An Ultrabroadband Mid-Infrared Pulsed Optical Switch Employing Solution-Processed Bismuth Oxyselenide

Tailoring Broadband Nonlinear Optical Characteristics and Ultrafast Photocarrier Dynamics of Bi2O2S Nanosheets by Defect Engineering

Low-dimensional bismuth oxychalcogenides have shown promising potential in optoelectronics due to their high stability, photoresponse, and carrier mobility. However, the relevant studies on deep understanding for Bi2O2S is quite limited. Here, comprehensive experimental and computational investigations are conducted in the regulated band structure, nonlinear optical (NLO) characteristics, and carrier dynamics of Bi2O2S nanosheets via defect engineering, taking O vacancy (OV) and substitutional Se doping as examples. As the OV continuously increased to ≈35%, the optical bandgaps progressively narrow from ≈1.21 to ≈0.81 eV and NLO wavelengths are extended to near-infrared regions with enhanced saturable absorption. Simultaneously, the relaxation processes are effectively accelerated from tens of picoseconds to several picoseconds, as the generated defect energy levels can serve as both additional absorption cross-sections and fast relaxation channels supported by theoretical calculations. Furthermore, substitutional Se doping in Bi2O2S nanosheets also modulate their optical properties with the similar trends. As a proof-of-concept, passively mode-locked pulsed lasers in the ≈1.0 µm based on the defect-rich samples (≈35% OV and ≈50% Se-doping) exhibit excellent performance. This work deepens the insight of defect functions on optical properties of Bi2O2S nanosheets and provides new avenues for designing advanced photonic devices based on low-dimensional bismuth oxychalcogenides.

Review on synthetic approaches and PEC activity performance of bismuth binary and mixed-anion compounds for potential applications in marine engineering

Photoelectrochemical (PEC) technology in marine engineering holds significant importance due to its potential to address various challenges in the marine environment. Currently, PEC-type applications in marine engineering offer numerous benefits, including sustainable energy generation, water desalination and treatment, photodetection, and communication. Finding novel efficient photoresponse semiconductors is of great significance for the development of PEC-type techniques in the marine space. Bismuth-based semiconductor materials possess suitable and tunable bandgap structures, high carrier mobility, low toxicity, and strong oxidation capacity, which gives them great potential for PEC-type applications in marine engineering. In this paper, the structure and properties of bismuth binary and mixed-anion semiconductors have been reviewed. Meanwhile, the recent progress and synthetic approaches were discussed from the point of view of the application prospects. Finally, the issues and challenges of bismuth binary and mixed-anion semiconductors in PEC-type photodetection and hydrogen generation are analyzed. Thus, this perspective will not only stimulate the further investigation and application of bismuth binary and mixed-anion semiconductors in marine engineering but also help related practitioners understand the recent progress and potential applications of bismuth binary and mixed-anion compounds.

A hidden phase uncovered by ultrafast carrier dynamics in thin Bi2O2Se

Bi2O2Se has attracted intensive attention due to its potential in electronics, optoelectronics, and ferroelectric applications. Despite that, there have only been a handful of experimental studies based on ultrafast spectroscopy to elucidate the carrier dynamics in Bi2O2Se thin films. Besides, different groups have reported various ultrafast timescales and associated mechanisms across films of different thicknesses. A comprehensive understanding in relation to thickness and fluence is still lacking. In this work, we have systematically explored the thickness-dependent Raman spectroscopy and ultrafast carrier dynamics in chemical vapor deposition (CVD)-grown Bi2O2Se thin films on a mica substrate with thicknesses varying from 22.44 nm down to 4.62 nm in both low and high pump fluence regions. Combining the thickness dependence and fluence dependence of the slow decay time, we demonstrate a hidden photoinduced ferroelectric transition in the thinner (<8 nm) Bi2O2Se films below the material damage thresholds, influenced by substrate-induced compressive strain and far-from-equilibrium excitation. Moreover, this transition can be manifested at high electronic excitation densities. Our results deepen the understanding of the interplay between the ferroelectric phase and semiconducting characteristics of Bi2O2Se thin films, offering potential applications in optoelectronic devices that benefit from the ferroelectric transition.

Insights into electron dynamics in two-dimensional bismuth oxyselenide: a monolayer-bilayer perspective

Bismuth oxyselenide (Bi2O2Se), an emerging 2D semiconductor material, has garnered substantial attention owing to its remarkable properties, including air stability, elevated carrier mobility, and ultrafast optical response. In this study, we conduct a comparative analysis of electron excitation and relaxation processes in monolayer and bilayer Bi2O2Se. Our findings reveal that monolayer Bi2O2Se exhibits parity-forbidden transitions between the band edges at the Γ point, whereas bilayer Bi2O2Se demonstrates parity activity, providing the bilayer with an advantage in light absorption. Employing nonadiabatic molecular dynamics simulations, we uncover a two-stage hot-electron relaxation process-initially fast followed by slow-in both monolayer and bilayer Bi2O2Se within the conduction band. Despite the presence of weak nonadiabatic coupling between the CBM + 1 and CBM, limiting hot electron relaxation, the monolayer displays a shorter relaxation time due to its higher phonon-coupled frequency and smaller energy difference. Our investigation sheds light on the layer-specific excitation properties of 2D Bi2O2Se layered materials, providing crucial insights for the strategic design of photonic devices utilizing 2D materials.

