymer nanochannels. NANOSCALE ADVANCES 2023; 5:6155-6161. [PMID: 37941946 PMCID: PMC10628986 DOI: 10.1039/d3na00485f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/03/2023] [Accepted: 09/26/2023] [Indexed: 11/10/2023]
Abstract
We design and fabricate hybrid organic inorganic perovskite photodetectors that utilize hole transport layer poly(3,4-ethylene dioxythiophene):poly (styrenesulfonate) PEDOT:PSS confined in alumina nanocylinders. This structural asymmetry in the device where the alumina nanopore template is partially filled with PEDOT:PSS provides features that improve certain device characteristics. The leakage component of the current in such devices is considerably suppressed, resulting in enhanced responsivity and detectivity. The funneling aspect of the photogenerated charge carrier transit ultimately leads to fast detectors as compared to conventional perovskite detectors.
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Affiliation(s)
- Sukanya Das
- Chemistry and Physics of Materials Unit, School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research Bengaluru - 560064 India
| | - K H Girish
- Chemistry and Physics of Materials Unit, School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research Bengaluru - 560064 India
| | - N Ganesh
- Chemistry and Physics of Materials Unit, School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research Bengaluru - 560064 India
| | - K S Narayan
- Chemistry and Physics of Materials Unit, School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research Bengaluru - 560064 India
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11
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Hussien EJ, Cameron J, Findlay NJ, Taylor RGD, Johnson M, Kanibolotska L, Kanibolotsky AL, Skabara PJ. A pyridine-capped quaterthiophene as an alternative to PEDOT:PSS, processable from organic solvents and without acidity, for more stable electronic devices. MATERIALS HORIZONS 2023; 10:5087-5098. [PMID: 37681478 DOI: 10.1039/d3mh01060k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/09/2023]
Abstract
Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is a material that has become ubiquitous in the field of organic electronics. It is most commonly used as a hole transport layer (HTL) in optoelectronic devices and can be purchased commercially in various formulations with different properties. Whilst it is a most convenient material to work with, there are stability issues associated with PEDOT:PSS that are detrimental to device stability and these are due to the acidic nature of the PSS component. In this paper, we present a molecular, non-acidic alternative to PEDOT:PSS. The parent structure is composed of a quater(3,4-ethylenedioxythiophene) unit capped either side of the short chain with two pyridine units. This compound, termed (BEDOTPy)2, can be prepared chemically and electrochemically to give doped materials with a choice of counteranions. Further functionalisation via quaternisation at the nitrogen atoms allows for modification of solubility and film-forming properties. The conductivity of the doped samples can reach up to 3.75 S cm-1. The materials are non-acidic and are therefore attractive alternatives to PEDOT:PSS for device applications. We demonstrate an OLED device using the compound (BEDOTPy-EtOH-I)2PF6 as an HTL, and compare the device performance to one made with PEDOT:PSS. Due to the non-acidic nature of the molecular material, the corresponding OLED device does not show a drop in luminance over time, whereas a loss of performance is observed for the device containing PEDOT:PSS over a short period. These results are presented to introduce the parent compound (BEDOTPy)2 as an attractive alternative to PEDOT:PSS, which can be easily modified chemically to provide a plethora of potential compounds with tunable properties.
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Affiliation(s)
- Eman J Hussien
- WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ, UK.
| | - Joseph Cameron
- WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ, UK.
| | - Neil J Findlay
- WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ, UK.
| | - Rupert G D Taylor
- WestCHEM, Department of Pure and Applied Chemistry, University of Strathclyde, 295 Cathedral Street, Glasgow G1 1XL, UK
| | - Michael Johnson
- WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ, UK.
| | | | - Alexander L Kanibolotsky
- WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ, UK.
- Institute of Physical-Organic Chemistry and Coal Chemistry, 02160 Kyiv, Ukraine
| | - Peter J Skabara
- WestCHEM, School of Chemistry, University of Glasgow, Glasgow G12 8QQ, UK.
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12
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Armstrong PJ, Chapagain S, Panta R, Grapperhaus C, Druffel T. Synthesizing and formulating metal oxide nanoparticle inks for perovskite solar cells. Chem Commun (Camb) 2023; 59:12248-12261. [PMID: 37751155 DOI: 10.1039/d3cc02830e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/27/2023]
Abstract
The perovskite solar cell has commercial potential due to the low-cost of materials and manufacturing processes with cell efficiencies on par with traditional technologies. Nanomaterials have many properties that make them attractive for the perovskite devices, including low-cost inks, low temperature processing, stable material properties and good charge transport. In this feature article, the use of nanomaterials in the hole transport and electron transport layers are reviewed. Specifically, SnO2 and NiOx are the leading materials with the most promise for translation to large scale applications. The review includes a discussion of the synthesis, formulation, and processing of these nanoparticles and provides insights for their further deployment towards commercially viable perovskite solar cells.
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Affiliation(s)
- Peter J Armstrong
- University of Louisville, Department of Chemistry, Louisville, KY 40292, USA.
| | - Sashil Chapagain
- University of Louisville, Department of Chemistry, Louisville, KY 40292, USA.
| | - Rojita Panta
- University of Louisville, Department of Chemistry, Louisville, KY 40292, USA.
| | - Craig Grapperhaus
- University of Louisville, Department of Chemistry, Louisville, KY 40292, USA.
| | - Thad Druffel
- University of Louisville, Conn Center for Renewable Energy Research, Louisville, KY 40292, USA
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13
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Zhang J, Deng W, Weng Y, Li X, Mao H, Lu T, Zhang W, Long D, Jiang F. Experimentally revealed and theoretically certified synergistic electronic interaction of V-doped CoS for facilitating the oxygen evolution reaction. Phys Chem Chem Phys 2023; 25:21661-21672. [PMID: 37551545 DOI: 10.1039/d3cp02849f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/09/2023]
Abstract
Since electrocatalytic oxygen evolution (OER) is a four-electron transfer reaction with very slow kinetics, there is great competition to develop cheap, durable and efficient catalysts for oxygen evolution. A molecular model is designed for density functional theory (DFT) simulation calculations to guide the experiment, and this hypothesis is fully supported by the experimental data. Herein, regulating the composition and morphology of the bimetallic VCo and MoCo sulfide and monometallic sulfide nanoparticles (NPs) at the oil-water interface was achieved via a one-step hydrothermal method for efficient and durable OER electrocatalysts. Compared to CoS and MoCoS, the VCoS NPs show superior OER performance. By adjusting the atomic composition ratio of the VCoS nanoparticles, the VCoS NPs (1 : 2 : 1.5 mole ratio) showed a significant OER overpotential η = 255 mV (10 mA cm-2), and their outstanding stability was demonstrated after 48 h of continuous testing. The CoS and MoCoS NPs were also tested for comparison. Density functional theory (DFT) calculations showed that appropriate V doping (VCoS) can heighten the density of states (DOS) of the Fermi level, which generates more charge density and reduces the intermediate adsorption energy. This study not only provides efficient and powerful integrated catalysts, but also details a DFT calculation model guided by experiments to regulate the oxygen insertion technology, thus leading to the design of ideal materials and enabling more far-reaching applications in electrocatalysis.
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Affiliation(s)
- Jingjing Zhang
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China.
| | - Wei Deng
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China.
| | - Yun Weng
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Textile, Donghua University, Shanghai 201620, China
| | - Xiang Li
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China.
| | - Haifang Mao
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China.
| | - Tiandong Lu
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China.
| | - Wenqian Zhang
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China.
| | - Dewu Long
- Key Laboratory in Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Fei Jiang
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Shanghai 201418, China.
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Li S, Wang X, Li H, Fang J, Wang D, Xie G, Lin D, He S, Qiu L. Low-Temperature Chemical Bath Deposition of Conformal and Compact NiO X for Scalable and Efficient Perovskite Solar Modules. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301110. [PMID: 37086142 DOI: 10.1002/smll.202301110] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 04/10/2023] [Indexed: 05/03/2023]
Abstract
A scalable and low-cost deposition of high-quality charge transport layers and photoactive perovskite layers are the grand challenges for large-area and efficient perovskite solar modules and tandem cells. An inverted structure with an inorganic hole transport layer is expected for long-term stability. Among various hole transport materials, nickel oxide has been investigated for highly efficient and stable perovskite solar cells. However, the reported deposition methods are either difficult for large-scale conformal deposition or require a high vacuum process. Chemical bath deposition is supposed to realize a uniform, conformal, and scalable coating by a solution process. However, the conventional chemical bath deposition requires a high annealing temperature of over 400 °C. In this work, an amino-alcohol ligand-based controllable release and deposition of NiOX using chemical bath deposition with a low calcining temperature of 270 °C is developed. The uniform and conformal in-situ growth precursive films can be adjusted by tuning the ligand structure. The inverted structured perovskite solar cells and large-area solar modules reached a champion PCE of 22.03% and 19.03%, respectively. This study paves an efficient, low-temperature, and scalable chemical bath deposition route for large-area NiOX thin films for the scalable fabrication of highly efficient perovskite solar modules.