Fabrication of Two-Dimensional Homo-Bimetallic Porphyrin Framework Thin Films for Optimizing Nonlinear Optical Limiting

Developing efficient metal-organic framework (MOF) optical devices with tunable third-order nonlinear optical (NLO) properties is an important challenge for scientific research and practical application. Herein, 2D monometallic and hetero/homo-bimetallic porphyrin MOF thin films (ZnTCPP(M) M = H2, Fe, Zn) were fabricated using the liquid-phase epitaxial (LPE) layer-by-layer (LBL) method to investigate the metal substitution dependent third-order NLO behavior. The prepared homo-bimetallic ZnTCPP(Zn) thin film exhibited enhanced third-order NLO performance with a higher third-order nonlinear susceptibility of ∼4.21 × 10-7 esu compared to monometallic and hetero-bimetallic counterparts. Additionally, theoretical calculations were performed to complement the experimental findings and revealed that the enhanced NLO effect of the ZnTCPP(Zn) thin film is mainly attributed to the enhanced local excitation. These findings not only provide a comprehensive understanding of the relationship between metal types and the NLO behavior of porphyrin MOF thin films but also offer valuable insights into the design and optimization of NLO devices.

Ultrahigh responsivity of non-van der Waals Bi2O2Se photodetector

Bismuth oxyselenide has recently gained tremendous attention as a promising 2D material for next-generation electronic and optoelectronic devices due to its ultrahigh mobility, moderate bandgap, exceptional environmental stability, and presence of high-dielectric constant native oxide. In this study, we have synthesized single-crystalline nanosheets of Bismuth oxyselenide with thicknesses measuring below ten nanometers on Fluorophlogopite mica using an atmospheric pressure chemical vapor deposition system. We transferred as-grown samples to different substrates using a non-corrosive nail polish-assisted dry transfer method. Back-gated Bi2O2Se field effect transistors showed decent field effect mobility of 100 cm2V-1s-1. The optoelectronic property study revealed an ultrahigh responsivity of 1.16 × 106A W-1and a specific detectivity of 2.55 × 1013Jones. The samples also exhibited broadband photoresponse and gate-tunable photoresponse time. These results suggest that Bi2O2Se is an excellent candidate for future high-performance optoelectronic device applications.

Converting commercial Bi2O3 particles into Bi2O2Se@Bi4O8Se nanosheets for "rocking chair" zinc-ion batteries

The development of a low-cost, high-capacity, and insertion-type anode is key for promoting "rocking chair" zinc-ion batteries. Herein, commercial Bi2O3 (BiO) particles are transformed into Bi2O2Se@Bi4O8Se (BiOSe) nanosheets through a simple selenylation process. The change in morphology from commercial BiO particle to BiOSe nanosheet leads to an increased specific surface area of the material. The enhanced electronic/ionic conductivity results in its excellent electrochemical kinetics. Ex situ XRD and XPS tests prove the intercalation-type mechanism of BiO and BiOSe as well as the superior electrochemical reversibility of BiOSe compared to BiO. Furthermore, the H+/Zn2+ co-insertion mechanism of BiOSe is revealed. This makes BiOSe to have low discharge plateaus of 0.38/0.68 V, a high reversible capacity of 182 mA h g-1 at 0.1 A g-1, and a long cyclic life of 500 cycles at 1 A g-1. Besides, the BiOSe//MnO2 "rocking chair" zinc-ion battery offers a high capacity of ≈90 mA h g-1 at 0.2 A g-1. This work provides a reference for turning commercial material into high-performance anode for "rocking chair" zinc-ion batteries.

Charge Transfer Modulation in Vanadium-Doped WS2 /Bi2 O2 Se Heterostructures

The field of photovoltaics is revolutionized in recent years by the development of two-dimensional (2D) type-II heterostructures. These heterostructures are made up of two different materials with different electronic properties, which allows for the capture of a broader spectrum of solar energy than traditional photovoltaic devices. In this study, the potential of vanadium (V)-doped WS2 is investigated, hereafter labeled V-WS2 , in combination with air-stable Bi2 O2 Se for use in high-performance photovoltaic devices. Various techniques are used to confirm the charge transfer of these heterostructures, including photoluminescence (PL) and Raman spectroscopy, along with Kelvin probe force microscopy (KPFM). The results show that the PL is quenched by 40%, 95%, and 97% for WS2 /Bi2 O2 Se, 0.4 at.% V-WS2 /Bi2 O2 Se, and 2 at.% V-WS2 /Bi2 O2 Se, respectively, indicating a superior charge transfer in V-WS2 /Bi2 O2 Se compared to pristine WS2 /Bi2 O2 Se. The exciton binding energies for WS2 /Bi2 O2 Se, 0.4 at.% V-WS2 /Bi2 O2 Se and 2 at.% V-WS2 /Bi2 O2 Se heterostructures are estimated to be ≈130, 100, and 80 meV, respectively, which is much lower than that for monolayer WS2 . These findings confirm that by incorporating V-doped WS2 , charge transfer in WS2 /Bi2 O2 Se heterostructures can be tuned, providing a novel light-harvesting technique for the development of the next generation of photovoltaic devices based on V-doped transition metal dichalcogenides (TMDCs)/Bi2 O2 Se.

Defect-Dependent Nonlinear Absorption in the Lead-Free Double-Perovskite Cs2AgBiBr6

Lead-free perovskites have attracted increasing attention because they can address the toxicity and instability problems inherent to lead-halide perovskites. Furthermore, the nonlinear optical (NLO) properties of lead-free perovskites are rarely explored. Herein, we report significant NLO responses and defect-dependent NLO behavior of Cs₂AgBiBr₆. Specifically, a thin film of pristine Cs₂AgBiBr₆ exhibits strong reverse saturable absorption (RSA), while a film of Cs₂AgBiBr₆ with defects (denoted as Cs₂AgBiBr₆(D)) shows saturable absorption (SA). The nonlinear absorption coefficients are ca. 4.0 × 10⁴ cm GW^-1 (515 nm laser excitation) and 2.6 × 10⁴ cm GW^-1 (800 nm laser excitation) for Cs₂AgBiBr₆ and -2.0 × 10⁴ cm GW^-1 (515 nm laser excitation) and -7.1 × 10³ cm GW^-1 (800 nm laser excitation) for Cs₂AgBiBr₆(D). The optical limiting threshold of Cs₂AgBiBr₆ is 8.1 × 10^-4 J cm^-2 (515 nm laser excitation). The samples show excellent long-term performance stability in air. The RSA of pristine Cs₂AgBiBr₆ correlates with excited-state absorption (515 nm laser excitation) and excited-state absorption following two-photon absorption (800 nm laser excitation), while the defects in Cs₂AgBiBr₆(D) strengthen the ground-state depletion and Pauli blocking, resulting in SA.

Salt-Assisted Low-Temperature Growth of 2D Bi2 O2 Se with Controlled Thickness for Electronics

Bi₂ O₂ Se is the most promising 2D material due to its semiconducting feature and high mobility, making it propitious channel material for high-performance electronics that demands highly crystalline Bi₂ O₂ Se at low-growth temperature. Here, a low-temperature salt-assisted chemical vapor deposition approach for growing single-domain Bi₂ O₂ Se on a millimeter scale with thicknesses of multilayer to monolayer is presented. Because of the advantage of thickness-dependent growth, systematical scrutiny of layer-dependent Raman spectroscopy of Bi₂ O₂ Se from monolayer to bulk is investigated, revealing a redshift of the A_1g mode at 162.4 cm^-1 . Moreover, the long-term environmental stability of ≈2.4 nm thick Bi₂ O₂ Se is confirmed after exposing the sample for 1.5 years to air. The backgated field effect transistor (FET) based on a few-layered Bi₂ O₂ Se flake represents decent carrier mobility (≈287 cm²  V^-1 s^-1 ) and an ON/OFF ratio of up to 10⁷ . This report indicates a technique to grow large-domain thickness controlled Bi₂ O₂ Se single crystals for electronics.

Self-Powered and Broadband Bismuth Oxyselenide/p-Silicon Heterojunction Photodetectors with Low Dark Current and Fast Response

Inorganic nanomaterials such as graphene, black phosphorus, and transition metal dichalcogenides have attracted great interest in developing optoelectronic devices due to their efficient conversion between light and electric signals. However, the zero band gap nature, the unstable chemical properties, and the low electron mobility constrained their wide applications. Bismuth oxyselenide (Bi₂O₂Se) is gradually showing great research significance in the optoelectronic field. Here, we develop a bismuth oxyselenide/p-silicon (Bi₂O₂Se/p-Si) heterojunction and design a self-powered and broadband Bi₂O₂Se/p-Si heterojunction photodetector with an ultrafast response (2.6 μs) and low dark current (10^-10 A without gate voltage regulation). It possesses a remarkable detectivity of 4.43 × 10¹² cm Hz^1/2 W^-1 and a self-powered photoresponse characteristic at 365-1550 nm (ultraviolet-near-infrared). Meanwhile, the Bi₂O₂Se/p-Si heterojunction photodetector also shows high stability and repeatability. It is expected that the proposed Bi₂O₂Se/p-Si heterojunction photodetector will expand the applications of Bi₂O₂Se in practical integrated circuits in the field of material science, energy development, optical imaging, biomedicine, and other applications.

Biosafe Bi2O2Se ultrathin nanosheet for water disinfection via solar-induced photothermal synergistic effect

Solar-induced sterilization via photothermal synergy has attracted enormous attention due to its zero-energy consumption and the elimination of hazardous chemical disinfectant. Herein, we successfully synthesized a super biosafety Bi₂O₂Se with crossed nanosheet structure (Bi₂O₂Se-CN) for the sterilization of Escherichia coli (E. coli) via solar-induced photothermal synergistic effect. In comparison to bulk Bi₂O₂Se, the lower light reflection and more efficient photogenerated charge carrier separation under visible-infrared light irradiation resulted in the excellent sterilization effect of Bi₂O₂Se-CN, with a sterilization efficiency of 99.9% under the synergistic effect of light and heat. The crossed ultrathin nanosheet structure and suitable band gap width of Bi₂O₂Se-CN are fundamental reasons for its enhanced light absorption and charge carrier separation efficiency. Mechanistic studies showed that Bi₂O₂Se-CN can completely inactivate bacteria via generating a large amount of reactive oxygen species (•O₂^-, •OH, and ¹O₂) to attack the cell membrane, which further resulted in the reduced activity of intracellular enzymes and the leakage of intracellular contents. The biosafety property of Bi₂O₂Se-CN was confirmed by in vivo toxicological evaluation on the mice model. This work provided new ideas for the design of more efficient, energy-saving, biocompatible and environmental friendly solar water purification projects.

Excimer Formation in the Non-Van-Der-Waals 2D Semiconductor Bi2 O2 Se

The layered semiconductor Bi₂ O₂ Se is a promising new-type 2D material that holds layered structure via electrostatic forces instead of van der Waals (vdW) attractions. Aside from the huge success in device performance, the non-vdW nature in Bi₂ O₂ Se with a built-in interlayer electric field has also provided an appealing platform for investigating unique photoexcited carrier dynamics. Here, experimental evidence for the observation of excimers in multilayer Bi₂ O₂ Se nanosheets via transient absorption spectroscopy is presented. It is found that the excimer formation is the primary decay pathway of photoexcited excitons and three-stage excimer dynamics with corresponding time scales are established. Excitation-fluence-dependent excimer dynamics further suggest that the excimer is diffusive and its formation can be simply described as excitons relaxed to an excimer geometry. This work indicates the outstanding promise of unique excitonic processes in Bi₂ O₂ Se, which may motivate novel device designs.