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Affiliation(s)
- Sibo Li
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
- SUSTech Energy Institute for Carbon Neutrality, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Xin Wang
- SUSTech Energy Institute for Carbon Neutrality, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Huan Li
- SUSTech Energy Institute for Carbon Neutrality, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Jun Fang
- SUSTech Energy Institute for Carbon Neutrality, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Daozeng Wang
- SUSTech Energy Institute for Carbon Neutrality, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Guanshui Xie
- SUSTech Energy Institute for Carbon Neutrality, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Dongxu Lin
- SUSTech Energy Institute for Carbon Neutrality, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Sisi He
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
- Flexible Printed Electronics Technology Center, School of Science, Harbin Institute of Technology Shenzhen, Nanshan District, Shenzhen, 518055, P. R. China
| | - Longbin Qiu
- SUSTech Energy Institute for Carbon Neutrality, Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
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15
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Ghosh S, Patel M, Lee J, Kim J. All-Oxide Transparent Photodetector Array for Ultrafast Response through Self-Powered Excitonic Photovoltage Operation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301702. [PMID: 37096932 DOI: 10.1002/smll.202301702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Revised: 03/26/2023] [Indexed: 05/03/2023]
Abstract
Can photodetectors be transparent and operate in self-powered mode? Is it possible to achieve invisible electronics, independent of the external power supply system, for on-site applications? Here, a ZnO/NiO heterojunction-based high-functional transparent ultraviolet (UV) photodetector operating in the self-powered photovoltaic mode with outstanding responsivity and detectivity values of 6.9 A W-1 and 8.0 × 1012 Jones, respectively, is reported. The highest IUV /Idark value of 8.9 × 104 is attained at a wavelength of 385 nm, together with a very small dark current value of 9.15 × 10-12 A. A large-scale sputtering method is adopted to deposit the heterostructure of n-ZnO and p-NiO sequentially. This deposition instinctively forms an abrupt junction, resulting in a high-quality heterojunction device. Moreover, developing a ZnO/NiO-heterojunction-based 4 × 5 matrix array with an output photovoltage of 4.5 V is preferred for integrating photodetectors into sensing and imaging systems. This transparent UV photodetector exhibits the fastest photo-response time (83 ns) reported for array configurations, which is achieved using an exciton-induced photovoltage based on a neutral donor-bound exciton. Overall, this study provides a simple method for achieving a high-performance large-scale transparent UV photodetector with a self-powered array configuration.
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Affiliation(s)
- Shuvaraj Ghosh
- Photoelectric and Energy Device Application Lab (PEDAL) and Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, Incheon, 22012, South Korea
- Department of Electrical Engineering, Incheon National University, Incheon, 22012, South Korea
| | - Malkeshkumar Patel
- Photoelectric and Energy Device Application Lab (PEDAL) and Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, Incheon, 22012, South Korea
- Department of Electrical Engineering, Incheon National University, Incheon, 22012, South Korea
| | - Junsik Lee
- Photoelectric and Energy Device Application Lab (PEDAL) and Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, Incheon, 22012, South Korea
- Department of Electrical Engineering, Incheon National University, Incheon, 22012, South Korea
| | - Joondong Kim
- Photoelectric and Energy Device Application Lab (PEDAL) and Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, Incheon, 22012, South Korea
- Department of Electrical Engineering, Incheon National University, Incheon, 22012, South Korea
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16
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Hadiyal K, Ganesan R, Rastogi A, Thamankar R. Bio-inspired artificial synapse for neuromorphic computing based on NiO nanoparticle thin film. Sci Rep 2023; 13:7481. [PMID: 37160948 PMCID: PMC10169867 DOI: 10.1038/s41598-023-33752-5] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2023] [Accepted: 04/18/2023] [Indexed: 05/11/2023] Open
Abstract
The unprecedented need for data processing in the modern technological era has created opportunities in neuromorphic devices and computation. This is primarily due to the extensive parallel processing done in our human brain. Data processing and logical decision-making at the same physical location are an exciting aspect of neuromorphic computation. For this, establishing reliable resistive switching devices working at room temperature with ease of fabrication is important. Here, a reliable analog resistive switching device based on Au/NiO nanoparticles/Au is discussed. The application of positive and negative voltage pulses of constant amplitude results in enhancement and reduction of synaptic current, which is consistent with potentiation and depression, respectively. The change in the conductance resulting in such a process can be fitted well with double exponential growth and decay, respectively. Consistent potentiation and depression characteristics reveal that non-ideal voltage pulses can result in a linear dependence of potentiation and depression. Long-term potentiation (LTP) and Long-term depression (LTD) characteristics have been established, which are essential for mimicking the biological synaptic applications. The NiO nanoparticle-based devices can also be used for controlled synaptic enhancement by optimizing the electric pulses, displaying typical learning-forgetting-relearning characteristics.
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Affiliation(s)
- Keval Hadiyal
- Centre for Functional Materials, Vellore Institute of Technology, Vellore, TN, 632014, India
- Department of Physics, School of Advanced Sciences, Vellore Institute of Technology, Vellore, TN, 632014, India
| | - Ramakrishnan Ganesan
- Department of Chemistry, Birla Institute of Technology and Science (BITS), Pilani, Hyderabad Campus, Jawahar Nagar, Kapra Mandal, Medchal District, Hyderabad, Telangana, 500078, India
| | - A Rastogi
- Centre for Functional Materials, Vellore Institute of Technology, Vellore, TN, 632014, India
| | - R Thamankar
- Centre for Functional Materials, Vellore Institute of Technology, Vellore, TN, 632014, India.
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17
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Zhai S, Gong J, Feng Y, Que Z, Mao W, He X, Xie Y, Li X, Chu L. Multilevel resistive switching in stable all-inorganic n-i-p double perovskite memristor. iScience 2023; 26:106461. [PMID: 37091246 PMCID: PMC10119588 DOI: 10.1016/j.isci.2023.106461] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 03/13/2023] [Accepted: 03/17/2023] [Indexed: 04/08/2023] Open
Abstract
Memristors are promising information storage devices for commercial applications because of their long endurance and low power consumption. Particularly, perovskite memristors have revealed excellent resistive switching (RS) properties owing to the fast ion migration and solution fabrication process. Here, an n-i-p type double perovskite memristor with "ITO/SnO2/Cs2AgBiBr6/NiOx/Ag" architecture was developed and demonstrated to reveal three resistance states because of the p-n junction electric field coupled with ion migration. The devices exhibited reliable filamentary with an on/off ratio exceeding 50. The RS characteristics remained unchanged after 1000 s read and 300 switching cycles. The synaptic functions were examined through long-term depression and potentiation measurements. Significantly, the device still worked after one year to reveal long-term stability because of the all-inorganic layers. This work indicates a novel idea for designing a multistate memristor by utilizing the p-n junction unidirectional conductivity during the forward and reverse scanning.
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Affiliation(s)
- Shuaibo Zhai
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Jiaqi Gong
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Yifei Feng
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Zhongbao Que
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Weiwei Mao
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xuemin He
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Yannan Xie
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
- Corresponding author
| | - Xing’ao Li
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
- Corresponding author
| | - Liang Chu
- Institute of Carbon Neutrality and New Energy, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
- The MOE Key Laboratory of Special Machine and High Voltage Apparatus, Shenyang University of Technology, Shenyang, 110870, China
- Corresponding author
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18
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Shang G, Tang L, Wu G, Yuan S, Jia M, Guo X, Zheng X, Wang W, Yue B, Teng KS. High-Performance NiO/TiO 2/ZnO Photovoltaic UV Detector. SENSORS (BASEL, SWITZERLAND) 2023; 23:2741. [PMID: 36904944 PMCID: PMC10007556 DOI: 10.3390/s23052741] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Revised: 02/16/2023] [Accepted: 02/22/2023] [Indexed: 06/18/2023]
Abstract
The ultraviolet (UV) photodetector has found many applications, ranging from optical communication to environmental monitoring. There has been much research interest in the development of metal oxide-based UV photodetectors. In this work, a nano-interlayer was introduced in a metal oxide-based heterojunction UV photodetector to enhance the rectification characteristics and therefore the device performance. The device, which consists of nickel oxide (NiO) and zinc oxide (ZnO) sandwiching an ultrathin dielectric layer of titanium dioxide (TiO2), was prepared by radio frequency magnetron sputtering (RFMS). After annealing, the NiO/TiO2/ZnO UV photodetector exhibited a rectification ratio of 104 under UV irradiation of 365 nm at zero bias. The device also demonstrated a high responsivity of 291 A/W and a detectivity of 6.9 × 1011 Jones at +2 V bias. Such a device structure provides a promising future for metal oxide-based heterojunction UV photodetectors in a wide range of applications.