Dual-controlled tunable dual-band and ultra-broadband coherent perfect absorber in the THz range

This paper proposes a vanadium dioxide metamaterial-based tunable, polarization-independent coherent perfect absorber (CPA) in the terahertz frequency range. The designed CPA demonstrates intelligent reconfigurable switch modulation from an ultra-broadband absorber mode to a dual-band absorber mode via the thermally controlled of VO₂. The mode of ultra-broadband absorber is realized when the conductivity of VO₂ reaches 11850 S/m via controlling its temperature around T = 328 K. In this mode, the CPA demonstrates more than 90% absorption efficiency within the ultra-wide frequency band that extends from 0.1 THz to 10.8 THz. As the conductivity of VO₂ reaches 2×10⁵ S/m (T = 340 K), the CPA switches to a dual-band absorber mode where a relatively high absorption efficiency of 98% and 99.7% is detected at frequencies of 4.5 THz and 9.8 THz, respectively. Additionally, using phase modulation of the incident light, the proposed CPA can regulate the absorption efficiency, which can be intelligently controlled from perfect absorption to high pass-through transmission. Owing to the ability of the proposed CPA to intelligently control the performance of light, this study can contribute towards enhancing the performance of stealth devices, all-optical switches and coherent photodetectors.

Construction of Bi2O2Se/Bi2Se3 Van Der Waals Heterostructures for Self-Powered and Broadband Photodetectors

Due to its superior carrier mobility and high air stability, the emerging two-dimensional (2D) layered bismuth oxyselenide (Bi₂O₂Se) nanosheets have attracted extensive attention, showing great potential for applications in the electronic and optoelectronic fields. However, a high mobility easily leads to a high dark current, seriously restricting optoelectronic applications, especially in the field of photodetectors. In this paper, we report a high-quality Van der Waals (vdWs) Bi₂O₂Se/Bi₂Se₃ heterostructure on a fluorophlogopite substrate, exhibiting excellent photodiode characteristics. By means of the effective separation of photogenerated electrons and holes by a junction barrier at the interface, the current on/off ratio is up to about 3 × 10³ under 532 nm laser illumination with zero bias. In addition, the photodetector not only achieves a fast response speed of 41 ms but also has a broadband photoresponse from 532 to 1450 nm (visible-NIR). Additionally, the responsivity can reach 0.29 A/W, and the external quantum efficiency exceeds 69% when the device operates in the reverse bias condition. The results indicate that the Bi₂O₂Se/Bi₂Se₃ vdWs heterostructure has great potential for self-powered, broadband, and fast photodetection applications.

Broadband Nonlinear Optical Absorption Induced by Bandgap Renormalization in CVD-Grown Monolayer MoSe2

Optical modulation on ultrashort time scales is both of central importance and an essential operation for applications in photonics and optoelectronics. Here, with a giant bandgap renormalization due to a high density of carrier injected by a femtosecond pulse, we realize an expected broadband saturable absorption in chemical vapor deposition grown monolayer transition-metal dichalcogenide MoSe₂. Our findings reveal the band edge shift from ∼1.53 to ∼0.52 eV under the pump excitation of 0.80 eV, which is induced by the nonequilibrium occupation of electron-hole states after a Mott transition as well as the increase of carrier temperature.

Charge Transfer Properties of Heterostructures Formed by Bi2 O2 Se and Transition Metal Dichalcogenide Monolayers

Atomically thin bismuth oxyselenide (Bi₂ O₂ Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge-carrier mobility and good air stability. Recently, the development of Bi₂ O₂ Se-based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi₂ O₂ Se-based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi₂ O₂ Se and representative transition metal dichalcogenides (namely, WS₂ /Bi₂ O₂ Se and MoS₂ /Bi₂ O₂ Se) is reported. Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type-II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time-resolved and layer-selective pump-probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long-lived interlayer excitons. These results establish the feasibility of integrating 2D Bi₂ O₂ Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.

Efficient 4.95 µm-8.5 µm dual-band grating coupler with crosstalk suppression capability

In many integrated optics systems, grating couplers are a key component of interfacing the external light source with in-plane photonic devices. Grating couplers with dual-band capability are often desired for expanding the operation spectrum of photonic systems. Here, we propose and theoretically investigate, for the first time, a 4.95 µm-8.5 µm dual-band grating coupler on a Ge-on-SOI platform. In addition to conventional structures, Bragg gratings are introduced to two wavelength division directions for crosstalk suppression. With this design, the simulated coupling efficiencies have respectively reached 59.93% and 46.38% for the 4.95 µm and 8.5 µm bands. This mid-infrared dual-band grating coupler may be useful for defense and environmental monitoring applications.

Multielement 2D layered material photodetectors

The pronounced quantum confinement effects, outstanding mechanical strength, strong light-matter interactions and reasonably high electric transport properties under atomically thin limit have conjointly established 2D layered materials (2DLMs) as compelling building blocks towards the next generation optoelectronic devices. By virtue of the diverse compositions and crystal structures which bring about abundant physical properties, multielement 2DLMs (ME2DLMs) have become a bran-new research focus of tremendous scientific enthusiasm. Herein, for the first time, this review provides a comprehensive overview on the latest evolution of ME2DLM photodetectors. The crystal structures, synthesis, and physical properties of various experimentally realized ME2DLMs as well as the development in metal-semiconductor-metal photodetectors are comprehensively summarized by dividing them into narrow-bandgap ME2DLMs (including Bi₂O₂X (X = S, Se, Te), EuMTe₃(M = Bi, Sb), Nb₂XTe₄(X = Si, Ge), Ta₂NiX₅(X = S, Se), M₂PdX₆(M = Ta, Nb; X = S, Se), PbSnS₂), moderate-bandgap ME2DLMs (including CuIn₇Se₁₁, CuTaS₃, GaGeTe, TlMX₂(M = Ga, In; X = S, Se)), wide-bandgap ME2DLMs (including BiOX (X = F, Cl, Br, I), MPX₃(M = Fe, Ni, Mn, Cd, Zn; X = S, Se), ABP₂X₆(A = Cu, Ag; B = In, Bi; X = S, Se), Ga₂In₄S₉), as well as topological ME2DLMs (MIrTe₄(M = Ta, Nb)). In the last section, the ongoing challenges standing in the way of further development are underscored and the potential strategies settling them are proposed, which is aimed at navigating the future advancement of this fascinating domain.

Crystalline Porous Materials for Nonlinear Optics

Crystalline porous materials have been extensively explored for wide applications in many fields including nonlinear optics (NLO) for frequency doubling, two-photon absorption/emission, optical limiting effect, photoelectric conversion, and biological imaging. The structural diversity and flexibility of the crystalline porous materials such as the metal-organic frameworks, covalent organic frameworks, and polyoxometalates provide numerous opportunities to orderly organize the dipolar chromophores and to systemically modify the type and concentration of these dipolar chromophores in the confined spaces, which are highly desirable for NLO. Here, the recent advances in the crystalline porous NLO materials are discussed. The second-order NLO of crystalline porous materials have been mainly devoted to the chiral and achiral structures, while the third-order NLO crystalline porous materials have been categorized into pure organic and hybrid organic/inorganic materials. Some representative properties and applications of these crystalline porous materials in the NLO regime are highlighted. The future perspective of challenges as well as the potential research directions of crystalline porous materials have been also proposed.

Low-Temperature and High-Quality Growth of Bi2O2Se Layered Semiconductors via Cracking Metal-Organic Chemical Vapor Deposition

Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS₂). Among ternary metal-oxy-chalcogenides, especially Bi₂O₂Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi₂O₂Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi₂O₂Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal-organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi₂O₂Se. The resulting Bi₂O₂Se films at very low growth temperature (∼300 °C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi₂O₂Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm²/(V·s) and photoresponsivity of 45134 A/W.

Pushing Optical Switch into Deep Mid-Infrared Region: Band Theory, Characterization, and Performance of Topological Semimetal Antimonene

The existing pulsed laser technologies and devices are mainly in the infrared spectral region below 3 μm so far. However, longer-wavelength pulsed lasers operating in the deep mid-infrared region (3-20 μm) are desirable for atmosphere spectroscopy, remote sensing, laser lidar, and free-space optical communications. Currently, the lack of reliable optical switches is the main limitation for developing pulsed lasers in the deep mid-infrared region. Here, we demonstrate that topological semimetal antimonene possesses an ultrabroadband optical switch characteristic covering from 2 μm to beyond 10 μm. Especially, the topological semimetal antimonene shows a very low saturable energy fluence (only 3-15 nJ cm^-2 beyond 3 μm) and an ultrafast recovery time of ps level. We also demonstrate stable Q-switching in fiber lasers at 2 and 3.5 μm by using topological semimetal antimonene as passive optical switches. Combined with the high environmental stability and easy fabrication, topological semimetal antimonene offers a promising optical switch that extends pulsed lasers into deep mid-infrared region.

Inclined Ultrathin Bi2O2Se Films: A Building Block for Functional van der Waals Heterostructures

As an emerging ultrathin semiconductor material, Bi₂O₂Se exhibits prominent performances in electronics, optoelectronics, ultrafast optics, etc. However, until now, the in-plane growth of Bi₂O₂Se thin films is mostly fulfilled on atomically flat mica substrates with interfacial electrostatic forces setting obstacles for Bi₂O₂Se transfer to fabricate functional van der Waals heterostructures. In this work, controlled growth of inclined Bi₂O₂Se ultrathin films is realized with apparently reduced interfacial contact areas upon mica flakes. Consequently, the transfer of Bi₂O₂Se could be facile by overcoming weaker electrostatic interactions. From cross-sectional characterizations at the Bi₂O₂Se/mica interfaces, it is found that there are no oxide buffer layers in existence for both in-plane and inclined growths, while the un-neutralized charge density is apparently decreased for inclined films. By mechanical pressing, inclined Bi₂O₂Se could be transferred onto SiO₂/Si substrates, and back-gated Bi₂O₂Se field effect transistors are fabricated, outperforming previously reported in-plane Bi₂O₂Se devices transferred with the assistance of corrosive acids and adhesive polymers. Furthermore, Bi₂O₂Se/graphene heterostructures are fulfilled by a probe tip to fabricate hybrid phototransistors with pristine interfaces, exhibiting highly efficient photoresponses. The results in this work demonstrate the potential of inclined Bi₂O₂Se to act as a building block for prospective van der Waals heterostructures.