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Affiliation(s)
- Guoxin Shang
- School of Materials and Energy, Yunnan University, Kunming 650500, China
- Kunming Institute of Physics, Kunming 650223, China
- Yunnan Key Laboratory of Advanced Photoelectric Materials and Devices, Kunming 650223, China
| | - Libin Tang
- Kunming Institute of Physics, Kunming 650223, China
- Yunnan Key Laboratory of Advanced Photoelectric Materials and Devices, Kunming 650223, China
| | - Gang Wu
- Kunming Institute of Physics, Kunming 650223, China
- Yunnan Key Laboratory of Advanced Photoelectric Materials and Devices, Kunming 650223, China
| | | | - Menghan Jia
- Kunming Institute of Physics, Kunming 650223, China
- Yunnan Key Laboratory of Advanced Photoelectric Materials and Devices, Kunming 650223, China
- School of Physics and Astronomy, Yunnan University, Kunming 650500, China
| | - Xiaopeng Guo
- Kunming Institute of Physics, Kunming 650223, China
- Yunnan Key Laboratory of Advanced Photoelectric Materials and Devices, Kunming 650223, China
| | - Xin Zheng
- Kunming Institute of Physics, Kunming 650223, China
| | - Wei Wang
- Kunming Institute of Physics, Kunming 650223, China
| | - Biao Yue
- Kunming Institute of Physics, Kunming 650223, China
| | - Kar Seng Teng
- Department of Electronic and Electrical Engineering, Swansea University, Bay Campus, Fabian Way, Swansea SA1 8EN, UK
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Park MH, Kim MG, Ma JH, Jeong JH, Ha HJ, Kim W, Park S, Kang SJ. Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Solution-Processable Highly Conductive Spinel Structure CuCo 2O 4 Hole Injection Layer. MATERIALS (BASEL, SWITZERLAND) 2023; 16:972. [PMID: 36769979 PMCID: PMC9919813 DOI: 10.3390/ma16030972] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Revised: 01/14/2023] [Accepted: 01/18/2023] [Indexed: 06/18/2023]
Abstract
Charge imbalance in quantum-dot light-emitting diodes (QLEDs) causes emission degradation. Therefore, many studies focused on improving hole injection into the QLEDs-emitting layer owing to lower hole conductivity compared to electron conductivity. Herein, CuCo2O4 has a relatively higher hole conductivity than other binary oxides and can induce an improved charge balance. As the annealing temperature decreases, the valence band maximum (VBM) of CuCo2O4 shifts away from the Fermi energy level (EF), resulting in an enhanced hole injection through better energy level alignment with hole transport layer. The maximum luminance and current efficiency of the CuCo2O4 hole injection layer (HIL) of the QLED were measured as 93,607 cd/m2 and 11.14 cd/A, respectively, resulting in a 656% improvement in luminous performance of QLEDs compared to conventional metal oxide HIL-based QLEDs. These results demonstrate that the electrical properties of CuCo2O4 can be improved by adjusting the annealing temperature, suggesting that solution-processed spinel can be applied in various optoelectronic devices.
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Affiliation(s)
- Min Ho Park
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Min Gye Kim
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Jin Hyun Ma
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Jun Hyung Jeong
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Hyoun Ji Ha
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Wonsik Kim
- Advanced Analysis Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea
| | - Soohyung Park
- Advanced Analysis Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea
| | - Seong Jun Kang
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
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20
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Rasa Hosseinzade M, Naji L, Hasannezhad F. Electrochemical deposition of NiO bunsenite nanostructures with different morphologies as the hole transport layer in polymer solar cells. J Electroanal Chem (Lausanne) 2022. [DOI: 10.1016/j.jelechem.2022.116955] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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21
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Liu Z, Li X, Zou R, Zhou Z, Ma Q, Zhang P. Deciphering the quaternary structure of PEDOT:PSS aqueous dispersion with small-angle scattering. POLYMER 2022. [DOI: 10.1016/j.polymer.2022.125415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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22
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Gai Y, Deng W, Hu J, Li D, Xie W, Li X, Zhang J, Long D, Jiang F. Construction of Co/Fe co-embedded in benzene tricarboxylic acid with modulated coordination environment for accelerated oxygen evolution reaction. Colloids Surf A Physicochem Eng Asp 2022. [DOI: 10.1016/j.colsurfa.2022.129766] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
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23
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Ahmad S, Ma R, Zheng J, Gary Kwok CK, Zhou Q, Ren Z, Kim J, He X, Zhang X, Yu KM, Choy WCH. Suppressing Nickel Oxide/Perovskite Interface Redox Reaction and Defects for Highly Performed and Stable Inverted Perovskite Solar Cells. SMALL METHODS 2022; 6:e2200787. [PMID: 36126166 DOI: 10.1002/smtd.202200787] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Revised: 08/16/2022] [Indexed: 06/15/2023]
Abstract
The inorganic hole transport layer of nickel oxide (NiOx ) has shown highly efficient, low-cost, and scalable in perovskite photovoltaics. However, redox reactions at the interface between NiOx and perovskites limit their commercialization. In this study, ABABr (4-(2-Aminoethyl) benzoic acid bromide) between the NiOx and different perovskite layers to address the issues has been introduced. How the ABABr interacts with NiOx and perovskites is experimentally and theoretically investigated. These results show that the ABABr molecule chemically reacts with the NiOx via electrostatic attraction on one side, whereas on the other side, it forms a strong hydrogen bond via the NH3 + group with perovskites layers, thus directly diminishing the redox reaction between the NiOx and perovskites layers and passivating the layer surfaces. Additionally, the ABABr interface modification leads to significant improvements in perovskite film morphology, crystallization, and band alignment. The perovskites solar cells (PSCs) based on an ABABr interface modification show power conversion efficiency (PCE) improvement by over 13% and maintain over 90% of its PCE after continuous operation at maximum power point for over 500 h. The work not only contributes to the development of novel interlayers for stable PSCs but also to the understanding of how to prevent interface redox reactions.
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Affiliation(s)
- Sajjad Ahmad
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China
| | - Ruiman Ma
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China
| | - Jiawei Zheng
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China
| | - Cheuk Kai Gary Kwok
- Department of Physics, The City University of Hong Kong, Kowloon, Hong Kong, China
| | - Qisen Zhou
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhenwei Ren
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China
| | - Jinwook Kim
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China
| | - Xinjun He
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China
| | - Xiaoliang Zhang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Kin Man Yu
- Department of Physics, The City University of Hong Kong, Kowloon, Hong Kong, China
| | - Wallace C H Choy
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China
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24
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Xie W, Deng W, Hu J, Li D, Gai Y, Li X, Zhang J, Long D, Jiang F. Construction of Ferrocene-based bimetallic CoFe-FcDA nanosheets for efficient oxygen evolution reaction. MOLECULAR CATALYSIS 2022. [DOI: 10.1016/j.mcat.2022.112502] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
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25
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Deng W, Gai Y, Duan H, Chen Z, Hu X, Han S, Xu N, Qiao S, Yao Z, Jiang F. Partially delocalized charge in crystalline Co-S-Se/NiO x nanocomposites for boosting electrocatalytic oxygen evolution. Phys Chem Chem Phys 2022; 24:10838-10850. [PMID: 35506176 DOI: 10.1039/d1cp05350g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Although reasonably specified and adjustable preparation of nanostructures with specific morphologies, ordered chemical compositions and electronic structures involving advanced energy chemistries is an important research area, high-efficiency, stable, and low-cost electrocatalysts for water splitting are greatly desirable and challenging. In this study, partially delocalized Co-S-Se ultra-thin nanosheets are obtained via a liquid-liquid interface-mediated strategy at an oil-water interface. These Co-S-Se ultra-thin nanosheets exhibit different-sized lamellar structures and have an average thickness of 0.83 nm. The ternary ultra-thin Co0.45S0.38Se0.17 nanosheets demonstrate excellent performance for the OER, accompanied by an overpotential of 290 mV (1.52 V vs. RHE) at 10 mA cm-2, and a Tafel slope of 74.5 mV dec-1. In the meantime, the catalyst recombined with a stoichiometry NiOx catalyst to form a composite interface, which also exhibited a good OER performance, with an overpotential of 260 mV at 10 mA cm-2 and a smaller Tafel slope of 53.9 mV dec-1. The nanosheets can rearrange the electronic density near the metal catalytic centers and increase the electron transfer. DFT calculations indicate that the partially delocalized charges can improve electrocatalytic performances, demonstrating modulated electroreduction properties. Due to the special atomic and electronic structure of the ternary transition metal alloy chalcogenide, the compound has great potential for energy storage, which will help in the rational design and synthesis of high-efficiency electrocatalysts.
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Affiliation(s)
- Wei Deng
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Haiquan Road 100, Shanghai 201418, China.
| | - Yuping Gai
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Haiquan Road 100, Shanghai 201418, China.
| | - Haitao Duan
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Haiquan Road 100, Shanghai 201418, China.
| | - Zhide Chen
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Haiquan Road 100, Shanghai 201418, China.
| | - Xiaojun Hu
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Haiquan Road 100, Shanghai 201418, China.
| | - Sheng Han
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Haiquan Road 100, Shanghai 201418, China.
| | - Niwei Xu
- College of Medicine Engineering, Hunan Traditional Chinese Medical College, Xueshi Road 300, Hunan 410208, China
| | - Shanlin Qiao
- College of Chemistry and Pharmaceutical Engineering, Hebei University of Science and Technology, Yuxiang Street 26, Shijiazhuang 050018, China.
| | - Zijian Yao
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Haiquan Road 100, Shanghai 201418, China.
| | - Fei Jiang
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, Haiquan Road 100, Shanghai 201418, China.
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26
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Zhang P, Li M, Chen WC. A Perspective on Perovskite Solar Cells: Emergence, Progress, and Commercialization. Front Chem 2022; 10:802890. [PMID: 35480386 PMCID: PMC9035841 DOI: 10.3389/fchem.2022.802890] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2021] [Accepted: 02/17/2022] [Indexed: 01/11/2023] Open
Abstract
With rapid progress in light-to-electric conversion efficiencies, perovskite solar cells (PSCs) have exhibited great potential as next-generation low-cost, efficient photovoltaic technology. In this perspective, we briefly review the development of PSCs from discovery to laboratory research to commercializing progress. The past several decades have witnessed great achievement in device efficiency and stability due to tremendous research efforts on compositional, process, and interfacial engineering. Regarding commercial applications, we expound the merits and disadvantages of PSCs compared to the existing silicon photovoltaic technologies. Although PSCs promise solution processability and low manufacturing cost, their limited stability and element toxicity should to be addressed on the path to commercialization. Finally, we provide future perspectives on commercialization of PSCs in the photovoltaic marketplace. It is suggested that PSCs will be more promising in low-cost modules and tandem configurations.