Realizing Saturable Absorption and Reverse Saturable Absorption in a PEDOT:PSS Film via Electrical Modulation

Electrical tuning of the nonlinear absorption of materials has promising application potential, while studies remain rare. In this work, we show that the third-order nonlinear absorption of poly(3,4-ethylenedioxythiophene) chemically doped with poly(styrene sulfonic acid) [PEDOT:PSS] can be effectively modulated by external voltage. The nonlinear absorption of the film can be varied between reverse saturable absorption (RSA) and saturable absorption (SA) via voltage control with laser excitation at 800 nm, and the corresponding nonlinear absorption coefficient can be tuned in the range -1606 ± 73 to 521 ± 9 cm GW^-1. The doping level and energy structure of PEDOT are modulated with different voltages. The undoped film affords two-photon absorption and accordingly the RSA response. A moderately doped sample has two polaron levels, and Pauli blocking associated with these two polaron levels results in SA. The bipolaron level in heavily doped PEDOT leads to excited-state absorption and therefore RSA behavior. The approach reported here can be applied to other semiconductors and is a convenient, effective, and promising method for the electrical tuning of the optical nonlinearity.

Paradoxical combination of saturable absorption and reverse-saturable absorption in plasmon semiconductor nanocrystals

In heavily doped semiconductor nanocrystal systems, high-order nonlinearities including third-order nonlinearity and fifth-order nonlinearity can be tailored to manipulate light on the nanoscale due to the semiconductor intrinsic absorption and localized surface plasmon resonances. Here, by exploiting the nonlinear optical properties of broadly infrared plasmons in solution-processed aluminum-doped ZnO nanocrystals (AZO NCs) with a wide band-gap, we demonstrate that the competition between plasma ground-state bleaching (third-order nonlinearity) and three-photon absorption (fifth-order nonlinearity) is responsible for the transition between saturable absorption and reverse saturable absorption. Upon increasing the pump intensity, the third-order nonlinear coefficient decreases from -5.85 × 10² cm GW^-1 to -7.89 × 10^-10 cm GW^-1, while the fifth-order nonlinear coefficient increases from 3.08 × 10^-9 cm³ GW^-2 to 15.8 cm³ GW^-2. With aluminum-doped ZnO nanocrystals as a Q-switch, a pulsed fiber laser operating at the C band (optical communication band) was constructed. Furthermore, the relatively small temperature fluctuations (7.13 K) of the Q-switch indicate its application prospects in all-optical systems. Investigations on the intrinsic mechanism between high-order nonlinearity and the nonlinear absorption can promote the further development and applications of heavily doped oxide semiconductors in advanced nanophotonics.

Magnitude and Spatial Distribution Control of the Supercurrent in Bi2O2Se-Based Josephson Junction

Many proposals for exploring topological quantum computation are based on superconducting quantum devices constructed on materials with strong spin-orbit coupling (SOC). For these devices, full control of both the magnitude and the spatial distribution of the supercurrent is highly demanded, but has been elusive up to now. We constructed a proximity-type Josephson junction on nanoplates of Bi₂O₂Se, a new emerging semiconductor with strong SOC. Through electrical gating, we show that the supercurrent can be fully turned ON and OFF, and its real-space pathways can be configured either through the bulk or along the edges. Our work demonstrates Bi₂O₂Se as a promising platform for constructing multifunctional hybrid superconducting devices as well as for searching for topological superconductivity.

Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms

The near-infrared (NIR) photoelectric properties of multilayer Bi₂O₂Se nanofilms were systematically studied in this paper. Multilayer Bi₂O₂Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 10¹⁰ Jones). These results show that the device based on multilayer Bi₂O₂Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.

Ultrafast and large optical nonlinearity of a TiSe2 saturable absorber in the 2 μm wavelength region

The non-equilibrium state of correlated electron materials is crucial for both scientific research and practical applications in optoelectronic and photonic devices. Because of the weak optical nonlinearity of most materials even under a dense optical excitation, it is desirable to achieve a significant nonlinear optical response with ultrafast and large optical nonlinearity utilizing a common material. Here, an ultrafast response and large optical nonlinearity induced by non-equilibrium electrons in typical transition metal dichalcogenides, TiSe2, are investigated in the 1.55-2.0 μm wavelength region. Significantly, we observe an ultrafast transient dynamics of 491 femtoseconds as well as a large optical nonlinearity with a saturable coefficient of -0.17 cm GW-1 (1.55 μm) and -0.10 cm GW-1 (2.0 μm). Upon increasing pump fluence, TiSe2 exhibits an enhanced bleaching response amplitude up to 563%. Furthermore, a stable Q-switched fiber laser in the 2.0 μm wavelength region is achieved by employing the TiSe2-saturable absorber. The findings offer the potential design to enhance the optical nonlinearity via non-equilibrium electrons for advanced photonic devices.

Quasi-Two-Dimensional Se-Terminated Bismuth Oxychalcogenide (Bi2O2Se)

Since the discovery of graphene, van der Waals (vdW) two-dimensional (2D) materials have attracted considerable attention for various potential applications. Recently, a Se-terminated bismuth oxychalcogenide, Bi₂O₂Se, has been fabricated using the vapor deposition method. Bi₂O₂Se is not a vdW 2D material, but the as-grown substance shows 2D characteristics. For example, Bi₂O₂Se exhibits layer number-dependent absorption spectra in experiments, but until now, there has been no reasonable explanation as to why. Here, we propose a 50% Se-passivation surface model, which elucidates the production of such spectra. Our model is also consistent with recent observations using scanning tunneling microscopy. Moreover, high-resolution transmission electron microcopy observations show a broken zipper-like structure in Bi₂O₂Se. We ascribe Bi₂O₂Se as a zipper 2D material, and we summarize the characteristics of zipper 2D materials while proposing the development of others. Zipper 2D materials not only are an important subset of 2D materials but also bridge the gap between vdW 2D materials and traditional 3D materials. Because they are a big family, including insulators, semiconductors, and magnetic metals, zipper 2D materials lend themselves to a plethora of applications.