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Affiliation(s)
- Pengyu Zhang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, China
- Beijing JAYU New Energy Technology Development Co., Ltd., JAYU Group, Beijing, China
| | - Menglin Li
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, China
| | - Wen-Cheng Chen
- School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, China
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27
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Arildii D, Kim K, Lee Y, Choi H, Jang C, Eom SH, Mun SA, Yoon SC, Jin SH, Park J, Kim B. Highly Sensitive and Durable Organic Photodiodes Based on Long-Term Storable NiO x Nanoparticles. ACS APPLIED MATERIALS & INTERFACES 2022; 14:14410-14421. [PMID: 35312277 DOI: 10.1021/acsami.2c01693] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Organic optoelectronic devices that can be fabricated at low cost have attracted considerable attention because they can absorb light over a wide frequency range and have high conversion efficiency, as well as being lightweight and flexible. Moreover, their performance can be significantly affected by the choice of the charge-selective interlayer material. Nonstoichiometric nickel oxide (NiOx) is an excellent material for the hole-transporting layer (HTL) of organic optoelectronic devices because of the good alignment of its valence band position with the highest occupied molecular orbital level of many p-type polymers. Herein, we report a simple low-temperature process for the synthesis of NiOx nanoparticles (NPs) that can be well dispersed in solution for long-term storage and easily used to form thin NiOx NP layers. NiOx NP-based organic photodiode (OPD) devices demonstrated high specific detectivity (D*) values of 1012-1013 jones under various light intensities and negative biases. The D* value of the NiOx NP-based OPD device was 4 times higher than that of a conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)-based device, an enhancement that originated mainly from the 16 times decreased leakage current. The NiOx NP-based OPD device demonstrated better reliability over a wide range of light intensities and operational biases in comparison to a device with a conventional sol-gel-processed NiOx film. More importantly, the NiOx NP-based OPD showed long-term device stability superior to those of the PEDOT:PSS and sol-gel-processed NiOx-based devices. We highlight that our low-temperature solution-processable NiOx NP-based HTL could become a crucial component in the fabrication of stable high-performance OPDs.
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Affiliation(s)
- Dashjargal Arildii
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Kangyong Kim
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Youngwan Lee
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Huijeong Choi
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Changhee Jang
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Seung Hun Eom
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea
| | - Sang A Mun
- School of Life Sciences, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Sung Cheol Yoon
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea
| | - Sung-Ho Jin
- Department of Chemistry Education, Graduate Department of Chemical Materials, Institute for Plastic Information and Energy Materials, Pusan National University, Busan 46241, Republic of Korea
| | - Jongnam Park
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Biomedical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - BongSoo Kim
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
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28
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Chen SH, Wu YT, Hsiao SH, Tseng C. Silver-doped nickel oxide as an efficient hole-transport layer in polymer light-emitting diodes. Microsc Res Tech 2022; 85:2390-2396. [PMID: 35234327 DOI: 10.1002/jemt.24094] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Revised: 01/17/2022] [Accepted: 02/20/2022] [Indexed: 11/12/2022]
Abstract
In this study, silver-doped nickel oxide (NiO:Ag) was successfully synthesized by a sol-gel method and spin-coated on indium titanium oxide (ITO) as a hole-transport layer for polymer light-emitting diodes (PLED). After the calcination of the NiO:Ag/ITO substrate at 300°C for 1 h, stable conductive regions and the mean work-function on the NiO:Ag/ITO surface reached 89.43% and 5.53 eV, respectively, which were greater than those on a conventional poly [3,4-ethylenedioxythiophene] polystyrene sulfonate (PEDOT:PSS)/ITO surface. When NiO:Ag (300°C)/ITO was used as an anode window substrate for PLEDs, the enhancement factor for the average current efficiency in the current-density range of 20-50 mA/cm2 and electroluminescence intensity at an applied bias of 8.0 V were 4.60 and 2.55 times, respectively, in comparison with those of PLED based on a conventional PEDOT:PSS/ITO anode.
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Affiliation(s)
- Sy-Hann Chen
- Department of Electrophysics, National Chiayi University, Chiayi, Taiwan
| | - Yung-Teng Wu
- Department of Electrophysics, National Chiayi University, Chiayi, Taiwan
| | - Shih-Hsiang Hsiao
- Department of Electrophysics, National Chiayi University, Chiayi, Taiwan
| | - Cliff Tseng
- Enabling Nanoscale Advances, Park Systems Corporation, Hsinchu, Taiwan
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29
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Anrango-Camacho C, Pavón-Ipiales K, Frontana-Uribe BA, Palma-Cando A. Recent Advances in Hole-Transporting Layers for Organic Solar Cells. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:443. [PMID: 35159788 PMCID: PMC8840354 DOI: 10.3390/nano12030443] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Revised: 01/19/2022] [Accepted: 01/24/2022] [Indexed: 01/27/2023]
Abstract
Global energy demand is increasing; thus, emerging renewable energy sources, such as organic solar cells (OSCs), are fundamental to mitigate the negative effects of fuel consumption. Within OSC's advancements, the development of efficient and stable interface materials is essential to achieve high performance, long-term stability, low costs, and broader applicability. Inorganic and nanocarbon-based materials show a suitable work function, tunable optical/electronic properties, stability to the presence of moisture, and facile solution processing, while organic conducting polymers and small molecules have some advantages such as fast and low-cost production, solution process, low energy payback time, light weight, and less adverse environmental impact, making them attractive as hole transporting layers (HTLs) for OSCs. This review looked at the recent progress in metal oxides, metal sulfides, nanocarbon materials, conducting polymers, and small organic molecules as HTLs in OSCs over the past five years. The endeavors in research and technology have optimized the preparation and deposition methods of HTLs. Strategies of doping, composite/hybrid formation, and modifications have also tuned the optical/electrical properties of these materials as HTLs to obtain efficient and stable OSCs. We highlighted the impact of structure, composition, and processing conditions of inorganic and organic materials as HTLs in conventional and inverted OSCs.
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Affiliation(s)
- Cinthya Anrango-Camacho
- Grupo de Investigación Aplicada en Materiales y Procesos (GIAMP), School of Chemical Sciences and Engineering, Yachay Tech University, Hda. San José s/n y Proyecto Yachay, Urcuqui 100119, Ecuador; (C.A.-C.); (K.P.-I.)
| | - Karla Pavón-Ipiales
- Grupo de Investigación Aplicada en Materiales y Procesos (GIAMP), School of Chemical Sciences and Engineering, Yachay Tech University, Hda. San José s/n y Proyecto Yachay, Urcuqui 100119, Ecuador; (C.A.-C.); (K.P.-I.)
| | - Bernardo A. Frontana-Uribe
- Centro Conjunto de Investigación en Química Sustentable UAEMex-UNAM, Carretera Toluca Atlacomulco, Km 14.5, Toluca 50200, Mexico;
- Instituto de Química, Universidad Nacional Autónoma de México, Circuito Exterior, Ciudad Universitaria, Ciudad de México 04510, Mexico
| | - Alex Palma-Cando
- Grupo de Investigación Aplicada en Materiales y Procesos (GIAMP), School of Chemical Sciences and Engineering, Yachay Tech University, Hda. San José s/n y Proyecto Yachay, Urcuqui 100119, Ecuador; (C.A.-C.); (K.P.-I.)
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30
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He X, Cai L, Chen H, Yin P, Yin Z, Zheng Q. A Dual Post-Treatment Method for Improving the Performance of Ternary NiMgO Semiconductor Interfacial Layers and Their Organic Solar Cells ※. ACTA CHIMICA SINICA 2022. [DOI: 10.6023/a21120622] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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31
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Ho LDA, Nam VB, Lee D. Flexible Ni/NiO x-Based Sensor for Human Breath Detection. MATERIALS (BASEL, SWITZERLAND) 2021; 15:47. [PMID: 35009195 PMCID: PMC8746032 DOI: 10.3390/ma15010047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/26/2021] [Revised: 12/16/2021] [Accepted: 12/20/2021] [Indexed: 06/14/2023]
Abstract
We developed a simple methodology to fabricate an Ni/NiOx-based flexible breath sensor by a single-step laser digital patterning process of solution-processed NiOx thin-film deposited using NiOx nanoparticle ink. Laser-induced reductive sintering phenomenon enables for the generation of three parts of Ni electrodes and two narrow NiOx-sensing channels in between, defined on a single layer on a thin flexible polymer substrate. The Ni/NiOx-based breath sensor efficiently detects human breath at a relatively low operating temperature (50 °C) with fast response/recovery times (1.4 s/1.7 s) and excellent repeatability. The mechanism of the gas-sensing ability enhancement of the sensor was investigated by X-ray photoelectron spectroscopy analysis. Furthermore, by decoupling of the temperature effect from the breathing gas, the response of the sensor due to the temperature alone and due to the chemical components in the breathing gas could be separately evaluated. Finally, bending and cyclic bending tests (10,000 cycles) demonstrated the superior mechanical stability of the flexible breath sensor.
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Affiliation(s)
| | | | - Daeho Lee
- Laser and Thermal Engineering Laboratory, Department of Mechanical Engineering, Gachon University, Seongnam 13120, Korea; (L.D.-A.H.); (V.B.N.)