Heavily Doped Semiconductor Colloidal Nanocrystals as Ultra-Broadband Switches for Near-Infrared and Mid-Infrared Pulse Lasers

Heavily self-doped semiconductors can be designed to be used in advanced photonics due to both fabrication and functional advantages. Ultrafast response, strong optical nonlinearity, broadband wavelength range, and accessibility of integration are major challenges for ultrafast all-optical photonics to operate in the infrared wavelength range. Here, solution-processed Cu_1.8Se semiconductor nanocrystals (NCs) demonstrate an ultrafast response (about 360-520 fs), strong optical nonlinearity (as large as -1.4 × 10³ cm GW^-1), and broadband (from 800 to 3000 nm) nonlinear optical absorption in the near-infrared and mid-infrared wavelength ranges. The ultrafast response and larger optical nonlinearity may be triggered by the plasma ground-state bleaching in the strong surface electromagnetic filed. Stable Q-switched lasers in Er-doped fiber laser, Tm-doped fiber laser, and Ho/Pr-codoped ZBLAN fiber laser are operated, respectively. These findings indicate that Cu_1.8Se NCs are prospective nonlinear materials for ultrafast response and broadband pulse laser.

Bolometric Effect in Bi2 O2 Se Photodetectors

Bi₂ O₂ Se is emerging as a photosensitive functional material for optoelectronics, and its photodetection mechanism is mostly considered to be a photoconductive regime in previous reports. Here, the bolometric effect is discovered in Bi₂ O₂ Se photodetectors. The coexistence of photoconductive effect and bolometric effect is generally observed in multiwavelength photoresponse measurements and then confirmed with microscale local heating experiments. The unique photoresponse of Bi₂ O₂ Se photodetectors may arise from a change of hot electrons during temperature rises instead of photoexcited holes and electrons. Direct proof of the bolometric effect is achieved by real-time temperature tracking of Bi₂ O₂ Se photodetectors under time evolution after light excitation. Moreover, the Bi₂ O₂ Se bolometer shows a high temperature coefficient of resistance (-1.6% K^-1 ), high bolometric coefficient (-31 nA K^-1 ), and high bolometric responsivity (>320 A W^-1 ). These findings offer a new approach to develop bolometric photodetectors based on Bi₂ O₂ Se layered materials.

SnSe2 Nanosheets for Subpicosecond Harmonic Mode-Locked Pulse Generation

Tin diselenide (SnSe₂ ) nanosheets as novel 2D layered materials have excellent optical properties with many promising application prospects, such as photoelectric detectors, nonlinear optics, infrared photoelectric devices, and ultrafast photonics. Among them, ultrafast photonics has attracted much attention due to its enormous advantages; for instance, extremely fast pulse, strong peak power, and narrow bandwidth. In this work, SnSe₂ nanosheets are fabricated by using solvothermal treatment, and the characteristics of SnSe₂ are systemically investigated. In addition, the solution of SnSe₂ nanosheets is successfully prepared as a fiber-based saturable absorber by utilizing the evanescent field effect, which can bear a high pump power. 31st-order subpicosecond harmonic mode locking is generated in an Er-doped fiber laser, corresponding to the maximum repetition rate of 257.3 MHz and pulse duration of 887 fs. The results show that SnSe₂ can be used as an excellent nonlinear photonic device in many fields, such as frequency comb, lasers, photodetectors, etc.

Ultrathin Free-Standing Nanosheets of Bi2O2Se: Room Temperature Ferroelectricity in Self-Assembled Charged Layered Heterostructure

Ultrathin ferroelectric semiconductors with high charge carrier mobility are much coveted systems for the advancement of various electronic and optoelectronic devices. However, in traditional oxide ferroelectric insulators, the ferroelectric transition temperature decreases drastically with decreasing material thickness and ceases to exist below certain critical thickness owing to depolarizing fields. Herein, we show the emergence of an ordered ferroelectric ground state in ultrathin (∼2 nm) single crystalline nanosheets of Bi₂O₂Se at room temperature. Free-standing ferroelectric nanosheets, in which oppositely charged alternating layers are self-assembled together by electrostatic interactions, are synthesized by a simple, rapid, and scalable wet chemical procedure at room temperature. The existence of ferroelectricity in Bi₂O₂Se nanosheets is confirmed by dielectric measurements and piezoresponse force spectroscopy. The spontaneous orthorhombic distortion in the ultrathin nanosheets breaks the local inversion symmetry, thereby resulting in ferroelectricity. The local structural distortion and the formation of spontaneous dipole moment were directly probed by atomic resolution scanning transmission electron microscopy and density functional theory calculations.

Ultrafast and broadband optical nonlinearity in aluminum doped zinc oxide colloidal nanocrystals

Heavily doped oxide semiconductors can be tailored for widespread application in near-infrared (NIR) and mid-infrared (mid-IR) wavelength ranges because of both functional and fabrication advantages. Here, the ultrafast and broadband nonlinear saturable absorption of Al-doped zinc oxide nanocrystals (AZO NCs) is investigated by using the Z-scan technique and the pump-probe technique. The nonlinear absorption coefficient is as high as -1.90 × 10³ cm GW^-1 in the wide infrared (IR) wavelength range (from 800 to 3000 nm). Furthermore, a maximum optically induced refractive index of -1.85 × 10^-1 cm² GW^-1 in the dielectric region and 2.09 × 10^-1 cm² GW^-1 in the metallic region leads to an ultrafast nonlinear optical response (less than 350 femtoseconds). Mode-locked fiber lasers at 1064 nm and 1550 nm as well as Q-switched fiber lasers near 2000 nm and 3000 nm prove the use of employing AZO NCs as a broadband and ultrafast nonlinear optical device, which provides a valuable strategy and intuition for the development of nanomaterial-based photonic and optoelectronic devices in the NIR and mid-IR wavelength ranges.