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32
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Bellani S, Bartolotta A, Agresti A, Calogero G, Grancini G, Di Carlo A, Kymakis E, Bonaccorso F. Solution-processed two-dimensional materials for next-generation photovoltaics. Chem Soc Rev 2021; 50:11870-11965. [PMID: 34494631 PMCID: PMC8559907 DOI: 10.1039/d1cs00106j] [Citation(s) in RCA: 35] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2021] [Indexed: 12/12/2022]
Abstract
In the ever-increasing energy demand scenario, the development of novel photovoltaic (PV) technologies is considered to be one of the key solutions to fulfil the energy request. In this context, graphene and related two-dimensional (2D) materials (GRMs), including nonlayered 2D materials and 2D perovskites, as well as their hybrid systems, are emerging as promising candidates to drive innovation in PV technologies. The mechanical, thermal, and optoelectronic properties of GRMs can be exploited in different active components of solar cells to design next-generation devices. These components include front (transparent) and back conductive electrodes, charge transporting layers, and interconnecting/recombination layers, as well as photoactive layers. The production and processing of GRMs in the liquid phase, coupled with the ability to "on-demand" tune their optoelectronic properties exploiting wet-chemical functionalization, enable their effective integration in advanced PV devices through scalable, reliable, and inexpensive printing/coating processes. Herein, we review the progresses in the use of solution-processed 2D materials in organic solar cells, dye-sensitized solar cells, perovskite solar cells, quantum dot solar cells, and organic-inorganic hybrid solar cells, as well as in tandem systems. We first provide a brief introduction on the properties of 2D materials and their production methods by solution-processing routes. Then, we discuss the functionality of 2D materials for electrodes, photoactive layer components/additives, charge transporting layers, and interconnecting layers through figures of merit, which allow the performance of solar cells to be determined and compared with the state-of-the-art values. We finally outline the roadmap for the further exploitation of solution-processed 2D materials to boost the performance of PV devices.
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Affiliation(s)
- Sebastiano Bellani
- BeDimensional S.p.A., Via Lungotorrente Secca 30R, 16163 Genova, Italy.
- Istituto Italiano di Tecnologia, Graphene Labs, via Moreogo 30, 16163 Genova, Italy
| | - Antonino Bartolotta
- CNR-IPCF, Istituto per i Processi Chimico-Fisici, Via F. Stagno D'alcontres 37, 98158 Messina, Italy
| | - Antonio Agresti
- CHOSE - Centre for Hybrid and Organic Solar Energy, University of Rome "Tor Vergata", via del Politecnico 1, 00133 Roma, Italy
| | - Giuseppe Calogero
- CNR-IPCF, Istituto per i Processi Chimico-Fisici, Via F. Stagno D'alcontres 37, 98158 Messina, Italy
| | - Giulia Grancini
- University of Pavia and INSTM, Via Taramelli 16, 27100 Pavia, Italy
| | - Aldo Di Carlo
- CHOSE - Centre for Hybrid and Organic Solar Energy, University of Rome "Tor Vergata", via del Politecnico 1, 00133 Roma, Italy
- L.A.S.E. - Laboratory for Advanced Solar Energy, National University of Science and Technology "MISiS", 119049 Leninskiy Prosect 6, Moscow, Russia
| | - Emmanuel Kymakis
- Department of Electrical & Computer Engineering, Hellenic Mediterranean University, Estavromenos 71410 Heraklion, Crete, Greece
| | - Francesco Bonaccorso
- BeDimensional S.p.A., Via Lungotorrente Secca 30R, 16163 Genova, Italy.
- Istituto Italiano di Tecnologia, Graphene Labs, via Moreogo 30, 16163 Genova, Italy
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CuI/Spiro-OMeTAD Double-Layer Hole Transport Layer to Improve Photovoltaic Performance of Perovskite Solar Cells. COATINGS 2021. [DOI: 10.3390/coatings11080978] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The hole transport layer (HTL) is one of the main factors affecting the efficiency and stability of perovskite solar cells (PSCs). However, obtaining HTLs with the desired properties through current preparation techniques remains a challenge. In the present study, we propose a new method which can be used to achieve a double-layer HTL, by inserting a CuI layer between the perovskite layer and Spiro-OMeTAD layer via a solution spin coating process. The CuI layer deposited on the surface of the perovskite film directly covers the rough perovskite surface, covering the surface defects of the perovskite, while a layer of CuI film avoids the defects caused by Spiro-OMetad pinholes. The double-layer HTLs improve roughness and reduce charge recombination of the Spiro-OMeTAD layer, thereby resulting in superior hole extraction capabilities and faster hole mobility. The CuI/Spiro-OMeTAD double-layer HTLs-based devices were prepared in N2 gloveboxes and obtained an optimized PCE (photoelectric conversion efficiency) of 17.44%. Furthermore, their stability was improved due to the barrier effect of the inorganic CuI layer on the entry of air and moisture into the perovskite layer. The results demonstrate that another deposited CuI film is a promising method for realizing high-performance and air-stable PSCs.
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Tran HN, Dao DQ, Yoon YJ, Shin YS, Choi JS, Kim JY, Cho S. Inverted Polymer Solar Cells with Annealing-Free Solution-Processable NiO. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2101729. [PMID: 34165888 DOI: 10.1002/smll.202101729] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2021] [Indexed: 06/13/2023]
Abstract
Nickel oxide (NiO) offers intrinsic p-type behavior and high thermal and chemical stability, making it promising as a hole transport layer (HTL) material in inverted organic solar cells. However, its use in this application has been rare because of a wettability problem caused by use of water as base solvent and high-temperature annealing requirements. In the present work, an annealing-free solution-processable method for NiO deposition is developed and applied in both conventional and inverted non-fullerene polymer solar cells. To overcome the wettability problem, the typical DI water solvent is replaced with a mixed solvent of DI water and isopropyl alcohol with a small amount of 2-butanol additive. This allows a NiO nanoparticle suspension (s-NiO) to be deposited on a hydrophobic active layer surface. An inverted non-fullerene solar cell based on a blend of p-type polymer PTB7-Th and non-fullerene acceptor IEICO-4F exhibits the high efficiency of 11.23% with an s-NiO HTL, comparable to the efficiency of an inverted solar cell with a MoOx HTL deposited by thermal evaporation. Conventionally structured devices including this s-NiO layer show efficiency comparable to that of a conventional device with a PEDOT:PSS HTL.
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Affiliation(s)
- Hong Nhan Tran
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea
| | - Duc Quang Dao
- School of Chemical Engineering, University of Ulsan, Ulsan, 44610, Republic of Korea
| | - Yung Jin Yoon
- Department of Energy Engineering and School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Yun Seop Shin
- Department of Energy Engineering and School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jin San Choi
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea
| | - Jin Young Kim
- Department of Energy Engineering and School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Shinuk Cho
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea
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Chen Z, Duan H, Gai Y, Xie W, Deng W, Jiang F. Separation of the host-guest system for ferrocene derivatives in octahedral nanocages by electrochemical ionization. Inorganica Chim Acta 2021. [DOI: 10.1016/j.ica.2021.120385] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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36
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Duan H, Chen Z, Xu N, Qiao S, Chen G, Li D, Deng W, Jiang F. Non-stoichiometric NiOx nanocrystals for highly efficient electrocatalytic oxygen evolution reaction. J Electroanal Chem (Lausanne) 2021. [DOI: 10.1016/j.jelechem.2020.114966] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/22/2022]
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Evaluation of Ni-Based Flexible Resistance Temperature Detectors Fabricated by Laser Digital Pattering. NANOMATERIALS 2021; 11:nano11030576. [PMID: 33668966 PMCID: PMC7996589 DOI: 10.3390/nano11030576] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2021] [Revised: 02/19/2021] [Accepted: 02/21/2021] [Indexed: 11/17/2022]
Abstract
Temperature sensors are ubiquitous in every field of engineering application since temperature control is vital in operating, testing and monitoring various equipment systems. Herein, we introduce a facile and rapid laser digital patterning (LDP) process to fabricate low-cost, Ni-based flexible resistance temperature detectors (RTDs). Ni-based RTDs are directly generated on a thin flexible polyimide substrate (thickness: 50 µm) by laser-induced reductive sintering of a solution-processed nonstoichiometric nickel oxide (NiOx) nanoparticle thin film under ambient conditions. The shape of RTDs can be easily adjusted by controlling computer-aided design (CAD) data without using the physical patterning mask while the sensitivity (temperature coefficient of resistance (α) ~ 3.52 × 10−3 °C−1) of the sensors can be maintained regardless of shape and size of the sensor electrodes. The flexible Ni-based RTDs can operate over a wide temperature range up to 200 °C with excellent repeatability. Additionally, the Ni-based RTDs respond quickly to the temperature change and can operate in corrosive environments including water and seawater. Moreover, the Ni-based RTDs show a superior mechanical and electrical stability with a negligible resistance change up to a radius of curvature of 1.75 mm. Finally, a tape-pull test demonstrates the robust adhesion of Ni-based RTDs on the substrate.
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Afzal AM, Bae IG, Aggarwal Y, Park J, Jeong HR, Choi EH, Park B. Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiO x layer. Sci Rep 2021; 11:169. [PMID: 33420313 PMCID: PMC7794468 DOI: 10.1038/s41598-020-80640-3] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2020] [Accepted: 12/02/2020] [Indexed: 01/29/2023] Open
Abstract
Hybrid organic-inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W-1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W-1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of - 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.
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Affiliation(s)
- Amir Muhammad Afzal
- Department of Electrical and Biological Physics, Kwangwoon University, Wolgye-Dong, Seoul, 01897, South Korea
| | - In-Gon Bae
- Department of Electrical and Biological Physics, Kwangwoon University, Wolgye-Dong, Seoul, 01897, South Korea
| | - Yushika Aggarwal
- Department of Electrical and Biological Physics, Kwangwoon University, Wolgye-Dong, Seoul, 01897, South Korea
| | - Jaewoo Park
- Department of Electrical and Biological Physics, Kwangwoon University, Wolgye-Dong, Seoul, 01897, South Korea
| | - Hye-Ryeon Jeong
- Department of Electrical and Biological Physics, Kwangwoon University, Wolgye-Dong, Seoul, 01897, South Korea
| | - Eun Ha Choi
- Department of Electrical and Biological Physics, Kwangwoon University, Wolgye-Dong, Seoul, 01897, South Korea
| | - Byoungchoo Park
- Department of Electrical and Biological Physics, Kwangwoon University, Wolgye-Dong, Seoul, 01897, South Korea.
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Li H, Luo D, Liu L, Xiong D, Peng Y. Improved efficiency and carrier dynamic transportation behavior in perovskite solar cells with CuInS 2 quantum dots as hole-transport materials. Dalton Trans 2021; 50:8837-8844. [PMID: 34100052 DOI: 10.1039/d1dt01036k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Inorganic quantum dot (QD)-based hole-transport materials (HTMs) have proved their potential in perovskite solar cells (PSCs). In this work, CuInS2 quantum dots (CIS QDs) were applied as HTMs for PSCs with the architecture of TiO2/Cs0.17FA0.83Pb(Br0.2I0.8)3/HTM/Au. By optimizing the preparation process, a high-quality perovskite thin film could be obtained. When the speed was 5000 rpm, the speed acceleration was 3000 rpm per s and heat treated at 150 °C, the perovskite film had low surface roughness (15.26 nm) and obvious grain boundary. The photoelectric conversion efficiency (PCE) of PSCs was greatly improved from 2.83% to 12.33% utilizing CIS QDs at an optimal concentration and with surface ligands as HTMs. Surface ligands can control the size and shape of CIS QDs, and thus affect the performance of PSCs. The carrier dynamic transportation behaviour at the CIS/perovskite interface was studied, which showed that CIS QDs as HTMs in PSCs can strongly quench the fluorescence and increase the photobleaching recovery rate. Therefore, CIS QDs are promising inorganic HTMs for the fabrication of PSCs.
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Affiliation(s)
- Hong Li
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, P. R. China.
| | - Donglian Luo
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, P. R. China.
| | - Liwang Liu
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, P. R. China.
| | - Dehua Xiong
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, P. R. China. and State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018, P. R. China
| | - Yong Peng
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, (Wuhan University of Technology), 430070, Wuhan, China.
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40
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Wilson RL, Macdonald TJ, Lin CT, Xu S, Taylor A, Knapp CE, Guldin S, McLachlan MA, Carmalt CJ, Blackman CS. Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′) 2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate). RSC Adv 2021; 11:22199-22205. [PMID: 35480804 PMCID: PMC9034214 DOI: 10.1039/d1ra03263a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/26/2021] [Accepted: 06/15/2021] [Indexed: 11/29/2022] Open
Abstract
Nickel oxide (NiO) has good optical transparency and wide band-gap, and due to the particular alignment of valence and conduction band energies with typical current collector materials has been used in solar cells as an efficient hole transport-electron blocking layer, where it is most commonly deposited via sol–gel or directly deposited as nanoparticles. An attractive alternative approach is via vapour deposition. This paper describes the chemical vapour deposition of p-type nickel oxide (NiO) thin films using the new nickel CVD precursor [Ni(dmamp′)2], which unlike previous examples in literature is synthesised using the readily commercially available dialkylaminoalkoxide ligand dmamp′ (2-dimethylamino-2-methyl-1-propanolate). The use of vapour deposited NiO as a blocking layer in a solar-cell device is presented, including benchmarking of performance and potential routes to improving performance to viable levels. We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.![]()
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Affiliation(s)
| | - Thomas J. Macdonald
- Department of Chemistry
- University College London
- London
- UK
- Department of Chemistry
| | - Chieh-Ting Lin
- Department of Materials
- Center for Plastic Electronics
- Imperial College London
- London
- UK
| | - Shengda Xu
- Department of Materials
- Center for Plastic Electronics
- Imperial College London
- London
- UK
| | - Alaric Taylor
- Department of Chemical Engineering
- University College London
- London
- UK
| | | | - Stefan Guldin
- Department of Chemical Engineering
- University College London
- London
- UK
| | - Martyn A. McLachlan
- Department of Materials
- Center for Plastic Electronics
- Imperial College London
- London
- UK
| | | | - Chris S. Blackman
- Department of Chemistry
- University College London
- London
- UK
- London Centre for Nanotechnology
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41
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Li Y, Mao L, Yu L, Li X, Zhang J. NiO x nanoparticles obtained from hydrothermally treated NiC 2O 4 as an electron blocking layer for organic photodetectors. NANOTECHNOLOGY 2020; 31:505601. [PMID: 33006318 DOI: 10.1088/1361-6528/abb48d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A room-temperature p-type NiOx film synthesized from a NiC2O4 precursor via hydrothermal treatment is employed as an electron blocking layer (EBL) to fabricate organic photodetectors (OPDs). A simple and efficient calcine process at 375 °C in air decomposes the NiC2O4 particles into NiOx, removes organic components and crystal water, and releases CO2 gas. Our experimental results indicate that this gaseous by-product prevents the agglomeration of NiOx, which yields smaller nanoparticles (5-10 nm). The formation of an EBL at room temperature improves device performance. After optimization, the performance parameters obtained, including dark current density, responsivity, specific detectivity and response, are 1.13 × 10-7 A cm-2, 0.74 A W-1, 3.86 × 1012 Jones, and 0.5/8 ms, respectively. Additionally, the dark current is reduced by more than an order of magnitude after the insertion of the NiOx layer. The proposed simple and easy method for producing an EBL could be beneficial for the commercial low-temperature and large-area preparation of OPDs.
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Affiliation(s)
- Yi Li
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, People's Republic of China
| | - Longmei Mao
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, People's Republic of China
| | - Longxin Yu
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, People's Republic of China
| | - Xifeng Li
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, People's Republic of China
| | - Jianhua Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, People's Republic of China
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42
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Ma R, Ren Z, Li C, Wang Y, Huang Z, Zhao Y, Yang T, Liang Y, Sun XW, Choy WCH. Establishing Multifunctional Interface Layer of Perovskite Ligand Modified Lead Sulfide Quantum Dots for Improving the Performance and Stability of Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2002628. [PMID: 32964688 DOI: 10.1002/smll.202002628] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2020] [Revised: 07/24/2020] [Indexed: 06/11/2023]
Abstract
While organic-inorganic halide perovskite solar cells (PSCs) show great potential for realizing low-cost and easily fabricated photovoltaics, the unexpected defects and long-term stability against moisture are the main issues hindering their practical applications. Herein, a strategy is demonstrated to address the main issues by introducing lead sulfide quantum dots (QDs) on the perovskite surface as the multifunctional interface layer on perovskite film through establishing perovskite as the ligand on PbS QDs. Meanwhile, the multifunctions are featured in three aspects including the strong interactions of PbS QDs with perovskites particularly at the grain boundaries favoring good QDs coverage on perovskites for ultimate smooth morphology; an inhibition of iodide ions mobilization by the strong interaction between iodide and the incorporated QDs; and the reduction of the dangling bonds of Pb2+ by the sulfur atoms of PbS QDs. Finally, the device performances are highly improved due to the reduced defects and non-radiative recombination. The results show that both open-circuit voltage and fill factor are significantly improved to the high values of 1.13 V and 80%, respectively in CH3 NH3 PbI3 -based PSCs, offering a high efficiency of 20.64%. The QDs incorporation also enhances PSCs' stability benefitting from the induced hydrophobic surface and suppressed iodide mobilization.
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Affiliation(s)
- Ruiman Ma
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, China
| | - Zhenwei Ren
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, China
| | - Can Li
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, China
| | - Yong Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, China
| | - Zhanfeng Huang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, China
| | - Yong Zhao
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, China
| | - Tingbin Yang
- Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology of China, Shenzhen, 518055, P. R. China
| | - Yongye Liang
- Shenzhen Key Laboratory of Printed Electronics, Department of Materials Science and Engineering, Southern University of Science and Technology of China, Shenzhen, 518055, P. R. China
| | - Xiao Wei Sun
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Wallace C H Choy
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, China
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43
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Li M, Zuo WW, Ricciardulli AG, Yang YG, Liu YH, Wang Q, Wang KL, Li GX, Saliba M, Di Girolamo D, Abate A, Wang ZK. Embedded Nickel-Mesh Transparent Electrodes for Highly Efficient and Mechanically Stable Flexible Perovskite Photovoltaics: Toward a Portable Mobile Energy Source. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2003422. [PMID: 33480464 DOI: 10.1002/adma.202003422] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2020] [Revised: 07/09/2020] [Indexed: 06/12/2023]
Abstract
The rapid development of Internet of Things mobile terminals has accelerated the market's demand for portable mobile power supplies and flexible wearable devices. Here, an embedded metal-mesh transparent conductive electrode (TCE) is prepared on poly(ethylene terephthalate) (PET) using a novel selective electrodeposition process combined with inverted film-processing methods. This embedded nickel (Ni)-mesh flexible TCE shows excellent photoelectric performance (sheet resistance of ≈0.2-0.5 Ω sq-1 at high transmittance of ≈85-87%) and mechanical durability. The PET/Ni-mesh/polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS PH1000) hybrid electrode is used as a transparent electrode for perovskite solar cells (PSCs), which exhibit excellent electric properties and remarkable environmental and mechanical stability. A power conversion efficiency of 17.3% is obtained, which is the highest efficiency for a PSC based on flexible transparent metal electrodes to date. For perovskite crystals that require harsh growth conditions, their mechanical stability and environmental stability on flexible transparent embedded metal substrates are studied and improved. The resulting flexible device retains 76% of the original efficiency after 2000 bending cycles. The results of this work provide a step improvement in flexible PSCs.