Picosecond Time Resolution with Avalanche Amorphous Selenium

Ultrafast photodetection has traditionally been performed with crystalline photodetectors, which tend to suffer from low production yield, suboptimal detection efficiency, and operational limitations that restrict their potential applications. Amorphous selenium is a unique, disordered photosensing material in which carrier transport can be shifted entirely from localized to extended states where holes get hot, resulting in deterministic, non-Markovian impact ionization avalanche, causing selenium to exhibit characteristics similar to crystalline photoconductors. For the first time, we have fabricated a multiwell selenium detector using nanopillars that achieves both avalanche gain and unipolar time-differential charge sensing. We experimentally show how these features together improve selenium's temporal performance by nearly 4 orders of magnitude, allowing us to achieve picosecond timing jitter suitable for a variety of ultrafast applications. Such a detector would be a viable low-cost, high production yield alternative for picosecond photodetection and imaging.

Highly tunable nonlinear response of Au@WS2 hybrids with plasmon resonance and anti-Stokes effect

We synthesize Au@WS2 hybrid nanobelts and investigate their third-order nonlinear responses mediated by a strong anti-Stokes effect. By using the femtosecond Z-scan technique and tuning the excitation photon energy (Eexc), we find the sign reversals of both nonlinear absorption coefficient β and nonlinear refractive index γ to be around 1.60 eV, which is prominently higher than the bandgap (1.35 eV) of WS2 bulk owing to the strong anti-Stokes processes around the bandgap of the indirect semiconductors. The saturable absorption and self-defocusing of the WS2 nanobelts are significantly enhanced by the plasmon resonance of the Au nanoparticles when Eexc > 1.60 eV. But the excited state absorption assisted by the anti-Stokes processes and the self-focusing observed at Eexc < 1.60 eV are suppressed by the surface plasmon. Furthermore, by using population rate equations, we theoretically analyze the sign reversals of both β and γ and reveal the physical mechanism of the unique nonlinear responses of the hybrids with the plasmon resonance and anti-Stokes effect. These observations enrich the understanding of the nonlinear processes and interactions between the plasmon and exciton and are helpful for developing nonlinear optical nanodevices.

8.8 GHz Q-switched mode-locked waveguide lasers modulated by PtSe2 saturable absorber

We demonstrate high-repetition-rate fundamentally Q-switched mode-locked Nd:YAG waveguide laser modulated by platinum diselenide (PtSe₂) saturable absorber. The laser operation platform is a femtosecond laser-written monolithic Nd:YAG waveguide, and the saturable absorber is large-area few-layer PtSe₂ that possesses relatively lower saturation intensity and higher modulation depth in comparison with graphene. With the superb ultrafast nonlinear saturable absorption properties of as-synthesized PtSe₂, the waveguide laser could operate at ~8.8 GHz repetition rate and ~27 ps pulse duration, while maintaining a relatively high slope efficiency of 26% and high stability with signal-to-noise ratio (SNR) up to 54 dB. Our work indicates the promising applications of laser-written Nd:YAG waveguides and atomically thin PtSe₂ for on-chip integration of GHz laser sources toward higher repetition rates and shorter pulse duration.

Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors

Emerging two-dimensional (2D) semiconducting materials serve as promising alternatives for next-generation digital electronics and optoelectronics. However, large-scale 2D semiconductor films synthesized so far are typically polycrystalline with defective grain boundaries that could degrade their performance. Here, for the first time, wafer-size growth of a single-crystal Bi₂O₂Se film, which is a novel air-stable 2D semiconductor with high mobility, was achieved on insulating perovskite oxide substrates [SrTiO₃, LaAlO₃, (La, Sr)(Al, Ta)O₃]. The layered Bi₂O₂Se epilayer exhibits perfect lattice matching and strong interaction with perovskite oxide substrates, which enable unidirectional alignment and seamless mergence of multiple seeds into single-crystal continuous films free of detrimental grain boundaries. The single-crystal Bi₂O₂Se thin films show excellent spatial homogeneity over the entire wafer and allow for the batch fabrication of high-performance field-effect devices with high mobilities of ∼150 cm² V^-1 s^-1 at room temperature, excellent switching behavior with large on/off ratio of >10⁵, and high drive current of ∼45 μA μm^-1 at a channel length of ∼5 μm. Our work makes a step toward the practical applications of high-mobility semiconducting 2D layered materials and provides an alternative platform of oxide heterostructure to investigate novel physical phenomena.

Tailoring optical nonlinearities of LiNbO3 crystals by plasmonic silver nanoparticles for broadband saturable absorbers

We report on the synthesis of plasmonic Ag nanoparticles (NPs) embedded in a LiNbO₃ crystal (AgNP:LN) by ion implantation and its application as an efficient broadband saturable absorber (SA) to realize Q-switched pulsed laser generation at both visible and near-infrared wavelength bands. The nonlinear optical response of AgNP:LN is considered as a synergistic effect between Ag NPs and LiNbO₃. We apply the AgNP:LN as visible-near-infrared broadband saturable absorbers (SAs) into Pr:LuLiF₄ bulk and Nd:YVO₄ waveguide laser cavity, achieving efficient passively Q-switched laser at 639 nm and 1064 nm, respectively. This work paves a new way to tailor the nonlinear optical response of LiNbO₃ crystals by using plasmonic Ag NPs, manifesting the significant potential as broadband SAs in the aspect of pulsed lasing.