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Affiliation(s)
- Meng Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
- Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstraße 5, Berlin, 12489, Germany
- Laboratory of Advanced Optoelectronic Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Wei-Wei Zuo
- Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstraße 5, Berlin, 12489, Germany
- Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, Darmstadt, 64287, Germany
| | - Antonio Gaetano Ricciardulli
- Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, Darmstadt, 64287, Germany
| | - Ying-Guo Yang
- Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai, 201204, P. R. China
| | - Yan-Hua Liu
- School of Optoelectronic Science and Engineering, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215123, China
| | - Qiong Wang
- Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstraße 5, Berlin, 12489, Germany
| | - Kai-Li Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Gui-Xiang Li
- Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstraße 5, Berlin, 12489, Germany
| | - Michael Saliba
- Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, Darmstadt, 64287, Germany
- Helmholtz Young Investigator Group, lEK5-Photovoltaik, Forschungszentrum Jülich, Jülich, 52425, Germany
| | - Diego Di Girolamo
- Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstraße 5, Berlin, 12489, Germany
- Department of Chemical, Materials and Production Engineering, University of Naples Federico II, Piazzale Tecchio 80, Fuorigrotta, Naples, 80125, Italy
| | - Antonio Abate
- Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstraße 5, Berlin, 12489, Germany
- Department of Chemical, Materials and Production Engineering, University of Naples Federico II, Piazzale Tecchio 80, Fuorigrotta, Naples, 80125, Italy
| | - Zhao-Kui Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
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44
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Cai L, Yang F, Xu Y, Fan J, Li Y, Zhao Y, Liang D, Zou Y, Li P, Wang L, Wang C, Li Y, Fan J, Sun B. Dual Functionalization of Electron Transport Layer via Tailoring Molecular Structure for High-Performance Perovskite Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2020; 12:37346-37353. [PMID: 32689788 DOI: 10.1021/acsami.0c09642] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Great progress in modification and optimization of emission layer (EML) in perovskite light-emitting diodes (PeLEDs) results in a significant improvement in device efficiency. However, so far, less attention has been paid to the exploration of hole/electron injection and transporting layers to maximize the utilization of charge carriers for efficient and stable PeLEDs. At present, low electron mobility of electron transport layer (ETL) causes an unbalanced charge injection, and the defects at the ETL/perovskite interface limit the formation and utilization of generated excitons. Here, a series of compounds (BPBiTP, BPBiPN, and BPBiPA) flanked by diphenyl-1H-benzo[d]imidazole end groups have been developed as ETL materials, where the bridging units (benzene, naphthalene, anthracene) are manipulated to achieve dual functionality, namely, the high charge carrier mobility and effective passivation of perovskite surface. The coordinating end groups effectively reduce the trap state at the interface of ETL and EML due to their strong nucleophilic quality. H-aggregation of anthracene units and large transfer integral in BPBiPA lead to its superior electron mobility of 8.4 × 10-4 cm2 V-1 s-1 in the solid state, over 1 order of magnitude higher than that of the typical one (TPBi). Consequently, green PeLEDs with a maximum external quantum efficiency (EQE) of 19.7%, reduced efficiency roll-off, as well as extended operational lifetime have been achieved without any outcoupling technique. Our result demonstrated that optimization of ETL materials via improving both passivation capability and electron mobility is a powerful strategy for producing high-performance PeLEDs.
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Affiliation(s)
- Lei Cai
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Fei Yang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Yafeng Xu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Jianzhong Fan
- Shandong Province Key Laboratory of Medical Physics and Image Processing Technology, Institute of Materials and Clean Energy, School of Physics and Electronics, Shandong Normal University, 250014 Jinan, China
| | - Ya Li
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Yue Zhao
- Coordination Chemistry Institute, State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210023, China
| | - Dong Liang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Yatao Zou
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Pandeng Li
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Lu Wang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Chuankui Wang
- Shandong Province Key Laboratory of Medical Physics and Image Processing Technology, Institute of Materials and Clean Energy, School of Physics and Electronics, Shandong Normal University, 250014 Jinan, China
| | - Youyong Li
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Jian Fan
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Baoquan Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
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45
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Hu X, Liu C, Zhang Z, Jiang X, Garcia J, Sheehan C, Shui L, Priya S, Zhou G, Zhang S, Wang K. 22% Efficiency Inverted Perovskite Photovoltaic Cell Using Cation-Doped Brookite TiO 2 Top Buffer. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001285. [PMID: 32832371 PMCID: PMC7435259 DOI: 10.1002/advs.202001285] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2020] [Revised: 05/28/2020] [Indexed: 05/11/2023]
Abstract
Simultaneously achieving high efficiency and high durability in perovskite solar cells is a critical step toward the commercialization of this technology. Inverted perovskite photovoltaic (IP-PV) cells incorporating robust and low levelized-cost-of-energy (LCOE) buffer layers are supposed to be a promising solution to this target. However, insufficient inventory of materials for back-electrode buffers substantially limits the development of IP-PV. Herein, a composite consisting of 1D cation-doped TiO2 brookite nanorod (NR) embedded by 0D fullerene is investigated as a top modification buffer for IP-PV. The cathode buffer is constructed by introducing fullerene to fill the interstitial space of the TiO2 NR matrix. Meanwhile, cations of transition metal Co or Fe are doped into the TiO2 NR to further tune the electronic property. Such a top buffer exhibits multifold advantages, including improved film uniformity, enhanced electron extraction and transfer ability, better energy level matching with perovskite, and stronger moisture resistance. Correspondingly, the resultant IP-PV displays an efficiency exceeding 22% with a 22-fold prolonged working lifetime. The strategy not only provides an essential addition to the material inventory for top electron buffers by introducing the 0D:1D composite concept, but also opens a new avenue to optimize perovskite PVs with desirable properties.
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Affiliation(s)
- Xiaowen Hu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper DisplaysSouth China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
- SCNU‐TUE Joint Lab of Device Integrated Responsive Materials (DIRM)National Center for International Research on Green OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Chang Liu
- Department of ChemistryUniversity of VirginiaCharlottesvilleVA22904USA
| | - Zhiyong Zhang
- Department of ChemistryUniversity of VirginiaCharlottesvilleVA22904USA
| | - Xiao‐Fang Jiang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper DisplaysSouth China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Juan Garcia
- Department of ChemistryUniversity of VirginiaCharlottesvilleVA22904USA
| | - Colton Sheehan
- Department of ChemistryUniversity of VirginiaCharlottesvilleVA22904USA
| | - Lingling Shui
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper DisplaysSouth China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Shashank Priya
- Material Research InstitutePennsylvania State UniversityUniversity ParkPA16802USA
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper DisplaysSouth China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China
- SCNU‐TUE Joint Lab of Device Integrated Responsive Materials (DIRM)National Center for International Research on Green OptoelectronicsSouth China Normal UniversityGuangzhou510006China
| | - Sen Zhang
- Department of ChemistryUniversity of VirginiaCharlottesvilleVA22904USA
| | - Kai Wang
- Material Research InstitutePennsylvania State UniversityUniversity ParkPA16802USA
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Li P, Wu Z, Hu H, Zhang Y, Xiao T, Lu X, Ren Z, Li G, Wu Z, Hao J, Zhang HL, Zheng Z. Efficient Flexible Perovskite Solar Cells Using Low-Cost Cu Top and Bottom Electrodes. ACS APPLIED MATERIALS & INTERFACES 2020; 12:26050-26059. [PMID: 32419442 DOI: 10.1021/acsami.0c06461] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Perovskite solar cells (PSCs) are promising technology for flexible photovoltaic applications because of the low cost and good flexibility of the halide perovskite materials. Nevertheless, the use of transparent conductive oxides (TCOs) and noble metals (e.g., Au and Ag) as PSC electrodes is very costly, and TCOs are too brittle for flexible applications. How to fabricate flexible PSCs (FPSCs) with cost-effective and soft electrode materials remains to be a big challenge. Herein, we report the first study of FPSCs using low-cost Cu electrodes. Both the transparent bottom electrode and the opaque top electrode are fabricated with Cu. FPSCs made with such Cu electrodes acquire a champion efficiency of 13.58% (Jsc of 17.79 mA cm-2, Voc of 1.031 V, and FF of 74.07%), which retains over 90% after 1000 cycles of bending at a small radius of curvature of 5 mm. The device shows negligible changes in Voc and FF after storage for 10 weeks without encapsulation.
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Affiliation(s)
- Peng Li
- Laboratory for Advanced Interfacial Materials and Devices, Research Centre for Smart Wearable Technology, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
| | - Zhongwei Wu
- Laboratory for Advanced Interfacial Materials and Devices, Research Centre for Smart Wearable Technology, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
| | - Hong Hu
- Laboratory for Advanced Interfacial Materials and Devices, Research Centre for Smart Wearable Technology, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
| | - Yaokang Zhang
- Laboratory for Advanced Interfacial Materials and Devices, Research Centre for Smart Wearable Technology, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
| | - Ting Xiao
- Laboratory for Advanced Interfacial Materials and Devices, Research Centre for Smart Wearable Technology, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
| | - Xi Lu
- Laboratory for Advanced Interfacial Materials and Devices, Research Centre for Smart Wearable Technology, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
| | - Zhiwei Ren
- Advanced Materials & Electronics Lab, Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
| | - Gang Li
- Advanced Materials & Electronics Lab, Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
| | - Zehan Wu
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
| | - Hao-Li Zhang
- State Key Laboratory of Applied Organic Chemistry, College of Chemistry & Chemical Engineering, Lanzhou University, Lanzhou 730000 P.R. China
| | - Zijian Zheng
- Laboratory for Advanced Interfacial Materials and Devices, Research Centre for Smart Wearable Technology, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
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47
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Marand ZR, Kermanpur A, Karimzadeh F, Barea EM, Hassanabadi E, Anaraki EH, Julián-López B, Masi S, Mora-Seró I. Structural and Electrical Investigation of Cobalt-Doped NiO x/Perovskite Interface for Efficient Inverted Solar Cells. NANOMATERIALS 2020; 10:nano10050872. [PMID: 32365967 PMCID: PMC7279223 DOI: 10.3390/nano10050872] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2020] [Revised: 04/07/2020] [Accepted: 04/15/2020] [Indexed: 11/17/2022]
Abstract
Inorganic hole-transporting materials (HTMs) for stable and cheap inverted perovskite-based solar cells are highly desired. In this context, NiOx, with low synthesis temperature, has been employed. However, the low conductivity and the large number of defects limit the boost of the efficiency. An approach to improve the conductivity is metal doping. In this work, we have synthesized cobalt-doped NiOx nanoparticles containing 0.75, 1, 1.25, 2.5, and 5 mol% cobalt (Co) ions to be used for the inverted planar perovskite solar cells. The best efficiency of the devices utilizing the low temperature-deposited Co-doped NiOx HTM obtained a champion photoconversion efficiency of 16.42%, with 0.75 mol% of doping. Interestingly, we demonstrated that the improvement is not from an increase of the conductivity of the NiOx film, but due to the improvement of the perovskite layer morphology. We observe that the Co-doping raises the interfacial recombination of the device but more importantly improves the perovskite morphology, enlarging grain size and reducing the density of bulk defects and the bulk recombination. In the case of 0.75 mol% of doping, the beneficial effects do not just compensate for the deleterious one but increase performance further. Therefore, 0.75 mol% Co doping results in a significant improvement in the performance of NiOx-based inverted planar perovskite solar cells, and represents a good compromise to synthesize, and deposit, the inorganic material at low temperature, without losing the performance, due to the strong impact on the structural properties of the perovskite. This work highlights the importance of the interface from two different points of view, electrical and structural, recognizing the role of a low doping Co concentration, as a key to improve the inverted perovskite-based solar cells’ performance.
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Affiliation(s)
- Zahra Rezay Marand
- Institute of Advanced Materials (INAM), Universitat Jaume I, Av. Sos Baynat, s/n, 12071 Castelló, Spain; (Z.R.M.); (E.M.B.); (E.H.); (B.J.-L.)
- Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111, Iran; (A.K.); (F.K.); (E.H.A.)
| | - Ahmad Kermanpur
- Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111, Iran; (A.K.); (F.K.); (E.H.A.)
| | - Fathallah Karimzadeh
- Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111, Iran; (A.K.); (F.K.); (E.H.A.)
| | - Eva M. Barea
- Institute of Advanced Materials (INAM), Universitat Jaume I, Av. Sos Baynat, s/n, 12071 Castelló, Spain; (Z.R.M.); (E.M.B.); (E.H.); (B.J.-L.)
| | - Ehsan Hassanabadi
- Institute of Advanced Materials (INAM), Universitat Jaume I, Av. Sos Baynat, s/n, 12071 Castelló, Spain; (Z.R.M.); (E.M.B.); (E.H.); (B.J.-L.)
- Textile Engineering Department, Textile Excellence & Research Centers, Amirkabir University of Technology, Tehran 15916-34311, Iran
| | - Elham Halvani Anaraki
- Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111, Iran; (A.K.); (F.K.); (E.H.A.)
| | - Beatriz Julián-López
- Institute of Advanced Materials (INAM), Universitat Jaume I, Av. Sos Baynat, s/n, 12071 Castelló, Spain; (Z.R.M.); (E.M.B.); (E.H.); (B.J.-L.)
| | - Sofia Masi
- Institute of Advanced Materials (INAM), Universitat Jaume I, Av. Sos Baynat, s/n, 12071 Castelló, Spain; (Z.R.M.); (E.M.B.); (E.H.); (B.J.-L.)
- Correspondence: (S.M.); (I.M.-S.)
| | - Iván Mora-Seró
- Institute of Advanced Materials (INAM), Universitat Jaume I, Av. Sos Baynat, s/n, 12071 Castelló, Spain; (Z.R.M.); (E.M.B.); (E.H.); (B.J.-L.)
- Correspondence: (S.M.); (I.M.-S.)
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48
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Hanif Z, Siddiqui MF, Park SJ. Hierarchical growth of nickel oxyhydroxide on bacterial cellulose hydrogel: role of water channels in hydrogel to form hierarchical structure. ASIA-PAC J CHEM ENG 2020. [DOI: 10.1002/apj.2415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Zahid Hanif
- School of Mechanical EngineeringKorea University of Technology and Education (KOREATECH) Cheonan Republic of Korea
- Advanced Technology Research CenterKorea University of Technology and Education (KOREATECH) Cheonan Republic of Korea
| | - Mohd Farhan Siddiqui
- School of Mechanical EngineeringKorea University of Technology and Education (KOREATECH) Cheonan Republic of Korea
| | - Sung Jea Park
- School of Mechanical EngineeringKorea University of Technology and Education (KOREATECH) Cheonan Republic of Korea
- Advanced Technology Research CenterKorea University of Technology and Education (KOREATECH) Cheonan Republic of Korea
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49
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Wu WQ, Rudd PN, Ni Z, Van Brackle CH, Wei H, Wang Q, Ecker BR, Gao Y, Huang J. Reducing Surface Halide Deficiency for Efficient and Stable Iodide-Based Perovskite Solar Cells. J Am Chem Soc 2020; 142:3989-3996. [DOI: 10.1021/jacs.9b13418] [Citation(s) in RCA: 157] [Impact Index Per Article: 39.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Affiliation(s)
- Wu-Qiang Wu
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, North Carolina 27599, United States
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, QLD 4072, Australia
| | - Peter N. Rudd
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, North Carolina 27599, United States
| | - Zhenyi Ni
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, North Carolina 27599, United States
| | - Charles Henry Van Brackle
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, North Carolina 27599, United States
| | - Haotong Wei
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, North Carolina 27599, United States
| | - Qi Wang
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, North Carolina 27599, United States
| | - Benjamin R. Ecker
- Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Yongli Gao
- Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Jinsong Huang
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, North Carolina 27599, United States
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50
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Ramachandran H, Jahanara MM, Nair NM, Swaminathan P. Metal oxide heterojunctions using a printable nickel oxide ink. RSC Adv 2020; 10:3951-3959. [PMID: 35492677 PMCID: PMC9048838 DOI: 10.1039/c9ra08466e] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2019] [Accepted: 01/11/2020] [Indexed: 11/23/2022] Open
Abstract
Wide band gap metal oxides are ideally suited for inorganic optoelectronic devices. While zinc oxide is a commonly used n-type material, there is still a lot of ongoing work for finding suitable p-type oxides. In this work, we describe a two-step route to formulate a stable and conducting p-type nickel oxide (NiO) nanofluid. NiO nanoparticles were synthesised using a bottom-up wet chemical approach and dispersed in ethylene glycol to form a nanofluid. The viscosity and surface tension of the nanofluid were optimised for printing. The printing was done using an extrusion-based direct writer. The NiO nanofluid was printed onto an aluminum-doped zinc oxide layer and annealed at different temperatures. Electrical characterisation of the junction was used to extract the junction barrier for carriers across the interface. The resulting heterojunction was found to exhibit rectifying behaviour, with the highest rectification ratio occurring at an annealing temperature of 250 °C. This annealing temperature also resulted in the lowest junction barrier height, and was in excellent agreement with theoretically predicted values. The development of a printed p-type ink will help in the realisation of oxide-based printed electronic devices.
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Affiliation(s)
- Hari Ramachandran
- Electronic Materials and Thin Films Lab, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras Chennai 600036 India
| | - Mohammad Mahaboob Jahanara
- Electronic Materials and Thin Films Lab, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras Chennai 600036 India
| | - Nitheesh M Nair
- Electronic Materials and Thin Films Lab, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras Chennai 600036 India
- Organic Electronics Group, Department of Electrical Engineering, Indian Institute of Technology Madras Chennai 600036 India
| | - P Swaminathan
- Electronic Materials and Thin Films Lab, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras Chennai 600036 India
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